Control device and storage medium

Abstract

To provide a technique that suppresses the generation of particles at or near the center of a substrate surface.SOLUTION: A control device causes a substrate processing apparatus to execute the following (A) to (D). (A) A processing liquid is supplied to the center position of a rotating substrate surface. (B) The supply position of the processing liquid is moved from the center position to a first eccentric position. (C) A replacement liquid to replace the processing liquid is supplied to a second eccentric position different from the first eccentric position. (D) The supply position of the processing liquid is moved from the first eccentric position in a direction opposite to the center position, and the supply position of the replacement liquid is moved from the second eccentric position to the center position.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present disclosure relates to a control device and a storage medium. [Background technology]

[0002] The substrate processing apparatus described in Patent Document 1 supplies a processing liquid from directly above the center position of the substrate surface, and after forming a liquid film of the processing liquid all over the substrate surface, supplies a substitute liquid to replace the processing liquid from directly above the center position, and forms a liquid film of the substitute liquid all over the substrate surface. When supplying the substitute liquid, this substrate processing apparatus replenishes the processing liquid to a position outside the supply position of the substitute liquid. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent No. 6118758 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for suppressing particle generation at or near the center position of a substrate surface. [Means for solving the problem]

[0005] A control device according to an embodiment of the present disclosure causes a substrate processing apparatus to perform the following (A) to (D): (A) supplying a processing liquid to a central position on a surface of a rotating substrate; (B) moving a supply position of the processing liquid from the central position to a first eccentric position; (C) supplying a replacement liquid for replacing the processing liquid to a second eccentric position different from the first eccentric position; (D) moving the supply position of the processing liquid from the first eccentric position in a direction opposite to the central position, and moving the supply position of the replacement liquid from the second eccentric position to the central position. Effect of the Invention

[0006] According to one aspect of the present disclosure, it is possible to suppress the generation of particles at or near the center position of the substrate surface. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1(A) is a diagram showing an example of S101 in FIG. 4, FIG. 1(B) is a diagram showing an example of S103 in FIG. 4, FIG. 1(C) is a diagram showing an example of S104 in FIG. 4, and FIG. 1(D) is a diagram showing a reference example of a step following FIG. 1(C). [Diagram 2] FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment. [Diagram 3] FIG. 3 is a diagram illustrating an example of the first moving mechanism and the second moving mechanism. [Figure 4] FIG. 4 is a flowchart showing a substrate processing method according to an embodiment. [Diagram 5] 5(A) is a diagram showing an example of S105 in FIG. 4, FIG. 5(B) is a diagram showing an example of S106 in FIG. 4, FIG. 5(C) is a diagram showing an example of S107 in FIG. 4, FIG. 5(D) is a diagram showing an example of S108 in FIG. 4, and FIG. 5(E) is a diagram showing an example of S109 in FIG. 4. [Figure 6] FIG. 6 is a table illustrating a substrate processing method according to an embodiment. [Figure 7] FIG. 7(A) is a diagram showing the particle distribution on the surface of a substrate processed by the substrate processing method of FIG. 5, and FIG. 7(B) is a diagram showing the particle distribution on the surface of a substrate processed by the substrate processing method of FIG. [Figure 8] FIG. 8 is a table showing the substrate processing method according to the first modified example. [Figure 9] FIG. 9 is a table showing the substrate processing method according to the second modified example. [Figure 10] FIG. 10 is a diagram showing an example of an inspection device of a substrate processing apparatus. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same reference numerals, and the description thereof may be omitted.

[0009] The substrate processing method includes, for example, forming a liquid film of a chemical liquid on the substrate surface, replacing the liquid film of the chemical liquid with a liquid film of a rinsing liquid, replacing the liquid film of the rinsing liquid with a liquid film of a drying liquid, and exposing the substrate surface from the liquid film of the drying liquid, and these processes are performed in the same processing vessel.

[0010] The chemical liquid is supplied to the center of the rotating substrate surface and spreads over the entire diameter of the substrate surface by centrifugal force to form a liquid film. For example, BHF (buffered hydrofluoric acid) is used as the chemical liquid. The chemical liquid is not limited to BHF, and may be, for example, DHF (dilute hydrofluoric acid). When BHF is used, the substrate surface becomes more water repellent than when DHF is used. Multiple types of chemical liquids may be supplied in sequence, in which case a liquid film of a rinsing liquid is formed between the formation of a liquid film of a first chemical liquid and the formation of a liquid film of a second chemical liquid.

