Temperature change rate control device, method and semiconductor processing device

Abstract

The present invention discloses a temperature change rate control device, method, and semiconductor processing apparatus. The device includes a temperature monitoring unit for acquiring the temperature of a wafer located in a process chamber in real time; a controller for calculating the temperature change rate of the wafer based on the temperature acquired by the temperature monitoring unit, and, if the temperature change rate is outside a predetermined temperature change rate range, sending a first control signal to a ventilation mechanism and / or a second control signal to an air intake mechanism to control the temperature change rate within the temperature change rate range; a ventilation mechanism for introducing gas into the process chamber in response to the received first control signal to adjust the air pressure to control the temperature change rate of the wafer; and an air intake mechanism for suctioning air in response to the received second control signal to adjust the air pressure to control the temperature change rate of the wafer. The present invention can accurately control the temperature drop rate of a silicon wafer while avoiding particle contamination problems.

Description

[Technical field]

[0001] The present invention relates to the field of semiconductor integrated circuit manufacturing technology, and more particularly to a temperature change rate control device, method, and semiconductor processing device. [Background technology]

[0002] As the requirements for particle size and particle count in the 28nm and below technology generation continue to increase, the impact of particles generated during silicon wafer processing on process results is becoming increasingly evident, making it extremely important to reduce the number of particles during processing. Because the dimensions of the trenches and line widths of integrated circuits are very small, even tiny particles can cause significant damage to the process results of silicon wafers, such as the connection of different conductors, the disconnection and connection of the same conductor, and the formation of holes, resulting in greater energy consumption and heat. If chip units are manufactured using silicon wafers with these problems, the chip units may become unusable and be discarded, which reduces the product yield.

[0003] The requirements for particles in the technology generation of 28 nm or less, especially in the technology generation of 14 nm to 7 nm and below, are mainly embodied in the following two aspects: the size of the particles is required to be smaller, even reaching 10 nm or less, while the number of particles is required to be smaller, generally stabilized at 10 grains or less.

[0004] In addition to strictly controlling the particles generated during the process, special attention should be paid to the particles generated during the transport of the silicon wafer outside the process chamber. Taking a typical physical vapor deposition process as an example, the silicon wafer must be cooled in an inert gas environment after the process is completed before it can be transported to the air environment.

[0005] Currently, the normal cooling process is 1. The silicon wafer is loaded into the cooling chamber and placed on the bracket. 2. Drop the silicon wafer together with the bracket onto the cooling plate. 3. Open the vent valve to introduce inert gas into the cooling chamber so that the air pressure in the cooling chamber reaches the set air pressure, and then close the valve after a predetermined time has elapsed. 4. Cool the silicon wafer under the above set air pressure for a specified time. 5. Remove the silicon wafer from the cooling chamber.

[0006] However, after the silicon wafer that has undergone the above-mentioned cooling process in the cooling chamber, the particles exceed the standard, and the requirements for particles of 14 nm to 7 nm and smaller technology generations cannot be met. Summary of the Invention [Problem to be solved by the invention]

[0007] SUMMARY OF THE PRESENT EMBODIMENT An object of the present invention is to provide a temperature change rate control device, method and semiconductor processing apparatus that realizes control of the temperature change rate of a wafer in a process chamber and avoids particle contamination problems caused by cooling the wafer too quickly. [Means for solving the problem]

[0008] In a first aspect, the present invention provides a temperature change rate control device for application in a process chamber of a semiconductor process device, the device comprising: a temperature monitoring unit; a controller connected to the temperature monitoring unit; and a ventilation mechanism and an intake mechanism, both connected to the controller; the temperature monitoring unit is for acquiring a temperature of a wafer located in the process chamber in real time; the controller is for calculating a temperature change rate of the wafer based on the temperature acquired by the temperature monitoring unit, and when the temperature change rate is out of a set temperature change rate range, sending a first control signal to the ventilation mechanism and / or a second control signal to the intake mechanism so as to control the temperature change rate within the temperature change rate range; the vent mechanism is in communication with the process chamber and is adapted to introduce a gas that does not react with the wafer into the process chamber in response to the received first control signal so as to adjust an air pressure in the process chamber and thereby control a rate of change of a temperature of the wafer; The suction mechanism is in communication with the process chamber and is for suctioning the process chamber in response to the received second control signal so as to control the rate of change of temperature of the wafer by adjusting the air pressure in the process chamber.

