Remote plasma electron-induced mask repair

Abstract

The present invention relates to an apparatus for processing an object (O), comprising an activator (A) for activating a precursor gas (P) to generate a component (C) from the precursor gas, a guide (G) for locally supplying the component onto the object, and a beam unit (BU) for supplying a particle beam (B) onto the object. Further embodiments relate to a similar method and a computer program.

Description

Technical Field

[0001] This patent application claims the priority of U.S. Patent Application No. 63 / 462,283, titled "REMOTE-PLASMA ELECTRON-INDUCED MASK REPAIR," filed with the United States Patent and Trademark Office on April 27, 2023. U.S. Patent Application No. 63 / 462,283 is hereby incorporated by reference in its entirety into this patent application.

[0002] The present invention relates to the processing of objects. Specifically, the present invention relates to the processing of objects using a particle beam and a component generated from a precursor gas. In this regard, the present invention includes an apparatus, a method, and a computer program corresponding thereto.

Background Art

[0003] In the field of semiconductor technology, various methods and devices for processing objects are known. For example, processing may involve removing the material of an object in a defined manner.

[0004] The removal of material can be carried out by exposing the object to a chemical substance (e.g., a precursor gas) and further exposing the object to particles (e.g., electrons, photons, ions, or a combination thereof). In such an example, the particles can be combined with the chemical substance to induce a reaction such that the material of the object is removed. Such particle-induced chemical reactions can strongly depend on the properties of the chemical substance (e.g., the precursor gas) used. Therefore, from a technical perspective, it may be desirable to use a specific chemical substance (e.g., a specific precursor gas) to ensure a controlled removal of the material.

[0005] However, a specific chemical substance that may be advantageous for a particular particle-induced reaction may not necessarily have optimal properties with respect to technical boundary conditions (e.g., regarding the industrial utilization and / or control of the particle-induced reaction).

[0006] Therefore, the currently known techniques for processing materials are not necessarily optimal. Thus, it is necessary to find ways to improve material processing. [Overview of the Initiative]

[0007] The embodiments described herein address the above-mentioned needs at least in part.

[0008] A first aspect relates to an apparatus for processing an object. The apparatus may include an activator for activating a precursor gas to generate components from the precursor gas, and a guide for locally supplying the components onto the object. The apparatus may further include a beam unit for supplying a particle beam onto the object.

[0009] For example, an activator can be configured to activate a precursor gas by chemical and / or physical activation. This may include, for example, inducing chemical and / or physical reactions in the precursor gas. This can be achieved by applying energy to the precursor gas with the activator. Components generated from the precursor gas may include the products of the induced chemical and / or physical reactions of the precursor gas. For example, the precursor gas can be considered a raw material (e.g., reactants), and the components are substances that can be generated from the raw material (i.e., the precursor gas) by the activator in the apparatus.

[0010] For example, a precursor gas may initially be in a first (chemical and / or physical) state. In the first state, the precursor gas may contain one or more chemical elements from the periodic table. One or more chemical elements can act as building blocks from which components are generated. For example, in the first state, one or more chemical elements may be arranged in the form of atoms, molecules, ions and / or any other type of chemical bond. At least a portion of the precursor gas can be converted to a second (chemical and / or physical) state by activating the precursor gas, for example by supplying it with energy. In the second state, one or more chemical elements may be arranged in a different manner (at least partially) compared to the first state. Different arrangements of chemical elements may include components generated from the precursor gas.

[0011] As an example of the generated components, in the first state, the precursor gas may not contain atoms and / or molecules with unpaired electrons. In the second state, atoms and / or molecules with unpaired electrons may be present. In such an example, atoms and / or molecules with unpaired electrons (e.g., (free) radicals) can be considered as generated components. It should be noted that the concentration of atoms and / or molecules with unpaired electrons may differ in the second state compared to the first state. For example, the concentration of atoms and / or molecules with unpaired electrons may be higher in the second state compared to the first state. Therefore, activation can also be used, for example, to generate more of the components that were already present in the first state.

[0012] To give further examples of generated components, the electronic state and / or electron configuration of atoms, molecules, ions, and / or any other type of compound may differ in the second state compared to the first state. For example, one or more electrons may be removed (or added) from atoms, molecules, ions, and / or any other type of compound that were present in the first state.

[0013] Further examples of generated components include atoms, molecules, ions, and / or any other types of compounds that were not present in the first state but may be present in the second state. In such an example, new atoms, new molecules, new ions, and / or new types of compounds can be considered generated components. It should be noted that the concentrations of atoms, molecules, ions, and / or any other types of compounds may differ in the second state compared to the first state. For example, the concentrations of atoms, molecules, ions, and / or any other types of compounds may be higher (or lower) in the second state compared to the first state. Therefore, activation (as described herein) can also be used to generate more (or less) of components that were already present in the first state. For example, O3 molecules can be generated as a component at least partially from O2 molecules contained in the precursor gas.

[0014] It should be noted that one or more atoms, molecules, and / or any other types of chemical bonds that were present in the first state may be absent (or present to a lesser extent) in the second state due to the generation of components.

[0015] Therefore, the apparatus may, in particular, enable the generation of a component from a precursor gas via an activator, in which case the component was (substantially) absent in the precursor gas itself. For example, the generated component may not be present at all in the precursor gas, or it may be present only at a relatively low (e.g., non-significant) concentration such that no (significant) reaction with the object occurs. Thus, according to the present invention, the component does not need to be stored in the apparatus and can be generated in situ within the apparatus.

[0016] For example, an activator can therefore enable the generation of components that may be advantageous for processing materials but may not have desirable storage properties (e.g., components that may not be easily stored in a stable, safe, and / or reliable manner). Because of the activator, it may suffice to store a precursor gas (or the gases that make up the precursor gas) that may have more favorable storage properties.

[0017] For example, some chemicals (which may be advantageous for particle-induced reactions) may not necessarily possess stable and / or desirable storage properties. In such cases, reliable storage of the chemical may not be guaranteed, or may require advanced storage techniques, complex safety measures, and / or considerable maintenance efforts. Typically, a major drawback of storing unstable chemicals cannot be overcome in industrial environments. Therefore, known methods may be limited to using stable chemicals for particle-induced reactions. This limitation can be overcome, at least in part, by the embodiments described herein.

[0018] For example, precursor gases with advantageous storage properties may include precursor gases that are chemically stable over long periods (e.g., several months or several years). Precursor gases with advantageous storage properties may also include precursor gases with relatively high vapor pressures.

[0019] In this regard, the apparatus may, for example, enable the generation of chemically unstable components over long periods of time (e.g., components that are unstable for at least one hour, one day, one month, or one year).

[0020] In another embodiment, the apparatus can enable the generation of a component from a precursor gas, the component having a vapor pressure lower than that of the precursor gas.

[0021] In another embodiment, precursor gases having undesirable storage properties may include precursor gases that may contain explosive properties. For example, certain gases may explode under the influence of shock, friction, and / or vibration. According to the present invention, the apparatus can be made to generate components from a precursor gas, which may contain the aforementioned undesirable explosive properties, but the stored precursor gas itself will not (substantially) contain such explosive properties.

[0022] In general, the apparatus can enable the storage of a stable precursor gas from which highly reactive and / or unstable components can be generated, which can be advantageous for processing materials.

[0023] Furthermore, the device can enable the localized delivery of components onto an object via the device's guides.

[0024] For example, the guide may include conduits so that components can move (at least partially) from the activator through the conduits. In one embodiment, the activator may be configured to eject components so that the components are transported to an inlet opening in the guide. The guide may further include an outlet opening from which components can be discharged so that the components can be locally supplied onto an object.

[0025] For example, highly reactive chemicals (which may be advantageous for processing an object) may not be easily controllable. Therefore, known techniques may rely on simply supplying the chemical globally over the entire object (e.g., by simply filling the entire chamber containing the object with the chemical) to minimize process control. However, process control in such examples may be limited to the global control of the chemical. This can limit the possible control over the processing of the object (e.g., due to the chemical affecting the entire object and / or the entire chamber containing the object) and / or may require further maintenance efforts.

[0026] However, the device according to the invention need not necessarily be configured to supply the generated component in a global manner over the entire object. On the contrary, by using the guide, the component can be locally emitted onto a part of the object. Thus, a local part of the substance can contain a higher concentration of the component than another local part of the object. For example, locally supplying the component onto the object can create a concentration gradient of the component across the entire object or (at least) across a part of the object. The concentration gradient can include a concentration gradient that cannot be created when the component is globally supplied across the entire object (for example, when exposing the entire surface of the object to the component).

[0027] Thus, since a particular part of the object can be exposed to a component having a higher concentration than other parts in a defined manner, the device can allow for a higher degree of freedom in processing the object.

