Preheat ring and processing chamber including black quartz, and related methods

Abstract

Embodiments of the present disclosure generally relate to a preheat ring for use in a substrate processing chamber, and related methods. A preheat ring comprising (e.g., formed of) black quartz promotes material properties that can promote heating benefits. In one or more embodiments, a preheat ring suitable for use in a semiconductor processing chamber includes one or more ring segments. The one or more ring segments include an inner edge defining an inner dimension, an outer edge defining an outer dimension, a first plane between the inner and outer edges, and a second plane between the inner and outer edges. The second plane is opposite the first plane. The one or more ring segments include black quartz. The black quartz includes silicon dioxide (SiO2) impregnated with undoped silicon (Si).

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to preheat rings for use in substrate processing chambers and related methods. [Background technology]

[0002]

[0002] The continued miniaturization of semiconductor devices relies on more precise control of the flow rate and temperature of process gases supplied to semiconductor processing chambers, for example. Typically, in a cross-flow chamber, process gases are supplied to the chamber and directed across the surface of the substrate being processed. The temperature of the process gas can be influenced, for example, by a preheat ring.

[0003]

[0003] Preheat rings have limitations with respect to heating and processing. For example, a preheat ring that can heat up quickly can also cool down quickly between processing cycles, potentially resulting in poor heating efficiency and increased power consumption. As another example, more significant temperature differences during power cycling can increase fatigue in the preheat ring, potentially leading to preheat ring failure (e.g., cracking).

[0004]

[0004] Therefore, there is a need for an improved preheat ring. Summary of the Invention

[0005]

[0005] Embodiments of the present disclosure generally relate to a preheat ring for use in a substrate processing chamber, and related methods.

[0006] In one or more embodiments, a preheat ring suitable for use in a semiconductor processing chamber includes one or more ring segments. The one or more ring segments include an inner edge defining an inner dimension, an outer edge defining an outer dimension, a first side surface between the inner and outer edges, and a second side surface between the inner and outer edges. The second side surface is opposite the first side surface. The one or more ring segments include black quartz. The black quartz includes silicon dioxide (SiO2) impregnated with undoped silicon (Si).

[0007] In one or more embodiments, a processing chamber suitable for use in semiconductor manufacturing includes a chamber body and a window, where the chamber body and the window at least partially define a processing space. The processing chamber includes a plurality of heat sources configured to heat the processing space, a substrate support disposed within the processing space, a liner configured to at least partially line the chamber body, and a preheat ring disposed within the processing chamber and at least partially supported by the liner. The preheat ring includes one or more ring segments comprising black quartz. The black quartz comprises silicon dioxide (SiO2) impregnated with undoped silicon (Si).

[0008] In one or more embodiments, a method for processing a substrate suitable for use in semiconductor processing includes heating a substrate disposed on a surface of a preheat ring and a substrate support within a processing volume of a chamber. The preheat ring is disposed outside the substrate and includes black quartz. The black quartz includes silicon dioxide (SiO2) impregnated with undoped silicon (Si). The method further includes flowing one or more process gases over the surface of the preheat ring to heat the one or more process gases, flowing the one or more process gases over the substrate to form one or more layers on the substrate, and exhausting the one or more process gases.

[0009]

[0009] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a partial schematic cross-sectional side view of a processing chamber including a process kit according to one or more embodiments. [Figure 2]

[0011] FIG. 2 is a schematic axonometric view of the preheat ring shown in FIG. 1 in accordance with one or more embodiments. [Figure 3]

[0012] FIG. 2 is a schematic top view of the preheat ring shown in FIG. 1 according to one or more embodiments. [Figure 4]

[0013] FIG. 1 is a schematic axonometric view of a preheat ring, according to one or more embodiments. [Figure 5]

[0014] FIG. 5 is a schematic top view of the preheat ring shown in FIG. 4 according to one or more embodiments. [Figure 6]

[0015] FIG. 1 is a schematic axonometric view of a preheat ring, according to one or more embodiments. [Figure 7]