[0009] As an option, the temperature monitoring unit includes a non-contact temperature measuring element installed outside the process chamber, the non-contact temperature measuring element being located at a position corresponding to a dielectric window in the top wall of the process chamber, and configured to acquire the temperature of a wafer located in the process chamber through the dielectric window and transmit the temperature to the controller.

[0010] As an option, the vent mechanism comprises a vent line communicating with the process chamber, the vent line having a vent valve electrically connected to the controller, the controller being configured to send the first control signal to the vent valve, and the vent valve being configured to open or close in response to the first control signal to connect or disconnect the vent line.

[0011] As an option, the intake mechanism comprises an intake line communicating with the process chamber, the intake line having an exhaust valve electrically connected to the controller, the controller being configured to send the second control signal to the exhaust valve, and the exhaust valve being configured to open or close in response to the second control signal to connect or disconnect the intake line.

[0012] In a second aspect, the present invention provides a semiconductor processing apparatus comprising a process chamber and an apparatus for controlling a rate of temperature change according to the first aspect.

[0013] Optionally, a bracket and cooling platen are provided within the process chamber, the bracket for supporting a wafer above the cooling platen and providing a gap between the wafer and the cooling platen.

[0014] As an option, a dielectric window is provided on the top wall of the process chamber, and the temperature monitoring unit includes a non-contact temperature measuring element installed outside the process chamber, the non-contact temperature measuring element being located at a position corresponding to the dielectric window and configured to obtain the temperature of the member to be treated located in the process chamber through the dielectric window.

[0015] In a third aspect, the present invention further provides a method for controlling a temperature change rate, which is applied to a process chamber of a semiconductor processing apparatus, and uses the temperature change rate control device according to the first aspect, the method for controlling the temperature change rate comprising the steps of: acquiring a temperature of a wafer located within the process chamber in real time; calculating a temperature change rate of the wafer based on the temperature, and judging whether the temperature change rate of the wafer is within a set temperature change rate range; if the temperature change rate of the wafer is out of the set temperature change rate range, sending a first control signal to the venting mechanism to control the temperature change rate of the wafer and / or sending a second control signal to the suction mechanism, the venting mechanism introducing a gas that does not react with the wafer into the process chamber in response to the received first control signal, so as to control the temperature change rate of the wafer by adjusting the air pressure of the process chamber; and suctioning the process chamber in response to the received second control signal, so as to control the temperature change rate of the wafer by adjusting the air pressure of the process chamber; Then, returning to the step of acquiring a real-time temperature of a wafer located within the process chamber; If the temperature change rate of the wafer is within a set temperature change rate range, returning to the step of acquiring the temperature of the wafer located in the process chamber in real time.

[0016] Optionally, sending a first control signal to the vent mechanism and / or sending a second control signal to the intake mechanism when the temperature change rate of the wafer falls outside a set temperature change rate range may include determining whether a temperature change rate of the wafer is above or below the temperature change rate range; If the temperature change rate of the wafer exceeds the temperature change rate range, sending the second control signal to the air intake mechanism to cause the air intake mechanism to reduce the air pressure in the process chamber, and then returning to the step of acquiring the temperature of the wafer located in the process chamber in real time; If the temperature change rate of the wafer falls below the temperature change rate range, sending a first control signal to the vent mechanism so that the vent mechanism introduces a gas that does not react with the wafer into the process chamber in response to the received first control signal to increase the air pressure in the process chamber, and then returning to the step of acquiring the temperature of the wafer located in the process chamber in real time.

