SHAPE MEASURING METHOD, SHAPE MEASURING DEVICE, AND PROGRAM

Abstract

To measure the shape of a cyclically arranged pattern with high accuracy.SOLUTION: With a shape measurement method according to an embodiment, the convergence value of parameters included in a first parameter group is computed by a first fitting process using a scattering intensity profile pertaining to the scattering intensity of an electromagnetic wave with which a substrate having a prescribed pattern is irradiated, and a first predicted scattering intensity profile pertaining to scattering intensity computed by a first simulation on a first virtual structure composed on the basis of the first parameter group consisting of a plurality of parameters including a parameter of interest. The convergence value of parameters included in a second parameter group is computed by a second fitting process using the scattering intensity profile and a second predicted scattering intensity profile pertaining to scattering intensity which is computed by a second simulation on a second virtual structure composed on the basis of a second parameter group consisting of a plurality of parameters including a parameter of interest, and in which the convergence value is set as a constant to the parameter of interest.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] An embodiment of the present invention relates to a shape measuring method, a shape measuring device, and a program. [Background technology]

[0002] In the semiconductor manufacturing process, grazing incidence small angle X-ray scattering (GISAXS) is used as a technique for measuring the shape of a pattern formed on a substrate. In GISAXS, a virtual structure is assumed based on multiple parameters that indicate the shape characteristics of the pattern, and the convergence value of each parameter is calculated by simulating or fitting the virtual structure, thereby measuring the shape of the pattern. The multiple parameters that make up the virtual structure may include parameters whose convergence values ​​are difficult to calculate accurately. A decrease in the accuracy of the convergence values ​​of the parameters causes a decrease in the measurement accuracy of the pattern shape. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-53828 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment of the present invention is to provide a shape measuring method, a shape measuring device, and a program capable of measuring the shape of a pattern with high accuracy. [Means for solving the problem]

[0005] According to one embodiment of the present invention, there is provided a shape measurement method. In the shape measurement method, a scattering intensity profile is obtained regarding the scattering intensity of an electromagnetic wave irradiated from a first device to a substrate having a predetermined pattern. A first predicted scattering intensity profile is obtained regarding the scattering intensity calculated by a first simulation for a first virtual structure configured based on a first parameter group consisting of a plurality of parameters including a parameter of interest. A convergence value of a parameter included in the first parameter group is calculated by a first fitting process using the scattering intensity profile and the first predicted scattering intensity profile. A second predicted scattering intensity profile is obtained regarding the scattering intensity calculated by a second simulation for a second virtual structure configured based on a second parameter group consisting of a plurality of parameters including the parameter of interest, the convergence value of which is set as a constant for the parameter of interest. A second fitting process using the scattering intensity profile and the second predicted scattering intensity profile is calculated regarding the scattering intensity. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a shape measuring apparatus according to the first embodiment. [Diagram 2] FIG. 2 is a top view showing an example of a pattern of the substrate according to the first embodiment. [Diagram 3] FIG. 3 is a block diagram illustrating an example of a hardware configuration of a control unit and a calculation unit according to the first embodiment. [Figure 4] FIG. 4 is a block diagram illustrating an example of a functional configuration of the calculation unit according to the first embodiment. [Diagram 5] FIG. 5 is a graph showing an example of a scattering intensity profile according to the first embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of a first virtual structure according to the first embodiment. [Figure 7] FIG. 7 is a diagram illustrating an example of a second virtual structure according to the first embodiment. [Figure 8]FIG. 8 is a flowchart showing an example of a process for generating shape information in the shape measuring device according to the first embodiment. [Figure 9] FIG. 9 is a block diagram illustrating an example of a functional configuration of a calculation unit according to the second embodiment. [Figure 10] FIG. 10 is a graph showing an example of the relationship between the reference value and the convergence value of the parameter of interest before correction in the second embodiment. [Figure 11] FIG. 11 is a graph showing an example of the relationship between the reference value and the convergence value of the parameter of interest after correction in the second embodiment. [Figure 12] FIG. 12 is a flowchart showing an example of a process for correcting the convergence value of a parameter of interest in the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, a shape measuring method and a shape measuring device according to an embodiment will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the embodiment.

