Methods for relating each zone of a processing chamber, and related systems and methods.

Abstract

This disclosure relates to a method for associating zones in a processing chamber, as well as related systems and methods. In one implementation, the method for associating zones in a processing chamber includes dividing a processing space into a plurality of zones. The plurality of zones have a first zone number (m) and a second zone number (n). The method includes determining a group number. Determining the group number includes multiplying a first value by a second value, where the first value is related to the first zone number (m) of the plurality of zones, and the second value is related to the second zone number (n) of the plurality of zones.

Description

[Technical Field]

[0001]

[0001] This disclosure relates to a method for associating each zone of a processing chamber (e.g., a flow zone and / or a heating zone) for deposition uniformity and process controllability, as well as related systems and methods. [Background technology]

[0002] Description of related technologies

[0002] Semiconductor substrates are processed according to a variety of applications, including the manufacture of integrated circuit devices and microdevices. However, processes such as epitaxial growth are time-consuming, costly, and inefficient, and can have limited capacity and throughput. Each process may also be limited in terms of film growth rate. Furthermore, the hardware may have relatively large dimensions and occupy a larger area within the manufacturing facility. In addition, the process may involve inconveniences related to temperature control, gas control, and / or control and adjustment from the center to the edge of the substrate. These inconveniences can be exacerbated in relatively complex processing steps. For example, inconveniences can arise in batch epitaxial processing regarding deposition non-uniformity and process controllability.

[0003]

[0003] For this reason, improvements to the equipment and methods are needed in semiconductor processing. [Overview of the project]

[0004] This disclosure relates to a method for associating each zone of a processing chamber for deposition uniformity and process controllability, as well as related systems and methods.

[0005]

[0004] In one implementation, a method for associating each zone of a processing chamber includes dividing the processing space into a plurality of zones along a first direction and a second direction of the processing space. The second direction intersects the first direction. The plurality of zones have a first zone number (m) and a second zone number (n). The method includes determining a group number, which includes determining a first value and a second value. The first value is related to the first zone number (m) of the plurality of zones, and the second value is related to the second zone number (n) of that plurality of zones. Determining a group number includes multiplying the first value by the second value. The method includes grouping the plurality of zones into a plurality of groups, the number of groups being equal to the group number. The method includes connecting one or more gas lines to each of the plurality of groups, so that the same one or more gas lines connect a subset of the plurality of zones grouped into each group.

[0006]

[0005] In one implementation configuration, the apparatus for processing a substrate includes a processing chamber having a processing space comprising a plurality of zones, and one or more substrate supports disposed within the processing space. The apparatus includes a plurality of gas openings formed in one or more side walls of the processing chamber, and a flow guide structure disposed within the processing space. The flow guide structure divides the processing space into a plurality of zones. The apparatus includes a first main line fluidly connected to a first group of the plurality of zones, and the first main line fluidly connects to a first subset of the plurality of zones grouped into the first group. The apparatus includes a second main line fluidly connected to a second group of the plurality of zones, and the second main line fluidly connects to a second subset of the plurality of zones grouped into the second group.

[0007]

[0006] In one implementation, the substrate processing system includes a processing chamber having a processing space including a plurality of zones, one or more substrate supports disposed within the processing space, and a plurality of gas openings formed in one or more side walls of the processing chamber. The system includes a first main line fluidly connected to a first subset of the plurality of gas openings. The first subset is aligned with a first group of the plurality of zones. The system includes a second main line fluidly connected to a second subset of the plurality of gas openings. The second subset is aligned with a second group of the plurality of zones. The system includes one or more flow ratio controllers (FRCs) configured to supply one or more reactive gases to the first main line and the second main line, a first mass flow controller (MFC) configured to supply a first carrier gas to the first main line, and a second MFC configured to supply a second carrier gas to the second main line.

[0008]

[0007] To enable a detailed understanding of the features of the Disclosure listed above, a more detailed description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and should not be considered limiting in scope, and the Disclosure may permit other equally effective embodiments. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic side cross-sectional view of a processing unit in one mounting configuration, along the 1-1 cross-section in Figure 4. [Figure 2] This is an enlarged side cross-sectional view of the processing unit shown in Figure 1, in one implementation configuration. [Figure 3] This is a side cross-sectional view of the processing unit shown in Figure 1, in one implementation configuration, along the 3-3 cross-section in Figure 4. [Figure 4] This is a schematic top cross-sectional view of the processing unit shown in Figures 1-3 in one implementation configuration, along the 4-4 cross-section in Figure 1. [Figure 5]This is a schematic diagram of a method for associating zones in a processing chamber using a single implementation configuration. [Figure 6] These are schematic partial diagrams of the injection section of the processing unit shown in Figures 1-4, based on one implementation configuration. [Figure 7] A schematic diagram of a circuit board processing system using a single mounting configuration. [Figure 8] A schematic diagram of a circuit board processing system using a single mounting configuration. Forms for carrying out the invention

[0010]

[0016] To facilitate understanding, the same reference numerals have been used to indicate identical elements common to multiple figures where possible. It is assumed that elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0011]

[0017] This disclosure relates to a method for associating each zone of a processing chamber for deposition uniformity and process controllability, as well as related systems and methods.

[0012]

[0018] In this disclosure, terms such as “to connect,” “connected,” and “linked” may include welding, fusion, co-melting, press-fitting, and / or fastening using bolts, screw connections, pins, and / or screws. In this disclosure, terms such as “to connect,” “connected,” and “linked” may include, but are not limited to, a single, integrated formation. In this disclosure, terms such as “to connect,” “connected,” and “linked” may include, but are not limited to, a direct connection or an indirect connection via components such as links.

[0013]

[0019] Figure 1 is a schematic side cross-sectional view of the processing apparatus 100 in one configuration along the 1-1 cross-section in Figure 4. The side heat sources 118a and 118b shown in Figure 3 are not shown in Figure 1 for the sake of visual clarity. The processing apparatus 100 includes a processing chamber. The processing chamber has a chamber body 130 that defines a processing space 124.

[0014]

[0020] Within the processing space 124, a cassette 1030 is positioned and at least partially supported by a substrate support assembly 119 (e.g., a pedestal assembly). The cassette 1030 is positioned inside the first shield plate 161. The cassette 1030 includes a first cassette plate 1032, a second cassette plate 1031 separated from the first cassette plate 1032, and multiple levels supporting multiple substrates 107 for simultaneous processing (e.g., epitaxial growth). In the mounting configuration shown in Figure 1, the cassette 1030 supports 12 substrates. The cassette 1030 can support other numbers of substrates, including, but not limited to, 2, 3, 6, or 8 substrates 107.

[0015]

[0021] The processing apparatus 100 includes an upper window 116 (e.g., a dome) positioned between the lid 104 and the processing space 124. The processing apparatus 100 includes a lower window 115 positioned below the processing space 124. One or more upper heat sources 106 are positioned above the processing space 124 and the upper window 116. One or more upper heat sources 106 may be radiant heat sources, such as halogen lamps. One or more upper heat sources 106 are positioned between the upper window 116 and the lid 104. The upper heat sources 106 are positioned to heat the substrate 107 uniformly. One or more lower heat sources 138 are positioned below the processing space 124 and the lower window 115. One or more lower heat sources 138 may be radiant heat sources, such as halogen lamps. The lower heat sources 138 are positioned between the lower window 115 and the floor 134 of the processing space 124. The lower heat sources 138 are positioned to heat the substrate 107 uniformly.

[0016]

[0022] The present disclosure contemplates that other heat sources (in addition to or instead of lamps) may be used as the various heat sources described in the present disclosure. For example, a resistive heater, a light-emitting diode (LED), and / or a laser may be used as the various heat sources described in the present disclosure.

[0017]

[0023] The upper window 116 and the lower window 115 may transmit infrared radiation and may transmit at least 95% of the infrared radiation. The upper window 116 and the lower window 115 may be of a quartz material (e.g., transparent quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window that partially defines the processing space 124. The outer window support 194 supports the inner window 193 and is disposed at least partially within a support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window that partially defines the processing space 124. The outer window support 188 supports the inner window 187.

[0018]

[0024] A substrate support assembly 119 is disposed within the processing space 124. One or more liners 120 are disposed within the processing space 124 to surround the substrate support assembly 119. The one or more liners 120 help shield the chamber body 130 from processing chemicals in the processing space 124. The chamber body 130 is disposed at least partially between the upper window 116 and the lower window 115. The one or more liners 120 are disposed between the processing space 124 and the chamber body 130.

[0019]

[0025] The processing apparatus 100 includes a plurality of gas injection passages 182 formed in the chamber body 130 and fluidly connected to the processing space 124, and one or more gas exhaust passages 172 (a plurality are shown in FIG. 1) formed in the chamber body 130 opposite to the plurality of gas injection passages 182. The one or more gas exhaust passages 172 are fluidly connected to the processing space 124. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 is formed through one or more side walls of the chamber body 130 and through one or more liners 120 covering the one or more side walls.

