Semiconductor device, its manufacturing method, and semiconductor package

Abstract

A semiconductor device (1) according to the present disclosure prevents defects caused by an external force or a stress applied to the semiconductor device (1) or a semiconductor package (4) by having a configuration which is provided with: a semiconductor element (9); a plurality of conductive members (5) that extend upward, while being electrically connected to the semiconductor element (9); a sealing resin (6) that forms a protrusion part (6a) which seals the semiconductor element (9) and the conductive members (5), while covering the peripheries of front end parts (5a) of the plurality of conductive members (5); a control substrate (7) that is provided with a through hole (7a) into which the protrusion part (6a) is inserted, while having a control electrode (7b); and a flexible wiring line (8) which connects the control electrode (7b) and the front end parts (5a) of the conductive members (5) to each other, while exhibiting flexibility. Consequently, the present invention enables the semiconductor device (1) or the semiconductor package (4) to have excellent durability.

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device using a semiconductor package having a semiconductor element, a manufacturing method thereof, and a semiconductor package. [Background technology]

[0002] Semiconductor devices used in power conversion devices for in-vehicle devices, industrial devices, etc., or semiconductor packages constituting a part of the semiconductor devices, are required to have high durability because they are subjected to external forces or stresses due to heat, vibration, impact, etc., and high voltages are applied. Conventionally, semiconductor devices having high-strength joints have been disclosed in which a semiconductor element and a part of a conductive member are sealed with a sealing resin, a semiconductor package with an exposed tip of the conductive member is attached to an opposing control board, and the tip of the conductive member is connected to an electrode of the control board by solder (for example, Patent Document 1). Also disclosed is a semiconductor device in which the conductive member exposed between the semiconductor package and the control board is covered with an underfill material to improve insulation (for example, Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-21371 A (Fig. 2) [Patent Document 2] WO2014 / 103133 (Fig. 1) Summary of the Invention [Problem to be solved by the invention]

[0004] However, during the manufacture, use, etc. of a semiconductor device or semiconductor package, an external force or stress may be applied to the solder, which is a joining material used to connect the conductive member of the semiconductor package to the electrode of the control board, or to the underfill material used to cover the conductive member of the semiconductor package, causing damage such as peeling or cracking in the joining material or insulating resin, which may cause problems with the electrical connection or insulation of the semiconductor device. Therefore, it was an issue to obtain a semiconductor device or semiconductor package that is excellent in durability and prevents problems caused by external force or stress.

[0005] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a semiconductor device or semiconductor package that is excellent in durability. [Means for solving the problem]

[0006] The semiconductor device disclosed herein comprises a semiconductor element, a plurality of conductive members electrically connected to the semiconductor element and extending upward, a sealing resin that seals the semiconductor element and the conductive members and forms a protrusion that covers the periphery of the tip ends of the plurality of conductive members, a control board having a control electrode and a through hole into which the protrusion is inserted, and flexible wiring that connects the control electrode and the tip ends of the conductive members and is flexible.

[0007] In addition, the manufacturing method of the semiconductor device disclosed herein includes a semiconductor package fixing process for fixing a semiconductor package having a sealing resin that forms a protrusion covering the periphery of the tip portions of a plurality of conductive members to a base plate, a protrusion insertion process for inserting the protrusion into a through hole provided in a control board, and a flexible wiring connection process for connecting the tip portions and a control electrode provided on the control board with flexible wiring by wire bonding.

[0008] Furthermore, the semiconductor package of the present disclosure includes a semiconductor element, a plurality of conductive members electrically connected to the semiconductor element and extending upward, and a sealing resin that seals the semiconductor element and the conductive members and forms a protrusion that covers the periphery of the tips of the plurality of conductive members. Effect of the Invention

[0009] According to the present disclosure, it is possible to prevent defects caused by external forces or stresses occurring in a semiconductor device or semiconductor package, and obtain a semiconductor device or semiconductor package with excellent durability. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic diagram showing a schematic configuration of a semiconductor device in a first embodiment. [Diagram 2] 1 is a schematic diagram showing a schematic configuration of a semiconductor package in a first embodiment. [Diagram 3] 1 is a cross-sectional view showing a schematic configuration of a semiconductor package according to a first embodiment. [Figure 4] 4 is an explanatory diagram showing a corresponding relationship between a semiconductor package and a control board in the first embodiment. FIG. [Diagram 5] 2A to 2C are explanatory diagrams showing a manufacturing method of the semiconductor package in the first embodiment. [Figure 6] 4 is a cross-sectional view showing a connection state of a flexible wiring of the semiconductor device in the first embodiment. FIG. [Figure 7] 1 is a schematic cross-sectional view showing a schematic configuration of a modified example of the semiconductor device in the first embodiment. [Figure 8] 1 is a schematic diagram showing a schematic configuration of a modified example of the semiconductor device in the first embodiment. FIG. [Figure 9] 11 is a schematic cross-sectional view showing the relationship between a protrusion of a semiconductor package and a control board in the second embodiment. FIG. [Figure 10] 1 is a schematic diagram showing a schematic configuration of a modified example of the semiconductor package according to the first and second embodiments. FIG. [Figure 11] 1 is a schematic cross-sectional view showing a schematic configuration of a modified example of the semiconductor package in the first and second embodiments. [Figure 12] 1 is a schematic diagram showing a schematic configuration of a modified example of the semiconductor package according to the first and second embodiments. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] As a result of intensive research, the inventors have found that by forming a protrusion that covers the periphery of the tip portions of a plurality of conductive members of a semiconductor package and forming a sealing structure for the semiconductor package that does not expose the periphery of the tip portions of the conductive members, it is possible to improve the insulation of the conductive members between the semiconductor package and the control board without using an underfill material, and to prevent defects such as peeling and cracking of the underfill material. In addition, it has been found that by configuring the conductive members of the semiconductor package and the control electrodes of the control board to be connected by flexible wiring having flexibility, it is possible to suppress damage due to fatigue at the joints of the connection points and improve the stability of the electrical connection. It has also been found that a semiconductor device or semiconductor package with excellent durability can be obtained.

