Substrate Processing Equipment

Abstract

A substrate processing apparatus capable of efficiently processing substrates is provided. [Solution] A substrate processing apparatus 10 includes a process chamber 100 having a processing space 101 therein, a support unit 200 for supporting a substrate W in the processing space, a gas supply unit for supplying a processing gas to the processing space, and a microwave application unit for applying microwaves to the processing gas to generate plasma, the microwave application unit being disposed on top of the support unit and including a transmission plate 310 for radiating the microwaves into the processing space, a first waveguide 330 disposed on top of the transmission plate, and a first power source 370 for applying the microwaves to the first waveguide, the first waveguide being provided in a ring shape.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus for plasma processing a substrate. [Background technology]

[0002] Plasma is a gas state that is ionized by ions, radicals, and electrons. Plasma can be generated by very high temperatures, strong electric fields, or RF electromagnetic fields. Various processes in semiconductor device manufacturing are carried out using plasma.

[0003] 1 is a schematic diagram of a typical substrate processing apparatus for processing a substrate using microwaves. Referring to FIG. 1, a substrate (W) is supported in a processing space 1001 of a process chamber 1000, and a processing gas supplied into the processing space 1001 is excited using microwaves to generate plasma to process the substrate (W). An antenna plate 1100 having a slot 1102 formed therein is provided on an upper region of the substrate (W). A dielectric plate 1200 is disposed on the upper portion of the antenna plate 1100, and a transmission plate 1300 is disposed on the lower portion of the antenna plate 1100. When microwaves are applied to the antenna plate 1100, the microwaves are propagated along the radial direction of the antenna plate 1100, and then transmitted to the processing space 1001 via the slot 1102 and the transmission plate 1300.

[0004] 1, structural complexity is involved due to components disposed in the upper portion of the processing space 1001. There are many space restrictions in the upper portion of the processing space 1001. In addition, due to the structure composed of the antenna plate 1100, the dielectric plate 1200, and the transmitting plate 1300, the processing gas cannot be supplied to the upper portion of the processing space 1001. As a result, the processing gas cannot be smoothly supplied into the processing space 1001, which impairs the uniformity of the plasma formed in the processing space 1001.

[0005] Also, the antenna plate 1100 has a thin thickness to smoothly transmit microwaves toward the transmission plate 1300. The microwaves transmitted to the antenna plate 1100 generate current as they pass through the slots 1102. The current generates heat in the antenna plate 1100, causing thermal deformation in the upper structure. If a cooling structure is further installed to suppress the heat generation, the structural complexity of the upper space increases. If the heat generation is not suppressed, the antenna plate 1100 provided with a thin thickness will be deformed and will not be able to smoothly transmit microwaves to the processing space 1001. Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a substrate processing apparatus capable of efficiently processing substrates.

[0007] Another object of the present invention is to provide a substrate processing apparatus that can minimize the structural complexity of the substrate processing apparatus.

[0008] Another object of the present invention is to provide a substrate processing apparatus capable of minimizing deformation of members caused by heat generated during the transmission of microwaves.

[0009] Another object of the present invention is to provide a substrate processing apparatus capable of uniformly supplying a processing gas to a processing space in which a substrate is processed.

[0010] The object of the present invention is not limited thereto, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0011] The present invention provides an apparatus for processing a substrate, the apparatus for processing a substrate including a process chamber having a processing space therein, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a processing gas to the processing space, and a microwave application unit for applying microwaves to the processing gas to generate plasma, the microwave application unit including a transmission plate disposed on an upper portion of the support unit for radiating the microwaves into the processing space, a first waveguide disposed on an upper portion of the transmission plate, and a first power source for applying the microwaves to the first waveguide, the first waveguide may be provided in a ring shape.

[0012] According to one embodiment, the first waveguide may be provided in a ring shape based on the center of the transmission plate, and may be connected to the first power source at a position spaced apart from the center of the transmission plate when viewed from above.

[0013] According to an embodiment, the first waveguide may be positioned to face an edge region of the transmission plate and may have a portion cut out.

[0014] According to one embodiment, the first power source may be coupled to a surface of the first waveguide adjacent to a cut surface of the first waveguide.

[0015] According to an embodiment, a plurality of first slots may be formed on a lower surface of the first waveguide, and the first slots may be arranged to be spaced apart from each other along a circumferential direction of the first waveguide.

[0016] According to one embodiment, the first slots may be arranged in a plurality of rows when the first waveguide is viewed from the front cross section.

[0017] According to an embodiment, the microwave application unit may further include a second waveguide disposed in an area including a center of the transmission plate on the upper side of the transmission plate, and a second power source configured to apply the microwave to the second waveguide, and at least one second slot may be formed in a lower surface of the second waveguide.

[0018] According to an embodiment, the strength of the microwave applied from the first power source to the first waveguide may be different from the strength of the microwave applied from the second power source to the second waveguide.

[0019] According to one embodiment, a gas channel through which the process gas flows is formed in the transmission plate, and the gas channel may be formed at a position that does not overlap with the first waveguide and the second waveguide when viewed from above.

