Semiconductor equipment scrubber

Abstract

The present invention relates to a semiconductor mounting scrubber capable of effectively scrubbing gases generated after a semiconductor manufacturing process. The semiconductor mounting scrubber includes an absorption tower for separating the gas mixture into a first gas and a second gas; a housing within the absorption tower that defines a first scrubbing space through which a first scrubbing process is performed; a first tray connected to a first inner wall of the housing and extending in a first direction intersecting the first inner wall; a first tray hole penetrating the first tray in a second direction intersecting the first direction, through which the gas mixture passes; and a solution supply nozzle on the upper surface of the first tray that provides a first scrubbing solution for performing the first scrubbing process, wherein the gas mixture passes through the first tray hole and rises in the second direction.

Description

Technical Field

[0001] The present invention relates to a scrubber for semiconductor equipment. Specifically, it relates to a scrubber for semiconductor equipment that improves scrubbing efficiency by increasing the contact area between the scrubbing solution and the gas.

Background Art

[0002] In modern industries, many types of air pollutants are generated. In particular, in the process of manufacturing semiconductor devices, various chemical substances are used. Many of these have a very low allowable concentration for the human body. Therefore, in the semiconductor field, it is a very important issue to remove and discharge air pollutants in the exhaust gas.

[0003] Currently used air pollution prevention facilities include dust collectors, scrubbers, etc., and these are installed considering their efficiency depending on the type of pollutants. In the case of scrubbers, since they can simultaneously treat dust, exhaust gas, and high-temperature gas, they are widely used.

[0004] Specifically, scrubbers are classified and used as dry type, wet type, plasma type, etc. according to the treatment method of the exhaust gas. The wet scrubber consists of a process of bringing the exhaust gas into contact with a liquid and dissolving the water-soluble components in the gas into the liquid phase.

[0005] In a wet scrubber, usually, a cleaning liquid is used to effectively remove the harmful components of the exhaust gas. The cleaning liquid removes the harmful components through chemical reactions such as neutralization when contacting the harmful components, and the one that has the best chemical reaction with the harmful components of the exhaust gas must be selected. The performance of the wet scrubber is determined by whether the solution containing the cleaning liquid can efficiently contact the exhaust gas. Therefore, conventionally, a method has been taken to install a filler so that the solution containing the cleaning liquid and the exhaust gas can be sufficiently contacted, and to install a spray nozzle for supplying water with small particles.

[0006] Recently, research has been conducted on technologies that can improve the contact area between the scrubbing solution containing the cleaning fluid and the emitted gas. [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] The technical problem that this invention aims to solve is to provide a scrubber for semiconductor equipment that improves scrubbing efficiency by improving the contact area between the scrubbing solution and the gas.

[0008] The problems that this invention aims to solve are not limited to those mentioned above, and other problems not mentioned will be clearly understood by an ordinary person of the art from the following description. [Means for solving the problem]

[0009] A semiconductor mounting scrubber according to some embodiments of the present invention for achieving the above technical problems can scrub a gas mixture provided from a semiconductor chamber in which a semiconductor process is carried out. The semiconductor mounting scrubber includes an absorption tower for separating the gas mixture into a first gas and a second gas; a housing within the absorption tower that defines a first scrubbing space in which a first scrubbing process is carried out; a first tray connected to a first inner wall of the housing and extending in a first direction intersecting the first inner wall; a first tray hole penetrating the first tray in a second direction intersecting the first direction through which the gas mixture passes; and a solution supply nozzle on the upper surface of the first tray that provides a first scrubbing solution for carrying out the first scrubbing process, wherein the gas mixture passes through the first tray hole and rises in the second direction.

[0010] In some embodiments, the first scrubbing step includes the gas mixture passing through the first tray holes and rising in the second direction to generate bubbles, and at least a portion of the first gas dissolving in the first scrubbing solution at a surface in contact with the surface of the bubbles and the first scrubbing solution.

[0011] The generation of bubbles within the scrubbing solution increases the contact area between the gas and the scrubbing solution. Therefore, the efficiency of the scrubbing process can be improved.

[0012] A semiconductor scrubber according to some embodiments further includes: a first pipe having one end connected to the semiconductor chamber and the other end connected to the absorption tower; a gas inlet connected to the first pipe through which the gas mixture is introduced into the absorption tower; a gas outlet connected to the absorption tower through which the gas mixture is discharged to the outside of the absorption tower; a second scrubbing space defined by a first inner wall of the absorption tower and a first outer wall of the housing facing the first inner wall of the absorption tower; and a first showerhead installed above the second scrubbing space to supply a second scrubbing solution to the second scrubbing space, wherein one side of the second scrubbing space is connected to the gas inlet and the other side of the second scrubbing space is connected to the first scrubbing space.

[0013] In some embodiments, the gas outlet is connected to the first scrubbing space and provides negative pressure to the first scrubbing space through the gas outlet.

[0014] In some embodiments, the first scrubbing space and the second scrubbing space are connected to each other at the bottom of the absorption tower, and a second scrubbing step is performed in the second scrubbing space, the second scrubbing step comprising the gas mixture being introduced into the gas inlet and flowing in the second direction in the second scrubbing space, while at least a portion of the first gas is dissolved by the second scrubbing solution.

[0015] A semiconductor equipment scrubber according to some embodiments further includes a third scrubbing space defined by a second inner wall of the absorption tower intersecting with a first inner wall of the absorption tower, and a second outer wall of the housing facing the second inner wall of the absorption tower, and a second showerhead installed above the third scrubbing space for supplying a third scrubbing solution to the third scrubbing space.

[0016] A semiconductor equipment scrubber according to some embodiments further includes a fourth scrubbing space defined by a third inner wall of the absorption tower and a third outer wall of the housing facing the third inner wall of the absorption tower, and a third showerhead installed above the fourth scrubbing space and supplying a fourth scrubbing solution to the fourth scrubbing space, wherein the first inner wall connects the second inner wall and the third inner wall to each other.

[0017] A semiconductor mounting scrubber according to some embodiments further includes a second tray connected to a second inner wall of the housing, extending in the first direction intersecting the second inner wall of the housing and spaced apart from the first tray in the second direction, and a second tray hole penetrating the second tray in the second direction through which the gas mixture passes, wherein the second inner wall of the housing faces the first inner wall of the housing, and the gas mixture rises through the second tray hole.

[0018] A semiconductor mounting scrubber according to some embodiments further includes a first tray wall connected to one end of the first tray and projecting in the second direction from the upper and lower surfaces of the first tray, the first tray wall including a portion projecting from the upper surface of the first tray, the first scrubbing solution flowing from the upper surface of the first tray to the projecting portion and beyond the projecting portion toward the lower part of the absorption tower.

[0019] In some embodiments, at least a portion of the first gas is dissolved in the first scrubbing solution, and the first gas includes a hydrophilic gas.

[0020] Specific details of other embodiments are included in the description of the invention and the drawings.

Advantages of the Invention

[0021] The scrubber for semiconductor equipment of the present invention includes at least one tray. Tray holes penetrating the tray are formed inside the tray. Bubbles can be formed in the scrubbing solution disposed on the upper surface of the tray while gas passes through the tray holes. By forming the bubbles, the contact area between the scrubbing solution and the gas is improved. Since the contact area is improved, more hydrophilic gas in the gas can be dissolved in the scrubbing solution. Therefore, the gas from which contaminants have been removed can be discharged to the outside of the scrubber for semiconductor equipment.

