Light-emitting chip, light-emitting substrate, backlight module, and display device

Abstract

This application provides a light-emitting chip, a light-emitting substrate, a backlight module, and a display device. The light-emitting chip includes a light-emitting layer, a polarization structure, an auxiliary structure, and a low refractive index layer. The light-emitting layer includes a first semiconductor layer, a second semiconductor layer, and a quantum well layer located between them. The polarization structure is located on the side of the second semiconductor layer away from the quantum well layer, emits first linearly polarized light from the light-emitting layer, and reflects second linearly polarized light, with the vibration directions of the first and second linearly polarized light being perpendicular. The auxiliary structure is located on the side of the polarization structure facing the light-emitting layer, and converts the second linearly polarized light reflected by the polarization structure into light that includes the first linearly polarized light and propagates to the polarization structure. The low refractive index layer is in direct contact with the second semiconductor layer, and the difference △n1 between the refractive index of the second semiconductor layer and the refractive index of the low refractive index layer satisfies 0.5 ≤ △n1 ≤ 1.0.

Description

[Technical Field]

[0001] This application relates to the field of display technology, and more particularly to light-emitting chips, light-emitting substrates, backlight modules, and display devices. [Background technology]

[0002] Mini-LEDs and Micro LEDs are new LED display technologies based on small-pitch LEDs, also known as sub-millimeter light-emitting diodes. They offer relatively good display quality and a lightweight design, along with advantages such as high contrast and a long lifespan, leading to a clear trend in their use in the display field. [Overview of the project] [Problems that the invention aims to solve]

[0003] This application provides a light-emitting chip, a light-emitting substrate, a backlight module, and a display device. [Means for solving the problem]

[0004] According to a first embodiment of the present invention, a light-emitting chip is provided. The light-emitting chip includes a light-emitting layer, a polarizing structure, an auxiliary structure, and a low refractive index layer. The light-emitting layer includes a first semiconductor layer, a second semiconductor layer, and a quantum well layer located between the first semiconductor layer and the second semiconductor layer. The polarization structure is located on the side of the second semiconductor layer away from the quantum well layer, and is arranged to emit a first linearly polarized light ray emitted from the light-emitting layer and reflect a second linearly polarized light ray emitted from the light-emitting layer, and the vibration direction of the first linearly polarized light ray and the vibration direction of the second linearly polarized light ray are perpendicular to each other. The auxiliary structure is located on the side of the polarization structure facing the light-emitting layer, and is arranged to convert the second linearly polarized light reflected by the polarization structure into a ray that includes the first linearly polarized light and propagates to the polarization structure. The low refractive index layer is located on the side of the second semiconductor layer away from the quantum well layer and is in direct contact with the second semiconductor layer, and the difference △n1 between the refractive index of the second semiconductor layer and the refractive index of the low refractive index layer satisfies 0.5 ≤ △n1 ≤ 1.0.

[0005] In one embodiment, the polarization structure includes a plurality of periodically arranged wire grids, the wire grids include a metal layer and an inorganic material layer located on the side of the metal layer away from the second semiconductor layer, the thickness of the inorganic material layer being greater than the thickness of the metal layer.

[0006] In one embodiment, the polarization structure includes a plurality of periodically arranged wire grids, the wire grids include a metal layer and an inorganic material layer located on the side of the metal layer facing the second semiconductor layer, the low refractive index layer is located between the second semiconductor layer and the polarization structure, and the thickness of the inorganic material layer is greater than the thickness of the low refractive index layer.

[0007] In one embodiment, the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 10 nm to 70 nm, the thickness range of the metal layer is 60 nm to 160 nm, the thickness range of the inorganic material layer is 120 nm to 200 nm, and the thickness range of the low refractive index layer is 0 nm to 40 nm or 120 nm to 180 nm.

[0008] In one embodiment, the polarization structure includes a plurality of periodically arranged wire grids, the wire grids include a metal layer, the low refractive index layer is located between the second semiconductor layer and the polarization structure, and the metal layer is in direct contact with the low refractive index layer.

[0009] In one embodiment, the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 10 nm to 70 nm, the thickness range of the metal layer is 60 nm to 160 nm, and the thickness range of the low refractive index layer is 0 nm to 40 nm or 120 nm to 180 nm.

[0010] In one embodiment, the polarization structure includes a plurality of periodically arranged wire grids, the low refractive index layer is located between the second semiconductor layer and the polarization structure, the light-emitting chip further includes an organic layer located on the side of the low refractive index layer away from the second semiconductor layer and in direct contact with the low refractive index layer, the organic layer includes at least an organic structure located between adjacent wire grids, and the difference in refractive index between the low refractive index layer and the organic layer is △n² ≤ 0.4.

[0011] In one embodiment, the wire grid comprises only a metal layer, and the metal layer is in direct contact with the low refractive index layer. The periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 40 nm to 60 nm, the thickness range of the metal layer is 70 nm to 90 nm, and the thickness range of the low refractive index layer is 10 nm to 30 nm or 170 nm to 200 nm.

[0012] In one embodiment, the polarization structure includes a plurality of periodically arranged wire grids, the wire grids include a metal layer and an inorganic material layer located on the side of the metal layer facing the second semiconductor layer, The low refractive index layer comprises a plurality of low refractive index structures, the low refractive index structures located between adjacent wire grids, the material of the low refractive index layer is an organic material, or the low refractive index layer is located between the inorganic material layer and the second semiconductor layer, and the light-emitting chip further comprises an organic layer located on the side of the low refractive index layer away from the second semiconductor layer and in direct contact with the low refractive index layer, the organic layer comprises an organic structure located between adjacent wire grids, or the organic layer comprises an organic structure located between adjacent wire grids and an organic material film layer located between the inorganic material layer and the low refractive index layer.

[0013] In one embodiment, the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 40 nm to 60 nm, the thickness range of the metal layer is 100 nm to 120 nm, and the spacing range between the surface of the inorganic material layer away from the second semiconductor layer and the surface of the low refractive index layer facing the second semiconductor layer is 170 nm to 200 nm.

[0014] In one embodiment, the light-emitting chip further includes a protective layer located on the side of the polarizing structure away from the light-emitting layer.

[0015] In one embodiment, the polarization structure includes a plurality of periodically arranged wire grids, The low refractive index layer is located between the light-emitting layer and the polarizing structure, and the light-emitting chip further includes an organic layer located on the side of the low refractive index layer away from the light-emitting layer and in direct contact with the low refractive index layer, the organic layer includes at least an organic structure located between adjacent wire grids, and the difference between the refractive index of the organic layer and the refractive index of the protective layer is △n3 ≤ 0.4, or, The low refractive index layer includes a low refractive index structure located between adjacent wire grids, the material of the low refractive index layer is an organic material, and the difference between the refractive index of the low refractive index layer and the refractive index of the protective layer is △n4 ≤ 0.4.

[0016] In one embodiment, the light-emitting chip further includes a reflective film layer, the reflective film layer surrounds the side of the light-emitting layer, or The light-emitting chip further includes a light-absorbing film layer, the light-absorbing film layer surrounding the side of the light-emitting layer, and the absorbing film layer is arranged to absorb light rays emitted from the side of the light-emitting layer.

[0017] In one embodiment, the auxiliary structure includes a reflective layer or a scattering reflective layer located on the side of the light-emitting layer away from the polarizing structure, or The auxiliary structure includes a reflective material layer located on the side of the light-emitting layer away from the polarizing structure, and a first polarizing film layer located between the polarizing structure and the reflective material layer, wherein the first polarizing film layer is arranged to deflect the phase of the light rays that pass through it by π / 2, or The auxiliary structure includes a second polarizing film layer located on the side of the light-emitting layer away from the polarizing structure, and the second polarizing film layer is arranged to reflect second linearly polarized light and convert it into first linearly polarized light.

[0018] According to a second embodiment of the present invention, a light-emitting substrate is provided, the light-emitting substrate comprising a drive circuit layer and a plurality of light-emitting chips, the drive circuit layer comprising a drive circuit for driving the light-emitting chips.

[0019] In one embodiment, the light-emitting substrate includes a light-emitting chip that emits a red light, a light-emitting chip that emits a green light, and a light-emitting chip that emits a blue light. The wavelength range of the light emitted from the light-emitting chip whose emission color is red is 640nm to 700nm, and the wavelength range of the light emitted from the light-emitting chip whose emission color is green is 500nm to 580nm, and the emission color is blue The wavelength range of the light emitted from the light-emitting chip is 430nm to 490nm.

[0020] In one embodiment, the light-emitting substrate further includes a light-absorbing structure located between adjacent light-emitting chips, or The light-emitting substrate further includes an absorption layer located on the light-emitting side of the light-emitting chip, and via holes are provided in the absorption layer, and the orthographic projection of the light-emitting layer of the light-emitting chip on the absorption layer overlaps with the via holes, or The light-emitting substrate further includes a reflective film layer located on the light-emitting side of the light-emitting chip, the reflective film layer is provided with an opening, and the orthographic projection of the light-emitting layer of the light-emitting chip on the reflective film layer coincides with the opening.

[0021] According to a third embodiment of the present invention, a backlight module including the above-mentioned light-emitting substrate is provided.

[0022] In one embodiment, the light-emitting chip is located on one side of the drive circuit layer, and the light-emitting side of the light-emitting chip is away from the drive circuit layer, or The backlight module includes a light guide plate located on one side of the drive circuit layer, and the light-emitting chip is located on the side of the light guide plate.

[0023] In one embodiment, the backlight module further includes a brightness-enhancing film located on the light-emitting side of the light-emitting chip.

[0024] According to a fourth embodiment of the present invention, a display device is provided, the display device including a liquid crystal display panel and the backlight module, or The display device includes a display panel, and the display panel is the light-emitting substrate.

