Through-hole electrode substrate

Abstract

To enhance an adhesion property of conductive layers in a through-hole of a through electrode substrate.SOLUTION: A through electrode substrate 1 has: a substrate 100 that has a through-hole 90 penetrating through a first surface 101 and a second surface 102; a first conductive layer 61 provided at a part on the first surface 101 side of the through-hole 90; a second conductive layer 62 provided at a part on the second surface side 102 of the through-hole 90 so as to be separated from the first conductive layer 61; and a third conductive layer 65 between the first conductive layer 61 and the second conductive layer 62. The first conductive layer 61 has a first end part on a side wall of the through-hole 90. The second conductive layer 62 has a second end part on the side wall. The third conductive layer 65 covers the first end part and the second end part.SELECTED DRAWING: Figure 13

Description

[Technical field]

[0001] The present invention relates to a through electrode substrate, a manufacturing method thereof, and a semiconductor device using the through electrode substrate. [Background technology]

[0002] In recent years, development of a three-dimensional packaging technology in which semiconductor chips on which integrated circuits are formed are vertically stacked is underway. The three-dimensional packaging technology is a technology for reducing the area occupied by a semiconductor chip in the planar direction by stacking a plurality of semiconductor chips in the thickness direction of the semiconductor chip. In such a three-dimensional packaging technology, a through electrode is used as a three-dimensional wiring. For example, Patent Document 1 discloses a technology in which a through hole is provided in a semiconductor chip, and a conductive layer is filled in the through hole to form a through electrode, thereby electrically connecting both sides of the semiconductor chip.

[0003] However, the invention (filling type) disclosed in Patent Document 1 in which a conductive layer is filled inside a through hole has a problem in that it takes time to fill the inside of the through hole with a conductive layer. Therefore, for example, Patent Document 2 discloses an invention (non-filling type) in which a conductive layer is formed only on the side wall of the through hole, thereby shortening the process and improving productivity. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2006-222138 A [Patent Document 2] JP 2013-54213 A Summary of the Invention [Problem to be solved by the invention]

[0005] The non-filled through electrode disclosed in Patent Document 2 can shorten the process and improve productivity compared to the filled through electrode disclosed in Patent Document 1. However, in the non-filled through electrode, if the conductive layer peels off on the side wall of the through hole, a conduction failure occurs, so the adhesion between the side wall of the through hole and the conductive layer is important. In particular, in a through electrode with a high aspect ratio, it is difficult to ensure sufficient adhesion of the conductive layer formed on the side wall of the through hole, and further consideration is required.

[0006] An object of the present invention is to improve the adhesion of a conductive layer in a through hole in a through electrode substrate. [Means for solving the problem]

[0007] A method for manufacturing a through electrode substrate according to one embodiment of the present invention includes preparing a substrate having a first surface and a second surface opposite to the first surface, with a through hole formed therein that penetrates between the first surface and the second surface, forming a first conductive adhesion layer by sputtering on the first surface and a portion of the first surface side of the side wall of the through hole, and after forming the first conductive adhesion layer, forming a second conductive adhesion layer by sputtering on the second surface and a portion of the second surface side of the side wall of the through hole, forming a seed layer in contact with the first conductive adhesion layer and the second conductive adhesion layer and in contact with the first conductive adhesion layer and the side wall of the through hole exposed from the second conductive adhesion layer, and forming a conductive layer on the seed layer by electrolytic plating in which power is supplied to the seed layer.

[0008] According to this method for manufacturing a through hole electrode substrate, it is possible to improve the adhesion of the conductive layer in the through hole of the through hole electrode substrate.

[0009] A method for manufacturing a through electrode substrate according to one embodiment of the present invention includes preparing a substrate having a first surface and a second surface opposite to the first surface, with a through hole formed therein penetrating the first surface and the second surface, forming a first conductive adhesion layer by sputtering on the first surface and a portion of the first surface side of the side wall of the through hole, forming a second conductive adhesion layer by sputtering on the second surface and a portion of the second surface side of the side wall of the through hole, forming a third conductive adhesion layer on the first conductive adhesion layer, and then forming a fourth conductive adhesion layer on the second conductive adhesion layer, forming a seed layer made of the same material as the third conductive adhesion layer and the fourth conductive adhesion layer, in contact with the third conductive adhesion layer and the fourth conductive adhesion layer and in contact with the side wall of the through hole exposed from the first to fourth conductive adhesion layers, and forming a conductive layer on the seed layer by electrolytic plating in which power is supplied to the seed layer.

[0010] In another preferred embodiment, the third conductive adhesive layer and the fourth conductive adhesive layer may be formed by a sputtering method.

[0011] According to this method for manufacturing a through hole electrode substrate, it is possible to further improve the adhesion of the conductive layer in the through hole of the through hole electrode substrate.

[0012] In another preferred embodiment, an insulating filler may be formed in the through hole in which the conductive layer is formed.

[0013] According to this method for manufacturing a through hole electrode substrate, the sealing performance inside the through hole can be improved.

[0014] In another preferred embodiment, the seed layer may be formed by oblique deposition.

[0015] According to this method for manufacturing a through hole electrode substrate, even in the case of a through hole having a high aspect ratio, a seed layer can be formed on the side wall of the through hole between the first conductive adhesive layer and the second conductive adhesive layer.

[0016] In another preferred embodiment, the angle between a line parallel to the flight direction of the deposition material and a perpendicular line to the first surface in the oblique deposition may be 5° or more and 20° or less.

[0017] According to this method for manufacturing a through hole electrode substrate, even in the case of a through hole having a high aspect ratio, a seed layer can be formed on the side wall of the through hole between the first conductive adhesive layer and the second conductive adhesive layer.

[0018] A through electrode substrate according to one embodiment of the present invention includes a substrate having a first surface and a second surface opposite the first surface, with a through hole penetrating the first surface and the second surface, a first conductive adhesion layer arranged on the first surface and a portion of the first surface side of the side wall of the through hole, a second conductive adhesion layer arranged on the second surface and a portion of the second surface side of the side wall of the through hole, a seed layer arranged in contact with the first conductive adhesion layer, the second conductive adhesion layer and the side wall, and a conductive layer arranged on the seed layer.

[0019] According to this through electrode substrate, the adhesion of the conductive layer in the through hole in the through electrode substrate can be improved.

