Electrostatic chuck and related methods

Abstract

The device may include a layered monolithic structure comprising an insulator and at least one conductive region located within the insulator. The layered monolithic structure does not include any bonding components between the insulator and the at least one conductive element. The layered monolithic structure may further include at least one conduit that does not contain any material. The insulator may include a ceramic material, and the at least one conductive region may include a metallic material, and the ceramic material and the metallic material are co-deposited layer by layer to form the layered monolithic structure.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims the benefit and priority of U.S. Provisional Patent Application No. 63 / 467,041, filed on May 17, 2023, which is hereby incorporated by reference in its entirety for all purposes.

[0002] The present disclosure relates to an electrostatic chuck, and more particularly to an electrostatic chuck capable of withstanding high temperatures and a method of manufacturing the same.

Background Art

[0003] Electrostatic chucks are used to hold and support a substrate in a fixed position by electrostatic force during semiconductor processes. The structure of conventional chucks is based on the manufacture of individual components and subsequent joining of these components to each other. Conventional chucks have low performance at high temperatures due to poor bonding and corresponding loss of mechanical and structural integrity. The performance of conventional chucks is also limited by uneven heat loss and the arrangement of heater elements within the chuck.

Summary of the Invention

[0004] Some embodiments relate to an electrostatic chuck including a laminated monolithic structure including an insulator and at least one conductive element positioned within the insulator.

[0005] In some embodiments, the laminated monolithic structure does not include a joining component between the insulator and the at least one conductive element.

[0006] In some embodiments, the laminated monolithic structure further includes at least one conduit, the at least one conduit being defined by the insulator and containing no material.

[0007] In some embodiments, at least one conduit is a thermal shield structure within the insulator. In some embodiments, the thermal shield structure has the same extent as the outer periphery of the insulator and is adjacent to the outer periphery of the insulator.

[0008] In some embodiments, at least one conduit is at least one of a gas channel, a liquid channel, a connection hole, a threaded hole, a through hole, a void, or any combination thereof.

[0009] In some embodiments, the insulator includes a ceramic material, and at least one conductive element includes a metallic material.

[0010] In some embodiments, an electrostatic chuck in which ceramic material and metal material are deposited layer by layer to form a monolithic structure.

[0011] In some embodiments, the insulator includes at least one of alumina, zirconia, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof.

[0012] In some embodiments, at least one conductive element includes at least one of aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, molybdenum disilide, or any combination thereof.

[0013] In some embodiments, the insulator is about 10 11 It has a resistivity of ohms or more.

[0014] In some embodiments, at least one conductive element includes at least one electrode, the at least one electrode configured to generate an electrostatic field in response to a charge.

[0015] In some embodiments, at least one conductive element extends from a second side of the insulator toward a first side of the insulator such that at least one electrode substantially extends along a plane adjacent to a first side of the insulator.

[0016] In some embodiments, at least one electrode includes a plurality of electrodes, each of which includes a separate conductive path extending through the insulator from a second side of the insulator toward a first side of the insulator, such that the plurality of electrodes substantially extend along a plane adjacent to a first side of the insulator.

[0017] In some embodiments, at least one conductive element further includes at least one heating element, the at least one heating element configured to supply thermal energy to the additively fabricated monolithic structure.

[0018] In some embodiments, at least one conductive element includes a plurality of heating elements, each comprising separate conductive paths that penetrate the insulator and extend from a second side of the insulator to different regions of the additively fabricated monolithic structure, thereby supplying local thermal energy to the insulator.

[0019] In some embodiments, multiple heating elements are located below at least one electrode of the insulator.

[0020] In some embodiments, multiple heating elements are further positioned adjacent to the side walls within the insulator.

[0021] In some embodiments, multiple heating elements are arranged horizontally and / or vertically within the insulator to obtain desired thermal uniformity on the first side surface of the insulator.

[0022] In some embodiments, at least one conductive element includes a temperature measurement probe, a thermocouple, a resistance temperature detector, or other temperature sensing device.

[0023] In some embodiments, at least one conductive element includes a plurality of temperature measurement probes, each of the plurality of temperature measurement probes including a separate conductive path extending through the insulator from a second side of the insulator toward a first side.

[0024] In some embodiments, at least one conductive element includes a dummy structure for providing more uniform thermal, electrical, or physical performance of an electrostatic chuck.

[0025] In some embodiments, at least one conductive element includes a plurality of electrodes, a plurality of heating elements, and a plurality of temperature measurement probes, each of the plurality of electrodes, plurality of heating elements, and plurality of temperature measurement probes having a separate conductive path passing through the insulator from a second side of the insulator toward a first side.

[0026] In some embodiments, at least one conduit includes a lift pin hole defined by the insulator.

[0027] In some embodiments, at least one conduit includes a backside gas delivery hole defined by the insulator.

[0028] In some embodiments, at least one conduit includes a dummy structure defined by the insulator, the dummy structure being configured to provide uniform thermal, electrical, or physical performance of the electrostatic chuck.

[0029] In some embodiments, at least one conduit includes a gas channel defined by the insulator.

[0030] In some embodiments, at least one conduit includes at least one of a mounting fixture, a bolt hole, a flange, a connector, an alignment mechanism, an optical path, or any combination thereof.

[0031] In some embodiments, the first side of the insulator includes a structured pattern comprising a plurality of gas channels.

[0032] In some embodiments, the additively fabricated monolithic structure further includes at least one gas channel located on the first side of the insulator.

[0033] In some embodiments, the first side of the insulator includes a structured pattern comprising multiple embossings.

[0034] In some embodiments, multiple embossings are formed by a coating applied to the first side surface of the insulator.

[0035] In some embodiments, the coating is polished to provide at least one of the following: improved flatness, improved surface finish, improved density, improved precision of the thickness of the insulating layer between at least one conductive element and the first side surface, or any combination thereof.

[0036] In some embodiments, the coating further includes at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear-resistant layer, or any combination thereof.

[0037] Some embodiments relate to a method comprising one or more steps of depositing a ceramic material to form an insulator, and depositing a metallic material to form at least one conductive element located within the insulator. In some embodiments, the ceramic material and the metallic material are co-printed layer by layer to form a monolithic structure.

[0038] In some embodiments, the method further includes applying a coating to the upper surface of the insulator.

[0039] In some embodiments, the method further includes the steps of forming a plurality of embossed surfaces on the upper surface of an insulator, polishing the upper surfaces of at least some of the plurality of embossed surfaces, and forming a coating on at least one of the upper surfaces of at least some of the plurality of embossed surfaces, the upper surface of the insulator, or any combination thereof, or at least one of any combination thereof.

[0040] In some embodiments, the coating is at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear-resistant layer, or any combination thereof.

[0041] Some embodiments of the method include depositing a ceramic material to form an insulator and depositing a metallic material to form at least one conductive element located within the insulator, extending from a second side to a first side of the insulator, wherein the ceramic and metallic materials are co-printed layer by layer to form an additively fabricated monolithic structure.

[0042] In some embodiments, the method includes applying a coating to a first side surface of an insulator, wherein the coating comprises at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear-resistant layer, or any combination thereof.

[0043] In some embodiments, the method further includes polishing a coating on a first side surface of an insulator, wherein the coating is polished to provide at least one of improved flatness, improved surface finish, improved density, improved precision of the thickness of the insulating layer between at least one conductive element and the first side surface, or any combination thereof.

[0044] In some embodiments, the method further includes forming a structured pattern on a first side surface of an insulator, wherein the structured pattern includes a plurality of embossings.

[0045] This disclosure may be better understood by considering the following description of various exemplary embodiments in relation to the attached drawings. [Brief explanation of the drawing]

[0046] [Figure 1] This is a flowchart of a method for forming an electrostatic chuck according to several embodiments. [Figure 2] This is a perspective view of some non-limiting embodiments of the device. [Figure 3] This is a cross-sectional side view of a non-limiting embodiment of the device, according to several embodiments. [Figure 4] This is an exploded view of a non-limiting embodiment of an electrostatic chuck. [Figure 5] Figure 4 is a schematic diagram of different layers included in a non-limiting embodiment of the electrostatic chuck. [Figure 6] Figure 4 is a schematic diagram of different layers included in a non-limiting embodiment of the electrostatic chuck. [Figure 7] Figure 4 is a side cross-sectional view of the electrostatic chuck. [Modes for carrying out the invention]

[0047] This disclosure is open to various modifications and alternative forms, the details of which are shown in the drawings as examples and described in detail. However, it should be understood that the aspects of this disclosure are not intended to be limited to the specific exemplary embodiments described. Rather, the intention is to cover all modifications, equivalents, and alternatives that fall within the spirit and scope of this disclosure.

