SUBSTRATE PROCESSING APPARATUS, COMPUTER-READABLE RECORDING MEDIUM HAVING PROGRAM RECORDED THEREON, AND SUBSTRATE PROCESSING METHOD

Abstract

The present invention relates to a substrate processing device that processes a substrate. A substrate processing device (1) comprises a control unit (90). The control unit (90) causes a substrate (W) to rotate at a first speed, and then causes the substrate (W) to rotate at a second speed. After causing the substrate (W) to rotate at the second speed, the control unit (90) causes a drying fluid to be supplied for a prescribed period from a drying fluid nozzle (30) to the substrate (W) while causing the substrate (W) to rotate at a third speed. The control unit (90) causes the drying fluid nozzle (30) to be moved from the center of the substrate (W) towards the peripheral edge of the substrate (W) while continuing the supply of the drying fluid from the drying fluid nozzle (30).

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate, and also to a computer-readable recording medium having a program for executing the substrate processing method recorded thereon. [Background technology]

[0002] Semiconductor devices are manufactured through numerous processes, including repeated deposition, patterning, and etching of various circuits and electrode wiring. As semiconductor devices become more highly integrated, multi-layer structures are required, and planarization is required after deposition of the thin film layers that make up this multi-layer structure, and the surface of the substrate is planarized by a chemical mechanical polishing (CMP) process. CMP planarizes the surface of the substrate through the chemical reaction of an abrasive liquid and the mechanical action of cutting the substrate with abrasive grains by sliding it against the substrate. An example of such a substrate is a wafer.

[0003] Residual materials such as polishing liquid containing abrasive grains and polishing debris remain on the polished substrate. For this reason, after polishing the substrate, the substrate is conventionally cleaned by removing the residual materials from the substrate using a chemical reaction action of a cleaning liquid (mainly acid, alkali, organic acid, etc.) and a physical action of a brush or a jet nozzle, and then removing the foreign materials from the substrate with pure water. Examples of processing methods for the substrate after cleaning include spin-dry drying, in which the pure water on the substrate after cleaning is shaken off by centrifugal force, and Rotagoni drying. Rotagoni drying is a method in which a liquid flow of a cleaning rinse liquid is supplied from a rinse liquid nozzle to a rotating substrate to form a liquid film that covers the entire substrate surface, and a drying gas flow containing IPA (isopropyl alcohol) vapor is supplied from a drying gas nozzle to the inside of the liquid flow, and the rinse liquid nozzle and the drying gas nozzle are moved from the center to the periphery of the rotating substrate to dry the entire substrate surface. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2010-50436 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in recent years, with the increasing integration and density of semiconductor devices, circuit wiring has become finer and wiring materials have changed, which has created a demand for removing even adsorbed moisture (moisture adsorbed on a substrate), which was not an issue with conventional drying methods.The present invention therefore aims to provide a substrate processing apparatus and substrate processing method that improve the removal rate of residual adsorbed moisture on a substrate, and a computer-readable recording medium having a program recorded thereon for executing such a substrate processing method. [Means for solving the problem]

[0006] In one embodiment, a method for processing a substrate is provided, which comprises rotating the substrate at a first speed, supplying liquid to the substrate from a liquid nozzle positioned above a center of the substrate for a predetermined time to form a liquid film on the entire surface of the substrate, stopping the supply of liquid, rotating the substrate at the first speed, rotating the substrate at a second speed, rotating the substrate at the second speed, and while rotating the substrate at a third speed, supplying a dry fluid to the substrate from a dry fluid nozzle positioned above the center of the substrate for a predetermined time, and then moving the dry fluid nozzle from the center of the substrate toward the periphery of the substrate while continuing to supply the dry fluid from the dry fluid nozzle. According to this configuration, a step of rotating the substrate at a second speed after forming a liquid film on the entire surface of the substrate is provided, so that a dry fluid is supplied to the substrate after the central part of the liquid film is thinned or after the liquid film is removed to expose the substrate surface. As a result, the residual adsorbed moisture on the substrate can be more reliably removed, providing an improved substrate processing method, and the amount of drying fluid required for evaporating the liquid can be reduced, resulting in reduced environmental impact and reduced costs.

[0007] In one embodiment, the second speed is faster than the first speed. By making the second speed faster than the first speed and becoming an appropriate speed, the central part of the liquid film can be thinned or removed (the substrate surface can be exposed). In addition, making the second speed faster than the first speed is also preferable from the viewpoint of throughput. In one aspect, the method further includes the step of stopping the movement of the dry fluid nozzle when the dry fluid nozzle is positioned above the peripheral portion of the substrate, and supplying the dry fluid to the peripheral portion of the substrate for a predetermined time to dry the peripheral portion of the substrate. With this configuration, the peripheral portion of the substrate can be dried more reliably, and as a result, the entire surface of the substrate can be dried more reliably. In one aspect, the method further includes the steps of: stopping the supply of the drying fluid from the drying fluid nozzle located above the peripheral portion of the substrate after the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate dries the peripheral portion of the substrate; moving the inert gas nozzle so that the inert gas nozzle is located above the center portion of the substrate; and supplying the inert gas from the inert gas nozzle to the center portion of the substrate. According to this configuration, by supplying the inert gas also from above the substrate, the substrate can be dried more reliably, and the drying quality of the substrate can be improved. In one embodiment, the method further includes a step of supplying an inert gas from the inert gas nozzle onto the substrate while moving the dry fluid nozzle and the inert gas nozzle from a center of the substrate toward a peripheral portion of the substrate. With this configuration, the supply of the inert gas to the substrate surface can promote evaporation of the liquid on the substrate. In one aspect, the step of supplying the inert gas from the inert gas nozzle onto the substrate includes the step of injecting the inert gas behind the injection position of the dry fluid with respect to the movement direction of the dry fluid nozzle and the inert gas nozzle. With this configuration, after the dry fluid is supplied, the inert gas is supplied to the position where the dry fluid was supplied, thereby further promoting evaporation of the liquid. In one embodiment, the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning the central portion of the film, and further includes a step of rotating the substrate at the liquid film formation speed and then rotating the substrate at a thin film formation speed for thinning the central portion of the film, the thin film formation speed being faster than the liquid film formation speed. With this configuration, the liquid on the substrate can be moved radially outward of the substrate by centrifugal force, and the central portion of the liquid film can be thinned or the liquid film can be smoothly removed when the substrate is rotated at the second speed. In one embodiment, the drying fluid is a liquid organic solvent. By using a liquid organic solvent as the drying fluid, the liquid on the substrate can be efficiently evaporated together with the drying fluid. In one embodiment, the dry fluid is a gas containing a gaseous organic solvent, and the content of the organic solvent in the dry fluid is 8% to 30%. By using such a dry fluid, the liquid on the substrate can be efficiently evaporated together with the dry fluid. In one embodiment, the substrate is a substrate whose surface has been planarized by a chemical mechanical polishing process and which has been subjected to processing in a wet state. With this configuration, the central portion of the liquid film can be thinned or the liquid film can be shaken off and removed before the drying fluid is supplied. As a result, the amount of drying fluid used can be reduced, and even the adsorbed moisture on the substrate can be removed without remaining.