[0020] A through electrode substrate according to one embodiment of the present invention includes a substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating the first surface and the second surface, a first conductive adhesion layer arranged on the first surface and a portion of the first surface side of the side wall of the through hole, a second conductive adhesion layer arranged on the second surface and a portion of the second surface side of the side wall of the through hole, a third conductive adhesion layer arranged on the first conductive adhesion layer, a fourth conductive adhesion layer arranged on the second conductive adhesion layer, a seed layer arranged in contact with the third conductive adhesion layer, the fourth conductive adhesion layer and the side wall and made of the same material as the third conductive adhesion layer and the fourth conductive adhesion layer, and a conductive layer arranged on the seed layer.

[0021] According to this through electrode substrate, the adhesion of the conductive layer in the through hole of the through electrode substrate can be further improved.

[0022] In another preferred embodiment, an insulating filler may be disposed in the through hole in which the conductive layer is formed.

[0023] This through electrode substrate can improve the sealing performance inside the through hole.

[0024] A semiconductor device according to one embodiment of the present invention has the above-mentioned through electrode substrate, and two other substrates or chips that are stacked and electrically connected to each other with the through electrode substrate disposed therebetween.

[0025] A semiconductor device according to one embodiment of the present invention has the above-mentioned through electrode substrate, and another substrate or chip arranged alongside the through electrode substrate. Effect of the Invention

[0026] According to the present invention, it is possible to improve the adhesion of the conductive layer in the through hole of the through electrode substrate. [Brief description of the drawings]

[0027] [Figure 1] FIG. 2 is a top view illustrating a through electrode of the through electrode substrate according to the first embodiment of the present invention. [Diagram 2] 4 is a flowchart illustrating a method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. [Diagram 3] 2 is a schematic diagram showing a cross section of a substrate provided with a through hole in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. FIG. [Figure 4] 3 is a schematic diagram showing a cross section of a substrate on which an insulating layer is formed, in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Diagram 5] 3 is a schematic diagram showing a cross section of a substrate having a first conductive adhesive layer formed on one side surface in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 6] 4 is a schematic diagram showing a cross section of a substrate on which a second conductive adhesive layer is formed from the other side surface in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 7] 3 is a schematic diagram showing a cross section of a substrate on which a seed layer is formed on one side surface in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 8]4 is a schematic diagram showing a cross section of a substrate on which a seed layer has been formed from the other side surface in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 9] 3A to 3C are schematic diagrams showing a cross section of a substrate on which a conductive layer is formed, in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. [Figure 10] 3 is a schematic diagram showing a cross section of a substrate on which a conductive layer has been patterned, in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 11] 3 is a schematic diagram showing a cross section of a substrate on which a first photosensitive resin layer has been formed in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 12] 3 is a schematic diagram showing a cross section of a substrate on which a second photosensitive resin layer has been formed in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 13] FIG. 2 is a schematic diagram showing a cross section of a substrate on which first and second photosensitive resin layers have been patterned in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. [Figure 14] 3 is a schematic diagram showing a cross section of a substrate on which a wiring layer is formed, in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. FIG. [Figure 15] 5 is a diagram showing another example of a through hole of the through electrode substrate according to the first embodiment of the present invention. FIG. [Figure 16] 5 is a diagram showing another example of a through hole of the through electrode substrate according to the first embodiment of the present invention. FIG. [Figure 17] 5 is a diagram showing another example of a through hole of the through electrode substrate according to the first embodiment of the present invention. FIG. [Figure 18] 1 is a schematic diagram of a film formation apparatus by oblique deposition in a manufacturing method of a through hole electrode substrate according to a first embodiment of the present invention. [Figure 19] FIG. 2 is a schematic diagram showing a cross-sectional view of a through hole electrode substrate on which a conductive layer is formed by oblique deposition in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. [Figure 20] 10 is a schematic diagram showing a cross section of a substrate on which a conductive layer is formed, in a method for manufacturing a through hole electrode substrate according to a second embodiment of the present invention. FIG. [Figure 21] FIG. 13 is a diagram showing a semiconductor device according to a third embodiment of the present invention. [Figure 22] FIG. 11 is a diagram showing another example of the semiconductor device according to the third embodiment of the present invention. [Figure 23] FIG. 11 is a diagram showing yet another example of the semiconductor device according to the third embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] First Embodiment Hereinafter, a method for manufacturing a through-hole substrate according to a first embodiment of the present invention will be described in detail with reference to the drawings. Note that the following embodiment is an example of the present invention, and the present invention is not limited to these embodiments. Note that in the drawings referred to in this embodiment, the same or similar symbols are used for the same parts or parts having similar functions, and repeated explanations may be omitted. Also, the dimensional ratios of the drawings may differ from the actual ratios for the convenience of explanation, and some of the configurations may be omitted from the drawings.

[0029] [Configuration of the through electrode substrate 1] Fig. 1 is a top view illustrating a through electrode of a through electrode substrate according to a first embodiment of the present invention. Fig. 13 shows a schematic cross-sectional view taken along line AB in Fig. 1. Fig. 1 is a view seen from a first surface 101 side of a substrate 100. First, the configuration of a through electrode substrate 1 will be described with reference to Figs. 1 and 13.

[0030] The through electrode substrate 1 has a substrate 100 having a through hole 90 formed therein, and conductive layers 61, 62, 65 are formed to electrically connect a first surface 101 side of the substrate 100 to a second surface 102 side opposite the first surface via the through hole 90, and insulating layers 71, 72, 75, first conductive adhesion layers 11, 15, second conductive adhesion layers 22, 25, and seed layers 31, 32, 35 are formed between the conductive layers 61, 62, 65 and the substrate 100.

[0031] In the following description, the insulating layers 71, 72, and 75 are used to refer to those located on the first surface 101, the second surface 102, and the sidewall of the through hole 90, respectively, and may be referred to as the insulating layer 70 when there is no need to distinguish between them. The first conductive adhesive layers 11 and 15 are used to refer to those located on the first surface 101 and the sidewall of the through hole 90, respectively, and may be referred to as the first conductive adhesive layer 10 when there is no need to distinguish between them. The second conductive adhesive layers 22 and 25 are used to refer to those located on the second surface 102 and the sidewall of the through hole 90, respectively, and may be referred to as the second conductive adhesive layer 20 when there is no need to distinguish between them.