[0017] As an option, the vent mechanism comprises a vent line communicating with the process chamber, the vent line having a vent valve electrically connected to the controller, the controller being configured to send the first control signal to the vent valve, the vent valve being configured to open or close in response to the first control signal to connect or disconnect the vent line; the intake mechanism comprises an intake line communicating with the process chamber, the intake line having an exhaust valve electrically connected to the controller, the controller being configured to send the second control signal to the exhaust valve, the exhaust valve being configured to open or close in response to the second control signal to connect or disconnect the intake line; Specifically, transmitting the second control signal to the suction mechanism to cause the suction mechanism to suction the process chamber in response to the received second control signal includes: controlling the exhaust valve to be open for a first predetermined time and then to close the exhaust valve; Specifically, transmitting a first control signal to the venting mechanism such that the venting mechanism introduces a gas that does not react with the wafer into the process chamber in response to the received first control signal includes: Controlling the vent valve to be open for a second predetermined time and then closing the vent valve. Effect of the Invention

[0018] The beneficial effects of the present invention are as follows:

[0019] In the temperature change rate control device, method and technical solution of the semiconductor processing apparatus according to the present invention, the temperature of the wafer located in the process chamber is obtained in real time by the temperature monitoring unit, and the temperature change rate of the wafer is calculated by the controller; if the temperature change rate is out of the set temperature change rate range, a first control signal is sent to the ventilation mechanism and / or a second control signal is sent to the suction mechanism, and the ventilation mechanism can introduce a gas that does not react with the wafer into the process chamber according to the received first control signal, and the suction mechanism can suction the process chamber according to the received second control signal, thereby realizing the adjustment of the air pressure in the process chamber, and thereby indirectly adjusting the heat transfer between the wafer and the hot or cold source, so as to control the temperature change rate of the wafer until the temperature change rate falls within the temperature change rate range, further realizing the accurate control of the temperature change rate of the wafer, and effectively improving the temperature adjustment efficiency of the process chamber, while avoiding the particle contamination problem caused by the wafer being cooled too fast in the prior art.

[0020] The apparatus of the present invention has other features and advantages which will be apparent from or will be described in detail in the drawings and specific embodiments which follow and are incorporated herein by reference, both of which are intended to explain certain principles of the invention. [Brief description of the drawings]

[0021] The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail the exemplary embodiments of the present invention with reference to the drawings, in which like reference numerals generally represent like elements. [Figure 1] FIG. 1 shows the temperature drop curves of a wafer in different gases. [Diagram 2] FIG. 2 is a structural schematic diagram of a temperature change rate control device according to an embodiment of the present invention. [Diagram 3] FIG. 3 is a schematic diagram of the structure of a semiconductor processing device according to an embodiment of the present invention. [Figure 4] FIG. 4 is a flow chart of a method for controlling the temperature change rate according to the present invention. [Diagram 5] FIG. 5 is another flowchart of the temperature change rate control method according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] For wafers that have completed processing in a conventional process chamber, 1. The wafer is loaded into the process chamber and placed on the bracket. 2. Drop the wafer together with the bracket onto the cooling plate. 3. Open the vent valve to introduce an inert gas (e.g., Ar) into the process chamber so that the air pressure in the process chamber reaches a set air pressure, and then close the valve after a set time (e.g., 10 s) has elapsed. 4. Cool the wafer under the above set air pressure for a specified time. 5. The vent valve is opened until the inside of the process chamber is at atmospheric pressure, and then the wafer is removed from the process chamber, thus carrying out the cooling process.

[0023] In the conventional cooling process, the real-time temperature of the wafer cannot be monitored, the wafer cooling rate cannot be obtained, and the wafer cooling rate cannot be controlled.

[0024] As shown in Figure 1, as the air pressure in the process chamber increases from vacuum to atmospheric pressure, the cooling rate of the wafer (e.g., silicon wafer) gradually increases, and the cooling rate can increase from ~1°C / s to ~10°C / s. The higher the air pressure in the chamber, the easier it is for the heat of the wafer to be transferred to the cooling plate, so the faster the wafer cools down. During the process, if the wafer cooling rate is too fast (~10°C / s), the particle test result will be significantly above the standard (10 nm diameter particles are larger than 100 grains and have an irregular random distribution), and after controlling the air pressure in the process chamber to 100 Torr, the cooling rate will slow down, and the subsequent particle test result will be pass (10 nm diameter particles are smaller than 10 grains).

