Laminate, touch sensor, light control element, photoelectric conversion element, heat control member, antenna, electromagnetic wave shielding member, image display device, and method for manufacturing laminate

Abstract

To provide a metal layer having high thermostability; a touch sensor, dimmer element, photoelectric conversion element, hot-wire control member, antenna, electromagnetic wave shield member, and image display apparatus, each of which includes the metal layer; and a method for producing a metal layer having high thermostability.SOLUTION: A metal layer 1 includes, as a main component, a metal belonging to period 3 and / or period 4, and also includes a krypton atom and / or a xenon atom.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a metal layer, a touch sensor, a light control element, a photoelectric conversion element, a heat ray control member, an antenna, an electromagnetic wave shielding member, an image display device, and a method for manufacturing a metal layer, and more particularly to a metal layer, a touch sensor comprising the metal layer, a light control element comprising the metal layer, a photoelectric conversion element comprising the metal layer, a heat ray control member comprising the metal layer, an antenna comprising the metal layer, an electromagnetic wave shielding member comprising the metal layer, an image display device comprising the metal layer, and a method for manufacturing a metal layer. [Background technology]

[0002] 2. Description of the Related Art In recent years, it has become known that a metal layer is used as an electrode member for a touch panel or the like.

[0003] As such a metal layer, for example, a conductive metal layer formed by sputtering in the presence of argon gas has been proposed (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2012-234796 A Summary of the Invention [Problem to be solved by the invention]

[0005] On the other hand, when the metal layer is processed into an electrode member, the metal layer may be heated, and in such a case, it is required to suppress an increase in the resistance value of the metal layer before and after heating (to have excellent thermal stability).

[0006] The present invention provides a metal layer having excellent heat stability, a touch sensor comprising the metal layer, a dimming element comprising the metal layer, a photoelectric conversion element comprising the metal layer, a heat ray control member comprising the metal layer, an antenna comprising the metal layer, an electromagnetic wave shielding member comprising the metal layer, an image display device comprising the metal layer, and a method for manufacturing a metal layer having excellent heat stability. [Means for solving the problem]

[0007] The present invention [1] is a metal layer containing a metal belonging to Period 3 and / or Period 4 as a main component, and containing krypton atoms and / or xenon atoms.

[0008] The present invention [2] includes the metal layer described in the above [1], which has electrical conductivity.

[0009] The present invention [3] includes the metal layer according to the above [1] or [2], which has a pattern shape.

[0010] The present invention [4] includes a touch sensor comprising the metal layer according to any one of the above [1] to [3].

[0011] The present invention [5] includes a light control element comprising the metal layer according to any one of the above [1] to [3].

[0012] The present invention [6] includes a photoelectric conversion element comprising the metal layer according to any one of the above [1] to [3].

[0013] The present invention [7] includes a heat ray control member having the metal layer according to any one of the above [1] to [3].

[0014] The present invention [8] includes an antenna comprising the metal layer according to any one of the above [1] to [3].

[0015] The present invention [9] includes an electromagnetic wave shielding member comprising the metal layer according to any one of the above [1] to [3].

[0016] The present invention

[10] includes an image display device comprising the metal layer according to any one of the above [1] to [3].

[0017] The present invention

[11] relates to a method for producing a metal layer, which comprises forming a metal layer by a sputtering method using a target made of a metal belonging to the third and / or fourth period in the presence of krypton and / or xenon. Effect of the Invention

[0018] In the method for producing a metal layer of the present invention, a metal layer is formed by a sputtering method using a metal belonging to the third period and / or the fourth period as a target in the presence of krypton and / or xenon.

[0019] When a metal layer is formed by sputtering, atoms derived from the sputtering gas are incorporated into the metal layer.

[0020] In this method, krypton and / or xenon, which have a larger atomic weight than argon, are used as the sputtering gas instead of argon, so that atoms derived from the sputtering gas (krypton atoms and / or xenon atoms) can be prevented from being incorporated into the metal layer.

[0021] This makes it possible to produce a metal layer with excellent thermal stability.

[0022] Therefore, the metal layer of the present invention has excellent heat stability.

