In-line resistor integrated with conductive contact pad structure

Abstract

The integrated circuit structure includes (i) a first layer containing a first metal, (ii) a second layer containing a resistive material located above and in contact with the first layer, and (iii) a third layer containing a second metal located above and in contact with the second layer. In one example, the resistive material is different from one or both of the first and second metals. Connecting components are located above and in contact with the second layer. In one example, the interconnecting components are solder bumps or solder balls. In one example, the resistivity of the resistive material in the second layer is at least 20% or at least 50% greater than the resistivity of the first and third layers, respectively. In one example, the resistive material includes one or more of the following: (i) a third metal different from the first and second metals, (ii) a metalloid, and (iii) the third metal plus at least one of oxygen and nitrogen.

Description

【Technical Field】 【0001】 【0001】This disclosure generally relates to integrated circuits, and more particularly, to in-line resistor structures for integrated circuits. 【Background Art】 【0002】 【0002】There are various chip packaging technologies such as ball grid arrays (BGAs) and flip chips for mounting integrated circuit dies and package assemblies on a circuit board (such as a printed circuit board or PCB). For example, in a flip chip configuration, the die is coupled to a carrier substrate (or package) via a plurality of solder bumps. The resulting integrated circuit package can be coupled to the circuit board using, for example, solder balls in a BGA configuration. For example, the die can include a plurality of contact pads, and each contact pad of the die is coupled to a corresponding solder bump. Similarly, the carrier substrate can include a plurality of contact pads, and each contact pad of the carrier substrate is coupled to a corresponding solder bump or a corresponding solder ball. Further, the circuit board can include a plurality of contact pads, and each contact pad of the circuit board is coupled to a corresponding solder ball. Surface mount components such as resistors can be mounted on the PCB and electrically coupled to one or more of the contact pads. 【Brief Description of the Drawings】 【0003】 [Figure 1] 【0003】FIG. 1 illustrates a cross-sectional view of an integrated circuit structure including a device and a resistive contact pad structure thereon according to an embodiment of the present disclosure, wherein the resistive contact pad structure includes a layer having a relatively high resistivity (e.g., compared to the resistivity of one or more other layers of the resistive contact pad structure), wherein the resistive contact pad structure is configured to receive an interconnect component such as a conductive ball or a conductive bump, and wherein the interconnect component couples the device to another device. [Figure 2] 【0004】Figure 2 shows a cross-sectional view of an integrated circuit structure according to one embodiment of the present disclosure, which includes the resistive contact pad structure of Figure 1 and a non-resistive contact pad structure laterally adjacent to the resistive contact pad structure. [Figure 3] 【0005】 Figure 3 shows a cross-sectional view of the integrated circuit structure of Figure 2, which has two interconnection elements on a resistive contact pad structure and two interconnection elements on a non-resistive contact pad structure, according to one embodiment of the present disclosure. [Figure 4] 【0006】 Figure 4 shows a cross-sectional view of an integrated circuit structure comprising two laterally adjacent resistive contact pad structures according to one embodiment of the present disclosure, wherein the two resistive contact pad structures are coupled by a continuous, monolithic resistor layer common to both resistive contact pad structures. [Figure 5] 【0007】 Figure 5 illustrates a cross-sectional view of an integrated circuit structure according to one embodiment of the present disclosure, comprising two laterally adjacent resistive contact pad structures and another laterally adjacent non-resistive contact pad structure. [Figure 6] 【0008】 Figure 6 shows a cross-sectional view of an integrated circuit structure according to one embodiment of the present disclosure, comprising a device and a resistive contact pad structure on the device, wherein the resistive contact pad structure comprises a layer having a relatively high resistivity (for example, compared to the resistivity of one or more other layers of the resistive contact pad structure) and in contact with a conductive wire below. [Figure 7A] 【0009】 Figure 7A shows a cross-sectional view of an integrated circuit system according to one embodiment of the present disclosure, which uses any one or more of the resistive contact pad structures described with respect to Figures 1 to 6. [Figure 1B] 【0010】 Figure 7B shows a cross-sectional view of another integrated circuit system 750 that uses one or more of the resistive contact pad structures described in relation to Figures 1 to 6, according to one embodiment of the present disclosure. [Figure 8] 【0011】 Figure 8 illustrates a flowchart showing a method for forming the exemplary integrated circuit structures shown in Figures 1 to 6 according to one embodiment of the present disclosure. [Figure 9A] 【0012】 Figure 9A collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9B] Figure 9B collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9C] Figure 9C collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9D] Figure 9D collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9E] Figure 9E collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9F] Figure 9F collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9G] Figure 9G collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9H] Figure 9H collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure. [Figure 9I] Figure 9I collectively illustrates exemplary integrated circuit structures at various stages of processing according to the method of Figure 8, according to one embodiment of the present disclosure.

[0004] 【0013】 The drawings illustrate various embodiments of the present disclosure for illustrative purposes only and are not necessarily drawn to scale. Numerous variations, configurations, and other embodiments will become apparent from the following detailed description. [Modes for carrying out the invention]

[0005] 【0014】 This specification discloses a resistive contact pad structure that includes an inline resistor. For example, instead of forming a separate resistor coupled to the contact pad, the contact pad itself is formed to have a relatively high resistive layer. Such a resistive contact pad structure may be formed at the die level, package level, or circuit board level. For example, the resistive contact pad structure may be coupled to conductive bumps or balls, such as conductive solder bumps or conductive solder balls. The resistive layer of the resistive contact pad structure may be coupled, for example, between two conductive contact pads, or between a conductive contact pad and another conductive element (e.g., a conductive wire). Such a configuration may be used to help reduce the need for surface mount resistors.

[0006] 【0015】 In one embodiment, such a resistive contact pad structure includes a lower layer, an upper layer above the lower layer, and a resistor layer between the lower and upper layers. The lower layer may be elementally and / or dimensionally similar to any other laterally adjacent non-resistive contact pad structure. The resistor layer and the upper layer are added to the lower layer to form the resistive contact pad structure. In one example, the height and / or material of the resistor layer may be selected so that the resistor layer has a relatively high resistance. For example, the resistance of a resistive contact pad structure may be relatively higher than that of a laterally adjacent non-resistive contact pad structure having only a lower layer (but without a resistor layer and an upper layer). In a resistive contact pad structure, the upper layer can, for example, receive a corresponding solder ball or solder bump.

[0007] 【0016】 In one example, the resistor layer comprises a resistive material such as a metal or metalloid such as germanium or tellurium, which has a relatively high resistivity (for example, higher than copper or nickel). In another example, the resistive material of the resistor layer comprises metal oxides and / or metal nitrides such as tantalum oxide, titanium oxide, aluminum oxide, aluminum nitride, and / or other nitrides or oxides having a desired resistivity greater than that of a given conductive pad (or more pads). In yet another example, carbides, oxynitrides, oxycarbides, or oxycarbonitrides of one or more metals may also be used instead. The choice of material for the resistor layer may depend on the desired resistance of the resistive contact pad structure, whether it is an element, compound, alloy, metalloid, metal oxide, or other resistive conductor. Based on this disclosure, numerous variations and embodiments will become apparent.

[0008] General Overview 【0017】 Several significant issues remain regarding the design and formation of contact pads for integrated circuit structures. For example, the design of an integrated circuit may require connecting contact pads in series with surface-mount resistors. However, adding surface-mount resistors in series with contact pads can increase the area of ​​the circuit structure and / or increase costs.

