Dicing and die bonding integrated film, die bonding film, and manufacturing method of semiconductor device

Abstract

This integrated dicing / die bonding film is provided with: dicing tape having a substrate and an adhesive layer provided on the substrate; and a die bonding film having a first surface and a second surface on the opposite side from the first surface, said die bonding film being arranged on the adhesive layer of the dicing tape so that the adhesive layer and the first surface are in contact. The die bonding film contains 75 mass% or more of conductive particles relative to the total amount of the die bonding film. The surface roughness of the first surface is 1.0 μm or less and the surface roughness of the second surface is 1.0 μm or less in the die bonding film.

Description

[Technical field]

[0001] The present disclosure relates to a dicing / die bonding integrated film, a die bonding film, and a method for manufacturing a semiconductor device. [Background technology]

[0002] Conventionally, semiconductor devices are manufactured through the following steps. First, a semiconductor wafer is attached to a dicing adhesive sheet, and in this state, the semiconductor wafer is divided into semiconductor chips (dicing step). Then, a pick-up step, a pressure bonding step, a die bonding step, etc. are performed. Patent Document 1 discloses an adhesive sheet (a dicing / die bonding integrated film) that has both the function of fixing a semiconductor wafer in the dicing step and the function of bonding a semiconductor chip to a substrate in the die bonding step. In the dicing step, the semiconductor wafer and the adhesive layer are divided into individual pieces to obtain chips with adhesive pieces attached.

[0003] In recent years, devices called power semiconductor devices that control electric power and the like have become widespread. Power semiconductor devices tend to generate heat due to the current supplied to them, and therefore require excellent heat dissipation. Patent Document 2 discloses a conductive film-like adhesive and a dicing tape with a film-like adhesive that have higher heat dissipation properties after curing than before curing. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2008-218571 A [Patent Document 2] Patent No. 6396189 Summary of the Invention [Problem to be solved by the invention]

[0005] In the process of developing a semiconductor device having excellent heat dissipation, the present inventors found that when conductive particles were blended in an amount (for example, 75% by mass or more based on the total amount of the die bonding film) that would provide sufficient heat dissipation in the adhesive layer of a dicing-die bonding integrated film having an adhesive layer and a pressure-sensitive adhesive layer made of a die bonding film, the adhesive layer and the pressure-sensitive adhesive layer were easily insufficient in adhesion. If the adhesion between the two is insufficient, a problem may occur in which the dicing-die bonding integrated film cannot be formed, and even if it is formed, a problem may occur in which the chip with the adhesive piece comes off from the pressure-sensitive adhesive layer during the dicing process (chip jump). Furthermore, the present inventors further studied and found that when the adhesive layer of the dicing-die bonding integrated film is attached to a semiconductor wafer, the adhesion between the adhesive layer and the semiconductor wafer is easily insufficient. If the adhesion between the two is insufficient, a problem may occur in which the dicing-die bonding integrated film comes off from the semiconductor wafer during the dicing process.

[0006] Therefore, one aspect of the present disclosure aims to provide a dicing-die bonding integrated film having an adhesive layer and a pressure-sensitive adhesive layer, which has excellent heat dissipation properties, excellent adhesion between the adhesive layer and the pressure-sensitive adhesive layer, and even when attached to a semiconductor wafer, has excellent adhesion between the adhesive layer and the semiconductor wafer. [Means for solving the problem]

[0007] One aspect of the present disclosure relates to a dicing / die bonding integrated film. The dicing / die bonding integrated film includes a dicing tape having a substrate and an adhesive layer provided on the substrate, and a die bonding film having a first surface and a second surface opposite to the first surface, the die bonding film being disposed on the adhesive layer of the dicing tape so that the adhesive layer and the first surface are in contact with each other. The die bonding film contains 75% by mass or more of conductive particles based on the total amount of the die bonding film. In the die bonding film, the surface roughness of the first surface is 1.0 μm or less, and the surface roughness of the second surface is 1.0 μm or less. Such a dicing / die bonding integrated film has excellent heat dissipation properties, excellent adhesion between the adhesive layer and the adhesive layer made of the die bonding film, and further, when attached to a semiconductor wafer, excellent adhesion between the adhesive layer and the semiconductor wafer made of the die bonding film.

[0008] The surface roughness of the first surface is preferably greater than that of the second surface, which tends to provide better adhesion between the die bonding film and the adhesive layer (dicing tape) during dicing and to suppress chip flying and the like.

[0009] The surface roughness of the first surface may be 0.25 μm or more. That is, the surface roughness of the first surface may be 0.25 to 1.0 μm. When the surface roughness of the first surface is 1.0 μm or less, it tends to be possible to prevent a decrease in adhesiveness due to the surface roughness. On the other hand, when the surface roughness of the first surface is 0.25 μm or more, it tends to be possible to prevent a decrease in the anchor effect due to the surface smoothness becoming too high. A dicing-die bonding integrated film having a die bonding film having a first surface with a surface roughness in such a range can further improve the adhesion between the adhesive layer and the adhesive layer made of the die bonding film.

[0010] The thermal conductivity of the die bonding film may be 1.6 W / m·K or more. When the thermal conductivity of the die bonding film is 1.6 W / m·K or more, the dicing-die bonding integrated film tends to have better heat dissipation properties.

[0011] The conductive particles may be spherical. The conductive particles may have an average particle size of 5.0 μm or less or 3.0 μm or less. By using such conductive particles, a die bonding film having a predetermined surface roughness tends to be obtained without performing a physical smoothing treatment.

[0012] The conductive particles may be conductive particles having a thermal conductivity (20°C) of 250 W / m K or more. By using such conductive particles, the dicing-die bonding integrated film has better heat dissipation properties.

[0013] The die bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The die bonding film containing these tends to have a surface roughness that can be easily adjusted to a predetermined range.

[0014] The thermosetting resin may contain an epoxy resin that is liquid at 25°C. When the thermosetting resin contains an epoxy resin that is liquid at 25°C, the content of the epoxy resin may be 2 mass% or more based on the total amount of the die bonding film. When the thermosetting resin contains an epoxy resin that is liquid at 25°C in a predetermined range, a die bonding film having a predetermined surface roughness tends to be easily obtained. In addition, even when a physical smoothing treatment is performed, it tends to be performed under milder conditions.

[0015] One aspect of the present disclosure provides a method for manufacturing a semiconductor device, comprising the steps of: attaching a second surface of the die bonding film of the dicing-die bonding integrated film to a semiconductor wafer; singulating the semiconductor wafer and the die bonding film; picking up a semiconductor chip to which the die bonding film piece is attached from a dicing tape; and adhering the semiconductor chip to a support substrate via the die bonding film piece. By using the dicing-die bonding integrated film, it is possible to manufacture a semiconductor device with excellent heat dissipation properties.