[0020]

[0026] Each gas injection passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 (two and three are shown in FIG. 1) formed in the one or more liners 120. One or more supply tube systems are fluidly connected to the gas injection passages 182. In FIG. 1, the inner supply tube system 121 and the outer supply tube system 122 are fluidly connected to the gas injection passages 182. The inner supply tube system 121 includes a plurality of inner gas boxes 123, and the inner gas boxes 123 are attached to the chamber body 130 and are in fluid communication with an inner set of the gas injection passages 182. The external supply tube system 122 includes a plurality of external gas boxes 117, and the external gas boxes 117 are attached to the chamber body 130 and are in fluid communication with an outer set of the gas injection passages 182. The present disclosure contemplates that various gas supply systems (e.g., supply tube systems, gas injection passages, gas boxes, etc. different from those shown in FIG. 1) may be used.

[0021]

[0027] The processing apparatus 100 includes a flow guide structure 150 located in the processing space 124. The flow guide structure 150 includes one or more first flow partitions 151 (three partitions are shown in Figure 1) and divides the processing space into a plurality of flow levels 153 (four flow levels are shown in Figure 1). In one or more embodiments, the flow guide structure 150 includes at least three flow levels 153. The flow guide structure 150 includes one or more second flow partitions 152. The second flow partitions 152 are oriented to intersect one or more first flow partitions 151 and divide each of the plurality of flow levels 153 into a plurality of flow sections 154 (two flow sections 154 are shown for each flow level 153 in Figure 1). In the embodiment shown in Figure 1, each first flow partition 151 includes a ring, and each of the one or more second flow partitions 152 includes a cylindrical sleeve, the cylindrical sleeve surrounding the innermost flow section 154 of the flow section 154. One or more first flow partitions 151 are connected to one or more liners 120.

[0022]

[0028] Multiple gas injection passages 182 are arranged as multiple injection levels, with each gas injection passage 182 corresponding to one of the multiple injection levels. Each injection level is aligned with its respective flow level 153. The gas injection passage 182 of each injection level is open (through gas openings 186) to the outermost flow section 154 of its respective flow level. In the implementation shown in Figure 1, two or three gas openings 186 (e.g., inlet openings) are grouped at each flow level, and these gas openings 186 are open to the outermost flow section 154 of each flow level.

[0023]

[0029] The processing apparatus 100 includes a heat shield structure 1060 located in the processing space 124. The heat shield structure 1060 includes a first shield plate 161 and a second shield plate 1062 located inside one or more second flow partitions 152. The second shield plate 1062 is oriented to intersect with the first shield plate 161 and is at least partially supported by one or more liners 120. The first shield plate 161 may be a cylindrical sleeve.

[0024]

[0030] Each of the one or more second flow partitions 152 has a plurality of partition inlet openings 155 and a plurality of partition outlet openings 156. The partition outlet openings 156 are opposite the partition inlet openings 155. As shown in Figure 1, two or three of the partition inlet openings 155 and two or three of the partition outlet openings 156 are grouped at their respective flow levels 153.

[0025]

[0031] The first shield plate 161 has a plurality of shield inlet openings 165 and a plurality of shield outlet openings 166. The shield outlet openings 166 are opposite the shield inlet openings 165. The plurality of partition inlet openings 155 are offset from the plurality of shield inlet openings 165 in the XY plane.

[0026]

[0032] One or more liners 120, one or more first flow partitions 151, one or more second flow partitions 152, one or more third flow partitions 451, a first shield plate 161, and a second shield plate 1062 are formed from one or more of the following: quartz (e.g., transparent quartz such as clear quartz, or opaque quartz such as black quartz), silicon carbide (SiC), or SiC-coated graphite.

[0027]

[0033] Cassette 1030 is located inside the first shield plate 161. A preheating ring 111 is located outside the cassette 1030. The preheating ring 111 is connected to or at least partially supported by one or more liners 120. One or more second flow partitions 152 are connected to or at least partially supported by the preheating ring 111.

[0028]

[0034] A portion of the flow guide structure 150 (e.g., a first flow partition 151) may function as a preheating ring for all flow sections 154 of each flow level 153. The preheating ring 111 may be part of the flow guide structure 150 (e.g., integrated with it). In this disclosure, it is assumed that the preheating ring 111 may be one of the first flow partitions 151.

[0029]

[0035] During processing (e.g., during epitaxial growth), one or more process gases P1 are supplied to the processing space 124 through an inner supply pipe system 121 and an outer supply pipe system 122, and through a plurality of gas injection passages 182. One or more process gases P1 are supplied from one or more gas sources 196 that are fluidly connected to the plurality of gas injection passages 182. Each of the gas injection passages 182 is configured to direct one or more process gases P1 generally radially inward, toward the cassette 1030. Therefore, in some embodiments, the injection passages 182 may be part of a cross-flow gas injector. The flow(s) of one or more process gases P1 are divided into a plurality of flow levels 153. Dividing the process gas(s) into a plurality of flow levels 153 facilitates uniform processing (e.g., deposition) on the substrate, uniformity from center to edge, and process control.

[0030]

[0036] The processing apparatus 100 includes an exhaust pipe system 190. One or more process gases P1 can be exhausted through exhaust openings formed in one or more liners 120, exhaust channels formed in the chamber body 130, and through an exhaust box 1091. One or more process gases P1 flow out of the exhaust box 1091 and proceed to an optional common exhaust box 1092, and exit through conduits using one or more pumping devices 197 (e.g., one or more vacuum pumps).

[0031]

[0037] One or more process gases P1 may include, for example, a purge gas, a cleaning gas, and / or a deposition gas. The deposition gas may include, for example, one or more reactive gases carried by one or more carrier gases. One or more reactive gases may include silicon and / or germanium-containing gases such as silane (SiH4), disilane (Si2H6), dichlorosilane (SiH2Cl2), and / or germane (GeH4), chlorine-containing etching gases such as hydrogen chloride (HCl), and / or dopant gases such as phosphine (PH3) and diborane (B2H6). One or more purge gases may include, for example, one or more of argon (Ar), helium (He), nitrogen (N2), hydrogen chloride (HCl), and / or hydrogen (H2).

[0032]

[0038] The purge gas P2 supplied from the purge gas source 129 is introduced into the bottom region 105 of the processing space 124 through one or more purge gas inlets 184 formed in the side wall of the chamber body 130.

[0033]

[0039] One or more purge gas inlets 184 are positioned at a height below the gas injection path 182. If one or more liners 120 are used, a portion of one or more liners 120 may be positioned between the gas injection path 182 and one or more purge gas inlets 184. In any case, one or more purge gas inlets 184 are configured to direct the purge gas P2 generally radially inward. One or more purge gas inlets 184 may be configured to direct the purge gas P2 upward. During the film formation process, the substrate support assembly 119 is positioned to facilitate the flow of the purge gas P2 across the back of the cassette 1030 and substantially along the flow path. The purge gas P2 exits the bottom region 105 and is discharged from the processing apparatus 100 through one or more purge gas exhaust passages 102 located in the processing space 124 opposite the one or more purge gas inlets 184.

[0034]

[0040] The substrate support assembly 119 includes a first support frame 198 and a second support frame 199 at least partially positioned around the first support frame 198. The second support frame 199 includes arms connected to the cassette 1030, and the cassette 1030 can be raised and lowered by raising and lowering the second support frame 199. The cassette 1030 is suspended by a number of lift pins 189. When the cassette 1030 is lowered, the lift pins 189 begin to contact the arms of the first support frame 198. By lowering the cassette 1030 further, the lift pins 189 contact the substrate inside the cassette 1030, and the lift pins 189 lift the substrate. The bottom region 105 of the processing unit 100 is defined between the floor 134 and the cassette 1030. The stems 125 of each of the support frames 198 and 199 extend through the bottom 135 of the chamber body 130 and the floor 134. The stem 125 is connected to each motor 164, which is configured to independently raise and lower and / or rotate the cassette 1030 using a second support frame 199 and to independently raise and lower the lift pin 189 using a first support frame 198.

