METAL WIRING MANUFACTURING METHOD, METAL WIRING MANUFACTURING APPARATUS, LASER LIGHT IRRADIATION CONTROL DEVICE, AND LASER LIGHT IRRADIATION CONTROL PROGRAM

Abstract

To manufacture a metal wiring with low resistance and high reliability.SOLUTION: Disclosed is a method of manufacturing a metal wiring, which includes a laser beam irradiation step in which the metal wiring is formed by irradiating a predetermined irradiation region of a film containing metal and / or metal oxide with a laser beam. This method includes a step of assigning a preset scanning parameter to a scanning region pattern consisting of an irradiation region pattern and a non-irradiation region pattern, which is a region other than the irradiation region pattern in a circumscribed parallelogram of the irradiation region pattern.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing metal wiring, a metal wiring manufacturing apparatus, a laser light irradiation control device, and a laser light irradiation control program. [Background technology]

[0002] A circuit board has a structure in which conductive wiring is applied on a substrate. The manufacturing method of a circuit board is generally as follows. First, a photoresist is applied onto a substrate to which a metal foil is attached. Next, the photoresist is exposed and developed to obtain a negative shape of a desired circuit pattern. Next, the metal foil not covered with the photoresist is removed by chemical etching to form a pattern. This makes it possible to manufacture a high-performance conductive substrate. However, the conventional method has disadvantages such as a large number of steps, cumbersomeness, and the need for a photoresist material. In contrast, a direct wiring printing technique that directly prints desired metal wiring on a substrate using a dispersion in which particles selected from the group consisting of metal particles and metal oxide particles are dispersed has attracted attention. This technique has a small number of steps, does not require the use of a photoresist material, and is therefore extremely productive.

[0003] As an example of the direct printed wiring technique, a coating film is formed by printing a dispersion on a substrate by screen printing, inkjet printing, or the like, and then the coating film is thermally sintered by scanning irradiation with laser light or the like to obtain low-resistance metal wiring. According to a method of irradiating laser light only to the portion requiring thermal sintering, a desired metal wiring can be easily formed even when the heat resistance of the substrate is relatively low. For example, a method has been proposed in the past in which a coating film formed by applying a dispersion containing fine particles of metal or metal oxide to a substrate is scanned with laser light. However, this method has problems such as variation in the resistance value of the metal wiring due to variation in the heating conditions of the coating film by the laser light, and high resistance of the metal wiring due to insufficient heating of the coating film.

[0004] Patent Document 1 describes a method for manufacturing metal wiring, which includes a step of repeatedly scanning a light beam over a surface containing metal particles to sinter the metal particles and form a metal wiring, and is characterized in that the scanning speed of the light beam is varied depending on the length of the scanning line that constitutes the metal wiring. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2019-140284 A Summary of the Invention [Problem to be solved by the invention]

[0006] When scanning a laser beam irradiation spot on a film in a reciprocating or one-way direction in a first direction while moving the laser beam in a second direction different from the first direction to scan the film without gaps, if the scanning length varies significantly from location to location, it is extremely difficult to make the irradiation conditions uniform throughout the irradiation area.

[0007] The present invention aims to solve the above problems and provide a metal wiring manufacturing method, a metal wiring manufacturing apparatus, a laser light irradiation control device, and a laser light irradiation control program that are capable of manufacturing low-resistance, highly reliable metal wiring. [Means for solving the problem]

[0008] The present disclosure encompasses the following aspects. [1] A method for manufacturing a metal wiring, comprising: a laser light irradiation step of irradiating a laser light to a predetermined irradiation area of ​​a film containing a metal and / or metal oxide to form a metal wiring, The laser light irradiation step includes the following steps: a scanning area pattern generating step of generating a scanning area pattern including a two-dimensional irradiation area pattern that is previously created and is composed of one or more closed figures, and a non-irradiation area pattern that is an area other than the irradiation area pattern within a circumscribed parallelogram of the irradiation area pattern; A parameter assignment step of assigning preset scanning parameters to the scanning area pattern; and an irradiation step of irradiating the irradiation region with laser light by scanning an irradiation target position of the laser light in a direction of a first side of the circumscribed parallelogram over the entire area of ​​the circumscribed parallelogram while moving the position in a direction of a second side adjacent to the first side in accordance with the scanning region pattern and the scanning parameters; Including, The method, wherein the scanning parameters include a scan length, which is a total width of the circumscribing parallelogram, emitting laser light for an illuminated area pattern and not emitting laser light for a non-illuminated area pattern. [2] The method according to aspect 1, wherein the film subjected to the laser light irradiation step is formed on a substrate. [3] The method according to aspect 2, wherein the film subjected to the laser light irradiation step is a coating film formed on the substrate. [4] The method according to any one of aspects 1 to 3 above, wherein the scanning parameters assigned to the non-irradiation area pattern are different from the scanning parameters assigned to the irradiation area pattern only in that laser light is not emitted. [5] The method according to any one of the above aspects 1 to 4, wherein the circumscribing parallelogram is a minimum circumscribing rectangle. [6] The method according to any one of aspects 1 to 5 above, wherein the circumscribed parallelogram is a rectangle having a long side and a short side, and the first side is the long side. [7] The method according to any one of aspects 1 to 6, wherein the irradiation area pattern is composed of two or more closed figures, and the circumscribing parallelogram is specified for each closed figure. [8] The method according to any one of the above aspects 1 to 7, wherein the irradiation area pattern is a two-dimensional projection pattern of a three-dimensional pattern generated on a previously obtained three-dimensional shape pattern of the film surface. [9] The illumination area pattern is A two-dimensional base pattern previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern of the film surface to generate a three-dimensional pattern for determining an irradiation region; Measuring a dimension B1 of a span portion B in a Y-axis direction on the two-dimensional base pattern; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern; is a reduced correction pattern generated by The method according to any one of Aspects 1 to 7, wherein in the irradiating step, an X-axis direction is designated as the direction of the first side, and a Y-axis direction is designated as the direction of the second side.

[10] The method according to any one of the above aspects 1 to 9, wherein the laser light is scanned while overlapping in the line width direction of the scanning line.

[11] The method of claim 10, wherein the overlap is greater than or equal to 10% and less than or equal to 99% of the line width.

[12] The method according to any one of the above aspects 1 to 11, wherein the film contains copper and / or copper oxide.

[13] The method according to any one of the above aspects 1 to 12, wherein the membrane further comprises a dispersant.

[14] A metal wiring manufacturing apparatus for forming metal wiring in a structure including a substrate and a film containing a metal and / or metal oxide disposed on the substrate by irradiating a laser beam to a preset irradiation area of ​​the film, comprising: The metal wiring manufacturing apparatus comprises: a structure holder that holds the structure; A laser oscillator that generates laser light; A laser beam scanning device that scans the laser beam emitted from the laser oscillation device; and a processing device for controlling the laser oscillation device and the laser beam scanning device; Equipped with The processing device comprises: A scanning area pattern composed of a two-dimensional irradiation area pattern and a non-irradiation area pattern which is an area other than the irradiation area pattern within a circumscribed parallelogram of the irradiation area pattern; and scanning parameters assigned to said scan area pattern; to the laser oscillation device and the laser beam scanning device, thereby operating the laser oscillation device and the laser beam scanning device in such a way that an irradiation target position of the laser beam is moved in a direction of a second side adjacent to the first side while scanning in a direction of a first side of the circumscribed parallelogram over the entire area of ​​the circumscribed parallelogram, in accordance with the scanning control signal; The scanning parameters include a scanning length which is a total width of a parallelogram, and laser light emission to an irradiation area pattern and non-emission of laser light to a non-irradiation area pattern.

[15] The laser beam scanning device is a galvanometer scanner including a galvanometer motor and a galvanometer mirror, 15. The metal wiring manufacturing apparatus according to claim 14, wherein the processing device controls the emission of the laser light and the non-emission of the laser light by switching the laser oscillation device on and off.

[16] The metal wiring manufacturing apparatus according to aspect 14 or 15, wherein the scanning parameters assigned to the non-irradiated area pattern differ from the scanning parameters assigned to the irradiated area pattern only in that laser light is not emitted.

[17] A laser light irradiation control device that controls a laser oscillator and a laser light scanning device of a metal wiring manufacturing apparatus to irradiate a laser light to a preset irradiation area of ​​a film containing a metal and / or metal oxide, comprising: a coordinate data generating unit that generates coordinate data of a scanning area pattern composed of the irradiation area pattern and the non-irradiation area pattern after specifying a circumscribed parallelogram for the input two-dimensional irradiation area pattern and further specifying an area other than the irradiation area pattern within the circumscribed parallelogram as a non-irradiation area pattern; a scanning control signal generating unit that assigns preset scanning parameters to the coordinate data and generates a scanning control signal according to the coordinate data and the scanning parameters; an output unit that outputs the scanning control signal to a laser oscillator and a laser beam scanning device; 4. A laser light irradiation control device, wherein the scanning parameters include a scanning length that is a total width of the circumscribed parallelogram, and laser light emission to an irradiation area pattern and laser light non-emission to a non-irradiation area pattern.

[18] The laser light irradiation control device according to aspect 17, wherein the scanning parameters assigned to the non-irradiation area pattern differ from the scanning parameters assigned to the irradiation area pattern only in that laser light is not emitted.

[19] The laser light irradiation control device according to aspect 17 or 18, wherein the circumscribing parallelogram is a minimum circumscribing rectangle.

[20] The laser light irradiation control device according to any one of aspects 17 to 19, wherein the circumscribed parallelogram is a rectangle having long sides and short sides, and the direction of the scanning length is the direction of the long sides.

[21] The laser light irradiation control device according to any one of aspects 17 to 20, wherein the irradiation area pattern is a two-dimensional projection pattern of a three-dimensional pattern generated on a previously acquired three-dimensional shape pattern of the film surface.

[22] The illumination area pattern is A two-dimensional base pattern previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern of the film surface to generate a three-dimensional pattern for determining an irradiation region; Measuring a dimension B1 of a span portion B in a Y-axis direction on the two-dimensional base pattern; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern; is a reduced correction pattern generated by 21. The laser beam irradiation control device according to any one of aspects 17 to 20, wherein the X-axis direction is the direction of the scanning length of the irradiation target position of the laser beam, and the Y-axis direction is the direction of the scanning width of the irradiation target position of the laser beam.

[23] A laser light irradiation control program for controlling a laser oscillator and a laser light scanner of a metal wiring manufacturing apparatus to irradiate a laser beam to a preset irradiation area of ​​a film containing a metal and / or metal oxide, comprising: A circumscribing parallelogram is specified for the input two-dimensional irradiation area pattern, and an area other than the irradiation area pattern within the circumscribing parallelogram is further specified as a non-irradiation area pattern, and then coordinate data of a scanning area pattern constituted by the irradiation area pattern and the non-irradiation area pattern is generated; Assigning preset scanning parameters to the coordinate data; generating a scan control signal according to the coordinate data and the scan parameters; outputting the scanning control signal; and making the laser light irradiation control device execute the above steps, a scanning parameter including a scanning length that is a total width of the circumscribing parallelogram, and a laser beam emission to an irradiation area pattern and a laser beam non-emission to a non-irradiation area pattern.

[24] The laser light irradiation control program according to aspect 23, wherein the scanning parameters assigned to the non-irradiation area pattern differ from the scanning parameters assigned to the irradiation area pattern only in that laser light is not emitted.

[25] The laser light irradiation control program according to aspect 23 or 24, wherein the circumscribing parallelogram is a minimum circumscribing rectangle.

[26] The laser light irradiation control program according to any one of aspects 23 to 25, wherein the circumscribed parallelogram is a rectangle having a long side and a short side, and the direction of the scanning length is the direction of the long side.

[27] The laser light irradiation control program according to any one of aspects 23 to 26, wherein the irradiation area pattern is composed of two or more closed figures, and the circumscribing parallelogram is specified for each closed figure.

[28] The laser light irradiation control program according to any one of the above aspects 23 to 27, wherein the irradiation area pattern is a two-dimensional projection pattern of a three-dimensional pattern generated on a previously acquired three-dimensional shape pattern of the film surface.

[29] The illumination area pattern is A two-dimensional base pattern previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern of the film surface to generate a three-dimensional pattern for determining an irradiation region; Measuring a dimension B1 of a span portion B in a Y-axis direction on the two-dimensional base pattern; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern; is a reduced correction pattern generated by 28. The laser light irradiation control program according to any one of the above embodiments 23 to 27, wherein the X-axis direction is the direction of the scanning length of the irradiation target position of the laser light, and the Y-axis direction is the direction of the scanning width of the irradiation target position of the laser light.