[0008] In one aspect, a substrate processing apparatus for processing a substrate includes a substrate holding unit that holds and rotates the substrate, a liquid supply mechanism that supplies liquid from a liquid nozzle onto the substrate, a dry fluid supply mechanism that supplies a dry fluid from a dry fluid nozzle onto the substrate, a nozzle moving mechanism that moves the liquid nozzle and the dry fluid nozzle, and a control unit that controls operation of the substrate holding unit, the liquid supply mechanism, and the dry fluid supply mechanism, wherein the control unit issues a command to the substrate holding unit to rotate the substrate at a first speed, issues a command to the liquid supply mechanism to supply the liquid from the liquid nozzle positioned above a center of the substrate to the substrate for a predetermined time to form a liquid film over the entire surface of the substrate, and a step of rotating the substrate at the first speed, a step of rotating the substrate at the second speed, a step of rotating the substrate at the second speed, a step of rotating the substrate at the third speed, a step of rotating the substrate at the third speed, a step of rotating the substrate at the third speed, a step of rotating the substrate at the third speed, a step of rotating the substrate at the fourth ... As a result, the residual adsorbed moisture on the substrate can be more reliably removed, providing an improved substrate processing method, and the amount of drying fluid required for evaporating the liquid can be reduced, resulting in reduced environmental impact and reduced costs.

[0009] In one embodiment, the second speed is faster than the first speed. By making the second speed faster than the first speed and becoming an appropriate speed, the central part of the liquid film can be thinned or removed (the substrate surface can be exposed). In addition, making the second speed faster than the first speed is also preferable from the viewpoint of throughput. In one aspect, the control unit is configured to, when the drying fluid nozzle is positioned above the peripheral portion of the substrate, issue a command to the nozzle movement mechanism to stop the movement of the drying fluid nozzle for a predetermined time to dry the peripheral portion of the substrate. With this configuration, the peripheral portion of the substrate can be dried more reliably, and as a result, the entire surface of the substrate can be dried more reliably. In one aspect, the substrate processing apparatus further includes an inert gas supply mechanism that supplies an inert gas onto the substrate from an inert gas nozzle, and the control unit is configured to, after the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate dries the peripheral portion of the substrate, issue a command to the nozzle movement mechanism to move the inert gas nozzle so that the inert gas nozzle is located above the center portion of the substrate, and issue a command to the inert gas supply mechanism to supply the inert gas from the inert gas nozzle to the center portion of the substrate. With this configuration, the substrate can be dried more reliably by supplying the inert gas from above the substrate as well, thereby improving the drying quality of the substrate. In one embodiment, the substrate processing apparatus further includes an inert gas supply mechanism that supplies an inert gas onto the substrate from an inert gas nozzle, and the control unit is configured to, when the drying fluid is supplied onto the substrate and the substrate is rotating at a fourth speed, issue a command to the inert gas supply mechanism to supply the inert gas onto the substrate from the inert gas nozzle and issue a command to the nozzle moving mechanism to move the inert gas nozzle from the center of the substrate toward the peripheral edge of the substrate. With this configuration, the supply of the inert gas to the substrate surface can promote evaporation of the liquid on the substrate. In one aspect, the inert gas nozzle is disposed behind the dry fluid nozzle with respect to the direction of movement of the dry fluid nozzle and the inert gas nozzle. With this configuration, after the dry fluid is supplied, an inert gas is supplied to the position where the dry fluid was supplied, thereby further promoting evaporation of the liquid. In one embodiment, the nozzle movement mechanism includes a single arm that holds the liquid nozzle, the dry fluid nozzle, and the inert gas nozzle together. With this configuration, the nozzle movement mechanism can be configured compactly. In one embodiment, the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning the central portion of the film, and the control unit is configured to rotate the substrate at the liquid film formation speed and then issue a command to the substrate holding unit to rotate the substrate at the thin film formation speed, the thin film formation speed being faster than the liquid film formation speed. With this configuration, the liquid on the substrate can be moved radially outward of the substrate by centrifugal force, and the central portion of the liquid film can be thinned or the liquid film can be smoothly removed when the substrate is rotated at the second speed. In one embodiment, the nozzle movement mechanism includes a heater disposed adjacent to the dry fluid nozzle. With this configuration, the dry fluid ejected from the dry fluid nozzle can be heated. As a result, the evaporation time of the organic solvent such as IPA can be shortened. In one aspect, the drying fluid supply mechanism further includes a conductive drying fluid supply line connected to the drying fluid nozzle, which can prevent static electricity and explosion of the drying fluid. In one aspect, the substrate processing apparatus further includes a ventilation mechanism and an exhaust duct arranged above the substrate holder, the ventilation mechanism and the exhaust duct being configured to form a downflow of air. With this configuration, by forming such a downflow of air, a regular airflow is generated on the front and back surfaces of the substrate, and adhesion of substrate contaminants due to turbulence of the airflow can be prevented. In one embodiment, the drying fluid is a liquid organic solvent. By using a liquid organic solvent as the drying fluid, the liquid on the substrate can be efficiently evaporated together with the drying fluid. In one embodiment, the dry fluid is a gas containing a gaseous organic solvent, and the content of the organic solvent in the dry fluid is 8% to 30%. By using such a dry fluid, the liquid on the substrate can be efficiently evaporated together with the dry fluid. In one aspect, the substrate processing apparatus includes a cover arranged around the substrate held by the substrate holding portion, and the cover is configured to be rotatable in the same rotational direction and at the same rotational speed as the substrate. In one embodiment, the substrate holder includes a plurality of chucks for holding a peripheral portion of the substrate, and the cover is fixed to the plurality of chucks. In one aspect, the substrate processing apparatus includes a cover rotation mechanism that rotates the cover, the cover rotation mechanism including a cover motor and a transmission device that transmits the rotational force of the cover motor to the cover.

