Plasma Processing Equipment

Abstract

To provide a plasma processing device capable of shielding magnetic fields from environmental magnetic fields including geomagnetism and other devices.SOLUTION: A plasma processing device includes a plasma processing vessel the walls of which are multi-layered structures including layers composed of a material having a higher magnetic permeability than aluminum, a loading / unloading port provided in the wall of the plasma processing chamber for loading and unloading the substrate into and out of the plasma processing chamber, and a substrate support disposed within the plasma processing chamber.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] In a substrate processing apparatus, in order to reduce the influence of an external magnetic field and improve the uniformity of plasma, it has been proposed to provide a magnetic shield outside the processing chamber (Patent Document 1). It has also been proposed to use a magnetically permeable material, such as permalloy, as the magnetic shield (Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2004-022988 A [Patent Document 2] JP 2005-249658 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a plasma processing apparatus capable of shielding from environmental magnetic fields, including the earth's magnetic field, and from magnetic fields from other apparatuses. [Means for solving the problem]

[0005] A plasma processing apparatus according to one aspect of the present disclosure includes a plasma processing vessel having a wall with a multi-layer structure including a layer made of a material having a magnetic permeability higher than aluminum, an input / output port provided in the wall of the plasma processing vessel for loading and unloading a substrate into the plasma processing vessel, and a substrate support disposed within the plasma processing vessel. Effect of the Invention

[0006] According to the present disclosure, it is possible to shield against environmental magnetic fields including the earth's magnetic field and magnetic fields from other devices. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of a plasma processing apparatus according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram illustrating an example of the structure of the shield member according to the present embodiment. [Diagram 3] FIG. 3 is a diagram illustrating an example of the structure of the shield member according to the present embodiment. [Figure 4] FIG. 4 is a diagram illustrating an example of the structure of the shield member according to the present embodiment. [Diagram 5] FIG. 5 is a diagram illustrating an example of the structure of the shield member according to the present embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of the structure of the shield member according to the present embodiment. [Figure 7] FIG. 7 is a diagram illustrating an example of the structure of the shield member according to the present embodiment. [Figure 8] FIG. 8 is a diagram showing an example of a cover for a magnetic shield in this embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the plasma processing apparatus will be described in detail with reference to the accompanying drawings. Note that the disclosed technology is not limited to the following preferred embodiments.

[0009] In recent years, as semiconductor devices become finer, the influence of the earth's magnetic field on plasma is becoming increasingly difficult to ignore. In addition, in a substrate processing system having a plurality of plasma processing apparatuses, the plasma may become biased due to the influence of magnetic fields generated by other adjacent plasma processing apparatuses. In response to this, it is possible to cover the plasma processing apparatuses with a magnetic shield, but it is difficult to cover the substrate loading / unloading port with a magnetic shield. In addition, if the entire substrate processing system is covered with a magnetic shield, it is difficult to shield the magnetic fields generated by other plasma processing apparatuses. Therefore, it is expected to shield the environmental magnetic field including the earth's magnetic field and the magnetic field from other apparatuses.

[0010] [Configuration of plasma processing device] A configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described below. FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an embodiment of the present disclosure. As shown in FIG. 1, the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support 11. In an embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the plasma processing chamber 10 housing.

[0011] The plasma processing chamber 10 has a shield member 101 on the inside of the sidewall 10a. The upper part of the shield member 101 extends horizontally inward and contacts the peripheral edge of the shower head 13. The shield member 101 has a multi-layer structure including a shield layer 102 made of a material having a higher magnetic permeability than aluminum. The sidewall 10a is provided with a load / unload port 103 for loading and unloading the substrate W. The load / unload port 103 is provided with a shutter 104 for opening and closing the load / unload port 103.

