Multiport crossflow system

Abstract

A processing chamber and a port adapter are provided. The processing chamber includes a chamber body having a lid connected to a first end of the chamber body, a gas ring adjacent to the first end of the chamber body, and a substrate support, with a processing area defined between the substrate support and the lid. The processing chamber includes a port adapter connected to a second end of the chamber body. The port adapter includes a body defining a plurality of fluid-connected openings in the processing area, each opening spaced along the body such that the distance between adjacent openings is within approximately 20% of the average opening spacing distance, individually controllable valves fluid-connected to one or more of the openings, a system foreline, and an exhaust system fluid-connected to the plurality of openings.

Description

Technical Field

[0001] Cross-Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Patent Application No. 18 / 359,772, entitled "MULTI-PORT CROSS FLOW SYSTEM," filed on July 26, 2023, the entire content of which is hereby incorporated by reference herein.

[0002]

[0002] This technology relates to components and devices for semiconductor manufacturing. More specifically, this technology relates to components of a processing chamber and other semiconductor processing equipment.

Background Art

[0003]

[0003] Integrated circuits are realized by a process of manufacturing a complexly patterned material layer on a substrate surface. To manufacture a patterned material on a substrate, a controlled method for deposition, extension, and removal of the material is required. However, in new process designs, it may be difficult to manufacture a high-quality material layer. For example, after a deposition process, unwanted contaminants, such as unwanted deposits inside the chamber, may remain in the chamber body. Such contaminants can be cleaned through a cleaning gas (also referred to as an etchant gas, which can be, for example, a fluorine-containing gas such as nitrogen trifluoride) released into the chamber body during subsequent deposition steps. The cleaning gas can react with the contaminants and then be exhausted from the chamber body through an exhaust system. However, if the removal of the cleaning gas from the chamber body is inefficient, asymmetric cleaning occurs, and certain parts of the chamber body may remain contaminated even after the cleaning process is completed.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high-quality devices and structures. These and other needs are addressed by this technology.

Summary of the Invention

[0005]

[0005] The technology generally relates to processing chambers, port adapters, and substrate processing methods. In embodiments, the processing chamber includes a chamber body having a first end and a second end, a lid connected to the first end of the chamber body, a gas ring adjacent to the first end of the chamber body, a substrate support, and a port adapter system. The processing chamber includes a processing area defined between the substrate support and the lid. The port adapter includes a port adapter body connected to the second end of the chamber body and defining a plurality of fluid-connected openings in the processing area, individually controllable valves fluid-connected to one or more of the openings, a system foreline, and an exhaust system fluid-connected to the plurality of openings. The plurality of openings in the port adapter body are spaced apart along the port adapter body such that the distance between adjacent openings is within approximately 30% of the average opening spacing distance.

[0006]

[0006] In an embodiment, the processing chamber includes the arrangement of multiple openings spaced apart along an arc-shaped path such that the distance between each opening is approximately 100° to approximately 140°. In a further embodiment, the processing chamber includes the arrangement of multiple openings spaced apart along an arc-shaped path such that the distance between each opening is approximately 115° to approximately 125°. Furthermore, in an embodiment, the port adapter system is permanently or detachably fixed to a second end of the chamber body, or is integrally formed with the chamber body. In addition or alternatively, in an embodiment, each opening of the multiple openings is fluidly coupled to an exhaust system along a corresponding flow path, each flow path having a corresponding flow path length, and the first opening of the multiple openings has a first flow path to an exhaust system having a corresponding first flow path length that is different from the flow path lengths of one or more of the other openings of the multiple openings. In further embodiments, the first flow path length is longer than the flow path lengths of one or more other openings in the plurality of openings, and the first opening defines a diameter larger than the corresponding diameter of the other openings in the plurality of openings. In embodiments, the first flow path length is shorter than the flow path lengths of one or more other openings in the plurality of openings, and the diameter of the first opening is smaller than the corresponding diameter of the other openings in the plurality of openings. In embodiments, the processing chamber also includes a pipe system that includes one or more non-linear sections.

[0007]

[0007] The technology also generally includes a port adapter comprising an adapter body, individually controllable valves, and a plurality of pipe systems. The adapter body defines an inner surface, an outer surface, and a plurality of openings extending from the inner surface to the outer surface, wherein the distance between adjacent openings is within approximately 30% of the average opening spacing distance. The individually controllable valves are fluidly coupled to one or more of the plurality of openings. The first pipe system of the plurality of pipe systems includes a diameter and a total path length, and the diameter, total path length, or both the diameter and total path length differs from the second diameter, second total path length, or both the second diameter and second total path length of the second pipe system of the plurality of pipe systems.

[0008]

[0008] In the embodiment, each of the multiple openings is spaced along an arc-shaped path such that the distance between each opening is about 100° to about 140°. In a further embodiment, each of the multiple openings is spaced along an arc-shaped path such that the distance between each opening is about 115° to about 125°. In a further embodiment, each of the multiple openings is fluidly coupled to one of the multiple pipe systems, and each of the multiple pipe systems includes a flow path length between each opening and the end of each pipe system, and the first opening of the multiple openings is fluidly coupled to the first pipe system, and the first pipe system has a first flow path length that is different from the flow path lengths of one or more of the other openings of the multiple openings. Furthermore, in the embodiment, the first opening defines a diameter that is different from the diameters of the other openings of the multiple openings. In further embodiments, the first flow path length is longer than the flow path lengths of one or more of the other openings in the plurality of openings, and the first opening defines a diameter larger than the corresponding diameter of the other openings in the plurality of openings. In embodiments, the first flow path length is shorter than the flow path lengths of one or more of the other openings in the plurality of openings, and the diameter of the first opening is smaller than the corresponding diameter of the other openings in the plurality of openings.

[0009]

[0009] The technology also generally applies to substrate processing methods. The method includes introducing gas to a first end of the chamber body of a processing chamber, discharging the gas through a port adapter system connected to a second end of the chamber body, closing the first valves of a plurality of valves while keeping at least the second valves of a plurality of valves in an open configuration, and further removing gas from the chamber body through the port adapter system. The method includes the port adapter system having a port adapter body and a plurality of individually controllable valves fluidly coupled to a plurality of openings. The plurality of openings are fluidly coupled to the processing chamber and are spaced apart from each other along the port adapter.

[0010]

[0010] In embodiments, the method includes detecting residue and / or asymmetric flow paths before closing the first valve. Further embodiments, the method includes the port adapter system also including a plurality of pipe systems, where each pipe system of the plurality of pipe systems is fluidly connected to one of a plurality of openings, and further includes correcting one or more of the path length of the pipe system and the diameter of the pipe system based on the detection of asymmetric flow paths. In embodiments, the method includes reopening the first valve after removing the residue.

[0011]

[0011] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the drawings. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic diagram, viewed from above, showing a processing system according to an embodiment of this technology. [Figure 2A] This figure shows a high-density plasma chemical vapor deposition (HDP-CVD) system according to one or more embodiments. [Figure 2B] Figure 2A is a cross-sectional view showing a gas ring that can be used in high-density plasma chemical vapor deposition (HDP-CVD). [Figure 3] This is a partial cross-sectional side view showing a processing chamber according to an embodiment of this technology. [Figure 4A] This is an isometric view showing a port adapter system according to an embodiment of this technology. [Figure 4B] This is a top view showing the port adapter body of a port adapter system according to an embodiment of this technology. [Figure 4C] This is a top-down cross-sectional view showing a processing chamber according to an embodiment of this technology. [Figure 4D] This is a partial side view showing a processing chamber according to an embodiment of this technology. [Figure 5] This figure shows the steps of an exemplary semiconductor processing method according to some embodiments of this technology. [Figure 6] This is a block diagram showing an exemplary computer system that can be used with the system and method according to the embodiments of this disclosure. [Modes for carrying out the invention]

[0013]

[0022] In the attached diagrams, similar components and / or features may be given the same reference label. Furthermore, various components of the same type may be distinguished by adding a letter after the reference label to distinguish similar components. If only the first reference label is used herein, its description is applicable to any one of the similar components having the same first reference label, regardless of the letter.

[0014]

[0023] One of the key steps in the manufacturing of modern semiconductor devices is to form one or more layers, such as silicon oxide layers, on a substrate or wafer. As is well known, such layers can be deposited by chemical vapor deposition (CVD). In conventional thermal CVD processes, a reactive gas is supplied to the substrate surface, where a thermal chemical reaction occurs to form the desired film. In conventional plasma CVD processes, a controlled plasma is formed using, for example, radio frequency (RF) energy or microwave energy, and reactive species in the reactive gas are decomposed and / or a voltage is applied to generate the desired film. During such CVD processes, unwanted deposition also occurs in areas such as the walls of the processing chamber.