[0032] The first conductive adhesive layer 10 and the second conductive adhesive layer 20 may be formed directly on the insulating layer 70, or may be formed via another intermediate layer (not shown). The seed layers 31, 32, and 35 are used to refer to those located on the first surface 101, the second surface 102, and the sidewall of the through hole 90, respectively, and may be referred to as the seed layer 30 when there is no need to distinguish between them. The first conductive adhesive layer 10 and the second conductive adhesive layer 20 may be provided so as to be in direct contact with the seed layer 30, or may be formed via another intermediate layer (not shown). The conductive layers 61, 62, and 65 are used to refer to those located on the first surface 101, the second surface 102, and the sidewall of the through hole 90, respectively. It is used to refer to the part located on the side wall of the through hole 90, and when there is no need to distinguish between them, they may be referred to as the conductive layer 60.

[0033] On the first surface 101, the second surface 102, and the sidewall of the through hole 90, insulating layers 71, 72, and 75 are formed according to the material of the substrate 100. Furthermore, on the insulating layer 75, a first conductive adhesive layer 15 is formed on a part of the first surface side of the sidewall of the through hole. Also, a second conductive adhesive layer 25 is formed on a part of the second surface side of the sidewall of the through hole. In the illustrated example, the first conductive adhesive layer 15 and the second conductive adhesive layer 25 are separated near the center of the through hole. Here, in FIG. 13, the ends of the first conductive adhesive layer 15 and the second conductive adhesive layer 25 are clear, but the ends of the first conductive adhesive layer 15 and the second conductive adhesive layer 25 may not be clear, and may have a shape in which the film thickness gradually decreases, for example.

[0034] The first conductive adhesive layer 15 and the second conductive adhesive layer 25, which are separated near the center of the through hole, are electrically connected by a seed layer 35 formed on the upper layer thereof. The seed layer 35 is formed in contact with the first conductive adhesive layer 15, the second conductive adhesive layer 25, and a part of the insulating layer 75 on the side wall of the through hole exposed from the first conductive adhesive layer 15 and the second conductive adhesive layer 25. Furthermore, a conductive layer 65 is formed on the upper layer of the seed layer 35. The conductive layer 65 conducts electricity between the first surface 101 and the second surface 102 of the substrate 100. The conductive layers 61 and 62 may play the role of wiring, a land, an electrode, or the like. The remaining part of the through hole 90 (inside the conductive layer 65) is filled with an insulating filler member 85. The insulating filler member 85 can typically be made of an organic insulating material.

[0035] As shown in FIG. 13, an interlayer insulating layer 81 is formed on the first surface 101 of the substrate 100, and an interlayer insulating layer 82 is formed on the second surface 102 of the substrate 100. The interlayer insulating layers 81, 82, and the insulating filler member 85 may be made of the same material or may be made of different materials. In the following description, when the interlayer insulating layers 81 and 82 are not distinguished from each other, they may be referred to as an interlayer insulating layer 80. In this example, the interlayer insulating layer 80 is formed directly on the first surface 101 and the second surface 102 of the substrate 100, but another structure (such as wiring, transistors, capacitors, coils, etc.) may be included between them. Although a structure having one each of the conductive layers 61, 62 and the interlayer insulating layer 80 is shown, the present invention is not limited to this, and may be a structure having two or more layers stacked.

[0036] The interlayer insulating layer 80 can be made of an organic insulating material, an inorganic insulating material, or the like. Alternatively, the interlayer insulating layer 80 may be made by laminating an organic insulating material and an inorganic insulating material. The opening 111 is formed on the first surface 101 side of the substrate 100, and the opening 112 is formed on the second surface 102 side of the substrate 100. When the openings 111 and 112 are not to be distinguished from each other, they may be referred to as the opening 110.

[0037] [Process flow of through electrode substrate 1] 2 is a flow chart for explaining a method for manufacturing a through-hole electrode substrate according to the first embodiment of the present invention. The method for manufacturing a through-hole electrode substrate includes a step of forming a through-hole 90 penetrating a first surface 101 of a substrate 100 and a second surface 102 opposite to the first surface 101 (step S201), a step of forming a first conductive adhesive layer 10 from the first surface 101 side (step S202), a step of forming a second conductive adhesive layer 20 from the second surface 102 side (step S203), a step of forming a seed layer 30 that is in contact with the first conductive adhesive layer 10 and the second conductive adhesive layer 20 and is disposed in contact with the sidewall of the through-hole 90 exposed from the first conductive adhesive layer 10 and the second conductive adhesive layer 20 (step S204), a step of forming a conductive layer 60 on the seed layer 30 (step S205), and a step of etching the first conductive adhesive layer, the second conductive adhesive layer, the seed layer, and the conductive layer to form a desired pattern (step S206). Each step will be described below in order with reference to the drawings. In addition, in the manufacturing method of the through hole electrode substrate, other processes are performed between each process. This does not preclude the inclusion of

[0038] [Method of manufacturing the through electrode substrate 1] First, step S201 shown in Fig. 2 will be described with reference to Figs. 3 and 4. Fig. 3 is a schematic diagram showing a cross section of a substrate provided with a through hole in the manufacturing method of the through electrode substrate according to the first embodiment of the present invention. First, a through hole 90 penetrating a first surface 101 and a second surface 102 is formed in a substrate 100.

[0039] In this example, the substrate 100 is a silicon substrate. The substrate 100 may be made of a silicon compound such as silicon carbide, a semiconductor such as gallium arsenide, quartz, glass, sapphire, or a laminate of these materials, in addition to silicon. The thickness of the substrate 100 is not particularly limited, but is, for example, 100 μm to 800 μm.

[0040] The through hole 90 can be formed by forming a mask (not shown) on one surface (for example, the first surface 101) of the substrate 100, and then performing dry etching such as RIE (Reactive Ion Etching) or DRIE (Deep RIE), sandblasting, laser processing, or the like. The through hole 90 may also be formed by forming a bottomed hole that does not penetrate in the thickness direction in the substrate, and then polishing the surface opposite to the one surface (for example, the second surface 102) to open it. The size of the opening of the through hole 90 is not particularly limited, and can be, for example, 10 μm to 100 μm. The shape of the through hole 90 is not limited, and is typically circular, but may be rectangular or polygonal other than circular. Although it depends on the application of the through electrode substrate 1, for example, the aspect ratio of the through hole 90 is 5 or more, and preferably 8 or more. The aspect ratio refers to a value obtained by dividing the value of the depth of the through hole 90 by the size of the opening of the through hole. The substrate 100 has one or more such through holes 90 disposed therein.