[0012] The shutter 104, like the shield member 101, has a multi-layer structure including a shield layer 105 made of a material having a higher magnetic permeability than aluminum. The shutter 104 is driven up and down by a lift member 106 and a drive mechanism 107 to open and close the loading / unloading port 103. That is, when the shutter 104 is closed, the horizontal distance from the periphery of the substrate support 11 to the shield member 101 and the shutter 104 is approximately the same. That is, the distance from the plasma processing space 10s to the magnetic shield is uniform. This allows the shielding of environmental magnetic fields including geomagnetism to be performed uniformly over the entire circumference of the plasma processing chamber 10, and also eliminates bias caused by the magnetic field generated in the plasma processing space 10s being blocked by the magnetic shield. In addition, the plasma processing space 10s is in a state where horizontal magnetic field lines influenced by environmental magnetic fields including geomagnetism and other devices are shielded. Note that other mechanisms for opening and closing the opening of the plasma processing chamber 10, such as a gate valve, can also be made to have the same multi-layer structure as the shutter 104.

[0013] An annular baffle plate 108 having a plurality of vent holes is disposed at the bottom of the plasma processing chamber 10 so as to surround the substrate support 11. The baffle plate 108 prevents leakage of plasma from the plasma processing space 10s to the gas exhaust port 10e. Similarly to the shield member 101 and the shutter 104, the baffle plate 108 has a multi-layer structure including a shield layer 109 therein made of a material having a higher magnetic permeability than aluminum.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0015] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition to the shower head 13, the gas introduction unit may include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0016] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0017] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to a conductive member of the substrate support 11 and / or a conductive member of the showerhead 13. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit. In addition, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0018] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. The second RF generating unit 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signal or signals are provided to the conductive members of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0019] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, the first and second DC signals may be pulsed. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0020] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0021] [Shielding material structure] 2 to 7, the structures of the shield member 101, the shutter 104, and the baffle plate 108 will be described. In the following description, the structures of the shield member 101 will be described as a representative of the shield member 101, the shutter 104, and the baffle plate 108.

[0022] 2 to 7 are diagrams showing an example of the structure of the shielding member in this embodiment. As shown in Fig. 2, the shielding member 101 has a shield layer 121 and a protective film 122 formed on the surface side of the base material 120 exposed to plasma. Also, the shielding member 101 has an anodized film 123 formed on the surface side of the base material 120 not exposed to plasma. In other words, the shielding member 101 has a multi-layer structure having the base material 120, the shield layer 121, the protective film 122, and the anodized film 123. The base material 120 is a layer made of an aluminum-containing material such as an aluminum alloy, and ensures mechanical strength.

[0023] Shield layer 121 corresponds to shield layers 102, 105, and 109 shown in FIG. 1, and is a layer made of a material such as permalloy that has a higher magnetic permeability than aluminum. In the following description, the corresponding shield layer 102 includes shield layers 105 and 109. Shield layer 121 is formed on base material 120 by thermal spraying, deposition, or bonding of a thin plate (sheet material). Bonding includes mechanical bonding, chemical bonding (adhesion), and metallurgical bonding (welding). Aluminum has a magnetic permeability μ≈1.257×10 -6 [H / m] and the relative magnetic permeability μ / μ0 ≈ 1.00, the shield layer 121 may be made of a material whose magnetic permeability and relative magnetic permeability are higher than these values. Examples of materials having a higher magnetic permeability than aluminum include the above-mentioned permalloy and electromagnetic steel (silicon steel). Permalloy has a magnetic permeability μ ≈ 1.0×10 -2 [H / m], and the relative magnetic permeability μ / μ0 ≒ 100,000. In addition, the magnetic permeability of electrical steel (silicon steel) is μ ≒ 5.0 × 10 -3 [H / m], and relative magnetic permeability μ / μ0 ≈ 4000. For the shield layer 121, other materials having a higher magnetic permeability than aluminum, such as iron (Fe), nickel (Ni), cobalt (Co), and alloys containing these, can be used. Note that the thickness of the shield layer 121 is adjusted appropriately according to the application, since the thicker the shield layer 121, the greater the shielding effect.

[0024] The protective film 122 is a layer having plasma resistance, and is the innermost layer of the shield member 101. The protective film 122 is a film formed by, for example, thermal spraying, CVD (Chemical Vapor Deposition), or PVD (Physical Vapor Deposition). The protective film 122 is, for example, an oxide film, and may be a silicon-containing film. The oxide film also includes an anodic oxide film. The protective film 122 may be a film of a compound containing one or more elements of a group III element and a lanthanoid element. Here, the group III element may be one or more elements of yttrium, scandium, and lanthanum. The lanthanoid element may be one or more elements of cerium, dysprosium, and europium. As the compound, one or more compounds of yttria (Y2O3), Sc2O3, Sc2F3, YF3, La2O3, CeO2, Eu2O3, and DyO3 can be used. In addition, the protective film 122 is preferably made of a material that does not generate particles during plasma processing.