[0020] According to an embodiment, the first waveguide is provided to surround a portion of an upper edge region of the transmission plate, and the microwave application unit is provided to surround another portion of the upper edge region of the transmission plate and is combined with the first waveguide to form an annular ring shape, and may further include a third waveguide having a plurality of third slots formed on a lower surface thereof, and a third power source that applies the microwaves to the third waveguide.

[0021] According to an embodiment, the first waveguide may be made of a metal material, and the transmission plate may be made of a material including quartz.

[0022] The present invention also provides an apparatus for processing a substrate, the apparatus for processing a substrate including a chamber having a processing space formed therein, a support unit for supporting a substrate in the processing space, and a microwave application unit for applying microwaves to a processing gas supplied to the processing space to generate plasma, the microwave application unit including a transmission plate disposed on an upper portion of the support unit and transmitting a first microwave to the processing space, a first waveguide disposed on an upper portion of the transmission plate and through which the first microwave flows, and a first power source for applying the first microwave to the first waveguide, a plurality of first slots through which the first microwave flows are formed on a lower surface of the first waveguide through the transmission plate, and the first slots may be disposed to be spaced apart from each other along a circumferential direction of the first waveguide.

[0023] According to one embodiment, the first slots may be arranged in a plurality of ring shapes.

[0024] According to an embodiment, the first waveguide is positioned to face an edge region of the transmission plate, and may be provided in a discontinuous ring shape with a portion cut off.

[0025] According to an embodiment, the microwave application unit may further include a second waveguide disposed on an upper portion of the transmission plate in an area including a center of the transmission plate, and a second power source configured to apply a second microwave to the second waveguide, and at least one slot may be formed in a lower surface of the second waveguide.

[0026] According to an embodiment, the first waveguide is provided to surround a portion of an upper edge region of the transmission plate, and the microwave application unit is provided to surround another portion of the upper edge region of the transmission plate, and may further include a third waveguide combined with the first waveguide to form an annular ring shape, having a plurality of third slots formed on a lower surface thereof, and a third power source to apply a third microwave to the third waveguide.

[0027] According to an embodiment, an upper surface of the transmitting plate may be in contact with the first waveguide, the second waveguide, and the third waveguide, respectively.

[0028] According to one embodiment, a gas channel through which the process gas flows is formed in the transmission plate, and the gas channel may be formed at a position where the first waveguide, the second waveguide, and the third waveguide do not overlap each other when viewed from above.

[0029] The present invention also provides an apparatus for processing a substrate, the apparatus for processing a substrate including a process chamber having a processing space formed therein, a support unit for supporting a substrate within the processing space, a gas supply unit for supplying a processing gas to the processing space, a transmission plate disposed on an upper portion of the support unit, a first waveguide disposed on an upper portion of the transmission plate and having a plurality of first slots formed on a lower surface thereof, a second waveguide disposed on an upper portion of the transmission plate in an area including a center of the transmission plate and having at least one second slot formed on a lower surface thereof, a first power source for applying a first microwave to the first waveguide, and a second power source for applying a second microwave to the second waveguide, the first waveguide may have a ring shape with a portion thereof cut off.

[0030] According to one embodiment, a gas channel through which the process gas flows is formed in the transmission plate, and the gas channel may be formed at a position that does not overlap with the first waveguide and the second waveguide when viewed from above. Effect of the Invention

[0031] According to an embodiment of the present invention, substrates can be processed efficiently.

[0032] Furthermore, according to an embodiment of the present invention, the structural complexity of the substrate processing apparatus can be minimized.

[0033] In addition, according to an embodiment of the present invention, deformation of members caused by heat generated during the microwave transmission can be minimized.

[0034] Furthermore, according to an embodiment of the present invention, the processing gas can be uniformly supplied to the processing space where the substrate is processed.

[0035] The effects of the present invention are not limited to the effects described above, and effects not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings. [Brief description of the drawings]

[0036] [Figure 1] 1 is a diagram illustrating a schematic view of a typical substrate processing apparatus. [Diagram 2] 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 3] 3 is a perspective view showing a schematic view of a transmission plate and a first waveguide according to an embodiment of FIG. 2. [Figure 4] 4 is a diagram illustrating a schematic view of the transmission plate and the first waveguide of FIG. 3 as viewed from above. [Diagram 5] 5a and 5b are diagrams showing the flow of microwaves through the first waveguide and the transmission plate in FIG. 3. [Figure 6] 3 is a diagram illustrating a first waveguide according to another embodiment of FIG. 2 viewed from above. [Figure 7] 3 is a diagram showing a schematic view of a first waveguide according to another embodiment of FIG. 2 as viewed from above. [Figure 8] 4 is a schematic view of a substrate processing apparatus according to another embodiment of the present invention; [Figure 9] FIG. 9 is a perspective view showing a schematic view of a transmission plate and a waveguide according to an embodiment of FIG. 8. [Figure 10] 10 is a diagram showing a schematic view of the transmission plate and the waveguide of FIG. 9 as viewed from above. [Figure 11] 9 is a diagram illustrating a schematic view of a transmission plate and a waveguide according to another embodiment of FIG. 8. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0037] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited to the embodiments described below. The embodiments are provided to more completely explain the present invention to those having average knowledge in the art. Therefore, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

[0038] Terms such as "first" and "second" may be used to describe various components, but the components should not be limited by the terms. The terms may be used to distinguish one component from another. For example, a first component may be named as a second component, and similarly, a second component may be named as a first component, without departing from the scope of the present invention.

