Component processing method, component processing system, component joining method, electronic component, and processing billing system

Abstract

To provide a member processing method that can perform processing accurately with less man hours and can easily change a pattern to be formed, and a system for the same.SOLUTION: A member processing method comprises: an applying step of applying a coating solution containing photoreactive particles 20 onto a surface to be processed of a member 1 to form a coated film 2; a particle eccentrically locating step of converging the photoreactive particles 20 in the coated film 2 toward the surface to be processed of the member 1; and a light irradiating step of making light irradiating means 4 irradiate the photoreactive particles 20 in the coated film 2 with light, which makes the photoreactive particles 20 irradiated with light which are in the vicinity of the surface to be processed of the member 1 process the surface to be processed of the member 1. A member processing system comprises a member processing device 10a which comprises: electrical filed generating means 3 that is particle eccentrically-locating means that converges the photoreactive particles 20 in the coated film 2 formed on the surface to be processed of the member 1 toward the surface to be processed of the member 1; and light irradiating means 4 that irradiates the photoreactive particles 20 in the coated film 2 with light.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a component processing method, a component processing system, and a component joining method using the same.The present invention also relates to an electronic component.The present invention also relates to a component billing system. [Background technology]

[0002] Conventionally, in microfabrication of semiconductor devices and the like, a pattern is formed on a substrate using photoresist or the like, the substrate is processed by dry etching or the like, and then the photoresist is removed (for example, Patent Documents 1 to 3). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-109586 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-147215 [Patent Document 3] Japanese Patent Application Publication No. 5-136047 Summary of the Invention [Problem to be solved by the invention]

[0004] However, conventional processing methods using photoresist have the problem of requiring many processing steps. In recent years, semiconductor elements have become more complex after assembly due to the combination of image elements, memory, logic, etc., which increases the process burden. Therefore, a new 3D unevenness formation technology that can reduce the process burden was required.

[0005] Furthermore, conventional processing methods using photoresist require multiple masks to form a desired pattern on a substrate, making it difficult to accommodate high-mix, low-volume production.

[0006] The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a method and system for processing components that allows for accurate processing with fewer steps and allows for easy changes to the pattern to be formed. Another object of the present invention is to provide a method for joining components and electronic components that utilize the processing method of the present invention. Another object of the present invention is to provide a processing billing system. [Means for solving the problem]

[0007] The present inventors have conducted extensive research to solve the above problems, and as a result have found that the following invention meets the above object, thereby completing the present invention.

[0008] That is, the present invention relates to the following inventions. <1> A component processing method comprising: a coating step of applying a coating solution containing photoreactive particles to a work surface of a component to form a coating film; a particle concentration step of concentrating the photoreactive particles in the coating film toward the work surface of the component; and a light irradiation step of irradiating light onto the photoreactive particles in the coating film using a light irradiation means, wherein the work surface of the component is processed by the photoreactive particles near the work surface of the component that have been irradiated with the light. <2> the light irradiation means includes a light source and an optical shutter disposed between the light source and the coating film, and in the light irradiation step, a light irradiation control means controls the optical shutter to selectively transmit light from the light source to the coating film; <1> The method described below. <3> the particle uneven distribution step is a step of generating an electric field by an electric field generating means including a first electrode arranged on the coating film and a voltage applying means, and concentrating the photoreactive particles in the coating film on the processed surface side of the member; <1> or <2> The method described below. <4> the electric field generating means includes a second electrode disposed opposite the first electrode across the member; <3> The method described below. <5> the first electrode includes a plurality of fine electrodes, the electric field generating means includes the first electrode, the voltage applying means, and an electric field controlling means, and in the particle uneven distribution step, the fine electrodes are controlled by the electric field controlling means to selectively apply a voltage; <3> or <4> The method described below. <6> The photoreactive particles are core-shell particles, and the shell is a fullerene derivative. <1> from <5> A method according to any one of the preceding claims. <7> The coating solution includes water. <1> from <6> A method according to any one of the preceding claims. <8> the light includes ultraviolet light, <1> from <7> A method according to any one of the preceding claims.

[0009] <9> A component processing system having a component processing device equipped with a particle concentration means for concentrating photoreactive particles in a coating film formed on a work surface of the component toward the work surface side of the component, and a light irradiation means for irradiating light onto the photoreactive particles in the coating film. <10> a light irradiation control means for controlling the light of the light irradiation means, the light irradiation means including a light source and an optical shutter disposed between the light source and the coating film, and the light irradiation control means for controlling a light transmission area of ​​the optical shutter; <9> The system described in <11> the particle uneven distribution means includes a first electrode disposed on a coating film formed on the work surface of the member, and a voltage application means, and is an electric field generation means for generating an electric field for controlling the positions of the photoreactive particles in the coating film; <9> or <10> The system described in <12> the electric field generating means includes a second electrode disposed opposite the first electrode across the member; <11> The system described in <13> the first electrode includes a plurality of microelectrodes, and the electric field generating means includes electric field control means disposed between the first electrode and the voltage applying means, each of which controls electrical connection between the plurality of microelectrodes and the voltage applying means; <11> or <12> The system described in

[0010] <14> A method for joining a first member and a second member, <1> from <8> forming a recess at a joint portion of the first member with the second member by any one of the methods described above; <1> from <8> forming a convex portion that can fit into the concave portion at a joint portion of the second member with the first member by any one of the methods described above; and fitting the convex portion of the second member into the concave portion of the first member. <15> An electronic component having multiple components, comprising a first component having a joint with a recess formed therein, and a second component having a joint with a protrusion formed therein that can fit into the recess, wherein the protrusion of the second component is fitted into the recess of the first component, thereby electrically connecting the components.