[0011] The rinse liquid is supplied to the center of the rotating substrate surface and spreads over the entire diameter of the substrate surface due to centrifugal force, replacing the chemical liquid contained in the liquid film with the rinse liquid. The rinse liquid washes away the chemical liquid remaining on the substrate surface. Pure water such as DIW (deionized water) is used as the rinse liquid.

[0012] The drying liquid is supplied to the center of the rotating substrate surface and spreads over the entire diameter of the substrate surface by centrifugal force, replacing the rinsing liquid contained in the liquid film with the drying liquid. The drying liquid has a lower surface tension than the rinsing liquid. This can prevent the concave-convex pattern from collapsing due to surface tension. The drying liquid is, for example, IPA (isopropyl alcohol).

[0013] After the liquid film of the drying liquid is formed, the substrate surface is exposed from the liquid film of the drying liquid. The drying liquid is shaken off from the substrate surface by the rotation of the substrate. At that time, the supply position of the drying liquid may be moved from the center of the substrate surface toward the periphery. By moving the supply position of the drying liquid, an opening is formed in the center of the liquid film of the drying liquid, and the opening gradually widens from the center toward the periphery of the substrate surface. A drying gas such as nitrogen gas may be supplied toward the opening edge to hold down the opening edge of the liquid film of the drying liquid. The supply position of the drying gas moves following the supply position of the drying liquid.

[0014] By the way, in order to replace the liquid film, the nozzle located directly above the center position of the substrate surface is replaced. For example, in order to replace the liquid film of the rinsing liquid with a liquid film of the drying liquid, the nozzle located directly above the center position of the substrate surface is replaced from the nozzle for the rinsing liquid to the nozzle for the drying liquid.

[0015] The inventors have investigated the cause of particles being generated at or near the center of the substrate surface and have found that the cause is the interruption of the liquid film when the nozzle located directly above the center of the substrate surface is replaced. It is believed that the interruption of the liquid film causes residue of the liquid film to adhere to the substrate surface.

[0016] Next, the phenomenon in which the liquid film is interrupted at or near the center position of the substrate surface during replacement of the liquid film will be described with reference to Fig. 1. First, as shown in Fig. 1(A), a first nozzle 20 supplies rinsing liquid L1 to a center position P0 of the substrate surface Wa, and a liquid film F1 of the rinsing liquid L1 is formed over the entire substrate surface Wa.

[0017] 1(B), the first nozzle 20 is moved radially outward of the substrate W, and the supply position of the rinsing liquid L1 is moved from the central position P0 to the first eccentric position P1. This is in preparation for supplying the drying liquid L2 to a second eccentric position P2 different from the first eccentric position P1, and is in preparation for preventing interference between the second nozzle 30 and the first nozzle 20.

[0018] The second eccentric position P2 and the first eccentric position P1 are located at approximately the same distance from the central position P0, but may be located at different distances. The second eccentric position P2 and the first eccentric position P1 are located close to the central position P0 so that the liquid film is not interrupted at or near the central position P0.

[0019] 1C, while the supply position of the rinsing liquid L1 is stopped at the first eccentric position P1, the second nozzle 30 supplies the drying liquid L2 to the second eccentric position P2. The flow rate of the rinsing liquid L1 at this time is the first flow rate Q1. The first flow rate Q1 is set so that the liquid film is not interrupted at or near the central position P0.

[0020] 1D, the supply position of the rinsing liquid L1 starts to move from the first eccentric position P1 toward the peripheral position PE. The peripheral position PE is a position from the first eccentric position P1 in the opposite direction (radially outward) from the central position P0. Also, the supply position of the drying liquid L2 starts to move from the second eccentric position P2 toward the central position P0.

[0021] 1(D), when the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2 in order to prevent splashing at the supply position of the rinsing liquid L1.

[0022] The farther the supply position of the rinse liquid L1 is from the central position P0, the greater the circumferential velocity and centrifugal force at that supply position, making it more likely that liquid splashing will occur at that supply position. If the flow rate of the rinse liquid L1 is reduced in advance from the first flow rate Q1 to the second flow rate Q2, it is possible to prevent liquid splashing at the supply position of the rinse liquid L1.