[0010] According to one aspect, there is provided a recording medium for use in a substrate processing apparatus for processing a substrate, the recording medium having a program for operating on a computer recorded thereon. The program causes the computer to execute the following steps: issuing a command to a substrate holding unit to rotate the substrate at a first speed, issuing a command to a liquid supply mechanism to supply liquid to the substrate from a liquid nozzle positioned above a center of the substrate for a predetermined period of time to form a liquid film over the entire surface of the substrate W; issuing a command to the liquid supply mechanism to stop the supply of liquid; after rotating the substrate at the first speed, issuing a command to the substrate holding unit to rotate the substrate at a second speed; after rotating the substrate at the second speed, issuing a command to the substrate holding unit to rotate the substrate at a third speed while issuing a command to a dry fluid supply mechanism to supply dry fluid from the dry fluid nozzle to the substrate for a predetermined period of time; and, while continuing the supply of dry fluid from the dry fluid nozzle, issuing a command to a nozzle moving mechanism to move the dry fluid nozzle from the center of the substrate toward the peripheral portion of the substrate. According to this configuration, by providing a step of rotating the substrate at a second speed after forming a liquid film on the entire substrate, a drying fluid is supplied to the substrate after the liquid film is thinned at the center or after the liquid film is removed to expose the substrate surface. As a result, residual adsorbed moisture on the substrate can be more reliably removed, providing an improved substrate processing method. In addition, the amount of drying fluid required to evaporate the liquid can be reduced, reducing the environmental impact and costs.

[0011] In one embodiment, the second speed is faster than the first speed. By making the second speed faster than the first speed and becoming an appropriate speed, the central part of the liquid film can be thinned or removed (the substrate surface can be exposed). In addition, making the second speed faster than the first speed is also preferable from the viewpoint of throughput.

[0012] In one aspect, the program further causes the computer to execute a step of, when the drying fluid nozzle is positioned above the peripheral portion of the substrate, issuing a command to the nozzle movement mechanism to stop the movement of the drying fluid nozzle for a predetermined time to dry the peripheral portion of the substrate. With this configuration, the peripheral portion of the substrate can be dried more reliably, and as a result, the entire surface of the substrate can be dried more reliably. In one aspect, the program further causes the computer to execute the steps of: issuing a command to the nozzle moving mechanism to move the inert gas nozzle so that the inert gas nozzle is positioned above the center of the substrate after the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate dries the peripheral portion of the substrate; and issuing a command to the inert gas supply mechanism to supply the inert gas from the inert gas nozzle to the center of the substrate. With this configuration, the substrate can be dried more reliably by supplying the inert gas from above the substrate as well, thereby improving the drying quality of the substrate. In one embodiment, the program further causes the computer to execute a step of issuing a command to an inert gas supply mechanism to supply an inert gas from an inert gas nozzle onto the surface of the substrate while the drying fluid is being supplied onto the substrate and the substrate is rotating at a fourth speed. With this configuration, by supplying the inert gas to the surface of the substrate, evaporation of the liquid on the substrate can be promoted. In one embodiment, the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning the central portion of the film, and the program further causes the computer to execute a step of rotating the substrate at the liquid film formation speed and then issuing a command to the substrate holder to rotate the substrate at the thin film formation speed, the thin film formation speed being faster than the liquid film formation speed. With this configuration, the liquid on the substrate can be moved radially outward of the substrate by centrifugal force, and the central portion of the liquid film can be thinned or the liquid film can be smoothly removed when the substrate is rotated at the second speed. Effect of the Invention

[0013] According to the present invention, after a liquid film is formed on the entire surface of the substrate, the substrate is rotated at a second speed to thin the central portion of the liquid film on the substrate or to remove the liquid film, and then a drying fluid is supplied to the substrate. As a result, the substrate can be dried while suppressing the remaining adsorbed moisture on the substrate. [Brief description of the drawings]