[0015]

[0024] Therefore, after the deposition process is complete, it is crucial to clean any undesirable contaminants remaining from the previous deposition process to ensure that subsequent substrate processing steps are completed without contamination, defects, and process inefficiencies. Specifically, if such contaminants are not removed from the chamber, the surface properties and radio frequency (RF) coupling efficiency of certain components of the processing system may change, potentially leading to performance degradation and loss of production yield. Furthermore, such contaminants may flake off and land on the substrate surface, potentially leading to device defects.

[0016]

[0025] To carry out the cleaning process, a cleaning gas such as nitrogen trifluoride can be introduced into the processing chamber from the upper end of the chamber body and reacted with contaminants in the processing area of ​​the chamber body. Therefore, an exhaust system located below the pedestal can be used to remove the cleaning gas, forming a flow path from the upper end of the chamber body to the exhaust system around the pedestal and / or any other chamber components. If the cleaning gas is not uniformly distributed around the chamber body, it may not interact uniformly with all parts inside the chamber, potentially leaving undesirable contaminants inside the chamber body or in its components such as the pedestal. For example, conventional systems utilize asymmetrical exhaust ports to rapidly remove large amounts of cleaning gas. However, such exhaust port systems often fail to adequately clean the chamber side walls, pedestal, and / or lid located on the opposite side of the processing chamber or spaced apart from one or more exhaust ports.

[0017]

[0026] The present disclosure provides a port adapter system that overcomes these and other problems, namely, a port adapter system that helps improve the cleaning uniformity of a cleaning gas over all or a part of a processing region of a processing chamber. Specifically, the present technology has surprisingly found that by a carefully adjusted combination of port apertures, port connection lengths, and / or individually controllable valves, the flow rate and flow path of the cleaning gas entering the port aperture through the chamber can be controlled to more uniformly distribute the cleaning gas over the entire processing region of the chamber body. Further, due to the individually controllable feature of the present technology, when asymmetry is detected, the ports can be adaptively adjusted in situ to clean a part of the chamber. In some embodiments, valves can be used to control this adjusted cleaning flow rate and flow path. In other embodiments, the size, shape, or a combination thereof of the apertures and pipe systems can be additionally or alternatively adjusted to improve the uniformity of gas removal. Therefore, the port adapter according to the present technology can clean the chamber body more uniformly and, in embodiments, in a more efficient manner. Further, surprisingly, in embodiments, the systems and processes described herein can remove substantially all or all of the undesirable contaminants from the chamber body.

[0018]

[0027] FIG. 1 is a top view showing one embodiment of a processing system 10 of a deposition, etching, baking, and / or curing chamber according to an embodiment. The tool or processing system 10 shown in FIG. 1 can include a plurality of process chambers 24a - d, a transfer chamber 20, a service chamber 26, an integrated measurement chamber 28, and a pair of load lock chambers 16a - b. The process chambers can include any number of structures or components, as well as any number or combination of processing chambers.

[0019]

[0028] To transport the substrate between chambers, the transfer chamber 20 can include a robotic transport mechanism 22. The transport mechanism 22 may have a pair of substrate transport blades 22a respectively attached to the tip of the telescopic arm 22b. The blades 22a can be used to carry individual substrates to and from the process chambers. In the process, one of the substrate transport blades such as the blade 22a of the transport mechanism 22 can take out the substrate W from one of the load lock chambers such as the chambers 16a - b, and carry the substrate W to the first processing stage as described below in the chambers 24a - d, for example, a treatment process. The chambers can be included to perform the individual or combined processes of the described technology. For example, while one or more chambers can be configured to perform deposition or etching processes, one or more other chambers can be configured to perform the described pretreatment process and / or one or more post - treatment processes. Any number of configurations capable of performing any number of additional manufacturing processes typically executed in semiconductor processing are included in this technology.

[0020]

[0029] When the chamber is occupied, the robot can wait until the processing is completed, and then take out the processed substrate from the chamber with one blade 22a and insert a new substrate with the second blade. When the substrate is processed, it can be moved to the second processing stage. In each movement, the transport mechanism 22 can generally have one blade for carrying the substrate and one empty blade for performing substrate exchange. The transport mechanism 22 can wait in each chamber until the exchange can be achieved.

[0021]

[0030] Once processing in the process chamber is complete, the transport mechanism 22 can move the substrate W from the final process chamber and transport the substrate W to a cassette in the load lock chambers 16a-b. The substrate then moves from the load lock chambers 16a-b into the factory interface 12. The factory interface 12 may generally operate to transport the substrate between the pod loaders 14a-d and the load lock chambers 16a-b in a clean environment at atmospheric pressure. The clean environment within the factory interface 12 may generally be provided through an air filtration process, such as HEPA filtration. The factory interface 12 may also include a substrate orienter / aligner that can be used to properly position the substrate before processing. At least one substrate robot, such as robots 18a-b, can be positioned within the factory interface 12 to transport the substrate between various positions / locations within the factory interface 12 and other locations connected thereto. The robots 18a-b may be configured to move along a track system within the factory interface 12 from a first end to a second end of the factory interface 12.

[0022]

[0031] The processing system 10 may further include an integrated measurement chamber 28 that emits control signals, which can provide adaptive control to any of the processes being carried out within the processing chamber. The integrated measurement chamber 28 may include any of various measuring devices for measuring various film properties such as thickness, roughness, and composition, and the measuring devices may further be capable of characterizing grating parameters such as limiting dimensions, sidewall angles, and feature heights in an automated manner under vacuum.

[0023]

[0032] Each of the processing chambers 24a to d can be configured to perform one or more process steps in the manufacturing of semiconductor structures, and any number of processing chambers and combinations of processing chambers can be used on the multi-chamber processing system 10. For example, each processing chamber can be configured to perform several substrate processing steps, including any number of deposition processes, including periodic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, and other steps, including etching, pre-cleaning, pre-treatment, post-treatment, annealing, plasma treatment, degassing, orientation, and other substrate processes. Specific processes that can be performed in any chamber or any combination of chambers may include metal deposition, surface cleaning and surface treatment, thermal annealing such as rapid heat treatment, and plasma treatment. As will be readily apparent to those skilled in the art, any other processes, including any other processes described below, can also be performed in a particular chamber incorporated into the multi-chamber processing system 10.

[0024]

[0033] Figure 2A is a schematic diagram showing the structure of such an HDP-CVD system 210 in an embodiment. The system 210 includes a chamber 213, a vacuum system 270, a source plasma system 280A, a substrate bias plasma system 280B, a gas supply system 233, and a remote plasma cleaning system 250.

[0025]

[0034] The upper part or lid of the chamber 213 includes a dome 214 made of a ceramic dielectric material such as aluminum oxide or aluminum nitride. The dome 214 defines the upper boundary of the plasma processing area 216. The bottom boundary of the plasma processing area 216 is defined by the upper surface of the substrate 217 and the substrate support member 218.

[0026]

[0035] The heater plate 223 and the cold plate 224 rest on the dome 214 and are thermally bonded. The heater plate 223 and the cold plate 224 allow the dome temperature to be controlled within approximately +10°C over a range of approximately 100°C to approximately 650°C. This makes it possible to optimize the dome temperature in various processes. For example, in cleaning or etching processes, it may be desirable to maintain the dome at a higher temperature than in the deposition process. Furthermore, precise control of the dome temperature reduces the number of flakes or particles in the chamber and improves the adhesion between the deposited layer and the substrate.

[0027]

[0036] The lower part of the chamber 213 includes a main body member 222 that connects the chamber to the vacuum system. The base portion 221 of the substrate support member 218 is attached to the main body member 222 and forms a continuous inner surface with the main body member 222. The substrate is transported in and out of the chamber 213 by a robotic blade (not shown) through an insertion / removal opening (not shown) on the side of the chamber 313. A lift pin (not shown) is raised and then lowered under the control of a motor (also not shown) to move the substrate from the robotic blade at the upper loading position 257 to the lower processing position 256 where the substrate is placed on the substrate receiving portion 219 of the substrate support member 218. The substrate receiving portion 219 includes an electrostatic chuck 220 that secures the substrate to the substrate support member 218 during substrate processing. In a preferred embodiment, the substrate support member 218 is made of aluminum oxide or aluminum ceramic material.

[0028]

[0037] The vacuum system 270 includes a throttle body 225 that houses a twin-blade throttle valve 226 and is mounted to a gate valve 227 and a turbomolecular pump 228. It should be noted that the throttle body 225 minimizes obstruction to the gas flow and allows for symmetrical pumping. The gate valve 227 can isolate the pump 228 from the throttle body 225 and can also control the chamber pressure by limiting the exhaust flow rate when the throttle valve 226 is fully open. The arrangement of the throttle valve, gate valve, and turbomolecular pump allows for precise and stable control of the chamber pressure from approximately 1 mTorr to approximately 2 Torr.

