Photosensitive resin composition, cured product thereof, and wiring structure including the cured product

Abstract

Provided are: a photosensitive resin composition; a cured product thereof; and a wiring structure, an electronic component, a semiconductor device, and a camera module containing the cured product. The photosensitive resin composition is cured by irradiation with active energy rays rather than by a heat treatment at a high temperature. This photosensitive resin composition suppresses film reduction after a development process. Furthermore, a finely detailed pattern can be accurately formed through photolithography.　One aspect of the present invention pertains a photosensitive resin composition comprising the following components (A) to (C): (A) a modified polyphenylene ether represented by formula (1) and formula (2); (B) a silsesquioxane compound represented by formula (3); and (C) a photopolymerization initiator, and said aspect also pertains to a cured product of the photosensitive resin composition, and a wiring structure, an electronic component, a semiconductor device, and a camera module containing said cured product.

Description

[Technical field]

[0001] One aspect of the present disclosure relates to a photosensitive resin composition, a cured product thereof, and a wiring structure, an electronic component, a semiconductor device, and a camera module each including the cured product. [Background technology]

[0002] Wiring in a wiring structure constituting an electronic component such as an integrated circuit is being significantly miniaturized. The interval between external terminals for connecting a semiconductor chip included in the wiring structure to external wiring is also becoming extremely narrow. It is difficult to narrow the interval between the external terminals below a certain level. For this reason, a rewiring layer such as copper is disposed on the surface of the semiconductor chip, and external terminals such as bumps are disposed on the rewiring layer. This maintains a specific interval between the external terminals. An insulating film made of an insulating material is formed between the surface of the semiconductor chip and the rewiring layer, and between the rewiring layer and a UBM (Under Bump Metallurgy) layer on which the bumps are disposed. As a method for forming an insulating layer for disposing the rewiring layer, a method of performing patterning by photolithography is adopted. A photosensitive resin composition is used as an insulating material for forming the insulating layer of the wiring structure.

[0003] For example, Patent Document 1 discloses a photosensitive resin composition for a photospacer, which comprises a polymerizable compound, a binder, and a photopolymerization initiator. The polymerizable compound has a group having a bridged ring structure and a group having an ethylenically unsaturated bond. Patent Document 2 discloses a coating composition disposed on an optical fiber or an optical planar waveguide. The coating composition comprises a silsesquioxane component, which has one or more reactive functional groups that can be cured using ultraviolet irradiation. Patent Document 3 discloses a multilayer body comprising a redistribution layer containing copper, an insulating layer containing polyimide or polybenzoxazole, and a copper oxide layer. Patent Document 4 discloses a photosensitive resin material. The photosensitive resin material comprises an alkali-soluble resin, a photosensitizer, and a carboximide compound having a molecular structure with a dicarboximide structure to improve adhesion with the redistribution metal. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2009-128487 A [Patent Document 2] Special Publication No. 2017-534693 [Patent Document 3] JP 2017-92152 A [Patent Document 4] JP 2017-111383 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, none of the photosensitive resin compositions disclosed in Patent Documents 1 to 4 are cured by only active energy rays (e.g., ultraviolet rays). In order to cure these photosensitive resin compositions, a heat treatment at a temperature of about 150°C to 300°C is required. However, when a heat treatment is performed after patterning by photolithography, the formed pattern is deformed due to shrinkage caused by heat. Therefore, it becomes difficult to form a desired fine and accurate pattern. For wiring of a rewiring layer that is becoming finer, it is required to make the line and space (hereinafter also referred to as "L / S") 2 μm / 2 μm or less. When making the L / S smaller, the deformation of the pattern caused by the heat treatment becomes a major problem. The material used for the wiring structure is required not only to suppress the deformation of the pattern but also to suppress the film loss in the development process after patterning. In addition, electronic components are required to transmit signals at a higher speed, and the frequency of the transmission signals is also increasing significantly. For this reason, materials used in the wiring structures of electronic components are also required to have excellent electrical properties (low dielectric constant (ε) and low dielectric tangent (tan δ)) in the high frequency range, specifically, in the frequency range of 1 GHz to 10 GHz.

[0006] Therefore, one object of the present disclosure is to provide a photosensitive resin composition, a cured product thereof, and a wiring structure, an electronic component, a semiconductor device, and a camera module each containing the cured product, as described below. This photosensitive resin composition is cured by irradiation with active energy rays, rather than by heat treatment at a high temperature of, for example, 150°C or higher. With this photosensitive resin composition, film loss is suppressed even after the development process. Furthermore, fine patterns can be accurately formed by photolithography. [Means for solving the problem]

[0007] The means for solving the above problems are as follows. The present disclosure includes the following aspects.

[0008] [1] The following components (A) to (C): (A) Formula (1): [ka] [In the formula, R 1 ~R 3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group, X represents a q-valent unsubstituted or substituted aromatic hydrocarbon group; Y is represented by the following formula (2): [ka] [In the formula, R 4 ~R 7 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkenylcarbonyl group. represents an unsubstituted or substituted phenol repeating unit represented by the formula: m represents an integer from 1 to 100; n represents an integer of 1 to 6; and q represents an integer of 1 to 4. A modified polyphenylene ether resin represented by the formula: (B) Formula (3): [ka] A compound represented by the formula: (C) a photopolymerization initiator, A photosensitive resin composition comprising: [2](D) Formula (4): [ka] [In the formula, each R a each independently represents a hydrogen atom or a methyl group; Each R b each independently represents a divalent hydrocarbon group, x and y each independently represent an integer of 1 to 5. The photosensitive resin composition according to [1], further comprising a bifunctional acrylic resin represented by the following formula: [3] The photosensitive resin composition according to [1] or [2], wherein the component (C) is at least one selected from the group consisting of an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, and an alkylphenone-based photopolymerization initiator. [4] The photosensitive resin composition according to any one of [1] to [3], wherein a mass ratio of the component (A) to the total amount of the component (A) and the component (B) is 0.10 to 0.99. [5] The photosensitive resin composition according to any one of [1] to [4], wherein the content of the component (C) is 1.0 to 20.0 mass % relative to 100 mass % of the photosensitive resin composition. [6] The photosensitive resin composition according to any one of [2] to [5], wherein a mass ratio of the component (D) to the total amount of the component (B) and the component (D) is 0.01 to 0.99. [7] The photosensitive resin composition according to any one of [1] to [6], further comprising (E) a crystalline or amorphous thermoplastic resin (excluding a difunctional acrylic resin). [8] The photosensitive resin composition according to [7], wherein the component (E) is at least one selected from the group consisting of liquid crystal polymers, polyethylene, polypropylene, polyacetal, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, polyether ketone, polytetrafluoroethylene, polyvinyl chloride, polystyrene, polymethyl methacrylate, acrylonitrile-butadiene-styrene, polycarbonate, polyethersulfone, polyetherimide, and polyamideimide. [9] The photosensitive resin composition according to any one of [1] to [8], which is for forming a wiring structure including a rewiring layer.

[10] A cured product obtained by curing the photosensitive resin composition according to any one of [1] to [9].

[11] A wiring structure comprising the cured product according to

[10] .

[12] An electronic component comprising the cured product according to

[10] .