[0025] When the protective film 122 is formed by thermal spraying, it is formed by, for example, a ceramic spray coating process. In the ceramic spray coating process, for example, a ceramic such as an oxide containing the above-mentioned elements is used to form a ceramic spray coating by thermal spray coating. Note that a sintering annealing process may be performed after the spray coating. In this way, by forming the protective film 122 on the inside of the shield layer 121, the shield layer 121 is sandwiched between the base material 120 and the protective film 122, so that a material having a high magnetic permeability such as permalloy, which cannot be used as it is due to problems such as metal contamination, electrical properties, and thermal conductivity, can be placed in the plasma processing chamber 10.

[0026] The multi-layer structure of the shield member 101 may be a structure like that of the shield member 101a shown in FIG. 3. The shield member 101a has a shield layer 121 (corresponding to the shield layer 102) on the surface side of the base material 120 exposed to the plasma, a cover layer 124 made of an aluminum-containing material such as an aluminum alloy similar to the base material 120, and a protective film 122. The shield member 101a also has an anodized film 123 formed on the surface side of the base material 120 not exposed to the plasma, similar to the shield member 101. The base material 120 and the cover layer 124 may be interchanged in the multi-layer structure. That is, the shield layer 121 is sandwiched between the base material 120 made of an aluminum alloy or the like and the cover layer 124. In this way, even if the protective film 122 is peeled off, the shield member 101a has the cover layer 124 or the base material 120, so that it is possible to prevent the shield layer 121 from being exposed to the plasma processing space 10s and causing metal contamination. In addition, in accordance with the shield member 101a, the shutter 104a and the baffle plate 108a also have a similar multi-layer structure.

[0027] The multi-layer structure of the shield member 101 may be a structure like that of a shield member 101b shown in FIG. 4. In the shield member 101b, a protective film 122 is formed on the surface side of the base material 120 exposed to the plasma. In the shield member 101b, a shield layer 125 (corresponding to the shield layer 102) and a protective film 126 are formed on the surface side of the base material 120 not exposed to the plasma. The shield layer 125 is a layer made of a material having a higher magnetic permeability than aluminum, such as permalloy, similar to the shield layer 121. The shield layer 125 is formed on the base material 120 by thermal spraying, vapor deposition, film adhesion, or the like. In the same manner as the protective film 122, the protective film 126 is formed by, for example, a protective film such as a ceramic sprayed coating, which is formed by thermal spraying, CVD, or PVD. In other words, since the shield layer 125 of the shield member 101b is located on the surface side of the base material 120 that is not exposed to plasma, an anodized film made of aluminum of the base material 120 cannot be formed on this surface side. For this reason, instead of an anodized film, a protective film 126 is formed on the surface side of the shield layer 125 that is not exposed to plasma. In addition, the shutter 104b and the baffle plate 108b also have a similar multilayer structure to match the shield member 101b.

[0028] The multi-layer structure of the shield member 101 may be a structure like a shield member 101c shown in FIG. 5. The shield member 101c has a shield layer 127 (corresponding to the shield layer 102) as a base material, and a protective film 122 is formed on the surface side of the shield layer 127 exposed to plasma. A protective film 126 is formed on the surface side of the shield layer 127 not exposed to plasma. The shield layer 127 is a layer made of a material having a higher magnetic permeability than aluminum, such as permalloy, similar to the shield layer 121. The protective film 122 and the protective film 126 are formed by, for example, a protective film such as a ceramic spray coating by thermal spraying, CVD, or PVD, similar to the shield member 101b. In the shield member 101c, the shield layer 127 is a base material and has a thickness, so that the magnetic shielding effect can be further improved. In addition, the shutter 104c and the baffle plate 108c are also made of a similar multi-layer structure in accordance with the shield member 101c.

