Semiconductor manufacturing equipment and its operation method

Abstract

According to the present invention, there is provided a semiconductor manufacturing facility and an operating method thereof, the facility including: a process chamber in which an ACL process is performed in which amorphous carbon is deposited to form an amorphous carbon film (ACL); a vacuum pump that exhausts residual gas generated in the process chamber during the ACL process from the process chamber; a chamber exhaust pipe that connects the process chamber to the vacuum pump; a plasma reactor that forms a plasma reaction region using plasma; and a gas supplier that supplies a process gas to the plasma reactor; the residual gas is exhausted from the process chamber and flows along the chamber exhaust pipe to form exhaust gas, the process gas is decomposed by the plasma in the plasma reaction region to form reactive species, the reactive species react with the exhaust gas in the chamber exhaust pipe, and the process gas is oxygen (O2) or nitrogen trifluoride (NF3).

Description

[Technical field]

[0001] The present invention relates to an exhaust gas treatment technology, and more particularly to a technology for treating exhaust gas generated in a semiconductor manufacturing process by using plasma. [Background technology]

[0002] Semiconductor devices are manufactured by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on a wafer in a process chamber using various process gases. After a semiconductor process is completed, residual gas remains in the process chamber. Since the residual gas contains harmful components such as toxic components, it is exhausted by a vacuum pump and purified by an exhaust gas treatment device such as a scrubber.

[0003] The ACL (Amorphous Carbon Layer) process is a process in which amorphous carbon is deposited to form an amorphous carbon layer (ACL) during semiconductor manufacturing. After the ACL process, residual gases generated in the process chamber are exhausted from the process chamber by a vacuum pump to form exhaust gases. The exhaust gases from the ACL process are hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y Hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y ) is deposited on the vacuum pump, degrading the performance of the vacuum pump and shortening the MTBF of the vacuum pump. Summary of the Invention [Problem to be solved by the invention]

[0004] The objective of the present invention is to develop a method for producing hydrogenated amorphous carbon (aC:H) and hydrocarbon (C:H) films that are deposited on the vacuum pump in an ACL process facility. X H YThe present invention provides a semiconductor manufacturing facility and an operating method thereof that eliminates the above-mentioned problems.

[0005] Another object of the present invention is to provide a method for producing hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y The present invention provides a semiconductor manufacturing facility and an operating method thereof that prevent the inflow of gas such as benzene into a vacuum pump. [Means for solving the problem]

[0006] In order to achieve the above object, according to one aspect of the present invention, there is provided a semiconductor manufacturing facility and an operating method thereof, the facility including: a process chamber in which an ACL process is performed in which amorphous carbon is deposited to form an amorphous carbon film (ACL); a vacuum pump that exhausts residual gas generated in the process chamber during the ACL process from the process chamber; a chamber exhaust pipe that connects the process chamber to the vacuum pump; a plasma reactor that forms a plasma reaction region using plasma; and a gas supplier that supplies a process gas to the plasma reactor; wherein the residual gas is exhausted from the process chamber and flows along the chamber exhaust pipe to form exhaust gas, the process gas is decomposed by the plasma in the plasma reaction region to form reactive species, the reactive species are supplied to the chamber exhaust pipe, and the process gas is oxygen (O2) or nitrogen trifluoride (NF3). Effect of the Invention

[0007] According to the present invention, all of the above-mentioned objects of the present invention can be achieved. Specifically, oxygen gas supplied to a plasma reactor is decomposed in a plasma region of the plasma reactor to generate heated reactive oxygen, and the generated reactive oxygen is introduced into a vacuum pump and vaporized by the vacuum pump. The hydrogenated amorphous carbon deposited on the vacuum pump is removed by reacting with the hydrogenated amorphous carbon deposited on the vacuum pump.

[0008] In addition, the hydrogenated amorphous carbon (aC:H) reacts with oxygen gas additionally supplied by the plasma reaction in the plasma reaction region of the plasma reactor to generate carbon dioxide gas, carbon monoxide gas, and water vapor, so that the hydrogenated amorphous carbon (aC:H) is prevented from being included in the gas flowing into the vacuum pump.

[0009] And the hydrocarbon (C X H Y ) is removed by reacting with fluorine (F2) generated by decomposing nitrogen trifluoride (NF3) in plasma, thereby preventing a decrease in the performance of the vacuum pump.

[0010] In addition, the hydrocarbons (C X H Y ) is decomposed in the plasma reaction region together with nitrogen trifluoride (NF3), thereby preventing a decrease in the performance of the vacuum pump. [Brief description of the drawings]