[13] A semiconductor device comprising the cured product according to

[10] .

[14] A camera module comprising the cured product according to

[10] . Effect of the Invention

[0009] According to the above-mentioned aspects of the present disclosure, it is possible to provide a photosensitive resin composition, a cured product obtained by curing the composition, and a wiring structure, an electronic component, a semiconductor device, and a camera module each containing the cured product, as described below. The photosensitive resin composition is cured by irradiation with active energy rays, rather than by heat treatment at a high temperature of, for example, 150°C or higher. With this photosensitive resin composition, film loss is suppressed even after development by photolithography. Furthermore, it is possible to accurately form fine patterns. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is an enlarged view showing an example of a three-line pattern with an L / S of 2 μm / 2 μm. [Diagram 2] 1 shows contrast curves indicating the relationship between the exposure dose and the film thickness ratio of each cured product obtained using the photosensitive resin compositions of Examples 6, 7, and 12, and an ideal contrast curve. [Diagram 3] 1 shows contrast curves indicating the relationship between the exposure dose and the film thickness ratio of each cured product obtained using the photosensitive resin composition of Comparative Example 1, and an ideal contrast curve. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, the photosensitive resin composition according to one aspect of the present disclosure, the cured product obtained by curing the photosensitive resin composition, and the wiring structure, electronic component, semiconductor device, and camera module containing the cured product will be described based on the embodiments. However, the embodiments shown below are examples for embodying the technical idea of ​​the present disclosure. The technical idea of ​​the present disclosure is not limited to the photosensitive resin composition shown below, the cured product obtained by curing the photosensitive resin composition, and the wiring structure, electronic component, semiconductor device, and camera module containing the cured product.

[0012] The photosensitive resin composition according to the first embodiment of the present disclosure includes (A) a specific modified polyphenylene ether represented by formulas (1) and (2) (hereinafter, may be referred to as "component (A)"); (B) a compound represented by formula (3) (hereinafter, may be referred to as "component (B)"); and (C) a photopolymerization initiator (hereinafter, may be referred to as "component (C)"). The photosensitive resin composition includes the modified polyphenylene ether of component (A). Therefore, the relative dielectric constant (ε) of the photosensitive resin composition is 3.0 or less, and the dielectric tangent (tan δ) is 0.01 or less. The photosensitive resin composition has such a low dielectric constant and low dielectric tangent. Therefore, by using the photosensitive resin composition, a cured product having good electrical properties when used in a high frequency range can be obtained. The photosensitive resin composition does not require a high-temperature heat treatment, for example, at 150°C or higher, in order to obtain a cured product. Therefore, the cured product obtained by curing the photosensitive resin composition is unlikely to deform due to shrinkage caused by heat treatment at high temperatures of 150°C or more. The photosensitive resin composition contains a compound of component (B). Therefore, when the photosensitive resin composition is irradiated with active energy rays (e.g., ultraviolet rays), the reaction does not proceed easily at an exposure dose below a certain level. At an exposure dose exceeding a certain level, the reaction proceeds rapidly, the photosensitive resin composition is sufficiently cured, and a cured product in which film loss after development is suppressed is obtained.

[0013] The contrast curve for the photosensitive resin composition is obtained by plotting the film thickness ratio against the exposure dose of active energy rays. The film thickness ratio is the ratio of the film thickness of the cured product after development to the film thickness when the photosensitive resin composition is applied. Since the photosensitive resin composition contains components (A), (B) and (C), the reaction of the photosensitive resin composition does not proceed easily when the exposure dose is below a certain amount, and the reaction proceeds rapidly when the exposure dose exceeds a certain amount. Therefore, the photosensitive resin composition shows a contrast curve close to the ideal contrast curve as shown below. That is, in the contrast curve of the photosensitive resin composition, the film thickness ratio rises sharply, and the film thickness ratio remains constant even if the exposure dose increases. The photosensitive resin composition shows a contrast curve close to the ideal contrast curve by containing components (A), (B) and (C). Therefore, by using this photosensitive resin composition, a fine and accurate pattern with an L / S of 2 μm / 2 μm or less can be formed by photolithography.

[0014] Component (A) Modified polyphenylene ether The photosensitive resin composition comprises (A) a compound represented by the following formula (1): [ka] [In the formula, R 1 ~R 3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group, X represents a q-valent unsubstituted or substituted aromatic hydrocarbon group; Y is represented by the following formula (2): [ka] [In the formula, R 4 ~R 7 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkenylcarbonyl group. represents an unsubstituted or substituted phenol repeating unit represented by the formula: m represents an integer from 1 to 100; n represents an integer of 1 to 6; and q represents an integer of 1 to 4. This PPE resin is sometimes referred to as component (A) or the PPE resin of component (A).

[0015] In general, an x-valent (x is an integer of 1 or more) hydrocarbon group refers to an x-valent group generated by removing x hydrogen atoms from a carbon atom of a hydrocarbon. Accordingly, the above q-valent unsubstituted or substituted aromatic hydrocarbon group refers to a monovalent to tetravalent group generated by removing 1 to 4 hydrogen atoms from a carbon atom of an aromatic hydrocarbon, which may or may not be substituted.

[0016] The term "alkyl group" refers to a monovalent saturated hydrocarbon group. In this embodiment, the alkyl group is preferably a C-C 10 It is an alkyl group, more preferably a C1-C6 alkyl group, further preferably a C1-C4 alkyl group, and particularly preferably a C1-C2 alkyl group. Examples of such an alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, and a hexyl group.

[0017] The term "alkenyl group" refers to a monovalent unsaturated hydrocarbon group having at least one carbon-carbon double bond. In this embodiment, the alkenyl group is preferably a C2-C10 alkenyl group, more preferably a C2-C6 alkenyl group, and even more preferably a C2-C4 alkenyl group. Examples of such alkenyl groups include ethenyl group (vinyl group), 1-propenyl group, 2-propenyl group, 1-butenyl group, 2-butenyl group, isobutenyl group, 1-pentenyl group, and 1-hexenyl group. The group -CR in the above formula (1) 1 =CR 2 R 3 is also an alkenyl group.

[0018] The term "alkynyl group" refers to a monovalent unsaturated hydrocarbon group having at least one carbon-carbon triple bond. In this embodiment, the alkynyl group is preferably a C2-C10 alkynyl group, more preferably a C2-C6 alkynyl group, and even more preferably a C2-C4 alkynyl group. Examples of such alkynyl groups include ethynyl, 1-propynyl, 2-propynyl, butynyl, isobutynyl, pentynyl, and hexynyl groups.

[0019] The term "alkenylcarbonyl group" means a carbonyl group substituted with the above-mentioned alkenyl group, and examples thereof include an acryloyl group and a methacryloyl group.

[0020] In component (A), -(Y) m The portion represented by - corresponds to the main chain of the PPE resin. 4 and R 6 represents a hydrogen atom, and R 5 and R 7 represents a methyl group. -(Y) m One end of the portion represented by - is bonded to the aromatic hydrocarbon group X via an oxygen atom, and the other end is bonded to the alkenyl group -CR via n methylene groups. 1 =CR 2 R 3 Alkenyl group - CR 1 =CR 2 R 3 may be located at any of the ortho, meta, and para positions relative to the methylene group. In one embodiment, n in formula (1) is an integer of 1 to 4. In one embodiment, n in formula (1) is 1 or 2. In another embodiment, R in formula (1) 1 ~R 3 However, all of them are hydrogen atoms.