[0016] One aspect of the present disclosure relates to a die bonding film. The die bonding film has a first surface and a second surface opposite to the first surface, and contains 75 mass % or more of conductive particles based on the total amount of the die bonding film. In the die bonding film, the surface roughness of the first surface is 1.0 μm or less, and the surface roughness of the second surface is 1.0 μm or less. The surface roughness of the first surface is preferably larger than the surface roughness of the second surface. The surface roughness of the first surface may be 0.25 μm or more.

[0017] The thermal conductivity of the die bonding film may be 1.6 W / m·K or more.

[0018] The conductive particles may be spherical. Furthermore, the average particle size of the conductive particles may be 5.0 μm or less, or 3.0 μm or less. The conductive particles may be conductive particles having a thermal conductivity (20° C.) of 250 W / m·K or more.

[0019] The die bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The thermosetting resin may contain an epoxy resin that is liquid at 25° C. When the thermosetting resin contains an epoxy resin that is liquid at 25° C., the content of the epoxy resin may be 2 mass% or more based on the total amount of the die bonding film. Effect of the Invention

[0020] According to the present disclosure, there is provided a dicing-die bonding integrated film having an adhesive layer and a pressure-sensitive adhesive layer, which has excellent heat dissipation properties, excellent adhesion between the adhesive layer and the pressure-sensitive adhesive layer, and excellent adhesion between the adhesive layer and the semiconductor wafer even when attached to a semiconductor wafer. Also, according to the present disclosure, there is provided a method for manufacturing a semiconductor device using such a dicing-die bonding integrated film. Furthermore, according to the present disclosure, there is provided a die bonding film that is suitably used for such a dicing-die bonding integrated film. [Brief description of the drawings]

[0021] [Figure 1] FIG. 1 is a schematic cross-sectional view showing one embodiment of a die bonding film. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing one embodiment of a dicing / die bonding integrated film. [Diagram 3] 3A, 3B, 3C, 3D, 3E, and 3F are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device, in which (a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. [Figure 4] FIG. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] Hereinafter, the embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless specifically stated. The size of the components in each figure is conceptual, and the relative relationship of the size between the components is not limited to that shown in each figure.

[0023] The same applies to the numerical values ​​and their ranges in this specification, and they do not limit the present disclosure. In this specification, a numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper limit or lower limit value described in one numerical range may be replaced with the upper limit or lower limit value of another numerical range described in stages. In addition, in the numerical ranges described in this specification, the upper limit or lower limit value of the numerical range may be replaced with a value shown in the examples.

[0024] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate, and the same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0025] [Die bonding film] Fig. 1 is a schematic cross-sectional view showing one embodiment of a die bonding film. The die bonding film 10 shown in Fig. 1 has a first surface 10A and a second surface 10B opposite to the first surface 10A. The first surface 10A can be a surface to be placed on an adhesive layer of a dicing tape, as described below. The die bonding film 10 can be provided on a support film 20, as shown in Fig. 1. The die bonding film 10 is thermosetting, and can be in a semi-cured (B stage) state and then in a completely cured (C stage) state after a curing process.

[0026] The die bonding film 10 contains (a) conductive particles, and may further contain (b) a thermosetting resin, (c) a curing agent, and (d) an elastomer, as necessary.

[0027] (a) Component: Conductive particles The component (a) is a component used to enhance the heat dissipation in the die bonding film. Examples of the component (a) include metal particles such as nickel particles, copper particles, silver particles, and aluminum particles; carbon particles such as carbon black particles; fibrous carbon particles such as carbon nanotubes; and particles in which the surface of a core particle such as a metal particle or a resin particle is coated with a layer made of a conductive material. These may be used alone or in combination of two or more. Among these, the component (a) may be metal particles or metal-coated metal particles in which the surface of a metal particle is coated with a metal layer.

[0028] One embodiment of the component (a) has an electrical conductivity (0°C) of 40 x 10 6 The metal particles may be metal particles composed of a metal having a conductivity of 40×10 S / m or more. The metal particles may be metal particles composed of one type of metal, or may be metal-coated metal particles composed of two or more types of metal. By using such metal particles, the heat dissipation properties of the die bonding film can be further improved. 6 Examples of metals with a S / m or higher include gold (49×10 6 S / m), silver (67×10 6 S / m), copper (65×10 6 Electrical conductivity (0℃) is 45×10 6 S / m or more or 50×10 6 S / m or more. That is, the metal particles are preferably made of silver and / or copper.

[0029] Component (a) has an electrical conductivity (0°C) of 40×10 6 S / m or more, 45×10 6 S / m or more, or 50 x 10 6 The conductive particles may have a conductivity of S / m or more.

[0030] One embodiment of the component (a) may be metal particles made of a metal having a thermal conductivity (20°C) of 250 W / m·K or more. The metal particles may be metal particles made of one type of metal, or may be metal-coated metal particles made of two or more types of metal. By using such metal particles, the heat dissipation properties of the die bonding film can be further improved. Examples of metals having a thermal conductivity (20°C) of 250 W / m·K or more include gold (295 W / m·K), silver (418 W / m·K), and copper (372 W / m·K). The thermal conductivity (20°C) may be 300 W / m·K or more or 350 W / m·K or more. That is, the metal particles are preferably made of silver and / or copper.

[0031] Component (a) may be conductive particles having a thermal conductivity (20°C) of 250 W / m·K or more, 300 W / m·K or more, or 350 W / m·K or more.

[0032] Among these, component (a) may be metal particles having silver on the surface, since it has excellent electrical conductivity and thermal conductivity and is difficult to oxidize, and more specifically, may be silver-coated copper particles (silver-coated copper powder) in which the surface of silver particles or copper particles is coated with silver. Silver particles and silver-coated copper particles (silver-coated copper powder) have an electrical conductivity (0°C) of 50×10 6 S / m or more, and the thermal conductivity (20°C) can be 350 W / m K or more.

[0033] The shape of component (a) is not particularly limited and may be, for example, flake-like, spherical, etc., but component (a) is preferably spherical. When component (a) is spherical, a die bonding film having a predetermined surface roughness tends to be obtained easily even without physical smoothing treatment.

