Apparatus and method for adjusting the temperature of a plate

Abstract

Disclosed herein is a non-transient computer-readable medium for thermally adjusting chamber components. The non-transient computer-readable medium includes instructions that, when executed, perform a series of steps. The steps include sensing a first temperature of a chamber component in a semiconductor processing chamber, comparing the first temperature to a first setpoint of the chamber component, and adjusting the flow rate of a purge gas supplied to a portion of the processing chamber. The steps also include sensing a second temperature of a reflector component in a portion of the semiconductor processing chamber, comparing the second temperature of the reflector component to a second setpoint of the reflector component, and initiating a reflector cooling operation in the reflector component when the second temperature exceeds the second setpoint. The portion is at least partially physically isolated from the processing portion by a thermally permeable window.

Description

Technical Field

[0005] , ,

[0006] ,

[0001]

[0001] This disclosure relates to systems, apparatuses, and methods for monitoring the temperature of a plate for semiconductor manufacturing.

Background Art

[0006] In one or more embodiments, a non-transient computer-readable medium is provided for thermally adjusting chamber components. The non-transient computer-readable medium includes instructions that, when executed, perform a plurality of steps. The plurality of steps include sensing a first temperature of a chamber component in a semiconductor processing chamber, comparing the first temperature to a first setpoint of the chamber component, and adjusting the purge gas flow rate of a purge gas supplied to a portion of the semiconductor processing chamber. The plurality of steps include sensing a second temperature of a reflector component in a portion of the semiconductor processing chamber, comparing the second temperature of the reflector component to a second setpoint of the reflector component, and initiating a reflector cooling operation in the reflector component when the second temperature exceeds the second setpoint. The portion is at least partially physically isolated from the processing portion by a thermally permeable window.

[0007]

[0007] In one or more embodiments, a non-transient computer-readable medium is provided for thermally adjusting an isolation plate. The non-transient computer-readable medium includes instructions that, when executed, perform a plurality of steps. The plurality of steps include sensing the temperature of the isolation plate in the semiconductor processing chamber, comparing the sensed temperature to a setpoint of the isolation plate, and adjusting the flow rate of a cooling purge gas supplied to the isolated portion of the upper space between the thermal permeable window and the isolation plate. The plurality of steps also include adjusting the flow rate of a purge gas supplied to the portion of the semiconductor processing chamber that is at least partially physically isolated from the isolated portion by the thermal permeable window.

[0008]

[0008] In one or more embodiments, a system applicable to semiconductor manufacturing is provided for processing a substrate. The system includes a chamber body including one or more side walls, a lid, a reflector component supported by the lid, one or more sensor devices disposed within the reflector component, and a window having one or more side walls. The window and the lid define at least partially an internal space. The system includes one or more heat sources configured to heat the internal space, a substrate support disposed within the internal space, an isolation plate disposed within the internal space between the substrate support and the window, and a controller which includes commands, and when such commands are executed, the controller performs a plurality of steps. The plurality of steps include sensing a first temperature of the isolation plate, comparing the first temperature to a first setpoint of the isolation plate, and adjusting the flow rate of purge gas supplied to a portion of the chamber body at least partially physically isolated from the internal space by the window. The steps include sensing a second temperature of a reflector component in the chamber body, comparing the second temperature of the reflector component with a second setpoint of the reflector component, and initiating a reflector cooling operation in the reflector component when the second temperature exceeds the second setpoint.

[0009]

[0009] To enable a more detailed understanding of the features of the present disclosure described above, a more specific description of the present disclosure, which has been briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the present disclosure, and other equally valid embodiments are also permissible. [Brief explanation of the drawing]

[0010] [Figure 1]

[0010] This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. [Figure 2]

[0011] This is a schematic enlarged view of the processing chamber shown in Figure 1, according to one or more embodiments. [Figure 3]

[0012] This is a schematic partial diagram of a system including the processing chamber shown in Figure 1, according to one or more embodiments. [Figure 4A]

[0013] This is a schematic diagram of a transmittance profile graph according to one or more embodiments. [Figure 4B]

[0014] This is a schematic diagram of a transmittance profile graph according to one or more embodiments. [Figure 5]

[0015] This is a schematic block diagram of a substrate processing method according to one or more embodiments. [Figure 6A]

[0016] This chart shows empirical data for the method of Figure 5 according to one or more embodiments. [Figure 6B]

[0017] This chart shows the changes in empirical data for the method of Figure 5 according to one or more embodiments. [Modes for carrying out the invention]

[0011]

[0018] For ease of understanding, the same reference numerals have been used to indicate identical elements common to multiple figures, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0012]

[0019] This disclosure relates to a system, apparatus, and method for controlling the temperature of components (e.g., plates) for semiconductor manufacturing.

[0013]

[0020] This disclosure assumes that terms such as “couples,” “coupling,” “couple,” and “coupled” may include, but are not limited to, fastenings such as welding, fusion bonding, fused bonding, interlocking, and / or the use of bolts, screws, pins, and / or threads. This disclosure assumes that terms such as “couples,” “coupling,” “coupled,” and “coupled” may include, but are not limited to, forming a single unit. This disclosure assumes that terms such as “couples,” “coupling,” “coupled,” and “coupled” may include, but are not limited to, direct and / or indirect connections (e.g., indirect connections via components such as links, blocks, and / or frames).

[0014]

[0021] Figure 1 is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a crossflow of precursor over the upper surface 150 of the substrate 102. The processing chamber 100 is shown in Figure 1 in a processing state.

[0015]

[0022] The processing chamber 100 includes an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. The upper body 156 is in fluid communication with one or more purge gas inlets P (e.g., multiple purge gas inlets) and one or more gas exhaust outlets 128. One or more purge gas inlets 176 are shown to be positioned on the opposite side of one or more gas exhaust outlets 128, but the arrangement of one or more purge gas inlets 176 and one or more gas exhaust outlets 128 is assumed to be strategically positioned for an ideal flow path. The flow of purge gas in the upper heat source module 155 is represented by P3, described below. The chamber body contains a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. In one or more embodiments, the upper heat sources 141 include upper lamps, and the lower heat sources 143 include lower lamps. This disclosure assumes that other heat sources may be used (in addition to or instead of lamps) for the various heat sources described herein. For example, resistance heaters, light-emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein. Furthermore, the arrangement of lamps in Figure 1 is for visual representation only and may be located in areas according to other measures comprising the upper heat source module 155 and / or the lower heat source module 145.