[0039] Hereinafter, the preferred embodiment of the present invention will be described in detail with reference to FIGS.

[0040] 2 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 2, a substrate processing apparatus 10 processes a substrate (W). The substrate processing apparatus 10 can process the substrate (W) using plasma. For example, the substrate processing apparatus 10 can perform an etching process for removing a thin film on the substrate (W), an ashing process for removing a photoresist film, a deposition process for forming a thin film on the substrate (W), or a dry cleaning process using plasma.

[0041] Alternatively, the substrate processing apparatus 10 may perform an annealing process on the substrate (W) using hydrogen plasma. However, the plasma processing process performed by the substrate processing apparatus 10 is not limited thereto and may be variously modified from known plasma processing processes. The substrate (W) carried into the substrate processing apparatus 10 may be a substrate (W) on which a processing process has been partially performed. For example, the substrate (W) carried into the substrate processing apparatus 10 may be a substrate (W) on which an etching process or a photolithography process has been performed.

[0042] The substrate processing apparatus 10 may include a process chamber 100 , a supporting unit 200 , a microwave applying unit 300 , and a gas supplying unit 400 .

[0043] The process chamber 100 may include a body 110 and a cover 120. The body 110 may have an open top and an internal space. For example, the body 110 may have an internal space and an open top cylindrical shape. The cover 120 may be placed on the top of the body 110. The cover 120 may close the open top of the body 110. For example, the cover 120 may be provided in a cylindrical shape with an open bottom. The body 110 and the cover 120 may be combined with each other to define the process chamber 100. The cover 120 may be provided with a step on the inside of the lower end so that the upper space has a larger radius than the lower space. An outer end of a transmission plate 310 (described later) may be disposed in the step on the inside of the lower end of the cover 120.

[0044] The process chamber 100 has a processing space 101 therein. The processing space 101 is provided as a space formed by combining a body 110, a cover 120, and a transmission plate 310 (described later) with each other. The processing space 101 provides a space in which a substrate (W) is processed.

[0045] However, unlike the above example, the process chamber 100 according to an embodiment of the present invention may not be provided with the cover 120. For example, the body 110 and the transmission plate 310 may be combined with each other to provide the processing space 101. The body 110 has an open upper surface, and the transmission plate 310 may seal the open upper surface of the body 110. The outer end of the transmission plate 310 may be combined with the outer upper end of the body 110 to define the processing space 101.

[0046] An opening (not shown) is formed in a sidewall of the process chamber 100, through which a substrate (W) is transferred from or into the processing space 101. The opening (not shown) may be selectively covered by a door (not shown). For example, the opening (not shown) may be formed in one sidewall of the body 110. An inner wall of the process chamber 100 may be coated. For example, the inner wall of the process chamber 100 may be coated with a material including quartz.

[0047] An exhaust hole 130 is formed at the bottom of the process chamber 100. For example, the exhaust hole 130 may be formed at the bottom of the body 110. The exhaust hole 130 may be connected to an exhaust line 140. The exhaust line 140 exhausts particles, process by-products, etc. flowing through the processing space 101. One end of the exhaust line 140 is connected to the exhaust hole 130, and the other end of the exhaust line 140 is connected to a decompression unit (not shown) that provides negative pressure. The decompression unit (not shown) may be a pump. However, the present invention is not limited thereto, and the decompression unit (not shown) may be provided in various modified forms using a known device that provides negative pressure.

[0048] The support unit 200 is located within the processing space 101. The support unit 200 supports the substrate (W) within the processing space 101. According to one example, the support unit 200 may be an ESC capable of chucking the substrate (W) using an electrostatic force. Alternatively, the support unit 200 may physically support the substrate (W) by mechanical clamping. Alternatively, the support unit 200 may not provide a means for fixing the substrate (W), and the substrate (W) may be placed on the support unit 200.

[0049] The support unit 200 may include a body 210 and a heater 220. The body 210 supports a substrate (W). An upper surface of the body 210 may be provided as a support surface for supporting the substrate (W). The substrate (W) is seated on the upper surface of the body 210. The body 210 may be provided as a dielectric substance. The body 210 may be provided as a dielectric plate having a generally circular disk shape. According to an example, the diameter of the upper surface of the body 210 may be provided relatively larger than the diameter of the substrate (W).

[0050] The heater 220 heats the substrate (W). The heater 220 can heat the substrate (W) supported on the upper surface of the body 210. The heater 220 heats the substrate (W) by increasing the temperature of the body 210. For example, the heater 220 can be provided as a heating element that generates heat by resisting an applied current. The heater 230 can be a heating element such as tungsten. However, the type of the heater 230 is not limited thereto, and can be provided as a known heating element with various modifications.