[0014] [Figure 1] 1 is a perspective view illustrating an embodiment of a substrate processing apparatus. [Diagram 2] FIG. 2 is a side view of the substrate processing apparatus of FIG. [Diagram 3] 1 is a schematic diagram showing an embodiment of a substrate processing apparatus in which a plurality of nozzles are held by a plurality of arms; [Figure 4] 11 is a schematic diagram showing another embodiment of the substrate processing apparatus in which a plurality of nozzles are held by a plurality of arms; FIG. [Diagram 5] FIG. 2 is a top view for explaining the arrangement of a liquid nozzle, a dry fluid nozzle, and an inert gas nozzle. [Figure 6] 1 is a flow chart illustrating one embodiment of a method for processing a substrate. [Figure 7] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 8] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 9] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 10] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 11] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 12] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 13] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 14] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 15] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 16] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 17] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 18] 10A and 10B are schematic diagrams showing another embodiment of a nozzle moving mechanism. [Figure 19] FIG. 11 is a perspective view diagrammatically illustrating another embodiment of the substrate processing apparatus. [Figure 20] FIG. 2 is a schematic diagram of a dry fluid generating device. [Figure 21] 10 is a flowchart showing another embodiment of the method for treating a substrate W. [Figure 22] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 23] FIG. 2 is a diagram showing a state of the substrate processing apparatus; [Figure 24] FIG. 13 is a diagram showing another embodiment of the substrate processing apparatus. [Diagram 25] FIG. 13 is a diagram showing still another embodiment of the substrate processing apparatus. [Figure 26] 1 is a schematic diagram showing an embodiment of a substrate processing system including a substrate processing apparatus; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing an embodiment of a substrate processing apparatus, and FIG. 2 is a side view of the substrate processing apparatus 1 of FIG. 1. A partition wall 6, a ventilation mechanism 8, and an exhaust duct 9, which will be described later, are omitted in FIG. 1. The substrate processing apparatus 1 is an apparatus for processing a substrate. As shown in FIG. 1 and FIG. 2, the substrate processing apparatus 1 includes a substrate holder 10 for holding and rotating the substrate W, a liquid supply mechanism 24 for supplying a liquid to the substrate W, a drying fluid supply mechanism 34 for supplying a drying fluid to the substrate W, an inert gas supply mechanism 54 for supplying an inert gas to the substrate W, a first backside supply mechanism 69 for supplying a liquid to the substrate W, and a second backside supply mechanism 70 for supplying an inert gas to the substrate W. The substrate W of this embodiment is a substrate polished by a chemical mechanical polishing process (CMP) and is a substrate after cleaning. Examples of cleaning methods include liquid cleaning (pure water, chemicals, etc.), mechanical cleaning (sliding with a roll, pencil, etc.), and further a combination of liquid cleaning and mechanical cleaning. The substrate W has a surface 2 which has been subjected to a planarization process.

[0016] As an example of a substrate processing apparatus (chemical mechanical polishing apparatus) in this specification, the entire contents of U.S. Patent Application Publication No. 2017 / 0252894 are incorporated by reference into this application.

[0017] The liquid supply mechanism 24 includes a liquid nozzle 20 that supplies liquid, a liquid supply line 21 that supplies liquid to the liquid nozzle 20, and a liquid flow rate control valve 23 that adjusts the flow rate of liquid flowing through the liquid supply line 21 (the flow rate of liquid supplied to the substrate W). The liquid supply mechanism 24 supplies liquid from the liquid nozzle 20 onto the substrate W.

[0018] The dry fluid supply mechanism 34 includes a dry fluid nozzle 30 that supplies a dry fluid, a dry fluid supply line 31 that supplies the dry fluid to the dry fluid nozzle 30, and a dry fluid flow rate control valve 33 that adjusts the flow rate of the dry liquid flowing through the dry fluid supply line 31 (the flow rate of the dry fluid supplied to the substrate W). The dry fluid supply mechanism 34 supplies the dry fluid from the dry fluid nozzle 30 onto the substrate W.

[0019] The inert gas supply mechanism 54 includes an inert gas nozzle 50 that supplies an inert gas, an inert gas supply line 51 that supplies an inert gas to the inert gas nozzle 50, and an inert gas flow rate control valve 53 that adjusts the flow rate of the inert gas flowing through the inert gas supply line 51 (the flow rate of the inert gas supplied to the substrate W). The inert gas supply mechanism 54 supplies the inert gas from the inert gas nozzle 50 onto the substrate W.

[0020] The first back side supply mechanism 69 includes a first back side nozzle 71 that supplies liquid, a first back side supply line 75 that supplies liquid to the first back side nozzle 71, and a first back side flow rate control valve 79 that adjusts the flow rate of liquid flowing through the first back side supply line 75 (the flow rate of liquid supplied to the substrate W). The first back side supply mechanism 69 supplies liquid from the first back side nozzle 71 to the substrate W.

[0021] The second back side supply mechanism 70 includes a second back side nozzle 72 that supplies an inert gas, a second back side supply line 76 that supplies the inert gas to the second back side nozzle 72, and a second back side flow rate control valve 80 that adjusts the flow rate of the inert gas flowing through the second back side supply line 76 (the flow rate of the inert gas supplied to the substrate W). The second back side supply mechanism 70 supplies the inert gas to the substrate W from the second back side nozzle 72.

[0022] The substrate processing apparatus 1 further includes a nozzle moving mechanism 60 that moves the liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50, and a control unit 90 that controls the operation of the substrate holding unit 10, the liquid supply mechanism 24, the dry fluid supply mechanism 34, the inert gas supply mechanism 54, the first back side supply mechanism 69, the second back side supply mechanism 70, and the nozzle moving mechanism 60.

[0023] The liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50 (hereinafter, sometimes simply referred to as the nozzles 20, 30, 50) are disposed above the substrate W held by the substrate holder 10 and are disposed facing downward (facing the front surface 2 of the substrate W). The back surface nozzles 71, 72 are disposed below the substrate W held by the substrate holder 10 and are disposed facing upward. In this embodiment, the back surface nozzles 71, 72 are disposed facing the center of the back surface 3 of the substrate W, but the nozzle shape may be a single tube, a fan shape, or a cone shape as long as a part of the fluid (inert gas or liquid) hits the center of the back surface 3 of the substrate W. In this embodiment, the positions of the back surface nozzles 71, 72 are fixed, but in one embodiment, the back surface nozzles 71, 72 may be configured to be swingable in a plane parallel to the substrate W (movable in the radial direction of the substrate W) by a back surface nozzle moving mechanism (not shown). The liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50 supply liquid, dry fluid, and inert gas, respectively, to the front surface 2 of the substrate W, and the first back surface nozzle 71 and the second back surface nozzle 72 supply liquid and inert gas, respectively, to the back surface 3 of the substrate W.

[0024] Pure water is used as an example of the liquid supplied from the liquid nozzle 20 and the first back surface nozzle 71. A liquid or gaseous organic solvent is used as an example of the dry fluid. Examples of the organic solvent include IPA (isopropyl alcohol) and fluorine-based solvents containing alcohol. In this specification, organic solvents are defined to include both liquids and gases. When IPA is used as the organic solvent, it is preferable that the concentration of IPA in the organic solvent is 100%, but depending on the processing conditions of the substrate W, the organic solvent may be an IPA mixed fluid. Nitrogen is used as an example of an inert gas.

