Ultraviolet-emitting semiconductor chip and ultraviolet-emitting semiconductor light-emitting device equipped therewith

Abstract

This disclosure relates to an ultraviolet light-emitting semiconductor chip comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, each comprising a first semiconductor region, a second semiconductor region, and an active region interposed between the first and second semiconductor regions and emitting ultraviolet light through electron-hole recombination, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and a first electrode provided in the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and electrically connected to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region, wherein when the first electrode and the second electrode are viewed from above, they form a closed loop shape surrounding the mesa region so as to block moisture and gas, and an ultraviolet light-emitting semiconductor light-emitting element equipped therewith.

Description

Technical Field

[0001] The present disclosure relates generally to an ultraviolet light emitting semiconductor chip and a semiconductor light emitting device including the same, and more particularly to an ultraviolet light emitting semiconductor chip capable of protecting a semiconductor chip from external gases including moisture and air, and a semiconductor light emitting device including the same. Here, the ultraviolet light emitting semiconductor chip means a semiconductor optical device that generates ultraviolet light (emission peak wavelength is 400 nm or less, particularly 300 nm or less) through recombination of electrons and holes, and can be made of a group III nitride semiconductor (Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x + y≦1)).

Background Art

[0002] Here, background art related to the present disclosure is provided, which is not necessarily prior art.

[0003] Figure 1 shows an example of an ultraviolet light-emitting semiconductor light-emitting device presented in Korean Patent Publication No. 10-2347997, the light-emitting device comprising a support substrate 100 and an ultraviolet light-emitting semiconductor chip 20. The support substrate 100 has via holes 100 and a reflective wall 300 formed thereon. Conductive portions or conductive layers 500 electrically connected to the semiconductor chip 20 are formed in the via holes 100, and a transparent cover 400 is attached to the reflective wall 300 via adhesive 410. An additional sealant 700 is formed in the space formed by the reflective wall 300 and the transparent cover 400, and the sealant 700 protects the semiconductor chip 20 from moisture and / or gases such as oxygen that can penetrate into the space despite the presence of the transparent cover 400. Unexplained reference numeral "600" is solder, which is used to bond the support substrate 100 and the semiconductor chip 200.

[0004] Figures 2 and 3 illustrate an example of a method for manufacturing an ultraviolet light-emitting semiconductor light-emitting element as presented in U.S. Patent Publication No. US11,824,148. As shown in Figure 2, a semiconductor chip 20 is mounted on a support substrate 24, and then a solid lens material 4 made of thermoplastic resin is placed on top of it. Next, as shown in Figure 3, the lens material 4 is formed into a lens or sealant 22 of a desired shape by thermal curing. Unexplained reference numeral "242" is a conductive part or conductive layer, and "243" is a protective layer that functions as a stopper for the lens material 4 during the thermal curing process. This configuration (i.e., unlike the light-emitting element shown in Figure 1, the reflective wall 300 and the transparent cover 400 are omitted) makes it possible to reduce the light loss of about 10-15% that occurs when light generated by the semiconductor chip 20 is emitted to the outside of the light-emitting element through the space between the reflective wall 300 and the cover material 400 and the transparent cover 400 (e.g., quartz, sapphire), and also eliminates the difficult process of attaching the transparent cover 400 to the reflective wall 300.

[0005] However, a more reliable means is needed to prevent moisture and / or gases such as oxygen from penetrating the semiconductor chip 20, which could be fatal to the performance of the semiconductor chip 20. [Overview of the project] [Problems that the invention aims to solve]

[0006] The specific details for implementing the invention will be described later. [Means for solving the problem]

[0007] This section provides a general summary of the disclosure and is not intended to be understood as limiting the scope of the disclosure or all of its features.

[0008] According to one aspect of the present disclosure, an ultraviolet light-emitting semiconductor chip is provided, comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, the plurality of semiconductor regions comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region, which emits ultraviolet light through the recombination of electrons and holes, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region; a first electrode provided on the exposed first semiconductor region, which is electrically connected to the first semiconductor region; and a second electrode electrically connected to the second semiconductor region, wherein the first electrode blocks moisture and gas, and when viewed from above, the first electrode and the second electrode have a closed-loop shape surrounding the mesa region.