[30] The laser light irradiation control program according to any one of aspects 23 to 29, wherein the laser light is scanned while overlapping in a line width direction of a scanning line.

[31] The laser light irradiation control program according to claim 30, wherein the overlap is greater than or equal to 10% and less than or equal to 99% of the line width.

[32] A computer-readable recording medium or recording device storing a program according to any one of aspects 23 to 31 above. Effect of the Invention

[0009] According to one aspect of the present invention, there can be provided a metal wiring manufacturing method, a metal wiring manufacturing apparatus, a laser light irradiation control device, and a laser light irradiation control program, which are capable of manufacturing metal wiring with low resistance and high reliability. [Brief description of the drawings]

[0010] [Figure 1A] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 1B] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 1C]5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Diagram 2] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 3A] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 3B] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 3C] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 4] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Diagram 5] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 6A] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 6B] 5A to 5C are diagrams illustrating a procedure for forming a scanning area pattern in the present embodiment. [Figure 7] 1 is a schematic diagram showing a configuration example of a metal wiring manufacturing apparatus according to an embodiment of the present invention; [Figure 8] 1 is a block diagram showing an example of the configuration of a metal wiring manufacturing apparatus according to an embodiment of the present invention; [Figure 9A] 5 is a flowchart illustrating a process executed by a laser light irradiation control program according to the present embodiment. [Figure 9B] 5 is a flowchart illustrating a process executed by a laser light irradiation control program according to the present embodiment. [Figure 9C] 5 is a flowchart illustrating a process executed by a laser light irradiation control program according to the present embodiment. [Figure 10A] FIG. 2 is a diagram illustrating a procedure for evaluating electrical conductivity in the examples and comparative examples. [Figure 10B] FIG. 2 is a diagram illustrating a procedure for evaluating electrical conductivity in the examples and comparative examples. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The inventors have found that by specifying a circumscribed parallelogram for the irradiation area pattern, scanning the irradiation target position over the entire area within the circumscribed parallelogram, and irradiating only the irradiation area corresponding to the irradiation area pattern with laser light, the scanning length of the irradiation target position can be leveled regardless of the shape of the irradiation area pattern. By leveling the scanning length, the variation in the degree of heating between the portions of the film is reduced, and therefore a metal wiring with low resistance and high reliability can be manufactured.

[0012] <Metal Wiring Manufacturing Method> One aspect of the present invention provides a method for manufacturing a metal wiring, comprising a laser light irradiation step of forming a metal wiring by irradiating a laser light to a predetermined irradiation area of ​​a film containing a metal and / or a metal oxide. In one aspect, the laser light irradiation step includes the following steps: a scanning area pattern generating step of generating a scanning area pattern including a two-dimensional irradiation area pattern that is created in advance and is composed of one or more closed figures, and a non-irradiation area pattern that is an area other than the irradiation area pattern within a circumscribed parallelogram of the irradiation area pattern; A parameter assignment step of assigning preset scanning parameters to the scanning area pattern; and an irradiation step of irradiating the irradiation region with the laser light by scanning an irradiation target position of the laser light in a direction of a first side of the circumscribed parallelogram over the entire area of ​​the parallelogram while moving the position in a direction of a second side adjacent to the first side according to the scanning region pattern and the scanning parameters; Includes. In one aspect, the scanning parameters include emitting laser light to the illuminated region pattern and not emitting laser light to the non-illuminated region pattern.

[0013] <Film formation> In one embodiment, the film containing metal and / or metal oxide to be subjected to the laser light irradiation step may be formed by coating, lamination, deposition, or the like. For example, a coating film containing metal and / or metal oxide may be formed on the surface of the substrate. In one embodiment, the film may be a coating film formed by applying a paste material containing metal and / or metal oxide. Before application, the surface of the substrate may be washed in advance. The paste material contains metal and / or metal oxide, and may optionally contain an organic substance, and may further contain a solvent. In one embodiment, the solvent is capable of dissolving or dispersing, preferably dissolving, the organic substance, and dispersing metal and / or metal oxide (e.g., particles thereof). More detailed examples of the substrate and the paste material will be described later.

[0014] The coating method for the coating film is not particularly limited, and coating methods such as die coating, spin coating, slit coating, bar coating, knife coating, spray coating, and dip coating can be used. After the above coating, the solvent remaining in the coating film may be removed as necessary. In this manner, a structure including a substrate and a film containing a metal and / or metal oxide disposed on the substrate is obtained.

[0015] <Laser light irradiation process> In this process, a laser beam is irradiated to a preset irradiation area of ​​the film to form metal wiring. The type of laser light source that can be used includes YAG (yttrium aluminum garnet), YVO4 (yttrium vanadate), Yb (ytterbium), semiconductors (GaAs, GaAlAs, GaInAs), carbon dioxide gas, fiber lasers, etc. As the laser beam, not only the fundamental wave but also higher harmonics may be extracted and used as necessary. In one embodiment, the laser beam irradiation process includes the following steps.

[0016] [Scanning area pattern generation step] In this step, a scanning area pattern is generated that is composed of a two-dimensional irradiation area pattern composed of one or more closed figures created in advance, and a non-irradiation area pattern that is an area other than the irradiation area pattern within the circumscribed parallelogram of the irradiation area pattern. The shape of the closed figure is not limited, and may be various shapes such as an irregular shape (L-shape, H-shape, etc.), a polygon (triangle, rectangle, etc.), a circle, an ellipse, etc.

[0017] Unless otherwise specified, the parallelogram referred to in this disclosure is defined to include not only a rectangle whose opposite sides are strictly parallel, but also a rectangle whose opposite sides are not parallel relative to each other within a range that does not impair the advantage of the present invention, that is, the leveling of the scanning length (i.e., an approximately parallelogram). In one embodiment, the parallelogram of the present disclosure also includes a trapezoid whose upper base / lower base length ratio is 0.7 or more and 1 or less.

[0018] In one embodiment, the parallelogram may be a rectangle. Note that the rectangle in the present disclosure includes not only a rectangle whose four interior angles are strictly right angles, but also a rectangle whose interior angles are slightly deviated from right angles (e.g., within ±5°) (i.e., approximately rectangular).

[0019] In one embodiment, the parallelogram may be a rectangle having a long side and a short side (i.e., a rectangle other than a square). A rectangle is advantageous in terms of making the degree of heating of the film by the laser light more uniform. In addition, it is preferable that the direction of the long side is the direction of the first side when scanning the irradiation target position. In this case, the process efficiency can be improved by reducing the number of scanning lines.

[0020] In one embodiment, the parallelogram is the minimum circumscribing parallelogram of the irradiation area pattern. In the present disclosure, the minimum circumscribing parallelogram of the irradiation area pattern means the circumscribing parallelogram of the irradiation area pattern that has the smallest area of ​​the parallelogram. The minimum circumscribing parallelogram is advantageous in terms of improving process efficiency by minimizing the scanning area of ​​the irradiation target position. In a preferred embodiment, the circumscribing parallelogram is the minimum circumscribing rectangle (i.e., the rectangle with the smallest area among the circumscribing rectangles).

[0021] The circumscribing parallelogram of the irradiation area pattern may surround one or more closed figures. For example, as shown in Fig. 1A, a circumscribing parallelogram A may be specified to surround two or more closed figures (i.e., closed figures 1 and 2), or as shown in Fig. 1B, a circumscribing parallelogram (circumscribing parallelogram A1 and circumscribing parallelogram A2 in Fig. 1B) may be specified for each of the two or more closed figures (closed figures 1 and 2 in Fig. 1B). Referring to Figures 1A and 1C, when specifying a circumscribed parallelogram enclosing two or more closed figures, if there is a closed figure 1 that can constitute at least a part of the first side and at least a part of the second side, a parallelogram bounded by vertices p1, p2, p3, and p4 may be specified by first specifying a first side direction a and a second side direction b based on the closed figure 1, and then specifying vertex p3 so that a fully closed figure exists between the first side and its opposite side and between the second side and its opposite side, and the lengths of the first side and the second side are respectively minimum.

[0022] Referring to Figure 2, a circumscribing parallelogram A1 may be specified for an L-shaped irradiation area pattern 1, and a non-irradiation area pattern 1a may also be specified to generate a scanning area pattern consisting of the irradiation area pattern 1 and the non-irradiation area pattern 1a (i.e., the pattern of the area surrounded by the circumscribing parallelogram A1).

[0023] Also, referring to Fig. 3A, a circumscribing parallelogram A2 of the irradiation area pattern 2 and non-irradiation area patterns 2a and 2b may be specified for the triangular irradiation area pattern 2 to generate a scanning area pattern consisting of the irradiation area pattern 2 and the non-irradiation area patterns 2a and 2b. If multiple circumscribing parallelograms can be specified for one irradiation area pattern, any one of them may be selected. For example, referring to Fig. 3B, another circumscribing parallelogram A3 of the irradiation area pattern 2 and non-irradiation area pattern 2c may be specified for the above-mentioned irradiation area pattern 2.

[0024] 3C, a circumscribing parallelogram A4 of the irradiation area pattern 4 and non-irradiation area patterns 4a, 4b, 4c, and 4d may be specified for the elliptical irradiation area pattern 4 to generate a scanning area pattern consisting of the irradiation area pattern 4 and the non-irradiation area patterns 4a, 4b, 4c, and 4d. Alternatively, it is also a preferred embodiment to use a circular irradiation area pattern instead of the elliptical shape shown in FIG.

[0025] When the irradiation target position is moved in the direction D2 of the second side while scanning in the direction D1 of the first side with a scanning length S that is the full width of the parallelogram, the scanning length S1 of the laser light emitting part and the scanning length S2 of the laser light non-emitting part can be set arbitrarily by switching between emitting and not emitting the laser light. This makes it possible to level the scanning length of the irradiation target position regardless of the shape of the irradiation region pattern, and to reduce the variation in the degree of heating between parts of the film due to the laser light irradiation.

[0026] In one embodiment, the laser light irradiation area and non-irradiation area of ​​the film surface are areas formed by projecting the shapes of the above-mentioned irradiation area pattern and non-irradiation area pattern onto the three-dimensional shape pattern of the film surface previously acquired. Referring to FIG. 4, the irradiation area R is an area formed by projecting the irradiation area pattern P with a circumscribed parallelogram A specified onto the three-dimensional shape pattern 41 of the film surface. The three-dimensional shape pattern of the film surface can be acquired by a conventionally known means, for example, the shape of the film surface may be read and acquired by an image recognition device such as an image sensor. The irradiation area pattern and non-irradiation area pattern are projected onto the acquired three-dimensional shape pattern. The alignment of the irradiation area pattern and the three-dimensional shape pattern of the film surface may be performed by software known to those skilled in the art, or manually. In one embodiment, an XYZ coordinate system and its reference point (origin) are specified, and a three-dimensional shape pattern 41 on the film surface is positioned within the XYZ coordinate system so that the height in the Z-axis direction is minimum. An irradiation area pattern P is then positioned on the XY plane above the three-dimensional shape pattern in the Z-axis direction (i.e., in the + direction). If desired, the irradiation area pattern P and the three-dimensional shape pattern 41 on the film surface may be aligned using a top view image or the like, and then the shape of the irradiation area pattern P may be projected in the Z direction onto the three-dimensional shape pattern 41 to generate an irradiation area R.

[0027] In one embodiment, the irradiation area pattern may be a two-dimensional projection pattern of a three-dimensional pattern generated on a three-dimensional shape pattern of a film surface previously acquired. Referring to FIG. 5, in one embodiment, the irradiation area pattern P may be generated by generating a three-dimensional pattern 42 for determining the irradiation area on a three-dimensional shape pattern 41 of the film surface previously acquired, and then projecting the three-dimensional pattern 42 for determining the irradiation area two-dimensionally. When using the three-dimensional pattern for determining the irradiation area generated in this manner, it is possible to set the irradiation area more precisely taking into account the three-dimensional shape of the film surface, which is particularly advantageous in reducing the resistance of the metal wiring and improving its reliability. For the irradiation area pattern P generated by the above projection, a circumscribed parallelogram and a non-irradiation area pattern may be specified in the above-mentioned procedure. Referring again to FIG. 4, in one embodiment, the irradiation area R may be formed by back-projecting the irradiation area pattern P onto the three-dimensional shape pattern 41.