Brief Description of the Drawings

[0022] [Figure 1] It is a diagram for briefly explaining a semiconductor equipment system including a scrubber for semiconductor equipment according to some embodiments of the present invention. [Figure 2] It is an exemplary perspective view for explaining the scrubber for semiconductor equipment of FIG. 1. [Figure 3] It is an exemplary cross-sectional view for explaining the scrubber for semiconductor equipment of FIG. 1. [Figure 4] It is an exemplary plan view for explaining the scrubber for semiconductor equipment of FIG. 1. [Figure 5] It is an enlarged view of the P region in FIG. 3. [Figure 6] It is a diagram for explaining a scrubber for semiconductor equipment according to some other embodiments of the present invention. [Figure 7] It is a diagram for explaining a scrubber for semiconductor equipment according to some other embodiments of the present invention. [Figure 8] It is a diagram for explaining a scrubber for semiconductor equipment according to some other embodiments of the present invention. [Figure 9]It is a diagram for explaining a scrubber for semiconductor equipment according to some other embodiments of the present invention. [Figure 10] It is a diagram for explaining a scrubber for semiconductor equipment according to some other embodiments of the present invention. [Figure 11] It is a diagram for explaining a scrubber for semiconductor equipment according to some other embodiments of the present invention. [Figure 12] It is a diagram for explaining an operation method of a scrubber for semiconductor equipment according to some embodiments of the present invention. [Figure 13] It is a diagram for explaining an operation method of a scrubber for semiconductor equipment according to some embodiments of the present invention.

Best Mode for Carrying Out the Invention

[0023] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described in detail later together with the accompanying drawings. However, the present invention is not limited to the embodiments described below, and can be realized in various different forms. Merely, these embodiments are provided so that the disclosure of the present invention becomes complete, and to fully inform those with ordinary knowledge in the technical field to which the present invention pertains of the scope of the invention. The present invention is only defined by the scope of the claims. The same reference numerals throughout the specification refer to the same components.

[0024] Also, the terms used in this specification are those used for explaining the embodiments, and are not intended to limit and / or restrict the disclosed invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "including" or "having" are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude in advance the presence or addition possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0025] Furthermore, terms including ordinal numbers, such as “first,” “second,” etc., as used herein, may be used to describe various components, but the components are not limited by such terms, and the terms are used solely for the purpose of distinguishing one component from another. For example, as long as it does not deviate from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The terms “and / or” include a combination of multiple related descriptions or any one of multiple related descriptions.

[0026] On the other hand, the terms "front," "rear," "upper," "lower," "front end," and "bottom end" used in the following explanation are defined based on the drawings, and these terms do not restrict the shape and position of each component.

[0027] The terms used herein are for illustrative purposes only and are not intended to limit the invention. In this specification, the singular form includes the plural form unless otherwise specified in the text. The terms “comprises” and / or “comprising” as used in this specification do not preclude the presence or addition of one or more other components, stages, operations and / or elements other than those mentioned.

[0028] Unless otherwise defined, all terms used herein (including technical and scientific terms) should be used in a way that is commonly understood by a person of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries should not be interpreted ideally or excessively unless explicitly defined otherwise.

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In the description with reference to the attached drawings, the same reference numeral will be assigned to identical or corresponding components, regardless of the reference numerals in the drawings, and redundant explanations therein will be omitted.

[0030] Below, with reference to Figure 1, a semiconductor equipment system including a semiconductor equipment scrubber according to several embodiments of the present invention will be described. Figure 1 is a diagram for briefly illustrating a semiconductor equipment system including a semiconductor equipment scrubber according to several embodiments of the present invention.

[0031] Referring to Figure 1, a semiconductor equipment system 1000 according to some embodiments of the present invention may include a semiconductor chamber 10, a semiconductor equipment scrubber 20, an exhaust gas discharge chamber 30, and a scrubbing solution discharge chamber 40.

[0032] The semiconductor chamber 10 may be a chamber in which semiconductor processes are carried out. In order to manufacture a semiconductor device, various semiconductor processes must be carried out on a wafer. For example, a film must be deposited on the wafer (deposition process), and the film must be etched (etching process) to form the patterns to be included in the semiconductor device. Furthermore, after the deposition process and / or etching process is carried out, a cleaning process must be performed to clean the wafer and / or the semiconductor chamber 10.

[0033] The deposition process may include, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD), and / or atomic layer deposition (ALD). The etching process may include dry etching, wet etching, and / or ashing. The cleaning process may include wet cleaning, dry cleaning, and / or vapor cleaning.

[0034] In other embodiments, the deposition step, the etching step, and / or the cleaning step may be performed simultaneously.

[0035] When semiconductor manufacturing processes are carried out in the semiconductor chamber 10, various by-products may be generated. These by-products may contain substances harmful to the human body, and if such by-products contain such substances, they must be removed and discharged. The semiconductor equipment scrubber 20 can be used to remove substances harmful to the human body from the by-products generated in the semiconductor chamber 10.

[0036] A first pipe 11 may be positioned between the semiconductor chamber 10 and the semiconductor equipment scrubber 20. One end of the first pipe 11 may be connected to the semiconductor chamber 10, and the other end of the first pipe 11 may be connected to the semiconductor equipment scrubber 20. A gas mixture Gm discharged from the semiconductor chamber 10 may be supplied to the semiconductor equipment scrubber 20 via the first pipe 11 (see reference numeral 50 in the drawing).

[0037] In some embodiments, a first valve 12 may be connected to the first piping 11. The first valve 12 can regulate the pressure and flow rate of the gas mixture Gm supplied to the semiconductor equipment scrubber 20 via the first piping 11.

[0038] The semiconductor equipment scrubber 20 can scrub a gas mixture Gm supplied from the semiconductor chamber 10 where the semiconductor process is carried out. For example, the gas mixture Gm may include a first gas G1 and a second gas G2. The first gas G1 may contain substances harmful to the human body, and the second gas G2 may not contain substances harmful to the human body. As an example, the first gas G1 may be IPA (isopropyl alcohol) and / or ammonia. The semiconductor equipment scrubber 20 can separate the first gas G1 and the second gas G2 from the gas mixture Gm.

[0039] The first gas G1 can be dissolved in a scrubbing solution and stored in the scrubbing solution discharge chamber 40. The second gas G2 can be stored in the exhaust gas discharge chamber 30. A detailed description of the semiconductor equipment scrubber 20 will be given later with reference to Figures 2 to 12.

[0040] The scrubbing solution discharge chamber 40 can be connected to the semiconductor equipment scrubber 20. The scrubbing solution discharge chamber 40 and the semiconductor equipment scrubber 20 can be connected to each other via a second pipe 21. One end of the second pipe 21 can be connected to the semiconductor equipment scrubber 20, and the other end of the second pipe 21 can be connected to the scrubbing solution discharge chamber 40. Through the second pipe 21, the scrubbing solution in which the first gas G1 is dissolved can be moved from the semiconductor equipment scrubber 20 to the scrubbing solution discharge chamber 40 (see reference numeral 60 in the drawing).

[0041] In some embodiments, a second valve 22 may be connected to the second piping 21. The second valve 22 can regulate the pressure and flow rate of the scrubbing solution containing the first gas G1, which is supplied to the scrubbing solution discharge chamber 40 via the second piping 21.

[0042] The exhaust gas discharge chamber 30 can be connected to the semiconductor equipment scrubber 20. The exhaust gas discharge chamber 30 and the semiconductor equipment scrubber 20 can be connected to each other via a third pipe 23. One end of the third pipe 23 can be connected to the semiconductor equipment scrubber 20, and the other end of the third pipe 23 can be connected to the exhaust gas discharge chamber 30. Through the third pipe 23, the second gas G2 can move from the semiconductor equipment scrubber 20 to the exhaust gas discharge chamber 30 (see reference numeral 70 in the drawing). The second gas G2 may be a gas mixture Gm from which the first gas G1 has been removed.

