Substrate Processing Equipment

Abstract

To control the deformation of a mounting table.SOLUTION: In a substrate processing apparatus having a mounting table on which a substrate is placed, the mounting table has a first plate, a first temperature control mechanism for controlling the temperature of the first plate, a second plate located below the first plate, a second temperature control mechanism for controlling the temperature of the second plate, and a fastening member for fastening the first plate and the second plate.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] It is known that deformation such as warping occurs in a substrate due to a process (see, for example, Patent Document 1). It is also known that deformation such as warping occurs in a mounting table due to thermal stress (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2005-72286 A [Patent Document 2] JP 2000-21962 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can control the deformation of a mounting table. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus having a mounting table for mounting a substrate, the mounting table comprising: An electrostatic chuck; A first flow path is provided inside The electrostatic chuck has an inner peripheral region in which the electrostatic chuck is disposed, and an outer periphery located outside the inner peripheral region. The heating device includes a first plate, a second plate disposed below the first plate and having a second flow path provided therein, a temperature control mechanism that supplies a heat transfer medium to the first flow path and the second flow path and controls temperatures of the first plate and the second plate, and a fastening member that fastens the first plate and the second plate. the second plate is made of ceramics, and the fastening members are screws that are inserted from the first plate side into through holes provided on the outer periphery of the first plate and into screw holes provided on the outer periphery of the second plate and screw into the screw holes to fasten the first plate and the second plate together. A substrate processing apparatus is provided. Effect of the Invention

[0006] According to one aspect, the deformation of the mounting table can be controlled. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment. [Diagram 2] 5A to 5C are diagrams showing an example of temperature control of the mounting table according to the embodiment. [Diagram 3] 5A to 5C are diagrams showing an example of temperature control of the mounting table according to the embodiment. [Figure 4] 6A and 6B are diagrams showing another example of temperature control of the mounting table according to the embodiment. [Diagram 5] 6A and 6B are diagrams showing another example of temperature control of the mounting table according to the embodiment. [Figure 6] 5A to 5C are diagrams showing an example of a temperature control method according to the embodiment. [Figure 7] FIG. 2 is a diagram showing an example of an arrangement of a plurality of sensors according to the embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Substrate processing equipment] First, an example of a substrate processing apparatus according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of a substrate processing apparatus according to an embodiment. The substrate processing apparatus 1 is a capacitively coupled type apparatus.

[0010] The substrate processing apparatus 1 has a chamber 10. The chamber 10 provides an internal space 10s therein. The chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The internal space 10s is provided inside the chamber body 12. The chamber body 12 is made of, for example, aluminum. A corrosion-resistant film is provided on the inner wall surface of the chamber body 12. The corrosion-resistant film may be an oxide film made of ceramics such as alumina (aluminum oxide) or yttrium oxide and anodized.

[0011] A passage 12p is formed in a sidewall of the chamber body 12. The substrate W passes through the passage 12p when being transferred between the internal space 10s and the outside of the chamber 10. The passage 12p can be opened and closed by a gate valve 12g. The gate valve 12g is provided along the sidewall of the chamber body 12.

[0012] A support 13 is provided on the bottom of the chamber body 12. The support 13 is made of an insulating material. The support 13 has a substantially cylindrical shape. The support 13 extends upward from the bottom of the chamber body 12 in the internal space 10s. An edge ring 25 (also called a focus ring) that surrounds the periphery of the substrate is provided on the support 13. The edge ring 25 has a substantially cylindrical shape and may be made of silicon or the like.

[0013] The substrate processing apparatus 1 further includes a mounting table 14. The mounting table 14 is supported by a support portion 13. The mounting table 14 is provided in the internal space 10s. The mounting table 14 is configured to support the substrate W within the chamber 10, i.e., the internal space 10s.

[0014] The mounting table 14 includes a first plate 18 and an electrostatic chuck 20 according to an exemplary embodiment. The mounting table 14 may further include a second plate 16. The second plate 16 is made of a conductor such as aluminum or titanium and has a substantially disk-like shape. The first plate 18 is provided on the upper portion of the second plate 16. The first plate 18 is made of a conductor such as aluminum or titanium and has a substantially disk-like shape. The first plate 18 and the second plate 16 may be made of ceramics. However, the first plate 18 and the second plate 16 are preferably made of the same type of metal (conductive member). By making the first plate 18 and the second plate 16 of a conductive member, the friction between the first plate 18 and the second plate 16 is larger than when they are made of ceramics. Therefore, it is possible to improve the controllability of the deformation of the mounting table 14 (substrate mounting surface 20a) described later.

[0015] The first plate 18 and the second plate 16 are fastened to the outer periphery of each plate by screws 19. The screws 19 are provided across the contact surfaces of the first plate 18 and the second plate 16 and are an example of a fastening member that fastens the first plate 18 and the second plate 16 together.

[0016] The electrostatic chuck 20 is provided on the first plate 18. The electrostatic chuck 20 is fixed to the first plate 18 by an adhesive layer provided between the electrostatic chuck 20 and the first plate 18. An electrode of the electrostatic chuck 20 is connected to a DC power supply 20p via a switch 20s. When a DC voltage is applied to the electrode from the DC power supply 20p, the substrate W is held by the electrostatic chuck 20 by electrostatic attraction. The electrostatic chuck 20 supports the substrate W. The outer peripheral surface of the first plate 18 and the outer peripheral surface of the second plate 16 are surrounded by a support portion 13. The electrostatic chuck 20 does not have to be provided on the mounting table 14.