[0016]

[0023] A substrate support 106 is positioned between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a susceptor. Other substrate supports (e.g., including substrate carriers and / or one or more ring segments supporting one or more outer regions of the substrate 102) are also assumed by this disclosure. A plurality of upper heat sources 141 are positioned between the upper window and the lid 154. The plurality of upper heat sources 141 form a portion of the upper heat source module 155. The lid 154 includes a support configured to suspend a reflector 127, which is positioned inside or on it and houses a plurality of sensor devices 196, 197, 198 configured to measure the temperature(s) inside the processing chamber 100. The sensor devices 196, 197, 198, and 199 can be placed on or inside the lid 154, indicated by a height H (relative to the top surface 150 of the substrate 102). However, as shown in Figure 1, by placing the sensor devices 196, 197, and 198 inside the reflector 127, the sensor devices 196, 197, and 198 can be closer to the sensing target, facilitating accurate measurement. In one or more embodiments, the sensor devices 196, 197, and 198 are placed in the reflector 127 to position the sensors at a height H'. The height H may be approximately 370 mm to approximately 410 mm, for example, approximately 380 mm to approximately 400 mm, for example, 390 mm. The height H' may be approximately 200 mm to approximately 240 mm, for example, approximately 210 mm to approximately 230 mm, for example, 220 mm. By positioning the sensor devices 196, 197, and 198 within the reflector 127, the difference between height H and height H' is approximately 150 mm to approximately 190 mm, for example, approximately 160 mm to approximately 180 mm, for example, approximately 170 mm. In one or more embodiments, one or more sensor devices 199 monitor the temperature of the reflector 127. The reflector 127 includes a cooling line 130 within the reflector 127 to facilitate reflector cooling operation that prevents the temperatures of the multiple sensor devices 196, 197, and 198 from overheating.In one or more embodiments, the cooling line follows a meandering pattern within a channel 126 embedded in the surface of a reflector configured to surround the bases of a plurality of sensor devices 196, 197, 198. In one or more embodiments, the channel 126 may be an open channel including a concave groove having a bottom surface and two side walls. In one or more embodiments, the channel 126 may be machined into the inner surface of the reflector 127. In one or more embodiments, the channel 126 may be an embedded containment channel. For example, the channel 126 may be located within one or more hollow tubes embedded in the reflector 127. The reflector cooling operation may be a continuous, pulsed, and / or timed flow of a cooling fluid, such as water, a refrigerant, or another cooling medium (e.g., a cooling flush), through the cooling lines 130, 131. Furthermore, the cooling lines 130, 131 help stabilize the temperature profile of the reflector 127 to below approximately 50°C, which can facilitate less thermal fluctuation and less production waste due to unstable processing. The cooling line inlet 130 and cooling line outlet 131 are in fluid communication with the cooling source 133 and the waste disposal area 137. The lower sensor device 195 is configured to measure the temperature 100. In one or more embodiments, each sensor device 195, 196, 197, 198, 199 is a pyrometer. In one or more embodiments, each sensor device 195, 196, 197, 198, 199 is an optical sensor device such as an optical pyrometer. The disclosure assumes that sensors other than pyrometers may be used. Each sensor device 195, 196, 197, 198, 199 is a single-wavelength sensor device or a multi-wavelength (e.g., two-wavelength) sensor device. The lower sensor device 195 is positioned adjacent to the floor 152.

[0017]

[0024] In one or more embodiments, the process chamber 100 includes one, two, or three of the five indicated sensor devices 195, 196, 197, 198, and 199.

[0018]

[0025] In one or more embodiments, process chamber 100 includes one or more additional sensor devices in addition to sensor devices 195, 196, 197, 198. In one or more embodiments, process chamber 100 may include sensor devices disposed at locations and / or in orientations different from those of the illustrated sensor devices 195, 196, 197, 198, 199. For example, one or more of sensor devices 195, 196, 197, 198, 199 may be disposed within or on lid 154 and / or within or on reflector 127.

[0019]

[0026] A plurality of lower heat sources 143 are disposed between lower window 110 and floor 152. The plurality of lower heat sources 143 form a part of lower heat source module 145. Upper window 108 is an upper dome and / or is formed of an energy transmissive (e.g., heat transmissive) material such as quartz. In one or more embodiments, upper window 108 physically separates at least partially the upper portion of process chamber 100 (where upper heat source module 155 is disposed) from the isolated portion 136b of upper space 136. Lower window 110 is a lower dome and / or is formed of an energy transmissive (e.g., heat transmissive) material such as quartz.

[0020]

[0027] Upper space 136 and purge space 138 are formed between upper window 108 and lower window 110. Upper space 136 and purge space 138 are part of an internal space at least partially defined by upper window 108, lower window 110, and one or more liners 111, 163.

[0021] <…>

[0028] Inside the internal space, a substrate support 106 is disposed. The substrate support 106 includes an upper surface, and a substrate 102 is disposed on this upper surface. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the upper space 136.

[0022]

[0029] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are each sized to accommodate lift pins 132 for raising the substrate 102 from the substrate support 106 before or after the deposition process is performed. The lift pins 132 may be placed on a lift pin stopper 134 when the substrate support 106 is lowered from the processing position to the transfer position. The lift pin stopper 134 may include a plurality of arms 139 attached to a shaft 135.

[0023]

[0030] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164, and one or more gas exhaust outlets 116. The one or more gas inlets 114 and one or more purge gas inlets 164 are located on the opposite side of the flow module 112 from the one or more gas exhaust outlets 116. A preheating ring 117 is located below the one or more gas inlets 114 and one or more gas exhaust outlets 116. The preheating ring 117 is located above the one or more purge gas inlets 164. One or more liners 111, 163 are located on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and purge gas inlets 164 are positioned parallel to the upper surface 150 of the substrate 102 located in the upper space 136, to allow the flow of one or more process gases P1 and one or more purge gases P2, respectively. The gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases P2, P3 supplied using one or more purge gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), air, and / or nitrogen (N2)). In one or more embodiments, the air used in one or more purge gas sources 162 may include dry air, saturated air, or saturated air between dry air and saturated air, such as ambient air or room air.Furthermore, the temperature(s) of one or more purge gas sources 162 and / or one or more purge gases P2 and / or P3 can be reduced by directing one or more purge gases P2 and / or P3 to one or more coolers 129 to provide purging of excess heat in the upper 136b or upper heat source module 155. In one or more embodiments, one or more purge gases P2 and / or P3 may be supplied by a variable speed blower ("VSB"). The VSB may be used as one or more of the one or more purge gas sources 162. One or more cleaning gases supplied using one or more cleaning gas sources 153 may contain one or both of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 may contain silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases may contain hydrofluoric acid (HCl).

[0024]

[0031] One or more gas exhaust outlets 116, 128 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly communicates one or more gas exhaust outlets 116, 128 with an exhaust pump 157. The exhaust system 178 can assist in controlling the deposition of layers on the substrate 102. The exhaust system 178 is located on the opposite side of the processing chamber 100 from the flow module 112.