[0029]

[0038] The source plasma system 280A includes an upper coil 229 and a side coil 230 mounted on the dome 214. A symmetrical ground shield (not shown) reduces electrical coupling between the coils. The upper coil 229 is powered by an upper source RF (SRF) generator 231A, and the side coil 230 is powered by a side SRF generator 231B, allowing for individual power levels and operating frequencies for each coil. This dual-coil system allows for control of the radial ion density within the chamber 213, improving plasma uniformity. The side coil 230 and upper coil 229 typically operate inductively and do not require complementary electrodes. In a specific embodiment, the upper source RF generator 231A supplies up to 10,000 watts of RF power at a nominal 2 MHz, and the side source RF generator 231B supplies up to 10,500 watts of RF power at a nominal 2 MHz. The operating frequencies of the upper and side RF generators may be offset from the nominal operating frequencies (for example, from 1.7 MHz to 1.9 MHz and from 1.9 MHz to 2.1 MHz, respectively) to improve plasma generation efficiency.

[0030]

[0039] The substrate bias plasma system 280B includes a bias RF ("BRF") generator 231C and a bias matching network 232C. The bias plasma system 280B capacitively couples the substrate portion 217 to the main body member 222, allowing it to function as a complementary electrode. The bias plasma system 280B plays a role in enhancing the transport of plasma species (e.g., ions) generated by the source plasma system 280A to the substrate surface. In a specific embodiment, the substrate bias RF generator supplies up to 10,000 watts of RF power at a frequency of approximately 13.56 MHz.

[0031]

[0040] RF generators 231A and 231B include a digitally controlled synthesizer. Each generator includes an RF control circuit (not shown) that measures the reflected power returning to the generator from the chamber and coil and adjusts the operating frequency to obtain the lowest reflected power, as will be understood by those skilled in the art. RF generators are typically designed to operate with a load having a characteristic impedance of 50 ohms. RF power may be reflected from a load having a different characteristic impedance than the generator. This can reduce the power delivered to the load. Furthermore, power reflected back from the load can overload and damage the generator. Since the impedance of the plasma can range from less than 5 ohms to more than 900 ohms, depending on the plasma ion density among other factors, and the reflected power can be a function of frequency, adjusting the frequency of the generator in accordance with the reflected power increases the power delivered from the RF generator to the plasma and protects the generator. Another way to reduce reflected power and improve efficiency is a matched network.

[0032]

[0041] Matching networks 232A and 232B match the output impedances of generators 231A and 231B with their respective coils 229 and 230. The RF control circuit can adjust both matching networks by changing the capacitor values ​​in the matching networks to match the generators to the load in response to load changes. The RF control circuit can also adjust the matching networks when the power reflected back from the load to the generators exceeds a certain limit. One way to provide constant matching and effectively disable the RF control circuit from adjusting the matching networks is to set the reflected power limit above all expected values ​​of reflected power. This can be helpful in stabilizing the plasma under certain conditions by keeping the matching networks constant in the immediate vicinity.

[0033]

[0042] Other methods may also help stabilize the plasma. For example, an RF control circuit can be used to determine the power supplied to the load (plasma), and the output power of the generator can be increased or decreased to keep the power supplied during layer deposition substantially constant.

[0034]

[0043] The gas supply system 233 supplies gas from several sources 234A–234E to the chamber for processing the substrates via the gas supply line 238 (only a portion of which is shown). As will be understood by those skilled in the art, the actual sources used for sources 234A–234E, and the actual connections of the supply line 238 to the chamber 213, will vary depending on the deposition and cleaning processes performed within the chamber 213. The gas is introduced into the chamber 213 through the gas ring 237 and / or the upper nozzle 245. Figure 2B is a simplified partial cross-sectional view of the chamber 213, showing additional details of the gas ring 237.

[0035]

[0044] In one embodiment, first and second gas sources 234A and 234B, and first and second gas flow controllers 235A' and 235B' supply gas to a ring plenum 236 in a gas ring 237 via a gas supply line 238 (only a portion thereof is shown). The gas ring 237 has a plurality of source gas nozzles 239 (only one of which is shown for illustrative purposes) that supply a uniform flow of gas onto the substrate. The length and angle of the nozzles are adjustable to allow for adjustment of the uniformity profile and gas utilization efficiency for specific processes in individual chambers. In an embodiment, the gas ring 237 has 12 source gas nozzles made of aluminum oxide ceramic, e.g., 10 source gas nozzles, e.g., 8 source gas nozzles, e.g., 6 source gas nozzles, e.g., 4 source gas nozzles, or e.g., 14 source gas nozzles, e.g., 16 source gas nozzles, e.g., 18 source gas nozzles, e.g., 20 source gas nozzles, or any range or number of source gas nozzles in between, made of aluminum oxide ceramic.

[0036]

[0045] The gas ring 237 also has, in one embodiment, a number of oxidizer gas nozzles 240 (only one shown) that are coplanar with the source gas nozzle 239, shorter than the source gas nozzle 239, and, in one embodiment, receive gas from the body plenum 241. In some embodiments, it is desirable not to mix the source gas and the oxidizer gas before injecting the gas into the chamber 213. In other embodiments, the oxidizer gas and the source gas can be mixed before injecting the gas into the chamber 213 by providing an opening (not shown) between the body plenum 241 and the gas ring plenum 236. In one embodiment, third, fourth, and fifth gas sources 234C, 234D, and 234D', as well as third and fourth gas flow controllers 235C and 235D', supply gas to the body plenum via a gas supply line 238. Additional valves, e.g. 243B (other valves not shown), can shut off the gas from the flow controllers to the chamber. In carrying out a particular embodiment of the present invention, source 234A includes a silane SiH4 source, source 234B includes a nitrogen molecule N2 source, source 234C includes a TSA source, source 234D includes an argon Ar source, and source 234D' includes a disilane Si2H6 source.

[0037]

[0046] In embodiments where flammable, toxic, or corrosive gases are used, it may be desirable to remove any gas remaining in the gas supply line after deposition. This can be achieved, for example, by using a three-way valve such as valve 243B to isolate chamber 213 from supply line 238A and vent supply line 238A to vacuum foreline 244. As shown in Figure 2A, other similar valves such as 243A and 243C may be incorporated on other gas supply lines. Such three-way valves can be positioned as close to chamber 213 as practically necessary to minimize the area of ​​non-vented gas supply line (between the three-way valve and the chamber). Furthermore, two-way (on / off) valves (not shown) may be placed between the mass flow controller ("MFC") and the chamber, or between the gas source and the MFC.

[0038]

[0047] Referring again to Figure 2A, the chamber 213 also has an upper nozzle 245 and an upper vent 246. The upper nozzle 245 and upper vent 246 allow for independent control of the upper and side flow of gas, thereby improving film uniformity and allowing for fine-tuning of film deposition and doping parameters. The upper vent 246 is an annular opening around the upper nozzle 345. In one embodiment, a first gas source 234A supplies the source gas nozzle 239 and the upper nozzle 245. Source nozzle MFC 235A' controls the amount of gas supplied to the source gas nozzle 239, and upper nozzle MFC 235A controls the amount of gas supplied to the upper gas nozzle 245. Similarly, two MFCs 235B and 235B' can be used to control the flow of oxygen from a single oxygen source, such as source 234B, to both the upper vent 246 and the oxidizer gas nozzle 240. In some embodiments, oxygen is not supplied to the chamber from any side nozzle. The gases supplied to the upper nozzle 245 and the upper vent 246 may be held separately before flowing into the chamber 213, or they may be mixed in the upper plenum 248 before flowing into the chamber 213. The same gas can be supplied to different parts of the chamber using separate sources.

[0039]

[0048] A remote plasma cleaning system 250 is provided for periodic cleaning of deposited residues from the chamber components. This cleaning system includes a remote plasma generator 251 that generates plasma from a cleaning gas source 234E (e.g., molecular fluorine, nitrogen trifluoride, other fluorinated carbons, or equivalents) in the reactor cavity 253. In embodiments, examples of the remote plasma generator include a microwave source or a radio frequency (RF) source. Examples of such generators may include inductive coupling, transformer coupling, capacitive coupling, and other systems known in the art for generating high-density plasma species. The reactive species generated from this plasma are delivered to the chamber 213 through the cleaning gas supply port 254 via an applicator tube 255. The materials used to contain the cleaning plasma (e.g., the cavity 253 and the applicator tube 255) must be resistant to plasma shock. The distance between the reactor cavity 253 and the supply port 254 should be kept as short as practically possible, as the concentration of desired plasma species may decrease with increasing distance from the reactor cavity 253. By generating the cleaning plasma in a remote cavity, an efficient plasma generator can be used, and the chamber components are not exposed to the temperatures, radiation, or glow discharge collisions that may be present in the in-situ plasma. As a result, relatively sensitive components such as the electrostatic chuck 220 do not need to be covered with dummy wafers or otherwise protected as may be required in the in-situ plasma cleaning process. Figure 2A shows the plasma cleaning system 250 positioned above the chamber 213, but other locations can be used as alternatives.

[0040]

[0049] By providing the baffle 261 close to the upper nozzle, the flow of source gas supplied through the upper nozzle can be guided into the chamber, thereby guiding the flow of remotely generated plasma. The source gas supplied through the upper nozzle 245 is guided into the chamber through the central passage 262, and the remotely generated plasma species supplied through the cleaning gas supply port 354 is guided to the side of the chamber by the baffle 261.