[0034] The average particle size of the (a) component may be 0.01 to 10 μm. When the average particle size of the (a) component is 0.01 μm or more, the viscosity increase when the adhesive varnish is prepared can be prevented, a desired amount of the (a) component can be contained in the die bonding film, and the wettability of the die bonding film to the adherend can be ensured, tending to exhibit better adhesion. When the average particle size of the (a) component is 10 μm or less, the film formability is excellent, and the heat dissipation due to the addition of conductive particles tends to be improved. In addition, by setting the average particle size in this range, the thickness of the die bonding film can be made thinner, and the semiconductor chips can be highly laminated, and the occurrence of chip cracks due to the conductive particles protruding from the die bonding film tends to be prevented. The average particle size of the (a) component may be 0.1 μm or more, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or more, and may be 8.0 μm or less, 7.0 μm or less, 6.0 μm or less, 5.0 μm or less, 4.0 μm or less, or 3.0 μm or less. When the average particle size of the (a) component is 5.0 μm or less, a die bonding film having a predetermined surface roughness tends to be obtained easily even without performing a physical smoothing treatment. The average particle size of the (a) component is the particle size (D) when the ratio (volume fraction) of the volume of the (a) component to the total volume of the (a) component is 50%. 50 (a) Average particle size of the component (D 50 ) can be determined by measuring a suspension of component (a) in water by a laser scattering method using a laser scattering type particle size measuring device (e.g., Microtrac).

[0035] It is preferable that component (a) be in the form of spherical particles with an average particle size of 5.0 μm or less.

[0036] The content of the (a) component is 75% by mass or more based on the total amount of the die bonding film. When the content of the (a) component is 75% by mass or more based on the total amount of the die bonding film, the thermal conductivity of the die bonding film can be improved, and as a result, the heat dissipation property can be improved. The content of the (a) component may be 77% by mass or more, 80% by mass or more, 83% by mass or more, or 85% by mass or more based on the total amount of the die bonding film. The upper limit of the content of the (a) component is not particularly limited, but may be 95% by mass or less, 92% by mass or less, or 90% by mass or less based on the total amount of the die bonding film.

[0037] The content of the (a) component may be 300 parts by mass or more, 400 parts by mass or more, 500 parts by mass or more, or 550 parts by mass or more, based on 100 parts by mass of the total amount of the components other than the (a) component of the die bonding film. When the content of the (a) component is 300 parts by mass or more, based on 100 parts by mass of the total amount of the components other than the (a) component of the die bonding film, the thermal conductivity of the die bonding film can be improved, and as a result, the heat dissipation property can be improved. The upper limit of the content of the (a) component is not particularly limited, but may be 1900 parts by mass or less, 1200 parts by mass or less, 1000 parts by mass or less, or 900 parts by mass or less, based on 100 parts by mass of the total amount of the components other than the (a) component of the die bonding film.

[0038] (b) Component: Thermosetting resin Component (b) is a component that has the property of forming three-dimensional bonds between molecules and curing by heating or the like, and is a component that exhibits adhesive properties after curing. Component (b) may be an epoxy resin. Component (b) may contain an epoxy resin that is liquid at 25°C. The epoxy resin may be any epoxy resin that has an epoxy group in the molecule. The epoxy resin may have two or more epoxy groups in the molecule.

[0039] Examples of epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins, bisphenol F novolac type epoxy resins, stilbene type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenol methane type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, dicyclopentadiene type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene. These may be used alone or in combination of two or more. Among these, the epoxy resin may be a bisphenol type epoxy resin or a cresol novolac type epoxy resin from the viewpoint of heat resistance of the cured product.

[0040] The (b) component may contain an epoxy resin that is liquid at 25°C. When the (b) component contains such an epoxy resin, a die bonding film having a predetermined surface roughness tends to be obtained. In addition, even when a physical smoothing treatment is performed, it tends to be possible to perform the treatment under milder conditions. Examples of commercially available epoxy resins that are liquid at 25°C include EXA-830CRP (trade name, manufactured by DIC Corporation) and YDF-8170C (trade name, manufactured by Nippon Steel Chemical & Material Co., Ltd.).

[0041] The epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 110 to 290 g / eq. When the epoxy equivalent of the (A) component is within such a range, the bulk strength of the die bonding film is maintained, and the flowability of the adhesive composition when forming the die bonding film tends to be easily ensured.

[0042] The content of the (b) component may be 0.1 mass% or more, 1 mass% or more, 2 mass% or more, or 3 mass% or more, and may be 15 mass% or less, 12 mass% or less, 10 mass% or less, or 8 mass% or less, based on the total amount of the die bonding film.

[0043] When the (b) component contains an epoxy resin that is liquid at 25°C, the mass ratio of the epoxy resin to the (b) component (mass of the epoxy resin / total mass of the (b) component) may be, in percentage, 10 to 100%, 40 to 100%, 60% to 100%, or 80% to 100%. When the (b) component contains an epoxy resin that is liquid at 25°C, the content of the epoxy resin may be 1 mass% or more, 2 mass% or more, 3 mass% or more, or 4 mass% or more based on the total amount of the die bonding film. The content of the epoxy resin may be 15 mass% or less, 12 mass% or less, 10 mass% or less, or 8 mass% or less.

[0044] (c) Component: Hardener The component (c) may be a phenolic resin that can be a curing agent for epoxy resins. Any phenolic resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of phenolic resins include novolac-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, and phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl-type phenolic resins, and phenyl aralkyl-type phenolic resins synthesized from phenols such as phenol and / or naphthols with dimethoxy-paraxylene or bis(methoxymethyl)biphenyl, and the like. These may be used alone or in combination of two or more.

[0045] The hydroxyl equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq. When the hydroxyl equivalent of the phenol resin is 40 g / eq or more, the storage modulus of the film tends to be improved, and when it is 300 g / eq or less, defects due to the generation of foaming, outgassing, etc. can be prevented.

[0046] The ratio of the epoxy equivalent of the epoxy resin (b) to the hydroxyl equivalent of the phenol resin (c) (epoxy equivalent of the epoxy resin (b) / hydroxyl equivalent of the phenol resin (c)) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and more sufficient fluidity can be obtained.

[0047] The content of the (c) component may be 0.1 mass% or more, 1 mass% or more, 2 mass% or more, or 3 mass% or more, and may be 15 mass% or less, 12 mass% or less, 10 mass% or less, or 8 mass% or less, based on the total amount of the die bonding film.

[0048] (d) Component: Elastomer Examples of the (d) component include polyimide resin, acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin, etc. The (d) component may be any of these resins having a crosslinkable functional group, or may be an acrylic resin having a crosslinkable functional group. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth)acrylic acid ester. The acrylic resin may be a polymer containing a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group as a structural unit. The acrylic resin may also be an acrylic rubber such as a copolymer of a (meth)acrylic acid ester and an acrylonitrile. These may be used alone or in combination of two or more.