[0017] A first flow path 18f is provided inside the first plate 18. A heat transfer medium (e.g., a refrigerant) is supplied to the first flow path 18f from a first chiller unit 21a provided outside the chamber 10 via a pipe 22a. The first chiller unit 21a can adjust the temperature of the heat transfer medium to an arbitrary temperature. The heat transfer medium supplied to the first flow path 18f is returned to the first chiller unit 21a via a pipe 22b.

[0018] A second flow path 16f is provided inside the second plate 16. A heat transfer medium (e.g., a refrigerant) is supplied to the second flow path 16f from a second chiller unit 21b provided outside the chamber 10 via a pipe 23a. The second chiller unit 21b can adjust the temperature of the heat transfer medium to an arbitrary temperature. The heat transfer medium supplied to the second flow path 16f is returned to the second chiller unit 21b via a pipe 23b. The first flow path 18f and the second flow path 16f are different flow paths, and the heat transfer medium passing through the first flow path 18f and the heat transfer medium passing through the second flow path 16f can be temperature-controlled separately.

[0019] The first flow path 18f and the first chiller unit 21a are an example of a first temperature adjustment mechanism of the first plate 18. The first temperature adjustment mechanism may be at least one of a heater and a Peltier element. The second flow path 16f and the second chiller unit 21b are an example of a second temperature adjustment mechanism of the second plate 16. The second temperature adjustment mechanism may be at least one of a heater and a Peltier element.

[0020] The substrate processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (for example, He gas) from a heat transfer gas supply mechanism to between the upper surface of the electrostatic chuck 20 and the lower surface of the substrate W.

[0021] The substrate processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the mounting table 14. The upper electrode 30 is supported on the upper part of the chamber body 12 via a member 32. The member 32 is made of an insulating material. The upper opening of the chamber body 12 is closed by the upper electrode 30.

[0022] The upper electrode 30 may include a top plate 34 and a support 36. The bottom surface of the top plate 34 is the bottom surface on the side of the internal space 10s and defines the internal space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates little Joule heat. A plurality of gas discharge holes 34a are formed in the top plate 34. The plurality of gas discharge holes 34a penetrate the top plate 34 in the plate thickness direction.

[0023] The support 36 detachably supports the top plate 34. The support 36 is made of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support 36. A plurality of gas holes 36b are formed in the support 36. The plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are connected to the plurality of gas discharge holes 34a, respectively. A gas inlet 36c is formed in the support 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0024] A gas supply unit including a gas source group 40, a flow rate controller group 44, and a valve group 42 is connected to the gas supply pipe 38. The gas source group 40 is connected to the gas supply pipe 38 via the flow rate controller group 44 and the valve group 42. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of opening and closing valves. The flow rate controller group 44 includes a plurality of flow rate controllers. Each of the plurality of flow rate controllers of the flow rate controller group 44 is a mass flow controller or a pressure control type flow rate controller. Each of the plurality of gas sources of the gas source group 40 is connected to the gas supply pipe 38 via the corresponding flow rate controller of the flow rate controller group 44 and the corresponding opening and closing valve of the valve group 42. The power source 70 is connected to the upper electrode 30. The power source 70 applies a voltage to the upper electrode 30 to draw positive ions present in the internal space 10s to the top plate 34.

[0025] In the substrate processing apparatus 1, a shield 46 is detachably provided along the inner wall surface of the chamber body 12. The shield 46 is also provided on the outer periphery of the support portion 13. The shield 46 prevents reaction products such as etching by-products from adhering to the chamber body 12. The shield 46 is formed, for example, by forming a corrosion-resistant film on the upper surface of a member made of aluminum. The corrosion-resistant film can be an oxide film such as alumina or yttrium oxide.

[0026] A baffle plate 48 is provided between the support 13 and the side wall of the chamber body 12. The baffle plate 48 is formed by forming a corrosion-resistant film on the upper surface of a member made of, for example, aluminum. The corrosion-resistant film may be an oxide film such as alumina or yttrium oxide. A plurality of through holes are formed in the baffle plate 48. An exhaust port 12e is provided below the baffle plate 48 and at the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a pressure adjustment valve and a vacuum pump such as a turbo molecular pump.

[0027] The substrate processing apparatus 1 includes a first high frequency power supply 62 that applies high frequency HF power for generating plasma. The first high frequency power supply 62 is configured to generate high frequency HF power in order to generate plasma from a gas in the chamber 10. The frequency of the high frequency HF is, for example, within a range of 27 MHz to 100 MHz.

[0028] The first high frequency power supply 62 is electrically connected to the first plate 18 via a matching box 66. The matching box 66 has a matching circuit. The matching circuit of the matching box 66 is configured to match the impedance of the load side (the mounting table 14 side) of the first high frequency power supply 62 to the output impedance of the first high frequency power supply 62. In another embodiment, the first high frequency power supply 62 may be electrically connected to the upper electrode 30 via the matching box 66.

[0029] The substrate processing apparatus 1 may further include a second high frequency power supply 64 that applies high frequency LF power for attracting ions. The second high frequency power supply 64 is configured to generate high frequency LF power. The high frequency LF has a frequency suitable for mainly attracting ions into the substrate W, and is, for example, a frequency within a range of 400 kHz to 13.56 MHz. Alternatively, the high frequency LF may be a pulsed voltage having a rectangular waveform.

[0030] The second high frequency power supply 64 is electrically connected to the first plate 18 via a matching box 68. The matching box 68 has a matching circuit. The matching circuit of the matching box 68 is configured to match the impedance of the load side (the mounting table 14 side) of the second high frequency power supply 64 to the output impedance of the second high frequency power supply 64.