[0025] In the light-emitting chip, light-emitting substrate, backlight module, and display device according to the embodiment of the present application, the first linearly polarized light in the light ray emitted from the light-emitting layer passes through the polarization structure and is emitted, the second linearly polarized light is reflected by the polarization structure, and the auxiliary structure converts the reflected second linearly polarized light into a light ray that includes the first linearly polarized light and propagates to the polarization structure, so that the first linearly polarized light in the light ray can pass through the polarization structure and be emitted. In this way, the light ray utilization rate of the light-emitting chip can be improved, and by setting the difference △n1 between the refractive index of the second semiconductor layer and the refractive index of the low refractive index layer to satisfy 0.5 ≤ △n1 ≤ 1.0, it is possible to improve the amount of light emitted from the light-emitting layer and further improve the light ray utilization rate of the light-emitting chip. [Brief explanation of the drawing]

[0026] [Figure 1] Figure 1 is a cross-sectional view of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 2] Figure 2 is a cross-sectional view of a light-emitting chip according to another exemplary embodiment of the present application. [Figure 3] Figure 3 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 4]Figure 4 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 5] Figure 5 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 6] Figure 6 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 7] Figure 7 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 8] Figure 8 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 9] Figure 9 is a cross-sectional view of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 10] Figure 10 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the period of the wire grid of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 11] Figure 11 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray in an exemplary embodiment of the present application. [Figure 12] Figure 12 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the metal layer of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 13] Figure 13 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray of a light-emitting chip according to another exemplary embodiment of the present application. [Figure 14] Figure 14 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the width of the wire grid of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 15] Figure 15 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 16] Figure 16 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the inorganic material layer of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 17]Figure 17 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 18] Figure 18 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the low refractive index layer of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 19] Figure 19 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 20] Figure 20 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the degree of polarization of the emitted light and the refractive index of the low refractive index layer of a light-emitting chip according to one exemplary embodiment of the present application. [Figure 21] Figure 21 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 22] Figure 22 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the period of the wire grid of a light-emitting chip according to another exemplary embodiment of the present application. [Figure 23] Figure 23 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 24] Figure 24 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the metal layer of a light-emitting chip according to another exemplary embodiment of the present invention. [Figure 25] Figure 25 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 26] Figure 26 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the metal layer of a light-emitting chip according to another exemplary embodiment of the present invention. [Figure 27] Figure 27 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray, according to yet another exemplary embodiment of the present application. [Figure 28] Figure 28 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the metal layer of a light-emitting chip according to another exemplary embodiment of the present invention. [Figure 29]Figure 29 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 30] Figure 30 shows the relationship between the transmittance of first linearly polarized light and the polarization degree of the emitted light and the thickness of the low refractive index layer of a light-emitting chip according to another exemplary embodiment of the present application. [Figure 31] Figure 31 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray of a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 32] Figure 32 is a curve diagram showing the relationship between the transmittance of first linearly polarized light and the degree of polarization of the emitted light and the refractive index of the low refractive index layer of a light-emitting chip according to another exemplary embodiment of the present application. [Figure 33] Figure 33 is a curve diagram showing the relationship between the transmittance of a first linearly polarized light and the wavelength of the light ray in a light-emitting chip according to yet another exemplary embodiment of the present application. [Figure 34] Figure 34 is a schematic diagram of the structure of a backlight module according to one exemplary embodiment of the present application. [Figure 35] Figure 35 is a schematic diagram of the structure of a backlight module according to another exemplary embodiment of the present invention. [Figure 36] Figure 36 is a schematic diagram of the structure of a display device according to one exemplary embodiment of the present application. [Figure 37] Figure 37 is a schematic diagram of the structure of a display device according to another exemplary embodiment of the present invention. [Figure 38] Figure 38 is a cross-sectional view of a light-emitting chip according to another exemplary embodiment of the present application. [Figure 39] Figure 39 is a schematic diagram of the structure of a light-emitting substrate according to one exemplary embodiment of the present application. [Figure 40] Figure 40 is a schematic diagram of the structure of a light-emitting substrate according to one exemplary embodiment of the present application. [Figure 41] Figure 41 is a schematic diagram of the structure of a light-emitting substrate according to one exemplary embodiment of the present application. [Modes for carrying out the invention]

[0027] Here, exemplary embodiments are described in detail, and these examples are shown in the drawings. Where the following description relates to the drawings, unless otherwise specified, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are merely examples of apparatus and methods consistent with some aspects of the present application, which are detailed in the appended claims.

[0028] The terms used herein are for the purpose of describing specific embodiments and are not intended to limit this application. The singular forms “one kind,” “the said,” and “the said” used herein and in the appended claims are also intended to include the plural form unless the context clearly indicates otherwise. For the purposes of this specification, the term “and / or” means any or all possible combination of one or more related items listed.

[0029] It should be understood that while this application may use terms such as 1st, 2nd, 3rd to describe various types of information, this information should not be limited to these terms. These terms are used solely to distinguish information of the same type from one another. For example, without departing from the scope of this application, 1st information may be called 2nd information, and similarly, 2nd information may be called 1st information. Depending on the context, the term "if...then" as used herein may be interpreted as "in the case of..." or "when..." or "in response to deciding that...".

[0030] Embodiments of the present application provide a light-emitting chip, a light-emitting substrate, a backlight module, and a display device. The light-emitting chip, light-emitting substrate, backlight module, and display device of the present application will be described in detail below with reference to the drawings. Where there is no contradiction, the features of the following embodiments can be complemented or combined with each other.

[0031] The embodiments of the present invention provide a light-emitting chip. As shown in Figures 1 to 3, the light-emitting chip includes a light-emitting layer 10, a polarizing structure 20, an auxiliary structure 30, and a low refractive index layer 40.

[0032] The light-emitting layer 10 includes a first semiconductor layer 11, a second semiconductor layer 12, and a quantum well layer 13 located between the first semiconductor layer 11 and the second semiconductor layer 12. The polarization structure 20 is located on the side of the second semiconductor layer 12 away from the quantum well layer 13, and is arranged to emit a first linearly polarized light ray from the light-emitting layer 10 and reflect a second linearly polarized light ray from the light-emitting layer 10, with the vibration direction of the first linearly polarized light ray and the vibration direction of the second linearly polarized light ray being perpendicular. The auxiliary structure 30 is located on the side of the polarization structure 20 facing the light-emitting layer 10, and is arranged to convert the second linearly polarized light reflected by the polarization structure 20 into a light ray that includes the first linearly polarized light ray and propagates to the polarization structure 20. The low refractive index layer 40 is located on the side of the second semiconductor layer away from the quantum well layer and is in direct contact with the second semiconductor layer. The refractive index of the low refractive index layer 40 is smaller than the refractive index of the second semiconductor layer 12. The difference △n1 between the refractive index of the second semiconductor layer 12 and the refractive index of the low refractive index layer 40 satisfies 0.5 ≤ △n1 ≤ 1.0.

[0033] In the light-emitting chip according to the embodiment of the present application, the first linearly polarized light in the light ray emitted from the light-emitting layer passes through the polarization structure and is emitted, the second linearly polarized light is reflected by the polarization structure, and the auxiliary structure converts the reflected second linearly polarized light into a light ray that includes the first linearly polarized light and propagates to the polarization structure, so that the first linearly polarized light in the light ray can pass through the polarization structure and be emitted. In this way, the light utilization rate of the light-emitting chip can be improved, and by setting the difference △n1 between the refractive index of the second semiconductor layer and the refractive index of the low refractive index layer to satisfy 0.5 ≤ △n1 ≤ 1.0, it is possible to improve the amount of light emitted from the light-emitting layer and further improve the light utilization rate of the light-emitting chip.

[0034] In one embodiment, as shown in Figures 1 to 3, the light-emitting chip further includes a base substrate 50 located on the side of the light-emitting layer 10 away from the polarizing structure 20, and the light-emitting layer 10 is formed on the base substrate 50. The material of the base substrate 50 may include glass, sapphire, PET (polyethylene terephthalate), PC (polycarbonate), etc., and may also include an organic resin material such as epoxy resin, triazine, silicone resin, or polyimide. In some exemplary embodiments, the base substrate may be an FR4 type printed circuit board (PCB) or a flexible PCB that is easily deformable. In some exemplary embodiments, the base substrate may include a ceramic material such as silicon nitride, AlN, or Al2O3, or a metal or metal compound, and the base substrate may be, for example, a metal core printed circuit board (MCPCB) or a metal-copper clad laminate (MCCL).

[0035] In one embodiment, in the light-emitting layer 10, one of the first semiconductor layer 11 and the second semiconductor layer 12 is an N-type semiconductor layer, and the other is a P-type semiconductor layer. For example, the first semiconductor layer 11 is a P-type semiconductor layer, and the second semiconductor layer 12 is an N-type semiconductor layer.

[0036] In one embodiment, the auxiliary structure 30 includes a reflective material layer located on the side of the light-emitting layer 10 away from the polarizing structure 20, and a first polarizing film layer located between the polarizing structure 20 and the reflective material layer, wherein the first polarizing film layer is arranged to deflect the phase of the light rays that pass through it by π / 2. With this configuration, the second linearly polarized light reflected by the polarizing structure 20 has its phase deflected by π / 2 after passing through the first polarizing film layer, is then reflected by the reflective material layer, passes through the first polarizing film layer again, has its phase deflected by π / 2 again, that is, is converted into the first linearly polarized light that propagates to the polarizing structure, and is emitted after passing through the polarizing structure 20. In this way, the light rays reflected by the polarizing structure are basically all converted into the first linearly polarized light and emitted by the action of the first polarizing film layer and the reflective material layer, thus avoiding light ray loss due to the light rays passing through the light-emitting layer and the low refractive index layer multiple times. The first polarizing film layer may be a quarter-wave plate structure. The transmittance of the first polarizing film layer may be greater than 90%. The reflective material layer may be a metallic reflective layer, for example, an Ag film layer with a thickness of about 100 nm, or the reflective material layer may consist of multiple film layers, for example, the reflective material layer may be a dispersed Bragg mirror.

[0037] In some embodiments, as shown in Figures 1 to 3, the first polarizing film layer 31 is located on the side of the light-emitting layer 10 away from the polarizing structure 20, and the reflective material layer 32 is located on the side of the first polarizing film layer 31 away from the light-emitting layer 10. Specifically, the first polarizing film layer 31 is located on the side of the base substrate 50 away from the polarizing structure 20. In other embodiments, the first polarizing film layer 31 may be located between the low refractive index layer 40 and the second semiconductor layer 12.

[0038] In another embodiment, the auxiliary structure 30 includes a reflective layer located on the side of the light-emitting layer 10 away from the polarizing structure 20. The reflective layer reflects second linearly polarized light, and as the second linearly polarized light passes through the light-emitting layer 10, at least some of the light rays are depolarized by the film layer of the light-emitting layer 10 to become natural light. The first linearly polarized light in the natural light passes through the polarizing structure 20 and is emitted, and the second linearly polarized light is reflected by the polarizing structure 20 and incident on the reflective layer, and the above process is repeated again. The reflective layer may be a metallic reflective layer, for example, an Ag film layer with a thickness of about 100 nm, or the reflective layer may include a plurality of film layers, for example, the reflective layer is a dispersed Bragg mirror.

[0039] In yet another embodiment, the auxiliary structure 30 includes a scattering reflection layer located on the side of the light-emitting layer 10 away from the polarizing structure 20. The second linearly polarized light reflected by the polarizing structure 20 is scattered at the surface of the scattering reflection layer, converted into natural light, and reflected. The first linearly polarized light in natural light passes through the polarizing structure 20 and is emitted. The second linearly polarized light in natural light is reflected by the polarizing structure 20 and incident on the scattering reflection layer, and the above process is repeated again.