[0009] According to yet another aspect of the present disclosure, an ultraviolet light-emitting semiconductor chip is provided, comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, each comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first and second semiconductor regions and emitting ultraviolet light through electron-hole recombination, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region; a first electrode provided on the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and electrically connected to the first semiconductor region; a second electrode electrically connected to the second semiconductor region; and a barrier wall having a closed-loop shape, with the outer casing of the first electrode surrounding the mesa region when viewed from above, so as to block moisture and gas.

[0010] According to yet another aspect of the present disclosure, an ultraviolet light-emitting semiconductor light-emitting device comprising a semiconductor chip according to the present disclosure is provided, comprising a support substrate coupled to the semiconductor chip, wherein a first electrode and a second electrode are coupled to the support substrate so as to face the support substrate, and the support substrate comprises a first conductive portion coupled to the first electrode and a second conductive portion coupled to the second electrode.

[0011] According to another aspect of the present (Disclosure) A UV-emitting semiconductor chip is provided, comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, the plurality of semiconductor regions comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region, which emits ultraviolet light through the recombination of electrons and holes, wherein a mesa region is formed by removing a part of the second semiconductor region, the active region, and the first semiconductor region; an insulating layer surrounding the mesa region; a first electrode penetrating the insulating layer and electrically communicating with the first semiconductor region, and having a first bonding layer on the insulating layer; a second electrode penetrating the insulating layer and electrically communicating with the second semiconductor region, and having a second bonding layer on the insulating layer; and one of the first and second electrodes surrounding the remaining electrode in a closed loop, with the one electrode forming the closed loop protecting the active region that emits ultraviolet light from moisture and harmful gases together with the insulating layer. [Effects of the Invention]

[0012] The specific details for implementing the invention will be described later. [Brief explanation of the drawing]

[0013] [Figure 1] This figure shows an example of an ultraviolet light-emitting semiconductor light-emitting device presented in Korean Patent Publication No. 10-2347997.

[0014] [Figure 2] This figure shows an example of a method for manufacturing an ultraviolet light-emitting semiconductor light-emitting device, as presented in U.S. Patent Publication No. US11,824,148. [Figure 3] This figure shows an example of a method for manufacturing an ultraviolet light-emitting semiconductor light-emitting device, as presented in U.S. Patent Publication No. US11,824,148.

[0015] [Figure 4] It is a diagram showing an example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device including the same according to the present disclosure. [Figure 5] It is a diagram showing an example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device including the same according to the present disclosure. [Figure 6] It is a diagram showing an example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device including the same according to the present disclosure. [Figure 7] It is a diagram showing an example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device including the same according to the present disclosure.

[0016] [Figure 8] It is a diagram showing yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure.

[0017] [Figure 9] It is a diagram showing yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure.

[0018] [Figure 10] It is a diagram showing yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure. [Figure 11] It is a diagram showing yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure.

[0019] [Figure 12] It is a diagram showing another example of a support substrate according to the present disclosure. [Figure 13] It is a diagram showing another example of a support substrate according to the present disclosure. >

[0020] [Figure 14] It is a diagram showing another example of a support substrate according to the present disclosure.

[0021] [Figure 15] It is a diagram showing yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure.

[0022] [Figure 16]This figure shows yet another example of an ultraviolet light-emitting semiconductor chip as disclosed herein.

[0023] [Figure 17] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device comprising the same, as disclosed herein.

[0024] [Figure 18] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device comprising the same, as disclosed herein.

[0025] [Figure 19] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device comprising the same, as disclosed herein.

[0026] [Figure 20] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device comprising the same, as disclosed herein.

[0027] [Figure 21] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip as disclosed herein. [Figure 22] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip as disclosed herein. [Figure 23] This figure shows yet another example of an ultraviolet light-emitting semiconductor chip as disclosed herein. [Modes for carrying out the invention]

[0028] The present disclosure will now be described in detail with reference to the accompanying drawing(s).

[0029] Figures 4 to 7 show examples of ultraviolet light-emitting semiconductor chips and semiconductor light-emitting devices equipped therewith according to the present disclosure, wherein the semiconductor light-emitting device comprises a semiconductor chip 20 and a support substrate or carrier 24, and may further comprise a lens or encapsulant 22 as needed. In the presented example, the semiconductor chip 20 and the support substrate 24 are shown separately for illustrative purposes, but in reality they are coupled together, and soldering, paste, etc., may be used for such coupling.

