Detection Equipment

Abstract

To provide a detector that can prevent the occurrence of an unintentional pattern in light incident on a plurality of photodiodes.SOLUTION: A detector has: a substrate; a plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided respectively overlapping the plurality of photodiodes; and a light shielding layer provided between the plurality of photodiodes and the plurality of lenses and having a plurality of openings. An area overlapping one photodiode is provided with some of the plurality of openings, and the arrangement direction of the plurality of openings in the area overlapping one photodiode is inclined with respect to the first direction.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] Patent Document 1 describes an image input optical system having a lens array in which a plurality of lenses are arranged, an optical sensor array in which a plurality of optical sensors are arranged, and a pinhole array provided between the lens array and the optical sensor array. Patent Document 2 describes an optical imaging device having a light-shielding layer with an opening provided between a microlens and an optical sensor.

[0003] Patent Document 3 and Patent Document 4 each describe an optical fingerprint sensor disposed under a display device. In Patent Document 3, the arrangement direction of a plurality of optical sensors on a silicon substrate is inclined with respect to the arrangement direction of pixels of the display device. In Patent Document 4, the fingerprint sensor is provided inclined with respect to the long axis direction of the display device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 9-171154 [Patent Document 2] US Patent Application Publication No. 2020 / 0089928 [Patent Document 3] US Patent Application Publication No. 2018 / 0239941 [Patent Document 4] JP 2019-49716 A Summary of the Invention [Problem to be solved by the invention]

[0005] Due to the relationship between the arrangement of the photodiodes of the optical sensor and the arrangement of the wiring and light emitting elements of the display device placed on the optical sensor, unintended patterns such as moire (interference fringes) may occur in the light incident on the optical sensor. In Patent Documents 3 and 4, there are significant constraints in the manufacturing process of the optical sensor and the assembly process of the fingerprint sensor and the display device, which may make it difficult to realize the above-mentioned solutions.

[0006] An object of the present invention is to provide a detection device capable of suppressing the occurrence of unintended patterns in light incident on a plurality of photodiodes. [Means for solving the problem]

[0007] A detection device of one embodiment of the present invention comprises a substrate, a plurality of photodiodes provided on the substrate and arranged in a first direction, a plurality of lenses provided overlapping each of the photodiodes, and a light-shielding layer provided between the photodiodes and the lenses and having a plurality of openings, wherein the plurality of openings are provided in a region overlapping one of the photodiodes, and the arrangement direction of the plurality of openings in the region overlapping one of the photodiodes is inclined with respect to the first direction.

[0008] A detection device of one embodiment of the present invention comprises a substrate, a plurality of photodiodes provided on the substrate and arranged in a first direction, a plurality of lenses provided overlapping each of the photodiodes, and a light-shielding layer provided between the photodiodes and the lenses and having a plurality of openings, wherein the plurality of openings are provided in a region overlapping one of the photodiodes, and at least one of the plurality of openings in the region overlapping one of the photodiodes has a diameter different from the diameters of the other openings.

[0009] A detection device of one embodiment of the present invention has a plurality of photodiodes provided on the substrate and arranged in a first direction, a plurality of lenses overlapping each of the photodiodes, and a light-shielding layer having a plurality of openings provided between the photodiodes and the lenses, wherein the plurality of openings and the plurality of lenses are provided in an area overlapping one of the photodiodes, and the number of the plurality of openings is different from the number of the plurality of lenses. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a plan view showing a detection device and a display device according to the first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II' of FIG. [Diagram 3] FIG. 3 is a block diagram illustrating an example of the configuration of the detection device according to the embodiment. [Figure 4] FIG. 4 is a circuit diagram showing a detection element. [Diagram 5] FIG. 5 is a plan view showing the optical filter according to the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view showing an optical filter. [Figure 7] FIG. 7 is an explanatory diagram for explaining the travel of light when the light is incident on the optical filter in an oblique direction. [Figure 8] FIG. 8 is a plan view that illustrates a schematic diagram of a photodiode of a detection element. [Figure 9] FIG. 9 is a plan view showing an optical filter according to a first modified example. [Figure 10] FIG. 10 is a plan view showing an optical filter according to a second modified example. [Figure 11] FIG. 11 is a plan view showing an optical filter included in the detection device according to the second embodiment. [Figure 12] FIG. 12 is a plan view showing an optical filter included in the detection device according to the third embodiment. [Figure 13] FIG. 13 is a plan view illustrating a photodiode according to the fourth embodiment. [Figure 14] FIG. 14 is a cross-sectional view showing a schematic cross-sectional configuration of a partial photodiode. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present disclosure is not limited by the contents described in the following embodiments. The components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the components described below can be appropriately combined. Note that the disclosure is merely an example, and those that a person skilled in the art can easily imagine appropriate modifications while maintaining the gist of the present disclosure are naturally included in the scope of the present disclosure. In addition, in order to make the explanation clearer, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are merely examples and do not limit the interpretation of the present disclosure. In addition, in this disclosure and each figure, elements similar to those described above with respect to the previously mentioned figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0012] In this specification and the claims, when expressing an aspect of arranging another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is arranged directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is arranged above a certain structure via yet another structure.

[0013] (First embodiment) Fig. 1 is a plan view showing a detection device and a display device according to a first embodiment. Fig. 2 is a cross-sectional view taken along line II-II' in Fig. 1. In Fig. 1, the display device 100 is indicated by a two-dot chain line in order to make the drawing easier to see.

[0014] As shown in FIGS. 1 and 2, the detection device 1 according to the first embodiment is disposed below the display device 100 (the side opposite to the cover member 122 shown in FIG. 2). The display device 100 is an organic EL display panel (OLED: Organic Light Emitting Diode). As shown in FIG. 1, the display device 100 has a plurality of sub-pixels SPX. The sub-pixels SPX are arranged in a matrix in a display region. The display region of the display device 100 is provided so as to overlap with the detection region AA of the detection device 1. In FIG. 1, the entire display region of the display device 100 overlaps with the detection region AA of the detection device 1. However, the detection region AA of the detection device 1 may be provided so as to overlap with a portion of the display region of the display device 100.

[0015] The subpixels SPX(R), SPX(G), and SPX(B) are repeatedly arranged in this order in the first direction Dx. The subpixels SPX(R), SPX(G), and SPX(B) are arranged side by side in the second direction Dy. The subpixel SPX(R) displays, for example, red (R). The subpixel SPX(G) displays, for example, green (G). The subpixel SPX(B) displays, for example, blue (B). The subpixels SPX are not limited to three colors, and may be configured to display four or more colors.

[0016] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21 of the detection device 1. The second direction Dy is a direction in a plane parallel to the substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular thereto. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction to the substrate 21. In addition, "planar view" refers to the positional relationship when viewed from the third direction Dz.

[0017] The display device 100 is not limited to an organic EL display panel. The display device 100 may be, for example, an inorganic EL display panel (micro LED, mini LED), a liquid crystal display panel (LCD: Liquid Crystal Display) using liquid crystal elements as display elements, or an electrophoretic display panel (EPD: Electrophoretic Display) using electrophoretic elements as display elements.

[0018] As shown in FIG. 1, the detection device 1 includes an array substrate 2 (substrate 21), a sensor unit 10, a scanning line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 102, and a power supply circuit 103.

[0019] The control board 101 is electrically connected to the board 21 via the wiring board 110. The wiring board 110 is, for example, a flexible printed circuit board or a rigid board. The wiring board 110 is provided with a detection circuit 48. The control board 101 is provided with a control circuit 102 and a power supply circuit 103. The control circuit 102 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 102 supplies control signals to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16 to control the operation of the sensor unit 10. The power supply circuit 103 supplies voltage signals such as a power supply potential VDD and a reference potential VCOM (see FIG. 4) to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16. In the present embodiment, the case where the detection circuit 48 is disposed on the wiring board 110 is illustrated, but is not limited to this. The detection circuit 48 may be disposed on the board 21.

[0020] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA and the peripheral area GA extend in a plane direction parallel to the substrate 21. Within the detection area AA, each element (detection element 3) of the sensor unit 10 is provided. The peripheral area GA is an area outside the detection area AA, and is an area where each element (detection element 3) is not provided. In other words, the peripheral area GA is an area between the outer periphery of the detection area AA and the end of the substrate 21. Within the peripheral area GA, a scanning line driving circuit 15 and a signal line selection circuit 16 are provided. The scanning line driving circuit 15 is provided in an area of ​​the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in an area of ​​the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0021] Each of the detection elements 3 of the sensor unit 10 is an optical sensor having a photodiode 30 as a sensor element. The photodiode 30 is a photoelectric conversion element, and outputs an electrical signal according to the light irradiated thereon. More specifically, the photodiode 30 is a PIN (Positive Intrinsic Negative) photodiode. Alternatively, the photodiode 30 may be an OPD (Organic Photo Diode).

