Batch processing thin film deposition system

Abstract

A substrate processing apparatus (100) comprises a reaction chamber (120) configured to accommodate a batch of multiple substrates (130) arranged so that their faces face each other to form a substrate stack, and a fluid distributor (600) for establishing a fluid flow into the reaction chamber. The fluid distributor is configured to diffuse the fluid flow in the height direction of the substrate stack in order to enable the laminar flow generated in the reaction chamber to propagate along the entire length of the reaction chamber and through the substrate stack.

Claims

1. A substrate processing apparatus, A reaction chamber configured to house batches (bundles, groups) of multiple substrates arranged so that their faces face each other, forming a substrate stack; A fluid distributor for establishing fluid flow to the reaction chamber; Equipped with, A substrate processing apparatus wherein the fluid distributor is configured to diffuse the fluid flow in the height direction of the substrate stack in order to enable the laminar flow generated in the reaction chamber to propagate throughout the entire length of the reaction chamber and through the substrate stack.

2. The substrate processing apparatus according to claim 1, wherein the liquid distributor includes a transition region formed to diffuse the flow of fluid entering the reaction chamber laterally.

3. The substrate processing apparatus according to claim 1 or 2, wherein the fluid distributor is configured to diffuse the fluid to the height of the substrate stack before the fluid enters the reaction chamber.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the liquid distributor comprises two opposing diffusion regions configured to supply fluid flows that meet in the subsequent transition region of the liquid distributor.

5. The substrate processing apparatus according to claim 4, wherein the fluid distributor enables the fluid flow meeting in the transition region to be redirected, as a mixed flow, toward the reaction chamber, preferably by substantially 90 degrees.

6. The substrate processing apparatus according to claim 4 or 5, wherein the two opposing diffusion regions are triangular in shape.

7. The substrate processing apparatus according to any one of claims 4 to 6, wherein the two opposing diffusion regions are formed within a flange structure.

8. A substrate processing apparatus according to any of the preceding claims, configured to supply a fluid flow that is uniformly distributed in the height direction of the substrate stack.

9. The fluid distributor has a diffusion space comprising a plurality of diffusion regions, in each of the plurality of diffusion regions, fluid flows in through at least one inlet located in the diffusion region, and the flow of the fluid propagates through the diffusion region in a direction opposite to the flow of fluid flowing in from the other diffusion regions; Furthermore, the fluid distributor has a transition region, and the fluid flows that reach the transition region from each of the plurality of diffusion regions are mixed in the transition region, and the transition region is configured to guide the mixed flow as a laminar flow to the reaction chamber; A substrate processing apparatus according to any of the preceding claims.

10. The substrate processing apparatus according to any of the preceding claims, wherein the fluid distributor is integrated with the reaction chamber.

11. The substrate processing apparatus according to any of the preceding claims, wherein the fluid distributor is provided with a removable cover.

12. A substrate processing apparatus according to any of the preceding claims, wherein the substrate stack has an exhaust opening on the opposite side of the reaction chamber opening at the rear, and the height of the exhaust opening is equal to the height of the reaction chamber.

13. The substrate processing apparatus according to claim 12, wherein the shape of the exhaust opening is configured to adjust the gas conductance at various heights.

14. A substrate processing apparatus according to any of the preceding claims, comprising a flow limiting structure that provides different flow conductances depending on the height.

15. A substrate processing apparatus according to any of the preceding claims, configured to adjust the gas conductance in the exhaust opening by adjusting the shape of the exhaust opening based on the position of the exhaust pipe.

16. The substrate processing apparatus according to any of the preceding claims, wherein the exhaust opening is triangular, hourglass-shaped, rectangular, or has a perforated wall.

17. The substrate processing apparatus according to claim 1, configured to accommodate a substrate batch comprising 15 or more substrates, preferably 25 to 30 substrates.

18. A substrate processing apparatus according to any of the preceding claims, comprising a vertically movable substrate rotation system configured to move the substrate between a processing state and an loading / unloading state, and to rotate the substrate in a laminar flow within the reaction chamber.

19. The substrate processing apparatus according to any of the preceding claims, wherein the fluid distributor comprises a symmetrical throat.

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