Methods for producing optoelectronic components, and optoelectronic components

Abstract

The present invention relates to a method for producing an optoelectronic component, comprising the steps of: forming a grid having conductive material connecting pieces on the back side of a transparent substrate, wherein cells of the grid are formed between the connecting pieces; placing a wavelength conversion material in at least one cell of the grid; arranging optoelectronic semiconductor chips across the cells of the grid, wherein each optoelectronic semiconductor chip has a front side and a back side, with the front side of the optoelectronic semiconductor chip facing the back side of the substrate, and the optoelectronic semiconductor chips are conductively connected to the grid; arranging a filler material on the back side of the substrate, wherein the optoelectronic semiconductor chips are embedded in the filler material such that the back side of the optoelectronic semiconductor chips is not covered by the filler material; and arranging driver chips across the back side of the optoelectronic semiconductor chips, wherein the optoelectronic semiconductor chips are conductively connected to the driver chips.

Description

Technical Field

[0001] The present invention relates to a method for producing optoelectronic components and to optoelectronic components.

[0002] This patent application claims the priority of German Patent Application No. 102023111267.8, the disclosure of which is incorporated herein by reference.

Background Art

[0003] Pixelated optoelectronic components are known in the prior art and are used, for example, as headlamps in motor vehicles. In such components, a high contrast ratio between adjacent pixels is desirable.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The object of the present invention is to specify a method for producing optoelectronic components. A further object of the present invention is to provide optoelectronic components. These objects are achieved by a method for producing optoelectronic components and by optoelectronic components having the features of the independent claims. Various developments are specified in the dependent claims.

Means for Solving the Problems

[0005] A method for producing optoelectronic components includes the steps of: forming a grid on the back side of a transparent substrate having walls made of a conductive material, wherein cells of the grid are formed between the walls; placing a wavelength conversion material in at least one cell of the grid; arranging optoelectronic semiconductor chips across the cells of the grid, wherein each optoelectronic semiconductor chip has a front side and a back side, with the front side of the optoelectronic semiconductor chip facing the back side of the substrate, and the optoelectronic semiconductor chips are electrically connected to the grid; placing a filler material on the back side of the substrate, wherein the optoelectronic semiconductor chips are embedded in the filler material such that the back side of the optoelectronic semiconductor chips is not covered by the filler material; and arranging driver chips across the back side of the optoelectronic semiconductor chips, wherein the optoelectronic semiconductor chips are electrically connected to the driver chips.

[0006] In this method, the optoelectronic component is constructed upside down on a substrate with an active outer layer. A grid for electrical contact of the optoelectronic semiconductor chip is provided on the back side of the substrate, which can also favorably ensure the optical separation of pixels embodied by the optoelectronic semiconductor chip in the optoelectronic component obtainable by this method, thus ensuring an increased contrast ratio. The grid is additionally used to accept wavelength conversion material, and as a result, the optoelectronic component obtainable by this method can provide integrated wavelength conversion. A further advantage of this method and the optoelectronic component obtainable by this method is that the optoelectronic semiconductor chips are electrically contacted from both their front and back sides, which simplifies the conductor layout and improves the thermal coupling of the optoelectronic semiconductor chips. This method can be implemented at the wafer level, which can also be advantageous in terms of favorable production costs.

[0007] In one embodiment of this method, a further step is performed prior to the placement of the filler material, which involves providing via structures on the back side of the substrate that are electrically connected to a grid. The via structures are embedded in the filler material such that the back side of the via structures is not covered by the filler material. Subsequently, the via structures are electrically connected to a driver chip. In this way, the via structures establish a conductive connection between the driver chip and the grid located on the back side of the substrate, and thus a conductive connection between the driver chip and the electrical contacts of the optoelectronic semiconductor chip located on the front side of the optoelectronic semiconductor chip.

[0008] In one embodiment of this method, the wavelength conversion material is not placed in at least one cell of the grid. Thus, the method offers the advantage that different cells, and therefore different pixels of the optoelectronic component obtainable by this method, can be configured differently.

[0009] In one embodiment of this method, the filler material is also placed in cells where the wavelength conversion material is not located. Advantageously, this avoids cavities between the front side of the optoelectronic semiconductor chip and the back side of the substrate, thereby avoiding undesirable discontinuities in the refractive index in this region.