[0023] The first flow rate Q1 is, for example, 1200 mL / min to 1800 mL / min. The second flow rate Q2 is, for example, 800 mL / min to 1200 mL / min. While the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2, the flow rate of the drying liquid L2 is maintained at a third flow rate Q3. The third flow rate Q3 is, for example, 50 mL / min to 100 mL / min.

[0024] However, as described above, when the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, if the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2, the liquid film may be interrupted at or near the central position P0, as shown in FIG. 1(D). This phenomenon occurs when the substrate surface Wa is water-repellent. This is because the rinsing liquid L1 is easily peeled off from the substrate surface Wa and easily swept radially outward by centrifugal force. Examples of cases in which the substrate surface Wa becomes water-repellent include cases where the substrate surface Wa is treated with BHF, cases where the substrate surface Wa is treated with high concentration HF, and cases where a water-repellent resist film is applied. This phenomenon does not occur when the substrate surface Wa is hydrophilic.

[0025] In this embodiment, in order to deal with the case where the substrate surface Wa is water-repellent, the timing T at which the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2 is delayed. The timing T is after the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1. Since the timing T is delayed, the rinsing liquid L1 can also be supplied to the central position P0, and interruption of the liquid film at or near the central position P0 can be suppressed. Therefore, it is possible to suppress adhesion of residue of the liquid film to the substrate surface due to interruption of the liquid film, and to suppress generation of particles at or near the central position P0.

[0026] Incidentally, after the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, by the time the supply position of the drying liquid L2 reaches the central position P0, the drying liquid L2 also reaches the central position P0 as shown in Fig. 5(B). Therefore, by the time the supply position of the drying liquid L2 reaches the central position P0, the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2.

[0027] In other words, the timing T for reducing the flow rate of the rinsing liquid L1 from the first flow rate Q1 to the second flow rate Q2 is the time when the supply position of the drying liquid L2 reaches the central position P0. Since the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2 before the supply position of the rinsing liquid L1 moves too far away from the central position P0, splashing of the rinsing liquid L1 at the supply position can be suppressed.

[0028] The timing T may be any timing up to the time when the supply position of the drying liquid L2 reaches the central position P0, or it may be before or at the time when the supply position of the drying liquid L2 reaches the central position P0. However, if the timing T is before the supply position of the drying liquid L2 reaches the central position P0, splashing at the supply position of the rinsing liquid L1 can be further suppressed.

[0029] The replacement of the liquid film F1 of the rinsing liquid L1 with the liquid film F2 of the drying liquid L2 will be described below. The rinsing liquid L1 corresponds to the processing liquid described in the claims, and the drying liquid L2 corresponds to the replacement liquid described in the claims.

[0030] The technology disclosed herein can also be applied to replacing a liquid film of a chemical liquid with a liquid film F1 of a rinsing liquid L1. In this case, the chemical liquid corresponds to the processing liquid described in the claims, and the rinsing liquid L1 corresponds to the replacement liquid described in the claims.

[0031] Next, the substrate processing apparatus 1 of this embodiment will be described with reference to Fig. 2. In Fig. 2, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is vertical. The substrate processing apparatus 1 processes a substrate surface Wa. The substrate W includes, for example, a silicon wafer or a compound semiconductor wafer. The substrate W may be a glass substrate.

[0032] The substrate processing apparatus 1 includes a chuck 10, a rotation mechanism 11, a first nozzle 20, a first flow rate controller 21, a first moving mechanism 22, a second nozzle 30, a second flow rate controller 31, a second moving mechanism 32, a cup 40, and a control device 90.

[0033] The chuck 10 holds the substrate W. The chuck 10 holds the substrate W horizontally from below with the substrate surface Wa facing upward. The chuck 10 is a mechanical chuck in Fig. 2, but may be a vacuum chuck, an electrostatic chuck, or the like.

[0034] The rotation mechanism 11 rotates the chuck 10. The rotation axis of the chuck 10 is arranged vertically. The chuck 10 holds the substrate W such that the center of the substrate surface Wa and the rotation center line of the chuck 10 coincide with each other.

[0035] The first nozzle 20 supplies the rinsing liquid L1 to the rotating substrate surface Wa. The first nozzle 20 is disposed above the chuck 10, and supplies the rinsing liquid L1 to the substrate surface Wa from above. The first nozzle 20 supplies the rinsing liquid L1 perpendicularly to the substrate surface Wa.