[0030] As shown in Figure 5, the semiconductor chip 20 comprises a translucent substrate 1 (e.g., a growth substrate made of sapphire), a first semiconductor region 2 (e.g., an n-type group 3 nitride semiconductor), an active region 3 (a quantum well structure made of a group 3 nitride semiconductor), a second semiconductor region 5 (e.g., a p-type group 3 nitride semiconductor), a first electrode 6 that is in electrical contact with the first semiconductor region 2, and a second electrode 7 that is in electrical contact with the second semiconductor region 5. The active region 3 is interposed between the first semiconductor region 2 and the second semiconductor region 5 and emits ultraviolet light through electron-hole recombination using the current supplied via the first electrode 6 and the second electrode 7. The first electrode 6 is located on the first semiconductor region 2a exposed around the mesa region M formed by removing the second semiconductor region 5, the active region 3, and a portion of the first semiconductor region 2 via etching, and the second electrode 7 is formed over almost the entire upper surface of the second semiconductor region 5 and functions as a reflective film so that light generated in the active region 3 is emitted through the translucent substrate 1. A buffer region (not shown) for the growth of high-quality semiconductor regions 2, 3, and 5 is typically provided between the translucent substrate 1 and the first semiconductor region 2.

[0031] Figure 6 is a plan view of the semiconductor chip 20 as seen from the side where electrodes 6 and 7 are located. The first electrode 6 is formed in a manner that surrounds the mesa region M at a distance from it, while forming a closed-loop on the first semiconductor region 2, i.e., the exposed first semiconductor region 2a. Through this configuration, the mesa region M where the active region 3 (see Figure 4) is located is completely isolated from the outside while coupled to the support substrate 24. Therefore, moisture, water, and / or harmful gases (chlorine, sulfur, oxygen, air, etc.) from the outside are less likely to flow in, allowing the semiconductor chip 20 or semiconductor light-emitting element to operate stably. The first electrode 6 and the second electrode 7 can be formed separately, and photolithography and metal deposition processes can be used in each process.

[0032] Returning to Figure 4, the support substrate or carrier 24 has three conductive parts 242a, 242b, and 242c with respect to the cross-sectional view, and each of the three conductive parts 242a, 242b, and 242c may have an upper pad 242a-1, 242b-1, and 242c-1 that is directly joined to the first electrode 6 and the second electrode 7, a lower pad 242a-2, 242b-2, and 242c-2 that is connected to an external power supply, and a connecting part 242a-3, 242b-3, and 242c-3 that penetrates the support substrate 24 and connects them, and although undesirable, the upper pads and / or lower pads may be omitted. When the first electrode 6 has a closed-loop shape, the two conductive parts 242a and 242b are formed integrally, in which case one of the two connecting parts 242a-3 and 242b-3 may be omitted, and the lower pads 242a-2 and 242b-2 may be maintained as they are. It is also possible that the lower pad 242a-2 or 242b-2, with the connecting part 242a-3 or 242b-3 omitted, may be connected to the lower pad 242c-2.

[0033] Furthermore, by providing a lens or sealant 22, the protection of the semiconductor chip 20 from moisture and gases can be made clearer. When forming the lens 22 using the techniques shown in Figures 2 and 3, as shown in Figure 7, the two conductive parts 242a and 242b that are joined to the first electrode 6 are integrally formed and have a single closed-loop shape (e.g., a hollow circle with a square interior), which allows them to function as a stopper during the thermal curing process of the lens 22. Unexplained reference numeral "24-1" indicates the upper surface of the support substrate 24.

[0034] The first electrode 6 can be made up of multiple layers of Ti, Cr, Al, Ni, TiN, W, Pt, Rh, Au, Sn, or solders containing Sn (AuSn, AgSn, CuSn, SnAgCu, NiSn, etc.), and the second electrode 7 can be made up of multiple layers of ITO, Ti, Cr, Al, Ni, TiN, W, Pt, Rh, Au, Sn, or solders containing Sn (AuSn, AgSn, CuSn, SnAgCu, NiSn, etc.). As shown in Figure 15, when the first electrode 6 is constructed as a multilayer (e.g., omic layer-bonding layer, omic layer-barrier layer-bonding layer), the omic layer 6-1 (shown as a dotted line) located on the lower side and making omic contact with the first semiconductor regions 2, 2a, and the bonding layer 6-2 which is bonded to the support substrate 25 can be constructed separately. In this case, it is sufficient to form only the bonding layer 6-2 in a closed-loop shape, and in the presented example, the bonding layer 6-2 is in contact with the first semiconductor regions 2, 2a and covers the entire omic layer 6-1.