[0043] In some embodiments, a third valve 24 may be connected to the third piping 23. The third valve 24 can regulate the pressure and flow rate of the second gas G2 supplied to the exhaust gas discharge chamber 30 via the third piping 23.

[0044] In some embodiments, the semiconductor equipment scrubber 20 may further include a gas inlet 25 and a gas outlet 26. A gas mixture Gm can be introduced into the semiconductor equipment scrubber 20 through the gas inlet 25. A second gas G2 can be discharged to the outside of the semiconductor equipment scrubber 20 through the gas outlet 26. In Figure 1, only the second gas G2 is shown to be discharged through the gas outlet 26, but the technical concept of the present invention is not limited thereto. Of course, a portion of the first gas G1 may be included in the gas discharged to the outside of the semiconductor equipment scrubber 20.

[0045] Although not shown in the figures, scrubbers 20 according to some embodiments of the present invention may be used in a variety of industrial fields. For example, scrubbers 20 according to some embodiments of the present invention can be used in the plant industry, battery industry, thermal power plant industry, steel industry, and / or chemical industry. Preferably, scrubbers 20 according to some embodiments of the present invention may be used in the oil and gas plant industry.

[0046] When the scrubber 20 according to some embodiments of the present invention is used in the aforementioned industrial field, contaminants generated after the process can be effectively separated and removed. Therefore, the problem of environmental pollution can be reduced.

[0047] Below, with reference to Figures 2 to 5, several embodiments of the present invention, including semiconductor equipment scrubbers, will be described in detail.

[0048] Figure 2 is an exemplary perspective view illustrating the semiconductor equipment scrubber of Figure 1. Figure 3 is an exemplary cross-sectional view illustrating the semiconductor equipment scrubber of Figure 1. Figure 4 is an exemplary plan view illustrating the semiconductor equipment scrubber of Figure 1. Figure 5 is an enlarged view of region P in Figure 3.

[0049] Referring to Figures 2 to 5, a semiconductor equipment scrubber 20 according to some embodiments of the present invention may include an absorption tower 210, a housing 220, a first tray 230, a second tray 240, a third tray 250, a solution supply nozzle 227, and a demister 260.

[0050] First, an absorption tower 210 may be provided. The absorption tower 210 may be an external housing for a semiconductor equipment scrubber 20. A gas mixture (Gm in Figure 1) may be provided inside the absorption tower 210, and inside the absorption tower 210, the gas mixture (Gm in Figure 1) may be separated into a first gas (G1 in Figure 1) and a second gas (G2 in Figure 2). The inside of the absorption tower 210 may include a first scrubbing space 225 and a second scrubbing space 215a. A first scrubbing process may be carried out in the first scrubbing space 225, and a second scrubbing process may be carried out in the second scrubbing space 215a.

[0051] In some embodiments, the absorption tower 210 may include a first inner wall 210ISW1, a second inner wall 210ISW2, a third inner wall 210ISW3, and a fourth inner wall (not shown).

[0052] The first inner wall 210ISW1 of the absorption tower can face the fourth inner wall of the absorption tower in a first direction D1, and the second inner wall 210ISW2 of the absorption tower can face the third inner wall 210ISW3 of the absorption tower in a third direction D3. The first inner wall 210ISW1 of the absorption tower can be connected to the second inner wall 210ISW2 and the third inner wall 210ISW3 of the absorption tower. The first and second scrubbing processes can be carried out in the space defined by the first inner wall 210ISW1, the second inner wall 210ISW2, the third inner wall 210ISW3, and the fourth inner wall of the absorption tower.

[0053] The housing 220 may be located inside the absorption tower 210. The housing 220 can define a first scrubbing space 225, within which a first scrubbing process may be carried out. A detailed description of the first scrubbing process will be given later.

[0054] In some embodiments, the housing 220 may include a first inner wall 220ISW1, a second inner wall 220ISW2, a third inner wall 220ISW3, and a fourth inner wall 220ISW4. The first inner wall 220ISW1, the second inner wall 220ISW2, the third inner wall 220ISW3, and the fourth inner wall 220ISW4 of the housing may define a first scrubbing space 225.

[0055] In some embodiments, the inner wall of the housing 220 may extend in a second direction D2. The second direction D2 may be perpendicular to the ground. The first inner wall 220ISW1 of the housing 220 may be separated from the fourth inner wall 220ISW4 of the housing 220 in the first direction D1. The second inner wall 220ISW2 of the housing 220 may be separated from the third inner wall 220ISW3 of the housing 220 in the third direction D3. The first inner wall 220ISW1 of the housing 220 may face the fourth inner wall 220ISW4 of the housing 220. The second inner wall 220ISW2 of the housing 220 may face the third inner wall 220ISW3 of the housing 220.

[0056] In this specification, the first direction D1 and the third direction D3 can intersect each other. The first direction D1 and the second direction D2 can intersect each other. The second direction D2 and the third direction D3 can intersect each other. That is, in this specification, the first direction D1, the second direction D2, and the third direction D3 can be substantially perpendicular to each other.

[0057] A first tray 230, a second tray 240, and a third tray 250 may be arranged inside the housing 220. That is, the first tray 230, the second tray 240, and the third tray 250 may be arranged in the first scrubbing space 225.

[0058] In Figures 2 to 5, the semiconductor scrubber 20 of the present invention is shown to include three trays, but the technical concept of the present invention is not limited thereto. Semiconductor scrubbers 20 according to some embodiments of the present invention may include at least one or more trays. That is, one or two trays may be arranged inside the housing 220, and of course, four or more trays may be arranged.

[0059] The first tray 230 may be positioned at the bottom of the trays arranged inside the housing 220. One end of the first tray 230 may be connected to and fixed to the inner wall of the housing 220. Specifically, one end of the first tray 230 may be connected to and fixed to the first inner wall 220ISW1 of the housing 220. The first tray 230 may be connected to the first inner wall 220ISW1 of the housing 220 and extend in a first direction D1 that intersects the first inner wall 220ISW1. More specifically, the first tray 230 may be placed on a plane to which the first direction D1 and the third direction D3 extend.

[0060] Similarly, the first tray 230 can be connected to and fixed to the second inner wall 220ISW2 and the third inner wall 220ISW3 of the housing 220.

[0061] However, the other end of the first tray 230 is not connected to and fixed to the fourth inner wall 220ISW4 of the housing 220. The other end of the first tray 230 can be separated from the fourth inner wall 220ISW4 of the housing 220 in the first direction D1. The space from the other end of the first tray 230 to the fourth inner wall 220ISW4 of the housing 220 may be a space through which the first scrubbing solution SSL, described later, flows downward (for example, in the second direction D2).

[0062] Some embodiments of the semiconductor mounting scrubber 20 may further include a first tray hole 230H and a first tray wall 235.

[0063] The first tray hole 230H may be formed inside the first tray 230. The first tray hole 230H may extend from the bottom surface of the first tray 230 to the top surface of the first tray 230. That is, the first tray hole 230H may penetrate the first tray 230 in a second direction D2. The gas mixture (Gm in Figure 1) can rise in the second direction D2 by passing through the first tray hole 230H (see reference numeral 230u).

[0064] The upper surface of the first tray 230 can face the demister 260, which will be described later, and the lower surface of the first tray 230 can face the scrubbing solution storage unit 270, which will be described later.