[0008] (First embodiment) 1 is a diagram showing an example of the configuration of a shape measuring apparatus 1 according to the first embodiment. In the following, a case where the shape measuring apparatus 1 is GISAXS will be illustrated.

[0009] The shape measuring device 1 includes a stage 11, an X-ray tube 12 (an example of a first device), a divergence slit 13, a two-dimensional detector 14, a control unit 20, and a calculation unit 30.

[0010] The stage 11 is a unit on which the substrate 40 to be measured is placed. The stage 11 is movable by an appropriate driving mechanism in a direction parallel to a placement surface on which the substrate 40 is placed, and is also rotatable within a plane parallel to the placement surface.

[0011] A predetermined pattern is formed on the substrate 40. The pattern includes a structure in which unit structures each composed of a recess or a protrusion are repeated periodically, and may be, for example, a line and space pattern of a semiconductor memory device, a hole pattern (memory hole), a pillar pattern, or the like.

[0012] FIG. 2 is a top view showing an example of the pattern P of the substrate 40 according to the first embodiment. In the drawing, the XY plane is a plane parallel to the mounting surface of the stage 11, and the Z axis is a direction perpendicular to the XY plane. The pattern P shown here is a line-and-space pattern, and includes a first space portion 41, a second space portion 42, and a line portion 45. The first space portion 41 and the second space portion 42 are recesses dug from the surface of the substrate 40 to the inside of the substrate 40 (negative direction of the Z axis) along the Y axis. The width of the second space portion 42 in the X direction is larger than the width of the first space portion 41 in the X direction. The line portion 45 is a convex portion formed between the first space portion 41 and the second space portion 42. One first space portion 41, one second space portion 42, and two line portions 45 constitute a unit structure C, and the unit structures C are arranged two-dimensionally and periodically in a top view. 2, one unit structure C extends from the middle part in the X-axis direction of line portion 45 adjacent to the left side of first space portion 41 to the middle part in the X-axis direction of line portion 45 adjacent to the right side of second space portion 42, but the division of unit structures C is not limited to this. Note that pattern P shown in FIG. 2 is an example, and the pattern formed on substrate 40 is not limited to a line-and-space pattern.

[0013] The X-ray tube 12 is a unit including a light source that generates X-rays (an example of electromagnetic waves) of a predetermined wavelength, a concave mirror, and the like. The light source is not particularly limited as long as it generates X-rays, but may be, for example, a light source that generates Cu Kα rays. The X-ray tube 12 generates incident X-rays Li with a wavelength of, for example, 1 nm or less in response to a control signal from the control unit 20. The optical path of the incident X-rays Li is adjusted by a concave mirror in the X-ray tube 12, and the substrate 40 is irradiated with a desired incident angle α. The incident X-rays Li are scattered by a pattern P on the substrate 40, generating scattered X-rays Lo. The scattered X-rays Lo are scattered from the substrate 40 at various emission angles β depending on the shape of the pattern P.

[0014] The divergence slit 13 is a slit for adjusting the width of the incident X-rays Li. When it is desired to increase the intensity of the incident X-rays Li, the width of the divergence slit 13 is increased in response to a control signal from the control unit 20.

[0015] The two-dimensional detector 14 is disposed at a position sufficiently distant from the substrate 40 (pattern P), detects the scattered X-rays Lo with a light receiving element, and measures the intensity (scattering intensity) of the scattered X-rays Lo. The two-dimensional detector 14 has a light receiving section in which light receiving elements are arranged two-dimensionally. Each light receiving element measures the intensity of the scattered X-rays Lo. A two-dimensional image showing the distribution of scattering intensity can be generated by associating the scattering intensity measured by each light receiving element with the position of each light receiving element. The two-dimensional detector 14 outputs detection data showing the detection result of the scattering intensity (e.g., data showing the above-mentioned two-dimensional image, etc.) to the calculation unit 30.