[0023] Furthermore, the metal layer, touch sensor, light control element, photoelectric conversion element, heat ray control member, antenna, electromagnetic wave shielding member, and image display device of the present invention have excellent heat stability because they include the metal layer of the present invention. [Brief description of the drawings]

[0024] [Figure 1]FIG. 1 is a schematic diagram showing one embodiment of a metal layer of the present invention. [Diagram 2] FIG. 2 is a schematic diagram showing one embodiment of the method for producing a metal layer of the present invention, in which FIG. 2A shows a step of preparing a substrate, and FIG. 2B shows a step of forming (arranging) a metal layer on one surface in the thickness direction of the substrate by a sputtering method using a metal belonging to the third period and / or the fourth period as a target in the presence of a sputtering gas (krypton and / or xenon). [Diagram 3] FIG. 3 is a schematic diagram showing an embodiment in which the metal layer of the laminate shown in FIG. 2B is patterned. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] As shown in FIG. 1, metal layer 1 has a film shape (including a sheet shape) with a predetermined thickness, extends in a plane direction perpendicular to the thickness direction, and has a flat upper surface and a flat lower surface.

[0026] The metal layer 1 contains a metal and a trace amount of atoms derived from the sputtering gas, and preferably consists of a metal and atoms derived from the sputtering gas. Specifically, the metal layer 1 contains a metal as a main component and atoms derived from the sputtering gas as a trace component, and preferably consists of a metal and atoms derived from the sputtering gas. More specifically, in the metal layer 1, atoms derived from a trace amount of the sputtering gas are present in the metal matrix.

[0027] The metal contains, as a main component, a metal belonging to Period 3 and / or Period 4. That is, the metal layer 1 contains, as a main component, a metal belonging to Period 3 and / or Period 4.

[0028] Examples of metals belonging to the third period include magnesium (Mg), aluminum (Al), silicon (Si), and phosphorus (P), and preferably aluminum (Al).

[0029] Examples of metals belonging to the fourth period include titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), and gallium (Ga), and preferably copper (Cu).

[0030] The metals belonging to the third and / or fourth periods can be used alone or in combination of two or more kinds.

[0031] The metal may also contain other metals as minor components.

[0032] Examples of other metals include metals belonging to the 5th period and metals belonging to the 6th period.

[0033] Examples of metals belonging to the fifth period include zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), and indium (In).

[0034] Examples of metals belonging to the 6th period include tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au).

[0035] The other metals can be used alone or in combination of two or more kinds.

[0036] The metal preferably does not contain other metals and is composed of metals belonging to the third and / or fourth periods, and more preferably is composed of metals belonging to the third period or metals belonging to the fourth period.

[0037] The atoms derived from the sputtering gas are atoms that are incorporated into the metal layer 1 when the metal layer 1 is formed by sputtering, as will be described in detail later, and specifically, examples of the atoms derived from the sputtering gas include krypton atoms and / or xenon atoms. In other words, the metal layer 1 contains krypton atoms and / or xenon atoms.

[0038] The atoms derived from the sputtering gas are preferably krypton atoms or xenon atoms, and more preferably krypton atoms.

[0039] The content of atoms derived from the sputtering gas in the metal layer 1 is, for example, 0.5 atomic % or less, preferably 0.2 atomic % or less, more preferably 0.1 atomic % or less, even more preferably 0.05 atomic % or less, particularly preferably 0.02 atomic % or less, and particularly preferably 0.01 atomic % or less. The content of atoms derived from the sputtering gas is identified, for example, by fluorescent X-ray analysis or Rutherford Backscattering Spectrometry (abbreviated as RBS) described later in the examples.

[0040] The lower limit of the content is the ratio corresponding to the case where the presence of krypton atoms and / or xenon atoms can be confirmed by X-ray fluorescence analysis or Rutherford backscattering analysis, and is at least 0.00001 atomic %.

[0041] The thickness of the metal layer 1 is, for example, 10 nm or more, preferably 30 nm or more, and for example, 5000 nm or less, preferably 1500 nm or less, more preferably 500 nm or less, even more preferably 300 nm or less, and particularly preferably 100 nm or less.

[0042] The method for measuring the thickness of the metal layer 1 will be described in detail in the examples described below.

[0043] Next, a method for producing the metal layer 1 will be described with reference to FIG.

