Long-life, high-power terminals for substrate supports with embedded heating elements

Abstract

To provide a long life, high power connection terminal for a substrate support with an embedded heating element.SOLUTION: A connection terminal 300 for a heating element of a substrate support in a substrate processing system includes a contact plate 304 configured for electrical connection to a contact pad 336 of a heating element in a ceramic layer 344 of the substrate support. A wire connection portion 308 receives and retains a wire 316 extending from the contact plate and arranged to power the heating elements. At least one of the contact plate and the wire connection includes a first material having a first coefficient of thermal expansion (CTE) within 20% of a second coefficient of thermal expansion (CTE) of the ceramic layer.SELECTED DRAWING: Figure 3E

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims priority to U.S. Patent Application No. 16 / 136,799, filed September 20, 2018, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to a terminal for a thermal control element of a substrate support in a substrate processing system. [Background technology]

[0003] The discussion of the background art provided herein is intended to present the contents of the present disclosure generally, and the inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure to the extent that they are described in this Background section and in a manner that is not prior art at the time of filing.

[0004] A substrate processing system may be used to process a substrate, such as a semiconductor wafer. Examples of processes that may be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and / or other etching, deposition, or cleaning processes. The substrate may be disposed on a substrate support (pedestal, electrostatic chuck (ESC), etc.) in a processing chamber of the substrate processing system. During etching, a gas mixture including one or more precursors may be introduced into the processing chamber, and a plasma may be used to cause a chemical reaction to occur.

[0005] The substrate support may include a ceramic layer disposed to support the substrate. For example, the substrate may be clamped to the ceramic layer during processing. In some examples, the temperature of the substrate support (e.g., the ceramic layer) may be regulated using a thermal control element. Summary of the Invention

[0006] A connection terminal for a heating element of a substrate support in a substrate processing system includes a contact plate configured to electrically connect to a contact pad of the heating element in a ceramic layer of the substrate support. A wire connection extends from the contact plate and is configured to receive and hold wiring arranged to provide power to the heating element. At least one of the contact plate and the wire connection includes a first material having a first coefficient of thermal expansion (CTE) that is within 20% of a second CTE of the ceramic layer.

[0007] In other features, the first CTE is within 5% of the second CTE. The first CTE is about 7.2 and the second CTE is about 7.1. The contact plate and the wire termination each include a first material. The first material is a tungsten alloy. The first material is a tungsten-copper alloy. The first material is a tungsten-copper alloy that is about 85% tungsten and about 15% copper. The first material is a tungsten-molybdenum alloy. The wire termination includes a vertical fin extending downwardly from the contact plate, the vertical fin including an opening configured to receive the wire. The wire termination includes a tubular socket configured to receive the wire.

[0008] In other features, the contact plate includes a first material and the wire connection includes a second material having a third CTE within 20% of the fourth CTE of the trace. The first material is a tungsten alloy and the second material is copper. The contact plate and the wire connection are brazed. The contact plate and the wire connection are brazed using silver. The connection terminal further includes a plurality of spacers disposed on an upper contact surface of the contact plate.

[0009] A connection terminal for a heating element of a substrate support in a substrate processing system includes a contact plate configured to electrically connect to a contact pad of the heating element in a ceramic layer of the substrate support. A wire bond extends from the contact plate and is configured to receive and hold a wire arranged to provide power to the heating element. The connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal to a wire side of the connection terminal.

[0010] In other features, the CTE of the FGM increases from the ceramic layer side of the connection terminal to the wiring side of the connection terminal. The FGM has a first CTE at the ceramic layer side of the connection terminal and a second CTE at the wiring side of the connection terminal. The first CTE is within 20% of a third CTE of the ceramic layer and the second CTE is within 20% of a fourth CTE of the wiring. The FGM includes tungsten and at least one of copper and molybdenum.

[0011] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. [Brief description of the drawings]

[0012] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0013] [Figure 1] FIG. 2 is a functional block diagram of an exemplary processing chamber according to the present disclosure.

[0014] [Figure 2A] 1 illustrates an exemplary substrate support with connection terminals according to the principles of the present disclosure.

[0015] [Figure 2B] Exemplary connection terminals. [Figure 2C] Exemplary connection terminals. [Figure 2D] Exemplary connection terminals.