[0048] Among these disclosed benefits and improvements, other objectives and advantages of this disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of this disclosure are disclosed herein. However, it should be understood that the disclosed embodiments are merely illustrative examples of the disclosure, which can be embodied in various forms. Furthermore, each of the examples given with respect to the various embodiments of this disclosure is intended to be illustrative and not limiting.

[0049] Throughout this specification and the claims, the following terms have the meanings expressly associated herein unless otherwise clearly indicated by the context. The phrases “in one embodiment,” “in one embodiment,” and “in several embodiments” as used herein may refer to the same, though not necessarily, the same, embodiment. Furthermore, the phrases “in another embodiment” and “in several other embodiments” as used herein may refer to different, though not necessarily, different embodiments. All embodiments of this disclosure are intended to be combinatorial without departing from the scope or spirit of this disclosure.

[0050] As used herein, the term "based on" is not exclusive and, unless otherwise explicitly indicated by the context, may be based on additional factors not listed. Furthermore, throughout this specification, the meanings of "a," "an," and "the" include multiple references. The meaning of "in" includes "inside" and "on top."

[0051] As used herein, the term “between” does not necessarily require that an element be located directly next to another element. Generally, the term means a configuration in which one object is sandwiched between two or more other objects. At the same time, the term “between” can describe something that is immediately next to two opposing objects. Thus, in any one or more embodiments disclosed herein, a particular structural component located between two other structural elements is: Can a specific structural component be directly positioned between two other structural elements so that it is in direct contact with both of the other structural elements? Is it possible to position a particular structural component so that it is in direct contact with only one of the other two structural elements, by positioning it directly next to only one of the other two structural elements? Is it possible to arrange a particular structural component indirectly adjacent to only one of the two other structural elements such that it does not directly contact only one of the two other structural elements, but rather that another element exists that places the particular structural component and one of the two other structural elements side by side? A particular structural component may be indirectly positioned between the two other structural elements so that it does not directly contact both of the other structural elements, and other features can be positioned between these structural elements, or Any combination(s) of these is possible.

[0052] As used herein, the term “embedded” refers to the first material distributed throughout and / or within the second material. In some embodiments, the term refers to the first material partially encapsulated within the second material. In some embodiments, the term refers to the first material completely encapsulated within the second material. In some embodiments, the term refers to the first material not exposed to the external environment.

[0053] As used herein, the term “deposition” refers to the formation of a 3D object by coating one or more materials, such as filaments, during an additive manufacturing process. One or more materials are added one layer at a time, and the layers are bonded together using dissolution coating to form a monolithic structure. In some embodiments, the term “deposition” may be placement, printing, co-printing, spraying, extrusion, etc.

[0054] Conventional chucks require adhesives to maintain structural integrity between their different components (e.g., insulating layers, conductive layers, dielectric layers, etc.). The operating temperature range in which conventional chucks can be used is limited, among other things, by the adhesives, which degrade or otherwise deteriorate at high temperatures. Therefore, conventional chucks with these adhesives are not suitable for use at high temperatures, as a corresponding loss of structural and mechanical integrity of the conventional chuck is observed when the adhesive degrades or deteriorates.

[0055] Embodiments disclosed herein overcome at least the problems of conventional chucks by, among other things, providing an electrostatic chuck having a monolithic structure that does not require or contain any adhesive after the manufacturing process of the electrostatic chuck is completed. In some cases, the monolithic structure may include conduits. Such conduits present within the monolithic structure cannot be achieved by conventional manufacturing techniques. Furthermore, the removal of adhesives, or more generally bonding components, offers many advantages, including an expanded operating temperature range in which the electrostatic chuck can be used. For example, the electrostatic chucks disclosed herein can operate at high temperatures, such as, for example, 500°C or higher, without any corresponding loss of structural and / or mechanical integrity. Where used herein, the term “bonding component” refers to a bond other than a bond formed by an additive manufacturing process. For example, in some embodiments, the term “bonding component” does not refer to a bond formed by an additive manufacturing process.

[0056] At least another advantage of the electrostatic chucks disclosed herein is that they can maintain thermal uniformity across the wafer surface to the wafer edge while operating at high temperatures. Conventional chucks typically suffer unbalanced and non-uniform heat loss across the wafer surface and are unable to provide adequate heating force at the wafer edge. Embodiments overcome at least the problems of conventional chucks by providing electrostatic chucks that can be configured to compensate for temperature non-uniformity within the electrostatic chuck. For example, in some embodiments, the electrostatic chuck can be constructed by additive manufacturing to include one or more thermally conductive elements at the positions of the insulators that compensate for the aforementioned temperature non-uniformity. At least another further advantage of the electrostatic chucks disclosed herein is that the electrostatic chucks minimize or avoid metal contamination due to the diffusion of impurities at high temperatures.

[0057] Accordingly, various embodiments of this disclosure provide electrostatic chucks formed by additive manufacturing and methods for forming electrostatic chucks by additive manufacturing.

[0058] Some embodiments relate to an electrostatic chuck comprising an insulator and at least one conductive element. The at least one conductive element is formed from one or more metallic materials and may be located (e.g., embedded) within the insulator to provide thermal uniformity to the surface of the electrostatic chuck and / or to provide optimal dimensions for emitting an electric field. In some embodiments, the insulator includes a ceramic material. In some embodiments, the ceramic material is configured to be an insulating layer located between two or more conductive elements. In some embodiments, the ceramic material is configured to be a dielectric layer located between at least one electrode and the upper surface of the insulator. In some embodiments, the electrostatic chuck further comprises a dielectric coating layer located on the upper surface of the insulator, on the upper surfaces of a plurality of embosseds, or any combination thereof. In some embodiments, the electrostatic chuck further comprises a plurality of embosseds located on the upper surface of the insulator, the plurality of embosseds being formed of a dielectric material. Furthermore, the additive manufacturing process can provide droplet deposition by controlling the thickness and dimensions of the material so that the ceramic material deposited between the conductive elements (e.g., electrodes, heating elements, etc.) can function as a dielectric layer and can also be deposited in the upper region to function as an embossed structure. In some embodiments, the electrostatic chuck is embedded with one or more features positioned and dimensionally to operate at the aforementioned high temperatures, and is formed during a single coating (e.g., a single print) or any combination thereof.

[0059] Some embodiments relate to a device comprising an electrostatic chuck including an insulator and at least one conductive element. In some embodiments, the electrostatic chuck is an additively manufactured monolithic structure. In some embodiments, the additively manufactured monolithic structure does not include a bonding component between the insulator and the at least one conductive element. In this regard, the electrostatic chuck may be able to operate at temperatures above 500°C while maintaining thermal uniformity of the surface of the electrostatic chuck. The degree to which the monolithic structure maintains thermal uniformity may be predetermined by the arrangement of the at least one conductive element located within the insulator. In some embodiments, following the manufacture of the electrostatic chuck by additive manufacturing, the electrostatic chuck may undergo a deposition process such as an atomic layer deposition (ALD) process or a thermal ALD process, and one or more surfaces of the electrostatic chuck are coated with one or more layers. In some embodiments, the deposition process is sufficient to coat all exposed surfaces of the additively manufactured device.

[0060] A laminated electrostatic chuck may not contain bonding components. In this regard, since the monolithic structure of the electrostatic chuck does not contain bonding components within the monolithic structure, the electrostatic chuck can operate at temperatures above 500°C without compromising the integrity of the monolithic structure. In some embodiments, a laminated electrostatic chuck also does not contain bonding components between ceramic components and metal components. In some embodiments, a laminated electrostatic chuck comprises one or more layers formed by selective droplet deposition, where droplets are selectively bonded to form one or more layers, resulting in the formation of a monolithic structure. One or more layers are bonded to adjacent layers during the formation of the electrostatic chuck by selective coating of the melting process, such that the bonding material burns off as a result of the melting process, thereby obtaining a monolithic structure containing ceramic material, metal material, or a combination thereof. Thus, the electrostatic chuck may be formed such that the monolithic structure does not contain bonding components present between one or more layers. In some embodiments, the electrostatic chuck may not contain bonding components between an insulator and at least one conductive region. In some embodiments, the processes applied during the deposition process may include, but are not limited to, at least one of thermal, pressure, electrical, ultrasonic vibration, laser, or any combination thereof.