[0041]

[0050] Next, we refer to Figure 3, a cross-sectional view showing an exemplary processing chamber 300 according to several embodiments of the present technology. In embodiments, the chamber 300 may include any one or more of the features described above with respect to the system 210. In embodiments, it should be understood that features ending in the same reference numeral as those described above are equivalent unless otherwise noted below. The processing chamber 300 includes a chamber body 302 having an upper (or first) end 301 and a bottom (or second) end 303. A gas ring 315 and a lid 316 may be connected to the upper end 301 of the chamber body 302. The chamber body 302, the gas ring 315, and the substrate support 304 define a processing area 320 on which a substrate can be processed. The substrate support 304 may be positioned on a shaft 344 and movable within the chamber body 302 through the shaft 344, or the substrate support 304 may be fixedly supported by the chamber sidewall as described above with respect to the system 210. In this embodiment, the port adapter system 360 may be connected to the bottom end 303 of the chamber body 302, or it may be formed on or around the bottom end 303 of the chamber body 302.

[0042]

[0051] As described above, in the embodiments, it may be necessary to clean all undesirable contaminants remaining in the chamber body 302 from previous deposition processes in order to prevent substrate defects in subsequent processes. In the embodiments, a cleaning gas, which may be any etching gas or cleaning gas known in the art, such as nitrogen trifluoride, can be introduced or flowed into the chamber body 302, such as within the processing area 320, from the upper end 301 of the chamber body 302, to react with contaminants in the processing area 320 of the chamber body 302. For example, the cleaning gas can be introduced through an inlet 314, which may be connected to a plasma cleaning system (not shown), as known in the art, and can be flowed into the processing area 320 through a gas ring 315. In the embodiments, the cleaning gas can be activated by microwave or radio frequency (RF) power to dissociate the cleaning gas, such as NF3, into reactive groups that can interact with any contaminants present. In addition or alternatively, the cleaning gas can be activated (e.g., remotely) before being introduced through the inlet 314 and may contain an inert carrier gas such as argon or helium.

[0043]

[0052] Regardless of the form of the cleaning gas, once introduced into the chamber body, the cleaning gas can interact with deposits and other contaminants present on the chamber body 302 (including any of its side or bottom walls), the substrate support 304, the shaft 344, the lid 316, and / or the gas ring 315, as well as any other exposed surfaces of one or more chamber components. During and / or after cleaning, the cleaning gas can be removed from the chamber body 302 by using the port adapter system 360 to form a flow path from the upper end 301 to the bottom end 303 of the chamber body 302, which distributes the cleaning gas around the chamber body 302 and all chamber components within it. In embodiments, this distribution can exhibit improved uniformity compared to conventional systems, and thus it is possible to contact all or part of the exposed surfaces for approximately equal time. Thus, the port adapter system 360 can facilitate more efficient and complete cleaning of the chamber body 302 after one or more deposition processes.

[0044]

[0053] As shown in Figure 3, the port adapter system 360 may be connected to the bottom end 303 of the chamber body 302 by welding, adhesive, detachable or non-detachable fastening, etc. However, in other embodiments, the port adapter and the chamber body may be integrally formed with each other such that the port adapter system forms the bottom end of the chamber body. In some such embodiments, openings may be formed in the bottom or lower part of each side wall or side wall region. In yet another embodiment, the port adapter may be positioned at an intermediate position in the chamber body between the top end and the bottom end of the chamber body.

[0045]

[0054] Similarly, referring to Figures 4A to 4D, which show various diagrams of the port adapter system 360, the port adapter system 360 may include an adapter body 361, adapter shafts 365a to 365c (clearly shown in Figures 4B and 4C), and adapter flanges 367a to 367c extending radially from the adapter body 361. The port adapter body 361 may be made of stainless steel, aluminum, or the like. The adapter flanges 367a to 367c may be connected to valves 363a to 363c, and the valves 363a to 363c may be fluidically coupled to a system foreline 392 (e.g., an exhaust pump) through a pipe system 380a to 380c. The system foreline 392 may be fluidly coupled to a system foreline to an exhaust outlet and a vacuum source. In this way, the system foreline 392 can remove gas from the chamber body 302 to the vacuum source through the port adapter system 360 and the pipe systems 380a-380c. Although three flanges, valves, and shafts are shown, it should be understood that there may be more or fewer of each port adapter component, as will be described in more detail below. Therefore, in the embodiment, the number of flanges, valves, and / or shafts may be in an amount corresponding to the number of port adapter openings 362a-362x.

[0046]

[0055] The adapter body 361 may have a toroidal or annular shape. However, in other embodiments, the port adapter body may have any other geometric shape, such as a cube, or it may be a mirror image of the cross-sectional shape of the chamber body 302. The outer surface 366b of the adapter body 361 may define recesses 369 spaced circumferentially around the adapter body 361. The recesses 369 may be sized and shaped to receive one or more fasteners (as will be further described below with reference to Figure 4D). However, as mentioned above, if the port adapter is integrally formed with the chamber body, such recesses 369 may not exist.

[0047]

[0056] One or more adapter shafts 365a to 365c may have a first end fixed to or detachably attached to the adapter body 361, and may extend radially outward from the adapter body 361 to a second end. The adapter shafts 365a to 365c may be cylindrical and therefore have a generally circular cross-section. However, in other embodiments, the adapter shafts may have any other geometric shape, such as a cube, and a corresponding cross-sectional shape. Nevertheless, in embodiments, the adapter shafts 365a to 365c may be attached to the adapter body 361 at a position on the adapter body 361 such that each shaft 365a to 365c surrounds the outer surface of one or more openings 362a to 362c, defining a fluid flow path from inside the port adapter 361 through one or more openings 362a to 362c to inside each adapter shaft 365a to 365c.

[0048]

[0057] One or more adapter flanges 367a to 367c may be provided at the second end of each adapter shaft 365a to 365c such that each flange 367a to 367c is positioned radially apart from the processing area 320 and / or adapter body 361 by the respective adapter shaft 365a to 365c. In some embodiments, one or more of the adapter flanges 367a to 367c may have an outer diameter (or cross-sectional width) larger than the outer diameter (or cross-sectional width) of the adapter shafts 365a to 365c. However, in other embodiments, there may be no adapter flanges, or the adapter flanges may be second sections of one or more adapter shafts 365a to 365c having an outer diameter similar to, identical to, or different from the outer diameter of the one or more adapter shafts 365a to 365c.

[0049]

[0058] Similarly, as described above, the adapter body 361 may define one or more openings 362a, 362b (and also opening 362c, as clearly shown in Figures 4B and 4C) that extend through the adapter body 361. In the embodiment, each opening 362a-362c extends from the inner surface 366a to the outer surface 366b of the adapter body 361, and the processing area can be fluidly connected to the respective adapter shafts 365a-365c and adapter flanges 367a-367c. Thus, each opening 362a-362c may be fluidly connected to the processing area 320 and the system foreline 392. Although the port adapter body 361 is shown defining three openings 362a-362c, in the embodiment the port adapter body may define more or fewer port adapter openings (e.g., one, two, four, five, etc.). The adapter shafts 365a to 365c and adapter flanges 367a to 367c extending from the adapter body 361 may be numbered in equal proportions to the number of openings 362a to 362c. For example, in this embodiment, there may be more or fewer than three openings, and correspondingly, there may be more or fewer than three adapter shafts. As is most clearly shown in Figure 4D, the adapter shafts 365a to 365c and adapter flanges 367a to 367c may be concentric with the openings 362a to 362c.

[0050]

[0059] In some embodiments, one or more of the openings 362a to 362c may have a generally cylindrical shape and a corresponding region (for example, a region defined by the opening from the inner surface 366a to the outer surface 366b). However, in other embodiments, the openings may have any other geometric shape, including being oval, rectangular, truncated cone, etc., defining a region therein. The inner surface 366a and outer surface 366b of each opening 362a to 362c may define an opening for the openings 362a to 362c and / or define a cross-sectional shape corresponding to the flange surfaces 364a to 364c. However, in some embodiments, the surfaces may define the openings to have openings of any shape, including being circular, oval, rectangular, triangular, slit-shaped, etc. In further embodiments, each opening may have a different shape and size, and is therefore individually selected to be the same or different.