[0010] In one embodiment of this method, different types of optoelectronic semiconductor chips are arranged across the cells of a grid. Advantageously, this allows for the formation of pixels of optoelectronic components having different properties, which can be obtained by this method.

[0011] In one embodiment of this method, a further step of removing a portion of the filler material to expose the back side of the optoelectronic semiconductor chip is performed after the placement of the filler material to the back side of the substrate. This allows the filler material to be initially placed so that the back side of the optoelectronic semiconductor chip is covered by the filler material. Subsequently, the back side of the optoelectronic semiconductor chip is exposed again by the removal of a portion of the filler material. Advantageously, this method can be carried out particularly easily in this way.

[0012] In one embodiment of this method, a further step of placing a conductive connecting material on the grid walls is performed before placing the optoelectronic semiconductor chip. The optoelectronic semiconductor chip is then conductively connected to the grid via the connecting material. Advantageously, this allows for particularly simple establishment of a conductive connection between the optoelectronic semiconductor chip and the grid.

[0013] In one embodiment of this method, the grid is formed with a thickness between 2 μm and 20 μm. Advantageously, the cells of the grid are thus suitable for accepting wavelength conversion materials. Furthermore, the grid enables the optical separation of individual pixels of the optoelectronic component that can thus be obtained by this method.

[0014] In one embodiment of this method, in addition to the grid, further identical grids are formed on the back side of the substrate. The above processing steps are also performed for each further grid. Driver chips are provided in the wafer assembly together with further identical driver chips. An optoelectronic semiconductor chip assigned to one of the further grids is conductively connected to one of the further driver chips. To complete the process, the optoelectronic components and further identical optoelectronic components are isolated. Advantageously, this method thus enables the parallel production of a large number of identical optoelectronic components at the wafer level. This makes it possible to implement this method particularly economically.

[0015] The optoelectronic component comprises a transparent substrate with a back side. A grid with walls made of conductive material is formed on the back side of the substrate. Cells of the grid are formed between the walls. A wavelength conversion material is placed in at least one cell of the grid. Optoelectronic semiconductor chips are arranged across the cells of the grid, with each optoelectronic semiconductor chip having a front side and a back side. The front side of the optoelectronic semiconductor chip faces the back side of the substrate. The optoelectronic semiconductor chip is conductively connected to the grid. A filler material is placed on the back side of the substrate. The optoelectronic semiconductor chip is embedded in the filler material such that the back side of the optoelectronic semiconductor chip is not covered by the filler material. A driver chip is arranged across the back side of the optoelectronic semiconductor chip. The optoelectronic semiconductor chip is conductively connected to the driver chip.

[0016] A grid for electrical contact of the optoelectronic semiconductor chip is provided on the back side of the substrate, which can also favorably ensure the optical separation of pixels embodied by the optoelectronic semiconductor chip in the optoelectronic component, thus guaranteeing an increased contrast ratio. The grid is additionally used to accept wavelength conversion material, and as a result the optoelectronic component provides integrated wavelength conversion. A further advantage of this optoelectronic component is that the optoelectronic semiconductor chips are electrically contacted from both their front and back sides, which simplifies the conductor layout and improves the thermal coupling of the optoelectronic semiconductor chips.

[0017] In one embodiment of the optoelectronic component, it comprises more than 50,000 optoelectronic semiconductor chips, particularly more than 100,000 optoelectronic semiconductor chips. This enables high-resolution image generation for the optoelectronic component.

[0018] In one embodiment of an optoelectronic component, at least one of the optoelectronic semiconductor chips is formed as a light-emitting diode chip, a VCSEL chip, or a detector chip. It is also possible that the optoelectronic component comprises different types of optoelectronic semiconductor chips, each formed as a light-emitting diode chip, a VCSEL chip, or a detector chip. This advantageously allows for greater flexibility in the configuration of the optoelectronic component.

[0019] In one embodiment of an optoelectronic component, the filler material is spin-on glass. Advantageously, the filler material can therefore be applied easily and economically and possesses desirable mechanical and dielectric properties.

[0020] In one embodiment of an optoelectronic component, the filler material is reflective or absorbent. Advantageously, crosstalk between adjacent optoelectronic semiconductor chips can be reduced particularly effectively in this way.