[0061] While electrostatic chucks can operate at temperatures above 500°C, in some embodiments, the operating temperature range for the electrostatic chuck may be between 0 and 1000°C, or any range or partial range between those ranges. For example, in some embodiments, the operating temperature may be 100-1000°C, 100-650°C, 200-650°C, 300-650°C, 400-650°C, 500-650°C, 100-550°C, 200-550°C, 300-550°C, 400-550°C, 500-550°C, 100-450°C, 200-450°C, 300-450°C, or 400-450°C. In some embodiments, the operating temperature of the electrostatic chuck may be above 500°C. For example, in some embodiments, the electrostatic chuck is configured to operate at temperatures between 500°C and 1000°C, or any range or partial range between those ranges.

[0062] In various embodiments of this disclosure, the electrostatic chuck includes a monolithic structure formed by additive manufacturing to form a single structure having an integral structure. In some cases, the monolithic structure may be a multilayer structure, and each layer of the multilayer structure may be formed from a different material or combination of materials. Furthermore, each layer of the multilayer monolithic structure may include different elements or features. For example, an intermediate layer may include a heater element, another layer may include at least one electrode, and yet another layer may include a conduit or a void without material. The upper layer of the electrostatic chuck may include an embossed and / or dielectric layer, and the bottom layer may include electrical contacts to facilitate electrical connection to the electrostatic chuck. Each of these layers of the multilayer monolithic structure may be formed using an additive manufacturing process. In some embodiments, each layer of the electrostatic chuck is formed in a single additive manufacturing process (i.e., a single print) such that there is no distinct interface between the different layers, but rather there is a gradient where the first material or combination of materials transitions to the second material or combination of materials.

[0063] In some embodiments, the monolithic structure is formed by additive manufacturing and may include one or more regions formed from one or more materials. Each of the one or more materials may be selected, at least in part, for the ability of the monolithic structure to provide thermal uniformity at various operating temperatures without compromising the structural integrity of the monolithic structure, without making it susceptible to mechanical deformation, and without substantially affecting other similar characteristics, and for its ability to withstand high temperatures. In some embodiments, the monolithic structure comprises an additively manufactured structure formed from the deposition of a first material for forming a body and a second material for forming one or more conductive elements within the body. Each of the first and second materials may be selected, in part, for their thermal properties and whether such materials can operate at high temperatures after being formed into the monolithic structure. Furthermore, in some embodiments, the first and second materials are co-printed by additive manufacturing. In some embodiments, the first and second materials may be coated in continuous layers, each layer comprising the first material, the second material, or both, forming a monolithic structure that is not manufactured separately and is not joined together after manufacturing (e.g., retrofitted). In some embodiments, the monolithic structure comprises a three-dimensional ("3D") structure formed from one or more materials selectively deposited during the deposition (e.g., co-printing) of each layer to form a first region and a second region located or embedded within the first region. In this regard, the first and second materials may be co-printed to form a monolithic structure in which the first material forms an insulator and the second material forms at least one conductive element distributed on and / or within the insulator based on one or more operating parameters of the monolithic structure. In exemplary embodiments, the at least one conductive element may include a heating element distributed across the insulator and / or along the sidewalls of the monolithic structure. In another embodiment, at least one conductive element may include at least one heating element distributed within an insulator.

[0064] Monolithic structures obtained from additive manufacturing processes do not include bonding components, so that the monolithic structure is a single structure having an integral structure. In some embodiments, the monolithic structure comprises an additively manufactured structure that cannot be constructed by machining. In some embodiments, the monolithic structure comprises an additively manufactured structure that does not include seams, welded joints, brazed joints, or any combination thereof. Other techniques for forming monolithic structures, such as bonding components, seams, welded joints, brazed joints, and those formed in other similar ways, do not provide monolithic structures having an integral structure and may not be able to operate at such high temperatures. Furthermore, other techniques exist for forming semiconductor process tool components by sintering or glass fritz, etc., but these techniques do not form monolithic structures as described in this disclosure, and instead involve the separate and / or independent formation of components and subsequent bonding of the components after manufacturing.

[0065] Additive manufacturing may involve selectively co-printing ceramic and metallic materials to form a monolithic structure. In some embodiments, the monolithic structure includes ceramic components formed from the ceramic material and metallic components formed from the metallic material. In some embodiments, the ceramic components include an insulator, and the metallic components include at least one conductive element located within the insulator. In some embodiments, the at least one conductive element may be positioned at a predetermined location within the monolithic structure. In some embodiments, for example, an electrostatic chuck may include a thermally conductive element that forms a thermally conductive region within the insulator and is positioned to provide thermal uniformity from edge to edge of the electrostatic chuck and to the wafer. In another example, the multiple thermally conductive elements may include sidewall heaters to improve thermal performance at the edges of the electrostatic chuck.

[0066] In some embodiments, at least one conductive element may have dimensions based on desired operating characteristics of the electrostatic chuck. For example, at least one conductive element may have dimensions to optimize the thermal uniformity of the electrostatic chuck based on the dimensions of the insulator. Therefore, the dimensions and arrangement of the insulator and at least one conductive element of the electrostatic chuck are not intended to be limiting and may include any of several dimensions and arrangements based on application, operating characteristics (e.g., thermal characteristics, clamping force, electrical resistance, etc.), or any combination thereof.

[0067] The electrostatic chuck may be configured to secure a substrate to the side of the electrostatic chuck by the application of an electrostatic force. The electrostatic force may be sufficient to secure the substrate to the surface of the electrostatic chuck. That is, in some embodiments, the substrate may be secured to the electrostatic chuck without the application of any mechanical force, such as a mechanical clamp, for example. In some embodiments, the substrate may be secured by applying a mechanical force (e.g., via a mechanical clamp). The substrate secured to the electrostatic chuck is not particularly limited and may include, for example, a wafer, a workpiece, or any combination thereof. In some embodiments, the substrate includes a semiconductor wafer. In some embodiments, the substrate includes a silicon wafer. It will be understood that other substrates may be used herein without departing from the scope of this disclosure.

[0068] In some embodiments, the electrostatic chuck includes an insulator. The insulator may include a ceramic component. In some embodiments, the insulator may include a ceramic matrix. In some embodiments, the insulator may be formed from a ceramic material. The ceramic material may include at least one of alumina, zirconia, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof.

[0069] In some embodiments, the electrostatic chuck includes at least one conductive element. The at least one conductive element may include a metallic component. In some embodiments, the metallic component may be formed from a metallic material. The metallic material may include at least one of aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, molybdenum disilide, or any combination thereof. In some embodiments, the metallic component may include 17-4PH stainless steel, 316L stainless steel, other alloys, or any combination thereof.

[0070] At least one conductive element may include a heating element, an electrode, a temperature measuring probe, a charge dissipation component (e.g., a grounding component), or any combination thereof. The heating element is configured to supply thermal energy to the insulator. In some embodiments, at least one conductive element may comprise a plurality of heating elements having separate conductive paths extending through the insulator from a second side of the insulator to different regions of the insulator in order to supply local thermal energy to the insulator and its top surface. In some embodiments, the plurality of heating elements are arranged within a monolithic structure to control the temperature of the electrostatic chuck. In some embodiments, for example, the electrostatic chuck may comprise a monolithic structure having a first side, a second side, and at least one sidewall, and one or more thermally conductive regions embedded within the monolithic structure. In some embodiments, one or more thermally conductive regions are located between the first and second sides of the electrostatic chuck. In some embodiments, at least one of the one or more thermally conductive regions extends circumferentially along and / or adjacent to the sidewall of the electrostatic chuck. In some embodiments, at least one heating element is a plurality of heating elements, and at least two of the plurality of heating elements have at least one of different cross-sectional areas, different cross-sectional shapes, different positions, or any combination thereof within the insulator (e.g., relative positions between a first side and a second side). In some embodiments, at least one of the cross-sectional area, cross-sectional shape, position, or any combination thereof within the insulator is modified to optimize the temperature profile on the surface of the electrostatic chuck.