[0049] Commercially available acrylic resins include, for example, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, and HTR-860P-3CSP-3DB (all manufactured by Nagase ChemteX Corporation).

[0050] The glass transition temperature (Tg) of the (d) component may be -50 to 50°C or -30 to 20°C. When the Tg of the acrylic resin is -50°C or higher, the tackiness of the die bonding film tends to be lowered, and thus the handleability tends to be improved. When the Tg of the acrylic resin is 50°C or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently ensured. Here, the glass transition temperature (Tg) of the (d) component means a value measured using a DSC (differential scanning calorimeter) (for example, Thermo Plus 2, product name, manufactured by Rigaku Corporation).

[0051] The weight average molecular weight (Mw) of the (d) component may be 50,000 to 1,200,000, 100,000 to 1,200,000, or 300,000 to 900,000. When the weight average molecular weight of the (d) component is 50,000 or more, the film-forming property tends to be more excellent. When the weight average molecular weight of the (d) component is 1,200,000 or less, the adhesive composition tends to have more excellent fluidity when forming a die bonding film. The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve of standard polystyrene.

[0052] The measurement device, measurement conditions, etc. for the weight average molecular weight (Mw) of the component (d) are, for example, as follows: Pump: L-6000 (manufactured by Hitachi, Ltd.) Column: A column consisting of Gelpack GL-R440 (Hitachi Chemical Co., Ltd.), Gelpack GL-R450 (Hitachi Chemical Co., Ltd.), and Gelpack GL-R400M (Hitachi Chemical Co., Ltd.) (each 10.7 mm (diameter) × 300 mm) connected in this order. Eluent: tetrahydrofuran (hereinafter referred to as "THF") Sample: 120 mg of sample dissolved in 5 mL of THF Flow rate: 1.75mL / min

[0053] The content of the (d) component may be 0.1 mass% or more, 0.5 mass% or more, 1 mass% or more, or 2 mass% or more, and may be 10 mass% or less, 8 mass% or less, 6 mass% or less, or 5 mass% or less, based on the total amount of the die bonding film.

[0054] The die bonding film 10 may further contain (e) a curing accelerator.

[0055] (e) Component: Curing accelerator By containing the component (e), the die bonding film tends to be able to achieve both adhesiveness and connection reliability. Examples of the component (e) include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among these, the component (e) may be imidazoles and their derivatives from the viewpoint of reactivity.

[0056] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. These may be used alone or in combination of two or more.

[0057] The content of the component (e) may be 0.001 to 1 mass % based on the total amount of the die bonding film. When the content of the component (e) is in this range, there is a tendency that both adhesiveness and connection reliability can be more effectively achieved.

[0058] The die bonding film 10 may further contain, as other components in addition to the components (a) to (e), a coupling agent, an antioxidant, a rheology control agent, a leveling agent, etc. Examples of coupling agents include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, etc. The content of the other components may be 0.01 to 3 mass% based on the total amount of the die bonding film.

[0059] The die bonding film 10 shown in FIG. 1 can be produced by forming an adhesive composition containing the above-mentioned component (a), and, if necessary, components (b) to (e) and other components, into a film. Such a die bonding film 10 can be formed by applying the adhesive composition to a support film 20. The adhesive composition can be used as an adhesive varnish diluted with a solvent. When an adhesive varnish is used, the adhesive varnish is applied to the support film 20, and the solvent is removed by heating and drying, thereby forming the die bonding film 10.

[0060] The solvent is not particularly limited as long as it can dissolve components other than the component (a). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These may be used alone or in combination of two or more. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoints of solubility and boiling point. The solid component concentration in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.

[0061] The adhesive varnish can be prepared by mixing and kneading the components (a) to (e), other components, and a solvent. The order of mixing and kneading the components is not particularly limited and can be set appropriately. Mixing and kneading can be performed by appropriately combining a dispersing machine such as a normal stirrer, a grinding machine, a triple roll, a ball mill, or a bead mill. After preparing the adhesive varnish, air bubbles in the varnish can be removed by vacuum deaeration or the like.

[0062] The support film 20 is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, etc. The support film may be subjected to a release treatment. The thickness of the support film 20 may be, for example, 10 to 200 μm or 20 to 170 μm.

[0063] The adhesive varnish can be applied to the support film 20 by a known method, such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, etc. The conditions for heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, and may be, for example, at 50 to 200° C. for 0.1 to 90 minutes.

[0064] The thickness of the die bonding film 10 can be appropriately adjusted depending on the application, and may be, for example, 3 to 200 μm. When the thickness of the die bonding film 10 is 3 μm or more, the adhesive strength tends to be sufficient, and when the thickness is 200 μm or less, the heat dissipation tends to be sufficient. The thickness of the die bonding film 10 may be 5 to 100 μm or 10 to 75 μm from the viewpoints of adhesive strength and thinning of the semiconductor device.

[0065] In the die bonding film 10, the surface roughness of the first surface 10A is 1.0 μm or less, and the surface roughness of the second surface 10B is 1.0 μm or less. Here, the first surface 10A and the second surface 10B can be arbitrarily determined, but in consideration of the contents of the dicing-die bonding integrated film described later, in this specification, the surface placed on the adhesive layer of the dicing tape (i.e., the surface opposite to the surface in contact with the support film 20 of the die bonding film 10) is the first surface 10A, and the surface in contact with the support film 20 of the die bonding film 10 is the second surface 10B. In this specification, the surface roughness means the arithmetic mean roughness Ra (JIS B 0601-2001), and the "arithmetic mean roughness Ra" can be measured, for example, by the method described in the Examples. The measurement magnification may be 50 to 100 times.

[0066] When the second surface 10B is formed by a manufacturing method in which an adhesive varnish is applied to the support film 20 and the solvent is removed by heating and drying, the surface roughness of the surface generally tends to be 1.0 μm or less, regardless of the components contained in the adhesive varnish. On the other hand, when the first surface 10A is formed by a manufacturing method in which an adhesive varnish is applied to the support film 20 and the solvent is removed by heating and drying, the surface roughness of the surface generally tends to be affected by the components contained in the adhesive varnish. The surface roughness of the first surface 10A can be adjusted to 1.0 μm or less, for example, by using particles having an average particle size of 5.0 μm or less and / or spherical particles (a) component. When the surface roughness of the first surface 10A exceeds 1.0 μm, the surface roughness can be adjusted to 1.0 μm or less, for example, by performing a physical smoothing treatment.