[0025] The substrate holder 10 includes a plurality of chucks 11 for holding the peripheral portion of the substrate W, and a rotary motor 12 connected to the plurality of chucks 11. The plurality of chucks 11 are configured to hold the substrate W horizontally. The rotary motor 12 is electrically connected to the control unit 90, and the operation of the rotary motor 12 is controlled by the control unit 90. The substrate W held by the chuck 11 is rotated around the axis CP of the substrate holder 10 by the rotary motor 12. In this embodiment, the substrate W rotates in the direction of the arrow Dr shown in FIG. 1, but the rotation direction of the substrate W is not limited to this embodiment, and the substrate W may rotate in the opposite direction to the arrow Dr. When the substrate W is held by the substrate holder 10, the center O of the substrate W and the axis CP coincide with each other. FIGS. 1 and 2 show an example in which the substrate W is gripped by the chuck 11. As an example of the chuck 11, there is one configured so that the edge of the substrate W enters a shallow groove of the chuck 11, but the configuration of the chuck 11 is not limited to this embodiment as long as it is configured to support the side of the substrate W.

[0026] The nozzle moving mechanism 60 includes an arm 61 disposed above the substrate W held by the substrate holding part 10, a rotation motor 62 as an arm rotation mechanism for rotating the arm 61, and a rotation shaft 63 connected to the rotation motor 62. The arm 61 has a length greater than the radius of the substrate W. The liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50 are attached to the tip of the arm 61. The nozzles 20, 30, and 50 are held by the arm 61. The rotation shaft 63 is connected to the other end of the arm 61.

[0027] The turning motor 62 is electrically connected to the control unit 90, and the operation of the turning motor 62 is controlled by the control unit 90. The turning motor 62 turns the turning shaft 63 by a predetermined angle, thereby turning the arm 61 in a plane parallel to the substrate W. Therefore, the turning of the arm 61 moves the liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50 fixed to the arm 61 in the radial direction of the substrate W. During processing of the substrate W, the nozzle moving mechanism 60 moves the nozzles 20, 30, and 50 together from the center of the substrate W toward the peripheral edge of the substrate W (to the radial outside of the substrate W, in the direction of the arrow Dn shown in FIG. 1).

[0028] In the embodiment shown in FIG. 1, the nozzles 20, 30, 50 are held together by one arm 61, but in one embodiment, the nozzles 20, 30, 50 may be held by multiple arms. In the embodiment shown in FIG. 3, the nozzle moving mechanism 60 includes multiple arms 61a, 61b, 61c (a liquid nozzle holding arm 61a, a dry fluid nozzle holding arm 61b, and an inert gas nozzle holding arm 61c). The nozzles 20, 30, 50 are held by the arms 61a, 61b, 61c, respectively. The liquid nozzle 20 is attached to the tip of the liquid nozzle holding arm 61a, the dry fluid nozzle 30 is attached to the tip of the dry fluid nozzle holding arm 61b, and the inert gas nozzle 50 is attached to the tip of the inert gas nozzle holding arm 61c. The other ends of the arms 61a, 61b, 61c are connected to a rotating shaft 63. The configuration of the embodiment shown in FIG. 3, which is not particularly described, is the same as that of the embodiment shown in FIG. 1.

[0029] Fig. 4 is a schematic diagram showing another embodiment of the substrate processing apparatus 1 in which the nozzles 20, 30, and 50 are held by a plurality of arms. The configuration of the embodiment shown in Fig. 4, which is not particularly described, is the same as the embodiment shown in Fig. 1. In the embodiment shown in Fig. 4, the nozzle movement mechanism 60 includes a liquid nozzle movement mechanism 60a that moves the liquid nozzle 20, a dry fluid nozzle movement mechanism 60b that moves the dry fluid nozzle 30, and an inert gas nozzle movement mechanism 60c that moves the inert gas nozzle 50.

[0030] The liquid nozzle moving mechanism 60a includes a liquid nozzle holding arm 61a, a rotation motor 62a for rotating the liquid nozzle holding arm 61a, and a rotation shaft 63a connected to the rotation motor 62a. The dry fluid nozzle moving mechanism 60b includes a dry fluid nozzle holding arm 61b, a rotation motor 62b for rotating the dry fluid nozzle holding arm 61b, and a rotation shaft 63b connected to the rotation motor 62b. The inert gas nozzle moving mechanism 60c includes an inert gas nozzle holding arm 61c, a rotation motor 62c for rotating the inert gas nozzle holding arm 61c, and a rotation shaft 63c connected to the rotation motor 62c. The nozzles 20, 30, and 50 are held by the arms 61a, 61b, and 61c, respectively. The liquid nozzle 20 is attached to the tip of the liquid nozzle holding arm 61a, the dry fluid nozzle 30 is attached to the tip of the dry fluid nozzle holding arm 61b, and the inert gas nozzle 50 is attached to the tip of the inert gas nozzle holding arm 61c. The other ends of the arms 61a, 61b, and 61c are connected to pivots 63a, 63b, and 63c, respectively.

[0031] The turning motors 62a, 62b, 62c are electrically connected to a control unit 90, and the control unit 90 is configured to be able to independently control the operation of the turning motors 62a, 62b, 62c. Each of the turning motors 62a, 62b, 62c rotates each of the turning shafts 63a, 63b, 63c by a predetermined angle, thereby turning each of the arms 61a, 61b, 61c in a plane parallel to the substrate W. The turning of the arms 61a, 61b, 61c moves the nozzles 20, 30, 50 in the radial direction of the substrate W. The nozzle moving mechanism 60 of this embodiment independently moves the nozzles 20, 30, 50 in the radial direction of the substrate W during the processing of the substrate W.

[0032] The arrangement of the liquid nozzle moving mechanism 60a, the dry fluid nozzle moving mechanism 60b, and the inert gas nozzle moving mechanism 60c (hereinafter, sometimes simply referred to as the nozzle moving mechanisms 60a, 60b, and 60c) is not limited to this embodiment. In one embodiment, the nozzle moving mechanisms 60b and 60c may be arranged near the liquid nozzle moving mechanism 60a, or the nozzle moving mechanisms 60a, 60b, and 60c may be arranged at intervals from each other. In FIG. 4, the nozzles 20, 30, and 50 are arranged in the order of the nozzles 20, 30, and 50 in the height direction so that the nozzles 20, 30, and 50 do not collide with each other, but the arrangement of the nozzles 20, 30, and 50 in the height direction is not limited to the order in FIG. 4.