[0016] The control unit 20 is an information processing device that performs processing for controlling the stage 11, the X-ray tube 12, the divergence slit 13, and the like. The control unit 20 adjusts the position of the substrate 40 on which the incident X-rays Li are incident by displacing the stage 11. The control unit 20 also controls the incidence angle α of the incident X-rays Li with respect to the substrate 40, the output of the incident X-rays Li, and the like. The control unit 20 also controls the width of the divergence slit 13 to adjust the irradiation area of ​​the incident X-rays Li. The control unit 20 also sets measurement conditions for measuring the substrate 40 in the stage control unit 21, the light source control unit 22, the slit width control unit 23, and the calculation unit 30. The measurement conditions include, for example, the incidence angle α, the slit width, and the rotation speed of the stage 11.

[0017] The calculation unit 30 is an information processing device that performs processing for measuring the shape of the pattern P formed on the substrate 40, based on the detection data output from the two-dimensional detector 14. The function of the calculation unit 30 will be described later.

[0018] 3 is a block diagram showing an example of the hardware configuration of the control unit 20 and the calculation unit 30 according to the first embodiment. The control unit 20 and the calculation unit 30 illustrated here include a microcomputer (processor) to which a CPU (Central Processing Unit) 51, a ROM (Read Only Memory) 52, a RAM (Random Access Memory) 53, an external storage device 54, an output device 55, an input device 56, and the like are connected via a bus 57. The CPU 51 executes various calculation processes according to programs stored in the ROM 52, the external storage device 54, and the like. The RAM 53 is used as a working area for the CPU 51, and the like. The output device 55 may be, for example, a display, a speaker, and the like. The input device 56 may be, for example, a keyboard, a touch panel mechanism, a pointing device, and the like. Note that the hardware configuration of the control unit 20 and the calculation unit 30 is not limited to the above, and may be configured using devices such as an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), and the like.

[0019] Fig. 4 is a block diagram showing an example of the functional configuration of the calculation unit 30 according to the first embodiment. The calculation unit 30 has a scattering intensity profile acquisition unit 101, a first simulation unit 102, a first fitting unit 103, a second simulation unit 104, a second fitting unit 105, and a shape information generation unit 106. These functional components 101 to 106 can be realized by cooperation between hardware and software (programs) such as those shown in Fig. 3, for example.

[0020] The scattering intensity profile acquisition unit 101 acquires a scattering intensity profile relating to the scattering intensity of electromagnetic waves irradiated onto the substrate 40. The scattering intensity profile acquisition unit 101 according to the present embodiment acquires (generates) a scattering intensity profile relating to the scattering intensity when the actual substrate 40 is irradiated with incident X-rays Li, based on the detection data output from the two-dimensional detector 14.

[0021] 5 is a graph showing an example of a scattering intensity profile according to the first embodiment. The scattering intensity profile shown here shows the relationship between the emission angle β (horizontal axis) of the scattered X-rays Lo and the intensity (vertical axis) of the scattered X-rays Lo.

[0022] The first simulation unit 102 (FIG. 4) acquires a first predicted scattering profile by executing a first simulation on a first virtual structure configured based on a first parameter group. The first parameter group is a group consisting of a plurality of parameters that indicate the geometric features of the pattern P to be measured, and includes a parameter of interest. The parameter of interest is a parameter selected in advance from among the plurality of parameters, and may be, for example, a parameter for which it is relatively difficult to calculate a convergence value by a final fitting process (a second fitting process described later). The first virtual structure is a virtual structure configured based on the above-mentioned first parameter group.