[0071] The electrodes are configured to generate an electrostatic field in response to an electric charge. The electrodes extend from the bottom surface of the insulator toward the top surface of the insulator so as to extend substantially along a plane adjacent to the top surface of the insulator and toward the plane below the top surface of the insulator. In some embodiments, the electrodes may comprise a plurality of electrodes, each having a separate conductive path extending through the insulator from the bottom surface toward the first side surface of the insulator, such that the plurality of electrodes substantially extend along a plane adjacent to a first side surface within the insulator. In some embodiments, a plurality of electrodes (e.g., one or more electrodes) are arranged within a monolithic structure to provide an electrostatic force for securing a substrate on an electrostatic chuck. In some embodiments, for example, the electrostatic chuck may comprise one or more electrodes arranged adjacent to a plurality of embossings beneath the top surface of the electrostatic chuck.

[0072] The temperature measuring probe measures the temperature of the monolithic structure. In some embodiments, the temperature measuring probe includes a thermocouple, a resistance temperature detector, or any combination thereof. In some embodiments, at least one conductive element may include multiple temperature measuring probes having separate conductive paths extending through the insulator from the bottom surface to the top surface. In some embodiments, the monolithic structure may further include at least one terminal communicating with at least one conductive element. In some embodiments, the monolithic structure may further include at least one terminal communicating with multiple heating elements, multiple electrodes, multiple temperature measuring probes, or any combination thereof.

[0073] An electrostatic chuck may not include a bonding component between the insulator and at least one conductive element. In some embodiments, the electrostatic chuck does not include a bonding component between the insulator and the heating element. In some embodiments, the electrostatic chuck does not include a bonding component between the insulator and the electrode. In some embodiments, the electrostatic chuck does not include a bonding component between the insulator and the temperature measuring probe. In some embodiments, the electrostatic chuck does not include a bonding component between the heating element, the electrode, and the temperature measuring probe.

[0074] Figure 1 is a flowchart of a method for forming an electrostatic chuck according to some embodiments of the present disclosure. As shown in Figure 1, the method 100 for forming an electrostatic chuck having an additively fabricated monolithic structure may include one or more of the following steps: a step 102 of depositing a ceramic material to form an insulator, and a step 104 of depositing a metallic material to form at least one conductive element located within the insulator, extending from a second side to a first side of the insulator. In some embodiments, the deposition of the ceramic material and the deposition of the metallic material are performed simultaneously (e.g., co-printing). In some embodiments, the placement of the ceramic material and the placement of the metallic material are performed sequentially. In some embodiments, the ceramic material and the metallic material are co-printed such that the metallic material is placed or embedded within the ceramic material.

[0075] In step 102, method 100 may include depositing a ceramic material to form an insulator. In step 104, method 100 may include depositing a metallic material to form at least one conductive element located within the insulator. The at least one conductive element extends from a second side of the insulator toward a first side of the insulator, while being located within the internal region of the insulator, such that the at least one conductive element does not protrude from at least one sidewall and top surface of the insulator. In some embodiments, the ceramic material and the metallic material are co-printed layer by layer to form a laminated monolithic structure comprising the insulator and at least one conductive element within the insulator.

[0076] In some embodiments, the ceramic material and the metallic material are co-printed during a single coating process such that each layer may contain the ceramic material, the metallic material, or both. In some embodiments, at least one conductive element may comprise a heating element, an electrode, a temperature measuring probe, or any combination thereof. In some embodiments, the electrostatic chuck is formed such that the monolithic structure does not include any bonding components between the insulator and at least one conductive element. In some embodiments, the electrostatic chuck may include one or more heating elements configured to operate at 500°C or higher during the semiconductor manufacturing process. In some embodiments, the electrostatic chuck operates at room temperature, or at temperatures of 20°C to 1200°C, 100°C to 1200°C, 200°C to 1200°C, 300°C to 1200°C, 400°C to 1200°C, 500°C to 1200°C, 600°C to 1200°C, 700°C to 1200°C, 800°C to 1200°C, 900°C to 1200°C, 1000°C to 1200°C, and 1100°C to 1 It may include one or more heating elements configured to operate at temperatures within the range of 200°C, 20°C to 1100°C, 20°C to 1000°C, 20°C to 900°C, 20°C to 800°C, 20°C to 700°C, 20°C to 600°C, 20°C to 500°C, 20°C to 400°C, 20°C to 300°C, 20°C to 200°C, 20°C to 100°C, or 20°C to 50°C. Therefore, the monolithic structure of the electrostatic chuck is formed from ceramic and metallic materials and does not include any bonding components between the ceramic and metallic materials to enable the electrostatic chuck to operate at temperatures above 500°C during semiconductor manufacturing processes without compromising the structural integrity of the electrostatic chuck.

[0077] Additive manufacturing may include 3D printing. In some embodiments, an electrostatic chuck may comprise a 3D electrostatic chuck formed by dispensing one or more 3D printable materials from a 3D printer to form a 3D electrostatic chuck. In some embodiments, 3D printing may include creating a solid object from a 3D model by building the object step by step. In some embodiments, for example, 3D printing may include coating 3D printable material in layers that are selectively joined or fused together to create a 3D electrostatic chuck having at least one of a monolithic structure, a one-piece structure, a structure that cannot be constructed by machining, or any combination thereof. 3D printing may include fusion coating using at least one of selective laser melting (SLM), selective laser sintering (SLS), fused deposition modeling (FDM), electron beam melting (EBM), direct metal laser sintering (DMLS), multi-material jetting, or any combination thereof.

[0078] Additive manufacturing may include a multi-material injection process. In some embodiments, the multi-material injection process may include selective droplet deposition of one or more materials. In some embodiments, the materials may include precursor materials. In some embodiments, additive manufacturing may include solidification by cooling of the deposited materials during additive manufacturing. In some embodiments, the multi-material injection process may include selective droplet deposition of electrostatic chuck-filled thermoplastic feed material containing precursor materials. In some embodiments, the multi-material injection process may include selective coating of one or more precursor materials applied by a print head capable of selectively depositing one or more precursor materials during the additive manufacturing process. In some embodiments, for example, the print head may be capable of depositing up to four materials, such as three precursor materials and a support material.

[0079] The droplet volume may be between 0.5 nl and 45 nl, or any range or partial range between 0.5 nl and 45 nl. For example, in some embodiments, the droplet volume of the precursor material may be 0.5nl to 45nl, 1nl to 45nl, 5nl to 45nl, 10nl to 45nl, 15nl to 45nl, 20nl to 45nl, 25nl to 45nl, 30nl to 45nl, 35nl to 45nl, 0.5nl to 30nl, 1nl to 30nl, 5nl to 30nl, 15nl to 30nl, 20nl to 30nl, 25nl to 30nl, 0.5nl to 20nl, 1nl to 20nl, 5nl to 20nl, 10nl to 20nl, or 15nl to 20nl.

[0080] The droplet diameter may be 200 μm to 1000 μm, or any range or partial range within 200 μm to 1000 μm. For example, in some embodiments, the droplet diameter of the precursor material is 200μm~1000μm, 200μm~900μm, 200μm~800μm, 200μm~700μm, 200μm~600μm, 200μm~500μm, 200μm~400μm, 200μm~300μm, 300μm~1000μm, 300μm~900μm, 300μm~800μm, 300μm~700μm, 300μm~600μm, 300μm~500μm, 300μm~400μm, 400μm~1000μm, 400μm~900μm, 40 The following ranges are available: 0μm~800μm, 400μm~700μm, 400μm~600μm, 400μm~500μm, 500μm~1000μm, 500μm~900μm, 500μm~800μm, 500μm~700μm, 500μm~600μm, 600μm~1000μm, 600μm~900μm, 600μm~800μm, 600μm~700μm, 700μm~1000μm, 700μm~900μm, 700μm~800μm, 800μm~1000μm, 800μm~900μm, and 900μm~1000μm. In some embodiments, the diameter may be less than 1000 μm.

[0081] The layer height of the precursor material may be 70 μm to 300 μm, or any range or partial range of 70 μm to 300 μm. In some embodiments, the layer height of each layer of the electrostatic chuck 302 may be based on the layer height of the precursor material. For example, in some embodiments, the layer height of the precursor material may be 70 μm to 300 μm, 100 μm to 300 μm, 150 μm to 300 μm, 200 μm to 300 μm, 250 μm to 300 μm, 70 μm to 250 μm, 100 μm to 250 μm, 150 μm to 250 μm, 200 μm to 250 μm, 70 μm to 200 μm, 100 μm to 200 μm, 150 μm to 200 μm, 70 μm to 150 μm, or 100 μm to 150 μm.