[0031] The substrate processing apparatus 1 may further include a control unit 80. The control unit 80 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input / output interface, and the like. The control unit 80 controls each unit of the substrate processing apparatus 1. In the control unit 80, an operator can use the input device to input commands and the like to manage the substrate processing apparatus 1. In addition, the control unit 80 can visualize and display the operating status of the substrate processing apparatus 1 using the display device. Furthermore, a control program and recipe data are stored in the storage unit of the control unit 80. The control program is executed by the processor of the control unit 80 to execute various processes in the substrate processing apparatus 1. The processor of the control unit 80 executes the control program and controls each unit of the substrate processing apparatus 1 according to the recipe data, whereby various processes, for example, a plasma processing method, are executed in the substrate processing apparatus 1.

[0032] The control unit 80 also controls the first chiller unit 21a connected to the first flow path 18f of the first plate 18 and the second chiller unit 21b connected to the second flow path 16f of the second plate 16. The temperature of the substrate W is adjusted by heat exchange between the heat transfer medium flowing through the first flow path 18f and the first plate 18, and heat exchange between the heat transfer medium flowing through the second flow path 16f and the second plate 16. Furthermore, the temperature of the substrate W is adjusted by heat exchange between the first plate 18 and the second plate 16, and heat exchange between the first plate 18 and the electrostatic chuck 20.

[0033] Furthermore, in the mounting table 14 having such a configuration, not only is the first plate 18 provided with the first flow path 18f, but the second plate 16 is also provided with the second flow path 16f, so that the temperatures of the first plate 18 and the second plate 16 can be controlled separately. This makes it possible to actively control the deformation of the mounting table 14. Note that the deformation of the mounting table 14 also includes control to make the mounting table 14 flat.

[0034] [Controlling the shape of the mounting table] An example of the shape control of the mounting table 14 by controlling the temperature of the mounting table 14 according to the embodiment will be described with reference to Figs. 2 and 3. Figs. 2 and 3 are diagrams showing an example of the temperature control of the mounting table 14 according to the embodiment. The screws 19 in Figs. 2 and 3 are screwed into the screw holes 19b formed on the upper surface of the outer periphery of the second plate 16 via the through holes 19a formed on the outer periphery of the first plate 18 and penetrating the first plate 18. The first plate 18 and the second plate 16 are fastened by the screws 19 across the contact surfaces between the first plate 18 and the second plate 16. Note that a through hole may be provided in the second plate 16, and a screw hole may be formed in the lower surface of the first plate for screwing.

[0035] The first plate 18 and the second plate 16 are firmly fastened together by screws 19. Therefore, when a temperature change occurs in the first plate 18 or the second plate 16, thermal stress is generated in the first plate 18 or the second plate 16.

[0036] For example, as shown in (a) of Fig. 2, the heat transfer medium flowing through the first flow passage 18f is controlled to 0°C to control the temperature of the first plate 18, and the heat transfer medium flowing through the second flow passage 16f is controlled to -100°C to control the temperature of the second plate 16. Next, as shown in (b) of Fig. 2, while maintaining the temperature of the heat transfer medium flowing through the first flow passage 18f at 0°C, the temperature of the heat transfer medium flowing through the second flow passage 16f is controlled to 100°C to control the temperature of the second plate 16.

[0037] When the state of FIG. 2(a) is shifted to the state of FIG. 2(b) in this way, the temperature of the second plate 16 changes from −100° C. to 100° C., while the temperature of the first plate 18 remains at 0° C. and does not change. Therefore, the second plate 16 expands more vertically and horizontally than the first plate 18. The first plate 18 and the second plate 16 are firmly fastened by the screws 19. Therefore, the second plate 16 is prevented from expanding in the horizontal direction, and thermal stress (compressive stress) is generated in the second plate 16. In addition, tensile stress is generated in the first plate 18, and the electrostatic chuck 20 and the first plate 18 are deformed in a concave shape toward the substrate mounting surface 20a side.

[0038] Next, the temperature control when the electrostatic chuck 20 is deformed to a convex shape toward the substrate mounting surface 20a side will be described with reference to Fig. 3. As shown in Fig. 3(a), the temperature of the first plate 18 is controlled by controlling the heat transfer medium flowing through the first flow passage 18f to 0°C, and the temperature of the second plate 16 is controlled by controlling the heat transfer medium flowing through the second flow passage 16f to 100°C. Next, as shown in Fig. 3(b), the temperature of the heat transfer medium flowing through the first flow passage 18f is maintained at 0°C, while the temperature of the heat transfer medium flowing through the second flow passage 16f is controlled to -100°C to control the temperature of the second plate 16.

[0039] In this way, when the state of FIG. 3(a) is shifted to the state of FIG. 3(b), the temperature of the second plate 16 changes from 100° C. to −100° C., and the temperature of the first plate 18 remains at 0° C. and does not change. Therefore, the second plate 16 shrinks more vertically and horizontally than the first plate 18. The first plate 18 and the second plate 16 are firmly fastened by the screws 19. Therefore, the second plate 16 is prevented from shrinking in the horizontal direction, and thermal stress (tensile stress) is generated in the second plate 16. In addition, a compressive stress is generated in the first plate 18, and the electrostatic chuck 20 and the first plate 18 are deformed in a convex shape toward the substrate mounting surface 20a side. As a result, the mounting table 14 can be actively warped in the direction of the warp of the substrate W in accordance with the warp of the substrate W.