[0051] The generated heat is transferred to the substrate (W) through the body 210. The substrate (W) can be maintained at a set temperature required for the process by the heat generated by the heater 220. In addition, the heater 220 can increase the temperature of the body 210 to prevent impurities (e.g., oxide film) separated from the substrate (W) during processing from being re-adhered to the substrate (W).

[0052] Although not shown, according to one embodiment, a plurality of heaters 220 may be provided as spiral coils. The heaters 220 may be provided in different regions of the body 210. For example, a heater 220 for heating the central region of the body 210 and a heater 220 for heating the edge region of the body 210 may be provided, and the degree of heat generated by these heaters 220 may be independently controlled.

[0053] Figure 3 is a perspective view showing a schematic view of a transmission plate and a first waveguide according to an embodiment of Figure 2. Figure 4 is a view showing a schematic view of a transmission plate and a first waveguide as viewed from above in Figure 3. Hereinafter, a microwave application unit according to an embodiment of the present invention will be described in detail with reference to Figures 2 to 4.

[0054] The microwave application unit 300 generates plasma in the processing space 101. The microwave application unit 300 applies microwaves to a processing gas supplied to the processing space 101 to excite the processing gas in the processing space 101. The microwave application unit 300 may include a transmission plate 310, a waveguide 320, and a power source 360.

[0055] The transmission plate 310 is disposed on the upper part of the support unit 200. The transmission plate 310 may be combined with the body 110 and the cover 120 to define the processing space 101. The transmission plate 310 functions as an upper wall of the processing space 101. The transmission plate 310 may be provided in a plate shape. For example, the transmission plate 310 may be provided in a generally circular plate shape. The outer lower end of the transmission plate 310 may be disposed in a stepped space of the cover 120. The upper and lower surfaces of the transmission plate 310 may be provided flat. However, the present invention is not limited thereto, and the upper surface of the transmission plate 310 may be provided flat, the central region of the lower surface of the transmission plate 310 may be provided flat, and the edge region of the lower surface of the transmission plate 310 may be formed to protrude downward.

[0056] The transmission plate 310 is made of a material that can transmit microwaves. The transmission plate 310 is made of a material that can radiate microwaves in the processing space 101. In one example, the transmission plate 310 may be made of quartz. Alternatively, the transmission plate 310 may be made of aluminum oxide (Al 2 O 3 The dielectric material may be provided by a dielectric material such as ceramics, such as aluminum nitride (AlN), sapphire, or silicon nitride (SiN).

[0057] A gas channel 312 is formed inside the transmission plate 310. The gas channel 312 may be provided as a groove penetrating from the upper end to the lower end of the transmission plate 310. The gas channel 312 may be connected to a gas line 440, which will be described later. A process gas supplied from a gas supply unit 400, which will be described later, may be supplied to the process space 101 by sequentially passing through the gas line 440 and the gas channel 312.

[0058] A plurality of gas channels 312 may be provided. The plurality of gas channels 312 may be formed in an area including the center of the transmission plate 310 and in an edge area of ​​the transmission plate 310. The plurality of gas channels 312 may be formed to be spaced apart from each other along the periphery of the transmission plate 310. The plurality of gas channels 312 are formed at positions that do not overlap with the waveguides 320, which will be described later, when viewed from above.

[0059] The waveguide 320 is disposed on the upper part of the transmission plate 310. The waveguide 320 is positioned so as to be in contact with the transmission plate 310. For example, the lower surface of the waveguide 320 may be in contact with the upper surface of the transmission plate 310. The waveguide 320 may be made of a metal material. For example, the waveguide 320 may be made of a material including copper or aluminum. The inner surface of the waveguide 320 is made of a conductor. For example, the inner surface of the waveguide 320 may be made of gold or silver. The waveguide 320 may be provided in a tubular shape having a polygonal cross section. A passage is formed inside the waveguide 320. Microwaves applied from a power source 360, which will be described later, may be transmitted to the transmission plate 310 through the inner passage of the waveguide 320.

[0060] The waveguide 320 may include a first waveguide 330. The first waveguide 330 may have a first portion 331, a second portion 332, and a third portion 333. The first portion 331, the second portion 332, and the third portion 333 may be integrally formed.

[0061] The first portion 331 may be provided in a ring shape. The first portion 331 may have an annular ring shape based on the center of the transmission plate 310. The first portion 331 may be disposed at a position facing an edge region of the transmission plate 310 when viewed from above. The first portion 331 is formed such that a portion of the first portion 331 is cut off. The first portion 331 may be formed in a discontinuous ring shape.

[0062] A first slot 335 is formed in a bottom surface of the first portion 331. The first slot 335 may be a through slit penetrating the bottom surface of the first portion 331. Alternatively, the first slot 335 may be filled with a material that transmits microwaves. The length direction of the first slot 335 may be formed in a direction from one side of the first portion 331 to the opposite side.