[0033] 1, one end of the liquid supply line 21 is connected to the liquid nozzle 20, and the other end is connected to a liquid supply source (not shown). One end of the dry fluid supply line 31 is connected to the dry fluid nozzle 30, and the other end is connected to a dry fluid supply source (not shown). One end of the inert gas supply line 51 is connected to the inert gas nozzle 50, and the other end is connected to an inert gas supply source (not shown).

[0034] Liquid is supplied from a liquid supply source through a liquid supply line 21 to a liquid nozzle 20 and then from the liquid nozzle 20 to the surface 2 of the substrate W. Drying fluid is supplied from a drying fluid supply source through a drying fluid supply line 31 to a drying fluid nozzle 30 and then from the drying fluid nozzle 30 to the surface 2 of the substrate W. Inert gas is supplied from an inert gas supply source through an inert gas supply line 51 to an inert gas nozzle 50 and then from the inert gas nozzle 50 to the surface 2 of the substrate W.

[0035] A liquid flow control valve 23 is attached to the liquid supply line 21, and the flow rate of the liquid flowing through the liquid supply line 21 (the flow rate of the liquid supplied to the surface 2 of the substrate W) is adjusted by the liquid flow control valve 23. A drying fluid flow control valve 33 is attached to the drying fluid supply line 31, and the flow rate of the drying fluid flowing through the drying fluid supply line 31 (the flow rate of the drying fluid supplied to the surface 2 of the substrate W) is adjusted by the drying fluid flow control valve 33. An inert gas flow control valve 53 is attached to the inert gas supply line 51, and the flow rate of the inert gas flowing through the inert gas supply line 51 (the flow rate of the inert gas supplied to the surface 2 of the substrate W) is adjusted by the inert gas flow control valve 53. The liquid flow control valve 23, the drying fluid flow control valve 33, and the inert gas flow control valve 53 are electrically connected to the control unit 90, and the operations of the liquid flow control valve 23, the drying fluid flow control valve 33, and the inert gas flow control valve 53 are controlled by the control unit 90. The liquid flow control valve 23, the drying fluid flow control valve 33 and the inert gas flow control valve 53 are capable of varying the flow rates of the liquid, the drying fluid and the inert gas, respectively, during processing of the substrate W.

[0036] The liquid flow control valve 23 is configured to open and close the liquid flow path of the liquid supply line 21, the dry fluid flow control valve 33 is configured to open and close the dry fluid flow path of the dry fluid supply line 31, and the inert gas flow control valve 53 is configured to open and close the inert gas flow path of the inert gas supply line 51. When the liquid flow control valve 23, the dry fluid flow control valve 33, and the inert gas flow control valve 53 are opened, the liquid, the dry fluid, and the inert gas are supplied to the liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50, respectively, and when the liquid flow control valve 23, the dry fluid flow control valve 33, and the inert gas flow control valve 53 are closed, the supply of the liquid, the dry fluid, and the inert gas is stopped.

[0037] One end of the first back surface side supply line 75 is connected to the first back surface nozzle 71, and the other end is connected to a liquid supply source (not shown). One end of the second back surface side supply line 76 is connected to the second back surface nozzle 72, and the other end is connected to an inert gas supply source (not shown).

[0038] The liquid is supplied from a liquid supply source through a first back surface side supply line 75 to a first back surface nozzle 71, and is further supplied from the first back surface nozzle 71 to the back surface 3 of the substrate W. The inert gas is supplied from an inert gas supply source through a second back surface side supply line 76 to a second back surface nozzle 72, and is further supplied from the second back surface nozzle 72 to the back surface 3 of the substrate W.

[0039] A first backside flow control valve 79 is attached to the first backside supply line 75, and the flow rate of the liquid flowing through the first backside supply line 75 (the flow rate of the liquid supplied to the backside 3 of the substrate W) is adjusted by the first backside flow control valve 79. A second backside flow control valve 80 is attached to the second backside supply line 76, and the flow rate of the inert gas flowing through the second backside supply line 76 (the flow rate of the inert gas supplied to the backside 3 of the substrate W) is adjusted by the second backside flow control valve 80. The first backside flow control valve 79 and the second backside flow control valve 80 are electrically connected to a controller 90, and the operations of the first backside flow control valve 79 and the second backside flow control valve 80 are controlled by the controller 90. The first backside flow control valve 79 and the second backside flow control valve 80 can change the flow rates of the liquid and the inert gas, respectively, during processing of the substrate W.

[0040] Furthermore, the first backside flow control valve 79 is configured to open and close the flow path of the liquid in the first backside supply line 75, and the second backside flow control valve 80 is configured to open and close the flow path of the inert gas in the second backside supply line 76. When the first backside flow control valve 79 and the second backside flow control valve 80 are opened, the liquid and the inert gas are supplied to the first backside nozzle 71 and the second backside nozzle 72, respectively, and when the first backside flow control valve 79 and the second backside flow control valve 80 are closed, the supply of the liquid and the inert gas is stopped.

[0041] The control unit 90 is composed of at least one computer. The control unit 90 includes a storage device 90a in which a program is stored, and a calculation device 90b that executes calculations according to instructions included in the program. The calculation device 90b includes a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit) that executes calculations according to instructions included in the program stored in the storage device 90a. The storage device 90a includes a main storage device (e.g., random access memory) accessible by the calculation device 90b, and an auxiliary storage device (e.g., a hard disk drive or a solid state drive) that stores data and programs. The program in the control unit 90 includes a recipe for the substrate processing apparatus 1 to execute a processing method for the substrate W.

[0042] The at least one computer may be one server or multiple servers. The control unit 90 may be an edge server or a PLC (programmable logic controller), a cloud server connected to a communication network such as the Internet or a local area network, or a fog computing device (gateway, fog server, router, etc.) installed in the network. The control unit 90 may be multiple servers connected by a communication network such as the Internet or a local area network. For example, the control unit 90 may be a combination of an edge server and a cloud server.