[0021] The number m of Y in the repeating units of formula (1) is preferably 1-80, more preferably 1-30, and further preferably 1-5.

[0022] In the component (A), the aromatic hydrocarbon group X in the formula (1) is each linked via an oxygen atom to q -(Y) m - is bonded to a moiety represented by the formula: Preferably, q is 2 or 3. More preferably, q is 2. Also, X is preferably a group represented by the formula: [ka] [In the formula, R 11 ~R 18 each independently represents a hydrogen atom or a C1-C6 alkyl group. X is more preferably represented by the following formula: [ka] It has a structure represented by the following formula:

[0023] From the viewpoints of the fluidity during molding of the photosensitive resin composition, the dielectric properties and heat resistance of the cured product obtained by curing the photosensitive resin composition, and the compatibility of other components contained in the photosensitive resin composition, the number average molecular weight of component (A) is preferably 500 or more and 5000 or less. If the number average molecular weight of component (A) is too low, the toughness of the cured product obtained by curing the photosensitive resin composition may decrease. On the other hand, if the number average molecular weight of component (A) is too high, the compatibility of component (A) with other components (for example, a solvent that is added optionally) may decrease. For example, it may be difficult to add a solvent to the photosensitive resin composition to make its viscosity suitable for spin coating. The number average molecular weight of component (A) is more preferably 750 or more and 3000 or less, and even more preferably 1000 or more and 2500 or less. The number average molecular weight of component (A) can be measured, for example, by gel permeation chromatography.

[0024] The content of component (A) in the photosensitive resin composition is preferably 30.0 to 98.0 mass%, more preferably 35.0 to 97.0 mass%, further preferably 40.0 to 96.0 mass%, and particularly preferably 45.0 to 95.0 mass%, based on 100 mass% of the photosensitive resin composition. When the content of component (A) in 100 mass% of the photosensitive resin composition is 30.0 to 98.0 mass%, a cured product having a low dielectric constant and a low dielectric loss tangent, that is, a cured product having good electrical properties suitable for use in the high frequency range, can be obtained.

[0025] As the component (A), a commercially available product can be used. For example, OPE 2St 1200 (manufactured by Mitsubishi Gas Chemical Co., Ltd.) can be used as a commercially available product of the component (A). The component (A) can be prepared by a known method. For example, the component (A) can be prepared by the following method. In this method, X-(OH) q (wherein X and q are as defined above) and a suitable q-hydric phenol (e.g., 2,2',3,3',5,5'-hexamethylbiphenyl-4,4'-diol) having the structure represented by the following formula: [ka] [In the formula, R 4 ~R 7 have the same meaning as above. The method includes oxidative copolymerization of these phenols by known methods to prepare hydroxyl-terminated polyphenylene ether resins. The method further includes modifying the resulting resin by reaction with a suitable modifying agent, such as chloromethylstyrene.

[0026] Component (B) Silsesquioxane compound The photosensitive resin composition comprises (B) a compound represented by the following formula (3): [ka] The compound represented by formula (3) has a specific cage-type silsesquioxane structure and has eight (meth)acryloylalkyl groups, specifically, acryloyloxypropoxy groups. The compound represented by formula (3) of component (B) may be referred to as the silsesquioxane compound of component (B). The molecular weight of the silsesquioxane compound of component (B) is preferably 2000 or less, more preferably 1000 to 2000.

[0027] In the photosensitive resin composition, the mass ratio (A / A+B) of component (A) to the total amount of component (A) and component (B) is preferably 0.10 to 0.99, more preferably 0.20 to 0.98, even more preferably 0.30 to 0.97, even more preferably 0.40 to 0.96, and particularly preferably 0.50 to 0.96. When the mass ratio (A / A+B) of component (A) to the total amount of component (A) and component (B) in the photosensitive resin composition is in the range of 0.10 to 0.99, a cured product in which film loss after development is suppressed by irradiating the photosensitive resin composition with active energy rays (e.g., ultraviolet rays) can be obtained. In addition, by using the photosensitive resin composition, a fine and accurate pattern with an L / S of 2 μm / 2 μm or less can be formed by photolithography.

[0028] When the photosensitive resin composition contains a bifunctional acrylic resin, which is the component (D) described later, the mass ratio (A / A+B+D) of the component (A) to the total amount of the components (A), (B) and (D) is also preferably 0.10 to 0.99, more preferably 0.20 to 0.98, even more preferably 0.30 to 0.97, even more preferably 0.40 to 0.96, and particularly preferably 0.50 to 0.96. When the mass ratio of the component (A) to the total amount of the components (A), (B) and (D) is within the above range, the film formability of the photosensitive resin composition is good. Therefore, a cured product in which film loss after development is suppressed by irradiation with active energy rays can be obtained.

[0029] The content of component (B) in the photosensitive resin composition is preferably 1.0 to 60.0 mass%, more preferably 2.0 to 58.0 mass%, further preferably 3.0 to 55.0 mass%, and particularly preferably 4.0 to 50.0 mass%, based on 100 mass% of the photosensitive resin composition. When the content of component (B) in 100 mass% of the photosensitive resin composition is 1.0 to 60.0 mass%, a high-temperature heat treatment of, for example, 150°C or higher is not required, and a cured product in which film loss after development is suppressed can be obtained by irradiating the photosensitive resin composition with active energy rays (e.g., ultraviolet rays). In addition, by using the photosensitive resin composition, a fine and accurate pattern with an L / S of 2 μm / 2 μm or less can be formed by photolithography.

[0030] As the component (B), a commercially available product can be used. For example, the POSS (Polyhedral Oligomeric silsesquioxane) series manufactured by Hybrid Plastics can be mentioned. Specifically, Acrylo POSS Cage Mixture MA0736 (manufactured by Hybrid Plastics Inc.) can be used.

[0031] Component (C) Photopolymerization initiator The photosensitive resin composition includes a photopolymerization initiator (C). Component (C) may be any compound that generates radicals that react component (A), component (B), and, if necessary, component (D) when irradiated with active energy rays. Here, active energy rays include all light in a broad sense, such as radiation such as α-rays and β-rays, electromagnetic waves such as γ-rays and X-rays, electron beams (EB), and visible light of about 100 to 400 nm, and preferably ultraviolet rays. As component (C), one type of photopolymerization initiator may be used, or two or more types of photopolymerization initiators may be used in combination.

[0032] As component (C), it is preferable to use at least one selected from the group consisting of oxime ester-based polymerization initiators, acylphosphine oxide-based polymerization initiators, and alkylphenone-based polymerization initiators in order to promote the reaction of component (A), component (B), and, if necessary, component (D) by irradiation with active energy rays.

[0033] Examples of oxime ester polymerization initiators include 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-ethanone-, 1-(O-acetyloxime), and 1,2-octadione, 1-[4-(phenylthio)phenyl]-, 2-(o-benzoyloxime).