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device, a method for manufacturing a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor package according to embodiments of the present disclosure will be described in detail below with reference to the drawings.

[0013] Embodiment 1 1 is a schematic diagram showing a schematic configuration of a semiconductor device 1 according to the present embodiment. The semiconductor device 1 has a configuration in which a semiconductor package 4 is fixed onto a base plate 2 via an insulating member 3, and a tip portion 5a of a conductive member 5 of the semiconductor package 4 is connected to a control electrode 7b of a control board 7 by a flexible wiring 8. Details of the semiconductor package 4 and the control board 7 will be described later, but here, a protrusion 6a formed on the semiconductor package 4 is inserted into a through hole 7a of the control board 7.

[0014] The base plate 2 is a substrate to which the semiconductor package 4 is fixed, and dissipates heat generated in the semiconductor package 4 to the outside. The base plate 2 may be made of sheet metal containing copper as a main component. The insulating member 3 electrically insulates the base plate 2 from the semiconductor package 4, and transfers heat generated by the semiconductor package 4 to the base plate 2. The insulating member 3 may be made of insulating epoxy resin mixed with silica as a filler.

[0015] The flexible wiring 8 is a conductive wiring having flexibility, and is connected at a first connection point 8a, which is a connection point between the flexible wiring 8 and the tip portion 5a of the conductive member 5, and a second connection point 8b, which is a connection point between the flexible wiring 8 and the control electrode 7b of the control board 7. The flexible wiring 8 is bent between the first connection point 8a and the second connection point 8b. When an external force or stress is applied to the semiconductor package 4 or the control board 7, the bent portion of the flexible wiring 8 is displaced, and it is possible to suppress the load from being applied to the first connection point 8a and the second connection point 8b. For the flexible wiring 8, materials such as aluminum, copper, silver, gold, or alloys containing these additives can be used, and it is preferable to use a material that is unlikely to undergo chemical changes such as oxidation and corrosion. Here, if a material having elasticity or not having brittleness is selected for the flexible wiring 8, the flexible wiring 8 can be elastically deformed in response to an external force or stress, and the flexible wiring 8 can be unlikely to suffer fatigue or damage. For the flexible wiring 8, a conductive wire or ribbon having a diameter or width of about 0.1 mm or more and 2 mm or less can be used.

[0016] Fig. 2 is a schematic diagram showing a schematic configuration of a semiconductor package 4 constituting the semiconductor device 1 of this embodiment. As shown in Fig. 2, the semiconductor package 4 has a plurality of protrusions 6a formed by covering the peripheries of the tip ends 5a of a plurality of conductive members 5 with a sealing resin 6.

[0017] The protrusion 6a may have a shape and size that allows it to be inserted into the through hole 7a of the control board 7. The diameter of the protrusion 6a may be about 0.5 mm to 10 mm, and the height may be about 0.1 mm to 5 mm. For example, when the shape of the protrusion 6a is a rectangular parallelepiped, the width or depth may be about 0.1 mm to 10 mm, and the height may be about 0.1 mm to 5 mm. The sealing resin 6 covers the outer periphery of the semiconductor package 4 except for the upper part of the tip 5a of the conductive member 5 and the bottom surface of the semiconductor package 4, and the upper end of the tip 5a that connects to the flexible wiring 8 is exposed. A flat support surface 6b is provided on the upper surface of the sealing resin 6 except for the protrusion 6a, and the support surface 6b can support the control board 7. Here, the multiple exposed parts of the tip 5a of the conductive member 5 shown in FIG. 2 are electrodes used for supplying a power supply voltage or a control voltage, detecting an operating current or an operating temperature, and the like.

[0018] Fig. 3 is a schematic cross-sectional view of the semiconductor package 4 taken along the plane AA in Fig. 2. Electrodes (not shown) on the lower surfaces of the two semiconductor elements 9 are connected to the conductive member 5 via a lower bonding layer 10 and relay electrodes 11, and electrodes (not shown) on the upper surfaces of the two semiconductor elements 9 are connected to the conductive member 5 via an upper bonding layer 12.

[0019] As shown in Fig. 3, the conductive members 5 include those connected to relay electrodes 11 and those connected to electrodes of semiconductor element 9 via upper surface bonding layer 12, which extend toward the upper side of semiconductor package 4 and have tip portions 5a above support surface 6b of semiconductor package 4. The width of the exposed portion at the upper end of tip portion 5a shown in Fig. 3 may be sufficient to allow connection of flexible wiring 8, and is approximately 0.1 mm or more and 5 mm or less. The conductive members 5 may be made of conductive materials such as copper alloys and iron alloys.

[0020] The sealing resin 6 has insulating properties, and seals the semiconductor element 9, the relay electrode 11, and the conductive member 5, while covering the periphery of the tip 5a of the conductive member 5 and forming a protruding portion 6a above the support surface 6b. By forming the protruding portion 6a, the side portion of the tip 5a of the conductive member 5 is insulated, and the distance between the exposed portions along the surface of the sealing resin 6 can be increased, thereby suppressing discharge between the electrodes of the semiconductor element 9 and improving the insulation of the semiconductor package 4 and the semiconductor device 1. The sealing resin 6 can be made of a material that uses an epoxy resin as a main component and mixes silica powder as a filler.