[0028] It should be noted that the device can further include a beam unit for supplying a particle beam onto an object. The particle beam can include charged particles and / or uncharged particles, and massive particles and / or massless particles. For example, the particle beam can include an electron beam, an ion beam, a photon beam, and / or a combination thereof. For example, the beam unit can supply at least one electron beam that can be incident on a substance. It is also conceivable that the beam unit can supply an electron beam and at least one type of ion beam. In another embodiment, the beam unit can supply at least two types of ion beams (in this case, an electron beam does not necessarily have to be supplied onto the object). In one embodiment, the beam unit can be configured to locally supply a particle beam onto an object. For example, the beam unit can include a beam focusing element for focusing the particle beam onto the object. However, the particle beam can be locally supplied onto the object without (necessarily) focusing the particle beam. The beam unit can also include a beam deflection element for deflecting and / or supplying the particle beam to a desired position on the object. The beam unit can be configured to supply the particle beam into a portion of the object that is exposed to the component.

[0029] For example, the device can thus enable the induction of a particle-induced reaction between a component and the material of the object by locally supplying the component onto the object (e.g., within the same part of the object, such as within the reaction region of the object) and also supplying particles onto the object. The particle-induced reaction can, for example, induce the removal of the material of the object (however, other types of reactions using the device are also conceivable).

[0030] In this regard, the guide and the activator can enable a more effective particle-induced reaction with the material of the object compared to known techniques that rely on globally supplying a chemical substance across the entire object.

[0031] In other words, to ensure an effective particle-induced reaction, a sufficient concentration (or pressure) of the component must be present in the reaction region of the particle-induced reaction. The present invention makes it easy to generate a high concentration of the component in the reaction region by locally supplying the component onto the object (by using a guide). That is, since the entire surface of the object does not need to be exposed to the component, the method of the present invention only requires that a relatively small total amount of the component reach a sufficient concentration in the reaction region.

[0032] In contrast, known methods sometimes rely on filling the entire object with a chemical substance to ensure a high concentration of the chemical substance in every part of the object (for example, to ensure a high global pressure of the chemical substance). However, this may require a relatively large amount of chemical substance compared to the concept of the present invention, and it also exposes and acts on the entire object with the chemical substance (which may not necessarily be desirable for the processing of the object).

[0033] As a result, the apparatus according to the present invention can easily generate high local concentrations of components in the reaction region, and can also be used even if the components themselves are highly reactive components that may be unstable during storage.

[0034] In other words, this function is made possible by a guide and an activator. It should be emphasized that the guide can enable the provision of the high concentration required for particle-induced reactions. The activator can enable the supply of highly reactive components for the reaction (based on easily storable precursor gases). Therefore, the combination of these two structures can enable a device that can be used, for example, to achieve more effective particle-induced reactions with the materials of an object.

[0035] The apparatus may include object holders for holding objects. Objects may include objects from the semiconductor industry. The apparatus may include one or more object holders for securely holding objects. For example, an object holder may include a holder for objects for lithography. Objects for lithography may include masks used for a specific type of lithography (e.g., UV lithography, DUV lithography, EUV lithography, high NA-EUV lithography, nanoimprint lithography, or any other type of lithography). Masks may include, for example, binary masks or phase-shift masks for a specific type of lithography. Objects for lithography may also include mask blanks, which may contain mask substrates (as known in the semiconductor industry). For example, an object holder may include a mask chuck.

[0036] Objects in the semiconductor industry may also include semiconductor-based wafers. For example, a wafer may contain a semiconductor (e.g., silicon, gallium arsenide, silicon carbide, gallium nitride, etc.). In one embodiment, the wafer may be processed (and therefore may also contain structural features or functional chips). In this regard, the wafer may also contain one or more metals that can be part of the structural features. For example, an object holder may include a wafer chuck.

[0037] Objects in the semiconductor industry may also include microchips. Microchips can be, for example, in an unpackaged stage. Apparatus can be used to process specific components of a microchip (for example, specific electrical components of a microchip). For example, object holders may include chucks for microchips and / or object holders used in scanning electron microscopy.

[0038] It should be noted that the object can include any type of object in which a particle-induced reaction may occur.

[0039] The device will be described in more detail below.

[0040] In one embodiment, the guide can be configured to supply a component onto a partial region of an object such that substantially only a partial region is exposed to the component. Thus, the guide can be configured not only to create a concentration gradient of the component throughout the object, but also to prevent certain parts of the object from being exposed to the component. In one embodiment, the parts not exposed to the component (e.g., parts outside the partial region) can be considered non-reactive parts of the object. It should be noted that small amounts of the component may still be present in such non-reactive parts. However, the concentration of the component in the non-reactive parts may be insufficient for particle-induced reactions by a particle beam. For example, if a particle beam is supplied into a non-reactive part, no particle-induced reaction will occur. In contrast, if a particle beam is supplied into a partial region, the particle beam will trigger particle-induced reactions with the material of the object. Therefore, the partial region can be considered a working area of ​​the object.

[0041] By adapting the guide configuration (as described herein) and / or the flow rate of components within the guide, it is possible to adjust the dimensions of a sub-region.

[0042] In one embodiment, the subregion may include a subregion having a maximum diameter of 10 mm. In another embodiment, the subregion may include a subregion having a maximum diameter of 5 mm. In yet another embodiment, the subregion may include a subregion having a maximum diameter of 3 mm. In yet another embodiment, the subregion may include a subregion having a maximum diameter of 1 mm.

[0043] In one embodiment, the subregion may include a (substantially) circular or elliptical shape, and the diameter of the subregion may be a diameter defined accordingly by the circular or elliptical shape. In one embodiment, the subregion may include a (substantially) rectangular or square shape, and the diameter of the subregion may be a diameter defined accordingly by the rectangular or square shape.

[0044] In one embodiment, a sub-region can be adapted based on the area of ​​the object. For example, a sub-region may include up to 1% of the object's area. In other embodiments, a sub-region may include up to 2%, 10%, 20%, 30%, 40%, 50%, or 60% of the object's area.

[0045] In one embodiment, the apparatus may have a first chamber containing a holder for an object, with a guide extending into at least a portion of the first chamber. For example, the guide may extend into the first chamber such that when the object is placed on the holder, the exit opening of the guide is positioned above the object. The holder may include a chuck (e.g., an electrostatic chuck or any other type of chuck). The holder may further include a positioning platform for positioning the object at a desired position within the first chamber.

[0046] In one embodiment, the guide may be positionable within a first chamber. For example, the guide may be positioned via a suitable guide moving unit. The guide moving unit can be configured to move the guide such that when an object is placed on the holder, the exit opening of the guide is above a desired position on the object.

[0047] Therefore, the portion of the area exposed to the components can be set by the device through the movement of the object and / or the movement of the guide itself.

[0048] In one embodiment, at the processing location of the object, the guide opening for releasing the component onto the object can be positioned at a distance of up to 10 cm, up to 1 cm, up to 100 μm, or up to 10 μm from the object. The opening for releasing the component onto the object may also be referred to herein as the guide exit opening. According to the present invention, the guide exit opening can be brought close to the object. This ensures that a localized high concentration of the component necessary for the particle-induced reaction (e.g., a high localized pressure of the component) is generated.

[0049] The processing location of an object can include the position of the holder on which the object is placed, and a particle-induced reaction can occur at the processing location. Therefore, in order to effectively process the material of the object, a particle beam and components can be locally supplied onto the object at the processing location.

[0050] In one embodiment, the distance between the exit opening of the guide and the object can be adjusted by the device by moving the holder and / or the guide.

[0051] In one embodiment, the inner wall of the guide may include a coating that is substantially resistant to the components. As described herein, the components may include chemically highly reactive components. Therefore, if technical precautions are not taken, the components may induce significant wear, corrosion, and / or ablation within the guide. Accordingly, the coating of the inner wall of the guide may be tailored to one or more highly reactive components that may be generated from the precursor gas in order to minimize or eliminate the reaction of the components with the inner wall of the guide. Thus, the coating can minimize maintenance efforts (e.g., cleaning of the guide) and / or replacement of the guide resulting from the aforementioned actions, while nevertheless ensuring that the highly reactive components are locally and reliably supplied onto the object to enable effective particle-induced reactions. Accordingly, each coating can enable more reliable operation of the device in an industrial environment.

[0052] In one embodiment, the coating may include at least one material or a combination thereof from among Teflon, steel, plastic, and dielectric. The steel of the coating may include, for example, stainless steel and / or corrosion-resistant steel. The plastic of the coating may include, for example, FKM (fluorocarbon-based fluoroelastomer material group), PTFE (polytetrafluoroethylene), and PFA (perfluoroalkoxyalkane).

[0053] In one embodiment, the coating may be configured such that the components cannot be deactivated and / or neutralized by the coating (and / or include one or more materials). For example, the coating may be configured such that the components cannot be deactivated and / or neutralized when they come into contact with the coating.

[0054] In one embodiment, different sections of the guide may contain different coating materials. For example, a first section of the guide may contain a first coating material, and a second section of the guide may contain a second coating material different from the first coating material.

