Improved package structure for power semiconductor modules

Abstract

An improved package structure for a power semiconductor module is provided that can significantly reduce electromagnetic radiation and is more suitable for large current applications. [Solution] The improved package structure for a power semiconductor module includes a heat dissipation base, at least one electric circuit board, at least one copper nut terminal, a plastic case sidewall, and an insulating adhesive. The electric circuit board includes at least one type of chip that constitutes the power semiconductor module. The copper nut terminal is mounted on the heat dissipation base or the electric circuit board and serves as a bridge between the external current and the internal current of the power semiconductor module. The chip is electrically connected to the copper nut terminal via multiple conductors. A filling space is formed inside the plastic case sidewall. The insulating adhesive is injected into the filling space to cover the electric circuit board, and the copper nut terminal serves to conduct current.

Description

[Technical Field]

[0001] The present invention relates to a packaging structure for an electric circuit board, and more particularly to an improved packaging structure for a power semiconductor module applied in a high current range. [Background technology]

[0002] In recent years, with the vigorous development of the electronics industry, electronic products are gradually moving towards multi-functionality and high performance. Referring to Figures 1 and 2, Figure 1 is a diagram showing the package structure of a power semiconductor module according to the prior art. Figure 2 is an exploded perspective view showing the package structure of a power semiconductor module according to the prior art. Summary of the Invention [Problem to be solved by the invention]

[0003] As shown in Figures 1 and 2, the three external connection terminals on the circuit board are rectangular pieces, and each passes through three corresponding through-holes on the outer casing, then recessed inward at 90 degrees in the same direction to form the package. This tends to make the overall volume too large, and the rectangular shape of the external connection terminals makes the negative electromagnetic effects more pronounced. [Means for solving the problem]

[0004] This invention primarily provides a power semiconductor module packaging structure, which includes a heat dissipation base, at least one electric circuit board, at least one copper nut terminal, a plastic case sidewall, and an insulating adhesive. The electric circuit board is mounted on the heat dissipation base, and the electric circuit board includes at least one chip constituting a power semiconductor module. The copper nut terminal is mounted on the heat dissipation base or the electric circuit board, and serves as a bridge between external current and internal current of the power semiconductor module, with the chip electrically connected to the copper nut terminal via multiple conductors. The plastic case sidewall is mounted above and surrounds the heat dissipation base, forming a filling space within the plastic case sidewall, the height of which is lower than the height of the copper nut terminal. An insulating adhesive is injected into the filling space to cover the electric circuit board, and the injection height of the insulating adhesive is set so as not to exceed the height of the copper nut terminal. The copper nut terminal serves the function of conducting current.

[0005] In one embodiment of the present invention, the plurality of types of chips are any one of diode chips, metal oxide semiconductor (MOS) chips, bipolar junction transistor (BJT) chips, and insulated gate bipolar transistor (IGBT) chips, or a combination of these chips.

[0006] In one embodiment of the present invention, the metal oxide semiconductor (MOS) chips, bipolar junction transistor (BJT) chips, and insulated gate bipolar transistor (IGBT) chips among the multiple types of chips are used for switching functions.

[0007] In one embodiment of the present invention, the number of the plurality of copper nut terminals is at least one.

[0008] In one embodiment of the present invention, the electrical circuit board further includes at least one electronic component connected to the chip, which cooperates with the electronic component to form the power semiconductor module. [Effects of the Invention]

[0009] The present invention also provides a power semiconductor module packaging structure, which includes a heat dissipation base, at least one electric circuit board, at least one copper nut terminal, a plastic case sidewall, and an insulating adhesive. The electric circuit board is mounted on the heat dissipation base, and the electric circuit board includes at least one chip constituting a power semiconductor module. The copper nut terminal is mounted on the heat dissipation base or the electric circuit board, and serves as a bridge between external current and internal current of the power semiconductor module. The chip is electrically connected to the copper nut terminal via multiple conductors, and the copper nut terminal functions to conduct current. The plastic case sidewall is mounted above and surrounds the heat dissipation base, forming a filled space within the plastic case sidewall, the height of which is lower than the height of the copper nut terminal. The insulating adhesive is injected into the filling space so as to cover the electric circuit board, and the injection height of the insulating adhesive is set so as not to exceed the height of the copper nut terminal. The chip is a diode chip and is used for rectification. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a diagram showing a package structure of a power semiconductor module according to the prior art; [Figure 2] FIG. 1 is an exploded perspective view showing a package structure of a power semiconductor module according to a conventional technology. [Figure 3] 1 is a diagram showing an improved packaging structure of a power semiconductor module according to the present invention; [Figure 4] 1 is a partially exploded perspective view showing an improved packaging structure for a power semiconductor module according to the present invention; [Figure 5] 10 is a diagram showing another embodiment of the improved packaging structure for a power semiconductor module according to the present invention; FIG. [Figure 6] 10 is a partially exploded perspective view showing another embodiment of the improved package structure for a power semiconductor module according to the present invention; FIG. DETAILED DESCRIPTION OF THE INVENTION