[0034] Examples of the acylphosphine oxide polymerization initiator include bis(2,4,6-trimethylbenzoyl)-phenyl-phosphine oxide and 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide.

[0035] An example of the alkylphenone polymerization initiator is 2-benzyl-2-(dimethylamino)-4'-morpholinobutyrophenone.

[0036] The content of component (C) in the photosensitive resin composition is preferably 1.0 to 20.0 mass%, more preferably 3.0 to 18.0 mass%, and even more preferably 5.0 to 15.0 mass%, based on 100 mass% of the photosensitive resin composition. When the content of component (C) in 100 mass% of the photosensitive resin composition is 1.0 to 20.0 mass%, a cured product can be obtained by irradiating the photosensitive resin composition with active energy rays (e.g., ultraviolet rays) without the need for high-temperature heat treatment at, for example, 150°C or higher.

[0037] As the component (C), a commercially available product can be used. As the commercially available product of the component (C), for example, Irgacure OXE-01 (manufactured by BASF), Irgacure OXE-02 (manufactured by BASF), Omnirad 819 (formerly Irgacure 819) (manufactured by IGM Resins BV), and Omnird 369 (formerly Irgacure 369) (manufactured by IGM Resins BV) can be used.

[0038] Component (D) Bifunctional acrylic resin The photosensitive resin composition comprises (D) a compound represented by the following formula (4): [ka] [In the formula, each R a each independently represents a hydrogen atom or a methyl group; Each R b each independently represents a divalent hydrocarbon group, x and y each independently represent an integer of 1 to 5. It is preferable that the composition further contains a bifunctional acrylic resin represented by the following formula: This bifunctional acrylic resin may be referred to as component (D) or the bifunctional acrylic resin of component (D).

[0039] R in Equation (4) b are each independently a methylene group or a p-phenylene group. b is a methylene group, and R a R in the formula (4) may be a methyl group. b is a phenylene group, and R a may be a hydrogen atom.

[0040] When the photosensitive resin composition contains a bifunctional acrylic resin as component (D), when the photosensitive resin composition is irradiated with active energy rays (e.g., ultraviolet rays), the reaction does not proceed easily at an exposure dose below a certain amount. At an exposure dose exceeding a certain amount, the reaction proceeds rapidly, and component (D) reacts sufficiently with component (A) together with component (B), and a cured product with reduced film loss after development is obtained. Component (D) is bifunctional, that is, has two acryloyl groups, so that, even if component (A) has a low molecular weight, for example, after component (A) and component (B) react rapidly, component (A) that has not yet reacted reacts with component (D). Therefore, a cured product with good pattern formability by photolithography and reduced film loss after development is obtained. When the photosensitive resin composition contains component (D), it is possible to use a low molecular weight component (A). Therefore, the film formability of the photosensitive resin composition can be improved. Therefore, a film of the photosensitive resin composition can be formed by a relatively simple method such as spin coating. In the case of a monofunctional acrylic resin having one acryloyl group per molecule, after the reaction between component (A) and component (B), the reaction between the incompletely reacted component (A) and the monofunctional acrylic resin does not proceed, and film loss may occur after development. Even in the case of a polyfunctional acrylic resin having three or more acryloyl groups per molecule, the number of functional groups is too large, and after the reaction between component (A) and component (B), the reaction between the incompletely reacted component (A) and the polyfunctional acrylic resin having three or more acryloyl groups per molecule does not proceed, and film loss may occur after development.

[0041] Examples of component (D) include ethoxylated bisphenol A diacrylate (diacrylate of bisphenol A bonded to (poly)ethylene glycol), propoxylated bisphenol A diacrylate (diacrylate of bisphenol A bonded to (poly)propylene glycol), ethoxylated neopentyl glycol diacrylate (diacrylate of neopentyl glycol bonded to (poly)ethylene glycol), and propoxylated neopentyl glycol diacrylate (diacrylate of neopentyl glycol bonded to (poly)propylene glycol). As the bifunctional acrylic resin of component (D), one type of resin may be used, or two or more types of resins may be used in combination.

[0042] In the photosensitive resin composition, the mass ratio (D / B+D) of component (D) to the total amount of component (B) and component (D) is preferably 0.01 to 0.99, more preferably 0.02 to 0.80, even more preferably 0.03 to 0.70, and even more preferably 0.04 to 0.60. When the photosensitive resin composition contains component (D), the film-forming property of the photosensitive resin composition is good when the mass ratio (D / B+D) of component (D) to the total amount of component (B) and component (D) is in the range of 0.01 to 0.99. Therefore, by irradiating the photosensitive resin composition with active energy rays (e.g., ultraviolet rays), a cured product in which film loss after development is further suppressed can be obtained.

[0043] The content of component (D) in the photosensitive resin composition is preferably 59.0 mass% or less, more preferably 1.0 to 57.0 mass%, further preferably 3.0 to 55.0 mass%, and even more preferably 5.0 to 50.0 mass% based on 100 mass% of the photosensitive resin composition. When the photosensitive resin composition contains component (D), if the content of component (D) in 100 mass% of the photosensitive resin composition is 59.0 mass%, the film formability of the photosensitive resin composition is good. Therefore, by irradiating the photosensitive resin composition with active energy rays (e.g., ultraviolet rays), a cured product in which film loss after development is further suppressed can be obtained.

[0044] As component (D), a commercially available product can be used. Examples of commercially available products of component (D) include ethoxylated (4) bisphenol A diacrylate SR601 (manufactured by Sartomer Chemical Co.) and propoxylated (2) neopentyl glycol diacrylate SR9003B (manufactured by Sartomer Chemical Co.). Component (D) can be prepared by a known method. For example, (CH3)2(CR b OH)2(wherein, R b Component (D) can be prepared by a process comprising reacting a suitable diol compound having a structure represented by the formula (III) (having the same meaning as above) with acrylic acid or a derivative thereof.

[0045] Component (E) Crystalline or amorphous thermoplastic resin The photosensitive resin composition may further contain a component (E) which is a crystalline or amorphous thermoplastic resin (excluding bifunctional acrylic resins). This thermoplastic resin may be referred to as component (E) or the thermoplastic resin of component (E). When the photosensitive resin composition contains the thermoplastic resin of component (E), for example, the temperature characteristics of the photosensitive resin composition can be improved, and the moldability of the photosensitive resin composition can be improved.

[0046] Examples of the crystalline thermoplastic resin of component (E) include at least one selected from the group consisting of liquid crystal polymer, polyethylene, polypropylene, polyacetal, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, polyether ketone, and polytetrafluoroethylene. Examples of the amorphous thermoplastic resin of component (E) include at least one selected from the group consisting of polyvinyl chloride, polystyrene, polymethyl methacrylate, acrylonitrile-butadiene-styrene, polycarbonate, polyether sulfone, polyether imide, and polyamide imide. As the thermoplastic resin of component (E), one type of resin may be used, or two or more types of resins may be used in combination.