[0044] In this manufacturing method, metal layer 1 is formed by a sputtering method using the above metal (containing a metal belonging to Period 3 and / or Period 4 as the main component) as a target in the presence of a sputtering gas (krypton and / or xenon).

[0045] To form the metal layer 1 by sputtering, first, a base material 2 is prepared as shown in FIG. 2A.

[0046] The substrate 2 has a film shape.

[0047] From the viewpoint of flexibility, for example, a polymer film can be used as the base material 2. Examples of materials for the polymer film include olefin resins such as polyethylene, polypropylene, and cycloolefin polymer, polyester resins such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate, (meth)acrylic resins (acrylic resins and / or methacrylic resins) such as polymethacrylate, polycarbonate resins, polyethersulfone resins, polyarylate resins, melamine resins, polyamide resins, polyimide resins, cellulose resins, and polystyrene resins, and preferably polyester resins, and more preferably polyethylene terephthalate (PET).

[0048] The thickness of the substrate 2 is, for example, 1 μm or more, preferably 10 μm or more, preferably 30 μm or more, and for example, 300 μm or less, preferably 200 μm or less, more preferably 100 μm or less, and still more preferably 60 μm or less.

[0049] The thickness of the substrate 2 can be measured using a dial gauge (manufactured by PEACOCK, "DG-205").

[0050] Furthermore, the substrate 2 may be subjected to a surface treatment such as a hard coat treatment, if necessary, in order to impart scratch resistance.

[0051] Next, as shown in FIG. 2B, a metal layer 1 is formed (placed) on one surface in the thickness direction of the base material 2 by a sputtering method using the above metal as a target in the presence of a sputtering gas (krypton and / or xenon).

[0052] Specifically, in a sputtering device, the substrate 2 is transported along the peripheral surface of a film-forming roll while one surface of the substrate 2 in the thickness direction is opposed to a target made of the above-mentioned metal, and sputtered in the presence of a sputtering gas (preferably krypton or xenon, more preferably krypton).

[0053] Examples of sputtering include a dipole sputtering method, an ECR (electron cyclotron resonance) sputtering method, a magnetron sputtering method, and an ion beam sputtering method.

[0054] Also, in sputtering, reactive gases other than krypton and / or xenon, such as oxygen, can be present.

[0055] The partial pressure of krypton and / or xenon in the sputtering apparatus is, for example, 0.01 Pa or more, preferably 0.1 Pa or more, more preferably 0.3 Pa or more, and for example, 10 Pa or less, preferably 5 Pa or less, more preferably 1 Pa or less.

[0056] The pressure (film formation pressure) in the sputtering apparatus is the total pressure of the partial pressure of krypton and / or xenon and the partial pressure of the reactive gas, and is, for example, 0.1 Pa or more, preferably 0.3 Pa or more, and for example, 15 Pa or less, preferably 10 Pa or less, more preferably 5 Pa or less, even more preferably 1 Pa or less, and particularly preferably 0.5 Pa or less.

[0057] Examples of power sources used for sputtering include direct current (DC) power sources, alternating current / medium frequency (AC / MF) power sources, radio frequency (RF) power sources, and radio frequency power sources superimposed with DC power sources. Preferably, a direct current (DC) power source is used.

[0058] The strength of the horizontal magnetic field on the target surface is, for example, 10 mT or more, preferably 20 mT or more, and for example, 200 mT or less, preferably 100 mT or less. By adjusting the strength of the horizontal magnetic field on the target surface within the above range, the atomic content of the sputtering gas in the metal layer 1 can be adjusted.

[0059] The temperature of the film-forming roll is, for example, -30°C or higher, preferably -10°C or higher, and, for example, 180°C or lower, preferably 90°C or lower, more preferably 60°C or lower, even more preferably 40°C or lower, and particularly preferably less than 10°C.

[0060] By the above-mentioned sputtering, the metal layer 1 is formed (disposed) on one surface in the thickness direction of the base material 2. This results in the metal layer 1, and also in the laminate 3 including the base material 2 and the metal layer 1 in this order toward one side in the thickness direction.

[0061] Such a metal layer 1 has electrical conductivity.