[0035] Figure 8 shows yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure, in which the first semiconductor region 2 is removed and the upper surface 1a of the translucent substrate 1 is exposed, and the first electrode 6 is formed across the exposed first semiconductor region 2a and the upper surface 1a of the translucent substrate 1. Through this configuration, the first semiconductor region 2 is prevented from coming into contact with moisture and / or gas, while the coupling of the first electrode 6 with the semiconductor chip 20 can be made more reliable.

[0036] Figure 9 shows yet another example of the ultraviolet light-emitting semiconductor chip according to this disclosure, in which the second semiconductor region 5 and active region 3 on the edge side of the semiconductor chip 20 are left as they are during the process of exposing the first semiconductor region 2a (the process of forming the mesa region M (see Figure 5)), and the first electrode 6 is formed thereon. Through this configuration, the first electrode 6 and the second electrode 7 can be formed in a single step, and it is also easy to match the heights of the first electrode 6 and the second electrode 7.

[0037] Figures 10 and 11 illustrate yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure, in which a closed-loop barrier wall 8 (Wall) functioning as a penetration-preventing film is provided in a region 1a of the translucent substrate 1 that is exposed separately from the first electrode 6. In this case, the first electrode 6 may or may not have a closed-loop configuration (see Figure 11). When the first electrode 6 has a closed-loop configuration, the barrier against moisture and / or gas can be made more reliable. The barrier wall 8 may or may not be electrically isolated from the first electrode 6. The barrier wall 8 can be provided in the same process as the first electrode 6 and, since it does not function as an electrode, has the advantage of being able to be made only of a metal (etc.) that is effective in blocking moisture and / or gas, unlike the metal that constitutes the first electrode 6.

[0038] Figures 12 and 13 illustrate another example of a support substrate according to the present disclosure, where the support substrate 24 in Figure 12 corresponds to the semiconductor chip 20 presented in Figure 10 and has a closed-loop shaped (e.g., annular ring; see Figure 13) barrier wall coupling portion 244 that is coupled to the barrier wall 8. Preferably, the coupling portion 244 is composed of an upper pad 244-1, a lower pad 244-2, and a coupling portion 244-3 that penetrates the support substrate 24 and connects them, thereby further improving heat dissipation of the semiconductor chip 20 operating in a sealed space. Of course, it can also be composed of only the upper pad 244-1. The conductive portion 242a coupled to the first electrode 6 is electrically isolated from the barrier wall coupling portion 244 and formed within the barrier wall coupling portion 244. When a lens or sealant 22 is provided, the barrier wall coupling portion 244 also functions as a stopper for the lens material. Even when semiconductor chips 20 shown in Figures 5, 8, and 9, which do not have a barrier wall 8, are used, they can still be used as stoppers for lenses or sealants 22 by providing a barrier wall coupling portion 244 that is electrically separated from the conductive portions 242a and 242b.

[0039] Figure 14 shows another example of a support substrate according to this disclosure, in which a support substrate 24 corresponding to the semiconductor chip 20 presented in Figure 11 is shown. In this case, the conductive portion 242a coupled to the first electrode 6 does not form a closed loop.

[0040] Figure 16 shows yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure, in which the first electrode 6 is electrically connected to the first semiconductor regions 2, 2a with an insulating layer 9 interposed between the first electrode 6 and the mesa region M, and the first electrode 6 extends over the mesa region M. Similar to the first electrode 6 presented in Figure 15, the second electrode 7 separately comprises an omic layer 7-1 and a bonding layer 7-2, the omic layer 7-1 may be formed before or after the formation of the insulating layer 9. Of course, a barrier wall 8 (see Figure 10) may also be provided, and the barrier wall 8 may be formed on the exposed sapphire substrate 1a or the exposed first semiconductor region 2a.