[0040] In yet another embodiment, the auxiliary structure 30 includes a second polarizing film layer located on the side of the light-emitting layer 10 away from the polarizing structure 20, wherein the second polarizing film layer is arranged to reflect second linearly polarized light and convert it to first linearly polarized light. That is, the second polarizing film layer integrates two actions: reflection and polarization rotation. In this way, light rays reflected by the polarizing structure are essentially all converted to first linearly polarized light by the action of the second polarizing film layer and emitted, thus avoiding light loss due to the light rays passing through the light-emitting layer and the low refractive index layer multiple times.

[0041] In one embodiment, as shown in Figures 1 to 3, the polarization structure includes a plurality of periodically arranged wire grids 21, and the wire grids 21 include at least a metal layer 211. In the embodiment shown in Figures 1 and 3, the wire grid 21 includes a metal layer 211 and an inorganic material layer 212 located on one side of the metal layer 211. In the embodiment shown in Figure 1, the inorganic material layer 212 is a second semiconductor layer 12 of the metal layer 211. The side moving awayIn the embodiment shown in Figure 3, the inorganic material layer 212 is located on the second semiconductor layer 12 of the metal layer 211. The side facing It is located at [location]. In the embodiment shown in Figure 2, the wire grid 21 includes only the metal layer 211.

[0042] In one embodiment, the material of the metal layer 211 may be aluminum, and the material of the inorganic material layer 212 may be silicon dioxide. In this way, the polarized structure has high transmittance and low absorptance for first linearly polarized light.

[0043] In one embodiment, as shown in Figures 1 and 2, the low refractive index layer 40 is located between the second semiconductor layer 12 and the polarizing structure 20, and the metal layer 211 of the wire grid 21 is in direct contact with the low refractive index layer 40.

[0044] In one embodiment, as shown in Figures 3 to 6, the light-emitting chip further includes a protective layer 90 located on the side of the polarizing structure 20 away from the light-emitting layer 10. The protective layer 90 can protect the polarizing structure 20.

[0045] In one embodiment, the material of the protective layer 90 is glass, sapphire, PET, PC, etc. In this way, the light transmittance of the protective layer 90 can be increased, reducing the influence on the emitted light rays, and the hardness of the protective layer 90 can be increased, improving the pressure resistance and collision prevention ability of the light-emitting chip, and providing a better protective effect on the underlying film layer.

[0046] In one embodiment, the polarizing structure 20 may be formed on the protective layer 90, and the polarizing structure 20 will be in close contact with the light-emitting layer 10.

[0047] In one embodiment, as shown in Figures 3 to 6, the light-emitting chip further includes an organic layer 80, the organic layer 80 including at least an organic structure 81 located between adjacent wire grids 21. The polarizing structure 20 is integrally bonded to the film layer below it via the organic layer 80. The material of the organic layer 80 may be, for example, an organic resin. In the embodiment shown in Figure 3, the organic layer 80 includes an organic structure 81 located between adjacent wire grids 21 and an organic material film layer 82 located between the wire grids 21 and the low refractive index layer 40. In the embodiments shown in Figures 4 and 6, the organic layer 80 includes only the organic structure 81 located between adjacent wire grids 21.

[0048] In one embodiment, as shown in Figures 3, 4, and 6, the low refractive index layer 40 is located between the second semiconductor layer 12 and the polarization structure 20, the organic layer 80 is located on the side of the low refractive index layer 40 away from the second semiconductor layer 12, and the difference in refractive index between the low refractive index layer 40 and the organic layer 80 is △n2 ≤ 0.4. By setting it in this way, it contributes to improving the amount of light emitted from the light-emitting layer and further improves the light utilization rate of the light-emitting chip.

[0049] Furthermore, the difference between the refractive index of the organic layer 80 and the refractive index of the protective layer 90 is △n3 ≤ 0.4. In this way, the amount of light emitted from the light-emitting layer can be further improved, and the light utilization rate of the light-emitting chip can be further improved.

[0050] In one embodiment, as shown in Figure 5, the wire grid 21 is in direct contact with the second semiconductor layer 12, the low refractive index layer 40 includes a plurality of low refractive index structures 41, the low refractive index structures 41 are located between adjacent wire grids 21, the material of the low refractive index layer 40 is an organic material, and the difference between the refractive index of the low refractive index layer 40 and the refractive index of the protective layer 90 is △n4 ≤ 0.4. By setting it in this way, it contributes to improving the amount of light emitted from the light-emitting layer and further improves the light utilization rate of the light-emitting chip. In this embodiment, the organic structure 81 of the organic layer 80 is a low refractive index structure 41.

[0051] Furthermore, the difference between the refractive index of the low refractive index layer 40 and the refractive index of the protective layer 90 is △n4 ≤ 0.4. In this way, the amount of light emitted from the light-emitting layer can be further improved, and the light utilization rate of the light-emitting chip can be further improved.

[0052] In one embodiment, the process for forming the polarizing structure 20 may be as follows in the embodiment shown in Figures 1 to 6.

[0053] First, a metal film layer and an inorganic material film layer located on the metal film layer are deposited in sequence. In the embodiments shown in Figures 1 and 2, the metal film layer is formed in the low refractive index layer 40. In the embodiments shown in Figures 3 to 6, the metal film layer is formed in the protective layer 90.

[0054] Next, a patterned mask layer is formed on the inorganic material film layer.

[0055] A patterned mask layer can be obtained by applying an imprint resist film layer, then imprinting it with a hard template or soft template to pattern the imprint resist film layer, and then curing the patterned imprint resist film layer. For example, the imprint resist film layer can be cured by ultraviolet light irradiation.

[0056] Next, using the patterned mask layer as a shield, the inorganic material film layer is etched to obtain multiple inorganic material layers arranged at intervals.

[0057] Next, using the patterned mask layer and inorganic material layer as shielding, the metal film layer is etched to obtain multiple metal layers arranged at intervals.

[0058] Next, the mask layer is removed to obtain a wire grid containing an inorganic material layer and a metal layer. Alternatively, both the mask layer and the inorganic material layer are removed to obtain a wire grid containing only a metal layer. In this way, a polarizing structure containing multiple wire grids is obtained.

[0059] In one embodiment, as shown in Figures 7 to 9, the light-emitting chip further includes a first electrode 71 and a second electrode 72, the first electrode 71 being electrically connected to a first semiconductor layer 11 and the second electrode 72 being electrically connected to a second semiconductor layer 12. In the embodiment shown in Figure 7, the light-emitting chip is a surface-mount chip, and both the first electrode 71 and the second electrode 72 are located on the side of the first semiconductor layer 11 facing the second semiconductor layer 12. In the embodiment shown in Figure 8, the light-emitting chip is a flip-chip, and both the first electrode 71 and the second electrode 72 are located on the side of the second semiconductor layer 12 away from the first semiconductor layer 11. In the embodiment shown in Figure 9, the light-emitting chip is a vertical chip, the first electrode 71 is located on the side of the first semiconductor layer 11 away from the second semiconductor layer 12 and the second electrode 72 is located on the side of the second semiconductor layer 12 away from the first semiconductor layer 11.

[0060] In one embodiment, As shown in Figure 38, If the wire grid 21 includes a metal layer 211 and an inorganic material layer 212 located on the side of the metal layer 211 facing the second semiconductor layer 12, the thickness of the inorganic material layer 212 is greater than the thickness of the metal layer 211. Setting the thickness of the inorganic material layer 212 to be greater than the thickness of the metal layer 211 contributes to improving the transmittance of the polarization structure for first linearly polarized light and improving the degree of polarization of light rays that have passed through the polarization structure. The degree of polarization can be calculated using the following formula.

[0061]

number

[0062] In the formula, PE is the degree of polarization, and T TM is the transmittance of the first linearly polarized light, and T TE is the transmittance of second-linearly polarized light, and Tr is the transmittance of natural light, that is, the proportion of emitted light that accounts for the total amount of light.

[0063] In one embodiment, as shown in Figure 1, the wire grid 21 includes a metal layer 211 and an inorganic material layer 212 located on the side of the metal layer 211 away from the second semiconductor layer 12, the low refractive index layer 40 is located between the second semiconductor layer 12 and the polarizing structure 20, and the thickness of the inorganic material layer 212 is greater than the thickness of the low refractive index layer 40. This configuration contributes to improving the transmittance of the polarizing structure to first linearly polarized light and improving the degree of polarization of light rays that have passed through the polarizing structure.

[0064] To improve the transmittance of the light-emitting chip for first linear polarization and the polarization degree of the emitted light, embodiments of the present invention simulate the parameters of several film layers of the light-emitting chip shown in Figures 1 and 2. The structure used in the simulation includes a second semiconductor layer, a planar light source placed within the second semiconductor layer, a low refractive index layer located on one side of the second semiconductor layer, and a polarization structure. The low refractive index layer is located between the polarization structure and the second semiconductor layer, and the polarization structure includes a plurality of periodically arranged wire grids. The wire grids include a metal layer and an inorganic material layer. The material of the metal layer is aluminum, and the material of the inorganic material layer is SiO2, with a refractive index of SiO2 of 1.5. The parameters that can be optimized include the period and line width of the wire grid, the thickness of the metal layer, the thickness of the inorganic material layer, and the thickness and refractive index of the low refractive index layer. The optimization process of some of the above parameters will be described in detail below.

[0065] The process for optimizing the wire grid period is as follows: The thickness of the metal layer is 100 nm, the thickness of the inorganic material layer is 180 nm, the low refractive index layer is not considered, and the width w of the wire grid is set to half the period p of the wire grid. The wire grid period takes multiple values ​​in the range of 10 nm to 300 nm, with a difference of 10 nm between two adjacent periods. Each value is simulated to obtain the curve diagrams shown in Figures 10 and 11. Figure 10 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the period of the wire grid. In Figure 10, the wavelength of the light is 460 nm, and curve a1 is the transmittance T of the first linearly polarized light. TMIt is a relationship curve between the polarization degree PE of the outgoing light beam and the period p of the wire grid, and curve a2 is a relationship curve between the polarization degree PE of the outgoing light beam and the period p of the wire grid. FIG. 11 is a relationship curve diagram between the transmittance of the first linearly polarized light and the wavelength of the light beam. Curve a3 in FIG. 11 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 10 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a4 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 50 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a5 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 100 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a6 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 120 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a7 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 160 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a8 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 200 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a9 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 250 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam, and curve a10 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 300 nm TM It is a relationship curve between the transmittance T of the first linearly polarized light and the wavelength of the light beam

[0066] As can be seen from FIG. 10, when the period p is within the range of 20 nm to 290 nm, PE is all greater than 50%. The smaller the period p, the greater T TM is greater, and PE is also greater. When the period p is less than 210 nm, T TM reaches 80% or more, and the polarization degree is 98.03%. When the period p is less than 90 nm, T TM reaches 90% or more, and PE reaches 99.96%. When the period p is 40 nm, T TM is as high as 92%, and PE is as high as 99.998%. On the premise of considering that the process is processable and mass production is possible stably, a smaller period can be selected, whereby TTM Both and PE are increased. As can be seen from Figure 11, when the value of period p is fixed, T TM The change is not noticeable in response to changes in the wavelength of light, and as can be seen from that, T TM It is not sensitive to the wavelength of light, and the color gamut of the light-emitting chip does not experience color shift or distortion due to the setting of the polarization structure.