[0011] <16> A processing charging system comprising: a terminal equipped with pattern information acquisition means for a user to access a pattern database having processing pattern information corresponding to processing to be performed on a member and acquire the specified processing pattern information; and processing means connected to the terminal, wherein the processing means processes the member based on the processing pattern information of the terminal, and a fixed or different fee is set for each piece of processing pattern information, and the processing charging system charges the user a fee according to the processing pattern information acquired by the terminal. <17> the processing means is a component processing device including a particle concentration means for concentrating photoreactive particles in a coating film formed on the processing surface of the component toward the processing surface side of the component, and a light irradiation means for irradiating the photoreactive particles in the coating film with light, the terminal is used as a light irradiation control means for controlling the light irradiation means, and the processing pattern information is used as information used in the light irradiation control means to control the light irradiation means; <16> A billing system for processing as described above. <18> the light irradiation means has a light source and an optical shutter disposed between the light source and the coating film, and the processing pattern information is information on transmission and non-transmission of the optical shutter; <17> A billing system for processing as described above. [Effects of the Invention]

[0012] According to the present invention, a method and system for processing components that allows for accurate processing with fewer steps and allows for easy changes to the pattern to be formed are provided. Also provided are a method for joining components and an electronic component that utilizes the processing method of the present invention. Furthermore, a processing billing system is provided. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a schematic diagram of a member processing system according to the present invention; [Figure 2] 1A to 1C are diagrams for explaining a member processing method according to the present invention. [Figure 3] 10A and 10B are diagrams showing the movement of photoreactive particles and the direction of the electric field to be generated in the particle uneven distribution step. [Figure 4] 10A and 10B are diagrams showing the movement of photoreactive particles in a light irradiation step. [Figure 5] FIG. 1 is a schematic diagram of a component processing system according to another embodiment of the present invention. [Figure 6] FIG. 1 is a schematic diagram of a component processing system according to another embodiment of the present invention. [Figure 7] 10A and 10B are diagrams showing the movement of photoreactive particles and the direction of the electric field to be generated in the particle uneven distribution step. [Figure 8] 10A and 10B are diagrams showing the movement of photoreactive particles in a light irradiation step. [Figure 9] 10A and 10B are diagrams showing the movement of photoreactive particles in a light irradiation step. [Figure 10] 1 is a schematic diagram of a billing system according to the present invention; [Figure 11] 3 is an operation sequence of the billing system according to the present invention. [Figure 12] 1A to 1C are diagrams for explaining a joining method according to the present invention. [Figure 13] 1 is a schematic diagram of an electronic component obtained by a joining method according to the present invention. [Figure 14] 1 is a schematic diagram of an electronic component obtained by a joining method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] The following describes in detail an embodiment of the present invention, but the following description of the constituent elements is one example (typical example) of an embodiment of the present invention, and the present invention is not limited to the following content unless the gist of the present invention is changed. Note that when the expression "to" is used in this specification, it is used as an expression including the numerical values ​​or physical property values ​​before and after it.

[0015] <Material processing method> The present invention relates to a component processing method (hereinafter, sometimes referred to as the "component processing method of the present invention") that includes a coating step of applying a coating solution containing photoreactive particles to a work surface of a component to form a coating film, a particle concentration step of concentrating the photoreactive particles in the coating film toward the work surface of the component, and a light irradiation step of irradiating light onto the photoreactive particles in the coating film by a light irradiation means, and processes the work surface of the component by the photoreactive particles near the work surface of the component that have been irradiated with the light.

[0016] One of the features of the component processing method of the present invention is the use of light to process the workpiece surface with photoreactive particles. The inventors discovered that the workpiece surface can be processed using photoreactive particles, such as hydroxylated fullerenes, concentrated near the workpiece surface. It is believed that light irradiation promotes the catalytic activity of the photoreactive particles, causing a chemical reaction between the photoreactive particles unevenly distributed (concentrated) on the workpiece side and the workpiece, thereby processing the workpiece, or that light irradiation modifies the photoreactive particles, thereby processing the workpiece. By using light to process the workpiece surface with photoreactive particles in this way, there is no need to use photoresist, reducing the number of steps and enabling more precise processing. Furthermore, by controlling the light to correspond to the desired pattern, different patterns can be easily processed.

[0017] The inventors have also discovered that by using an electric field, it is possible to cause photoreactive particles such as hydroxylated fullerenes to be unevenly distributed (concentrated) near the area of ​​the work surface of a component that is to be processed (removed). By using light and an electric field, it is possible to more easily change the processing pattern, and to process into the desired pattern.

[0018] <Material processing system> The present invention also relates to a component processing system (hereinafter, sometimes referred to as "the component processing system of the present invention") having a component processing device equipped with a particle concentration means for concentrating photoreactive particles in a coating film formed on the processed surface of the component on the processed surface of the component, and a light irradiation means for irradiating light onto the photoreactive particles in the coating film.

[0019] The component processing method of the present invention can be carried out by using the component processing system of the present invention. The component processing system of the present invention can process components without using photoresist, and the desired processing pattern can be easily changed.

[0020] Hereinafter, the processing method and system of the present invention will be described with reference to the drawings.