[0028] 6A and B, in one embodiment, the illumination area pattern P is A two-dimensional base pattern 40 previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern 41 of the film surface to generate a three-dimensional pattern 42 for determining an irradiation region; Measuring a dimension B1 of a span B in the Y-axis direction on the two-dimensional base pattern 40; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern 42 for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern 40 by B1 / B2 to generate a reduced correction pattern; The reduced correction pattern may be generated by the above method. In one embodiment, the dimension B1 in the Y-axis direction is measured over the entire X-axis direction of the two-dimensional base pattern 40 having the X-axis dimension A1 and the Y-axis dimension B1, and the dimension B2 of the portion corresponding to each dimension B1 is measured, and for each pair of the dimension B1 and the dimension B2, B1 / B2 is calculated and the reduction correction of the dimension B1 is performed. When the irradiation area pattern generated in this manner is used, it is possible to set the irradiation area more precisely taking into account the three-dimensional shape of the film surface, which is particularly advantageous in reducing the resistance of the metal wiring and improving its reliability. The reduced correction pattern may be used as the irradiation area pattern, and a circumscribed parallelogram and a non-irradiation area pattern may be specified for this in the above-mentioned procedure. Referring again to FIG. 4, in one embodiment, the irradiation area R may be formed by back-projecting the irradiation area pattern P onto the three-dimensional shape pattern 41. In the irradiation step described later, the X-axis direction may be specified as the direction of the first side, and the Y-axis direction may be specified as the direction of the second side.

[0029] [Parameter assignment step] In this step, preset scanning parameters are assigned to the above-mentioned scanning area pattern. This allows a scanning control signal to be generated that includes position information of the irradiation area pattern and the non-irradiation area pattern and the associated scanning parameters. The laser oscillation device and the laser light scanning device of the metal wiring manufacturing device, as well as mechanisms such as an output adjustment mechanism and a spot adjustment mechanism, can receive such scanning control signals and perform laser light irradiation under desired conditions. When there are two or more irradiation area patterns, the scanning parameters may be the same or different between the irradiation area patterns, and are preferably the same between the irradiation area patterns.

[0030] The scanning parameters include laser light emission to the irradiated area pattern and laser light non-emission to the non-irradiated area pattern. The irradiation target position is scanned over the entire area within the circumscribed parallelogram of the present disclosure (thus, both the irradiated area pattern portion and the non-irradiated area pattern portion), but the laser light is irradiated only to the irradiated area pattern portion.

[0031] In one aspect, the scanning parameters assigned to the non-irradiated region pattern are different from the scanning parameters assigned to the irradiated region pattern only in that the laser beam is not emitted. In this case, the irradiation target position can be scanned in both the irradiated region pattern and the non-irradiated region pattern simply by switching between emitting and not emitting the laser beam, which is advantageous in terms of ease of process control.

[0032] Examples of scanning parameters other than whether or not to emit laser light include the following.

[0033] (center wavelength, pulse frequency) In one embodiment, the central wavelength of the laser light is 350 nm or more and 600 nm or less, preferably 355 nm or 532 nm. The laser light may be a CW wave (continuous wave), but may be a pulse wave from the viewpoint of preventing diffusion of heat and proceeding with baking instantaneously by irradiating a light beam with a high peak value. The width of one pulse of the pulse wave is preferably 1 to 100 nanoseconds, 2 to 50 nanoseconds, or 3 to 30 nanoseconds from the viewpoint of suppressing ablation of the film during light irradiation.

[0034] (Membrane penetration depth) In one embodiment, a light beam penetrates into the film containing a metal and / or metal oxide with an appropriate penetration depth. The penetration depth is the depth x of a film containing a metal and / or metal oxide, when a light beam is incident with a light intensity I0 in the thickness direction of the film, until the light intensity is attenuated to I0 / e due to the light absorption of the film. When the light absorbance of a film containing a metal and / or metal oxide at a certain wavelength is α, the light intensity I0 / e and x at that wavelength are expressed by the following formula: I0 / e=I0×e (-αx) Therefore, x and α satisfy the following formula: x=1 / α Satisfy the relationship.

[0035] In one embodiment, a film containing a metal and / or metal oxide is irradiated with laser light at a penetration depth of 0.25 μm to 10.00 μm. The penetration depth is more preferably 0.30 μm to 8.00 μm, even more preferably 0.35 μm to 6.00 μm, and most preferably 0.40 μm to 4.50 μm. When the penetration depth is 0.25 μm or more, the laser light penetrates well into the inside of the film, and not only the surface of the film but also the internal sintering and the formation of a conductor due to contact between particles proceed well, resulting in low resistance of the metal wiring. On the other hand, when the penetration depth is 10.00 μm or less, the light penetrates well into the inside of the film and is absorbed well, resulting in good formation of a conductor due to internal sintering and contact between particles, resulting in low resistance of the metal wiring.

[0036] The penetration depth can be adjusted by the content of the metal and / or metal oxide contained in the film containing the metal and / or metal oxide, the particle size when the metal and / or metal oxide is a particle, the amount of other components (organic substances, etc.), etc. For example, decreasing the content of the metal and / or metal oxide and decreasing the particle size tends to increase the penetration depth, while increasing the content and increasing the particle size tends to decrease the penetration depth. In addition, the presence of a light-absorbing organic material (for example, a phosphorus-containing organic compound described below) tends to decrease the penetration depth.

[0037] (power density) By adjusting the power density of the laser beam to an appropriate range, the amount of energy absorbed by the film can be controlled, and the formation of a conductor by internal sintering, contact between particles, etc. can be smoothly promoted. The power density of the laser beam is preferably 0.001 mW / μm 2 More than 2.000mW / μm 2 Less than or equal to 0.005mW / μm 2 More than 1.900mW / μm 2 or less than 0.010mW / μm 2 More than 1.800mW / μm 2 or less than 0.015mW / μm 2 More than 1.500mW / μm 2 The power density is less than 0.001mW / μm 2 If the resistance is 2.000 mW / μm or more, the film is well sintered and becomes conductive due to contact between particles, etc., and the metal wiring has low resistance. 2 When the thickness is equal to or less than 100 nm, carbonization or ablation of the film is unlikely to occur, and the desired metal wiring can be easily formed.

[0038] (spot diameter, overlap rate, scanning line spacing) The laser light may be irradiated to the film with a desired spot diameter. The spot diameter may be adjusted by the amount of deviation of the laser light from the focus. In one embodiment, the laser light is preferably irradiated on the film multiple times in an overlapping manner. For example, the laser light is repeatedly scanned on the film while overlapping in the line width direction of the scanning line. In this case, the overlap rate (i.e., the ratio in the scanning line width direction of the portion irradiated the first time to the portion irradiated the second time) is preferably 10% or more and 99% or less, or 20% or more and 95% or less, or 30% or more and 90% or less, or 40% or more and 85% or less. When the overlap rate is 10% or more, the formation of a conductor by sintering of metal and / or metal oxide, contact between particles, etc., proceeds well, and when it is 99% or less, wiring can be manufactured at an industrially practical production speed. The direction of the scanning line of the second irradiation may be the same direction as the scanning line of the first irradiation (i.e., one-way scanning) or the opposite direction (i.e., reciprocating scanning). The scanning line interval of the laser light may be set according to the purpose, for example, so that a desired overlap rate is obtained for a desired spot diameter.

[0039] (Defocus value) The defocus value may be appropriately specified to adjust the spot diameter to a desired range. In a preferred embodiment, the defocus value may be set in the range of -10.0 mm to 10.0 mm when the focusing position is set to 0 in the height in the irradiation direction of the laser light.

[0040] (Incidence angle) The incident angle of the laser light to the film is preferably 0 to 50 degrees, or 0 to 48 degrees, or 0 to 45 degrees. When the incident angle is 50 degrees or less, sintering of the film caused by the laser light being reflected on the surface of the film or the amount of light rays penetrating into the film being small, and insufficient formation of a conductor caused by contact between particles, etc. can be prevented, and the resistance value of the metal wiring can be made low and uniform.

[0041] (scanning speed) The scanning speed (V) of the laser light (unit: mm / sec) is calculated from the laser light scanning length (L) (unit: mm) calculated based on the shape of the circumscribed parallelogram and the desired scanning period (F) (unit: Hz) (e.g., 15 Hz) according to the following formula. Scanning speed (V) = scanning period (F) x scanning length (L)

[0042] (scanning direction) The laser beam scanning direction may be specified depending on the purpose, and may be, for example, the direction in which the maximum scanning length is the smallest, the direction in which the number of scans is the smallest, etc.

[0043] In one aspect, the scanning parameters include one or more selected from the group consisting of laser scanning speed, laser power density, and laser spot diameter.

[0044] In one aspect, a combination of values ​​of multiple parameter elements (e.g., laser scanning speed, laser output intensity, and laser spot diameter) may be one template. A plurality of such templates may be prepared, and one template selected from the plurality of templates may be assigned to a scanning area pattern. In a typical aspect, the same scanning parameters are applied in each irradiation area pattern, but different scanning parameters according to the site may be assigned in one irradiation area pattern.

[0045] The scanning parameters may be set in advance based on the results of a study of the relationship between the film properties and the laser light irradiation conditions suitable for the properties. In this embodiment, the film is irradiated with laser light to form a metal wiring, which is a fired product of the film. The film in this embodiment is a thin film containing metal and / or metal oxide, and in one aspect, further contains an organic substance such as a dispersant. In such a film, the fired state is greatly influenced by the laser light irradiation conditions. For example, when the scanning speed is slowed without changing the output intensity of the laser light, the film tends to be heated more significantly, but the degree of heating of the film varies depending on the film properties (chemical composition, thickness, laser light penetration length, form (presence of holes, etc.)). Therefore, it is desirable to select the scanning parameters appropriately according to the film properties. In one aspect, a plurality of data sets including film property data and scanning parameter data (for example, the above-mentioned template) associated with the film property data are generated and stored, and when assigning scanning parameters, the data set is read, and scanning parameters associated with film property data that is the same as or similar to the properties of the film actually used are selected and assigned to the scanning area pattern. Alternatively, the scanning parameters may be generated based on direct input of numerical values ​​from a user.

[0046] The scanning control signal may include information regarding the designation of the irradiation area pattern to be first irradiated with the laser light when there are multiple irradiation area patterns, the designation of the laser light scanning start position in the scanning area pattern, and the like.

[0047] [Irradiation step] In this step, the irradiation area is irradiated with laser light by scanning the irradiation target position of the laser light in the direction of the first side over the entire area of ​​the circumscribed parallelogram while moving in the direction of the second side adjacent to the first side according to the scanning area pattern and the scanning parameters assigned thereto. In a preferred embodiment, the direction of the first side is the long side direction of the parallelogram. According to the method of this embodiment, the scanning length of the irradiation target position can be leveled regardless of the shape of the irradiation area, so that low-resistance and highly reliable metal wiring can be formed in any desired shape.

[0048] The irradiation area may be set as a two-dimensional or three-dimensional area. The three-dimensional irradiation area may be specified on a three-dimensional shape pattern of the film surface, as described above with reference to Figures 4, 5, 6A and 6B.

[0049] The oxygen concentration in the atmosphere during irradiation is preferably 5% by volume or less, or 2% by volume or less, or 1% by volume or less. Although a lower oxygen concentration is more desirable, from the viewpoint of ease of process control, it may be, for example, 0.001% by volume or more, 0.01% by volume or more, or 0.05% by volume or more. For example, the metal wiring of this embodiment can be manufactured by the above-mentioned procedure.

[0050] <Substrate and film containing metal and / or metal oxide> Examples of a substrate and a film containing a metal and / or a metal oxide suitable for producing the metal wiring of this embodiment include the following.

[0051] [Base material] The shape of the substrate is not particularly limited as long as it constitutes a surface on which a film containing a metal and / or metal oxide is disposed. The substrate is preferably made of an insulating material to ensure electrical insulation from the metal wiring described below. However, it is not necessary that the entire substrate is made of an insulating material. It is sufficient that only the portion constituting the surface on which the film containing a metal and / or metal oxide is disposed is made of an insulating material.

[0052] The surface of the substrate on which the film containing a metal and / or metal oxide is disposed may be a flat or curved surface, or may be a surface including steps. More specifically, the substrate may be a substrate (e.g., a plate, a film, or a sheet) or a three-dimensional object (e.g., a housing, etc.). The plate is, for example, a support used in a circuit board such as a printed circuit board. The film or sheet is, for example, a base film that is a thin-film insulator used in a flexible printed circuit board.