[0055] In one embodiment, the guide may include different sections, each section may have a different guide diameter (e.g., inner or outer diameter of the conduit). For example, the guide may include a first section having a first diameter (e.g., first inner or outer diameter of the conduit) and a second section having a second diameter (e.g., second inner or outer diameter of the conduit), the second diameter of which may be different from the first diameter.

[0056] For example, the guide diameter of the guide can be in the range of 0.5 mm to 30 cm. For example, one or more sections of the guide may have guide diameters in the millimeter range (e.g., guide diameters of 0.5 mm to 10 mm). For example, one or more sections of the guide may have guide diameters in the centimeter range (e.g., guide diameters of 1 cm to 30 cm).

[0057] In one embodiment, the guide may include guide diameters of at least 0.5 mm, at least 5 mm, at least 1 cm, at least 5 cm, at least 10 cm, at least 15 cm, at least 20 cm and / or at least 25 cm.

[0058] In one embodiment, the guide may include guide diameters of up to 30 cm, up to 25 cm, up to 20 cm, up to 15 cm, up to 10 cm, up to 5 cm, up to 1 cm, up to 5 mm, or up to 0.6 mm.

[0059] In one embodiment, the guide may be up to 10 cm in length. In another embodiment, the guide may be up to 50 cm, up to 1 m, up to 2 m, up to 3 m, up to 4 m, or up to 5 m in length.

[0060] In one embodiment, the guide may include a wall thickness of 0.1 mm to 30 cm (including coatings).

[0061] In one embodiment, the guide may include different sections, and these sections may have different wall thicknesses. For example, a first section of the guide may include a first wall thickness, and a second section of the guide may include a second wall thickness different from the first wall thickness.

[0062] In one embodiment, the activator can be separated from the object so that the object is not subjected to the activation reaction of the precursor gas. For example, the activator can be positioned away from the object (or object holder) so that the chemical and / or physical reactions of the precursor gas caused by the activator cannot affect the object itself. For example, the activator can be positioned at a distance from the object so that the entire activated precursor gas cannot interact with the object. According to the present invention, on the contrary, a set of one or more components present in the activated precursor gas can be extracted from the precursor gas into a guide so that only a set of one or more components comes into (local) contact with the object.

[0063] It should be noted that exposing an entire object to a reaction that generates components from a precursor gas may be undesirable. For example, an activated precursor gas may contain other components that are not favorable for particle-induced reactions. Also, global exposure of an object to the activation of a precursor gas (for example, this may cause uncontrollable scattering of the particle beam, preventing the particle beam from inducing local reactions) may even make (local) particle-induced reactions impossible.

[0064] In one embodiment, the apparatus may have a second chamber containing an activator, and the second chamber and the first chamber are at least partially coupled via a guide so that components can be transferred from the second chamber to the first chamber. In this embodiment, the apparatus may therefore include at least two chambers, namely a first chamber containing a holder for an object (and thus, for example, an object) and a second chamber containing an activator. Thus, the activation of the precursor gas can be carried out in a chamber different from the chamber in which the actual processing of the object by the generated components takes place. Thus, the second chamber can function as an activation chamber for the chemical and / or physical activation of the precursor gas. The object itself, which may be present in the first chamber, will not be affected by the chemical and / or physical reactions that occur for the activation of the precursor gas in this embodiment. The guide can function as a spatially separated coupling element between the first and second chambers that guides the components generated in the second chamber to the object present in the first chamber.

[0065] In one embodiment, the activator may include a plasma unit for forming a plasma to activate a precursor gas. For example, the plasma unit may be configured to form a plasma of the precursor gas. In one embodiment, the plasma unit may be configured to receive the precursor gas and ignite the plasma of the precursor gas. The plasma of the precursor gas may correspond to the activated precursor gas (as described herein). It should be noted that the plasma of the precursor gas may correspond to a second chemical state of the precursor gas (specifically, as described herein). The chemical elements of the precursor gas do not change when the precursor gas is converted into a plasma. However, various highly reactive components or new compounds that were not present in the (original, unactivated) precursor gas itself may be present in the plasma of the precursor gas.

[0066] A plasma unit may include any plasma-forming unit capable of exciting a precursor gas (for example, by energy excitation) to generate a plasma of the precursor gas. For example, a plasma unit may include one or more electrodes for applying an electric field extending into the precursor gas to form a plasma of the precursor gas (as known in the art).

[0067] It should be noted that the plasma unit can be configured to receive a precursor gas which may contain atoms and / or molecules favorable for igniting the plasma. For example, the precursor gas may (in particular) contain argon, in which case the plasma unit can be configured to excite argon atoms to generate the plasma of the precursor gas.

[0068] In one embodiment, the components may include plasma components. For example, components generated from a precursor gas may include plasma radicals, atoms, and / or molecules.

[0069] In one embodiment, the activator may include a radiation unit for irradiating the precursor gas with electromagnetic radiation to ionize the precursor gas in order to activate the precursor gas. It should be noted that the radiation unit can be configured to ionize one or more atoms or molecules of the precursor gas. In this embodiment, the plasma of the precursor gas does not necessarily have to be formed by the radiation unit. The radiation unit may include, for example, an ultraviolet radiator, in which case the electromagnetic radiation may include ultraviolet radiation emitted from the ultraviolet radiator. The radiation unit may also include, for example, a microwave radiator, in which case the electromagnetic radiation may include microwave radiation emitted from the microwave radiator. It should be noted that the radiation unit may include any type of radiator that emits electromagnetic radiation capable of ionizing one or more atoms or molecules of the precursor gas.

[0070] In one embodiment, the components may include components of the ionization precursor gas. For example, components generated from the precursor gas may include radicals, atoms, and / or molecules of the ionization precursor gas.

[0071] In one embodiment, the components may include radicals and / or compounds that are substantially absent in the precursor gas. For example, the activator (e.g., by a plasma unit and / or radiation unit) can generate atoms, ions, and / or molecules that were not present in the precursor gas.

[0072] In one embodiment, the apparatus may include a filter for filtering out specific components from among several components generated from a precursor gas, so that the specific components are supplied locally onto an object.

[0073] In one embodiment, the net charge of the component may be substantially neutral (or substantially zero).

[0074] In one embodiment, the net charge of the components may be substantially positive or negative.

[0075] In this regard, the filter may be configured to filter out specific components based on their net charge.

[0076] In one embodiment, the filter may include an ion filter and / or a neutralizing plate. The ion filter may include any type of ion filter that can allow only one or more specifically charged components to be extracted at the filter output. The apparatus may be configured to couple the filter output and / or the neutralizing plate output as guides so that the filtered components are supplied locally onto an object.

[0077] For example, an ion filter may include a field unit for generating an electric and / or magnetic field. The field unit can be positioned within the apparatus so that components of the activated precursor gas can be subjected to the electric and / or magnetic field. Depending on the adjustment of the electric and / or magnetic field, only one or more specifically charged components can be guided to the filter output of the field unit. For example, the field unit can be configured to deflect components with a non-zero net charge from the filter output, in which case components with a neutral net charge can move to the filter output unaffected by the electric and / or magnetic field of the field unit. However, the field unit can also be configured so that charged components can be extracted at the filter output (and thus locally supplied onto an object).

[0078] Ion filters may also include filters that can absorb certain types of charged components so that unabsorbed components may be present at the filter output.

[0079] For example, a neutralizing plate may include a conductive plate that can be electrically grounded (e.g., set to a potential of zero volts). Thus, the neutralizing plate may allow only neutral components to diffuse through it. Components with a net charge other than zero may be absorbed by the neutralizing plate and therefore filtered out. Thus, the neutralizing plate can also be considered and / or function as an ion filter.

[0080] In one embodiment, the apparatus can be configured to set the guide to a predetermined potential in order to filter out specific components. In this embodiment, the guide itself can function as an ion filter (similar to those described with respect to the neutralization plate). For example, the guide can be electrically grounded (e.g., the predetermined potential is set to zero volts). In such an embodiment, only electrically neutral components can be guided through the guide unaffected. However, components with positive or negative charges can be guided toward the guide due to their potential and therefore absorbed by the guide.

[0081] In a preferred embodiment, the apparatus can be configured such that only electrically neutral components can be guided onto the object. In such an embodiment, the filter mechanisms or combinations thereof described herein can therefore be configured to filter out charged components.

[0082] In one embodiment, the activator can be configured to guide the ejection of a beam-like component. For example, the activator may include openings and / or nozzles so that components of the activated precursor gas can be ejected from the activator through the openings and / or nozzles. The openings may be in the form of simple openings within the activator. The diameter of the openings may be adjustable (for example, to adjust the flow rate of the ejected component). It should be noted that the nozzles may also be adjustable (for example, to adjust the flow rate and / or velocity of the ejected component). The activator may also include an ejection unit, in which case the ejection unit may include an ejection system that includes one or more openings and / or nozzles.