[0009] 【0018】 Accordingly, techniques for forming a resistive contact pad structure including inline or integrated resistors are described herein, for example, that provide resistance within the resistive contact pad structure and thus reduce the need for external resistance such as surface mount resistors. For example, instead of forming a separate surface mount resistor coupled in series with the contact pad, the resistive contact pad structure itself is formed to have a relatively high resistance comparable to that of a surface mount resistor.

[0010] 【0019】In one embodiment, the resistive contact pad structure described herein can be coupled at any level of an integrated circuit system. For example, the resistive contact pad structure can be on an integrated circuit die for coupling a die to a package carrier substrate in a flip-chip configuration, e.g., via corresponding solder bumps. Similarly, the resistive contact pad structure can be on a package carrier substrate for coupling the package carrier substrate to a die or a PCB, e.g., via corresponding solder bumps. In another example, the resistive contact pad structure can be on a package carrier substrate for coupling the package carrier substrate to a circuit board such as a PCB, e.g., via corresponding solder balls. In yet another example, the resistive contact pad structure can be on a circuit board for coupling the circuit board to a package carrier substrate, e.g., via corresponding solder balls. Thus, in one example, the resistive contact pad structure can be coupled to an interconnect component such as a solder ball or a solder bump, and the resistive contact pad structure can be at the die level, package level, or substrate level. 【0011】 【0020】 In one example, a device (such as a die, a package carrier substrate, or a circuit board) includes a plurality of contact pad structures, and for example, based on the design of the device, only some of such contact pad structures are resistive contact pad structures. The remaining contact pads may be non-resistive contact pad structures having negligible resistance (high conductivity) or a resistance substantially lower than the intentionally high resistance of the resistive contact pad structure. 【0012】 【0021】 In one embodiment, the resistive contact pad structure includes a lower layer, an upper layer above the lower layer, and a resistor layer between the lower layer and the upper layer. The lower layer may be similar elementally, compositionally, and / or dimensionally to any other laterally adjacent non-resistive contact pad structure. For example, a non-resistive contact pad structure includes only the lower layer (without any resistor layer and upper layer thereon). Note that although there is no upper layer in the non-resistive contact pad structure, this layer is identified as the lower layer of the non-resistive contact pad structure for ease of identification nevertheless. 【0013】 【0022】 For example, the lower layers of the resistive contact pad structure and the non-resistive contact pad structure may be formed using the same process flow, may be elementally, compositionally, and / or dimensionally similar, and may have upper and lower surfaces on the same plane. In one example, the lower layers of the resistive contact pad structure and the non-resistive contact pad structure comprise nickel, copper, aluminum, gold, silver, platinum, and / or other metals / alloys suitable for conductive contact pads. 【0014】 【0023】 In one embodiment, the height and / or material of the resistor layer may be selected such that the resistor layer has a high resistance, for example, such that the resistance of the resistive contact pad structure is increased as a result. For example, the resistance of the resistive contact pad structure may be relatively higher than that of a non-resistive contact pad structure that is laterally adjacent and has only the lower layer (but does not have the resistor layer and the upper layer). For example, the resistor layer comprises a metal or semimetal such as germanium or tellurium, which has a relatively high resistivity (for example, higher than that of copper or nickel or other highly conductive pure metals or alloys). In another example, the resistor layer comprises metal oxides and / or metal nitrides such as tantalum oxide, titanium oxide, aluminum oxide, aluminum nitride, and / or other suitable nitrides or oxides. In yet another example, carbides, oxynitrides, oxycarbides, or oxycarbonitrides of one or more metals may alternatively be used. The selection of the material of the resistor layer may, in one example, depend on the desired resistance of the resistive contact pad structure. 【0015】 【0024】 In the resistive contact pad structure, the upper layer receives the corresponding solder ball or solder bump. In one example, the upper layer of the resistive contact pad structure comprises nickel, copper, aluminum, gold, silver, platinum, and / or other suitable metals / alloys commonly used for contact pad structures. The upper and lower layers of the resistive contact pad structure may be substantially the same. 【0016】 【0025】In one example, the resistive contact pad structure and the non-resistive contact pad structure may be adjacent laterally (see, for example, Figures 2, 3, and 6). In some examples, the first resistive contact pad structure may also be adjacent laterally to the second resistive contact pad structure. In some such examples where the first and second resistive contact pad structures are adjacent laterally, a common continuous monolithic resistor layer may exist for both the first and second resistive contact pad structures. In one example, the first and second resistive contact pad structures may be spaced only tens, hundreds, or thousands of microns apart. Thus, the common resistor layer electrically couples the first and second resistive contact pad structures, but the resistance of the portion of the resistor layer between the two resistive contact pad structures may be relatively high (e.g., in the range of tens or hundreds of ohms, kiloohms, megaohms, or gigaohms).

[0017] 【0026】 In one embodiment, when forming a resistive contact pad structure, the resistor layer is deposited on top of the underlying layer of the resistive contact pad structure, while the underlying layer of the non-resistive contact pad structure is masked off. In some examples, the resistor layer contains a metal oxide, and in some such examples, the resistor layer is deposited conformally using a reactive deposition process. For example, during the reactive deposition process, the metal is deposited on top of the underlying layer of the resistive contact pad structure, and the deposition process is carried out in an oxygen-rich environment. Based on process parameters maintained within the deposition chamber, the deposited metal can be oxidized (or oxidized metal can be deposited), thereby forming a metal oxide resistor layer. In one example, the resistance of the resistor layer can be controlled by controlling the oxidation rate. Exemplary formation processes for resistive contact pad structures are described below with reference to Figures 8 and 9A-9I.

[0018] 【0027】Where used herein, the term “approximately” indicates that the listed values ​​may be modified to some extent, or otherwise within acceptable tolerances, provided that the modification does not result in a nonconformity of the process or device. For example, for some elements, the term “approximately” may refer to a variation of ±0.1%, while for other elements, the term “approximately” may refer to a variation of ±1%, ±10%, or any point within that range. Also, where used herein, a term defined in the singular is intended to include a term defined in the plural, and vice versa.

[0019] 【0028】 Any reference to a numerical range in this specification explicitly includes each number (including fractions and integers) that falls within that range. For example, a reference to the range "at least 50" or "at least about 50" in this specification includes integers such as 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, and 60, and fractions such as 50.1, 50.2, 50.3, 50.4, 50.5, 50.6, 50.7, 50.8, and 50.9. In further examples, references to the range “less than 50” or “about less than 50” in this specification include integers such as 49, 48, 47, 46, 45, 44, 43, 42, 41, 40, and fractions such as 49.9, 49.8, 49.7, 49.6, 49.5, 49.4, 49.3, 49.2, 49.1, 49.0, and so on.

[0020] 【0029】 As used herein, the terms “substantially” or “substantial” are equally applicable when used in a negative sense to refer to the complete or near-complete absence of an action, feature, characteristic, state, structure, item, or result. For example, a “substantially” flat surface is either perfectly flat or so nearly flat that it has the same effect as being perfectly flat.

[0021] 【0030】As used herein, “compositionally different” or “compositionally distinct” materials refer to two materials having different chemical compositions. For example, an alloy of gold and copper may be compositionally different from an alloy of gold, copper, and silver. Similarly, an alloy of gold and copper containing 20% ​​copper may be compositionally different from an alloy of gold and copper containing 30% copper. When two materials are “elementally different,” one material contains elements that the other does not. Thus, an alloy of gold and copper containing 20% ​​copper may be elementally the same as an alloy of gold and copper containing 30% copper.