[0053] Examples of the three-dimensional object include the housings of electrical devices such as mobile phone terminals, smartphones, smart glasses, televisions, personal computers, etc. Other examples of the three-dimensional object include dashboards, instrument panels, steering wheels, chassis, etc. in the automotive field.

[0054] Specific examples of the substrate include a substrate made of an inorganic material (hereinafter referred to as an "inorganic substrate") and a substrate made of a resin (hereinafter referred to as a "resin substrate").

[0055] The inorganic substrate is, for example, composed of glass, silicon, mica, sapphire, quartz, clay film, ceramic material, etc. As the resin substrate, polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN) are preferable because they have excellent adhesion to metal wiring, are easily distributed in the market, are available at low cost, and are advantageous from the viewpoint of business, and at least one selected from the group consisting of polypropylene (PP), polyamide (PA), acrylonitrile-butadiene-styrene (ABS), polyethylene (PE), polycarbonate (PC), polyacetal (POM), polybutylene terephthalate (PBT), modified polyphenylene ether (m-PPE), and polyphenylene sulfide (PPS) is preferable, especially in the case of a housing, because it has excellent adhesion to metal wiring, is excellent in moldability and mechanical strength after molding, and has heat resistance sufficient to withstand laser irradiation when forming metal wiring.

[0056] The thickness of the substrate can be 1 μm to 10 mm, and preferably 25 μm to 250 μm, when the substrate is, for example, a plate, film, or sheet. When the thickness of the substrate is 250 μm or less, the electronic device to be produced can be made lighter, more space-saving, and more flexible, which is preferable.

[0057] When the substrate is a three-dimensional object, its maximum dimension (i.e., the maximum length of one side) can be, for example, 1 μm to 10 mm, and preferably 200 μm to 5 mm. A substrate having a thickness in the above range has good mechanical strength and heat resistance after molding.

[0058] [Film containing metal and / or metal oxide] (Metals and / or Metal Oxides) The metal contained in the film containing a metal and / or a metal oxide is, for example, silver, copper, silicon, aluminum, zirconium, titanium, hafnium, tantalum, tin, chromium, cobalt, magnesium, manganese, molybdenum, nickel, tungsten, zinc, indium, tin, etc., and may be an alloy or a mixture containing two or more of these. In addition, examples of the metal oxide include oxides of the metals exemplified above, and copper oxide (CuO and Cu2O) is particularly preferable.

[0059] The metal and / or metal oxide may be in the form of a particle or a complex. In the case of a particle, it may have a core / shell structure. For example, the core and / or shell may be a metal and / or metal oxide, and the core and shell may contain different metals and / or metal oxides.

[0060] The particles may be, for example, fine particles containing copper oxide. The average primary particle diameter of the fine particles containing copper oxide is preferably 1 nm or more and 100 nm or less, more preferably 1 nm or more and 50 nm or less, and even more preferably 1 nm or more and 20 nm or less. The smaller the average primary particle diameter, the easier it is to control the penetration length of light rays, which will be described later, and therefore, it is preferable. The average primary particle diameter is a value measured by a transmission electron microscope or a scanning electron microscope. When the average primary particle diameter is 25 nm or less, a transmission electron microscope is used, and when it exceeds 25 nm, a scanning electron microscope is used.

[0061] (organic matter) The film containing a metal and / or metal oxide may contain an organic substance in addition to the metal and / or metal oxide. In one embodiment, the organic substance functions as a dispersant that improves the dispersibility of the metal and / or metal oxide. The organic substance may be capable of absorbing light.

[0062] Examples of the dispersant include organic substances having a number average molecular weight of 300 to 300,000. When the number average molecular weight is 300 or more, the insulating property is excellent and the contribution to improving the dispersion stability of the paste material as a material for a film containing a metal and / or metal oxide is large. In addition, when the number average molecular weight is 300,000 or less, the film containing a metal and / or metal oxide is easily baked by light irradiation, which is preferable. The dispersant preferably has a group having affinity for a metal or metal oxide, and from this viewpoint, a phosphorus-containing organic compound is preferable, and a polymeric phosphate ester is more preferable. The phosphorus-containing organic compound is also advantageous in that it can form an insulating region with electrical insulation between wiring patterns. In the present disclosure, the number average molecular weight is a value obtained by using gel permeation chromatography and converting it into standard polystyrene.

[0063] In the film containing a metal and / or metal oxide, the mass ratio of the content of the phosphorus-containing organic compound to the content of the metal and / or metal oxide is preferably 0.01 to 0.4, or 0.03 to 0.35, or 0.05 to 0.25, or 0.1 to 0.2. The above ranges are preferable in that the phosphorus-containing organic compound has a significant advantage in improving the light absorption and in adsorbing to the metal and / or metal oxide to fix them to the substrate.

[0064] The phosphorus-containing organic compound is preferably one that is easily decomposed or evaporated by light and / or heat. By using an organic substance that is easily decomposed or evaporated by light and / or heat, organic residues are less likely to remain after firing, and metal wiring with low resistivity can be obtained.

[0065] The decomposition temperature of the phosphorus-containing organic compound is not limited, but is preferably 600° C. or lower, more preferably 400° C. or lower, and even more preferably 300° C. or lower. From the viewpoint of the stability of the phosphorus-containing organic compound, the decomposition temperature may be preferably 160° C. or higher, 210° C. or higher, or 260° C. or higher.

[0066] The absorption characteristics of the phosphorus-containing organic compound are not limited, but it is preferable that the phosphorus-containing organic compound can absorb the light used in firing the film containing a metal and / or metal oxide. In one embodiment, it is preferable to use a phosphorus-containing organic compound that absorbs light of 355 nm, 405 nm, 445 nm, 450 nm, 532 nm, 1064 nm, etc., as the emission wavelength of laser light. When the substrate is a resin, it is preferable that the phosphorus-containing organic compound can absorb light of wavelengths of 355 nm, 405 nm, 445 nm, 450 nm, and / or 532 nm. In the above, the ability to absorb light means that the absorption coefficient measured by an ultraviolet-visible spectrophotometer is 0.10 cm -1 This means that it is more than or equal to this.

[0067] The structure of the phosphorus-containing organic compound is preferably a monoester or diester of phosphoric acid, since it has a hydroxyl group that has affinity for copper oxide. For example, the structure of the phosphorus-containing organic compound is represented by the following general formula (1): [ka] (In the formula, R is a monovalent organic group.) The phosphoric acid monoester represented by the following formula is preferred because it has excellent adsorption to copper oxide and adhesion to a substrate. Examples of R include substituted or unsubstituted hydrocarbon groups.

[0068] An example of a phosphoric acid monoester is represented by the following formula (2): [ka] Examples of the compound include compounds having a structure represented by the following formula:

[0069] An example of a phosphoric acid monoester is represented by the following formula (3): [ka] (In the formula, l is a number from 1 to 20, m is a number from 1 to 20, and n is a number from 1 to 20.) Compounds having a structure represented by the following formula are also exemplified.

[0070] In the formula, 1 may preferably be 1 to 15, or 1 to 10. In the formula, m may preferably be 1 to 15, or 1 to 10. In the formula, n may preferably be 1 to 15, or 1 to 10.

[0071] Examples of the organic structure of the phosphorus-containing organic compound include polyethylene glycol (PEG), polypropylene glycol (PPG), polyimide, polyester (e.g., polyethylene terephthalate (PET), polyethylene naphthalate (PEN)), polyethersulfone (PES), polycarbonate (PC), polyvinyl alcohol (PVA), polyvinyl butyral (PVB), polyacetal, polyarylate (PAR), polyamide (PA), polyamideimide (PAI), polyetherimide (PEI), polyphenylene ether (PPE), polyphenylene sulfide (PPS), polyetherketone (PEK), polyphthalamide (PPA), polyethernitrile (PENt), polybenzimidazole (PBI), polycarbodiimide, polymethacrylamide, nitrile rubber, acrylic rubber, polyethylene tetrafluoride, epoxy resin, phenol, etc. The polymer may have a structure derived from a compound such as polymethylmethacrylate resin (PMMA), polybutene, polypentene, ethylene-propylene copolymer, ethylene-butene-diene copolymer, polybutadiene, polyisoprene, ethylene-propylene-diene copolymer, butyl rubber, polymethylpentene (PMP), polystyrene (PS), styrene-butadiene copolymer, polyethylene (PE), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF), polyether ether ketone (PEEK), phenol novolac, benzocyclobutene, polyvinylphenol, polychloropyrene, polyoxymethylene, polysulfone (PSF), polysulfide, silicone resin, aldose, cellulose, amylose, pullulan, dextrin, glucan, fructan, chitin, etc. (specifically, the structure may be derived from a compound such as polystyrene, polyvinyl chloride (PS ...yl fluoride (PVDF), polyether ether ketone (PEEK), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF), polyether ether ketone (PEEK), polyvinyl chloride (PSF), polysulfide, silicone resin, aldose, cellulose, amylose, pullulan, dextrin, glucan, fructan, chitin, etc. (specifically, the structure may be derived from a compound such as polystyrene, polyvinyl chloride (PSF), polyvinyl phenol, polyvinyl chloride (PVDF), polyvinyl fluoride (PVDF), polyether A phosphorus-containing organic compound having a polymer skeleton selected from polyethylene glycol, polypropylene glycol, polyacetal, polybutene, and polysulfide is preferred because it is easily decomposed and is unlikely to leave a residue in the metal wiring obtained after firing.

[0072] As the phosphorus-containing organic compound, commercially available products can be used. Specifically, DISPERBYK (registered trademark)-102, DISPERBYK-103, DISPERBYK-106, DISPERBYK-109, DISPERBYK-110, DISPERBYK-111, DISPERBYK-118, DISPERBYK-140, DISPERBYK-145, DISPERBYK-168, DISPERBYK-180, DISPERBYK-182, DISPERBYK-187, DISPERBYK-190, DISPERBYK-191, DISPERBYK-193, DISPERBYK-194N, DISPERBYK-199, DISPERBYK-2000, DISPERBYK-2001, Examples of such materials include DISPERBYK-2008, DISPERBYK-2009, DISPERBYK-2010, DISPERBYK-2012, DISPERBYK-2013, DISPERBYK-2015, DISPERBYK-2022, DISPERBYK-2025, DISPERBYK-2050, DISPERBYK-2152, DISPERBYK-2055, DISPERBYK-2060, DISPERBYK-2061, DISPERBYK-2164, DISPERBYK-2096, DISPERBYK-2200, BYK-405, BYK-607, BYK-9076, BYK-9077, BYK-P105, Plysurf (registered trademark) M208F and Plysurf DBS manufactured by Daiichi Kogyo Seiyaku Co., Ltd. These may be used alone or in combination.

[0073] (Hydrazine and hydrazine hydrate) From the viewpoint of the reduction sintering property of the metal and / or metal oxide, the film containing the metal and / or metal oxide preferably contains hydrazine and / or hydrazine hydrate. Hydrazine and / or hydrazine hydrate can be contained in the film containing the metal and / or metal oxide. When the film contains hydrazine and / or hydrazine hydrate, the hydrazine and / or hydrazine hydrate functions as a reducing agent, and the resistance of the wiring obtained after light irradiation is further reduced. The content of hydrazine and / or hydrazine hydrate in the film is preferably within the following range based on the amount of hydrazine and on the mass basis with respect to the total content of the metal and / or metal oxide in the film. 0.0001≦[(hydrazine mass) / (total mass of metal and / or metal oxide)]≦0.10 When the mass ratio of hydrazine and / or hydrazine hydrate is 0.0001 or more, the resistance of the metal wiring is low, which is preferable, and when the mass ratio is 0.10 or less, the long-term stability of the structure is good, which is preferable.

[0074] The content of organic matter is preferably 0.1 mass% or more, or 0.5 mass% or more, or 1 mass% or more, and preferably 30 mass% or less, or 20 mass% or less, or 10 mass% or less, based on 100 mass% of the paste material used to form the film.

[0075] Specific examples of the solvent include alcohols (monohydric alcohols and polyhydric alcohols (e.g., glycols)), ethers of alcohols (e.g., glycols), esters of alcohols (e.g., glycols), etc. These may be used alone or in combination, and are selected in consideration of the volatility, coating equipment, solvent resistance of the substrate to be coated, etc. according to the coating method.

[0076] As the solvent, monoalcohols having 10 or less carbon atoms are more preferable. Among them, from the viewpoint of suppressing the decrease in dispersibility of metals and / or metal oxides and from the viewpoint of reducing the resistance value of wiring, it is more preferable that the monoalcohol has 8 or less carbon atoms. Among monoalcohols having 8 or less carbon atoms, monoalcohols having 2 to 4 carbon atoms, specifically, ethanol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, and t-butanol, are even more preferable because their dispersibility, volatility, and viscosity are particularly suitable for applying a paste material. These monoalcohols may also be used alone or in combination.