[0016] [Figure 3A] 1 illustrates an exemplary connection terminal according to the present disclosure. [Figure 3B] 1 illustrates an exemplary connection terminal according to the present disclosure. [Figure 3C] 1 illustrates an exemplary connection terminal according to the present disclosure. [Figure 3D] 1 illustrates an exemplary connection terminal according to the present disclosure. [Figure 3E] 1 illustrates an exemplary connection terminal according to the present disclosure.

[0017] [Figure 4A] 4 illustrates another exemplary connection terminal according to the present disclosure. [Figure 4B] 4 illustrates another exemplary connection terminal according to the present disclosure. [Figure 4C] 4 illustrates another exemplary connection terminal according to the present disclosure.

[0018] In the drawings, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] The substrate processing system may include a temperature controller coupled to a plurality of heating elements (e.g., macro-thermal control elements (TCEs) and / or micro-thermal control elements (TCEs)) disposed on the substrate support. For example, the plurality of TCEs may be disposed on a ceramic layer of the substrate support. The temperature controller controls the plurality of heating elements to adjust the temperature of the substrate support to control the temperature of a substrate disposed on the substrate support.

[0020] The wiring provides current from an external power source to control the heating elements. By way of example only, the power source may correspond to a high current AC or DC power source (e.g., 5-10 kW for a macro-TCE, 1-5 kW for a micro-TCE, etc.). In some examples (e.g., for a macro-TCE), the wiring may be connected to each heating element using connection terminals and contact pads. In other examples (e.g., for a micro-TCE), the wiring may be soldered directly to the contact pads of each heating element. By way of example only, the contact pads are disposed on and / or within the bottom surface of the ceramic.

[0021] The connection terminals provide an interface having low electrical resistance between the traces and the heating element via the contact pads. In some examples, the connection terminals include copper, silver-plated copper, or the like. The contact pads may be nickel-plated. Typically, the connection terminals are manually soldered to the contact pads and the traces are soldered to the connection terminals. The connections between the traces, connection terminals, and contact pads may be susceptible to a variety of problems that cause failures and / or reduce the reliability and lifespan of the substrate support.

[0022] For example, the respective coefficients of thermal expansion (CTE) of the connection terminals and the ceramic layer may be different. Thus, as the heating element is heated to increase the temperature of the ceramic layer, the difference between the CTE of the ceramic layer and the CTE of the connection terminals may stress and fatigue the solder joints between the connection terminals and the contact pads, causing cracks, delamination, and electrical open circuit failures. Furthermore, since the contact interface between the connection terminals and the contact pads is substantially flat, it is difficult to achieve a consistent solder thickness in manual soldering. Similarly, in examples where traces (e.g., copper wires) are directly soldered to the contact pads, the difference between the CTE of the ceramic layer and the CTE of the traces causes stress and fatigue of the solder joints and related failures.

[0023] A connecting terminal of a heating element according to the principles of the present disclosure reduces stress at a solder joint between the connecting terminal and the ceramic layer. For example, the connecting terminal is configured to reduce a difference between the respective CTEs of the connecting terminal and the ceramic layer. In one example, the connecting terminal includes a metal alloy material having a CTE tuned to the CTE of the ceramic layer. In another example, the connecting terminal includes multiple portions (e.g., soldered or bonded portions) each including a metal having a different CTE. In yet another example, the connecting terminal includes a functionally graded material (FGM). In some examples, the contact interface between the connecting terminal and the contact pad of the ceramic layer includes a spacer configured to achieve a consistent solder thickness.

[0024] Thus, the connection terminals according to the present disclosure reduce stress on the solder joints and increase (e.g., by 3-5 times) the reliability and overall life of the substrate support. The principles of the present disclosure may also be implemented in other connections within a substrate processing system, including, but not limited to, embedded RF Faraday shield grids, clamp electrodes, embedded temperature sensors, embedded substrate voltage sensors, etc.

[0025] 1, an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 may be used to perform etching and / or other suitable substrate processing using RF plasma. The substrate processing system 100 includes a processing chamber 102 that surrounds other components of the substrate processing system 100 and contains the RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106. Although a particular substrate processing system 100 and chamber 102 are shown as examples, the principles of the present disclosure may be applied to other types of substrate processing systems and chambers, such as substrate processing systems that generate plasma in-situ, substrate processing systems that implement remote plasma generation and delivery (e.g., using plasma tubes, microwave tubes), etc.

