High power repetition rate solid-state switch and method with combined optical and electrical amplification control

Abstract

The present invention discloses a high-power repetition rate solid-state switch and method by the combined control of optical amplification and electrical amplification, the switch is composed of an optical pulse unit, an optical amplification device, an optical coupling device and an optoelectronic semiconductor structure, the optoelectronic semiconductor structure is a multi-layer doped structure formed on the optoelectronic effect material based on the optical pulse unit, the optical amplification device is used to output an optical pulse signal to the optical amplification device, the optical coupling device is used to shape the amplified optical pulse signal, diffuse it into an array optical pulse signal and output it to the optoelectronic semiconductor structure, the optical effect material generates photon-induced carriers under the irradiation of the optical pulse signal, the photon-induced carriers perform photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification in the multi-layer doped structure to realize high-power amplification conduction. The present invention provides a switch device with the combined control of optical amplification and electrical amplification, which has the advantages of high voltage, large current, high conduction speed, high charge transfer amount and the like.

Description

[Technical field]

[0001] The present invention relates to the technical field of high power semiconductor switches, and in particular to a high power repetition rate solid-state switch and method with combined control of optical and electrical amplification. [Background technology]

[0002] In existing high-power switch technology, the only switches that simultaneously have high voltage, large current, high conduction speed, high charge transfer rate, and accurate delay time capabilities are gas-based switches such as hydrogen thyratrons, pseudo-spark switches, and gas switches. However, all of these switches have a limited life span and cannot be used maintenance-free. Furthermore, due to the working mechanism factors of gas-based switches, there is a possibility of self-destruction in the switches, i.e., accidental self-conduction may occur.

[0003] In existing power semiconductor switch technologies, switch devices cannot simultaneously have high voltage, large current, high conduction speed, high charge transfer amount, and accurate delay time capabilities. Currently, more common power semiconductor switch devices such as IGBTs, MOSFETs, MCTs, and SGTOs have difficulty achieving a current change rate (di / dt) of several hundred kiloamperes per microsecond (kA / μs) for peak power of tens of megawatts (MW).

[0004] Gallium arsenide and silicon carbide photoconductive switches cannot achieve high charge transfer rates, and the current is limited, generally unable to exceed 10 kA, and the pulse width is limited to the order of a few hundred nanoseconds. Silicon photoconductive switches can handle wide pulse widths, but are unable to withstand long-term DC voltages. Summary of the Invention

[0005] In order to overcome the limitations in existing switch technology, the present invention provides a high-power repetition rate solid-state switch with combined control of optical and electrical amplification, in which the power amplification factor of the switch device is alternated several times through combined control of optical and electrical amplification, and finally a high-power amplification factor is realized, so that the switch device has the advantages of high voltage, large current, high conduction speed, high charge transfer and precise delay time.

[0006] The present invention is realized by the following technical solutions: The high-power repetition-rate solid-state switch with combined control of optical and electrical amplification is composed of an optical pulse unit, an optical amplification device, an optical coupling device and an optoelectronic semiconductor structure. Wherein, the photoelectric semiconductor structure is a multi-layer doped structure formed on the photoelectric effect material based on the photoelectric effect material, forming a plurality of PNP structures and NPN structures, each of the PNP structures and the NPN structures having no base in electrical contact; the optical pulse unit is used for outputting an optical pulse signal to the optical amplifying device; the optical amplification device is used to amplify the optical pulse signal; The optical coupling device is used to shape and spread the amplified optical pulse signal into an array optical pulse signal, and output the optical-electrical semiconductor structure; The photoelectric effect material generates photon-induced carriers under irradiation of an optical pulse signal, and the photon-induced carriers perform photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification in the multi-layer doped structure to realize high-power amplification conduction.

[0007] Compared with existing switch devices, the novel switch device proposed by the present invention overcomes the limitations of existing switch devices by combining control of optical amplification and electrical amplification, and has characteristics such as high voltage, large current, high conduction speed, high charge transfer rate, and precise delay time, and has a wide range of applications.

[0008] In a preferred embodiment, the optical pulse unit of the present invention comprises a pulse power source and an electrical-optical conversion device, The pulsed power supply is used to convert the supply voltage into a high-power voltage; The electrical-to-optical conversion device converts a high-power electrical source into an optical pulse signal.