[0062] When the metal layer 1 is conductive, it can be suitably used as an electrode member provided in touch sensors, light control elements, photoelectric conversion elements, heat ray control members, antennas, electromagnetic wave shielding members, image display devices, and the like, which will be described later.

[0063] In detail, when the metal layer 1 is made of copper (Cu), the surface resistance value is, for example, 5 Ω / □ or less, preferably 0.5 Ω / □ or less, more preferably 0.35 Ω / □ or less, even more preferably 0.30 Ω / □ or less, and even more preferably 0.23 Ω / □ or less, and is usually greater than 0.001 Ω / □ and is 0.01 Ω / □ or more, preferably 0.1 Ω / □ or more.

[0064] Furthermore, when the metal layer 1 is made of aluminum (Al), the surface resistance value is, for example, 10 Ω / □ or less, preferably 5.00 Ω / □ or less, more preferably 2.00 Ω / □ or less, and even more preferably 1.70 Ω / □ or less, and is usually greater than 0.001 Ω / □ and is 0.1 Ω / □ or more, preferably 1.00 Ω / □ or more.

[0065] The surface resistance value can be measured by a four-terminal method in accordance with JIS K7194.

[0066] In addition, the resistivity of the metal layer 1 is, for example, 10×10 -6 Ω cm or less, preferably 2.50×10 -6 Ω cm or less, more preferably 2.40×10 -6 Ω cm or less, more preferably 2.30×10 -6 Ω·cm or less, particularly preferably 2.05×10 -6 Ω cm or less, for example, 0.10×10 -6 Ω·cm or more.

[0067] In addition, the resistivity of the metal layer 1 is, for example, 20×10 -6 Ω cm or less, preferably 9.0×10 -6 Ω cm or less, more preferably 7.0×10 -6 Ω cm or less, for example, 0.10×10 -6 Ω cm or more, preferably 1.0×10 -6 Ω·cm or more.

[0068] The resistivity can be calculated based on the following formula (1) using the surface resistance value determined by a four-terminal method in accordance with JIS K7194 and the thickness of the metal layer 1.

[0069] Resistivity of metal layer 1 = thickness of metal layer 1 × surface resistance of metal layer 1 (1) Furthermore, when the metal layer 1 is produced by the above-mentioned sputtering method, atoms derived from the sputtering gas are taken into the metal layer 1.

[0070] However, in this method, krypton and / or xenon, which have a larger atomic weight than argon, are used as the sputtering gas instead of argon, which is usually used, so that atoms derived from the sputtering gas can be prevented from being incorporated into the metal layer 1.

[0071] In other words, although such a metal layer 1 contains krypton atoms and / or xenon atoms, as described above, the amount of krypton atoms and / or xenon atoms incorporated is suppressed, and therefore, the metal layer 1 can suppress an increase in resistance value before and after heating (in other words, the metal layer 1 has excellent thermal stability).

[0072] Furthermore, such a metal layer 1 has excellent thermal stability as described above while containing a metal belonging to Period 3 and / or Period 4 as a main component. That is, according to this method, a metal layer 1 having excellent thermal stability can be manufactured without using an expensive metal such as gold (Au) (a metal belonging to Period 6) as a main component. Therefore, the metal layer 1 has excellent industrial productivity.

[0073] The metal layer 1 may have a resin layer (not shown) adjacent to the metal layer 1 on the side opposite to the substrate 2. The resin layer is, for example, an adhesive layer or a pressure-sensitive adhesive layer for bonding the metal layer 1 to another member, or, for example, a coating layer for protecting the metal layer 1. There is no limitation on the material of the resin layer, and known resins such as acrylic resins can be used. The resin layer may also contain an ultraviolet absorbing agent or a corrosion inhibitor. There is no limitation on the material of the ultraviolet absorbing agent or the corrosion inhibitor, and examples thereof include benzotriazole-based compounds disclosed in JP 2015-022397 A.

[0074] 3, the metal layer 1 in the laminate 3 can be patterned. That is, the metal layer 1 has a pattern shape.