[0041] In each figure, the through hole 90 is shown to have a straight shape in the thickness direction of the through electrode substrate 1, but is not limited thereto, and may be, for example, a tapered shape in which the opening on the first surface 101 side is larger than the opening on the second surface 102 side as shown in Fig. 15. Also, without being limited to a tapered shape, the through hole 90 may be a concave type in which the central portion thereof is concave as shown in Fig. 16, or a convex type in which the central portion thereof is convex as shown in Fig. 17.

[0042] Fig. 4 is a schematic diagram showing a cross section of a substrate on which an insulating layer is formed in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. An insulating layer 70 (insulating layers 71, 72, 75) is formed on the substrate 100 shown in Fig. 3 as shown in Fig. 4. This insulating layer 70 may be formed at least on the side wall of the through hole 90.

[0043] The insulating layer 70 may be a single layer film made of one material selected from inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride, and organic insulating materials such as polyimide and benzocyclobutene, or a laminated film made of two or more materials. The insulating layer 70 is formed by a CVD method (plasma CVD method, thermal CVD method, etc.), a PVD method (evaporation method and sputtering method, etc.), a thermal oxidation method, a spray coating method, etc. There is no particular limit to the thickness of the insulating layer 70 as long as the desired insulating properties are obtained, but it can be, for example, 0.5 μm to 5 μm. Note that another structure may be present between the first surface 101 of the substrate 100 and the insulating layer 71. Note that when the substrate is an insulating substrate such as quartz, glass, or sapphire, the presence of the insulating layer 70 is optional.

[0044] Next, step S202 shown in Fig. 2 will be described with reference to Fig. 5. Fig. 5 is a schematic diagram showing a cross section of a substrate on which a first conductive adhesive layer is formed from one side surface in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. The first conductive adhesive layer 10 is formed on the insulating layer 70 from the first surface 101 side. The first conductive adhesive layer 10 is formed by a sputtering method.

[0045] The sputtering method is a film formation method in which film formation atoms reach the substrate in a state of having high energy, but in order to stabilize the discharge, for example, Ar gas of 0.1 to 1.0 Pa is introduced into the chamber. The clusters of the film formation source sputtered by the ions of Ar gas have a high probability of colliding with Ar atoms during flight, changing the direction of travel and reducing the directivity of the clusters. As a result, when a film is formed from the first surface side on a through hole having a high aspect ratio of more than 5, as shown in FIG. 5, the position of the end of the first conductive adhesive layer 15 formed on the side wall of the through hole is less than half the depth of the through hole based on the first surface 101 side.

[0046] In the present invention, the deposition atoms reach the substrate in a sputtering method with high energy, and the deposition atoms reach the substrate and react with the undercoat film with excess energy, resulting in good adhesion. When a film is deposited by the sputtering method, a mixing layer is formed at the interface between the undercoat film and the sputtered film, where the undercoat atoms and the deposition atoms are mixed, and it is believed that the mixing layer provides good adhesion between the undercoat film and the sputtered film.

[0047] Next, step S203 shown in FIG. 2 will be described with reference to FIG. 6. FIG. 6 is a schematic diagram showing a cross section of a substrate on which a second conductive adhesive layer is formed from the other side in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. A second conductive adhesive layer 20 (second conductive adhesive layers 22, 25) is formed on the substrate 100 shown in FIG. 5. This second conductive adhesive layer 20 is formed on the insulating layer 70 from the second surface 102 side opposite to the first surface 101. The second conductive adhesive layer 20 is formed by a sputtering method similar to the first conductive adhesive layer 10. As a result, as shown in FIG. 6, the position of the end of the second conductive adhesive layer 25 formed on the side wall of the through hole is a position half or less of the depth of the through hole based on the second surface 102 side, and the first conductive adhesive layer 15 and the second conductive adhesive layer 25 are formed separately on the side wall of the through hole. At this time, insulating layer 75 on the side wall of the through hole is exposed near the center between first surface 101 and second surface 102 in the depth direction of the through hole.

[0048] The first conductive adhesive layer 15 and the second conductive adhesive layer 25 have good adhesion to the underlying insulating layer 75, and may be made of, for example, titanium (Ti), chromium (Cr), aluminum (Al), compounds thereof, or alloys thereof. The thickness of the first conductive adhesive layer 15 and the second conductive adhesive layer 25 is not particularly limited, but may be, for example, 50 nm to 400 nm. The first conductive adhesive layer 15 and the second conductive adhesive layer 25 may be made of the same material or different materials.

[0049] In the first embodiment, an example in which a film with high adhesion is formed by the sputtering method has been described, but the present invention is not limited to this. For example, good adhesion can be obtained by using a material that utilizes reactivity with the undercoat film. For example, when the undercoat film is silicon oxide, good adhesion can be obtained by using a material with a lower oxide formation enthalpy than silicon. For example, when titanium, whose oxide formation enthalpy is lower than silicon, is formed on silicon oxide, oxygen atoms near the interface between silicon oxide and titanium tend to become titanium oxide, which is more stable than silicon oxide, and bond with titanium by utilizing the energy of film formation. In other words, the interface between silicon oxide and titanium is chemically bonded, so good adhesion can be obtained. In other words, it is considered that good adhesion can be obtained by using a material used as the conductive layer, whose oxide or nitride of the conductive layer has a lower formation enthalpy than the oxide or nitride of the undercoat film.

[0050] Next, step S204 shown in FIG. 2 will be described with reference to FIGS. 7 and 8. 1A and 1B are schematic diagrams showing a cross section of a substrate on which a seed layer is formed from one side in a method for manufacturing a through hole electrode substrate according to a first embodiment of the present invention. The seed layer 30 (seed layers 31 and 35) is formed by oblique deposition. The method of oblique deposition will be described in detail later (see FIGS. 19 and 20).