[0040] Since the first plate 18 and the second plate 16 are firmly fastened by the screws 19, a strong frictional force is generated between the lower surface of the first plate 18 and the upper surface of the second plate 16. However, if the temperature of the first plate 18 or the second plate 16 is changed rapidly, a tensile stress (or a compressive stress) stronger than the frictional force is rapidly generated, causing slippage. As a result, the first plate 18 or the second plate 16 may not be deformed. Therefore, in order to control the deformation of the substrate mounting surface 20a, it is desirable to control the temperature of the first plate 18 or the second plate 16 within a range in which strong thermal stress is not generated. Specifically, it is desirable to raise or lower the temperature so that the difference in temperature change between the first plate 18 and the second plate 16 is 3° C. / min or less.

[0041] In this manner, in the embodiment, by controlling the temperature of the heat transfer medium in the second flow path 16f, it is possible to actively control the deformation of the mounting table 14. For example, when it is desired to warp the mounting table 14 in the same direction as the substrate W, the warp of the substrate W is measured, and the mounting table 14 can be actively warped in the warp direction of the substrate W according to the measurement result.

[0042] In the embodiment, the temperature of the heat transfer medium in the first flow path 18f is not changed. That is, the shape of the substrate mounting surface 20a can be freely controlled by changing the temperature of the second plate 16 while keeping the temperature of the first plate 18 fixed at a temperature suitable for the process.

[0043] The temperature control method according to the embodiment includes a step of measuring the shape of the substrate W, and a step of controlling the temperature of the heat transfer medium flowing through the second flow path 16f of the second plate 16 based on the measured shape of the substrate W. According to this temperature control method, by providing a temperature control mechanism on both the first plate 18 and the second plate 16, the deformation of the mounting table 14 can be actively controlled according to the shape of the substrate W. As a result, the substrate mounting surface 20a of the electrostatic chuck 20 can be deformed in the direction of the warp of the substrate W, the adhesion between the substrate W and the electrostatic chuck 20 can be improved, and the controllability of the temperature of the substrate W can be improved. As a result, the temperature distribution within the surface of the substrate can be reduced, and the etching characteristics (etching rate, etc.) of the substrate W can be improved. The shape of the substrate W may be measured from the state of reflected light of the laser light of the substrate W placed on the transport arm, or may be estimated by measuring the state of the contact surface of the substrate W placed on the transport arm, or may be measured by other known methods.

[0044] [Shape control of the mounting table (other examples)] Next, another example of shape control by temperature control of the mounting table 14 according to the embodiment will be described with reference to Fig. 5. Fig. 4 and Fig. 5 are diagrams showing another example of temperature control of the mounting table 14 according to the embodiment.

[0045] For example, as shown in FIG. 4A, the heat transfer medium flowing through the first flow path 18f is controlled to 40° C. to control the temperature of the first plate 18, and the heat transfer medium flowing through the second flow path 16f is controlled to 40° C. to control the temperature of the second plate 16. At this time, the substrate mounting surface 20a is in a flat state. Next, as shown in FIG. 4B, the heat transfer medium flowing through the first flow path 18f is controlled to 20° C. to control the temperature of the first plate 18, and the heat transfer medium flowing through the second flow path 16f is controlled to 80° C. to control the temperature of the second plate 16. Next, as shown in FIG. 4C, the temperature of the heat transfer medium flowing through the second flow path 16f is kept at 80° C., and the temperature of the heat transfer medium flowing through the first flow path 18f is controlled to 40° C. to adjust the temperature of the first plate 18. Then, as shown in FIG. 4(d), the temperature of the heat transfer medium flowing through the first flow path 18f is kept at 40° C., while the temperature of the heat transfer medium flowing through the second flow path 16f is controlled to 40° C., thereby regulating the temperature of the second plate 16.

[0046] As shown in FIG. 4(a), the first plate 18 and the second plate 16 are controlled to the same temperature. At this time, the substrate mounting surface 20a is in a flat state. From this state, as shown in FIG. 4(b), the temperature of the first plate 18 is lowered from 40° C. to 20° C., and the temperature of the second plate 16 is raised from 40° C. to 80° C. As a result, the first plate 18 contracts and the second plate 16 expands. The first plate 18 and the second plate 16 are firmly fastened together by the screws 19. Therefore, the second plate 16 is prevented from expanding in the horizontal direction, and thermal stress (compressive stress) is generated in the second plate 16. In addition, tensile stress is generated in the first plate 18. Furthermore, the first plate 18 is prevented from contracting in the horizontal direction, and thermal stress (tensile stress) is generated in the first plate 18. As a result, the electrostatic chuck 20 and the first plate 18 are deformed into a concave shape toward the substrate mounting surface 20a.

[0047] Next, as shown in FIG. 4(c), the temperature of the heat transfer medium flowing through the second flow path 16f is kept at 80° C., while the temperature of the heat transfer medium flowing through the first flow path 18f is controlled to 40° C., thereby regulating the temperature of the first plate 18.

[0048] In this case, the first plate 18 expands because the temperature of the first plate 18 is higher than that in the state shown in FIG. 4B. The first plate 18 and the second plate 16 are firmly fastened by the screws 19. Therefore, the horizontal expansion of the first plate 18 is prevented, and thermal stress (compressive stress) is generated in the first plate 18. As a result, the electrostatic chuck 20 and the first plate 18 are deformed in a convex shape toward the substrate mounting surface 20a side. In the state shown in FIG. 4B, the electrostatic chuck 20 and the first plate 18 are deformed in a concave shape toward the substrate mounting surface 20a side, so that in the state shown in FIG. 4C, the substrate mounting surface 20a is substantially flat.

[0049] Next, as shown in (d) of Figure 4, the temperature of the heat transfer medium flowing through the first flow path 18f is kept at 40°C, while the temperature of the heat transfer medium flowing through the second flow path 16f is controlled to 40°C, thereby controlling the temperature of the second plate 16.