[0041] Figure 17 shows yet another example of an ultraviolet light-emitting semiconductor chip and a semiconductor light-emitting device equipped therewith according to the present disclosure, in which the conductive portion 242 and the barrier wall coupling portion 244 are integrally formed. The first electrode 6 and the barrier wall 8 are coupled to the upper pads 242-1 and 244-1, and the lower pads 242-2 and 244-2 do not surround the lower pad 242c-2 (i.e., they are not closed-loop configurations), thereby providing versatility for electrical connection with commercial external substrates. The coupling portions 242-3 and 244-3 connect the upper pads 242-1 and 244-1 and the lower pads 242-2 and 244-2, and explanations of unexplained identical reference numerals are omitted. It goes without saying that the lens 22 may be omitted. It goes without saying that the upper pads 242-1 and 244-1 may not be integrally formed, but independently and electrically separated.

[0042] Figure 18 shows yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure, in which the positions of the first electrode 6 and the second electrode 7 are changed compared to the example presented in Figure 16. That is, the second electrode 7 surrounds the first electrode 6 while forming a closed loop. In the presented example, the first electrode 6 and the second electrode 7 are formed only on the upper part of the insulating layer 9, and the sides of the mesa region M are protected from moisture and / or harmful gases by the insulating layer 9. An omic layer 6-1 and an omic layer 7-1 are formed in the first semiconductor region 2 and the second semiconductor region 5, respectively, and the omic layer 6-1 and the bonding layer 6-2 are electrically connected by an electrical connector 6-3 provided in a via hole 6h formed in the insulating layer 9, and the omic layer 7-1 and the bonding layer 7-2 are electrically connected by an electrical connector 7-3 provided in a via hole 7h formed in the insulating layer 9. The omic layer 6-1, bonding layer 6-2, and electrical connector 6-3 constitute the first electrode 6, and the omic layer 7-1, bonding layer 7-2, and electrical connector 7-3 constitute the second electrode 7. Each of the electrical connectors 6-3 and 7-3 can be formed in via holes 6h and 7h, respectively, during the formation process of bonding layers 6-2 and 7-2.

[0043] Figure 19 shows yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure, which differs from the example presented in Figure 18 in that a second electrode 7, specifically the bonding layer 7-2 of the second electrode 7, is connected to the substrate 1. Of course, an omic layer 6-1 and / or omic layer 7-1 may be provided.

[0044] Figure 20 shows yet another example of an ultraviolet light-emitting semiconductor chip according to the present disclosure, in which a barrier wall 8 is formed in addition to the example presented in Figure 19.

[0045] Figures 21 to 23 show yet another example of an ultraviolet light-emitting semiconductor chip according to this disclosure, which has a similar configuration to the example presented in Figure 19, but with a change in the positions of the first electrode 6 and the second electrode 7. Figure 21 shows a top view of the device, Figure 22 shows a cross-sectional view along the BB line in Figure 21, and Figure 23 shows a cross-sectional view along the AA line in Figure 21. One or more via holes 6h are used for electrical connection or communication between the first electrode 6 (6-1, 6-2, 6-3) and the first semiconductor region 2 (2a). The mesa region M is completely covered with an insulating layer 9 and the first electrode 6 (6-2), protecting it from moisture and gas, and the first electrode 6 (6-2) is not electrically connected to the first semiconductor region 2 at the outer edge of the mesa region M. Of course, the outside of the mesa region M may have the configuration presented in Figure 16. When the semiconductor chip 20 is large, branch electrodes 6-4 may be provided to ensure a smooth current supply to the inside of the device. The branch electrodes 6-4 are narrow, long, and hanging electrodes that can be formed together with the omic layer 6-1 of the first electrode 6. In the presented example, the second electrode 7(7-2) is circular, and the first electrode 6(6-2) forms a circular hole at a distance from the second electrode 7(7-2), with branch electrodes 6-4 extending from each bonding layer 6ei located inside, and when viewed from above, the branch electrodes 6-4 extend down to below the second electrode 7-2. The second electrode 7, like the first electrode 6, is composed of an omic layer 7-1, a bonding layer 7-2, and one or more electrical connectors 7-3. The omic layer 7-1 is formed over almost the entire surface of the mesa region M on the second semiconductor region 5, and one or more electrical connectors 7-3 electrically connect the omic layer 7-1 and the bonding layer 7-2 within the circular hole formed by the first electrode 6 (6-2). Of course, depending on the size of the semiconductor chip 20, the bonding layer 6eo provided on the outside of the device may be omitted. Through this configuration, the device can be protected from moisture and gases via the insulating layer 9 and the first electrode 6 (6-2). Of course, a barrier wall 8 (see Figure 20) may also be provided.

[0046] Various embodiments of this disclosure will be described below.