[0016] FIG. 7 is a schematic top view of the preheat ring shown in FIG. 6 according to one or more embodiments. [Figure 8A]

[0017] FIG. 8 is a schematic cross-sectional side view of a preheat ring taken along section 8-8 shown in FIG. 2, according to one or more embodiments. [Figure 8B]

[0018] FIG. 1 is a schematic cross-sectional side view of a preheat ring according to one or more embodiments. [Figure 9]

[0019] FIG. 1 is a schematic cross-sectional side view of a preheat ring according to one or more embodiments. [Figure 10A]

[0020] FIG. 1 is a schematic cross-sectional side view of a preheat ring according to one or more embodiments. [Figure 10B]

[0021] FIG. 1 is a schematic cross-sectional side view of a preheat ring according to one or more embodiments. [Figure 11]

[0022] FIG. 1 is a schematic cross-sectional side view of a preheat ring according to one or more embodiments. [Figure 12]

[0023] 1 is a schematic flow diagram of a method for processing a substrate, according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0024] For ease of understanding, where possible, identical reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0012]

[0025] The present disclosure generally relates to a chamber, method, apparatus, and related components for using a preheat ring in a substrate processing chamber. The preheat ring comprises black quartz. A preheat ring comprising (e.g., formed of) black quartz promotes material properties that can promote heating benefits.

[0013]

[0026] 1 is a partial schematic cross-sectional side view of a processing chamber 100 including a process kit 111, according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 creates a cross-flow of precursors across a top surface 150 of the substrate 102.

[0014]

[0027] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form at least a portion of the chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper lamps 141, and a plurality of lower lamps 143. As shown, a controller 120 is in communication with the processing chamber 100 and is used to control processes and methods (e.g., steps of the methods described herein).

[0015]

[0028] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. A plurality of upper lamps 141 are disposed between the upper window and the lid 154. The plurality of upper lamps 141 form part of an upper lamp module 155. The lid 154 may include a plurality of sensors (not shown) disposed therein to measure the temperature within the process chamber 100. A plurality of lower lamps 143 are disposed between the lower window 110 and the floor 152. The plurality of lower lamps 143 form part of the lower lamp module 145. The upper window 108 and the lower window 110 are formed of an energy-transmitting material, such as quartz.

[0016]

[0029] The processing space 136 and the purge space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purge space 138 are part of an interior space defined at least in part by the upper window 108, the lower window 110, the upper liner 122, and the one or more lower liners 109, 113. In one or more embodiments, the one or more lower liners 109, 113 include an outer liner 109 and an inner liner 113.

[0017]

[0030] The interior space has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the process space 136.

[0018]

[0031] Lift pin holes 107 may be disposed within the substrate support 106. The lift pin holes 107 are sized to accommodate lift pins 132 for raising and lowering the substrate 102 relative to the substrate support 106 before or after a deposition process. The lift pins 132 may rest on lift pin stops 134 as the substrate support 106 lowers from the process position to the transfer position. The lift pin stops 134 may be coupled to the second shaft 104 through multiple arms.

[0019]

[0032] The flow module 112 includes multiple gas inlets 114, multiple purge gas inlets 164, and one or more gas exhaust ports 116. In one or more embodiments, the multiple gas inlets 114 and the multiple purge gas inlets 164 are located on an opposite side of the flow module 112 from the one or more gas exhaust ports 116. An upper liner 122 and a lower liners 109, 113 are located on the interior surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning processes. The one or more gas inlets 114 and the one or more purge gas inlets 164 are each positioned to flow gas parallel to an upper surface 150 of a substrate 102 disposed within the processing space 136. The one or more gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The one or more purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. The one or more gas exhaust ports 116 are fluidly connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), hydrogen (H), and / or nitrogen (N). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH), and the one or more cleaning gases include hydrochloric acid (HCl).

[0020]

[0033] The one or more gas outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers on the substrate 102. In one or more embodiments, the exhaust system 178 is located on an opposite side of the processing chamber 100 from the one or more gas inlets 114 and / or the purge gas inlet 164.