[0083] As described herein, the apparatus may include a second chamber containing an activator. The second chamber may include, for example, a vacuum chamber. In such embodiments, the activator may be configured to eject a beam-like component into a portion of the second chamber so that the beam particles can move through the vacuum of the second chamber into the guide. In one embodiment, the activator may include a plasma unit (as described herein). In such embodiments, the plasma unit may include an opening and / or nozzles so that the plasma component can be ejected from the opening and / or nozzles into the vacuum of the second chamber.

[0084] It should be noted that the components emitted in a beam from the activator may contain a relatively wide angular distribution.

[0085] In one embodiment, the apparatus may include a beam shaper for shaping the beam of components emitted from the activator. The beam shaper may include, for example, a collimating element for collimating the emitted beam. The beam shaper may include, for example, a funnel-shaped skimmer. The skimmer may include, for example, a shape known as a molecular beam skimmer. The skimmer may enable narrowing the angular distribution of the beam emitted from the activator. Thus, the skimmer may enable collimating the emitted beam.

[0086] In one embodiment, the beam shaper can be positioned such that the shaped beam can be substantially collimated within the entrance aperture of the guide. In connection with this, the beam diameter can, for example, be entirely contained within the entrance aperture of the guide.

[0087] In one embodiment, the apparatus may include at least one reaction gas vessel for supplying a precursor gas, the at least one reaction gas vessel being configured to store at least one of a reaction gas containing a halide, a reaction gas containing oxygen, or a reaction gas containing hydrogen. It should be noted that the precursor gas may include the reaction gas from the reaction gas vessel. In this regard, the apparatus may include, for example, a gas piping system for supplying the reaction gas from the at least one reaction gas vessel to the activator.

[0088] The reaction gas vessel may be adapted to reliably store, for example, reaction gases containing halides. For example, the reaction gas vessel may include an inner coating so that the gas containing the halide cannot (substantially) interact with the (internal) material of the reaction gas vessel. The gas containing the halide may contain at least one halogen atom. For example, the gas containing the halide may contain at least one of XeF2, CF4, CCl4, Cl2, HCl, HF, I2, HI, Br2, HBr, NOCl, NOF, ClNO2, FNO2, PCl3, PCl5, PF3, and SF6.

[0089] The reaction gas vessel can be adapted to reliably store, for example, an oxygen-containing reaction gas. For example, the reaction gas vessel may include an inner coating to prevent the oxygen-containing gas from (substantially) interacting with the (internal) material of the reaction gas vessel. The oxygen-containing gas may contain at least one oxygen atom. For example, the oxygen-containing gas may contain at least one of O2, H2O, H2O2, N2O, NO, NO2, and HNO3.

[0090] The reaction gas vessel can be adapted to reliably store, for example, a reaction gas vessel containing hydrogen. For example, the reaction gas vessel may include an inner coating to prevent the hydrogen-containing gas from (substantially) interacting with the (internal) material of the reaction gas vessel. The hydrogen-containing gas may contain at least one hydrogen atom. For example, the hydrogen-containing gas may contain at least one of H2, NH3, and CH4.

[0091] In one embodiment, the apparatus may include two or more reaction gas vessels for supplying precursor gases, and the apparatus is configured to supply a predetermined combination of two or more reaction gases as precursor gases. For example, the apparatus may include a gas piping system so that a predetermined ratio of reaction gases can be supplied as precursor gases (e.g., in an activator). For example, the apparatus may be configured to supply a first reaction gas and a second reaction gas as precursor gases, and the first and second reaction gases may have a predetermined ratio of X:Y. This ratio may include the ratio of the amount, mass, or number of molecules (and / or atoms) of each reaction gas. In another embodiment, the apparatus may be configured to supply the first reaction gas, the second reaction gas, and the third reaction gas in a predetermined ratio of X:Y:Z (e.g., a mass ratio of 5:4:1, 3:2:1, or other appropriate ratio). It should be noted that the apparatus may also supply more than four types of reaction gases to form the precursor gas.

[0092] This configuration allows different types of precursor gases to be supplied as raw materials, enabling the generation of various components (e.g., various radicals and / or compounds) from the precursor gas. Therefore, the apparatus according to the present invention can enable the generation of various possible reactions within the activator.

[0093] For example, the apparatus can be configured to generate at least one radical from among fluorine radicals, chlorine radicals, oxygen radicals, and nitrogen radicals, based on a suitable precursor gas.

[0094] For example, the apparatus can be configured to generate at least one compound from among compounds F2, O3, OF, O2F2, O2F, OF2, O4F2, O3F2, ClO2, ClO, and Cl2O, based on a suitable precursor gas. In further embodiments, the apparatus can be configured to generate halogenated oxides and / or radicals of the above compounds (for example, halogenated oxides and / or radicals of at least one compound from among compounds F2, O3, OF, O2F2, O2F, OF2, O4F2, O3F2, ClO2, ClO, and Cl2O).

[0095] For example, the apparatus can be configured to generate interhalogen compounds (e.g., ClF, ClF3, ClF5, and / or further interhalogen compounds).

[0096] In one embodiment, the beam unit can be configured to locally focus a particle beam over an object during processing. For example, this may enable raster scanning of the object with the particle beam. Raster scanning may involve scanning a work area of ​​the object consisting of various predetermined pixels. The work area may include a portion of a sub-region that will be exposed to the components. For raster scanning, the focused particle beam can be directed over all pixels. However, if a pixel is not to be exposed to particles, the beam unit can (temporarily) turn off the particle beam (sometimes called blanking). If a pixel is to be exposed to particles, the beam unit can (temporarily) turn on the particle beam. In another embodiment, the device can also be configured to perform vector scanning with a particle beam (as known in the art).

[0097] In one embodiment, the beam unit can be configured so that the focal region of the particle beam on an object includes regions having diameters of up to 10 μm, up to 1 μm, up to 500 nm, up to 100 nm, up to 10 nm, and / or up to 1 nm. In one embodiment, the diameter of the focal region achievable by the beam unit may include at least 0.5 nm.

[0098] In one embodiment, the beam unit can be configured so that the resolution of the focused particle beam includes resolutions of less than 10 μm, less than 1 μm, less than 500 nm, less than 100 nm, less than 10 nm, and / or less than 1 nm. In one embodiment, the resolution achievable by the beam unit may include at least 0.5 nm.

[0099] In one embodiment, the beam unit can be configured to deliver a particle beam to a specific subregion of an object. For example, the particle beam can be delivered to one or more locations within the specific subregion without requiring the object to be spatially repositioned or adjusted. For example, the specific subregion of the object may include the field of view of the beam unit. The particle beam can be positioned within the field of view on the object based on the control of the beam unit, for example. For example, the particle beam can be deflected and / or focused within the field of view without requiring spatial adjustment of the object.

[0100] A specific subregion of a beam unit (e.g., a field of view) can be defined by a rectangular region (although other shapes of the specific subregion are also possible). For example, a field of view may include a lateral range (e.g., a lateral range along one side of the rectangular region of the field of view). A lateral range along one side of the field of view may include, for example, up to 20 μm, up to 10 μm, up to 8 μm, up to 7 μm, up to 5 μm, up to 4 μm, up to 3 μm and / or up to 2 μm.

[0101] In one embodiment, a specific subregion (e.g., field of view) provided by the beam unit may include areas defined by (exemplary) dimensions of 20 μm × 20 μm, 10 μm × 10 μm, 8 μm × 8 μm, 7 μm × 7 μm, 5 μm × 5 μm, 4 μm × 4 μm, 3 μm × 3 μm, and / or 2 μm × 2 μm. For example, the field of view may be substantially rectangular (e.g., square) in shape with dimensions of 8 μm × 8 μm.

[0102] In one embodiment, the apparatus can be configured to remove material from an object based at least partially on a locally supplied component and particle beam. For example, the apparatus can be configured for particle-induced etching of material from an object by supplied components. In this regard, the apparatus can be configured to continuously supply components in the reaction region of an object while a beam unit scans various positions (e.g., pixels) within the reaction region to induce an etching reaction in the vicinity of an incident (e.g., focused) particle beam.

[0103] For example, the apparatus can be configured for (focused) electron beam-induced etching of an object by a component (for example, referred to as (F)EBIE). In such embodiments, the beam unit can be configured to supply an electron beam as a particle beam.

[0104] For example, the apparatus can be configured for (focused) ion beam-induced etching and / or milling of an object by its components. In such embodiments, the beam unit can be configured to supply an ion beam as a particle beam.

[0105] For example, the apparatus can be configured for electron beam and ion beam induced etching / milling of an object by its components. In such embodiments, the beam unit can be configured to supply electron beams and ion beams.

[0106] In some embodiments, a device without a beam unit may be conceivable. For example, an object can be processed by locally supplying components onto the object.

[0107] In one embodiment, the apparatus may include a control unit for controlling various parts and / or units of the apparatus (as described herein). The control unit may be configured to control, for example, the activator of the apparatus, beam units, guides, object holders, or at least one of one or more gas pipeline systems. The control unit may include, for example, a computer and / or computing unit capable of data processing and / or transmitting control signals to various parts and / or units of the apparatus.

