Blank mask manufacturing apparatus and method for manufacturing blank mask

Abstract

To provide an apparatus for fabricating a blank mask that can provide a photomask having low defect occurrence, an improved number of uses, and high precision, and a method of fabricating the blank mask.SOLUTION: An apparatus for fabricating a blank mask comprises: a chamber to accommodate an optical substrate; and a chuck rotatably disposed inside the chamber. The chuck comprises: a support part disposed under the optical substrate and configured to support the optical substrate; and a guide part disposed on a side surface of the optical substrate and connected to the support part. An interval between the guide part and the side surface of the optical substrate is greater than 0 mm and less than 1 mm.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The embodiments relate to a blank mask manufacturing apparatus and a blank mask manufacturing method. [Background technology]

[0002] The increasing integration of semiconductor devices and other devices requires finer circuit patterns, which places even more emphasis on the importance of lithography, a technology for developing circuit patterns on the wafer surface using a photomask.

[0003] In order to develop fine circuit patterns, the exposure light source used in the exposure process must have a shorter wavelength. In recent years, the exposure light source used is the ArF excimer laser (wavelength 193 nm).

[0004] Meanwhile, photomasks include binary masks and phase shift masks.

[0005] A binary mask has a configuration in which a light-shielding layer pattern is formed on a light-transmitting substrate. In the binary mask, on the surface on which the pattern is formed, the transparent portion not including the light-shielding layer transmits the exposure light, and the light-shielding portion including the light-shielding layer blocks the exposure light, thereby exposing the pattern on the resist film on the wafer surface. However, as the pattern of the binary mask becomes finer, problems may occur in the phenomenon of fine patterns due to the diffraction of light occurring at the edge of the transparent portion during the exposure process.

[0006] Phase shift masks include Levenson type, outrigger type, and half-tone type. Among them, the half-tone type phase shift mask has a structure in which a pattern formed of a semi-transmitting film is formed on a light-transmitting substrate 20. In the half-tone type phase shift mask, on the surface on which the pattern is formed, the transmissive portion not including the semi-transmitting layer transmits the exposure light, and the semi-transmitting portion including the semi-transmitting layer transmits the attenuated exposure light. The attenuated exposure light has a phase difference compared to the exposure light that has passed through the transmissive portion. As a result, the diffracted light generated at the edge of the transmissive portion is offset by the exposure light that has passed through the semi-transmitting portion, and the phase shift mask can form a more elaborate fine pattern on the wafer surface.

[0007] The prior art documents on this subject are as follows: (Patent Document 0001) Korean Patent Publication No. 10-2012-0057488 (Patent Document 0002) Korean Patent Publication No. 10-2014-0130420 Summary of the Invention [Problem to be solved by the invention]

[0008] The embodiments are intended to provide an apparatus for manufacturing a blank mask and a method for manufacturing a blank mask, which can provide a photomask having fewer defects, improved number of uses, and high precision. [Means for solving the problem]

[0009] A blank mask manufacturing apparatus according to an embodiment includes a chamber for accommodating an optical substrate, and a chuck arranged in the chamber so as to be rotatable, the chuck including a support portion arranged below the optical substrate and supporting the optical substrate, and a guide portion arranged on a side of the optical substrate and connected to the support portion, and a distance between the guide portion and the side of the optical substrate is greater than 0 and less than 1 mm.

[0010] In one embodiment, the blank mask manufacturing apparatus may include a by-product removal section disposed in a space between a side of the optical substrate and the guide section, for removing process by-products that flow into the space between the side of the optical substrate and the guide section.

[0011] In an embodiment, the blank mask manufacturing apparatus further includes a vacuum unit that applies a vacuum pressure to the by-product removal unit, and the by-product removal unit may suck in the process by-products.

[0012] In the blank mask manufacturing apparatus according to an embodiment, the by-product removal unit may include a hole for sucking the process by-product, and the hole may be connected to the vacuum unit.

[0013] In the blank mask manufacturing apparatus according to one embodiment, the holes may have a diameter of about 0.5 mm to about 2 mm, and the interval between the holes may be about 10 mm to about 100 mm.

[0014] In the blank mask manufacturing apparatus according to one embodiment, a height difference between an upper surface of the guide portion and an upper surface of the optical substrate may be less than 1 mm.

[0015] In an embodiment of the blank mask manufacturing apparatus, the by-product removal unit may be disposed in a corner area where a side surface of the optical substrate intersects with a lower surface of the optical substrate.

[0016] In the blank mask manufacturing apparatus according to an embodiment, the by-product removal unit may discharge the process by-products downward or downward to the side.

[0017] A method for manufacturing a blank mask according to an embodiment may include the steps of: forming a light-shielding film on an optical substrate; mounting the optical substrate on which the light-shielding film is formed on a chuck; forming a photoresist layer on the light-shielding film; and removing process by-products generated during the process of forming the photoresist layer from a space between a side of the optical substrate and the chuck.

[0018] In one embodiment of the method for manufacturing a blank mask, the step of forming the photoresist layer includes the steps of dropping a photoresist composition onto the light-shielding film and rotating the optical substrate, and the step of rotating the optical substrate can be performed simultaneously with the step of removing the process by-products.

[0019] In one embodiment of a method for manufacturing a blank mask, the chuck includes a support portion arranged under the optical substrate; a guide portion connected to the support portion and arranged on a side of the optical substrate; and a by-product removal portion arranged corresponding to a corner region where the lower surface of the optical substrate and the side of the optical substrate intersect, and the process by-products can be discharged by vacuum pressure through the by-product removal portion.