[0021]

[0034] A preheat ring 200 is positioned outside the substrate support 106. The preheat ring 200 is supported on a ledge of the inner liner 113. In one or more embodiments, an outer lip 203 of the preheat ring 200 interfaces with an inner lip 204 of the inner liner 113. The preheat ring 200 is further described in FIGS. 2-11 . One or more gaps 251, 252 may be positioned between the lower liners 109, 113 and / or outside the outer liner 109. The gaps 251, 252 may be filled with a gas (such as air and / or one or more other gases). The gaps 251, 252 may function as a thermal barrier and / or may be controlled to regulate the temperature of the gaps 251, 252.

[0022]

[0035] 2 and 3. In one or more embodiments, preheat ring 200 is formed of black quartz. In one or more embodiments, liners 109, 113, and / or 122 are formed of one or more of quartz (e.g., transparent quartz (such as clear quartz), opaque quartz (such as white quartz or gray quartz), and / or black quartz as described with respect to preheat ring 200), silicon carbide (SiC), and / or graphite coated with SiC. In one or more embodiments, inner liner 113 includes black quartz as described with respect to preheat ring 200, and outer liner 109 includes opaque quartz.

[0023]

[0036] In the embodiment shown in Figure 1, the inner liner 113 and the preheat ring 200 are separate bodies. In one or more embodiments, the preheat ring 200 and the inner liner 113 are integrally formed as a monolithic body made of black quartz. In the embodiment shown in Figure 1, the inner liner 113 and the outer liner 109 are separate bodies. In one or more embodiments, the outer liner 109 and the inner liner 113 are integrally formed as a monolithic body.

[0024]

[0037] While the lamps 141, 143 heat the preheat ring 200 and the substrate 102, one or more process gases P1 flow into the processing space 136 through one or more gas inlets 114 to form (e.g., epitaxially grow) one or more layers on the substrate 102. After flowing over the substrate 102, the one or more process gases P1 exit the interior space through one or more gas exhaust ports 116. The flow module 112 may be at least a portion of a sidewall of the processing chamber 100. The present disclosure also contemplates that one or more purge gases may be supplied to and exhausted from the purge space 138 (through multiple purge gas inlets 164) during the deposition process.

[0025]

[0038] FIG. 2 is a schematic axonometric view of the preheat ring 200 shown in FIG. 1, according to one or more embodiments.

[0026]

[0039] FIG. 3 is a schematic top view of the preheat ring 200 shown in FIG. 1, according to one or more embodiments.

[0027]

[0040] The preheat ring 200 includes one or more ring segments. In one or more embodiments (and as shown in FIGS. 2 and 3 ), the preheat ring 200 includes a complete ring having a full circle. The preheat ring 200 has an inner edge 210 defining an inner dimension ID1. The preheat ring 200 has an outer edge 220 defining an outer dimension OD1. In one or more embodiments, the inner dimension ID1 is the inner radius, and the outer dimension OD1 is the outer radius. In one or more embodiments, the outer dimension OD1 is the major dimension of the preheat ring 200, and the inner dimension ID1 is the minor dimension of the preheat ring 200. Between the inner edge 210 and the outer edge 220 is a first planar surface 205. Between the inner edge 210 and the outer edge 220 is a second planar surface 215. In one or more embodiments, the first plane 205 is part of a flat surface of the preheat ring 200 and the second plane 215 is part of an L-shaped surface of the preheat ring 200 .

[0028]

[0041] The distance D1 is between the inner dimension and the outer dimension. The distance D1 is 40 mm or less. In one or more embodiments, the distance D1 is in the range of 20 mm to 40 mm, e.g., 30 mm to 35 mm, 33 mm, etc. The distance D1 is a ratio of the distance to the inner dimension ID1. The distance ratio is 0.25 or less. In one or more embodiments, the distance ratio is in the range of 0.15 to 0.25 (e.g., in the range of 0.17 to 0.19). In one or more embodiments, the distance ratio is about 0.18.