[0009] In a preferred embodiment, the pulsed power supply of the present invention is a laser power supply.

[0010] In a preferred embodiment, the electrical-to-optical conversion device of the present invention is a gas media device or a solid media device.

[0011] In a preferred embodiment, the electrical-to-optical conversion device of the present invention is a xenon lamp or a laser diode.

[0012] In a preferred embodiment, the optical amplifying device of the present invention is an optical amplifying crystal or an optical amplifying optical fiber.

[0013] In a preferred embodiment, the optical coupler of the present invention is an optical diffractive spectroscopic element, an optical lens or an arrayed optical fiber beam.

[0014] In preferred embodiments, the photovoltaic material of the present invention is silicon, gallium arsenide, silicon carbide or gallium nitride.

[0015] According to a second aspect, the present invention provides a method of operation based on the high power repetition rate solid-state switch described above, the method comprising the steps of: converting the supplied power into an optical pulse signal and outputting the optical pulse signal; amplifying an optical pulse signal; shaping the amplified optical pulse signal and spreading it into an array optical pulse signal; Irradiating an array of optical pulse signals onto a photoelectric effect material to generate photon-induced carriers; and photon-induced carriers effect photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification in the multi-layer doped structure to realize high power amplification conduction.

[0016] In a preferred embodiment, the photon-induced carrier multi-layer doped structure of the present invention performs photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification, specifically, At the beginning of switch conduction, photon-induced linear mode amplification conduction is performed; During the middle period of switch conduction, a composite amplified conduction of photon-induced linear mode and electric field-induced nonlinear mode is implemented. In the later stage of switch conduction, electric field induced nonlinear mode amplified conduction is implemented. The photon-induced linear mode amplification conduction is to directly irradiate the array light pulse signal to the N region of the PNP structure and the P region of the NPN structure, and perform high-speed amplification conduction for the corresponding regions; The electric field induced nonlinear mode amplified conduction is a well-established positive feedback mechanism that undergoes rapid diffusion conduction under the action of an electric field. Effect of the Invention

[0017] The present invention has the following advantages and beneficial effects. The high power repetition rate solid-state switch provided by the present invention is a novel switching device for high power pulse generation, which can provide high voltage, high current, fast leading edge, and high repetition rate pulse output.

[0018] The high power repetition rate solid-state switch device provided by the present invention has a working voltage of 0-30kV, a working current of 0-200kA, a current change rate (di / dt) of more than 400kA / μs, and a repetition rate of 0-10kHz.

[0019] The high power repetition rate solid-state switch device provided by the present invention is particularly applicable to high current fast leading edge pulsed power generation, and can be used as a replacement for gas switches, gas trigger tubes, hydrogen gated current tubes, pseudo spark switches, series MOSFETs, FIDs, SOS, PCSS photoconductive switches, etc. [Brief description of the drawings]

[0020] The accompanying drawings described herein are used to provide a further understanding of the embodiments of the present invention, constitute a part of this application, and are not intended to limit the embodiments of the present invention. [Figure 1] FIG. 2 is a block diagram showing the principle of a switch according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic diagram showing the work flow of a switch according to an embodiment of the present invention; [Diagram 3] FIG. 11 is a diagram illustrating an example 1 of a work flow of a switch according to an embodiment of the present invention. [Figure 4] FIG. 11 is a diagram illustrating an example 2 of the work flow of the switch according to the embodiment of the present invention. [Diagram 5] FIG. 11 is a test effect diagram of Example 1 of the switch according to the embodiment of the present invention. [Figure 6] FIG. 11 is a test effect diagram of Example 2 of the switch according to the embodiment of the present invention. [Figure 7] FIG. 11 is a test effect diagram of Example 3 of the switch according to the embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, the terms "comprise" or "may include" as used in each embodiment of the present invention indicate the presence of an invented feature, operation, or element, and do not limit the addition of one or more features, operations, or elements. Furthermore, it is to be understood that the terms "comprise", "have", and their equivalents as used in each embodiment of the present invention are intended to indicate only certain features, numbers, steps, operations, elements, components, or combinations of the foregoing, and may exclude one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing, or may add one or more features, numbers, steps, operations, elements, components, or combinations of the foregoing.

[0022] In each embodiment of the present invention, "or" or "at least one of A or / and B" includes any or all combinations of the words listed together. For example, "A or B" or "at least one of A or / and B" may include A, may include B, or may include both A and B.