[0051]

[0060] As described above, the technology has surprisingly found that improved cleaning can be achieved by carefully spacing one or more openings around the adapter body 361, either individually or in combination with the tuned features of the adapter system 360 that allow for high-level control of flow conductance. For example, in the embodiment, by controlling the flow rate of gas removed through each of the openings 362a-362c and the spacing between the openings 362a-362c, it may be possible to improve the uniformity of the cleaning gas flow path and exhaust velocity as the gas flows over the chamber body 302 and all exposed surfaces therein. By controlling the gas exhaust velocity and / or flow path, it may be possible to direct a desired volume of cleaning gas to any part of the chamber body 302, for example, the part located between each of the openings 362a-362c and other exposed surfaces therein. The spacing (and therefore, in embodiments, location) of the openings 362a to 362c allows for the selection and flow of defined gas pathways along a desired section of the chamber body 302 (e.g., along all sections of the chamber body 302). If either the gas flow rate or the spacing is improperly adjusted, the cleaning gas pathway may not interact uniformly with all parts of the chamber body 302. For example, if the flow is not properly adjusted, parts of the chamber body 302 adjacent to openings 362a to 362c with lower gas flow rates and / or wider spacings may not be adequately cleaned by the cleaning gas. Therefore, the technology allows for individually coordinated adjustment of flow conductance by carefully controlling, for example, one or more flow coefficients such as the gas flow rate entering the openings 362a to 362c and / or the spacing between the openings 362a to 362c, in order to supply a gas flow suitable for cleaning the selected chamber body 302.

[0052]

[0061] For example, in one embodiment, the precise gas flow rate to one or more openings, such as one or more of the openings 362a to 362c in one example, can be adjusted by reducing the size of each opening or by carefully selecting the spacing between each opening. As described above, the spacing of the openings 362a to 362c may be important for controlling the uniformity of the gas flow throughout the chamber body 302. In an embodiment, the openings 362a to 362c (and therefore, in an embodiment, the corresponding adapter shafts 365a to 365c and adapter flanges 367a to 367c) may be spaced apart along the adapter body 361, which can be most clearly shown in Figure 4B.

[0053]

[0062] For example, in this embodiment, the openings 362a to 362c may be spaced apart along the adapter body 361, which may be an arc-shaped path, defining an arc between each opening that is 80° or more, e.g., 85° or more, e.g., 90° or more, e.g., about 95° or more, e.g., 100° or more, e.g., 105° or more, e.g., about 110° or more, e.g., about 115° or more, e.g., about 120° or more, e.g., about 125° or more, e.g., about 130° or more, e.g., about 135° or more, e.g., about 150° or less, e.g., about 145° or less, e.g., about 140° or less, e.g., about 135° or less, e.g., about 130° or less, or any range or value in between. Nevertheless, in the embodiment, the openings 362 may be spaced apart such that the distance between adjacent sets of openings varies by an arc length of approximately 25° or less, e.g., 20° or less, e.g., 15° or less, e.g., 10° or less, e.g., 5° or less, e.g., 2.5° or less, e.g., 1° or less, or any range or value in between, from the average arc length (e.g., the average of the arc lengths of each adjacent opening 362 present in each port adapter 360).

[0054]

[0063] In other words, each opening may be spaced apart from adjacent openings so that the shapes of other adapter bodies 361 can be used in embodiments, and the distance between adjacent openings may be within approximately 30% of the overall average distance, for example, about 20% or less, for example, about 17.5% or less, for example, about 15% or less, for example, about 12.5% ​​or less, for example, about 10% or less, for example, about 7.5% or less, for example, about 5% or less, for example, about 2.5% or less, for example, about 1% or less, or any range or value in between. Nevertheless, in embodiments, each opening may be spaced roughly equidistant from the adapter body. For example, just as an example, if there are three openings, they may be spaced approximately 120° apart along an arc-shaped path, or if there are four openings, they may be spaced approximately 90° apart.

[0055]

[0064] Therefore, in the embodiment, cleaning gas can be removed through the port adapter system 360 by carefully spacing out the openings 362a to 362c around the adapter body according to any one or more of the above ranges, and the uniformity of the cleaning flow is improved throughout the interior of the chamber body 302. That is, as described above, in conventional systems, ports or openings are spaced apart to maximize the flow (flow rate, etc.) from the chamber, to quickly clean and discharge process gas from the chamber, and to accelerate the cycle between process steps. However, the orientation of the ports in conventional systems is asymmetrical (e.g., there is a large variation in the spacing between ports), and attempts have been made to use a combination of high-conductance and low-conductance ports to overcome the flow rate difference while maintaining the maximum removal rate at a constant chamber pressure. However, such asymmetrical systems cannot uniformly clean the chamber and chamber components and are insufficient to control the etching rate of the cleaning gas. Conversely, the present technology has surprisingly discovered that excellent flow rate and symmetrical cleaning can be obtained by carefully controlling the orientation and configuration of the port adapter components.

[0056]

[0065] For example, in relation to the orientation of the openings described above, the technology has found that a removal rate individually corresponding to each opening 362 and its corresponding flow path can be obtained by one or more factors that control the flow conductance through each opening 362a to 362c and its corresponding fluid flow path to the foreline. In embodiments, the flow coefficient may include one or more of the opening diameter, flow path diameter, and total flow path distance (e.g., the length of the flow path between each opening 362a to 362c and the foreline). In some embodiments, one or more throttle valves may also be used, but may not be necessary depending on the factors described above. Where "flow rate" is referred to herein, the system foreline 392 can remove cleaning gas from the internal region of the chamber body 302 through the openings 362a to 362c, and each flow path originating from each opening 362a to 362c may have a flow rate specific to the flow path of the gas removed through its respective opening. In this embodiment, the flow rate can be measured in an open region defined between the inner and outer surfaces 366a, 366b and the system foreline 392.

[0057]

[0066] Therefore, in the embodiment, the flow rate of gas removed through the flow path of each opening 362a to 362c can be controlled by adjusting one or more of the diameters and shapes of the one or more individual openings 362a to 362c. For example, as a mere example, the diameter of opening 362a can be widened to increase the flow rate of gas exhausted through opening 362a, and / or the diameter of one or more of the openings 362b, 362c can be narrowed to decrease the flow rate of gas removed through openings 362b, 362c. In another example, alternatively or additionally, the flow rate of gas removed through openings 362a to 362c can be adjusted by individually adjusting the shapes of the openings 362a to 362c.

[0058]

[0067] In embodiments, the diameters of the openings 362a to 362c may be about 0.2 inches or more, for example about 0.4 inches or more, for example more than 0.6 inches, for example more than 0.8 inches, for example more than 1 inch, or about 4 inches or less, for example about 3.5 inches or less, for example about 3 inches or less, for example about 2.5 inches or less, for example about 2 inches or less, or any range or value in between. In embodiments, the diameters of each of the openings 362a to 362c may be selected to be the same or different according to any one or more of the above diameters. Furthermore, it is clear that any existing openings may be selected individually or jointly with respect to the openings 362a to 362c according to any one or more of the above openings or values ​​described herein.

[0059]

[0068] The flow rate of the cleaning gas removed through each of the openings 362a to 362c can also be controlled by adjusting the flow path distance (also referred to as the flow path length between each of the openings 362a to 362c and the system foreline 392) by adjusting the pipe systems 380a to 380c, etc. Each of the pipe systems 380a to 380c may include one or more pipe sections 381, 382 (i.e., a straight pipe section 381 and an angled pipe section 382). The angled pipe section 382 may be bent, curved, or have any other arbitrary non-linear geometric shape. The pipe sections 381, 382 may be separate parts connected to each other, or may be different parts along a monolithic pipe. However, it should be understood that in some embodiments, the flow path length may be changed by any method known in the art to increase or decrease the flow path length, and therefore may simply refer to the final pipe section with a changed flow path length, regardless of the number of sections or non-linear parts. The openings 362a to 362c may be fluidically coupled to the system foreline 392 by corresponding pipe systems 380a to 380c. Such pipe systems 380a to 380c may define the flow path from one or more valves 363a to 363c to the system foreline 392. The lengths of each pipe system 380a to 380c, as well as the lengths of each flange 367a to 367c, define the corresponding flow path lengths from each opening 362a to 362c to the system foreline 392.

[0060]

[0069] In other words, as described above, the flow path length can also contribute to the flow rate of gas removed through each of the openings 362a to 362c. For example, if the flow path length from opening 362a to system foreline 392 is longer than the flow path length from openings 362b and / or 362c to system foreline 392, the flow rate through opening 362a may decrease compared to openings 362b and 362c, even if all other factors are kept constant. Therefore, the flow rate to system foreline 392 can be adjusted by adjusting the flow path length between openings 362a to 362c and system foreline 392. For example, the flow rate to opening 362a can be increased by shortening the total path length of the pipe system 380a between opening 362a and system foreline 392. Alternatively or additionally, to improve the uniformity of the relative flow rates of the cleaning gas removed through each of the one or more openings 362b and / or 362c, the total path length of one or more pipe systems 380b and / or 380c between one or more of the openings 362b and / or 362c and the system foreline 392 can be increased. Doing so can reduce the flow rate of gas removed through one or more of the openings 362b and 362c relative to the opening 362a.

[0061]

[0070] Nevertheless, in the embodiment, the flow rate can be controlled by adjusting the internal shape and / or diameter of each pipe system 380a to 380c. For example, certain parts of pipe systems 380a to 380c may include an increased or decreased diameter so as to increase or decrease the corresponding flow rate. Alternatively or additionally, certain parts of pipe systems 380a to 380c may include alternative internal shapes, such as a funnel shape or stepped orientation, to control the flow rate.