[0029]

[0042] As described above, the preheat ring 200 comprises black quartz. Black quartz comprises silicon dioxide (SiO2) impregnated with undoped silicon (Si). The silicon dioxide used to manufacture the black quartz is naturally occurring and crystalline. As shown in FIG. 2 using black surface shading, the surface of the preheat ring 200 comprising black quartz has a black appearance at room temperature. During heating of the preheat ring 200, the appearance may change to another solid color (e.g., orange). The solid black color is present but not shown in other figures (e.g., FIGS. 1 and 3-11) for the purpose of visual clarity.

[0030]

[0043] The black quartz has a composition including a weight percentage of undoped silicon (e.g., a weight percentage of undoped silicon) greater than 0.0% and less than or equal to 5.0%. In one or more embodiments, the weight percentage of undoped silicon is in the range of 2.4% to 2.6%. In one or more embodiments, the weight percentage of undoped silicon is about 2.5%.

[0031]

[0044] The weight percentage of silicon dioxide in the composition of the black quartz (e.g., weight percentage of silicon dioxide) is 94.0% or greater. In one or more embodiments, the weight percentage of silicon dioxide is in the range of 96.4% to 97.6%. The sum of the weight percentage of undoped silicon and the weight percentage of silicon dioxide is 99.0% or greater, and the weight percentage of impurities (e.g., carbon and / or one or more metals) is 1.0% or less. Thus, the black quartz is substantially free of carbon and other impurities. In one or more embodiments, the sum of the weight percentage of undoped silicon and the weight percentage of silicon dioxide in the undoped silicon is 99.9% or greater. In one or more embodiments, the sum of the weight percentage of undoped silicon and the weight percentage of silicon dioxide in the undoped silicon is 99.995% or greater. Therefore, the impurity content of black quartz is less than 1%.

[0032]

[0045] Black quartz has thermal properties that facilitate rapid and efficient heating of the preheat ring 200. The black quartz of one or more ring segments has an emissivity of 0.75 or greater at 1000°C. In one or more embodiments, the emissivity of the black quartz is in the range of 0.8-0.9 at 1000°C. The black quartz has a thermal conductivity of less than 10.0 W / m·K. In one or more embodiments, the thermal conductivity of the black quartz is less than 5.0 W / m·K, for example, less than 3.0 W / m·K. In one or more embodiments, the thermal conductivity of the black quartz is about 1.5.

[0033]

[0046] Figure 4 is a schematic axonometric view of a preheat ring 400 according to one or more embodiments. In the embodiment shown in Figure 4, the preheat ring 400 has the cross-section shown in Figure 8A. Other cross-sections for the preheat ring 400 can be used, such as those described herein, e.g., those shown in Figures 8B-11.

[0034]

[0047] FIG. 5 is a schematic top view of the preheat ring 400 shown in FIG. 4, according to one or more embodiments.

[0035]

[0048] Preheat ring 400 is similar to preheat ring 200 shown in Figure 2 and includes one or more of its aspects, features, components, properties, and / or operations. Preheat ring 400 can be used in place of preheat ring 200 of Figure 1. Preheat ring 400 is a C-shaped ring that includes one ring segment in a "C" shape and has a gap 401.

[0036]

[0049] FIG. 6 is a schematic axonometric view of a preheat ring 600 according to one or more embodiments.

[0037]

[0050] In the embodiment shown in Figure 6, the preheat ring 600 has the cross-section shown in Figure 8A. Other cross-sections for the preheat ring 600 can be used, including other cross-sections described herein, such as those shown in Figures 8B-11.

[0038]

[0051] FIG. 7 is a schematic top view of the preheat ring 600 shown in FIG. 6, according to one or more embodiments.

[0039]

[0052] The notched preheat ring 600 is similar to the preheat ring 200 shown in Figure 2 and includes one or more of its aspects, features, components, properties, and / or operations. The preheat ring 600 can be used in place of the preheat ring 200 of Figure 1. The preheat ring 600 includes one ring segment having a notch that defines a gap 601.