[0020] In the method for manufacturing a blank mask according to an embodiment, the process by-product may be fine particles derived from the photoresist resin composition.

[0021] In the method for manufacturing a blank mask according to an embodiment, the fine particles may have a particle size of about 1 μm to about 10 μm.

[0022] In the method for manufacturing a blank mask according to an embodiment, the optical substrate may rotate at a speed of about 500 rpm to about 7000 rpm, and the exhaust speed of the by-product removal unit may be about 1 ml / s to about 100 ml / s.

[0023] In the manufacturing method of the blank mask according to one embodiment, the distance between the guide portion and the side surface of the optical substrate may be greater than 0 mm and less than 1 mm.

[0024] In the blank mask manufacturing method according to an embodiment, the by-product removal portion may include a hole penetrating the chuck.

[0025] In the method for manufacturing a blank mask according to an embodiment, the holes may have a diameter of about 0.5 mm to about 2 mm, and the interval between the holes may be about 10 mm to 100 mm.

[0026] In the method for manufacturing a blank mask according to an embodiment, the vacuum pressure may be applied by a vacuum unit connected to the hole, and the vacuum unit may exhaust process by-products that flow in through the hole.

[0027] In one embodiment of the method for manufacturing a blank mask, the upper surface of the optical substrate may be higher than the upper surface of the guide portion, and the height difference between the upper surface of the guide portion and the upper surface of the optical substrate may be about 0.1 mm to about 0.5 mm. Effect of the Invention

[0028] The blank mask manufacturing apparatus according to the embodiment can appropriately adjust the distance between the guide portion and the optical substrate. In particular, in the blank mask manufacturing apparatus according to the embodiment, the distance between the guide portion and the optical substrate may be more than 0 mm and less than 1 mm.

[0029] As a result, the blank mask manufacturing apparatus according to the embodiment can suppress the inflow of process by-products between the guide portion and the optical substrate, and thus can prevent contamination of the side surface and the bottom surface of the optical substrate.

[0030] In addition, the blank mask manufacturing apparatus according to the embodiment may include a by-product removal unit disposed under a space between the guide unit and a side surface of the optical substrate, the by-product removal unit being capable of removing process by-products that flow into the space between the guide unit and a side surface of the optical substrate.

[0031] In particular, the by-product removal unit may suck in the process by-products by vacuum pressure, thereby allowing the by-product removal unit to easily remove fine particle-like by-products that flow between the guide unit and the side surface of the optical substrate.

[0032] In particular, since the by-product removal unit is disposed in correspondence with a corner portion where the side surface and the bottom surface of the optical substrate intersect, the process by-products can be efficiently removed.

[0033] As a result, the blank mask manufacturing apparatus according to the embodiment can minimize contamination of the process by-products. In particular, the blank mask according to the embodiment can prevent the process by-products from contaminating the side and bottom surfaces of the optical substrate. [Brief description of the drawings]

[0034] [Figure 1] FIG. 2 is a schematic diagram showing a blank mask manufacturing apparatus according to an embodiment. [Diagram 2] FIG. 1 is a perspective view showing a chuck according to an embodiment. [Diagram 3] FIG. 2 illustrates a top view of a chuck according to one embodiment. [Figure 4] FIG. 2 is a cross-sectional view showing one section of the chuck. [Diagram 5] 5 is an enlarged cross-sectional view of part A in FIG. 4. [Figure 6] FIG. 2 illustrates a process for removing process by-products in one embodiment. [Figure 7] 2 is a cross-sectional view showing a cross section of an optical substrate according to an embodiment. [Figure 8] 11 is a cross-sectional view showing a cross section of an optical substrate according to another embodiment. [Figure 9] 11 is a cross-sectional view showing a cross section of an optical substrate according to still another embodiment. [Figure 10] 1 is a cross-sectional view showing one cross section of a blank mask according to an embodiment. [Figure 11] 1 is a cross-sectional view showing one cross section of a photomask according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0035] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings, in which: FIG. 1 is a block diagram of a method for manufacturing a semiconductor device according to an embodiment of the present invention;

[0036] As used herein, terms of degree such as "about," "substantially," and the like, when given the tolerances of manufacturing and materials inherent in the referred meaning, are used to mean a numerical value or close to that numerical value, and are used to prevent unconscionable infringers from unfairly exploiting the contents of the disclosure in which precise or absolute numerical values ​​are referred to for the understanding of the embodiments.

[0037] Throughout this specification, the term "combinations thereof" contained in a Markush form phrase means a mixture or combination of one or more selected from the group of components set forth in the Markush form phrase, including one or more selected from the group of components set forth above.

[0038] Throughout this specification, the phrase "A and / or B" means "A, B, or A and B."

[0039] Throughout this specification, terms such as "first", "second" or "A", "B" are used to distinguish identical terms from one another, unless otherwise specified.

[0040] In this specification, the term "B is located on A" means that B is located on A, or B is located on A with another layer therebetween, or B may be located thereon, and is not to be interpreted as being limited to B being located in contact with the surface of A.

[0041] In this specification, the singular expression is to be construed as including the singular or plural as the context requires, unless otherwise specified.