[0108] In one embodiment, the apparatus can be configured to repair an object by removing its material. For example, the apparatus can be configured to repair a lithography mask.

[0109] A second aspect relates to a further apparatus for processing an object. The apparatus may include an activator for activating a precursor gas to generate components from the precursor gas, and a beam unit for locally supplying a focused particle beam onto the object. It should be noted that all aspects of the apparatus according to the first aspect described herein are also applicable as appropriate to the apparatus according to the second aspect.

[0110] However, the apparatus according to the second embodiment does not necessarily have to include the guides described herein for the first embodiment. For example, the components may be introduced globally throughout the object by the apparatus according to the second embodiment. For example, an activator may be positioned adjacent to the first chamber containing the object holder. An opening, nozzle and / or injection system between the activator and the first chamber may be included in the apparatus for introducing the components onto the object (globally).

[0111] However, the apparatus according to the second embodiment may be configured to supply a focused particle beam (as described herein) so as to enable (nevertheless) very localized processing of an object. In some applications, it may not be necessary to supply the generated components locally. However, in some applications, the particle-induced reaction may need to be confined to a narrow spatial working area that the particle beam needs to scan. The working area may include dimensions such as less than 10 μm, less than 1 μm, less than 500 nm and / or less than 100 nm and / or less than 60 nm. To ensure that portions of such narrow working areas (e.g., pixels) are processed, a focused particle beam can be supplied by a beam unit. In this regard, the beam unit may include a focusing unit adapted to focus the particle beam to the focal area and / or resolution described herein. The (narrow) working area may include, for example, structures and / or defects of an object that need to be processed (e.g., structures of a mask, wafer and / or microchip).

[0112] A third aspect relates to a method for processing an object. The method may include activating a precursor gas to generate components from the precursor gas, locally supplying the components onto the object, and supplying a particle beam onto the object.

[0113] In one embodiment, the component can be supplied onto a partial region of an object such that only a substantially partial region is exposed to the component, and the particle beam is supplied within the partial region.

[0114] In one embodiment, the method can be carried out using an apparatus according to the first embodiment (and / or second embodiment).

[0115] In one embodiment, the method may include removing material from an object based at least partially on its components and a particle beam.

[0116] In one embodiment, activating the precursor gas may include forming a plasma of the precursor gas.

[0117] In one embodiment, activating the precursor gas may include ionizing the precursor gas.

[0118] In one embodiment, the method may further include supplying a predetermined combination of two or more reaction gases as a precursor gas for generating a predetermined component thereon.

[0119] In one embodiment, the method may include filtering out a specific component from among several components generated from a precursor gas so that the specific component is locally supplied onto an object.

[0120] In one embodiment, the method may involve continuously supplying a component and a particle beam locally onto an object. Thus, the component and particle beam can be supplied onto the object in a single processing step. However, the particle beam may be (briefly) blanked during this continuous processing, and nevertheless, the component can be continuously supplied onto the object (e.g., continuously emitted onto a partial region). Thus, separate processing can be avoided, where only a partial region of the object is first exposed to the component, and then the partial region is processed only by the particle beam (without supplying the component). Such separate processing would constitute a long processing time, in which case the effect of the component on the material does not persist until the particle beam is guided onto the partial region, thereby preventing any particle-induced reaction from occurring at all or only at a relatively low efficiency (e.g., a smaller etching rate and / or only one etching step is possible). The continuous method according to the present invention can not only enable etching of one or more atomic layers of an object, but also enables continuous etching because the component can be continuously supplied by the particle beam, thereby making it possible to achieve various etching depths within a single processing step.

[0121] In one embodiment, the method may include changing at least one particle beam parameter during processing. For example, the method may include changing the focus of the particle beam. In another embodiment, the method may include changing the beam current of the particle beam and / or the acceleration of the particles.

[0122] In one embodiment, the method can be used to repair an object. For example, defects in an object can be repaired by removing the material from the object.

[0123] A fourth aspect relates to a method for processing an object. The method may include activating a precursor gas to generate components from the precursor gas, supplying the components onto the object, and focusing a particle beam onto the object. For example, the method may include supplying the components globally over the entire object. In addition to or instead of this, the method may also include supplying the components locally onto the object (as described herein).

[0124] In some embodiments, the methods of the third and / or fourth embodiments can be implemented as methods for processing objects for lithography, methods for processing semiconductor-based wafers, and / or methods for processing microchips.

[0125] The fifth aspect relates to a computer program. The computer program may include instructions that, when executed, perform the method of the third aspect (and / or any other aspect described herein).

[0126] In one embodiment, a computer program, when executed by a computer and / or apparatus according to the first embodiment (and / or apparatus according to any other embodiment described herein), can cause the computer and / or apparatus to perform any method according to any embodiment described herein.

[0127] Further embodiments relate to a medium (non-transient storage) containing the computer program described herein.

[0128] The devices described herein can be configured to implement the methods and / or computer programs described herein. For example, the devices according to the present invention can be configured to receive instructions from an executed computer program that can cause it to perform a method adapted to the device. For example, each device may include a storage medium containing a computer program, and the device can execute the computer program (for example, by its control unit). However, the computer program may be stored externally (for example, on a server, in the cloud, etc.), in which case each device may include a receiving unit for receiving instructions from a computer program executed externally to perform a method adapted to the device.

[0129] It should be noted that the method steps (or computer program steps) described herein may include all embodiments described herein, even if they are not explicitly described as method steps and refer to apparatus (or devices or systems). Furthermore, the apparatus (or systems or devices) outlined herein may include means for carrying out all embodiments outlined herein, even if they are described in the context of method steps (or computer program steps).

[0130] Whether described as a method step, a computer program, or / or means, the functions described herein can be implemented in hardware, software, firmware, and / or combinations thereof. When implemented in software / firmware, the functions can be stored or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable medium includes both computer storage media and communication media, including any media that facilitate the transfer of computer programs from one location to another. Storage media can be any available media accessible by a general-purpose or dedicated computer. For example, but not limited to, such computer-readable storage media may include RAM, ROM, EEPROM, FPGA, CD / DVD or other optical disk storage, magnetic disk storage or other magnetic storage devices, solid-state devices, or any other media that can be used to carry or store desired program code means in the form of instructions or data structures, and that are accessible by a general-purpose or dedicated computer or general-purpose or dedicated processor. The control units described herein may be implemented in hardware, software, firmware, and / or combinations thereof, for example, using one or more general-purpose or dedicated computers and / or one or more general-purpose or dedicated processors.

[0131] A fifth aspect relates to an object processed by the methods described herein (for example, the methods according to the third and / or fourth aspects). The object may include an object for lithography (for example, a mask and / or mask blank), a wafer (for example, semiconductor-based) (as described herein), and / or a microchip.

[0132] A sixth aspect relates to a lithography method for a wafer (e.g., semiconductor-based), comprising lithographically transferring a pattern associated with an object for lithography onto the wafer, wherein the object for lithography has been processed by the method described herein (e.g., the method according to the third and / or fourth aspects). The lithographic transfer may include a lithography method (e.g., EUV lithography, DUV lithography, i-line lithography, etc.) for which the object for lithography is designed. For example, the method may include providing a radiation source capable of emitting electromagnetic radiation (e.g., EUV radiation, DUV radiation, i-line radiation, etc.). The method may further include providing a resist layer (e.g., including a photosensitive resist) on the wafer. The lithographic transfer may be based at least in part on radiation from the radiation source and providing the resist layer. For example, the object for lithography can be irradiated by the radiation source so that the pattern of the object can be imaged onto the resist layer. [Brief explanation of the drawing]

[0133] [Figure 1] This is a schematic diagram illustrating an example of the apparatus according to the present invention. [Figure 2] This figure shows a first embodiment of a part of the apparatus according to the present invention, including an activator. [Figure 3] This figure shows a second embodiment of a part of the apparatus according to the present invention, including an activator. [Figure 4] This figure shows a third embodiment of a part of the apparatus according to the present invention, including an activator. [Figure 5] This figure shows one embodiment of a part of the apparatus according to the present invention, including a guide, an object, and a beam unit. [Modes for carrying out the invention]

[0134] Figure 1 shows a schematic diagram illustrating an example of the apparatus 100 according to the present invention. As described herein, the apparatus 100 can be used to process an object O. The object O may include a lithography mask or mask blank (as described herein). The object O may also include a wafer and / or microchip (as described herein).

[0135] First, let's give a brief overview of the device.

[0136] The apparatus 100 may include a first chamber K1 in which an object O can be placed for particle-induced processing. In connection therewith, a particle beam B can be supplied onto the object O in the first chamber. The apparatus 100 may further include a second chamber K2. The second chamber may include an activator A for activating a precursor gas to generate components from the precursor gas. The first chamber K1 and the second chamber K2 can be coupled via a guide G so that material can be transferred from the second chamber to the first chamber via the guide G. For example, components generated from the precursor gas can be transferred from the second chamber K2 to the first chamber K1 for particle-induced processing of the object O.