[0021] <Component Processing System 100A and Component Processing Method Using the Same> Fig. 1 is a schematic diagram of a component processing system 100A according to the present invention. Fig. 2 is a diagram for explaining a component processing method according to the present invention (hereinafter referred to as "component processing method A") that uses the component processing system 100A. Fig. 3 is a diagram showing the movement of photoreactive particles and the direction of the generated electric field in the particle uneven distribution step. Fig. 4 is a diagram showing the movement of photoreactive particles in the light irradiation step.

[0022] <Component Processing System 100A> The component processing system 100A shown in Fig. 1 includes a component processing device 10a equipped with an electric field generating means 3 and a light irradiating means 4, and a light irradiation control means 12. As shown in Fig. 2, after a coating step is performed to form a coating film 2 containing photoreactive particles 20 on the surface of the component 1 to be processed, the component processing system 100A is used to perform a particle uneven distribution step and a light irradiation step, thereby processing the component 1.

[0023] [Electric field generating means 3] The electric field generating means 3 includes a first electrode 30 and a voltage applying means 34. The electric field generating means 3 is a particle uneven distribution means, and generates an electric field for controlling the positions of the photoreactive particles 20 in the coating film 2 formed on the work surface of the member 1.

[0024] (First electrode 30) The first electrode 30 is a transparent electrode disposed on the coating film 2 formed on the workpiece surface of the member 1. The first electrode 30 is only required to be transparent enough to transmit light from the light irradiation means 4 disposed vertically above the first electrode 30 to the coating film 2. ITO or the like can be used as the first electrode 30. As will be described later, the first electrode 30 may have a plurality of fine electrodes. The first electrode 30 may also be configured by miniaturizing metal wiring, for example, by providing areas where metal wiring is arranged and areas where it is not arranged. For example, the first electrode 30 may be configured such that the areas where metal wiring is arranged and areas where it is not arranged are configured in a mesh-like pattern, or the metal wiring may be narrowed in line width and arranged in a stripe pattern.

[0025] (Voltage application means 34) The voltage application means 34 may be any means capable of electrically connecting the member 1 and the first electrode 30 and applying a voltage between the member 1 and the first electrode 30, and a general power supply such as a DC power supply, an AC power supply, or a pulse power supply may be used. The power supply is preferably selected taking into consideration the machining speed, machining accuracy, etc. The voltage application means 34 applies a voltage between the member 1 and the first electrode 30, thereby generating an electric field between the member 1 and the first electrode 30.

[0026] [Light irradiation means 4] The light irradiation means 4 includes a light source 40 and an optical shutter 42. The light irradiation means 4 irradiates the photoreactive particles 20 in the coating film 2 formed on the surface of the member 1 to be processed with light.

[0027] (Light source 40) The light source 40 is a planar light source that is installed vertically above the workpiece surface of the member 1 and is capable of emitting light including ultraviolet light (wavelength 10 to 400 nm). Examples of light sources that can irradiate light in this wavelength range include laser light sources, excimer lamps, UV-LEDs, and low-pressure mercury lamps. For laser light sources, the irradiation intensity is preferably 0.8 mW to 1.3 mW, and more preferably around 1 mW (e.g., 0.9 mW to 1.1 mW). For other light sources, the irradiation intensity is preferably 70 mW to 120 mW, and more preferably around 100 mW (e.g., 90 mW to 110 mW).

[0028] The wavelength of the light emitted from the light source 40 is not limited to the ultraviolet region, and any wavelength can be selected as long as it has good sensitivity to the photoreactive particles 20. For example, the light emitted from the light source 40 may have a wavelength of 10 nm to 780 nm. The use of light in the ultraviolet region is preferable in terms of processing speed, etc.

[0029] (Optical shutter 42) The optical shutter 42 transmits only a portion of the light emitted from the light source 40 that corresponds to the shape to be machined. A liquid crystal optical shutter or the like can be used as the optical shutter 42. The light transmission can be controlled by controlling the voltage across the liquid crystal. In the component processing system 100A, the optical shutter 42 is disposed between the light source 40 and the coating film 2. The optical shutter 42 is preferably disposed 0.01 mm to 1.00 mm away from the coating film 2. If the distance is less than 0.01 mm, the first electrode 30 must be made thinner, which may reduce the mechanical strength of the first electrode 30. If the distance is greater than 1.00 mm, the increased distance between the coating film 2 and the optical shutter 42 may cause light diffusion, potentially hindering high-precision processing.

[0030] [Light irradiation control means 12] The light irradiation control means 12 is a means for controlling the pattern of light irradiated by the light irradiation means 4. In the component processing system 100A, the light irradiation control means 12 selects and controls the light transmission area of ​​the optical shutter 42. A terminal such as a computer can be used as the light irradiation control means 12. Information on the desired pattern is read into the terminal from processing patterns saved (stored) in the computer or from a pattern database on the Internet or a server. Next, processing pattern information that controls the liquid crystal or the like so that the parts corresponding to the pattern become light transmission areas is sent from the terminal to the optical shutter 42, and the light transmission area is controlled.

[0031] <Component processing method A> The member processing method A shown in FIG. 2 includes a coating step, a particle uneven distribution step, and a light irradiation step.

[0032] [Coating process] The coating step is a step of applying a coating solution containing photoreactive particles 20 to the surface to be processed of the member 1 to form a coating film 2 (see (a) and (b) of FIG. 2).