[0036] A first flow rate controller 21 and a first on-off valve 23 are provided in the middle of a first supply line that supplies the rinsing liquid L1 to the first nozzle 20. When the first on-off valve 23 opens the flow path of the rinsing liquid L1, the first nozzle 20 discharges the rinsing liquid L1. The flow rate is controlled by the first flow rate controller 21. On the other hand, when the first on-off valve 23 closes the flow path of the rinsing liquid L1, the first nozzle 20 stops discharging the rinsing liquid L1.

[0037] The first moving mechanism 22 moves the first nozzle 20 and moves the supply position of the rinsing liquid L1 in the radial direction of the substrate surface Wa. The first moving mechanism 22 has, for example, a rotating arm 22a that holds the first nozzle 20 and a rotating mechanism 22b that rotates the rotating arm 22a. The rotating mechanism 22b may also function as a mechanism for raising and lowering the rotating arm 22a. The rotating arm 22a is arranged horizontally, holds the first nozzle 20 at one end in the longitudinal direction, and is rotated about a rotating shaft extending downward from the other end in the longitudinal direction (see FIG. 3). The first moving mechanism 22 may have a guide rail and a linear motion mechanism instead of the rotating arm 22a and the rotating mechanism 22b. The guide rail is arranged horizontally, and the linear motion mechanism moves the first nozzle 20 along the guide rail.

[0038] The second nozzle 30 supplies the drying liquid L2 to the rotating substrate surface Wa. The second nozzle 30 is disposed above the chuck 10, and supplies the drying liquid L2 to the substrate surface Wa from above. The second nozzle 30 supplies the drying liquid L2 perpendicular to the substrate surface Wa.

[0039] A second flow rate controller 31 and a second on-off valve 33 are provided in the middle of a second supply line that supplies the drying liquid L2 to the second nozzle 30. When the second on-off valve 33 opens the flow path of the drying liquid L2, the second nozzle 30 ejects the drying liquid L2. The flow rate is controlled by the second flow rate controller 31. On the other hand, when the second on-off valve 33 closes the flow path of the drying liquid L2, the second nozzle 30 stops ejecting the drying liquid L2.

[0040] The second moving mechanism 32 moves the second nozzle 30 and moves the supply position of the drying liquid L2 in the radial direction of the substrate surface Wa. The second moving mechanism 32 has, for example, a rotating arm 32a that holds the second nozzle 30 and a rotating mechanism 32b that rotates the rotating arm 32a. The rotating mechanism 32b may also function as a mechanism for raising and lowering the rotating arm 32a. The rotating arm 32a is arranged horizontally, holds the second nozzle 30 at one end in the longitudinal direction, and is rotated about a rotating shaft extending downward from the other end in the longitudinal direction (see FIG. 3). The second moving mechanism 32 may have a guide rail and a linear motion mechanism instead of the rotating arm 32a and the rotating mechanism 32b. The guide rail is arranged horizontally, and the linear motion mechanism moves the second nozzle 30 along the guide rail.

[0041] The cup 40 accommodates the substrate W and collects the rinsing liquid L1 and drying liquid L2 that are shaken off from the substrate surface Wa. The cup 40 includes a cylindrical portion 41, a bottom lid portion 42, and an inclined portion 43. The cylindrical portion 41 has an inner diameter larger than the diameter of the substrate W and is disposed vertically. The bottom lid portion 42 closes the opening at the lower end of the cylindrical portion 41. The inclined portion 43 is formed around the entire upper end of the cylindrical portion 41 and inclines upward as it moves radially inward of the cylindrical portion 41.

[0042] The control device 90 controls the rotation mechanism 11, the first flow rate controller 21, the first moving mechanism 22, the second flow rate controller 31, the second moving mechanism 32, etc. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory, as shown in Fig. 2. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control device 90 controls the operation of the substrate processing apparatus 1 by having the CPU 91 execute the programs stored in the storage medium 92.

[0043] Next, a substrate processing method according to the present embodiment will be described with reference to Fig. 4, Fig. 5, and Fig. 6. Each process shown in Fig. 4 and the like is performed under the control of a control device 90.

[0044] First, in S101 of FIG. 4, as shown in FIG. 1(A), the first nozzle 20 supplies rinsing liquid L1 to the center position of the rotating substrate surface Wa, forming a liquid film F1 of the rinsing liquid L1 over the entire substrate surface Wa.

[0045] Next, in S102, the first moving mechanism 22 starts moving the first nozzle 20. The supply position of the rinsing liquid L1 starts moving from the central position P0 toward the first eccentric position P1.