[0022] Resistive Contact Pad Structure 【0031】 Figure 1 shows a cross-sectional view of an integrated circuit structure 100 according to one embodiment of the present disclosure, comprising a device 108 and a resistive contact pad structure 104 on the device 108, wherein the resistive contact pad structure 104 comprises a layer 124 having a relatively high resistivity (for example, compared to the resistivity of one or more other layers of the resistive contact pad structure 104), wherein the resistive contact pad structure 104 is configured to receive interconnection components such as conductive balls or conductive bumps (see Figure 3 or Figure 5, not shown in Figure 1), wherein the interconnection components couple the device 108 to another device.

[0023] 【0032】 In one embodiment, device 108 may be any suitable device such as an integrated circuit die or chip, a carrier substrate, a printed circuit board, or another suitable device to which interconnecting components such as solder balls or solder bumps can be coupled. An example of device 108 is described below.

[0024] 【0033】In one embodiment, the device 108 includes a conductive wire or trace 112 extending downward from a resistive contact pad structure 104. The wire 112 is coupled to the resistive contact pad structure 104 and is in contact, for example, physically and electrically. In some examples, the wire 112 comprises one or more metals and / or alloys thereof. In some such examples, the wire 112 comprises copper, aluminum, nickel, gold, silver, platinum, and / or another conductive metal used to form the wire or trace within the die, carrier substrate, and / or printed circuit board. The wire 112 electrically couples the resistive contact pad structure 104 to one or more other components of the device 108.

[0025] 【0034】 In one example, the resistive contact pad structure 104 can be considered to be outside of the device 104 and on top of the device 104. In another example, the resistive contact pad structure 104 can be considered to be part of the device 104.

[0026] 【0035】 In one embodiment, the resistive contact pad structure 104 comprises a lower layer 120, an intermediate layer 124, and an upper layer 128, which are referred herein to as the first layer 120, the second layer 124, and the third layer 128, respectively. As shown in the figure, layer 124 is located between layers 120 and 128. For example, layer 124 physically and electrically separates layers 120 and 128, so that layers 120 and 128 can be electrically coupled to each other via layer 124 (for example, layers 120 and 128 cannot directly contact each other).

[0027] 【0036】 For example, to prevent or reduce the opportunity for direct physical contact between layer 120 and layer 128, layer 124 is at least the same size or width as one or both of layers 120 and 128, for example, in the XY axis direction. Thus, in the orientation of Figure 1, the horizontal span of layer 124 is at least the same size as the horizontal span of one or both of layers 120 and 128. In the example of Figure 1, in the horizontal plane, layer 124 is larger than each of layers 120 and 128.

[0028] 【0037】In one embodiment, at least a portion of the upper surface of the device 108 is covered by a mask 116, which in one example is a solder mask. The solder mask 116 has an opening, and the layer 120 extends into the opening of the solder mask 116 and contacts the conductive wire 112, as shown in the figure.

[0029] 【0038】 In one embodiment, layer 120 comprises one or more conductive materials such as metals and / or alloys thereof. In one example, although not shown in Figure 1, layer 120 comprises a barrier or liner layer and a filler material within the barrier or liner layer, but in another example, such a barrier or liner layer may not be present.

[0030] 【0039】 As described below, layer 120 (or other layers similar to layer 120) is configured as a pad to receive solder balls or solder bumps, but due to the structure of the resistive contact pad structure 104, layer 120 does not receive such solder balls or solder bumps. Therefore, in one example, layer 120 comprises a suitable metal and / or alloy thereof that can adhere to solder balls or solder bumps. For example, layer 120 comprises nickel, copper, aluminum, gold, silver, platinum, and / or other suitable metals / alloys commonly used in contact pad structures.

[0031] 【0040】 In one embodiment, layer 128 similarly comprises one or more conductive materials, such as metals and / or alloys thereof. In one example, although not shown in Figure 1, layer 128 comprises a barrier or liner layer and a filler material within the barrier or liner layer, but in another example, such a barrier or liner layer may not be present. Layer 128 is configured as a contact pad structure for receiving solder balls or solder bumps (see, for example, Figure 3). Thus, in one example, layer 128 comprises a suitable metal and / or alloy thereof that can adhere to solder balls or solder bumps. For example, layer 128 comprises nickel, copper, aluminum, gold, silver, platinum, and / or other suitable metals / alloys used for the contact pad structure.

[0032] 【0041】Therefore, layers 120 and 128 are contact pad structures having layer 124 between the two contact pad structures 120 and 128, and the combination of contact pad structures 120 and 128 and layer 124 forms a resistive contact pad structure 104. In one embodiment, layer 124 functions as a resistor (such as an in-line resistor) between the two layers 120 and 128. For example, layer 124 has substantially higher resistivity than layers 120 and 128. As shown in the figure, layers 120, 124, and 128 are in series, with layer 124 between layers 120 and 128. By introducing layer 124 between layers 120 and 128, the overall resistance of the resistive contact pad structure 104 is increased. Therefore, the contact pad structure 104 is also referred to herein as a “resistive” contact pad structure.

[0033] 【0042】 Therefore, in applications where the resistor is designed to be in series with the contact pad, layer 124 is added to the contact pad structure instead of forming a separate resistor. This results in an overall increase in the resistance of the resistive contact pad structure 104, which is equivalent to placing the resistor in series with the contact pad structure.

[0034] 【0043】 In one embodiment, the resistance of the resistor layer 124 can be adjusted, for example, by selecting an appropriate material for layer 124 and / or by adjusting the height H of layer 124 (see Figure 1). For example, a lower height H results in lower resistance between layers 120 and 128. In contrast, a higher height H results in higher resistance between layers 120 and 128, for example, due to the relatively high resistivity of layer 124. In one example, the height H may be in the range of 0.1 to 25 microns, or in one example, a subrange of 0.1 to 20 microns, or 0.1 to 10 microns, or 0.1 to 5 microns, or 0.5 to 25 microns, or 0.5 to 10 microns, or 0.5 to 5 microns, or 1 to 25 microns, or 1 to 15 microns, or 1 to 10 microns, or 1 to 5 microns, or 2 to 25 microns, or 2 to 10 microns, or 2 to 5 microns. As explained, the height H can be a controller for achieving the desired resistance of the resistive contact pad structure 104.

[0035] 【0044】 In one embodiment, layer 124 comprises a resistive material having a higher resistivity than conductive materials such as copper, nickel, aluminum, and / or other metals used in conductive wires and non-resistive contact pads. In one example, depending on the material selection for layers 120, 124, and 128, the resistivity of the resistive material of layer 124 may be, for example, at least 10%, or at least 20%, or at least 40%, or at least 50%, or at least 100%, or at least 200%, or at least 400%, or at least 500%, or at least 10 For example, the resistivity of the resistive material of layer 124 is at least 0.000001 ohms, or at least 0.000016 ohms (e.g., the resistivity of carbon in graphite form), or at least 0.005 ohms (e.g., the resistivity of tellurium), or at least 0.05 ohms, or at least 0.1 ohms, or at least 0.5 ohms, or at least 1 ohm, or at least 5 ohms, or at least 10 ohms, or at least 25 ohms, or at least 100 ohms.