[0021] The semiconductor element 9 may be an element such as an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), or a FWD (Free Wheeling Diode), and may be one or more types of elements combined in one semiconductor package. The semiconductor element 9 may be made of a semiconductor material such as silicon, silicon carbide, or gallium nitride. The semiconductor element 9 in FIG. 3 is an example in which electrodes are arranged on the upper and lower surfaces, and the electrode not shown on the lower surface side is, for example, a drain electrode, and the electrode not shown on the upper surface side is, for example, a source electrode. The semiconductor element 9 may also be provided with electrodes used for supplying a power supply voltage or a control voltage, detecting an operating current or an operating temperature, or the like.

[0022] The lower bonding layer 10 connects the electrode on the lower surface of the semiconductor element 9 to the electrode pattern arranged on the relay electrode 11, and electrically connects the semiconductor element 9 to the conductive member 5. The upper bonding layer 12 electrically connects the electrode on the upper surface of the semiconductor element 9 to the conductive member 5. The lower bonding layer 10 and the upper bonding layer 12 may be made of a low melting point metal material such as solder or a hardened product of silver paste containing conductive particles. The relay electrode 11 may be made of a plate-shaped or block-shaped material having electrical conductivity and thermal conductivity such as copper or aluminum. The semiconductor element 9 may be connected to the conductive member 5 via the lower bonding layer 10, and the conductive member 5 may be bent so as to extend upward, so that the conductive member 5 serves as the relay electrode 11.

[0023] 4 is an explanatory diagram showing the corresponding relationship between the semiconductor package 4 and the control board 7 in this embodiment. The control board 7 is formed with a through hole 7a into which the protrusion 6a of the semiconductor package 4 is inserted, and a control electrode 7b to which a flexible wiring 8 is connected.

[0024] The control board 7 controls the power supply voltage or control voltage of the semiconductor element 9. The control board 7 may be provided with electrodes used for detecting the operating current, operating temperature, etc. of the semiconductor element 9. The control board 7 may be a so-called printed circuit board in which copper wiring is formed on a glass epoxy board made of glass fiber impregnated with epoxy resin, and has a thickness of about 0.1 mm to 3 mm.

[0025] The through hole 7a may have a shape and size that allows the protrusion 6a to be inserted. The opening diameter of the through hole 7a may be about 0.5 mm to 10 mm, and the depth of the hole may be the thickness of the control board 7. For example, when the opening shape is rectangular in a plan view, the width or depth may be about 0.5 mm to 10 mm. The through hole 7a may be formed by an NC processing machine, a laser processing machine, or the like. The width and depth of the through hole 7a are larger than the width and depth of the protrusion 6a of the semiconductor package 4, respectively, and may be appropriately adjusted according to the size of the gap generated on the left and right sides of the protrusion 6a by inserting the protrusion 6a into the through hole 7a. When the size of the left and right gaps is made equal, the size of the gap on one side is preferably 0.1 mm to 5 mm. By making the gap smaller, the wiring length of the flexible wiring 8 can be shortened, reducing the amount of material used for the flexible wiring 8, and when an external force or stress is applied to the semiconductor device 1, the protrusion 6a and the through hole 7a are more likely to come into contact with each other, making it difficult for the flexible wiring 8 to be stretched and preventing overload on the flexible wiring 8. By making the gap larger, the protrusion 6a can be more easily inserted into the through hole 7a, improving assembly accuracy and preventing defects due to insufficient insertion and the like.

[0026] The control electrode 7b is an electrode connected to the copper wiring formed on the control board 7 and used for supplying the power supply voltage or control voltage of the semiconductor element 9, detecting the operating current or operating temperature, etc. The control electrode 7b can be made of copper, or a metal material plated with nickel, gold, etc., and it is preferable to select a material that can obtain a desired bonding strength in connection with the flexible wiring 8. The distance from the control electrode 7b to the opening end of the through hole 7a is preferably 0.5 mm or more and 10 mm or less. If the distance is shortened, the wiring length of the flexible wiring 8 can be shortened to reduce the amount of material used for the flexible wiring 8, and if the distance is lengthened, deformation, loss, and damage of the control electrode 7b that may occur when the opening is formed can be suppressed.

[0027] Next, a manufacturing method of the semiconductor device 1 in this embodiment will be described. The manufacturing method of the semiconductor device 1 includes a semiconductor package fixing step of fixing the semiconductor package 4 to the base plate 2, a protrusion inserting step of inserting the protrusion 6a of the semiconductor package 4 into the through hole 7a of the control board 7, and a flexible wiring connecting step of connecting the tip 5a of the conductive member 5 of the semiconductor package 4 and the control electrode 7b of the control board 7 with a flexible wiring 8.

[0028] In the semiconductor package fixing process, a liquid or sheet-like insulating material 3 having adhesive and thermosetting properties is applied or attached to the base plate 2, and the semiconductor package 4 is placed in the desired position on top of it and heated to harden the insulating material 3, thereby fixing the semiconductor package 4 to the base plate 2 as shown in Figure 1.