[0021] In one embodiment of an optoelectronic component, the driver chip is a silicon chip. Advantageously, the driver chip can therefore integrate different electronic functionalities.

[0022] In one embodiment of the optoelectronic component, the substrate is made of glass. Advantageously, light generated by the optoelectronic component can therefore be emitted through the substrate.

[0023] In one embodiment of an optoelectronic component, the front surface of the substrate is structured. For example, such structure may provide optical functionality. For instance, the front surface of the substrate may be configured as, for example, a microlens array.

[0024] In addition to the above properties, features, and advantages of the present invention, the manner in which they are achieved will become clearer and more readily understandable in conjunction with the following description of exemplary embodiments, which will be described in more detail in connection with the schematic drawings.

Brief Description of the Drawings

[0025] [Figure 1] It is a diagram showing a substrate with a grid arranged on its back side. [Figure 2] It is a top view of the grid. [Figure 3] It is a diagram showing a grid in which a wavelength conversion material is arranged in the cells of the grid. [Figure 4] It is a diagram showing a grid with a connection material arranged thereon. [Figure 5] It is a diagram showing optoelectronic semiconductor chips arranged across the cells of the grid. [Figure 6] It is a diagram showing a filling material arranged on the back side of the substrate and in which optoelectronic semiconductor chips are embedded. [Figure 7] It is a diagram showing an optoelectronic component obtained by further processing steps.

Embodiments for Carrying Out the Invention

[0026] FIG. 1 shows a schematic side cross-sectional view of a substrate 100 having a front side 101 and a back side 102 opposite the front side 101. The substrate 100 may also be referred to as a carrier. The substrate 100 is made of a transparent material, for example, glass. The substrate 100 may be formed, for example, as a glass wafer.

[0027] In a direction measured perpendicular to the front side 101 and the back side 102, the substrate 100 may have a thickness, for example, between 50 μm and 500 μm, particularly, for example, between 50 μm and 150 μm.

[0028] A grid 200 having walls 210 made of a conductive material is formed on the back side 102 of the substrate 100. The conductive material may be, for example, copper. In a direction perpendicular to the back side 102 of the substrate 100, the walls 210 of the grid 200 have a thickness 205 which may be, for example, between 2 μm and 20 μm.

[0029] Figure 2 shows a schematic perspective view of a portion of the top view of a grid 200 formed on the back side 102 of the substrate 100. Cells 220 of the grid 200 are formed between walls 210. In the example shown, the cells 220 have a substantially square shape. Cells 220 may, however, also have different rectangular or non-rectangular shapes. In the example shown in Figures 1 and 2, all walls 210 of the grid 200 are continuously connected to each other, each enclosing a cell 220 in a completely closed manner. The grid 200 may, however, consist of multiple parts that are separated from each other, each having a small number of walls. For example, the grid 200 may be subdivided into rows or columns that are separated from each other and each electrically isolated from the others. In this case, the walls 210 may not enclose the cells 220 of the grid 200 in a completely closed manner. Instead, adjacent cells 220 may, for example, be open to each other.

[0030] Figure 3 shows a schematic side cross-sectional view of a substrate 100 having a grid 200 positioned on its back side 102 in a processing state that follows the representations in Figures 1 and 2 over time. A wavelength conversion material 250 is placed in the cells 220 of the grid 200. It is advantageous that the wavelength conversion material 250 completely fills the cells 220, but is limited to the cells 220 and does not cover the walls 210 in between. The insertion of the wavelength conversion material 250 into the cells 220 of the grid 200 may be performed, for example, by a spray method (spray coating) or by doctor blading. Masking or templates may be used as optional.

[0031] In the example shown, all cells 220 of the grid 200 are filled with wavelength conversion material 250. However, it is selectively possible to leave certain cells 220 of the grid 200 unfilled with wavelength conversion material 250. These cells 220 remain empty. It is equally possible to fill different cells 220 with different wavelength conversion materials 250.

[0032] The wavelength conversion material 250 is formed to convert light having a wavelength in a first wavelength range to light having a wavelength in at least partially different wavelength ranges. For example, the wavelength conversion material 250 may be formed to convert light having a wavelength in the blue or ultraviolet spectral range to light having a wavelength in the yellow or orange spectral range.