[0023] The terms "first", "second", etc. used in each embodiment of the present invention modify each component in each embodiment, but do not limit the corresponding component. For example, the above expressions do not limit the order and / or importance of the elements. The above expressions are used only for the purpose of distinguishing one component from another component. For example, a first user device and a second user device are both user devices, but indicate different user devices. For example, a first element may be called a second element, and similarly, a second element may be called a first element, without departing from the scope of each embodiment of the present invention.

[0024] It should be noted that when a component is described as "connected" to another component, the first component may be directly connected to the second component, with a third component "connected" between the first and second components. Conversely, when a component is "directly connected" to another component, it is understood that there is no third component between the first and second components.

[0025] The terms used in each embodiment of the present invention are used only for the purpose of describing a specific embodiment, and do not limit each embodiment of the present invention. As used herein, the singular form includes the plural form unless the context clearly indicates otherwise. Unless otherwise specified, all terms (technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which each embodiment of the present invention belongs. The terms (e.g., terms defined in a commonly used dictionary, etc.) are interpreted as having the same meaning as the contextual meaning in the relevant technical field, and are not interpreted as having an idealized meaning or an overly formal meaning unless clearly defined in various embodiments of the present invention.

[0026] In order to make the objectives, technical solutions and advantages of the present invention clearer and easier to understand, the present invention will be described in more detail below in conjunction with examples and the accompanying drawings, but the exemplary embodiments of the present invention and their descriptions are only used for the purpose of interpreting the present invention and are not intended to limit the present invention.

[0027] <Example 1> Existing switch devices have limitations, such as insufficient repetition rate, low reliability and short life span for gas switch devices, slow conduction speed for power semiconductor switch devices, and small current and charge transfer for photoconductive switch devices. This embodiment provides a high-power repetition rate solid-state switch with composite control of optical amplification and electrical amplification, and the composite control of optical amplification and electrical amplification allows the power amplification factor of the device to be alternately amplified several times, finally realizing a high-power amplification factor, so that the switch device can obtain the advantages of high voltage, large current, high conduction speed, high charge transfer and accurate delay time.

[0028] As shown in FIG. 1, the high-power repetition-rate solid-state switch of this embodiment is mainly composed of a pulse power source, an electrical-optical conversion device, an optical amplification device, an optical coupling device and an optoelectronic semiconductor structure.

[0029] Here, the pulse power supply is used to provide high-power power supply. It may be a high-voltage pre-ignition type power supply, a constant current low-voltage power supply, a laser power supply, etc., and converts the power supply to high power to realize initial power amplification. In the embodiment of the present invention, a laser power supply is taken as an example for explanation, but is not limited thereto.

[0030] The electro-optical conversion device is used to convert the initial power output from the pulsed power supply into an optical pulse signal. It can be a gas medium-based device, a solid medium-based device, such as a xenon lamp, a laser diode, etc., and converts the initial power into light, typically a high energy level optical pulse.

[0031] The optical amplifying device is used to amplify the optical pulse signal output from the electrical-optical conversion device. It may be an optical amplifying crystal, an optical amplifying optical fiber, etc., and the optical pulse signal is compressed and amplified, and then output by an active or passive Q modulation method. In the embodiment of the present invention, an optical amplifying crystal is used as an example for explanation, but the present invention is not limited thereto.

[0032] The optical coupler shapes the optical pulse signal output from the optical amplifying device, or directly spreads it naturally into a specific spot shape, generally spreads it into multiple spots, forms a large-area spot array, and outputs it through spatial coupling or optical fiber coupling. The optical coupler can be an array optical fiber beam, an optical diffraction spectroscopic element, a lens, etc.

[0033] The photoelectric semiconductor structure is a multi-cell multi-gate level structure, based on photoelectric effect material, the photoelectric effect material can be silicon material, gallium arsenide, silicon carbide, gallium nitride and other materials, the array light pulse output from the optical coupling device is irradiated onto the photoelectric effect material, and a large area and multiple junction depth photon-induced carriers are generated in multiple photoelectric effect regions, with a certain concentration, to directly achieve a photon-induced linear amplification conduction mode.