[0067] The smoothing treatment can be performed, for example, by pressing the first surface 10A of the die bonding film 10 through a polyethylene film (PE film), a polyethylene terephthalate film (PET film), or the like. In this case, the die bonding film 10 may be heated while being pressed. The pressing can be performed, for example, using a rubber roll, a metal roll, or the like. The load during pressing may be 0.01 to 3.0 MPa or 0.3 to 1.0 MPa. When the load during pressing is 0.01 MPa or more, a sufficient smoothing effect tends to be obtained, and when the load during pressing is 3.0 MPa or less, the load on the device tends to be reduced and continuous processing tends to be possible. The heating temperature during pressing may be room temperature (20°C) to 200°C or 50°C to 140°C. When the heating temperature during pressing is 200°C or less, the progress of the curing reaction of the die bonding film 10 tends to be suppressed. Furthermore, the smoothing treatment can be carried out under milder conditions by containing, in component (a), an epoxy resin that is liquid at 25° C. in a predetermined range.

[0068] It is preferable that the surface roughness of the first surface 10A is greater than the surface roughness of the second surface 10B. By applying such a die bonding film 10 to a dicing / die bonding integrated film, the adhesive force between the die bonding film and the adhesive layer (dicing tape) during dicing is excellent, and chip flying and the like tends to be suppressed.

[0069] The surface roughness of the first surface 10A may be 1.0 μm or less, for example, 0.9 μm or less, 0.8 μm or less, or 0.75 μm or less, from the viewpoint of preventing a decrease in adhesiveness due to the surface roughness. The surface roughness of the first surface 10A may be 0.25 μm or more, 0.3 μm or more, 0.4 μm or more, 0.5 μm or more, 0.6 μm or more, or 0.65 μm or more, from the viewpoint of preventing a decrease in anchor effect due to an excessively high surface smoothness. The surface roughness of the second surface 10B may be, for example, 0.9 μm or less, 0.8 μm or less, 0.7 μm or less, 0.6 μm or less, or less than 0.65 μm, and may be 0.25 μm or more, 0.3 μm or more, 0.4 μm or more, or 0.45 μm or more, from the same viewpoint.

[0070] The thermal conductivity (25°C) of the die bonding film 10 may be 1.6 W / m·K or more. When the thermal conductivity of the die bonding film 10 is 1.6 W / m·K or more, the dicing-die bonding integrated film tends to have better heat dissipation. The thermal conductivity of the die bonding film may be 1.7 W / m·K or more, 2.0 W / m·K or more, or 2.3 W / m·K or more. The upper limit of the thermal conductivity of the die bonding film 10 is not particularly limited, but may be 30 W / m·K or less. In this specification, the "thermal conductivity" can be calculated, for example, by the method described in the Examples.

[0071] [Dicing and die bonding integrated film] 2 is a schematic cross-sectional view showing one embodiment of a dicing-die bonding integrated film. The dicing-die bonding integrated film 100 shown in FIG. 2 includes a dicing tape 50 having a substrate 40 and an adhesive layer 30 provided on the substrate 40, and a die bonding film 10 having a first surface 10A and a second surface 10B opposite to the first surface 10A, and disposed on the adhesive layer 30 of the dicing tape 50 such that the adhesive layer 30 and the first surface 10A are in contact with each other. The dicing-die bonding integrated film 100 may include a support film 20 on the second surface 10B of the die bonding film 10.

[0072] Examples of the substrate 40 in the dicing tape 50 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Furthermore, the substrate 40 may be subjected to a surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, as necessary.

[0073] The adhesive layer 30 may be made of an adhesive used in the field of dicing tapes, and may be made of a pressure-sensitive adhesive or an ultraviolet-curing adhesive. When the adhesive layer 30 is made of an ultraviolet-curing adhesive, the adhesive layer 30 may have a property of decreasing its adhesiveness by irradiation with ultraviolet rays.

[0074] The dicing and die bonding integrated film 100 can be produced by preparing a dicing tape 50 and a die bonding film 10, and attaching the first surface 10A of the die bonding film 10 to the adhesive layer 30 of the dicing tape 50. At this time, if the surface roughness of the first surface 10A exceeds 1.0 μm, the dicing and die bonding integrated film 100 may not be formed.

[0075] In the dicing / die bonding integrated film 100, the die bonding film 10 contains 75% by mass or more of conductive particles based on the total amount of the die bonding film. In the die bonding film 10, the surface roughness of the first surface 10A is 1.0 μm or less, and the surface roughness of the second surface 10B is 1.0 μm or less. Such a dicing / die bonding integrated film has excellent heat dissipation properties, excellent adhesion between the adhesive layer made of the die bonding film and the adhesive layer, and when attached to a semiconductor wafer, can have excellent adhesion between the adhesive layer made of the die bonding film and the semiconductor wafer.

[0076] In the dicing-die bonding integrated film 100, the surface roughness of the first surface 10A and the second surface 10B measured in the die bonding film 10 tends to be maintained as is. According to the tests of the present inventors, for example, irradiation of the dicing tape with ultraviolet light does not substantially affect the surface roughness of the first surface 10A of the die bonding film 10. Therefore, the surface roughness of the first surface 10A and the second surface 10B of the die bonding film 10 can be obtained by exposing the first surface 10A and the second surface 10B of the die bonding film 10 from the dicing-die bonding integrated film 100 and measuring the surface roughness of the exposed first surface and second surface. When exposing the first surface 10A and the second surface 10B, the first surface 10A and the second surface 10B may be exposed by peeling off the dicing tape 50 and the support film 20 in the dicing-die bonding integrated film 100 at room temperature (20°C), or, if necessary, the first surface 10A and the second surface 10B may be exposed by laminating and transferring onto a semiconductor wafer, substrate, etc. at about 40 to 80°C.

[0077] [Manufacturing method for semiconductor device (semiconductor package)] 3A, 3B, 3C, 3D, 3E, and 3F are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device, in which (a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. The method for manufacturing the semiconductor device includes a step of attaching the second surface 10B of the die bonding film 10 (adhesive layer) of the dicing-die bonding integrated film 100 to a semiconductor wafer W (wafer lamination step, see Figs. 3(a) and 3(b)), a step of dividing the semiconductor wafer W, the die bonding film 10 (adhesive layer), and the adhesive layer 30 (dicing step, see Fig. 3(c)), a step of irradiating the adhesive layer 30 (through the substrate 40) with ultraviolet light as necessary (ultraviolet light irradiation step, see Fig. 3(d)), a step of picking up the semiconductor chip Wa (semiconductor element 60 with adhesive piece) to which the die bonding film piece 10a is attached from the adhesive layer 30a (pickup step, see Fig. 3(e)), and a step of adhering the semiconductor element 60 with adhesive piece to a support substrate 80 through the die bonding film piece 10a (semiconductor element adhering step, see Fig. 3(f)).