[0065] The first tray wall 235 can be attached to the other end of the first tray 230. The first tray wall 235 can be interposed between the first tray 230 and the fourth inner wall 220ISW4 of the housing 220. The first tray wall 235 can extend in a second direction D2. In some embodiments, a portion of the first tray wall 235 can project from the upper surface of the first tray 230 in the second direction D2. Another portion of the first tray wall 235 can project from the lower surface of the first tray 230 in the second direction D2.

[0066] In some embodiments, at least a portion of the portion of the first tray wall 235 that protrudes in the second direction D2 from the lower surface of the first tray 230 may be located within the scrubbing solution storage section 270, but the technical concept of the present invention is not limited thereto.

[0067] The second tray 240 may be placed on the first tray 230. Specifically, the second tray 240 may be placed on the upper surface of the first tray 230. One end of the second tray 240 may be connected to and fixed to the inner wall of the housing 220. Specifically, one end of the second tray 240 may be connected to and fixed to the fourth inner wall 220ISW4 of the housing 220. The second tray 240 may be connected to the fourth inner wall 220ISW4 of the housing 220 and extend in a first direction D1 that intersects the fourth inner wall 220ISW4. More specifically, the second tray 240 may be placed on a plane to which the first direction D1 and the third direction D3 extend.

[0068] Similarly, the second tray 240 can be connected to and fixed to the second inner wall 220ISW2 and the third inner wall 220ISW3 of the housing 220.

[0069] However, the other end of the second tray 240 is not connected to and fixed to the first inner wall 220ISW1 of the housing 220. The other end of the second tray 240 can be separated from the first inner wall 220ISW1 of the housing 220 in a first direction D1. The space from the other end of the second tray 240 to the first inner wall 220ISW1 of the housing 220 may be a space through which the first scrubbing solution SSL, described later, flows downward (for example, in a second direction D2).

[0070] Some embodiments of the semiconductor mounting scrubber 20 may further include a second tray hole 240H and a second tray wall 245.

[0071] The second tray hole 240H may be formed inside the second tray 240. The second tray hole 240H may extend from the bottom surface of the second tray 240 to the top surface of the second tray 240. The second tray hole 240H may penetrate the second tray 240 in the second direction D2. The gas mixture (Gm in Figure 1) can rise in the second direction D2 by passing through the second tray hole 240H.

[0072] The top surface of the second tray 240 can face the demister 260, which will be described later, and the bottom surface of the second tray 240 can face the top surface of the first tray 230.

[0073] The second tray wall 245 can be attached to the other end of the second tray 240. The second tray wall 245 can be interposed between the second tray 240 and the first inner wall 220ISW1 of the housing 220. The second tray wall 245 can extend in a second direction D2. In some embodiments, a portion of the second tray wall 245 can project from the upper surface of the second tray 240 in the second direction D2. Another portion of the second tray wall 245 can project from the lower surface of the second tray 240 in the second direction D2.

[0074] In some embodiments, the first tray 230 and the second tray 240 do not completely overlap in the second direction D2. The first scrubbing solution SSL that flows down over the second tray wall 245 may be discharged onto the upper surface of the first tray 230. In other words, the centers of the first tray 230 and the second tray 240 may be offset from each other.

[0075] The third tray 250 may be placed on the second tray 240. Specifically, the third tray 250 may be placed on the upper surface of the second tray 240. One end of the third tray 250 may be connected to and fixed to the inner wall of the housing 220. Specifically, one end of the third tray 250 may be connected to and fixed to the first inner wall 220ISW1 of the housing 220. The third tray 250 may be connected to the first inner wall 220ISW1 of the housing 220 and extend in a first direction D1 intersecting the first inner wall 220ISW1. More specifically, the third tray 250 may be placed on a plane extending in the first direction D1 and the third direction D3. Similarly, the third tray 250 may be connected to and fixed to the second inner wall 220ISW2 and the third inner wall 220ISW3 of the housing 220.

[0076] However, the other end of the third tray 250 is not connected to and fixed to the fourth inner wall 220ISW4 of the housing 220. The other end of the third tray 250 can be separated from the fourth inner wall 220ISW4 of the housing 220 in the first direction D1. The space from the other end of the third tray 250 to the fourth inner wall 220ISW4 of the housing 220 may be a space through which the first scrubbing solution SSL, described later, flows downward (for example, in the second direction D2).

[0077] Some embodiments of the semiconductor mounting scrubber 20 may further include a third tray hole 250H and a third tray wall 255.

[0078] The third tray hole 250H may be formed inside the third tray 250. The third tray hole 250H may extend from the bottom surface of the third tray 250 to the top surface of the third tray 250. The third tray hole 250H may penetrate the third tray 250 in the second direction D2. The gas mixture (Gm in Figure 1) can rise in the second direction D2 by passing through the third tray hole 250H.

[0079] The top surface of the third tray 250 can face the demister 260, which will be described later, and the bottom surface of the third tray 250 can face the top surface of the second tray 240.

[0080] The third tray wall 255 can be attached to the other end of the third tray 250. The third tray wall 255 can be interposed between the third tray 250 and the fourth inner wall 220ISW4 of the housing 220. The third tray wall 255 can extend in a second direction D2. In some embodiments, a portion of the third tray wall 255 can project from the upper surface of the third tray 250 in the second direction D2. Another portion of the third tray wall 255 can project from the lower surface of the third tray 250 in the second direction D2.

[0081] In some embodiments, the third tray 250 and the second tray 240 do not completely overlap in the second direction D2. The first scrubbing solution SSL that flows down over the third tray wall 255 can be discharged onto the upper surface of the second tray 240. In other words, the centers of the third tray 250 and the second tray 240 can be offset from each other.

[0082] However, the third tray 250 and the first tray 230 can completely overlap in the second direction D2. That is, the centers of the third tray 250 and the first tray 230 can overlap in the second direction D2.

[0083] In some embodiments, the first to third tray holes 230H, 240H, and 250H can completely overlap in the second direction D2. However, the technical concept of the present invention is not limited thereto. The first to third tray holes 230H, 240H, and 250H do not have to completely overlap in the second direction D2, or they may only partially overlap.

[0084] The solution supply nozzle 227 may be located inside the housing 220. The solution supply nozzle 227 may be connected to the absorption tower 210 and the upper part of the housing 220 and may extend in a second direction D2. The solution supply nozzle 227 may be connected to piping (not shown) installed outside the absorption tower 210. The solution supply nozzle 227 can supply the first scrubbing solution SSL into the housing 220. The first scrubbing solution SSL may be supplied from the solution supply nozzle 227 and discharged onto the upper surface of the third tray 250.

[0085] The first scrubbing solution SSL may be, for example, water. However, the technical concept of the present invention is not limited thereto.

[0086] The first scrubbing solution SSL is discharged onto the upper surface of the third tray 250 and can flow from the upper surface of the third tray 250 toward the third tray wall 255 while the first scrubbing process is performed. At this time, the first scrubbing solution SSL does not flow downward through the third tray holes 250H. The first scrubbing solution SSL can flow beyond the third tray wall 255 toward the lower part of the absorption tower 210.

[0087] The first scrubbing solution SSL that has passed over the third tray wall 255 is again discharged onto the upper surface of the second tray 240. The first scrubbing solution SSL can flow from the upper surface of the second tray 240 towards the second tray wall 245 while the first scrubbing process is being carried out. At this time, the first scrubbing solution SSL does not flow downward through the second tray holes 240H. The first scrubbing solution SSL can flow over the second tray wall 245 to the lower part of the absorption tower 210.

[0088] Similarly, the first scrubbing solution SSL that has passed over the second tray wall 245 is again discharged onto the upper surface of the first tray 230. The first scrubbing solution SSL can flow from the upper surface of the first tray 230 towards the first tray wall 235 while the first scrubbing process is being carried out. At this time, the first scrubbing solution SSL does not flow downward through the first tray holes 230H. The first scrubbing solution SSL can flow beyond the first tray wall 235 to the lower part of the absorption tower 210.