[0023] Fig. 6 is a diagram showing an example of a first virtual structure M1 according to the first embodiment. The first virtual structure M1 illustrated here is a simplified representation of the shape characteristics of the unit structure C of the pattern P illustrated in Fig. 2, and has the height H, the first width S1, the second width S2, the line width CD, and the width difference ds as parameters.

[0024] The height H indicates the height (depth) from the bottom to the top of the first space portion 41 and the second space portion 42. The first width S1 indicates the width of the first space portion 41 in the X-axis direction when it is assumed that the first space portion 41 has a constant width over the entire height. The second width S2 indicates the width of the second space portion 42 in the X-axis direction when it is assumed that the second space portion 42 has a constant width over the entire height. The line width CD indicates the distance between the first space portion 41 and the second space portion 42 when it is assumed that the first space portion 41 and the second space portion 42 each have a constant width over the entire height. The width difference ds indicates the difference (S2-S1) between the first width S1 and the second width S2. In this embodiment, the width difference ds is set as the parameter of interest.

[0025] The first simulation unit 102 (FIG. 4) executes a first simulation on the first virtual structure M1 as described above. The first simulation is a process of predicting the scattering intensity when the first virtual structure M1 is irradiated with incident X-rays Li under predetermined measurement conditions. By such a first simulation, a first predicted scattering profile regarding the scattering intensity when the first virtual structure M1 is irradiated with incident X-rays Li is acquired (generated). The first predicted scattering profile, like the scattering intensity profile exemplified in FIG. 5, indicates the relationship between the emission angle β of the scattered X-rays Lo and the intensity of the scattered X-rays Lo.

[0026] The first fitting section 103 calculates convergence values ​​of the parameters included in the first parameter group by a first fitting process using the scattering intensity profile and the first predicted scattering intensity profile. In the first fitting process, the scattering intensity of the scattering intensity profile is compared with the scattering intensity of the first predicted scattering intensity profile obtained by changing the value of the parameter, and the value of the parameter included in the first parameter group when the difference between both scattering intensities is equal to or smaller than a threshold value is set as the convergence value.

[0027] The second simulation unit 104 obtains a second predicted scattering profile by executing a second simulation for a second virtual structure configured based on the second parameter group. The second parameter group is made up of a plurality of parameters including a parameter of interest, and the convergence value calculated by the first fitting unit 103 (the convergence value calculated using the first virtual structure M1) is set as a constant for the parameter of interest. The second virtual structure is a virtual structure configured based on such a second parameter group.

[0028] 7 is a diagram showing an example of the second virtual structure M2 according to the first embodiment. The second virtual structure M2 illustrated here expresses the shape features of the unit structure C of the pattern P illustrated in FIG. 2 in more detail than the first virtual structure M1. The second virtual structure M2 has the height H, the first width S1, the second width S2, the line width CD, the first bottom curvature radius RB1, the second bottom curvature radius RB2, the first top curvature radius RT1, the second top curvature radius RT2, the first space portion inclination angle SWA1, the second space portion inclination angle SWA2, and the width difference ds as parameters, and the width difference ds, which is the parameter of interest, is set as a constant K to the convergence value calculated by the first fitting unit 103.

[0029] The height H indicates the height (depth) from the bottom (center of the bottom) to the top end of the first space portion 41 and the second space portion 42. The first width S1 indicates the width in the X-axis direction of the first space portion 41 at the position H / 2. The second width S2 indicates the width in the X-axis direction of the second space portion 42 at the position H / 2. The line width CD indicates the distance between the first space portion 41 and the second space portion 42 at the position H / 2. The first bottom curvature radius RB1 indicates the curvature radius of the bottom of the first space portion 41. The second bottom curvature radius RB2 indicates the curvature radius of the bottom of the second space portion 42. The first upper curvature radius RT1 indicates the curvature radius of the portion of the line portion 45 on the first space portion 41 side. The second upper curvature radius RT2 indicates the curvature radius of the portion of the line portion 45 on the second space portion 42 side. The first space portion inclination angle SWA1 indicates the inclination angle of the side of the first space portion 41 relative to the horizontal plane (XY plane). The second space portion inclination angle SWA2 indicates the inclination angle of the side of the second space portion 42 relative to the horizontal plane. The width difference ds indicates the difference (S2-S1) between the first width S1 and the second width S2, and is fixed to a constant K (a convergence value calculated by the first fitting process).