[0029] 4, in the protrusion insertion step, the position of the through hole 7a of the control board 7 is adjusted so as to correspond to the position of the protrusion 6a of the semiconductor package 4, and the protrusion 6a is inserted into the through hole 7a. A resin material having adhesiveness and thermosetting properties, such as epoxy resin, polyurethane resin, silicone resin, etc., may be applied to the flat upper surface of the semiconductor package 4 other than the protrusion 6a, and the control board 7 may be fixed to the semiconductor package 4 by laminating and heating to harden the resin material. Here, the fixing method may be a mechanical fixing method other than adhesion using a resin material, and may be fixed using a mechanism such as a screw or a hook.

[0030] In the flexible wiring connection process, ultrasonic bonding by a wire bonder is used to connect the tip 5a of the conductive member 5 and the control electrode 7b of the control board 7 with the flexible wiring 8. When a ribbon-shaped wire is used for the flexible wiring 8, a dedicated processing tool may be used for the wire bonder. Here, as a connection method, in addition to wire bonding by a wire bonder, a method of connecting by soldering metal wiring in which all parts except the tip are insulated can also be used.

[0031] Here, a description will be given of a method for manufacturing the semiconductor package 4. The semiconductor package 4 includes a semiconductor element bonding step of bonding the semiconductor element 9 to the relay electrode 11, a conductive member bonding step of bonding the conductive member 5 to the semiconductor element 9 and the relay electrode 11, and a sealing step of covering the conductive member 5, the periphery of the tip portion 5a of the conductive member 5, and the semiconductor element 9 with a sealing resin 6.

[0032] In the semiconductor element bonding process, the lower electrode of the semiconductor element 9 is bonded to the relay electrode 11 by soldering or by applying and sintering a conductive paste, and the semiconductor element 9 is fixed to the relay electrode 11 as shown in Fig. 2. The bonding portion of the relay electrode 11 may be subjected to surface treatment such as nickel plating or plasma irradiation to improve the bonding strength between the semiconductor element 9 and the relay electrode 11.

[0033] In the conductive member bonding step, the conductive member 5 is bonded to the semiconductor element 9 and the relay electrodes 11 by soldering, and the folded conductive member 5 is fixed so as to extend upward above the semiconductor package 4, as shown in FIG.

[0034] In the sealing process, the semiconductor element 9 and the relay electrode 11 to which the conductive member 5 is bonded are placed in a mold, and a molten sealing resin material is poured into the mold and heated as a whole to harden the sealing resin material and integrally mold the sealing resin 6. In this case, the conductive member 5 and the semiconductor element 9 are sealed by a so-called transfer molding. Here, by providing a rectangular parallelepiped space in the portion of the mold corresponding to the protrusion 6a of the sealing resin 6, the rectangular parallelepiped protrusion 6a can be formed by transfer molding. Here, if this space is not formed and resin sealing is performed by transfer molding, the protrusion 6a is not formed as shown in FIG. 5, but the protrusion 6a can be formed by cutting the portion other than the portion where the protrusion 6a is to be formed by an end mill along the cutting direction d1 shown in FIG. 5 and the cutting direction d2 perpendicular thereto. In this way, the position of the protrusion 6a can be changed without remaking the mold used for transfer molding, and the design and manufacturing costs can be reduced. Moreover, other than transfer molding, it is also possible to coat the resin by compression molding, potting or the like, and after the resin is hardened, to form the protruding portion 6a by cutting, grinding or the like.

[0035] Through the above steps, the semiconductor device 1 according to the present embodiment and the semiconductor package 4 used for the semiconductor device 1 can be manufactured.

[0036] In this way, the semiconductor device 1 includes a semiconductor element 9, a plurality of conductive members 5 electrically connected to the semiconductor element 9 and extending upward, a sealing resin 6 that seals the semiconductor element 9 and the conductive members 5 and forms a protruding portion 6a that covers the periphery of the tip portions 5a of the plurality of conductive members 5, a control board 7 having a control electrode 7b formed with a through hole 7a into which the protruding portion 6a is inserted, and a flexible wiring 8 that connects the control electrode 7b and the tip portion 5a of the conductive member 5 and has flexibility. The sealing resin 6 with the protruding portion 6a insulates the periphery of the tip portion 5a of the conductive member 5 of the semiconductor package 4, and there is no need to provide an insulating resin such as an underfill material between the semiconductor package 4 and the control board 7. Therefore, even if an external force or stress is applied to the semiconductor device 1, defects such as peeling or cracking of the insulating resin do not occur. Therefore, defects caused by external forces or stresses applied to the semiconductor device 1 can be prevented, and a semiconductor device 1 with excellent durability can be obtained. In addition, the semiconductor package 4 with the protruding portion 6a can be used to manufacture such a semiconductor device 1.

[0037] In the present embodiment, an example of the sealing resin 6 that forms the protruding portion 6a that completely covers the periphery of the tip portions 5a of the plurality of conductive members 5 has been shown, but the sealing resin 6 may be configured to form the protruding portion 6a in which the portion of the periphery of the tip portions 5a that is equal to or lower than the height of the upper surface of the control board 7 is covered with the sealing resin 6, in other words, the portion above the height of the upper surface of the control board 7 is not covered with the sealing resin 6. Also, as shown in FIG. 3, an example in which the upper end of the tip portion 5a of the conductive member 5 is entirely exposed has been shown, but the exposed portion of the upper end of the tip portion 5a may be exposed to an extent that the flexible wiring 8 can be connected, and a configuration in which a part of the upper end of the tip portion 5a is covered with the sealing resin 6 may be used. For example, the width of the exposed portion of the upper end of the tip portion 5a may be about half the width of the tip portion 5a. These configurations regarding the exposure of the tip portions 5a in the vertical and horizontal directions also ensure the insulation of the semiconductor device 1, and in the manufacture of the semiconductor package 4, the sealing accuracy of the sealing resin 6 is relaxed, or the flexible wiring 8 is easily connected.