[0033] Figure 4 shows a schematic side cross-sectional view of the processing state following the representation in Figure 3 over time. A conductive connecting material 270 is placed on the wall 210 of the grid 200. The connecting material 270 may be, for example, solder, which may consist of, for example, indium or a tin-indium alloy. The connecting material 270 may be applied by, for example, chemical vapor deposition (CVD) or sputtering, and may have a layer thickness between, for example, 200 nm and 400 nm. It is preferable that the connecting material 270 substantially completely covers the wall 210.

[0034] Figure 5 shows a schematic cross-sectional view of the processing state over time, following the representation in Figure 4. Optoelectronic semiconductor chips 300 are arranged across cells 220 of grid 200 on the back side 102 of substrate 100. Each optoelectronic semiconductor chip 300 has a front side 301 and a back side 302 opposite to the front side 301. The optoelectronic semiconductor chips 300 are positioned so that their front sides 301 face the back side 102 of substrate 100.

[0035] The optoelectronic semiconductor chips 300 are electrically connected to the grid 200 via a connecting material 270 on their front sides 301. If all parts of the grid 200 are electrically connected to each other, then the front sides 301 of all the optoelectronic semiconductor chips 300 are also electrically connected to each other. If the grid 200 comprises multiple parts that are electrically insulated from each other, then the front sides 301 of all the optoelectronic semiconductor chips 300 connected to a common part of the grid 200 are electrically connected to each other.

[0036] It is preferable that the optoelectronic semiconductor chip 300 be arranged across each cell 220 of the grid 200. However, it is also possible for individual cells 220 of the grid 200 to remain empty.

[0037] All optoelectronic semiconductor chips 300 may be of the same type, i.e., formed identically. However, it is also possible to arrange different types of optoelectronic semiconductor chips 300 across the cells 220 of the grid 200. At least a portion of the optoelectronic semiconductor chips 300 may be formed as, for example, light-emitting diode chips (LED chips). At least a portion of the optoelectronic semiconductor chips 300 may be formed as vertical emission laser chips (VCSEL chips). Optoelectronic semiconductor chips 300 formed as light-emitting diode chips or laser chips are intended to emit light on their front side 301. If wavelength conversion material 250 is placed in the cells 220 of the grid 200 assigned to such optoelectronic semiconductor chips 300, the wavelength conversion material 250 may partially or completely convert the light emitted by the optoelectronic semiconductor chips 300 to light of a different wavelength. If wavelength conversion material 250 is not placed in the assigned cells 220 of the grid 200, the light emitted by the optoelectronic semiconductor chips 300 remains unconverted.

[0038] All optoelectronic semiconductor chips 300, formed as light-emitting diode chips or laser chips, may be identically configured and intended for emitting light in the same wavelength range. However, it is also possible that the optoelectronic semiconductor chips 300 consist of semiconductor chips intended for emitting light in different wavelength ranges. For example, optoelectronic semiconductor chips 300 intended for emitting blue, red, and green light colors may be arranged across adjacent cells 220 of the grid 200, respectively. Each such pair of cells 220 and optoelectronic semiconductor chips 300 may then be combined to form a logic pixel.

[0039] At least some of the optoelectronic semiconductor chips 300 may also be formed as detector chips, for example, as photodiodes or phototransistors. In this case, it is advantageous not to fill the associated cells 220 of the grid 200 with the wavelength conversion material 250.

[0040] Each front side 301 of the optoelectronic semiconductor chip 300 has a size that matches the size of the associated cell 220 of the grid 200. It is advantageous that each front side 301 of the optoelectronic semiconductor chip 300 is slightly larger than the assigned cell 220 of the grid 200, so that the connecting material 270 placed on the wall 210 surrounding each cell 220 can electrically contact each optoelectronic semiconductor chip 300. The front side 301 of the optoelectronic semiconductor chip 300 may have an edge length in the range of, for example, between 10 μm and 50 μm. Different optoelectronic semiconductor chips 300 placed across the cells 220 of the grid 200 may have different sizes. In this case, different cells 220 of the grid 200 may also have different sizes.

[0041] It is advantageous to arrange the optoelectronic semiconductor chips 300 across the cells 220 of the grid 200 using a parallel method. Multiple or all of the optoelectronic semiconductor chips 300 are arranged simultaneously across the cells 220 of the grid 200 on the back side 102 of the substrate 100 in a common work step.