[0022] The detection elements 3 (photodiodes 30) are arranged in a matrix in the detection area AA. More specifically, the arrangement direction Dpd of the multiple photodiodes 30 is arranged parallel to the arrangement direction Dpx of the multiple sub-pixels SPX. In FIG. 1, the arrangement direction Dpd and the arrangement direction Dpx are both parallel to the first direction Dx. An arrangement pitch P1 of the multiple photodiodes 30 in the first direction Dx is different from an arrangement pitch P2 of the multiple sub-pixels SPX in the first direction Dx. For example, the arrangement pitch P1 is smaller than the arrangement pitch P2.

[0023] In the second direction Dy, the arrangement direction of the multiple photodiodes 30 is also parallel to the arrangement direction of the multiple subpixels SPX and is also parallel to the second direction Dy. The arrangement pitch of the multiple photodiodes 30 in the second direction Dy is different from the arrangement pitch of the multiple subpixels SPX in the second direction Dy. The arrangement pitch of the multiple photodiodes 30 in the second direction Dy is smaller than the arrangement pitch of the multiple subpixels SPX in the second direction Dy.

[0024] The photodiodes 30 of the multiple detection elements 3 perform detection in accordance with gate drive signals (e.g., a reset control signal RST and a read control signal RD) supplied from the scanning line drive circuit 15. The multiple photodiodes 30 output electrical signals corresponding to the light irradiated thereon as detection signals Vdet to the signal line selection circuit 16. The detection device 1 detects information related to the living body based on the detection signals Vdet from the multiple photodiodes 30.

[0025] As shown in Fig. 2, the display device 100 and the cover member 122 are stacked in this order on the detection device 1. The detection device 1 has an array substrate 2, a plurality of photodiodes 30, and an optical filter 7. Note that Fig. 2 shows a schematic stacked configuration of the array substrate 2, the photodiodes 30, and the optical filter 7. Also, adhesive layers (not shown) are provided between the detection device 1 (optical filter 7) and the display device 100, and between the display device 100 and the cover member 122.

[0026] The cover member 122 is a member for protecting the display device 100 and the detection device 1, and covers the display device 100 and the detection device 1. The cover member 122 is, for example, a glass substrate. Note that the cover member 122 is not limited to a glass substrate, and may be a resin substrate or the like. Also, the cover member 122 may not be provided.

[0027] A part of the light L (display light) emitted from the display device 100 passes through the cover member 122 and is reflected by the finger Fg that is the detection target. The light L reflected by the finger Fg passes through the light-transmitting region 100a of the display device 100 and enters the detection device 1. The light-transmitting region 100a is a region that does not overlap with elements such as light-emitting elements and transistors, and various wirings of the display device 100, and is also called an opening region. The arrangement direction and arrangement pitch P2a of the light-transmitting regions 100a differ depending on the light-emitting elements and circuit configuration of the display device 100, but are formed overall in accordance with the arrangement direction Dpx and arrangement pitch P2 of the multiple sub-pixels SPX shown in FIG. 1.

[0028] The detection device 1 detects the light L reflected by the finger Fg to detect unevenness (e.g., a fingerprint) on the surface of the finger Fg. Furthermore, in addition to detecting fingerprints, the detection device 1 may detect information about a living body by detecting the light L reflected inside the finger Fg. The information about a living body may be, for example, an image of blood vessels such as veins, a pulse rate, a pulse wave, etc.

[0029] The optical filter 7 is provided on the multiple photodiodes 30. The optical filter 7 is an optical element that transmits a component of the light L reflected by a detection object such as a finger Fg traveling in the third direction Dz toward the photodiode 30 and blocks a component traveling in an oblique direction. The optical filter 7 is also called a collimating aperture or a collimator.

[0030] The optical filter 7 is provided across the detection area AA and the peripheral area GA. The optical filter 7 has a first light-shielding layer 71, a second light-shielding layer 72, a first light-transmitting resin layer 74, a second light-transmitting resin layer 75, and a lens 78. In this embodiment, the first light-shielding layer 71, the first light-transmitting resin layer 74, the second light-shielding layer 72, the second light-transmitting resin layer 75, and the lens 78 are laminated in this order on the array substrate 2 and the multiple photodiodes 30. The multiple lenses 78 are provided in the detection area AA and overlap the multiple photodiodes 30, respectively. The light L reflected by the detection object such as a finger Fg is collected by each of the multiple lenses 78 and irradiated to the multiple photodiodes 30 corresponding to each of the multiple lenses 78.

[0031] The detailed configuration of the array substrate 2, the photodiode 30, and the optical filter 7 having the lens 78 will be described later.

[0032] Fig. 3 is a block diagram showing a configuration example of a detection device according to an embodiment. As shown in Fig. 3, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. A part or all of the functions of the detection control circuit 11 are included in a control circuit 102. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102.

[0033] The detection control circuit 11 is a circuit that supplies control signals to the scanning line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the scanning line driving circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16.

[0034] The scanning line driving circuit 15 is a circuit that drives a plurality of scanning lines (readout control scanning line GLrd, reset control scanning line GLrst (see FIG. 4)) based on various control signals. The scanning line driving circuit 15 sequentially or simultaneously selects a plurality of scanning lines, and supplies gate driving signals (e.g., reset control signal RST, readout control signal RD) to the selected scanning lines. In this way, the scanning line driving circuit 15 selects a plurality of photodiodes 30 connected to the scanning lines.

[0035] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of output signal lines SL (see FIG. 4). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected output signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs the detection signal Vdet of the photodiode 30 to the detection unit 40.

[0036] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. Based on a control signal supplied from the detection control circuit 11, the detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 so that they operate in synchronization with each other.

[0037] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 is a circuit that amplifies the detection signal Vdet, and is, for example, an integration circuit. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0038] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on an output signal from the detection circuit 48. When the finger Fg is in contact with or close to the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger Fg or the palm based on a signal from the detection circuit 48. The signal processing circuit 44 may also detect information about the living body based on the signal from the detection circuit 48. The information about the living body is, for example, a blood vessel image of the finger Fg or the palm, a pulse wave, a pulse rate, blood oxygen saturation, etc.

[0039] The memory circuit 46 temporarily stores the signal calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0040] The coordinate extraction circuit 45 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger Fg, etc., when the contact or proximity of the finger Fg is detected in the signal processing circuit 44. The coordinate extraction circuit 45 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger Fg or the palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each detection element 3 of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger Fg, etc. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0041] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 4 is a circuit diagram showing a detection element. As shown in Fig. 4, the detection element 3 has a photodiode 30, a reset transistor Mrst, a readout transistor Mrd, and a source follower transistor Msf. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are provided corresponding to one photodiode 30. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are each composed of an n-type TFT (Thin Film Transistor). However, this is not limited thereto, and each transistor may be composed of a p-type TFT.

[0042] A reference potential VCOM is applied to the anode of the photodiode 30. The cathode of the photodiode 30 is connected to a node N1. The node N1 is connected to a capacitance element Cs, one of the source or drain of the reset transistor Mrst, and the gate of the source follower transistor Msf. Furthermore, a parasitic capacitance Cp exists at the node N1. When light is incident on the photodiode 30, a signal (charge) output from the photodiode 30 is accumulated in the capacitance element Cs. Here, the capacitance element Cs is, for example, a capacitance formed between an upper electrode 34 and a lower electrode 35 (see FIG. 8) connected to the photodiode 30. The parasitic capacitance Cp is a capacitance added to the capacitance element Cs, and is a capacitance formed between various wirings and electrodes provided on the array substrate 2.

[0043] The gate of the reset transistor Mrst is connected to a reset control scanning line GLrst. The other of the source or drain of the reset transistor Mrst is supplied with a reset potential Vrst. When the reset transistor Mrst is turned on (conductive state) in response to a reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photodiode 30 is reverse-bias driven.