[0034] A multi-layer doped structure is made on the photoelectric effect material to form a number of NPN structures and PNP structures, also called PNPN structure. Unlike traditional power semiconductor devices, the NPN structures and PNP structures in the multi-layer doped structure do not have an electrically contacted base. The array light pulse signal output from the optical coupling device coupling is directly irradiated on the P region and N region of the NPN structure and PNP structure, and directly performs rapid amplification in the corresponding regions. This process can be described as a photon-induced linear amplification conduction mode. During the process of the light pulse gradually disappearing, under the action of the external electric field, the photon-induced carriers cooperate with the established positive feedback mechanism to maintain the device conduction, and the photon-induced carriers further diffuse. After the light pulse completely disappears, the carriers directly generated by the light disappear, and under the action of the electric field, the established positive feedback mechanism transports the carriers to the surrounding area, forming a large-area complete conduction, the amplification factor is maintained, and the conduction resistance is further reduced. This process can be described as an electric field induced nonlinear amplification conduction mode. The whole process goes through an early photon-induced linear amplified conduction mode, a late field-induced nonlinear amplified conduction mode and a middle composite amplified conduction mode.

[0035] As shown in FIG. 2, the working process of the high power repetition rate solid-state switch of this embodiment is specifically as follows: The power supply is converted into high voltage, high current pulses, An electrical-optical conversion device converts electrical power into an optical pulse signal; amplifying the optical pulse signal with an optical amplifying device to generate amplified optical power; The amplified light is coupled and output by an optical coupler device to irradiate a photoelectric effect material, generate photon-induced carriers with a high initial concentration, and convert the optical power into electrical power; The photon-induced carriers in the PNPN structure can be transformed into a photon-induced linearly amplified conduction mode and / or an electric field-induced linearly amplified conduction mode, resulting in higher power.

[0036] The high-power repetition rate solid-state switch of this embodiment can realize a completely new working mechanism.

[0037] At the beginning of switch conduction, in the high current change rate (di / dt) stage, the photon-induced linear amplification conduction mode: based on the basis of the previous stage of optical amplification, the light pulse directly irradiates the photoelectric effect material, generating a rapid photoelectric effect, generating a large number of uniformly distributed photon-induced carriers, and entering the photon-induced linear amplification conduction mode.

[0038] In the later stage of switch conduction, the high-current continuous conduction stage, the electric field-induced nonlinear mode: based on the existing photon-induced carrier distribution, under the action of a high electric field, it rapidly diffuses and amplifies, conducts uniformly over a large area, and enters the electric field-induced nonlinear amplification conduction mode.

[0039] During the intermediate period of switch conduction, the photon-induced linear amplification conduction mode and the electric field-induced nonlinear amplification conduction mode cooperate to provide the switch with a higher power amplification factor.

[0040] The high power repetition rate solid-state switch proposed by the embodiment of the present invention has the following characteristics as shown in Table 1, when compared with existing switch devices. [Table 1] Note: In Table 1, "+" indicates that the property is present, and "-" indicates that the property is not present or is limited.

[0041] As can be seen from Table 1, the high-power repetition rate solid-state switch proposed in the embodiment of the present invention not only has the advantages of photoelectric isolation and high speed of the photoconductive switch, but also has the advantages of the SGTO switch, such as high charge transfer and large current, so that it can be used in a variety of applications, such as partially replacing traditional gas thyratrons in accelerators, partially replacing gas switches in pulse power devices, partially replacing photoconductive switches in the field of special power supplies, replacing traditional MOSFET series switches in the laser device pukel boxes, and high-power switches with high current change rates (di / dt) for electromagnetic radiation, electromagnetic welding, etc.

[0042] <Example 2> As shown in FIG. 3, this embodiment takes a laser diode, a microchip amplifier device, and a DOE+ lens as examples to describe the working process of the high power repetition rate solid-state switch presented in the above embodiment 1: The amplified power is input to a laser diode, which outputs a laser pulse signal. The laser pulse signal is amplified by a microchip amplifier device, then dispersed by a DOE device (optical diffraction spectroscopy device), amplified by a lens, and output as a uniform multi-point light (or array light). Multi-point light directly illuminates the photoelectric semiconductor structure over a large area, directly obtains a rapid photoelectric effect, and generates initial high photon-induced carriers in the photoelectric effect material, so that the switch device enters the initial conduction state, that is, the photon-induced linear amplification conduction mode; when the light pulse gradually disappears, the photon-induced carriers and the established positive feedback mechanism act together under the load of the electric field, so that the device maintains conduction, and the photon-induced carriers further diffuse, and the switch device enters the mid-conduction state; at this time, the photon-induced linear amplification conduction and the electric field-induced nonlinear amplification conduction act together, that is, the composite amplification conduction mode; after the light pulse completely disappears, the carriers directly generated by the light disappear, and the established positive feedback mechanism, under the action of the electric field, transports the carriers to the surrounding area, forming a large-area complete conduction, and the switch enters the late conduction state, that is, the electric field-induced nonlinear amplification conduction state.