[0047] (1) An ultraviolet light-emitting semiconductor chip comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, each comprising a first semiconductor region having a first conductivity, a second semiconductor region having a second conductivity different from the first conductivity, and an active region interposed between the first and second semiconductor regions and emitting ultraviolet light through electron-hole recombination, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and provided on the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, an electrode electrically connected to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region, wherein the first electrode blocks moisture and gas, and when viewed from above, the first electrode and the second electrode have a closed-loop shape surrounding the mesa region.

[0048] (2) A UV-emitting semiconductor chip in which a second semiconductor region, an active region, and a portion of the first semiconductor region have been removed to expose a translucent substrate, and the first electrode is formed across the exposed translucent substrate and the exposed first semiconductor region.

[0049] (3) An ultraviolet light-emitting semiconductor chip in which a second semiconductor region and a portion of the active region remain separated from the mesa region, and a first electrode is formed across the remaining portion and the exposed first semiconductor region.

[0050] (4) When the first electrode and the second electrode are viewed from above to block moisture and gas, the mesa region surrounds the closed-loop first electrode and further comprises a closed-loop barrier wall, which is an ultraviolet light-emitting semiconductor chip.

[0051] (5) An ultraviolet light-emitting semiconductor chip comprising an omic layer that makes omic contact with a first semiconductor region and a bonding layer located at the upper end, wherein the bonding layer has a closed-loop shape.

[0052] (6) An ultraviolet light-emitting semiconductor chip further comprising an insulating layer formed between the first electrode and a mesa region, wherein the first electrode has a closed-loop shape and extends on the insulating layer over the mesa region.

[0053] (7) An ultraviolet light-emitting semiconductor chip comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, each comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region, which emits ultraviolet light through the recombination of electrons and holes, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region; a first electrode provided in the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, which is electrically connected to the first semiconductor region; a second electrode electrically connected to the second semiconductor region; and a barrier wall having a closed-loop shape, with the outer casing of the first electrode surrounding the mesa region when the first electrode and the second electrode are viewed from above, so as to block moisture and gas.

[0054] (8) An ultraviolet light-emitting semiconductor light-emitting device comprising a semiconductor chip of the present disclosure, comprising a support substrate coupled to the semiconductor chip, wherein a first electrode and a second electrode are coupled to the support substrate, the support substrate comprising a first conductive portion coupled to the first electrode and a second conductive portion coupled to the second electrode.

[0055] (9) A UV-emitting semiconductor light-emitting element further comprising a lens formed on a support substrate while covering a semiconductor chip, wherein the first conductive portion has a closed-loop shape so as to function as a stopper that provides surface tension during the lens formation process.

[0056] (10) A semiconductor chip comprising an ultraviolet light-emitting semiconductor light-emitting element, wherein when the first electrode and the second electrode are viewed from above, the first electrode and the second electrode are positioned on the outer periphery of the first electrode, surrounding a mesa region, and having a closed-loop shape, and further comprising a closed-loop shape on the outer periphery of the first conductive part, which is coupled to the barrier wall.

[0057] (11) Further comprising a lens formed on a support substrate while covering a semiconductor chip, An ultraviolet light-emitting semiconductor light-emitting element that blocks moisture and gas through a closed-loop shaped barrier wall, a closed-loop shaped barrier wall joint, and a lens whose shape is determined by the barrier wall joint.

[0058] (12) A semiconductor chip comprising a first electrode and a second electrode, when viewed from above, a barrier wall having a closed loop shape that surrounds a mesa region and is located on the outer periphery of the first electrode, so as to block moisture and gas, and further comprising a barrier wall coupling portion having a closed loop shape on the outer periphery of the first conductive portion and coupling with the barrier wall, wherein the first conductive portion comprises an upper pad provided on the upper surface of a support substrate and coupling with the first electrode, a lower pad provided on the lower surface of a support substrate, and a connecting portion that penetrates the support substrate and connects the upper pad and the lower pad, and the lower pad of the first conductive portion and the lower pad of the barrier wall coupling portion are integrally formed without forming a closed loop.

[0059] (13) An ultraviolet light-emitting semiconductor light-emitting element in which the upper surface pad of the first conductive part and the upper surface pad of the barrier wall joint part are integrally formed while forming a closed loop.