[0038] 6, the protrusion height H1, which is the length from the lower end of the protrusion 6a to the upper end of the protrusion 6a, in other words, from the surface of the semiconductor package 4 on which the protrusion 6a is formed to the upper end of the protrusion 6a, is equal to or greater than the thickness H2 of the control board 7, and it is preferable that the upper end of the protrusion 6a is above the upper surface of the control board 7. In FIG. 6, the upper end of the protrusion 6a is above the upper surface of the control board 7 by the difference between the height H1 of the protrusion 6a and the thickness H2 of the control board 7. This configuration makes it easy to insert the protrusion 6a into the through hole 7a, and can suppress problems such as insufficient insertion that cause problems in fixing the semiconductor package 4 and the control board 7 and problems in connecting the flexible wiring 8. In addition, the support surface 6b of the semiconductor package 4 and the lower surface of the control board 7 may be in contact with each other or may be spaced apart from each other.

[0039] 6, in relation to the connection point distance D1, which is the length between the first connection point 8a, which is the connection point between the flexible wiring 8 and the tip portion 5a, and the second connection point 8b, which is the connection point between the flexible wiring 8 and the control electrode 7b, the length of the flexible wiring 8 from the first connection point 8a to the second connection point 8b, and the allowable width D2, which is the width between the side of the protrusion 6a and the opening end of the through hole 7a of the control board 7, it is preferable that the length of the flexible wiring 8 is longer than the sum of the connection point distance D1 and the allowable width D2. With this configuration, even if an external force or stress is generated and the protrusion 6a and the control board 7 move laterally, causing the side of the protrusion 6a to collide with the opening end of the through hole 7a, the bent portion of the flexible wiring 8 does not fully stretch, and it is possible to suppress the application of a load to the first connection point 8a and the second connection point 8b of the flexible wiring 8.

[0040] 2, the shape of the protrusion 6a may be a polygonal prism, a cylinder, or the like, and the shape of the through hole 7a of the control board 7 may be selected according to the shape of the protrusion 6a. Furthermore, although the example in which the support surface 6b of the semiconductor package 4 is flat has been shown, it does not have to be completely flat, and may have irregularities or a spherical surface such as a dome shape.

[0041] 7, the semiconductor package 4 may have a second protruding portion 6c made of the sealing resin 6 that does not include the tip portion 5a of the conductive member 5 on the support surface 6b. The control board 7 is provided with a second through hole 7c corresponding to the second protruding portion 6c, and the second protruding portion 6c is inserted into the second through hole 7c, so that the semiconductor package 4 and the control board 7 are fixed more stably. Therefore, even if an external force or stress is generated in the semiconductor device 1 or the semiconductor package 4 and the protruding portion 6a and the control board 7 move laterally, the movement is restricted, and the bent portion of the flexible wiring 8 is not fully stretched, so that the first connection point 8a and the second connection point 8b of the flexible wiring 8 are further prevented from being subjected to a load. The shape of the second protruding portion 6c may be a rectangular parallelepiped, a polygonal prism, a cylinder, or the like. The diameter of the second protruding portion 6c may be about 0.5 mm or more and 10 mm or less, and the height may be about 0.1 mm or more and 5 mm or less. For example, when the second protruding portion 6c has a rectangular parallelepiped shape, the width or depth can be approximately 0.5 mm or more and 10 mm or less, and the height can be approximately 0.1 mm or more and 5 mm or less.

[0042] Furthermore, the second through hole 7c may have any shape and size that allows the second protruding portion 6c to be inserted therein, and the opening diameter may be about 0.5 mm to 10 mm, and the depth of the hole may be the thickness of the control board 7. For example, when the opening shape of the second through hole 7c is rectangular in a plan view, the width or depth of the opening diameter may be about 0.5 mm to 10 mm. The second through hole 7c may be formed by an NC processing machine, a laser processing machine, or the like. The width and depth of the second through hole 7c are larger than the width and depth of the second protruding portion 6c, respectively, and may be appropriately adjusted according to the size of the gaps generated on the left and right sides of the second protruding portion 6c by inserting the second protruding portion 6c into the second through hole 7c. When the sizes of the left and right gaps are made equal, the size of the gap on one side is preferably 0.1 mm to 5 mm. If the gap is made smaller, the second protrusion 6c and the second through hole 7c are more likely to come into contact with each other when an external force or stress is applied to the semiconductor device 1, making it difficult for the flexible wiring 8 to be extended and preventing overload on the flexible wiring 8. If the gap is made larger, the second protrusion 6c is more easily inserted into the second through hole 7c, improving assembly accuracy and preventing defects due to insufficient insertion and the like.

[0043] Furthermore, as shown in FIG. 7, a second protrusion height H3, which is a length from a lower end of the second protrusion 6c to an upper end of the second protrusion 6c, in other words, from a surface of the semiconductor package 4 on which the second protrusion 6c is formed to the upper end of the second protrusion 6c, is equal to or greater than a thickness H2 of the control board 7, second protrusion 6c It is preferable that the upper end of the second protrusion is located above the upper surface of the control board 7. In FIG. 7, the difference between the second protrusion height H3 and the thickness H2 of the control board 7 is second protrusion 6c The upper end of the control board 7 is located above the upper surface of the control board 7. second protrusion 6c This makes it easier to insert the flexible wiring 8 into the through hole 7a, and thus makes it possible to prevent problems such as insufficient insertion causing problems in fastening the semiconductor package 4 to the control board 7 and in connecting the flexible wiring 8.