[0082] The electrostatic chuck may be formed from a precursor material. In some embodiments, additive manufacturing may involve the deposition of filament feed material. In some embodiments, the filament feed material may include a precursor material. In some embodiments, the precursor material may include raw materials, such as granular raw materials. For example, in some embodiments, the precursor material may include at least one of metal powder, metal alloy powder, ceramic powder, polymer (e.g., photopolymer resin, thermoplastic polymer, or any combination thereof), or any combination thereof. In some embodiments, the precursor material may include a material that can be fused by heat (e.g., a scanning laser or scanning electron beam) such that the resulting monolithic structure consists essentially of ceramic and metallic materials and does not contain any bonding material. In some embodiments, the precursor material may include, consist of, essentially consist of, or be selected from the group comprising ceramic materials, metallic materials, polymer materials, or any combination thereof.

[0083] The precursor material may include, consist of, or be essentially composed of a ceramic material. In some embodiments, for example, the insulator may include, consist of, or be essentially composed of a ceramic material. In some embodiments, the ceramic material may include, consist of, or be essentially composed of alumina, zirconia, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or at least one of any combination thereof, or be essentially composed of, or be selected from the group consisting of, these materials. In some embodiments, the insulator may include a conductive ceramic material, a non-conductive ceramic material, or any combination thereof. In some embodiments, the insulator is about 10 11 It has an electrical resistivity of ohms or more. In some embodiments, for example, the insulator may include silicon nitride-molybdenum disilide, and 1,6 × 10 -2 It may include an electrical resistivity of ohms and centimeters. In another example, the insulator may include silicon nitride-molybdenum disilide, with a resistivity of 2,4 × 10⁻⁶. -2 It may have an electrical resistivity of ohms per centimeter. In some embodiments, the ceramic material may contain up to 50 volume percent solids.

[0084] The precursor material may include, consist of, or be essentially a metallic material. In some embodiments, for example, a plurality of insulating regions may include, consist of, or be essentially a metallic material. In some embodiments, the metallic material may include, consist of, or be essentially a metallic material at least one of one or more metals, one or more metallic compounds, one or more metal oxides, one or more metallic alloys, or any combination thereof. In some embodiments, the metallic material may include, consist of, or be essentially a metallic material at least one of aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, or any combination thereof, or may be selected from the group consisting of these. In some embodiments, for example, the metallic material may include 316L stainless steel and contain 55 volume percent solids.

[0085] In some embodiments, the precursor material may include, consist of, or be essentially a polymer material. In some embodiments, the polymer material may include, consist of, or be essentially a wax, polycaprolactone, thermoplastic, photopolymer, or any combination thereof, selected from the group consisting of these. In some embodiments, the precursor material may further include one or more solvents.

[0086] The electrostatic chuck may comprise an additively manufactured 3D electrostatic chuck. In some embodiments, the electrostatic chuck may comprise an additively manufactured 3D body. In some embodiments, the electrostatic chuck may have a monolithic structure. In some embodiments, the monolithic structure may not include any bonding components between the insulator and at least one conductive element. In some embodiments, the monolithic structure may not be constructible by glass bonding. In some embodiments, the monolithic structure may not be constructible by forming a body from one or more materials (e.g., powder material) using a mold and bonding one or more materials using fusion coating such as glass bonding and / or sintering. In some embodiments, the monolithic structure may be a one-piece structure. In some embodiments, the electrostatic chuck may be a one-piece structure. In some embodiments, the monolithic structure may not be constructible by machining a raw workpiece to form an insulator. In some embodiments, the term “one-piece construction” may refer to a structure that does not include two or more structures that are joined together after fabrication. For example, in some embodiments, the electrostatic chuck may not include structures that are manufactured separately and then joined together. In some embodiments, the monolithic structure built as a single unit may be at least one of the following: a structure without seams, a structure without brazed joints, a structure without welded joints, or any combination thereof.

[0087] An electrostatic chuck may have at least one feature. The at least one feature may include, consist of, essentially consist of, or be selected from the group consisting of, a conduit, a channel, a plenum, a trench, a fitting, a connector, a sealing ring, a chamber, a thermal shield, a structure defining a hole, a structure defining a gap, a structure defining a channel, a structure defining a cavity (e.g., a partially enclosed area defining a cavity), a plane, a non-planar, a plurality of embossings, at least one conductive element, or any combination thereof. In some embodiments, the at least one conductive element comprises an electrode, a heating element, a temperature measuring probe, or any combination thereof. In some embodiments, the at least one feature may be embedded in a monolithic structure. In some embodiments, for example, a fitting may be a metal fitting embedded in the side of an insulator and connected to one or more separate conductive paths of the at least one conductive element. In some embodiments, the at least one feature may be defined by an insulator. In some embodiments, for example, the electrostatic chuck may include at least one conduit extending circumferentially through the interior of adjacent insulators around an insulator in order to provide uniform thermal, electrical, and physical performance of the electrostatic chuck.

[0088] Although not shown, in some embodiments the method further includes one or more steps of the following steps: forming a structured pattern on the upper surface of an insulator, for example, a first side surface; and applying a coating to the upper surface of the insulator, the steps of which may be performed optionally. In some embodiments the structured pattern comprises an embossed surface. In other embodiments the structured pattern comprises a plurality of embossings. In some embodiments forming an embossed surface further includes polishing the plurality of embossings on the surface of the electrostatic chuck. In some embodiments forming a structured pattern further includes planarizing the upper surface of the electrostatic chuck. In some embodiments the coating comprises at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear-resistant layer, or any combination thereof. In some embodiments applying a coating further includes polishing the coating on the first side surface of the insulator. In some embodiments the coating is polished to provide at least one of improved flatness, improved surface finish, improved density, improved precision of the thickness of the insulating layer between at least one conductive element and the first side surface, or any combination thereof. In some embodiments, for example, the coating may be a dielectric layer applied to the embossed surface of the electrostatic chuck. In another example, the coating may be a diffusion barrier layer applied to the embossed surface of the electrostatic chuck.

[0089] Figure 2 is a perspective view of some non-limiting embodiments of device 200. As shown in Figure 2, device 200 comprises a monolithic structure 202 including an insulator 204 and at least one conductive element 206 located within the insulator 204. The monolithic structure 202 is a one-piece, additively fabricated monolithic structure 202. In some embodiments, the monolithic structure 202 does not include any bonding components. In other embodiments, the monolithic structure 202 does not include any bonding components between the insulator 204 and at least one conductive element 206.

[0090] The insulator 204 includes a first side surface 210 and a second side surface 212 opposite to the first side surface 210. In some embodiments, the first side surface 210 may be called the top surface, and the second side surface 212 may be called the bottom surface. In some embodiments, at least one conductive element 206 may comprise an electrode, a heating element, a temperature measuring probe, or any combination thereof. In some embodiments, at least one conductive element 206 may comprise a plurality of conductive elements extending from the second side surface 212 toward the first side surface 210 of the insulator 204, such that each conductive element includes a separate conductive path extending through the insulator 204 to achieve desired performance characteristics of the device 200. In some embodiments, at least one conductive element 206 may further comprise a dummy structure to provide more uniform thermal, electrical, or physical performance of the device 200.

[0091] The monolithic structure 202 may have at least one terminal 208. The at least one terminal 208 allows for at least one of the following: current (e.g., AC, DC, non-AC, non-DC, or any combination thereof), potential (e.g., AC, DC, non-AC, non-DC, or any combination thereof), earth connection, or any combination thereof applied to at least one conductive element 206.

[0092] In some embodiments, the monolithic structure 202 may include at least one first terminal 208a communicating with a heating element 214. In other embodiments, at least one first terminal 208a may communicate with a plurality of heating elements 214. In some embodiments, the monolithic structure 202 may include at least one second terminal 208b communicating with an electrode 216. In other embodiments, at least one second terminal 208b may communicate with a plurality of electrodes 216. In other embodiments, the monolithic structure 202 may include at least one third terminal 208c communicating with a temperature measuring probe 220. In other embodiments, at least one third terminal 208c may communicate with a plurality of temperature measuring probes 220. In some embodiments, for example, the first terminal may communicate with one or more heating elements, the second terminal may communicate with one or more electrodes in an insulator, the current may be applied to the first terminal 208a to heat the electrostatic chuck, and the current may be applied to the second terminal 208b to provide an electrostatic force to fix the wafer to the side of the electrostatic chuck.