[0033] (Component 1) The component processing system 100A uses a component 1 to be processed as an electrode facing the first electrode 30. There are no particular limitations on the component 1, as long as it is a material that allows a voltage to be applied between the component 1 and the first electrode 30. Specifically, components (substrates, etc.) made of conductive materials such as simple metals such as gold, silver, copper, aluminum, and iron, alloys thereof, metal materials obtained by adding additives to the simple metals and alloys, conductive resins, and conductive ceramics can be used. Furthermore, components (substrates, etc.) made of semiconductor materials such as silicon substrates, silicon dioxide (SiC), silicon carbide (SiO2), gallium nitride (GaN), diamond, and sapphire can be used. A preferred component 1 is a metal substrate such as copper (Cu).

[0034] (Photoreactive particles 20) The photoreactive particles 20 are particles that are reactive with the component 1 when irradiated with light, and / or particles that have the property of being modified by light into particles that can remove the component 1. The photoreactive particles 20 also have a surface charge, that is, their surfaces are positively or negatively charged. As a result, by controlling the direction of the electric field, the photoreactive particles 20 are unevenly distributed near the surface of the component 1 to be processed.

[0035] Examples of photoreactive particles 20 with a positive surface charge include donor atoms or molecules such as TTF (tetrathiafulvalene) or alkali metals, particles having these atoms or molecules on their surfaces, etc. Examples of photoreactive particles 20 with a negative surface charge include fullerene derivatives and particles having fullerene derivatives on their surfaces.

[0036] For example, for a member 1 that is a metal substrate such as copper (Cu), hydroxylated fullerene or core-shell particles having hydroxylated fullerene as a shell, which will be described later, are suitable as the photoreactive particles 20.

[0037] The photoreactive particles 20 are preferably core-shell particles. Core-shell particles are core particles coated with a particulate shell, or core particles coated with a layered shell. The particle size of the core can be about 0.05 to 1 μm. The shell is a particle or layer of about 1 to 10 nm.

[0038] The core particle can be a hard particle such as silica, silicon dioxide, or diamond. The shell can be a fullerene derivative. Examples of fullerene derivatives include fullerene C60, fullerene C70, hydroxylated fullerene C60, hydroxylated fullerene C70, hydrogenated fullerene C60, hydrogenated fullerene C70, fullerene soot, and onion-like carbon. Among these fullerene derivatives, hydroxylated fullerene C60 is more preferred because it is easily available and has high dispersibility in water.

[0039] A coating solution containing core-shell particles whose shell is a hydroxide fullerene can be easily obtained by, for example, mixing an aqueous dispersion of a material for forming the core particles, such as diamond or silica, with an aqueous solution of hydroxide fullerene. The temperature (mixing temperature) when adsorbing the shell onto the core particles is, for example, typically between -20°C and 80°C, preferably between 0°C and 60°C, more preferably between 5°C and 40°C, and particularly preferably between 10°C and 35°C. The time (mixing time) when adsorbing the shell onto the core particles is, for example, typically between 0.05 hours and 24 hours, preferably between 0.1 hours and 12 hours, and more preferably between 0.5 hours and 6 hours.

[0040] Furthermore, when mixing the aqueous dispersion in which the material to be used as the core particles is dispersed with the aqueous solution of hydroxylated fullerene, a pH adjuster may be used to adjust the pH. Examples of pH adjusters include basic substances such as sodium hydroxide and calcium hydroxide, and acidic substances such as citric acid. A surfactant or a dispersant may also be mixed. When using core-shell particles coated with a fullerene derivative, the pH of the coating solution is preferably alkaline to improve dispersibility. Specifically, the pH is preferably 10 to 12. A surfactant or a dispersant may also be mixed.

[0041] The obtained solution may be used as a coating solution as is. Furthermore, if it is desired to concentrate the photoreactive particles 20 (core-shell particles), the photoreactive particles 20 can be separated by changing the alkaline state to an acidic state. These concentrated photoreactive particles can be used as a coating solution by making them alkaline again, in which case a coating solution with a higher concentration of photoreactive particles can be prepared.

[0042] (Coating solution) The coating solution is a solution in which the photoreactive particles 20 are dissolved or dispersed in a solvent. Examples of solvents contained in the coating solution include water, organic solvents, and alcohol. These solvents may be used alone or in combination of two or more. It is preferable to select a coating solvent that does not easily absorb the wavelength of the light source to be used.

[0043] The concentration of photoreactive particles in the coating solution is preferably 5% by mass or more and 15% by mass or less. If the amount of photoreactive particles is too small, processing may be difficult. If the amount of photoreactive particles is too large, it may be cost-inefficient and the product price may increase.

[0044] (Application method) Examples of methods for forming the coating film 2 on the work surface of the member 1 include spraying, inkjet, slit coating, blade coating, spin coating, and dip coating. In particular, spin coating is preferred because it is less likely to produce bubbles in the coating film 2.

[0045] (Coating film 2) The coating film 2 is a film containing photoreactive particles 20 and a solvent 22. The mass ratio of the photoreactive particles 20 to the coating film 2 is 5 to 15 mass %. If the amount of photoreactive particles 20 is too small relative to the amount of the coating film 2, processing may be difficult. Furthermore, if the amount of photoreactive particles 20 is too large relative to the amount of the coating film 2, it may be disadvantageous in terms of cost, and the price of the product may increase.