[0042] FIG. 1 is a schematic diagram showing an apparatus for manufacturing a blank mask according to an embodiment. FIG. 2 is a perspective view showing a chuck according to an embodiment. FIG. 3 is a view showing a top surface of a chuck according to an embodiment. FIG. 4 is a cross-sectional view showing one cross section of the chuck. FIG. 5 is a cross-sectional view showing an enlarged view of part A in FIG. 4. FIG. 6 is a view showing a process of removing process by-products in one embodiment. FIG. 7 is a cross-sectional view showing one cross section of an optical substrate according to an embodiment. FIG. 8 is a cross-sectional view showing one cross section of an optical substrate according to another embodiment. FIG. 9 is a cross-sectional view showing one cross section of an optical substrate according to yet another embodiment. FIG. 10 is a cross-sectional view showing one cross section of a blank mask according to an embodiment. FIG. 11 is a cross-sectional view showing one cross section of a photomask according to an embodiment.

[0043] Referring to FIG. 1, the manufacturing apparatus for a blank mask according to the embodiment includes a chamber 100, a chuck 200, a vacuum section 300, an exhaust section 400, and a supply section 500 for a photoresist resin composition.

[0044] The chamber 100 accommodates the chuck 200. The chamber 100 can accommodate an optical substrate 10 for manufacturing a blank mask. The chamber 100 can be isolated from the outside. The inside of the chamber 100 can be sealed. The internal pressure of the chamber 100 can be a vacuum lower than atmospheric pressure.

[0045] The chamber 100 may include a door or a lid that can be opened and closed. The chamber 100 may be equipped with a heater or the like that can adjust the internal temperature of the chamber 100.

[0046] 2 to 6, the chuck 200 includes a support portion 210, a guide portion 220, and a by-product removal portion 230. The support portion 210 is a support member.

[0047] The support portion 210 may support the guide portion 220 and the by-product removal portion 230. The support portion 210 supports the optical substrate 10. The support portion 210 may be disposed below the optical substrate 10.

[0048] The supporting part 210 can temporarily fix the optical substrate 10. The supporting part 210 can temporarily fix the optical substrate 10 by vacuum pressure or electrostatic force.

[0049] The guide part 220 may be connected to the support part 210. The guide part 220 may be integrally formed with the support part 210. The guide part 220 may be disposed on a side surface 12 of the optical substrate 10. The guide part 220 may surround the side surface 12 of the optical substrate 10.

[0050] The support part 210 and the guide part 220 may form a receiving part 240 for receiving the optical substrate 10. That is, the support part 210 may be disposed on the lower surface 13 of the optical substrate 10, and the guide part 220 may be disposed on the side surface 12 of the optical substrate 10 to form the receiving part 240.

[0051] The receiving portion 240 may correspond to a planar shape of the optical substrate 10. The planar shape of the receiving portion 240 may be substantially similar to the planar shape of the optical substrate 10. The planar shape of the optical substrate 10 may be a square, and the planar shape of the receiving portion 240 may also be a square.

[0052] The outer periphery of the guide portion 220 may have a circular shape. The guide portion 220 and the support portion 210 may have a circular shape.

[0053] The by-product removal portion 230 may be formed in the support portion 210. The by-product removal portion 230 may be formed in the guide portion 220. The by-product removal portion 230 may be formed at a portion where the support portion 210 and the guide portion 220 intersect. The by-product removal portion 230 may be formed across the support portion 210 and the guide portion 220.

[0054] The by-product removing portion 230 may be formed in a region corresponding to an edge portion of the optical substrate 10. The by-product removing portion 230 may be formed along an edge portion of the support portion 210.

[0055] The by-product removal unit 230 may include a number of holes capable of injecting or sucking gas. The holes may extend downward or downward to the side. The diameter of the holes may be about 0.5 mm to about 2 mm. The distance between the holes may be about 10 mm to 100 mm.

[0056] The hole may extend through the chuck 200. The hole may extend through the support 210.

[0057] The by-product removal portion 230 may be disposed under a space 250 between the guide portion 220 and the side surface 12 of the optical substrate 10. The by-product removal portion 230 may be disposed in correspondence with a region 250 between an inner surface of the guide portion 220 and the side surface 12 of the optical substrate 10.

[0058] The guide portion 220 and the side surface 12 of the optical substrate 10 may be spaced apart at a constant interval. The distance (D) between the inner surface of the guide portion 220 and the side surface 12 of the optical substrate 10 may be about 0.01 mm to about 1 mm. The distance (D) between the guide portion 220 and the side surface 12 of the optical substrate 10 may be less than about 1 mm. The distance (D) between the guide portion 220 and the side surface 12 of the optical substrate 10 may be more than about 0.01 mm and less than about 0.5 mm. The distance (D) between the guide portion 220 and the side surface 12 of the optical substrate 10 may be more than about 0.01 mm and less than about 0.2 mm. The distance (D) between the guide portion 220 and the side surface 12 of the optical substrate 10 may be more than about 0.01 mm and less than about 0.15 mm.

[0059] Since the guide part 220 and the side surface 12 of the optical substrate 10 have the above-mentioned distance (D), it is possible to suppress the inflow of the process by-products 511 into the space 250 between the guide part 220 and the optical substrate 10. In particular, since the guide part 220 and the side surface 12 of the optical substrate 10 have the above-mentioned distance (D), the blank mask manufacturing apparatus according to the embodiment can prevent the photoresist composition from seeping into the space between the guide part 220 and the optical substrate 10 or from rebounding and contaminating the space.