[0040]

[0053] 8A is a schematic cross-sectional side view of preheat ring 200 taken along section 8-8 shown in FIG. 2, according to one or more embodiments. One or more ring segments of preheat ring 200 have an L-shaped cross section.

[0041]

[0054] The thickness T1 between the first flat surface 205 and the second flat surface 215 is 5.0 mm or less, e.g., 4.00 mm or less. The thickness T1 is 1.00 mm or more, e.g., 1.2 mm or more. In one or more embodiments, the thickness T1 is 3.0 mm or less, e.g., 2.0 mm or less. In one or more embodiments, the thickness T1 is in the range of 1.2 mm to 2.0 mm. In one or more embodiments, the thickness T1 is in the range of 1.2 mm to 3.0 mm, e.g., 2.0 mm to 3.0 mm. Other values ​​for the thickness T1 are also contemplated (e.g., 0.8 mm or more, 3.0 mm or more, etc.). In one or more embodiments, the thickness T1 is used across the entire cross section of the preheat ring 200. For example, the thickness T1 may be used between the edge 220 and the inner surface 221 of the outer lip 203 (as shown in FIG. 8A).

[0042]

[0055] The thickness T1 is the thickness ratio to the inner dimension ID1. The thickness ratio is equal to or less than 0.025. In one or more embodiments, the thickness ratio is equal to or less than 0.020, for example, in the range of 0.017 to 0.019. In one or more embodiments, the thickness ratio is about 0.018. In one or more embodiments, the thickness ratio is equal to or less than 0.015.

[0043]

[0056] The thickness T1 and the black quartz facilitate reducing the mass of the preheat ring 200 and blocking beneficial energy (e.g., infrared (IR)). For example, this facilitates rapid and efficient heating of the preheat ring 200 (e.g., heating of the first flat surface 205) and reducing heat loss between thermal processing cycles (e.g., reducing conduction from the first flat surface 205 to the preheat ring 200 and reducing conduction and convection to the space and components surrounding the preheat ring 200), while promoting thermal process uniformity. As another example, IR blocking is facilitated to reduce heat loss to the area below the preheat ring 200 and efficiently heat the process gases and substrates. Rapid and efficient heating and reduced heat loss facilitate reduced power consumption and reduced thermal non-uniformity. As another example, rapid heating of the first flat surface 205 and reduced heat loss facilitates burnout of dopants in the processing space 136 between processing cycles, thereby facilitating reduced contamination, reduced memory effects, and improved device performance.

[0044]

[0057] The outer edge 220 is higher than the inner edge 210 .

[0045]

[0058] FIG. 8B is a schematic cross-sectional side view of a preheat ring 800 according to one or more embodiments. Similar to the preheat ring 200 of FIG. 8A, one or more ring segments of the preheat ring 800 have an L-shaped cross section, but with a recess formed on the inner edge 810. The recess forms a stepped surface on the radially inner and lower edge of the preheat ring 800. The preheat ring 800 has a thickness T2 adjacent to the stepped surface, where the thickness T2 is 1.00 mm or greater, e.g., 1.2 mm or greater. In one or more embodiments, the thickness T2 is 3.0 mm or less, e.g., 2.0 mm or less. In one or more embodiments, the thickness T2 is within a range of 1.2 mm to 2.0 mm. In one or more embodiments, the thickness T2 is within a range of 1.2 mm to 3.0 mm, e.g., 2.0 mm to 3.0 mm. Other values ​​for the thickness T2 are also contemplated, such as 0.8 mm or greater, 3.0 mm or greater, etc. The thickness T2 is less than the thickness T1.

[0046]

[0059] Distance D2 defines the width of the recess that defines the step. Distance D2 is in the range of 0 mm to 40 mm. Distance D2 is less than distance D1. In one or more embodiments, distance D2 is in the range of 0 mm to a value equal to distance D1 minus thickness T1. The offset of inner edge 810 reduces the width of second plane 815. All other dimensions of preheat ring 800 are the same as preheat ring 200 shown in FIG. 8A.