[0025] As can be seen from the above, if the cooling rate is too fast, the properties of the grown thin film are easily changed, such as particle problems. However, the cooling rate must not be too slow, otherwise the production capacity of the machine body will decrease. Therefore, it is very important to realize the control of the temperature change rate of the wafer.

[0026] The temperature change rate control device, method, and semiconductor processing device of the present invention can monitor and control the temperature change rate of a wafer, effectively reducing the problem of particle contamination caused by a wafer cooling rate that is too fast, and improving the production capacity of the machine body.

[0027] The present invention will now be described in more detail with reference to the drawings. The drawings show preferred embodiments of the present invention, but it will be understood that the present invention can be realized in various forms and should not be limited by the embodiments detailed herein. On the contrary, the purpose of providing these embodiments is to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art.

[0028] Example 1 2 is a structural schematic diagram of a temperature change rate control device according to an embodiment of the present invention. As shown in FIG. 2, this embodiment provides a temperature change rate control device for a process chamber of a semiconductor processing device, which includes a temperature monitoring unit, a controller 110 connected to the temperature monitoring unit, and a ventilation mechanism and an intake mechanism both connected to the controller 110; The temperature monitoring unit is for acquiring in real time the temperature of a wafer located in the process chamber 101. In some alternative embodiments, the temperature monitoring unit includes a non-contact temperature measuring element installed outside the process chamber 101, the non-contact temperature measuring element being located at a position corresponding to the dielectric window 105 (e.g., a transparent quartz window) on the top wall of the process chamber 101 and electrically connected to the controller 110 for acquiring the temperature of the wafer located in the process chamber 101 through the dielectric window 105 and transmitting it to the controller 110. For example, the non-contact temperature measurement element includes a temperature gauge 109 and a temperature probe 108 installed outside the process chamber 101, the temperature gauge 109 is electrically connected to the controller 110, the temperature probe 108 is electrically connected to the temperature gauge 109, the temperature probe 108 is for acquiring the temperature of the wafer located in the process chamber 101 through a dielectric window 105 located on the top wall of the process chamber 101, and the temperature gauge 109 is for calculating the temperature change rate of the wafer 104 based on the temperature acquired by the temperature probe 108.

[0029] In other embodiments, the temperature monitoring unit may be realized by other types of temperature sensors, and the temperature probe 108 may be installed inside the process chamber. Those skilled in the art may select according to the actual situation.

[0030] The controller 110 is for calculating the temperature change rate of the wafer 104 based on the temperature acquired by the temperature monitoring unit, and if the temperature change rate is outside a set temperature change rate range, for sending a first control signal to the ventilation mechanism and / or a second control signal to the intake mechanism to control the temperature change rate within the temperature change rate range.

[0031] The ventilation mechanism is connected to the process chamber 101 and is for introducing a gas that does not react with the wafer 104 into the process chamber 101 in response to the received first control signal so as to control the rate of change in temperature of the wafer 104 by adjusting the air pressure in the process chamber 101. The gas that does not react with the wafer 104 is, for example, an inert gas such as argon gas or nitrogen gas.

[0032] In some alternative embodiments, the vent mechanism includes a vent line communicating with the process chamber 101, the vent line having a vent valve 106 electrically connected to a controller 110, the controller 110 configured to send a first control signal to the vent valve 106, and the vent valve 106 configured to open or close in response to the first control signal to connect or disconnect the vent line.

[0033] The suction mechanism is connected to the process chamber 101 and is for suctioning the process chamber 101 in response to the received second control signal so as to control the rate of change of temperature of the wafer 104 by adjusting the air pressure in the process chamber 101.

[0034] In some optional embodiments, the intake mechanism includes an intake line communicating with the process chamber 101, and the intake line is provided with an exhaust valve 107 electrically connected to a controller 110, the controller 110 is configured to send a second control signal to the exhaust valve 107, and the exhaust valve 107 is configured to open or close in response to the second control signal to connect or disconnect the intake line.