[0050] In this case, the second plate 16 contracts because its temperature becomes lower than that in the state shown in Fig. 4(c). The first plate 18 and the second plate 16 are firmly fastened by the screws 19. This prevents the second plate 16 from contracting in the horizontal direction, and thermal stress (tensile stress) is generated in the second plate 16. In addition, a compressive stress is generated in the first plate 18, and the electrostatic chuck 20 and the first plate 18 are deformed in a convex shape toward the substrate mounting surface 20a side.

[0051] Next, an example of temperature control when the electrostatic chuck 20 is deformed to a concave shape toward the substrate mounting surface 20a side will be described with reference to FIG. 5. As shown in FIG. 5(a), the temperature of the first plate 18 is controlled by controlling the heat transfer medium flowing through the first flow passage 18f to 40° C., and the temperature of the second plate 16 is controlled by controlling the heat transfer medium flowing through the second flow passage 16f to 40° C. At this time, the substrate mounting surface 20a is in a flat state. Next, as shown in FIG. 5(b), the temperature of the first plate 18 is controlled by controlling the heat transfer medium flowing through the first flow passage 18f to 80° C., and the temperature of the second plate 16 is controlled by controlling the heat transfer medium flowing through the second flow passage 16f to 0° C. Next, as shown in FIG. 5(c), the temperature of the first plate 18 is controlled by controlling the temperature of the heat transfer medium flowing through the first flow passage 18f to 40° C. while keeping the temperature of the heat transfer medium flowing through the second flow passage 16f at 0° C. Then, as shown in (d) of Figure 5, the temperature of the heat transfer medium flowing through the first flow path 18f is kept at 40°C, while the temperature of the heat transfer medium flowing through the second flow path 16f is controlled to 40°C, thereby controlling the temperature of the second plate 16.

[0052] As shown in FIG. 5(a), the first plate 18 and the second plate 16 are controlled to the same temperature. The substrate mounting surface 20a is in a flat state. From this state, as shown in FIG. 5(b), the temperature of the first plate 18 is increased from 40° C. to 80° C. The temperature of the second plate 16 is decreased from 40° C. to 0° C. The first plate 18 expands and the second plate 16 contracts. The first plate 18 and the second plate 16 are firmly fastened together by the screws 19. This prevents the second plate 16 from contracting in the horizontal direction, and thermal stress (tensile stress) is generated in the second plate 16. This also causes compressive stress in the first plate 18. Furthermore, the first plate 18 is prevented from expanding in the horizontal direction, and thermal stress (compressive stress) is generated in the first plate 18. As a result, the electrostatic chuck 20 and the first plate 18 are deformed into a convex shape toward the substrate mounting surface 20a.

[0053] Next, as shown in (c) of Figure 5, the temperature of the heat transfer medium flowing through the second flow path 16f is kept at 0°C, while the temperature of the heat transfer medium flowing through the first flow path 18f is controlled to 40°C, thereby controlling the temperature of the first plate 18.

[0054] In this case, the temperature of the first plate 18 becomes lower than that in the state shown in FIG. 5B, and the first plate 18 contracts. The first plate 18 and the second plate 16 are firmly fastened by the screws 19. This prevents the first plate 18 from contracting in the horizontal direction, and thermal stress (tensile stress) is generated in the first plate 18. This causes the electrostatic chuck 20 and the first plate 18 to deform in a concave shape toward the substrate mounting surface 20a. In the state shown in FIG. 5B, the electrostatic chuck 20 and the first plate 18 are deformed in a convex shape toward the substrate mounting surface 20a, and therefore, in the state shown in FIG. 5C, the substrate mounting surface 20a is substantially flat.

[0055] Next, as shown in (d) of Figure 5, the temperature of the heat transfer medium flowing through the first flow path 18f is kept at 40°C, while the temperature of the heat transfer medium flowing through the second flow path 16f is controlled to 40°C, thereby controlling the temperature of the second plate 16.

[0056] In this case, the second plate 16 expands because the temperature of the second plate 16 becomes higher than that in the state shown in Fig. 5(c). The first plate 18 and the second plate 16 are firmly fastened by the screws 19. This prevents the second plate 16 from expanding in the horizontal direction, and thermal stress (compressive stress) is generated in the second plate 16. Accordingly, tensile stress is generated in the first plate 18, and the electrostatic chuck 20 and the first plate 18 are deformed in a concave shape toward the substrate mounting surface 20a side.

[0057] In FIG. 4B, the temperature of the second plate 16 is increased and the temperature of the first plate 18 is decreased in order to make the substrate mounting surface 20a concave. However, the temperature of both the first plate 18 and the second plate 16 may be increased to make the substrate mounting surface 20a concave. For example, the temperature of the first plate 18 is increased from 40° C. to 60° C., and the temperature of the second plate 16 is increased from 40° C. to 80° C. In this case, the temperature change of the second plate 16 is larger than the temperature change of the first plate 18, so the second plate 16 expands more. Therefore, the horizontal expansion of the second plate 16 is hindered, and thermal stress (compressive stress) is generated in the second plate 16. In addition, tensile stress is generated in the first plate 18. This allows the substrate mounting surface 20a to be concave. In addition, the temperature of the first plate 18 may not be changed and only the temperature of the second plate 16 may be increased, or the temperature of the second plate 16 may not be changed and only the temperature of the first plate 18 may be decreased.

[0058] Furthermore, in order to make the substrate mounting surface 20a convex, the temperatures of the first plate 18 and the second plate 16 may be increased so that the temperature change of the first plate 18 is larger than the temperature change of the second plate 16. The temperature of the first plate 18 may not be changed and only the temperature of the second plate 16 may be decreased, or the temperature of the first plate 18 may not be changed and only the temperature of the second plate 16 may be increased.