[0046] Next, in S103, as shown in FIG. 1(B), the first moving mechanism 22 stops the movement of the first nozzle 20, and stops the supply position of the rinsing liquid L1 at the first eccentric position P1.

[0047] 1C, in a state in which the first moving mechanism 22 stops the supply position of the rinsing liquid L1 at the first eccentric position P1, the second nozzle 30 supplies the drying liquid L2 to the second eccentric position P2. The flow rate of the rinsing liquid L1 at this time is the first flow rate Q1.

[0048] 5A, the first moving mechanism 22 starts moving the first nozzle 20. The supply position of the rinsing liquid L1 starts moving radially outward from the first eccentric position P1. In addition, the second moving mechanism 32 starts moving the second nozzle 30. The supply position of the drying liquid L2 starts moving from the second eccentric position P2 toward the central position P0.

[0049] 5(B), the first flow rate controller 21 reduces the flow rate of the rinsing liquid L1 from the first flow rate Q1 to the second flow rate Q2. The timing T is after the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, so that the rinsing liquid L1 or the drying liquid L2 can be supplied also to the central position P0, and it is possible to prevent the liquid film from being interrupted at or near the central position P0.

[0050] 5C, in S107, when the supply position of the drying liquid L2 reaches the central position P0, the second movement mechanism 32 stops the movement of the second nozzle 30. The second nozzle 30 supplies the drying liquid L2 to the central position P0. The drying liquid L2 starts to spread from the central position P0 toward the peripheral position PE.

[0051] After the supply position of the drying liquid L2 reaches the central position P0, the rotation mechanism 11 may reduce the rotation speed of the substrate W from the first rotation speed R1 to a second rotation speed R2, as shown in Fig. 6. This is a preparation for covering the entire substrate surface Wa with a liquid film F2 of the drying liquid L2.

[0052] The drying liquid L2 has higher volatility than the rinsing liquid L1. Therefore, by reducing the rotation speed of the substrate W, the thickness of the liquid film F2 of the drying liquid L2 is increased, the evaporation of the drying liquid L2 is suppressed, and the exposure of the substrate surface Wa is suppressed. The centrifugal force acting on the liquid film F2 becomes stronger toward the radially outer side of the substrate surface Wa, and the thickness of the liquid film F2 becomes thinner. Therefore, before the drying liquid L2 spreads to the peripheral position PE, the rotation mechanism 11 reduces the rotation speed of the substrate W from the first rotation speed R1 to the second rotation speed R2. The first rotation speed R1 is, for example, 1000 rpm to 1400 rpm. The second rotation speed R2 is, for example, 500 rpm to 900 rpm.

[0053] According to this embodiment, the supply position of the drying liquid L2 is fixed at the central position P0, and the supply position of the rinsing liquid L1 is moved toward the peripheral position PE. When the drying liquid L2 spreads from the central position P0 to the peripheral position PE, the rinsing liquid L1 can be replenished in front of the drying liquid L2, and the liquid film can be prevented from being interrupted. Therefore, the generation of particles at the peripheral position PE and the like can be prevented.

[0054] 5(D), in S108, when the supply position of the rinsing liquid L1 reaches the peripheral position PE, the first movement mechanism 22 stops the movement of the first nozzle 20. The first nozzle 20 supplies the rinsing liquid L1 to the peripheral position PE.

[0055] 5(E), the first nozzle 20 stops supplying the rinsing liquid L1, thereby completing the replacement of the liquid film F1 of the rinsing liquid L1 with the liquid film F2 of the drying liquid L2.

[0056] Figure 7(A) shows the particle distribution on the substrate surface Wa processed by the substrate processing method of Figure 5. Also, Figure 7(B) shows the particle distribution on the substrate surface Wa processed by the substrate processing method of Figure 1. In Figures 7(A) and 7(B), the black circles represent particles.

[0057] The experimental conditions for Figures 7(A) and 7(B) are as follows. The substrate W is a silicon wafer, and the diameter of the substrate surface Wa is 300 mm. The substrate surface Wa has been hydrophobized by being treated with BHF in advance. The first rotation speed R1 is 1200 rpm, the second rotation speed R2 is 700 rpm, the first flow rate Q1 is 1500 mL / min, the second flow rate Q2 is 1000 mL / min, and the third flow rate Q3 is 75 mL / min.