[0060] In addition, since the guide part 220 and the side surface 12 of the optical substrate 10 have the above-mentioned distance (D), the optical substrate 10 can be easily seated on the support part 220. Since the guide part 220 and the side surface 12 of the optical substrate 10 have the above-mentioned distance (D), scratches, etc., can be prevented when the optical substrate 10 is attached to or detached from the support part 220. In particular, since the guide part 220 and the optical substrate 10 are appropriately spaced apart, scratches or cracks that may occur when the optical substrate 10 is attached to or detached from the support part 220 can be prevented.

[0061] In addition, since the holes have the above-mentioned diameter and spacing, the by-product removal part 230 can easily remove the process by-products 511 that flow into the space between the guide part 220 and the optical substrate 10.

[0062] The upper surface 11 of the optical substrate 10 may be higher than the upper surface 221 of the guide part 220. That is, the upper surface 221 of the guide part 220 may be lower than the upper surface 11 of the optical substrate 10.

[0063] The height difference between the upper surface 221 of the guide portion 220 and the upper surface 11 of the optical substrate 10 may be less than about 1 mm. The height difference between the upper surface 221 of the guide portion 220 and the upper surface 11 of the optical substrate 10 may be about 0.1 mm to about 0.5 mm. The height difference between the upper surface 221 of the guide portion 220 and the upper surface 11 of the optical substrate 10 may be about 0.1 mm to about 25 mm. The height difference between the upper surface 221 of the guide portion 220 and the upper surface 11 of the optical substrate 10 may be about 0.1 mm to about 0.2 mm.

[0064] When the height difference between the upper surface 221 of the guide portion 220 and the upper surface 11 of the optical substrate 10 is as described above, the process by-product 511 can be easily discharged when a photoresist resin composition is spin-coated onto the optical substrate 10.

[0065] The by-product removing unit 230 may be connected to the vacuum unit 300. The by-product removing unit 230 may be connected to the vacuum unit 300 through a flow path 260. The by-product removing unit 230 may suck the process by-products 511 by applying the vacuum pressure generated by the vacuum unit 300 through the flow path 260. That is, the process by-products 511 may be removed by the vacuum unit 300 through the by-product removing unit 230 and the flow path 260.

[0066] The process by-product 511 may include fine particles. The fine particles may be formed by scattering of the photoresist resin composition. The fine particles may have a particle size of less than about 10 μm. The fine particles may have a particle size of about 1 μm to about 10 μm.

[0067] The exhaust speed of the by-product removal unit 230 may be about 1 ml / s to about 100 ml / s, so that the by-product removal unit 230 can easily remove the process by-products 511 contained in the space between the guide unit 220 and the optical substrate 10.

[0068] The vacuum unit 300 may be connected to the by-product removing unit 230. The vacuum unit 300 may be connected to the hole. The vacuum unit 300 may be connected to the by-product removing unit 230 via the flow path 260. The vacuum unit 300 may apply a vacuum pressure to the by-product removing unit 230. The vacuum unit 300 may suck in and filter the process by-products 511. The vacuum unit 300 may exhaust the process by-products 511.

[0069] The exhaust unit 400 can exhaust the gas inside the chamber 100. In addition, the exhaust unit 400 can exhaust the photoresist composition remaining after being coated on the optical substrate 10. The exhaust unit 400 can exhaust the photoresist resin composition scattered to the side of the chuck 200.

[0070] Also, the blank mask manufacturing apparatus according to the embodiment may further include a suction nozzle (not shown). The suction nozzle may extend from the exhaust unit 400 and be disposed on one side of the chuck 200. The suction nozzle may suck in the photoresist composition scattered laterally from the chuck 200.

[0071] The photoresist resin composition supply unit 500 may supply the photoresist resin composition 510 to the upper surface of the optical substrate 10. The photoresist resin composition 510 may include a spray nozzle disposed in the chamber 100. The photoresist resin composition 510 may be dropped onto the optical substrate 10 through the spray nozzle. That is, the photoresist resin composition supply unit 500 may spray the photoresist resin composition 510 onto the upper surface of the optical substrate 10.

[0072] The spindle motor 600 may be connected to the chuck 200. The spindle motor 600 may rotate the chuck 200 at high speed. The chuck 200 may be rotated by the spindle motor 600 at a speed of about 500 rpm to about 7000 rpm.

[0073] As the chuck 200 rotates, centrifugal force may be applied to the dropped photoresist resin composition, so that a photoresist resin composition layer may be formed on the optical substrate 10 with a uniform thickness.

[0074] The by-product removal unit 230 may suck the process by-products 511 by vacuum pressure. Thus, the by-product removal unit 230 may easily remove the fine particle-like process by-products 511 that flow between the guide unit 220 and the side surface 12 of the optical substrate 10.

[0075] In particular, the by-product removing unit 230 is disposed in correspondence with the corner portion where the side surface 12 and the lower surface 13 of the optical substrate 10 intersect, so that the process by-products 511 can be removed efficiently.

[0076] As a result, the blank mask manufacturing apparatus according to the embodiment can minimize contamination of the process by-products 511. In particular, the blank mask according to the embodiment can prevent the process by-products 511 from contaminating the side surface 12 and the bottom surface 13 of the optical substrate 10.

[0077] The blank mask according to the embodiment can be manufactured by the following manufacturing process.

[0078] First, an optical substrate 10 can be provided. The optical substrate 10 includes a light-transmitting substrate 20 and a light-shielding film 30 disposed on the light-transmitting substrate 20.