[0047]

[0060] 9 is a schematic cross-sectional side view of a preheat ring 900 according to one or more embodiments. The cross section of the preheat ring 900 is rectangular. The preheat ring 900 is similar to the preheat ring 200 shown in FIG. 2, including one or more of its aspects, features, components, properties, and / or functions. The preheat ring 900 can be used in place of the preheat ring 200 of FIG. 1.

[0048]

[0061] The preheat ring 900 includes an inner edge 210, a first flat surface 205, an outer edge 920, and a second flat surface 915 that is a portion of the second flat surface. The inner edge 210 is approximately the same height as the outer edge 920. The first flat surface 205 is approximately the same length as the second flat surface 915. In FIG. 9, the apexes of the rectangular cross section are rounded. The present disclosure contemplates cases where one or more apexes are not rounded (e.g., angular, as shown in FIG. 8A).

[0049]

[0062] 10A is a schematic cross-sectional side view of a preheat ring 1000 according to one or more embodiments. The cross section of the preheat ring 1000 is U-shaped, and the preheat ring 1000 is oriented in an inverted "U" shape, with the "U" pointing downward. The preheat ring 1000 is similar to the preheat ring 200 shown in FIG. 2, including one or more of its aspects, features, components, properties, and / or functions. The preheat ring 1000 can be used in place of the preheat ring 200 of FIG. 1.

[0050]

[0063] The preheat ring 1000 includes a first flat surface 205, an inner edge 1010, an outer edge 1020, and a second flat surface 1015 between the inner edge 1010 and the outer edge 1020. The inner edge 1010 is approximately flush with the outer edge 1020. The second flat surface 1015 is part of a U-shaped surface and has a first portion and a second portion. In FIG. 9, the apex of the U-shaped cross section is rounded. The present disclosure contemplates cases where one or more apexes are not rounded (e.g., angular, as shown in FIG. 8A).

[0051]

[0064] FIG. 10B is a schematic cross-sectional side view of a preheat ring 1050 according to one or more embodiments. Similar to the preheat ring 1000 of FIG. 10A, the cross section of one or more ring segments of the preheat ring 1050 is "U" shaped with a recess in the right second plane 1065. Each arm of the "U" shape has the same thickness T1. The inner edge 1060 is shorter than the outer edge 1020 by a length L1. In one or more embodiments, the length L1 is between 0.0 mm and 12.0 mm, e.g., approximately 3.0 mm. The right second plane 1065 is parallel to, but not coplanar with, the left second plane 1015.

[0052]

[0065] 11 is a schematic cross-sectional side view of a preheat ring 1100 in accordance with one or more embodiments. The cross section of the preheat ring 1100 is T-shaped, and the preheat ring 1100 is positioned in an upright orientation. The preheat ring 1100 is similar to the preheat ring 200 shown in FIG. 2, including one or more of its aspects, features, components, characteristics, and / or operation. The preheat ring 1000 can be used in place of the preheat ring 200 of FIG. 1.

[0053]

[0066] The preheat ring 1100 includes an inner edge 210, a first flat surface 205, an outer edge 1120, and a second flat surface 1115. The second flat surface 1115 is part of a T-shaped surface opposite the flat surface of the first flat surface 205. The inner edge 210 is approximately flush with the outer edge 920. In FIG. 11, the apex of the T-shaped cross section is rounded. The present disclosure contemplates cases where one or more apexes are not rounded (e.g., angular, as shown in FIG. 8A). The cross section of the preheat ring 1100 includes a first section 1131 and a second section 1132 that intersects with the first section 1131. The longitudinal axis of the second section 1132 can be vertically aligned with the geometric center of the first section 1131 or can be offset from the geometric center of the first section 1131.

[0054]

[0067] FIG. 12 is a schematic flow diagram of a method 1200 for processing a substrate, according to one or more embodiments.