[0047] The content of component (E) in the photosensitive resin composition is preferably 40.0% by mass or less, preferably 1.0 to 35.0% by mass, more preferably 2.0 to 30.0% by mass, even more preferably 3.0 to 25.0% by mass, and even more preferably 5.0 to 20.0% by mass, based on 100% by mass of the photosensitive resin composition. When the content of component (E) in 100% by mass of the photosensitive resin composition is 40.0% by mass or less, a cured product in which film loss after development is suppressed by irradiation of the photosensitive resin composition with active energy rays (e.g., ultraviolet rays) can be obtained. Furthermore, other properties such as temperature characteristics and moldability of the photosensitive resin composition can be improved.

[0048] Component (F) Coupling agent The photosensitive resin composition may contain a coupling agent. The coupling agent is a compound having two or more different functional groups in one molecule. One of the functional groups is a functional group that chemically bonds with an inorganic material, and the other is a functional group that chemically bonds with an organic material. When the photosensitive resin composition contains a coupling agent, the adhesion between the photosensitive resin composition and other materials can be increased. In this specification, the coupling agent may be referred to as component (F) or a coupling agent of component (F).

[0049] Examples of the coupling agent of component (F) include at least one selected from the group consisting of silane coupling agents, aluminum coupling agents, and titanium coupling agents. As the coupling agent of component (F), one type of coupling agent may be used, or two or more types of coupling agents may be used in combination.

[0050] Component (F) is preferably a silane coupling agent. Examples of functional groups contained in the silane coupling agent include an alkoxy group, a vinyl group, an epoxy group, a styryl group, a methacryl group, an acryl group, an amino group, an isocyanurate group, a ureido group, a mercapto group, a sulfide group, and an isocyanate group.

[0051] The content of component (F) in the photosensitive resin composition is preferably 30.0 mass% or less, more preferably 0.10 to 30.0 mass%, further preferably 0.20 to 20.0 mass%, further more preferably 0.50 to 10.0 mass%, and particularly preferably 0.80 to 3.0 mass% or less, based on 100 mass% of the photosensitive resin composition. When the photosensitive resin composition contains component (F), if the content of component (F) in 100 mass% of the photosensitive resin composition is 30.0 mass% or less, the adhesion between the photosensitive resin composition and other materials is good. Examples of other materials include a substrate, etc.

[0052] As the component (F), a commercially available product can be used. Examples of the commercially available product of the component (F) include 3-methacryloxypropyltrimethoxysilane KBM 503, vinyltrimethoxysilane KBM 1003 (manufactured by Shin-Etsu Silicone Co., Ltd.), and Coatsil MP200 Silane (manufactured by Momentive Performance Materials Japan Co., Ltd.).

[0053] A film-forming agent may be added to the photosensitive resin composition to impart flexibility. For example, when the insulating layer of the wiring structure is formed using the photosensitive resin composition, if the photosensitive resin composition is given flexibility by adding a film-forming agent, the film can be easily formed. Examples of the film-forming agent include at least one selected from the group consisting of phenoxy resin and acrylic resin (excluding the bifunctional acrylic resin represented by formula (4)). Examples of the phenoxy resin include polyhydroxy polyether. This polyhydroxy polyether is synthesized by a direct reaction between a dihydric phenol compound and epichlorohydrin, or by an addition polymerization reaction between a dihydric phenol compound and a diglycidyl ether. The acrylic resin (excluding the bifunctional acrylic resin represented by formula (4)) refers to a homopolymer or copolymer of acrylic acid and / or methacrylic acid or a derivative thereof (e.g., ester and amide). As the film-forming agent, a commercially available product may be used. Commercially available film-forming agents include, for example, bisphenol A type phenoxy resin 4250 (manufactured by Mitsubishi Chemical Corporation), bisphenol A type phenoxy resin Fx316 (manufactured by Nippon Steel Chemical & Material Co., Ltd.), bisphenol A type phenoxy resin YP50 (manufactured by Nippon Steel Chemical & Material Co., Ltd.), and polymethyl methacrylate-butylacrylamide triblock copolymer Nanostrength (registered trademark) M52N (manufactured by ARKEMA).

[0054] The photosensitive resin composition may further contain at least one additive selected from the group consisting of an ion trapping agent, a leveling agent, an antioxidant, and a thixotropic agent, as required, and may also contain a viscosity modifier, a flame retardant, a solvent, or the like.

[0055] Method for producing photosensitive resin composition The photosensitive resin composition can be produced by mixing component (A), component (B) and component (C). The photosensitive resin composition can be produced by mixing at least one component selected from the group consisting of component (D), component (E) and component (F) with component (A), component (B) and component (C) as necessary. The method for producing the photosensitive resin composition is not particularly limited. The photosensitive resin composition can be produced by mixing the raw materials of each component with a mixer such as a mortar mixer, a pot mill, a three-roll mill, a hybrid mixer, a rotary mixer or a twin-shaft mixer. These components may be mixed simultaneously, or some of them may be mixed first and the rest may be mixed later. The photosensitive resin composition may also be produced by using an appropriate combination of the above devices.

[0056] cured product A cured product is obtained by irradiating the photosensitive resin composition with active energy rays. A uniform thin film of the photosensitive resin composition can be formed by a relatively simple film formation method such as spin coating. A fine and accurate pattern can be formed by patterning the thin film formed using the photosensitive resin composition by photolithography. The photosensitive resin composition can be sufficiently cured by irradiation with active energy rays. There is no need to treat the patterned thin film at high temperatures (e.g., 150°C or higher). Therefore, deformation of the formed wiring pattern due to shrinkage or the like that occurs during high-temperature treatment can be suppressed.

[0057] In the cured product obtained by curing the photosensitive resin composition, it is preferable that the relative dielectric constant (ε) is, for example, 3.0 or less, and the dielectric loss tangent (tan δ) is, for example, 0.01 or less. A cured product having a low dielectric constant and a low dielectric loss tangent has good electrical properties when used in a high frequency range, and can be used in electronic components or semiconductor devices used in a high frequency range. In addition, when the photosensitive resin composition is irradiated with active energy rays (e.g., ultraviolet rays), the reaction does not proceed easily at an exposure dose of a certain amount or less. When the exposure dose exceeds a certain amount, the reaction proceeds rapidly, the photosensitive resin composition is sufficiently cured, and a cured product in which the film loss after development is suppressed is obtained. Therefore, the photosensitive resin composition can be suitably used as a material for forming a rewiring layer (e.g., a material for an insulating layer). The photosensitive resin composition can be suitably used as a material for forming a wiring structure including a rewiring layer.

[0058] The photosensitive resin composition can also be used as an interlayer adhesive film between multilayer wirings of a wiring structure, and can also be used for bonding and sealing components constituting a semiconductor device, a camera module, or an image sensor module.

[0059] The embodiments of the present disclosure can provide a photosensitive resin composition, a cured product thereof, a wiring structure including the cured product, an electronic component including the cured product, a semiconductor device including the cured product, and a camera module including the cured product. Examples of electronic components include electronic components including wiring structures used in electronic devices such as mobile phones, smartphones, notebook computers, and tablet terminals. Examples of semiconductor devices include memory devices such as D-RAM (Dynamic Random Access Memory), processor devices such as CPU (Central Processing Unit) and GPU (Graphics Processing Unit), light-emitting elements such as LED (Light Emitting Diode), and driver ICs used in LCD (Liquid Crystal Display), etc.