[0029] The multi-layer structure of the shield member 101 may be a structure like a shield member 101d shown in FIG. 6. The shield member 101d uses a sintered body 128 as a base material, and a shield layer 125 (corresponding to the shield layer 102), a cover layer 129 made of an aluminum-containing material such as an aluminum alloy, and an anodized film 123 are formed on the surface side of the sintered body 128 that is not exposed to plasma. The sintered body 128 itself plays the same role as the protective film 122 on the surface side of the sintered body 128 that is exposed to plasma. That is, the sintered body 128 is a layer having plasma resistance, and is formed of ceramics such as oxides containing the above-mentioned various elements. The sintered body 128 may contain Si, SiO2, etc. The sintered body 128 is a consumable material that is consumed by exposure to plasma in the plasma processing space 10s, and when it is consumed, the shield member 101d is replaced.

[0030] The shield layer 125, like the shield layer 121, is a layer made of a material having a higher magnetic permeability than aluminum, such as permalloy. The shield layer 125 is formed on the sintered body 128 by thermal spraying, vapor deposition, film adhesion, or the like. The cover layer 129 is formed on the shield layer 125 by thermal spraying, vapor deposition, film adhesion, or the like. In the shield member 101d, since the cover layer 129 is made of an aluminum-containing material such as an aluminum alloy, the anodized film 123 can be formed on the cover layer 129. Also, instead of the anodized film 123, a protective film such as a ceramic sprayed film may be formed by thermal spraying, CVD, or PVD, like the protective film 122. In addition, the shutter 104d and the baffle plate 108d also have a similar multi-layer structure in accordance with the shield member 101d.

[0031] The multi-layer structure of the shield member 101 may be a structure like that of a shield member 101e shown in FIG. 7. The shield member 101e uses a sintered body 128 as a base material, and a shield layer 125 (corresponding to the shield layer 102) and a protective film 126 are formed on the surface side of the sintered body 128 that is not exposed to plasma. The sintered body 128 itself plays the same role as the protective film 122 on the surface side of the sintered body 128 that is exposed to plasma, similar to the shield member 101d. The shield layer 125 is a layer made of a material having a higher magnetic permeability than aluminum, such as permalloy, similar to the shield member 101d. The shield layer 125 is formed on the sintered body 128 by thermal spraying, vapor deposition, film adhesion, or the like. The protective film 126 is formed by, for example, a protective film such as a ceramic spray coating, by thermal spraying, CVD, or PVD, similar to the shield member 101b. The shield member 101e does not use a layer made of an aluminum-containing material such as an aluminum alloy. That is, when a sintered body or a bulk material such as SiO2, Si, or SiC is originally used for the members of the shield or shutter, a layer of Permalloy or the like may be formed (coated) on the bulk material by thermal spraying, vapor deposition, film adhesion, etc. In addition, in accordance with the shield member 101e, the shutter 104e and the baffle plate 108e also have a similar multi-layer structure.

[0032] [Adding a cover for magnetic shielding] In this embodiment, the shield member 101 is provided on the inner side of the side wall 10a in the plasma processing chamber 10, but a magnetic shield cover covering the plasma processing chamber 10 may be provided. FIG. 8 is a diagram showing an example of a magnetic shield cover in this embodiment. As shown in FIG. 8, the cover 140 is arranged to cover the side and upper surface of the plasma processing chamber 10. In addition, the cover 140 has an opening at a position corresponding to the loading / unloading port 103, allowing the substrate W to be loaded and unloaded into the plasma processing chamber 10. The cover 140 is made of a material having a higher magnetic permeability than aluminum, such as permalloy. Furthermore, the inner and outer surfaces of the cover 140 may be coated with resin or painted to prevent scratches and dirt and as an appearance part. By providing the cover 140, the magnetic shielding effect can be further improved.

[0033] In the above embodiment, the shield layers 102, 109 are provided on the portion extending horizontally inward at the top of the shield member 101 and inside the baffle plate 108, but the shield layers 102, 109 extending horizontally may be omitted. In other words, since the magnetic field lines of the earth's magnetism and magnetic fields generated by other adjacent devices are mainly horizontal, if they can be sufficiently shielded by the shield layers 102, 105 extending vertically of the shield member 101 and the shutter 104, the shield layers 102, 109 extending horizontally can be omitted.