[0035]

[0041] Pedestal bellows ports 160 are formed within the floor 134 and bottom 135 of the chamber body 130. Pedestal bellows ports 116 extend through the bottom 135 of the chamber body 130. The pedestal bellows ports 160 have a diameter larger than the diameter of the stems 125 and surround each stem 125 where it penetrates the bottom 135 of the chamber body 130. The pedestal bellows ports 160 surround the stems 125 in a circular manner. A bellows assembly 158 is positioned around each pedestal bellows port 160 to help reduce or eliminate vacuum leakage to the outside of the chamber body 130. Each bellows assembly 158 surrounds a portion of the stems 125 that are located outside the chamber body 130. The bellows assembly 158 is connected between the outer surface of the bottom 135 of the chamber body 130 and the base member 180. The base member 180 can accommodate the motor 164 and a portion of the stem 125 connected to the motor 164. The bellows assembly 158 may be made of metal or a metallized material and configured to form a gas flow channel 162. The gas flow channel 162 is defined as the region between the external stem 125 and the bellows assembly 158. The gas flow channel 162 extends from the pedestal bellows port 160 to the base member 180. In this way, the gas flow channel 162 forms a hollow cylindrical passage between the bellows assembly 158 and the stem 125. The gas flow channel 162 may be fluid-connected between the bottom region 105 and the exhaust conduit and used to pump (e.g., exhaust) gas from the bottom region 105 through the pedestal bellows port 160.

[0036]

[0042] An opening 136 (substrate transfer opening) for transporting substrates is formed through one or more side walls of the chamber body 130. The opening 136 can be used to transport substrates 107 to or from the cassette 1030, or, for example, to or from the processing space 124. In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 may be connected to a suitable valve that allows the substrate to pass through. For visual clarity, the opening 136 is shown as a ghost in Figures 1 and 3.

[0037]

[0043] The processing apparatus 100 may include one or more temperature sensors 191, 192, 282, such as optical pyrometers, for measuring the temperature inside the processing apparatus 100 (e.g., the surface of the upper window 116 and / or one or more surfaces of the substrate 107, the heat shield structure 1060 and / or the cassette 1030). One or more temperature sensors 191, 192 are located on the lid 104. One or more temperature sensors 282 (e.g., lower pyrometers) are located below the lower window 115. One or more temperature sensors 282 may be located adjacent to and / or on the bottom 135 of the chamber body 130.

[0038]

[0044] In one or more embodiments, the upper temperature sensors 191, 192 are directed toward the top of the cassette 1030 (e.g., the top surface of the second cassette plate 1031). In one or more embodiments, the side temperature sensor 281 is directed toward the first shield plate 161 and / or the substrate support 212 of the cassette 1030. In one or more embodiments, the lower temperature sensor 282 is directed toward the bottom surface of the cassette 1030 (e.g., the bottom surface of the first cassette plate 1032).

[0039]

[0045] The processing unit 100 includes a controller 1070 configured to control the processing unit 100 or its components. For example, the controller 1070 can control the operation of the components of the processing unit 100 by directly controlling them or by controlling controllers associated with those components. During processing, the controller 1070 enables data collection and feedback from each chamber to adjust and control the performance of the processing unit 100.

[0040]

[0046] The controller 1070 generally includes a central processing unit (CPU) 1071, memory 1072, and support circuitry 1073. The CPU 1071 may be one of any form of general-purpose processor available for use in an industrial environment. Memory 1072, or non-temporary computer-readable media, is accessible by the CPU 1071 and may be one or more memory sources such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, or other forms of local or remote digital storage. Support circuitry 1073 is connected to the CPU 352 and may include a cache, clock circuitry, input / output subsystems, and power supply, etc.

[0041]

[0047] The various methods (such as Method 500) and processes disclosed herein can generally be performed by the CPU 1071 executing computer instruction code stored, for example, as a software routine in memory 1072 (or memory of a particular process chamber) under the control of the CPU 1071. Once the computer instruction code is executed by the CPU 1071, the CPU 1071 controls the components of the processing unit 100 to perform the processing according to the various methods and processes described herein. In one embodiment, which can be combined with other embodiments, instructions are stored in memory 1072 (a non-temporary computer-readable medium), and once the instructions are executed, the methods (e.g., Method 500) and processes (e.g., processes 502-518) described herein are performed. The controller 1070 can communicate with, for example, one or more heat sources, gas sources, and / or vacuum pumps of the processing unit 100 to perform multiple processes.

[0042]

[0048] The instructions stored in the memory 1072 of the controller 1070 may include one or more machine learning / artificial intelligence algorithms that can be executed in addition to the processes described herein. For example, one or more machine learning / artificial intelligence algorithms may use measured data (such as flow rate data and / or temperature data) to optimize the gas conditions described herein. For example, pyrometers and flow sensors 475 attached to the first shield plate 161 and the second shield plate 1062 may measure flow rate data and temperature data. One or more machine learning / artificial intelligence algorithms may use, for example, a linear regression model and / or a ranking model to adjust and optimize the gas conditions for the zone groups described herein.

[0043]

[0049] Asymmetry can be automatically detected and corrected using one or more machine learning / artificial intelligence algorithms.

[0044]

[0050] The various processes described herein (for example, steps 502-518 of method 500) can be performed automatically using the controller 1070 or manually by a user. Alternatively, certain processes can be performed both automatically and manually by a user.

[0045]

[0051] Figure 2 is an enlarged schematic side cross-sectional view of the processing unit 100 of Figure 1 in one implementation configuration.

[0046]

[0052] Cassette 1030 includes multiple levels 211 positioned between the first cassette plate 1032 and the second cassette plate 1031.

[0047]

[0053] Each level 211 includes an arc-shaped support portion 212 with one or more inner protrusions 213 for supporting the substrate 107. A portion of the cassette 1030 is shown in Figure 2. The cassette 1030 includes a first level 211a which includes a first arc-shaped support portion 212a having a first inner protrusion 213a, and a second level 211b which includes a second arc-shaped support portion 212b having a second inner protrusion 213b. The first arc-shaped support portion 212a and the second arc-shaped support portion 212b are positioned between the first cassette plate 1032 and the second cassette plate 1031.

[0048]

[0054] The cassette 1030 includes a first opening 215 on the outside of the first arc-shaped support portion 212a, and a second opening 216 between the first arc-shaped support portion 212a and the second arc-shaped support portion 212b. Each of the inner projections 213a to 213c includes support surfaces 217a to 217c.

[0049]

[0055] Each of the shield inlet openings 165 and each of the shield outlet openings 166 are aligned between the two arc-shaped support portions 212 (see shield outlet opening 166 in Figure 2). The positions of the shield inlet openings 165 and shield outlet openings 166 allow for the separate supply of one or more process gases P1 to the gaps between adjacent substrates 107, thereby improving processing uniformity and controllability.

[0050]

[0056] The cassette 1030 includes a plurality of mounting posts 1081. The mounting posts 1081 extend through arc-shaped support sections 212 (including a first arc-shaped support section 212a, a second arc-shaped support section 212b, and a third arc-shaped support section 212c).

[0051]

[0057] Each of the multiple mounting posts 1081 includes a projection interface between the corresponding mounting post and the arc-shaped support portion 212. In one or more embodiments, the projection 220 may extend outward relative to the mounting post 1081. In one or more embodiments, the projection may extend inward relative to the inner surface of the arc-shaped support portion 212, for example, into a groove formed on the outer surface of the mounting post 1081. For example, the projection 220 may include one or more pins or one or more arc-shaped ring segments.

[0052]

[0058] The substrate support assembly 119 includes an outer ring 1033 that supports the first cassette plate 1032.

[0053]

[0059] The arc-shaped support portion 212 of each level 211 is a ring or one or more ring segments. Each arc-shaped support portion 212 may include a gap 501 such that each arc-shaped support portion 212 is a single C-ring segment. The cassette 1030 includes a base segment 505, and the arms of the second support frame 199 may be connected to the base segment 505 through the first cassette plate 1032. The first cassette plate 1032 and the outer ring 1033 may consist of two parts (as shown in Figure 2) or be integrated into a single part. In one or more embodiments, a mounting post 1081 penetrates at least partially through the second cassette plate 1031 at its first end and at least partially through the base segment 505 at its second end. The mounting post 1081 may be attached to or integrally formed with the base segment 505. In one or more embodiments, the mounting post 1081 is attached to or integrally formed with the upper surface 506 of the base segment 505.

[0054]

[0060] Figure 3 is a side cross-sectional view of the processing unit 100 of Figure 1 in one implementation configuration, along the 3-3 cross-section in Figure 4. The cross-sectional view shown in Figure 3 is the same as the cross-sectional view shown in Figure 1, rotated by 55 degrees.

[0055]

[0061] The processing apparatus 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistance heaters, side LEDs, and / or side lasers) located outside the processing space 124. One or more second heat sources 118b face one or more first heat sources 118a across the processing space 124.