[0078] <Wafer lamination process> First, the dicing / die bonding integrated film 100 is placed in a predetermined device. Then, the second surface 10B of the die bonding film 10 (adhesive layer) of the dicing / die bonding integrated film 100 is attached to the surface Ws of the semiconductor wafer W (see FIGS. 3(a) and 3(b)). The circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the surface Ws.

[0079] <Dicing process> Next, the semiconductor wafer W and the die bonding film 10 (adhesive layer) are diced (see FIG. 3(c)). At this time, a part of the adhesive layer 30, or the entire adhesive layer 30 and a part of the base material 40 may be diced. In this manner, the dicing / die bonding integrated film 100 also functions as a dicing sheet.

[0080] <Ultraviolet irradiation process> When the adhesive layer 30 is made of an ultraviolet-curing adhesive, the adhesive layer 30 may be irradiated with ultraviolet rays (through the substrate 40) as necessary (see FIG. 3(d)). When an ultraviolet-curing adhesive is used, the adhesive layer 30 is cured, and the adhesive strength between the adhesive layer 30 and the die bonding film 10 (adhesive layer) can be reduced. For ultraviolet irradiation, it is preferable to use ultraviolet rays with a wavelength of 200 to 400 nm. The ultraviolet irradiation conditions are illuminance and dose of 30 to 240 mW / cm, respectively. 2 range and 50~500mJ / cm 2 It is preferable to adjust the temperature to within the range of 100° C. to 150° C.

[0081] <Pickup process> Next, the substrate 40 is expanded to separate the diced semiconductor elements 60 with adhesive pieces from each other, while the semiconductor elements 60 with adhesive pieces pushed up by the needles 72 from the substrate 40 side are sucked by the suction collet 74 and picked up from the adhesive layer 30a (see FIG. 3(e)). The semiconductor elements 60 with adhesive pieces have a semiconductor chip Wa and a die bonding film piece 10a. The semiconductor chip Wa is obtained by dicing the semiconductor wafer W into individual pieces, and the die bonding film piece 10a is obtained by dicing the die bonding film 10 into individual pieces. The adhesive layer 30a is obtained by dicing the adhesive layer 30 into individual pieces. The adhesive layer 30a may remain on the substrate 40 when the semiconductor elements 60 with adhesive pieces are picked up. In the pick-up process, it is not necessarily necessary to expand the substrate 40, but by expanding the substrate 40, the pick-up property can be further improved.

[0082] The amount of push-up by the needle 72 can be set appropriately. Furthermore, from the viewpoint of ensuring sufficient pick-up performance even for an extremely thin wafer, for example, two-stage or three-stage push-up may be performed. Furthermore, the semiconductor element 60 with the adhesive piece attached may be picked up by a method other than the method using the suction collet 74.

[0083] <Semiconductor element bonding process> After picking up the semiconductor element 60 with the adhesive piece, the semiconductor element 60 with the adhesive piece is bonded to the support substrate 80 via the die bonding film piece 10a by thermocompression bonding (see FIG. 3(f)). A plurality of semiconductor elements 60 with adhesive pieces may be bonded to the support substrate 80.

[0084] The method for manufacturing a semiconductor device may further include, as necessary, a step of electrically connecting the semiconductor chip Wa and the support substrate 80 by wire bonding, and a step of resin-sealing the semiconductor chip Wa on the surface 80A of the support substrate 80 using a resin sealing material.

[0085] Fig. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in Fig. 4 can be manufactured through the above-mentioned steps. In the semiconductor device 200, the semiconductor chip Wa and the support substrate 80 may be electrically connected by wire bonds 70. In the semiconductor device 200, the semiconductor chip Wa may be resin-encapsulated on the front surface 80A of the support substrate 80 using a resin encapsulant 92. Solder balls 94 may be formed on the surface of the support substrate 80 opposite to the front surface 80A for electrical connection with an external substrate (motherboard). EXAMPLES

[0086] The present disclosure will be described below with reference to examples, but the present disclosure is not limited to these examples.

[0087] <Preparation of adhesive varnish> Cyclohexanone was added to (b) epoxy resin as a thermosetting resin, (c) phenolic resin as a curing agent, and (d) acrylic rubber as an elastomer, with the symbols and composition ratios (unit: parts by mass) shown in Table 1, and the mixture was stirred to obtain a mixture. After each component was dissolved, (a) conductive particles were added to the mixture, and the mixture was stirred with a dispersing blade to disperse each component until it was uniform. Then, (e) a curing accelerator was added, and each component was dispersed until it was uniform, to obtain adhesive varnishes A to E.

[0088] The symbols for each component in Table 1 have the following meanings.

[0089] (a) Conductive particles 20%Ag-Cu-MA (Fukuda Metal Foil and Powder Co., Ltd., product name of silver-coated copper powder, shape: flake, average particle size (laser 50% particle size (D 50 )):6.0~8.8μm) AO-UCI-9 (Product name of silver-coated copper powder manufactured by DOWA Electronics Co., Ltd., Shape: Spherical, Average particle size (Laser 50% particle size (D 50 )):2.3μm)

[0090] (b) Thermosetting resin N500P-10 (product name, DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 203g / eq) YDCN-700-10 (product name, Nippon Steel Chemical & Material Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 215g / eq) EXA-830CRP (product name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 159g / eq, liquid at 25℃)

[0091] (c) Hardener MEH-7800M (product name, manufactured by Meiwa Kasei Co., Ltd., phenolic resin, viscosity (150°C): 0.31-0.43 Pa·s (3.1-4.3 poise), hydroxyl equivalent: 175 g / eq) HE-100C-30 (product name, manufactured by Air Water Inc., phenylaralkyl type phenolic resin, viscosity (150°C): 0.27-0.41 Pa·s (2.7-4.1 poise), hydroxyl equivalent: 170 g / eq)

[0092] (d) Elastomer HTR-860P-3 (product name, Nagase ChemteX Corporation, glycidyl group-containing acrylic rubber, weight average molecular weight: 1 million, Tg: -7°C)

[0093] (e) Curing accelerator Curesol 2PZ-CN (product name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[0094] [Table 1]

[0095] Example 1 <Preparation of die bonding film> Adhesive varnish B was used to prepare the die bonding film. The adhesive varnish B, which had been vacuum degassed, was applied onto a polyethylene terephthalate (PET) film (thickness 38 μm) that had been subjected to a release treatment, which was a support film. The applied varnish was heated and dried in two stages, at 90° C. for 5 minutes and then at 140° C. for 5 minutes, to prepare a die bonding film having a thickness of 20 μm in a B-stage state on the support film. The surface of the prepared die bonding film opposite to the support film was the first surface, and the surface of the die bonding film in contact with the support film was the second surface. The first surface of the prepared die bonding film was pressed through the PET film using a rubber roll under conditions of a temperature of 140° C., a pressure of 0.5 MPa, and a speed of 0.1 m / min to perform a smoothing treatment on the surface, thereby obtaining the die bonding film of Example 1.