[0089] Finally, the first scrubbing solution SSL that has passed over the first tray wall 235 can be stored in a scrubbing solution storage unit 270 located at the bottom of the absorption tower 210. The scrubbing solution storage unit 270 can store contaminated scrubbing solutions. For example, the contaminated scrubbing solution may be a solution in which the first gas (G1 in Figure 1) is dissolved in the water. More specifically, the contaminated scrubbing solution may be a solution in which the first gas (G1 in Figure 1) is dissolved in the water.

[0090] In some embodiments, the first gas may be a hydrophilic gas. For example, the first gas may be IPA (isopropyl alcohol) and / or ammonia, but the technical concept of the present invention is not limited thereto.

[0091] The demister 260 may be located on top of the absorption tower 210. The demister 260 may be located on top of the housing 220. The demister 260 may be used to remove moisture from the gas after the first scrubbing process has been performed. That is, the demister 260 may be used to remove water from the gas mixture of the water and the second gas (G2 in Figure 1) after the first scrubbing process has been performed.

[0092] The demister 260 can be connected to the gas outlet 26. The gas that has passed through the demister 260 and been filtered can be discharged to the outside of the absorption tower 210 via the gas outlet 26.

[0093] When using the semiconductor equipment scrubber 20 according to some embodiments, gases harmful to the human body can be dissolved in the scrubbing solution. Therefore, gases harmful to the human body can be removed from by-products generated after the semiconductor process and discharged to the outside of the absorption tower 210.

[0094] Some semiconductor mounting scrubbers 20 according to certain embodiments may include a second scrubbing space 215a.

[0095] The second scrubbing space 215a may be defined by the inner wall of the absorption tower 210 and the outer wall of the housing 220. For example, the second scrubbing space 215a may be defined by the first inner wall 210ISW1 of the absorption tower 210, the second inner wall 210ISW2 of the absorption tower 210, the third inner wall 210ISW3 of the absorption tower 210, and the first outer wall 220OSW1 of the housing 220.

[0096] The first inner wall 210ISW1 of the absorption tower 210 can face the first outer wall 220OSW1 of the housing 220. The first outer wall 220OSW1 of the housing 220 can face the first inner wall 220ISW1 of the housing 220.

[0097] In some embodiments, the housing 220 may further include a second outer wall 220OSW2, a third outer wall 220OSW3, and a fourth outer wall 220OSW4. The second outer wall 220OSW2 of the housing 220 may face the second inner wall 220ISW2 of the housing 220, the third outer wall 220OSW3 of the housing 220 may face the third inner wall 220ISW3 of the housing 220, and the fourth outer wall 220OSW4 of the housing 220 may face the fourth inner wall 220ISW4 of the housing 220.

[0098] A second scrubbing step may be performed in the second scrubbing space 215a. The second scrubbing step can mean dissolving the first gas G1 in the gas mixture (Gm in Figure 1) injected into the absorption tower 210 into the second scrubbing solution.

[0099] In some embodiments, the second scrubbing solution may be supplied to the interior of the absorption tower 210 via the first showerhead 217a. The second scrubbing solution may be supplied to the second scrubbing space 215a via the first showerhead 217a.

[0100] The second scrubbing solution is supplied from the top to the bottom of the second scrubbing space 215a, and at least a portion of the first gas (G1 in Figure 1) can dissolve in the second scrubbing solution while the gas mixture (Gm in Figure 1) flows from the top to the bottom of the second scrubbing space 215a. In some embodiments, the second scrubbing solution may include water, however, the technical concept of the present invention is not limited thereto.

[0101] In some embodiments, the first showerhead 217a may be a spray nozzle. The first showerhead 217a can supply a second scrubbing solution with small particles to the second scrubbing space 215a. Therefore, the contact area between the second scrubbing solution and the gas mixture can be improved. This makes it possible to provide a semiconductor equipment scrubber 20 with improved scrubbing efficiency.

[0102] The first shower head 217a can be installed on top of the absorption tower 210. The first shower head 217a can be connected to piping (not shown) installed outside the absorption tower 210.

[0103] In some embodiments, the first showerhead 217a and the solution supply nozzle 227 may be connected to the scrubbing solution storage unit 270 via piping (not shown) that connects to the scrubbing solution storage unit 270. That is, the second scrubbing solution supplied to the second scrubbing space 215a via the first showerhead 217a may be a contaminated scrubbing solution stored in the scrubbing solution storage unit 270. Similarly, the first scrubbing solution supplied to the first scrubbing space 225 via the solution supply nozzle 227 may be a contaminated scrubbing solution stored in the scrubbing solution storage unit 270.

[0104] Thus, when using the semiconductor equipment scrubber 20 of the present invention, the scrubbing solution can be reused, thereby reducing the amount of water used in the scrubbing process.

[0105] In some embodiments, a gas inlet 25 may be installed on one side of the second scrubbing space 215a. The gas mixture (Gm in Figure 1) to be introduced into the absorption tower 210 can be introduced into the absorption tower 210 through the gas inlet 25. The gas inlet 25 may be connected to the first piping 11, and the other side of the first piping 11 is connected to the semiconductor chamber (10 in Figure 1), so the gas mixture (Gm in Figure 1) introduced into the gas inlet 25 may be supplied from the semiconductor chamber.

[0106] In some embodiments, specifically, a negative pressure can be provided to the first scrubbing space 225 via the gas outlet 26. That is, the pressure at the gas inlet 25 and the pressure at the gas outlet 26 may differ from each other. Therefore, the gas mixture Gm can flow from the gas inlet 25 towards the gas outlet 26. The difference between the pressure at the gas inlet 25 and the pressure at the gas outlet 26 can be used to perform the first and second scrubbing processes.

[0107] In some embodiments, the first scrubbing space 225 and the second scrubbing space 215a can be connected to each other at the bottom of the absorption tower 210. That is, the gas mixture introduced into the second scrubbing space 215a can flow from the top to the bottom of the second scrubbing space 215a and be introduced into the first scrubbing space 225 from the bottom of the absorption tower 210. In the first scrubbing space 225, the gas mixture (Gm in Figure 1) can rise in the second direction D2.

[0108] When using the semiconductor equipment scrubber 20 according to some embodiments, the contact area of ​​the gas in contact with the scrubbing solution can be improved. Specifically, the contact area can be improved by forming bubbles in the scrubbing solution.

[0109] For example, in Figure 5, the gas mixture (Gm in Figure 1) can pass through the first tray hole 230H and rise in the second direction D2 (see reference numeral 230u in the drawing).

[0110] After the gas mixture (Gm in Figure 1) passes through the first tray hole 230H, a bubble BBL may form on the upper surface of the first tray 230. The bubble BBL may form inside the first scrubbing solution SSL. At the point where the bubble BBL and the first scrubbing solution SSL come into contact, the first gas (G1 in Figure 1) may dissolve in the first scrubbing solution SSL.

[0111] Although not shown, the gas mixture (Gm in Figure 1) can pass through the first tray hole 230H, then through the second tray hole 240H, and rise in the second direction D2. After the gas mixture (Gm in Figure 1) passes through the second tray hole 240H, bubbles may form on the upper surface of the second tray 240. Similarly, after the gas mixture (Gm in Figure 1) passes through the second tray hole 240H, it can pass through the third tray hole 250H, and rise in the second direction D2. After the gas mixture (Gm in Figure 1) passes through the third tray hole 250H, bubbles may form on the upper surface of the third tray 250.