[0079] The light-transmitting substrate 20 may have light transmittance to the exposure light. The light-transmitting substrate 20 may have a transmittance of more than about 85% to the exposure light having a wavelength of about 193 nm. The transmittance of the light-transmitting substrate 20 may be more than about 87%. The transmittance of the light-transmitting substrate 10 may be less than 99.99%. The light-transmitting substrate 20 may include a synthetic quartz substrate. In such a case, the light-transmitting substrate 20 can suppress attenuation of the transmitted light.

[0080] The light-transmitting substrate 20 has surface characteristics such as appropriate flatness and illuminance, and thus can suppress distortion of the transmitted light.

[0081] The light-shielding film 30 may be disposed on the top side of the light-transmitting substrate 20 .

[0082] The light-shielding film 30 can at least selectively block exposure light incident on the bottom side of the light-transmitting substrate 20 .

[0083] Furthermore, as shown in FIG. 7, when a phase shift film 40 or the like is disposed between the light-transmitting substrate 20 and the light-shielding film 30, the light-shielding film 30 can be used as an etching mask in a process of etching the phase shift film 40 or the like according to a pattern shape.

[0084] The light-shielding film 30 may contain a transition metal and at least one of oxygen and nitrogen.

[0085] The light-shielding film 30 may include chromium, oxygen, nitrogen, and carbon. The elemental contents of the entire light-shielding film 30 may vary in the thickness direction. When the light-shielding film 30 is a multi-layered film, the elemental contents of the entire light-shielding film 30 may vary from layer to layer.

[0086] The light-shielding film 30 may contain chromium at a content of about 44 atom % to about 60 atom %.The light-shielding film 30 may contain chromium at a content of about 47 atom % to about 57 atom %.

[0087] The light-shielding film 30 may contain carbon at a content of about 5 atom % to about 30 atom %.The light-shielding film 30 may contain carbon at a content of about 7 atom % to about 25 atom %.

[0088] The light-shielding film 30 may contain nitrogen at a content of about 3 atom % to about 20 atom %.The light-shielding film 30 may contain nitrogen at a content of about 5 atom % to about 15 atom %.

[0089] The light-shielding film 30 may contain oxygen at a content of about 20 atom % to about 45 atom %.The light-shielding film 30 may contain oxygen at a content of about 25 atom % to about 40 atom %.

[0090] In this case, the light-shielding film 30 can have sufficient light-extinguishing properties.

[0091] As shown in FIG. 8, the light-shielding film 30 may include a first light-shielding layer 301 and a second light-shielding layer 302, each of which contains at least one of a transition metal, oxygen, and nitrogen.

[0092] The second light-shielding layer 302 may include a transition metal at a content of about 50 at % to about 80 at %. The second light-shielding layer 302 may include a transition metal at a content of about 55 at % to about 75 at %. The second light-shielding layer 302 may include a transition metal at a content of about 60 at % to about 70 at %. In the second light-shielding layer 302, a sum of an oxygen content and a nitrogen content may be about 10 at % to about 30 at %. In the second light-shielding layer 302, a sum of an oxygen content and a nitrogen content may be about 15 at % to about 25 at %. The second light-shielding layer 302 may include a nitrogen content of about 5 at % to about 15 at %. The second light-shielding layer 22 may include a nitrogen content of about 7 at % to about 13 at %.

[0093] The first light-shielding layer 301 may include a transition metal at a content of about 30 at % to about 60 at %. The first light-shielding layer 301 may include a transition metal at a content of about 35 at % to about 55 at %. The first light-shielding layer 301 may include a transition metal at a content of about 40 at % to about 50 at %. In the first light-shielding layer 301, a sum of an oxygen content and a nitrogen content may be about 40 at % to about 70 at %. In the first light-shielding layer 301, a sum of an oxygen content and a nitrogen content may be about 45 at % to about 65 at %. In the first light-shielding layer 301, a sum of an oxygen content and a nitrogen content may be about 50 at % to about 60 at %. The first light-shielding layer 301 may include an oxygen content of about 20 at % to about 37 at %. The first light-shielding layer 301 may contain oxygen at a content of about 23 at % to about 33 at %. The first light-shielding layer 301 may contain oxygen at a content of about 25 at % to about 30 at %. The first light-shielding layer 301 may contain nitrogen at a content of about 20 at % to about 35 at %. The first light-shielding layer 301 may contain nitrogen at a content of about 26 at % to about 33 at %. The first light-shielding layer 301 may contain nitrogen at a content of about 26 at % to about 30 at %.

[0094] The transition metal may include at least one of Cr, Ta, Ti, and Hf. The transition metal may be Cr.

[0095] In this case, the first light-shielding layer 31 can help the light-shielding film 30 to have excellent extinction properties.

[0096] The first light-shielding layer 31 may have a thickness of about 250 Å to about 650 Å. The first light-shielding layer 31 may have a thickness of about 350 Å to about 600 Å. The first light-shielding layer 31 may have a thickness of about 400 Å to about 550 Å. In this case, the first light-shielding layer 31 may help the light-shielding film 30 to effectively block exposure light.

[0097] The second light-shielding layer 32 may have a thickness of about 30 Å to about 200 Å. The second light-shielding layer 32 may have a thickness of about 30 Å to about 100 Å. The second light-shielding layer 32 may have a thickness of about 40 Å to about 80 Å. In this case, the second light-shielding layer 32 improves the extinction characteristic of the light-shielding film 30, and helps to more precisely control the surface profile of the side of the light-shielding pattern film 35 formed when the light-shielding film 30 is patterned.