[0056]

[0062] To ensure visual clarity, the flow guide structure 150 and the heat shield structure 1060 are not shown in Figure 3. Furthermore, this disclosure assumes that the processing apparatus 100 shown in Figures 1-3 may omit the flow guide structure 150 and / or the heat shield structure 1060. In such an implementation, one or more process gases P1 flow from the gas injection passage 182 into the outer ring of the processing space 124, then into the outer openings 215, 216 between the arc-shaped support parts 212, and then into the gaps between the substrates 107. One or more process gases P1 flow out of the gaps and into the exhaust-side openings 215, 216 of the substrates 107, enter the outer ring of the processing space 124, and enter one or more gas exhaust passages 172. This disclosure also assumes that multiple lines (conduits, etc.) within the processing space 124 may connect each gas inlet 182 to each inlet opening of the cassette 1030.

[0057]

[0063] In addition to one or more temperature sensors 191, 192 located above the processing space 124 and above the second shield plate 1062, the processing apparatus 100 may also include one or more temperature sensors 281 (e.g., optical pyrometers) for measuring the temperature inside the processing apparatus 100 (e.g., the temperature of the surface of the upper window 116 and / or one or more surfaces of the substrate 107, the heat shield structure 1060, the multiple windows 457 (described later), and / or the cassette 1030). One or more temperature sensors 281 are side temperature sensors (e.g., side pyrometers) and are located outside the processing space 124, outside one or more second flow partitions 152 of the flow guide structure 150, outside one or more second flow partitions 152 of the flow guide structure 150, and outside the multiple windows 457. One or more temperature sensors 281 can be radially aligned with, for example, the second flow partitions 152 or the multiple windows 457 (as shown in Figure 3).

[0058]

[0064] One or more side temperature sensors 281 (e.g., one or more pyrometers) can be used to measure the temperature within the processing space 124 from each side. The side sensors 281 are arranged at multiple sensor levels (three sensor levels are shown in Figure 3). In one or more embodiments, the number of sensor levels is equal to the number of levels in the cassette 1030. Each sensor level corresponds to each level in the cassette 1030, and one or more side sensors at each sensor level are configured to measure the temperature at each level (e.g., the temperature of the substrate and / or substrate support at each level). Each side sensor 281 can be oriented horizontally or towards the substrate 107 and arc-shaped support 212 at each level of the cassette 1030 (e.g., at a downward angle).

[0059]

[0065] Figure 4 is a schematic top cross-sectional view of the processing unit 100 shown in Figures 1-3 in one implementation configuration, along the 4-4 cross-section in Figure 1.

[0060]

[0066] The flow guide structure 150 includes one or more third flow partitions 451 positioned to intersect with one or more first flow partitions 151 and one or more second flow partitions 152. The one or more third flow partitions 451 divide the plurality of flow sections 154 into a plurality of flow zones 454 (three flow zones 454 are shown in the flow section 401 in Figure 4). In one or more embodiments, the flow guide structure 150 includes at least two flow zones 454 for the flow section 401. Each of the plurality of flow zones 454 has an angle size A1 in the range of 15 to 25 degrees. In one or more embodiments, the angle size A1 is 20 degrees. Other values ​​for the angle size A1 are also possible. Each of the flow zones 454B, 454C has a central axis offset from section 1-1 at an angle equal to the angle size A1.

[0061]

[0067] Each of the multiple flow sections 154 includes multiple inner voids 455 defined by multiple flow zones 454, and the flow guide structure 150 and the heat shield structure 1060 do not have gas lines. The processing apparatus 100 does not have gas lines inside the gas channel 185 or inside the gas exhaust passage 172. One or more process gases P1 flow from the gas channel 185 through one or more gas openings 186 to the flow section 154 on the injection side of the cassette 1030. One or more process gases flow from the flow section 154 through the shield inlet opening 165 into the inner space surrounded by the first shield plate 161. In the inner space, the process gases P1 flow between the arc-shaped support portion 212 and the substrate 107. One or more process gases P1 flow out from the inner space through the first shield plate 161 on the exhaust side of the cassette 1030 and out through the flow section 154 on the exhaust side of the cassette 1030. In one or more liners 120, a flow guide structure 150, and a heat shield structure 1060, one or more process gases P1 flow through openings and gaps rather than through gas lines (such as pipes or conduits). The injection of one or more process gases P1 flows directly from the shield inlet opening 165, enters the opening between the arc-shaped supports 212, and then flows directly from the opening between the arc-shaped supports 212 into the gap between the substrates 107.

[0062]

[0068] In one or more embodiments, since the heat shield structure 1060 is isothermal during processing (e.g., during heating using a heat source), the first temperature gradient along the height of the first shield plate 161 is a difference of 5% or less across the entire height. Since the heat shield structure 1060 is isothermal, the second temperature gradient along the width of the second shield plate 1062 is a difference of 5% or less across the entire width.

[0063]

[0069] Each injection level's gas injection passage 182 includes one or more first gas channels 185A (one shown) and one or more first gas openings 186A (two shown) aligned with the first flow zone 454A of the plurality of flow zones 454. Each injection level's gas injection passage 182 includes one or more second gas channels 185B (one shown) and one or more second gas openings 186B aligned with the second flow zone 454B of the plurality of flow zones 454. The second flow zone 454B is located on the first side of the first flow zone 454A. Each injection level's gas injection passage 182 includes one or more second gas channels 185C (one shown) and one or more first gas openings 186C aligned with the third flow zone 454C of the plurality of flow zones 454. The third flow zone 454C is located second to the first flow zone 454A.

[0064]

[0070] The third flow partition 451 extends radially outward between the first shield plate 161 and the chamber body 130, and the multiple flow zones 454 are pi-shaped.

[0065]

[0071] Each of the gas openings 186, partition inlet opening 155, partition outlet opening 156, shield inlet opening 165, and / or shield outlet opening 166 may include a hole (e.g., a cylindrical hole) and / or an arc-shaped slot. At each injection level, each of the gas openings 186, partition inlet opening 155, partition outlet opening 156, shield inlet opening 165, and / or shield outlet opening 166 may include a single opening or multiple openings. For example, the three shield outlet openings 166 shown in Figure 4 can be combined to form a single arc-shaped slot.

[0066]

[0072] The multiple partition inlet openings 155 are offset from the multiple shield inlet openings 165 in a direction D1 parallel to one or more third flow partitions 451.

[0067]

[0073] Multiple partition inlet openings 155 include one or more partition inlet openings 155A, 155B, 155C aligned with each of the multiple flow zones 454A, 454B, 454C. Multiple shield inlet openings 165 include one or more shield inlet openings 165A, 165B, 165C aligned with each of the multiple flow zones 454A, 454B, 454C. Multiple partition outlet openings 156 include one or more partition outlet openings 156A, 156B, 156C aligned with each of the multiple flow zones 454A, 454B, 454C. Multiple shield outlet openings 166 include one or more shield outlet openings 166A, 166B, 166C aligned with each of the multiple flow zones 454A, 454B, 454C.

[0068]

[0074] One or more liners 120 include a plurality of liner gaps 421. The liner gaps 421 are formed in one or more liners 120 and / or may be located between the liners of one or more liners 120. The flow guide structure 150 includes a plurality of flow gaps 456 between a plurality of third flow partitions 451. Each of the side heat sources 118a-118d and the window 457 has a central axis CA1 offset from the cross section 1-1 by an angle A2. The angle A2 can be in the range of 50 to 60 degrees. In one or more embodiments, the angle A2 is 55 degrees. Other values ​​for the angle A2 are also possible. In one or more embodiments, each of the plurality of injection levels 153 includes four side heat sources 118a-118d, such that the number of side heat source levels is equal to the number of injection levels 153 and the number of flow levels. In one or more embodiments, the multiple side heat sources 118a to 118d are arranged at multiple heat source levels corresponding to multiple flow levels and multiple injection levels 153, and each of the multiple side heat sources 118a to 118d is independently controlled to independently heat each flow level and each injection level 153. For example, separate irradiations can be directed to each flow level and each injection level 153.

[0069]

[0075] Multiple flow gaps 456 are aligned with multiple liner gaps 421. The flow guide structure 150 includes multiple windows 457 that are at least partially aligned with the multiple liner gaps 421. Multiple side heat sources 118a-118d are configured to generate heat (e.g., light) through the multiple windows 457 and the multiple flow gaps 456. The windows 457 and flow gaps 456 are used to direct the heat (e.g., light) towards the first shield plate 161, thereby promoting heating of the isothermal heat shield structure 1060 rather than the flow guide structure 150. The multiple windows 457 are offset from each other circumferentially along the chamber body 130. In one or more embodiments, the windows 457 are formed of quartz. In one or more embodiments, the windows 457 are substantially transparent, and the heat shield structure 1060 and the flow guide structure 150 are substantially opaque, respectively.

[0070]

[0076] As shown in Figure 1, multiple partition inlet openings 155, multiple partition outlet openings 156, multiple shield inlet openings 165, and multiple shield outlet openings 166 are aligned between the floor 134 and the ceiling 137 of the processing space 124. The injection and exhaust of process gas P1 and purge gas P2 into and out of the processing space is performed through one or more sides 139 of the processing space 124 (between the floor 134 and the ceiling 137).