[0025]

[0032] The processing chamber 100 includes a plate 171 (e.g., an isolation plate) having a first surface 172 and a second surface 173 facing the first surface 172. In one or more embodiments, the plate 171 is part of a flow guide structure. The second surface 173 faces the substrate support 106. The processing chamber 100 includes one or more liners 111, 163. The upper liner 163 includes an annular section 181 and one or more ledges 182 extending inward relative to the annular section 181. The one or more ledges 182 are configured to support one or more outer regions of the second surface 173 of the plate 171. The upper liner 163 includes one or more inlet openings 183 and one or more outlet openings 185. In one or more embodiments, the plate 171 is disc-shaped and the annular section 181 is ring-shaped. The plate 171 may be rectangular. The plate 171 divides the upper space 136 between the substrate support 106 and the upper window 108 into a lower section 136a and an upper section 136b. The lower section 136a is the processing section, and the upper section 136b is the isolation section. In one or more embodiments, the plate 171 is an isolation plate that physically isolates the isolation section (e.g., the upper section 136b) at least partially from the lower section 136a.

[0026]

[0033] The flow module 112 (which may be at least part of the side wall of the processing chamber 100) includes one or more gas inlets 114 that are fluidly connected to the lower part 136a. The flow module 112 includes one or more second gas inlets 175 that are fluidly connected to the upper part 136b. The one or more gas inlets 114 are fluidly connected to one or more flow gaps between the upper liner 163 and the lower liner 111. The one or more second gas inlets 175 are fluidly connected to one or more inlet openings 183 of the upper liner 163.

[0027]

[0034] During the deposition operation (e.g., epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114 and through one or more gaps to flow over the substrate 102 to the lower part 136a. During the deposition operation, one or more purge gases P2 flow through one or more second gas inlets 175 and through one or more inlet openings 183 of the lower liner 111 to the upper part 136b. Also during the deposition operation, one or more purge gases P3 flow through one or more purge gas inlets 176 to the upper heat source module 155. One or more purge gases P2, P3 may flow simultaneously with the flow of one or more process gases P1. By flowing one or more purge gases P3 through the upper heat source module 155, the upper heat source module 155 can easily purge excess heat generated from the multiple upper heat sources 141 or from the epitaxial growth operation, thereby maintaining the desired temperature profile of the upper heat source module 155, the upper window 108, and / or the plate 171. For example, there is an indirect temperature effect on the plate 171, as described later. The flow of one or more purge gases P2 through the upper 136b facilitates the reduction or prevention of the flow of one or more process gases P1 into the upper 136b that would contaminate the upper 136b. The one or more purge gases P2 can be directed towards one or more coolers 129 to lower the temperature of the one or more purge gases P2 and purge excess heat in the upper 136b, thereby facilitating the reduction or prevention of the inflow of one or more process gases P1 into the upper 136b, which would otherwise contaminate the upper 136b, and can also provide a cooling effect on the plate 171, as described later.

[0028]

[0035] One or more process gases P1 are exhausted through the gap between the upper liner 163 and the lower liner 111 and through one or more gas exhaust outlets 116. One or more purge gases P2 are exhausted through one or more outlet openings 185 and the same gap between the upper liner 163 and the lower liner 111 and through the same one or more gas exhaust outlets 116 as the one or more process gases P1. The disclosure assumes that one or more purge gases P2 may be exhausted separately through one or more second gas exhaust outlets separate from the one or more gas exhaust outlets 116.

[0029]

[0036] The disclosure also assumes that one or more purge gases P2 may be supplied to the purge space 138 (through one or more purge gas inlets 164) during the loading operation and may be exhausted from the purge space 138.

[0030]

[0037] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114 and through one or more gaps (between the upper liner 163 and the lower liner 111) to the lower section 136a. During the cleaning operation, one or more cleaning gases also flow simultaneously through one or more second gas inlets 175 and through one or more inlet openings 183 of the upper liner 163 to the upper section 136b. The disclosure assumes that one or more cleaning gases used to clean surfaces adjacent to the upper section 136b may be the same as or different from the one or more cleaning gases used to clean surfaces adjacent to the lower section 136a.

[0031]

[0038] The processing chamber 100 facilitates the separation of the gas supplied to the lower part 136a from the gas supplied to the upper part 136b, which promotes parameter adjustability. Furthermore, one or more purge gases and one or more washing gases can be separately supplied to the upper part 136b to promote the reduction of contamination of the upper window 108 and / or plate 171.

[0032]

[0039] As shown, the controller 190 is used to communicate with the processing chamber 100 and to control the process and method (such as the steps of the method described herein).

[0033]

[0040] The controller 190 is configured to receive data or input as sensor readings from a plurality of sensors. The sensors may include, for example, a sensor that monitors the growth of one or more layers on the substrate 102; a sensor that monitors the growth or residue on the inner surfaces of the chamber components of the processing chamber 100 (e.g., the inner surfaces of plate 171 and / or one or more liners 111, 163); and / or a sensor that monitors the temperature of the substrate 102, substrate support 106, plate 171, and / or liners 111, 163. The controller 190 has or communicates with a system model of the processing chamber 100. The system model includes a heating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (e.g., gas flow rate, gas pressure, processing temperature, rotational position of one or more components, heating profile, and / or cleaning state) through deposition and / or cleaning operations. The controller 190 is further configured to store readings and calculated values. The readings and calculated values ​​include previous sensor readings, such as any previous sensor readings within the processing chamber 100. The readings and calculated values ​​further include stored calculated values ​​after the sensor readings have been measured by the controller 190 and processed through the system model. Therefore, the controller 190 is configured not only to retrieve the stored readings and calculated values, but also to store them for future use. By maintaining previous readings and calculated values, the controller 190 can adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0034]

[0041] The controller 190 can monitor, estimate optimized parameters, adjust purge gas flow rate, adjust cooling purge gas flow rate, initiate reflector cooling operation, generate warnings on the display, stop the deposition operation, initiate a chamber rest period, delay subsequent iterations of the deposition operation, initiate a cleaning operation, detect the cleaning status of the plate 171, stop the cleaning operation, adjust heating power, and / or adjust the process recipe in other ways.

[0035]

[0042] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuits 192 for the CPU 193. The controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicably connected to a dedicated controller, and the controller 190 functions as a central controller.

[0036]

[0043] The controller 190 is any form of general-purpose computer processor used in industrial settings to control various board processing chambers and devices, and subprocessors located on or within them. Memory 191, or non-temporary computer-readable media, is one or more of readily available memory (e.g., random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disks, hard disks, flash drives, or any other form of local or remote digital storage. The support circuitry 192 of the controller 190 is connected to the CPU 193 to support the CPU 193. The support circuitry 192 includes cache, power supply, clock circuitry, input / output circuitry, and subsystems. Operating parameters (e.g., temperature of reflector 127, temperature of plate 171) are also included. The first setpoint of plate 171, the second setpoint of reflector 127, purge gas flow rate, cooling purge gas flow rate, process gas P1 pressure, processing temperature, heating profile, process gas P1 flow rate, cleaning gas pressure, cleaning gas flow rate, and / or rotational position of substrate support 106) and operation are stored in memory 191 as software routines that are executed or called to make controller 190 a purpose-specific controller in order to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the steps described herein. When the instructions stored in memory are executed, they cause one or more steps of method 500 (described below) related to processing chamber 100 to be performed. Controller 190 and processing chamber 100 are at least part of a system for processing substrates.