[0036] 【0045】 In one example, the resistive material of layer 124 comprises one or more metals, one or more metalloids, and / or oxides and / or nitrides thereof. For example, layer 124 comprises a metal or metalloid with relatively high resistance (compared to, for example, the resistivity of copper or nickel), such as germanium or tellurium. In another example, layer 124 comprises metal oxides and / or metal nitrides such as tantalum oxide, titanium oxide, aluminum oxide, aluminum nitride, and / or other suitable nitrides or oxides. In yet another example, carbides, oxynitrides, oxycarbides, or oxycarbonitrides of one or more metals may also be used instead. The choice of material for layer 124 may, in one example, depend on the desired resistance of the resistive contact pad structure 104.

[0037] 【0046】In one embodiment, if layer 124 comprises a metal and / or a metal oxide, the oxidation rate can be controlled to control, for example, the resistance of layer 124. Metal oxides may have higher resistance than metals. In one example, the entire metal of layer 124 may be oxidized to achieve, for example, a relatively high resistance. In another example, only (but not the whole) of the metal of layer 124 may be oxidized to achieve, for example, a relatively low resistance. For example, the surface area of ​​the metal of layer 124 may be oxidized to achieve a relatively low resistance. Thus, in one example, the amount of metal of layer 124 that is oxidized can be controlled to adjust the resistance of layer 124.

[0038] 【0047】 Therefore, as described above, depending on the thickness or height H of layer 124 and / or the choice of material for layer 124, layer 124 can have a higher resistance compared to, for example, layers 120 and / or 128. For example, the resistances of layers 120 and 128 can be measured as fractions of ohms, or a few ohms (e.g., less than 100 ohms, or less than 50 ohms, or less than 20 ohms, or less than 10 ohms, or less than 5 ohms, or less than 2 ohms, or less than 1 ohm). In contrast, the resistance of layer 124 (for example, for current conduction between layers 120 and 128) may be, for example, tens of ohms, or hundreds of ohms, or several kilohms, or several megahms (for example, at least 10 ohms, or at least 20 ohms, or at least 50 ohms, or at least 100 ohms, or at least 200 ohms, or at least 500 ohms, or at least 1,000 ohms, or at least 2,000 ohms, or at least 5,000 ohms, or at least 10,000 ohms).

[0039] 【0048】 As shown in Figure 1, layer 120 has a width W along the X-axis direction in Figure 1, for example. For example, the mask 116 has an opening with a width W, and the layer 120 is formed at least partially within the opening. The width W may range from a few microns to several hundred microns, depending on the application area in which the resistive contact pad structure 104 is used. For example, if the resistive contact pad structure 104 is on a die in a flip-chip configuration or on the surface of a carrier substrate facing the die (for example, if the resistive contact pad structure 104 is subjected to solder bumps), as described below, the width W may be in the range of 10 to 200 microns, such as 10 to 150 microns, or 10 to 100 microns, or 10 to 50 microns, or 50 to 200 microns, or a partial range of 50 to 100 microns. In another example, as will be described below, if the resistive contact pad structure 104 is on a printed circuit board (PCB) or on the surface of a carrier substrate facing the PCB (for example, if the resistive contact pad structure 104 receives solder balls), the width W may be in the range of 200 to 900 microns, such as a partial range of 200 to 700 microns, or 200 to 400 microns, or 400 to 900 microns, or 400 to 600 microns, or 500 to 900 microns.

[0040] 【0049】 Figure 2 shows a cross-sectional view of an integrated circuit structure 200 according to one embodiment of the present disclosure, comprising the resistive contact pad structure 104 of Figure 1 and a non-resistive contact pad structure 220 laterally adjacent to the resistive contact pad structure 104. The resistive contact pad structure 104 in Figure 2 is the same as the resistive contact pad structure 104 in Figure 1, and the various layers of the two resistive contact pad structures 104 in the two figures are similarly labeled.

[0041] 【0050】The structure 200 in Figure 2 further includes a conventional or non-resistive contact pad structure 220. Unlike the resistive contact pad structure 104 (which includes, for example, a resistive layer 124), the contact pad structure 220 does not include such a resistive layer and is therefore referred to herein as a "conventional contact pad structure" or "non-resistive contact pad structure". Thus, the contact pad structure 220 has substantially less resistance than the resistive contact pad structure 104 and is therefore also called a conventional or non-resistive contact pad structure.

[0042] 【0051】 In one example, the non-resistive contact pad structure 220 is similar to layer 120 of the resistive contact pad structure 104. For example, layer 120 may be configured as a non-resistive contact pad structure, and the resistive contact pad structure 104 is obtained by adding layers 124 and 128 to layer 120. For example, layers 120 and 220 may be formed using a common process flow, resulting in layers 120 and 220 that are compositionally or elementally similar and / or dimensionally similar. Then, layers 124 and 128 are formed on layer 120 to obtain the resistive contact pad structure 104. In one example, the upper and / or lower surfaces of layer 120 are substantially coplanar with the upper and / or lower surfaces of layer 220, respectively.

[0043] 【0052】Figure 3 shows a cross-sectional view of the integrated circuit structure 200 of Figure 2, having two interconnection elements 304 and 344 on a resistive contact pad structure 104 and a non-resistive contact pad structure 220, respectively, according to one embodiment of the present disclosure. In one embodiment, the interconnection elements 304 and 344 are, for example, solder bumps or solder balls, depending on the application in which the contact pad structures 104 and 220 are located. For example, as described below, if the contact pad structures 104 and 220 are on a die in a flip-chip configuration or on the surface of a carrier substrate facing the die, the interconnection elements 304 and 344 may be conductive bumps such as solder bumps. In another example, also described below, if the contact pad structures 104 and 220 are on a PCB or on the surface of a carrier substrate facing the PCB, the interconnection elements 304 and 344 may be conductive balls such as solder balls.

[0044] 【0053】 In one example, the diameter of interconnection element 304 along the vertical Z-axis is d1, and the diameter of interconnection element 344 along the vertical Z-axis is d2. Due to the height H of layer 124 and the height of layer 128, diameter d1 is greater than diameter d2. Diameters d1 and d2 are in the range of tens or hundreds of microns, for example, at least 20 microns, or at least 40 microns, or at least 50 microns, or at least 70 microns, or at least 100 microns, or at least 150 microns, or at least 200 microns, or at least 400 microns, depending on the application in which the contact pad structures 104 and 220 are used.

[0045] 【0054】 In one example, since diameters d1 and d2 are substantially higher than the heights of layers 124 and 128, the difference between diameters d1 and d2 can be ignored. For example, the difference between diameters d1 and d2 is small enough that interconnect components 304 and 344 can be formed using dimensionally similar solder material (or another conductive material). For example, interconnect components 304 and 344 can be formed using the same interconnect component formation process without using additional processing to account for the difference in diameters d1 and d2.

[0046] 【0055】 However, in another example, since the diameter d1 may be smaller than the diameter d2, less conductive material may be used to form the interconnection component 304 than is used to form the interconnection component 344.

[0047] 【0056】 As shown in the figure, the lower surface of interconnection component 344 is on a first horizontal plane that is lower than the second horizontal plane of the lower surface of interconnection component 304. Therefore, as shown in Figure 3, the lower surface of interconnection component 344 is lower than the lower surface of interconnection component 304.