[0042] In a further processing step, one or more via structures 230 are provided on the back side 102 of the substrate 100. The via structures 230 are electrically connected to the grid 200. If the grid 200 comprises multiple portions that are electrically isolated from each other, at least one via structure 230 will be provided for each portion of the grid 200. However, it may also be advantageous to provide multiple via structures 230 for electrically continuous portions of the grid 200, and to distribute them, for example, across different regions of the grid 200.

[0043] In the example shown, the via structure 230 is positioned on the wall 210 of the grid 200 and thus electrically connected to the wall 210 of the grid 200. Other arrangements are possible, however, in a similar manner.

[0044] The via structures 230 extend from the grid 200 so as to be perpendicular to the back side 102 of the substrate 100 and away from the substrate 100. Each via structure 230 has a back side 232, which faces away from the grid 200 and is conveniently located on the same plane as the back side 302 of the optoelectronic semiconductor chip 300.

[0045] The via structure 230 may, for example, be applied to the grid 200 as a pre-fabricated element and electrically connected to the latter. For example, the via structure 230 can also be produced directly on the back side 102 of the substrate 100 or on the wall 210 of the grid 200 by an electroplating method.

[0046] Figure 6 shows a schematic cross-sectional view of the processing state following the representation in Figure 5 over time. The filler material 400 is placed on the back side 102 of the substrate 100. The optoelectronic semiconductor chip 300 is embedded in the filler material 400 such that the back side 302 of the optoelectronic semiconductor chip 300 is not covered by the filler material 400. On the other hand, the side surface 303 extending between the front side 301 and the back side 302 of the optoelectronic semiconductor chip 300 is covered by the filler material 400. The via structure 230 is also embedded in the filler material 400, and the back side 232 of the via structure 230 is not covered by the filler material 400.

[0047] The filler material 400 is a dielectric material. The filler material 400 may consist of, for example, glass. For example, the filler material 400 may be spin-on glass. The filler material 400 may be transparent or, optionally, formed to be reflective or absorbent by, for example, a mixture of reflective or absorbent particles.

[0048] The filler material 400 may be placed on the back side 102 of the substrate 100 such that the back side 302 of the optoelectronic semiconductor chip 300 and the back side 232 of the via structure 230 are initially covered by the filler material 400. In this case, a portion of the filler material 400 may then be removed to expose the back side 302 of the optoelectronic semiconductor chip 300 and the back side 232 of the via structure 230. This may be done, for example, by planarization, for example, by etching.

[0049] It is possible to place the filler material 400 in cells 220 of the grid 200 where the wavelength conversion material 250 was not previously placed. If, during the previous processing step, there is a distance remaining between the front side 301 of the optoelectronic semiconductor chip 300 placed across the cells 220 and the wavelength conversion material 250 placed in the cells 220, the filler material 400 may also fill this space.

[0050] Figure 7 shows a schematic cross-sectional view of the processing state over time, following the representation in Figure 6. The driver chip 500 is positioned across the back side 302 of the optoelectronic semiconductor chip 300, across the back side 232 of the via structure 230, and across the filler material 400. The front side 501 of the driver chip is oriented towards the back side 302 of the optoelectronic semiconductor chip 300 and the back side 232 of the via structure 230. The back side 302 of the optoelectronic semiconductor chip 300 and the back side 232 of the via structure 230 are electrically connected to contact pads provided on the front side 501 of the driver chip 500.

[0051] The driver chip 500 may be formed, for example, as a silicon chip. However, the driver chip 500 may be based on a different semiconductor system, for example, a III-V semiconductor system. The driver chip 500 comprises an electrical circuit for driving the optoelectronic semiconductor chip 300, and it may have further electronic functionality. Driving the optoelectronic semiconductor chip 300 is done via a conductive connection between the electrical contacts on the back side 302 of the optoelectronic semiconductor chip 300 and the front side 501 of the driver chip 500, as well as via contacts provided by a connecting material 270, a grid 200, and a via structure 230 between the front side 301 of the optoelectronic semiconductor chip 300 and the assigned electrical contact pads on the front side 501 of the driver chip 500.