[0011] [Figure 1] 1 is a block diagram showing a schematic configuration of a semiconductor manufacturing facility according to an embodiment of the present invention; [Diagram 2] 2 is a vertical cross-sectional view of a plasma reactor in a plasma device of the semiconductor manufacturing facility shown in FIG. 1. [Diagram 3] FIG. 3 is a perspective view showing the magnetic core shown in FIG. 2. [Figure 4] 2 is a diagram illustrating a schematic configuration of an ignition system used in a plasma device of the semiconductor manufacturing facility shown in FIG. 1. [Diagram 5] 1 is a flowchart illustrating a method for operating a semiconductor manufacturing facility according to an embodiment of the present invention. [Figure 6] 6 is a graph showing the results of the operation of the semiconductor manufacturing facility shown in FIG. 5, illustrating the treatment state of hydrogenated amorphous carbon depending on the operating state of the plasma device. [Figure 7]6 is a graph showing the results of the operation of the semiconductor manufacturing equipment shown in FIG. 5, illustrating the processing state of hydrogenated amorphous carbon with and without plasma. [Figure 8] 6 is a comparative photograph showing a state in which the amount of hydrogenated amorphous carbon film in a vacuum pump is reduced as a result of the operation of the semiconductor manufacturing equipment shown in FIG. 5. [Figure 9] 6 is a graph showing a relationship between an oxygen supply flow rate and a reduction amount of hydrogenated amorphous carbon in the operation method of the semiconductor manufacturing equipment shown in FIG. 5. [Figure 10] 11 is a flowchart illustrating a method of operating a semiconductor manufacturing facility according to another embodiment of the present invention. [Figure 11] 11 is a diagram for briefly explaining a state in which hydrogenated amorphous carbon (aC:H) is treated in a plasma reactor according to the method of operating the semiconductor manufacturing facility shown in FIG. 10. [Figure 12] FIG. 13 is a block diagram showing a schematic configuration of a semiconductor manufacturing facility according to another embodiment of the present invention. [Figure 13] 13 is a vertical cross-sectional view of a plasma reactor in the plasma device of the semiconductor manufacturing facility shown in FIG. 12. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.

[0013] 1 is a block diagram showing a schematic configuration of a semiconductor manufacturing facility according to an embodiment of the present invention. Referring to FIG. 1, a semiconductor manufacturing facility 100 according to an embodiment of the present invention includes semiconductor manufacturing equipment 101 in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, exhaust equipment 103 for exhausting gas from the semiconductor manufacturing equipment 101, and a semiconductor manufacturing facility 102 for exhausting gas from the exhaust equipment 103. The exhaust gas treatment equipment 106 treats the gas discharged from the body manufacturing equipment 101, and the plasma is used to treat amorphous carbon (aC:H) and hydrocarbons (C X H Yand a plasma device 108 for treating the

[0014] The semiconductor manufacturing equipment 101 includes a process chamber 102 in which a semiconductor manufacturing process using various process gases is carried out. The process chamber 102 may include any type of process chamber commonly used for semiconductor manufacturing in the field of semiconductor manufacturing equipment technology. Residual gas generated in the process chamber 102 is purified by an exhaust gas treatment device 106 while being exhausted to the outside by an exhaust device 103. In the present embodiment, it is described that a conventional ACL (amorphous carbon layer) process is carried out in the process chamber 102. Generally, the ACL process refers to a process in which amorphous carbon is deposited in a semiconductor process to form an amorphous carbon layer (ACL). After the ACL process is carried out, hydrogenated amorphous carbon (aC:H) and hydrocarbon (C X H Y After the ACL process is performed, residual gases including hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y Residual gases including benzene, benzene derivatives, and benzene derivatives are exhausted from the process chamber 102 by the exhaust system 103 .

[0015] The exhaust device 103 exhausts hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y The exhaust equipment 103 includes a vacuum pump 104, a chamber exhaust pipe 105a that connects the process chamber 102 and the vacuum pump 104 and through which the residual gas exhausted from the process chamber 102 flows as exhaust gas, and a pump exhaust pipe 105b that extends downstream from the vacuum pump 104 and through which the exhaust gas flows.

[0016] The vacuum pump 104 creates a negative pressure on the process chamber 102 side through a chamber exhaust pipe 105a connecting the process chamber 102 and the vacuum pump 104 in order to exhaust residual gases from the process chamber 102. The vacuum pump 104 includes a structure of a vacuum pump commonly used in the field of semiconductor manufacturing equipment technology, and therefore a detailed description thereof will be omitted. Hydrogenated amorphous carbon (aC:H) and hydrocarbons (C) contained in the exhaust gas are exhausted to the vacuum pump 104 through the chamber exhaust pipe 105a. X H Y ) is flowed into the vacuum pump 104, and hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y ) is deposited to form a film. Hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y ) degrades the performance of the vacuum pump 104 and shortens the MTBF of the vacuum pump 104. Hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y ) is removed by the action of the plasma device 108.

[0017] The chamber exhaust pipe 105a connects the exhaust port of the process chamber 102 to the suction port of the vacuum pump 104 between the process chamber 102 and the vacuum pump 104. Residual gas in the process chamber 102 is exhausted through the chamber exhaust pipe 105a by the negative pressure generated by the vacuum pump 104 to form exhaust gas.

[0018] The pump exhaust pipe 105b extends downstream from the vacuum pump 104. The pump exhaust pipe 105b is connected to the discharge port of the vacuum pump 104, and the exhaust gas discharged from the vacuum pump 104 flows through the pump exhaust pipe 105b.