[0037]

[0044] The various processes described herein (such as the process of Method 500) can be performed automatically using the controller 190, or they can be performed automatically or manually using specific processes performed by the user.

[0038]

[0045] In one or more embodiments, the controller 190 includes a large-capacity storage device, an input control unit, and a display unit. The controller 190 monitors the temperature of the substrate 102, the temperature of the substrate support 106, the temperature of the plate 171, the process gas flow, and / or the purge gas flow. In one or more embodiments, the controller 190 includes multiple controllers 190, and as a result, the stored readings and calculated values ​​and the system model are stored in a controller separate from the controller 190 that controls the operation of the processing chamber 100. In one or more embodiments, the system model, stored readings, and calculated values ​​are all stored within the controller 190.

[0039]

[0046] Controller 190 is configured to control sensor devices 195, 196, 197, 198, 199, deposition, washing, rotational position, heating, and process gas and purge gas flow paths before entering and passing through the process chamber 100, and additional coolers and heaters control the gas flow and motion assembly 121 by providing output to the control of the heat sources. Such control includes control for sensor devices 195, 196, 197, 198, upper heat source 141, lower heat source 143, process gas source 151, purge gas source 162, cooler 129, motion assembly 121, control for directing the gas flow path, and control for exhaust pump 157.

[0040]

[0047] The controller 190 is configured to adjust the output to control based on sensor readings, a system model, and stored readings and calculated values. The controller 190 includes built-in software and compensation algorithms for calibrating the measured values. The controller 190 may include one or more machine learning algorithms and / or artificial intelligence algorithms for estimating optimized parameters for the deposition and / or cleaning operations (e.g., adjustment of deposition operation (e.g., process recipe), adjustment of purge gas flow rate, adjustment of cooling purge gas flow rate, initiation of reflector cooling operation, stopping of deposition operation, initiation of chamber rest period, delay of subsequent deposition operation iterations, initiation of cleaning operation, stopping of cleaning operation, adjustment of heating power, and / or adjustment of cleaning operation). Optimized parameters may include, for example, a predetermined temperature of plate 171 to initiate a purge gas cycle to remove excess heat generated from the process in order to adjust the temperature of plate 171.

[0041]

[0048] One or more machine learning algorithms and / or artificial intelligence algorithms may implement, adjust, and / or improve one or more of the algorithms, inputs, outputs, or variables described above. Additionally or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms may rank or prioritize certain aspects of adjustments to process chamber 100 and / or method 500 compared to other aspects of process chamber 100 and / or method 500. One or more machine learning algorithms and / or artificial intelligence algorithms may consider other changes in the processing system, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms may consider upstream or downstream changes that may occur in the processing system due to variable changes in process chamber 100 and / or method 500. For example, if variable "A" is adjusted to cause a change in aspect "B" of the process, and such adjustment unintentionally causes a change in aspect "C" of the process, one or more machine learning algorithms and / or artificial intelligence algorithms may consider such change in aspect "C". In such embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to the implementation of the process chamber 100 and / or method 500. These predictive aspects can be used to proactively mitigate unintended changes within the processing system.

[0042]

[0049] One or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate optimized parameters. The algorithms may be unsupervised or supervised. One or more machine learning algorithms and / or artificial intelligence algorithms may optimize, for example, the heating power applied to the heat sources 141 and 143, the washing recipe, and / or the processing recipe. One or more machine learning algorithms and / or artificial intelligence algorithms may optimize, for example, the temperature of the reflector 127, the temperature of the plate 171, the first setpoint of the plate 171, the second setpoint of the reflector 127, the purge gas flow rate, the cooling purge gas flow rate, the time to start the washing operation, and / or the time to start the deposition operation.

[0043]

[0050] In one or more embodiments, the controller 190 automatically performs the operations described herein without using one or more machine learning algorithms or artificial intelligence algorithms. In one or more embodiments, the controller 190 compares the measured values ​​with data in a lookup table and / or library to determine whether to perform a purge gas flow rate and / or a cooling purge gas flow rate and / or a reflector cooling operation. The controller 190 can store the measured values ​​as data in the lookup table and / or library.

[0044]

[0051] Figure 2 is a schematic enlarged view of the processing chamber 100 shown in Figure 1, according to one or more embodiments. The substrate support 106 has an upper surface 161 (e.g., a support surface) and a lower surface 169.

[0045]

[0052] Figure 2 also shows a plurality of temperature measurement sites 249-Q, 249-S, 253-Q, 253-R, 253-S, 255-Q, 255-S, 256-Q, 256-R, and 256-S. For example, in one or more embodiments, a lower sensor device 195 (shown in Figure 1) is configured to measure the temperature of site 249-Q (e.g., the central peripheral region of the lower window 110) and / or site 249-S (e.g., the central peripheral region of the lower surface 169 of the substrate support 106). In one or more embodiments, a first upper sensor device 196 (shown in Figure 1) is configured to measure the temperature of site 255-Q (e.g., the central region of the plate 171) and / or site 255-S (e.g., the central region of the substrate 102 and / or the central region of the upper surface 161 of the substrate support 106). In one or more embodiments, a second upper sensor device 197 (shown in Figure 1) is configured to measure the temperature of site 253-Q (e.g., the outer peripheral region of the upper window 108), site 253-R (e.g., the outer peripheral region of the plate 171), and / or site 253-S (e.g., the outer peripheral region of the substrate 102 and / or the outer peripheral region of the upper surface 161 of the substrate support 106). In one or more embodiments, a third upper sensor device 198 (shown in Figure 1) is configured to measure the temperature of site 256-Q (e.g., the outer peripheral region of the upper window 108), site 256-R (e.g., the outer peripheral region of the plate 171), and / or site 256-S (e.g., the outer peripheral region of the substrate 102 and / or the outer peripheral region of the upper surface 161 of the substrate support 106). The sensor devices 195, 196, 197, and 198 may be positioned and / or oriented in ways different from those shown in Figures 1 and 2, but it is still possible to measure the temperature of sites on plate 171, sites on one or both of the windows (e.g., upper window 108 and / or lower window 110), and / or one of the surfaces of substrate support 106 (e.g., top surface 161 and / or bottom surface 169), and / or sites on substrate 102. Each of the sensor devices 195, 196, 197, and 198 may be adapted to detect energies (e.g., radiation such as light) in two or more (e.g., three or more) different wavelength ranges.For example, in one or more embodiments, two or three wavelength ranges of the upper sensor devices 196, 197, 198 are selected such that (1) the plate 171 is absorptive (e.g., about 2.48 microns to about 2.98 microns, e.g., about 2.7 microns), (2) the substrate support 106 and / or substrate 102 is absorptive (e.g., about 3.17 microns to about 3.67 microns, e.g., about 3.4 microns), and (3) the upper window 108 and / or lower window 110 is absorptive (e.g., about 4.75 microns to about 5.25 microns, e.g., about 5.0 microns).