[0044] The source follower transistor Msf is connected between a terminal to which a power supply potential VDD is supplied and the readout transistor Mrd (node ​​N2). The gate of the source follower transistor Msf is connected to the node N1. A signal (charge) generated in the photodiode 30 is supplied to the gate of the source follower transistor Msf. As a result, the source follower transistor Msf outputs a voltage signal corresponding to the signal (charge) generated in the photodiode 30 to the readout transistor Mrd.

[0045] The read transistor Mrd is connected between the source of the source follower transistor Msf (node ​​N2) and the output signal line SL (node ​​N3). The gate of the read transistor Mrd is connected to the read control scanning line GLrd. When the read transistor Mrd is turned on in response to the read control signal RD, the signal output from the source follower transistor Msf, i.e., a voltage signal corresponding to the signal (charge) generated in the photodiode 30, is output to the output signal line SL as the detection signal Vdet.

[0046] In the example shown in FIG. 4, the reset transistor Mrst and the readout transistor Mrd each have a so-called double-gate structure in which two transistors are connected in series. However, without being limited thereto, the reset transistor Mrst and the readout transistor Mrd may have a single-gate structure or a multi-gate structure in which three or more transistors are connected in series. Furthermore, the circuit of one detection element 3 is not limited to a configuration having three transistors, namely, the reset transistor Mrst, the source follower transistor Msf, and the readout transistor Mrd. The detection element 3 may have two or four or more transistors.

[0047] Next, a detailed configuration of the detection element 3 and the optical filter 7 will be described. Fig. 5 is a plan view showing the optical filter according to the first embodiment.

[0048] As shown in FIG. 5, the optical filter 7 is provided to cover a plurality of detection elements 3 (photodiodes 30) arranged in a matrix. The optical filter 7 has a first light-transmitting resin layer 74 (see FIG. 6) and a second light-transmitting resin layer 75 that cover the plurality of photodiodes 30, and a plurality of lenses 78 provided on each of the plurality of detection elements 3. In one detection element 3, a plurality of lenses 78 are arranged to overlap one photodiode 30. In the example shown in FIG. 5, eight lenses 78, 78-1, 78-2, . . . , 78-8, are arranged to overlap one photodiode 30. The plurality of lenses 78-1, 78-2, . . . , 78-8 are arranged in a triangular lattice pattern. However, the number of the plurality of lenses 78 arranged on one detection element 3 may be seven or less, or nine or more.

[0049] 5 is formed in the first light-shielding layer 71 (see FIG. 6) and is formed so that, of the light L reflected by a detected object such as a finger Fg, the light L having a component in the third direction Dz is incident on the photodiode 30. The first opening OP1 is formed so as to overlap each of the multiple lenses 78. The multiple lenses 78 and multiple first openings OP1 are arranged so as to overlap one photodiode 30.

[0050] 5, in a plan view, in a region overlapping one photodiode 30, the arrangement direction D1 of the lenses 78 and the first openings OP1 is inclined with respect to the first direction Dx (arrangement direction Dpd of the photodiodes 30). More specifically, the arrangement direction D1 of the lenses 78-1, 78-2, 78-3 and the first openings OP1 overlapping therewith is inclined at an angle θop with respect to the arrangement direction Dpd (first direction Dx) of the photodiodes 30. The arrangement direction D1 is also inclined with respect to the second direction Dy at a predetermined angle. The arrangement direction D1 is a direction connecting the centers of at least two adjacent first openings OP1.

[0051] The lenses 78-4, 78-5 and the multiple first openings OP1 overlapping them are arranged in a direction parallel to the arrangement direction D1, and are arranged adjacent to the lenses 78-1, 78-2, 78-3 and the multiple first openings OP1 overlapping them. The lenses 78-6, 78-7, 78-8 and the multiple first openings OP1 overlapping them are arranged in a direction parallel to the arrangement direction D1, and are arranged adjacent to the lenses 78-4, 78-5 and the multiple first openings OP1 overlapping them.

[0052] In FIG. 5, the arrangement direction D1 is exemplified by the direction in which the lenses 78-1, 78-2, and 78-3 and the multiple first openings OP1 overlapping them are arranged. However, the present invention is not limited to this, and the arrangement direction D1 may be a direction connecting the centers of any two adjacent lenses 78 and the two first openings OP overlapping them in a region overlapping one photodiode 30. For example, when focusing on the lens 78-4, the arrangement direction D1 may be a direction connecting the centers of the two adjacent lenses 78-4 and 78-5 and the two first openings OP overlapping them in a region overlapping one photodiode 30. Also, the arrangement direction D1 may be a direction connecting the centers of the three adjacent lenses 78-1, 78-4, and 78-7 and the three first openings OP overlapping them. Also, the arrangement direction D1 may be a direction connecting the centers of the three adjacent lenses 78-2, 78-4, and 78-6 and the three first openings OP overlapping them. In this embodiment, all of the arrangement directions D1 are inclined with respect to the first direction Dx.

[0053] 5, the lenses 78 and the first openings OP1 are formed with the same shape (diameter) in a region overlapping one photodiode 30. The lenses 78 and the first openings OP1 are formed with the same arrangement pattern in a plurality of detection elements 3 (photodiodes 30). In other words, when two photodiodes 30 adjacent to each other in the first direction Dx are a first photodiode and a second photodiode, the arrangement direction D1 of the first openings OP1 in the region overlapping the first photodiode is parallel to the arrangement direction D1 of the first openings OP1 in the region overlapping the second photodiode.

[0054] With this configuration, the multiple lenses 78 and the multiple first openings OP1 of the optical filter 7 are irregularly arranged in the first direction Dx (i.e., the arrangement direction Dpd of the photodiodes 30). In other words, it is possible to suppress the occurrence of a bias between a region where the multiple lenses 78 and the multiple first openings OP1 of the optical filter 7 are formed and a region where the multiple lenses 78 and the multiple first openings OP1 of the optical filter 7 are not formed in the arrangement direction Dpd of the photodiodes 30.

[0055] As described above, the arrangement direction Dpd of the multiple photodiodes 30 of the detection device 1 is arranged in a direction parallel to the arrangement direction Dpx of the multiple subpixels SPX of the display device 100, and the arrangement pitch P1 of the multiple photodiodes 30 is different from the arrangement pitch P2 of the multiple subpixels SPX (see FIG. 1). As a result, even if a periodic regularity occurs in the arrangement relationship between the multiple photodiodes 30 and the multiple subpixels SPX, the multiple lenses 78 and the multiple first openings OP1 of the optical filter 7 are irregularly arranged in the arrangement direction Dpd of the photodiodes 30, so that it is possible to suppress the occurrence of moire (unintended patterns, for example, streaky light distribution) in the light that passes through the optical filter 7 and enters the multiple photodiodes 30.

[0056] Fig. 6 is a cross-sectional view showing an optical filter. Fig. 6 is a cross-sectional view taken along line VI-VI' in Fig. 5. Note that Fig. 6 shows a simplified configuration of the array substrate 2, and diagrammatically shows the photodiode 30 and the protective film 29 (organic protective film) covering the photodiode 30.

[0057] 6, the optical filter 7 has a first light-shielding layer 71, a second light-shielding layer 72, a filter layer 73, a first light-transmitting resin layer 74, a second light-transmitting resin layer 75, and a lens 78. In this embodiment, the first light-shielding layer 71, the filter layer 73, the first light-transmitting resin layer 74, the second light-shielding layer 72, the second light-transmitting resin layer 75, and the lens 78 are laminated in this order on the protective film 29.

[0058] FIG. 6 shows an enlarged view of a region where one lens 78 is provided. However, as described above, a plurality of lenses 78, a first opening OP1, and a second opening OP2 are provided in a region overlapping one photodiode 30. The lens 78 is a convex lens. The optical axis CL of the lens 78 is provided in a direction parallel to the third direction Dz and intersects with the photodiode 30. The lens 78 is provided on and in direct contact with the second light-transmitting resin layer 75. In this embodiment, no light-shielding layer or the like is provided on the second light-transmitting resin layer 75 between adjacent lenses 78.

[0059] The first light-shielding layer 71 is provided directly on and in contact with the protective film 29 of the array substrate 2. In other words, the first light-shielding layer 71 is provided between the photodiode 30 and the lens 78 in the third direction Dz. Furthermore, the first light-shielding layer 71 has a first opening OP1 in a region overlapping with the photodiode 30. The first opening OP1 is formed in a region overlapping with the optical axis CL.