[0026] By way of example only, the upper electrode 104 may include a gas distribution device, such as a showerhead 109, for introducing and distributing process gases. The showerhead 109 may include a stem having one end connected to the top surface of the processing chamber. A base is generally cylindrical and extends radially outward from the other end of the stem away from the top surface of the processing chamber. The substrate-facing surface or faceplate of the showerhead base includes a number of holes through which process or purge gases flow. Alternatively, the upper electrode 104 may include a conductive plate, and the process gases may be introduced in another manner.

[0027] The substrate support 106 includes a conductive base plate 110 that functions as a bottom electrode. The base plate 110 supports a ceramic layer 112. In some examples, the ceramic layer 112 may include a heating layer, such as a ceramic multi-zone heating plate. A thermal resistance layer 114 (e.g., a bonding layer) may be disposed between the ceramic layer 112 and the base plate 110. The base plate 110 may include one or more coolant passages 116 for flowing a coolant through the base plate 110.

[0028] The RF generating system 120 generates and outputs an RF voltage to either the upper electrode 104 or the lower electrode (e.g., the base plate 110 of the substrate support 106). The other of the upper electrode 104 and the base plate 110 may be DC grounded, AC grounded, or floating. By way of example only, the RF generating system 120 may include an RF voltage generator 122 that generates an RF voltage that is supplied to the upper electrode 104 or the base plate 110 by a matched distribution network 124. In other examples, the plasma may be generated inductively or remotely. As shown for illustrative purposes, the RF generating system 120 corresponds to a capacitively coupled plasma (CCP) system, although the principles of the present disclosure may be implemented in other suitable systems (by way of example only, a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generating supply system, etc.).

[0029] The gas supply system 130 includes one or more gas sources, gas source 132-1, gas source 132-2, ..., and gas source 132-N (collectively, gas source 132), where N is an integer greater than zero. The gas sources provide one or more precursors and mixtures thereof. The gas sources may provide a purge gas. Vaporized precursors may be used. The gas sources 132 are connected to a manifold 140 by valves 134-1, valves 134-2, ..., and valves 134-N (collectively, valves 134), and mass flow controllers 136-1, mass flow controllers 136-2, ..., and mass flow controllers 136-N (collectively, mass flow controllers 136). An output of the manifold 140 is provided to the process chamber 102. By way of example only, an output of the manifold 140 is provided to a showerhead 109.

[0030] The temperature controller 142 may be connected to a number of heating elements, such as thermal control elements (TCEs) 144 disposed on the ceramic layer 112. For example, the heating elements 144 may include, but are not limited to, macro-heating elements corresponding to respective sections of a multi-zone heating plate and / or an array of micro-heating elements disposed across multiple sections of a multi-zone heating plate. The temperature controller 142 may be used to control the number of heating elements 144 to control the temperature of the substrate support 106 and the substrate 108. As described in more detail below, electrical current is supplied to the TCEs 144 to control the temperature of the substrate support 106 via connection terminals (not shown in FIG. 1 ) in accordance with the principles of the present disclosure.

[0031] The temperature controller 142 may be in communication with the coolant assembly 146 to control the flow of coolant through the passages 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the passages 116 to cool the substrate support 106.

[0032] Valves 150 and pumps 152 may be used to evacuate reactants from the processing chamber 102. A system controller 160 may be used to control the components of the substrate processing system 100. A robot 170 may be used to transfer substrates onto and off of the substrate support 106. For example, the robot 170 may transfer substrates between the substrate support 106 and a load lock 172. Although shown as a separate controller in the figures, the temperature controller 142 may be implemented within the system controller 160. In some examples, a protective seal 176 may be provided around the bonding layer 114 between the ceramic layer 112 and the base plate 110.

[0033] The substrate support 106 includes an edge ring 180. The edge ring 180 may correspond to a top ring that may be supported by a bottom ring 184. In some examples, the edge ring 180 may be further supported by one or more of a middle ring (not shown in FIG. 1), a step in the ceramic layer 112, or the like, as described in more detail below. The edge ring 180 according to the principles of the present disclosure is movable (e.g., vertically movable up and down) relative to the substrate 108. For example, the edge ring 180 may be controlled by an actuator responsive to the system controller 160. In some examples, the edge ring 180 may be adjusted during substrate processing (i.e., the edge ring 180 may be an adjustable edge ring). In other examples, the edge ring 180 may be removable (e.g., using the robot 170 through an airlock while the processing chamber 102 is under vacuum). In still other examples, the edge ring 180 may be both adjustable and removable.