[0063] A plurality of first slots 335 may be provided. The plurality of first slots 335 may be arranged to be spaced apart from each other along a circumferential direction of the first portion 331. The plurality of first slots 335 may be arranged in a plurality of rows when viewed from a front cross section of the first portion 331. Thus, the plurality of first slots 335 may be arranged in a plurality of ring shapes in the first portion 331. Unlike as illustrated, the plurality of first slots 335 may be arranged at different angles from each other with respect to the center of the transmission plate 310.

[0064] The second portion 332 may extend from the first portion 331. For example, the second portion 332 may extend in an upward direction from an upper surface of the first portion 331. The second portion 332 may be coupled to an upper surface of the first portion 331 at a position adjacent to a cut surface formed in the first portion 331.

[0065] The third portion 333 may extend from the second portion 332. For example, the third portion 333 may extend horizontally from an upper surface of the second portion 332. The third portion 333 may be connected to a first power source 370, which will be described later.

[0066] The power source 360 ​​may include a first power source 370 and a first matching network 372. The first power source 370 generates a first microwave. For example, the first microwave generated by the first power source 370 may have a frequency of approximately 2.3 GHz to 2.5 GHz. The first power source 370 may be coupled to the first waveguide 330. The first matching network 372 is provided in the third section 333. The first matching network 372 is provided between the first power source 370 and the second section 332. The first matching network 372 may match the first microwave propagated through the first power source 370 at a predetermined frequency.

[0067] 5a and 5b are diagrams showing the flow of microwaves in the first waveguide and the transmission plate of FIG. 3. Referring to FIG. 5a and 5b, the first microwave generated by the first power source 370 may be transmitted to the first waveguide 330. The first microwave generated by the first power source 370 may be propagated to the first portion 331 through the first matching network 372, the third portion 333 and the second portion 332 of the first waveguide 330. The first microwave supplied to the first portion 331 may be propagated along the first portion 331 formed in a ring shape to the cut portion of the first portion 331. The first microwave is propagated to the inner space of the first portion 331 and propagates to the transmission plate 310 through the first slot 335 formed on the lower surface of the first portion 331. The first microwave may be radiated from the transmission plate 310 and propagated to the processing space 101.

[0068] According to an embodiment of the present invention, the microwave application unit 300 may include a transmission plate 310 disposed at the upper part of the processing space 101, a waveguide 320 disposed at the upper part of the transmission plate 310, and a power source 360 ​​for transmitting microwaves to the waveguide 320. Since the waveguide 320 directly transmits microwaves applied from the power source 360 ​​to the transmission plate 310, the structural complexity of the upper part of the processing space 101 where the microwave application unit 300 is disposed may be minimized. That is, the microwave application unit 300 may be provided as an integral unit for transmitting microwaves to the processing space 101 without installing a separate antenna member. Also, unlike the general substrate processing apparatus described with reference to FIG. 1, the first slot 335 formed on the lower surface of the waveguide 320 and the transmission plate 310 simultaneously perform the role of an existing antenna plate provided with a thin thickness, thereby minimizing heat generated in the antenna plate. Therefore, it is possible to minimize thermal deformation of the microwave application unit 300 due to heat generated during the microwave transmission, and therefore it is possible to uniformly transmit microwaves to the processing space 101 and to uniformly form plasma in the processing space 101.

[0069] Referring again to FIG. 2, the gas supply unit 400 supplies a process gas to the processing space 101. The gas supply unit 400 may include a gas supply source 420 and a gas line 440. The gas supply source 420 may store and / or supply a process gas. The process gas may include hydrogen. The gas line 440 is connected to the gas supply source 420 and the gas channel 312. One end of the gas line 440 may be connected to the gas supply source 420, and the other end of the gas line may be connected to the gas channel 312. The process gas supplied from the gas supply source 420 may be supplied to the processing space 101 through the gas line 440 and the gas channel 312. For example, the process gas may be supplied toward an upper portion of a substrate (W) supported by the supporting unit 200.

[0070] In the above example, the other end of the gas line 440 is connected to the gas channel 312 formed in the transmission plate 310. However, the present invention is not limited to this example, and the other end of the gas line 440 may be branched. The other ends of the branched gas lines 440 may be respectively coupled to the gas channel 312 and one sidewall of the process chamber 100. The other end of the gas channel 312 coupled to one sidewall of the process chamber 100 may supply a process gas toward the processing space 101 at a side of the processing space 101. The other end of the gas channel 312 may be coupled to a plurality of supporting points along a circumferential direction of one sidewall of the process chamber 100.

[0071] According to the above-described embodiment of the present invention, the processing gas can be supplied toward the upper part of the processing space 101 along the gas channels 312 formed in the transmission plate 310. This can efficiently generate plasma acting on the substrate (W) in the processing space 101, thereby improving the processing efficiency of the substrate (W).

[0072] Figures 6 and 7 are diagrams showing a top view of a first waveguide according to another embodiment of Figure 2. The first waveguide according to the embodiment described below has a structure similar to that of the first waveguide described with reference to Figures 2 to 4, except where otherwise described, and a description of the overlapping configuration will be omitted.