[0059] In this manner, in the embodiment, the deformation of the mounting table 14 can be actively controlled by controlling the temperature of the heat transfer medium in the first flow path 18f and / or the second flow path 16f. That is, the temperature changes of the first plate 18 and the second plate 16 are combined. As a result, even if the temperatures of the first plate 18 and the second plate 16 are controlled to be the same as those in the initial state (FIG. 4(a) or FIG. 5(a)), the shape of the substrate mounting surface 20a can be changed (FIG. 4(d) or FIG. 5(d)). In addition, in the examples of FIG. 4 and FIG. 5, the shape of the substrate mounting surface 20a in the initial state is flat, but it may be concave or convex. That is, by changing the temperatures of the first plate 18 and the second plate 16 according to the shape of the substrate mounting surface 20a in the initial state, the shape of the substrate mounting surface 20a can be arbitrarily changed regardless of the temperatures of the first plate 18 and the second plate 16.

[0060] Various types of control are possible for the temperature control of the heat transfer medium flowing through the first flow path 18f and the heat transfer medium flowing through the second flow path 16f described above. For example, the control unit 80 may control the temperature of the heat transfer medium flowing through the first flow path 18f and the heat transfer medium flowing through the second flow path 16f so that the first plate 18 and the second plate 16 have the same temperature at the same timing. This allows the first plate 18 and the second plate 16 to have the same temperature at the same timing. Therefore, the mounting table 14 does not deform due to the difference in thermal stress generated in the first plate 18 and the second plate 16. Note that, when only such control is performed, the first chiller unit 21a and the second chiller unit 21b may be the same chiller unit. That is, the first chiller unit 21a may be connected to the first flow path 18f and the second flow path 16f, and the second chiller unit 21b may not be provided.

[0061] [Temperature control method] Next, a temperature control method according to an embodiment will be described with reference to Fig. 6. Fig. 6 is a diagram showing an example of the temperature control method according to an embodiment.

[0062] When this process is started, the control unit 80 acquires shape information of the substrate mounting surface 20a (step S1). The shape information of the substrate mounting surface 20a may be acquired by measurement using a sensor. Alternatively, the shape information may be acquired by referring to the history of temperature changes of the first plate 18 and the second plate 16 stored in the storage unit and information indicating the correlation between the temperature changes of the first plate 18 and the second plate 16 and the shape change of the first plate.

[0063] Next, the control unit 80 acquires the temperatures of the first plate 18 and the second plate 16 (step S2). The temperatures of the first plate 18 and the second plate 16 may be the temperatures of the heat transfer medium flowing through the first flow path 18f and the heat transfer medium flowing through the second flow path 16f. Alternatively, they may be temperatures measured by temperature sensors provided on the first plate 18 and the second plate 16, respectively.

[0064] Next, the control unit 80 acquires information on the warpage of the substrate W (step S3). The information on the warpage of the substrate W may be information measured by a measuring device different from the substrate processing apparatus 1, or information measured by a measuring unit provided inside the substrate processing apparatus 1.

[0065] Next, the control unit 80 determines whether or not to change the shape of the mounting table 14 (substrate mounting surface 20a) (step S4). Whether or not to change the shape of the mounting table 14 may be determined based on the shape information of the substrate mounting surface 20a acquired in step S1 and the warpage information of the substrate W acquired in step S3.

[0066] If the control unit 80 determines in step S4 that the shape of the mounting table 14 is not to be changed, it controls the first plate 18 and the second plate 16 to the same temperature (step S5) and ends this process. That is, the temperature of the heat transfer medium flowing through the first flow path 18f and the temperature of the heat transfer medium flowing through the second flow path 16f are controlled to the same temperature or a given temperature that takes into account the heat input from the plasma, so that no temperature difference occurs between the first plate 18 and the second plate 16.

[0067] In step S4, when the control unit 80 determines that the shape of the mounting table 14 is to be changed, it controls the temperature of the first plate 18 and / or the second plate 16 (step S6) and ends this process. After step S6, a sensor may be used to check whether the substrate mounting surface 20a has been deformed into a desired shape.

[0068] [Shape measurement] Next, an example of measuring the shape of the first plate 18 and controlling the temperature of the heat transfer medium flowing through the first flow path 18f and / or the heat transfer medium flowing through the second flow path 16f based on the measurement result will be described with reference to Fig. 7. Fig. 7 is a diagram showing an example of the arrangement of multiple sensors according to the embodiment.

[0069] The mounting table 14 according to the embodiment may have a plurality of sensors for measuring the shape of the first plate 18. As shown in FIG. 7A, a plurality of strain gauges 81 and 82 are provided on the mounting table 14 as an example of a plurality of sensors. In the example of FIG. 7A, a plurality of strain gauges 81 are attached to the upper surface 18a of the first plate 18 (the lower surface of the electrostatic chuck 20). A plurality of strain gauges 82 are attached to the lower surface 18b of the first plate 18. The plurality of strain gauges 81 may be disposed in an adhesive layer (not shown) between the first plate 18 and the electrostatic chuck 20. A plurality of contraction and expansion values ​​measured by the plurality of strain gauges 81 and 82 are sent to the control unit 80. The control unit 80 measures the shape of the first plate 18 from the measured plurality of contraction and expansion values. Since the surface shape of the electrostatic chuck 20 changes depending on the shape of the first plate 18, the surface shape of the electrostatic chuck 20 can be estimated by measuring the shape of the first plate 18.