[0060] The first light-shielding layer 71 is provided directly on and in contact with the protective film 29 of the array substrate 2. The first light-shielding layer 71 is formed of a metal material such as molybdenum (Mo). This allows the first light-shielding layer 71 to reflect components of the light L2 traveling in an oblique direction other than the light L2 passing through the first opening OP1. In addition, since the first light-shielding layer 71 is formed of a metal material, the width W1 (diameter) of the first opening OP1 in the first direction Dx can be formed with high precision. Therefore, even if the arrangement pitch or area of ​​the photodiodes 30 is small, the first opening OP1 can be provided in correspondence with the photodiodes 30.

[0061] The first light-shielding layer 71 is formed by processing a metal material deposited by sputtering or the like on the protective film 29 of the array substrate 2 to form a first opening OP1, and is different from a so-called external optical filter attached to the protective film 29 of the array substrate 2. However, without being limited thereto, the optical filter 7 may be provided as an external optical filter and attached to the array substrate 2 via an adhesive layer (not shown). The arrangement direction D1 of the multiple first openings OP1 is inclined with respect to the first direction Dx, so that even if a positional shift occurs when attaching the optical filter 7, the irregular arrangement of the multiple first openings OP1 is maintained.

[0062] Furthermore, since the first light-shielding layer 71 is made of a metal material, unlike the second light-shielding layer 72 which is made of a resin material described later, it can be formed thinner than the second light-shielding layer 72, and a first opening OP1 smaller than a second opening OP2 formed in the second light-shielding layer 72 can be formed. The thickness of the first light-shielding layer 71 is one-tenth or less of the thickness of the second light-shielding layer 72. As an example, the thickness of the first light-shielding layer 71 is 0.055 μm or more, for example, 0.065 μm, and the thickness of the second light-shielding layer is, for example, 1 μm. The first light-shielding layer 71 is formed to be extremely thin compared to the thickness of the second light-shielding layer 72.

[0063] The filter layer 73 is provided directly on and in contact with the first light-shielding layer 71. In other words, the filter layer 73 is provided between the first light-shielding layer 71 and the first light-transmitting resin layer 74 in the third direction Dz. The filter layer 73 is a filter that blocks light of a predetermined wavelength band. The filter layer 73 is formed of, for example, a resin material colored green, and is an IR cut filter that blocks infrared rays. Thereby, the optical filter 7 can improve the detection sensitivity by allowing components of the light L2, for example, in a wavelength band required for fingerprint detection, to enter the photodiode 30.

[0064] The first light-transmitting resin layer 74 is provided directly on and in contact with the filter layer 73. In other words, the first light-transmitting resin layer 74 is provided between the first light-shielding layer 71 and the second light-shielding layer 72 in the third direction Dz. The first light-transmitting resin layer 74 and the second light-transmitting resin layer 75 are formed of, for example, a light-transmitting acrylic resin.

[0065] The second light-shielding layer 72 is provided directly on and in contact with the first light-transmitting resin layer 74. In other words, the second light-shielding layer 72 is provided between the first light-shielding layer 71 and the lens 78 in the third direction Dz. Furthermore, the second light-shielding layer 72 is provided with a second opening OP2 in a region overlapping the photodiode 30 and the first opening OP1. The second opening OP2 is formed in a region overlapping with the optical axis CL. More preferably, the center of the second opening OP2 and the center of the first opening OP1 are provided to overlap with the optical axis CL.

[0066] The second light-shielding layer 72 is formed of, for example, a resin material colored black. As a result, the second light-shielding layer 72 functions as a light absorbing layer that absorbs components of the light L2 traveling in an oblique direction other than the light L2 that transmits through the second opening OP2. In addition, the second light-shielding layer 72 absorbs light reflected by the first light-shielding layer 71. As a result, compared to a configuration in which the second light-shielding layer 72 is formed of a metal material, it is possible to suppress the light reflected by the first light-shielding layer 71 from traveling through the first light-transmitting resin layer 74 as stray light and entering other photodiodes 30. In addition, the second light-shielding layer 72 can absorb external light that enters between the adjacent lenses 78. As a result, compared to a configuration in which the second light-shielding layer 72 is formed of a metal material, it is possible to suppress the reflected light at the second light-shielding layer 72. However, the second light-shielding layer 72 is not limited to an example in which it is formed of a resin material colored black, and may be formed of a metal material whose surface is blackened.

[0067] The second light-transmitting resin layer 75 is provided directly on and in contact with the second light-shielding layer 72. In other words, the second light-transmitting resin layer 75 is provided between the second light-shielding layer 72 and the lens 78.

[0068] The second light-transmitting resin layer 75 is made of the same material as the first light-transmitting resin layer 74, and the refractive index of the second light-transmitting resin layer 75 is substantially equal to the refractive index of the first light-transmitting resin layer 74. This makes it possible to suppress reflection of the light L2 at the interface between the first light-transmitting resin layer 74 and the second light-transmitting resin layer 75 at the second opening OP2. However, without being limited thereto, the first light-transmitting resin layer 74 and the second light-transmitting resin layer 75 may be formed of different materials, and the refractive index of the first light-transmitting resin layer 74 and the refractive index of the second light-transmitting resin layer 75 may be different.

[0069] In this embodiment, the width W3 (diameter) of the lens 78 in the first direction Dx, the width W2 (diameter) of the second opening OP2 in the first direction Dx, and the width W1 (diameter) of the first opening OP1 in the first direction Dx are smaller in this order. The width W1 is 2 μm or more and 10 μm or less, for example, about 3.5 μm. The width W2 is 3 μm or more and 20 μm or less, for example, about 10.0 μm. The width W3 is 10 μm or more and 50 μm or less, for example, about 21.9 μm.

[0070] Also, the thickness t2 of the second light-transmitting resin layer 75 shown in FIG. 6 is formed to be approximately the same as the thickness t1 of the first light-transmitting resin layer 74, or to be thinner or thicker than the thickness t1 of the first light-transmitting resin layer 74. The thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75 are formed to be thicker than the thickness t4 of the filter layer 73. Also, the thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75 are thicker than the thickness t3 of the protective film 29 of the array substrate 2. The thicknesses t1 and t2 are 3 μm or more and 30 μm or less, for example, the thickness t1 is about 18 μm. The thickness t2 is, for example, about 16.5 μm. The thickness t3 is 1 μm or more and 10 μm or less, for example, 4.5 μm or more. Also, the thickness t4 of the filter layer 73, as an example, is 1 μm or more and 5 μm or less, for example, 1.35 μm.

[0071] With this configuration, of the light L reflected by a detectable object such as a finger Fg, the light L2-1 traveling in the third direction Dz is collected by the lens 78, passes through the second opening OP2 and the first opening OP1, and is incident on the photodiode 30. In addition, the light L2-2 inclined by an angle θ1 with respect to the third direction Dz also passes through the second opening OP2 and the first opening OP1, and is incident on the photodiode 30.

[0072] The film thickness of each layer of the optical filter 7, the width W1 of the first opening OP1, and the width W2 of the second opening OP2 can be changed as appropriate in accordance with the characteristics required of the optical filter 7.

[0073] Fig. 7 is an explanatory diagram for typically explaining the travel of light when light is incident on the optical filter in an oblique direction. Fig. 7 typically shows the cross-sectional structures of two adjacent lenses 78-1, 78-6, and the lenses 78-1, 78-6 are provided at positions overlapping with the photodiodes 30. Fig. 7 also shows a case where light L2 traveling in a direction oblique to the third direction Dz is incident on the optical filter 7. In the example shown in Fig. 7, the angle θ2 between the light L2 and the third direction Dz is 65°.

[0074] 7, light L2 incident on lenses 78-1 and 78-6 in an oblique direction is collected as light L2-3 and L2-5, respectively, and is blocked by the second light-shielding layer 72. Light L2 incident on the second light-transmitting resin layer 75 between adjacent lenses 78 is refracted at the upper surface of the second light-transmitting resin layer 75 and travels through the second light-transmitting resin layer 75 as light L2-4. A part of the light L2-4 is blocked by the second light-shielding layer 72. A component of the light L2-4 transmitted through the second opening OP2 is blocked by the first light-shielding layer 71.

[0075] In this way, by providing the first light-shielding layer 71 and the second light-shielding layer 72, the optical filter 7 can effectively block light L2 incident from an oblique direction, and suppress the occurrence of so-called crosstalk, compared to a case in which the optical filter 7 is formed of only one light-shielding layer (for example, in FIG. 7, a case in which the second light-shielding layer 72 is not provided and the optical filter 7 is formed of only the first light-shielding layer 71).