[0034] 2, an exemplary substrate support 200 includes a base plate 204 configured to support a ceramic layer 208. A thermally resistant layer 212 (e.g., a bonding layer) may be disposed between the ceramic layer 208 and the base plate 204. An edge seal 216 may be disposed to surround the thermally resistant layer 212 and protect it from exposure to plasma and other processing materials. The ceramic layer 208 is configured to support a substrate 220 during processing, and an edge ring 224 surrounds the ceramic layer 208 and the substrate 220. In some examples, the base plate 204 may include one or more coolant passages 228 for flowing a coolant through the base plate 204.

[0035] The ceramic layer 208 includes a heating layer 232. For example, the ceramic layer 208 may correspond to a multi-zone heating plate with an embedded heating layer. As shown, the heating layer 232 includes macro-heating elements 236-1 and micro-heating elements 236-2 (collectively, heating elements 236). The macro-heating elements 236-1 correspond to respective sections of the ceramic layer 208. Thus, the macro-heating elements 236-1 may be individually controlled to control the temperature of each section of the ceramic layer 208. Meanwhile, the micro-heating elements 236-2 correspond to an array of heating elements distributed across multiple sections of the ceramic layer 208. The micro-heating elements 236-2 may be individually controlled to control the temperature at a particular location of the ceramic layer 208 to compensate for temperature non-uniformities, etc.

[0036] Power (e.g., AC power, pulse-width modulated DC power, etc.) is provided to the heating elements 236 through wires 244 from a circuit board (e.g., a distribution board) 240 embedded within or adjacent to the bottom surface of the base plate 204. For example, a first end (e.g., an input end) of the wires 244 is soldered to the circuit board 240, while a second end (e.g., an output end) of the wires 244 is directly or indirectly soldered to the heating elements 236 within the ceramic layer 208, as described in more detail below.

[0037] In some examples, the wires 244 may be soldered to the inside of the connection terminals 248 as shown in Figures 2B and 2C. The connection terminals 248 are then soldered to the contact pads 252 of the respective heating elements 236 within the heating layer 232. By way of example only, the wires 244 shown in Figure 2B are soldered to the contact pads 252 of one macro heating element 236-1 using the connection terminals 248, while in other examples, the wires 244 are soldered directly to the contact pads 252 as shown in Figure 2D. By way of example only, the wires 244 shown in Figure 2D are soldered directly to the contact pads 252 of one micro heating element 236-2 without using one of the connection terminals 248.

[0038] 2B, 2C, and 2D, the ceramic layer 208, the traces 244, the connection terminals 248, the contact pads 252, etc. have different CTEs and therefore expand and contact at different rates in response to temperature changes in the ceramic layer 208 during operation (e.g., as a result of controlling the temperature of the ceramic layer 208 using the heating element 236). For example, the CTE of the ceramic layer 208 may be relatively low compared to the CTEs of the traces 244, the connection terminals 248, and the solder material. Thus, temperature changes can cause stress and fatigue in the solder material, resulting in cracking of the solder material and disconnection of the traces 244 and / or the connection terminals 248 from the contact pads 252.

[0039] 3A, 3B, 3C, 3D, and 3E, an exemplary connection terminal 300 according to the present disclosure is shown. The connection terminal 300 includes a contact plate 304 and a termination portion (e.g., vertical fin) 308. The contact plate 304 is generally flat and may be circular (as shown), oval, rectangular, etc. As shown, the termination portion 308 extends perpendicular to a plane defined by the contact plate 304 and includes a through hole or opening 312. The opening 312 (which may be circular as shown) is positioned to receive one end of a wire 316 as shown in FIG. 3B. In some examples, the wire 316 may be crimped into the opening 312. Solder 320 is applied to hold the wire 316 within the opening 312 and electrically connect the wire 316 to the connection terminal 300.

[0040] The connection terminal 300 includes one or more standoffs or spacers (e.g., protrusions) 324 disposed on the upper contact surface 328 of the contact plate 304. For example, in the example shown in FIG. 2B and FIG. 2C, the contact interface between the connection terminal 248 and the contact pad 252 is substantially flat, making it difficult to achieve consistent solder thickness in manual soldering. Non-uniform solder thickness may cause improper electrical connection between the connection terminal 248 and the contact pad 252, tilt of the connection terminal 248 relative to the contact pad 252, solder joints that are too thick or too thin, etc. The spacer 324 according to the principles of the present disclosure ensures a uniform and desired thickness of the solder joint 332 between the contact surface 328 and the contact pad 336, as shown in FIG. 3E. For example, the height of the spacer 324 determines the thickness of the gap 340 between the contact surface 328 and the contact pad 336. By way of example only, the solder 320 and / or the solder joint 332 may include tin, silver, a tin-silver alloy, etc.