[0019] The exhaust gas treatment equipment 106 treats and purifies harmful components contained in the exhaust gas from the process chamber 102. The exhaust gas treatment equipment 106 includes a scrubber 107 that treats the exhaust gas. The scrubber 107 is connected to the downstream end of the pump exhaust pipe 105b and treats harmful components contained in the exhaust gas discharged from the vacuum pump 104. The scrubber 107 may be any type of scrubber that is commonly used in the semiconductor manufacturing equipment technology field for treating exhaust gas.

[0020] The plasma device 108 is a plasma device for condensing hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y The plasma device 108 converts oxygen (O2) into excited oxygen atoms (O), which are reactive species, using plasma to remove hydrogenated amorphous carbon. * ). The plasma device 108 also produces hydrocarbons (C X H Y In order to remove nitrogen trifluoride (NF3), excited fluorine atoms (F), which are reactive species, are generated from nitrogen trifluoride (NF3) using plasma. * ) and fluorine (F2). The plasma device 108 includes a plasma reactor 110 provided on the chamber exhaust pipe 105a, a power supply 180 that supplies power to the plasma reactor 110, and a gas supplier 185 that supplies oxygen gas or nitrogen trifluoride (NF3) to the plasma reactor 110.

[0021] The plasma reactor 110 is provided on the chamber exhaust pipe 105a and uses plasma to decompose oxygen gas or nitrogen trifluoride supplied from a gas supplier 185. In the plasma reactor 110, oxygen (O2) is generated by oxygen atoms (O * In the plasma reactor 110, nitrogen trifluoride (NF3) is decomposed into fluorine atoms (F * ), excited nitrogen atom (N * ), fluorine (F2), nitrogen (N2) and electrons (e). The excited oxygen atoms (O* ) flows into the vacuum pump 104 and reacts with the hydrogenated amorphous carbon deposited on the vacuum pump 104. Fluorine (F2) generated by decomposition of nitrogen trifluoride (NF3) in the plasma reactor 110 reacts with the hydrocarbon (C X H Y ) in the present embodiment. In the present embodiment, the plasma reactor 110 is described as an inductively coupled plasma reactor using inductively coupled plasma (ICP). In the present embodiment, the plasma reactor 110 is described as using inductively coupled plasma, but the present invention is not limited thereto. In the present invention, the plasma reactor includes any type of plasma reactor that generates a plasma reaction (e.g., a plasma reactor using capacitively coupled plasma (CCP)), which also falls within the scope of the present invention.

[0022] 2 shows a schematic configuration of the plasma reactor 110 in a vertical cross-sectional view. Referring to FIG. 2, the plasma reactor 110 includes a reaction chamber 120, a magnetic core 130 arranged to surround the reaction chamber 120, an igniter 140 for igniting plasma, a first coil (not shown) wound around the magnetic core 130 and supplied with power from a power source 180, and a second coil (not shown) wound around the magnetic core 130 and supplying power to the igniter 140.

[0023] The reaction chamber 120 is a toroidal chamber and includes a gas inlet 121, a gas outlet 123 spaced apart from the gas inlet 121, and a plasma reaction section 125 connecting the gas inlet 121 and the gas outlet 123 and where a plasma reaction occurs. Gas exhausted from the process chamber (102 in FIG. 1) is introduced into the vacuum pump 104 via the reaction chamber 120 through a chamber exhaust pipe (105a in FIG. 1).

[0024] The gas inlet 121 is a short tube extending around a linear extension axis (X), and the front end of the gas inlet 121 is opened to form an inlet 122 through which gas flows in. The inlet 122 is connected to the exhaust port of the process chamber (102 in FIG. 1) through a chamber exhaust pipe (105a in FIG. 1). The gas inlet 121 is formed with a gas injection port 121a through which gas supplied from a gas supplier 185 is injected.

[0025] The gas exhaust part 123 is a short tube located coaxially and spaced apart from the gas inlet part 121 on the extension axis (X), and the rear end of the gas exhaust part 123 is opened to form an exhaust port 124 through which gas is exhausted. The exhaust port 124 is connected to a vacuum pump through a chamber exhaust pipe (105a in FIG. 1). The intake port is connected to the intake port of the pump (104 in FIG. 1).

[0026] The plasma reaction unit 125 connects the gas inlet 121 and the gas outlet 123, which are separated from each other, and forms a plasma reaction area (A) in which a thermal reaction and a plasma reaction with respect to the gas occur. The plasma reaction unit 125 includes a first connection pipe part 126 and a second connection pipe part 127, which are located on both sides of the extension axis (X) and are spaced apart from each other. The first connection pipe part 126 and the second connection pipe part 127 extend parallel to the extension axis (X) and communicate with the gas inlet 121 and the gas outlet 123. Thus, in the plasma reaction unit 125, plasma is generated along a circular discharge loop (R) as indicated by a wavy line. The gas flowing in through the gas injection port 121a is decomposed by the plasma in the plasma reaction area (A). When oxygen gas is flowed in through the gas injection port 121a, the decomposition reaction of oxygen gas by plasma in the plasma reaction area (A) is the same as the following reaction formula 1 and reaction formula 2. Reaction formula 1

[0027] O2+hv→O * +O *

[0028] O * :Excited oxygen atom Reaction formula 2

[0029] O2+e - →O+O -

[0030] Excited oxygen atoms (O) generated by plasma in the plasma reaction region (A). * ) enhances the reactivity with heated hydrogenated amorphous carbon. Excited oxygen atoms (O * In order to increase the production rate and temperature of H 2 O 2 , it is advantageous to apply a higher power to the plasma reactor 110 .