[0044] Furthermore, when the size of the gap on the left and right of the second protrusion 6c, which is generated by inserting the second protrusion 6c into the through hole 7a, is made equal to the size of the gap on one side, preferably between 0.5 mm and 5 mm. If the gap on one side is made small, even if an external force or stress is applied to the semiconductor device 1 or the semiconductor package 4 and the protrusion 6a and the control board 7 move laterally, the second protrusion 6c comes into contact with the through hole 7a, causing the protrusion 6a and the control board 7 to move laterally, preventing the bent portion of the flexible wiring 8 from being fully stretched, and further preventing the first connection point 8a and the second connection point 8b of the flexible wiring 8 from being subjected to a load. If the gap is made large, second protrusion 6c This makes it easier to insert the through hole 7a, improves assembly accuracy, and prevents problems due to insufficient insertion, etc.

[0045] 8, a semiconductor device 1a may be formed in which a joint protection member 13 is formed on the control board 7 of the semiconductor device 1 in FIG. 1 to cover the tip portion 5a of the conductive member 5, the control electrode 7b of the control board 7, and the flexible wiring 8. The joint protection member 13 has elasticity and protects the tip portion 5a, the control electrode 7b, or the flexible wiring 8 from external forces or stresses occurring in the semiconductor device 1a. If a relatively soft resin having an elastic modulus of 1 MPa or more and less than 1000 MPa is used for the joint protection member 13, the joint protection member 13 can easily follow the displacement and deformation of the flexible wiring 8 due to external forces or stresses occurring in the semiconductor device 1a, and it is possible to suppress the application of a load to the first connection point 8a and the second connection point 8b of the flexible wiring 8. In addition, by using a resin having a modulus of elasticity of 1 GPa or more and 10 GPa or less, which is relatively difficult to cause elastic deformation, the fixing between the semiconductor package 4 and the control board 7 can be strengthened, the flexible wiring 8 can be fixed, the displacement and deformation of the flexible wiring 8 due to an external force generated in the semiconductor device 1a can be suppressed, and the first connection point 8a and the second connection point 8b of the flexible wiring 8 can be suppressed from being subjected to a load. Furthermore, the joint protection member 13 has insulating properties, and by covering the tip portion 5a, the control electrode 7b, and the flexible wiring 8, the insulation between them is improved. The joint protection member 13 can be made of a thermosetting resin such as silicone, fluorine, polyurethane, polyolefin, polyimide, ultraviolet curing resin, or the like. In addition, the elastic modulus of the joint protection member 13 may be adjusted by dispersing a filler in the joint protection member 13. Here, the joint protection member 13 is preferably thixotropic before curing in order to form the joint protection member 13 in a desired shape at a desired position on the control board 7.

[0046] In the joint protection forming process for forming the joint protection member 13, a dispenser, a slit coater, or the like is used to apply and harden a raw material for the joint protection member so as to cover the tip portion 5a of the conductive member 5, the control electrode 7b of the control board 7, and the flexible wiring 8, or to cover the entire upper surface of the control board 7. If a thermosetting resin is selected as the material for the joint protection member 13, it is hardened by heating, and if an ultraviolet-curing resin is selected, it is hardened by irradiating it with ultraviolet light of a wavelength suitable for the resin.

[0047] Also, while an example has been shown in which a plurality of semiconductor packages 4, semiconductor elements 9, and conductive members 5 are provided, the quantities of these may be changed as appropriate. For example, there may be four semiconductor elements 9 and eight conductive members 5. Here, the semiconductor package 4 may be provided with a plurality of electrodes used for supplying a power supply voltage or a control voltage to the semiconductor elements 9, detecting an operating current or an operating temperature of the semiconductor elements 9, etc., and the quantity of the conductive members 5 may be increased accordingly.

[0048] In addition, although an example has been shown in which the electrodes (not shown) of the semiconductor element 9 are disposed on the upper and lower surfaces of the semiconductor element 9, a plurality of electrodes may be disposed only on the upper surface of the semiconductor element 9. In this case, a plurality of conductive members 5 are connected to a plurality of electrodes on the upper surface of the semiconductor element 9 via the upper surface bonding layer 12.

[0049] Even with this configuration, the periphery of the tip 5a of the conductive member 5 of the semiconductor package 4 is insulated, and there is no need to provide an insulating resin such as an underfill material between the semiconductor package 4 and the control board 7. Therefore, even if an external force or stress is applied to the semiconductor device 1, defects such as peeling or cracking of the insulating resin do not occur. Furthermore, even if an external force or stress is applied to the semiconductor device 1, the joint protective member 13 follows the flexible wiring 8 or the joint protective member 13 fixes the flexible wiring 8, thereby preventing a load from being applied to the first connection point 8a and the second connection point 8b of the flexible wiring 8. Therefore, defects caused by external forces or stresses applied to the semiconductor device 1 can be prevented, and a semiconductor device 1 or a semiconductor package 4 with excellent durability can be obtained.

[0050] Embodiment 2 In the first embodiment, an example in which the shape of the protruding portion 6a of the semiconductor package 4 is a rectangular parallelepiped is shown, but in the present embodiment, an example in which the protruding portion 6a is in a stepped shape is described. Other configurations are the same as those in the first embodiment.