[0070] The control unit 80 controls the temperature of the heat transfer medium in the first flow path 18f of the first plate 18 and / or the temperature of the heat transfer medium in the second flow path 16f of the second plate 16 to match the measured shape of the first plate 18.

[0071] In this manner, the temperatures of the first plate 18 and / or the second plate 16 are fed back in accordance with the surface shape of the first plate 18 estimated from the measured values ​​of the multiple strain gauges 81, 82. This makes it possible to actively control the surface shape of the first plate 18 (the surface shape of the electrostatic chuck 20) ​​by controlling the temperature of at least one of the plates in real time.

[0072] However, the arrangement of the multiple strain gauges 81, 82 is not limited to this. The multiple strain gauges 81, 82 may be attached to at least one of the upper surface 18a and the lower surface 18b of the first plate 18, or may be attached to the lower surface of the electrostatic chuck 20. The multiple strain gauges 81, 82 are an example of multiple strain sensors that measure the shape of the first plate, and the multiple strain sensors may be load cells.

[0073] As shown in FIG. 7B, as an example of the plurality of sensors, a plurality of laser interferometers 83 may be provided on the mounting table 14. The plurality of laser interferometers 83 are provided below the second plate 16, and irradiate the lower surface 18b of the first plate 18 with laser light that has passed through a through hole 16a penetrating the second plate 16. The plurality of laser interferometers 83 measure the distance to the lower surface of the first plate 18 based on the time at which the light reflected by the lower surface 18b is received. The control unit 80 measures the shape of the first plate 18 based on the distances acquired from the plurality of laser interferometers 83. Since the surface shape of the electrostatic chuck 20 follows the change in the shape of the first plate 18, the surface shape of the electrostatic chuck 20 can be estimated by measuring the shape of the first plate 18.

[0074] The control unit 80 controls the temperature of the heat transfer medium in the first flow path 18f of the first plate 18 and / or the temperature of the heat transfer medium in the second flow path 16f of the second plate 16 to match the measured shape of the first plate 18.

[0075] In this way, the temperatures of the first plate 18 and / or the second plate 16 are fed back in accordance with the surface shape of the first plate 18 estimated from the measured values ​​of the multiple laser interferometers 83. This makes it possible to actively control the surface shape of the first plate 18 by controlling the temperature of at least one of the plates in real time.

[0076] At this time, an irradiation device such as a focuser is fixed to a reference, and a change in the measured length corresponds to a change in the underside of the electrostatic chuck 20. By feeding back this change, the temperature of the heat transfer medium in the first flow passage 18f of the first plate 18 and / or the temperature of the heat transfer medium in the second flow passage 16f of the second plate 16 is controlled in real time, making it possible to actively control the surface shape of the electrostatic chuck 20.

[0077] The temperature control method for the mounting table 14 includes a step of measuring the shape of the first plate 18, and a step of controlling the temperature control mechanism of the first plate 18 and / or the temperature control mechanism of the second plate 16 based on the measured shape of the first plate 18.

[0078] In the above description, the temperature adjustment mechanism of the first plate 18 and / or the temperature adjustment mechanism of the second plate 16 are controlled in real time based on the measured shape of the first plate 18. However, this is not limited to this, and it is not necessary to measure the shape of the first plate 18. For example, the shape of the first plate 18 may be estimated by referring to the history of temperature changes of the first plate 18 and the second plate 16 stored in the memory unit and information indicating the correlation between the temperature changes of the first plate 18 and the second plate 16 and the shape change of the first plate.

[0079] The information indicating the correlation between the temperature change of the first plate 18 and the second plate 16 and the shape change of the first plate may be obtained by measuring the relationship between the shape change of the first plate 18 and the temperatures of the first temperature adjustment mechanism and the second temperature adjustment mechanism, and storing the information in advance in the storage unit. The storage unit may be a memory of the control unit 80. The information indicating the correlation between the shape of the first plate and the temperature change may be information indicating the correlation between the shape of the first plate and the temperature change for making the shape of the first plate flat. Alternatively, the information may be information indicating the correlation between the shape of the first plate and the temperature change for making the shape of the first plate concave. Alternatively, the information may be information indicating the correlation between the shape of the first plate and the temperature change for making the shape of the first plate convex.

[0080] According to the temperature control method described above, deformation of the mounting table 14 can be controlled. The substrate processing apparatus 1, the mounting table 14, and the temperature control method according to the presently disclosed embodiment should be considered as illustrative in all respects and not restrictive. The above embodiment can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without any contradiction, and can be combined without any contradiction.

[0081] For example, a plasma processing apparatus has been given as an example of a substrate processing apparatus, but the substrate processing apparatus may be an apparatus that performs a predetermined process on a substrate (e.g., a film formation process, an etching process, etc.) and is not limited to a plasma processing apparatus.

[0082] The substrate processing apparatus may be an etching apparatus, a film forming apparatus, an ashing apparatus, a doping apparatus, etc. For example, the substrate processing apparatus may be an ITO film forming apparatus using a sputtering method, or a metal-containing film forming apparatus using an MOCVD method.