[0031] In this embodiment, the reaction chamber 120 is described as being configured by combining a first chamber member 120a and a second chamber member 120b. The first chamber member 120a includes the entire gas inlet 121, and a part of the first connecting pipe 126 and a part of the second connecting pipe 127 connected to the gas inlet 121. The second chamber member 120b includes the entire gas exhaust portion 123, and a part of the first connecting pipe 126 and a part of the second connecting pipe 127 connected to the gas exhaust portion 123.

[0032] The magnetic core 130 is disposed to surround the reaction chamber 120. In this embodiment, the magnetic core 130 is described as a ferrite core that is commonly used in inductively coupled plasma generators. FIG. 3 shows a perspective view of the magnetic core 130. Referring to FIGS. 2 and 3, the magnetic core 130 includes an annular hook 131 that surrounds the plasma reaction section 125 of the reaction chamber 120 from the outside, and a connecting section 135 that crosses the inner region of the hook 131.

[0033] The hook 131 is a rectangular ring-shaped member arranged perpendicular to the extension axis (X) and externally surrounds the plasma reaction section 125 of the reaction chamber 120. The rectangular hook 131 has two opposing long sides 132a, 132b and two opposing short sides 133a, 133b.

[0034] The connecting portion 135 extends linearly to connect between the two opposing long side portions 132a, 132b of the hook 131. Both ends of the connecting portion 135 are connected to the centers of the two long side portions 132a, 132b. The connecting portion 135 is disposed to pass through a gap 128 formed between the first connecting pipe portion 126 and the second connecting pipe portion 127 of the reaction chamber 120. The connecting portion 135 separates the internal region of the hook 131 into a first through hole 136 and a second through hole 137. The first connecting pipe part 126 of the reaction chamber 120 passes through the first through hole 136, and the second connecting pipe part 127 of the reaction chamber 120 passes through the second through hole 137. As a result, the magnetic core 130 is in a form surrounding the first connecting pipe part 126 and the second connecting pipe part 127 of the reaction chamber 120 from the outside.

[0035] The igniter 140 ignites plasma by receiving high voltage power from the power source 180. In this embodiment, the igniter 140 is described as being located adjacent to the gas inlet 121 in the plasma reaction section 125 of the reaction chamber 120, but the present invention is not limited thereto.

[0036] 4 shows a first coil and a second coil wound around the magnetic core 130. Referring to FIG. 4, the first coil 150 is wound around the first long side 132a of the magnetic core 130 and connected to a power source 180. The first coil 150 forms an induced magnetic flux in the magnetic core 130 when a radio frequency AC power is applied through the power source 180. An induced electric field is generated by the induced magnetic flux formed in the magnetic core 130, and plasma is generated by the generated induced electric field. In the present embodiment, the first coil 150 is described as being wound twice around the magnetic core 130, but the present invention is not limited thereto.

[0037] The second coil 160 is wound around the second long side portion 132b of the magnetic core 130 separately from the first coil 150, and is connected to the igniter 140 through a switch circuit (relay) 190. An induced electromotive force is generated in the second coil 160 to supply power to the igniter 140. That is, the first coil 150, the second coil 160, and the magnetic core 130 function as a transformer, so that a high voltage for operating the igniter 140 is generated and output in the second coil 160. For this purpose, the second coil 160 is wound around the magnetic core 130 with a larger number of turns than the first coil 150, and in this embodiment, it is described that the second coil 160 is wound six times.

[0038] The power source 180 applies radio frequency AC power to the first coil 150 to generate inductively coupled plasma. In this embodiment, the first coil 150, the second coil 160, and the magnetic core 130 function as a transformer. That is, the first coil 150, the second coil 160, and the magnetic core 130 serve as a primary coil, a secondary coil, and an iron core in the transformer. By making the number of turns of the second coil 160 larger than the number of turns of the first coil 150, it is possible to apply boosted high voltage power to the igniter 140.

[0039] The gas supplier 185 stores oxygen gas or nitrogen trifluoride as a process gas, and supplies the stored oxygen gas or nitrogen trifluoride to the plasma reactor 110 through a gas supply pipe 188. In this embodiment, it is described that the gas supply pipe 188 is connected to a gas injection port 121a formed in the gas inlet part 121 of the reaction chamber 120 in the plasma reactor 110. As shown, the oxygen gas supplied by the gas supplier 185 and flowing into the plasma reactor 150 is generated by condensing excited oxygen atoms (O * Although not shown, nitrogen trifluoride supplied by the gas supply 185 and flowing into the plasma reactor 150 is decomposed into fluorine atoms (F * ), excited nitrogen atom (N *), fluorine (F2), nitrogen (N2) and electrons (e).