[0058] As is clear from a comparison of Figures 7(A) and 7(B), by delaying the timing T at which the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2, it is possible to suppress the generation of particles at or near the central position P0.

[0059] Next, a substrate processing method according to a first modified example will be described with reference to Fig. 8. Below, differences between this modified example (Fig. 8) and the above embodiment (Fig. 6) will be mainly described.

[0060] 8, when the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1 (S105 in FIG. 4, FIG. 5(A)), the second flow rate controller 31 increases the flow rate of the drying liquid L2 from the third flow rate Q3 to a fourth flow rate Q4. The fourth flow rate Q4 is, for example, 120 mL / min to 180 mL / min.

[0061] When the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the flow rate of the drying liquid L2 increases, so that the drying liquid L2 also reaches the central position P0. This makes it possible to prevent the liquid film from being interrupted at or near the central position P0.

[0062] By the time the supply position of the drying liquid L2 reaches the central position P0, the second flow rate controller 31 reduces the flow rate of the drying liquid L2 from the fourth flow rate Q4 to a fifth flow rate Q5. The fifth flow rate Q5 is, for example, 50 mL / min to 100 mL / min. The fifth flow rate Q5 may be smaller than the fourth flow rate Q4 and may be the same as the third flow rate Q3.

[0063] In this modification, when the supply position of the drying liquid L2 reaches the central position P0, the second flow rate controller 31 reduces the flow rate of the drying liquid L2 from the fourth flow rate Q4 to the fifth flow rate Q5. When the supply position of the drying liquid L2 reaches the central position P0, the drying liquid L2 reliably reaches the central position P0.

[0064] In this modification, similarly to the above embodiment, the timing T for reducing the flow rate of the rinsing liquid L1 from the first flow rate Q1 to the second flow rate Q2 is after the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, but it may be at the time of starting (see FIG. 1). If the flow rate of the drying liquid L2 increases from the third flow rate Q3 to the fourth flow rate Q4 at that time, it is possible to suppress discontinuity of the liquid film at or near the central position P0.

[0065] Next, a substrate processing method according to a second modified example will be described with reference to Fig. 9. Below, differences between this modified example (Fig. 9) and the above embodiment (Fig. 6) will be mainly described.

[0066] 9, when the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the rotation mechanism 11 reduces the rotation speed of the substrate W from the first rotation speed R1 to a third rotation speed R3. The third rotation speed R3 is, for example, 800 rpm to 1200 rpm. The third rotation speed R3 may be any value that is smaller than the first rotation speed R1.

[0067] When the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the rotation speed of the substrate W decreases, so that the centrifugal force decreases and the rinsing liquid L1 or the drying liquid L2 reaches the central position P0 as well. This makes it possible to prevent the liquid film from being interrupted at or near the central position P0.

[0068] By the time the supply position of the drying liquid L2 reaches the central position P0, the rotation mechanism 11 further reduces the rotation speed of the substrate W from the third rotation speed R3 to the second rotation speed R2. The third rotation speed R3 is smaller than the first rotation speed R1 and larger than the second rotation speed R2. The second rotation speed R2 is, for example, 500 rpm to 900 rpm.

[0069] In this modification, when the supply position of the drying liquid L2 reaches the central position P0, the rotation mechanism 11 reduces the rotation speed of the substrate W from the third rotation speed R3 to the second rotation speed R2. When the supply position of the drying liquid L2 reaches the central position P0, the drying liquid L2 reliably reaches the central position P0.

[0070] In this modification, the third rotation speed R3 is greater than the second rotation speed R2, but may be the same as the second rotation speed R2, which can reduce the effort required to change the rotation speed.

[0071] In this modification, similarly to the above embodiment, the timing T for reducing the flow rate of the rinsing liquid L1 from the first flow rate Q1 to the second flow rate Q2 is after the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, but it may be at the time of starting (see FIG. 1). If the rotation speed of the substrate W is reduced from the first rotation speed R1 to the third rotation speed R3 at that time, it is possible to suppress discontinuity of the liquid film at or near the central position P0.

[0072] Suppression of discontinuity of the liquid film at or near the central position P0 can be achieved by at least one of the following (1) to (3). The combination is not particularly limited, and all of the following (1) to (3) may be combined. (1) After the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2. (2) When the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the flow rate of the drying liquid L2 is increased from the third flow rate Q3 to the fourth flow rate Q4. (3) When the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1, the rotation speed of the substrate W is reduced from the first rotation speed R1 to the third rotation speed R3.