[0071]

[0077] As shown in Figure 1, the opening 136 is located below the flow guide structure 150, below the heat shield structure 1060, and below the preheating ring 111. When the substrate support assembly 119 and cassette 1030 are in the raised position for processing, the cassette 1030 (including the first cassette plate 1032) is located above the opening 136. In the raised position, the shoulder portion 1034 of the outer ring 1033 of the substrate support 119 contacts the preheating ring 111, substantially separating (e.g., sealing) the bottom region 105 and the opening 136 from one or more process gases P1. This reduces gas leakage through the opening 136 and also reduces corrosion and contamination of chamber components and substrates during storage. The substrate support assembly 119 and the cassette 1030 (including the first cassette plate 1032 and the outer ring 1033) reduce the distance the cassette 1030 travels (e.g., the amount of downward movement) when inserting or removing the substrate 107 into or out of the cassette 1030.

[0072]

[0078] As shown in Figure 4, the flow guide structure 150 includes an injection section 401, an exhaust section 402, a first cross-flow section 403, and a second cross-flow section 404. Each of sections 401 to 404 includes one or more first flow partitions 151 and one or more second flow partitions 152. The first cross-flow section 403 and the second cross-flow section 404 each include two third flow partitions 451, and the injection section 401 and the exhaust section 402 each include four third flow partitions 451. In one or more embodiments, each of sections 401 to 404 has the same number of injection levels. In the embodiment shown in Figure 4, each injection level gas injection passage 182 includes one or more first gas openings 186A-186C facing one or more gas exhaust passages 172, one or more second gas openings 186D circumferentially arranged between one or more first gas openings 186A-186C and one or more gas exhaust passages 172, and one or more third openings 186E facing one or more second gas openings 186D. The one or more first gas openings 186A-186C, the one or more second gas openings 186D, and the one or more third openings 186E are each aligned with the respective flow zones 454A-454E.

[0073]

[0079] In this disclosure, it is assumed that sections 401 to 404 of the flow guide structure 150 are connected to one another (for example, formed integrally as a ring structure) or separated from one another for independent movement.

[0074]

[0080] One or more gas sources 196 supply one or more process gases P1 through the injection section 401, while one or more gas sources 496, 498 can supply process gases P1 to the processing space 124 through the first cross-flow section 403 and the second cross-flow section 404. The third flow partition 451 substantially separates (e.g., seals) the flow gap 456 of sections 401-404 from the one or more process gases P1. The third flow partition 451 helps reduce interference between the process gases P1 and heating (e.g., light) by the side heat sources 118a-118d.

[0075]

[0081] Figure 5 is a schematic diagram of a method 500 for relating each zone of a processing chamber having a processing space, in one implementation configuration.

[0076]

[0082] Step 501 of Method 500 includes dividing a processing space into a plurality of zones along a first direction and a second direction of the processing space. The division can be physical (e.g., using barriers such as flow dividers) or visual (e.g., using reference lines for visual reference without using barriers). The second direction intersects the first direction. In one or more embodiments, the second direction is perpendicular to the first direction. The plurality of zones have a first zone number (m) and a second zone number (n). In one or more embodiments, the first zone number (m) and the second zone number (n) can each be defined by the number of barriers (e.g., flow dividers) that divide the processing space for flow.

[0077]

[0083] The first zone number (m) and the second zone number (n) can each be equal to or greater than the total number of asymmetries identified along the first and second directions, respectively. Asymmetries can be asymmetries in physical conditions, such as uneven spacing between substrates and / or uneven placement of barriers present between substrates along the first and second directions, respectively. The disclosure also assumes the presence of other asymmetries. For example, the asymmetry may be asymmetries in other physical conditions, such as geometric design (e.g., distance to a reference plane, shape, and / or dimensions), the size of the local space (zone), the composition of the gas, the residence time of the gas in the local space, the time required to heat to the temperature, the energy required to heat to the temperature, the energy required to transfer the gas into and out of the local space, the material of the chamber, the material of the substrate surface, and / or the temperature of the substrate surface, and / or the processing time inside and around the local space. In one or more embodiments, an asymmetry is identified if it exists throughout all time before, during, and after processing (e.g., deposition). In one or more embodiments, asymmetry is identified if there is a difference of 5% or more, for example 10%, or more, in the values ​​of the physical conditions between any two zones.

[0078]

[0084] Step 502 of Method 500 includes determining whether a first symmetry condition is satisfied along a first direction of the processing chamber. In one or more embodiments, the first symmetry condition is not satisfied if at least one asymmetry is identified between any two zones along the first direction of the processing space. The disclosure assumes that any two zones may or may not be aligned with each other in the first direction. In one or more embodiments, the first symmetry condition is satisfied if no asymmetry is identified in the first direction of the processing space.

[0079]

[0085] As described in this disclosure, asymmetry may exist with respect to various conditions, such as one or more physical conditions. This disclosure also assumes that multiple zones may be geometrically symmetrical (e.g., mirror images of each other with respect to a reference plane), and that asymmetry may exist with respect to one or more other physical conditions of multiple zones (e.g., gas residence time in the local space of the zones).

[0080]

[0086] The determination in step 502 includes determining that a first plane symmetry along a first direction 601 (see Figure 6) is satisfied, that is, that the zone is geometrically symmetric (e.g., mirror image) with respect to a first central plane 603 (see Figure 6) perpendicular to the first direction 601.

[0081]

[0087] Step 504 includes determining whether a second symmetry condition is satisfied along a second direction of the processing chamber. In one or more embodiments, the second symmetry condition is not satisfied if at least one asymmetry is identified between any two zones along a second direction of the processing space. The disclosure assumes that any two zones may or may not be aligned with each other in the second direction. In one or more embodiments, the second symmetry condition is satisfied if no asymmetry is identified in a second direction of the processing space.

[0082]

[0088] The determination in step 504 includes determining that a second plane symmetry along the second direction 602 (see Figure 6) is satisfied, that is, that the zone is geometrically symmetric (e.g., mirror image) with respect to a second central plane 604 (see Figure 6) perpendicular to the second direction 602.

[0083]

[0089] If it is determined that both the first and second plane symmetries are satisfied, then two-fold plane symmetry is satisfied in both the first and second directions.

[0084]

[0090] Step 510 includes determining a group number. Determining the group number includes determining a first value and a second value, and multiplying the first value by the second value. The first value is associated with a first zone number (m) of a plurality of zones, and the second value is associated with a second zone number (n) of that plurality of zones. In one or more embodiments, the determined group number is less than a reference number equal to the value obtained by multiplying the first zone number (m) by the second zone number (n).

[0085]

[0091] Optionally, if both the first and second plane symmetries are satisfied, determining the first value involves dividing the first zone number (m) by 2.0 to obtain the first result, and if the first result is not an integer, rounding up to the nearest integer. If the first result is an integer, there is no need to round up the first result, and the first value is equal to the first result. If both the first and second plane symmetries are satisfied, determining the second value involves dividing the second zone number (n) by 2.0 to obtain the second result, and if the second result is not an integer, rounding up to the nearest integer. If the second result is an integer, there is no need to round up the second result, and the second value is equal to the second result. As described above, the determination of the group number (when both the first and second plane symmetries are satisfied) can be expressed by the following equation 1. Group number = (rounded up (m / 2)) * (rounded up (n / 2)) (Equation 1)

[0086]

[0092] If the second plane symmetry is satisfied but the first plane symmetry is not, the first value is equal to the first zone number (m). If the second plane symmetry is satisfied but the first plane symmetry is not, determining the second value involves dividing the second zone number (n) by 2.0 and rounding up to the nearest integer if the result is not an integer. If the result is an integer, there is no need to round up, and the second value is equal to the result. As described above, the determination of the group number (when the second plane symmetry is satisfied but the first plane symmetry is not) can be expressed by the following equation 2. Group number = (m) * (rounded up (n / 2)) (Equation 2)

[0087]

[0093] Optionally, if the first plane symmetry is satisfied but the second plane symmetry is not, the second value is equal to the second zone number (n). If the first plane symmetry is satisfied but the second plane symmetry is not, determining the first value involves dividing the first zone number (m) by 2.0 and rounding up to the nearest integer if the result is not an integer. If the result is an integer, there is no need to round up, and the first value is equal to the result. As described above, the determination of the group number (when the first plane symmetry is satisfied but the second plane symmetry is not) can be expressed by the following equation 3. Group number = (rounded up (m / 2)) * (n) (Equation 3)

[0088]

[0094] Step 512 includes grouping multiple zones into multiple groups. Each group has a number equal to the group number. The multiple zones can be represented by the following matrix, where each zone (N i,j ) has a first position (i) along the first direction and a second position (j) along the second direction. TIFF2026510180000002.tif92170

[0089]

[0095] In one or more embodiments, grouping of multiple zones (step 512) includes performing a first grouping process for each zone. The first grouping process includes grouping each zone along a first direction 601 (see Figure 6) with each of the other zones that are symmetrical (e.g., with respect to one or more physical conditions). In such embodiments, for each zone, each zone is not grouped with one or more zones that are not symmetrical (e.g., with respect to one or more physical conditions) along the first direction 601. In one or more embodiments, if the first symmetry condition (step 502) is met, grouping of multiple zones (step 512) includes grouping each zone with each of the other zones that have the same second position (j).