[0035] In this embodiment, the controller 110 may be a microprocessor such as a PLC or a PC, and the calculation of the temperature change rate of the wafer may be performed by the temperature detector 109 or the controller 110. The controller 110 sends a first control signal to the ventilation mechanism and / or sends a second control signal to the suction mechanism, and the ventilation mechanism can introduce a gas that does not react with the wafer into the process chamber according to the received first control signal, and the suction mechanism can suction the process chamber according to the received second control signal, thereby realizing the adjustment of the air pressure in the process chamber 101, thereby indirectly adjusting the heat transfer between the wafer and the hot or cold source so as to control the temperature change rate of the wafer until the temperature change rate falls within the temperature change rate range, and further realizing the accurate control of the temperature change rate of the wafer, and effectively improving the temperature adjustment efficiency of the process chamber 101, while avoiding the particle contamination problem caused by the wafer being cooled too fast in the prior art.

[0036] Example 2 3 is a structural schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention. As shown in FIG. 3, the present embodiment provides a semiconductor processing apparatus, which includes a process chamber 101 and a temperature change rate control device in the first embodiment.

[0037] In some alternative embodiments, a bracket 103 and a cooling plate 102 are provided in the process chamber 101, and the bracket 103 supports the wafer 104 above the cooling plate 102 to provide a gap between the wafer 104 and the cooling plate 102. A dielectric window 105 is provided in the process chamber 101, and a temperature probe 108 is provided at a position corresponding to the dielectric window 105 so as to acquire the temperature of the wafer 104 located in the process chamber 101 through the dielectric window 105.

[0038] In a specific implementation, when the wafer 104 needs to be cooled, a cooling liquid can be introduced into the cooling plate 102, and the cooling liquid can circulate to indirectly carry away the heat of the wafer 104. Since the process chamber 101 is filled with an inert gas, such as argon gas, which does not react with the wafer 104, the wafer 104 (e.g., silicon wafer) is cooled and cooled mainly by the heat conduction between the inert gas and the cooling plate 102, and the higher the pressure of the inert gas in the process chamber 101, the faster the heat conduction between the inert gas and the cooling plate 102, so the silicon wafer is cooled and cooled, and conversely, the lower the temperature drop rate. Therefore, the air pressure in the process chamber 101 can be adjusted by the temperature change rate control device, and the heat conduction between the wafer 104 and the cooling plate 102 can be indirectly adjusted, so that the temperature change rate of the wafer 104 can be controlled within a preset temperature change rate range, and the temperature change rate of the wafer 104 can be accurately controlled, and the problem of particle contamination caused by the wafer 104 being cooled too fast can be avoided.

[0039] In other embodiments, the temperature change rate control device of the present invention may also be applied to other types of heating processes of the process chamber 101, for example, by heating the base or the chamber wall to heat the wafer 104 in the process chamber 101, and adjusting the air pressure in the process chamber 101 through the temperature change rate control device, thereby indirectly adjusting the thermal conduction between the wafer 104 and the heat source until the heating rate of the wafer 104 falls within a preset heating rate range, thereby realizing accurate control of the heating rate of the wafer 104.

[0040] Example 3 4 is a flow chart of a method for controlling a temperature drop rate of a silicon wafer according to the present invention. As shown in FIG. 4, this embodiment provides a method for controlling a temperature change rate, which is applied to a process chamber of a semiconductor processing equipment. The method for controlling a temperature change rate uses the temperature change rate control device in the above embodiment 1, and includes the following steps S101 and S102.

[0041] Step S101: Obtain the temperature of the wafer 104 located in the process chamber 101 in real time, and calculate the temperature change rate of the wafer 104 based on the temperature; In this step, the temperature at a predetermined position of the wafer is collected within a unit time by the temperature measuring probe 108 and the temperature measuring device 109, and the controller 110 calculates the change value of the wafer temperature per second based on the temperature acquired by the temperature measuring device 109 to determine the temperature change rate of the wafer. The predetermined position may be at least one predetermined temperature measuring point or predetermined temperature measuring area on the wafer, and if there is only one temperature measuring point at the predetermined temperature measuring point, the temperature change rate of the wafer can be determined by monitoring the temperature change at the one temperature measuring point, and if the predetermined position is multiple predetermined temperature measuring points or predetermined temperature measuring areas, the temperature drop rate is the change value of the average temperature in the multiple predetermined temperature measuring points or predetermined temperature measuring areas per second. In order to ensure that an accurate temperature change rate is obtained, it is preferable to simultaneously monitor the average temperature change value of multiple temperature measuring points as the temperature change rate of the entire wafer.