[0112] When bubble BBLs are formed in the scrubbing solution, the contact area between the gas and the scrubbing solution can be improved. Therefore, a semiconductor equipment scrubber 20 with improved scrubbing efficiency can be provided.

[0113] Below, with reference to Figures 6 to 11, a semiconductor mounting scrubber according to several other embodiments of the present invention will be described. For the sake of clarity, any content that overlaps with that described using Figures 1 to 5 will be briefly explained or omitted.

[0114] Figures 6 to 11 illustrate semiconductor mounting scrubbers according to some other embodiments of the present invention. For reference, Figures 6, 7, 10, and 11 may be cross-sectional views of semiconductor mounting scrubbers according to some other embodiments of the present invention, respectively, and Figures 8 and 9 may be plan views of semiconductor mounting scrubbers according to some other embodiments of the present invention, respectively.

[0115] First, referring to Figure 6, some embodiments of the semiconductor equipment scrubber 20 may further include a sub-solution supply nozzle 229.

[0116] The sub-solution supply nozzle 229 is located on top of the absorption tower 210, and more specifically, it may be located on top of the housing 220. The sub-solution supply nozzle 229 can supply the scrubbing solution to the upper surface of the third tray 250. The scrubbing solution may be water, but the technical concept of the present invention is not limited thereto.

[0117] The sub-solution supply nozzle 229 may be a spray nozzle. The sub-solution supply nozzle 229 can supply a scrubbing solution with small particles onto the upper surface of the third tray 250. Therefore, the contact area between the scrubbing solution and the gas mixture can be improved. This makes it possible to provide a semiconductor equipment scrubber 20 with improved scrubbing efficiency.

[0118] The sub-solution supply nozzle 229 can either continuously supply the scrubbing solution while the first scrubbing process is being carried out, or it can supply the scrubbing solution only for a portion of the time while the first scrubbing process is being carried out.

[0119] Referring to Figure 7, some embodiments of the semiconductor mounting scrubber 20 may further include a packing area 219.

[0120] The packing area 219 may be located within the second scrubbing space 215a. The packing area 219 may be interposed between the first shower head 217a and the scrubbing solution storage unit 270.

[0121] A pall ring member may be placed within the packing area 219. At least one pall ring member may be placed. The first gas can actively contact the pall ring member in the second scrubbing space 215a. The pall ring member can help the first gas G1 dissolve in the second scrubbing solution. This can improve the scrubbing efficiency of the semiconductor equipment scrubber 20.

[0122] Referring to Figure 8, some embodiments of the semiconductor mounting scrubber 20 may further include a third scrubbing space 215b and a first connecting space 215c.

[0123] The third scrubbing space 215b may be defined by the inner wall of the absorption tower 210 and the outer wall of the housing 220. For example, the third scrubbing space 215b may be defined by the second inner wall 210ISW2 of the absorption tower 210, the second outer wall 220OSW2 of the housing 220, and the fourth inner wall of the absorption tower 210.

[0124] The second inner wall 210ISW2 of the absorption tower 210 can face the second outer wall 220OSW2 of the housing 220. The second outer wall 220OSW2 of the housing 220 can face the second inner wall 220ISW2 of the housing 220.

[0125] A third scrubbing step can be performed in the third scrubbing space 215b. The third scrubbing step can mean dissolving the first gas G1 in the gas mixture (Gm in Figure 1) injected into the absorption tower 210 into the third scrubbing solution, which will be described later.

[0126] In some embodiments, the third scrubbing solution may be supplied to the interior of the absorption tower 210 via the second showerhead 217b. The third scrubbing solution may be supplied to the third scrubbing space 215b via the second showerhead 217b.

[0127] The third scrubbing solution is supplied from the top to the bottom of the third scrubbing space 215b, and at least a portion of the first gas (G1 in Figure 1) may dissolve in the third scrubbing solution while the gas mixture (Gm in Figure 1) flows from the top to the bottom of the third scrubbing space 215b. In some embodiments, the third scrubbing solution may include water, but the technical idea of ​​the present invention is not limited thereto.

[0128] The second showerhead 217b may be installed on top of the absorption tower 210. The second showerhead 217b may be connected to piping (not shown) installed outside the absorption tower 210.

[0129] In some embodiments, the second showerhead 217b may be a spray nozzle. The second showerhead 217b can supply a third scrubbing solution with smaller particles to the third scrubbing space 215b. This improves the contact area between the third scrubbing solution and the gas mixture. This makes it possible to provide a semiconductor equipment scrubber 20 with improved scrubbing efficiency.

[0130] The first connecting space 215c may be interposed between the third scrubbing space 215b and the second scrubbing space 215a.

[0131] The gas mixture (Gm in Figure 1) introduced into the absorption tower 210 via a gas inlet 25 located on one side of the second scrubbing space 215a can move to the third scrubbing space 215b via the first connecting space 215c.

[0132] In some embodiments, the first scrubbing space 225 and the third scrubbing space 215b can be connected to each other at the bottom of the absorption tower 210. That is, the gas mixture introduced into the third scrubbing space 215b can flow from the top to the bottom of the third scrubbing space 215b and be introduced into the first scrubbing space 225 from the bottom of the absorption tower 210. In the first scrubbing space 225, the gas mixture can rise in the second direction D2.

[0133] According to some embodiments, an additional third scrubbing step can be performed in the third scrubbing space 215b. Thus, a semiconductor equipment scrubber 20 with improved scrubbing efficiency can be provided.

[0134] Referring to Figure 9, some embodiments of the semiconductor mounting scrubber 20 may further include a third scrubbing space 215b, a first connecting space 215c, a fourth scrubbing space 215d, and a second connecting space 215e.

[0135] The third scrubbing space 215b and the first connecting space 215c are identical to the third scrubbing space 215b and the first connecting space 215c described in Figure 8, so a detailed explanation is omitted.

[0136] The fourth scrubbing space 215d may be defined by the inner wall of the absorption tower 210 and the outer wall of the housing 220. For example, the fourth scrubbing space 215d may be defined by the third inner wall 210ISW3 of the absorption tower 210, the third outer wall 220OSW3 of the housing 220, and the fourth inner wall of the absorption tower 210.

[0137] The fourth scrubbing space 215d may be positioned apart from the third scrubbing space 215b in the third direction D3. A housing 220 may be interposed between the fourth scrubbing space 215d and the third scrubbing space 215b. A first scrubbing space 225 may be interposed between the fourth scrubbing space 215d and the third scrubbing space 215b.

[0138] The third inner wall 210ISW3 of the absorption tower 210 can face the third outer wall 220OSW3 of the housing 220. The third outer wall 220OSW3 of the housing 220 can face the third inner wall 220ISW3 of the housing 220.

[0139] In the fourth scrubbing space 215d, the fourth scrubbing step may be performed. The fourth scrubbing step can mean the step of dissolving the first gas G1 in the gas mixture (Gm in Figure 1) injected into the absorption tower 210 into the fourth scrubbing solution, which will be described later.

[0140] In some embodiments, the fourth scrubbing solution may be supplied into the absorption tower 210 via the third showerhead 217d. The fourth scrubbing solution may be supplied to the fourth scrubbing space 215d via the third showerhead 217d. In some embodiments, the fourth scrubbing solution may include water, but the technical idea of ​​the present invention is not limited thereto.

[0141] The fourth scrubbing solution is supplied from the top to the bottom of the fourth scrubbing space 215d, and at least a portion of the first gas (G1 in Figure 1) may dissolve in the fourth scrubbing solution while the gas mixture (Gm in Figure 1) flows from the top to the bottom of the fourth scrubbing space 215d.