[0030] The second simulation unit 104 (FIG. 4) executes a second simulation on the second virtual structure M2 as described above. The second simulation is a process of predicting the scattering intensity when the incident X-rays Li are irradiated onto the second virtual structure M2 under predetermined measurement conditions. By such a second simulation, a second predicted scattering profile regarding the scattering intensity when the incident X-rays Li are irradiated onto the second virtual structure M2 is acquired (generated). The second predicted scattering profile, like the scattering intensity profile exemplified in FIG. 5, indicates the relationship between the emission angle β of the scattered X-rays Lo and the intensity of the scattered X-rays Lo.

[0031] The second fitting unit 105 calculates the convergence value of each parameter included in the second parameter group by a second fitting process using the scattering intensity profile and the second predicted scattering intensity profile. The parameters included in the second parameter group in this embodiment are height H, first width S1, second width S2, line width CD, first bottom radius of curvature RB1, second bottom radius of curvature RB2, first top radius of curvature RT1, second top radius of curvature RT2, first space portion inclination angle SWA1, second space portion inclination angle SWA2, and width difference ds (constant K). In the second fitting process, the scattering intensity of the scattering intensity profile is compared with the scattering intensity of the second predicted scattering intensity profile obtained by changing the parameters, and the value of each parameter when the difference between both scattering intensities is equal to or less than a threshold value is set as the convergence value.

[0032] The shape information generating unit 106 generates shape information regarding the shape of the pattern P to be measured based on the convergence value of each parameter included in the second parameter group. The shape information can be used in various ways, and may be used, for example, for evaluating the quality of the substrate 40, controlling an apparatus for forming the pattern P on the substrate 40, and the like.

[0033] 8 is a flowchart showing an example of processing when generating shape information in the shape measuring device 1 according to the first embodiment. The scattering intensity profile acquisition unit 101 acquires a scattering intensity profile based on detection data from the two-dimensional detector 14 (S101). The first simulation unit 102 sets a first virtual structure M1 based on a first parameter group including a parameter of interest (e.g., width difference ds) (S102), executes a first simulation for the first virtual structure M1, and acquires a first virtual scattering intensity profile (S103).

[0034] The first fitting unit 103 calculates convergence values ​​of parameters included in the first parameter group by a first fitting process using the scattering intensity profile and the first virtual scattering intensity profile (S104). The second simulation unit 104 sets a second virtual structure M2 based on a second parameter group in which a parameter of interest is fixed to a convergence value (constant K) (S105), executes a second simulation for the second virtual structure M2, and obtains a second virtual scattering intensity profile (S106).

[0035] The second fitting section 105 calculates convergence values ​​of each parameter included in the second parameter group by a second fitting process using the scattering intensity profile and the second virtual scattering intensity profile (S107). The shape information generation section 106 generates shape information relating to the shape of the pattern P based on the convergence values ​​of the second parameter group (S108).

[0036] According to the above configuration, the convergence value of the parameter of interest is calculated using a relatively simple virtual structure (first virtual structure M1). This makes it possible to reduce the processing load when performing processing (second simulation and second fitting processing) using a complex virtual structure (second virtual structure M2) and to avoid convergence of the parameter of interest to an incorrect value. This makes it possible to measure the shape of the pattern with high accuracy.

[0037] Other embodiments will be described below with reference to the drawings. The same or similar parts to those in the first embodiment will be denoted by the same reference numerals and the description thereof will be omitted in some cases.