[0011] Therefore, the inventor has conducted research and development for many years to improve the inconveniences of existing products, and this invention will be introduced in detail later on as to how to achieve the most efficient functionality by using an improved packaging structure of a power semiconductor module.

[0012] Referring to FIGS. 3 to 6, FIG. 3 is a diagram illustrating an improved power semiconductor module packaging structure according to the present invention. FIG. 4 is a partially exploded perspective view illustrating the improved power semiconductor module packaging structure according to the present invention. FIG. 5 is a diagram illustrating another embodiment of the improved power semiconductor module packaging structure according to the present invention. FIG. 6 is a partially exploded perspective view illustrating another embodiment of the improved power semiconductor module packaging structure according to the present invention. As shown, a power semiconductor module packaging structure 100 includes a heat dissipation base 110, at least one electric circuit board 120, at least one copper nut terminal 130, a plastic case sidewall 140, and an insulating adhesive 160. The electric circuit board 120 is disposed on the heat dissipation base 110 and includes at least one chip 122 that constitutes a power semiconductor module. The electric circuit board 120 may be a ceramic electric circuit board. In another embodiment, the electric circuit board 120 further includes at least one electronic component connected to the chip 122, which cooperates with the electronic component to constitute the power semiconductor module. The copper nut terminal 130 is mounted on the heat dissipation base 110 or the electric circuit board 120. The copper nut terminal 130 serves as a bridge between the external current and the internal current of the power semiconductor module, and the copper nut terminal 130 functions to conduct current. The chip 122 is electrically connected to the copper nut terminal 130 via a number of conductors EL. A plastic case sidewall 140 is mounted above the heat dissipation base 110 and is hermetically sealed. A filling space 142 is formed within the plastic case sidewall 140, and the height of the plastic case sidewall 140 is lower than the height of the copper nut terminal 130. An insulating adhesive 160 is injected into the filling space 142 to cover the electric circuit board 120, and the injection height of the insulating adhesive 160 is set so as not to exceed the height of the copper nut terminal 130. Furthermore, in other embodiments, a function similar to that of encasing the electrical circuit board 120 can be realized via an outer housing.

[0013] 3 and 4, the plurality of chips 122 may be any one of diode chips, metal oxide semiconductor (MOS) chips, bipolar junction transistor (BJT) chips, and insulated gate bipolar transistor (IGBT) chips, or a combination of multiple chips thereof. The combination of multiple chips refers to a combination of any two, three, or all four chips selected from the group consisting of these. In addition, the plurality of chips 122 may further include a driver chip (driver IC) for driving the switching chips, such as a metal oxide semiconductor (MOS) chip and a bipolar junction transistor (BJT) chip, or a combination of multiple chips thereof. 5 and 6, the metal oxide semiconductor (MOS) chip, bipolar junction transistor (BJT) chip, and insulated gate bipolar transistor (IGBT) chip of the above-mentioned multiple types of chips are mainly used for, but not limited to, a switching function, and the diode chip of the above-mentioned type of chip 122 is mainly used for, but not limited to, a rectifying function (e.g., full bridge or half bridge).Although only one copper nut terminal 130 is shown in the figure, it can be expanded to multiple copper nut terminals 130 (for example, three or more, as shown in FIG. 6 ), allowing for a larger current to flow and a rectifying function to be performed together with a diode chip, or a metal oxide semiconductor (MOS) chip, a bipolar junction transistor (BJT) chip, or an insulated gate bipolar transistor (IGBT) chip to perform a switching function.