[0073] Next, the inspection device 50 of the substrate processing apparatus 1 will be described with reference to Fig. 10. The inspection device 50 inspects the wettability of the rinsing liquid L1 on the substrate surface Wa. For example, the inspection device 50 captures an image of the rotating substrate surface Wa with a camera 51 or the like in a state where a liquid film F1 of the rinsing liquid L1 is formed on the substrate surface Wa, processes the captured image, and judges the wettability based on whether the entire substrate surface Wa is covered with the liquid film F1. The camera 51 may be installed in a processing vessel that contains the chuck 10, etc., or may be installed outside the processing vessel.

[0074] As shown in Fig. 10, when the entire substrate surface Wa is not covered with the liquid film F1 and the periphery of the substrate surface Wa is exposed from the liquid film F1, the inspection device 50 judges that the substrate surface Wa has poor wettability with the rinsing liquid L1 and is water repellent. If the substrate surface Wa is water repellent, the rinsing liquid L1 is likely to peel off and the periphery of the substrate surface Wa is exposed. This is because the centrifugal force is greater at the periphery of the substrate surface Wa than at the center. On the other hand, when the entire substrate surface Wa is covered with the liquid film F1, the inspection device 50 judges that the rinsing liquid L1 has good wettability with the substrate surface Wa and is hydrophilic.

[0075] The control device 90 determines the timing T for reducing the flow rate of the rinsing liquid L1 from the first flow rate Q1 to the second flow rate Q2 based on the inspection result of the inspection device 50. Specifically, as shown in Fig. 10, when the entire substrate surface Wa is not covered with the liquid film F1 and the periphery of the substrate surface Wa is exposed from the liquid film F1, the timing T is set to the time when the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1 and the supply position of the drying liquid L2 reaches the central position P0. On the other hand, when the entire substrate surface Wa is covered with the liquid film F1, the timing T is set to the time when the supply position of the rinsing liquid L1 starts to move radially outward from the first eccentric position P1.

[0076] Although the embodiments of the control device and storage medium according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0077] This application claims priority based on Japanese Patent Application No. 2020-037866, filed with the Japan Patent Office on March 5, 2020, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0078] L1 Rinse liquid (processing liquid) L2 Drying liquid (replacement liquid) Wa substrate surface P0 Center Position P1 1st eccentric position P2 2nd eccentric position

Claims

1. supplying a processing liquid to a central position on a surface of a rotating substrate; moving a supply position of the treatment liquid from the central position to a first eccentric position; supplying a replacement liquid to replace the treatment liquid to a second eccentric position different from the first eccentric position; moving a supply position of the treatment liquid from the first eccentric position in a direction opposite to the central position, and moving a supply position of the replacement liquid from the second eccentric position to the central position; A control device that causes the substrate processing apparatus to execute the above.

2. 2. The control device according to claim 1, further causing the substrate processing apparatus to supply the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid from the first flow rate to a second flow rate after starting to move the supply position of the processing liquid from the first eccentric position in a direction opposite to the central position, by the time the supply position of the replacement liquid reaches the central position.

3. The control device according to claim 2 , wherein the flow rate of the treatment liquid is reduced from the first flow rate to the second flow rate before the supply position of the replacement liquid reaches the central position.

4. 4. The control device according to claim 1, wherein the control device causes the substrate processing apparatus to continuously move a supply position of the processing liquid in a direction opposite to the central position while keeping a supply position of the replacement liquid fixed at the central position.

5. 4. The control device according to claim 1, further comprising: a control unit configured to control the substrate processing apparatus to supply the substitute liquid to the second eccentric position at a third flow rate; and, when a supply position of the processing liquid starts to move from the first eccentric position in a direction opposite to the central position, increase a flow rate of the substitute liquid from the third flow rate to a fourth flow rate.

6. 4. The control device according to claim 1, wherein the control device causes the substrate processing apparatus to rotate the substrate surface at a first rotation speed when the processing liquid is supplied to the first eccentric position, and causes the substrate processing apparatus to reduce the rotation speed of the substrate surface to be less than the first rotation speed at any time from when the processing liquid supply position starts to move from the first eccentric position in a direction opposite to the central position to when the replacement liquid supply position completes moving from the second eccentric position to the central position.

7. 4. A computer-readable storage medium storing a program that the control device according to claim 1 causes the substrate processing apparatus to execute.

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