[0041] The connection terminal 300 is made of a material with a CTE adjusted to match (e.g., within 20%) the CTE of the ceramic layer 344. In some examples, the CTE of the connection terminal 300 is adjusted to be within 5% of the CTE of the ceramic layer 344. For example, as shown in Figures 2A, 2B, 2C, and 2D, the ceramic layer 208 may be made of an alumina material such as 99% or more aluminum oxide (Al2O3) and has a CTE of about 7.1 (e.g., + / - 0.5). Meanwhile, the wiring 244 and the connection terminal 248 are typically made of nearly 100% copper (Cu) with a CTE of about 17.2 (e.g., + / - 0.5). Thus, a temperature change in the ceramic layer 208 will result in significantly different expansion coefficients in the ceramic layer 208 and the connection terminal 248, causing failure of the solder joint. Conversely, connecting terminal 300 according to the principles of the present disclosure has a CTE that more closely matches (e.g., within 20%) the CTE of ceramic layer 344. In some examples, the CTE of connecting terminal 300 is adjusted to be within 5% of the CTE of ceramic layer 344.

[0042] For example, the connection terminal 300 includes a copper-tungsten (Cu-W) alloy having a CTE of about 7.2 (e.g., + / -0.5). By way of example only, the connection terminal 300 includes about 85% (e.g., + / -5%) tungsten and about 15% (e.g., + / -5%) copper. In one example, the Cu-W alloy includes copper dissolved in a porous tungsten matrix structure. The ratio of tungsten to copper in the alloy may be selected to achieve desired electrical conductivity, thermal conductivity, surface plating and soldering properties, and machinability. Furthermore, the alloy is non-magnetic. In another example, the connection terminal 300 includes W-molybdenum (Mo) having a CTE of about 7.2 (e.g., + / -0.5). In this way, the difference between the thermal expansion coefficients of the ceramic layer 344 and the connection terminal 300 is minimized. In some examples, the connection terminals 300 may be plated (e.g., with nickel plating instead of silver plating) to minimize intermetallic growth. For example, the nickel plating may have a thickness of 5.0 to 10 μm.

[0043] Thus, as shown in FIG. 3E, the connection terminal 300 is soldered to the contact pad 336 by the solder joint 332 having a desired uniform thickness determined by the spacer 324. The wire 316 is routed through the base plate 348 and the bonding layer 352 and is pressed and soldered inside the opening 312 of the connection portion 308. Since the difference between the CTE of the ceramic layer 344 and the connection terminal 300 is minimal as described above, the solder 320 and the solder joint 332 are exposed to less stress caused by thermal expansion. Furthermore, since the wire 316 is pressed inside the opening 312, the electrical connection between the wire 316 and the connection terminal 300 can be maintained even in the event of failure of the solder 320. In this way, the life of the connection terminal 300, and therefore the life of the substrate support, is significantly increased.

[0044] FIG. 3C shows an example of a connection terminal 300. By way of example only, the connection terminal 300 of FIG. 3C may be configured to connect to a macro-heating element 236-1. Meanwhile, the connection terminal 300 of FIG. 3D may be configured to connect to a micro-heating element 236-2. In this example, the connection terminal 300 of FIG. 3D may have reduced dimensions (e.g., a smaller opening 312, a connection portion 308 having a narrower width, a contact plate 304 having a smaller diameter, etc.) relative to the connection terminal 300 of FIG. 3C. In some examples, the connection terminal 300 of FIG. 3D includes grooves 356 on either side of the connection portion 308 to enable tighter crimping of the trace 316 and thus a reduced width of the solder 320. Thus, the substrate support 200 may include an array of the connection terminals 300 of FIG. 3C for connecting to the macro-heating element 236-1 and an array of the connection terminals 300 of FIG. 3D for connecting to the micro-heating element 236-2.