[0090]

[0096] In one or more embodiments, grouping of multiple zones includes performing a second grouping process for each zone. The second grouping process includes grouping each zone along the second direction 602 (see Figure 6) with each of the other zones that are symmetrical (e.g., with respect to one or more physical conditions). In such embodiments, for each zone, each zone is not grouped with one or more zones that are not symmetrical (e.g., with respect to one or more physical conditions) along the second direction 602. In one or more embodiments, if the second symmetry condition (step 504) is met, grouping of multiple zones (step 512) includes grouping each zone with each of the other zones that have the same first position (i).

[0091]

[0097] Optionally, in one or more embodiments, if the first plane symmetry is satisfied, the grouping of multiple zones (step 512) includes performing a first grouping process for each zone having a first position (i) along the first direction and a second position (j) along the second direction. The first grouping process groups each zone along the first direction with each of the other zones having the same second position (j) along the second direction and a first reference position along the first direction. The first reference position is equal to the first zone number (m) minus the first position (i) plus 1. The first position (i) is repeated from 1 to the first zone number (m), and the second position (j) is repeated from 1 to the second zone number (n). As described above, the grouping in the first grouping process can be expressed by the following equation 4: N i, j =N m-i+1, j (Equation 4)

[0092]

[0098] Optionally, in one or more embodiments, if the second plane symmetry is satisfied, the grouping of multiple zones (step 512) includes performing a second grouping process for each zone having a first position (i) along the first direction and each zone having a second position (j) along the second direction. The second grouping process groups each zone along the second direction with each of the other zones having the same first position (i) along the first direction and a second reference position along the second direction. The second reference position is equal to the second zone number (n) minus the second position (j) plus 1. The first position (i) is repeated from 1 to the first zone number (m), and the second position (j) is repeated from 1 to the second zone number (n). As described above, the grouping in the second grouping process can be expressed by the following equation 5: N i, j =N i, n-j+1 (Equation 5)

[0093]

[0099] Step 514 includes connecting one or more gas lines to each of several groups, so that the same one or more gas lines connect to subsets of several zones grouped into each group.

[0094]

[0100] Optional step 516 includes specifying gas conditions for each of the multiple groups. In one or more embodiments, the gas conditions include one or more of the following: composition ratio, partial pressure, and / or flow rate. The composition ratio may include the atomic percentage concentration (one or more) of one or more elements in the composition. The flow rate may be velocity. The flow rate may be, for example, volumetric flow rate or mass flow rate. In one or more embodiments, the heating conditions include heating power applied to a heat source for heating each group of zones.

[0095]

[0101] Optional step 518 includes supplying one or more gases to each of the multiple groups. This ensures that one or more gases are supplied under the same gas conditions to subsets of the multiple zones grouped into each group. In one or more embodiments, the same gas conditions include one or more of the following: gas composition, pressure, and / or flow rate.

[0096]

[0102] Optional step 520 includes adjusting one or more flow ratio controllers (FRCs) and / or mass flow controllers (MFCs) associated with a group of multiple groups.

[0097]

[0103] This disclosure assumes that one or more (e.g., all) of steps 502-522 of Method 500 may be repeated. In one or more embodiments, Method 500 is performed on an injection section 401 of the processing apparatus 100 to group a first set of zones, Method 500 is repeated on a first cross-flow section 403 of the processing apparatus 100 to group a second set of zones, and / or Method 500 is repeated on a second cross-flow section 404 of the processing apparatus to group a third set of zones. In one or more embodiments, the first zone number (m) is equal to the number of flow levels 153 and injection levels for each section 401, 403, 404. In one or more embodiments, the second zone number (n) is equal to the number of flow zones 454 for each section 401, 403, 404. For example, the first zone number (m) and the second zone number (n) can be defined by the number of first flow partitions 151 and the number of third flow partitions 451. The disclosure assumes that the first zone number (m) may differ from the number of flow levels 153 and the number of injection levels for each section 401, 403, and 404, and / or that the second zone number (n) may differ from the number of flow zones 454 for each section 401, 403, and 404.

[0098]

[0104] Method 500 promotes simplification of gas supply hardware, improvement of cost efficiency, and improvement of process control (e.g., process uniformity and / or independent gas control, etc.).

[0099]

[0105] In this disclosure, various orders of method 500 are assumed. For example, step 512 can be performed after step 510 or before step 510.

[0100]

[0106] FIG. 6 is a schematic partial view of the injection section 401 of the processing apparatus 100 of FIGS. 1 - 4 according to one implementation form. In the exemplary embodiment shown in FIG. 6, the injection section 401 is divided into 12 zones (N). The first zone number (m) along the first direction 601 is 4, and the second zone number (n) along the second direction 602 is 3. Both the first symmetry condition and the second symmetry condition (steps 502 and 504) are satisfied. Divide 4 of the first zone number (m) by 2 to obtain a first result of 2. Since the first result does not need to be rounded up, the first value (step 510) is 2. Divide 3 of the second zone number (n) by 2 to obtain a second result of 1.5. Since the second result is not an integer, the second result is rounded up and the second value (step 510) becomes 2. Multiply 2 (the first value) by 2 (the second value) to make the group number (step 510) 4. Therefore, the 12 zones in FIG. 6 are grouped into 4 groups 611, 612, 613, 614.

[0101]

[0107] The 12 zones are each grouped into a total of 4 groups according to step 512. As an example, the first group 611 of the 4 groups includes the first zone (N 1,1 ), the second zone (N 1,3 ), the third zone (N 4,1 ), the fourth zone (N 4,3 ).

[0102]

[0108] Figure 7 is a schematic partial diagram of a substrate processing system 700 in one mounting configuration. The system 700 includes a processing unit 100. The system 700 includes a first gas circuit 701 configured to supply one or more gases to 12 zones (N) of the injection section 401 of the processing chamber.

[0103]

[0109] System 700 includes a first main line 711, which is fluidly connected to a first subset of gas channels 185A-185C and a plurality of gas openings 186A-186C. The first subset is aligned (e.g., radially aligned) with a first group 611 of a plurality of zones (N).

[0104]

[0110] System 700 includes a second main line 712, which is fluidly connected to a second subset of gas channels 185A-185C and a plurality of gas openings 186A-186C. The second subset is aligned (e.g., radially aligned) with a second group 612 of a plurality of zones (N).

[0105]

[0111] System 700 includes a third main line 713, which is fluidly connected to a third subset of gas channels 185A-185C and a plurality of gas openings 186A-186C. The third subset is aligned (e.g., radially aligned) with a third group 613 of a plurality of zones (N).

[0106]

[0112] System 700 includes a fourth main line 714, which is fluidly connected to a fourth subset of gas channels 185A-185C and a plurality of gas openings 186A-186C. The fourth subset is aligned (e.g., radially aligned) with a fourth group 614 of a plurality of zones (N).

[0107]

[0113] The first gas circuit 701 includes one or more flow ratio controllers (FRCs) 726 configured to supply one or more reactive gases to each of the main lines 711-714. One or more reactive gas sources 721-724 supply one or more reactive gases to the FRC 726. A carrier gas source 725 is configured to supply a carrier gas (e.g., an inert gas or a gas such as H2) to the FRC 726. The carrier gas and one or more reactive gases mix to form a mixture, which the FRC 726 distributes to the main lines 711-714.

[0108]

[0114] The first gas circuit 701 includes mass flow controllers (MFCs) 731-734 for each of the main lines 711-714. Each MFC 731-734 is configured to supply each carrier gas to each main line 711-714. The MFCs 731-734 may supply the same carrier gas (e.g., hydrogen (H2)) to each main line 711-714. For each main line 711-714, the carrier gas supplied from each MFC 731-734 mixes with the mixture from FRC 726 to form an injection composition. The injection composition is delivered through each main line 711-714 to each group 611-614 of the zone corresponding to each main line 711-714.