[0098] A ratio of a thickness of the second light-shielding layer 32 to a thickness of the first light-shielding layer 31 may be about 0.05 to about 0.3. A ratio of a thickness of the second light-shielding layer 32 to a thickness of the first light-shielding layer 31 may be about 0.07 to about 0.25. A ratio of a thickness of the second light-shielding layer 32 to a thickness of the first light-shielding layer 31 may be about 0.1 to about 0.2.

[0099] In this case, the light-shielding film 30 has sufficient extinction properties, and the surface profile of the side surface of the light-shielding pattern film 35 formed during patterning of the light-shielding film 30 can be controlled more precisely.

[0100] The content of the transition metal in the second light-shielding layer 32 may be greater than the content of the transition metal in the first light-shielding layer 31 .

[0101] In order to more precisely control the surface profile of the side of the light-shielding pattern film 35 formed by patterning the light-shielding film 30 so that the surface reflectance of the light-shielding film 30 to the inspection light in defect inspection has a value suitable for inspection, the second light-shielding layer 32 may be required to have a larger transition metal content than the first light-shielding layer 31.

[0102] However, in this case, recovery, recrystallization, and grain growth may occur in the transition metal contained in the second light-shielding layer 32 during heat treatment of the formed light-shielding film 30. If grain growth occurs in the second light-shielding layer 32 containing a high content of transition metal, the illuminance characteristics of the surface of the light-shielding film 30 may fluctuate excessively due to excessively grown transition metal particles. This may cause an increase in the number of false defects detected when the surface of the light-shielding film 30 is inspected for defects with high sensitivity.

[0103] The light-shielding film 30 may have a transmittance of about 1% to about 2% for light with a wavelength of 193 nm. The light-shielding film 30 may have a transmittance of about 1.3% to about 2% for light with a wavelength of 193 nm. The light-shielding film 30 may have a transmittance of about 1.4% to about 2% for light with a wavelength of 193 nm.

[0104] The light-shielding film 30 may have an optical density of about 1.8 to about 3. The light-shielding film 30 may have an optical density of about 1.9 to about 3.

[0105] In this case, the thin film including the light-shielding film 30 can effectively suppress the transmission of the exposure light.

[0106] As shown in FIG. 9, the optical substrate 10 may further include a phase shift film 40 .

[0107] The phase shift film 40 may be disposed between the light-transmitting substrate 20 and the light-shielding film 30. The phase shift film 40 may be a thin film that attenuates the light intensity of the transmitting exposure light, adjusts the phase difference, and substantially suppresses diffracted light generated at the edge of a pattern.

[0108] The phase shift film 40 may have a phase difference of about 170° to about 190° with respect to light having a wavelength of 193 nm.The phase shift film 40 may have a phase difference of about 175° to about 185° with respect to light having a wavelength of 193 nm.

[0109] The phase shift film 40 may have a transmittance of about 3% to about 10% for light having a wavelength of 193 nm. The phase shift film 40 may have a transmittance of about 4% to about 8% for light having a wavelength of 193 nm. In such a case, the resolution of the photomask 200 including the phase shift film 40 may be improved.

[0110] The phase shift film 40 may contain a transition metal and silicon.The phase shift film 40 may contain a transition metal, silicon, oxygen and nitrogen.The transition metal may be molybdenum.

[0111] A hard mask (not shown) may be positioned on the light-shielding film 30. The hard mask may function as an etching mask film when etching the pattern of the light-shielding film 30. The hard mask may contain silicon, nitrogen, and oxygen.

[0112] The method for manufacturing the optical substrate 10 includes forming the light-shielding film 30 on the light-transmitting film. The light-shielding film 30 may be formed by a sputtering process.

[0113] After the sputtering process, a heat treatment process may be performed.

[0114] The heat treatment step can be performed at a temperature of about 200°C to about 400°C.

[0115] The heat treatment step may be performed for about 5 minutes to about 30 minutes.

[0116] The method for manufacturing the optical substrate 10 may further include a step of cooling the light-shielding film 30 that has been subjected to the heat treatment process.

[0117] The sputtering target can be selected in consideration of the composition of the light-shielding film 30 to be formed. The sputtering target can be one target containing a transition metal. The sputtering target can be two or more targets including one target containing a transition metal. The target containing a transition metal may contain 90 atom% or more of the transition metal. The target containing a transition metal may contain 95 atom% or more of the transition metal. The target containing a transition metal may contain 99 atom% of the transition metal.

[0118] The transition metal may include at least one of Cr, Ta, Ti, and Hf. The transition metal may include Cr.

[0119] The atmospheric gas may include an inert gas, a reactive gas, and a sputtering gas. The inert gas is a gas that does not contain elements that constitute the deposited thin film. The reactive gas is a gas that contains elements that constitute the deposited thin film.

[0120] The sputtering gas is a gas that is ionized in a plasma atmosphere and collides with a target. The inert gas may include helium.

[0121] The reactive gas may include a gas containing a nitrogen element. The gas containing a nitrogen element may be, for example, N2, NO, NO2, N2O, N2O3, N2O4, or N2O5. The reactive gas may include a gas containing an oxygen element.

[0122] The gas containing oxygen may be O2, for example. The reactive gas may include a gas containing nitrogen and a gas containing oxygen. The reactive gas may include a gas containing both nitrogen and oxygen. The gas containing both nitrogen and oxygen may be NO, NO2, N2O, N2O3, N2O4, or N2O5, for example.