[0096] <Surface roughness measurement> The surface roughness of the die bonding film of Example 1 was measured. The surface roughness (arithmetic mean roughness Ra (JIS B 0601-2001)) was determined by measuring at a magnification of 50 times using a shape measuring laser microscope VK-X100 (manufactured by Keyence Corporation). The surface roughness of the surface (first surface) opposite the support film of the die bonding film was measured as it was, since the surface was exposed. The surface roughness of the surface (second surface) of the die bonding film in contact with the support film was measured after peeling off the support film to expose the surface. The results are shown in Table 2.

[0097] <Measurement of thermal conductivity> (Preparation of Laminate) Using Leon13DX (manufactured by Lamy Corporation), the die bonding film was laminated at 70° C. to a thickness of 100 μm or more to obtain a laminate.

[0098] (Preparation of measurement samples) The laminate was subjected to a thermal history of 110° C. for 30 minutes and 175° C. for 180 minutes to obtain a measurement sample.

[0099] (Measurement of thermal conductivity) The thermal conductivity of the measurement sample was calculated using the following formula. The results are shown in Table 2. Thermal conductivity (W / m K) = specific heat (J / kg K) × thermal diffusivity (m 2 / s) x specific gravity (kg / m 3 ) The specific heat, thermal diffusivity, and specific gravity were measured by the following methods. Higher thermal conductivity means better heat dissipation.

[0100] (Measurement of specific heat (25℃)) Measurement equipment: Differential scanning calorimeter (PerkinElmer Japan Co., Ltd., product name: DSC8500) Reference material: Sapphire Heating rate: 10℃ / min Heating temperature range: 20℃~100℃

[0101] (Measurement of thermal diffusivity) Measurement equipment: Thermal diffusivity measurement equipment (manufactured by Netsch Japan Co., Ltd., product name: LFA467 HyperFlash) - Sample preparation: Both sides of the sample are blackened with carbon spray. Measurement method: Xenon flash method Measurement ambient temperature: 25℃

[0102] (Measurement of specific gravity) Measurement device: Electronic specific gravity meter (manufactured by Alpha Mirage, product name: SD200L) Measurement method: Archimedes method

[0103] <Preparation of integrated dicing and die bonding film> A dicing tape having a substrate and an adhesive layer was prepared, and the first surface of the die bonding film of Example 1 was attached to the adhesive layer of the dicing tape at 25°C to obtain a dicing-die bonding integrated film of Example 1 having a die bonding film and a dicing tape.

[0104] Example 2 The die bonding film of Example 2 was obtained in the same manner as in Example 1, except that adhesive varnish C was used to prepare the die bonding film, and the surface was smoothed by pressing with a rubber roll under conditions of a temperature of 60°C, a pressure of 0.5 MPa, and a speed of 0.1 m / min. The surface roughness and thermal conductivity of the die bonding film of Example 2 were measured in the same manner as in Example 1. The results are shown in Table 2. Furthermore, a dicing-die bonding integrated film of Example 2 was obtained in the same manner as in Example 1.

[0105] Example 3 A die bonding film of Example 3 was obtained in the same manner as in Example 1, except that adhesive varnish D was used in the production of the die bonding film and smoothing treatment was not performed. The surface roughness and thermal conductivity of the die bonding film of Example 3 were measured in the same manner as in Example 1. The results are shown in Table 2. A dicing-die bonding integrated film of Example 3 was also obtained in the same manner as in Example 1.

[0106] Example 4 A die bonding film of Example 4 was obtained in the same manner as in Example 1, except that adhesive varnish E was used in the production of the die bonding film and smoothing treatment was not performed. The surface roughness and thermal conductivity of the die bonding film of Example 4 were measured in the same manner as in Example 1. The results are shown in Table 2. A dicing-die bonding integrated film of Example 4 was also obtained in the same manner as in Example 1.

[0107] Comparative Example 1 A die bonding film of Comparative Example 1 was obtained in the same manner as in Example 1, except that adhesive varnish A was used in the production of the die bonding film and smoothing treatment was not performed. The surface roughness and thermal conductivity of the die bonding film of Comparative Example 1 were measured in the same manner as in Example 1. The results are shown in Table 2. A dicing-die bonding integrated film of Comparative Example 1 was also obtained in the same manner as in Example 1.

[0108] Comparative Example 2 A die bonding film of Comparative Example 2 was obtained in the same manner as in Example 1, except that the smoothing treatment was not performed. The surface roughness and thermal conductivity of the die bonding film of Comparative Example 2 were measured in the same manner as in Example 1. The results are shown in Table 2. An attempt was made to produce a dicing / die bonding integrated film, but the adhesion between the first surface of the die bonding film and the adhesive layer was insufficient, and a dicing / die bonding integrated film could not be produced by the same method as in Example 1.

[0109] Comparative Example 3 The die bonding film of Comparative Example 2 was used to prepare the dicing / die bonding integrated film of Comparative Example 3. First, in the die bonding film of Comparative Example 2, the first surface of the die bonding film was transferred to another support film (a polyethylene terephthalate (PET) film (thickness 38 μm) that had been subjected to a release treatment). Next, the support film on the second surface side was peeled off, and the exposed second surface was attached to the adhesive layer of the same dicing tape as in Comparative Example 2 at 25° C., thereby obtaining the dicing / die bonding integrated film of Comparative Example 3.