[0046]

[0053] Temperature measurements taken by sensor devices 195, 196, 197, and 198 can be used to monitor the temperatures of components within the process chamber 100 (e.g., the temperature of plate 171). For example, the difference in temperature measurements can be used by controller 190 to adjust the temperatures of plate 171, upper window 108, and / or lower window 110 by initiating and / or adjusting the flow of purge gas or cooling purge gas to areas necessary for temperature control of the chamber components.

[0047]

[0054] Figure 3 is a schematic partial diagram of a system including the processing chamber 100 shown in Figure 1, according to one or more embodiments. A sensor device 300 is positioned between the plate 171 and the upper window 108. The sensor device 300 may be used instead of one or more of the sensor devices 195, 196, 197, and 198 shown in Figure 1.

[0048]

[0055] The sensor device 300 includes an eyepiece 301 mounted on a sensor housing 302. The sensor device 300 includes a first optical sensor 305 configured to detect energy having a first wavelength of less than 4.0 microns, and a second optical sensor 306 configured to detect energy having a second wavelength of less than the first wavelength. The optical sensors 305, 306 are located within the sensor housing 302. In one or more embodiments, the first wavelength is in the range of about 3.17 microns to about 3.67 microns, for example, about 3.3 microns to about 3.5 microns. In one or more embodiments, the first wavelength is about 3.4 microns. In one or more embodiments, the second wavelength is in the range of about 2.48 microns to about 2.98 microns, for example, about 2.6 microns to about 2.8 microns. In one or more embodiments, the second wavelength is about 2.7 microns.

[0049]

[0056] The sensor device 300 includes a first optical emitter 307 configured to emit a first beam 311 (e.g., a ray) toward a first area of ​​the substrate support 106 (and / or substrate 102). The sensor device 300 also includes a second optical emitter 308 configured to emit a second beam 312 (e.g., a ray) toward a second area of ​​the plate 171. The second area of ​​the second beam 312 overlaps with the first area of ​​the first beam 311 by at least 80% of the first area. The second area overlaps with the first area, for example, along a perpendicular direction from the substrate support 106 toward the plate 171. An eyepiece 301 is configured to collect the reflective portions of the beams 311, 312, and optical sensors 305, 306 are configured to measure the intensity of the reflective portions of the beams 311, 312 having first and second wavelengths, respectively.

[0050]

[0057] The upper window 108 contains first quartz, and the plate 171 contains second quartz. The first quartz has a first hydroxyl group concentration of less than 100 ppm. In one or more embodiments, the first hydroxyl group concentration is 30 ppm or less, for example, in the range of about 5 ppm to about 30 ppm. The second quartz has a second hydroxyl group concentration of 750 ppm or more. In one or more embodiments, the second hydroxyl group concentration is 900 ppm or more. In one or more embodiments, the upper window 108 is formed of first quartz, and the plate 171 is formed of second quartz. Other windows (one or more), such as the lower window 110, may contain first quartz. For example, the lower window 110 may be formed of first quartz. The use of first and second quartz facilitates accurate and efficient measurement of the temperature of the plate 171 and the substrate support 106 (and / or substrate 102) during processing. For example, a plate 171 having a higher second hydroxyl group concentration facilitates accurate and efficient measurement of the temperature of the plate 171 using a second wavelength. The hydroxyl group concentration may be influenced, for example, by the water content and / or contamination content in each of the first or second quartz. A higher hydroxyl group concentration in the second quartz results in lower energy transfer with the second wavelength. A higher hydroxyl group concentration in the second quartz results in higher energy transfer with the first wavelength. In one or more embodiments, the second quartz is synthetic quartz, for example, quartz formed using a soot process. In one or more embodiments, the first quartz is fused quartz, such as electrofused quartz. The first and / or second quartz may be other quartz materials (e.g., flame-fused quartz).

[0051]

[0058] The use of first and second quartz facilitates an improvement in the signal-to-noise ratio of the measurement. The use of first quartz reduces or eliminates thermal inhomogeneities affected by the temperature gradient of the upper window 108. For example, the gradient of hydroxyl group concentration across the diameter of the first quartz is reduced or eliminated to facilitate improved heating uniformity. As described herein, hydroxyl group concentration refers to parts per million (ppm) measurements of hydroxyl groups (e.g., groups containing oxygen atoms covalently bonded to hydrogen atoms) in or on each quartz material. In one or more embodiments, the ppm measurement of hydroxyl group concentration is the concentration of the measured hydroxyl groups relative to all other materials present on the respective quartz surfaces of the first or second quartz (e.g., contaminants and / or quartz). In one or more embodiments, the measurement of hydroxyl group concentration is performed by X-ray photoelectron spectroscopy (XPS) and is provided in units of ppm. This disclosure assumes that other measurement techniques, such as glow discharge mass spectrometry (GDMS), may be used to measure the ppm value of hydroxyl group concentration.

[0052]

[0059] In one or more embodiments, the first quartz is transparent to the first and second wavelengths described herein. In one or more embodiments, the second quartz is transparent to the first wavelength and absorbent to the second wavelength. In one or more embodiments, the material of the substrate support 106 is absorbent to the first wavelength. The first quartz promotes reduced absorption and increased transmittance (for the first and second wavelengths), thereby reducing power consumption for heating. The first quartz may have a high infrared light transmittance (e.g., more than 5%) compared to other materials at a temperature of about 1000°C. The first quartz can facilitate power savings of more than 5kW per 100kW of power consumption, for example. The first quartz increases the heat lamp rate and facilitates improved throughput.

[0053]

[0060] In one or more embodiments, the first quartz is transparent to 75% or more (e.g., 80% or more) of the energy (e.g., light) having a second wavelength. In one or more embodiments, the second quartz is transparent to less than 5% (e.g., about 0%) of the energy (e.g., light) having a second wavelength. The first quartz is fused quartz, such as electrofused quartz. The second quartz is synthetic quartz, such as quartz formed using a soot process.

[0054]

[0061] The sensor device 300 is shown as a multi-wavelength (e.g., two-wavelength) sensor device. The disclosure assumes that a first optical sensor 305 may be located in a first sensor housing of the first sensor device, a first optical emitter 307 may be mounted in the first sensor housing, a second optical sensor 306 may be located in a second sensor housing of the second sensor device, and a second optical emitter 308 may be mounted in the second sensor housing. A first eyepiece may be mounted in the first sensor housing, and a second eyepiece may be mounted in the second sensor housing. The first and second sensor housings are positioned relative to each other such that the first optical beam 311 overlaps with the second optical beam 312 by at least 80% (as described above).

[0055]

[0062] In addition to, or instead of, sensor device 300, sensor device 350 is positioned above plate 171 and upper window 108. Sensor device 350 may be used instead of one or more of sensor devices 195, 196, 197, and 198 shown in Figure 1. Sensor device 350 includes a third optical sensor 351 configured to detect energy having a third wavelength greater than a first wavelength. The optical sensor 351 is positioned within sensor housing 302. In one or more embodiments, the third wavelength is in the range of about 4.75 microns to about 5.25 microns, for example, about 4.9 microns to about 5.1 microns. In one or more embodiments, the third wavelength is about 5.0 microns.