[0060] (14) An ultraviolet light-emitting semiconductor light-emitting device comprising a translucent substrate and a plurality of semiconductor regions provided on the translucent substrate, each comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first and second semiconductor regions, which emits ultraviolet light through the recombination of electrons and holes, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region; an insulating layer surrounding the mesa region; a first electrode penetrating the insulating layer and electrically communicating with the first semiconductor region, and having a first bonding layer on the insulating layer; a second electrode penetrating the insulating layer and electrically communicating with the second semiconductor region, and having a second bonding layer on the insulating layer; and an ultraviolet light-emitting semiconductor chip wherein one of the first and second electrodes surrounds the remaining electrode in a closed loop, and the one electrode forming the closed loop protects the active region that emits ultraviolet light from moisture and harmful gases together with the insulating layer.

[0061] (15) A UV-emitting semiconductor chip in which one electrode forming a closed loop covers an insulating layer on the side of a mesa region.

[0062] (16) The remaining electrodes have an omic layer and one or more electrical connections connecting the omic layer and the bonding layer, and one electrode forming a closed loop has a hole inside at a distance from the remaining electrodes, and one or more electrical connections are located inside the hole of the electrode forming the closed loop, an ultraviolet light-emitting semiconductor chip.

[0063] (17) A UV-emitting semiconductor chip in which one electrode forming a closed loop comprises an omic layer and branch electrodes extending from the omic layer, the branch electrodes extending below the bonding layer of the remaining electrodes when viewed from above.

[0064] The ultraviolet light-emitting semiconductor chip and semiconductor light-emitting element comprising the same, as disclosed herein, make it possible to protect the semiconductor chip from external gases, including moisture and air.

[0065] Further ultraviolet light-emitting semiconductor chips and semiconductor light-emitting devices comprising them according to this disclosure can reduce the light loss that occurs when ultraviolet light passes through the space between the reflective wall and the transparent cover and through the transparent cover.

[0066] Further ultraviolet light-emitting semiconductor chips and semiconductor light-emitting devices comprising them as disclosed herein facilitate the supply of current to the device via the omic layer, while simultaneously blocking the inflow of gas and / or moisture using the bonding layer. In other words, despite the functional limitations of the bonding layer, the supply of current to the device becomes smooth.

Claims

1. In ultraviolet light-emitting semiconductor chips, Translucent substrate and, A plurality of semiconductor regions provided on a translucent substrate, each comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first and second semiconductor regions, which emits ultraviolet light through electron-hole recombination, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region. A first electrode is provided in the first semiconductor region, which is exposed after a second semiconductor region, an active region, and a portion of the first semiconductor region have been removed, and is electrically connected to the first semiconductor region, and A second electrode electrically connected to a second semiconductor region, Equipped with, An ultraviolet light-emitting semiconductor chip having a closed-loop shape surrounding a mesa region when viewed from above, with the first electrode blocking moisture and gas.

2. The second semiconductor region, the active region, and a portion of the first semiconductor region have been removed, exposing the translucent substrate. The ultraviolet light-emitting semiconductor chip according to claim 1, wherein the first electrode is formed across an exposed translucent substrate and an exposed first semiconductor region.

3. Separated from the mesa region, a second semiconductor region and a portion of the active region remain. The ultraviolet light-emitting semiconductor chip according to claim 1, wherein the first electrode is formed across the remaining portion and the exposed first semiconductor region.

4. The ultraviolet light-emitting semiconductor chip according to claim 1, wherein when the first electrode and the second electrode are viewed from above to block moisture and gas, the mesa region further comprises a closed-loop barrier wall surrounding the closed-loop first electrode.

5. The ultraviolet light-emitting semiconductor chip according to claim 1, wherein the first electrode comprises an omic layer that makes omic contact with the first semiconductor region and a bonding layer located at the upper end, and the bonding layer has a closed-loop shape.

6. The device further comprises an insulating layer formed between the first electrode and the mesa region. The ultraviolet light-emitting semiconductor chip according to claim 1, wherein the first electrode has a closed-loop shape and extends over a mesa region on an insulating layer.

7. In ultraviolet light-emitting semiconductor chips, Translucent substrate and, A plurality of semiconductor regions provided on a translucent substrate, each comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first and second semiconductor regions, which emits ultraviolet light through electron-hole recombination, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region. A first electrode is provided in the first semiconductor region, which is exposed after a second semiconductor region, an active region, and a portion of the first semiconductor region have been removed, and is electrically connected to the first semiconductor region. A second electrode electrically connected to a second semiconductor region, and, When the first and second electrodes are viewed from above to block moisture and gas, the outer casing of the first electrode surrounds the mesa region, forming a closed-loop barrier wall, A UV-emitting semiconductor chip equipped with this feature.