[0076] Even when the first light-shielding layer 71 and the second light-shielding layer 72 are provided, the light L2 incident in a direction parallel to the third direction Dz can be efficiently incident on the photodiode 30 by suppressing the light from being blocked by the first light-shielding layer 71 and the second light-shielding layer 72. As described above, the detection device 1 can improve detection accuracy by suppressing the occurrence of crosstalk.

[0077] Moreover, the optical filter 7 is formed integrally with the array substrate 2. That is, the first light-shielding layer 71 of the optical filter 7 is provided directly on and in contact with the protective film 29, and no member such as an adhesive layer is provided between the first light-shielding layer 71 and the protective film 29. The optical filter 7 is formed by directly depositing a film on the array substrate 2 and performing a process such as patterning, so that the positional accuracy of the first opening OP1, the second opening OP2, and the lens 78 of the optical filter 7 and the photodiode 30 can be improved compared to the case where the optical filter 7 is separately attached to the array substrate 2. However, the present invention is not limited to this, and the optical filter 7 may be a so-called external optical filter attached to the protective film 29 of the array substrate 2 via an adhesive layer.

[0078] Furthermore, the optical filter 7 is not limited to a configuration having the first light-shielding layer 71 and the second light-shielding layer 72, and may be formed of a single light-shielding layer. The filter layer 73 is provided between the first light-shielding layer 71 and the first light-transmitting resin layer 74, but the position of the filter layer 73 is not limited to this. The position of the filter layer 73 can be changed as appropriate depending on the characteristics and manufacturing process required for the optical filter 7.

[0079] Next, the planar configuration of the photodiode 30 will be described. Fig. 8 is a plan view that typically shows the photodiode of the detection element. As shown in Fig. 8, the photodiode 30 is provided in an area surrounded by two reset control scanning lines GLrst adjacent to each other in the second direction Dy and two output signal lines SL adjacent to each other in the first direction Dx. In this embodiment, one detection element 3 is defined by an area surrounded by two scanning lines (e.g., reset control scanning lines GLrst) adjacent to each other in the second direction Dy and two signal lines (e.g., output signal lines SL) adjacent to each other in the first direction Dx.

[0080] The reset control scanning line GLrst extends in a first direction Dx. The output signal line SL extends in a second direction Dy, intersecting with the reset control scanning line GLrst. In other words, in a region overlapping one photodiode 30, the arrangement direction D1 (see FIG. 5) of the lenses 78 and the first apertures OP1 is inclined with respect to the extension direction of a scanning line (e.g., the reset control scanning line GLrst).

[0081] The photodiode 30 is formed so as to cover most of the area of ​​the detection element 3. The photodiode 30 is also provided so as to cover circuit elements (not shown in FIG. 8) of the detection element 3, such as the reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf (see FIG. 4).

[0082] The upper electrode 34 and the lower electrode 35 face each other in the third direction Dz, sandwiching the photodiode 30. Specifically, the photodiode 30 is disposed via the lower electrode 35 on the array substrate 2 on which various wirings and various transistors are provided.

[0083] The lower electrode 35 is electrically connected to the reset transistor Mrst and the source follower transistor Msf through a contact hole H2 in a portion not overlapping with the photodiode 30 and the upper electrode 34. The upper electrode 34 is electrically connected to the photodiode 30 through a contact hole H1. The contact hole H1 provided in the insulating film 27 (see FIG. 14) is provided so as to overlap most of the region of the upper electrode 34, and the insulating film 27 overlaps with the upper electrode 34 at the periphery of the upper electrode 34. The upper electrode 34 is connected to a reference potential supply wiring SLcom (not shown in FIG. 8) through a connection wiring 34a. The reference potential supply wiring SLcom is a wiring that supplies a reference potential VCOM to the photodiode 30, and is provided, for example, so as to overlap with the output signal line SL and extend in the second direction Dy.

[0084] It should be noted that the configuration of the photodiode 30 is merely an example, and the shape, area, and the like can be appropriately changed depending on the characteristics required for the detection device 1.

[0085] As described above, the detection device 1 of this embodiment includes the substrate 21, a plurality of photodiodes 30 provided on the substrate 21 and arranged in the first direction Dx, a plurality of lenses 78 provided overlapping the plurality of photodiodes 30, respectively, and a first light-shielding layer 71 provided between the plurality of photodiodes 30 and the plurality of lenses 78 and having a plurality of first openings OP1. The plurality of first openings OP1 are provided in a region overlapping one photodiode 30, and the arrangement direction D1 of the plurality of first openings OP1 in the region overlapping one photodiode 30 is inclined with respect to the first direction Dx.

[0086] According to this configuration, the multiple lenses 78 and the multiple first openings OP1 of the optical filter 7 are irregularly arranged in the arrangement direction Dpd of the photodiodes 30. Therefore, even if a periodic regularity occurs in the arrangement relationship between the multiple photodiodes 30 and the multiple sub-pixels SPX of the display device 100 provided on the detection device 1, the detection device 1 can suppress the occurrence of moire (unintended patterns, for example, streaky light distribution) in the light that passes through the optical filter 7 and enters the multiple photodiodes 30.

[0087] (First Modification) 9 is a plan view showing an optical filter according to a first modified example. In the above-described first embodiment, the plurality of lenses 78 and the plurality of first openings OP1 are formed in the same arrangement pattern for the plurality of detection elements 3 (photodiodes 30). However, this is not limited thereto, and the plurality of lenses 78 and the plurality of first openings OP1 may be formed in different arrangement patterns for the plurality of detection elements 3.

[0088] 9, for ease of understanding, a total of four detection elements 3 in two rows and two columns will be described. Also, the photodiodes 30 of each detection element 3 will be represented as a first photodiode 30-1, a second photodiode 30-2, a third photodiode 30-3, and a fourth photodiode 30-4, respectively. However, in the following description, when it is not necessary to distinguish between the first photodiode 30-1, the second photodiode 30-2, the third photodiode 30-3, and the fourth photodiode 30-4, they will be simply referred to as photodiodes 30.

[0089] 9, in an optical filter 7A of a detection device 1A according to a first modification, a first photodiode 30-1 is adjacent to a second photodiode 30-2 in the first direction Dx. A third photodiode 30-3 is adjacent to a first photodiode 30-1 in the second direction Dy. A fourth photodiode 30-4 is adjacent to a third photodiode 30-3 in the first direction Dx.

[0090] The arrangement patterns of the lenses 78 and the first openings OP1 of the photodiode 30, which are provided to overlap each other, are rotated by 90° with respect to each other. More specifically, the arrangement direction D1-1 of the lenses 78 and the first openings OP1 in the region overlapping the first photodiode 30-1 intersects (is perpendicular to) the arrangement direction D1-2 of the lenses 78 and the first openings OP1 in the region overlapping the second photodiode 30-2. The angle θop2 between the arrangement direction D1-2 and the first direction Dx in the region overlapping the second photodiode 30-2 is θop2=θop1+90° with respect to the angle θop1 between the arrangement direction D1-1 and the first direction Dx in the region overlapping the first photodiode 30-1.

[0091] Similarly, the arrangement direction D1-4 of the lenses 78 and the first openings OP1 in the region overlapping the fourth photodiode 30-4 intersects (is perpendicular to) the arrangement direction D1-2 of the lenses 78 and the first openings OP1 in the region overlapping the second photodiode 30-2. Also, the arrangement direction D1-3 of the lenses 78 and the first openings OP1 in the region overlapping the third photodiode 30-3 intersects (is perpendicular to) the arrangement direction D1-4 of the lenses 78 and the first openings OP1 in the region overlapping the fourth photodiode 30-4.

[0092] The arrangement patterns of the lenses 78 and the first apertures OP1 are rotated by 90° in a clockwise order (the first photodiode 30-1, the second photodiode 30-2, the fourth photodiode 30-4, and the third photodiode 30-3) with respect to the center of the four detection elements 3. That is, the angles θop1, θop2, θop4, and θop3 of the arrangement directions D1-1, D1-2, D1-4, and D1-3 are provided so as to rotate by 90° in sequence.

[0093] FIG. 9 shows four detection elements 3 (photodiodes 30), and in the detection area AA, the four detection elements 3 (photodiodes 30) are arranged in a matrix, with a combination of four detection elements 3 (photodiodes 30) constituting one unit.