[0067] Considering Figures 10 and 11 comprehensively, it is determined that the period range of the wire grid is 40 nm to 200 nm, and the optimal value for the period of the wire grid is 120 nm.

[0068] The process for optimizing the thickness of the metal layer is as follows: The period p of the wire grid is set to 120 nm, the width of the wire grid to 60 nm, and the thickness of the inorganic material layer to 60 nm, excluding the low refractive index layer. The thickness of the metal layer is taken from multiple values ​​within the range of 20 nm to 200 nm, with a difference of 10 nm between the thicknesses of two adjacent metal layers. Each value is simulated to obtain the curve diagrams shown in Figures 12 and 13. Figure 12 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the thickness of the metal layer. In Figure 12, the wavelength of the light is 460 nm, and curve b1 represents the transmittance T of the first linearly polarized light. TM The first curve shows the relationship between the degree of polarization PE of the emitted light and the thickness h1 of the metal layer, and the second curve shows the relationship between the degree of polarization PE of the emitted light and the thickness h1 of the metal layer. Figure 13 is a diagram of the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. 13 The curve b3 in the diagram represents the transmittance T of the first linearly polarized light when the thickness h1 of the metal layer is equal to 0 nm. TM This is a relationship curve between the wavelength of light and the element, where curve b4 represents the transmittance T of first linearly polarized light when the thickness h1 of the metal layer is equal to 50 nm. TM This is a relationship curve between the wavelength of light and the element, where curve b5 represents the transmittance T of first linearly polarized light when the thickness h1 of the metal layer is equal to 110 nm. TM This is a relationship curve between the wavelength of light and the element, where curve b6 represents the transmittance T of first linearly polarized light when the thickness h1 of the metal layer is equal to 150 nm. TMThis is a relationship curve between the wavelength of light and the element, where curve b7 is the transmittance T of the first linearly polarized light when the thickness h1 of the metal layer is equal to 200 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0069] As can be seen from Figures 12 and 13, when the wavelength of the light is 460 nm, T TM This changes in accordance with the change in the thickness h1 of the metal layer, and when the thickness h1 of the metal layer is 110 nm, T TM It reaches a maximum of about 70%, and if the thickness h1 of the metal layer is too large or too small, T TM It decreased, T TM The minimum value is close to 40%. TM When it reaches its maximum value, PE is 99.8%, and when the thickness h1 of the metal layer is greater than 80 nm, PE is always 99% or more, and when the thickness of the metal layer is a fixed value, T changes depending on the wavelength of the light. TM The changes are not noticeable.

[0070] Considering Figures 12 and 13 comprehensively, it is determined that the range of the metal layer thickness h1 is 60 nm to 160 nm, and the optimal value for the metal layer thickness h1 is 110 nm.

[0071] The process for optimizing the wire grid width is as follows: The metal layer thickness is 110 nm, the inorganic material layer thickness is 60 nm, the wire grid period p is 120 nm, and the low refractive index layer is not considered. The wire grid width w takes multiple values ​​within the range of 0 nm to 120 nm, with a difference of 10 nm between two adjacent widths. Each value is simulated to obtain the curve diagrams shown in Figures 14 and 15. Figure 14 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the wire grid width. The wavelength of the light in Figure 14 is 460 nm, and curve c1 represents the transmittance T of the first linearly polarized light. TMThe first curve shows the relationship between the polarity of the emitted light PE and the width of the wire grid w, and the second curve shows the relationship between the polarization degree of the emitted light PE and the width of the wire grid w. Figure 15 is a diagram of the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. In Figure 15, curve c3 is the transmittance of the first linearly polarized light T when the width of the wire grid w is equal to 10 nm. TM This is a relationship curve between the wavelength of light and the signal strength, where curve c4 represents the transmittance T of first linearly polarized light when the wire grid width w is equal to 40 nm. TM This is a relationship curve between the wavelength of light and the signal strength, where curve c5 represents the transmittance T of first linearly polarized light when the wire grid width w is equal to 70 nm. TM This is a relationship curve between the wavelength of light and the signal strength, where curve a6 represents the transmittance T of first linearly polarized light when the width w of the wire grid is equal to 100 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0072] As can be seen from Figure 14, when the wire grid width w is less than 40 nm, T increases in proportion to the increase in the wire grid width w. TM It becomes larger, and if the wire grid width w is 40 nm, T TM It reaches a maximum of 86.89%, and when the wire grid width w is greater than 40 nm, T increases in proportion to the increase in the wire grid width w. TM When the width w of the wire grid is close to the period of the wire grid, T TM When the wire grid width w is 40 nm or more, PE reaches 98.7% or more, and when the wire grid width w is less than 40 nm, PE decreases in proportion to the decrease in wire grid width w. As can be seen from Figure 15, when the wire grid width is a fixed value, T TM The change is not noticeable in response to changes in the wavelength of light.

[0073] Considering Figures 14 and 15 comprehensively, it is determined that the width range of the wire grid is 10 nm to 70 nm, and the optimal value for the wire grid width is 40 nm.

[0074] The process for optimizing the thickness of the inorganic material layer is as follows: The metal layer thickness is 110 nm, the wire grid width w is 40 nm (both the metal layer and the inorganic material layer widths are 40 nm), the wire grid period p is 120 nm, and the low refractive index layer is not considered. The inorganic material layer thickness h2 takes multiple values ​​within the range of 0 nm to 200 nm, with a difference of 20 nm between two adjacent thicknesses. Each value is simulated to obtain the curve diagrams shown in Figures 16 and 17. Figure 16 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the thickness of the inorganic material layer. In Figure 16, the wavelength of the light is 460 nm, and curve d1 represents the transmittance T of the first linearly polarized light. TM The curve d2 represents the relationship between the polarization degree PE of the emitted light and the thickness h2 of the inorganic material layer. Figure 17 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. In Figure 17, curve d3 represents the transmittance T of the first linearly polarized light when the thickness h2 of the inorganic material layer is equal to 0 nm. TM This is a relationship curve between the wavelength of light and the material, where curve d4 represents the transmittance T of first linearly polarized light when the thickness h2 of the inorganic material layer is equal to 40 nm. TM This is a relationship curve between the wavelength of light and the material, where curve d5 is the transmittance T of first linearly polarized light when the thickness h2 of the inorganic material layer is equal to 80 nm. TM This is a relationship curve between the wavelength of light and the element, where curve d6 represents the transmittance T of first linearly polarized light when the thickness h2 of the inorganic material layer is equal to 120 nm. TM This is a relationship curve between the wavelength of light and the element, where curve d7 is the transmittance T of first linearly polarized light when the thickness h2 of the inorganic material layer is equal to 160 nm. TM This is a relationship curve between the wavelength of light and the element, where curve d8 represents the transmittance T of first linearly polarized light when the thickness h2 of the inorganic material layer is equal to 200 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0075] As can be seen in Figure 16, the thickness h2 of the inorganic material layer is in the range of 0 nm to 200 nm, and T changes depending on the change in the thickness h2 of the inorganic material layer. TMThese remain essentially unchanged, all below 85%, and the change in PE is also not significant, basically between 98.8% and 99.2%. When the thickness h2 of the inorganic material layer is 0 nm, i.e., when the wire grid does not contain an inorganic material layer, T TM If the percentage is 88.5% and PE is 99.1%, and the thickness h2 of the inorganic material layer is 200 nm, then T TM The percentage is 88.4% for PE and 99.1% for PE. That is, in the two cases where the wire grid does not contain an inorganic material layer and where the thickness h2 of the inorganic material layer is 200 nm, T TM The difference is small, and PE is the same. As can be seen from Figure 17, when the thickness h2 of the inorganic material layer is fixed, T TM The change is not noticeable in response to changes in the wavelength of light.

[0076] Considering Figures 16 and 17 comprehensively, it is determined that when the wire grid does not include an inorganic material layer, or when the wire grid includes an inorganic material layer, the thickness range of the inorganic material layer is 120 nm to 200 nm, and the optimal value for the thickness of the inorganic material layer is 200 nm.

[0077] The process for optimizing the thickness of the low refractive index layer is as follows: The metal layer thickness is set to 110 nm, the inorganic material layer thickness to 200 nm, the wire grid width to 40 nm (both the metal and inorganic material layers are 40 nm wide), the wire grid period to 120 nm, and the refractive index of the low refractive index layer to 1.5. The thickness h3 of the low refractive index layer takes multiple values ​​within the range of 0 nm to 200 nm, with a difference of 10 nm between two adjacent thicknesses. Each value is simulated to obtain the curve diagrams shown in Figures 18 and 19. Figure 18 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the thickness of the low refractive index layer. In Figure 18, the wavelength of the light is 460 nm, and curve e1 represents the transmittance T of the first linearly polarized light. TMThe first curve shows the relationship between the polarization degree PE of the emitted light and the thickness h3 of the low refractive index layer, and the second curve shows the relationship between the polarization degree PE of the emitted light and the thickness h3 of the low refractive index layer. Figure 19 is a diagram of the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. In Figure 19, the third curve shows the transmittance T of the first linearly polarized light when the thickness h3 of the low refractive index layer is equal to 0 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve e4 is the transmittance T of first linearly polarized light when the thickness h3 of the low refractive index layer is equal to 10 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve e5 is the transmittance T of first linearly polarized light when the thickness h3 of the low refractive index layer is equal to 70 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve e6 is the transmittance T of first linearly polarized light when the thickness h3 of the low refractive index layer is equal to 150 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve e7 is the transmittance T of first linearly polarized light when the thickness h3 of the low refractive index layer is equal to 200 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve e8 is the transmittance T of first linearly polarized light when the thickness h3 of the low refractive index layer is equal to 110 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0078] As can be seen from Figure 18, when the thickness h3 of the low refractive index layer is 0, that is, when the light-emitting chip does not include a low refractive index layer, T TM It is 90%, and if the light-emitting chip includes a low refractive index layer, T TM T changes nonlinearly in response to changes in the thickness h3 of the low refractive index layer, and when the thickness h3 of the low refractive index layer is 10 nm and 150 nm, TM In all cases, the maximum value reaches approximately 93%, and the range of change in PE is not large in response to the change in the thickness h3 of the low refractive index layer, and in all cases it is approximately 99%. As can be seen from Figure 19, when the light-emitting chip does not include a low refractive index layer, and when the light-emitting chip includes a low refractive index layer and the thickness of the low refractive index layer is fixed, T TM The value of the low refractive index layer thickness h3 does not change significantly in response to changes in the wavelength of the light ray, and the value of the low refractive index layer thickness h3 can be determined based on the wavelength of the light ray emitted from the light-emitting chip. In the blue light wavelength band, when the low refractive index layer thickness h3 is 10 nm and 150 nm, T TMBoth are around 90%, and PE is around 99%.