[0052] In the processing state illustrated in Figure 7, the represented arrangement forms an optoelectronic component 10, and its production may be completed. The front side 101 of the substrate 100 forms the front side of the optoelectronic component 10. The back side 502 of the driver chip 500 is on the opposite side of the front side 501 of the driver chip 500 and forms the back side of the optoelectronic component 10. The optoelectronic component 10 is formed on the front side 101 of the substrate 100 to emit light generated by the optoelectronic semiconductor chip 300. The optoelectronic semiconductor chips 300 may be driven independently of each other to generate a two-dimensional light pattern composed of individual pixels and having a predetermined variable shape. The optoelectronic component 10 may comprise, for example, more than 10,000, more than 50,000, or even more than 100,000 optoelectronic semiconductor chips 300, and may be arranged, for example, in a rectangular matrix arrangement.

[0053] The grid 200 on the back side 102 of the substrate 100 is in electrical contact with the optoelectronic semiconductor chip 300, and advantageously simultaneously forms stops that optically shield the optoelectronic semiconductor chips 300, which are arranged across adjacent cells 220 of the grid 200, from each other. This may enable the achievement of a high contrast ratio between adjacent pixels of the optoelectronic component 10.

[0054] The substrate 100 may have one or more integrated optical functions. For example, the front side 101 of the substrate 100 may have a structure that has a photoforming effect. For example, the front side 101 of the substrate 100 may be configured as a microlens array, where one microlens is arranged across each cell 220 of a grid 200. It is convenient to apply the structure to the front side 101 of the substrate 100 before the processing step illustrated in Figure 1 is performed, in which the grid 200 is formed on the back side 102 of the substrate 100.

[0055] The production method described above can be implemented at the wafer level such that multiple identical optoelectronic components 10 are produced simultaneously in a common processing step. For this purpose, the substrate 100 is provided in a sufficiently large size, for example, as a glass wafer. Multiple identical grids 200 are formed adjacent to each other on the back side 102 of the substrate 100, for example, in a matrix arrangement. The processing steps described above are then performed simultaneously and in the same way for each of the grids 200. The filler material 400 is placed over the entire back side 102 of the substrate 100 so that the optoelectronic semiconductor chips 300 of all optoelectronic components 10 obtainable by this method are simultaneously embedded in the filler material 400. Driver chips 500 are provided in the wafer assembly 510 along with further identical driver chips 500, and are arranged and connected so that each optoelectronic semiconductor chip 300 assigned to a grid 200 is electrically connected to one of the driver chips 500. To complete the process, a step is taken to separate the optoelectronic components 10, and the substrate 100 and wafer assembly 510 are divided such that each optoelectronic component 10 comprises a portion of the substrate 100 having one grid 200 and one driver chip 500.

[0056] The present invention has been illustrated and described in detail using preferred and illustrative embodiments. However, the present invention is not limited to the examples disclosed. Other modifications can be derived by those skilled in the art. [Explanation of Symbols]

[0057] 10 Optoelectronic Components 100 circuit boards 101 Front side 102 Reverse side 200 grids 205 Thickness 210 Wall 220 cells 230 via structure 232 Reverse side 250 wavelength conversion materials 270 Connecting materials 300 Optoelectronic Semiconductor Chips 301 Front side 302 Reverse side 303 Side view 400 Filling material 500 driver chips 501 Front side 502 Reverse side 510 wafer assembly

Claims

1. A method for producing optoelectronic components (10), - A step of forming a grid (200) having walls (210) made of a conductive material on the back side (102) of a transparent substrate (100), wherein cells (220) of the grid (200) are formed between the walls (210), - The step of placing a wavelength conversion material (250) in at least one cell (220) of the grid (200), - A step of arranging optoelectronic semiconductor chips (300) across the cells (220) of the grid (200), wherein each optoelectronic semiconductor chip (300) has a front side (301) and a back side (302), the front side (301) of the optoelectronic semiconductor chip (300) is oriented toward the back side (102) of the substrate (100), and the optoelectronic semiconductor chip (300) is electrically connected to the grid (200), - A step of placing a filler material (400) on the back side (102) of the substrate (100), wherein the optoelectronic semiconductor chip (300) is embedded in the filler material (400) such that the back side (302) of the optoelectronic semiconductor chip (300) is not covered by the filler material (400), - A step of arranging a driver chip (500) across the back side (302) of the optoelectronic semiconductor chip (300), wherein the optoelectronic semiconductor chip (300) is electrically connected to the driver chip (500), Methods that include...