[0046] The thickness of the coating film 2 is preferably 2 μm to 15 μm. If the thickness of the coating film 2 is too thick, the coating film may flow outward, or it may be difficult to maintain parallelism between the various components, resulting in reduced processing accuracy. Furthermore, if the thickness of the coating film 2 is too thin, the absolute amount of photoreactive particles will decrease, increasing the frequency of the coating process and potentially reducing productivity. Therefore, the optimum thickness of the coating film 2 is considered to be approximately 10 μm, with increasing thicknesses being more preferable in the order of 5 μm or more, 7 μm or more, and 9 μm or more. Furthermore, the upper limit is preferably 13 μm or less, followed by 12 μm or less, and then 11 μm or less.

[0047] After the coating step, a first electrode 30 is placed on the coating film 2 formed on the surface to be processed of the member 1, and a particle uneven distribution step (electric field generation step) is carried out (see FIG. 2(c)).

[0048] [Particle uneven distribution process] The particle concentration process is a process in which an electric field is generated by an electric field generating means 3 including a first electrode arranged on the coating film 2 and a voltage application means 34, and the photoreactive particles 20 in the coating film 2 are concentrated on the processed surface of the member 1 (see (c) to (d) of Figure 2 and Figure 3).

[0049] The first electrode 30 and the member 1 are each connected to a voltage application means 34, and by applying a voltage, an electric field can be generated between the first electrode 30 and the member 1. The applied voltage can be 120 to 1000V.

[0050] The electric field must be generated so that the photoreactive particles 20 in the coating film 2 move and concentrate toward the component 1, and the direction of the generated electric field is determined according to the surface charge of the photoreactive particles 20. As shown in FIG. 3(a), when photoreactive particles 20p with a positive surface charge are used as the photoreactive particles 20, a voltage is applied so that an electric field is generated in the direction from the first electrode 30 toward the component 1. This makes the component 1 side negative, and the photoreactive particles 20p move toward the component 1. Furthermore, as shown in FIG. 3(b), when photoreactive particles 20n with a negative surface charge are used as the photoreactive particles 20, a voltage is applied so that an electric field is generated in the direction from the component 1 toward the first electrode 30. This makes the component 1 side positive, and the photoreactive particles 20n move toward the component 1.

[0051] [Light irradiation process] The light irradiation step is a step in which light is irradiated onto the coating film 2 formed on the workpiece surface of the component 1 by a light irradiation means 4 arranged at a position vertically above the workpiece surface of the component 1 (see (e) to (f) of Figure 2 and Figure 4). In the light irradiation step of component processing method A, while maintaining the electric field applied by the electric field generating means 3, the light irradiation control means 12 controls the light shutter 42 to selectively transmit light L from the light source 40 through the coating film 2 so as to correspond to the desired processing pattern. As a result, the light L is irradiated only onto the photoreactive particles 20 in the portion of the desired processing pattern. By irradiating the light L onto the photoreactive particles 20 concentrated on the workpiece surface of the component 1 by the electric field, the photoreactive particles 20 can remove the workpiece surface of the component 1 and form the desired pattern.

[0052] The light irradiation time can be determined based on a relationship between the light irradiation time and the processing depth, etc., which has been previously measured. Alternatively, the light irradiation time may be determined by monitoring the processing depth, etc.

[0053] <Component Processing System 100B and Component Processing Method Using the Same> Figure 5 is a schematic diagram of a component processing system 100B according to the present invention. Component processing system 100B is the same as component processing system 100A except that it has electric field generation means 3b instead of electric field generation means 3. Therefore, corresponding parts are given the same reference numerals as in Figure 1 and their description will be omitted. Furthermore, a component processing method of the present invention that uses component processing system 100B (hereinafter referred to as "component processing method B") is the same as component processing method A except that in the particle uneven distribution step, electric field generation means 3b is used to generate an electric field instead of electric field generation means 3.

[0054] <Component Processing System 100B> 5 includes a component processing device 10b equipped with an electric field generating means 3b and a light irradiating means 4, and a light irradiation control means 12. After a coating step is performed to form a coating film 2 containing photoreactive particles 20 on the surface of a component 1b to be processed, the component processing system 100B is used to perform a particle uneven distribution step and a light irradiation step, thereby processing the component 1b.

[0055] The electric field generating means 3b includes a first electrode 30, a second electrode 32, and a voltage applying means 34. The electric field generating means 3b is a particle uneven distribution means, and like the electric field generating means 3, generates an electric field for controlling the position of the photoreactive particles 20 in the coating film 2 formed on the processing surface of the member 1b. The second electrode 32 is disposed so as to face the first electrode 30 across the member 1b. The first electrode 30 and the second electrode 32 are each connected to the voltage applying means 34, and an electric field can be generated between the first electrode 30 and the second electrode 32 by applying a voltage.

[0056] The second electrode 32 may be made of any conductive material. Specifically, it may be a single conductive material such as gold, silver, copper, aluminum, or iron, or a conductive material to which an additive has been added, or an alloy of a single conductive material with another material. Alternatively, it may be a conductive resin or a conductive ceramic, and a material suitable for the processing method may be selected as appropriate.

[0057] <Component processing method B> Since component processing system 100B applies a voltage between first and second electrodes 32 that face each other across component 1b, component 1b processed by component processing method B can be made of either a conductive or non-conductive material. Specifically, component 1b can be made of a conductive material, such as a metal material, conductive resin, or conductive ceramic, as well as a semiconductor material (e.g., a silicon substrate, silicon dioxide (SiC), silicon carbide (SiO), gallium nitride (GaN), diamond, or sapphire, similar to component 1. Furthermore, component 1b can be made of a non-conductive material, such as silica-based glass or sapphire-based glass.