[0075] To pattern the metal layer 1, for example, the metal layer 1 is etched. As a result, the laminate 3 has a patterned portion 4 having the metal layer 1 and a non-patterned portion 5 not having the metal layer 1. The laminate 3 may have a resin layer (not shown) on the upper surface of the patterned portion 4 and the non-patterned portion 5. The resin layer is, for example, an adhesive layer or a pressure-sensitive adhesive layer for bonding the laminate 3 to another member, and is also, for example, a coating layer for protecting the patterned portion 4 of the laminate 3. The resin layer may also contain an ultraviolet absorbing agent, a corrosion inhibitor, or a migration inhibitor, and may contain, for example, a benzotriazole-based compound disclosed in JP 2015-022397 A.

[0076] This metal layer 1 can be used for various applications, and is suitably used as an electrode member provided in, for example, a touch sensor, a light control element (a voltage-driven light control element such as PDLC, PNLC, or SPD, or a current-driven light control element such as electrochromic (EC)), a photoelectric conversion element (a solar cell element represented by an organic thin-film solar cell or a dye-sensitized solar cell), a heat ray control member (a near-infrared reflective and / or absorbing member or a far-infrared reflective and / or absorbing member), an antenna (a light-transmitting antenna), an electromagnetic wave shielding member, a heater member, an image display device, and the like.

[0077] Such touch sensors, light control elements, photoelectric conversion elements, heat ray control members, antennas, electromagnetic wave shielding members, heater members, and image display devices have excellent heat stability because they include the metal layer 1 of the present invention. EXAMPLES

[0078] Specific numerical values ​​of the blending ratio (content ratio), physical property values, parameters, etc. used in the following description can be replaced with the upper limit values ​​(numerical values ​​defined as "not more than" or "less than") or lower limit values ​​(numerical values ​​defined as "not less than" or "exceeding") of the corresponding blending ratio (content ratio), physical property values, parameters, etc. described in the above "Form for carrying out the invention." In addition, unless otherwise specified in the following description, "parts" and "%" are based on mass.

[0079] 1. Fabrication of the metal layer Example 1 A UV-curable acrylic resin was applied to one surface in the thickness direction of a substrate made of a PET film roll (manufactured by Toray Industries, Inc., thickness 50 μm) and cured by UV irradiation to form a hard coat layer with a thickness of 2 μm, and the substrate was prepared.

[0080] The substrate was placed in a vacuum sputtering device, and the ultimate vacuum was 0.9×10 -4 The substrate was degassed by evacuating the substrate sufficiently to a pressure of 1000 Pa. Thereafter, while the substrate was conveyed along the deposition roll, a metal layer having a thickness of 70 nm was formed (placed) on one surface in the thickness direction of the substrate by a sputtering method using copper (Cu) as a target in a low-pressure environment in which krypton atoms (sputtering gas) were present. In this way, a metal layer was produced. The sputtering conditions were as follows: <Sputtering conditions> Power supply: DC power supply Target horizontal magnetic field strength: 90mT Film forming pressure: 0.4Pa Film forming roll temperature: -8℃

[0081] Example 2 A metal layer was produced in the same manner as in Example 1, except that the thickness of the metal layer was changed to 87 nm.

[0082] Example 3 A metal layer was produced in the same manner as in Example 1, except that the target was changed to aluminum (Al) and the horizontal magnetic field strength of the target was changed to 50 mT.

[0083] Comparative Example 1 A metal layer was produced in the same manner as in Example 1, except that the sputtering gas was changed to argon gas.

[0084] Comparative Example 2 A metal layer was produced in the same manner as in Example 2, except that the sputtering gas was changed to argon gas.

[0085] Comparative Example 3 A metal layer was produced in the same manner as in Example 3, except that the sputtering gas was changed to argon gas.

[0086] 2. Evaluation <Thickness of metal layer> For the metal layers of each Example and Comparative Example, a cross-sectional sample for TEM was prepared by FIB microsampling using an FIB device (Hitachi, "FB2200", acceleration voltage: 10 kV). Then, the cross-section was observed using a field emission transmission electron microscope (FE-TEM, JOEL, "JEM-2800", acceleration voltage: 200 kV) to measure the thickness of the metal layer. The results are shown in Table 1.

[0087] <Measurement of surface resistance> The surface resistance value (hereinafter referred to as surface resistance value A) of the metal layer of each of the examples and comparative examples was measured by the four-terminal method in accordance with JIS K7194. The results are shown in Table 1.