2. Before the step of placing the filling material (400), - A step of providing via structures (230) on the back side (102) of the substrate (100) that are electrically connected to the grid (200), wherein the via structures (230) are embedded in the filler material (400) such that the back side (232) of the via structures (230) is not covered by the filler material (400), and the via structures (230) are electrically connected to the driver chip (500), The method according to claim 1, wherein the procedure is carried out.

3. The method according to claim 1 or 2, wherein the wavelength conversion material (250) is not placed in at least one cell (220) of the grid (200).

4. The method according to claim 3, wherein the filler material (400) is also placed in the cell (220) where the wavelength conversion material (250) is not placed.

5. The method according to any one of claims 1 to 4, wherein different types of optoelectronic semiconductor chips (300) are arranged across the cells (220) of the grid (200).

6. After the step of placing the filler material (400) on the back side (102) of the substrate (100), - A step of removing a portion of the filler material (400) in order to expose the back side (302) of the optoelectronic semiconductor chip (300), The method according to any one of claims 1 to 5, wherein the method is implemented.

7. Before the step of arranging the optoelectronic semiconductor chip (300), - A step of placing a conductive connecting material (270) on the wall (210) of the grid (200), wherein the optoelectronic semiconductor chip (300) is electrically connected to the grid (200) via the connecting material (270), The method according to any one of claims 1 to 6, wherein the method is implemented.

8. The method according to any one of claims 1 to 7, wherein the grid (200) is formed with a thickness (205) between 2 μm and 20 μm.

9. In addition to the grid (200), another identical grid (200) is formed on the back side (102) of the substrate (100). The above processing steps are also performed for each of the further grids (200), The driver chip (500) is provided in the wafer assembly (510) together with an identical further driver chip (500). The optoelectronic semiconductor chip (300) assigned to one of the further grids (200) is electrically connected to one of the further driver chips (500), The method described above is - Steps of separating the optoelectronic component (10) and further identical optoelectronic components (10) into individual units, The method according to any one of claims 1 to 8, further comprising:

10. Optoelectronic component (10), It comprises a transparent substrate (100) having a back side (102), A grid (200) having walls (210) made of a conductive material is formed on the back side (102) of the substrate (100), and cells (220) of the grid (200) are formed between the walls (210). A wavelength conversion material (250) is placed in at least one cell (220) of the grid (200), Optoelectronic semiconductor chips (300) are arranged across the cells (220) of the grid (200), Each optoelectronic semiconductor chip (300) has a front side (301) and a back side (302), The front side (301) of the optoelectronic semiconductor chip (300) is oriented toward the back side (102) of the substrate (100), The optoelectronic semiconductor chip (300) is electrically connected to the grid (200), The filling material (400) is placed on the back side (102) of the substrate (100). The optoelectronic semiconductor chip (300) is embedded in the filler material (400) such that the back side (302) of the optoelectronic semiconductor chip (300) is not covered by the filler material (400). The driver chip (500) is arranged across the back side (302) of the optoelectronic semiconductor chip (300). An optoelectronic component (10) in which the optoelectronic semiconductor chip (300) is electrically connected to the driver chip (500).

11. The optoelectronic component (10) according to claim 10, wherein the optoelectronic component (10) comprises more than 10,000 optoelectronic semiconductor chips (300), more than 50,000 optoelectronic semiconductor chips (300), and more than 100,000 optoelectronic semiconductor chips (300).

12. The optoelectronic component (10) according to claim 10 or 11, wherein at least one of the optoelectronic semiconductor chips (300) is formed as a light-emitting diode chip, a VCSEL chip, or a detector chip.

13. The optoelectronic component (10) according to any one of claims 10 to 12, wherein the filler material (400) is spin-on glass.

14. The optoelectronic component (10) according to any one of claims 10 to 13, wherein the filler material (400) is reflective or absorbent.

15. The optoelectronic component (10) according to any one of claims 10 to 14, wherein the driver chip (500) is a silicon chip.

16. The optoelectronic component (10) according to any one of claims 10 to 15, wherein the substrate (100) is made of glass.

17. The optoelectronic component (10) according to any one of claims 10 to 16, wherein the front side (101) of the substrate (100) is structured.

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