[0040] The present invention provides a method for operating a plasma apparatus for treating exhaust gas from a process chamber. FIG. 5 is a flow chart for explaining a method for operating a semiconductor manufacturing facility according to an embodiment of the present invention. The method for operating a semiconductor manufacturing facility according to an embodiment of the present invention shown in FIG. 5 is a method for operating a vacuum pump (10 in FIG. 1) of the semiconductor manufacturing facility 100 shown in FIG. 1 and 2 together with FIG 5, a method of operating a semiconductor manufacturing facility according to an embodiment of the present invention includes an ACL process step (step S100) in which an amorphous carbon layer (ACL) deposition process is performed in a process chamber 102, a process interruption step (step S110) in which the ACL process performed in the process chamber 102 is interrupted, and a deposit removal step (step S120) in which hydrogenated amorphous carbon or hydrocarbon deposited in the vacuum pump 104 is removed while the ACL process is interrupted in the process chamber 102 after the process interruption step (step S110).

[0041] In the ACL process step (step S100), an amorphous carbon film (ACL) deposition process is performed in the process chamber 102. The amorphous carbon film (ACL) deposition process includes the configuration of an ACL process that is commonly used in semiconductor manufacturing processes, so a detailed description thereof will be omitted. Residual gas generated in the process chamber 102 while the ACL process step (step S100) is being performed is exhausted from the process chamber 102 through the chamber exhaust pipe 105a and the pump exhaust pipe 105b by the operation of the vacuum pump 104 to form exhaust gas. The exhaust gas from the ACL process is composed of hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y The hydrogenated amorphous carbon and hydrocarbons involved in the ACL process are deposited in a vacuum pump 104.

[0042] In the process interruption step (step S110), the ACL process performed in the process chamber 102 and the discharge of residual gas generated by the ACL process are interrupted. The process interruption step (step S110) may include interrupting the process for cleaning the process chamber 102. In a state in which the ACL process performed in the process chamber 102 and the discharge of residual gas generated by the ACL process are interrupted due to the process interruption step (step S110), a deposit removal step (step S120) is performed.

[0043] In the deposit removal step (step S120), the hydrogenated amorphous carbon and hydrocarbons deposited in the vacuum pump 104 are removed while the ACL process performed in the process chamber 102 and the exhaust of residual gases generated by the ACL process are stopped. The deposit removal step (step S120) is performed by supplying oxygen gas or nitrogen trifluoride to the plasma reactor 110 by the gas supplier 185 while the plasma reactor 110 is in operation.

[0044] When oxygen gas is supplied to the plasma reactor 110, the oxygen gas (O2) supplied to the operating plasma reactor 110 is decomposed by the plasma in the plasma reaction region (A) to generate heated excited oxygen atoms (O * ) is generated. Heated excited oxygen atoms (O * ) is flowed into the vacuum pump 104. The hydrogenated amorphous carbon deposited in the vacuum pump 104 is oxidized by reacting with the heated excited oxygen atoms (O*) flowed into the vacuum pump 104. The hydrogenated amorphous carbon is oxidized to produce carbon dioxide gas (CO2) and water vapor (H2O), which are removed.

[0045] 6 to 8 relate to test results showing the effect of removing hydrogenated amorphous carbon deposited on the vacuum pump 104 according to the method of operating the semiconductor manufacturing equipment shown in FIG.

[0046] The graph of FIG. 6 shows the concentration of carbon dioxide (CO2) in the vacuum pump 104 depending on the operating state (On, Off) of the plasma device 108. In the graph of FIG. 6, the horizontal axis is time (minutes) and the vertical axis is carbon dioxide concentration (ppm). According to the graph of FIG. 6, it is measured that the concentration of carbon dioxide is high when the plasma reactor 110 is operating. The generation of carbon dioxide means the removal of hydrogenated amorphous carbon through oxidation. From the graph of FIG. 6, the removal of hydrogenated amorphous carbon deposited on the vacuum pump 104 is confirmed, and the higher the temperature of the excited oxygen atoms flowing into the vacuum pump 104, the higher the effect of removing hydrogenated amorphous carbon. It is confirmed that this will be the case.

[0047] The graph in FIG. 7 shows the concentration of carbon dioxide (CO2) in the vacuum pump 104 depending on the operating state (On, Off) of the plasma reactor 110. In the graph in FIG. 7, the horizontal axis is time (minutes) and the vertical axis is carbon dioxide concentration (ppm). According to the graph in FIG. 7, when only oxygen is supplied without plasma, there is almost no effect of removing the hydrogenated amorphous carbon deposited on the vacuum pump 104, and the heated excited oxygen atoms (O * It has been confirmed that when the hydrogenated amorphous carbon deposited on the vacuum pump 104 is removed, the hydrogenated amorphous carbon can be removed by the vacuum pump 104.

[0048] The photographs in Fig. 8 show the effect of removing hydrogenated amorphous carbon deposited by the vacuum pump 104 using the plasma device 108. The photograph on the left side of Fig. 8 shows the thickness of the deposit by position at the vacuum pump 104 when the plasma device 108 is not operating, and the photograph on the right side of Fig. 8 shows the thickness of the deposit by position at the vacuum pump 104 when the plasma device 108 is operating. According to Fig. 8, the average thickness of the deposit in the left photograph is 67.6 μm, and the average thickness of the deposit in the right photograph is 45.7 μm, confirming that the action of the plasma device 108 reduced the deposition thickness of by-products by about 32%.