[0045] 4A, 4B, and 4C, another exemplary connection terminal 400 according to the present disclosure is shown. The connection terminal 400 includes a contact plate 404 and a termination portion (e.g., a cylindrical socket) 408. The contact plate 404 is generally flat and may be circular (as shown), oval, rectangular, etc. As shown, the termination portion 408 extends perpendicular to a plane defined by the contact plate 404 and includes a downward opening 412. The opening 412 (which may be circular as shown) is positioned to receive one end of a wire 416, as shown in FIG. 4B. Solder 420 is applied to hold the wire 416 within the termination portion 408 and to electrically connect the wire 416 to the connection terminal 400. In some examples, the termination portion 408 may be crimped around the wire 416.

[0046] Connection terminal 400 may include one or more standoffs or spacers (e.g., protrusions) 424 similar to spacer 324 described above in Figure 3A. Spacer 424 ensures a uniform, desired thickness of a portion of solder joint 432 between connection terminal 400 and contact pad 436, as shown in Figure 4C. By way of example only, solder 420 and / or solder joint 432 may include tin, silver, tin-silver alloy, or the like.

[0047] The connection terminal 400 may have a bimetallic structure. For example, the contact plate 404 may include a first metal or a first metal alloy, and the connection portion 408 may include a second metal or a second metal alloy. The first metal and the second metal have different CTEs. For example, the first metal of the contact plate 404 has a first CTE selected to match (e.g., within 20% in some examples, within 5% in other examples) the CTE of the ceramic layer 444, while the second metal of the connection portion 408 has a second CTE selected to match (e.g., within 20% in some examples, within 5% in other examples) the CTE of the trace 416.

[0048] In one example, the contact plate 404 includes tungsten or a tungsten alloy (e.g., at least 85% tungsten and 15% or less copper) and the wire connections include copper or a copper alloy (e.g., at least 85% copper and 15% or less tungsten). Thus, the CTE of the contact plate 404 is less than the CTE of the wire connections 408 such that the CTE of the contact plate 404 more closely matches the CTE of the ceramic layer 444 (e.g., within 20% in some examples, within 5% in other examples) and the CTE of the wire connections 408 more closely matches the CTE of the trace 416 (which may include 100% copper) (e.g., within 20% in some examples, within 5% in other examples). Because the CTEs of the respective interface surfaces of the contact plate 404 and the wire connections 408 more closely match the ceramic layer 444 and the trace 416, thermal expansion differences that cause stresses within the solder 420 and the solder joints 432 are further minimized.

[0049] The contact plate 404 and the wire connections 408 may be joined using processes such as sintering, brazing, and the like. As shown, the contact plate 404 and the wire connections 408 are connected using brazing techniques. For example, brazing is used to join the contact plate 404 to the wire connections 408 by brazing joints 448. By way of example only, the brazing joints 448 are made of silver (Ag) and have a thickness of 20-30 μm. In one example, a bimetallic structure may first be formed (e.g., by brazing a tungsten-copper alloy to copper with silver) and then machined into the connection terminal 400. In another example, the contact plate 404 and the wire connections 408 may be formed and machined separately and then brazed. The entire connection terminal 400 may be nickel plated. In some examples, the contact plate 404 and the wire connections 408 are nickel plated before being brazed. The connection terminal 400, including the silver braze joint 448, may be nickel plated again following brazing.

[0050] In another example, the connection terminal 400 may include a material having a constant CTE gradient (i.e., a CTE that decreases from the ceramic layer side to the wiring side of the connection terminal 400). For example, the connection terminal 400 may include a functionally graded material (FGM). In one example, the connection terminal 400 includes a functionally graded tungsten-copper material. The ratio of tungsten to copper may decrease from the ceramic layer side to the wiring side of the connection terminal (e.g., from a tungsten:copper ratio of 85:15 to a copper:tungsten ratio of 100:0). The functionally graded material may be formed first (e.g., as a block) and then machined into the connection terminal 400.

[0051] The principles described in the examples of Figures 4A-4C may also be applied to the connection terminal 300 of Figures 3A-3E. For example, the connection terminal 300 may have a bimetal structure, an FGM structure, etc. Similarly, the connection portion 408 of the connection terminal 400 may be configured as a vertical fin including a through hole or opening 312, as described in Figures 3A-3E.

[0052] The above description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in various forms. Thus, while the disclosure includes certain examples, other variations will become apparent upon review of the drawings, specification, and claims that follow, and thus the true scope of the disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, one or more of these features described with respect to any embodiment of the disclosure may be implemented in other embodiments and / or in combination with features of other embodiments (even if the combination is not specified). In other words, the described embodiments are not mutually exclusive, and it is within the scope of the disclosure to permute one or more of the embodiments with each other.