[0094] With this configuration, in the first modified example, the lenses 78 and the first openings OP1 of the optical filter 7A are irregularly arranged in the adjacent detection elements 3 (photodiodes 30). That is, compared to the first embodiment, the irregularity of the arrangement pattern of the lenses 78 and the first openings OP1 of the optical filter 7A can be increased over a wider area. Therefore, the detection device 1A of the first modified example can suppress the occurrence of moire in the light that passes through the optical filter 7A and enters the photodiodes 30.

[0095] (Second Modification) 10 is a plan view showing an optical filter according to a second modified example. In the above-mentioned first embodiment and first modified example, seven lenses 78 and first apertures OP1 are provided so as to overlap one detection element 3 (photodiode 30). However, this is not limited thereto, and the number of the lenses 78 and the number of the first apertures OP1 may be six or less, or eight or more.

[0096] 10, in an optical filter 7B of a detection device 1B according to a second modification, three lenses 78 and three first apertures OP1 overlapping the three lenses 78 are provided in a region overlapping one photodiode 30. The three lenses 78 and the three first apertures OP1 are disposed at the vertices of a triangle.

[0097] In this modification, the arrangement direction D1 of the lenses 78 and the first openings OP1 is also inclined with respect to the first direction Dx (arrangement direction Dpd of the photodiodes 30). More specifically, in the region overlapping the first photodiode 30-1, the arrangement direction D1-1 of the two adjacent lenses 78-1, 78-2 and the two first openings OP1 overlapping them is inclined at an angle θop1 with respect to the first direction Dx. The arrangement direction D1 (not shown) of the two adjacent lenses 78-2, 78-3 and the two first openings OP1 overlapping them is also inclined with respect to the first direction Dx. In addition, the arrangement direction D1 (not shown) of the two adjacent lenses 78-1, 78-3 and the two first openings OP1 overlapping them is also inclined with respect to the first direction Dx.

[0098] Furthermore, the arrangement patterns of the lenses 78 and the first openings OP1 of the adjacent photodiodes 30 that are provided to overlap each other are rotated by 90° with respect to each other. The relationship between the arrangement patterns of the lenses 78 and the first openings OP1 of the four adjacent photodiodes 30 is the same as in the first modified example described above, and a repeated description will be omitted.

[0099] In addition, the second modified example can be combined with the above-mentioned first embodiment. That is, in the multiple detection elements 3 (photodiodes 30), the three lenses 78-1, 78-2, 78-3 and the multiple first openings OP1 may be formed in the same arrangement pattern.

[0100] Second embodiment Fig. 11 is a plan view showing an optical filter included in a detection device according to the second embodiment. As shown in Fig. 11, an optical filter 7C included in a detection device 1C according to the second embodiment has a different configuration in that the diameters of the multiple first openings OP1 are irregularly formed. That is, multiple first openings OP1 are provided in a region overlapping one photodiode 30, and the diameter of at least one of the multiple first openings OP1 in the region overlapping one photodiode 30 is different from the diameters of the other openings.

[0101] For example, the diameter of the first opening OP1 overlapping the lens 78-1 is larger than the diameter of the first opening OP1 overlapping the lens 78-2. The diameter of the first opening OP1 overlapping the lens 78-3 is larger than the diameter of the first opening OP1 overlapping the lens 78-2 and smaller than the diameter of the first opening OP1 overlapping the lens 78-1. The diameter of the first opening OP1 overlapping the lens 78-4 is equal to the diameter of the first opening OP1 overlapping the lens 78-5. The diameter of the first opening OP1 overlapping the lens 78-6 is smaller than the diameter of the first opening OP1 overlapping the lens 78-7 and larger than the diameter of the first opening OP1 overlapping the lens 78-8.

[0102] In the second embodiment, the arrangement direction D1 of the lenses 78 and the first openings OP1 is provided parallel to the second direction Dy in a region overlapping one photodiode 30. Moreover, the lenses 78 and the first openings OP1 are formed in the same arrangement pattern in the multiple detection elements 3 (photodiodes 30).

[0103] That is, the arrangement pattern of the multiple lenses 78 and the multiple first openings OP1 has higher regularity in the arrangement direction of the photodiodes 30 (first direction Dx and second direction Dy) than the first embodiment, first modified example, and second modified example described above.

[0104] Even with such an arrangement pattern, the diameters of the multiple first openings OP1 are different and formed irregularly, so that even if a periodic regularity occurs in the arrangement relationship between the multiple photodiodes 30 and the multiple sub-pixels SPX, it is possible to suppress the occurrence of moire in the light that passes through the multiple first openings OP1 of the optical filter 7D and enters the multiple photodiodes 30.

[0105] The configuration of the second embodiment can be combined with the above-mentioned first embodiment, first modification, and second modification. That is, in a region overlapping one photodiode 30, the arrangement direction D1 of the lenses 78 and the first openings OP1 may be inclined with respect to the first direction Dx, and the diameters of the first openings OP1 may be irregular. In addition, in a region overlapping one photodiode 30, the lenses 78 and the first openings OP1 may be formed in an arrangement pattern rotated by 90°, and the diameters of the first openings OP1 may be irregular. In addition, in a region overlapping one photodiode 30, the number of the lenses 78 and the first openings OP1 may be 3 to 6, or 8 or more.

[0106] Third embodiment Fig. 12 is a plan view showing an optical filter included in a detection device according to the third embodiment. As shown in Fig. 12, in an optical filter 7D included in a detection device 1D according to the third embodiment, a first opening OP1 overlapping a lens 78-1 is not provided. That is, in the region overlapping the lens 78-1, a first light-shielding layer 71 (Fig. 6) is continuously formed. Also, a first opening OP1 is formed in each of the regions overlapping the lenses 78-2 to 78-8. In this embodiment, a plurality of first openings OP1 are provided in the region overlapping one photodiode 30, and the number of the plurality of first openings OP1 is different from the number of the plurality of lenses 78.

[0107] In addition, the lens 78-1 may be omitted in an area where the first opening OP1 is not formed. In the third embodiment, similarly to the above-described second embodiment, in an area overlapping one photodiode 30, the arrangement direction D1 of the multiple lenses 78 and the multiple first openings OP1 is provided in a direction parallel to the second direction Dy. In addition, the multiple lenses 78 and the multiple first openings OP1 are formed in the same arrangement pattern in the multiple detection elements 3 (photodiodes 30).

[0108] In this embodiment, the number of first openings OP1 aligned in a straight line in the arrangement direction D1 is smaller than in a configuration in which the first openings OP1 are provided overlapping the lens 78-1, i.e., in a configuration in which three first openings OP1 are aligned in the arrangement direction D1. This makes it possible to improve the irregularity of the arrangement of the first openings OP1 in the arrangement direction D1 overlapping the lens 78-1.

[0109] The position where the first opening OP1 is not provided may be any of the regions overlapping with the lenses 78-2 to 78-8, or there may be two or more regions where the first opening OP1 is not provided.

[0110] The configuration of the third embodiment can be combined with the above-described first embodiment, second embodiment, first modification, and second modification. That is, in a region overlapping one photodiode 30, the arrangement direction D1 of the lenses 78 and the first openings OP1 may be inclined with respect to the first direction Dx, and at least one of the first openings OP1 overlapping the lenses 78 may not be formed. In addition, in the multiple detection elements 3 (photodiodes 30), the multiple lenses 78 and the first openings OP1 may be formed in an arrangement pattern rotated by 90°, and at least one of the first openings OP1 overlapping the lenses 78 may not be formed. In addition, in a region overlapping one photodiode 30, the number of the lenses 78 and the first openings OP1 may be 3 to 6 or less, or 8 or more.

[0111] (Fourth embodiment) Fig. 13 is a plan view showing a photodiode according to a fourth embodiment. In Fig. 13, in order to make the drawing easier to see, a plurality of transistors and various wirings such as scanning lines and signal lines included in the detection element 3 are omitted.

[0112] As shown in FIG. 13, the photodiode 30A has a plurality of partial photodiodes 30S-1, 30S-2, ..., 30S-8. The partial photodiodes 30S-1, 30S-2, ..., 30S-8 are arranged in a triangular lattice pattern. The arrangement of the partial photodiodes 30S-1, 30S-2, ..., 30S-8 shown in FIG. 13 can be applied to the detection device 1C of the second embodiment (see FIG. 11). Lenses 78-1, 78-2, ..., 78-8, a first opening OP1 of the first light-shielding layer 71, and a second opening OP2 of the second light-shielding layer 72 shown in FIG. 13 are provided so as to overlap the partial photodiodes 30S-1, 30S-2, ..., 30S-8, respectively.