[0060] Manufacturing method of the cured product An example of a method for producing a cured product using a photosensitive resin composition will be described. The method for producing a cured product may include a step of applying the photosensitive resin composition to an object, a pre-heat treatment (soft bake) step, a step of irradiating with active energy rays, and a development step. The object to which the photosensitive resin composition is applied may be surface-treated before the photosensitive resin composition is applied. The method for producing a cured product may include a step of surface-treating the object.

[0061] Surface treatment process for objects The object to be subjected to the present invention may be, for example, a semiconductor wafer. The semiconductor wafer may be subjected to a surface activation treatment. The surface activation treatment may be a plasma activation treatment. By subjecting the object to a surface treatment, the bonding strength between the photosensitive resin composition and the object to the present invention may be increased.

[0062] Coating process The photosensitive resin composition is preferably applied to a surface-treated object. As an apparatus for applying the photosensitive resin composition, a screen printer, a dispenser, a spin coater (e.g., Headway Spinner (manufactured by Headway Research., Inc.) and WS-650-8B (manufactured by Laurell)) and the like can be used. In the application step, the photosensitive resin composition is desirably applied so that a uniform thin film is formed on the surface of the object.

[0063] Pre-heat treatment (soft bake) The photosensitive resin composition applied to the object may be subjected to a pre-heat treatment (soft bake) before being irradiated with active energy rays. The temperature of the pre-heat treatment may be 80°C or higher and lower than 150°C, or may be 100°C to 140°C. The pre-heat treatment may be performed using a hot plate or a convection oven (hot air circulation dryer). The time for which the heat treatment is performed is 1 to 10 minutes, and preferably 5 to 10 minutes.

[0064] Irradiation process After the above pre-heat treatment, which is carried out as necessary, it is preferable to irradiate the photosensitive resin composition applied to the object with active energy rays to obtain a cured product. A patterned cured product may be formed by photolithography using a photomask. Examples of active energy rays include ultraviolet rays of 10 nm to 380 nm and visible light of 380 nm to 760 nm. The wavelength of the active energy rays for curing the photosensitive resin composition is preferably 10 nm to 600 nm, more preferably 100 nm to 500 nm, further preferably 250 nm to 450 nm, and particularly preferably 300 nm to 400 nm. The atmospheric temperature when irradiating the active energy rays may be 0°C to 100°C, 10°C to 50°C, or 15°C to 35°C. The time for irradiating the active energy rays varies depending on the volume of the object to be irradiated, and is usually 5 seconds to 60 minutes.

[0065] Development process After irradiation with active energy rays, it is preferable to remove the photomask and wash the uncured photosensitive resin composition with a developer or solvent to obtain a cured product with a pattern. A solvent may be used as the developer. Examples of the solvent used as the developer include alcohol-based solvents, ether-based solvents, ketone-based solvents, amide-based solvents, ester-based solvents, and hydrocarbon-based solvents. Examples of the alcohol-based solvents include C1-C ... 18 Monoalcohol solvents such as ethylene glycol, and C2-C 18Examples of the polyhydric alcohol-based solvents include the polyhydric alcohol-based solvents. Examples of the ether-based solvents include dialkyl ether-based solvents such as diethyl ether and dipropyl ether, cyclic ether-based solvents such as tetrahydrofuran, and aromatic-containing ether-based solvents such as diphenyl ether. Examples of the ketone-based solvents include chain ketone-based solvents such as acetone, butanone, and methyl isobutyl ketone, and cyclic ketone-based solvents such as cyclopentanone and cyclohexanone. Examples of the amide-based solvents include cyclic amide-based solvents such as N,N'-dimethylimidazolidinone and N-methylpyrrolidone, and chain amide-based solvents such as N-methylformamide and N,N-dimethylformamide. Examples of the ester-based solvents include monocarboxylic acid ester-based solvents such as n-butyl acetate, polyhydric alcohol partial ether acetate-based solvents such as diethylene glycol mono-n-butyl ether acetate and propylene glycol monomethyl ether acetate, and lactone-based solvents such as γ-butyrolactone. Examples of the hydrocarbon solvent include aliphatic hydrocarbon solvents such as n-hexane, and aromatic hydrocarbon solvents such as benzene and toluene. The solvent used as the developer is preferably a ketone solvent or an ester solvent. The solvent used as the developer is preferably cyclopentanone, cyclohexanone, or propylene glycol monomethyl ether acetate. After cleaning with the solvent, a cleaning (rinsing) process may be performed with deionized water or the like.

[0066] Embodiments of the present disclosure can provide a photosensitive resin composition, a cured product thereof, a wiring structure including the cured product, an electronic component including the cured product, a semiconductor device including the cured product, and a camera module including the cured product. EXAMPLES

[0067] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to examples. The technology of the present disclosure is not limited to these examples. In the following examples and comparative examples, the numbers indicating the blending ratio of each component contained in the photosensitive resin composition all indicate parts by mass.

[0068] Component (A): Modified polyphenylene ether (PPE) resin A-1: OPE 2st 1200 (modified polyphenylene ether resin represented by formula (1) having vinyl groups at both ends (reaction product of 2,2',3,3',5,5'-hexamethylbiphenyl-4,4'-diol·2,6-dimethylphenol condensate and chloromethylstyrene, number average molecular weight 1160) (manufactured by Mitsubishi Gas Chemical Company, Inc.)

[0069] Component (B): Silsesquioxane compound B-1: Acrylo POSS Cage Mixture MA0736 (represented by formula (3), has a cage-type silsesquioxane structure, and contains a compound having eight acryloyloxypropoxy groups) (manufactured by Hybrid Plastic Inc.)

[0070] Component (C): Photopolymerization initiator C-1: Irgacure OXE-02 (oxime ester photoinitiator, manufactured by BASF) C-2: Omnirad 819 (formerly Irgacure 819) (acylphosphine oxide photoinitiator, manufactured by IGM Resins BV) C-3: Omnird 369 (formerly Irgacure 369) (alkylphenone photoinitiator, manufactured by IGM Resins BV)

[0071] Component (E): Bifunctional acrylic resin E-1: SR9003B (propoxylated (2) neopentyl glycol diacrylate, manufactured by Sartomer Chemical Co.) E-2: SR601 (ethoxylated (4) bisphenol A diacrylate, manufactured by Sartomer Chemical Co.)

[0072] Examples 1 to 12, Comparative Examples 1 to 4 Each photosensitive resin composition of the Examples and Comparative Examples was produced by mixing component (A), component (B), component (C), and, as necessary, component (D) in the formulations shown in Tables 1 to 3 using a planetary centrifugal mixer (ARE-310, Thinky Corporation).