[0053] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless specified as "direct," the relationship may be a direct relationship in which there are no intervening elements between the first element and the second element, but may also be an indirect relationship in which there are one or more intervening elements (spatially or functionally) between the first element and the second element. In this specification, the phrase at least one of A, B, and C should be interpreted as meaning logic using non-exclusive logic, OR, (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0054] In some embodiments, the controller is part of a system that may be part of the above examples. Such systems may include semiconductor processing equipment, including processing tools, chambers, processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control pre-, during, and post-processing operations of semiconductor wafers or substrates. Electronics may refer to a "controller" that may control various parts or sub-parts of the system. The controller may be programmed to control the processes described in this disclosure, such as supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position operation settings, wafer loading and unloading to and from tools and other transport tools, and / or wafer loading and unloading to and from load locks connected or coupled to a particular system, depending on the processing conditions and / or type of system.

[0055] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0056] In some embodiments, the controller may be part of or coupled to a computer integrated or coupled with the system, or otherwise networked or combined with the system. For example, the controller may be in the "cloud" that allows remote access of wafer processing, or may be all or part of a fab host computer system. The computer may allow remote access to the system to monitor the progress of a manufacturing operation, review the history of past manufacturing operations, review trends or performance metrics from multiple manufacturing operations, modify parameters of a current process, set processing steps following a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to connect to or control. Thus, as discussed above, the controller may be distributed, for example, by including one or more separate controllers networked together and cooperating toward a common purpose, such as a process or control as described herein. An example of a controller distributed for such purposes would be one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperate to control a process in the chamber.

[0057] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0058] As described above, depending on the process steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory. The present invention can be realized, for example, in the following manner. Application example 1: 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of the contact plate and the connection portion includes a first material having a first coefficient of thermal expansion (CTE) that is within 20% of a second CTE of the ceramic layer. Application example 2: A connection terminal according to claim 1, The first CTE is within 5% of the second CTE. Application example 3: A connection terminal according to claim 1, The first CTE is about 7.2 and the second CTE is about 7.1. Application example 4: A connection terminal according to claim 1, A connection terminal, wherein each of the contact plate and the connection portion includes the first material. Application example 5: A connection terminal according to claim 1, The first material is a tungsten alloy. Application example 6: A connection terminal according to claim 1, The first material is a tungsten-copper alloy. Example 7: A connection terminal according to claim 1, The first material is a tungsten-copper alloy consisting of approximately 85% tungsten and 15% copper, the connection terminal. Application example 8: A connection terminal according to claim 1, The first material is a tungsten-molybdenum alloy. Example 9: A connection terminal according to claim 1, The connection terminal, wherein the wire termination portion comprises a vertical fin extending downwardly from the contact plate, the vertical fin including an opening configured to receive the wire. Example 10: A connection terminal according to claim 1, The connection terminal, wherein the wire connection portion includes a cylindrical socket configured to receive the wire. Example 11: A connection terminal according to claim 1, A connection terminal, wherein the contact plate includes the first material, and the connection portion includes a second material having a third CTE within 20% of a fourth CTE of the wiring. Application example 12: A connection terminal according to claim 11, The connection terminal, wherein the first material is a tungsten alloy and the second material is copper. Application example 13: A connection terminal according to claim 11, The contact plate and the connection portion are brazed to each other. Example 14: A connection terminal according to claim 11, The contact plate and the wire connection portion are brazed with silver, forming a connection terminal. Application example 15: The connection terminal of claim 1, further comprising: A connection terminal comprising a plurality of spacers disposed on an upper contact surface of the contact plate. Application example 16: 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect to contact pads of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; The connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal to a wiring side of the connection terminal. Example 17: A connection terminal according to claim 16, A connection terminal, wherein a CTE of the FGM increases from the ceramic layer side of the connection terminal to the wiring side of the connection terminal. Application example 18: A connection terminal according to claim 16, The FGM has a first CTE on the ceramic layer side of the connection terminal and a second CTE on the wiring side of the connection terminal, the first CTE being within 20% of a third CTE of the ceramic layer and the second CTE being within 20% of a fourth CTE of the wiring. Example 19: A connection terminal according to claim 16, The FGM comprises tungsten and at least one of copper and molybdenum.