[0113] As shown in Fig. 13, the partial photodiodes 30S-1, 30S-2, and 30S-3 are arranged in the second direction Dy. The partial photodiodes 30S-4 and 30S-5 are arranged in the second direction Dy and are adjacent to an element row composed of the partial photodiodes 30S-1, 30S-2, and 30S-3 in the first direction Dx. The partial photodiodes 30S-6, 30S-7, and 30S-8 are arranged in the second direction Dy and are adjacent to an element row composed of the partial photodiodes 30S-4 and 30S-5 in the first direction Dx. The positions of the partial photodiodes 30S in the second direction Dy are staggered between adjacent element rows.

[0114] Light L is incident on the partial photodiodes 30S-1, 30S-2, ..., 30S-8 through the lenses 78-1, 78-2, ..., 78-8 and the first openings OP1 and the second openings OP2, respectively. The partial photodiodes 30S-1, 30S-2, ..., 30S-8 are electrically connected to each other and function as one photodiode 30A. That is, the signals output from the partial photodiodes 30S-1, 30S-2, ..., 30S-8 are integrated, and one detection signal Vdet is output from the photodiode 30A. In the following description, when it is not necessary to distinguish between the partial photodiodes 30S-1, 30S-2, ..., 30S-8, they are simply referred to as the partial photodiode 30S.

[0115] The partial photodiode 30S includes an i-type semiconductor layer 31, an n-type semiconductor layer 32, and a p-type semiconductor layer 33. The i-type semiconductor layer 31 and the n-type semiconductor layer 32 are, for example, amorphous silicon (a-Si). The p-type semiconductor layer 33 is, for example, polysilicon (p-Si). Note that the material of the semiconductor layers is not limited to this and may be polysilicon, microcrystalline silicon, or the like.

[0116] The n-type semiconductor layer 32 is an n+ region formed by doping impurities into a-Si. The p-type semiconductor layer 33 is a p+ region formed by doping impurities into p-Si. The i-type semiconductor layer 31 is, for example, a non-doped intrinsic semiconductor, and has lower conductivity than the n-type semiconductor layer 32 and the p-type semiconductor layer 33.

[0117] 11, an effective sensor region 37 where the p-type semiconductor layer 33 and the i-type semiconductor layer 31 (the n-type semiconductor layer 32) are connected is indicated by a dashed dotted line. The first opening OP1 of the first light-shielding layer 71 is provided so as to overlap with the sensor region 37.

[0118] The partial photodiodes 30S have different shapes in a plan view. The partial photodiodes 30S-1, 30S-2, and 30S-3 are each formed in a polygonal shape. The partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are each formed in a circular or semicircular shape.

[0119] The n-type semiconductor layers 32 of the partial photodiodes 30S-1, 30S-2, and 30S-3 arranged in the second direction Dy are electrically connected by connectors CN1-1 and CN1-2. The p-type semiconductor layers 33 of the partial photodiodes 30S-1, 30S-2, and 30S-3 are electrically connected by connectors CN2-1 and CN2-2.

[0120] Further, the n-type semiconductor layers 32 (i-type semiconductor layers 31) of the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are electrically connected by a base BA1. The p-type semiconductor layers 33 of the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are electrically connected by a base BA2. The bases BA1 and BA2 are formed in a substantially pentagonal shape, and the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are provided at the vertices. The base BA2 and the p-type semiconductor layers 33 of the partial photodiodes 30S-1, 30S-2, and 30S-3 are electrically connected by a connecting portion CN2-3. As a result, the multiple partial photodiodes 30S constituting one photodiode 30A are electrically connected.

[0121] The lower electrode 35 is provided in an area overlapping with each of the partial photodiodes 30S. All of the lower electrodes 35 are circular in plan view. That is, the lower electrode 35 may have a shape different from that of the partial photodiode 30S. For example, the partial photodiodes 30S-1, 30S-2, and 30S-3 are polygonal in plan view and are formed on the circular lower electrode 35. The partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are circular or semicircular in plan view having a smaller diameter than the lower electrode 35 and are formed on the circular lower electrode 35. The lower electrode 35 is supplied with the same reference potential VCOM as the p-type semiconductor layer 33, and the parasitic capacitance between the lower electrode 35 and the p-type semiconductor layer 33 can be suppressed.

[0122] The upper electrode 34 electrically connects the n-type semiconductor layers 32 of the multiple partial photodiodes 30S. The upper electrode 34 is electrically connected to each transistor (the reset transistor Mrst and the source follower transistor Msf (see FIG. 4)) of the array substrate 2. The upper electrode 34 may be provided in any manner, for example, it may cover a part of the partial photodiode 30S, or it may be provided so as to cover the entire partial photodiode 30S.

[0123] In this embodiment, a partial photodiode 30S is provided for each of the multiple lenses 78 and the multiple first openings OP1. As a result, as shown in Fig. 8, compared to a configuration in which the photodiode 30 is formed of a solid film having a rectangular shape or the like so as to cover the entire detection element 3 in a plan view, the semiconductor layer and wiring layer can be reduced in the region that does not overlap with the multiple lenses 78 and the multiple first openings OP1, and the parasitic capacitance of the photodiode 30 can be suppressed.

[0124] The planar structure of the photodiode 30A shown in FIG. 13 is merely an example and can be modified as appropriate. The number of partial photodiodes 30S included in one photodiode 30 may be seven or less, or nine or more. The arrangement of the partial photodiodes 30S is not limited to a triangular lattice shape, and may be arranged in a matrix shape, for example. The photodiode 30A shown in FIG. 13 can also be applied to the first embodiment, the third embodiment, the first modified example, and the second modified example. In this case, the partial photodiodes 30S-1, 30S-2, ..., 30S-8 are arranged at an angle with respect to the first direction Dx in accordance with the arrangement direction D1 of the multiple lenses 78 and the multiple first openings OP1.

[0125] Fig. 14 is a cross-sectional view showing a schematic cross-sectional configuration of a partial photodiode. Fig. 14 shows the cross-sectional configuration of one partial photodiode 30S-1 as well as the cross-sectional configuration of the reset transistor Mrst of the detection element 3. The cross-sectional configurations of the source follower transistor Msf and the readout transistor Mrd of the detection element 3 are similar to that of the reset transistor Mrst.

[0126] The substrate 21 is an insulating substrate, and may be, for example, a glass substrate such as quartz or alkali-free glass, or a resin substrate such as polyimide. The gate electrode 64 is provided on the substrate 21. The insulating films 22 and 23 are provided on the substrate 21 to cover the gate electrode 64. The insulating films 22 and 23 and the insulating films 24, 25, and 26 are inorganic insulating films, and may be, for example, silicon oxide (SiO2), silicon nitride (SiN), or the like.

[0127] The semiconductor layer 61 is provided on the insulating film 23. The semiconductor layer 61 is made of, for example, polysilicon. However, the semiconductor layer 61 is not limited to this and may be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low temperature polycrystalline silicon (LTPS), or the like. The reset transistor Mrst has a bottom gate structure in which the gate electrode 64 is provided below the semiconductor layer 61, but may have a top gate structure in which the gate electrode 64 is provided above the semiconductor layer 61, or may have a dual gate structure in which the gate electrode 64 is provided above and below the semiconductor layer 61.

[0128] The semiconductor layer 61 includes a channel region 61a, high-concentration impurity regions 61b and 61c, and low-concentration impurity regions 61d and 61e. The channel region 61a is, for example, a non-doped intrinsic semiconductor or a low-concentration impurity region, and has lower conductivity than the high-concentration impurity regions 61b and 61c and the low-concentration impurity regions 61d and 61e. The channel region 61a is provided in a region overlapping with the gate electrode 64.

[0129] The insulating films 24 and 25 are provided on the insulating film 23 to cover the semiconductor layer 61. The source electrode 62 and the drain electrode 63 are provided on the insulating film 25. The source electrode 62 is connected to the high concentration impurity region 61b of the semiconductor layer 61 through a contact hole H5. The drain electrode 63 is connected to the high concentration impurity region 61c of the semiconductor layer 61 through a contact hole H3. The source electrode 62 and the drain electrode 63 are made of, for example, a TiAlTi or TiAl laminated film having a laminated structure of titanium and aluminum.