[0058] In component processing method B, after the coating process, a first electrode 30 is placed on the coating film 2 formed on the processed surface of component 1b, and a second electrode 32 is placed opposite the first electrode 30 across component 1b, and a particle distribution process (electric field generation process) is performed.

[0059] In the component processing method B, the particle uneven distribution step is a step in which an electric field is generated by an electric field generating means 3b including a first electrode 30, a second electrode 32, and a voltage applying means 34, and the photoreactive particles 20 in the coating film 2 are moved to the component 1b side and concentrated therein. The voltage applied between the first electrode 30 and the second electrode 32 by the voltage applying means 34 can be 120 to 1000 V.

[0060] Furthermore, similarly to component processing method A, a voltage is applied so that the photoreactive particles 20 in the coating film 2 move toward the component 1b according to the surface charge of the photoreactive particles 20. When the surface charge of the photoreactive particles 20 is positive, a voltage is applied so that an electric field is generated in the direction from the first electrode 30 toward the second electrode 32. When the surface charge of the photoreactive particles 20 is negative, a voltage is applied so that an electric field is generated in the direction from the second electrode 32 toward the first electrode 30.

[0061] <Component Processing System 100C and Component Processing Method Using the Same> Figure 6 is a schematic diagram of component processing system 100C. Component processing system 100C is the same as component processing system 100A except that it has electric field generation means 3c instead of electric field generation means 3 and light irradiation means 4c (light source 40) instead of light irradiation means 4. Corresponding parts are given the same reference numerals as in Figure 1 and their description will be omitted. Furthermore, a component processing method of the present invention that uses component processing system 100C (hereinafter referred to as "component processing method C") is the same as component processing method A except that in the particle uneven distribution step, electric field generation means 3c is used to generate an electric field instead of electric field generation means 3, and in the light irradiation step, light is irradiated using light irradiation means 4c instead of light irradiation means 4.

[0062] <Component Processing System 100C> 6 includes a component processing device 10c equipped with an electric field generating means 3c and a light irradiating means 4c. After a coating step is performed to form a coating film 2 containing photoreactive particles 20 on the surface of a component 1 to be processed, the component processing system 100C is used to perform a particle uneven distribution step and a light irradiating step, thereby processing the component 1.

[0063] The electric field generating means 3c includes a first electrode 30c, a voltage applying means 34, and an electric field controlling means 36. The electric field generating means 3c is a particle uneven distribution means, and similar to the electric field generating means 3 and 3b, generates an electric field for controlling the positions of the photoreactive particles 20 in the coating film 2 formed on the processed surface of the member 1.

[0064] (First electrode 30c) The first electrode 30c is an electrode disposed on the coating film 2 formed on the surface to be processed of the member 1, and includes a plurality of fine electrodes 31. The first electrode 30c may be transparent enough to allow light to pass through to the coating film 2. The first electrode 30c may be formed by embedding fine ITO electrodes in a transparent substrate.

[0065] (electric field control means 36) The electric field control means 36 is disposed between the first electrode 30c and the voltage application means 34, and controls the electrical connection between each microelectrode 31 and the voltage application means 34. The electric field control means 36 controls the flow of current only through the microelectrodes 31 in the portions corresponding to the machining pattern, and applies voltage only between the microelectrodes 31 corresponding to the machining pattern and the member 1. For example, as described below, the electric field control means 36 can be controlled based on the machining pattern information transmitted from the electrode control means, using a terminal in which machining pattern information is stored as electrode control means.

[0066] <Component processing method C> In the member processing method C, after the coating step, a first electrode 30 is placed on the coating film 2 formed on the surface to be processed of the member 1, and a particle uneven distribution step (electric field generation step) and a light irradiation step are performed.

[0067] In component processing method C, the particle uneven distribution step is a step in which an electric field is generated by an electric field generating means 3c including a first electrode 30c, a voltage application means 34, and an electric field control means 36, causing the photoreactive particles 20 in the coating film 2 to migrate and concentrate toward the component 1 (see FIG. 7). At this time, the electric field control means 36 controls the electrical connections between the fine electrodes 31 constituting the first electrode 30c and the voltage application means 34, respectively, to achieve the desired processing pattern, and a voltage is selectively applied between the fine electrodes 31 and the component 1 in the portion corresponding to the desired processing pattern. As in component processing method A, the voltage is applied so that the photoreactive particles 20 in the coating film 2 migrate (are unevenly distributed, concentrated) toward the component 1 in accordance with the surface charge of the photoreactive particles 20. As a result, only the photoreactive particles in the portion corresponding to the desired processing pattern are concentrated on the processing surface of the component 1. The applied voltage can be 120 to 1000 V.

[0068] In component processing method C, the light irradiation step is a step of irradiating light L onto the coating film 2 formed on the work surface of component 1 using light irradiation means 4c positioned vertically above the work surface of component 1 (see FIG. 8). In component processing method C, voltage is applied only to the portion corresponding to the desired processing pattern, and only the photoreactive particles in the portion corresponding to the desired processing pattern are concentrated on the work surface. Therefore, even if light L is irradiated onto the entire work surface of component 1 using light source 40 without using optical shutter 42, the desired processing pattern can be achieved.