[0093] In some embodiments, at least one conductive element 206 may include a heating element 214. The heating element 214 extends from a second side 212 throughout the interior of the insulator 204, based on the desired thermal properties of the device 200. The heating element 214 is configured to generate thermal energy, e.g., heat, within the monolithic structure 202 in response to a current induced through the heating element 214. In some embodiments, the heating element 214 comprises a plurality of heating elements 214, each having a separate conductive path that penetrates the insulator 204 from a second side 212 of the insulator to different internal regions of the insulator 204, thereby supplying local thermal energy to the insulator. In some embodiments, the plurality of heating elements 214 are located below the electrodes 216 within the insulator 204. In some embodiments, the plurality of heating elements 214 are arranged horizontally and / or vertically within the insulator 204 to obtain desired thermal uniformity on the first side 210 of the insulator 204. In some embodiments, the heating element 214 is located below the planar layer of the electrode 216, which is situated within the insulator 204. In other words, in some embodiments, within the insulator 204, the heating element 214 extends through the insulator 204 between the second side surface 212 and the planar layer of the electrode 216. Thus, the region of the insulator 204 containing the heating element 214 may be referred to as the heat conduction region of the insulator 204.

[0094] In some embodiments, the insulator 204 includes a side wall 218. In some embodiments, at least one of the multiple heating elements 214 is further located adjacent to the side wall 218 within the insulator 204. In some embodiments, at least one of the multiple heating elements 214 may extend circumferentially adjacent to the side wall 218 within the insulator 204. In some embodiments, the heating elements 214 may be configured to generate at least 500°C. Furthermore, the insulator 204 is formed around the heating elements 214 to allow the insulator 204 to distribute the aforementioned heat generated by the heating elements 214 to the entire insulator 204 and the first side surface 210. Thus, the insulator 204 and at least one conductive element 206 can operate at temperatures of at least 500°C. In some embodiments, the insulator 204 and at least one conductive element 206 may be configured to operate at temperatures up to 500°C. In some embodiments, the insulator 204 and at least one conductive element 206 may be configured to operate at temperatures above 500°C. In some embodiments, the insulator 204 and at least one conductive element 206 may be configured to operate at temperatures of 550°C or less. In some embodiments, the insulator 204 and at least one conductive element 206 may be configured to operate at temperatures of 1200°C or less.

[0095] In some embodiments, at least one conductive element 206 may comprise an electrode 216. The electrode 216 is configured to generate an electrostatic field in response to a charge. The electrode 216 extends from a second side of the insulator toward a first side of the insulator such that at least one electrode substantially extends along a plane adjacent to a first side of the insulator. Thus, the planar region of the insulator 204 comprising the electrode 216 may be called the conductive region of the insulator 204. In some embodiments, the electrode 216 comprises a plurality of electrodes 216. In some embodiments, the plurality of electrodes 216 comprises separate conductive paths extending through the insulator 204 from a second side 212 toward a first side 210 of the insulator such that the plurality of electrodes 216 substantially extend along a plane adjacent to a first side 210 of the insulator 204.

[0096] In some embodiments, at least one conductive element 206 comprises a temperature measuring probe 220. In some embodiments, the temperature measuring probe 220 comprises at least one of a thermocouple, a resistance temperature detector, another temperature sensing device, or any combination thereof. In some embodiments, at least one conductive element 206 comprises a plurality of temperature measuring probes 220. In some embodiments, each of the plurality of temperature measuring probes 220 comprises a separate conductive path that penetrates the insulator 204 from a second side 212 toward a first side 210.

[0097] The monolithic structure 202 can operate at high temperatures. In some embodiments, the monolithic structure 202 can withstand temperatures exceeding 500°C. For example, in some embodiments, the environment of the monolithic structure 202 may be maintained at such high temperatures during the manufacturing of semiconductor wafers.

[0098] The monolithic structure 202 does not include any bonding components. In some embodiments, the monolithic structure 202 does not include any bonding components between the insulator 204 and at least one conductive element 206. In some embodiments, the bonding components include a process or material applied to bond the first structure to the second structure after the manufacture of at least one of the first or second structure. For example, the monolithic structure 202 does not have to include an insulating layer and an electrode layer that are bonded together after the formation of at least one of the insulating layer and electrode layer.

[0099] In this regard, in some embodiments, the monolithic structure 202 may be formed by an additive manufacturing process such that, after the monolithic structure 202 has sufficiently cured, the resulting monolithic structure 202 does not have any bonding components. The monolithic structure 202 does not have any bonding components placed within it, because bonding components may degrade or weaken over time in response to high temperatures, potentially substantially affecting the integrity of the monolithic structure 202. In some embodiments, the bonding components may include, consist of, essentially consist of, or be selected from among adhesives, solders, filler metals, polymers (e.g., thermoplastic resins), glass bonding materials, or any combination thereof. In some embodiments, for example, the adhesive includes epoxy.

[0100] In some embodiments, the monolithic structure 202 may further comprise at least one conduit 222. In some embodiments, the at least one conduit 222 is defined by at least one of the insulator 204, at least one conductive element 206, or any combination thereof. In some embodiments, the at least one conduit 222 extends adjacent to the periphery of the insulator 204 and penetrates the insulator 204. In some embodiments, the at least one conduit 222 comprises one or more lift pin holes defined by the insulator 204. The lift pin holes allow the passage of elongated members through the lift pin holes to remove a substrate located on the first side surface 210 of the insulator 204. In some embodiments, the at least one conduit 222 comprises a backside gas delivery hole defined by the insulator 204. The backside gas delivery hole allows a gas, such as a heat transfer gas, to pass through the insulator 204 to the underside of a substrate located on the first side surface 210 of the device 200. In some embodiments, at least one conduit 222 comprises a dummy structure defined by an insulator 204, the dummy structure configured to provide uniform thermal, electrical, and physical performance of the electrostatic chuck. In some embodiments, at least one conduit 222 comprises at least one of mounting fixtures, bolt holes, flanges, connectors, alignment mechanisms, optical paths, or any combination thereof.

[0101] In some embodiments, the monolithic structure 202 may further comprise one or more gas channels 224 defined by the insulator 204. In some embodiments, one or more gas channels 224 allow gas to be guided through the channel between the substrate and the outer surface of the insulator 204 on the first side 210. In some embodiments, at least one conduit 222 may comprise one or more gas channels 224 located on the first side 210 of the insulator 204. In some embodiments, a structured pattern on the first side 210 of the insulator 204 may comprise one or more gas channels 224. In some embodiments, the insulator 204 may comprise at least one gas channel 224 on the first side 210.

[0102] Figure 3 is a cross-sectional side view of one non-limiting embodiment of device 300 according to several embodiments. As shown in Figure 3, device 300 comprises an electrostatic chuck 302 having a monolithic structure 304 comprising an insulator 306 and at least one conductive element 308 located within the insulator 306. In some embodiments, the insulator 306 includes a ceramic component. In some embodiments, the ceramic component includes a ceramic material formed by additive manufacturing. In some embodiments, the at least one conductive element 308 includes a metal component. In some embodiments, the metal component includes a metal material formed by additive manufacturing. In some embodiments, the ceramic material and the metal material are selectively coated in each layer of a multilayer additive manufacturing process to form a monolithic structure. In other embodiments, the ceramic material and the metal material are co-printed layer by layer by an additive manufacturing process to form a monolithic structure 304 having an insulator 306 and at least one conductive element 308. As a result of co-printing by an additive manufacturing process, the monolithic structure does not include a bonding component between the insulator 306 and the at least one conductive element 308.

[0103] At least one conductive element 308 may form a thermally conductive region comprising at least one heating element 322, a conductive region comprising at least one electrode 324, or any combination thereof. In some embodiments, the thermally conductive region may be located within an insulator 306 to maximize thermal uniformity on the upper surface of the electrostatic chuck 302 and deliver it to the wafer. In some embodiments, the thermally conductive region may be located within the insulator 306 during additive manufacturing based on predetermined thermal properties of the electrostatic chuck 302 and the wafer. In some embodiments, the thermally conductive region may comprise at least one heating element 322 embedded in the insulator 306. In some embodiments, traces of the heating element embedded in the insulator 306 may be located during additive manufacturing to optimize the thermal uniformity of the electrostatic chuck 302. In some embodiments, the thermally conductive region may comprise a sidewall heater 320. In some embodiments, the sidewall heater 320 may provide improved thermal uniformity at the edges of the electrostatic chuck 302.