[0062]

[0071] As described above, the flow rate of the cleaning gas when the gas is removed can be further adjusted by adjusting one or more of the sizes of the openings 362a to 362c, the total flow path length between the openings 362a to 362c and the system foreline 392, and / or the path length. In embodiments, combinations of these flow coefficients can be applied to the port adapter system 360 to control the flow rate of the gas exhausted through one or more of the openings 362a to 362c. For example, reducing the flow rate of the gas removed through opening 362a may include, just as an example, reducing the size of opening 362a, increasing the flow path length between opening 362a and the system foreline 392, limiting the diameter of each pipe system 380a, and / or incorporating one or more non-linear pipe sections. In another example, increasing the flow rate of gas removed through the opening 362b may include, just as an example, increasing the size of the opening 362b, decreasing the flow length between the openings 362b, increasing the diameter of each pipe system 380b, and / or reducing / eliminating any non-linear pipe sections to allow more gas to flow into the opening 362b.

[0063]

[0072] For example, in the illustrated embodiment, which may be merely an example, the opening 362a can be determined as a restricting flow path and may be configured to exhibit the minimum flow rate necessary (or any desired) to remove gas while maintaining an appropriate pressure within the chamber body 302. Thus, in such an example, the flow paths extending through the openings 362b and / or 362c can be adjusted by increasing and / or decreasing their respective flow rates to exhibit a flow rate of about 10% or less of the flow rate through the opening 362a, for example, within about 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, etc., or any range or value in between.

[0064]

[0073] Nevertheless, in embodiments, each flow path through openings 362a-362c may include one or more individually controllable valves 363a-363c. For example, one or more of the valves 363a-363c may be isolation valves (i.e., valves that can turn the flow on or off for a particular opening 362a-362c) or throttle valves (i.e., valves that can be adjusted between flow rate ranges). In embodiments, the valves 363a-363c may be connected along any point in the adapter system 360, such as any point between each opening 362a-362c and the foreline 392. For example, in embodiments, one or more valves 363a-363c may be fixed to adapter flanges 367a-367c and / or pipe systems 380a-380c. Valves 363a to 363c may be fluidically coupled to the system foreline 392 (for example, within each of the flow paths starting at openings 326a to 362c) so that valves 363a to 363c isolate their respective flow paths or control the flow rate of gas entering the system foreline 392 from openings 362a to 362c.

[0065]

[0074] In some embodiments, one or more of the valves 363a to 363c can individually control whether gas is allowed to enter each of the openings 362a to 362c. In some embodiments, one or more of the valves 363a to 363c can also individually control the gas flow rate through each corresponding opening 362a to 362c, independently of the other valves 363a to 363c. However, in some embodiments, a throttle valve may not be necessary due to other flow factors that can be adjusted as described above.

[0066]

[0075] While throttle valves may be unnecessary for the parameters described above, this technology has surprisingly found that, at least in part due to the spacing and flow conductance of this technology, a portion of the chamber body can be selectively cleaned using one or more individually controllable isolation valves. For example, by providing individually controllable valves 363a to 363c, the gas flow can be restricted and directed to one or more sections of the chamber body 302. For example, it may be determined that a portion of the chamber body 302 between openings 362a and 362b contains more undesirable contaminants (e.g., a portion of the chamber body 302 between openings 362a and 362b where contaminants remain after initial cleaning). In such cases, the gas flow into opening 362c can be restricted by closing valve 363c (e.g., by partially or completely closing valve 363c). This allows the gas flow rate into openings 362a and 362b to be higher than the gas flow rate into opening 362c, thereby directing more gas to openings 362a and 362b. This, in turn, leads to more gas flowing over the portion of the chamber body 302 adjacent to openings 362a and 362b (for example, between openings 362a and 362b). In this way, by individually adjusting one or more of the valves 363a to 363c so that each has a different flow rate, more cleaning gas can be directed to a specific section of the chamber body 302. Thus, surprisingly, unlike conventional systems, this technology can provide initial cleaning with improved uniformity, as well as the ability to selectively clean areas within the chamber body 302, such as the side walls. Nevertheless, embodiments may include an additional throttle valve 390.

[0067]

[0076] Accordingly, in embodiments, the system according to the present technology can clean approximately 85% by weight or more of the residue accumulated on the chamber sidewalls, chamber pedestals, or combinations thereof, e.g., approximately 87.5% by weight, e.g., approximately 90% by weight, e.g., approximately 92.5% by weight or more, e.g., approximately 95% by weight or more, or any range or value in between. In other embodiments, it should be understood that any number of valves, e.g., two or more valves, can be adjusted to control the gas flow targeting a specific section of the chamber body. In some embodiments, the amount of undesirable contaminants in the chamber body 302 can be detected using a computer system (e.g., using one or more sensors), which will be described further below, as well as adjusting the valves 363a-363c.

[0068]

[0077] Nevertheless, although not necessary in the embodiment, as described above, in the embodiment it may be beneficial that valves 363b, 363c are throttle valves and each valve can limit the rate of cleaning gas removed through one or more openings 362b, 362c (for example, by closing valves 363b, 363c). Alternatively, in an embodiment where opening 362a is further away from the system foreline 392, it may be beneficial that valve 363a can allow more cleaning gas to enter opening 362a (for example, by being opened further), and / or that valves 363b, 363c can limit the cleaning gas entering openings 362b, 362c (for example, by being further closed relative to valve 363a). In this way, the cleaning gas entering openings 362a-362c from within the chamber body 302 can be further controlled. As will be further explained below, valves 363a to 363c can be opened and closed to allow more gas to enter openings 362a to 362c based on the flow path length (for example, valves 363a to 363c can allow more gas to enter openings 362a to 362c with a longer flow path length, or can restrict the gas entering openings 362a to 362c with a shorter flow path length) and the size of openings 362a to 362c.

[0069]

[0078] Referring to Figure 4D, the adapter flange 367a may define fastener openings 368 arranged circumferentially along the adapter flange 367a. The fastener openings 368 may have a circular shape. However, in other embodiments, the fastener openings may have any other shape, including oval, rectangular, triangular, slit-shaped, etc. Although not shown, the adapter flanges 367b and 367c may be structurally similar to the adapter flange 367a (including defining the same number of fastener openings 368, for example). However, in other embodiments, one or more of the adapter flanges may differ from the other flanges (e.g., having a different number of openings, different shapes, different sizes, etc.). The fastener openings 368 may be configured to connect to fasteners (e.g., screws, nails, bolts, rivets, etc.). For example, the port adapter system 360 can be connected to one or more valves 363a-363c by positioning them to connect with adapter flanges 367a-367c, and then by inserting fasteners through openings defined in the valves 363a-363c and through fastener openings 368 along the adapter flanges 367a-367c. Figure 4D shows an adapter flange 367a defining six fastener openings 368, but in other embodiments, there may be any number of openings (one, two, three, etc.). In other embodiments, the port adapter system may not include one or more adapter flanges or shafts. For example, the port adapter system may not include adapter flanges, and the valves may be connected to adapter shafts. In another example, the valves may be directly connected to the adapter body. For example, in an embodiment, the port adapter system 360 and / or flanges 367a-367c may be fixedly attached to the processing system 100 by welding or other means.

[0070]

[0079] Furthermore, the chamber body 302 may define a recess 317 corresponding to a recess 369. In this example, a fastener system 370 (e.g., a bolt and washer) can be received in the recesses 317 and 369, and a port adapter system 360 can be connected to the bottom end of the chamber body 302.

[0071]

[0080] Figure 5 shows the steps of an exemplary semiconductor processing method 400 according to several embodiments of the present technology. The method can be performed in various processing chambers, including the processing chamber 300 described above, which may include a port adapter system and other features according to embodiments of the present technology. Method 400 may include a number of optional steps that may or may not be particularly relevant to some embodiments of the method according to the present technology. Method 400 may be performed by a computer system, as described below.

[0072]

[0081] Method 400 may include a processing method that includes a step for forming a hard mask film or other deposition steps (e.g., including forming a thick or thin film). The method may include optional steps before the start of Method 400, or the method may include additional steps. For example, Method 400 may include steps that are performed in a different order than shown. In some embodiments, Method 400 may include, in step 405, flowing one or more plasma species or their precursors into the processing chamber. For example, in an embodiment, a precursor or remotely generated plasma, which may be a high-density plasma, may be flowed into the processing area of ​​a chamber body, such as a chamber body 302 included in the processing chamber 300. In some embodiments, the precursor may be a carbon-containing precursor or plasma species, or may include a carbon-containing precursor or plasma species.

[0073]

[0082] In step 410, as described above, plasma can be supplied to the processing area by providing a remote plasma source or another plasma source. In step 415, a material formed in the plasma, such as a carbon-containing material, can be deposited onto the substrate.