[0137] The following is a more detailed description of the exemplary apparatus 100 in reference to the exemplary process sequence according to the present invention.

[0138] The apparatus may include one or more reaction gas vessels, each capable of containing a different reaction gas. The apparatus in Figure 1 shows three exemplary reaction gas vessels 101, 102, and 103. The first reaction gas vessel 101 can store the first reaction gas. The second reaction gas vessel 102 can store the second reaction gas. The third reaction gas vessel 103 can store the third reaction gas. For example, the first reaction gas may include a plasma initiation gas (e.g., a gas containing argon). For example, the second reaction gas may include a gas containing a halide. For example, the third reaction gas may include a gas containing oxygen. The apparatus may also include a fourth reaction gas vessel (not shown), in which case the fourth reaction gas stored in the fourth reaction gas vessel may include hydrogen. It should be noted that the reaction gases may also include a halide and oxygen, or a halide and hydrogen, or oxygen and hydrogen, or a halide, oxygen, and hydrogen. In some embodiments, only one, two, or three gas containers may be provided, or more than four gas containers may be provided.

[0139] Each reaction gas vessel can be coupled to its respective valve. In Figure 1, the first reaction gas vessel 101 can be coupled to the first valve 1101. The second reaction gas vessel can be coupled to the second valve 1102. The third reaction gas vessel can be coupled to the third valve 1103. The first, second, and third valves can be coupled to the activator valve 1104. The activator valve 1104 can be coupled to the activator (for example, to the internal chamber of activator A). The valves can be used to control the gas flow rate of the reaction gas into the activator in a defined manner. The valves that control the flow rate of the reaction gas into the activator can be considered as the gas pipeline system of apparatus 100, controllable by the control unit of apparatus 100.

[0140] For example, a valve can be used to control which reaction gases can flow into activator A. The reaction gases released into the activator can form the precursor gases described herein. In one embodiment, the first, second, and third reaction gases can be released into activator A. Therefore, the precursor gas in this embodiment will be formed from the first, second, and third reaction gases.

[0141] It should be noted that, via valves, it is possible to control the release of two or more reaction gases into activator A so that a predetermined ratio of reaction gases is present in activator A. For example, the first, second, and third reaction gases can be transferred into activator A via valves so that a predetermined ratio of reaction gases is present in activator A. For example, the ratio of the first, second, and third reaction gases can be given in the form X:Y:Z, and any ratio can be implemented by the apparatus. For example, the ratio of the first, second, and third reaction gases can be 5:4:1 (or any other suitable ratio that can be obtained based on experimental analysis of the processing described herein).

[0142] In summary, the apparatus 100 can enable a predetermined gaseous mixture to exist as a precursor gas in the activator A through the control of a reaction gas vessel and a valve.

[0143] In one embodiment, the apparatus can be configured to process an object using components generated from a precursor gas and / or the precursor gas itself.

[0144] For example, the apparatus can be configured to deliver a precursor gas locally onto an object via guide G and / or a similar but separate guide (not shown). For example, the precursor gas can be delivered to chamber K1 without passing through activator A (not shown). In another embodiment, the precursor gas can be delivered to chamber K1 by passing through an activator, in which case the activator is not activated so that the precursor gas is not activated so that it is delivered locally onto the object (not shown).

[0145] All embodiments described herein for processing an object by its components are also applicable, for example, to processing an object by the precursor gas itself.

[0146] For example, the properties and / or features described herein for a guide (for locally supplying components onto an object) may also apply to a guide for locally supplying a precursor gas onto an object.

[0147] For example, a guide for locally supplying components onto an object can also be used as a guide for locally supplying precursor gases onto an object.

[0148] However, the guide for locally supplying the precursor gas onto the object can be, for example, a separate guide from the guide for locally supplying the component onto the object. It should be noted that, in this embodiment, the features of the guide for locally supplying the component onto the object as described herein can be (at least partially) the features of the guide for locally supplying the precursor gas onto the object.

[0149] Activator A may include a plasma unit. The plasma unit may be configured to ignite a plasma of a precursor gas. To this end, the plasma unit can be any configuration capable of igniting a plasma of a gaseous mixture. For example, the plasma unit may include two electrodes within its internal chamber. The precursor gas received by activator A may be present between these two electrodes. To excite the precursor gas so that the plasma of the precursor gas is ignited, the apparatus may apply an electric field (having a specific power and frequency) between the two electrodes. The plasma unit may include a magnetic field generator that exposes the plasma to a magnetic field to further adapt the plasma. The plasma unit may be configured so that plasma filamentation is suppressed or absent.

[0150] A plasma-starting gas (e.g., argon) present in the precursor gas can help induce a plasma in the precursor gas. For excitation, the electric field frequency can include frequencies up to 13.56 MHz. The frequency can also be in the range of 40 kHz to 100 kHz. The frequency can also include frequencies up to 2.45 GHz. The plasma excitation power can be in the range of 100 W to 1600 W. The pressure required to generate the plasma can be, for example, atmospheric pressure to a maximum of 1 * 10⁻¹⁰ -4 It can be defined as the range of mbar.

[0151] The plasma generated by igniting a precursor gas can produce components that were not present in the (original) precursor gas itself. For example, the plasma components may include (highly) reactive species and / or new compounds that were not present in the (unactivated) precursor gas (or reaction gas vessel). For example, the plasma can generate free radicals that may be highly reactive with the material of object O. For example, the generated radicals may be neutral in charge. However, the plasma can also generate charged radicals (e.g., positively or negatively charged radicals). The generated radicals can be supplied locally onto the object by the apparatus for particle-induced reactions combined with the radicals (as described herein).

[0152] As described herein, the plasma can also generate certain novel compounds as components that can be obtained based on the supply reaction gas that forms the precursor gas.

[0153] However, not all components of the plasma may be useful for particle-induced reactions on object O. In this regard, the apparatus can be configured to filter out certain components from the plasma generation.

[0154] For example, the plasma unit may be contained within a second chamber K2. The second chamber K2 may include a vacuum chamber, and the plasma unit may be located within the vacuum chamber (or at least a portion of the plasma unit may be located within the vacuum chamber). The plasma unit may include openings and / or nozzles for ejecting one or more components of the plasma from the plasma unit into the vacuum chamber of the second chamber K2. The plasma unit may also include an ejection system which may include one or more openings and / or nozzles for ejecting one or more components into the vacuum chamber.

[0155] Therefore, the components emitted from the plasma unit can move freely within the vacuum chamber. The emitted components can form a beam with a wide angular distribution (for example, depending on the size of the aperture or the characteristics of the nozzle). The entrance aperture of the guide G can be positioned within the path of the generated components so that the components reach the entrance aperture.

[0156] The second chamber K2 may further include a filter F placed within it to filter out certain components. The filter F may be placed between the plasma unit and the entrance aperture of the guide G. The filter F may include an ion filter and / or a neutralizing plate. The filter F may be configured so that only specifically charged components can be coupled into the guide G. For example, an ion filter may be configured to apply an electric field and / or a magnetic field to deflect one or more specifically charged components so that only desired components can be coupled into the guide. For example, an ion filter may deflect positively and negatively charged components from the entrance aperture of the guide G so that only (substantially) neutral components can be coupled into the guide G.

[0157] The filter F may also include an electrically groundable neutralizing plate. As described herein, charged components can therefore be absorbed by the neutralizing plate, and neutral components can diffuse into the guide G through the neutralizing plate.

[0158] Guide G may include a guide valve 1105. The guide valve 1105 can be used to control the flow rate of the generated component within Guide G. Therefore, the guide valve 1105 can be used to control the flow rate of the component into the first chamber K1, and thus to control the flow rate of the generated component onto object O.

[0159] Figure 1 shows the guide G extending into the first chamber K1. The guide G extends such that its exit opening is positioned near the object O. Therefore, the generated components can be supplied locally onto the object.

[0160] Furthermore, Figure 1 schematically shows the particle beam B in the first chamber K1. It should be noted that a focused particle beam is schematically illustrated. The particle beam B can be supplied locally within the region where the material-generating components of an object are supplied (as described herein). The particle beam B may include an electron beam. The apparatus 100 can be configured, for example, to induce (focused) electron beam-induced etching by the supplied material-generating components. The particle beam B may also include an ion beam. The apparatus 100 can be configured, for example, to induce (focused) ion beam-induced etching by the supplied material-generating components. The apparatus can also be configured to supply two or more particle beams (e.g., a dual-beam configuration), in which case, for example, an electron beam and an ion beam can be supplied into the first chamber K1.

[0161] As described herein, particle-induced reactions using generated components may be more effective than particle-induced reactions using the precursor gas alone.