[0051] FIG. 8 is a schematic diagram showing a cross section of a substrate on which a seed layer is formed from the other side in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. Here, the seed layer 30 (seed layers 32, 35) is formed by oblique deposition from the second surface side of the substrate in the same manner as in FIG. 7. Then, the seed layer 35 having a substantially uniform thickness in the depth direction of the through hole is formed inside the through hole by performing oblique deposition from the second surface side as well. Here, in the first embodiment, an example of forming the seed layer 30 by oblique deposition is shown, but the present invention is not limited to this, and for example, electroless plating or the like can also be used. As a result, most of the seed layer 30 formed by a method other than sputtering is formed on the first conductive adhesive layer 15 and the second conductive adhesive layer 25 on the side wall of the through hole 90, thereby improving adhesion to the lower layer. Here, the seed layer 35 is formed so as to overcome the step portion of the first conductive adhesive layer 15 and the second conductive adhesive layer 25. It is believed that the contact between the seed layer 35 and the first conductive adhesive layer 15 or the second conductive adhesive layer 25 at the step portion provides an anchor effect, making it possible to suppress peeling of the seed layer 30.

[0052] Here, the seed layer 30 functions as a layer that supplies power in electrolytic plating when a conductive layer is formed in a later step. The seed layer 30 is desirably made of the same material as the conductive layer, and copper (Cu), silver (Ag), gold (Au), etc. can be used. There is no particular limit to the thickness of the seed layer 30, but it is preferable to set it in the range of 0.1 μm to 1.0 μm, for example. It is preferable to set it in the range of 600 nm to 900 nm. By setting it in such a range, the thickness of the conductive layer formed in the through hole 90 can be controlled uniformly.

[0053] Next, step S205 shown in FIG. 2 will be described with reference to FIG. 9. FIG. 9 is a schematic diagram showing a cross section of a substrate on which a conductive layer 60 is formed in a manufacturing method of a through hole electrode substrate according to a first embodiment of the present invention. Although not shown, in order to obtain the structure shown in FIG. 9, a film-like resist called a photosensitive dry film resist is formed on both sides of the substrate 100 on which the seed layer 30 is formed, and a mask is formed by photolithography in which an area in which a conductive layer is to be formed is opened. Next, in a masked state, power is supplied to the seed layer 30 to perform electrolytic plating, thereby forming a conductive layer 60 (conductive layers 61, 62, 65) as shown in FIG. 9. For example, Cu, Ag, Au, etc. can be used as the material of the conductive layer. Among them, Cu is preferable because of its low material cost. By forming it in a thin film along the side wall of the through hole 90, production efficiency is improved. There is no particular limit to the thickness of the conductive layer 60, but it is preferable to set it to a range of 1 μm or more and 20 μm or less. It is preferable to set it to 3 μm or more and 15 μm or less. By setting the thickness in such a range, a through electrode having good electrical conductivity can be obtained.

[0054] The conductive layer 60 may be formed on the sidewall of the through hole 90 and on the first or second surface of the substrate in separate steps, but production efficiency is improved by performing the above simultaneously in an electrolytic plating step. Since the conductive layer is formed on the sidewall of the through hole 90 and on the first or second surface of the substrate in the electrolytic plating step, the film thickness of the conductive layer at each location is approximately the same. After that, the mask is removed from the substrate 100. Through the above steps, the structure shown in FIG. 9 can be obtained.

[0055] Next, step S206 shown in FIG. 2 will be described with reference to FIG. 10. FIG. 10 is a schematic diagram showing a cross section of a substrate on which a conductive layer has been patterned in the method for manufacturing a through hole electrode substrate according to the first embodiment of the present invention. The structure shown in FIG. 10 is obtained by etching the structure shown in FIG. 9 from the first surface side and the second surface side. Dry etching is used for the etching. Alternatively, wet etching may be used. Dry etching has the advantage of shortening the process since the first conductive adhesive layer, the second conductive adhesive layer, and the seed layer can be etched at the same time, and the conductive layer 65 formed on the side wall of the through hole is hardly etched, so that deformation of the conductive layer 65 can be suppressed. Wet etching has the advantage of shortening the process since the first surface and the second surface can be etched at the same time.

[0056] In the first embodiment, a method in which the conductive layer is formed after patterning has been described. However, if the conductive layer 60 is not used, the seed layer 30 may be patterned after it is formed.

[0057] 11 is a schematic diagram showing a cross section of a substrate on which a first photosensitive resin layer is formed in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. A first photosensitive resin layer 89 is formed on the second surface 102 side of the substrate 100 shown in FIG. 10. The first photosensitive resin layer 89 is formed, for example, by using a negative dry film resist with a laminating device or the like. A part of the first photosensitive resin layer 89 is introduced into the through hole 90. The dry film resist used is not limited to the negative type, and may be a positive type.

[0058] At this time, the opening of the through-hole 90 on the second surface 102 side is blocked by the first photosensitive resin layer 89. Note that the first photosensitive resin layer 89 may be formed using a material other than a dry film resist as long as it is formed so as to block the opening of the through-hole 90 on the second surface 102 side. It may also be a liquid resist with high viscosity (for example, 20 cp or more).

[0059] 12 is a schematic diagram showing a cross section of a substrate on which a second photosensitive resin layer is formed in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. As shown in FIG. 12, a second photosensitive resin layer 88 is formed on the first surface 101 side of the substrate 100. The second photosensitive resin layer 88 is formed, for example, by using a negative type dry film resist with a laminating device or the like. The dry film resist used is not limited to the negative type, and may be a positive type.

[0060] At this time, lamination is performed with the environment around the substrate 100 in a reduced pressure state (pressure lower than atmospheric pressure). As a result, the dry film resist of the second photosensitive resin layer 88 is introduced into the through hole 90 and contacts the first photosensitive resin layer 89. As a result, the photosensitive resin layer is filled into the through hole 90, that is, the insulating filling member 85 is formed. In the state shown in FIG. 10, the first photosensitive resin layer 89 and the second photosensitive resin layer 88 are filled into the part (the part surrounded by the conductive layer 65) that remained as a space in the through hole 90. Since the lamination of the second photosensitive resin layer 88 is performed while exhausting the gas in the through hole 90 under a reduced pressure state, it is possible to suppress the generation of voids and the like in the through hole 90. In this specification, filling is not limited to the case where the space (voids, etc.) is completely eliminated, and does not exclude the case where a small space remains inside the through hole 90.