[0074]

[0083] In step 420, once the deposition process is complete, the cleaning gas can be flowed into the chamber body 302 (for example, from the gas ring 315) and removed through the processing area 320 and the port adapter system 360 located below the bottom end 303 of the chamber body 302. The system foreline 392 can remove the cleaning gas towards the vacuum source through openings 362a-362c in the adapter body 361, through valves 363a-363c, and through the pipe system 380.

[0075]

[0084] Nevertheless, in some embodiments, a detection step 425 can be performed to determine whether or not asymmetry exists in the cleaning. Such detection may be by user monitoring or via one or more sensors in the system. In some embodiments, a controller, which may include a computer system, machine learning algorithms, artificial intelligence, or a combination thereof, can receive data from one or more sensors coupled to the chamber body 302 regarding the amount or presence of undesirable contaminants in the chamber body 302 and / or the flow of cleaning gas through the chamber body 302, or wafer processing data obtained from one or more processed wafers. The controller may determine that the amount of cleaning in one or more sections of the chamber body 302 is insufficient and therefore undesirable contaminants remain. In such embodiments, in step 430, the controller, or an individual operator, can adjust the port adapter system 360 to change the flow rate of gas entering the openings 362a-362c. Specifically, the controller can restrict or open one or more of the valves 363a to 363c to reduce or increase the flow rate of cleaning gas entering the openings 362a to 362c.

[0076]

[0085] For example, the controller may determine that sections of the chamber body 302 adjacent to openings 362a and 362b may require additional cleaning gas. The controller can close valve 363c to open openings 362a and 362b, thereby increasing the flow rate of gas entering openings 362a and 362b and the flow between them. Alternatively or additionally, the controller can adjust one or more of the other valves 363b, 363c to restrict the flow therein, thereby reducing the flow rate of gas entering openings 362b and 362c relative to opening 362a.

[0077]

[0086] However, in embodiments, steps 425 and / or 430 may be performed by a user. Such monitoring may be visual or based on one or more sensors. Nevertheless, in embodiments, the flow path may be restricted or opened based on asymmetric cleaning or residue detection.

[0078]

[0087] Nevertheless, as shown in Figure 6, in the embodiments, the system and method can be fully or partially implemented by a processor that may be incorporated as part of the controller or processor described herein. For example, system 600 may represent some of the components of the controller described herein. Figure 6 provides a schematic diagram of one embodiment of system 600 that can implement the method provided by various other embodiments described herein. Figure 6 is intended only to provide a generalized illustration of the various components, any or all of which may be used as appropriate. Thus, Figure 6 roughly shows how individual system elements may be implemented in a relatively separate or relatively integrated form.

[0079]

[0088] A system 600 is illustrated which includes hardware elements that may be electrically coupled via bus 605 (or, as appropriate, communicate by other means) and connected to the controller described above. The hardware elements may include, but are not limited to, one or more central processing units (CPUs), image processing units (GPUs), special-purpose processors (such as digital signal processing chips, graphics acceleration processors, and / or similar); one or more input devices 615 which may include, but are not limited to, keyboards, touchscreens, receivers, motion sensors, cameras, smart card readers, contactless media readers, and / or similar; and a processing unit 610 which may include, but are not limited to, one or more output devices 620 which may include, but are not limited to, display devices, speakers, printers, writing modules, and / or similar.

[0080]

[0089] System 600 may further include (and / or communicate with) one or more non-transient storage devices 625, which may include, but are not limited to, local and / or network-accessible storage, and / or solid-state storage devices such as disk drives, drive arrays, optical storage devices, random access memory ("RAM") and / or read-only memory ("ROM"), which may be programmable, flash-updatable, and / or similar. Such storage devices may be configured to implement any suitable datastore, including, but not limited to, various file systems, database structures, and / or similar.

[0081]

[0090] System 600 may also include a communication interface 630 which may include, but is not limited to, a modem, a network card (wireless or wired), an infrared communication device, a wireless communication device and / or a chipset (such as a Bluetooth device, a 502.11 device, a Wi-Fi device, a WiMAX device, an NFC device, a cellular communication device, etc.), and / or a similar communication interface. The communication interface 630 may enable the exchange of data with a network (for example, the network described below), another processor, and / or any other device described herein. In many embodiments, System 600 further includes a non-transient working memory 635 which may include a RAM or ROM device as described above.

[0082]

[0091] System 600 may also include a processor program provided by various embodiments described herein, and / or software elements shown as currently located in working memory 635, including an operating system 640, device drivers, executable libraries, and / or other code such as one or more application programs 645, which may be designed to implement and / or constitute a system, as provided by other embodiments. As mere examples, one or more steps described above with respect to the method(s) or system may be implemented as code and / or instructions executable by a computer (and / or a processor in the computer); then, in one embodiment, such special / particular-purpose code and / or instructions may be used to configure and / or adapt a computing device into a special-purpose computer configured to perform one or more steps according to the described method.

[0083]

[0092] These instructions and / or codes can be stored in a computer-readable storage medium such as one or more storage devices 625 described above. In some cases, the storage medium may be incorporated into a computer system such as system 600. In other embodiments, the storage medium may be separate from the computer system (e.g., a removable medium such as a compact disk) and / or provided in an installation package, and the storage medium can be used to program, configure, and / or adapt a special-purpose computer with the instructions / code stored therein. These instructions may take the form of executable code that can be executed by system 600 and / or may take the form of source code and / or installable code that, when compiled and / or installed on system 600 (e.g., using any of the various compilers, installation programs, compression / decompression utilities available), take the form of executable code.

[0084]

[0093] Significant modifications may be made to meet specific requirements. For example, customized hardware may be used, and / or certain elements may be implemented in hardware, software (including portable software such as applets), or both. Furthermore, hardware and / or software components that provide specific functions may comprise a dedicated system (with specialized components) or be part of a more general-purpose system. For example, a risk management engine configured to provide some or all of the features described herein related to risk profiling and / or distribution may comprise dedicated (e.g., application-specific integrated circuit (ASIC), software scheme, etc.) or general-purpose (e.g., processor 610, application 645, etc.) hardware and / or software. Furthermore, connections to other computing devices, such as network input / output devices, may be employed.

[0085]

[0094] In some embodiments, the methods relating to this disclosure can be carried out by employing a controller (such as system 600) which may include a computer system, artificial intelligence, machine learning, or a combination thereof. For example, some or all of the steps of the described method may be executed by system 600 in response to the processing unit 610 executing one or more sequences of one or more instructions contained in working memory 635 (which may be incorporated into other code such as the operating system 640 and / or application program 645). The instructions may be read into working memory 635 from another computer-readable medium such as one or more storage devices 625. As just one example, the processing unit 610 may be made to execute one or more steps of the method described herein by executing a sequence of instructions contained in working memory 635.

[0086]

[0095] As used herein, the terms “machine-readable medium” and “computer-readable medium” refer to any medium involved in providing data that enables a machine to operate in a particular manner. In embodiments implemented using System 600, various computer-readable media may be involved in providing instructions / codes to the processing unit 610 for execution and / or may be used to store and / or carry such instructions / codes (e.g., as signals). In many implementations, computer-readable media are physical and / or tangible storage media. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical disks and / or magnetic disks such as one or more storage devices 625. Volatile media include, but are not limited to, dynamic memory such as working memory 635. Transmission media include, but are not limited to, coaxial cables, copper wires, and optical fibers, including wires with bus 605, and various components of the communication interface 630 (and / or media through which the communication interface 630 provides communication with other devices). Therefore, the transmission medium can also take the form of waves (including, but not limited to, radio waves, acoustic waves and / or light waves, such as those generated during radio and infrared data communications).

[0087]

[0096] Common forms of physical and / or tangible computer-readable media include, for example, magnetic media, optical media, or any other physical media having a pattern of holes, RAM, PROM, EPROM, FLASH-EPROM, any other memory chip or cartridge, carrier waves as described below, or any other media from which a computer can read instructions and / or code.

[0088]

[0097] The communication interface 630 (and / or its components) generally receives a signal, and the bus 605 then transmits the signal (and / or the data, instructions, etc. transmitted by the signal) to the working memory 635, from which one or more processors 610 read and execute the instructions. Instructions received by the working memory 635 may optionally be stored in the non-transient storage device 625 either before or after execution by the processing unit 610 and the controller.

[0089]

[0098] In the embodiments described above, the processes may be described in a specific order for illustrative purposes. It should be understood that in alternative embodiments, the methods may be executed in an order different from that described. It should also be understood that the methods and / or system components described above may be executed by hardware and / or software components (including integrated circuits, processing units, etc.), or may be embodied in a sequence of machine-readable instructions or computer-readable instructions that can be used to cause a machine, such as a general-purpose or special-purpose processor or logic circuit programmed for instructions, to execute the methods. These machine-readable instructions may be stored in one or more machine-readable media, such as a CD-ROM or other type of optical disk, floppy disk, ROM, RAM, EPROM, EEPROM, magnetic card or optical card, flash memory, or other type of machine-readable medium suitable for storing electronic instructions. Alternatively, the methods may be executed by a combination of hardware and software.