[0073] Manufacturing of hardened products: Coating process and pre-heat treatment process Using each of the photosensitive resin compositions of the Examples and Comparative Examples, a cured product constituting a wiring pattern was produced by photolithography. First, a silicon wafer having a diameter of 150 mm was prepared as a test object. Each of the photosensitive resin compositions of the Examples and Comparative Examples was spin-coated onto a silicon wafer using a spin coater (WS-650-8B, manufactured by Laurell). In the spin coating, the spin coater was operated at 500 rpm for 12 seconds, and then at 1500 rpm for 20 seconds. In this way, the photosensitive resin composition was spin-coated onto the surface of the silicon wafer to form a thin film. Next, the silicon wafer having the thin film of the photosensitive resin composition was pre-heat-treated (soft baked) at 120°C for 5 minutes in an air atmosphere, and the photosensitive resin composition was dried by heating. As a result, a sample having a thin film of the photosensitive resin composition with a thickness of 13 μm was obtained. The thickness of the thin film of the photosensitive resin composition was measured by a stylus profiling system (DektakXT, manufactured by BRUKER). Using this sample, the following photolithography test was carried out to obtain a cured product cured by photolithography.

[0074] Manufacturing of hardened products: irradiation process Photolithography Testing A mask (1951 USAF resolution test chart, thickness 1.5 mm, manufactured by Advance Reproductions) was placed on the surface of the thin film made of the photosensitive resin composition sample. With the mask in close contact with the surface of the thin film, the sample was irradiated with ultraviolet light under the following conditions. The mask had a number of rectangular regions (450 μm×450 μm). In each of these regions, two wiring patterns were formed, each of which had three straight lines arranged in parallel. The two wiring patterns, each of which had three straight lines arranged in parallel, were arranged in directions perpendicular to each other. One of the wiring patterns in these regions was made of three straight lines with an L / S of 2 μm / 2 μm.

[0075] UV irradiation conditions Ultraviolet irradiation device: Bluewave(registered trademark) QX4 (DYMAX) (The light source used was LED Heads RediCure (registered trademark) (manufactured by DYMAX).) Active energy rays: Ultraviolet rays: Wavelength 365 nm Irradiation dose: 135mJ / cm 2 Irradiation time: 10 seconds Distance between mask and light source: 45μm

[0076] Manufacturing of hardened products: Development process After completion of the ultraviolet irradiation, the mask was removed from the sample. A development process was performed using propylene glycol monomethyl ether acetate (2PGMEA) as the developer to wash away the uncured photosensitive resin composition from the sample. In the development process, two types of development process were performed: one development process for 50 seconds and two development processes for 50 seconds. In the one development process for 50 seconds, the sample was immersed in an amount of developer that immersed the entire sample for 50 seconds. In the two development processes for 50 seconds, the sample was immersed in the developer for 50 seconds, then the sample was taken out of the developer and naturally dried in the air, and then the sample was again immersed in the developer for 50 seconds. After the development process, the sample was taken out of the developer and naturally dried in the air. As a result, a cured product having a wiring pattern structure was obtained.

[0077] Evaluation method The thin films and cured products obtained by the above-mentioned method for producing a cured product were evaluated as follows. The evaluation results are shown in the table below.

[0078] Film forming properties (suitability for film formation) The thickness of the thin film formed by spin-coating each of the photosensitive resin compositions of the Examples and Comparative Examples on a silicon wafer was visually confirmed. The film-forming properties of each of the photosensitive resin compositions of the Examples and Comparative Examples were evaluated as follows. Excellent: A uniform thin film is formed over the entire surface of the silicon wafer. Bad: There are parts on the silicon wafer surface where the thin film is not formed.

[0079] Patterning ability The cured products after the photolithography test were observed and photographed by a scanning electron microscope (SEM). The patterning properties were confirmed from the SEM photographs obtained by this photographing. FIG. 1 is an enlarged view showing an example of a three-line pattern with an L / S of 2 μm / 2 μm. The patterning properties of each of the cured products according to the examples and comparative examples were evaluated as follows. Excellent: When it is confirmed in the SEM photograph that three patterns with L / S of 2μm / 2μm have been formed. Good: In the SEM photograph, it is confirmed that the three patterns are formed, although some of the three patterns include patterns where the L / S is not 2 μm / 2 μm. Bad: In the SEM photograph, it is confirmed that the three patterns are not formed and that a crushed pattern has been formed.

[0080] Contrast Curve In the photolithography test, the photosensitive resin compositions of the Examples and Comparative Examples were used, and the ultraviolet ray exposure dose (mJ / cm 2) was changed to obtain a cured product. For each irradiation dose, the film thickness ratio, which is the ratio of the film thickness of the cured product after ultraviolet irradiation to the film thickness of the thin film of the photosensitive resin composition before ultraviolet irradiation, was measured. The relationship between the irradiation dose and the film thickness ratio was plotted. The film thickness of the thin film of the photosensitive resin composition before ultraviolet irradiation was 13 μm as described above. The film thickness of the cured product after ultraviolet irradiation was measured as follows. That is, the cross section of one of the three patterns formed on the sample was observed and photographed by SEM. From the cross-sectional SEM photograph obtained by this photography, the thickness from the silicon wafer surface to the top of the pattern was derived, and this thickness was measured as the film thickness of the cured product. In the ideal contrast curve, the photosensitive resin composition does not react at an irradiation dose below a certain amount, and when the irradiation dose exceeds a certain amount, the reaction proceeds rapidly, and the rise of the film thickness ratio to the irradiation dose is steep. In addition, in the ideal contrast curve, even if the irradiation dose is further increased thereafter, it can be confirmed that the film thickness ratio is constant and the reaction has reached saturation. The contrast curves showing the relationship between the exposure dose and the film thickness ratio when the photosensitive resin compositions of the Examples and Comparative Examples were cured were evaluated as follows. Excellent: In the contrast curve showing the relationship between the exposure dose and the film thickness ratio, the exposure dose is 30 mJ / cm 2 Below this, the film thickness ratio remains close to 0 and the exposure dose is 30 mJ / cm 2 Over 50mJ / cm 2 to 100 mJ / cm 2 When the film thickness ratio increases by 40% or more while increasing to Good: In the contrast curve showing the relationship between the exposure dose and the film thickness ratio, the exposure dose is 30 mJ / cm 2 Below this, the film thickness ratio is 1-10% and the exposure dose is 30 mJ / cm 2 More than 50mJ / cm 2 to 100 mJ / cm 2 When the film thickness ratio increases by 40% or more while increasing to Bad: In the contrast curve showing the relationship between the exposure dose and the film thickness ratio, the exposure dose is 30 mJ / cm 2 Even if it is less than 10%, the film thickness ratio exceeds 10% and the exposure dose is 30 mJ / cm 2 More than 50mJ / cm2 to 100 mJ / cm 2 , but the increase in film thickness ratio is less than 40%.

[0081] Dielectric constant (ε), dielectric tangent (tan δ) The measurement sample was prepared as follows. The photosensitive resin composition was applied to a support, and pre-heat-treated (soft baked) at 120° C. for 5 minutes in an air atmosphere to dry the photosensitive resin composition by heating, thereby obtaining a thin film of the photosensitive resin composition having a thickness of 13 μm. The relative dielectric constant (ε) and dielectric loss tangent (tan δ) of the measurement sample were measured at a dielectric resonance frequency of 10 GHz using a split post dielectric resonator (SPDR). The relative dielectric constant (ε) is preferably 1.5 to 3.3, and more preferably 1.5 to 2.8. The dielectric loss tangent (tan δ) is preferably 0.001 to 0.010.