[0038] Second embodiment 9 is a block diagram showing an example of a functional configuration of a calculation unit 30 according to the second embodiment. The calculation unit 30 according to the present embodiment differs from the first embodiment in that it includes a reference value acquisition unit 201 and a correction unit 202 as means for correcting the convergence value of a parameter of interest.

[0039] The reference value acquisition unit 201 acquires a reference value, which is a value of a parameter of interest measured using a device (second device) different from a device (X-ray tube 12: first device) that irradiates electromagnetic waves (incident X-rays Li) for acquiring the above-mentioned scattering intensity profile (FIG. 5). The second device may be, for example, a device that measures the value of the parameter of interest by irradiating the substrate 40 with electromagnetic waves having a wavelength different from that of the incident X-rays Li. In this case, the second device may be, for example, a CD-SEM or the like. The second device may also be a device that has a pattern P and measures the value of the parameter of interest by destructive testing of a sample substrate different from the substrate 40 that is actually the measurement target (placed on the stage 11). In this case, the second device may be, for example, an X-SEM, an X-TEM, or the like.

[0040] The correction unit 202 corrects the convergence value of the parameter of interest calculated by the first fitting unit 103, based on the reference value (the value of the parameter of interest measured by the second device) acquired by the reference value acquisition unit 201. The correction unit 202 sets a correction coefficient for correcting the convergence value, based on the difference between the convergence value of the parameter of interest calculated by the first fitting process (first fitting unit 103) and the reference value acquired by the reference value acquisition unit 201.

[0041] FIG. 10 is a graph showing an example of the relationship between the reference value and the convergence value of the parameter of interest before correction in the second embodiment. In this graph, the horizontal axis corresponds to the reference value, and the vertical axis corresponds to the convergence value of the parameter of interest before correction. In this example, a value measured by X-TEM is used as the reference value. Line L shows the correspondence relationship between the reference value and the convergence value, and if there is no error between the two, the slope is 1 and the offset (the value of the convergence value when the reference value is 0) is 0, but in the example shown in FIG. 10, the slope is 0.599 and the offset is 0.386. The correction unit 202 sets a correction coefficient so that such errors in the slope and offset are equal to or less than a threshold value.

[0042] 11 is a graph showing an example of the relationship between the reference value and the convergence value of the parameter of interest after correction in the second embodiment. In this graph, the horizontal axis corresponds to the reference value, and the vertical axis corresponds to the convergence value of the parameter of interest after correction. As shown in FIG. 11, in the line L after correction, the slope is close to 1, and the offset is close to 0.

[0043] 12 is a flow chart showing an example of a process for correcting a convergence value of a parameter of interest in the second embodiment. The reference value acquisition unit 201 measures the value of the parameter of interest in the substrate 40 or the sample substrate that is actually being measured by the second device, and acquires the measured value as a reference value (S201). The correction unit 202 sets a correction coefficient for correcting the convergence value based on the difference between the convergence value of the parameter of interest calculated by the first fitting process (first fitting unit 103) and the reference value acquired by the reference value acquisition unit 201 (S202). The correction unit 202 corrects the convergence value based on the correction coefficient (S203), and outputs the corrected convergence value to the second simulation unit 104 as the constant K of the parameter of interest (S204).

[0044] According to this embodiment, the calculation accuracy of the convergence value of the parameter of interest can be improved, and the measurement accuracy of the shape of the pattern P can be improved.

[0045] The programs for causing a computer to execute the various processes and functions described in the above-mentioned embodiments are provided by being recorded in a computer-readable recording medium such as a CD-ROM, a flexible disk (FD), a CD-R, or a digital versatile disk (DVD) in an installable or executable format. The programs may be provided by being stored on a computer connected to a network such as the Internet and downloaded via the network. The programs may be provided or distributed via a network such as the Internet. The programs may be provided by being pre-installed in a ROM or the like.