[0055]

[0068] Step 1201 includes heating the surface of a preheat ring 200 and a substrate 102. The substrate 102 is positioned on a substrate support 106 within the processing space 136 of a process chamber 100. The preheat ring 200 is disposed outside the substrate 102. For ease of explanation, the processing chamber 100 and preheat ring 200 are described; other embodiments of preheat rings (such as the embodiments shown in FIGS. 4-7 and 9-11) and processing chambers can be used and are considered for method 1200. The preheat ring used comprises the black quartz described above.

[0056]

[0069] Step 1203 includes flowing one or more process gases over a surface (such as first flat surface 205) of preheat ring 200. The one or more process gases are heated by contact with preheat ring 200. The surface of preheat ring 200 is heated at a heating rate of 100° C. per minute or greater. In one or more embodiments, the heating rate is 10° C. per second or greater. In one or more embodiments, the heating rate is greater than 10° C. per second and less than 30° C. per second.

[0057]

[0070] Step 1205 includes flowing heated one or more process gases over the substrate 102. The process gases form one or more layers (e.g., epitaxially) on the substrate 102.

[0058]

[0071] Step 1207 includes evacuating one or more process gases from the chamber through one or more gas exhaust ports 116. The one or more gas exhaust ports 116 are in fluid communication with an exhaust pump 157.

[0059]

[0072] Step 1209 includes stopping the heating of the chamber. The heating is stopped so that the surface of the preheat ring 200 cools at a cooling rate during a cooling period, the cooling rate being no greater than 50° C. per minute.

[0060]

[0073] Step 1211 includes flowing one or more cleaning gases into the processing space 136 of the processing chamber 100 through one or more gas inlets 114. The cleaning gases flow over the surface of the preheat ring 200 and the substrate support 106.

[0061]

[0074] Advantages of the present disclosure include the low thermal conductivity of black quartz and the reduced mass of the preheat ring, which promotes IR blocking while reducing temperature loss between processing cycles. These advantages facilitate improved gas activation and deposition uniformity, modular preheat ring positioning, increased growth rate, increased throughput, shorter processing times (e.g., heat-up times), reduced energy consumption, and reduced costs. Reduced temperature fluctuations promote reduced thermal fatigue, reduced fractures (e.g., cracking), and improved structural stability of the preheat ring. These advantages promote reduced preventative maintenance and more predictable preheat ring positioning within the chamber. These advantages also promote reduced wear and damage to other components (e.g., seals). Various implementations of the preheat ring promote modularity and ease of retrofitting different chambers for different processes (e.g., different processing steps). Another advantage of using black quartz is improved etching, which reduces the impact (e.g., damage from etching) on ​​the preheat ring during chamber cleaning steps. For example, the preheated ring can be etched at relatively high temperatures using chemicals such as hydrochloric acid (HCl). Such benefits can be enhanced at relatively high deposition processing temperatures (including, for example, 900° C. or higher) and relatively high cleaning temperatures (including, for example, 1000° C. or higher).

[0062]

[0075] While this disclosure describes a preheat ring for use in connection with an epitaxial deposition chamber, the present disclosure contemplates that the preheat rings described herein can be used in connection with a variety of other chambers, such as other epitaxial chambers and / or chambers performing other processes.

[0063]

[0076] It is contemplated that one or more embodiments disclosed herein may be combined. By way of example, one or more aspects, features, components, operations, and / or properties of processing chamber 100, controller 120, preheat ring 200, preheat ring 400, preheat ring 600, preheat ring 900, preheat ring 1000, preheat ring 1100, and / or method 1200 may be combined. For example, any of the cross sections shown in Figures 8-11 may be used with any of the preheat rings shown in Figures 2-7. Furthermore, it is contemplated that one or more embodiments disclosed herein may include some or all of the advantages described above.