[0110] <Evaluation of adhesion during dicing process> Dicing and die bonding integrated films of Examples 1 to 4 and Comparative Examples 1 and 3 were prepared. The support film of the dicing and die bonding integrated film was peeled off, and the die bonding film (adhesive layer) of the dicing and die bonding integrated film was attached to a semiconductor wafer having a thickness of 100 μm using a film laminator (manufactured by Teikoku Taping System Co., Ltd.) to obtain a test specimen. The test specimen was diced into individual pieces having a size of 2 mm x 2 mm, and then the test specimen was observed to evaluate the adhesion between the die bonding film piece (adhesive layer) and the adhesive layer and the adhesion between the die bonding film piece (adhesive layer) and the semiconductor wafer. Dicing was performed by a step cut method using two blades, and dicing blades SD4000-BB and SD4000-DD were used. In the step cut method, dicing was performed to a position 50 μm deep in the semiconductor wafer in the first cut, and then dicing was performed to a position 20 μm deep in the base material of the dicing tape in the second cut. The dicing conditions were a blade rotation speed of 4000 rpm and a cutting speed of 30 mm / sec. After dicing, the gap between the die bonding film piece (adhesive layer) and the adhesive layer was observed, and those that did not peel were rated as "A", and those that did peel were rated as "B". The gap between the die bonding film piece (adhesive layer) and the semiconductor wafer was observed, and those that did not peel were rated as "A", and those that did peel were rated as "B". The results are shown in Table 2.

[0111] [Table 2]

[0112] As shown in Table 2, Comparative Example 1, which does not satisfy the requirement of containing 75% or more by mass of conductive particles based on the total amount of the die bonding film, had insufficient thermal conductivity. In addition, Comparative Example 2, which does not satisfy the requirement that the surface roughness of the first surface is 1.0 μm or less, had insufficient adhesion between the die bonding film (adhesive layer) and the adhesive layer of the dicing tape, so that a dicing-die bonding integrated film could not be produced. Furthermore, Comparative Example 3, which does not satisfy the requirement that the surface roughness of the second surface is 1.0 μm or less, had insufficient adhesion between the die bonding film piece (adhesive layer) and the semiconductor wafer. From these, it can be seen that there is a need to reduce the surface roughness on both sides of the die bonding film to make them smooth. As a method for reducing the surface roughness, it was found that performing a physical smoothing treatment is effective, as shown in Example 1. In addition, as shown in Example 2, it was found that the conditions for the smoothing treatment can be made milder by increasing the content of epoxy resin that is liquid at 25° C. as (b) the thermosetting resin (for example, 2% by mass or more based on the total amount of the die bonding film). Furthermore, as shown in Examples 3 and 4, it was found that by using conductive particles with a small average particle size and spherical shape, it is possible to reduce the surface roughness on both sides of the die bonding film without performing a smoothing treatment.

[0113] From the above, it has been confirmed that a dicing-die bonding integrated film having an adhesive layer and a pressure-sensitive adhesive layer according to one aspect of the present disclosure has excellent heat dissipation properties, excellent adhesion between the adhesive layer and the pressure-sensitive adhesive layer, and further, when attached to a semiconductor wafer, has excellent adhesion between the adhesive layer and the semiconductor wafer. [Explanation of symbols]

[0114] 10...die bonding film, 10A...first surface, 10B...second surface, 10a...die bonding film piece, 20...support film, 30, 30a...adhesive layer, 40...substrate, 50...dicing tape, 60...semiconductor element with adhesive piece, 70...wire bond, 72...needle, 74...suction collet, 80...support substrate, 92...resin encapsulant, 94...solder ball, 100...dicing and die bonding integrated film, 200...semiconductor device.

Claims

1. a dicing tape having a substrate and an adhesive layer provided on the substrate; a die bonding film having a first surface and a second surface opposite to the first surface, the die bonding film being disposed on the adhesive layer of the dicing tape such that the adhesive layer and the first surface are in contact with each other; Equipped with The die bonding film contains 75% by mass or more of conductive particles based on the total amount of the die bonding film, In the die bonding film, the first surface has a surface roughness of 0.25 μm or more and 1.0 μm or less, and the second surface has a surface roughness of 1.0 μm or less. Integrated dicing and die bonding film.

2. The dicing-die bonding integrated film according to claim 1 , wherein the surface roughness of the first surface is greater than the surface roughness of the second surface.

3. 3. The dicing and die bonding integrated film according to claim 1, wherein the die bonding film has a thermal conductivity of 1.6 W / m·K or more.

4. The dicing-die bonding integrated film according to any one of claims 1 to 3, wherein the conductive particles are spherical.

5. 5. The dicing-die bonding integrated film according to claim 4, wherein the conductive particles have an average particle size of 3.0 μm or less.

6. The dicing and die bonding integrated film according to any one of claims 1 to 5, wherein the conductive particles have a thermal conductivity (20°C) of 250 W / m·K or more.

7. The dicing and die bonding integrated film according to any one of claims 1 to 6, wherein the die bonding film further contains a thermosetting resin, a curing agent, and an elastomer.

8. The thermosetting resin includes an epoxy resin that is liquid at 25°C, 8. The dicing and die bonding integrated film according to claim 7, wherein the content of the epoxy resin that is liquid at 25°C is 2 mass% or more based on the total amount of the die bonding film.

9. A step of attaching the second surface of the die bonding film of the dicing and die bonding integrated film according to any one of claims 1 to 8 to a semiconductor wafer; singulating the semiconductor wafer and the die bonding film; picking up the semiconductor chip having the die bonding film piece attached thereto from the dicing tape; bonding the semiconductor chip to a support substrate via the die bonding film piece; A manufacturing method of a semiconductor device comprising:

10. A die bonding film having a first surface and a second surface opposite the first surface, Based on the total amount of the die bonding film, the conductive particles are contained in an amount of 75% by mass or more, The surface roughness of the first surface is 0.25 μm or more and 1.0 μm or less, and the surface roughness of the second surface is 1.0 μm or less. Die bonding film.

11. The die bonding film of claim 10 , wherein the surface roughness of the first surface is greater than the surface roughness of the second surface.

12. The die bonding film according to claim 10 or 11, wherein the thermal conductivity of the die bonding film is 1.6 W / m·K or more.

13. The die bonding film according to any one of claims 10 to 12, wherein the conductive particles are spherical.

14. The die bonding film according to claim 13 , wherein the conductive particles have an average particle size of 3.0 μm or less.

15. The die bonding film according to any one of claims 10 to 14, wherein the conductive particles have a thermal conductivity (20°C) of 250 W / m·K or more.

16. The die bonding film according to any one of claims 10 to 15, further comprising a thermosetting resin, a curing agent, and an elastomer.

17. The thermosetting resin includes an epoxy resin that is liquid at 25°C, The die bonding film according to claim 16, wherein the content of the epoxy resin that is liquid at 25°C is 2 mass% or more based on the total amount of the die bonding film.

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