[0042] Step S102: Determine whether the temperature change rate of the wafer 104 is within a set temperature change rate range. If the temperature change rate of the wafer is out of the set temperature change rate range, send a first control signal to the ventilation mechanism and / or send a second control signal to the suction mechanism to control the temperature change rate of the wafer.

[0043] The ventilation mechanism introduces a gas that does not react with the wafer 104 into the process chamber 101 in response to the received first control signal so as to control the rate of change in temperature of the wafer 104 by adjusting the air pressure of the process chamber 101, and the suction mechanism suctions the process chamber 101 in response to the received second control signal so as to control the rate of change in temperature of the wafer 104 by adjusting the air pressure of the process chamber 101; Next, the above step S Return to 101, If the temperature change rate of the wafer 104 is within the set temperature change rate range, the above step S Return to 101.

[0044] In some alternative embodiments, as shown in FIG. 5, the method for controlling the temperature change rate includes the following steps S201 to S204: S Including 205, Step S201: Obtain the temperature of the wafer 104 located in the process chamber 101 in real time, and calculate the temperature change rate of the wafer 104 based on the temperature; Step S202: Determine whether the temperature change rate of the wafer 104 exceeds the temperature change rate range or falls below the temperature change rate range; If the temperature change rate of the wafer 104 exceeds the above temperature change rate range, step S203 is performed. If the temperature change rate of the wafer 104 is below the temperature change rate range, step S204 is performed. If the temperature change rate of the wafer 104 is within the temperature change rate range, step S Return to 201, Step S203: Send a second control signal to the suction mechanism to cause the suction mechanism to suction the process chamber 101 according to the received second control signal to reduce the air pressure in the process chamber 101; and then: S Do 205, Step S204: Send a first control signal to the vent mechanism so that the vent mechanism introduces a gas that does not react with the wafer 104 into the process chamber 101 in response to the received first control signal to increase the air pressure in the process chamber 101; and then: S Do 205, Steps S 205. Determine whether the temperature change rate of the wafer 104 exceeds the temperature change rate range, falls below the temperature change rate range, or is within the temperature change rate range. If the temperature change rate of the wafer 104 exceeds the above temperature change rate range, perform step S203. If the temperature change rate of the wafer 104 falls below the temperature change rate range, perform step S204. If the temperature change rate of the wafer 104 is within the temperature change rate range, perform step S205. S Return to 201.

[0045] In some alternative embodiments, the temperature change rate range may be between 4° C. / s and 6° C. / s, and is preferably 5° C. / s.

[0046] 2 is taken as an example, the ventilation mechanism includes a ventilation pipe communicating with the process chamber 101, the ventilation pipe is provided with a ventilation valve 106 electrically connected to a controller 110, the controller 110 is for sending a first control signal to the ventilation valve 106, and the ventilation valve 106 is for opening or closing in response to the first control signal to connect or disconnect the ventilation pipe. The intake mechanism includes an intake pipe communicating with the process chamber 101, the intake pipe is provided with an exhaust valve 107 electrically connected to the controller 110, the controller 110 is for sending a second control signal to the exhaust valve 107, and the exhaust valve 107 is for opening or closing in response to the second control signal to connect or disconnect the intake pipe.

[0047] In such a case, transmitting a second control signal to the suction mechanism so that the suction mechanism suctions the process chamber in response to the received second control signal may specifically include: This includes controlling the exhaust valve 107 to be open for a first predetermined time and then to be closed.

[0048] In some alternative embodiments, the first predetermined time period is between 0.2s and 1s, and preferably is 0.5s.