[0056]

[0063] The sensor device 350 includes a third optical emitter 352 configured to emit a third beam 353 (e.g., a ray) toward a third area of ​​the upper window 108. The sensor device 350 also includes a first optical emitter 307 and a second optical emitter 308. In one or more embodiments, the third area of ​​the third beam 353 overlaps with the first area of ​​the first beam 311 by at least 80% of the first area. The third area overlaps with the first area, for example, along a vertical direction from the substrate support 106 toward the upper window 108. The eyepiece 301 is configured to collect the reflective portions of the beams 311, 312, and 353, and the optical sensors 305, 306, and 351 are configured to measure the intensity of the reflective portions of the beams 311, 312, and 353 having first, second, and third wavelengths, respectively. The temperature profile of the upper window 108 can be determined by measuring the third beam 353 using the third wavelength. The lower the hydroxyl group concentration of the third quartz, the lower the transfer of energy having the third wavelength. In one or more embodiments, the first quartz is absorbent for the third wavelength. In one or more embodiments, the first quartz is transmittance to less than 5% (e.g., about 0%) of the energy (e.g., light) having the third wavelength.

[0057]

[0064] Sensor device 350 is shown as a multi-wavelength (e.g., three-wavelength) sensor device. The disclosure assumes that a first optical sensor 305 may be located in a first sensor housing of the first sensor device, a first optical emitter 307 may be mounted in the first sensor housing, a second optical sensor 306 may be located in a second sensor housing of the second sensor device, a second optical emitter 308 may be mounted in the second sensor housing, a third optical sensor 351 may be located in a third sensor housing of the third sensor device, and a third optical emitter 352 may be mounted in the third sensor housing. A first eyepiece may be mounted in the first sensor housing, a second eyepiece may be mounted in the second sensor housing, and a third eyepiece may be mounted in the third sensor housing. The first sensor housing, the second sensor housing, and the third sensor housing are positioned relative to each other such that the first light beam 311 overlaps with the second light beam 312 by at least 80% (as described above), and the third light beam 353 overlaps with the first light beam 311 by at least 80% (as described above).

[0058]

[0065] Figure 4A is a schematic diagram of graphs of transmittance profiles 451-453 according to one or more embodiments. Transmittance profiles 451-453 are shown over multiple wavelengths. Line 451 is an exemplary transmittance profile of the upper window 108. Line 453 is an exemplary transmittance profile of the plate 171. Energy having the first wavelength W1 (e.g., as described above as a range) can pass through both the upper window 108 and the plate 171 to reach the substrate 102 and / or substrate support 106. At the first wavelength W1, both the upper window 108 and the plate 171 have relatively high transmittance (e.g., 80% or more).

[0059]

[0066] As indicated by the second wavelength W2 (for example, as described above as a range), energy having the second wavelength W2 may be transmitted through the upper window 108 and absorbed and / or reflected by the plate 171. At the second wavelength W1, the upper window 108 has a relatively high transmittance (e.g., 80% or more), and the plate 171 has a relatively low transmittance (e.g., less than 80%, e.g. less than 50%, less than 20%, or less than 10%, e.g. less than 5%, e.g., about 0%).

[0060]

[0067] Figure 4B is a schematic diagram of graphs of transmittance profiles 471-473 according to one or more embodiments. Transmittance profiles 471-473 are shown over multiple wavelengths. Line 471 is an exemplary transmittance profile of the first quartz as described above. Line 472 is an exemplary transmittance profile of the second quartz as described above. Line 473 is an exemplary transmittance profile of the third quartz. As shown at a wavelength of approximately 2.73 microns (e.g., the second wavelength range described above), line 471 has a transmittance of 75% or more (e.g., 80% or more). Line 472 has a transmittance of less than 5% (e.g., approximately 0%). Line 473 has a transmittance in the range of 55%-70%. Line 471 is for fused quartz formed using electromelting. Line 472 is for synthetic quartz formed using a soot process. Line 473 is for fused quartz formed using flame melting.

[0061]

[0068] As shown at a wavelength of approximately 2.73 microns, the first line 471 (e.g., for the upper window 108) has relatively high transmittance, while the second line 473 (e.g., for the plate 171) has relatively low transmittance.

[0062]

[0069] Figure 5 illustrates a temperature control method 500, comprising several operations for controlling the temperature of a chamber component (e.g., plate 171 in Figure 1), according to one or more embodiments. Step 510 is a temperature sensing (e.g., monitoring) process. Step 520 is a method for adjusting the temperature of the chamber component. Step 530 is a method for determining whether a target temperature has been achieved. The following discussion of Figure 5 will utilize the reference figures in Figure 1.

[0063]

[0070] As described above, temperature monitoring and control of chamber components (e.g., plate 171) is difficult because the chamber components may be exposed to various temperature gradients from multiple heat sources or cooling sources. For example, the epitaxial growth deposition process may generate heat from multiple upper heat sources 141 within the upper heat source module 155 such that the base of each upper heat source 141 (e.g., the lamp base to which a lamp bulb is attached) is heated to a base temperature of 350°C or less. This disclosure assumes that the base temperature may be lower, for example, below about 50°C. This heat can overheat the reflector 127 and the housed device. However, the temperature of the reflector 127, as measured by the optical device 199, can initiate a cooling cycle operation of the reflector 127 to maintain the integrity of the optical device, creating a cooling zone within the upper heat source module 155 and maintaining the reflector 127 at a temperature below about 50°C. As described later, the temperature of the upper heat source module 155 can be increased by reducing the air purge provided from one or more purge gas sources 162, such as a VSB. In one or more embodiments, as described later, cooling of the upper heat source module 155 may be achieved, for example, by increasing the air purge provided from one or more purge gas sources 162, such as a VSB. In one or more embodiments, as described later, a cooling purge gas is used to cool the upper heat source module 155.

[0064]

[0071] These dynamic temperature gradients can affect the temperature monitoring and control of the chamber components. For example, heat from within the upper heat source module 155 is radiated through the upper window 108, affecting the temperature of, for example, the substrate support 106 and / or the substrate 102. As another example, heat from the substrate support 106 and / or the substrate 102 can be transferred (e.g., radiated) to the plate 171. The temperature of the plate 171 affects (and / or is affected by) the temperature gradient in the space between the substrate support 106 and the plate 171, thereby affecting the epitaxial growth deposition on the substrate 102. The temperature of the plate 171 can be adjusted (e.g., indirectly) by adjusting the temperature of the upper window 108 and / or the substrate support 106. The temperature of the upper window 108 and / or the substrate support 106 can be adjusted over a temperature range. Adjusting the temperature of the plate 171 promotes the deposition growth rate of the substrate 102 and / or the deposition uniformity from the center to the edge of the substrate 102. For example, adjusting the temperature gradient extending from the substrate support 106 to the plate 171 can facilitate improved deposition uniformity from the center to the edge of the substrate 102. This disclosure assumes that the temperature of the plate 171 can be adjusted while substantially maintaining the temperature of the substrate support 106 throughout the processing cycle.