[0064]

[0077] While the foregoing is directed to embodiments of the present disclosure, other and additional embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A preheat ring suitable for use in a semiconductor processing chamber, comprising: One or more ring segments, an inner edge defining an inner dimension; an outer edge defining an outer dimension; a first plane between the inner edge and the outer edge; a second plane between the inner edge and the outer edge, the second plane being opposite the first plane; One or more ring segments, including Equipped with The one or more ring segments comprise black quartz, and the black quartz is silicon dioxide (SiO ) impregnated with undoped silicon (Si). ２ ) including the preheat ring.

2. The preheat ring of claim 1 , wherein a thickness between the first flat surface and the second flat surface is 3.0 mm or less.

3. 2. The preheat ring of claim 1, wherein a thickness between said first flat and said second flat has a thickness ratio to said inner dimension, said thickness ratio being less than or equal to 0.

020.

4. The preheat ring of claim 1 , wherein the distance between the inner dimension and the outer dimension is a distance ratio to the inner dimension, the distance ratio being less than or equal to 0.

25.

5. The silicon dioxide (SiO ２ 2. The preheat ring of claim 1, wherein the crystalline silicon dioxide particles are naturally occurring.

6. 6. The preheat ring of claim 5, wherein the black quartz has a composition including a mass percentage of greater than 0.0% and less than or equal to 5.0% undoped silicon.

7. The preheat ring of claim 6, wherein the mass percentage of undoped silicon is in the range of 2.4% to 2.6%.

8. The preheat ring of claim 6 , wherein the composition further comprises a mass percentage of silicon dioxide that is greater than or equal to 94.0%.

9. 9. The preheat ring of claim 8, wherein the sum of the mass percentage of undoped silicon and the mass percentage of silicon dioxide is greater than or equal to 99.0%.

10. The preheat ring of claim 1 , wherein the one or more ring segments comprise a full ring or a C-ring.

11. The one or more ring segments include: an emissivity of 0.75 or greater at 1000°C; A thermal conductivity of less than 10.0 W / m K. The preheat ring of claim 1 , further comprising:

12. 1. A processing chamber suitable for use in semiconductor manufacturing, comprising: a chamber body; a window, wherein the chamber body and the window at least partially define a processing space; and a plurality of heat sources configured to heat the processing space; a substrate support disposed within the processing space; a liner configured to at least partially line the chamber body; a preheat ring disposed within the processing chamber and at least partially supported by the liner, One or more ring segments comprising black quartz, the black quartz being composed of silicon dioxide (SiO) impregnated with undoped silicon (Si). ２ ), one or more ring segments Preheat ring including A processing chamber comprising:

13. The processing chamber of claim 12 , wherein the liner comprises the black quartz.

14. The processing chamber of claim 12 , wherein the liner comprises opaque quartz.

15. The processing chamber of claim 12 , wherein the one or more ring segments of the preheat ring and the liner are integrally formed as a monolithic body.

16. The silicon dioxide (SiO ２ 13. The processing chamber of claim 12, wherein the crystalline silicon dioxide particles are naturally occurring.

17. 1. A method of processing a substrate suitable for use in semiconductor processing, comprising: and heating a surface of a preheat ring and a substrate positioned on a substrate support within a processing space of a chamber, the preheat ring being disposed outside the substrate, the preheat ring including one or more ring segments comprising black quartz, the black quartz being a silicon dioxide (SiO ) impregnated with undoped silicon (Si). ２ heating a surface of the preheat ring and the substrate; flowing one or more process gases over the surface of the preheat ring to heat the one or more process gases; flowing the one or more process gases over the substrate to form one or more layers on the substrate; exhausting the one or more process gases; A method comprising:

18. 18. The method of claim 17, wherein the surface of the preheat ring is heated at a heating rate of 100°C per minute or greater.

19. and ceasing heating during a cooling period so that the surface of the preheat ring cools at a cooling rate, the cooling rate being no more than 50° C. per minute.

20. The method of claim 18, further comprising:

20. flowing one or more cleaning gases over the surface of the preheat ring and the substrate support; 20. The method of claim 17, further comprising:

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