[0073] 6, a first slot 335 is formed on the bottom surface of the first portion 331. The first slot 335 may be a through slit penetrating the top and bottom surfaces of the first portion 331. Alternatively, the first slot 335 may be filled with a material that transmits microwaves. The length direction of the first slot 335 may be formed in a direction parallel to the other side of the first portion 331 facing the first slot. A plurality of first slots 335 may be provided. The plurality of first slots 335 may be arranged to be spaced apart from each other along the circumferential direction of the first portion 331. Unlike as illustrated, the plurality of first slots 335 may be arranged at different angles from each other with respect to the center of the transmission plate 310.

[0074] 7, the length direction of the first slots 335 formed on the bottom surface of the first portion 331 may be formed along the circumferential direction of the first portion 331. For example, the first slots 335 may have a length direction parallel to one side of the first portion 331. A plurality of the first slots 335 may be provided. The plurality of first slots 335 may be arranged to be spaced apart from each other along the circumferential direction of the first portion 331. The plurality of first slots 335 may be arranged in a plurality of rows when viewed from the front cross section of the first portion 331. Thus, the plurality of first slots 335 may be arranged in a plurality of ring shapes in the first portion 331. Unlike as illustrated, the plurality of first slots 335 may be arranged at different angles from each other with respect to the center of the transmission plate 310.

[0075] Figure 8 is a schematic view of a substrate processing apparatus according to another embodiment of the present invention. Figure 9 is a schematic perspective view of a transmission plate and a waveguide according to the embodiment of Figure 8. Figure 10 is a schematic view of the transmission plate and the waveguide of Figure 9 as viewed from above. Hereinafter, a substrate processing apparatus according to another embodiment of the present invention will be described in detail with reference to Figures 8 to 10.

[0076] The waveguide 320 may include a first waveguide 330, a second waveguide 340, and a third waveguide 350. The first waveguide 330 may have a first portion 331, a second portion 332, and a third portion 333. The first portion 331, the second portion 332, and the third portion 333 may be integrally formed.

[0077] The first portion 331 may be generally ring-shaped. The first portion 331 may be cut into a ring shape. The first portion 331 may be semicircularly shaped at a position facing the edge region of the transmission plate 310 with respect to the center of the transmission plate 310. For example, the first portion 331 may be provided to surround a part of the upper edge region of the transmission plate 310. The second portion 332 extends from the first portion 331, and the third portion 333 extends from the second portion 332. The second portion 332 and the third portion 333 are provided in a manner similar to the description of the second portion 332 and the third portion 333 described with reference to FIGS. 2 to 4, and therefore a description thereof will be omitted.

[0078] The second waveguide 340 may be disposed in a region including the center of the transmission plate 310. For example, the second waveguide 340 may be disposed on the upper surface of the region including the center of the transmission plate 310. The second waveguide 340 may be disposed to be spaced apart from the first waveguide 330 and a third waveguide 350 described below. A gas line 440 may be disposed in a space between the first waveguide 330, the second waveguide 340, and the third waveguide 350 spaced apart from each other. A gas channel 312 may be formed on the upper surface of the transmission plate 310 facing the spaced apart positions of the first waveguide 330, the second waveguide 340, and the third waveguide 350. The gas channel 312 may be formed at a position where the first waveguide 330, the second waveguide 340, and the third waveguide 350 do not overlap each other when viewed from above.

[0079] A lower surface of the second waveguide 340 may be in contact with an upper surface of the transmission plate 310. A second slot 345 is formed in the lower surface of the second waveguide 340. The second slot 345 may penetrate the lower surface of the second waveguide 340. Alternatively, the second slot 345 may be filled with a material through which the second microwave passes, which will be described later. At least one second slot 345 may be provided. The second slot 345 may be provided at a position overlapping with the center of the substrate (W) supported by the support unit 200 when viewed from above.

[0080] The third waveguide 350 may have a first portion 351, a second portion 352, and a third portion 353. The first portion 351, the second portion 352, and the third portion 353 may be integrally formed. The first portion 351 may be provided in a generally ring shape. The first portion 351 may be provided in a cut ring shape. The first portion 351 may be provided in a semicircular shape at a position facing the edge region of the transmission plate 310 with respect to the center of the transmission plate 310. For example, the first portion 351 may be provided to surround another part of the upper edge region of the transmission plate 310.

[0081] The first portion 351 of the third waveguide 350 and the first portion 331 of the first waveguide 330 may be combined with each other to form a ring shape on the upper part of the transmission plate 310. One end of the first portion 351 of the third waveguide 350 may be disposed to face one end of the first portion 331 of the first waveguide 330 at a predetermined distance. Also, the other end of the first portion 351 of the third waveguide 350 may be disposed to face the other end of the first portion 331 of the first waveguide 330 at a predetermined distance.

[0082] A third slot 355 is formed on the bottom surface of the first portion 351. The third slot 355 may be a through slit penetrating the bottom surface of the first portion 351. Optionally, the third slot 355 may be filled with a third microwave transmitting material described below. The length, arrangement, and / or shape of the third slot 355 may be similar to those of the first slot 335. Therefore, to avoid redundant description, the description of the length, arrangement, and / or shape of the third slot 355 will be omitted.