[0065]

[0072] Step 510 is a temperature sensing process that utilizes the aforementioned sensor devices 300, 350, and / or 196, 197, 198 to obtain an accurate measurement of the temperature of a chamber component (e.g., plate 171). The acquired temperature value is stored, compared with previously collected parameters, and / or step 520 may be initiated. In one or more embodiments, step 510 includes comparing a first temperature of the chamber component with a first setpoint of the chamber component.

[0066]

[0073] Step 520 is a method for adjusting the temperature of a chamber component (e.g., plate 171). Temperature adjustment of the chamber component can be performed by methods such as gradually purging the upper heat source module 155 with air to remove excess heat generation, raising and lowering the heating substrate support 106, adding heaters, and / or using cooled purge gas in a desired area. For example, the temperature of plate 171 can be adjusted indirectly.

[0067]

[0074] The variable speed blower ("VSB") provides an airflow path (represented as the purge, P3 in Figure 1) that provides a back pressure of up to approximately 2 kilopascals (kPa) within the upper heat source module 155. It should be understood that reducing the back pressure improves the cooling effect (and vice versa), so the distribution of air can be optimized to cool other chamber components. For example, the VSB allows for a gradual decrease in airflow (i.e., an increase in back pressure) to reduce air throughput within the upper heat source module 155 while maintaining adequate air throughput to, for example, the upper 136b and / or purge space 138. For example, the heat generated during epitaxial growth operation indirectly heats the upper window 108, reaching a plate temperature of up to approximately 600°C when the VSB flow rate is 100%. Similarly, in one or more embodiments, the heat generated during epitaxial growth operation reaches a plate temperature of up to approximately 575°C when the VSB flow rate is 75%. In one or more embodiments, the heat generated during the epitaxial growth operation reaches a maximum temperature of approximately 550°C for plate 171 when the VSB flow rate is 50%. In one or more embodiments, the heat generated during the epitaxial growth operation reaches a maximum temperature of approximately 545°C for plate 171 when the VSB flow rate is 25%. It has been found that by gradually reducing the VSB flow rate in 25% increments, the temperature of the substrate 102 can be changed by 15°C, and the temperature of plate 171 can be clearly adjusted or controlled within a range of 50°C, while reducing fluctuations in the processing temperature of the substrate 102. In one or more embodiments, the VSB can be reduced in increments smaller than 25 percent, such as in increments of approximately 10 percent, 5 percent, or 1 percent. By gradually increasing the VSB flow rate, the temperature of the chamber components (e.g., plate 171) can be effectively cooled. In other words, heating of the upper heat source module 155 can be performed by gradually reducing the airflow, and similarly, cooling of the upper heat source module 155 can be performed by gradually increasing the reduced airflow.

[0068]

[0075] In addition to purging the upper heat source module 155 in stages as described above, the substrate support 106 may be adjusted to further influence the temperature radiation to the chamber components (e.g., plate 171) using the process-heated substrate support 106. In one or more embodiments, the substrate support 106 may include an embedded heater. To establish a benchmark for the staged purging of the upper heat source module 155, the substrate support 106 may be moved up and down to achieve the same substrate support 106 temperature of approximately 675°C while simultaneously performing the staged purging. Such embodiments facilitate achieving the target temperature of the chamber components by utilizing both the staged air purging of the upper heat source module 155 and the up and down movement of the substrate support 106.

[0069]

[0076] In one or more embodiments, additional heaters 146a, 146b are positioned above the upper window 108 and within the upper heat source module 155 to further heat the upper heat source module 155 and the upper window to a maximum of approximately 750°C to approximately 800°C. In one or more embodiments, each of the additional heaters 146a, 146b includes electrodes embedded in a silicon carbide (SiC) structure. In one or more embodiments, the heaters 146a, 146b are integrated rings configured to radiate thermal energy downward to heat the upper window 108. The heaters 146a, 146b can be two independent heaters or integrated as a single heater, such as a single complete ring. In one or more embodiments, the additional heaters 146a, 146b are positioned circumferentially around the sleeve section of the reflector 127. In one or more embodiments, the heater(s) 146a, 146b may be ceramic heater(s), such as silicon carbide heaters, and may have variable temperature control to facilitate further adjustment of the chamber component(s) temperature (e.g., plate(s) 171). The heater(s) 146a, 146b raise the temperature of the upper heat source module(s) 155, indirectly heating the upper window(s) 108, indirectly heating the upper(s) 136b, and indirectly heating the plate(s) 171 to the target temperature. Thus, it is understood that the temperature of the chamber component(s) (e.g., plate(s) 171) can be adjusted (e.g., indirectly adjusted) by expanding the temperature control range of the window.

[0070]

[0077] The temperature of the chamber components (e.g., plate 171) can be further reduced by selectively purging the upper section 136b with a cooling purge gas. This can be done simultaneously with or after the VSB flow rate reaches full flow at 100% flow rate. The purge gas may be an inert gas or air supplied from one or more purge gas sources 162. One or more coolers 129 may be used to provide a low-temperature gas to the upper section 136b of the flow path represented by P2 in Figure 1. Cooling of the upper section 136b cools the plate 171 by convective heat transfer. It should be understood that the temperature adjustment of plate 171 using stepwise air purging of the upper heat source module 155, moving the substrate support 106 up and down, using additional heaters within the upper heat source module 155, and / or using cooling gas purging by the upper section 136b can be used simultaneously, in combination, sequentially, and / or in any operating sequence to adjust the temperature of the chamber components (e.g., plate 171).

[0071]

[0078] Steps 525a, b, and c are optional method steps for achieving a target temperature of the reflector 127. An optional method step may be performed by sensing the temperature of the reflector 127 in the upper heat source module 155 with one or more sensor devices 199 (i.e., step 525a), comparing the second temperature of the reflector 127 to a second setpoint (e.g., a desired target reflector temperature) (i.e., step 525b), and initiating a cooling operation of the reflector 127 in the reflector 127 when the second temperature exceeds the second setpoint (step 525c).

[0072]

[0079] Step 530 is a method for determining whether a target temperature has been achieved. Temperatures measured using sensor devices 300, 350, and / or 195, 196, 197, 198, 199 can be compared to the target temperature. If the desired temperature is not achieved, the steps of method 500 may be repeated until the desired temperature of the plate 171 is achieved. For example, the controller 190 may be programmed with a first setpoint (e.g., "desired temperature") for the temperature of a chamber component (e.g., plate 171), and compares the first setpoint with the first temperature measured in step 510. Any discrepancy is calculated by the controller 190, and the controller 190 begins adjusting the chamber component temperature by any method described in step 520. If the first setpoint does not match or exceeds the first setpoint, method 500 is repeated.