[0049] The test data graph of FIG. 9 shows the relationship between the oxygen flow rate (slm) supplied to the plasma reactor 110 operated with 7 kW power applied, and the removal efficiency of hydrogenated amorphous carbon deposited by the vacuum pump 104. In FIG. 9, the horizontal axis represents the oxygen flow rate (slm) supplied to the plasma reactor 110, the left vertical axis represents the oxidation reaction participation ratio (%) of the oxygen supplied to the plasma reactor 110, and the right vertical axis represents the thickness reduction (μm) of the hydrogenated amorphous carbon film deposited by the vacuum pump 104. Referring to FIG. 9, it is confirmed that the removal efficiency of hydrogenated amorphous carbon deposited by the vacuum pump 104 is the best when the oxygen flow rate supplied to the plasma reactor 110 is 15 slm. This is because the number of excited oxygen atoms (O * ) increases proportionally, but when the oxygen flow rate supplied to the plasma reactor 110 is in the range of 15 slm or more, the amount of excited oxygen atoms (O * ) does not increase any more. Therefore, by supplying oxygen to the plasma reactor 110 at an oxygen flow rate that provides the highest excited oxygen atom (O*) generation rate according to the operating power of the plasma reactor 110, unnecessary oxygen consumption can be prevented, thereby improving efficiency. In addition, the degree of oxidation reaction of the hydrogenated amorphous carbon deposited on the vacuum pump 104 increases in proportion to the temperature inside the vacuum pump 104 up to an upper limit. As a result, the amount of excited oxygen atoms (O * It is advantageous to apply high power to the plasma reactor 110 to increase the temperature of the

[0050] In the present embodiment, the thickness reduction rate of the hydrogenated amorphous carbon film deposited on the vacuum pump 104 satisfies the following proportional relationship:

[0051] Carbon film thickness reduction rate ∝ Oxygen flow rate (slm) × Reaction time (min.) × Temperature (K)

[0052] Although not shown in the figure, when nitrogen trifluoride (NF3) is supplied to the plasma reactor 110, the nitrogen trifluoride supplied to the plasma reactor 110 during operation is converted into fluorine atoms (F * ), excited nitrogen atom (N * The fluorine (F2) produced by the decomposition of nitrogen trifluoride in the plasma reactor 110 is pumped through the vacuum pump 10. 4. The fluorine (F2) that flows into the vacuum pump 104 is mixed with the hydrocarbon (C X H Y ) to produce carbon tetrafluoride (CF4) and hydrofluoric acid (HF), X H Y ) is removed.

[0053] FIG. 10 is a flow chart for explaining a method of operating a semiconductor manufacturing facility according to another embodiment of the present invention. The method of operating a semiconductor manufacturing facility according to another embodiment of the present invention shown in FIG. 10 is also a method of operating the semiconductor manufacturing facility 100 shown in FIG. 1. Referring to FIG. 1 together with FIG. 10, the method of operating a semiconductor manufacturing facility according to another embodiment of the present invention includes an ACL process step (step S200) in which an amorphous carbon film (ACL) deposition process is performed in a process chamber 102, an exhaust step (step S210) in which residual gas in the process chamber 102 generated in the ACL process step (step S200) is exhausted from the process chamber 102 by operating an exhaust device 103 to form an exhaust gas, and a method of separating hydrogenated amorphous carbon (aC:H) and hydrocarbons (C:H) contained in the exhaust gas formed by the exhaust step (step S210). X H Y ) and a gas processing stage (step S220) in which the gas is processed.

[0054] In the ACL process step (step S200), an amorphous carbon film (ACL) deposition process is performed in the process chamber 102. The amorphous carbon film (ACL) deposition process includes the configuration of an ACL process that is commonly used in semiconductor manufacturing processes, so a detailed description thereof will be omitted. Residual gas generated in the process chamber 102 while the ACL process step (step S200) is being performed is exhausted from the process chamber 102 through the chamber exhaust pipe 105a and the pump exhaust pipe 105b by the operation of the vacuum pump 104 to form exhaust gas. The exhaust gas from the ACL process is composed of hydrogenated amorphous carbon (aC:H) and hydrocarbons (C X H Y ).

[0055] In the exhaust step (step S210), after the completion of the ACL process step (step S200), the vacuum pump 104 of the exhaust equipment 103 is operated to exhaust residual gas generated in the process chamber 102 during the ACL process step (step S200) from the process chamber 102. The residual gas exhausted from the process chamber 102 flows along the chamber exhaust pipe 105a and the pump exhaust pipe 105b to form exhaust gas, which is then introduced into the scrubber 107. While the exhaust step (step S210) is being performed, the gas treatment step (step S220) is also performed.

[0056] In the gas treatment step (step S220), hydrogenated amorphous carbon (aC:H) or hydrocarbons (C X H Y ) is removed before being introduced into the vacuum pump 104. In the gas treatment step (step S220), the plasma reactor 110 is operated, and oxygen gas or nitrogen trifluoride is supplied to the plasma reactor 110 by the gas supplier 185.