[0077] The amount of the solvent in 100% by mass of the paste material used to form the film is preferably 30% by mass to 95% by mass, more preferably 40% by mass to 95% by mass, and most preferably 50% by mass to 90% by mass.

[0078] The paste material used to form the film may further contain a reducing agent. When the paste material contains a reducing agent, it is preferable because wiring with particularly low resistance can be obtained. As the reducing agent, the above-mentioned hydrazine and / or hydrazine hydrate is preferable. The content of the reducing agent is preferably 0.01 mass% or more, or 0.02 mass% or more, or 0.05 mass% or more, and preferably 30 mass% or less, or 10 mass% or less, or 5 mass% or less, based on 100 mass% of the paste material.

[0079] <Characteristics of metal wiring> The metal wiring produced in this embodiment may have the following exemplary characteristics.

[0080] In one embodiment, the thickness of the metal wiring produced in the present disclosure may preferably be 0.1 μm or more, or 0.5 μm or more, or 1 μm or more, and may preferably be 20 μm or less, or 10 μm or less, or 8 μm or less.

[0081] In one embodiment, the surface of the metal wiring produced by the present disclosure has a thickness of 0.3 μm. 2 More than 700μm 2In order to reduce the occurrence of abnormalities on the metal wiring, the opening area of ​​the hole may be 0.3 μm or less in one embodiment. 2 More than 700μm 2 Less than or equal to 0.3 μm, preferably 2 More than 600μm 2 Less than or equal to 0.5 μm, more preferably 2 More than 500μm 2 The following is the result.

[0082] In one embodiment, the ratio of the surface area of ​​the metal wiring to the surface area of ​​the metal wiring is 0.3 μm 2 More than 700μm 2 The area ratio of holes having the following opening area is 0.5% or more and 70% or less. From the viewpoint of reducing abnormal parts occurring on the metal wiring, the above area ratio is 0.5% or more and 70% or less in one embodiment, preferably 1% or more and 50% or less, more preferably 1.5% or more and 30% or less, even more preferably 2% or more and 25% or less, even more preferably 2.5% or more and 20% or less, and even more preferably 3% or more and 20% or less.

[0083] When irradiated with laser light, the film usually undergoes volumetric contraction. However, in metal wiring in which the area ratio of the holes is within the above-mentioned range, the stress caused when the film undergoes volumetric contraction when irradiated with laser light is alleviated, or the heat generated during irradiation with laser light is dissipated outside the film, so that abnormalities such as cracks and partial scorching of the substrate can be reduced.

[0084] The cross section of the metal wiring is 0.3 μm 2 More than 700μm 2 It is preferable that there is at least one hole having a cross-sectional area of ​​0.3 μm or less. From the viewpoint of reducing abnormalities occurring on the metal wiring, the cross-sectional area of ​​the hole is preferably 0.3 μm or less. 2 More than 700μm 2 Less than or equal to 0.3 μm, more preferably 0.3 μm 2 More than 600μm 2 Less than 0.5 μm, more preferably 0.5 μm 2 More than 500μm 2When holes are present in the cross-sectional direction of the metal wiring, the stress caused when the film shrinks in volume during laser light irradiation is alleviated, or the heat during laser light irradiation is dissipated to the outside of the film, so that abnormal parts such as cracks and partial scorching of the substrate can be reduced.

[0085] The confirmation of the presence of holes having the above opening area or cross-sectional area and the calculation of the above area ratio are carried out using a scanning electron microscope (SEM) under the following conditions. Measurement equipment: Scanning electron microscope (e.g., Hitachi High-Tech Corporation, FlexSEM1000) Measurement conditions: Accelerating voltage 5 kV Measurement mode: Secondary electron observation (for surface observation), or backscattered electron observation (for cross-sectional observation) Observation magnification: 2000x (for surface observation) or 2500x (for cross-sectional observation) Field of view size for observation and image analysis: 40 μm × 40 μm (for surface observation), or a rectangle of [metal wiring thickness] × [length 40 μm in the direction perpendicular to the thickness direction]

[0086] The area of ​​the holes and the above-mentioned area ratio are values ​​obtained by image analysis using the analysis software ImageJ (open source, public domain image processing software) from the SEM image. Specifically, the image is binarized (in one embodiment, the threshold value is 80) so that the holes can be identified, the area ratio between the holes and the parts other than the holes is obtained, and the above-mentioned area ratio is calculated.

[0087] The size of the holes may be controlled by the scanning speed and spot diameter of the laser light during laser light irradiation. Increasing the scanning speed of the laser light tends to increase the size of the holes, while decreasing the scanning speed of the laser light tends to decrease the size of the holes. In addition, increasing the spot diameter tends to increase the size of the holes, while decreasing the spot diameter tends to decrease the size of the holes.

[0088] The above-mentioned area ratio of the holes on the surface of the metal wiring may be controlled by the overlap ratio when the laser light is irradiated in an overlapping manner as described above. A lower overlap ratio tends to increase the area ratio, and a higher overlap ratio tends to decrease the area ratio.

[0089] <Metal wiring manufacturing device, laser light irradiation control device, laser light irradiation control program> One aspect of the present invention provides a metal wiring manufacturing apparatus for forming metal wiring in a structure including a substrate and a film including a metal and / or metal oxide disposed on the substrate by irradiating a laser beam to a preset irradiation area of ​​the film. Another aspect of the present invention provides a laser oscillator and a laser beam scanning device of a metal wiring manufacturing apparatus for irradiating laser beams onto a preset irradiation area of ​​a film containing a metal and / or metal oxide, as well as a laser beam irradiation control device that optionally controls mechanisms such as an output adjustment mechanism and a spot adjustment mechanism, and a laser beam control program.

[0090] FIG. 7 is a schematic diagram showing a configuration example of the metal wiring manufacturing apparatus of this embodiment, and FIG. 8 is a block diagram showing a configuration example of the metal wiring manufacturing apparatus of this embodiment. With reference to FIGS. 7 and 8, in one embodiment, the metal wiring manufacturing apparatus 100 includes a structure holding unit 101 for holding a structure, a laser oscillator 102 for generating a laser beam, a laser beam scanning unit 103 for scanning the laser beam emitted from the laser oscillator, and a processing unit 104 for controlling the laser oscillator 102 and the laser beam scanning unit 103, and typically further includes a storage device 105, a display device 106, an input device 107, and an interface device 108, which is also one embodiment of the output unit of the present disclosure. The metal wiring manufacturing apparatus 100 may further include mechanisms such as an output adjustment mechanism (not shown) and a spot adjustment mechanism (not shown). The form of the apparatus constituting the metal wiring manufacturing apparatus 100 is not limited, and each apparatus may constitute a separate device, or two or more apparatuses may constitute one device.

[0091] The processing device 104, together with the storage device 105, the display device 106, the input device 107, and the interface device 108, constitutes a laser light irradiation control device 400. The laser light irradiation control device 400 may be configured as dedicated hardware, or a program may be installed in a general-purpose computer to function as the laser light irradiation control device 400. The processing device 104 outputs a scanning control signal via the interface device 108 to the laser oscillation device 102 and the laser light scanning device 103, and optionally to mechanisms such as an output adjustment mechanism and a spot adjustment mechanism, to control the operations of these devices.

[0092] <Structure holding section 101> The structure holder 101 holds the structure 11 including the base material 11a and the film 11b, and in one embodiment, is a sample chamber. The sample chamber may have a window. The window has optical transparency that allows the laser light La to reach the film 11b arranged on the base material 11a through the window. In one embodiment, the light transmittance of the window at a wavelength of 355 nm may be 80% or more, and preferably 85% or more, or 90% or more. The light transmittance is ideally 100%, but may be, for example, 98% or less, or 95% or less from the viewpoint of ease of forming the window. The light transmittance is a value measured by an ultraviolet-visible spectrophotometer. The sample chamber may have an inert gas inlet, and may be configured such that, for example, an inert gas generated by an inert gas generator (not shown) is introduced into the sample chamber through the inert gas inlet. The structure holder 101 may be provided with a drive mechanism (e.g., a motor, etc.) that moves or tilts the structure in three-dimensional XYZ directions.

[0093] <Laser Oscillation Device 102> The laser oscillator 102 is configured to emit a laser beam of a desired wavelength. The laser oscillator 102 is, for example, a laser oscillator. The laser light source may be YAG (yttrium aluminum garnet), YVO4 (yttrium vanadate), Yb (ytterbium), a semiconductor (GaAs, GaAlAs, GaInAs), carbon dioxide gas, a fiber laser, or the like. As the laser beam, not only a fundamental wave but also a harmonic wave may be extracted as necessary. The laser oscillator may include a cooling device or the like. In one embodiment, the laser oscillator may be configured to emit a pulsed beam. The width of one pulse of the pulsed wave may be preferably 1 to 100 nanoseconds, or 2 to 50 nanoseconds, or 3 to 30 nanoseconds. In this case, the laser oscillator may include a pulse suppression mechanism that suppresses the initial pulse of the pulsed beam. The pulse suppression mechanism prevents the film from being irradiated with an excessively large pulsed beam at the start of emission, thereby preventing ablation or carbonization. The pulse suppression mechanism may have, for example, a first pulse suppression function (FPS function), that is, a function of predicting the excess output of the initial pulse in advance and reducing the excess output.

[0094] <Laser light scanning device 103> The laser light scanning device 103 scans the laser light La emitted from the laser oscillation device 102. In one embodiment, the laser light scanning device is a galvanometer scanner including a galvanometer motor and a galvanometer mirror, and FIG. 7 illustrates the galvanometer scanner. The galvanometer scanner as the laser light scanning device 103 includes an X-axis galvanometer mirror 103a, an X-axis galvanometer motor 103b, a Y-axis galvanometer mirror 103c, and a Y-axis galvanometer motor 103d. The galvanometer scanner may include an fθ lens (not shown), a Z-axis adjustment drive lens (not shown), and the like. The X-axis galvanometer motor 103b and the Y-axis galvanometer motor 103d are electrically connected to the processing device 104.

[0095] The galvano scanner is configured to be capable of controlling the rotation angle and rotation speed of the X-axis galvano motor 103b and the Y-axis galvano motor 103d in accordance with a scanning control signal from the processing device 104. The laser light La is scanned by the laser light scanning device 103 and irradiated onto the surface of the film 11b.

[0096] In the above, a galvano scanner is exemplified as the laser beam scanning device 103, but a laser beam scanning device other than a galvano scanner can also be used. For example, the laser beam scanning device 103 may use an XY stage, which can move the structure 11 in both the X-axis direction and the Y-axis direction, as a mounting table instead of the galvano scanner, and move the structure 11 instead of moving the irradiation point p of the laser beam La.

[0097] The galvanometer scanner as laser light scanning device 103 shown in FIG. 7 uses X-axis galvanometer mirror 103a and Y-axis galvanometer mirror 103c for movement in the X-axis and Y-axis directions, respectively. However, it is also possible to use a galvanometer mirror for either the X-axis or the Y-axis, for example, to use a galvanometer mirror for movement only in the X-axis direction and a motor of a mounting table (not shown) on which structure 11 is placed, for movement in the Y-axis direction.

[0098] <Output adjustment mechanism> The metal wiring manufacturing apparatus may have an output adjustment mechanism (not shown) for adjusting the output of the laser light. By adjusting the output, it is possible to suppress ablation or carbonization during laser light irradiation. One example of the output adjustment mechanism is an attenuator disposed on the path of the laser light. The attenuator is electrically connected to the processing device 104, and can change the output value to an arbitrary value in response to a control signal from the processing device 104. Alternatively, the output adjustment mechanism may be configured so that the output value can be changed by manual operation.

[0099] <Spot adjustment mechanism> The metal wiring manufacturing apparatus may have a spot adjustment mechanism (not shown) for adjusting the spot diameter at the focal position of the laser light. The spot adjustment mechanism prevents ablation or carbonization by controlling the concentration density of the laser light to adjust the spot diameter. An example of the spot adjustment mechanism is a device for expanding or contracting the diameter of the light beam incident on the galvano scanner, and for example, a beam expander can be used. By changing the diameter of the laser light, the spot diameter at the focal point focused by the focusing lens can be changed. By expanding the diameter of the laser light, the spot diameter becomes smaller, and by contracting the diameter of the laser light, the spot diameter becomes larger. In one aspect, the beam expander may be controlled according to the laser light irradiation position in the Z-axis direction.