[0043] <Example 3> As shown in FIG. 4, this embodiment takes a xenon lamp, a YAG crystal amplifying device and an optical fiber array as examples to describe the working process of the high power repetition rate solid-state switch proposed in the above embodiment 1: The amplified power is input to a xenon lamp, which outputs a laser pulse signal. The laser pulse signal is amplified by the YAG crystal amplifying device, and then the optical fiber array is split and multi-point coupled and amplified to output, Multi-point light directly illuminates the photoelectric semiconductor structure over a large area, directly obtains a rapid photoelectric effect, and an initial high photon-induced carrier is generated in the photoelectric effect material, and the switch device enters an initial conduction state, that is, a photon-induced linear amplification conduction mode. When the light pulse gradually disappears, the photon-induced carriers and the established positive feedback mechanism cooperate under the load of the electric field, the device maintains conduction, and the photon-induced carriers further diffuse, and the switch device enters a mid-conduction state, at this time the photon-induced linear amplification conduction and the electric field-induced nonlinear amplification conduction cooperate, that is, a composite amplification conduction mode. After the light pulse completely disappears, the carriers directly generated by the light disappear, and under the action of the electric field, the established positive feedback mechanism transports the carriers to the surrounding area, and a complete conduction is formed over a large area, and the switch enters a late conduction state, that is, an electric field-induced nonlinear amplification conduction state.

[0044] <Example 4> In this example, the high-power repetition rate solid-state switch presented in Example 1 above is tested, and typical parameter test results are shown in FIGS.

[0045] Figure 5 shows the test results of a high-power repetition rate solid-state switch when the diameter of the photoelectric semiconductor structure is about 12mm, where the dotted line is the current waveform after electrical amplification (cathodic test) in A, the solid line is the voltage waveform loaded by the switch (anodic test) in V, and the abscissa is time in ns. As can be seen from the attached drawing: The high power repetition rate solid-state switch of this embodiment was tested on an approximately 12 mm diameter structure with typical parameters, reaching approximately 8 kA current, 18 ns current leading edge (including circuit inductance, etc.), output current change rate (di / dt) of over 400 kA / μs, and single device peak power greater than 40 MW (peak current approximately 8.11 kA, peak voltage approximately 5.15 kV, peak power approximately 41.77 MW, as shown in FIG. 5).

[0046] Figure 6 shows the test results of another high-power repetition rate solid-state switch when the diameter of the photoelectric semiconductor structure is about 12mm, where the dotted line is the current waveform after electrical amplification (cathodic test) in A, the solid line is the voltage waveform loaded by the switch (cathodic test) in V, and the abscissa is time in μs. As can be seen from the attached drawing: The high power repetition rate solid-state switch of this embodiment has been tested on a 12 mm diameter structure with typical parameters of approximately 4.43 kA current, 36.7 ns current leading edge, output current rate of change (di / dt) of over 120 kA / μs (subject to test circuit limitations), and peak power of over 20 MW (peak current of approximately 4.43 kA, peak voltage of 4.65 kV, peak power of approximately 20.60 MW, as shown in FIG. 6), and pulse width of 5 μs.

[0047] Figure 7 shows the test results of a high-power repetition rate solid-state switch when the diameter of the photoelectric semiconductor structure is about 38mm, where the dotted line is the current waveform after electrical amplification (cathodic test) in A, the solid line is the voltage waveform loaded by the switch (anodic test) in V, and the abscissa is time in μs. As can be seen from the attached drawing: The high power repetition rate solid-state switch of this embodiment has been tested on a 38 mm diameter structure with typical parameters of approximately 43 kA current, 1.12 μs current leading edge, output current rate of change (di / dt) of over 38 kA / μs (subject to test circuit limitations), and peak power of over 200 MW (peak current of approximately 43.4 kA, peak voltage of approximately 5.11 kV, peak power of approximately 221.77 MW, as shown in FIG. 7), with a pulse width of 16 μs.