[0109]

[0115] As described above, the controller 1070 may be configured to perform one or more steps of method 500. The controller 1070 can control the processing of the gas circuit 701 (such as FRC726 and MFC731-734). Using the controller 1070, gas conditions can be specified for each of the main lines 711-714 (and corresponding groups 611-614), and four gas conditions are specified. The four main lines 711-714 can simultaneously and independently supply one or more reactive gases (from FRC726), a carrier gas (from FRC726), and one or more carrier gases (from MFC731-734) to the zone-aligned gas channels 185A-185C and gas openings 186A-186C. The gases are supplied simultaneously to subsets of the gas channels 185A-185C and gas openings 186A-186C under the specified gas conditions. Using FRC726 and / or MFC731-734, the gas flow supplied to each group of zones 611-614 can be controlled independently, promoting a more uniform gas flow and more uniform deposition in the batch processing of the substrate 107. For example, FRC726 and / or MFC731-734 can be adjusted to match the gas conditions of each of the zone groups 611-614. For example, the mixture supplied from FRC726 to the first main line 711 and / or the carrier gas supplied from the first MFC731 can be adjusted to satisfy the composition ratio (for the injection composition) specified in the first gas conditions for the first group 611 of zone (N).

[0110]

[0116] The first gas circuit 701 includes one or more flow ratio controllers (FRCs) 756 configured to supply one or more auxiliary reactive gases to each of the main lines 711-714. One or more auxiliary reactive gas sources 761-764 supply one or more reactive gases to the auxiliary FRC 756. A carrier gas source 765 is configured to supply an auxiliary carrier gas (e.g., an inert gas or a gas such as H2) to the auxiliary FRC 756. The gas(s) supplied from the auxiliary FRC 756 to one or more of the main lines 711-714 can be supplied simultaneously with the injection composition to satisfy the gas conditions of each zone group 611-614.

[0111]

[0117] In one or more embodiments, a plurality of processes performed using the controller 1070 include a pressure regulation process. The pressure regulation process includes exhausting a first precursor gas flow through a first exhaust valve 771 and a first back pressure control (BPC) device 781 with a first supply valve 791 closed. The first supply valve 791 is fluid-coupled to a first main line 711.

[0112]

[0118] The pressure regulation process includes exhausting the second precursor gas flow through the second exhaust valve 772 and the first back pressure control (BPC) device 782 with the second supply valve 792 closed. The second supply valve 792 is fluidly connected to the second main line 712. The first precursor gas flow and the second precursor gas flow each contain one or more reactive gases supplied from reactive gas sources 721-724.

[0113]

[0119] The pressure regulation process includes opening the first supply valve 791, opening the second supply valve 792, closing the first exhaust valve 771 after opening the first supply valve 791, and closing the second exhaust valve 772 after opening the second supply valve 792. The first gas circuit 701 includes a third exhaust valve 773 and a fourth exhaust valve 774 that function similarly to the first exhaust valve 771 and the second exhaust valve 772, and a third BPC device 783 and a fourth BPC device 784 that function similarly to the first BPC device 781 and the second BPC device 782. By discharging the precursor flow to one or more pump devices 197 before opening the supply valves, pressure fluctuations in the main lines 711-714 when the precursor flow mixes with the carrier gas in the main lines 711-714 can be reduced or eliminated.

[0114]

[0120] This disclosure assumes that in Figure 7, four main lines 711–7714 are each fluid-connected to a subset of four gas openings 186, and each subset is aligned with four groups 611–614 of multiple zones (N). This specification assumes various numbers of main lines, subsets of gas openings, and groups (N) of zones. For example, system 700 may include six (or more) main lines, which are fluid-connected to six (or more) subsets of gas openings 186, and each subset may be aligned with six (or more) groups of multiple zones (N). A different number of groups (e.g., two or five) may also be used to associate the zones (N).

[0115]

[0121] As shown in Figure 7, one or more main lines, one or more FRCs, one or more MFCs, one or more valves, and / or one or more BPCs are associated with groups 611-614 of zone (N). Zone groups 611-614 are associated and controlled to use the same gas conditions in each associated zone group 611-614.

[0116]

[0122] Figure 8 is a schematic partial diagram of a substrate processing system 700 in one mounting configuration. The system 700 includes a processing unit 100. The system 700 includes a second gas circuit 801. The second gas circuit 801 is configured to supply gas to four first side zones (N) of the first cross-flow section 403 of the processing chamber and to four second side zones (N) of the second cross-flow section 404 of the processing chamber. Twelve zones (N) of the injection section 401 are injection zones.

[0117]

[0123] The gas openings 186D and 186E are side gas openings and are offset by at least 20 degrees, for example, 45 degrees or more, 90 degrees or more, from the multiple gas openings 186A to 186C of the injection section 401 (as shown in Figure 4). Figure 4 shows that the side gas openings 186D and 186E are offset by an angle A3 from the multiple gas openings 186A to 186C of the injection section 401.

[0118]

[0124] System 700 includes a first side main line 811 fluid-connected to a first side subset of side gas openings 186D, 186E. The first side subset is aligned (e.g., radially aligned) with the first side group 805 of the side zone (N).

[0119]

[0125] System 700 includes a second side main line 812 fluid-connected to a second side subset of side gas openings 186D, 186E. The second side subset is aligned (e.g., radially aligned) with the second side group 806 of the side zone (N).

[0120]

[0126] System 700 includes a third side main line 813 fluid-connected to a third side subset of side gas openings 186D, 186E. The third side subset is aligned (e.g., radially aligned) with the third side group 807 of the side zone (N).

[0121]

[0127] System 700 includes a fourth side main line 814 fluid-connected to a fourth side subset of side gas openings 186D, 186E. The fourth side subset is aligned (e.g., radially aligned) with the fourth side group 808 of the side zone (N).

[0122]

[0128] The second gas circuit 801 includes one or more side FRCs 826 configured to supply one or more side reactive gases to each of the main lines 811-814. One or more side reactive gas sources 821-824 supply one or more side reactive gases to the side FRCs 826. A side carrier gas source 825 is configured to supply a side carrier gas (e.g., an inert gas or a gas such as H2) to the side FRCs 826. The side carrier gases and one or more side reactive gases mix to form a side mixture, which the side FRCs 826 distribute to the main lines 811-814.

[0123]

[0129] The second gas circuit 801 includes side MFCs 831-834 for each of the main lines 811-814. Each side MFC 831-834 is configured to supply each side carrier gas to each side main line 811-814. The side MFCs 831-834 may supply the same side carrier gas (e.g., hydrogen (H2)) to each side main line 811-814. For each side main line 811-814, the side carrier gas supplied from each side MFC 731-834 mixes with the side mixture from FRC 726 to form a side injection composition. The side injection composition is delivered through each side main line 811-814 to each side group 805-808 in the side zone corresponding to each side main line 811-814.

[0124]

[0130] Controller 1070 can control the processing of the second gas circuit 801 (such as the side FRC 826 and side MFCs 831-834). Using controller 1070, gas conditions can be specified for each of the side main lines 811-814 (and corresponding groups 805-808), resulting in four gas conditions being specified. The four side main lines 811-814 can simultaneously and independently supply one or more side reactive gases (from FRC 826), side carrier gases (from FRC 826), and one or more side carrier gases (from MFCs 831-834) to the side gas openings 186A-186C aligned with the zone. The gases are supplied simultaneously to subsets of the side gas openings 186A-186C under the specified gas conditions. The side FRC 826 and / or side MFC 831-834 can be used to independently control the gas flow supplied to each side group 805-808, thereby promoting a more uniform gas flow and more uniform deposition in the batch processing of the substrate 107. For example, the side FRC 826 and / or side MFC 831-834 can be adjusted to match the gas conditions of each of the zone groups 805-808. For example, the side mixture supplied from the side FRC 826 to the first side main line 811 and / or the side carrier gas supplied from the first side MFC 831 can be adjusted to satisfy the composition ratio (for the injection composition) specified in the first gas conditions for the first side group 805 of zone (N).

[0125]

[0131] The second gas circuit 801 may include one or more side auxiliary FRCs (e.g., similar to 756) and one or more side auxiliary reactive gas sources (e.g., similar to 761-764) used in conjunction with the side main lines 811-814.

[0126]

[0132] The second gas circuit 801 includes exhaust valves 871-874, BPC devices 881-884, and supply valves 891-894, which are configured to perform the pressure regulation processing associated with the second gas circuit 801.

[0127] The advantages of this disclosure include uniform gas flow and adjustability, uniform temperature and adjustability, independent control of zones (e.g., gas composition ratio concentration), reduced or eliminated pressure fluctuations in the supply line, increased throughput, efficient gas use, cost reduction, reduced processing time, increased chamber capacity, improved deposition growth rate, improved device performance, more continuous gas flow rate across the substrate, more uniform device performance across multiple substrates, more uniform and stable heat treatment across multiple substrates, and reduced dimensions and footprint (e.g., of the chamber). The advantages include uniform adjustability such as control and adjustment of process temperature, control and adjustment of gas parameters, and control and adjustment from the center to the edge of the substrate (e.g., deposition uniformity). Such advantages are realized, for example, in relatively complex processes where increased deposition uniformity from the center to the edge is required, and / or where multiple substrates need to be batched simultaneously.