[0034] In the above embodiment, the shield member 101 is provided on the inner side of the side wall 10a of the plasma processing chamber 10, but the present invention is not limited to this. For example, the side wall 10a itself may be configured as the shield member 101.

[0035] As described above, according to this embodiment, the plasma processing apparatus 1 includes a plasma processing container (plasma processing chamber 10) whose walls (side wall 10a, shield member 101) are a multi-layer structure including a layer made of a material having a higher magnetic permeability than aluminum, a loading / unloading port 103 provided in the wall of the plasma processing container for loading / unloading a substrate W into / from the plasma processing container, and a substrate support 11 disposed in the plasma processing container. As a result, it is possible to shield against environmental magnetic fields including geomagnetism and magnetic fields from other devices. Also, it is possible to suppress bias in the magnetic field generated in the plasma processing space 10s.

[0036] Furthermore, according to this embodiment, the loading / unloading port 103 has a shutter 104 with a multi-layer structure that opens and closes the loading / unloading port 103. As a result, the loading / unloading port 103 can also be shielded from environmental magnetic fields including terrestrial magnetism and magnetic fields from other devices.

[0037] In addition, according to the present embodiment, the multi-layer structure further includes a layer composed of an aluminum-containing material, thereby reducing the weight of the plasma processing chamber 10 while improving its thermal and electrical properties.

[0038] Moreover, according to the present embodiment, the multi-layer structure further includes a layer made of a sintered oxide, so that the sintered oxide can be used as the base material of the plasma processing chamber 10.

[0039] According to the present embodiment, the multi-layer structure further includes a plasma-resistant layer formed on the surface exposed to plasma, which prevents metal contamination of the plasma processing space 10s caused by a layer made of a material such as permalloy having a higher magnetic permeability than aluminum, and can shield the plasma processing space 10s from environmental magnetic fields including the earth's magnetic field and magnetic fields from other devices.

[0040] Furthermore, according to the present embodiment, the multi-layer structure further includes a plasma-resistant layer formed on a surface that is not exposed to plasma, thereby preventing exposure of a layer made of a material having a higher magnetic permeability than aluminum, such as permalloy.

[0041] Furthermore, according to this embodiment, the layer having plasma resistance is an oxide film, which prevents the layer made of a material having a higher magnetic permeability than aluminum, such as permalloy, from being exposed.

[0042] According to the present embodiment, the plasma-resistant layer is a silicon-containing film, which prevents exposure of a layer made of a material having a higher magnetic permeability than aluminum, such as permalloy.

[0043] According to the present embodiment, the plasma-resistant layer is a film of a compound containing one or more elements selected from the group III elements and the lanthanoid elements, and as a result, it is possible to prevent exposure of a layer made of a material such as permalloy having a higher magnetic permeability than aluminum.

[0044] According to the present embodiment, the plasma-resistant layer is a film formed by thermal spraying, CVD, or PVD, and as a result, it is possible to prevent exposure of a layer made of a material such as permalloy having a higher magnetic permeability than aluminum.

[0045] According to this embodiment, the plasma-resistant layer is an anodized film, so that the layer made of an aluminum-containing material can be protected.

[0046] Moreover, according to this embodiment, the multilayer structure has, in order from the surface side exposed to plasma, a plasma-resistant layer (protective film 122), a layer (shield layer 121) made of a material having a higher magnetic permeability than aluminum, a layer (base material 120) made of an aluminum-containing material, and an anodized film 123. As a result, it is possible to shield against environmental magnetic fields including geomagnetism and magnetic fields from other devices.

[0047] Moreover, according to this embodiment, the multilayer structure includes, in order from the surface side exposed to plasma, a plasma-resistant layer (protective film 122), a layer (cover layer 124) made of a first aluminum-containing material, a layer (shield layer 121) made of a material having a higher magnetic permeability than aluminum, a layer (base material 120) made of a second aluminum-containing material, and anodized film 123. As a result, it is possible to shield against environmental magnetic fields including geomagnetism and magnetic fields from other devices.

[0048] According to the present embodiment, the material having a higher magnetic permeability than aluminum is Permalloy, which can shield the magnetic field from the environment including the earth's magnetic field and from other devices.