[0142] The third showerhead 217d may be installed on top of the absorption tower 210. The third showerhead 217d may be connected to piping (not shown) installed outside the absorption tower 210.

[0143] In some embodiments, the third showerhead 217d may be a spray nozzle. The third showerhead 217d can supply a fourth scrubbing solution with smaller particles to the fourth scrubbing space 215d. This improves the contact area between the fourth scrubbing solution and the gas mixture. This makes it possible to provide a semiconductor equipment scrubber 20 with improved scrubbing efficiency.

[0144] The second connecting space 215e may be interposed between the second scrubbing space 215b and the fourth scrubbing space 215d.

[0145] Therefore, the gas mixture (Gm in Figure 1) introduced into the absorption tower 210 via the gas inlet 25 located on one side of the second scrubbing space 215a can move to the fourth scrubbing space 215d via the second connecting space 215e.

[0146] In some embodiments, the first scrubbing space 225 and the fourth scrubbing space 215d can be connected to each other at the bottom of the absorption tower 210. That is, the gas mixture introduced into the fourth scrubbing space 215d can flow from the top to the bottom of the fourth scrubbing space 215d and be introduced into the first scrubbing space 225 from the bottom of the absorption tower 210. In the first scrubbing space 225, the gas mixture can rise in the second direction D2.

[0147] According to some embodiments, an additional fourth scrubbing step can be performed in the fourth scrubbing space 215d. Thus, a semiconductor equipment scrubber 20 with improved scrubbing efficiency can be provided.

[0148] Referring to Figure 10, a semiconductor loading scrubber 20 according to some embodiments may include two trays 230 and 240. That is, the semiconductor loading scrubber 20 may include a first tray 230 and a second tray 240.

[0149] The second tray 240 may be placed on the first tray 230. The second tray 240 may be placed on the top surface of the first tray 230. The first tray 230 may be placed on the bottom surface of the second tray 240. No other trays may be placed on the top surface of the second tray 240.

[0150] In some embodiments, the first scrubbing solution (SSL in Figure 5) may be supplied from the solution supply nozzle 227 and discharged onto the upper surface of the second tray 240. Specifically, the first scrubbing solution (SSL in Figure 5) may be discharged onto the upper surface of the second tray 240 in the area adjacent to the fourth inner wall 220ISW4 of the housing 220. The first scrubbing solution (SSL in Figure 5) may also be discharged onto the upper surface of the second tray 240 in the area furthest from the second tray wall 245.

[0151] The discharged first scrubbing solution (SSL in Figure 5) can flow from the top surface of the second tray 240 toward the second tray wall 245 while the first scrubbing process is being performed. The first scrubbing solution (SSL in Figure 5) can flow downwards beyond the second tray wall 245. At this time, the first scrubbing solution (SSL in Figure 5) does not flow downwards through the second tray holes 240H. The first scrubbing solution (SSL in Figure 5) that has flowed downwards beyond the second tray wall 245 can be discharged onto the top surface of the first tray 230.

[0152] Similarly, the first scrubbing solution (SSL in Figure 5) can flow from the top surface of the first tray 230 toward the first tray wall 235 while the first scrubbing process is being carried out. At this time, the first scrubbing solution (SSL in Figure 5) does not flow downward through the first tray holes 230H. The first scrubbing solution (SSL in Figure 5) can flow beyond the first tray wall 235 toward the bottom of the absorption tower 210.

[0153] The semiconductor scrubber 20 shown in Figure 10 includes only two trays 230 and 240. Therefore, the height of the semiconductor scrubber 20 in the second direction D2 can be reduced. In other words, when using the semiconductor scrubber 20 according to some embodiments of the present invention, space efficiency can be improved.

[0154] Referring to Figure 11, some embodiments of the semiconductor mounting scrubber 20 can include one tray 230. That is, the semiconductor mounting scrubber 20 can include a first tray 230.

[0155] In some embodiments, the first scrubbing solution (SSL in Figure 5) may be supplied from the solution supply nozzle 227 and discharged onto the upper surface of the first tray 230. Specifically, the first scrubbing solution (SSL in Figure 5) may be discharged onto the upper surface of the first tray 230 in the area adjacent to the first inner wall 220ISW1 of the housing 220. The first scrubbing solution (SSL in Figure 5) may also be discharged onto the upper surface of the first tray 230 in the area furthest from the first tray wall 235.

[0156] The first scrubbing solution (SSL in Figure 5) can flow from the top surface of the first tray 230 toward the first tray wall 235 while the first scrubbing process is being carried out. At this time, the first scrubbing solution (SSL in Figure 5) does not flow downward through the first tray holes 230H. The first scrubbing solution (SSL in Figure 5) can flow beyond the first tray wall 235 toward the bottom of the absorption tower 210.

[0157] The semiconductor scrubber 20 shown in Figure 11 includes only one tray 230. Therefore, the height of the semiconductor scrubber 20 in the second direction D2 can be reduced. In other words, when using the semiconductor scrubber 20 according to some other embodiments of the present invention, space efficiency can be further improved.

[0158] Although not shown in the figures, some embodiments of the semiconductor equipment scrubber 20 may not include the first showerhead 217a. That is, the second scrubbing process does not have to be performed in the second scrubbing space 215a. In this case, the gas mixture introduced into the absorption tower 210 may pass through the second scrubbing space 215a and be introduced into the first scrubbing space 225, where the first scrubbing process may be performed.

[0159] As another example, the semiconductor equipment scrubber 20 according to some embodiments may not include a second scrubbing space 215a. In this case, the gas inlet 25 may be located at the bottom of the absorption tower 210. In this case, the gas mixture (Gm in Figure 1) is supplied from the bottom of the absorption tower 210 and can rise in the second direction D2 toward the top of the absorption tower 210.

[0160] The following describes the operation methods of a semiconductor mounting scrubber according to several embodiments of the present invention, with reference to Figures 12 and 13. For reference, Figure 12 is an exemplary flowchart illustrating the operation methods of a semiconductor mounting scrubber according to several embodiments of the present invention.

[0161] Figures 12 and 13 illustrate the operation method of a semiconductor equipment scrubber according to several embodiments of the present invention.

[0162] First, referring to Figure 12, the operation method of a semiconductor equipment scrubber according to some embodiments of the present invention may include providing a gas mixture from a semiconductor chamber into the absorption tower (S100), passing the gas mixture through tray holes to form bubbles in the scrubbing solution (S200), dissolving a first gas at the contact surface between the bubbles and the scrubbing solution (S300), and discharging the gas mixture from which the first gas has been removed to the outside of the absorption tower (S400). The concentration of harmful substances contained in the gas discharged to the outside of the absorption tower can be very low.

[0163] Specifically, referring to Figures 1 and 13, a gas mixture Gm can be supplied from the semiconductor chamber 10 to the semiconductor equipment scrubber 20. The gas mixture Gm can then be introduced into the absorption tower 210 through the first piping 11 and the gas inlet 25 (see reference numeral 310 in the drawings).

[0164] The gas mixture Gm can be introduced into the upper part of the second scrubbing space 215a. The gas mixture Gm can then move to the lower part of the second scrubbing space 215a (see reference numeral 310 in the drawing).

[0165] In some embodiments, a second scrubbing process may be performed in a second scrubbing space 215a.

[0166] Specifically, a second scrubbing solution may be supplied via a first showerhead 217a (see reference numeral 410 in the drawings). The second scrubbing solution may be water, but the technical concept of the present invention is not limited thereto.

[0167] The first showerhead 217a may be a spray nozzle and can supply a second scrubbing solution with small particles. As the gas mixture Gm moves to the bottom of the second scrubbing space 215a, the first gas G1 in the gas mixture Gm may dissolve in the second scrubbing solution. The second scrubbing step may be a step in which the first gas G1 dissolves in the second scrubbing solution.