[0162] In other words, compounds specifically generated from radicals or precursor gases may be more reactive with respect to the surface of object O. The generated components may have a higher potential for chemiadsorption on the object than, for example, the precursor gas itself. Therefore, the residence time of the generated components on the object may be relatively longer than the residence time of the precursor gas. Thus, the concentration of the generated components on the object may be locally higher and / or more reliably supplied, thereby enabling more effective particle-induced reactions (e.g., faster etching and / or improved etching of highly resistant materials).

[0163] Conventional methods sometimes rely on localized particle-induced etching using simple etching gases supplied to the substrate, where the etching gas contains relatively non-reactive species. For example, the etching gases in common methods may not contain radicals (or may contain only native radicals such as NO or NO2). In such methods, the initial interaction with the substrate consists mainly of physiadsorption. Thus, the etching gas components may accumulate on the substrate by somewhat weak bonding. Consequently, physiadsorbed molecules of the etching gas may spontaneously desorb (easily) from the substrate surface, which may reduce the efficiency of the particle-induced reaction (due to fewer available reactants). Spontaneous chemiadsorption (at least partially) may occur. Chemiadsorption can constitute a stronger bond of the etching gas components to the substrate. However, the degree of spontaneous chemiadsorption in common methods can be relatively low (for example, because physiadsorption may nevertheless be dominant due to the non-reactive etching gas). It should be noted that actual activation of the etching gas by a particle beam may occur after the etching gas has been supplied to the substrate. However, the particle beam can also actively cause the desorption of physiadsorbed molecules from the substrate surface. Therefore, the etching gas required for particle-induced reactions can be (at least partially) desorbed by the particle beam itself. Consequently, the efficiency of common methods may be limited due to readily desorbable molecules that (primarily) bind to the substrate by physiadsorption.

[0164] However, the present invention makes it possible to supply highly reactive components (e.g., radicals and / or highly reactive compounds) generated from a precursor gas. Therefore, the possibility of chemiadsorption of the generated components with the material of object O can be increased (while the possibility of physiadsorption of the generated components with the material of object O can be decreased). For example, components can be generated such that chemiadsorption primarily governs the interaction between the components and the surface of object O. Therefore, desorption of components from the surface of object O can be minimized, taking into account particle-induced processing of the object. Thus, particle-induced reactions by the components may be more efficient (e.g., etching may be faster).

[0165] Figure 2 shows a first embodiment of a part of the apparatus according to the present invention, including an activator. Specifically, Figure 2 shows an exemplary configuration of the second chamber K2. Compared with Figure 1, the apparatus in Figure 2 does not include a filter. The activator A may include a plasma unit that can eject a plasma component C into the vacuum chamber of the second chamber K2. The entrance opening of the guide G can be positioned in the path of the movement of component C so that component C can be coupled into the guide G. For example, in the configuration of Figure 2, components C with various charges can be coupled into the guide. In such embodiments, the guide G can be charged, as components C with a net charge other than zero can be absorbed by the guide G. In such configurations, since various reactive components may interact with the guide, the apparatus may include an extremely inert guide (e.g., an extremely inert inner wall). For example, in such configurations, the inner wall of the guide may include a resistive coating (e.g., a Teflon coating). The resistive coating can ensure the long-term presence of components within the guide. For example, the coating can be implemented to minimize reactions with components so that components cannot be easily absorbed or accumulated on the inner wall.

[0166] Figure 3 shows a second embodiment of part of the apparatus according to the present invention, including an activator. Specifically, Figure 3 also shows an exemplary configuration of the second chamber K2. Compared with Figure 2, the guide G in Figure 3 is set to a predetermined potential R. For example, the predetermined potential may include the electrical ground potential. For example, the predetermined potential may include a zero-volt potential. In such embodiments, the guide G can function as a filter. That is, components C of various charges can be coupled into the guide G (as described for Figure 2). However, since the guide G can be electrically grounded to the predetermined potential R, components C with positive or negative net charges can be passed towards the guide and thus absorbed by the guide. Thus, mainly neutral components C can be guided to the first chamber K1 and guided onto the object O. The configuration in Figure 3 can also be configured such that the guide G is grounded relative to the first chamber K1. Thus, the possibility of the guide G inducing a charging effect in the first chamber can be minimized. For example, a charged guide G may interact with the particle beam B and / or object O in an undesirable manner. Therefore, the configuration shown in Figure 3 can minimize the potential interference effect of the charged guide G in the first chamber K1. For example, the charged guide G may deflect the particle beam B of charged particles. Such deflection can be minimized (or eliminated) by electrically grounding the guide G (as described herein).

[0167] Figure 4 shows a third embodiment of a part of the apparatus according to the present invention, including an activator. Specifically, Figure 4 also shows an exemplary configuration of a second chamber K2. Compared to Figure 2, the filter F and beam shaper S are positioned between the activator A (e.g., the plasma unit) and the entrance aperture of the guide G. The filter F may include an ion filter as described herein. Component C moving from the plasma unit may be deflected by the filter, for example, depending on its charge. For example, only neutral component C can pass through the ion filter unaffected. A skimmer may be positioned as the beam shaper S along the further movement path. The skimmer may include a funnel shape. For example, the skimmer may include a molecular beam skimmer. The skimmer may be positioned in the apparatus such that the angular distribution of (e.g., neutral) component C that has passed through the filter F is reduced. For example, the skimmer may be configured to collimate the beam of component C. This allows for more effective coupling of component C to the guide. For example, the skimmer may allow the beam diameter of component C to substantially fit within the entrance aperture of the guide.

[0168] Figure 5 shows some embodiments of the apparatus according to the present invention, including a guide G, an object O, and a beam unit BU. It should be noted that the first chamber K1 is shown including the object O. The beam unit BU can, for example, extend at least partially into the first chamber K1. The beam unit BU may include, for example, one or more beam shaping elements and / or beam focusing elements. The beam unit BU may include, for example, a particle source for a particle beam B. For example, if the particle beam B includes an electron beam, the beam unit BU may include beam shaping elements and / or focusing elements known from scanning electron microscopy. For example, if the particle beam B includes an ion beam, the beam unit BU may include beam shaping elements and / or focusing elements known from focused ion beam apparatuses.

[0169] The beam unit BU can be configured to adapt various beam parameters for particle-induced processing of an object. The beam unit BU can also be configured for imaging purposes. For example, the beam unit BU may be configured to generate an image of an object O using a particle beam.

[0170] Furthermore, Figure 5 schematically illustrates the local extent of component C on object O in this case as well. The exit aperture of guide G can be positioned near object O, and the exit aperture can emit component C onto object O. Therefore, due to the position of guide G, the component can only be supplied to a subregion SO of the object. Other regions of object O cannot be exposed to component C. The beam unit BU can be configured to guide particle beam B into (part of) subregion SO in order to induce a particle-induced reaction within the subregion. If particle beam B is guided onto a portion outside subregion SO, no (substantial) amount of component C can exist outside subregion SO, and therefore (substantial) no particle-induced reaction will occur.

[0171] For example, the apparatus has a global pressure of 1*10 in the first chamber K1. -7 mbar~1*10 -4 It can be configured to include pressures in the range of mbar. This pressure can be maintained while the material is being processed by the components. However, local pressures within a subregion (e.g., local pressure of component C) may include relatively higher pressures. For example, the local pressure of component C may be 1 * 10⁻¹⁰ mbar. -3 mbar~10* -2 This may include pressure in mbar.

[0172] For example, a beam unit BU can be configured to set a specific extraction voltage of a particle beam (e.g., an electron beam and / or an ion beam) for particle-induced processing. The extraction voltage may include, for example, an extraction voltage in the range of 0.1kV to 3kV, preferably 0.15kV to 1kV, more preferably 0.2kV to 0.8kV, and most preferably 0.3kV to 0.6kV.

[0173] For example, a beam unit BU can be configured to set a specific beam current for a particle beam (e.g., an electron beam and / or an ion beam) for a particle-induced reaction. The beam current may include, for example, a beam current in the range of 1 to 500 pA, preferably 2 to 300 pA, more preferably 5 to 100 pA, and most preferably 10 to 60 pA.

[0174] The following describes some processing examples that can be performed using the apparatus according to the present invention.

[0175] For example, object O may include a mask for DUV lithography (i.e., a DUV mask). The DUV mask may include an absorption layer for absorbing DUV light. For example, a pattern element can be formed from the absorption layer on the DUV mask. The absorption layer (and / or a corresponding pattern element) may be positioned on a cover layer of the DUV mask. The absorption layer may include silicon nitride (e.g., SiN). The cover layer may include silicon oxide (e.g., SiO2). It should be noted that the DUV mask may contain mask defects. For example, a portion of the DUV mask that should not contain an absorption layer by design may contain one. Such material can be considered an excess absorber material (sometimes called a dark defect).