8. In an ultraviolet light-emitting semiconductor light-emitting element comprising one semiconductor chip from claims 1 to 7, A support substrate coupled to a semiconductor chip, comprising a support substrate to which a first electrode and a second electrode are coupled facing the support substrate, The support substrate comprises an ultraviolet light-emitting semiconductor light-emitting element having a first conductive portion coupled to a first electrode and a second conductive portion coupled to a second electrode.

9. The device further includes a lens formed on a support substrate while covering the semiconductor chip, The ultraviolet light-emitting semiconductor light-emitting element according to claim 8, wherein the first conductive portion has a closed-loop shape so as to function as a stopper that provides surface tension during the lens formation process.

10. The semiconductor chip has a barrier wall that, when viewed from above, surrounds the mesa region and is located on the outer periphery of the first electrode, and has a closed-loop shape, so as to block moisture and gas. The ultraviolet light-emitting semiconductor light-emitting element according to claim 8, further comprising a barrier wall coupling portion having a closed loop shape on the outer casing of the first conductive portion and coupling with a barrier wall.

11. The device further includes a lens formed on a support substrate while covering the semiconductor chip, The ultraviolet light-emitting semiconductor light-emitting element according to claim 10, which blocks moisture and gas through a closed-loop shaped barrier wall, a closed-loop shaped barrier wall coupling portion, and a lens whose shape is determined by the barrier wall coupling portion.

12. The semiconductor chip has a barrier wall that, when viewed from above, surrounds the mesa region and is located on the outer periphery of the first electrode, and has a closed-loop shape, so as to block moisture and gas. The outer casing of the first conductive part has a closed loop shape and further comprises a barrier wall coupling part that connects to a barrier wall, The first conductive part includes an upper pad provided on the upper surface of the support substrate and coupled with the first electrode, a lower pad provided on the lower surface of the support substrate, and a connecting part that penetrates the support substrate and connects the upper pad and the lower pad. The barrier wall coupling portion includes an upper pad provided on the upper surface of the support substrate and coupled with the barrier wall, a lower pad provided on the lower surface of the support substrate, and a connecting portion that penetrates the support substrate and connects the upper pad and the lower pad. The ultraviolet light-emitting semiconductor light-emitting element according to claim 8, wherein the lower surface pad of the first conductive portion and the lower surface pad of the barrier wall coupling portion are integrally formed without forming a closed loop.

13. The ultraviolet light-emitting semiconductor light-emitting element according to claim 12, wherein the upper surface pad of the first conductive portion and the upper surface pad of the barrier wall coupling portion are integrally formed while forming a closed loop.

14. In an ultraviolet light-emitting semiconductor light-emitting device, Translucent substrate and, A plurality of semiconductor regions provided on a translucent substrate, each comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first and second semiconductor regions, which emits ultraviolet light through electron-hole recombination, wherein a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region. An insulating layer surrounding the mesa region, A first electrode penetrates the insulating layer and is electrically in communication with the first semiconductor region, and has a first bonding layer on the insulating layer, A second electrode penetrates the insulating layer and is electrically in communication with a second semiconductor region, and has a second bonding layer on the insulating layer, An ultraviolet light-emitting semiconductor chip in which one of the first and second electrodes surrounds the other electrode in a closed loop, and the electrode forming the closed loop, together with an insulating layer, protects the active region that emits ultraviolet light from moisture and harmful gases.

15. The ultraviolet light-emitting semiconductor chip according to claim 14, wherein one electrode forming a closed loop covers an insulating layer on the side of a mesa region.

16. The remaining electrodes consist of an omic layer and one or more electrical connections connecting the omic layer and the bonding layer. One electrode forming a closed loop has a hole inside, spaced apart from the other electrodes. The ultraviolet light-emitting semiconductor chip according to claim 15, wherein one or more electrical connections are located inside a hole of one electrode that forms a closed loop.

17. One electrode forming a closed loop comprises an omic layer and branch electrodes extending from the omic layer. The ultraviolet light-emitting semiconductor chip according to claim 16, wherein the branch electrodes, when viewed from above, extend beneath the bonding layer of the remaining electrodes.

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