[0100] <Processing device 104>

[0101] The processing device 104 is, for example, a central processing unit (CPU). The processing device 104 may be, for example, a digital signal processor (DSP), a large scale integration (LSI), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), or the like.

[0102] The processing device 104 controls the laser oscillation device 102 and the laser light scanning device 103, and further controls the power adjustment mechanism and / or the spot adjustment mechanism, if present. The processing device 104: A scanning area pattern composed of a two-dimensional irradiation area pattern and a non-irradiation area pattern which is an area other than the irradiation area pattern within a circumscribed parallelogram of the irradiation area pattern; and Scanning parameters assigned to the scan area pattern; A scanning control signal according to the above is output to the laser oscillation device 102 and the laser light scanning device 103, and any mechanisms such as a power adjustment mechanism and a spot adjustment mechanism, via an interface device 108 as an output unit. This causes the laser oscillation device 102 and the laser light scanning device 103, and any mechanisms such as a power adjustment mechanism and a spot adjustment mechanism, to operate in accordance with the scanning control signal so that the irradiation target position p of the laser light La is moved in the direction of a second side adjacent to the first side (for example, the Y-axis direction in FIG. 7) while scanning in the direction of a first side of the parallelogram (for example, the X-axis direction in FIG. 7) over the entire area within the parallelogram.

[0103] In one embodiment, the processing device 104 functions as a coordinate data generating unit 410 and a scan control signal generating unit 420 by reading each program stored in the storage device 105 and operating in accordance with the read programs.

[0104] The coordinate data generation unit 410 specifies a circumscribing parallelogram for the input two-dimensional irradiation area pattern, specifies the area within the circumscribing parallelogram other than the irradiation area pattern as a non-irradiation area pattern, and generates coordinate data for a scanning area pattern composed of the irradiation area pattern and the non-irradiation area pattern.

[0105] In one embodiment, the coordinate data generating unit 410 includes a pattern generating means 411 , a graphic designating means 412 , a graphic evaluating means 413 , and a data converting means 414 .

[0106] The scan control signal generating unit 420 assigns preset scan parameters to the coordinate data generated by the coordinate data generating unit 410, and generates a scan control signal in accordance with the coordinate data and the scan parameters.

[0107] The interface device 108 as an output unit outputs the scan control signal generated by the scan control signal generating unit 420 to the laser oscillation device 102 and the laser light scanning device 103, and optionally to mechanisms such as an output adjustment mechanism and a spot adjustment mechanism.

[0108] <Storage device 105> The storage device 105 includes a memory device such as a RAM (Random Access Memory) or a ROM (Read Only Memory), a fixed disk device such as a hard disk, or a portable storage device such as a flexible disk or an optical disk. The storage device 105 also stores computer programs, databases, tables, and the like used for various processes of the metal wiring manufacturing apparatus 100 or the laser light irradiation control device 400. The computer programs may be installed in the storage device 105 from a computer-readable portable recording medium using a known setup program or the like. The portable recording medium is, for example, a CD-ROM (compact disc read only memory), a DVD-ROM (digital versatile disc read only memory), or the like.

[0109] The storage device 105 stores a laser light irradiation control program consisting of a coordinate data generation program, a scan control signal generation program, and a scan control signal output program. Each of these programs is a functional module implemented by software running on a processor. The program stored in the storage device 105 causes the laser light irradiation control device to execute the following operations: specify a circumscribed parallelogram for the input two-dimensional irradiation area pattern, and further specify an area other than the irradiation area pattern in the circumscribed parallelogram as a non-irradiation area pattern; generate coordinate data of a scanning area pattern consisting of the irradiation area pattern and the non-irradiation area pattern; assign preset scanning parameters to the coordinate data; generate a scan control signal according to the coordinate data and the scan parameters; and output a scan control signal.

[0110] <Display device 106, input device 107, interface device 108> The display device 106 may be a display (such as an organic EL display) or the like, and displays information input to the input device 107, the state of the processing device 104, and the like. The input device 107 may be an input device such as a keyboard or a mouse, and accepts input from a user. The interface device 108 may be a hardware interface such as a USB, a network interface such as a wired LAN (Local Area Network) or a wireless LAN, etc., and enables communication between the laser oscillation device 102 and the laser light scanning device 103 as well as any other mechanisms and the processing device 104.

[0111] <Laser light irradiation control process> 9A to 9C are flowcharts for explaining the processing executed by the laser light irradiation control program of this embodiment. Below, examples of the operations of the metal wiring manufacturing apparatus 100 and the laser light irradiation control device 400 will be explained with reference to the flowcharts shown in Figs. 9A to 9C. The flow of the operations explained below is executed mainly by the processing device 104 in cooperation with each element of the metal wiring manufacturing apparatus 100 based on a program stored in advance in the storage device 105.

[0112] First, the pattern generating means 411 generates an irradiation area pattern (step S101). The irradiation area pattern is generated by input from an external device in which irradiation area pattern information is stored in advance, input by a user through drawing or the like, reading out irradiation area pattern information previously stored in the storage device 105, or the like.

[0113] In one embodiment, the irradiation area pattern may be generated by the following procedure. Referring to FIG. 9B, the pattern generating means 411 first generates a two-dimensional base pattern having an X-axis length A1 and a Y-axis length B1 (step S11), and generates an XYZ three-dimensional shape pattern of the film surface (step S12). The XYZ three-dimensional shape pattern may be generated based on shape information acquired by an image recognition device such as an image sensor. Next, the pattern generating means 411 projects the two-dimensional base pattern onto the XYZ three-dimensional shape pattern to generate an irradiation area determination three-dimensional pattern (step S13), measures the length B2 of the irradiation area determination three-dimensional pattern in a direction perpendicular to the X-axis direction (step S14), and multiplies the Y-axis length B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern (step S15), and ends the series of steps. This reduced correction pattern is the irradiation area pattern.

[0114] 9A again, after step S101, the figure designation means 412 designates a circumscribing parallelogram of the irradiation area pattern (step S102). When the irradiation area pattern is composed of two or more closed figures, the figure designation means 412 determines whether to designate one circumscribing parallelogram for the two or more closed figures or one circumscribing parallelogram for one closed figure based on the settings of the coordinate data generation program or an input from the user.

[0115] Fig. 9C shows a more preferable processing example of step S102. Referring to Fig. 9C, the graphic designation means 412 first generates a circumscribed parallelogram (step S21), and then determines whether or not the specified circumscribed parallelogram is limited to a rectangle based on the settings of the coordinate data generation program or an input from the user (step S22).

[0116] In step S22, if the circumscribed parallelogram to be specified is limited to a rectangle, the graphic evaluation means 413 judges whether the circumscribed parallelogram is a rectangle or not (step S23), and if it is not limited to a rectangle, the graphic designation means 412 determines whether the circumscribed parallelogram to be specified is limited to a minimum circumscribed parallelogram or not based on the settings of the coordinate data generation program or input from the user without going through step S23 (step S24).

[0117] In step S23, if the circumscribing parallelogram is a rectangle, the process proceeds to step S24, and if the circumscribing parallelogram is not a rectangle, the process returns to step S21.

[0118] In the above step S24, if the specified circumscribed parallelogram is to be limited to the minimum circumscribed parallelogram, the graphic evaluation means 413 judges whether the circumscribed parallelogram is the minimum or not (step S25), and if it is not to be limited to the minimum circumscribed parallelogram, the process proceeds to determining the circumscribed parallelogram (step S26) without going through step S25, and the series of steps is terminated.

[0119] In step S25, if the circumscribed parallelogram is the smallest, the process proceeds to step S26 and ends the series of steps, and if it is not the smallest, the process returns to step S21.

[0120] In step S102, the circumscribing parallelogram may be designated by the user. In step S102 according to one aspect, the figure designation means 412 outputs shape data of the irradiation region pattern, and obtains shape data of the circumscribing parallelogram.

[0121] Referring again to FIG. 9A, following step S102, the graphic designation means 412 designates the area other than the irradiation area pattern within the circumscribed parallelogram designated in step S102 as a non-irradiation area pattern (step S103).

[0122] The pattern generating means 411 generates a scanning area pattern based on the irradiation area pattern generated in step S101 and the non-irradiation area pattern designated in step S103 (step S104).

[0123] After step S104, the pattern generating means 411 determines whether or not to execute projection of the scanning area pattern onto the three-dimensional shape pattern of the film surface based on the settings of the coordinate data generating program or an input from the user (step S105).

[0124] If projection processing is performed in step S105, the pattern generating means 411 generates a three-dimensional shape pattern of the film surface (step S106), and projects the scanning area pattern onto the three-dimensional shape pattern to generate a three-dimensional scanning area pattern (step S107). The three-dimensional shape pattern may be generated based on shape information acquired by an image recognition device such as an image sensor, but if the three-dimensional shape pattern of the film surface has already been generated in the above-mentioned step S11, that pattern may be used.

[0125] The data conversion means 414 acquires the data of the three-dimensional scanning area pattern generated in step S107, converts it into coordinate data, and generates coordinate data indicating the three-dimensional scanning area pattern (step S108).

[0126] On the other hand, if no projection processing is performed in step S105, the data conversion means 414 acquires the data of the two-dimensional scanning area pattern generated in step S104, converts it into coordinate data, and generates coordinate data indicating the two-dimensional scanning area pattern (step S108).

[0127] In one embodiment, the processes of steps S105 to S107 are omitted, and the pattern generating means 411 does not need to determine whether or not to execute projection of the scanning area pattern onto the three-dimensional shape pattern of the film surface.

[0128] Next, the scanning control signal generating unit 420 generates scanning parameters that define the laser light irradiation conditions by input from an external device in which scanning parameter information is stored in advance, input from a user, reading out scanning parameter information stored in advance in the storage device 105, etc. (Step S109). The scanning parameters include a scanning length that is the total width of a parallelogram, laser light emission to the irradiation area pattern, and laser light non-emission to the non-irradiation area pattern. In one aspect, the scanning parameters include on / off switching of a laser oscillation device for controlling laser light emission and non-laser light non-emission.

[0129] The scanning control signal generating unit 420 generates a scanning control signal by assigning the scanning parameters generated in step S109 to the coordinate data generated in step S108 (step S110). In one embodiment, the scanning parameters assigned to the non-irradiation area pattern are different from the scanning parameters assigned to the irradiation area pattern only in that the laser light is not emitted. That is, in one embodiment, the scanning control signal generating unit 420 assigns the same scanning parameters to the irradiation area pattern and the non-irradiation area except for the on / off switching of the laser oscillation device.

[0130] The interface device 108, acting as an output section, outputs the scanning control signal generated in step S110 to the laser oscillator 102 and laser light scanning device 103 of the metal wiring manufacturing apparatus 100, and optionally to mechanisms such as an output adjustment mechanism and a spot adjustment mechanism (step S111), thereby completing the series of steps.

[0131] In the metal wiring manufacturing apparatus, laser light irradiation control device, and laser light irradiation control program disclosed herein, specific examples of various aspects other than those described above (e.g., details of generation of scanning area pattern, scanning parameters, etc.) may be similar to those described above in <Metal wiring manufacturing method>, and the description will not be repeated here.

[0132] <Recording media or recording devices> One aspect of the present invention also provides a computer-readable recording medium or recording device that stores the laser light irradiation control program of the present disclosure. The computer may have a general hardware configuration including a CPU, a main memory, a storage, an input / output device, a hardware interface, and the like. The recording medium may be a memory device such as a RAM or a ROM, or a portable storage device such as a CD-ROM, a DVD-ROM, or an optical disk. The above program includes those that are stored in the recording medium and distributed, as well as those that are distributed by downloading through a network line such as the Internet. The recording device may be a general-purpose or dedicated device in which the above program is implemented in an executable state in the form of software, firmware, or the like. Each process and function included in the program may be executed by a program software that can be executed by a computer, or the process of each part may be realized by a predetermined hardware, or a form in which the program software and a partial hardware module that realizes some elements of the hardware are mixed. EXAMPLES

[0133] The following examples further illustrate exemplary embodiments of the present invention, but the present invention is not limited to these examples.

[0134] [Example 1] (Preparation of paste material) 80 g of copper(II) acetate monohydrate (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.) was dissolved in a mixed solvent consisting of 800 g of water and 400 g of 1,2-propylene glycol (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.), 20 g of hydrazine hydrate (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.) was added, and the mixture was stirred. Then, the supernatant and precipitate were separated using centrifugation.