[0079] Considering Figures 18 and 19 comprehensively, it is determined that the range of the thickness h3 of the low refractive index layer is 0 nm to 40 nm or 120 nm to 180 nm, and that the optimal value for the thickness h3 of the low refractive index layer is 10 nm or 150 nm.

[0080] The process for optimizing the refractive index of the low refractive index layer is as follows: The thickness of the metal layer is set to 110 nm, the thickness of the inorganic material layer to 200 nm, the width of the wire grid to 40 nm (both the metal and inorganic material layers are 40 nm wide), the period of the wire grid to 120 nm, the refractive index of the second semiconductor layer to 2.4, and the thickness of the low refractive index layer to 150 nm. The refractive index n of the low refractive index layer takes on multiple values ​​within the range of 1.4 to 2.4, with a difference of 0.1 between adjacent refractive indices. Each value is simulated to obtain the curve diagrams shown in Figures 20 and 21. Figure 20 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the refractive index of the low refractive index layer. In Figure 20, the wavelength of the light is 460 nm, and curve f1 represents the transmittance T of the first linearly polarized light. TM The first curve shows the relationship between the refractive index n of the low refractive index layer and the polarity PE of the emitted light ray. The second curve shows the relationship between the polarity PE of the emitted light ray and the refractive index n of the low refractive index layer. Figure 21 is a diagram of the relationship between the transmittance of the first linearly polarized light ray and the wavelength of the light ray. In Figure 21, the curve f3 is the transmittance T of the first linearly polarized light ray when the refractive index n of the low refractive index layer is equal to 1.5. TM This is a relationship curve between the refractive index and the wavelength of light, where curve f4 is the transmittance T of the first linearly polarized light when the refractive index n of the low refractive index layer is equal to 1.7. TM This is a relationship curve between the refractive index and the wavelength of light, where curve f5 is the transmittance T of the first linearly polarized light when the refractive index n of the low refractive index layer is equal to 1.9. TM This is a relationship curve between the refractive index and the wavelength of light, where curve f6 is the transmittance T of the first linearly polarized light when the refractive index n of the low refractive index layer is equal to 2.2. TM This is a relationship curve between the refractive index and the wavelength of light, where curve f7 is the transmittance T of the first linearly polarized light when the refractive index n of the low refractive index layer is equal to 2.4. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0081] As can be seen from Figures 20 and 21, when the refractive index n of the low refractive index layer changes between 1.5 and 2.0, T TM Both are greater than 93%, and both PE are greater than 99%, and when the refractive index n of the low refractive index layer is 2.4, that is, when the refractive index of the low refractive index layer is the same as the refractive index of the second semiconductor layer, T TM The maximum value of is approximately 88%, and PE is 99%. When the refractive index n of the low refractive index layer is greater than 2.1, T is greater than when the refractive index n of the low refractive index layer is between 1.5 and 2.0. TM It decreases, and PE does not change significantly.

[0082] Considering Figures 20 and 21 comprehensively, it is determined that the refractive index n of the low refractive index layer is in the range of 1.5 to 2.0.

[0083] The optimization process for each of the above parameters is performed assuming that the light-emitting chip emits blue light (the wavelength range of the light is 460 nm). The optimal values ​​of each of the above parameters are applied to the light-emitting chip, and the T of the light within the visible light range (450 nm to 750 nm) is determined. TM Analysis of PE revealed that within the visible light range, T TM All of the values ​​are greater than 84%, and all of the PE values ​​are greater than 99%. The absorption rate of the first polarized light is approximately 5%, and the light loss is approximately 11%. The transmittance of the second linearly polarized light is approximately 0%, the absorption rate is 20%, and the reflectance is approximately 80%. As can be seen from this, within the entire visible light range, all emitted light is first linearly polarized, the transmittance of the light is 42%, the absorption rate is approximately 12.5%, and the reflectance is approximately 45.5%. In other words, within the entire visible light range, approximately 12.5% ​​of the light is absorbed and lost by the polarization structure, 45.5% of the light is reflected by the polarization structure, and the light reflected by the polarization structure is converted by the auxiliary structure into light containing first linearly polarized light, of which the first linearly polarized light passes through the polarization structure and is emitted.

[0084] In conjunction with the results of the above simulation, in order to improve the transmittance for first linear polarization and the polarization degree of the emitted light of the light-emitting chip shown in Figure 1 (the wire grid 21 includes a metal layer 211 and an inorganic material layer 212 located on the side of the metal layer 211 facing the second semiconductor layer 12, the metal layer 211 is in direct contact with the low refractive index layer 40, and the low refractive index layer 40 is located between the second semiconductor layer 12 and the polarization structure 20), the period range of the wire grid can be set to 40 nm to 200 nm, the width range of the wire grid to 10 nm to 70 nm, the thickness range of the metal layer to 60 nm to 160 nm, the thickness range of the inorganic material layer to 120 nm to 200 nm, and the thickness range of the low refractive index layer to 0 nm to 40 nm or 120 nm to 180 nm.

[0085] Furthermore, the period of the wire grid is 120 nm, the width of the wire grid is 40 nm, the material of the metal layer is aluminum, the thickness of the metal layer is 110 nm, the thickness of the low refractive index layer is 150 nm, the refractive index of the low refractive index layer is 1.9, the material of the inorganic material layer is SiO2, and the thickness of the inorganic material layer is 200 nm. With these settings, the transmittance of the light-emitting chip for first linearly polarized light is 93.6%, the polarization degree of the emitted light is 99.3%, and the transmittance of natural light is 46.9%.

[0086] In conjunction with the results of the above simulation, in order to improve the transmittance for first linear polarization and the polarization degree of the emitted light of the light-emitting chip shown in Figure 2 (the low refractive index layer 40 is located between the second semiconductor layer 12 and the polarization structure 20, the wire grid 21 includes only the metal layer 211, and the metal layer 211 is in direct contact with the low refractive index layer 40), the period range of the wire grid can be set to 40 nm to 200 nm, the width range of the wire grid to 10 nm to 70 nm, the thickness range of the metal layer to 60 nm to 160 nm, and the thickness range of the low refractive index layer to 0 nm to 40 nm or 120 nm to 180 nm.

[0087] To improve the transmittance of the light-emitting chip for first linearly polarized light and the polarization degree of the emitted light, embodiments of the present invention simulate the parameters of several film layers of the light-emitting chip shown in Figures 3 to 6. The structure used in the simulation includes a second semiconductor layer, a planar light source placed within the second semiconductor layer, an organic layer, a low refractive index layer located on one side of the second semiconductor layer, and a polarization structure. The polarization structure includes a plurality of periodically arranged wire grids, and the wire grids include a metal layer and an inorganic material layer. The material of the metal layer is aluminum, the material of the inorganic material layer is SiO2 with a refractive index of 1.5, and the material of the organic layer is an organic resin with a refractive index of 1.49. The parameters that can be optimized include the period and line width of the wire grid, the thickness of the metal layer, the thickness of the inorganic material layer, and the thickness and refractive index of the low refractive index layer. The optimization process of some of the above parameters will be described in detail below.

[0088] The process for optimizing the period of the wire grid is as follows: The thickness of the metal layer is 100 nm, the wire grid does not contain an inorganic material layer, does not consider a low refractive index layer, the organic layer contains only organic structures located between adjacent wire grids, and the width w of the wire grid is set to half the period p of the wire grid. The period of the wire grid takes multiple values ​​in the range of 10 nm to 300 nm, with a difference of 10 nm between two adjacent periods. Each value is simulated to obtain the curve diagrams shown in Figures 22 and 23. Figure 22 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the period of the wire grid. In Figure 22, the wavelength of the light is 460 nm, and curve k1 is the transmittance T of the first linearly polarized light. TM The first curve shows the relationship between the period p of the wire grid and the polarity PE of the emitted light, and the second curve shows the relationship between the period p of the wire grid and the polarity PE of the emitted light. Figure 23 is a diagram of the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. In Figure 23, the curve k3 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 20 nm. TM This is a relationship curve between the wavelength of light and the period p of the wire grid, where curve k4 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 120 nm. TMThis is a relationship curve between the wavelength of light and the period p of the wire grid, where curve k5 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 70 nm. TM This is a relationship curve between the wavelength of light and the period p of the wire grid, where curve k6 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 170 nm. TM This is a relationship curve between the wavelength of light and the period p of the wire grid, where curve k7 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 220 nm. TM This is a relationship curve between the period p of the wire grid and the wavelength of the light ray, where curve k8 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 270 nm. TM This is a relationship curve between the period p of the wire grid and the wavelength of the light ray, where curve k9 is the transmittance T of the first linearly polarized light when the period p of the wire grid is equal to 200 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0089] As can be seen from Figures 22 and 23, when the period p is 190 nm or less, T TM It is approximately 80%, and PE is approximately 95%, and when the period p is less than 120 nm, T TM When the polarization degree reaches over 80%, the polarization degree reaches over 99%, and the period p is less than 40 nm, T TM It reaches over 80%, and PE reaches 99.996%. Assuming that the process is machinable and stable mass production is possible, a small cycle can be selected, thereby T TM Increase both and PE.

[0090] Considering Figures 22 and 23 comprehensively, it is determined that the period range of the wire grid is 40 nm to 200 nm, and the optimal value for the period of the wire grid is 120 nm.

[0091] When the wire grid does not include an inorganic material layer, the process of optimizing the thickness of the metal layer is as follows. The period p of the wire grid is 120 nm, the width of the wire grid is 60 nm, the wire grid does not include an inorganic material layer, the low refractive index layer is not considered, and it is set such that the organic layer only includes an organic structure located between the adjacent wire grids. The thickness of the metal layer takes a plurality of values within the range of 0 nm to 200 nm, the difference in the thickness of two adjacent metal layers is 10 nm, each value is simulated, and the curve diagrams shown in FIGS. 24 and 25 are obtained. FIG. 24 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light and the degree of polarization of the emitted light ray and the thickness of the metal layer. The wavelength of the light ray in FIG. 24 is 460 nm, curve m1 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the thickness h4 of the metal layer, and curve m2 is a curve showing the relationship between the degree of polarization PE of the emitted light ray and the thickness h4 of the metal layer. FIG. 25 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light and the wavelength of the light ray. Curve m3 in FIG. 25 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 0 nm, and curve m4 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 40 nm, and curve m5 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 80 nm, and curve m6 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 120 nm, and curve m7 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 160 nm, and curve m8 is a curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray.