[0046] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0047] 1...shape measuring device, 11...stage, 12...X-ray tube, 13...divergence slit, 14...two-dimensional detector, 20...control unit, 30...calculation unit, 40...substrate, 41...first space unit, 42...second space unit, 101...scattering intensity profile acquisition unit, 102...first simulation unit, 103...first fitting unit, 104...second simulation unit, 105...second fitting unit, 106...shape information generation unit, 201...reference value acquisition unit, 202...correction unit, C...unit structure, ds...width difference (parameter of interest), Li...incident X-ray, Lo...scattered X-ray, M1...first virtual structure, M2...second virtual structure, P...pattern, α...incident angle, β...emit angle

Claims

1. acquiring a scattering intensity profile relating to the scattering intensity of an electromagnetic wave irradiated from a first device onto a substrate having a predetermined pattern; obtaining a first predicted scattering intensity profile relating to scattering intensity calculated by a first simulation for a first virtual structure configured based on a first parameter group consisting of a plurality of parameters including a parameter of interest; calculating convergence values ​​of parameters included in the first parameter group by a first fitting process using the scattering intensity profile and the first predicted scattering intensity profile; acquiring a second predicted scattering intensity profile relating to the scattering intensity calculated by a second simulation for a second virtual structure configured based on a second parameter group consisting of a plurality of parameters including the parameter of interest, the convergence value being set as a constant for the parameter of interest; calculating convergence values ​​of parameters included in the second parameter group by a second fitting process using the scattering intensity profile and the second predicted scattering intensity profile; A shape measurement method comprising:

2. correcting a convergence value of the parameter of interest calculated by the first fitting process based on a reference value which is a value of the parameter of interest measured using a second device different from the first device; The shape measurement method according to claim 1 , further comprising:

3. The second device measures the reference value by using an electromagnetic wave having a wavelength different from the electromagnetic wave irradiated from the first device. The shape measuring method according to claim 2 .

4. The second device is a CD-SEM. The shape measuring method according to claim 2 .

5. the second device measures the reference value by destructive testing of a sample substrate having the pattern and different from the substrate; The shape measuring method according to claim 2 .

6. The second device is an X-SEM or an X-TEM. The shape measuring method according to claim 5 .

7. a scattering intensity profile acquisition unit that acquires a scattering intensity profile relating to the scattering intensity of an electromagnetic wave irradiated from the first device onto a substrate having a predetermined pattern; a first simulation unit that acquires a first predicted scattering intensity profile regarding the scattering intensity calculated by a first simulation for a first virtual structure configured based on a first parameter group consisting of a plurality of parameters including a parameter of interest; a first fitting unit that calculates convergence values ​​of parameters included in the first parameter group by a first fitting process using the scattering intensity profile and the first predicted scattering intensity profile; a second simulation unit that acquires a second predicted scattering intensity profile related to the scattering intensity calculated by a second simulation for a second virtual structure that is configured based on a second parameter group consisting of a plurality of parameters including the parameter of interest, the convergence value being set as a constant for the parameter of interest; and a second fitting unit that calculates convergence values ​​of parameters included in the second parameter group by a second fitting process using the scattering intensity profile and the second predicted scattering intensity profile; A shape measurement device comprising:

8. On the computer, A process of acquiring a scattering intensity profile relating to the scattering intensity of an electromagnetic wave irradiated from a first device onto a substrate having a predetermined pattern; obtaining a first predicted scattering intensity profile relating to scattering intensity calculated by a first simulation for a first virtual structure configured based on a first parameter group consisting of a plurality of parameters including a parameter of interest; a process of calculating convergence values ​​of parameters included in the first parameter group by a first fitting process using the scattering intensity profile and the first predicted scattering intensity profile; obtaining a second predicted scattering intensity profile regarding the scattering intensity calculated by a second simulation for a second virtual structure configured based on a second parameter group consisting of a plurality of parameters including the parameter of interest, the convergence value being set as a constant for the parameter of interest; a process of calculating convergence values ​​of parameters included in the second parameter group by a second fitting process using the scattering intensity profile and the second predicted scattering intensity profile; A program that executes the following.

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