[0128]

[0134] Improved device performance and modularity in applications are also advantages. For example, batch processing can be used to perform relatively complex epitaxial growth processes with a relatively small footprint, achieving relatively high throughput while maintaining or improving growth rate and device performance. These advantages of the present invention are facilitated by implementation of the present disclosure. For example, these advantages can be applied to inner substrates that are not the outermost substrates among multiple substrates supported in a cassette.

[0129]

[0135] The embodiments disclosed herein may be combined. For example, one or more features, embodiments, components, processes, and / or characteristics of the apparatus 100, method 500, system 700, first gas circuit 701, and / or second gas circuit 702 can be combined. It is also assumed that the aforementioned advantages can be achieved in any combination.

[0130]

[0136] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the following claims.

Claims

1. A method for relating each zone of a processing chamber having a processing space, Dividing the processing space into a plurality of zones along a first direction and a second direction of the processing space, wherein the second direction intersects with the first direction, and the plurality of zones are The first zone number (m), The second zone number (n) and Dividing into multiple zones, This involves determining the group number. To determine a first value associated with the first zone number (m) of the plurality of zones, and a second value associated with the second zone number (n) of the plurality of zones, Multiplying the first value by the second value. Including determining the group number, The grouping of the aforementioned multiple zones into multiple groups, wherein the number of the multiple groups is equal to the number of the group numbers, and Connecting one or more gas lines to each of the aforementioned groups, The same one or more gas lines are connected to each group, which is fluidly connected to a subset of the multiple zones grouped into each group. Methods that include...

2. Grouping the aforementioned multiple zones means that, for each zone, The method according to claim 1, comprising a first grouping step, the first grouping step comprising grouping each of the zones along the first direction with each of the other zones that are symmetrical with respect to one or more physical conditions.

3. Grouping the aforementioned multiple zones means that, for each zone, The method according to claim 2, comprising a second grouping step, wherein the second grouping step groups each of the zones along the second direction with each of the other zones that are symmetrical with respect to one or more physical conditions.

4. Before determining the aforementioned group number, Determining whether the first symmetry condition is satisfied with respect to the processing space along the first direction, Determining whether a first symmetry condition is satisfied, which includes determining whether a first plane symmetry along the first direction is satisfied, Determining whether the second symmetry condition is satisfied with respect to the processing space along the second direction, Determining whether a second symmetry condition is satisfied, including determining whether a second plane symmetry along the first direction is satisfied. The method according to claim 1, further comprising:

5. The method according to claim 4, wherein the second direction is perpendicular to the first direction.

6. If both the first and second plane symmetries are satisfied, Determining the first value is To obtain the first result, the first zone number (m) is divided by 2.0, If the result of the first step is not an integer, round it up to the nearest integer. Includes, Determining the second value is To obtain the second result, divide the second zone number (n) by 2.0, If the second result is not an integer, round it up to the nearest integer. The method according to claim 4, including the method described in claim 4.

7. If the second plane symmetry is satisfied but the first plane symmetry is not, the first value is equal to the first zone number (m), and the second value can be determined as follows: To obtain the result, the second zone number (n) is divided by 2.0, If the result is not an integer, round it up to the nearest integer. The method according to claim 4, including the method described in claim 4.

8. If the first plane symmetry is satisfied but the second plane symmetry is not, the second value is equal to the second zone number (n), and the first value can be determined. To obtain the result, the first zone number (m) is divided by 2.0, If the result is not an integer, round it up to the nearest integer. The method according to claim 4, including the method described in claim 4.

9. The method according to claim 1, comprising supplying one or more gases to each of the groups, wherein the one or more gases are supplied to subsets of the zones grouped into each group under the same gas conditions, the same gas conditions comprising one or more of the gas composition, pressure, or flow rate.

10. If the first plane symmetry is satisfied, the grouping of the plurality of zones is such that each of the zones having a first position (i) along the first direction and a second position (j) along the second direction, The method according to claim 4, further comprising a first grouping step, the first grouping step being to group each of the zones along the first direction with each of the other zones having the same second position (j) along the second direction and a first reference position along the first direction, wherein the first reference position is equal to the first zone number (m) minus the first position (i) plus 1.

11. If the second plane symmetry is satisfied, the grouping of the plurality of zones is such that for each zone having a first position (i) along the first direction and a second position (j) along the second direction, The method according to claim 10, further comprising a second grouping step, the second grouping step being to group each of the zones along the second direction with each of the other zones having the same first position (i) along the first direction and a second reference position along the second direction, wherein the second reference position is equal to the second zone number (n) minus the second position (j) plus 1.

12. The method according to claim 1, wherein the method is performed on the injection section of the processing chamber and repeated on the cross-flow section of the processing chamber.

13. The method according to claim 1, further comprising adjusting one or more flow ratio controllers (FRCs) or mass flow controllers (MFCs) associated with the group of the plurality of groups.

14. A device for processing substrates, A processing chamber having a processing space that includes multiple zones, One or more substrate supports arranged in the processing space, A plurality of gas openings formed in one or more side walls of the processing chamber, A flow guide structure, which is arranged in the processing space and divides the processing space into multiple zones, A first main line fluidly connected to a first group of the plurality of zones, and a first main line fluidly connected to a first subset of the plurality of zones grouped into the first group, and A second main line fluidly connected to a second group of the aforementioned multiple zones, the second main line fluidly connected to a second subset of the aforementioned multiple zones grouped into the second group. A device including a device.

15. The apparatus according to claim 14, wherein the first main line is configured to supply one or more gases to the first group of zones under first gas conditions, and the second main line is configured to supply one or more gases to the second group of zones under second gas conditions different from the first gas conditions.

16. A substrate processing system, A processing chamber having a processing space that includes multiple zones, One or more substrate supports arranged in the processing space, A plurality of gas openings formed in one or more side walls of the processing chamber, A first main line fluidly connected to a first subset of the plurality of gas openings, wherein the first subset is aligned with a first group of the plurality of zones, A second main line fluidly connected to a second subset of the plurality of gas openings, wherein the second subset is aligned with a second group of the plurality of zones, One or more flow ratio controllers (FRCs) configured to supply one or more reactive gases to the first main line and the second main line, a first mass flow controller (MFC) configured to supply a first carrier gas to the first main line, and A second MFC configured to supply a second carrier gas to the second main line. A system that includes this.

17. The controller further includes a controller having multiple instructions that, when executed, perform multiple processes, Specifying a first gas condition for the first group and a second gas condition for the second group, The first carrier gas is supplied to the first subset of the plurality of gas openings under the first gas conditions, and the second carrier gas is supplied to the second subset of the plurality of gas openings under the second gas conditions, simultaneously. The system according to claim 16, including the system described in claim 16.

18. The controller further includes a controller having multiple instructions that, when executed, perform multiple processes, Specifying a first gas condition for the first group and a second gas condition for the second group, One or more auxiliary reactive gases are supplied from one or more auxiliary FRCs to at least one of the first main line or the second main line. The system according to claim 16, including the system described in claim 16.

19. The controller further includes a controller having multiple instructions that, when executed, perform multiple processes, With the first supply valve closed, the first precursor gas flow is exhausted through the first exhaust valve and the first back pressure control (BPC) device, wherein the first supply valve is fluidly connected to the first main line, and the first precursor gas flow is exhausted. With the second supply valve closed, the second precursor gas flow is exhausted through the second exhaust valve and the second back pressure control (BPC) device, wherein the second supply valve is fluidly connected to the second main line, and the second precursor gas flow is exhausted such that the first precursor gas flow and the second precursor gas flow each contain the one or more reactive gases. Opening the first supply valve, Opening the second supply valve, Closing the first exhaust valve after opening the first supply valve, After opening the second supply valve, the second exhaust valve is closed. The system according to claim 16, including the system described in claim 16.

20. The plurality of zones are injection zones, the processing space includes a plurality of side zones, and the system is A plurality of side gas openings are formed in one or more side walls of the processing chamber and are offset by at least 20 degrees from the plurality of gas openings, A first side main line fluidly connected to a first side subset of the plurality of side gas openings, wherein the first side subset is aligned with a first side group of the plurality of side zones, A second side main line fluidly connected to a second side subset of the plurality of side gas openings, wherein the second side subset is aligned with the second side group of the plurality of side zones, One or more side FRCs are configured to supply one or more side reactive gases to the first side main line and the second side main line, A first side MFC is configured to supply a first side carrier gas to the first side main line, A second side MFC is configured to supply a second side carrier gas to the second side main line, and The system according to claim 16, further comprising:

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