[0051] 9 is a schematic cross-sectional view showing the relationship between the protruding portion 6a of the semiconductor package 4 and the control board 7 in this embodiment. The protruding portion 6a has a stepped shape composed of a lower stage having a supporting portion 6d and an upper stage having an inserting portion 6e above the lower stage. The supporting portion 6d supports the lower surface of the control board 7, and the inserting portion 6e is inserted into the through-hole 7a of the control board 7. Here, the upper surface of the supporting portion 6d supports the control board 7.

[0052] The diameter of the support portion 6d is larger than the opening diameter of the through hole 7a of the control board 7, and the diameter of the insertion portion 6e is smaller than the opening diameter of the through hole 7a of the control board 7. The diameter of the insertion portion 6e can be about 0.5 mm to 10 mm, and the height can be about 0.1 mm to 5 mm. For example, if the insertion portion is a rectangular parallelepiped, the width or depth can be about 0.5 mm to 10 mm, and the height can be about 0.1 mm to 5 mm. The diameter of the support portion 6d only needs to be larger than the diameter of the insertion portion 6e, and can be set to a degree that allows it to support the lower surface of the control board 7.

[0053] At the upper end of the insertion portion 6e, the tip portion 5a of the conductive member 5 is exposed, and this exposed portion becomes a connection point with the flexible wiring 8. In addition, the insertion portion height H4, which is the length from the upper end of the support portion 6d to the upper end of the insertion portion 6e, is equal to or greater than the thickness H2 of the control board 7, and it is preferable that the upper end of the insertion portion 6e is above the upper surface of the control board 7. In FIG. 9, the upper end of the insertion portion 6e is above the upper surface of the control board 7 by the difference between the insertion portion height H4 and the thickness H2 of the control board 7. With this configuration, when circuit wiring and components are mounted on the back surface of the control board 7, or when there are uneven parts other than the protruding portion 6a of the semiconductor package 4, the semiconductor package 4 and the control board 7 do not come into contact with each other, and the semiconductor package 4 and the control board 7 are arranged in parallel, so that insufficient insertion of the protruding portion 6a is unlikely to occur. In addition, by eliminating such insufficient insertion, the flexible wiring 8 becomes easier to connect.

[0054] Here, the control board 7 is formed by heating epoxy resin molded into a plate shape, and may warp due to heating, moisture absorption, etc. Even if the entire surface of the control board 7 warps in this way, the above-mentioned configuration prevents the semiconductor package 4 and the control board 7 from coming into contact with each other, and the semiconductor package 4 and the control board 7 are arranged in parallel, making it difficult for insufficient insertion of the protrusion 6a to occur. Also, by eliminating such insufficient insertion, it becomes easier to connect the flexible wiring 8.

[0055] Even with this configuration, the sealing resin 6 with the protrusions 6a formed thereon insulates the periphery of the tip portions 5a of the multiple conductive members 5 of the semiconductor package 4, eliminating the need to provide an insulating resin such as an underfill material between the semiconductor package 4 and the control board 7, and therefore defects such as peeling or cracking of the insulating resin do not occur even if an external force or stress is applied to the semiconductor device 1. Therefore, defects caused by external forces or stresses applied to the semiconductor device 1 can be prevented, and a semiconductor device 1 or semiconductor package 4 with excellent durability can be obtained.

[0056] In the first and second embodiments, an example is shown in which a conductive material bent so as to extend upward from the semiconductor package 4 is used for the conductive member 5, but a configuration may be used in which an electrode post 14 is used for the conductive member 5 and a flexible wiring 8 is used for the wiring connected to the electrode of the semiconductor element 9, and the semiconductor package 4a may be configured as shown in Figs. 10 to 12. Here, Fig. 10 is a schematic diagram showing a schematic configuration of the semiconductor package 4a, Fig. 11 is a schematic cross-sectional view of the semiconductor package 4a taken along the BB plane in Fig. 10, and Fig. 12 is a schematic diagram showing a schematic configuration of the semiconductor package 4a. For clarity of explanation, Fig. 10 does not show the sealing resin 6.

[0057] As shown in FIG. 10, a conductive columnar electrode post 14 is used as the conductive member 5, and the electrode post 14 is electrically connected to the semiconductor element 9 and extends upwardly of the semiconductor package 4a. The electrode post 14 is also connected to a conductive layer 17, which is a conductive pattern provided on an insulating layer 16 having insulating properties. The semiconductor element 9 is fixed to the relay electrode 11 via the insulating layer 16. The semiconductor element 9 is provided with a control terminal 15, which is an electrode different from the electrode to which the electrode post 14 is connected. When the semiconductor element 9 is a MOSFET, the control terminal 15 is, for example, a gate electrode terminal. The control terminal 15 and the conductive layer 17 are connected by a flexible wiring 8. For example, wire bonding can be used to form and connect the flexible wiring 8.

[0058] As shown in FIG. 11, the electrode post 14 is sealed with a sealing resin 6, and a protrusion 6a that covers the periphery of the electrode post tip 14a is formed by the sealing resin 6. The upper end of the electrode post tip 14a is not covered by the sealing resin 6 and is exposed to the outside, and a flexible wiring 8 is connected to this exposed portion. The electrode post 14 may be made of a metal material such as copper or nickel, and the periphery of the electrode post 14 other than the upper and lower ends, in other words, the side surface of the electrode post 14, may be covered with an insulating material such as epoxy resin, polyimide resin, silicone resin, etc., by using, for example, electrochemical coating. Then, the sealing resin 6 is formed by, for example, transfer molding, and a semiconductor package 4a having a protrusion 6a as shown in FIG. 12 can be obtained.