[0048] 【0057】 Figure 4 illustrates a cross-sectional view of an integrated circuit structure 400 comprising two laterally adjacent resistive contact pad structures 104a and 104b according to one embodiment of the present disclosure, wherein the two resistive contact pad structures 104a and 104b are coupled by a continuous monolithic resistor layer 324 common to both resistive contact pad structures 104a and 104b. For example, resistive contact pad structure 104a comprises layers 120a, 324, and 128a, respectively, which are elementally and / or compositionally similar to the layers 120, 124, and 128 of the resistive contact pad structure 104 of Figure 1. Similarly, resistive contact pad structure 104b comprises layers 120b, 324, and 128b, respectively, which are elementally and / or compositionally similar to the layers 120, 124, and 128 of the resistive contact pad structure 104 of Figure 1.

[0049] 【0058】 Therefore, the resistive contact pad structures 104a and 104b each have a structure similar to the resistive contact pad structure 104 described above in Figure 1. However, in Figure 4, the resistor layer 324 is common to both the resistive contact pad structures 104a and 104b. For example, layer 324 extends continuously and monolithically between the resistive contact pad structures 104a and 104b. Thus, a portion of layer 324 is included in the resistive contact pad structure 104a, and another portion of layer 324 is included in the resistive contact pad structure 104b.

[0050] 【0059】As described above, the resistor layer 324 has a relatively high resistivity, for example, substantially higher than the resistivity of layers 120a, 120b, 128a, and 128b. As shown in Figure 4, the resistive contact pad structures 104a and 104 are separated by a lateral distance D. In one example, the distance D is, for example, at least 100 microns, or at least 200 microns, or at least 400 microns, or at least 600 microns, or at least 800 microns, or at least 1000 microns, or at least 1500 microns, or at least 2000 microns, or at least 3000 microns, or at least 4000 microns, or at least 5000 microns. Thus, the resistance of part of layer 324 between the two resistive contact pad structures 104a and 104b is in the megaohm or gigaohm range. For example, the resistance of a portion of layer 324 between two resistive contact pad structures 104a and 104b is at least 1 megaohm, or at least 5 megaohms, or at least 20 megaohms, or at least 50 megaohms, or at least 100 megaohms, or at least 200 megaohms, or at least 400 megaohms, or at least 500 megaohms, or at least 800 megaohms, or at least 1,000 megaohms, or at least 2,000 megaohms. Thus, layer 324 physically and electrically couples the two resistive contact pad structures 104a and 104b, but due to the aforementioned high resistance of the portion of layer 324 between the two resistive contact pad structures 104a and 104b, it can be considered, in practice, that the two resistive contact pad structures 104a and 104b are electrically insulated from each other.

[0051] 【0060】For example, layer 324 may be common to both resistive contact pad structures 104a and 104b, for instance, due to the ease of forming layer 324. For example, during the formation of structure 400, layer 324 may be blanket-deposited on layers 120a and 120b. Since both resistive contact pad structures 104a and 104b use the resistor layer 324, and due to the high resistivity of layer 324 as described above, the portion of layer 324 between the two resistive contact pad structures 104a and 104b does not need to be removed later, thereby forming structure 400 in Figure 4.

[0052] 【0061】 Figure 5 illustrates a cross-sectional view of an integrated circuit structure 500 according to one embodiment of the present disclosure, comprising two laterally adjacent resistive contact pad structures 104a and 104b (see, for example, Figure 4) and another laterally adjacent non-resistive contact pad structure 220 (see, for example, Figures 2 and 3). For example, the resistive contact pad structures 104a, 104b and the non-resistive contact pad structure 220 are coupled to interconnection components 304a, 304b, and 344, respectively. The structure 500 in Figure 5 will become apparent based on the above description relating to Figures 1 to 4.

[0053] 【0062】 Figure 6 illustrates a cross-sectional view of an integrated circuit structure 600 according to one embodiment of the present disclosure, comprising a device 108 and an integrated resistor pad 604 on the device 108, wherein the integrated resistor pad 604 comprises a layer 124 that has a relatively high resistivity (compared to, for example, the resistivity of one or more other layers of the resistor contact pad structure 104) and is in contact with a conductive wire 112. Thus, the structure 600 in Figure 6 is at least partially similar to the structure 100 in Figure 1, and the similar components of the two structures are labeled using the same labels. However, unlike structure 100 which includes an underlayer 120, structure 600 does not include such an underlayer. Rather, the resistor layer 124 is in direct contact with the conductive wire 112. Structure 600 will become clear based on the description relating to structure 100 in Figure 1. In one example, the above description relating to one or more of Figures 2 to 5 may also apply to structure 600 in Figure 6.

[0054] 【0063】Figure 7A shows a cross-sectional view of an integrated circuit system 700 according to one embodiment of the present disclosure, which uses one or more of the resistive contact pad structures described with respect to Figures 1 to 6. The integrated circuit system 700 comprises a flip-chip integrated circuit package 701, and the integrated circuit chip or die 704 is arranged in a flip-chip configuration on the upper surface of the carrier substrate 708 of the integrated circuit package 701 (for example, mounted face down). As shown in the figure, the die 704 is coupled to the carrier substrate 708 via a plurality of interconnection components 712. In one example, the interconnection components 712 are conductive bumps such as solder bumps. For example, the solder bumps 712 are arranged in an array or peripheral bump layout. An underfill material 705 is located between the die 704 and the carrier substrate 708.

[0055] 【0064】 As shown in the figure, each interconnection component 712 is coupled to the die 704 via a corresponding contact pad structure 716 and to the carrier substrate 708 via a corresponding contact pad structure 717. Thus, there are multiple contact pad structures 716 coupled to the die 704 and multiple other contact pad structures 717 coupled to the carrier substrate 708.

[0056] 【0065】 In one embodiment, at least some of the contact pad structures 716 are the same as the resistive contact pad structures 104, 104b, and / or 104b described above with respect to Figures 1 to 6, and the rest of the contact pad structures 716 are the same as the non-resistive contact pad structures 220 described above with respect to Figures 2 to 6. Similarly, in one embodiment, at least some of the contact pad structures 717 are the same as the resistive contact pad structures 104, 104b, and / or 104b described above with respect to Figures 1 to 6, and the rest of the contact pad structures 717 are the same as the non-resistive contact pad structures 220 described above with respect to Figures 2 to 6.

[0057] 【0066】As shown in Figure 7A, the carrier substrate 708 is coupled to the PCB 728 via a plurality of interconnection components 720. In one example, the interconnection components 720 are conductive balls such as solder balls. For example, the carrier substrate 708 is coupled to the PCB 728 via the interconnection components 720 in, for example, a ball grid array (BGA) configuration and / or another suitable configuration for coupling the carrier substrate to the PCB. In one example, the PCB may be a circuit card assembly (CCA).

[0058] 【0067】 As shown in the figure, each interconnection component 720 is coupled to the carrier substrate 708 via a corresponding contact pad structure 718 on the carrier substrate 708, and to the PCB 728 via a corresponding contact pad structure 718 on the PCB 728. Therefore, there are multiple contact pad structures 718 coupled to the carrier substrate 708 and multiple other contact pad structures 719 coupled to the PCB 719.