[0090]

[0099] While the subject matter of embodiments of the present invention is described herein in detail to satisfy legal requirements, this description is not necessarily intended to limit the scope of the claims. The claimed subject matter may be embodied in other ways, may include different elements or steps, and may be used in combination with other existing or future technologies. This specification should not be construed as implying any particular order or arrangement between various steps or elements unless the order of individual steps or the arrangement of elements is expressly stated.

[0091]

[0100] As used herein, the terms “about,” “approximately,” or “substantially, nearly” may be interpreted as meaning the range that a person skilled in the art would expect in light of this specification.

[0092]

[0101] In the preceding description, for explanatory purposes, numerous specific details were provided to provide a complete understanding of various embodiments. However, it will be apparent that some embodiments can be implemented even if some of these specific details are missing. In other examples, well-known structures and devices are shown in the form of block diagrams.

[0093]

[0102] The foregoing description provides only exemplary embodiments and is not intended to limit the scope, applicability, or configuration of this disclosure. Rather, the foregoing description of various embodiments provides a feasible disclosure for implementing at least one embodiment. It should be understood that various modifications can be made to the function and arrangement of elements without departing from the spirit and scope of some embodiments as set forth in the appended claims.

[0094]

[0103] Furthermore, note that individual embodiments may be described as processes shown as flowcharts, flow diagrams, data flow diagrams, structural diagrams, or block diagrams. While flowcharts may describe processes as sequential, many processes can be executed in parallel or simultaneously. Moreover, the order of processes can be rearranged. A process terminates when its process is completed, but it may have additional steps not shown in the diagram. A process can correspond to a method, function, procedure, subroutine, subprogram, etc. If a process corresponds to a function, its termination may correspond to the function's return to the calling function or the main function.

[0095]

[0104] The term “computer-readable medium” includes, but is not limited to, portable or fixed storage devices, optical storage devices, wireless channels, and various other media capable of storing, holding, or carrying instructions (one or more) and / or data. A code segment or machine-executable instruction can represent a procedure, function, subprogram, program, routine, subroutine, module, software package, class, or any combination of instructions, data structures, or program statements. A code segment can be coupled to another code segment or hardware circuit by passing information, data, arguments, parameters, or memory contents. Information, arguments, parameters, data, etc., can be passed, transferred, or transmitted via any suitable means, including memory sharing, message passing, token passing, network transmission, etc.

[0096]

[0105] Furthermore, the embodiments may be implemented by hardware, software, firmware, middleware, microcode, hardware description language, or any combination thereof. When implemented by software, firmware, middleware, or microcode, program code or code segments for performing the required tasks may be stored in a machine-readable medium. A processor(s) can then perform the required tasks.

[0097]

[0106] While the features described in the above specification are explained with reference to specific embodiments, it should be noted that not all embodiments are limited thereto. Various features and aspects of several embodiments can be used individually or in combination. Furthermore, embodiments can be used in any number of environments and applications beyond those described herein without departing from the broader spirit and scope of this specification. Accordingly, this specification and the drawings are considered illustrative and not limiting.

[0098]

[0107] Furthermore, the method has been described in a specific order for illustrative purposes. It should be understood that in alternative embodiments, the method may be performed in an order different from that described. It should also be understood that the method described above may be embodied in a sequence of machine-executable instructions that can be executed by hardware components or used to cause a machine, such as a general-purpose or special-purpose processor or logic circuit programmed for the instructions, to execute the method. These machine-executable instructions may be stored in one or more machine-readable media, such as a CD-ROM or other type of optical disk, a floppy diskette, ROM, RAM, EPROM, EEPROM, a magnetic card or optical card, flash memory, or other type of machine-readable media suitable for storing electronic instructions. Alternatively, the method may be executed by a combination of hardware and software.

Claims

1. A processing chamber, A chamber body including a first end and an opposing second end, A lid connected to the first end of the chamber body, A gas ring adjacent to the first end of the chamber body, A substrate support, wherein a processing area is defined between the substrate support and the lid, A port adapter system connected to the second end of the chamber body, A port adapter body that defines a plurality of openings fluidly connected to the processing region, wherein each of the plurality of openings is spaced apart along the port adapter body such that the distance between adjacent openings is within approximately 30% of the average opening spacing distance, A valve that can be individually controlled and is fluidly coupled to one or more of the aforementioned openings, System foreline and exhaust system fluid-connected to the plurality of openings Including port adapter systems and A processing chamber equipped with the following:

2. The processing chamber according to claim 1, wherein each of the plurality of openings is arranged at intervals along an arc-shaped path such that the distance between each opening is approximately 100° to approximately 140°.

3. The processing chamber according to claim 2, wherein each of the plurality of openings is arranged at intervals along an arc-shaped path such that the distance between each opening is approximately 115° to approximately 125°.

4. The processing chamber according to claim 1, wherein the port adapter system is permanently or detachably fixed to the second end of the chamber body, or is integrally formed with the chamber body.

5. Each of the plurality of openings is fluidly coupled to the exhaust system along the corresponding flow path, and each of the flow paths has a flow path length. The first opening of the plurality of openings has a first flow path to the exhaust system having a first flow path length different from the flow path lengths of one or more of the other openings of the plurality of openings. The processing chamber according to claim 1.

6. The processing chamber according to claim 5, wherein the first opening defines a diameter different from the diameter of one or more of the other openings of the plurality of openings.

7. The first flow path length is longer than the flow path length of one or more of the other openings of the plurality of openings. The first opening defines a diameter that is larger than the diameter of the other openings among the plurality of openings. The processing chamber according to claim 6.

8. The first flow path length is shorter than the flow path length of one or more other openings in the plurality of openings. The diameter of the first opening is smaller than the diameters of the other openings of the plurality of openings. The processing chamber according to claim 6.

9. The processing chamber according to claim 6, further comprising a pipe system including one or more non-linear sections.

10. A port adapter, An adapter body defining an inner surface, an outer surface, and a plurality of openings extending from the inner surface to the outer surface, wherein the distance between adjacent openings is within approximately 30% of the average opening spacing distance, A valve that is individually controllable and fluidly coupled to one or more of the aforementioned openings, A plurality of pipe systems, wherein the first pipe system of the plurality of pipe systems includes a diameter and a total path length, and the diameter, the total path length, or both the diameter and the total path length are different from the second diameter, the second total path length, or both the second diameter and the second total path length of the second pipe system of the plurality of pipe systems. A port adapter equipped with the following features.

11. The port adapter according to claim 10, wherein each of the plurality of openings is spaced apart along an arc-shaped path such that the distance between each opening is approximately 100° to approximately 140°.

12. The port adapter according to claim 11, wherein each of the plurality of openings is spaced apart along an arc-shaped path such that the distance between each opening is approximately 115° to approximately 125°.

13. Each of the plurality of openings is fluidly coupled to one of the plurality of pipe systems, and each of the plurality of pipe systems includes a flow path length between its respective opening and the end of its respective pipe system. The first opening of the plurality of openings is fluidly coupled to the first pipe system, and the first pipe system has a first flow path length that is different from the flow path lengths of one or more of the other openings of the plurality of openings. The port adapter according to claim 10.

14. The port adapter according to claim 13, wherein the first opening defines a diameter different from the diameters of the other openings in the plurality of openings.

15. The first flow path length is longer than the flow path length of one or more other openings in the plurality of openings. The first opening defines a diameter that is larger than the diameter of the one or more other openings of the plurality of openings. The port adapter according to claim 14.

16. The first flow path length is shorter than the flow path length of one or more other openings in the plurality of openings. The first opening defines a diameter smaller than that of the one or more other openings of the plurality of openings. The port adapter according to claim 14.

17. A substrate processing method, Introducing gas to the first end of the chamber body of the processing chamber, The gas is discharged through a port adapter system connected to the second end of the chamber body, wherein the port adapter system is A port adapter body defining a plurality of openings fluidly connected to the processing chamber, wherein each of the plurality of openings is arranged along the port adapter at intervals from one another; Multiple individually controllable valves fluidly coupled to the aforementioned multiple openings The system includes a port adapter system connected to the second end of the chamber body, which allows for the discharge of gas through this system. Closing the first valve of a plurality of valves while keeping at least the second valve of the plurality of valves in an open configuration, Further removal of the gas from the chamber body through the port adapter system A method that includes this.

18. The method according to claim 17, further comprising detecting residue and / or asymmetric flow paths before closing the first valve.

19. The method according to claim 18, further comprising: the port adapter system further comprising a plurality of pipe systems, each of the plurality of pipe systems being fluid-connected to one of the plurality of openings, and further comprising correcting one or more of the path length and diameter of the pipe system based on the detection of the asymmetric flow path.

20. The method according to claim 18, further comprising reopening the first valve after removing the residue.

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