[0083] The second portion 352 may extend from the first portion 351. For example, the second portion 352 may extend in an upward direction from an upper surface of the first portion 351. The second portion 352 may be positioned on an imaginary line passing through the center of the transmission plate 310. For example, the second portion 332 of the first waveguide 330 may be positioned to face the second portion 352 of the third waveguide 350 on the imaginary line.

[0084] The third portion 353 may extend from the second portion 352. For example, the third portion 353 may extend vertically from an upper surface of the second portion 352. The third portion 353 may be connected to a third power source 390, which will be described later.

[0085] The power supply 360 may include a first power supply 370, a first matching network 372, a second power supply 380, a second matching network 382, ​​a third power supply 390, and a third matching network 392. The first power supply 370 and the first matching network 372 may be provided in a similar manner to that described with reference to FIGS.

[0086] The second power source 380 generates a second microwave. The second power source 380 may be coupled to the second waveguide 340. For example, the second microwave generated by the second power source 380 may have a frequency of approximately 0.8 GHz to 1.2 GHz. The second matching network 382 is provided in the second waveguide 340. The second matching network 382 is provided between the second power source 380 and the second waveguide 340. The second matching network 382 may match the second microwave propagated through the second power source 380 to a predetermined frequency.

[0087] The third power source 390 generates a third microwave. The third power source 390 may be coupled to the third waveguide 350. For example, the third microwave generated by the third power source 390 may have a frequency of approximately 2.3 GHz to 2.5 GHz. The third matching network 392 is provided in the third waveguide 350. The third matching network 392 is provided between the third power source 390 and the third waveguide 350. The third matching network 392 may match the third microwave propagated through the third power source 390 to a predetermined frequency.

[0088] The first microwave generated by the first power source 370 may have a first intensity. The second microwave generated by the second power source 380 may have a second intensity. And, the third microwave generated by the third power source 390 may have a third intensity. The first intensity, the second intensity, and the third intensity may have different magnitudes from each other. Alternatively, the first intensity and the third intensity may have magnitudes corresponding to each other, and the second intensity may have a smaller magnitude than the first intensity and the third intensity.

[0089] According to the embodiment of the present invention, the first and third waveguides 330 and 350 are disposed in the upper edge region of the transmission plate 310, and the second waveguide 340 is disposed in the region including the center of the transmission plate 310, so that microwaves can be uniformly transmitted from each waveguide 320 to the processing space 101. In addition, independent microwave sources (e.g., a first power source 370, a second power source 380, and a third power source 390) are connected to the first waveguide 330, the second waveguide 340, and the third waveguide 350, respectively, so that microwaves of different magnitudes can be supplied according to the magnitude of plasma formed in each region of the processing space 101, thereby improving the uniformity of plasma in the processing space 101.

[0090] 11 is a schematic diagram of a transmission plate and a waveguide according to another embodiment of the present invention shown in FIG 8. Referring to FIG 11, the waveguide 320 may include a first waveguide 330 and a second waveguide 340.

[0091] The first waveguide 330 may have a first portion 331, a second portion 332, and a third portion 333. The first portion 331, the second portion 332, and the third portion 333 may be integrally formed. The first portion 331 may be provided in a ring shape. The first portion 331 may have an annular ring shape based on the center of the transmission plate 310. The first portion 331 may be disposed at a position facing an edge region of the transmission plate 310 when viewed from above. The first portion 331 is formed such that a portion of it is cut off. The first portion 331 may be formed in a discontinuous ring shape.

[0092] The second portion 332 may extend from the first portion 331. For example, the second portion 332 may extend in an upward direction from an upper surface of the first portion 331. The second portion 332 may be coupled to an upper surface of the first portion 331 at a position adjacent to a cut surface formed in the first portion 331.

[0093] The third portion 333 may extend from the second portion 332. For example, the third portion 333 may extend horizontally from an upper surface of the second portion 332. The third portion 333 may be connected to the first power source 370.

[0094] The second waveguide 340 may be disposed in a region including the center of the transmission plate 310. For example, the second waveguide 340 may be disposed on the upper surface of the region including the center of the transmission plate 310. The second waveguide 340 may be disposed to be spaced apart from the first waveguide 330. A gas line 440 may be disposed in a space between the first waveguide 330 and the second waveguide 340 spaced apart from each other. A gas channel 312 may be formed on the upper surface of the transmission plate 310 facing the spaced apart positions of the first waveguide 330 and the second waveguide 340. The gas channel 312 may be formed at a position where the first waveguide 330 and the second waveguide 340 do not overlap each other when viewed from above.