[0049] Specifically, transmitting a first control signal to the venting mechanism such that the venting mechanism introduces a gas that is non-reactive with the wafer into the process chamber in response to the received first control signal includes: This includes controlling the vent valve 106 to be open for a second predetermined period of time and then to be closed.

[0050] In some alternative embodiments, the second predetermined time period is between 0.2s and 1s, and preferably is 0.5s.

[0051] In a specific implementation process, the air pressure of the inert gas in the chamber is adjusted in real time according to the actual temperature of the silicon wafer, thereby obtaining a desired cooling rate, which not only ensures that the process results, such as particle expression, are acceptable, but also minimizes the impact on the production capacity of the main machine, reduces the occupation of the process chamber 101 by the silicon wafer, and improves efficiency.

[0052] In another embodiment, when the temperature change rate control device of the present invention is applied to the heating process of other types of process chambers, the temperature change rate control method of the present invention is adopted to realize the air pressure adjustment of the process chamber by the temperature change rate control device, thereby indirectly adjusting the thermal conduction between the wafer and the heat source until the heating rate of the wafer falls within a preset heating rate range, thereby realizing accurate control of the heating rate of the wafer.

[0053] In summary, in the temperature change rate control device, method and technical solution of the semiconductor processing apparatus according to the present invention, the temperature of the wafer located in the process chamber is obtained in real time by the temperature monitoring unit, and the temperature change rate of the wafer is calculated by the controller; if the temperature change rate is out of the set temperature change rate range, a first control signal is sent to the ventilation mechanism and / or a second control signal is sent to the suction mechanism, and the ventilation mechanism can introduce gas that does not react with the wafer into the process chamber according to the received first control signal, and the suction mechanism can suction the process chamber according to the received second control signal, thereby realizing the adjustment of the air pressure in the process chamber, and thereby indirectly adjusting the heat transfer between the wafer and the hot or cold source, so as to control the temperature change rate of the wafer until the temperature change rate is within the temperature change rate range, further realizing the accurate control of the temperature change rate of the wafer, and effectively improving the temperature adjustment efficiency of the process chamber, and avoiding the particle contamination problem caused by the wafer cooling too fast in the prior art.

[0054] Although the embodiments of the present invention have been described above, the above description is illustrative, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. [Explanation of symbols]

[0055] 101 Process chamber 102 Cooling board 103 Bracket 104 Wafer 105 Dielectric window 106 Vent valve 107 Exhaust valve 108 Temperature Probe 109 Temperature meter 110 Controller

Claims

1. A temperature change rate control device for use in a process chamber of a semiconductor process device, comprising: a temperature monitoring unit, a controller connected to the temperature monitoring unit, and a ventilation mechanism and an intake mechanism, both of which are connected to the controller; the temperature monitoring unit is for acquiring a temperature of a wafer located in the process chamber in real time; the controller is for calculating a temperature change rate of the wafer based on the temperature acquired by the temperature monitoring unit, and when the temperature change rate is out of a set temperature change rate range, sending a first control signal to the ventilation mechanism and / or sending a second control signal to the intake mechanism so as to control the temperature change rate within the temperature change rate range; the vent mechanism is in communication with the process chamber and is adapted to introduce a gas that does not react with the wafer into the process chamber in response to the received first control signal so as to adjust an air pressure in the process chamber and thereby control a rate of change of a temperature of the wafer; The air suction mechanism is connected to the process chamber and is configured to suction the process chamber in response to the received second control signal so as to control the temperature change rate of the wafer by adjusting the air pressure in the process chamber.

2. 2. The temperature change rate control device of claim 1, wherein the temperature monitoring unit comprises a non-contact temperature measuring element installed outside the process chamber, the non-contact temperature measuring element being located at a position corresponding to a dielectric window in the top wall of the process chamber, and is for acquiring the temperature of a wafer located in the process chamber through the dielectric window and transmitting it to the controller.

3. 2. The temperature change rate control device according to claim 1, wherein the ventilation mechanism comprises a ventilation line communicating with the process chamber, the ventilation line is provided with a ventilation valve electrically connected to the controller, the controller is configured to send the first control signal to the ventilation valve, and the ventilation valve is configured to open or close in response to the first control signal to connect or disconnect the ventilation line.