[0092] As can be seen from FIGS. 24 and 25, when the wire grid does not include an inorganic material layer, T TM changes non-linearly according to the change in the thickness h 4 of the metal layer, and when the thickness h 4 of the metal layer is 80 nm, T TMreaches about 70% of the maximum value, the PE is about 98%, and the thickness h of the metal layer 4 is a fixed value, and T changes TM with the change in the wavelength of the light ray, and the change range is small, about ±5%.

[0093] Considering FIGS. 24 and 25 comprehensively, when the wire grid does not include an inorganic material layer, the thickness h of the metal layer 4 is in the range of 70 nm to 90 nm, and it is determined that the optimal value of the thickness h of the metal layer 4 is 80 nm.

[0094] When the wire grid includes an inorganic material layer, the process of optimizing the thickness of the metal layer is as follows. The period p of the wire grid is 120 nm, the width of the wire grid is 60 nm, the thickness of the inorganic material layer is 60 nm, without considering the low refractive index layer, and it is set to include only the organic structure located between the adjacent wire grids where the organic layer is located. The thickness of the metal layer takes a plurality of values within the range of 0 nm to 200 nm, the difference in the thickness of two adjacent metal layers is 10 nm, each value is simulated, and the curve diagrams shown in FIGS. 26 and 27 are obtained. FIG. 26 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light and the polarization degree of the outgoing light ray and the thickness of the metal layer. The wavelength of the light ray in FIG. 26 is 460 nm, the curve n1 is the curve showing the relationship between the transmittance T TM of the first linearly polarized light and the thickness h4 of the metal layer, and the curve n2 is the curve showing the relationship between the polarization degree PE of the outgoing light ray and the thickness h4 of the metal layer. FIG. 27 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light and the wavelength of the light ray. The curve n3 in FIG. 27 is the curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 10 nm, and the curve n4 is the curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 60 nm, and the curve n5 is the curve showing the relationship between the transmittance T TM of the first linearly polarized light and the wavelength of the light ray when the thickness h4 of the metal layer is equal to 110 nm, and the curve n6 is the curve showing the relationship between the transmittance T TMThis is a relationship curve between the wavelength of light and the element, where curve n7 represents the transmittance T of first linearly polarized light when the thickness h4 of the metal layer is equal to 200 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0095] As can be seen from Figures 26 and 27, when the wire grid includes an inorganic material layer, T TM T changes non-linearly in response to changes in the thickness h4 of the metal layer, and when the thickness h4 of the metal layer is 110 nm, TM The maximum value reaches approximately 76%, and PE is approximately 99.88%. When the thickness h4 of the metal layer is greater than 80 nm, PE is greater than 99%, and when the thickness h4 of the metal layer is a fixed value, T depends on the change in the wavelength of the light. TM The range of change is small.

[0096] Considering Figures 26 and 27 comprehensively, it is determined that the range of the metal layer thickness h4 is 100 nm to 120 nm, and the optimal value for the metal layer thickness h4 is 110 nm.

[0097] The process for optimizing the wire grid width is as follows: The metal layer thickness is 110 nm, the inorganic material layer thickness is 60 nm, the low refractive index layer is not considered, the wire grid period p is 120 nm, and the organic layer is set to include only organic structures located between adjacent wire grids. The wire grid width w takes multiple values ​​within the range of 0 nm to 120 nm, with a difference of 10 nm between two adjacent widths. Each value is simulated to obtain the curve diagrams shown in Figures 28 and 29. Figure 28 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the wire grid width. In Figure 28, the wavelength of the light is 460 nm, and curve s1 represents the transmittance T of the first linearly polarized light. TM The first curve is the relationship between the polarity of the emitted light PE and the width of the wire grid w, and the second curve is the relationship between the polarization degree of the emitted light PE and the width of the wire grid w. Figure 29 is a diagram of the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. In Figure 29, the third curve is the transmittance of the first linearly polarized light T when the width of the wire grid w is equal to 10 nm. TMThis is a relationship curve between the wavelength of light and the signal strength, where curve s4 represents the transmittance T of first linearly polarized light when the wire grid width w is equal to 40 nm. TM This is a relationship curve between the wavelength of light and the signal strength, where curve s5 represents the transmittance T of first linearly polarized light when the width w of the wire grid is equal to 70 nm. TM This is a relationship curve between the wavelength of light and the signal strength, where curve s6 represents the transmittance T of first linearly polarized light when the width w of the wire grid is equal to 100 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0098] As can be seen from Figures 28 and 29, the smaller the width w of the wire grid, the greater T TM The value is large, and when the wire grid width w is between 40nm and 50nm, T TM It reaches approximately 80%, PE is greater than 99.34%, and when the wire grid width w is greater than 50 nm, T increases in proportion to the increase in wire grid width. TM It decreases rapidly, and PE is maintained at over 99%.

[0099] Considering Figures 28 and 29 comprehensively, it is determined that the width range of the wire grid is 40 nm to 60 nm, and the optimal value for the width of the wire grid is 50 nm.

[0100] The process for optimizing the thickness of the low refractive index layer is as follows: The metal layer thickness is set to 110 nm, the wire grid does not contain an inorganic material layer, the wire grid width is 40 nm, the wire grid period is 120 nm, and the refractive index of the low refractive index layer is set to 1.5. The thickness h5 of the low refractive index layer takes multiple values ​​within the range of 0 nm to 200 nm, with a difference of 10 nm between two adjacent thicknesses. Each value is simulated to obtain the curve diagrams shown in Figures 30 and 31. Figure 30 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the thickness of the low refractive index layer. In Figure 30, the wavelength of the light is 460 nm, and curve t1 represents the transmittance of the first linearly polarized light T TMThe first curve shows the relationship between the polarization degree PE of the emitted light and the thickness h5 of the low refractive index layer, and the second curve shows the relationship between the polarization degree PE of the emitted light and the thickness h5 of the low refractive index layer. Figure 31 is a diagram of the relationship between the transmittance of the first linearly polarized light and the wavelength of the light. In Figure 31, the curve t3 is the transmittance T of the first linearly polarized light when the thickness h5 of the low refractive index layer is equal to 0 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve t4 is the transmittance of first linearly polarized light when the thickness h5 of the low refractive index layer is equal to 20 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve t5 is the transmittance of first linearly polarized light when the thickness h5 of the low refractive index layer is equal to 60 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve t6 represents the transmittance T of first linearly polarized light when the thickness h5 of the low refractive index layer is equal to 100 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve t7 is the transmittance T of the first linearly polarized light when the thickness h5 of the low refractive index layer is equal to 140 nm. TM This is a relationship curve between the wavelength of light and the refractive index, where curve t8 is the transmittance T of first linearly polarized light when the thickness h5 of the low refractive index layer is equal to 180 nm. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0101] As can be seen from Figures 30 and 31, when the thickness h5 of the low refractive index layer is in the range of 10 nm to 30 nm or 170 nm to 190 nm, T TM It reaches a maximum of approximately 85%, and when the thickness h5 of the low refractive index layer is 0, i.e., when the low refractive index layer is not included, T TM T is approximately 58%, and PE is approximately 97.5%. When the light-emitting chip does not include a low refractive index layer, and when the light-emitting chip includes a low refractive index layer and the thickness of the low refractive index layer is fixed, T changes depending on the wavelength of the light. TM The range of change is small.

[0102] Considering Figures 30 and 31 comprehensively, it is determined that the range of the thickness h5 of the low refractive index layer is 10 nm to 30 nm or 170 nm to 200 nm, and that the optimal value for the thickness h5 of the low refractive index layer is 20 nm or 180 nm.

[0103] The process for optimizing the refractive index of the low refractive index layer is as follows: The metal layer thickness is set to 110 nm, the wire grid does not contain an inorganic material layer, the wire grid width is 40 nm, the wire grid period is 120 nm, the refractive index of the second semiconductor layer is 2.4, and the low refractive index layer thickness is 180 nm. The refractive index n of the low refractive index layer takes multiple values ​​within the range of 1.4 to 2.4, with a difference of 0.1 between adjacent refractive indices. Each value is simulated to obtain the curve diagrams shown in Figures 32 and 33. Figure 32 is a curve diagram showing the relationship between the transmittance of the first linearly polarized light, the polarization degree of the emitted light, and the refractive index of the low refractive index layer. In Figure 32, the wavelength of the light is 460 nm, and curve x1 represents the transmittance T of the first linearly polarized light. TM The first curve shows the relationship between the refractive index n of the low refractive index layer and the polarity PE of the emitted light ray. The second curve shows the relationship between the polarity PE of the emitted light ray and the refractive index n of the low refractive index layer. Figure 33 is a diagram of the relationship between the transmittance of the first linearly polarized light ray and the wavelength of the light ray. In Figure 33, the third curve shows the transmittance T of the first linearly polarized light ray when the refractive index n of the low refractive index layer is equal to 1.4. TM This is a relationship curve between the wavelength of light and the refractive index, where curve x4 is the transmittance T of first linearly polarized light when the refractive index n of the low refractive index layer is equal to 1.8. TM This is a relationship curve between the refractive index and the wavelength of light, where curve x5 is the transmittance T of the first linearly polarized light when the refractive index n of the low refractive index layer is equal to 2.2. TM This is a relationship curve between the wavelength of light and the refractive index, where curve x6 represents the transmittance T of first linearly polarized light when the refractive index n of the low refractive index layer is equal to 2.4. TM This is a relationship curve between the wavelength of light and the wavelength of light.

[0104] As can be seen from Figures 32 and 33, as the refractive index n of the low refractive index layer increases, T TM When the refractive index n of the low refractive index layer decreases, and PE increases before decreasing, T TM The polarization reaches a maximum of 86%, and the degree of polarization is approximately 98.8%. Therefore, a low refractive index layer can be manufactured by selecting materials with low refractive indices as much as possible, for example, SiO2 with a refractive index of 1.5 or MgF with a refractive index of 1.38 can be selected.

[0105] Considering Figures 32 and 33 comprehensively, it is determined that the refractive index n of the low refractive index layer is less than 1.9.

[0106] When the light-emitting chip includes an inorganic material layer and an organic layer, and the refractive index of the inorganic material layer is the same as or slightly different from that of the organic layer, and both are less than 1.9, the effect of the inorganic material layer and the organic layer on adjusting the transmittance of the first linearly polarized light and the polarization degree of the emitted light is basically the same. Therefore, in the embodiments shown in Figures 3, 5, and 6, the spacing range between the surface of the inorganic material layer away from the second semiconductor layer and the surface of the low refractive index layer facing the second semiconductor layer can be determined to be 170 nm to 200 nm.

[0107] In conjunction with the results of the above simulation, in order to improve the transmittance and polarization degree of the emitted light for the first linearly polarized light of the light-emitting chip shown in Figure 4, the period range of the wire grid can be set to 40 nm to 200 nm, the width range of the wire grid to 40 nm to 60 nm, the thickness range of the metal layer to 70 nm to 90 nm, and the thickness range of the low refractive index layer to 10 nm to 30 nm or 170 nm to 200 nm.