[0043] As shown in FIG. 2, the substrate processing apparatus 1 includes a partition 6 and a ventilation mechanism 8 disposed above the substrate holder 10. The internal space of the partition 6 constitutes a processing chamber 7. The substrate holder 10, the nozzles 20, 30, 50, the nozzle moving mechanism 60, and the back nozzles 71, 72 are disposed in the processing chamber 7. The partition 6 is provided with a door (not shown), through which the substrate W can be loaded into the processing chamber 7 and unloaded from the processing chamber 7. A clean air intake 6a is formed in the upper part of the partition 6, and an exhaust duct 9 is formed in the lower part of the partition 6. The ventilation mechanism 8 is installed on the upper surface of the partition 6. The ventilation mechanism 8 includes a fan 8A and a filter 8B that removes particles and dust in the air sent from the fan 8A. The ventilation mechanism 8 sends clean air into the processing chamber 7 through the clean air intake 6a and exhausts the gas in the processing chamber 7 through the exhaust duct 9. This forms a downflow of clean air in the processing chamber 7. By forming such a downflow of air, a regular airflow is generated on the front surface 2 and the back surface 3 of the substrate W, and adhesion of substrate contaminants due to turbulence of the airflow can be prevented.

[0044] In one embodiment, the exhaust duct 9 may be composed of a plurality of exhaust ports (not shown) formed in the lower portion of the partition wall 6. By forming the exhaust duct 9 with a plurality of exhaust ports, a downward flow with less turbulence can be obtained. In one embodiment, the exhaust duct 9 may be formed in the entire lower portion of the partition wall 6.

[0045] In this embodiment, an organic solvent such as IPA (isopropyl alcohol) or a fluorine-based solvent containing alcohol is used as the drying fluid. In this embodiment, a downflow of air is formed by the ventilation mechanism 8 and the exhaust duct 9, so that the drying fluid supplied to the substrate W can be prevented from evaporating and reattaching to the substrate W, and the evaporation of the liquid on the substrate W, which will be described later, is promoted. In addition, since there is a possibility that an explosive mixed gas will be generated when such an organic solvent is mixed with air, it is necessary to optimize the airflow in the processing chamber 7 and exhaust the gas from a safety standpoint. In this embodiment, a downflow of air is formed by the ventilation mechanism 8 and the exhaust duct 9, so that an explosion can be prevented.

[0046] In one embodiment, in order to prevent the above-mentioned explosion, a part or the whole of the dry fluid supply line 31 may be made of a conductive material. By using a conductive material as the material of the dry fluid supply line 31, static electricity can be prevented and an explosion of the dry fluid can be prevented. Furthermore, in one embodiment, a conductive material may be used as a part or the whole of the material of the chuck 11. Furthermore, in one embodiment, the dry fluid supply line 31 and / or the chuck 11 may be connected to earth to prevent the dry fluid supply line 31 and / or the chuck 11 from being charged. Here, a specific example of the conductive material used for the dry fluid supply line 31 is a conductive resin tube (a tube whose surface is laminated with a conductive resin, a tube material whose surface is coated with a resin material mixed with conductive resin particles (CNT), etc.). Furthermore, a specific example of the conductive material used for the chuck 11 is conductive polyether ether ketone (conductive PEEK).

[0047] FIG. 5 is a top view for explaining the arrangement of the liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50. As shown in FIG. 5, the liquid nozzle 20, the dry fluid nozzle 30, and the inert gas nozzle 50 are arranged adjacent to each other. The inert gas nozzle 50 is arranged behind (upstream of) the dry fluid nozzle 30 with respect to the moving direction Dn of the nozzles 20, 30, and 50. More specifically, the inert gas nozzle 50 is arranged so as to follow the trajectory that the dry fluid nozzle 30 draws during its movement. In other words, the inert gas nozzle 50 is arranged on an arc L having a radius that is a straight line connecting the axis of the rotation shaft 63 (see FIG. 1) and the dry fluid nozzle 30. Therefore, the inert gas nozzle 50 moves following the dry fluid nozzle 30 while drawing the same trajectory as the dry fluid nozzle 30.

[0048] In this embodiment, the liquid nozzle 20 is disposed downstream (in front) of the dry fluid nozzle 30 in the moving direction Dn. In this embodiment, the liquid nozzle 20 is disposed on the arc L, but the arrangement of the liquid nozzle 20 is not limited to this embodiment. In one embodiment, the liquid nozzle 20 may be disposed at a position off the arc L. As long as the inert gas nozzle 50 is disposed so as to be able to move following the dry fluid nozzle 30, the arrangement of the nozzles 20, 30, 50 is not limited to this embodiment. The liquid nozzle 20 and the inert gas nozzle 50 may be disposed at a position off the arc L, but by disposing the dry fluid nozzle 30 and the inert gas nozzle 50 as in the embodiment shown in FIG. 5, the evaporation of the liquid on the substrate W (drying of the substrate W), which will be described later, is promoted. This is because, when the dry fluid nozzle 30 and the inert gas nozzle 50 are disposed as in the embodiment shown in FIG. 5, the inert gas nozzle 50 moves following the dry fluid nozzle 30 along the same trajectory as the dry fluid nozzle 30, and can inject the inert gas immediately behind the injection position of the dry fluid. Examples of the shape of the nozzle of the nozzle 20, 30, 50 include a circle, a sector, and an ellipse, but the shape of the nozzle of the nozzle 20, 30, 50 is not limited to these. In addition, the nozzle 20, 30, 50 is configured to be able to spray fluid in various forms regardless of the form of the fluid to be sprayed (liquid, liquid foam, spray, etc.).