[0059] In this way, when the semiconductor package 4a is manufactured using the flexible wiring 8 together with the electrode posts 14, even if the layout of the semiconductor element 9 is changed, there is no need to redesign or manufacture the conductive member 5, and design costs can be reduced.

[0060] Even with this configuration, the sealing resin 6 with the protrusions 6a formed thereon insulates the periphery of the electrode post tip portions 14a of the electrode posts 14 used as the conductive members 5 of the semiconductor package 4a, eliminating the need to provide an insulating resin such as an underfill material between the semiconductor package 4a and the control board 7, and therefore defects such as peeling or cracking of the insulating resin do not occur even if an external force or stress is applied to the semiconductor device 1. Therefore, defects caused by external forces or stresses applied to the semiconductor device 1 can be prevented, and a semiconductor device 1 or semiconductor package 4a with excellent durability can be obtained.

[0061] In addition to the above, the embodiments can be freely combined, any of the components of the embodiments can be modified, or any of the components of the embodiments can be omitted. [Explanation of symbols]

[0062] 1, 1a semiconductor device, 2 base plate, 3 insulating member, 4, 4a semiconductor package, 5 conductive member, 5a tip portion, 6 sealing resin, 6a protruding portion, 6b support surface, 6c second protruding portion, 6d support portion, 6e insertion portion, 7 control board, 7a through hole, 7b control electrode, 7c second through hole, 8 flexible wiring, 8a first connection point, 8b second connection point, 9 semiconductor element, 10 lower bonding layer, 11 relay electrode, 12 upper bonding layer, 13 bonding protection member, 14 electrode post, 14a electrode post tip portion 15 control terminal, 16 insulating layer, 17 conductive layer, d1, d2 cutting direction, D1 distance between connection points, D2 allowable width, H1 protruding portion height, H2 Control board thickness, H3 second protrusion height, H4 insertion part height.

Claims

1. A semiconductor element; a plurality of conductive members electrically connected to the semiconductor element and extending upward; a sealing resin that seals the semiconductor element and the conductive members and forms a protrusion that covers the periphery of the tip ends of the plurality of conductive members; a control substrate having a control electrode and a through hole into which the protrusion is inserted; a flexible wiring that connects the control electrode and the tip of the conductive member and has flexibility; A semiconductor device comprising:

2. 2. The semiconductor device according to claim 1, characterized in that the height of the protrusion, which is the length from the lower end of the protrusion to the upper end of the protrusion, is greater than or equal to the thickness of the control board, and the upper end of the protrusion is above the upper surface of the control board.

3. 2. The semiconductor device according to claim 1, wherein the protrusion comprises a lower stage having a support portion that supports the lower surface of the control board, and an upper stage having an insertion portion that is inserted into the through hole, the height of the insertion portion being greater than or equal to the thickness of the control board, and the upper end of the insertion portion being higher than the upper surface of the control board.

4. 4. The semiconductor device according to claim 1, wherein an upper surface of the sealing resin other than the protruding portion is flat.

5. 5. The semiconductor device according to claim 1, characterized in that in a relationship between a connection point distance, which is the length between a first connection point which is a connection point between the flexible wiring and the tip portion and a second connection point which is a connection point between the flexible wiring and the control electrode, a length of the flexible wiring from the first connection point to the second connection point, and an allowable width, which is the width between a side of the protrusion and an opening end of the through hole, the length of the flexible wiring is longer than the sum of the connection point distance and the allowable width.

6. further covering the tip portion, the control electrode and the flexible wiring; 6. The semiconductor device according to claim 1, further comprising a joint protection member formed on said control substrate for electrically insulating them from each other.

7. 7. The semiconductor device according to claim 1, further comprising a second protrusion made of the sealing resin not including the conductive member on an upper surface of the sealing resin other than the protrusion, and the second protrusion is inserted into a second through hole of the control board provided corresponding to the second protrusion.

8. a semiconductor package fixing process for fixing a semiconductor package having a sealing resin that forms a protrusion that covers peripheries of tip portions of a plurality of conductive members to a base plate; a protrusion insertion step of inserting the protrusion into a through hole provided in a control board; a flexible wiring connection step of connecting the tip portion and a control electrode provided on the control board with a flexible wiring by wire bonding; A method for manufacturing a semiconductor device comprising the steps of:

9. 9. The method for manufacturing a semiconductor device according to claim 8, further comprising a step of forming a joint protection member on the control substrate, the joint protection member covering the tip portion, the control electrode and the flexible wiring and electrically insulating them from each other.

10. A semiconductor element; a plurality of conductive members electrically connected to the semiconductor element and extending upward; a sealing resin that seals the semiconductor element and the conductive members and forms a protrusion that covers one circumference of the tip ends of the plurality of conductive members; A semiconductor package comprising:

11. 11. The semiconductor package according to claim 10, wherein the protrusion is composed of a lower stage having a support portion and an upper stage having an insertion portion on the lower stage, and the diameter of the lower stage is larger than the diameter of the upper stage.

12. 12. The semiconductor package according to claim 10, wherein an upper surface of the sealing resin other than the protruding portion is flat.

13. 13. The semiconductor package according to claim 10, further comprising a second protruding portion made of the sealing resin and not including the conductive member, on an upper surface of the sealing resin other than the protruding portion.

14. A semiconductor package as described in any one of claims 10 to 13, wherein the protrusion does not cover the upper periphery of the tips of the multiple conductive members.

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