[0014] 5 and 6, the power semiconductor module package improvement structure 100 further includes at least one set of control terminals 150, which are used to receive at least one external control signal to determine whether the plurality of chips 122 are conductive. In this embodiment, the number of the plurality of copper nut terminals 130 is three, and the number of sets of control terminals 150 is two (each set has at least one). In another embodiment, the electric circuit board 120 further includes at least one electronic component, which is connected to the chip 122, the control terminals 150, or other components, and cooperates with the electronic component to form the power semiconductor module.

[0015] Compared with the architectures of the known art, the architectures of Figures 4 and 6 of the present invention can further reduce the electromagnetic radiation effect and are more suitable for high power or high current applications (e.g., above 400 amperes, but not limited thereto).

[0016] To sum up, the improved package structure of the power semiconductor module as proposed in the present invention can bring about the following effects. 1. Significantly reduces electromagnetic radiation, and 2. More suitable for high current applications. [Explanation of symbols]

[0017] 100: Improved package structure for power semiconductor module 110: Heat dissipation base 120: Electric circuit board 122: Chip 130: Copper nut terminal 140: Plastic case side wall 142: Filling space 150: Control terminal 160: Insulating adhesive EL: Conductor

Claims

1. A package improvement structure for a power semiconductor module, comprising: a heat dissipation base; at least one electric circuit board provided on the heat dissipation base; at least one copper nut terminal provided on the heat dissipation base or on the electric circuit board; a plastic case sidewall provided above and surrounding the heat dissipation base; and an insulating adhesive, the electric circuit board includes at least one type of chip that constitutes a power semiconductor module, the copper nut terminal is used as a bridge between an external current and an internal current of the power semiconductor module, and the chip is electrically connected to the copper nut terminal via a number of conductors; A filling space is formed inside the side wall of the plastic case, and the height of the side wall of the plastic case is lower than the height of the copper nut terminal. the insulating adhesive is injected into the filling space so as to cover the electric circuit board, and the injection height of the insulating adhesive is set so as not to exceed the height of the copper nut terminal; The improved package structure for a power semiconductor module is characterized in that the copper nut terminal is used for the function of conducting current.

2. 2. The improved package structure of a power semiconductor module according to claim 1, wherein the type of the chip is any one of a diode chip, a metal oxide semiconductor (MOS) chip, a bipolar junction transistor (BJT) chip, and an insulated gate bipolar transistor (IGBT) chip, or a combination of two or more of these types.

3. 3. The improved package structure of a power semiconductor module according to claim 2, wherein the metal oxide semiconductor (MOS) chip, bipolar junction transistor (BJT) chip, or insulated gate bipolar transistor (IGBT) chip is used for switching functions.

4. 3. The improved package structure for a power semiconductor module according to claim 2, wherein the diode chip is used for rectification.

5. The improved package structure of the power semiconductor module according to claim 2, further comprising at least one set of control terminals used to receive at least one external control signal and determine whether the chip is conductive or not.

6. 2. The improved package structure for a power semiconductor module according to claim 1, wherein the number of the copper nut terminals is at least one.

7. 2. The improved package structure for a power semiconductor module according to claim 1, wherein the electrical circuit board further includes at least one electronic element connected to the chip, and cooperates with the electronic element to form the power semiconductor module.

8. A package improvement structure for a power semiconductor module, comprising: a heat dissipation base; at least one electric circuit board provided on the heat dissipation base; at least one copper nut terminal provided on the heat dissipation base or on the electric circuit board; a plastic case sidewall provided above and surrounding the heat dissipation base; and an insulating adhesive, the electric circuit board includes at least one type of chip that constitutes a power semiconductor module, the copper nut terminal is used as a bridge between an external current and an internal current of the power semiconductor module, the chip is electrically connected to the copper nut terminal via a number of conductors, and the copper nut terminal is used to conduct current; A filling space is formed inside the side wall of the plastic case, and the height of the side wall of the plastic case is lower than the height of the copper nut terminal. the insulating adhesive is injected into the filling space so as to cover the electric circuit board, and the injection height of the insulating adhesive is set so as not to exceed the height of the copper nut terminal; The improved package structure for a power semiconductor module is characterized in that the chip is a diode chip and is used for rectification.

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