[0049] According to the present embodiment, the material having a higher magnetic permeability than aluminum is magnetic steel, which can shield the magnetic field from the environment including the earth's magnetic field and from other devices.

[0050] Furthermore, according to this embodiment, the plasma processing vessel further includes a cover made of a material having a higher magnetic permeability than aluminum, which can provide better shielding against environmental magnetic fields including the earth's magnetic field and magnetic fields from other devices.

[0051] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0052] In the above embodiment, the capacitively coupled plasma processing apparatus 1 is used as an example to perform processing such as etching on the substrate W using capacitively coupled plasma as a plasma source, but the disclosed technology is not limited to this. As long as the apparatus performs processing on the substrate W using plasma, the plasma source is not limited to capacitively coupled plasma, and any plasma source such as inductively coupled plasma, microwave plasma, magnetron plasma, etc. can be used. [Explanation of symbols]

[0053] 1. Plasma processing equipment 10 Plasma Processing Chamber 10a side wall 11 Substrate support 20 Gas supply section 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 40 Exhaust system 101 Shielding material 102,105,109,121,125,127 Shield layer 103 Loading / unloading gate 104 Shutter 108 Baffle plate 120 Base material 122,126 Protective film 123 Anodized film 124,129 Cover Layer 128 Sintered body 140 Cover W substrate

Claims

1. a plasma processing vessel, the wall of which is a multi-layer structure including a layer made of a material having a magnetic permeability higher than aluminum; a loading / unloading port provided in the wall of the plasma processing chamber for loading / unloading a substrate into / from the plasma processing chamber; a substrate support disposed in the plasma processing chamber; A plasma processing apparatus comprising:

2. The loading / unloading port has a shutter having the multi-layer structure for opening and closing the loading / unloading port. The plasma processing apparatus according to claim 1 .

3. The multi-layer structure further comprises a layer comprised of an aluminum-containing material.

3. The plasma processing apparatus according to claim 1 or 2.

4. The multilayer structure further includes a layer composed of a sintered body of an oxide.

3. The plasma processing apparatus according to claim 1 or 2.

5. The multilayer structure further includes a plasma-resistant layer formed on a surface exposed to plasma.

5. The plasma processing apparatus according to claim 1.

6. The multilayer structure further includes a plasma-resistant layer formed on a surface that is not exposed to plasma.

6. The plasma processing apparatus according to claim 1.

7. The plasma-resistant layer is an oxide film.

7. The plasma processing apparatus according to claim 5 or 6.

8. The plasma-resistant layer is a silicon-containing film.

8. The plasma processing apparatus according to claim 5, wherein the plasma processing apparatus is a plasma processing apparatus.

9. The plasma-resistant layer is a film of a compound containing one or more elements selected from the group consisting of Group III elements and Lanthanoid elements.

9. The plasma processing apparatus according to claim 5, wherein the plasma processing apparatus is a plasma processing apparatus.

10. The plasma-resistant layer is a film formed by thermal spraying, CVD (Chemical Vapor Deposition), or PVD (Physical Vapor Deposition).

10. The plasma processing apparatus according to claim 5, wherein the plasma processing apparatus is a plasma processing apparatus.

11. The plasma-resistant layer is an anodized film.

7. The plasma processing apparatus according to claim 5 or 6.

12. The multilayer structure includes, in order from a surface side exposed to plasma, the plasma-resistant layer, a layer made of a material having a higher magnetic permeability than aluminum, a layer made of an aluminum-containing material, and an anodized coating. The plasma processing apparatus according to any one of claims 5 to 11.

13. The multilayer structure includes, in order from a surface side exposed to plasma, the plasma-resistant layer, a layer made of a first aluminum-containing material, a layer made of a material having a higher magnetic permeability than aluminum, a layer made of a second aluminum-containing material, and an anodized coating. The plasma processing apparatus according to any one of claims 5 to 11.

14. The material having a higher magnetic permeability than aluminum is permalloy. The plasma processing apparatus according to any one of claims 1 to 13.

15. The material having a higher magnetic permeability than aluminum is magnetic steel. The plasma processing apparatus according to any one of claims 1 to 13.

16. The plasma processing chamber further includes a cover made of a material having a magnetic permeability higher than that of aluminum. The plasma processing apparatus according to any one of claims 1 to 15.

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