[0095] The above detailed description is illustrative of the present invention. The above content shows and describes a preferred embodiment of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications can be made within the scope of the concept of the invention disclosed in this specification, within the scope of equivalents to the disclosed content, and / or within the scope of the technology or knowledge of the art. The described embodiments are intended to explain the best conditions for realizing the technical ideas of the present invention, and various modifications required for the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiment. The appended claims should be interpreted to include other embodiments. [Explanation of symbols]

[0096] 100 Process Chamber 101 Processing Space 110 Body 120 Cover 200 Support Units 300 Microwave application unit 310 Transparent plate 3 12 Gas Channel 320 Waveguide 330 First Waveguide 340 Second Waveguide 350 3rd Waveguide 360 power supply 370 1st power supply 380 2nd power supply 390 3rd power supply 335 1st Slot 345 2nd Slot 355 3rd Slot 400 Gas Supply Unit

Claims

1. In an apparatus for processing a substrate, a process chamber having a processing space therein; a supporting unit for supporting a substrate in the processing space; a gas supply unit for supplying a processing gas in the processing space; and A microwave application unit applies microwaves to the processing gas to generate plasma, The microwave application unit includes: a transmission plate disposed on an upper portion of the support unit and configured to radiate the microwave into the processing space; a first waveguide disposed above the transmission plate; and a first power source that applies the microwaves to the first waveguide; The first waveguide is provided in a ring shape; The transmission plate is provided with a gas channel through which the processing gas flows, The gas channel is formed at a position not overlapping with the first waveguide, A plurality of first slots are formed on a lower surface of the first waveguide, the first slots being The substrate processing apparatus, wherein the first waveguides are arranged in a plurality of rows when viewed from the front cross section.

2. The first waveguide is It is provided in a ring shape based on the center of the transmission plate, 2. The substrate processing apparatus of claim 1, wherein the first power source is connected to the transmission plate at a position spaced apart from a center of the transmission plate when viewed from above.

3. The first waveguide is 3. The substrate processing apparatus according to claim 2, wherein the transmission plate is positioned to face an edge region of the transmission plate, and a portion of the transmission plate is cut off.

4. The first power source is 4. The substrate processing apparatus of claim 3, wherein the first waveguide is coupled to a surface of the first waveguide adjacent to the cut surface of the first waveguide.

5. A plurality of first slots are formed in a lower surface of the first waveguide, The first slot is 5. The substrate processing apparatus of claim 4, wherein the first and second waveguides are spaced apart from each other along a circumferential direction of the first waveguide.

6. The microwave application unit includes: a second waveguide disposed above the transmission plate in a region including the center of the transmission plate; and a second power source configured to apply the microwaves to the second waveguide; 2. The substrate processing apparatus of claim 1, wherein at least one second slot is formed in a lower surface of the second waveguide.

7. 7. The substrate processing apparatus of claim 6, wherein an intensity of the microwave applied from the first power source to the first waveguide is different from an intensity of the microwave applied from the second power source to the second waveguide.

8. The gas channel is 7. The substrate processing apparatus of claim 6, wherein the second waveguide is not overlapped with the first waveguide when viewed from above.

9. The first waveguide is a recess provided around a portion of an upper edge region of the transmission plate; The microwave application unit includes: a third waveguide provided to surround another portion of the upper edge region of the transmission plate, combined with the first waveguide to form an annular ring shape, and having a plurality of third slots formed on a lower surface thereof; and The substrate processing apparatus of claim 6 , further comprising a third power source for applying the microwave to the third waveguide.

10. The first waveguide is made of a metal material, 2. The substrate processing apparatus of claim 1, wherein the transmission plate is made of a material containing quartz.

11. In an apparatus for processing a substrate, a chamber having a processing space formed therein; A supporting unit for supporting a substrate within the processing space; and A microwave application unit applies microwaves to the processing gas supplied to the processing space to generate plasma, The microwave application unit includes: a transmission plate disposed on an upper portion of the support unit to transmit a first microwave to the processing space; a first waveguide disposed above the transmitting plate and through which the first microwave flows; and a first power source that applies the first microwave to the first waveguide; a plurality of first slots through which the first microwave flows are formed in the lower surface of the first waveguide; the first slots are spaced apart from one another along a circumferential direction of the first waveguide, The transmission plate is provided with a gas channel through which the processing gas flows, The gas channel is formed at a position not overlapping with the first waveguide, The substrate processing apparatus, wherein the first slots are arranged in a shape of a plurality of rings.

12. The first waveguide is The substrate processing apparatus of claim 11, wherein the recess is disposed to face an edge region of the transmission plate, and is provided in a discontinuous ring shape by cutting off a portion of the recess.

13. The microwave application unit includes: a second waveguide disposed above the transmission plate in a region including the center of the transmission plate; and a second power source configured to apply a second microwave to the second waveguide; The substrate processing apparatus of claim 12, wherein the second waveguide has at least one slot formed in a lower surface thereof.

14. The first waveguide is a recess provided around a portion of an upper edge region of the transmission plate; The microwave application unit includes: a third waveguide provided to surround another portion of the upper edge region of the transmission plate, combined with the first waveguide to form an annular ring shape, and having a plurality of third slots formed on a lower surface thereof; and The substrate processing apparatus of claim 13, further comprising a third power source that applies a third microwave to the third waveguide.

15. 15. The substrate processing apparatus of claim 14, wherein an upper surface of the transmission plate is in contact with the first waveguide, the second waveguide, and the third waveguide, respectively.

16. The gas channel is 15. The substrate processing apparatus of claim 14, wherein the second waveguide and the third waveguide are not overlapped with each other when viewed from above.

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