[0061] When forming the second photosensitive resin layer 88, it is desirable to make the pressure of the environment surrounding the substrate 100 as close to a vacuum as possible when laminating the dry film resist. This makes it easier to introduce the dry film resist into the through-hole 90. The method is not limited to the above, and after filling the through-hole 90 with an insulating material, the photosensitive resin layers may be formed on the first and second surfaces.

[0062] FIG. 13 is a schematic diagram showing a cross section of a substrate in which the first and second photosensitive resin layers are patterned in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. The first photosensitive resin layer 89 and the second photosensitive resin layer 88 formed on the substrate 100 in FIG. 12 are patterned by photolithography. As a result, as shown in FIG. 13, an opening 111 leading to the conductive layer 61 and an opening 112 leading to the conductive layer 62 are formed. After this, the photosensitive resin layer may be baked. FIG. 13 shows the insulating film obtained from the photosensitive resin layer in this manner. 1 shows interlayer insulating layer 80 (interlayer insulating layers 81, 82) and insulating filler member 85. Note that the thickness of interlayer insulating layer 80 on first surface 101 and second surface 102 of substrate 100 is, for example, 10 μm to 100 μm, but may be thinner or thicker.

[0063] The through electrode substrate 1 manufactured as described above can electrically connect the first surface 101 side and the second surface 102 side of the substrate 100 by the conductive layers (first conductive adhesive layer 15, second conductive adhesive layer 25, seed layer 35, conductive layer 65) formed along the sidewall of the through hole 90. Furthermore, by filling the inside of the through hole 90 with an insulating resin as described above, the manufacturing process can be shortened compared to filling with a metal material by electrolytic plating, and the occurrence of voids inside the through hole 90 can also be suppressed.

[0064] Fig. 14 is a schematic diagram showing a cross section of a substrate on which a wiring layer is formed in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. The through hole electrode substrate 1 manufactured as shown in Fig. 13 may be used to form wiring layers 121 and 122 as shown in Fig. 14. A wiring layer is formed on the through hole electrode substrate 1 shown in Fig. 13, and the wiring layer is patterned by photolithography to obtain the wiring layers 121 and 122. Such wiring layers may be multi-layered via an interlayer insulating film.

[0065] The thus obtained wiring layers 121, 122 (usually the outermost wiring layer when multi-layered) are used as connection terminals when connecting to other through electrode substrates 1 and the like.

[0066] [Method of forming seed layer 30] Here, the method for forming the seed layer 30 shown in FIG. 7 and FIG. 8 will be described in detail. In the step of forming the seed layer 30, since it is necessary to form a conductive layer inside a through hole having a high aspect ratio such as an aspect ratio exceeding 5, a film forming method with good film adhesion is required. Examples of methods with good film adhesion include a method in which film growth occurs isotropically with respect to the growth surface such as electroless plating, and a method in which film adhesion is good due to the high anisotropy of the film formation source and the positioning of the substrate such as oblique deposition. Here, as an example, a film formation method by oblique deposition will be described in detail. Note that oblique deposition is deposition in which the deposition material flying from the deposition source reaches the substrate surface at an angle with respect to the perpendicular line to the substrate surface on which the film is to be formed.

[0067] Fig. 18 is a schematic diagram of a film forming apparatus by oblique deposition in the manufacturing method of the through hole electrode substrate according to the first embodiment of the present invention. The film forming apparatus shown in Fig. 18 is composed of a vacuum chamber 150 that achieves a high vacuum for deposition, a turbo molecular pump (TMP) 220, and a gate valve 222. The vacuum chamber 150 includes a holder 141 that fixes the substrate in a state in which an angle 132 formed by a line parallel to the flight direction of the deposition material and a perpendicular line 130 of the substrate is inclined at a constant angle in a plane including the two lines, a rotating support column 140 that fixes the holder 141 and rotates the holder 141 while maintaining the constant angle 132, a crucible 210 that holds a deposition source 212, and an electron gun 200 that generates an electron beam 201 that evaporates the deposition source 212.

[0068] During deposition, in order to improve the linearity of the evaporated deposition material 214, a TMP is used at a speed of, for example, 10 -3 ~10 -6It is desirable to perform deposition in a vacuum state with a high vacuum pressure of Pa. When deposition is performed in such a high vacuum state, the probability of the evaporated deposition material 214 colliding with gas molecules in the chamber is reduced, so that the change in the traveling direction due to scattering is reduced. As a result, the deposition material 214 reaches the substrate with very high linearity, so that sufficient coverage can be obtained even for through-holes with a high aspect ratio, for example, an aspect ratio exceeding 5. In addition, deposition can be performed while rotating the rotary support column 140 with the holder 141 tilted, so that a film can be formed uniformly in the circumferential direction of the through-hole.

[0069] FIG. 19 is a schematic diagram showing a cross-sectional view of a through hole electrode substrate on which a conductive layer is formed by oblique deposition in a manufacturing method of a through hole electrode substrate according to a first embodiment of the present invention. The deposition material 214 evaporated by the electron beam 201 is incident on the substrate at a certain angle 132 with respect to a perpendicular line 130 of the substrate. The angle 132 may be determined according to the aspect ratio of the through hole on which a deposition film is to be formed, and may be, for example, an angle at which the deposition film reaches at least an end 79 of the space where the first conductive adhesive layer 15 and the second conductive adhesive layer 25 are separated. Preferably, for example, the angle may be an angle at which the deposition film reaches an end 29 of the conductive layer inside the through hole formed on the opposite side of the surface on which deposition is performed. Specifically, when oblique deposition is performed on a through hole with an aspect ratio of 5, a deposition film can be formed with good coverage by setting the angle with respect to the perpendicular line to the first or second surface of the substrate to be 5° or more and 20° or less.

[0070] <Second embodiment> In the first embodiment, only one layer of the first conductive adhesive layer 10 or the second conductive adhesive layer 20 is sandwiched between the insulating layer 70 on the side wall of the through hole and the seed layer 30. In the second embodiment, a structure in which multiple layers are sandwiched between the insulating layer 70 on the side wall of the through hole and the seed layer 30 will be described.