[0123] The reactive gas containing carbon and oxygen may also be CO2.

[0124] The sputtering gas may be Ar gas.

[0125] The power source for applying power to the sputtering target may be a DC power source or an RF power source.

[0126] Thereafter, the cooled light-shielding film 30 can be washed. The washing step may include an ultraviolet irradiation step and / or a rinsing step.

[0127] The ultraviolet ray irradiation process may include a step of irradiating the light-shielding film 30 with ultraviolet rays.

[0128] The rinsing process includes a step of treating the light-shielding film 30 with a cleaning solution. The cleaning solution may include at least one of deionized water, hydrogen water, ozone water, and carbonated water. The cleaning solution may include the carbonated water.

[0129] The optical substrate 10 may be disposed in the chamber 100. The optical substrate 10 may be temporarily fixed to the chuck 200. The optical substrate 10 may be disposed in the receiving portion. The optical substrate 10 may be seated on the chuck 200.

[0130] The method for manufacturing a blank mask according to the embodiment includes forming a photoresist layer 50 on the optical substrate 10 .

[0131] In order to form the photoresist layer 50, the inside of the chamber 100 is isolated from the outside by a lid of the chamber 100. Then, while the chuck 200 is rotating at high speed, the photoresist resin composition is dropped and coated on the upper surface of the optical substrate 10 by the photoresist resin composition supply unit 500. As a result, a photoresist resin composition layer may be formed on the optical substrate 10.

[0132] The method for manufacturing a blank mask according to the embodiment includes the step of discharging process by-products 511 generated during the formation of the photoresist layer 50 from a space between the side surface 12 of the optical substrate 10 and the chuck 200 by using a vacuum pressure.

[0133] When the photoresist resin composition is coated on the optical substrate 10, the vacuum unit 300 may apply a vacuum pressure to the by-product removing unit 230. Thus, the process by-products 511 may be removed from the space 250 between the side surface 12 of the optical substrate 10 and the chuck 200. That is, the process by-products 511 may be sucked into the by-product removing unit 230 from the space 250 between the side surface 12 of the optical substrate 10 and the guide unit 220.

[0134] The step of removing the process by-products 511 and the step of rotating the optical substrate 10 at high speed by the chuck 200 can be performed simultaneously. That is, the step of forming the photoresist layer 50 and the step of discharging the process by-products 511 can be performed simultaneously.

[0135] The photoresist resin composition may contain a binder resin, a photosensitizer, and an organic solvent.

[0136] Examples of the binder resin include novolac resin, phenolic resin, epoxy resin, polyimide resin, etc. Examples of the binder resin include polyvinyl pyrolidone, poly(acrylamide-co-diacetoneacrylamide), etc.

[0137] Examples of the photosensitizer include at least one selected from the group consisting of 4,4'-diazido-2,2'-stilbenedisulfonic acid sodium salt, 4,4'-diazo-2,2'-dibenzalacetonedisulfonic acid disodium salt, 2,5-bis(4-azido-2-sulfobenzylidene)cyclopentanone disodium salt, and 4,4'-diazido-2,2'-stilbenedisulfonic acid sodium salt (4,4'-diazido-2,2'-dicinnamylideneacetone sulfonate salt, DACA).

[0138] The solvent may be ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, methyl methoxypropionate, ethyl ethoxypropionate (EEP), ethyl lactate, propylene glycol methyl ether acetate (PGMEA), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexane At least one may be selected from the group consisting of Sanon, dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), γ-butyrolactone, diethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran (THF), methanol, ethanol, propanol, isopropanol, methyl cellosolve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, heptane, and octane.

[0139] The photoresist resin composition may include the binder resin in an amount of about 3 wt % to about 50 wt %, the photosensitizer in an amount of about 2 wt % to about 40 wt %, and the solvent in an amount of about 10 wt % to about 94 wt %.

[0140] The photoresist resin composition may further include additives such as a leveling agent or an adhesion promoter.

[0141] As a result, the photoresist resin composition layer formed on the optical substrate 10 is dried and the solvent is removed. As a result, the photoresist layer 50 may be formed on the optical substrate 10, as shown in Fig. 10. As a result, a blank mask including the optical substrate 10 and the photoresist layer 50 can be manufactured.

[0142] The photoresist layer 50 may be selectively irradiated with light, and the light-shielding film may be selectively etched to form a light-shielding pattern film 35. As a result, a photomask 2 including the light-transmitting substrate 20 and the light-shielding pattern film 35 disposed on the light-transmitting substrate 20 may be formed, as shown in FIG.

[0143] The light-shielding pattern film 35 contains a transition metal and at least one of oxygen and nitrogen.

[0144] The light-shielding pattern film 35 may be formed by patterning the light-shielding film 30 of the blank mask 100 described above.

[0145] Descriptions of the properties, composition, structure, etc. of the light-shielding pattern film 35 overlap with the description of the light-shielding film 30 of the blank mask 1, and therefore will be omitted.

[0146] The method for manufacturing a semiconductor device according to the embodiment includes a preparation step of arranging a light source, a photomask 2, and a semiconductor wafer coated with a resist film; an exposure step of selectively transmitting and emitting light incident from the light source through the photomask 2 onto the semiconductor wafer; and a development step of developing a pattern on the semiconductor wafer.

[0147] The photomask 2 includes a light-transmitting substrate 20 and a light-shielding pattern film 35 disposed on the light-transmitting substrate 20 .