[0069] Furthermore, in component processing method C, during processing, a voltage can be applied to other micro-electrodes 31 around the micro-electrode 31 to which a voltage is being applied, or the application of voltage can be stopped, thereby performing complex processing on the component 1. For example, processing such as that shown in Figure 9 can also be performed. That is, by applying a voltage to the micro-electrodes 31 on both sides of the central micro-electrode 31 during processing, a recess with a deeper central portion can be formed in the component 1.

[0070] Although the member processing methods A to C have been described as methods in which the particle distribution process is performed after the light irradiation process, the order of the particle distribution process and the light irradiation process is not particularly limited. The particle distribution process may be performed after the light irradiation process. In this case, the particle distribution process is performed while maintaining the state in which the coating film is irradiated with light, and the member is processed. Alternatively, the particle distribution process and the light irradiation process may be performed simultaneously.

[0071] The component processing method of the present invention is suitable as a processing method for forming recesses and / or protrusions on the surface of a component to be processed. For example, the component processing method of the present invention can form recesses having a depth of about 1 to 100 nm or about 1 to 50 nm, or protrusions having a height of about 1 to 100 nm or about 1 to 50 nm, on the surface of a component to be processed. Specifically, the component processing method of the present invention can be used as a method for processing a substrate on which a semiconductor is mounted or a method for assembling a semiconductor IC.

[0072] It should be noted that, depending on the configuration of the component processing system of the present invention, a business model using a billing system can also be considered. For example, a billing system 200 using a component processing system having a component processing device 201, a computer 202 (terminal), and a pattern database 203 as shown in Fig. 10 will be described as an example.

[0073] The component processing device 201 includes a particle distribution means for concentrating photoreactive particles in a coating film formed on the component's surface to the component's surface, and a light irradiation means for irradiating light onto the photoreactive particles in the coating film. The component processing device 201 can be any of the component processing devices 10a, 10b, and 10c described above. The computer 202 includes an information acquisition means for requesting processing pattern information from the pattern database 203, a storage means for storing the processing pattern information received from the database 203, an electrode control means for controlling the particle distribution means of the component processing device 201, and a light irradiation control means for controlling the light irradiation means of the component processing device 201. The pattern database 203 includes an information storage means for storing multiple pieces of processing pattern information corresponding to the processing to be performed on the component (e.g., information on transmission / non-transmission of an optical shutter, information on whether an electrode is energized / de-energized, etc.). The computer 202 and the pattern database 203 are connected to each other via a communication line N. The component processing device 201 is connected to the computer 202 via wired or wireless communication.

[0074] FIG. 11 shows an example of the operation sequence of the billing system 200. The billing system 200 is used to trade machining pattern information used in machining components between a user who wants to use the machining pattern information and a business that owns the pattern database 203. That is, the user (user) enters into a contract with a business such as a corporation that operates the pattern database 203. Next, when the user desires necessary information, such as machining pattern information optimal for assembling a semiconductor IC (described later), the user accesses the pattern database 203 from the user's computer 202 and issues a request for the desired machining pattern information to the pattern database 203 via the information acquisition means of the computer 202 (S210). After the user is billed (billing process) for the requested machining pattern information (S221) and paid (S222), the pattern database 203 transmits the desired machining pattern information (signal) to the computer 202 via a communication line N or the like (S230). Upon receiving the desired machining pattern information, the computer 202 stores the desired machining pattern information in a memory or the like (S240). Then, the computer 202 controls the optical shutter, electrodes, etc. of the component processing device 201 based on the stored processing pattern information, and processes the component (S250, 260). For example, the computer 202 is made to function as a light irradiation control means, and the processing pattern information stored in the computer 202 is transmitted to the component processing device 201 to control the light irradiation means, or the computer 202 is made to function as an electrode control means, and the processing pattern information stored in the computer 202 is transmitted to the component processing device 201 to control the particle uneven distribution means, thereby grinding the processed surface of the component into the desired processing pattern.

[0075] A fee is set for each processing pattern information. In this case, the pattern database can vary the fee depending on the rarity or difficulty of the pattern information, or the fee can be fixed regardless of rarity or difficulty. As described above, a user who wishes to purchase (acquire) processing pattern information completes the purchase by transferring a specified fee. This purchase process may be realized, for example, by making payment from computer 202 to a payment agency server of a payment agency. In this way, the component processing system of the present invention can also be applied to online businesses. The billing system 200 allows users to easily obtain processing pattern information and easily change the processing pattern to be formed.

[0076] <Method of joining components> Components can be joined together using the recesses and / or protrusions on the workpiece surfaces formed by the component processing method of the present invention. The joining method of the present invention, which utilizes the component processing method of the present invention, is suitable for joining various electronic components. This allows for the production of an electronic component having a first component having a joining portion with a recess formed therein and a second component having a joining portion with a protrusion that can fit into the recess, with the protrusion of the second component being fitted into the recess of the first component, thereby joining the components together. Examples of first and second components that make up electronic components include various components such as Si chips, wiring boards, lids, cameras, memories, CPUs, and power supplies.