[0057] The process of treating hydrogenated amorphous carbon (aC:H) contained in the exhaust gas in the gas treatment step (step S220) is shown in Figure 11. Referring to Figure 11, hydrogenated amorphous carbon (aC:H) and oxygen gas (O2) are introduced into a plasma reaction region (A) formed in a plasma reactor 110. The hydrogenated amorphous carbon (aC:H) introduced into the plasma reaction region (A) is contained in the gas exhausted from the process chamber (102 in Figure 1), and the oxygen gas (O2) introduced into the plasma reaction region (A) is supplied from a gas supplier (185 in Figure 1).

[0058] The hydrogenated amorphous carbon (aC:H) introduced into the plasma reaction region (A) is converted into carbon atoms (C * ) and excited hydrogen atoms (H * The oxygen gas (O2) flowing into the plasma reaction area (A) is decomposed into excited oxygen atoms (O * )

[0059] Excited carbon atoms (C) generated by the plasma reaction in the plasma reaction region (A) * ) , excited hydrogen atom (H * ) and excited oxygen atoms (O * During this process, a substitution (oxidation) reaction occurs to produce carbon dioxide gas (CO2), carbon monoxide gas (CO), and water vapor (H2O).

[0060] That is, the hydrogenated amorphous carbon (aC:H) in the plasma reaction region (A) of the plasma reactor 150 reacts with oxygen gas (O2) additionally supplied by the plasma reaction to generate carbon dioxide gas (CO2), carbon monoxide gas (CO) and water vapor (H2O). This prevents the gas discharged from the plasma reactor 110 and flowing into the vacuum pump 104 from containing hydrogenated amorphous carbon (aC:H), which is a cause of failure of the vacuum pump 104.

[0061] In the gas treatment step (step S220), the hydrocarbons (C X H Y ) is treated. In this case, although not shown, hydrocarbons (C X H Y ) and nitrogen trifluoride (NF3) are flowed into a plasma reaction region (A) formed in the plasma reactor 110. X H Y ) is contained in the exhaust gas from the ACL process, and nitrogen trifluoride (NF3) flowing into the plasma reaction area (A) is supplied from a gas supplier (185 in FIG. 1). X H Y ) and nitrogen trifluoride (NF3) are decomposed atomically by plasma reaction, then combined to form components including carbon tetrafluoride (CF4), hydrofluoric acid (HF), ammonia (NH3), and hydrogen cyanide (HCN), which are then decomposed into hydrocarbons (C X H Y ) is processed.

[0062] 12 is a block diagram showing a schematic configuration of a semiconductor manufacturing facility according to another embodiment of the present invention. Referring to FIG. 12, the semiconductor manufacturing facility 200 includes a semiconductor manufacturing equipment 101, an exhaust device 103 for exhausting gas from the semiconductor manufacturing equipment 101, an exhaust gas treatment device 106 for treating the gas exhausted from the semiconductor manufacturing equipment 101 by the exhaust device 103, and a plasma-hydrogenated amorphous carbon (aC:H) and hydrocarbon (C X H Y 1. The semiconductor manufacturing facility 200 includes a plasma device 208 for treating a semiconductor substrate. Since the remaining configuration of the semiconductor manufacturing facility 200 except for the plasma device 208 is substantially the same as that of the semiconductor manufacturing facility 100 shown in FIG. 1, only the plasma device 208 will be described here.

[0063] The plasma device 208 includes a plasma reactor 210, a power supply 180 that supplies power to the plasma reactor 210, and a gas supplier 185 that supplies gas to the plasma reactor 210. Since the remaining configuration of the plasma device 208, except for the plasma reactor 210, is substantially the same as that of the plasma device 108 shown in FIG. 1, only the plasma reactor 210 will be described here.

[0064] 13 shows a schematic configuration of the plasma reactor 210 in a vertical cross-sectional view. Referring to FIG. 13, the plasma reactor 210 includes a reaction chamber 220, a magnetic core 130 arranged to surround the reaction chamber 220, an igniter 140 for igniting plasma, and a coil (not shown) wound around the magnetic core 130 and supplied with power from a power source 180. The plasma reactor 210 is substantially the same as the reaction chamber 120 shown in FIG. 2 in other configurations except for the reaction chamber 220, so only the reaction chamber 220 will be described here.

[0065] The reaction chamber 220 is a toroidal chamber and includes a gas inlet 121, a gas outlet 123 spaced apart from the gas inlet 121, and a plasma reaction section 125 connecting the gas inlet 121 and the gas outlet 123 where a plasma reaction occurs. The reaction chamber 120 generates reactive species by decomposing a gas supplied from a gas supplier 185 using plasma. The overall structure of the reaction chamber 220 is approximately the same as that of the reaction chamber 120 shown in FIG. 2. However, the inlet 122 of the gas inlet 121 is connected to the inlet pipe 186. 12. The gas exhaust unit 123 is connected to a gas supplier 185 through the exhaust pipe 187, and the exhaust port 124 of the gas exhaust unit 123 is connected to a chamber exhaust pipe (105a in FIG. 12) through an exhaust pipe 187, and is different from the reaction chamber 120 shown in FIG. 2 in that it does not have a separate gas injection port (121a in FIG. 2).