4. 2. The temperature change rate control device according to claim 1, wherein the intake mechanism comprises an intake pipe communicating with the process chamber, the intake pipe is provided with an exhaust valve electrically connected to the controller, the controller is configured to send the second control signal to the exhaust valve, and the exhaust valve is configured to open or close in response to the second control signal to connect or disconnect the intake pipe.

5. A semiconductor process device comprising:

5. A semiconductor processing device comprising: a process chamber; and a temperature change rate control device according to claim 1.

6. 6. The semiconductor processing apparatus according to claim 5, further comprising a bracket and a cooling plate provided within the process chamber, the bracket supporting the wafer above the cooling plate to provide a gap between the wafer and the cooling plate.

7. 6. The semiconductor process apparatus according to claim 5, wherein a dielectric window is provided on a top wall of the process chamber, and the temperature monitoring unit includes a non-contact temperature measuring element installed outside the process chamber, the non-contact temperature measuring element being located at a position corresponding to the dielectric window and configured to acquire the temperature of the member to be processed located in the process chamber through the dielectric window.

8. 1. A method for controlling a temperature change rate applied to a process chamber of a semiconductor processing device, comprising: The temperature change rate control method uses the temperature change rate control device according to any one of claims 1 to 4, acquiring a temperature of a wafer located within the process chamber in real time; calculating a temperature change rate of the wafer based on the temperature, and judging whether the temperature change rate of the wafer is within a set temperature change rate range; if the temperature change rate of the wafer is out of the set temperature change rate range, sending a first control signal to the ventilation mechanism to control the temperature change rate of the wafer and / or sending a second control signal to the suction mechanism, the ventilation mechanism introducing a gas that does not react with the wafer into the process chamber in response to the received first control signal, so as to control the temperature change rate of the wafer by adjusting the air pressure of the process chamber; and suctioning the process chamber in response to the received second control signal, so as to control the temperature change rate of the wafer by adjusting the air pressure of the process chamber; Then, returning to the step of acquiring a real-time temperature of a wafer located within the process chamber; and returning to the step of acquiring the temperature of the wafer positioned in the process chamber in real time if the temperature change rate of the wafer is within a set temperature change rate range.

9. sending a first control signal to the vent mechanism and / or a second control signal to the intake mechanism when the temperature change rate of the wafer falls outside a set temperature change rate range; determining whether a temperature change rate of the wafer is above or below the temperature change rate range; If the temperature change rate of the wafer exceeds the temperature change rate range, sending the second control signal to the air intake mechanism to cause the air intake mechanism to reduce the air pressure in the process chamber, and then returning to the step of acquiring the temperature of the wafer located in the process chamber in real time; 10. The method of claim 8, further comprising: if the temperature change rate of the wafer falls below the temperature change rate range, sending a first control signal to the vent mechanism so that the vent mechanism introduces a gas that does not react with the wafer into the process chamber in response to the received first control signal to increase the air pressure in the process chamber, and then returning to the step of acquiring the temperature of the wafer located in the process chamber in real time.

10. the vent mechanism includes a vent line communicating with the process chamber, the vent line is provided with a vent valve electrically connected to the controller, the controller is configured to send the first control signal to the vent valve, the vent valve is configured to open or close in response to the first control signal to connect or disconnect the vent line; the intake mechanism includes an intake line communicating with the process chamber, the intake line is provided with an exhaust valve electrically connected to the controller, the controller is configured to send the second control signal to the exhaust valve, and the exhaust valve is configured to open or close in response to the second control signal to connect or disconnect the intake line; transmitting the second control signal to the suction mechanism such that the suction mechanism suctions the process chamber in response to the received second control signal; controlling the exhaust valve to open for a first predetermined time and then close; transmitting a first control signal to the venting mechanism such that the venting mechanism introduces a gas into the process chamber that is non-reactive with the wafer in response to the received first control signal; 10. The method of claim 9, further comprising controlling the vent valve to open for a second predetermined period of time and then to close the vent valve.

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