[0148] The light-shielding pattern film 35 contains a transition metal and at least one of oxygen, nitrogen, and carbon.

[0149] In the preparation step, the light source is a device that generates short-wavelength exposure light. The exposure light may be light with a wavelength of 200 nm or less. The exposure light may be ArF light with a wavelength of 193 nm.

[0150] A lens may be further disposed between the photomask 2 and the semiconductor wafer. The lens serves to reduce the shape of the circuit pattern on the photomask 2 and transfer it onto the semiconductor wafer. The lens is not limited as long as it is generally applicable to the ArF semiconductor wafer exposure process. In an example, the lens may be a lens made of calcium fluoride (CaF2).

[0151] In the exposure step, the exposure light can be selectively transmitted onto the semiconductor wafer through the photomask 2. In such a case, chemical modification can occur in the portion of the resist film on which the exposure light is incident.

[0152] In the developing step, the semiconductor wafer after the exposure step may be treated with a developing solution to develop a pattern on the semiconductor wafer. If the applied resist film is a positive resist, a portion of the resist film on which the exposure light is incident may be dissolved by the developing solution. If the applied resist film is a negative resist, a portion of the resist film on which the exposure light is not incident may be dissolved by the developing solution. The resist film is formed into a resist pattern by the developing solution treatment. A pattern may be formed on the semiconductor wafer using the resist pattern as a mask.

[0153] The description of the photomask 2 is omitted here since it overlaps with the above description.

[0154] The blank mask manufacturing apparatus according to the embodiment includes a by-product removal unit 230 disposed under a space between the guide unit 220 and the side surface 12 of the optical substrate 10. The by-product removal unit 230 may remove process by-products 511 flowing into the space between the guide unit 220 and the side surface 12 of the optical substrate 10.

[0155] In particular, the by-product removal unit 230 may suck the process by-products 511 by vacuum pressure. Thus, the by-product removal unit 230 may easily remove fine particle-like by-products that flow between the guide unit 220 and the side surface 12 of the optical substrate 10.

[0156] In particular, the by-product removing unit 230 is disposed in correspondence with the corner portion where the side surface 12 and the lower surface 13 of the optical substrate 10 intersect, so that the process by-products 511 can be removed efficiently.

[0157] As a result, the blank mask manufacturing apparatus according to the embodiment can minimize contamination of the process by-products 511. In particular, the blank mask according to the embodiment can prevent the process by-products 511 from contaminating the side surface 12 and the bottom surface 13 of the optical substrate 10.

[0158] Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention, as defined in the following claims, also fall within the scope of the present invention. [Explanation of symbols]

[0159] 100 Chamber 200 Chuck 300 Vacuum section 400 Exhaust section 500 Photoresist resin composition supply section

Claims

1. a chamber for housing an optical substrate; a chuck rotatably disposed within the chamber; The chuck is A support disposed under the optical substrate and supporting the optical substrate; a guide portion disposed on a side surface of the optical substrate and connected to the support portion; The distance between the guide portion and the side surface of the optical substrate is greater than 0 and less than 1 mm; and a by-product removal unit disposed in a space between a side surface of the optical substrate and the guide unit, the by-product removal unit removing process by-products that flow into the space between the side surface of the optical substrate and the guide unit. Blank mask manufacturing equipment.

2. The by-product removing unit further includes a vacuum unit that applies a vacuum pressure to the by-product removing unit, The by-product removal unit sucks in the process by-products.

2. An apparatus for manufacturing a blank mask according to claim 1.

3. the by-product removal unit includes a hole for sucking the process by-products, The hole is connected to the vacuum.

3. An apparatus for manufacturing a blank mask according to claim 2.

4. The diameter of the holes is about 0.5 mm to about 2 mm, and the spacing between the holes is about 10 mm to 100 mm.

4. An apparatus for manufacturing a blank mask according to claim 3.

5. The height difference between the upper surface of the guide portion and the upper surface of the optical substrate is less than 1 mm; 2. An apparatus for manufacturing a blank mask according to claim 1.

6. The by-product removal portion is disposed in a corner area where a side surface of the optical substrate and a lower surface of the optical substrate intersect.

2. An apparatus for manufacturing a blank mask according to claim 1.

7. The by-product removal section discharges the process by-products downward or downward to the side.

2. An apparatus for manufacturing a blank mask according to claim 1.

8. forming a light-shielding film on an optical substrate; placing the optical substrate on which the light-shielding film is formed on a chuck; forming a photoresist layer on the light-shielding film; and removing process by-products generated during the formation of the photoresist layer from a space between a side surface of the optical substrate and the chuck; The chuck is a support disposed below the optical substrate and configured to support the optical substrate; and A method for manufacturing a blank mask, the method including a guide portion connected to the support portion and disposed on a side surface of the optical substrate.

9. The step of forming the photoresist layer comprises: Dropping a photoresist composition onto the light-shielding film; and rotating the optical substrate; The step of rotating the optical substrate is performed simultaneously with the step of removing the process by-products. The method for producing the blank mask according to claim 8 .

10. The chuck further comprises a by-product removal portion disposed in a corner area where a lower surface of the optical substrate and a side surface of the optical substrate intersect; The process by-products are removed by vacuum pressure through the by-product removal section. The method for producing the blank mask according to claim 9 .

11. The process by-products are fine particles derived from the photoresist composition. The method for producing the blank mask according to claim 10 .

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