[0104] The monolithic structure 304 may have a top surface and a bottom surface opposite to the top surface. The electrostatic chuck 302 may have at least one terminal 310. In some embodiments, the monolithic structure 304 may include at least one terminal 310 formed from a metallic material during the additive manufacturing process, and at least one terminal 310 is connected to a corresponding one of at least one conductive element 308. The at least one terminal 310 may be located within the insulator 306 such that the at least one terminal 310 is accessible from the bottom surface of the insulator 306. In some embodiments, the at least one terminal 310 may be located below the surface of the bottom surface of the electrostatic chuck 302, and an electrical plug connector may be arranged in electrical communication with the at least one terminal 310 to deliver current to the corresponding at least one conductive element 308. In this regard, in some embodiments, at least one terminal 310 may include an electrode pin 312 extending from at least one terminal 310 through the bottom surface of the insulator 306. In some embodiments, at least one terminal 310 may communicate with a thermally conductive region and at least one heating element 322. In some embodiments, at least one terminal 310 may communicate with a conductive region and at least one electrode 324. In some embodiments, at least one terminal 310 includes a first terminal communicating with a thermally conductive region and a second terminal communicating with a conductive region.

[0105] The electrostatic chuck 302 does not necessarily include a bonding component between the insulator 306 and at least one conductive element 308. In some embodiments, the bonding component may include, consist of, essentially consist of, or be selected from among adhesives, filler metals, bonding materials, glass bonding, sintered materials, or any combination thereof. The electrostatic chuck 302 may be able to operate at temperatures above 500°C while maintaining thermal uniformity at the electrostatic chuck 302 and wafer levels. The electrostatic chuck 302 may also be able to supply appropriate heater power to the edges of the electrostatic chuck 302. Thus, the electrostatic chuck 302 overcomes temperature non-uniformity around features such as lift pin holes and backside gas holes that arise due to limitations in heater placement and the problem of metallic impurities diffusing from the heater material to the wafer contact surface.

[0106] The electrostatic chuck 302 may include a coefficient of thermal expansion (CTE) between the insulator 306 and at least one conductive element 308 within 5-70%, or any range or partial range of 5-70%. For example, in some embodiments, the CTE between the insulator 306 and at least one conductive element may be within the range of 5-60%, 5-50%, 5-40%, 5-30%, 5-20%, 5-10%, 10-70%, 10-60%, 10-50%, 10-40%, 10-30%, 10-20%, 20-70%, 20-60%, 20-50%, 20-40%, 20-30%, 30-70%, 30-60%, 30-50%, 30-40%, 40-70%, 40-60%, or 40-50%. In some embodiments, the electrostatic chuck 302 may have a coefficient of thermal expansion (CTE) of no more than 50% between the insulator 306 and at least one conductive element 308. The ceramic material of the insulator 306 and the metallic material of the conductive element 308 may be selected based on the CTE of the materials due to potential thermal stress damage resulting from CTE mismatch. In some embodiments, the materials selected to form the electrostatic chuck 302 may be based on CTE mismatch at high temperatures. In some embodiments, the materials selected to form the electrostatic chuck 302 may be based on their electrical performance at high temperatures. In some embodiments, high temperatures may include temperatures of 500°C or higher.

[0107] The electrostatic chuck 302 may include a structured pattern on the upper surface of the insulator 306. The structured pattern may comprise an embossed surface. In some embodiments, the structured pattern may comprise a plurality of embossments 314 formed on the upper surface. The plurality of embossments 314 may comprise a plurality of protrusions distributed across the upper surface configured to contact the surface of the wafer. The plurality of embossments 314 reduce the surface area in contact with the wafer while allowing the wafer to be fixed to the plurality of embossments 314 in response to electrostatic force. In some embodiments, the upper surface of the monolithic structure 304 may comprise a substantially flat surface comprising a plurality of channels defined by the plurality of embossments 314 formed on the upper surface, configured to contact the surface of a substrate (e.g., a wafer). Furthermore, in some embodiments, the plurality of channels may allow a gas, liquid, or both to be guided through the plurality of channels between the plurality of embossments 314 when the wafer is positioned on the upper surface. For example, a hot gas may be delivered through the plurality of channels to improve heat transfer between the electrostatic chuck 302 and the wafer.

[0108] In some embodiments, a planarization process may be applied to the top surface to form a plurality of embossings 314, providing a substantially flat surface for contacting the wafer surface. Planarization involves removing surface topology by planarizing and smoothing the surface. In some embodiments, the plurality of embossings 314 may be formed by planarizing the insulator 306. In some embodiments, the plurality of embossings 314 may be formed by polishing the top surface to provide a substantially flat surface formed from the embossings. In some embodiments, planarization removes a first layer from the plurality of embossings 314, and polishing removes a second layer from the plurality of embossings 314, further planarizing and smoothing the plane formed from the embossings to allow the electrostatic chuck 302 to contact the wafer without damaging it.

[0109] In some embodiments, the device 300 includes a coating applied to at least the upper surface of the electrostatic chuck 302 and the monolithic structure 304. In this regard, a coating may be applied to the upper surface of the insulator 306. In some embodiments, a plurality of embossings 314 are formed by the coating applied to the upper surface of the insulator 306. In other embodiments, the coating is polished to provide at least one of improved flatness, improved surface finish, improved density, improved precision of the thickness of the insulating layer between at least one conductive element and the first side surface, or any combination thereof. In some embodiments, the coating includes at least one of a dielectric layer, a metal diffusion barrier layer, an dielectric breakdown prevention layer, a mechanical wear-resistant layer, or any combination thereof.

[0110] The electrostatic chuck 302 may further comprise a dielectric layer 316. When a conductive region is electrically biased to the substrate by a voltage, free static charges drift through the dielectric layer 316 in response to the electric field generated in the conductive region, and the attractive force of the dielectric layer 316 combines with the electrostatic force of the insulator 306 to provide a greater electrostatic force that fixes the substrate. In some embodiments, the dielectric layer 316 may comprise one or more materials coated onto the electrostatic chuck 302. In some embodiments, the dielectric layer 316 may be located on the surface of the electrostatic chuck 302 and the insulator 306. In some embodiments, the dielectric layer 316 may be located on a first side surface of the electrostatic chuck 302. In some embodiments, the dielectric layer 316 may be located adjacent to a conductive region on the first side surface of the electrostatic chuck 302. In some embodiments, the dielectric layer 316 may be located on the electrodes of the electrostatic chuck 302. In some embodiments, the dielectric layer 316 may be bonded to the monolithic structure 304 on the first side surface after manufacturing. In some embodiments, the dielectric layer 316 may be located on the upper surface of the multiple embossings 314.

[0111] The electrostatic chuck 302 may further include a diffusion barrier layer 318 disposed on the surface of the insulator 306. The diffusion barrier layer 318 may prevent metallic contaminants from reaching the substrate fixed to the electrostatic chuck 302. For example, the diffusion barrier layer 318 may prevent metallic contaminants from the dielectric layer 316 from reaching the substrate. In some embodiments, the diffusion barrier layer 318 may be located on a first side surface of the insulator 306. In some embodiments, the diffusion barrier layer 318 may be located between the insulator 306 and the dielectric layer 316. In some embodiments, the dielectric layer 316 may be located between the diffusion barrier layer 318 and the insulator 306. Therefore, in some embodiments, the diffusion barrier layer 318 may be applied on the dielectric layer 316. In some embodiments, for example, the diffusion barrier layer 318 may include amorphous alumina deposited by atomic layer deposition.

[0112] The configuration of the insulator 306, the conductive element 308, at least one terminal 310, the plurality of embossings 314, the dielectric layer 316, and / or other components of the electrostatic chuck 302 is not intended to be limiting, and it should be understood by those skilled in the art that the electrostatic chuck 302 may have other components and / or other configurations or arrangements without departing from the scope of this disclosure.

[0113] Figures 4 to 7 are schematic diagrams of non-limiting embodiments of an electrostatic chuck, according to several embodiments.