[0073]

[0080] Figure 6A shows temperatures empirically achieved by a stepwise reduction of the VSB flow rate for heating the plate 171 in one or more embodiments. As shown, by adjusting the substrate support 106 to approximately 675°C and further reducing the VSB flow rate in three steps from 100% to 25%, the plate 171 was able to reach approximately 600°C.

[0074]

[0081] Figure 6B shows the change in temperature control range due to the stepwise airflow described above. As shown, with the adjustment of the substrate support 106 and the four-stage airflow, the temperature control range of the plate 171 was within 50°C. The temperature control range of the upper window 108 was within 150°C, and the temperature control range of the substrate 102 was within 15°C.

[0075]

[0082] The advantages of this disclosure include accurate, rapid, efficient, and automatic detection and adjustment of the temperature of the substrate support 106 (and / or substrate 102), the temperature of the plate 171, and / or the temperature of the reflector 127; the adjustability of parameters (e.g., temperature, gas flow path, gas flow rate, and / or gas pressure) across various operating conditions (e.g., low rotational speed, high pressure, and / or low flow rate); a wider and / or more modular range of adjustability; and improved deposition uniformity. The advantages of this disclosure also include reduced chamber footprint, reduced or eliminated contamination of chamber components, improved component lifespan, reduced chamber downtime, and improved throughput. The advantages of this disclosure also include improved deposition reproducibility.

[0076]

[0083] As an example, embodiments of the present disclosure are modular and can be used across a variety of processing (e.g., deposition) operations and / or cleaning operations (including those with a variety of operating parameters).

[0077]

[0084] It is assumed that one or more aspects of the disclosures herein may be combined. For example, one or more aspects, features, components, operations, and / or characteristics of the processing chamber 100, controller 190, one or more sensor devices 195, 196, 197, 198, 199, sensor device 300 and / or sensor device 350, profiles in Figures 4A and 4B, method 500, and / or temperature data shown in Figures 6A and 6B may be combined. For example, the steps and / or parameters described in relation to Figures 1-4B and / or Figures 6A-6B can be combined with the steps and / or parameters of method 500. Furthermore, it is assumed that one or more aspects of the disclosures herein may include some or all of the aforementioned benefits.

[0078]

[0085] While the above applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the following claims.

Claims

1. A non-temporary computer-readable medium that includes instructions for thermally adjusting chamber components, wherein, when the instructions are executed, a plurality of steps are performed, To sense the first temperature of the chamber components within the semiconductor processing chamber, The first temperature is compared with the first set point of the chamber component, Adjusting the flow rate of the purge gas supplied to a portion of the semiconductor processing chamber, wherein the portion is at least partially physically isolated from the processing portion by a heat-permeable window. To sense the second temperature of the reflector component of the portion of the semiconductor processing chamber, The second temperature of the reflector component is compared with the second set point of the reflector component, When the second temperature exceeds the second set point, the reflector cooling operation in the reflector component is initiated. Non-temporary computer-readable media, including [specific examples of such media].

2. The non-temporary computer-readable medium according to claim 1, wherein the purge gas is air.

3. The non-temporary computer-readable medium according to claim 1, wherein the purge gas flow rate is adjusted in steps using a variable-speed blower.

4. The non-temporary computer-readable medium according to claim 3, wherein the stepwise adjustment of the purge gas flow rate is 25 percent.

5. The non-temporary computer-readable medium according to claim 1, further comprising heating the portion of the semiconductor processing chamber using a heater located inside it.

6. The non-temporary computer-readable medium according to claim 5, wherein the heater is a ceramic heater.

7. The non-temporary computer-readable medium according to claim 5, wherein the heater is a silicon carbide-containing heater.

8. The non-temporary computer-readable medium according to claim 1, further comprising adjusting the position of the substrate support by raising and lowering the substrate support.

9. The non-temporary computer-readable medium according to claim 1, wherein the chamber component is an isolation plate positioned to at least partially fluidly isolate the processing portion from an isolated portion above the processing portion.

10. The non-temporary computer-readable medium according to claim 1, wherein sensing the second temperature of the reflector component of the portion of the semiconductor processing chamber is performed by a sensor device located on the chamber lid, and the reflector component is configured to support a plurality of second sensor devices.

11. The non-temporary computer-readable medium according to claim 10, wherein each of the plurality of second sensor devices is configured to sense one or more wavelengths and is configured to be positioned about 200 mm to about 240 mm from the top surface of the substrate.

12. The non-temporary computer-readable medium according to claim 1, wherein the reflector cooling operation is a cooling flash that maintains the second temperature below 50°C.

13. A non-temporary computer-readable medium, which includes an instruction to thermally adjust an isolation plate, wherein when the instruction is executed, it performs a plurality of steps, and the plurality of steps are To sense the temperature of the isolation plate in the semiconductor processing chamber, The sensed temperature is compared with the set point of the isolation plate, Adjusting the flow rate of the cooling purge gas supplied to the isolated portion of the upper space between the heat-permeable window and the isolation plate, Adjusting the flow rate of the purge gas supplied to the portion of the semiconductor processing chamber that is at least partially physically isolated from the isolated portion by the heat-permeable window. Non-temporary computer-readable media, including [specific examples of such media].

14. The non-temporary computer-readable medium according to claim 13, wherein sensing the temperature of the isolation plate in the semiconductor processing chamber is performed by a plurality of sensor devices.

15. The non-temporary computer-readable medium according to claim 14, wherein the plurality of sensor devices are supported by reflector components disposed within the portion of the semiconductor processing chamber.

16. The non-temporary computer-readable medium according to claim 14, wherein the plurality of steps further include arranging the plurality of sensor devices about 200 mm to about 240 mm from the top surface of the substrate.

17. A system for processing substrates, applicable to semiconductor manufacturing, wherein the system is A chamber body having one or more side walls, Lid and, A reflector component supported by the lid, One or more sensor devices arranged within the reflector component, A window wherein the one or more side walls, the window, and the lid define at least partially the interior space, One or more heat sources configured to heat the internal space, A substrate support arranged within the aforementioned internal space, A separation plate is disposed in the internal space between the substrate support and the window, A controller that includes instructions, and when the instructions are executed, performs a plurality of steps, To sense the first temperature of the isolation plate, The first temperature is compared with the first set point of the isolation plate, To adjust the flow rate of the purge gas supplied to the portion of the chamber body that is at least partially physically isolated from the internal space by the window, To sense the second temperature of the reflector component of the portion of the chamber body, The second temperature of the reflector component is compared with the second set point of the reflector component, When the second temperature exceeds the second set point, the reflector cooling operation in the reflector component is initiated. Including controllers and A system equipped with these features.

18. The system according to claim 17, wherein each of the one or more sensor devices is configured to sense one or more wavelengths and is configured to be positioned about 200 mm to about 240 mm from the top surface of the substrate.

19. The system according to claim 17, further comprising a heater disposed within the portion of the chamber body.

20. The system according to claim 17, further comprising a variable-speed blower connected to one or more of the aforementioned side walls.

Images