[0108] Furthermore, the period of the wire grid is less than 160 nm, the ratio of the wire grid width to the wire grid period is in the range of 33% to 42%, the thickness of the metal layer is 110 nm, the thickness range of the low refractive index layer is 170 nm to 190 nm, and the refractive index range of the low refractive index layer is 1.4 to 1.5. With these settings, the transmittance of the light-emitting chip for first linearly polarized light is 83.15%, the polarization degree of the emitted light is 99.75%, and the transmittance of natural light is 41.63%.

[0109] In conjunction with the results of the above simulations, in order to improve the transmittance and polarization degree of the emitted light for the first linearly polarized light of the light-emitting chip shown in Figures 3, 5, and 6, the period range of the wire grid can be set to 40 nm to 200 nm, the width range of the wire grid to 40 nm to 60 nm, the thickness range of the metal layer to 100 nm to 120 nm, and the spacing range between the surface of the inorganic material layer away from the second semiconductor layer and the surface of the low refractive index layer facing the second semiconductor layer to 170 nm to 200 nm.

[0110] Furthermore, the period of the wire grid is less than 160 nm, the ratio of the wire grid width to the wire grid period is in the range of 33% to 42%, the thickness of the metal layer is 110 nm, the refractive index range of the low refractive index layer is 1.4 to 1.5, and the spacing range between the surface of the inorganic material layer away from the second semiconductor layer and the surface of the low refractive index layer facing the second semiconductor layer is 170 nm to 200 nm.

[0111] The optimization process for each of the above parameters is performed assuming that the light-emitting chip emits blue light (the wavelength range of the light is 460 nm). Applying the optimal values ​​of each of the above parameters to the light-emitting chip and simulating the results, the T in the visible light range was TM The wavelength varies greatly depending on the wavelength, and the wavelength range of the light emitted from the light-emitting chip whose emission color is red is 640nm to 700nm, the wavelength range of the light emitted from the light-emitting chip whose emission color is green is 500nm to 580nm, and the emission color is blue The wavelength range of the light emitted from the light-emitting chip can be set to 430nm to 490nm, thereby T TM Increase the (85% or more) and increase the PE (98.8% or more). Within the visible light range, T TMThe transmittance is approximately 80%, the absorptance is approximately 12%, and the reflectance is approximately 8%. The transmittance of second linearly polarized light is basically 0, the absorptance is 20%, and the reflectance is approximately 80%. As can be seen from this, within the entire visible light range, all emitted light rays are first linearly polarized, with a transmittance of approximately 40%, an absorptance of approximately 12.5%, a reflectance of approximately 44%, and an absorptance of approximately 16%.

[0112] In one embodiment, as shown in Figures 1 to 6, the light-emitting chip further includes a reflective film layer 60, which surrounds the side of the light-emitting layer 10. With this configuration, light rays emitted from the side of the light-emitting layer 10 are reflected by the reflective film layer 60, then reflected again by reflective film layers located on other sides of the light-emitting layer, and finally exit through the polarization structure, thereby improving the utilization rate of the light rays without affecting the polarization degree of the emitted light rays. The portions of the reflective film layer 60 located on each side of the light-emitting layer 10 may be positioned at an angle, thus contributing to the emission of light rays from the side of the light-emitting layer 10. The material of the reflective film layer 60 may include a highly reflective material, or the reflective film layer 60 may include multiple layers, for example, in which highly reflective and low-reflective layers are arranged alternately in the multiple layers.

[0113] In another embodiment, the light-emitting chip further includes a light-absorbing film layer, the light-absorbing film layer surrounding the side of the light-emitting layer 10, and the absorbing film layer is positioned to absorb light rays emitted from the side of the light-emitting layer 10. With this configuration, light rays emitted from the side of the light-emitting layer 10 do not affect the polarization degree of light rays emitted from the light-emitting chip.

[0114] In one embodiment, the light-emitting chip according to the embodiment of the present invention is a Mini LED or a Micro LED, with the size of the Mini LED being approximately 100 μm to 500 μm, and the size of the Micro LED being smaller than 100 μm.

[0115] When the polarization structure of the light-emitting chip according to the embodiment of the present invention is formed in the protective layer, the polarization structure can also be applied to liquid crystal display devices, replacing the two polarizing plates located on opposite sides of the liquid crystal display panel in a liquid crystal display device.

[0116] The simulation results showed that, regardless of whether the light rays enter the polarizing structure from the air or from the protective layer, T across the entire visible light wavelength band. TM All of these are over 90%, and PE is over 99.9975%, which is higher than the polarization degree of conventional polarizing plates. First linear polarization The absorption rate is approximately 7%, the reflectance is approximately 3%, approximately 85% of the second linearly polarized light is reflected by the polarization structure, the transmittance of the second linearly polarized light is zero, and the absorption rate is 15%. As can be seen from this, the transmittance of the polarization structure for light rays is T TM It is half of that, approximately 45%, with about 45% of the light rays reflected by the polarization mechanism and about 10% of the light rays absorbed by the polarization structure.

[0117] Embodiments of the present invention further provide a light-emitting substrate. The light-emitting substrate includes a drive circuit layer and a plurality of light-emitting chips as described in any of the above embodiments, wherein the drive circuit layer includes a drive circuit for driving the light-emitting chips.

[0118] In one embodiment, the light-emitting substrate includes a light-emitting chip that emits a red light, a light-emitting chip that emits a green light, and a light-emitting chip that emits a blue light. The wavelength range of the light emitted from the light-emitting chip that emits a red light is 640 nm to 700 nm, and the wavelength range of the light emitted from the light-emitting chip that emits a green light is 500 nm to 580 nm, and the light-emitting color is blue The wavelength range of the light emitted from the light-emitting chip is 430nm to 490nm. By setting it in this way, the emission rate of the first linearly polarized light and the polarization degree of the emitted light can be improved.

[0119] In one embodiment, As shown in Figure 39, The light-emitting substrate has a light-absorbing structure located between adjacent light-emitting chips. 70This further includes the following. By setting it in this way, light rays emitted from the side of the light-emitting layer 10 are absorbed by the light-absorbing structure, thus avoiding any influence on the polarization degree of the light rays emitted from the light-emitting chip.

[0120] In another embodiment, As shown in Figure 40, The light-emitting substrate is an absorption layer located on the light-emitting side of the light-emitting chip. 700 The further comprising via holes in the absorption layer 701 A via hole is provided so that the orthographic projection of the absorption layer of the light-emitting chip overlaps with the via hole. By setting it in this way, only light rays that have passed through the polarization structure can be emitted, and other light rays, such as light rays emitted from the side of the chip, are all absorbed by the absorption layer, thus avoiding any influence on the polarization degree of the light rays emitted from the light-emitting chip.

[0121] In yet another embodiment, As shown in Figure 41, The light-emitting substrate is a reflective film layer located on the light-emitting side of the light-emitting chip. 800 The reflective film layer further includes openings 801 A feature is provided such that the orthographic projection of the reflective film layer of the light-emitting chip overlaps with the opening. By setting it in this way, only light rays that have passed through the polarizing structure can be emitted, and light rays emitted from the side of the chip are reflected by the reflective film layer, thus avoiding any influence on the polarization degree of the light rays emitted from the light-emitting chip.

[0122] The embodiments of the present invention further provide a backlight module, which includes a light-emitting substrate as described in any of the embodiments described above.

[0123] In one embodiment, as shown in Figure 34, the light-emitting chip 100 is located on one side of the drive circuit layer 200, and the light-emitting side of the light-emitting chip 100 is away from the drive circuit layer 200. That is, the backlight module is of the direct-lit type.

[0124] In another embodiment, as shown in Figure 35, the backlight module includes a light guide plate 300 located on one side of the drive circuit layer 200, and the light-emitting chip 100 is located on the side of the light guide plate 300. That is, the backlight module is edge-type.

[0125] In one embodiment, as shown in Figures 34 and 35, the backlight module further includes a brightness-enhancing film 400 located on the light-emitting side of the light-emitting chip 100. The brightness-enhancing film 400 can improve the brightness of the backlight module.

[0126] In one embodiment, as shown in Figures 34 and 35, the backlight module further includes a gas 600 located on the side of the brightness-enhancing film 400 facing the light-emitting chip 100. The gas 600 may be air.

[0127] In the backlight module according to the embodiment of the present application, since the light emitted from the light-emitting chip is linearly polarized, the film layer structure of the backlight module can be simplified. Excluding the light-emitting chip, light guide plate, and drive circuit layer, the backlight module can include only a brightness-enhancing film, significantly improving the light transmittance of the backlight module. Assuming the transmittance of a single-layer film is 90%, the light transmittance of the backlight module according to the embodiment of the present application is 90%. Conventional backlight modules include a light-emitting chip, light guide plate, drive circuit layer, two layers of brightness-enhancing film, color-enhancing film, diffusion film, and diffusion plate, and have a light transmittance of 53%. Compared to conventional backlight modules, the light transmittance of the backlight module according to the embodiment of the present application is improved by 70%. Furthermore, the display device including the backlight module according to the embodiment of the present invention can save the polarizing plate located on the side of the liquid crystal display panel closer to the backlight module. In conventional display devices including a backlight module, it is necessary to install a polarizing plate on the side of the liquid crystal display panel closer to the backlight module, and if the transmittance of the polarizing plate is 50%, the utilization rate after the light rays emitted from the light-emitting chip of the conventional backlight module pass through the polarizing plate is 26.5%. In the embodiment of the present invention, since it is not necessary to install a polarizing plate on the side of the liquid crystal display panel closer to the backlight module, the transmittance of the light rays emitted from the light-emitting chip reaches 90% when it reaches the surface of the liquid crystal display panel facing the backlight module, which is a 240% improvement compared to conventional backlight modules.

[0128] The embodiments of this application further provide a display device.

[0129] In one embodiment, as shown in Figures 36 and 37, the display device includes a liquid crystal display panel 500 and a backlight module as described in any of the above embodiments. The liquid crystal display panel 500 is located on the light-emitting side of the backlight module. The liquid crystal display panel 500 includes a substrate 501 located on the light-emitting side of the backlight module, a pixel driving circuit layer 502 located on the side of the substrate 501 away from the light-emitting module, a liquid crystal layer 503 located on the side of the pixel driving circuit layer 502 away from the light-emitting module, a color film layer 504 located on the side of the liquid crystal layer 503 away from the light-emitting module, and a polarizing film layer located on the side of the color film layer 504 away from the light-emitting module. 505 The polarizing film layer may be a polarizing plate or the polarizing structure of the embodiment of this application.

[0130] In another embodiment, the display device includes a display panel, and the display panel is a light-emitting substrate as described in any of the above embodiments.

[0131] In one embodiment, the display device further includes a casing. The display panel is It is fitted inside the housing.