[0114] Figure 4 is an exploded view of an electrostatic chuck 400 having multiple layers (e.g., layers 404, 408, 412, 414, and 416). All or some of the layers may be formed using an additive manufacturing process. In some cases, the layers may be formed in a single additive manufacturing process (i.e., a single print). Layers formed by an additive manufacturing process have a monolithic structure with an integral structure that does not include bonding components.

[0115] In some embodiments, as shown, the top layer 404 includes an insulating material. In some embodiments, a second layer 408 includes a conductive material so that it is a conductive layer. In some embodiments, the conductive layer 408 is configured to be at least one electrode and is incorporated into (e.g., embedded in) or on the surface of a layer 412 that includes an insulating material. In some embodiments, the insulating material used to form layer 412 is the same as the insulating material used to form the top layer 404. In some embodiments, the insulating material used to form layer 412 is different from the insulating material used to form layer 404.

[0116] In some embodiments, layer 414 is a conductive layer containing a conductive material. In some embodiments, the conductive layer 414 is incorporated inside the insulating layer 412. In some embodiments, the conductive layer 414 is embedded toward the bottom of the yellow layer. In some embodiments, the conductive layer 414 is configured to be at least one heater. In some embodiments, layer 414 includes one or more color-shaped elements 422. In some embodiments, the color-shaped elements 422 penetrate and / or extend into the bottom layer 416 and are electrical contacts to the heater that facilitate connection with power cables from the back surface 424 of the electrostatic chuck 400 to the heater.

[0117] In some embodiments, the bottom layer 416 includes an insulating material which may be the same as and / or different from the insulating material of the other layers described above (e.g., layers 404 and / or 412). In some embodiments, the bottom layer 416 is configured to allow electrical connections to be incorporated into the component. In some embodiments, the bottom layer 416 is constructed via an additive manufacturing process (e.g., 3D printing) and has an open space or conduit, such as a blind hole, with conductive material on its inner wall surface. Such conduits in a monolithic structure cannot be achieved using conventional manufacturing methods and can only be achieved by an additive manufacturing process. In some embodiments, the conductive material lining the inner surface of the conduit is made thicker than required, so that the portion can later be machined to create threads for connections.

[0118] In some embodiments, the additively manufactured part is built from bottom to top (i.e., starting with the bottom layer 416). In some embodiments, this involves co-depositing or co-printing conductive and insulating materials so that color-shaped conductive features are created from substantially insulating material, as shown in layer 414 as an example. In some embodiments, as shown in Figure 4, a plurality of circular vertical voids 426 are formed within the conductive layer 414, eventually penetrating the chuck completely and serving as lift pin holes. In some embodiments, these holes 426 have no conductive material on their inner walls (of either layer). In some embodiments, once these features are printed on the bottom layer 416, the additive manufacturing incorporates layers of conductive and insulating material to create a heater. In some embodiments, there is a layer (insulating layer 412) that is substantially insulating material, except for through holes 426 without material, for the lift pin holes and conductive supports (not shown) configured to connect to electrode layers that are subsequently printed. In some embodiments, the conductive layer 408 is an electrode layer and contains substantially conductive material with some insulating material placed in between. As can be seen from the figure, the conductive layer 408 also includes lift pin holes 426, which are empty spaces or voids within layer 408. In some embodiments, as shown, there may be a precisely defined thin insulating layer (layer 404) which is a solid filled with a material other than the lift pin holes 426. In some embodiments, the thickness of the insulating layer 408 and the quality of the insulating material within layer 408 are optimized so that, in some embodiments, layer 408 functions as a dielectric layer. In some embodiments, the additive manufacturing process also prints embossing and sealing rings, as well as gas channel features on the upper surface of layer 408.

[0119] Figure 5 shows the heater layer 502 according to several embodiments. In some embodiments, the heater layer 502 includes insulating material 506 and conductive material 508, either embedded within the same layer or in the same horizontal plane as insulating material 506 and conductive material 508.

[0120] Figure 6 shows an electrode layer 602 comprising an insulating material 606 and a conductive material 608 according to several embodiments. The electrode layer 602 can be formed by an additive manufacturing process such as co-printing or co-deposition, such that the electrode layer 602 is formed as a monolithic structure having an integrated structure in which the insulating material 606 and the conductive material are in the same horizontal plane and the monolithic structure does not include any bonding components.

[0121] Figure 7 shows a side view of an electrostatic chuck 700, according to several embodiments, showing an electrode layer 708 connected to a bottom layer 716 having conductive supports 720. In some embodiments, two heater wires 722 are formed in the electrode layer 708. In some embodiments, a gas line connection 724 for backside gas is located at the center of the chuck 700. In some embodiments, the gas line connection 722 is an internal channel through an insulating layer (not shown) configured to connect to a hole 726 on the top surface of the chuck 700. In some embodiments, electrodes (not shown) are located near the top surface. In some embodiments, the electrodes are separated by a thin insulating layer.

[0122] While several exemplary embodiments of this disclosure have been described, those skilled in the art will readily understand that further embodiments can be created and used within the scope of the appended claims. Many of the advantages of this disclosure, as encompassed by this document, are described above. However, it will be understood that this disclosure is in many respects merely illustrative. Modifications can be made to details without exceeding the scope of this disclosure, particularly with respect to the shape, size, and arrangement of parts. Naturally, the scope of this disclosure is defined in the language expressing the appended claims.

Claims

1. It is an electrostatic chuck, A monolithic structure created by layering, Insulator and, The monolithic structure comprises at least one conductive element located within the insulator, An electrostatic chuck wherein the monolithic structure does not include a bonding component between the insulator and the at least one conductive element, and the electrostatic chuck can withstand temperatures of 500°C or higher.

2. The electrostatic chuck according to claim 1, wherein the at least one conductive element is a heater element, and the electrostatic chuck can maintain thermal uniformity across the surface of the wafer.

3. The electrostatic chuck according to claim 1, wherein the additively fabricated monolithic structure further comprises at least one conduit, the at least one conduit being defined by the insulator and containing no material.

4. The electrostatic chuck according to claim 3, wherein the at least one conduit is at least one of a gas channel, a liquid channel, a connection hole, a threaded hole, a through hole, a void, or any combination thereof.

5. The electrostatic chuck according to claim 3, wherein the at least one conduit is a heat shield structure within the insulator, and the heat shield structure has the same extent as the outer circumference of the insulator and is adjacent to the outer circumference of the insulator.

6. The electrostatic chuck according to claim 1, wherein the insulator comprises a ceramic material and the at least one conductive element comprises a metal material.

7. The electrostatic chuck according to claim 6, wherein the ceramic material and the metal material are co-printed layer by layer to form the additively fabricated monolithic structure, and the ceramic material and the metal material are co-printed such that they are in the same horizontal plane.

8. The aforementioned insulator, Alumina, zirconia, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium oxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof, The electrostatic chuck according to claim 1, wherein the at least one conductive element includes at least one of aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, molybdenum disilide, or any combination thereof.

9. The aforementioned insulator is about 10 １１ The electrostatic chuck according to claim 1, having a resistivity of ohms or more.

10. The at least one conductive element is The electrostatic chuck according to claim 1, comprising at least one electrode, the at least one electrode configured to generate an electrostatic field in response to an electric charge.

11. The electrostatic chuck according to claim 10, wherein the at least one electrode is located below the upper surface of the insulator.

12. The electrostatic chuck according to claim 1, wherein the at least one conductive element further comprises at least one heating element, and the at least one heating element is configured to supply thermal energy to the monolithic structure.

13. The electrostatic chuck according to claim 12, wherein the at least one heating element is located below the at least one electrode in the insulator.

14. The electrostatic chuck according to claim 12, wherein the at least one heating element is located adjacent to the side wall within the insulator.

15. Depositing ceramic material to form an insulator, This includes depositing a metallic material to form at least one conductive element located within the insulator, A method for defining a monolithic structure in which the ceramic material and the at least one conductive element have an integral structure that does not include a bonding component and can withstand temperatures of 500°C or higher.

16. The method according to claim 15, further comprising forming at least one conduit within the monolithic structure that does not contain any material.

17. The method according to claim 15, wherein the additive manufacturing process is used to deposit the ceramic material and deposit the metal material.

18. The method according to claim 17, wherein the ceramic material and the metal material are co-printed layer by layer so that the ceramic material and the metal material are in the same horizontal plane.

19. The method according to claim 15, further comprising applying a coating to the upper surface of the insulator.

20. The method according to claim 15, wherein the monolithic structure forms at least a portion of the electrostatic chuck.

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