[0176] In one embodiment, the method according to the present invention may include removing excess absorbent material from a DUV mask. Therefore, the apparatus can remove excess material, including silicon nitride. In this regard, a relatively high etching selectivity ratio for a cover layer containing silicon oxide may be desired. That is, particle-induced processing needs to remove excess absorbent material without (significantly) eroding / removing adjacent cover layers. For example, to etch silicon nitride on a silicon dioxide layer, the apparatus can supply a specific precursor gas that can be activated as described herein. For example, a suitable precursor gas may include a gaseous mixture of argon, CF4, and O2, each of which can be supplied to the activator by the respective reaction gases. In one embodiment, the ratio of argon, CF4, and O2 in the precursor gas may include a ratio of 5:4:1. This gaseous mixture corresponding to the precursor gas can be activated in the plasma unit of the apparatus. For example, the plasma unit can form a plasma of the precursor gas based on an excitation frequency of 13.56 MHz and a power of 400 W to 100 W. In this case, the plasma of the precursor gas may contain reactive species (e.g., neutral or charged radicals). In one embodiment, neutral species (e.g., neutral radicals) generated in the plasma can be filtered (as described herein) and transferred to an object O via a guide G. Thus, the neutral species may be present in a subregion of the object O. Due to the reactivity of the generated neutral components, chemiadsorption of the neutral components may occur on the surface of the object. Subsequently, a particle beam can be supplied into the subregion in the form of an electron beam to induce electron-induced etching of silicon nitride by the neutral species. Neutral species generated from a gaseous mixture of precursor gases can enable selective etching of silicon nitride relative to silicon oxide.

[0177] It should be noted that the selectivity ratio can be adjusted by changing the ratio of gas components in the precursor gas (for example, by changing the ratio of argon, CF4, and O2 present in the precursor gas). The selectivity ratio can also be adjusted by adapting at least one plasma influence parameter of the plasma unit. The selectivity ratio can also be adjusted by adapting at least one beam parameter of the particle beam B supplied onto object O.

[0178] In another embodiment, object O may include a mask for EUV lithography (i.e., an EUV mask). The EUV mask may include a first absorption layer containing ruthenium (Ru). The EUV mask may further include a second absorption layer containing tantalum (Ta). The first absorption layer can be positioned on top of the second absorption layer. A patterned element can be formed from the first and second absorption layers. The EUV mask may further include a cap layer. The cap layer may contain ruthenium (Ru) and / or rhodium (Rh). The second absorption layer can be positioned on top of the cap layer. Thus, the EUV mask may have a layer stack in the order of, for example, a first absorption layer (containing Ru), a second absorption layer (containing Ta), and a cap layer (containing Ru and / or Rh). It may be desirable to remove a portion of the first absorption layer containing ruthenium without (significantly) eroding / removing the second absorption layer below. Therefore, it may be desirable to etch a portion of the first absorption layer with a relatively high selectivity ratio compared to the second absorption layer. For example, if excess material in the first absorption layer may form dark defects on the EUV mask, it may be desirable to remove them.

[0179] In one embodiment, the method according to the present invention may include removing a ruthenium-containing material with a sufficiently high selectivity relative to a tantalum-containing material. For example, a suitable precursor gas may include a gaseous mixture of Ar, CCl4, and O2. In one embodiment, the ratio of argon to CCl4 and O2 in the precursor gas may be 5:4:1. In another embodiment, a suitable precursor gas may include a gaseous mixture of Ar, Cl2, and O2. In one embodiment, the ratio of argon to Cl2 and O2 in the precursor gas may be 5:4:1. This gaseous mixture corresponding to the precursor gas can be activated in the plasma unit of the apparatus. For example, the plasma unit can form a plasma of the precursor gas based on an excitation frequency of 13.56 MHz and a power of 400 W to 100 W. As described herein, neutral species generated in the plasma can be induced onto a subregion of the object. A particle beam in the form of an electron beam can be supplied into the subregion to induce electron-induced etching of ruthenium by the neutral species. Neutral species generated from a gaseous mixture of precursor gases can enable selective etching of ruthenium into tantalum-containing materials.

[0180] It should be noted that the selectivity ratio can be adjusted by changing the ratio of gas components in the precursor gas (for example, by changing the ratio of argon, CCl4, and O2 present in the precursor gas, or the ratio of argon, Cl2, and O2). The selectivity ratio can also be adjusted by adapting at least one plasma influence parameter of the plasma unit. The selectivity ratio can also be adjusted by adapting at least one beam parameter of the particle beam B supplied onto object O.

[0181] While this disclosure has been described in relation to certain embodiments, it is intended that this disclosure is not limited to the embodiments disclosed, but rather covers a wide range of modifications and equivalent structures that fall within the scope of the attached claims, and that this scope is given the broadest possible interpretation to include all such modifications and equivalent structures as permitted by law.

Claims

1. An apparatus for processing an object (O), An activator (A) for activating the precursor gas to generate component (C) from the precursor gas, A guide (G) for locally supplying the aforementioned component onto the object, A beam unit (BU) for supplying a particle (B) beam onto the object and A device that includes this.

2. The apparatus according to claim 1, wherein the guide is configured to supply the component onto the partial region of the object (O) such that substantially only a partial region (SO) is exposed to the component.

3. The apparatus according to claim 1 or 2, wherein the apparatus has a first chamber (K1) including a holder for the object, and the guide extends at least partially into the first chamber.

4. The apparatus according to any one of claims 1 to 3, wherein, at the processing position of the object, the opening of the guide for discharging the component onto the object is spaced at a maximum distance of 10 cm, 1 cm, 100 μm, or 10 μm from the object.

5. The apparatus according to any one of claims 1 to 4, wherein the inner wall of the guide includes a coating that is substantially resistant to the component.

6. The apparatus according to claim 5, wherein the coating comprises at least one material or a combination thereof, selected from Teflon, steel, plastic, and dielectric.

7. The apparatus according to any one of claims 1 to 6, wherein the activator is separated from the object so that the object does not undergo the activation reaction of the precursor gas.

8. The apparatus according to claim 2, or any of claims 3 to 7 incorporating claim 2, wherein the apparatus has a second chamber (K2) including the activator, and the second chamber and the first chamber are at least partially coupled via the guide so that the components can be transferred from the second chamber to the first chamber.

9. The apparatus according to any one of claims 1 to 8, wherein the activator includes a plasma unit for forming a plasma for activating the precursor gas.

10. The apparatus according to claim 9, wherein the aforementioned component includes the plasma component.

11. The apparatus according to any one of claims 1 to 10, wherein the activator includes a radiation unit that irradiates the precursor gas with electromagnetic radiation so as to ionize the precursor gas in order to activate the precursor gas.

12. The apparatus according to claim 11, wherein the component comprises the component of the ionized precursor gas.

13. The apparatus according to any one of claims 1 to 12, wherein the component comprises radicals and / or compounds that are substantially not present in the precursor gas.

14. The apparatus according to any one of claims 1 to 13, wherein the apparatus includes a filter (F) for filtering out a specific component from among a plurality of components generated from the precursor gas so that the specific component is supplied locally onto the object.

15. The apparatus according to claim 14, wherein the filter (F) includes an ion filter and / or a neutralizing plate.

16. The apparatus according to claim 14 or 15, wherein the apparatus is configured to set the guide to a predetermined potential (R) in order to filter the specific component.

17. The apparatus according to any one of claims 1 to 16, wherein the activator is configured to emit the component in a beam-like manner into the guide.

18. The apparatus according to claim 17, wherein the apparatus includes a beam shaper (S) for shaping the beam of the component emitted from the activator.

19. The apparatus according to any one of claims 1 to 18, wherein the apparatus includes at least one reaction gas vessel (101, 102, 103) for supplying the precursor gas, and the at least one reaction gas vessel is configured to store at least one of a reaction gas containing a halide, a reaction gas containing oxygen, and a reaction gas containing hydrogen.

20. The apparatus according to any one of claims 1 to 19, wherein the apparatus includes two or more reaction gas vessels (101, 102, 103) for supplying the precursor gas, and the apparatus is configured to apply a predetermined combination of two or more reaction gases as the precursor gas.

21. The apparatus according to any one of claims 1 to 20, wherein the beam unit is configured to locally focus the particle beam onto the object during the processing.

22. The apparatus according to any one of claims 1 to 21, wherein the apparatus is configured to remove material from the object at least partially based on the component and the particle beam supplied locally onto the object.

23. A method of processing an object, Activating the precursor gas in order to generate components from the precursor gas, The aforementioned component is supplied locally onto the object, The particle beam is supplied locally onto the object. A method that includes this.

24. The method according to claim 23, wherein the component is supplied onto the partial region of the object such that only a substantially partial region is exposed to the component, and the particle beam is supplied into the partial region.

25. The method according to claim 23 or 24, wherein the method is carried out using the apparatus described in any one of claims 1 to 22.

26. A computer program that includes an instruction which, when the instruction is executed, performs the method according to any one of claims 23 to 25.

27. A computer-readable medium that stores a computer program which, when executed by one or more computers, includes instructions that cause one or more computers to perform the method described in any of claims 23 to 25.

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