[0059] 【0068】 In one embodiment, at least some of the contact pad structures 718 are the same as the resistive contact pad structures 104, 104b, and / or 104b described above with respect to Figures 1 to 6, and the rest of the contact pad structures 718 are the same as the non-resistive contact pad structures 220 described above with respect to Figures 1 to 6. Similarly, in one embodiment, at least some of the contact pad structures 719 are the same as the resistive contact pad structures 104, 104b, and / or 104b described above with respect to Figures 1 to 6, and the rest of the contact pad structures 719 are the same as the non-resistive contact pad structures 220 described above with respect to Figures 1 to 6.

[0060] 【0069】Therefore, in one example, the device 108 in Figures 1 to 6 may be any of the die 704, the carrier substrate 708, and / or the PCB 728, and the resistive contact pad structures 104, 104a, and 104b described above may be any of the contact pad structures 716, 717, 718, and / or 719 in Figure 7A. Thus, the resistive contact pad structures 104, 104a, and 104b described above can be applied (i) at the die level (e.g., as one or more of the contact pad structures 716, 717), (ii) at the IC package level (e.g., as one or more of the contact pad structures 718), and / or (iii) at the circuit board level (e.g., as one or more of the contact pad structures 719).

[0061] 【0070】 Figure 7B illustrates a cross-sectional view of another integrated circuit system 750 according to one embodiment of the present disclosure, which uses one or more of the resistive contact pad structures described with respect to Figures 1 to 6. The integrated circuit system 750 comprises a wire-bonded integrated circuit package, and the integrated circuit chip or die 754 is arranged on a carrier substrate 758 in a wire-bonded configuration. As shown, the die 754 is coupled to the carrier substrate 758 via a plurality of conductive wires 760. In one example, each wire 760 is coupled to the die 766 via a corresponding contact pad structure 766 and to the carrier substrate 758 via a corresponding contact pad structure 769. Thus, there are a plurality of contact pad structures 766 coupled to the die 754 and a plurality of other contact pad structures 769 coupled to the carrier substrate 758.

[0062] 【0071】In one embodiment, at least some of the contact pad structures 766 are similar to the resistive contact pad structures 104, 104b, and / or 104b described above with respect to Figures 1 to 6, and the rest of the contact pad structures 766 are similar to the non-resistive contact pad structures 220 described above with respect to Figures 2 to 6. Similarly, in one embodiment, at least some of the contact pad structures 769 are similar to the resistive contact pad structures 104, 104b, and / or 104b described above with respect to Figures 1 to 6, and the rest of the contact pad structures 769 are similar to the non-resistive contact pad structures 220 described above with respect to Figures 2 to 6.

[0063] 【0072】 Figure 8 illustrates a flowchart illustrating a method 800 for forming the exemplary integrated circuit structures shown in Figures 1 to 6 according to one embodiment of the present disclosure. Figures 9A, 9B, 9C, 9D, 9E, 9F, 9G, 9H, and 9I collectively illustrate exemplary integrated circuit structures 900 at various stages of the process according to the method 800 of Figure 8 according to one embodiment of the present disclosure. Figures 8 and 9A to 9I are described together.

[0064] 【0073】 Referring to Figure 8, in method 804, device 108 is formed, and device 108 has a solder mask 116 on its upper surface. Device 108 may be any of the devices in Figure 7A or Figure 7B, such as any of the dies 704, 754, any of the carrier substrates 708, 758, or PCB 728. Device 108 can be formed using appropriate techniques for forming such devices. Furthermore, in method 804, one or more portions of the upper surface of device 108 are masked using one or more masks 904. Device 108 having masks 904 on it is shown in Figure 9A. Masks 904 may be hard masks, shadow masks, or other appropriate types of masks.

[0065] 【0074】Method 800 proceeds from 804 to 808. In 808, a portion of the solder mask 116 is removed through an opening 905 in the mask 904 (see, for example, Figure 9B), and layers 120 and 220 are formed through the opening 905 (see, for example, Figure 9C). The solder mask 116 may be removed using appropriate etching techniques. In one example, the opening 905 is located above the conductive wires 112 and 212, and as a result, layers 120 and 220 are formed above and in contact with the conductive wires 112 and 212, respectively. Exemplary conductive materials for layers 120 and 220 are described above. In one embodiment, layers 120, 220 may be formed using a suitable deposition process (e.g., conformal deposition process) such as sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), vapor-phase epitaxy (VPE), molecular beam epitaxy (MBE), or liquid-phase epitaxy (LPE).

[0066] 【0075】 Method 800 proceeds from 808 to 812. In 812, mask 904 is removed (see, e.g., Figure 9D), and layer 220 is masked using one or more masks 908, the masks 908 forming another opening 909 above layer 120 (see, e.g., Figure 9E). Mask 908 may be a hard mask, or a shadow mask, or any other suitable type of mask. In one example, the opening 909 is at least the same width as layer 120. In the example in Figure 9E, the opening 909 is wider than layer 120.

[0067] 【0076】Method 800 proceeds from 812 to 816. In 816, layer 124 is formed above layer 120 through opening 909, where layer 124 is at least the same width as layer 120, as shown in Figure 9F. In one example, as described above, layer 124 comprises one or more metals, and / or their oxides and / or nitrides. For example, layer 124 comprises a relatively high-resistance metal such as germanium or tellurium. In another example, layer 124 comprises metal oxides and / or metal nitrides such as tantalum oxide, titanium oxide, aluminum oxide, aluminum nitride, and / or other suitable nitrides or oxides. In yet another example, carbides, oxynitrides, oxycarbides, or oxycarbonitrides of one or more metals may also be used instead.

[0068] 【0077】 In one example, layer 124 is deposited using a suitable deposition process (e.g., conformal deposition process) such as sputtering, CVD, PVD, ALD, VPE, MBE, or LPE. In examples where layer 124 comprises an oxide (such as a metal oxide), a reactive deposition process may be used. For example, during a reactive deposition process, the metal may be deposited in an oxygen-rich chamber or environment, and process parameters (such as temperature and pressure) may be controllers to ensure that the metal oxide is formed during the deposition process itself. For example, layer 124 comprising a metal oxide can be formed using a reactive sputtering process, a reactive PVD process, a reactive AVD process, a reactive CVD process, or another suitable reactive deposition process. Thus, in the case of a reactive deposition process, not only is the exposed surface of layer 124 equipped with a metal oxide, but the metal oxide is also present in the unexposed portions of layer 124. In one example, the amount of metal in layer 124 to be oxidized can be controlled (e.g., by adjusting the parameters of the reactive deposition process) to adjust the resistance of layer 124.

[0069] 【0078】In another example, a metal can be deposited using a conventional deposition process (e.g., not a reactive deposition process), and then the metal can be oxidized to form a metal oxide on the exposed surface of the metal. In this case, since only the exposed surface of layer 124 is mainly oxidized, the resistance of layer 124 is relatively small (compared to the above scenario in which a reactive deposition process is used, for example).

[0070] 【0079】 Method 800 proceeds from 816 to 820. In 820, mask 908 is removed, and layer 220 is masked using another mask 912, which forms another opening 913 above layer 124, as shown in Figure 9G. In one example, the opening 913 may be equal to or smaller than the width of layer 124.