[0168] A gas mixture Gm can be supplied to a first scrubbing space 225 (see reference numeral 310 in the drawing). A first scrubbing step can be carried out in the first scrubbing space 225. The first scrubbing step may be a step in which a first gas G1 in the gas mixture Gm dissolves in a first scrubbing solution.

[0169] While the first scrubbing process is being performed, the solution supply nozzle 227 can supply the first scrubbing solution to the upper surface of the third tray 250 (see reference numeral 420 in the drawing). The first scrubbing solution initially supplied can flow downward through the third tray hole 250H, the second tray hole 240H, and the first tray hole 230H. That is, in the initial state, the first scrubbing solution can flow downward through the tray holes 250H, 240H, and 230H.

[0170] While the first scrubbing process is being carried out, the gas mixture Gm can rise in the second direction D2. The gas mixture Gm can rise in the second direction D2 by passing through the first tray hole 230H.

[0171] Specifically, referring to Figure 5, the gas mixture Gm can pass through the first tray hole 230H. A bubble BBL may form in the first scrubbing solution SSL. At the contact surface where the bubble BBL and the first scrubbing solution SSL come into contact, the first gas G1 may dissolve in the first scrubbing solution SSL.

[0172] During the first scrubbing process, the first scrubbing solution does not flow down through tray holes 250H, 240H, and 230H. This may be due to the pressure of the gas mixture Gm rising through tray holes 250H, 240H, and 230H.

[0173] During the first scrubbing process, the first scrubbing solution can flow from the top surface of the third tray 250 toward the third tray wall 255, and beyond the third tray wall 255 toward the top surface of the second tray 240 (see reference numeral 430 in the drawing). The first scrubbing solution can also flow from the top surface of the second tray 240 toward the second tray wall 245, and beyond the second tray wall 245 toward the top surface of the first tray 230 (see reference numeral 440 in the drawing). The first scrubbing solution can also flow from the top surface of the first tray 230 toward the first tray wall 235, and beyond the first tray wall 235 toward the bottom of the absorption tower 210 (see reference numeral 450 in the drawing).

[0174] While the first scrubbing solution flows in the aforementioned direction, the gas mixture Gm can rise in the second direction D2 through the tray holes 250H, 240H, and 230H. As the gas mixture Gm passes through the tray holes 250H, 240H, and 230H, bubbles may form within the first scrubbing solution.

[0175] Specifically, the gas mixture Gm can pass through the first tray hole 230H (see reference numeral 320 in the drawing). Then, the gas mixture Gm can pass through the second tray hole 240H (see reference numeral 330 in the drawing). Then, the gas mixture Gm can pass through the third tray hole 250H (see reference numeral 340 in the drawing).

[0176] As the gas mixture Gm passes through tray holes 250H, 240H, and 230H, the first gas G1 can dissolve in the first scrubbing solution.

[0177] Next, the gas mixture Gm from which the first gas G1 has been removed can pass through the demister 260 and be discharged to the outside of the absorption tower 210 (see reference numeral 350 in the drawing). The gas mixture Gm discharged through the gas outlet 26 contains almost no trace of the first gas G1. The gas discharged through the gas outlet 26 may be the second gas G2.

[0178] Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the embodiments described above and can be manufactured in a variety of different forms. A person with ordinary skill in the art to which the present invention belongs will understand that the invention can be implemented in other specific forms without changing the technical idea or essential features of the present invention. Therefore, the embodiments described above should be understood to be illustrative in all respects and not limiting.

Claims

1. A semiconductor equipment scrubber for scrubbing a gas mixture supplied from a semiconductor chamber where a semiconductor process is carried out, The aforementioned semiconductor equipment scrubber is An absorption tower for separating the gas mixture into a first gas and a second gas, Within the absorption tower, there is a housing that defines a first scrubbing space in which the first scrubbing process is carried out, A first tray is connected to the first inner wall of the housing and extends in a first direction intersecting the first inner wall, The first tray has a first tray hole through which the gas mixture passes, which penetrates the first tray in a second direction intersecting the first direction. The upper surface of the first tray includes a solution supply nozzle for providing the first scrubbing solution for performing the first scrubbing step, The gas mixture passes through the first tray hole and rises in the second direction, in a scrubber for semiconductor equipment.

2. The first scrubbing step involves the gas mixture passing through the first tray holes and rising in the second direction to generate bubbles, The semiconductor equipment scrubber according to claim 1, further comprising the fact that at least a portion of the first gas dissolves in the first scrubbing solution at a surface in contact with the surface of the bubble and the first scrubbing solution.

3. A first pipe, one end of which is connected to the semiconductor chamber and the other end of which is connected to the absorption tower, A gas inlet connected to the first piping, through which the gas mixture is introduced into the interior of the absorption tower, A gas outlet connected to the absorption tower, through which the gas mixture is discharged to the outside of the absorption tower, A second scrubbing space is defined by the first inner wall of the absorption tower and the first outer wall of the housing facing the first inner wall of the absorption tower, The system further includes a first shower head installed above the second scrubbing space and supplying the second scrubbing solution to the second scrubbing space, The semiconductor mounting scrubber according to claim 1, wherein one side of the second scrubbing space is connected to the gas inlet, and the other side of the second scrubbing space is connected to the first scrubbing space.

4. The gas outlet is connected to the first scrubbing space, The semiconductor equipment scrubber according to claim 3, which provides negative pressure to the first scrubbing space via the gas outlet.

5. The first scrubbing space and the second scrubbing space are connected to each other at the lower part of the absorption tower. The second scrubbing process is performed in the second scrubbing space. The semiconductor equipment scrubber according to claim 3, wherein the second scrubbing step includes the gas mixture being introduced into the gas inlet and flowing in the second direction in the second scrubbing space, while at least a portion of the first gas is dissolved by the second scrubbing solution.

6. A third scrubbing space is defined by the second inner wall of the absorption tower intersecting the first inner wall of the absorption tower, and the second outer wall of the housing facing the second inner wall of the absorption tower, The semiconductor equipment scrubber according to claim 3, further comprising a second shower head installed above the third scrubbing space for supplying a third scrubbing solution to the third scrubbing space.

7. A fourth scrubbing space is defined by the third inner wall of the absorption tower and the third outer wall of the housing facing the third inner wall of the absorption tower, The system further includes a third shower head installed above the fourth scrubbing space and supplying the fourth scrubbing solution to the fourth scrubbing space, The semiconductor equipment scrubber according to claim 6, wherein the first inner wall of the absorption tower connects the second inner wall and the third inner wall of the absorption tower to each other.

8. A second tray is connected to the second inner wall of the housing, extends in the first direction intersecting the second inner wall of the housing, and is separated from the first tray in the second direction. The second tray further includes a second tray hole that penetrates the second tray in the second direction and through which the gas mixture passes, The second inner wall of the housing faces the first inner wall of the housing, The scrubber for semiconductor equipment according to claim 1, wherein the gas mixture rises through the second tray hole.

9. The first tray further includes a first tray wall connected to one end of the first tray and projecting in the second direction from the upper and lower surfaces of the first tray, respectively. The first tray wall includes a portion that protrudes from the upper surface of the first tray. The semiconductor equipment scrubber according to claim 1, wherein the first scrubbing solution flows from the upper surface of the first tray to the protruding portion and flows beyond the protruding portion toward the lower part of the absorption tower.

10. At least a portion of the first gas is dissolved in the first scrubbing solution. The semiconductor equipment scrubber according to claim 1, wherein the first gas includes a hydrophilic gas.

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