[0132] The display device according to the embodiment of the present application may be any suitable display device, and includes, but is not limited to, any product or component having a display function such as a mobile phone, tablet PC, television, display, notebook computer, digital photo frame, navigator, or e-book. In particular, the display device may be an AR display device, a VR display device, an MR display device, etc.

[0133] Note that in the drawings, the sizes of layers and regions may be exaggerated for clarity. Also, to ensure clarity, when an element or layer is described as being "on top" of another element or layer, it may be directly on top of the other element, or an intermediate layer may be present. Also, to ensure clarity, when an element or layer is described as being "below" another element or layer, it may be directly below the other element, or one or more intermediate layers or elements may be present. Also, to ensure clarity, when a layer or element is described as being "between" two layers or two elements, it may be the only layer between the two layers or two elements, or one or more intermediate layers or elements may be present. Throughout the text, similar symbols indicate similar elements.

[0134] A person skilled in the art, after considering the specification and putting into practice what is disclosed herein, will readily conceive of other embodiments of the Application. The Application is intended to cover any variation, use or adaptive change of any of the Application, which may include common or conventional technical means in the Art that are not disclosed herein, in accordance with the general principles of the Application. The Specification and Examples are illustrative only, and the scope and spirit of the Application are limited by the following claims.

[0135] As should be understood, this application is not limited to the exact structure described above and shown in the drawings, and various modifications and changes may be made without departing from its scope. The scope of this application is limited only to the attached claims.

[0136] As should be understood, this application is not limited to the exact structure described above and shown in the drawings, and various modifications and changes may be made without departing from its scope. The scope of this application is limited only to the attached claims. [Explanation of symbols]

[0137] 10. Emitting layer 11. First Semiconductor Layer 12 Second Semiconductor Layer 13 Quantum well layer 20 Polarization structure 21 Wire Grid 30 Auxiliary structure 31. First polarizing film layer 32 Reflective material layer 40 Low refractive index layer 41 Low refractive index structure 50 base boards 60 Reflective film layer 71 1st electrode 72 2nd electrode 76 Maximum value 80 organic layer 81 Organic structure 82 Organic material film layer 90 protective layer 100 light-emitting chips 200 Drive circuit layer 211 Metal layer 212 Inorganic material layer 300 Light guide plate 400 Brightness Enhancement Film 500 LCD display panels 501 circuit board 502 Pixel Driving Circuit Layer 503 Liquid Crystal Layer 504 Color film layer 600 gas

Claims

1. A light-emitting chip comprising a light-emitting layer, a polarizing structure, an auxiliary structure, and a low refractive index layer, The light-emitting layer includes a first semiconductor layer, a second semiconductor layer, and a quantum well layer located between the first semiconductor layer and the second semiconductor layer. The polarization structure is located on the side of the second semiconductor layer away from the quantum well layer, and is arranged to emit a first linearly polarized light ray emitted from the light-emitting layer and reflect a second linearly polarized light ray emitted from the light-emitting layer, and the vibration direction of the first linearly polarized light ray and the vibration direction of the second linearly polarized light ray are perpendicular to each other. The auxiliary structure is located on the side of the polarization structure facing the light-emitting layer, and is arranged to convert the second linearly polarized light reflected by the polarization structure into a ray that includes the first linearly polarized light and propagates to the polarization structure. The light-emitting chip is characterized in that the low refractive index layer is located on the side of the second semiconductor layer away from the quantum well layer and is in direct contact with the second semiconductor layer, and the difference △n1 between the refractive index of the second semiconductor layer and the refractive index of the low refractive index layer satisfies 0.5 ≤ △n1 ≤ 1.

0.

2. The light-emitting chip according to claim 1, wherein the polarization structure includes a plurality of periodically arranged wire grids, the wire grids include a metal layer and an inorganic material layer located on the side of the metal layer away from the second semiconductor layer, and the thickness of the inorganic material layer is greater than the thickness of the metal layer.

3. The light-emitting chip according to claim 1, wherein the polarization structure includes a plurality of periodically arranged wire grids, the wire grid includes a metal layer and an inorganic material layer located on the side of the metal layer facing the second semiconductor layer, the low refractive index layer is located between the second semiconductor layer and the polarization structure, and the thickness of the inorganic material layer is greater than the thickness of the low refractive index layer.

4. The light-emitting chip according to claim 3, characterized in that the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 10 nm to 70 nm, the thickness range of the metal layer is 60 nm to 160 nm, the thickness range of the inorganic material layer is 120 nm to 200 nm, and the thickness range of the low refractive index layer is 0 nm to 40 nm or 120 nm to 180 nm.

5. The light-emitting chip according to claim 1, characterized in that the polarization structure includes a plurality of periodically arranged wire grids, the wire grids include a metal layer, the low refractive index layer is located between the second semiconductor layer and the polarization structure, and the metal layer is in direct contact with the low refractive index layer.

6. The light-emitting chip according to claim 5, characterized in that the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 10 nm to 70 nm, the thickness range of the metal layer is 60 nm to 160 nm, and the thickness range of the low refractive index layer is 0 nm to 40 nm or 120 nm to 180 nm.

7. The light-emitting chip according to claim 1, characterized in that the polarization structure includes a plurality of periodically arranged wire grids, the low refractive index layer is located between the second semiconductor layer and the polarization structure, the light-emitting chip further includes an organic layer located on the side of the low refractive index layer away from the second semiconductor layer and in direct contact with the low refractive index layer, the organic layer includes at least an organic structure located between adjacent wire grids, and the difference in refractive index between the low refractive index layer and the organic layer is Δn² ≤ 0.

4.

8. The wire grid comprises only a metal layer, and the metal layer is in direct contact with the low refractive index layer. The light-emitting chip according to claim 7, characterized in that the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 40 nm to 60 nm, the thickness range of the metal layer is 70 nm to 90 nm, and the thickness range of the low refractive index layer is 10 nm to 30 nm or 170 nm to 200 nm.

9. The polarization structure includes a plurality of periodically arranged wire grids, each wire grid including a metal layer and an inorganic material layer located on the side of the metal layer facing the second semiconductor layer. The light-emitting chip according to claim 1, wherein the low refractive index layer comprises a plurality of low refractive index structures, the low refractive index structures are located between adjacent wire grids, the material of the low refractive index layer is an organic material, or the low refractive index layer is located between the inorganic material layer and the second semiconductor layer, and the light-emitting chip further comprises an organic layer located on the side of the low refractive index layer away from the second semiconductor layer and in direct contact with the low refractive index layer, the organic layer comprises an organic structure located between adjacent wire grids, or the organic layer comprises an organic structure located between adjacent wire grids and an organic material film layer located between the inorganic material layer and the low refractive index layer.

10. The light-emitting chip according to claim 9, characterized in that the periodic range of the wire grid is 40 nm to 200 nm, the width range of the wire grid is 40 nm to 60 nm, the thickness range of the metal layer is 100 nm to 120 nm, and the spacing range between the surface of the inorganic material layer away from the second semiconductor layer and the surface of the low refractive index layer facing the second semiconductor layer is 170 nm to 200 nm.

11. The light-emitting chip according to claim 1, further comprising a protective layer located on the side of the polarizing structure away from the light-emitting layer.

12. The polarization structure includes a plurality of wire grids arranged periodically. The low refractive index layer is located between the light-emitting layer and the polarizing structure, and the light-emitting chip further includes an organic layer located on the side of the low refractive index layer away from the light-emitting layer and in direct contact with the low refractive index layer, the organic layer includes at least an organic structure located between adjacent wire grids, and the difference between the refractive index of the organic layer and the refractive index of the protective layer is Δn3 ≤ 0.4, or, The light-emitting chip according to claim 11, characterized in that the low refractive index layer includes a low refractive index structure located between adjacent wire grids, the material of the low refractive index layer is an organic material, and the difference between the refractive index of the low refractive index layer and the refractive index of the protective layer is △n4 ≤ 0.

4.

13. The light-emitting chip further includes a reflective film layer, the reflective film layer surrounding the side of the light-emitting layer, or The light-emitting chip further includes a light-absorbing film layer, the light-absorbing film layer surrounds the side of the light-emitting layer, and the absorbing film layer is arranged to absorb light rays emitted from the side of the light-emitting layer, as described in claim 1.

14. The auxiliary structure includes a reflective layer or a scattering reflective layer located on the side of the light-emitting layer away from the polarization structure, or The auxiliary structure includes a reflective material layer located on the side of the light-emitting layer away from the polarizing structure, and a first polarizing film layer located between the polarizing structure and the reflective material layer, wherein the first polarizing film layer is arranged to deflect the phase of the light rays that pass through it by π / 2, or The light-emitting chip according to claim 1, wherein the auxiliary structure includes a second polarizing film layer located on the side of the light-emitting layer away from the polarizing structure, and the second polarizing film layer is arranged to reflect second linearly polarized light and convert it into first linearly polarized light.

15. A light-emitting substrate comprising a drive circuit layer and a plurality of light-emitting chips according to any one of claims 1 to 14, wherein the drive circuit layer comprises a drive circuit for driving the light-emitting chips.

16. The light-emitting substrate includes a light-emitting chip that emits a red light, a light-emitting chip that emits a green light, and a light-emitting chip that emits a blue light. The light-emitting substrate according to claim 15, characterized in that the wavelength range of the light emitted from the light-emitting chip having a red emission color is 640 nm to 700 nm, the wavelength range of the light emitted from the light-emitting chip having a green emission color is 500 nm to 580 nm, and the wavelength range of the light emitted from the light-emitting chip having a green emission color is 430 nm to 490 nm.

17. The light-emitting substrate further includes a light-absorbing structure located between adjacent light-emitting chips, or The light-emitting substrate further includes an absorption layer located on the light-emitting side of the light-emitting chip, and via holes are provided in the absorption layer, and the orthographic projection of the light-emitting layer of the light-emitting chip on the absorption layer overlaps with the via holes, or The light-emitting substrate according to claim 15, further comprising a reflective film layer located on the light-emitting side of the light-emitting chip, wherein an opening is provided in the reflective film layer, and the orthographic projection of the light-emitting layer of the light-emitting chip on the reflective film layer coincides with the opening.

18. A backlight module characterized by including a light-emitting substrate as described in any one of claims 15 to 17.

19. The light-emitting chip is located on one side of the drive circuit layer, and the light-emitting side of the light-emitting chip is away from the drive circuit layer, or The backlight module according to claim 18, wherein the backlight module includes a light guide plate located on one side of the drive circuit layer, and the light-emitting chip is located on the side of the light guide plate.

20. The backlight module according to claim 18, further comprising a brightness-enhancing film located on the light-emitting side of the light-emitting chip.

21. A display device comprising a liquid crystal display panel and a backlight module according to any one of claims 18 to 20, The display device includes a display panel, and the display panel is a light-emitting substrate according to any one of claims 15 to 17.

Images