[0135] 0.4 g of DISPERBYK-145 (trade name, manufactured by BYK-Chemie) (BYK-145) as a phosphorus-containing organic compound and 6.6 g of ethanol (manufactured by Fujifilm Wako Pure Chemical Industries) as a dispersion medium were added to 2.8 g of the obtained precipitate, and dispersed using a homogenizer. Dilution and concentration with ethanol were further repeated, thereby obtaining a paste material containing cuprous oxide fine particles including cuprous oxide (copper (I) oxide). The final composition was 2.8 g of precipitate, 0.4 g of BYK-145, 6.6 g of ethanol, and 0.01 g of hydrazine hydrate.

[0136] (Membrane formation) A polycarbonate substrate was prepared as the base material, and the surface was subjected to UV ozone treatment. The paste material was then spin-coated (500 rpm x 30 seconds), dried at 25°C for 10 minutes, and then dried at 60°C for 2 hours to obtain Structure 1, in which a film with a thickness of 3.0 μm was formed on the base material.

[0137] (Preparation of metal wiring manufacturing equipment) A metal wiring manufacturing apparatus was prepared, which consisted of a laser oscillator Talon355 manufactured by SpectraPhysics, a galvanometer scanner YD-300 manufactured by Yaskawa Electric, a nitrogen generator SUF-500 manufactured by Satako, a box-shaped sample chamber made of aluminum alloy A5052 with a glass window attached to one side, a nitrogen gas inlet and an exhaust gas outlet, and an oxygen concentration meter installed inside, and a computer ZBook 15 G5 manufactured by Hewlett-Packard. The light transmittance of the glass in the window at a wavelength of 355 nm was measured using an ultraviolet-visible spectrophotometer (Shimadzu Corporation, UV-3600), and was found to be 92.2%.

[0138] The metal wiring manufacturing equipment was equipped with a computer-controlled attenuator to adjust the output of the laser light. The laser oscillator also had an internal FPS function to prevent an excessive initial pulse from being generated at the start of emission. Furthermore, a beam expander was installed before the laser light was introduced into the galvano scanner, and the size of the spot diameter at the focal position was controlled by expanding or reducing the diameter of the laser light.

[0139] (Sample installation) Structure 1 was placed in the sample chamber. Nitrogen gas, which is an inert gas, was allowed to flow into the sample chamber until the oxygen concentration measured by an oxygen concentration meter installed in the sample chamber reached 1 mass % or less.

[0140] (Laser firing and electrical conductivity evaluation) A circumscribing parallelogram A was specified for the L-shaped irradiation area pattern a shown in FIG. 10A. The scanning parameters were set in the software so that the laser beam irradiation position was moved 6 mm in the scanning direction (longitudinal direction with a length of 6 mm) at a maximum speed of 30 mm / sec starting from point p (first irradiation), then moved 30 μm in a direction perpendicular to the scanning direction and moved again at a maximum speed of 30 mm / sec in the scanning direction (second irradiation). In this way, the irradiation position was moved 3 mm in the direction perpendicular to the scanning direction.

[0141] Next, the scanning parameters were set by the software so that the laser beam irradiation position was moved 1 mm in the scanning direction at a maximum speed of 30 mm / sec, moved 5 mm in the same scanning direction at a maximum speed of 30 mm / sec without irradiating the laser beam (pause section b), moved 30 μm in a direction perpendicular to the scanning direction, and then moved 1 mm in the scanning direction at a maximum speed of 30 mm / sec again, and moved 5 mm in the same scanning direction at a maximum speed of 30 mm / sec without irradiating the laser beam (pause section b). Other scanning parameters were central wavelength 355 nm, frequency 300 kHz, pulse width 15 ns, power 950 mW, and power density 0.06 mW / μm 2 It was decided.

[0142] Under the above laser light irradiation conditions, a copper-containing metal wiring having the dimensions shown in FIG. 10A was obtained. The conductivity of the obtained metal wiring was evaluated using a digital multimeter AD7461 (manufactured by ADVANTEST Co., Ltd.) For the evaluation, the metal wiring was cut into part c and part d along the cutting line C shown in FIG. The resistance of part c (6 mm x 3 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 0.40 Ω (average value of three measurements). The volume resistivity was also found to be 30.0 μΩ cm. The resistance value of part d (2 mm x 1 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was 0.39 Ω (average value of three measurements). The volume resistivity was 29.3 μΩ cm. Part c and part d showed almost the same volume resistivity, confirming that metal wiring with little resistance variation was obtained.

[0143] (overlap rate) The spot diameter of the laser light used in Example 1 was measured using a Beam Profiler SP928 manufactured by Ophir, and was found to be 142 μm in diameter. The overlap rate of the scanning lines during scanning in Example 1 was calculated to be 78.9%.

[0144] [Comparative Example 1] Samples were produced and resistance values ​​were measured in the same manner as in Example 1, except for the setting of the laser light irradiation pattern. For the L-shaped closed figure pattern shown in Figure 10A, the scanning parameters were set by the software so that the irradiation position of the laser light was moved 6 mm in the scanning direction (longitudinal direction) at a maximum speed of 30 mm / sec (first irradiation) starting from point p, then moved 30 μm in the direction perpendicular to the scanning direction and moved again at a maximum speed of 30 mm / sec (second irradiation). In this way, it was moved 3 mm in the direction perpendicular to the scanning direction. Next, the scanning parameters were set in the software so that the irradiation position of the laser light was moved 1 mm in the scanning direction at a maximum speed of 30 mm / s, then moved 30 μm in the direction perpendicular to the scanning direction, and then moved again at a maximum speed of 30 mm / s in the scanning direction. Other scanning parameters were central wavelength 355 nm, frequency 300 kHz, pulse width 15 ns, power 950 mW, power density 0.06 mW / μm 2 It was decided. Under the above laser light irradiation conditions, a copper-containing metal wiring having the dimensions shown in FIG. 10A was obtained.

[0145] The conductivity of the obtained metal wiring was evaluated using a digital multimeter AD7461 (manufactured by ADVANTEST Co., Ltd.) For the evaluation, the metal wiring was cut into part d and part d along the cutting line C shown in FIG. The resistance of part c (6 mm x 3 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 0.42 Ω (average value of three measurements). The volume resistivity was also found to be 31.5 μΩ cm. The membrane in part d (2 mm x 1 mm) had been blown away, making it impossible to measure resistance.

[0146] [Example 2] The spot diameter of the laser light used was 33 μm, the output was 80 mW, and the output density was 0.09 mW / μm. 2 The formation of metal wiring, evaluation of the spot diameter and overlap rate, and evaluation of electrical conductivity were performed in the same manner as in Example 1, except that the above-mentioned conditions were met. The overlap rate of the scan lines was calculated to be 9.1%. The resistance of part c (6 mm x 3 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 1.07 Ω (average value of three measurements). The volume resistivity was also found to be 80.3 μΩ cm. The resistance value of part d (2 mm x 1 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was 0.98 Ω (average value of three measurements). The volume resistivity was 73.5 μΩ cm. Although a difference in volume resistivity was observed between part c and part d, it was confirmed that metal wiring with relatively little resistance variation was obtained.

[0147] [Example 3] The formation of metal wiring, evaluation of the spot diameter and overlap rate, and evaluation of electrical conductivity were carried out in the same manner as in Example 2, except that the value of the movement in the direction perpendicular to the scanning direction was set to 20 μm. The overlap rate of the scan lines was calculated to be 39.4%. The resistance of part c (6 mm x 3 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 0.34 Ω (average value of three measurements). The volume resistivity was also found to be 25.5 μΩ cm. The resistance value of part d (2 mm x 1 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was 0.35 Ω (average value of three measurements). The volume resistivity was 26.3 μΩ cm. Part c and part d showed almost the same volume resistivity, confirming that metal wiring with little resistance variation was obtained.

[0148] [Example 4] The spot diameter of the laser light used was 142 μm, the output was 350 mW, and the output density was 0.02 mW / μm. 2 The formation of metal wiring, evaluation of the spot diameter and overlap rate, and evaluation of electrical conductivity were performed in the same manner as in Example 1, except that the above-mentioned conditions were satisfied. The overlap rate of the scan lines was calculated to be 99.2%. The resistance of part c (6 mm x 3 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 1.61 Ω (average value of three measurements). The volume resistivity was also found to be 120.8 μΩ cm. The resistance value of part d (2 mm x 1 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 2.21 Ω (average value of three measurements). The volume resistivity was also found to be 165.8 μΩ cm. Although a difference in volume resistivity was observed between part c and part d, it was confirmed that metal wiring with relatively little resistance variation was obtained.

[0149] [Example 5] (Formation of film on three-dimensional shape) A glass cylinder with a diameter of 50 mm was prepared as a substrate, which was immersed in water and ultrasonically cleaned for 5 minutes, then immersed in ethanol and ultrasonically cleaned for 5 minutes and dried, after which the surface was subjected to UV ozone treatment for 5 minutes, and the glass cylinder was immersed in a container filled with the paste material prepared in Example 1 and pulled out. It was further dried at 25°C for 5 minutes, and then dried in a dryer set at 90°C for 2 hours to obtain Structure 2 in which a 1.8 μm coating film was formed on the surface of the glass cylinder.

[0150] (Setting circumscribed parallelogram) A circumscribing parallelogram 1 was set so as to include the long and short sides of the same wiring pattern (hereinafter referred to as wiring pattern 1) as in Example 1. Similarly, a circumscribing parallelogram 2 was set so as to include the long and short sides of a wiring pattern (hereinafter referred to as wiring pattern 2) that is symmetrical to wiring pattern 1.

[0151] (Projection of illumination area pattern) The above-mentioned irradiation area pattern including the circumscribing parallelograms 1 and 2 was projected onto the surface shape of the coating film of a glass cylinder with a diameter of 50 mm to create a three-dimensional irradiation area pattern X.

[0152] (Laser firing and electrical conductivity evaluation) The position of the glass cylinder was adjusted so that the spot diameter of the laser light on the coating film on the glass cylinder was approximately 100 μm. For wiring pattern 1, the scanning parameters were set in the software so that the irradiation position of the laser light was moved 6 mm in the scanning direction (the longitudinal direction, which is 6 mm long for wiring pattern 1) at a maximum speed of 25 mm / sec (first irradiation), then moved 30 μm in a direction perpendicular to the scanning direction, and then moved again in the scanning direction at a maximum speed of 25 mm / sec (second irradiation). In this way, the irradiation position was moved 3 mm in the direction perpendicular to the scanning direction.

[0153] Next, the scanning parameters were set by the software so that the laser light irradiation position was moved 1 mm in the scanning direction at a maximum speed of 25 mm / sec, moved 5 mm in the same scanning direction at a maximum speed of 25 mm / sec without irradiating the laser light (pause section b), moved 30 μm in a direction perpendicular to the scanning direction, moved 1 mm again in the scanning direction at a maximum speed of 25 mm / sec, and moved 5 mm in the same scanning direction at a maximum speed of 25 mm / sec without irradiating the laser light (pause section b). In this way, the irradiation position was moved 2 mm in the direction perpendicular to the scanning direction. In this way, the copper-containing metal wiring of the wiring pattern 1 was obtained.

[0154] For wiring pattern 2, the scanning parameters were set in the software so that the laser beam irradiation was moved 1 mm in the scanning direction at a maximum speed of 25 mm / sec, then moved 5 mm in the same scanning direction at a maximum speed of 25 mm / sec without irradiating the laser beam (pause section b), moved 30 μm in a direction perpendicular to the scanning direction, and again moved 1 mm in the scanning direction at a maximum speed of 25 mm / sec, and then moved 5 mm in the same scanning direction at a maximum speed of 25 mm / sec without irradiating the laser beam (pause section b). In this way, the irradiation position was moved 2 mm in the direction perpendicular to the scanning direction.

[0155] Next, the scanning parameters were set in the software so that the laser light irradiation position was moved 6 mm in the scanning direction at a maximum speed of 25 mm / sec (first irradiation), then moved 30 μm in a direction perpendicular to the scanning direction, and then moved again in the scanning direction at a maximum speed of 25 mm / sec (second irradiation). In this way, the irradiation position was moved 3 mm in a direction perpendicular to the scanning direction. In this way, the copper-containing metal wiring of wiring pattern 2 was obtained.