[0088] Next, the metal layer of each of the examples and comparative examples was heated at 80° C. for 3 hours, and the surface resistance value (hereinafter referred to as surface resistance value B) was measured in the same manner. The results are shown in Table 1.

[0089] Separately, the metal layer of each of the examples and comparative examples was heated at 140° C. for 1 hour, and the surface resistance value (hereinafter referred to as surface resistance value C) was measured in the same manner. The results are shown in Table 1. <Heating stability> The metal layer of each of the examples and comparative examples was evaluated for heat stability.

[0090] Specifically, the ratio of resistance changes (B / A) and (C / A) were calculated based on the following formulas (2) and (3).

[0091] Ratio of resistance change (B / A) = Surface resistance value B / Surface resistance value A (2) Ratio of resistance change (C / A) = Surface resistance value C / Surface resistance value A (3) The resistance change ratio (B / A) and the resistance change ratio (C / A) indicate the change in surface resistance value after heating relative to the surface resistance value before heating. If the resistance change ratio (B / A) and the resistance change ratio (C / A) are small, it means that the increase in the resistance value of the metal layer before and after heating can be suppressed (excellent heating stability).

[0092] <Measurement of resistivity> For the metal layer of each of the examples and comparative examples, the resistivity was calculated based on the following formula (4).

[0093] Resistivity of metal layer = thickness of metal layer × surface resistance value of metal layer A (4) <Identification of krypton and argon atoms> The presence or absence of krypton atoms and argon atoms in the metal layers of each of the Examples and Comparative Examples was analyzed by Rutherford backscattering spectroscopy (RBS). The presence or absence of krypton atoms or argon atoms in the metal layers was determined by calculating the element ratio for the three elements, namely, the metal element (Cu or Al), Ar, and Kr, which were the detection elements. As a result of the evaluation, it was confirmed that the metal layers of Examples 1 to 3 contained krypton atoms, and the metal layers of Comparative Examples 1 to 3 contained argon atoms. <Equipment used> Pelletron 3SDH (manufactured by National Electrostatics Corporation) <Measurement conditions> Incident ion: 4He ++ Incident energy: 2300keV Incident angle: 0deg Scattering angle: 160deg Specimen current: 5nA Beam diameter: 2mmφ In-plane rotation: None Irradiation dose: 75μC

[0094] 3. Discussion In Example 1 and Comparative Example 1, the metal layers were produced using the same procedure except that the sputtering gases were different.

[0095] Example 1, which uses krypton as the sputtering gas, has smaller resistance change ratios (B / A) and (C / A) than Comparative Example 1, which uses argon.

[0096] This shows that the use of krypton as the sputtering gas provides excellent thermal stability.

[0097] This also applies to the comparison between Example 2 and Comparative Example 2, and the comparison between Example 3 and Comparative Example 3.

[0098] [Table 1] [Explanation of symbols]

[0099] 1 metal layer

Claims

1. A laminate having a base material and a metal layer in order toward one side in a thickness direction, the metal layer is in contact with the substrate; The substrate is a polymer film having a thickness of 10 μm or more and 300 μm or less, the metal layer contains a metal belonging to the third period and / or the fourth period as a main component, and contains krypton atoms and / or xenon atoms; A laminate, wherein the thickness of the metal layer is 30 nm or more and 5000 nm or less.

2. The metal layer according to claim 1 , characterized in that it is electrically conductive.

3. The metal layer according to claim 1 or 2, characterized in that it has a pattern shape.

4. A touch sensor comprising the metal layer according to any one of claims 1 to 3.

5. A light control element comprising the metal layer according to any one of claims 1 to 3.

6. A photoelectric conversion element comprising the metal layer according to any one of claims 1 to 3.

7. A heat ray control member comprising the metal layer according to any one of claims 1 to 3.

8. An antenna comprising the metal layer according to any one of claims 1 to 3.

9. An electromagnetic wave shielding member comprising the metal layer according to any one of claims 1 to 3.

10. An image display device comprising the metal layer according to any one of claims 1 to 3.

11. A method for producing the laminate according to claim 1, comprising the steps of: A method for producing a laminate, comprising the step of forming a metal layer by a sputtering method using a metal belonging to Period 3 and / or Period 4 as a target in the presence of krypton and / or xenon.

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