[0071] 20 is a schematic diagram showing a cross section of a substrate on which a conductive layer is formed in a method for manufacturing a through hole electrode substrate according to a second embodiment of the present invention. The difference from FIG. 13 is that a third conductive adhesive layer 40 (third conductive adhesive layers 41, 42, 45) is formed between the first conductive adhesive layer 10 and the seed layer 30, and a fourth conductive adhesive layer 50 (fourth conductive adhesive layers 51, 52, 55) is formed between the second conductive adhesive layer 20 and the seed layer 30.

[0072] The third conductive adhesive layer 40 and the fourth conductive adhesive layer 50 may be made of a material having good adhesion to the seed layer 30, and preferably, may be made of the same material as the seed layer 30. In this case, the third conductive adhesive layer 40 and the fourth conductive adhesive layer 50 may be considered to serve as a part of the seed layer. It is also preferable that the third conductive adhesive layer 40 has good adhesion to the first conductive adhesive layer 10, and the fourth conductive adhesive layer 50 has good adhesion to the second conductive adhesive layer 20. In the second embodiment, since the third conductive adhesive layer 40 and the fourth conductive adhesive layer 50 are formed by a sputtering method, good adhesion is obtained at the interface between the first conductive adhesive layer 10 and the third conductive adhesive layer 40. Similarly, good adhesion is obtained at the interface between the second conductive adhesive layer 20 and the fourth conductive adhesive layer 50. This is considered to be because a mixing layer of the layers in contact with each other is formed at the interface between the first conductive adhesive layer 10 and the third conductive adhesive layer 40 and at the interface between the second conductive adhesive layer 20 and the fourth conductive adhesive layer 50. Furthermore, when the third conductive adhesive layer 40, the fourth conductive adhesive layer 50, and the seed layer 30 are made of the same material, good adhesion can be obtained even at the interfaces therebetween.

[0073] <Third embodiment> In the third embodiment, a semiconductor device manufactured using the through electrode substrate 1 in the first or second embodiment will be described.

[0074] FIG. 21 is a diagram showing a semiconductor device according to a third embodiment of the present invention. In the semiconductor device 1000, three through electrode substrates 300 (310, 320, 330) are stacked and connected to an LSI substrate 400. The through electrode substrate 310 has a semiconductor element such as a DRAM formed thereon, and has connection terminals 511 and 512 formed of wiring layers 121 and 122, etc. One or more of these through electrode substrates 300 may be a through electrode substrate made of a substrate formed of glass, sapphire, etc. The connection terminal 512 is connected to a connection terminal 500 of the LSI substrate 400 by a bump 610. The connection terminal 511 is connected to a connection terminal 522 of the through electrode substrate 320 by a bump 620. The connection terminal 521 of the through electrode substrate 320 and the connection terminal 532 of the through electrode substrate 330 are also connected to each other by a bump 630. The bumps 600 (610, 620, 630) are made of a metal such as indium, copper, or gold.

[0075] In addition, when the through electrode substrate 1 is laminated, it is not limited to three layers, but it may be two layers, or even four or more layers. In addition, the connection between the through electrode substrate 1 and other substrates is not limited to the one using bumps, and other bonding techniques such as eutectic bonding may be used. In addition, the through electrode substrate 1 and other substrates may be bonded by applying and baking polyimide, epoxy resin, or the like.

[0076] Fig. 22 is a diagram showing another example of the semiconductor device according to the third embodiment of the present invention. In the semiconductor device 1000 shown in Fig. 22, semiconductor chips (LSI chips) 410, 420 such as a MEMS device, a CPU, a memory, etc., and a through electrode substrate 300 are stacked and connected to an LSI substrate 400.

[0077] The through electrode substrate 300 is disposed between the semiconductor chip 410 and the semiconductor chip 420, and is connected by bumps 640 and 650. The semiconductor chip 410 is placed on the LSI substrate 400, and the LSI substrate 400 and the semiconductor chip 420 are connected by wires 700. In this example, the through electrode substrate 300 is used as an interposer for stacking a plurality of semiconductor chips for three-dimensional mounting, and a multi-function semiconductor device can be manufactured by stacking a plurality of semiconductor chips each having a different function. For example, by making the semiconductor chip 410 a three-axis acceleration sensor and the semiconductor chip 420 a two-axis magnetic sensor, a semiconductor device that realizes a five-axis motion sensor in one module can be manufactured.

[0078] When the semiconductor chip is a sensor formed by a MEMS device, the sensing result may be output as an analog signal. In this case, a low-pass filter, an amplifier, and the like may also be formed on the semiconductor chip or the through electrode substrate 300.

[0079] FIG. 23 is a diagram showing another example of the semiconductor device according to the third embodiment of the present invention. The above two examples (FIGS. 21 and 22) are three-dimensional mounting, but this example is an example applied to a combined two-dimensional and three-dimensional mounting. In the example shown in FIG. 23, six through electrode substrates 300 (310-360) are stacked and connected to an LSI substrate 400. However, not only are all the through electrode substrates 300 stacked, but they are also arranged side by side in the substrate in-plane direction. One or more of these through electrode substrates 300 (310-360) may be a through electrode substrate made of a substrate formed of glass, sapphire, or the like.

[0080] In the example of Fig. 23, the through electrode substrates 310 and 350 are connected onto the LSI substrate 400, the through electrode substrates 320 and 340 are connected onto the through electrode substrate 310, the through electrode substrate 330 is connected onto the through electrode substrate 320, and the through electrode substrate 360 ​​is connected onto the through electrode substrate 350. As in the example shown in Fig. 22, even if the through electrode substrate 300 is used as an interposer for connecting a plurality of semiconductor chips, such two-dimensional and three-dimensional combined mounting is possible. For example, the through electrode substrates 330, 340, 360, etc. may be replaced with semiconductor chips.

[0081] The semiconductor device 1000 manufactured as described above is mounted on various electrical devices such as mobile terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigation systems, etc.), and home appliances. EXAMPLES

[0082] The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.

[0083] Example 1 will be described based on FIG. 20 of the second embodiment. First, a silicon substrate with a thickness of 400 μm was prepared as the substrate 100. Next, a resist pattern was formed on one surface (here, the first surface 101) of the silicon substrate by photolithography, and the silicon substrate was etched in the thickness direction via the resist pattern by DRIE to form a large number of through holes with a diameter of φ50 μm. The aspect ratio of the through holes was 8.