[0156] The conductivity of the obtained metal wiring was evaluated using a digital multimeter AD7461 (manufactured by ADVANTEST Co., Ltd.) For the evaluation, the metal wiring of the wiring pattern 1 was cut into part c and part d along the cutting line C shown in FIG. The resistance of part c (3 mm x 6 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was found to be 0.31 Ω (average value of three measurements). The volume resistivity was also found to be 23.3 μΩ cm. The resistance value of part d (2 mm x 1 mm) was evaluated by the four-terminal measurement method with a tester placed on both ends in the longitudinal direction, and was 0.29 Ω (average value of three measurements). The volume resistivity was 21.8 μΩ cm. Part c and part d showed almost the same volume resistivity, confirming that metal wiring with little resistance variation was obtained. Similarly, wiring pattern 2 was divided into parts c and d at cutting line C, and the resistance was measured. The resistance of part c was 0.30 Ω (average of three measurements), and the volume resistivity was 22.5 μΩcm. The resistance of part d was 0.29 Ω (average of three measurements), and the volume resistivity was 21.8 μΩcm. Part c and part d showed almost the same volume resistivity, confirming that metal wiring with little resistance variation was obtained.

[0157] [Comparative Example 2] In the same manner as in Example 1, a copper-containing metal wiring was produced in the same manner as in Example 1, except that a non-circumscribing parallelogram B (a rectangle of 8 mm×8 mm outside the irradiation area pattern a) was set for the L-shaped irradiation area pattern a shown in FIG. 10A. In particular, the laser light was irradiated inside the L-shaped irradiation area pattern a, and the laser light was not emitted inside the other non-circumscribing parallelogram B. As a result, the processing time for irradiating the laser light to produce the copper-containing metal wiring was 2.1 times longer than that of Example 1, which caused a problem in productivity. [Industrial Applicability]

[0158] The metal wiring obtained by one embodiment of the present invention can be suitably used for producing wiring materials for electronic circuit boards and the like, mesh electrodes, electromagnetic wave shielding materials, and heat dissipation materials. [Explanation of symbols]

[0159] 1,2,4 Closed shape A,A1,A2,A3,A4 circumscribed parallelogram 1a,2a,2b,2c,4a,4b,4c,4d Non-irradiation area pattern S Scan length of irradiation target position S1 Scanning length of the laser beam emission part S2 Scan length of the laser non-emitting area D1 Direction of the first edge D2 Direction of the second edge 40 2D Base Pattern 41 Three-dimensional shape pattern of film surface 42 3D pattern for determining irradiation area P Irradiation area pattern R irradiation area 11 Structure 11a Base material 11b Membrane 100 Metal wiring manufacturing equipment 101 Structure holding part 102 Laser Oscillation Device 103 Laser beam scanning device 103a X-axis galvanometer mirror 103b X-axis galvanometer motor 103c Y-axis galvanometer mirror 103d Y-axis galvanometer motor 104 Processing equipment 400 Laser light irradiation control device

Claims

1. A method for manufacturing a metal wiring, comprising: a laser light irradiation step of forming a metal wiring by irradiating a laser light to a predetermined irradiation area of ​​a film containing a metal and / or a metal oxide, The laser light irradiation step includes the following steps: a scanning area pattern generating step of generating a scanning area pattern including a two-dimensional irradiation area pattern that is previously created and is composed of one or more closed figures, and a non-irradiation area pattern that is an area other than the irradiation area pattern within a circumscribed parallelogram of the irradiation area pattern; A parameter assignment step of assigning preset scanning parameters to the scanning area pattern; and an irradiation step of irradiating the irradiation region with laser light by scanning an irradiation target position of the laser light in a direction of a first side of the circumscribing parallelogram over the entire area of ​​the circumscribing parallelogram while moving the position in a direction of a second side adjacent to the first side in accordance with the scanning region pattern and the scanning parameters; Including, The method, wherein the scanning parameters include a scan length, which is a total width of the circumscribing parallelogram, emitting laser light for an illuminated area pattern and not emitting laser light for a non-illuminated area pattern.

2. The method according to claim 1 , wherein the film subjected to the laser light irradiation step is formed on a substrate.

3. The method according to claim 2 , wherein the film subjected to the laser light irradiation step is a coating film formed on the substrate.

4. The method according to any one of claims 1 to 3, wherein a scanning parameter assigned to the non-irradiated region pattern differs from a scanning parameter assigned to the irradiated region pattern only in that laser light is not emitted.

5. The method of any one of claims 1 to 4, wherein the circumscribing parallelogram is a minimum circumscribing rectangle.

6. The method of any one of claims 1 to 5, wherein the circumscribing parallelogram is a rectangle having a long side and a short side, and the first side is the long side.

7. The method according to any one of claims 1 to 6, wherein the irradiation area pattern is composed of two or more closed figures, and the circumscribing parallelogram is specified for each closed figure.

8. The method according to any one of claims 1 to 7, wherein the irradiation area pattern is a two-dimensional projection pattern of a three-dimensional pattern generated on a previously acquired three-dimensional shape pattern of the film surface.

9. The illumination area pattern is A two-dimensional base pattern previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern of the film surface to generate a three-dimensional pattern for determining an irradiation region; Measuring a dimension B1 of a span portion B in the Y-axis direction on the two-dimensional base pattern; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern; is a reduced correction pattern generated by The method according to any one of claims 1 to 7, wherein in the irradiating step, an X-axis direction is designated as a direction of the first side, and a Y-axis direction is designated as a direction of the second side.

10. The method according to any one of claims 1 to 9, wherein the laser light is scanned while overlapping in a line width direction of a scanning line.

11. The method of claim 10 , wherein the overlap is greater than or equal to 10% and less than or equal to 99% of the line width.

12. The method of any one of claims 1 to 11, wherein the film comprises copper and / or copper oxide.

13. The method of any one of claims 1 to 12, wherein the membrane further comprises a dispersing agent.

14. 1. A metal wiring manufacturing apparatus for forming metal wiring in a structure including a substrate and a film containing a metal and / or metal oxide disposed on the substrate by irradiating a laser beam to a preset irradiation area of ​​the film, the apparatus comprising: The metal wiring manufacturing apparatus comprises: a structure holder that holds the structure; A laser oscillator that generates laser light; A laser beam scanning device that scans the laser beam emitted from the laser oscillation device; and a processing device for controlling the laser oscillation device and the laser beam scanning device; Equipped with The processing device comprising: A scanning area pattern composed of a two-dimensional irradiation area pattern and a non-irradiation area pattern which is an area other than the irradiation area pattern within a circumscribed parallelogram of the irradiation area pattern; and scanning parameters assigned to said scan area pattern; to the laser oscillation device and the laser beam scanning device, thereby operating the laser oscillation device and the laser beam scanning device in such a way that an irradiation target position of the laser beam is moved in a direction of a second side adjacent to the first side while scanning in a direction of a first side of the circumscribed parallelogram over the entire area of ​​the circumscribed parallelogram, in accordance with the scanning control signal; The scanning parameters include a scanning length which is an overall width of a parallelogram, and laser light emission to an irradiation area pattern and non-emission of laser light to a non-irradiation area pattern.

15. the laser beam scanning device is a galvanometer scanner including a galvanometer motor and a galvanometer mirror, The metal wiring manufacturing apparatus according to claim 14 , wherein the processing device controls the emission of the laser light and the non-emission of the laser light by switching on and off the laser oscillation device.

16. 16. The metal wiring manufacturing apparatus according to claim 14, wherein a scanning parameter assigned to the non-irradiation area pattern is different from a scanning parameter assigned to the irradiation area pattern only in that laser light is not emitted.

17. A laser light irradiation control device that controls a laser oscillation device and a laser light scanning device of a metal wiring manufacturing apparatus to irradiate a laser light to a preset irradiation area of ​​a film containing a metal and / or metal oxide, a coordinate data generating unit that generates coordinate data of a scanning area pattern composed of the irradiation area pattern and the non-irradiation area pattern after specifying a circumscribed parallelogram for the input two-dimensional irradiation area pattern and further specifying an area other than the irradiation area pattern within the circumscribed parallelogram as a non-irradiation area pattern; a scanning control signal generating unit that assigns preset scanning parameters to the coordinate data and generates a scanning control signal according to the coordinate data and the scanning parameters; an output unit that outputs the scanning control signal to a laser oscillator and a laser beam scanning device; 4. A laser light irradiation control device, wherein the scanning parameters include a scanning length that is a total width of the circumscribed parallelogram, and laser light emission to an irradiation area pattern and laser light non-emission to a non-irradiation area pattern.

18. The laser light irradiation control device according to claim 17 , wherein the scanning parameters assigned to the non-irradiation area pattern differ from the scanning parameters assigned to the irradiation area pattern only in that the laser light is not emitted.

19. 19. The laser light irradiation control device according to claim 17, wherein the circumscribing parallelogram is a minimum circumscribing rectangle.

20. 20. The laser light irradiation control device according to claim 17, wherein the circumscribed parallelogram is a rectangle having a long side and a short side, and the direction of the scanning length is the direction of the long side.

21. The laser light irradiation control device according to any one of claims 17 to 20, wherein the irradiation area pattern is a two-dimensional projection pattern of a three-dimensional pattern generated on a previously acquired three-dimensional shape pattern of the film surface.

22. The illumination area pattern is A two-dimensional base pattern previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern of the film surface to generate a three-dimensional pattern for determining an irradiation region; Measuring a dimension B1 of a span portion B in the Y-axis direction on the two-dimensional base pattern; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern; is a reduced correction pattern generated by 21. The laser light irradiation control device according to claim 17, wherein the X-axis direction is a direction of a scanning length of the irradiation target position of the laser light, and the Y-axis direction is a direction of a scanning width of the irradiation target position of the laser light.

23. A laser light irradiation control program for controlling a laser oscillator and a laser light scanner of a metal wiring manufacturing apparatus in order to irradiate a laser light onto a preset irradiation region of a film containing a metal and / or metal oxide, comprising: A circumscribing parallelogram is specified for the input two-dimensional irradiation area pattern, and an area other than the irradiation area pattern within the circumscribing parallelogram is further specified as a non-irradiation area pattern, and then coordinate data of a scanning area pattern constituted by the irradiation area pattern and the non-irradiation area pattern is generated; Assigning preset scanning parameters to the coordinate data; generating a scan control signal according to the coordinate data and the scan parameters; outputting the scanning control signal; and making the laser light irradiation control device execute the above steps, a scanning parameter including a scanning length that is a total width of the circumscribing parallelogram, and a laser beam emission to an irradiation area pattern and a laser beam non-emission to a non-irradiation area pattern.

24. 24. The laser light irradiation control program according to claim 23, wherein the scanning parameters assigned to the non-irradiation area pattern differ from the scanning parameters assigned to the irradiation area pattern only in that the non-irradiation area pattern does not emit laser light.

25. 25. The laser light irradiation control program according to claim 23, wherein the circumscribing parallelogram is a minimum circumscribing rectangle.

26. 26. The laser light irradiation control program according to claim 23, wherein the circumscribed parallelogram is a rectangle having a long side and a short side, and the direction of the scanning length is the direction of the long side.

27. 27. The laser light irradiation control program according to claim 23, wherein the irradiation area pattern is composed of two or more closed figures, and the circumscribing parallelogram is specified for each closed figure.

28. The laser light irradiation control program according to any one of claims 23 to 27, wherein the irradiation area pattern is a two-dimensional projection pattern of a three-dimensional pattern generated on a three-dimensional shape pattern of a film surface acquired in advance.

29. The illumination area pattern is A two-dimensional base pattern previously generated on an XY plane is projected onto a previously acquired XYZ three-dimensional shape pattern of the film surface to generate a three-dimensional pattern for determining an irradiation region; Measuring a dimension B1 of a span portion B in the Y-axis direction on the two-dimensional base pattern; Measuring a dimension B2 of a projection portion of the span portion B on the three-dimensional pattern for determining an irradiation region; multiplying the dimension B1 of the two-dimensional base pattern by B1 / B2 to generate a reduced correction pattern; is a reduced correction pattern generated by The laser light irradiation control program according to any one of claims 23 to 27, wherein the X-axis direction is the direction of the scanning length of the irradiation target position of the laser light, and the Y-axis direction is the direction of the scanning width of the irradiation target position of the laser light.

30. The laser light irradiation control program according to any one of claims 23 to 29, wherein the laser light is scanned while overlapping in a line width direction of a scanning line.

31. 31. The laser light irradiation control program according to claim 30, wherein the overlap is equal to or greater than 10% and equal to or less than 99% of the line width.

32. A computer-readable recording medium or recording device storing the program according to any one of claims 23 to 31.

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