Claims

1. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; The contact plate comprises tungsten and copper.

2. The connection terminal according to claim 1 , The connection terminal includes the FGM having the CTE gradient from the ceramic layer side of the connection terminal to the wiring side of the connection terminal.

3. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the connection terminal includes the FGM having the CTE gradient from the ceramic layer side of the connection terminal toward the wiring side of the connection terminal, A connection terminal, wherein the CTE of the FGM increases from the ceramic layer side of the connection terminal to the wiring side of the connection terminal.

4. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the connection terminal includes the FGM having the CTE gradient from the ceramic layer side of the connection terminal toward the wiring side of the connection terminal, the FGM has a first CTE on the ceramic layer side of the connection terminal and a second CTE on the wiring side of the connection terminal, the first CTE being within 20% of a third CTE of the ceramic layer and the second CTE being within 20% of a fourth CTE of the wiring.

5. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the connection terminal includes the FGM having the CTE gradient from the ceramic layer side of the connection terminal toward the wiring side of the connection terminal, The connection terminal, wherein the FGM includes tungsten and at least one of copper and molybdenum.

6. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the connection terminal includes the FGM having the CTE gradient from the ceramic layer side of the connection terminal toward the wiring side of the connection terminal, The connection terminal, wherein the FGM includes tungsten and copper.

7. The connection terminal according to claim 1 , the contact plate comprises tungsten; the connection portion includes copper, The connection terminal includes a brazed joint between the contact plate and the wire connection portion.

8. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the ceramic layer is disposed on a thermal resistance layer of the substrate support and includes the contact pad, the contact plate, and the braze joint; The connection terminal further includes: A connection terminal comprising: (i) the contact pad, the contact plate, and the braze joint; and (ii) a solder joint between the thermal resistance layer and the ceramic layer.

9. The connection terminal according to claim 8, further comprising: A connection terminal comprising a plurality of spacers disposed between the contact pad and the contact plate.

10. The connection terminal according to claim 9, The solder joints are between the plurality of spacers and the ceramic layer.

11. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the ceramic layer is disposed on a thermal resistance layer of the substrate support and includes the contact pad, the contact plate, and the braze joint; The connection terminal further includes: A connection terminal comprising: (i) the wire connection portion; and (ii) a solder joint between the thermal resistance layer and the ceramic layer.

12. The connection terminal according to claim 1 , the connection terminal includes the FGM having the CTE gradient from the ceramic layer side of the connection terminal toward the wiring side of the connection terminal, the contact plate comprises tungsten; the connection portion includes copper, The connection terminal includes the brazed joint between the contact plate and the wire connection portion.

13. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; At least 85% of the contact plate comprises tungsten and no more than 15% of the contact plate comprises copper.

14. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; At least 85% of the connection portion comprises copper, and 15% or less of the connection portion comprises tungsten.

15. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; At least 85% of the contact plates comprise tungsten and no more than 15% of the contact plates comprise copper; At least 85% of the connection portion comprises copper, and 15% or less of the connection portion comprises tungsten.

16. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; The connection terminal further includes: A connection terminal comprising a plurality of spacers disposed between the contact pad and the contact plate.

17. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; the ceramic layer is disposed on a thermally resistive layer of the substrate support; The connection terminal, wherein the wire connection portion is partially integrated with the thermal resistance layer and partially integrated with the ceramic layer.

18. 18. The connection terminal according to claim 17, the thermal resistance layer is disposed on a base plate of the substrate support; The wiring extends through the base plate to the thermal resistance layer and the connection portion.

19. The connection terminal according to claim 1 , The connection terminal, wherein the wire connection portion is a cylindrical socket having an opening for receiving the wire.

20. 1. A connection terminal for a heating element of a substrate support in a substrate processing system, comprising: a contact plate configured to electrically connect with a contact pad of the heating element in a ceramic layer of the substrate support; a wire connection extending from the contact plate, the wire connection configured to receive and hold wiring arranged to supply power to the heating element; At least one of: (i) the connection terminal includes a functionally graded material (FGM) having a coefficient of thermal expansion (CTE) gradient from a ceramic layer side of the connection terminal toward a wiring side of the connection terminal; and (ii) the contact plate includes tungsten, the connection portion includes copper, and the connection terminal includes a brazed joint between the contact plate and the connection portion; The connection terminal, wherein the brazing joint comprises silver.

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