[0082] [Table 1]

[0083] [Table 2]

[0084] [Table 3]

[0085] As shown in Tables 1 to 3, the photosensitive resin compositions of Examples 1 to 12 are excellent in film-forming properties (filming) and patterning properties. Furthermore, the photosensitive resin compositions of Examples 1 to 12 were sufficiently cured by ultraviolet irradiation, and cured products with suppressed film loss after development were obtained. Furthermore, the photosensitive resin compositions of Examples 1 to 12 had low relative dielectric constants (ε) and dielectric loss tangents (tan δ), and had good electrical properties when used in high frequency regions. In the photosensitive resin compositions of Examples 1 to 12, the contrast curves showing the relationship between the exposure dose and the film thickness ratio were close to ideal contrast curves. That is, in these contrast curves, the reaction of the photosensitive resin composition does not proceed easily at an exposure dose of a certain amount or less, and when the exposure dose exceeds a certain amount, the reaction proceeds rapidly, the rise of the film thickness ratio is steep, and thereafter, even if the exposure dose is further increased, the film thickness ratio becomes constant. Therefore, according to the photosensitive resin compositions of Examples 1 to 12, fine and accurate patterns with an L / S of 2 μm / 2 μm or less could be formed by photolithography.

[0086] FIG. 2 is a graph showing the contrast curves for each cured product obtained using the photosensitive resin compositions of Examples 6, 7, and 12. This contrast curve shows the relationship between the exposure dose and the film thickness ratio when a 50-second development process was performed once and a 50-second development process was performed twice. It was confirmed that the photosensitive resin composition of the same Example exhibited a contrast curve with a similar tendency even when a 50-second development process was performed once and a 50-second development process was performed twice. As shown in FIG. 2, the photosensitive resin composition of Example 6 exhibited a contrast curve close to the ideal contrast curve. That is, in the contrast curve of Example 6, the reaction of the photosensitive resin composition does not proceed easily at an exposure dose of a certain amount or less, and the reaction proceeds when the exposure dose exceeds a certain amount, and then the film thickness ratio becomes constant even if the exposure dose is further increased. The photosensitive resin composition of Example 7 exhibited a contrast curve closer to the ideal contrast curve. That is, in the contrast curve of Example 7, the reaction of the photosensitive resin composition does not proceed easily at an exposure dose below a certain amount, and when the exposure dose exceeds a certain amount, the reaction proceeds rapidly, the film thickness ratio rises sharply, and the film thickness ratio remains constant even if the exposure dose is further increased. The photosensitive resin composition of Example 12 contains a bifunctional acrylic resin of component (D), so it showed a contrast curve close to an ideal contrast curve due to ultraviolet irradiation. That is, in the contrast curve of Example 12, even after the curing proceeds rapidly, the component (A) that has not yet reacted and the component (D) react, and the film thickness ratio increases gradually.

[0087] As shown in Tables 1 and 3, the photosensitive resin compositions of Comparative Examples 1 to 4 did not show contrast curves close to the ideal contrast curve. The photosensitive resin composition of Comparative Example 2 did not contain the PPE of component (A), and therefore had poor film-forming and patterning properties. The photosensitive resin compositions of Comparative Examples 3 and 4 contained the bifunctional acrylic resin of component (D) but did not contain the silsesquioxane compound of component (B). For this reason, even if the exposure dose exceeded a certain amount, the reaction did not proceed rapidly, and a contrast curve close to the ideal contrast curve was not obtained.

[0088] As shown in Fig. 3, the photosensitive resin composition of Comparative Example 1 does not contain the silsesquioxane compound of component (B). Therefore, the exposure dose was 30 mJ / cm 2 Even below this, curing proceeds and the film thickness ratio increases. 2 Over 50mJ / cm 2 to 100 mJ / cm 2 Even when the concentration of the photosensitive resin composition in Comparative Example 1 was increased to 100%, the reaction did not proceed so rapidly that the increase in the film thickness ratio was less than 30%. Therefore, a large amount of radiation must be applied until the film thickness ratio reaches a certain level. Thus, the photosensitive resin composition in Comparative Example 1 did not show a contrast curve close to the ideal contrast curve. [Industrial Applicability]

[0089] The photosensitive resin composition according to one embodiment of the present disclosure can be used as an insulating material for wiring without requiring high-temperature heat treatment. The photosensitive resin composition can be used, for example, as an insulating layer material for forming a rewiring layer of a wiring structure, and as an interlayer adhesive film. Furthermore, the photosensitive resin composition according to one embodiment of the present disclosure can be used for adhesion and sealing of components constituting electronic components, semiconductor devices, camera modules, or image sensor modules.

Claims

1. The following components (A) to (C): (A) The following formula (1): 【Chemistry 12】 [In the formula, R １ ~R ３ each independently represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group, X represents a q-valent unsubstituted or substituted aromatic hydrocarbon group; Y is represented by the following formula (2): 【Chemistry 13】 [In the formula, R ４ ~R ７ each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkenylcarbonyl group. represents an unsubstituted or substituted phenol repeating unit represented by the formula: m represents an integer from 1 to 100; n represents an integer from 1 to 6; and q represents an integer of 1 to 4. A modified polyphenylene ether resin represented by the formula: (B) The following formula (3): 【Chemistry 14】 A compound represented by the formula: (C) a photopolymerization initiator, Including, Photosensitive resin composition.

2. (D) The following formula (4): 【Chemistry 15】 [In the formula, each R ａ each independently represents a hydrogen atom or a methyl group; Each R ｂ each independently represents a divalent hydrocarbon group, x and y each independently represent an integer of 1 to 5. The photosensitive resin composition according to claim 1 .

3. The component (C) is at least one selected from the group consisting of an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, and an alkylphenone-based photopolymerization initiator. The photosensitive resin composition according to claim 1 or 2.

4. The mass ratio of the component (A) to the total amount of the component (A) and the component (B) is 0.10 to 0.

99. The photosensitive resin composition according to any one of claims 1 to 3.

5. The content of the component (C) is 1.0 to 20.0% by mass relative to 100% by mass of the photosensitive resin composition; The photosensitive resin composition according to any one of claims 1 to 4.

6. The mass ratio of the component (D) to the total amount of the components (B) and (D) is 0.01 to 0.

99. The photosensitive resin composition according to any one of claims 2 to 5.

7. (E) further containing a crystalline or amorphous thermoplastic resin (excluding difunctional acrylic resins); The photosensitive resin composition according to any one of claims 1 to 6.

8. The component (E) is at least one selected from the group consisting of liquid crystal polymers, polyethylene, polypropylene, polyacetal, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, polyether ketone, polytetrafluoroethylene, polyvinyl chloride, polystyrene, polymethyl methacrylate, acrylonitrile-butadiene-styrene, polycarbonate, polyethersulfone, polyetherimide, and polyamideimide. The photosensitive resin composition according to claim 7.

9. For forming a wiring structure including a redistribution layer, The photosensitive resin composition according to any one of claims 1 to 8.

10. A cured product obtained by curing the photosensitive resin composition according to any one of claims 1 to 9.

11. A wiring structure comprising the cured product according to claim 10.

12. An electronic part comprising the cured product according to claim 10.

13. A semiconductor device comprising the cured product according to claim 10.

14. A camera module comprising the cured product according to claim 10.

Images