[0084] After forming the through-holes and removing the resist pattern, a silicon oxide film was formed on the surface of the silicon substrate and the side walls of the through-holes by thermal oxidation. Here, the thermal oxidation was performed by heat treatment at 1050°C in an oxygen atmosphere to form a silicon oxide film of 500 nm.

[0085] Next, from the first surface 101 side of the silicon substrate, 100 nm of Ti, which has good adhesion to the silicon oxide film formed on the silicon substrate, was formed as the first conductive adhesive layer 10 by a sputtering method. Then, from the second surface 102 side of the silicon substrate, 100 nm of Ti was formed as the second conductive adhesive layer 20 by a sputtering method similar to the above. Here, the sputtering method was performed by DC magnetron sputtering under the following conditions. Target-substrate distance = 100mm Argon gas flow rate = 30sccm Chamber pressure = 0.5 Pa ·Power=3kW ·Film forming temperature = room temperature

[0086] Next, from the first surface 101 side of the silicon substrate, Cu was formed to a thickness of 100 nm as the third conductive adhesive layer 40 by a sputtering method. Then, from the second surface 102 side of the silicon substrate, Cu was formed to a thickness of 100 nm by a sputtering method in the same manner as above as the fourth conductive adhesive layer 50, to form a sputter seed layer. Here, the sputtering method was performed by DC magnetron sputtering under the following conditions. Target-substrate distance = 100mm Argon gas flow rate = 30sccm Chamber pressure = 0.3 Pa Power = 5kW ·Film forming temperature = room temperature

[0087] Next, a Cu film was formed as a seed layer 30 by oblique deposition on the Cu formed by sputtering from the first surface 101 side of the silicon substrate to a thickness of 800 nm, forming a deposition seed layer. Furthermore, a Cu film was formed by oblique deposition from the second surface 102 side of the silicon substrate in the same manner to a thickness of 800 nm. At this time, the inclination of the silicon substrate was adjusted so that the angle between a line parallel to the flight direction of the deposition material and a perpendicular line to the silicon substrate was 8°. The deposition method was performed under the following conditions. ·Distance between evaporation source and substrate = 100mm Ultimate vacuum pressure = 5 x 10 -4 Pa The angle between the line parallel to the flight direction of the deposition material and the perpendicular line to the substrate is 8°

[0088] Next, a plating resist pattern was formed on both sides of the silicon substrate so as to cover the areas where a conductive film should not be formed in electrolytic plating, which will be described later. Then, a Cu film was formed to a thickness of 10 μm on the areas exposed from the plating resist pattern by electrolytic plating, forming a conductive film.

[0089] After that, the plating resist pattern was removed, and then the unnecessary deposition seed layer and sputter seed layer on both sides of the silicon substrate were sequentially removed. A polar substrate was obtained.

[0090] A continuity test was carried out on the through electrode substrate obtained as described above, and it was confirmed that the continuity was properly ensured in the chip including 1024 through electrodes.

[0091] As described above, according to the first embodiment, in a through electrode substrate having through holes with a high aspect ratio, it is possible to obtain a through electrode substrate having high adhesion of the conductive layer in the through hole. [Explanation of symbols]

[0092] 1: Through-hole electrode substrate 10, 11, 15: First conductive adhesive layer 20, 22, 25, 29: second conductive adhesive layer 30, 31, 32, 35: seed layer 40, 41, 42, 45: third conductive adhesive layer 50, 51, 52, 55: fourth conductive adhesive layer 60, 61, 62, 65: Conductive layer 70, 71, 72, 85: Insulating layer 79: End 80, 81, 82: Interlayer insulating layers 85: Insulating filler material 88: Second photosensitive resin layer 89: First photosensitive resin layer 90:Through hole 100: Substrate 101: 1st page 102:Second side 110, 111, 112: Opening 121, 122: Wiring layer 130: Perpendicular 132: Angle between the substrate normal and the deposition direction 140: Rotating support column 141: Holder 150: Vacuum chamber 200: Electron gun 201: Electron beam 210: Crucible 212: Vapor deposition source 214: Evaporation materials 222: Gate valve 300, 310, 320, 330, 340, 350, 360: through-hole electrode substrate 400: LSI board 410, 420: Semiconductor chips 500, 511, 512, 521, 522, 531: Connection terminal 600, 610, 620, 630, 640, 650: Bump 700: Wire 1000: Semiconductor device

Claims

1. a substrate having a through hole penetrating a first surface and a second surface; a first conductive layer provided on a portion of the through hole on the first surface side; a second conductive layer provided in a portion of the second surface side of the through hole and spaced apart from the first conductive layer; a third conductive layer between the first conductive layer and the second conductive layer; an insulating member between the third conductive layers facing each other in a cross-sectional view; the first conductive layer has a first end on a sidewall of the through hole; the second conductive layer has a second end on the sidewall; The third conductive layer is a through electrode substrate that covers the first end and the second end.

2. The through hole electrode substrate according to claim 1 , wherein the first end and the second end are spaced apart from each other.

3. the first conductive layer has a first sidewall at the first end; the second conductive layer has a second sidewall at the second end; The through electrode substrate according to claim 1 , wherein the third conductive layer covers the first side wall and the second side wall.

4. The through electrode substrate according to claim 1 , wherein the third conductive layer is in contact with the side wall or an insulating layer provided on the side wall between the first conductive layer and the second conductive layer.

5. The through electrode substrate according to claim 4 , wherein the first conductive layer and the second conductive layer are in contact with the side wall or the insulating layer.

6. The through electrode substrate according to claim 1 , wherein the third conductive layer is provided continuously between the first conductive layer and the second conductive layer, and connects the first conductive layer and the second conductive layer.

7. The through hole electrode substrate according to claim 1 , wherein the substrate is a semiconductor substrate.

8. A substrate having a through hole penetrating a first surface and a second surface; a first conductive layer provided on a portion of the through hole on the first surface side; a second conductive layer provided in a portion of the second surface side of the through hole and spaced apart from the first conductive layer; a third conductive layer between the first conductive layer and the second conductive layer, the first conductive layer has a first end on a sidewall of the through hole; the second conductive layer has a second end on the sidewall; the third conductive layer covers the first end and the second end; The through electrode substrate further includes an insulating material disposed continuously from the first surface side to the second surface side on an inner side of the through hole relative to the third conductive layer.

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