[0071] 【0080】 Method 800 proceeds from 820 to 824. In 824, as illustrated in Figure 9H, layer 128 is formed above layer 124 through opening 913. Then, as illustrated in Figure 9I, the mask 912 is removed. Layer 128 is deposited using a suitable deposition process (e.g., conformal deposition process) such as sputtering, CVD, PVD, ALD, VPE, MBE, or LPE. This completes the formation of the resistive contact pad structure 104 comprising layers 120, 124, and 128, where the resistive contact pad structure 104 is adjacent to the non-resistive contact pad structure 220. Although not illustrated in Method 800, in one example, interconnection elements 304 and 344 may be formed above the resistive contact pad structure 104 and the non-resistive contact pad structure 220, as described with respect to Figure 3, for example.

[0072] 【0081】 Method 800 can be appropriately modified to form structure 400 of Figure 4. For example, during the formation of structure 400, layer 324 can be blanket-deposited on layers 120a and 120b (for example, the mask 908 used to form layer 124 in method 800 can be appropriately modified). Thus, a continuous and monolithic layer 324 can be formed spanning the laterally adjacent resistive contact pad structures 104a and 104b of structure 400.

[0073] 【0082】 Similarly, method 800 can be appropriately modified to form structure 500 of Figure 5, for example, by forming two laterally adjacent resistive contact pad structures 104a and 104b and one laterally adjacent non-resistive contact pad structure 220. Method 800 can also be appropriately modified to form structure 600 of Figure 6, for example, by skipping the formation of layer 120 (for example, mask 904 may not have an opening for forming layer 120).

[0074] 【0083】 It should be noted that the processes in Method 800 are presented in a specific order for the sake of clarity. However, according to some embodiments, one or more of the processes may be performed in a different order, or not at all (and thus may be optional). Based on this disclosure, numerous variations of Method 800 and the techniques described herein will become apparent.

[0075] Further exemplary embodiments 【0084】 The following examples relate to further embodiments, from which numerous substitutions and configurations will become apparent.

[0076] 【0085】 Example 1 An integrated circuit structure comprising a first layer comprising a first metal, a second layer located above and in contact with the first layer, a third layer located above and in contact with the second layer, the second layer comprising a resistive material, and the third layer comprising a second metal, wherein the resistive material is different from one or both of the first and second metals, and comprises interconnecting components located above and in contact with the second layer.

[0077] 【0086】 Example 2: The integrated circuit structure described in Example 1, wherein the interconnection components are solder bumps or solder balls.

[0078] 【0087】Example 3: The integrated circuit structure according to Example 1 or 2, wherein the resistivity of the resistive material is at least 20% greater than the resistivity of the first and third layers, respectively.

[0079] 【0088】 Example 4 An integrated circuit structure according to any one of Examples 1 to 3, wherein the resistive material comprises one or more of the following: (i) a third metal different from the first and second metals, (ii) a metalloid, and (iii) the third metal and at least one of oxygen and nitrogen.

[0080] 【0089】 Example 5: An integrated circuit structure according to any one of Examples 1 to 4, wherein the first and second metals are the same metal.

[0081] 【0090】 Example 6 The integrated circuit structure according to any one of Examples 1 to 5, wherein the first layer is in contact with or part thereof an integrated circuit die, and the interconnecting components are located between the integrated circuit die and the carrier substrate, and the interconnecting components are solder bumps.

[0082] 【0091】 Example 7 The integrated circuit structure according to any one of Examples 1 to 6, wherein the first layer is in contact with or part thereof a carrier substrate, and the interconnection component is between the carrier substrate and the integrated circuit die, and the interconnection component is a solder bump.

[0083] 【0092】 Example 8 The integrated circuit structure according to any one of Examples 1 to 7, wherein the first layer is in contact with or part of the integrated circuit package, and the interconnecting component is between the integrated circuit package and the printed circuit board, and the interconnecting component is a solder ball.

[0084] 【0093】 Example 9 The integrated circuit structure according to any one of Examples 1 to 7, wherein the first layer is in contact with or part thereof a printed circuit board, and the interconnecting component is between the printed circuit board and the integrated circuit package, and the interconnecting component is a solder ball.

[0085] 【0094】 Example 10 The interconnecting component is a first interconnecting component, wherein the integrated circuit structure further comprises a fourth layer comprising a first metal, wherein a second layer is above the fourth layer and in contact with the fourth layer, wherein the second layer extends continuously and monolithically from above the first layer to above the fourth layer, and a fifth layer above the second and fourth layers, and a second interconnecting component comprising a second metal, which is above the fifth layer and in contact with the fifth layer.

[0086] 【0095】 Example 11: The integrated circuit structure according to Example 10, wherein the first and second interconnection components are either solder bumps or solder balls.

[0087] 【0096】 Example 12 A device, a resistive contact pad structure on the device, and an integrated circuit structure comprising: (i) a lower layer comprising a first metal; (ii) an upper layer above the lower layer, the upper layer comprising a second metal; and (iii) a resistor between the lower and upper layers, wherein the resistivity of the resistor is at least 20% greater than the resistivity of the lower and upper layers respectively, and solder balls or solder bumps on the resistive contact pad structure, the solder balls or solder bumps configured to couple the device to another device.

[0088] 【0097】 Example 13 The integrated circuit structure according to Example 12, wherein the resistor comprises a third metal and one or both of oxygen and nitrogen, wherein the third metal is elementally different from each of the first and second metals.

[0089] 【0098】Example 14 The integrated circuit structure according to Example 12 or 13, wherein the resistive contact pad structure is a first resistive contact pad structure, wherein the lower layer is a first lower layer, wherein the upper layer is a first upper layer, wherein the integrated circuit structure further comprises a second resistive contact pad structure on the device, wherein the second resistive contact pad structure is laterally adjacent to the first resistive contact pad structure, and the second resistive contact pad structure comprises (i) a second lower layer comprising a first metal, (ii) a second upper layer above the second lower layer, wherein the second upper layer comprises a second metal, and (iii) a resistor between the second lower layer and the second upper layer, wherein the resistor extends continuously and monolithically from between the first upper layer and the first lower layer to between the second upper layer and the second lower layer, wherein the resistor is part of both the first resistive contact pad structure and the second resistive contact pad structure.

[0090] 【0099】 Example 15 An integrated circuit structure according to any one of Examples 12 to 14, further comprising a non-resistive contact pad structure laterally adjacent to a resistive contact pad structure, wherein the non-resistive contact pad structure comprises a layer comprising a first metal, wherein the bottom surface of the layer of the non-resistive contact pad structure is coplanar with the bottom surface of the lower layer of the resistive contact pad structure, wherein the non-resistive contact pad structure lacks a resistor.

[0091] 【0100】 Example 16 The integrated circuit structure according to Example 15, wherein the solder ball or solder bump is a first solder ball or solder bump, wherein the integrated circuit structure further comprises a second solder ball or solder bump on a layer of non-resistive contact pad structure, wherein the lower surface of the second solder ball or solder bump is in a first horizontal plane lower than the second horizontal plane of the lower surface of the first solder ball or solder bump.

[0092] 【0101】 Example 17: An integrated circuit structure according to any one of Examples 12 to 16, wherein the device is one of an integrated circuit die, an integrated circuit package, and a printed circuit board (PCB).

[0093] 【0102】Example 18 A method for forming a resistive contact pad structure and a non-resistive contact pad structure of an integrated circuit structure, comprising: forming a first pad and a laterally adjacent second pad on a device; forming a resistor on the first pad without forming any resistor on the second pad; and forming a third pad on the resistor and above the first pad, wherein the combination of the first pad, the resistor, and the third pad forms a resistive contact pad structure of the device, and wherein the second pad forms a non-resistive contact pad structure of the device.