[0083] The substrate processing apparatus of the present disclosure can be applied to any type of apparatus, including Atomic Layer Deposition (ALD) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0084] The following is an additional note. [Appendix 1] A substrate processing apparatus having a mounting table for mounting a substrate, The mounting table is A first plate; a first temperature control mechanism that controls the temperature of the first plate; a second plate disposed below the first plate; a second temperature control mechanism that controls the temperature of the second plate; a fastening member that fastens the first plate and the second plate; having The mounting table mounts a substrate on an electrostatic chuck disposed on an upper portion of the first plate; Further, a sensor for measuring a shape of the first plate is provided. The sensors are a plurality of strain sensors provided on at least one of an upper surface, a lower surface of the first plate, and a lower surface of the electrostatic chuck, and configured to measure a shape of the first plate. Substrate processing equipment. [Appendix 2] A substrate processing apparatus having a mounting table for mounting a substrate, The mounting table is A first plate; a first temperature control mechanism that controls the temperature of the first plate; a second plate disposed below the first plate; a second temperature control mechanism that controls the temperature of the second plate; a fastening member that fastens the first plate and the second plate; having The mounting table mounts a substrate on an electrostatic chuck disposed on an upper portion of the first plate; Further, a sensor for measuring a shape of the first plate is provided. the sensor is a plurality of laser interferometers provided below the second plate, which irradiates a lower surface of the first plate with laser light that has passed through a through hole penetrating the second plate, and measures a shape of the first plate; Substrate processing equipment. [Appendix 3] A substrate processing apparatus having a mounting table for mounting a substrate and a control unit, The mounting table is A first plate; a first temperature control mechanism that controls the temperature of the first plate; a second plate disposed below the first plate; a second temperature control mechanism that controls the temperature of the second plate; a fastening member that fastens the first plate and the second plate; having The control unit is Controlling the first temperature adjustment mechanism and the second temperature adjustment mechanism; controlling the first temperature control mechanism and the second temperature control mechanism so that the first plate and the second plate have the same temperature at the same time; Substrate processing equipment. [Appendix 4] A substrate processing apparatus having a mounting table for mounting a substrate and a control unit, The mounting table is A first plate; a first temperature control mechanism that controls the temperature of the first plate; a second plate disposed below the first plate; a second temperature control mechanism that controls the temperature of the second plate; a fastening member that fastens the first plate and the second plate; having The control unit is Controlling the first temperature adjustment mechanism and the second temperature adjustment mechanism; controlling the first temperature control mechanism and the second temperature control mechanism so as to change the temperature of the second plate while keeping the temperature of the first plate constant; Substrate processing equipment. [Appendix 5] The mounting table mounts a substrate on an electrostatic chuck disposed on an upper portion of the first plate. 5. The substrate processing apparatus according to claim 3 or 4. [Appendix 6] a sensor for measuring a shape of the first plate; 6. The substrate processing apparatus according to claim 5. [Appendix 7] The sensors are a plurality of strain sensors provided on at least one of an upper surface, a lower surface of the first plate, and a lower surface of the electrostatic chuck, and configured to measure a shape of the first plate. 7. The substrate processing apparatus according to claim 6. [Appendix 8] the sensor is a plurality of laser interferometers provided below the second plate, which irradiates a lower surface of the first plate with laser light that has passed through a through hole penetrating the second plate, and measures a shape of the first plate; 7. The substrate processing apparatus according to claim 6. [Appendix 9] The fastening members are screws that are inserted into screw holes provided on the outer peripheries of the first plate and the second plate and fasten the first plate and the second plate together. 9. The substrate processing apparatus according to claim 1, [Appendix 10] The first plate and the second plate are formed of the same metal. 10. The substrate processing apparatus according to claim 1, [Appendix 11] 1. A temperature control method for a mounting table having a first plate, a first temperature control mechanism that controls a temperature of the first plate, a second plate disposed below the first plate, a second temperature control mechanism that controls a temperature of the second plate, and a fastening member that fastens the first plate and the second plate, comprising: (a) measuring a shape of the substrate placed on the mounting table; (b) controlling the first temperature control mechanism or the second temperature control mechanism based on the measured shape of the substrate; Including, In the step (b), the first temperature adjustment mechanism or the second temperature adjustment mechanism is controlled by referring to a history of temperature changes of the first plate and the second plate stored in a storage unit in advance and information indicating a correlation between the temperature changes of the first plate and the second plate and the shape change of the first plate. Temperature control method. [Appendix 12] Further, after the step (b), a step (d) of measuring a shape of the first plate is included. 12. The temperature control method of claim 11. [Explanation of symbols]

[0085] 1. Substrate Processing Equipment 10. Chamber 14 Placement table 16 Second Plate 16f Second flow path 18 First Plate 18f First flow path 20 Electrostatic Chuck 20a Substrate mounting surface 21a First chiller unit 21b Second chiller unit 30 Upper electrode 34 Tabletop 36 Support 38 Gas supply pipe 40 Gas Source Group 42 Valve Group 44 Flow Controller Group 46 Shield 48 Baffle Plate 70 Power supply 80 Control section 81,82 Strain gauge 83 Laser Interferometer

Claims

1. A substrate processing apparatus having a mounting table for mounting a substrate, The mounting table is An electrostatic chuck; a first plate having an inner circumferential region in which a first flow path is provided and in which the electrostatic chuck is disposed, and an outer periphery located outside the inner circumferential region; a second plate disposed below the first plate and having a second flow path therein; a temperature control mechanism that supplies a heat transfer medium to the first flow path and the second flow path and controls temperatures of the first plate and the second plate; a fastening member that fastens the first plate and the second plate; having the second plate is made of ceramics; the fastening members are screws that are inserted from the first plate side into through holes provided on the outer periphery of the first plate and into screw holes provided on the outer periphery of the second plate and screw into the screw holes to fasten the first plate and the second plate together; Substrate processing equipment.

2. A control unit for controlling the temperature adjustment mechanism, The control unit is controlling the temperature control mechanism so that the first plate and the second plate have the same temperature at the same time; The substrate processing apparatus according to claim 1 .

3. The first plate is made of ceramics. The substrate processing apparatus according to claim 1 or 2.

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