[0077] The bonding method of the present invention will be specifically described using the bonding of a wiring board 50, which is a first component, and a semiconductor element 60, which is a second component, as shown in FIG. 12 . First, a recess 54 is formed in the bonding portion 52 of the wiring board 50 where the semiconductor element 60 is bonded, using the component processing method of the present invention. Furthermore, a protrusion 64 that can fit into the recess 54 of the wiring board 50 is formed in the bonding portion 62 of the semiconductor element 60 where the wiring board 50 is bonded, using the component processing method of the present invention. Next, the protrusion 64 of the semiconductor element 60 is fitted into the recess 54 of the wiring board 50, thereby bonding the wiring board 50 and the semiconductor element 60. This results in an electronic component having the wiring board 50 having the bonding portion 52 with the recess 54 formed therein and the semiconductor element 60 having the bonding portion 62 with the protrusion 64 that can fit into the recess 54, and in which the wiring board 50 and the semiconductor element 60 are bonded together.

[0078] Furthermore, since the shape of the bonding portion 52 of the wiring substrate 50 and the shape of the bonding portion 62 of the semiconductor element 60 need only be such that they can fit together, a convex portion may be formed on the bonding portion 52 of the wiring substrate 50 and a concave portion may be formed on the bonding portion 62 of the semiconductor element 60, and they may be fitted together. The concave-convex shape may also serve to fix the chips together by fitting them together and to act as a terminal.

[0079] Furthermore, the bonding method of the present invention is not limited to bonding a wiring board and a semiconductor element, and can be used to bond various components such as Si chips, wiring boards, lids, cameras, memories, CPUs, power supplies, etc., as shown in Figures 13 and 14. In this way, the component processing method and bonding method of the present invention allow the processing area to be freely selected to match the package layout.

[0080] Although the bonding method of the present invention forms the uneven portion using the component processing method of the present invention, other methods can also be used. The bonding method of the present invention is very useful for producing a wide variety of semiconductor modules in small quantities, and the formation of the uneven portion allows for a wide variety of chip placements and simplifies the bonding between chips, while also improving the bonding strength and accuracy between chips and between the chip and the substrate. [Industrial Applicability]

[0081] The component processing system and component processing method of the present invention can perform processing for bonding components in the semiconductor field, and are therefore industrially useful. [Explanation of symbols]

[0082] 1, 1b Members 2 Coating film 3, 3b, 3c Electric field generation means 4, 4c Light irradiation means 10a, 10b, 10c, 201 Component processing equipment 12 Light irradiation control means 20, 20p, 20n photoreactive particles 22 Solvent 30, 30c First electrode 31 Microelectrode 32 Second electrode 34 Voltage application means 36 Electric field control means 40 light source 42 Optical Shutter 50 wiring board 52, 62 joint 54 Recess 60 Semiconductor elements 64 Convex part 100A, 100B, 100C component processing system 200 Billing System 202 Computer 203 Pattern Database

Claims

1. a coating step of coating a coating solution containing photoreactive particles on a surface to be processed of a member to form a coating film; a particle concentration step of concentrating the photoreactive particles in the coating film on the processed surface side of the member; a light irradiation step of irradiating the photoreactive particles in the coating film with light by a light irradiation means, a process for processing a workpiece surface of the workpiece by the photoreactive particles in the vicinity of the workpiece surface irradiated with the light, The particle concentration process is a process of generating an electric field by an electric field generating means including a first electrode arranged on the coating film and a voltage application means, and concentrating the photoreactive particles in the coating film on the processed surface side of the component.

2. The light irradiation means includes a light source and an optical shutter disposed between the light source and the coating film; The method according to claim 1 , wherein in the light irradiation step, the light shutter is controlled by a light irradiation control means to selectively transmit the light from the light source to the coating film.

3. 3. The method according to claim 1, wherein the electric field generating means includes a second electrode disposed opposite the first electrode across the member.

4. the first electrode includes a plurality of microelectrodes; the electric field generating means comprises the first electrode, the voltage applying means, and an electric field control means; 4. The method according to claim 1, wherein in the particle uneven distribution step, the fine electrodes are controlled by the electric field control means to selectively apply a voltage.

5. the photoreactive particles are core-shell particles; The method of claim 1 , wherein the shell is a fullerene derivative.

6. The method of claim 1 , wherein the coating solution comprises water.

7. The method of claim 1 , wherein the light comprises ultraviolet light.

8. a particle concentration means for concentrating photoreactive particles in a coating film formed on a work surface of a member on the work surface side of the member; a light irradiation means for irradiating the photoreactive particles in the coating film with light, A component processing system, wherein the particle distribution means includes a first electrode placed on a coating film formed on the processed surface of the component, and a voltage application means, and is an electric field generating means for generating an electric field for controlling the position of the photoreactive particles in the coating film.

9. The component processing device and a light irradiation control means for controlling the light of the light irradiation means, the light irradiation means includes a light source and an optical shutter disposed between the light source and the coating film; The system according to claim 8 , wherein the light irradiation control means is a means for controlling a light transmission area of ​​the optical shutter.

10. 10. The system according to claim 8 or 9, wherein the electric field generating means includes a second electrode disposed opposite the first electrode across the member.

11. the first electrode includes a plurality of microelectrodes; The system according to any one of claims 8 to 10, wherein the electric field generating means includes electric field control means disposed between the first electrode and the voltage applying means and controlling electrical connections between the plurality of microelectrodes and the voltage applying means, respectively.

12. A method for joining a first member and a second member, A method according to any one of claims 1 to 7, comprising the steps of: forming a recess at a joint portion of the first member with the second member; forming a protrusion that can fit into the recess at a joint portion of the second member with the first member by the method according to any one of claims 1 to 7; and fitting the convex portion of the second member into the concave portion of the first member.

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