[0066] The gas flowing in through the inlet 122 is decomposed by the plasma formed in the plasma reaction region (A) to generate reactive species. As shown, when nitrogen trifluoride (NF3) is flowed in through the inlet 122, the nitrogen trifluoride (NF3) is decomposed in the plasma reaction region (A) to generate excited fluorine atoms (F * Specifically, in the plasma reaction region (A), nitrogen trifluoride (NF3) is converted into nitrogen (N2), fluorine (F2), and excited nitrogen atoms (N * ), excited fluorine atoms (F * Although not shown, when oxygen (O2) is introduced through the inlet 122, the oxygen (O2) is decomposed in the plasma reaction region (A) into excited oxygen atoms (O * The reactive species generated in the plasma reaction region (A) are supplied to the chamber exhaust pipe (105a in FIG. 12) through an exhaust pipe 187.

[0067] Although not shown in the figure, the semiconductor manufacturing facility operation method shown in FIG. 5 can be similarly applied to the semiconductor manufacturing facility 200 shown in FIG. 12. That is, excited oxygen atoms (O * ) is supplied to the vacuum pump 106 to remove the hydrogenated amorphous carbon deposited on the vacuum pump 106, or fluorine (F2) generated from the plasma reactor 210 is supplied to the vacuum pump 106 to remove the hydrocarbon (C X H Y ) is removed.

[0068] Although the present invention has been described above through the embodiments, the present invention is not limited thereto. The above embodiments may be modified or changed without departing from the spirit and scope of the present invention, and those skilled in the art will understand that such modifications and changes also belong to the present invention.

Claims

1. a process chamber in which an amorphous carbon layer (ACL) process is performed in which amorphous carbon is deposited to form an ACL; a vacuum pump for exhausting residual gas generated in the process chamber during the ACL process from the process chamber; a chamber exhaust pipe connecting the process chamber and the vacuum pump; a plasma reactor that uses plasma to form a plasma reaction region; a gas supplier for supplying a process gas containing oxygen to the plasma reactor; The residual gas is discharged from the process chamber and flows along the chamber exhaust pipe to form an exhaust gas. The oxygen is decomposed by the plasma in the plasma reaction region to form excited oxygen atoms (O*); The excited oxygen atoms (O*) are introduced into the vacuum pump and react with the hydrogenated amorphous carbon deposited on the vacuum pump to oxidize the hydrogenated amorphous carbon; The gas supplier adjusts a flow rate of oxygen gas supplied to the plasma reactor so that a thickness reduction rate of the deposited hydrogenated amorphous carbon has a maximum value.

2. The excited oxygen atom (O ＊ 2. The semiconductor manufacturing facility according to claim 1, wherein the gaseous mixture is supplied to the chamber exhaust pipe through an exhaust pipe that connects the plasma reactor and the chamber exhaust pipe.

3. the plasma reactor is provided on the chamber exhaust pipe, The plasma reactor converts hydrogenated amorphous carbon (a-C:H) contained in the exhaust gas into excited carbon atoms (C ＊ ) and excited hydrogen atoms (H ＊ ) and The excited carbon atom (C ＊ ) is the excited oxygen atom (O ＊ ) before being introduced into the vacuum pump. ２ ) or carbon monoxide gas (CO), The excited hydrogen atom (H ＊ ) is the excited oxygen atom (O ＊ ) before being introduced into the vacuum pump. ２ 2. The semiconductor manufacturing facility according to claim 1, wherein the nitrogen oxide is oxidized to oxygen.

4. The semiconductor manufacturing facility according to claim 1 , wherein the plasma reactor is provided on the chamber exhaust pipe.

5. 1. A method for operating a semiconductor manufacturing facility, comprising: a process chamber in which an ACL process is performed in which amorphous carbon is deposited to form an amorphous carbon film (ACL); a vacuum pump that exhausts residual gas generated in the process chamber during the ACL process from the process chamber; a chamber exhaust pipe that communicates the process chamber with the vacuum pump; a plasma reactor that forms a plasma reaction region using plasma; and a gas supplying device that supplies a process gas including oxygen to the plasma reactor, removing a deposit deposited on the vacuum pump; In the deposit removing step, oxygen contained in the processing gas supplied to the plasma reactor by the gas supplier is decomposed in the plasma reaction region to generate excited oxygen atoms (O*), and the deposit reacts with the excited oxygen atoms (O*) to be removed, In the deposit removing step, a flow rate of oxygen gas supplied to the plasma reactor is adjusted by the gas supplier so that a thickness reduction rate of the deposited hydrogenated amorphous carbon has a maximum value.

6. In the deposition removal step, excited oxygen atoms (O ＊ 6. The method of claim 5, wherein the hydrogenated amorphous carbon is introduced into the vacuum pump and reacts with the hydrogenated amorphous carbon deposited on the vacuum pump to oxidize the hydrogenated amorphous carbon.

Images