[0094] 【0103】 Example 19 The method of Example 18, further comprising depositing a first interconnection component of a third pad and a second interconnection component of a second pad, wherein each of the first and second interconnection components is a corresponding solder ball or solder bump.

[0095] 【0104】 Example 20 The method according to Example 18 or 19, wherein forming a fourth pad laterally adjacent to a first pad and a second pad on a device, wherein forming a resistor comprises (i) forming a first portion of a resistor on the first pad and (ii) forming a second portion of a resistor on the fourth pad, wherein the first and second portions of the resistor are part of a monolithic resistor structure, and forming a fifth pad on the second portion of the resistor and above the fourth pad, wherein the combination of the fourth pad, the second portion of the resistor and the fifth pad forms another resistive contact pad structure on the device.

[0096] 【0105】 The foregoing description of exemplary embodiments has been presented for illustrative and explanatory purposes only. It is not intended to be exhaustive or to limit this disclosure to the exact form disclosed. Many modifications and variations are possible based on this disclosure. The scope of this disclosure is intended to be limited not by this detailed description, but rather by the claims appended to this specification. Future applications claiming priority to this application may assert the disclosed subject matter in different ways and may generally include any set of one or more limitations as variously disclosed or otherwise demonstrated herein.

Claims

[Claim 1] Integrated circuit structure, A first layer comprising a first metal, A second layer is located above the first layer and is in contact with the first layer, and the second layer comprises a resistive material. A third layer is located on and in contact with the second layer, and the third layer comprises a second metal, wherein the resistive material is different from one or both of the first and second metals. An integrated circuit structure comprising interconnecting components located above the second layer and in contact with the second layer. [Claim 2] The integrated circuit structure according to claim 1, wherein the interconnection component is a solder bump or a solder ball. [Claim 3] The integrated circuit structure according to claim 1, wherein the resistivity of the resistive material is at least 20% greater than the resistivity of the first and third layers, respectively. [Claim 4] The integrated circuit structure according to claim 1, wherein the resistive material comprises one or more of the following: (i) a third metal different from the first and second metals, (ii) a metalloid, and (iii) the third metal and at least one of oxygen and nitrogen. [Claim 5] The integrated circuit structure according to claim 1, wherein the first and second metals are the same metal. [Claim 6] The integrated circuit structure according to claim 1, wherein the first layer is in contact with or part thereof an integrated circuit die, and the interconnection component is located between the integrated circuit die and the carrier substrate, and the interconnection component is a solder bump. [Claim 7] The integrated circuit structure according to claim 1, wherein the first layer is in contact with or part thereof a carrier substrate, and the interconnecting component is located between the carrier substrate and the integrated circuit die, and the interconnecting component is a solder bump. [Claim 8] The integrated circuit structure according to claim 1, wherein the first layer is in contact with or part thereof an integrated circuit package, and the interconnection component is located between the integrated circuit package and a printed circuit board, and the interconnection component is a solder ball. [Claim 9] The integrated circuit structure according to claim 1, wherein the first layer is in contact with or part thereof a printed circuit board, and the interconnecting component is located between the printed circuit board and the integrated circuit package, and the interconnecting component is a solder ball. [Claim 10] The aforementioned interconnection component is a first interconnection component, and in this case, the integrated circuit structure is A fourth layer comprising the first metal, wherein the second layer is above the fourth layer and in contact with the fourth layer, and wherein the second layer extends continuously and monolithically from above the first layer to above the fourth layer. A fifth layer is located above the second and fourth layers, and the fifth layer comprises the second metal. The integrated circuit structure according to claim 1, further comprising a second interconnection component located above the fifth layer and in contact with the fifth layer. [Claim 11] The integrated circuit structure according to claim 10, wherein the first and second interconnection components are either solder bumps or solder balls. [Claim 12] Integrated circuit structure, Devices and The resistive contact pad structure on the device, the resistive contact pad structure comprising (i) a lower layer comprising a first metal, (ii) an upper layer above the lower layer, the upper layer comprising a second metal, and (iii) a resistor between the lower layer and the upper layer, wherein the resistivity of the resistor is at least 20% greater than the resistivity of the lower layer and the upper layer, respectively. An integrated circuit structure comprising solder balls or solder bumps on the resistive contact pad structure, wherein the solder balls or solder bumps are configured to couple the device to another device. [Claim 13] The integrated circuit structure according to claim 12, wherein the resistor comprises a third metal and one or both of oxygen and nitrogen, wherein the third metal is elementally different from each of the first and second metals. [Claim 14] The resistive contact pad structure is a first resistive contact pad structure, wherein the lower layer is a first lower layer, wherein the upper layer is a first upper layer, wherein the integrated circuit structure is The device further comprises a second resistive contact pad structure on the device, the second resistive contact pad structure being laterally adjacent to the first resistive contact pad structure, the second resistive contact pad structure comprising (i) a second lower layer comprising the first metal, (ii) a second upper layer above the second lower layer, the second upper layer comprising the second metal, and (iii) the resistor between the second lower layer and the second upper layer. The integrated circuit structure according to claim 12, wherein the resistor extends continuously and monolithically from between the first upper layer and the first lower layer to between the second upper layer and the second lower layer, and wherein the resistor is part of both the first resistive contact pad structure and the second resistive contact pad structure. [Claim 15] The integrated circuit structure according to claim 12, further comprising a non-resistive contact pad structure laterally adjacent to the resistive contact pad structure, wherein the non-resistive contact pad structure comprises a layer comprising the first metal, wherein the bottom surface of the layer of the non-resistive contact pad structure is on the same plane as the bottom surface of the lower layer of the resistive contact pad structure, wherein the non-resistive contact pad structure lacks a resistor. [Claim 16] The aforementioned solder ball or solder bump is a first solder ball or solder bump, and the aforementioned integrated circuit structure is The non-resistive contact pad structure further comprises a second solder ball or solder bump on the layer, The integrated circuit structure according to claim 15, wherein the lower surface of the second solder ball or solder bump is on a first horizontal plane that is lower than the second horizontal plane of the lower surface of the first solder ball or solder bump. [Claim 17] The integrated circuit structure according to claim 12, wherein the device is one of an integrated circuit die, an integrated circuit package, and a printed circuit board (PCB). [Claim 18] A method for forming a resistive contact pad structure and a non-resistive contact pad structure of an integrated circuit structure, The device is formed with a first pad and a second pad adjacent to it in the lateral direction. A resistor is formed on the first pad without forming a resistor on the second pad, A method comprising forming a third pad on the resistor and above the first pad, wherein the combination of the first pad, the resistor, and the third pad forms a resistive contact pad structure of the device, and wherein the second pad forms a non-resistive contact pad structure of the device. [Claim 19] The method of claim 18, further comprising depositing the first interconnection component of the third pad and the second interconnection component of the second pad, wherein each of the first and second interconnection components is a corresponding solder ball or solder bump. [Claim 20] Forming a fourth pad laterally adjacent to the first pad and the second pad on the device, and thereby forming the resistor, comprises (i) forming a first section of the resistor on the first pad and (ii) forming a second section of the resistor on the fourth pad, wherein the first section and the second section of the resistor are part of a monolithic resistor structure. The method according to claim 18, further comprising forming a fifth pad on the second section of the resistor and above the fourth pad, wherein the combination of the fourth pad, the second section of the resistor, and the fifth pad forms another resistive contact pad structure of the device.

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