[0048] The above-mentioned specific embodiments are to explain the objectives, technical solutions and beneficial effects of the present invention in more detail. The above-mentioned contents are only specific embodiments of the present invention and do not limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made without departing from the spirit and principles of the present invention shall all be included within the protection scope of the present invention.

Claims

1. The optical amplifier comprises an optical pulse unit, an optical amplifying device, an optical coupling device and an optoelectronic semiconductor structure; The photoelectric semiconductor structure is based on a photoelectric effect material, and has a multi-layer doped structure formed in the photoelectric effect material, forming a plurality of PNP structures and NPN structures, each of the PNP structures and the NPN structures having no base in electrical contact; the optical pulse unit is used for outputting an optical pulse signal to the optical amplifying device; the optical amplification device is used to amplify the optical pulse signal; The optical coupling device is used for shaping and spreading the amplified optical pulse signal into an array optical pulse signal, and outputting the array optical pulse signal to an optoelectronic semiconductor structure; The photoelectric effect material generates photon-induced carriers under irradiation of an optical pulse signal, and the photon-induced carriers perform photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification in the multi-layer doped structure to realize high-power amplification conduction; Specifically, the photon-induced carriers can be used to perform photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification in the multi-layer doped structure. At the beginning of switch conduction, photon-induced linear mode amplification conduction is performed; During the middle period of switch conduction, a composite amplified conduction of photon-induced linear mode and electric field-induced nonlinear mode is implemented. In the later stage of switch conduction, electric field induced nonlinear mode amplified conduction is implemented. The photon-induced linear mode amplification conduction is achieved by directly irradiating an array light pulse signal onto an N region of a PNP structure and a P region of an NPN structure, and performing high-speed amplification conduction on the corresponding regions; The high-power repetition-rate solid-state switch with combined control of optical and electrical amplification is characterized in that the electric-field-induced nonlinear mode amplification conduction is a rapid diffusion conduction under the action of an electric field due to the established positive feedback mechanism.

2. the optical pulse unit includes a pulse power supply and an electrical-optical conversion device; The pulsed power supply is used to convert the input power to a high output power; 2. The high-power repetition rate solid-state switch with composite control of optical amplification and electrical amplification according to claim 1, wherein the electrical-optical conversion device converts a high-power power source into an optical pulse signal.

3. 3. The high-power repetition-rate solid-state switch with composite control of optical amplification and electrical amplification as claimed in claim 2, wherein the pulse power supply is a laser power supply that can be used in a laser device.

4. The high-power repetition-rate solid-state switch with combined control of optical amplification and electrical amplification as claimed in claim 2, wherein said electrical-optical conversion device is a gas medium device or a solid medium device.

5. The high-power repetition-rate solid-state switch with combined control of optical amplification and electrical amplification as claimed in claim 2, wherein said electrical-optical conversion device is a xenon lamp or a laser diode.

6. 2. The high-power repetition rate solid-state switch with combined control of optical amplification and electrical amplification according to claim 1, wherein the optical amplification device is an optical amplification crystal or an optical amplification optical fiber.

7. The high-power repetition rate solid-state switch with combined control of optical amplification and electrical amplification as claimed in claim 1, wherein the optical coupling device is an optical diffraction spectroscopic element, an optical lens or an array optical fiber beam.

8. 2. The high-power repetition-rate solid-state switch with combined control of optical amplification and electrical amplification as claimed in claim 1, wherein the photoelectric effect material is silicon, gallium arsenide, silicon carbide or gallium nitride.

9. A working method based on a high-power repetition rate solid-state switch with combined control of optical and electrical amplification according to any one of claims 1 to 8, comprising: converting the supplied power into an optical pulse signal and outputting the optical pulse signal; amplifying an optical pulse signal; shaping the amplified optical pulse signal and spreading it into an array optical pulse signal; Irradiating an array of optical pulse signals onto a photoelectric effect material to generate photon-induced carriers; and wherein the photon-induced carriers perform photon-induced linear mode amplification and / or electric field-induced nonlinear mode amplification in the multi-layer doped structure to achieve high power amplification conduction.

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