[0130] The gate line GLsf is a wiring connected to the gate of the source follower transistor Msf. The gate line GLsf is provided in the same layer as the gate electrode 64. The drain electrode 63 is connected to the gate line GLsf via a contact hole that penetrates from the insulating film 22 through the insulating film 25.

[0131] Next, the cross-sectional configuration of the photodiode 30 will be described. In FIG. 14, the partial photodiode 30S-1 will be described, but the description of the partial photodiode 30S-1 can also be applied to the other partial photodiodes 30S-2, . . . , 30S-8. As shown in FIG. 14, the lower electrode 35 is provided on the substrate 21 in the same layer as the gate electrode 64 and the gate line GLsf. The insulating film 22 and the insulating film 23 are provided on the lower electrode 35. The photodiode 30A is provided on the insulating film 23. In other words, the lower electrode 35 is provided between the substrate 21 and the p-type semiconductor layer 33. The lower electrode 35 is formed of the same material as the gate electrode 64, and thus functions as a light-shielding layer, and the lower electrode 35 can suppress the intrusion of light from the substrate 21 side into the photodiode 30A.

[0132] In the third direction Dz, the i-type semiconductor layer 31 is provided between the p-type semiconductor layer 33 and the n-type semiconductor layer 32. In this embodiment, the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 are stacked in this order on the insulating film 23.

[0133] Specifically, the p-type semiconductor layer 33 is provided on the insulating film 23 in the same layer as the semiconductor layer 61. The insulating films 24, 25, and 26 are provided to cover the p-type semiconductor layer 33. A contact hole H13 is provided in the insulating films 24 and 25 at positions where the insulating films 24 and 25 overlap with the p-type semiconductor layer 33. The insulating film 26 is provided on the insulating film 25 to cover a plurality of transistors including the reset transistor Mrst. The insulating film 26 covers the side surfaces of the insulating films 24 and 25 that form the inner walls of the contact hole H13. Furthermore, a contact hole H14 is provided in the insulating film 26 at a position where the insulating film 24 and 25 overlap with the p-type semiconductor layer 33.

[0134] The i-type semiconductor layer 31 is provided on the insulating film 26, and is connected to the p-type semiconductor layer 33 via a contact hole H14 that passes through the insulating film 26 from the insulating film 24. The n-type semiconductor layer 32 is provided on the i-type semiconductor layer 31.

[0135] The insulating film 27 is provided on the insulating film 26, covering the photodiode 30. The insulating film 27 is provided in direct contact with the photodiode 30 and the insulating film 26. The insulating film 27 is made of an organic material such as photosensitive acrylic. The insulating film 27 is thicker than the insulating film 26. The insulating film 27 has better step coverage than inorganic insulating materials, and is provided to cover the side surfaces of the i-type semiconductor layer 31 and the n-type semiconductor layer 32.

[0136] The upper electrode 34 is provided on the insulating film 27. The upper electrode 34 is made of a conductive material having translucency, such as ITO (Indium Tin Oxide). The upper electrode 34 is provided following the surface of the insulating film 27, and is connected to the n-type semiconductor layer 32 through a contact hole H1 provided in the insulating film 27. The upper electrode 34 is also electrically connected to the drain electrode 63 of the reset transistor Mrst and the gate line GLsf through a contact hole H2 provided in the insulating film 27.

[0137] The insulating film 28 is provided on the insulating film 27, covering the upper electrode 34. The insulating film 28 is an inorganic insulating film. The insulating film 28 is provided as a protective layer that suppresses the intrusion of moisture into the photodiode 30. The superimposed conductive layer 36 is provided on the insulating film 28. The superimposed conductive layer 36 is a conductive material having light-transmitting properties, such as ITO. The superimposed conductive layer 36 may be omitted.

[0138] The protective film 29 is provided on the insulating film 28, covering the superposed conductive layer 36. The protective film 29 is an organic protective film. The protective film 29 is formed so as to flatten the surface of the detection device 1.

[0139] In this embodiment, the p-type semiconductor layer 33 and the lower electrode 35 of the photodiode 30A are provided in the same layer as the transistors, so that the manufacturing process can be simplified compared to when the photodiode 30 is formed in a different layer from the transistors.

[0140] 14 is merely an example, and is not limited thereto, and for example, the photodiode 30A may be provided in a layer different from that of each transistor, and may be provided by stacking the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 in this order on the insulating film 26, similar to the photodiode 30 shown in FIG.

[0141] Although the preferred embodiment of the present invention has been described above, the present invention is not limited to such an embodiment. The contents disclosed in the embodiment are merely examples, and various modifications are possible within the scope of the present invention. Appropriate modifications made within the scope of the present invention naturally belong to the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-mentioned embodiments and each modified example.

[0142] For example, although the display device 100 and the detection device 1 have been described as separate devices in this embodiment, it is also possible to add the detection device 1 inside the display device 100. For example, it is possible to add a structure having the functions of the detection device 1 between the TFT substrate and the color filter substrate of the liquid crystal display device 100, or to form the detection device 1 on the TFT substrate of the OLED display device 100. In that case, it may be said that the detection device 1 is a part of the display device 100. [Explanation of symbols]

[0143] 1, 1A, 1B, 1C, 1D Detector 2 Array Board 3. Detector element 7, 7A, 7B, 7C, 7D Optical Filters 10 Sensor section 21 Substrate 29 Protective film 30, 30A Photodiode 30S, 30S-1, 30S-2, 30S-3, 30S-4, 30S-5, 30S-6, 30S-7, 30S-8 Partial photodiode 71 1st light shielding layer 72 Second light shielding layer 73 Filter Layer 74 First transparent resin layer 75 Second transparent resin layer 78 Lenses 100 display device AA detection area GA Peripheral Areas OP1 1st opening OP2 Second opening

Claims

1. A substrate; A plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided so as to overlap the plurality of photodiodes, respectively; a light-shielding layer provided between the plurality of photodiodes and the plurality of lenses, the light-shielding layer having a plurality of openings; A plurality of the openings are provided in a region overlapping one of the photodiodes, and an arrangement direction of the plurality of the openings in the region overlapping one of the photodiodes is inclined with respect to the first direction. Detection device.

2. The lenses are provided so as to overlap the openings, respectively, In a region overlapping one of the photodiodes, the arrangement direction of the plurality of lenses is inclined with respect to the first direction. The detection device according to claim 1 .

3. a first photodiode and a second photodiode adjacent to each other in the first direction; The arrangement direction of the plurality of openings in the region overlapping the first photodiode is parallel to the arrangement direction of the plurality of openings in the region overlapping the second photodiode.

3. The detection device according to claim 1 or 2.

4. a first photodiode and a second photodiode adjacent to each other in the first direction; An arrangement direction of the plurality of openings in a region overlapping the first photodiode intersects with an arrangement direction of the plurality of openings in a region overlapping the second photodiode.

3. The detection device according to claim 1 or 2.

5. a third photodiode adjacent to the first photodiode in a second direction intersecting the first direction; a fourth photodiode adjacent to the third photodiode in the first direction, The directions of the plurality of openings in the regions overlapping with the first to fourth photodiodes are arranged perpendicular to each other.

5. The detection device according to claim 4.

6. In a region overlapping one of the photodiodes, a diameter of at least one of the plurality of openings is different from a diameter of the other openings. A detection device according to any one of claims 1 to 5.

7. In a region overlapping one of the photodiodes, the number of the plurality of apertures is different from the number of the plurality of lenses. A detection device according to any one of claims 1 to 6.

8. In a region overlapping one of the photodiodes, the light-shielding layer has no opening formed in a region corresponding to at least one of the lenses. A detection device according to any one of claims 1 to 7.

9. A substrate; A plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided so as to overlap the plurality of photodiodes, respectively; a light-shielding layer provided between the plurality of photodiodes and the plurality of lenses, the light-shielding layer having a plurality of openings; A plurality of the apertures and a plurality of the lenses are provided in a region overlapping one of the photodiodes, and the number of the apertures is different from the number of the lenses. Detection device.

10. One of the photodiodes includes a plurality of partial photodiodes, The lens is provided so as to overlap each of the plurality of partial photodiodes.

10. A detection device according to any one of claims 1 to 9.

11. a scanning line provided on the substrate and extending in the first direction in correspondence with the plurality of photodiodes; In a region overlapping one of the photodiodes, the arrangement direction of the plurality of openings is inclined with respect to the extending direction of the scanning line. Detecting device according to any one of claims 1 to 10.

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