[0049] Next, a method for processing the substrate W will be described. FIG. 6 is a flow chart showing an embodiment of the method for processing the substrate W. FIGS. 7 to 17 are diagrams showing the state of the substrate processing apparatus 1 in each process from step 1-1 to step 1-10. In FIGS. 7 to 17, the substrate holder 10, the swivel motor 62, the swivel shaft 63, and the control unit 90 are omitted. In FIGS. 7 to 17, the valves depicted in white indicate an open state, and the valves depicted in black indicate a closed state. The following processes from step 1-1 to step 1-10 are performed while supplying an inert gas from the second rear surface nozzle 72 to the rear surface 3. By supplying an inert gas to the rear surface 3 during the processing of the substrate W, the substrate W can be processed while drying the rear surface 3. In one embodiment of the processing method described below, the substrate processing apparatus 1 described with reference to FIGS. 1, 2, and 5 is used unless otherwise specified.

[0050] First, the substrate processing apparatus 1 rotates the substrate W at a first speed and supplies liquid to the substrate W (surface 2 of the substrate W) for a predetermined time from the liquid nozzle 20 positioned above the center of the substrate W, thereby forming a liquid film (liquid film) on the entire surface of the substrate W (the entire surface 2 of the substrate W) (steps 1-1 to 1-4). Specifically, the control unit 90 issues a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at a first speed, and issues a command to the liquid flow rate control valve 23 of the liquid supply mechanism 24 to supply liquid to the substrate W from the liquid nozzle 20 positioned above the center of the substrate W for a predetermined time, thereby forming a liquid film on the entire surface of the substrate W.

[0051] To simplify, the liquid film is constantly subjected to a force p (p=4σ / d, where d is the diameter of the liquid film) that tries to contract inward as if it were covered with an elastic film due to the surface tension σ (σ=0.0728N / m for water at 20 degrees). If the rotation speed of the substrate W becomes too high and the centrifugal force becomes greater than the surface tension σ, the liquid film may not be formed. Therefore, the centrifugal force F (F=mω) acting on the liquid film on the substrate W is 2r. The rotation speed of the substrate W (the above-mentioned first speed) is preset so that the surface tension σ is greater than ω (ω is an angular velocity proportional to the rotation speed of the substrate W).

[0052] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes the steps of issuing a command to the substrate holding unit 10 to rotate the substrate W at a first speed, and issuing a command to the liquid flow control valve 23 of the liquid supply mechanism 24 to supply liquid to the substrate W from the liquid nozzle 20 positioned above the center of the substrate W for a predetermined time, thereby forming a liquid film over the entire surface of the substrate W.

[0053] Details of steps 1-1 to 1-4 are described below. The first speed includes a liquid supply speed, a liquid film formation speed, and a thin film formation speed, which will be described later. First, the substrate processing apparatus 1 executes step 1-1. In step 1-1, as shown in FIG. 7, the substrate processing apparatus 1 holds the substrate W on the substrate holding unit 10, and supplies liquid to the front surface 2 and the back surface 3 of the substrate W from the liquid nozzle 20 and the first back surface nozzle 71 positioned above the center of the substrate W for a predetermined time (liquid supply time) while rotating the substrate W at a predetermined liquid supply speed. Furthermore, the substrate processing apparatus 1 supplies an inert gas to the back surface 3 of the substrate W from the second back surface nozzle 72 while rotating the substrate W at the liquid supply speed. In this embodiment, pure water is used as the liquid, and nitrogen is used as the inert gas.

[0054] In step 1-1, first, the control unit 90 issues a command to the turning motor 62 of the nozzle moving mechanism 60 to move the liquid nozzle 20 above the center of the substrate W. As a result, the arm 61 is located on the axis CP. The liquid nozzle 20 ejects the liquid onto the center of the front surface 2 of the substrate W. The first back surface nozzle 71 ejects the liquid onto the center of the back surface 3 of the substrate W. The second back surface nozzle 72 ejects the inert gas onto the center of the back surface 3. Here, the liquid supply speed is the rotation speed of the substrate W when the liquid is supplied to the substrate W in step 1-1. When the embodiment shown in FIG. 4 is used, the control unit 90 issues a command to the turning motor 62a of the nozzle moving mechanism 60 to move the liquid nozzle 20 above the center of the substrate W. As a result, the liquid nozzle holding arm 61a is located on the axis CP. When the embodiment shown in FIG. 4 is used, the dry fluid nozzle holding arm 61b and the inert gas nozzle holding arm 61c are located at the retreat position (outside the substrate holding unit 10).

[0055] The liquid supplied to the center of the front surface 2 of the substrate W spreads over the entire front surface 2 of the substrate W due to centrifugal force, and the liquid supplied to the center of the back surface 3 of the substrate W spreads over the entire back surface 3 of the substrate W due to centrifugal force. The inert gas supplied to the center of the back surface 3 of the substrate W spreads over the entire back surface 3 of the substrate W due to centrifugal force. In one embodiment, in the process of step 1-1, the liquid nozzle 20 may be located on the axis CP (directly above the center O), and the liquid nozzle 20 may spray the liquid toward the center O of the substrate W.

[0056] By spraying the inert gas from the second back surface nozzle 72, it is possible to prevent the liquid supplied from the liquid nozzle 20 and the first back surface nozzle 71 from flowing into the second back surface nozzle 72. In one embodiment, the flow rate of the inert gas supplied to the back surface 3 in step 1-1 is 5 L / min. In one embodiment, the flow rate of the inert gas supplied to the back surface 3 of the substrate W is preset to be always smaller than the flow rate of the inert gas supplied to the front surface 2 of the substrate W, which will be described later.

[0057] Specifically, the control unit 90 issues a command to the rotary motor 12 of the substrate holding unit 10 to rotate the substrate W at the liquid supply speed, while issuing a command to the liquid flow rate control valve 23 of the liquid supply mechanism 24 and the first back side flow rate control valve 79 of the first back side supply mechanism 69 to supply liquid from the liquid nozzle 20 and the first back side nozzle 71 positioned above the center of the substrate W to each of the front side 2 and back side 3 of the substrate W for the liquid supply time. Furthermore, while rotating the substrate W at the liquid supply speed, the control unit 90 issues a command to the second back side flow rate control valve 80 of the second back side supply mechanism 70 to supply inert gas from the second back side nozzle 72 to the back side 3 of the substrate W.

[0058] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes the steps of issuing a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the liquid supply speed, issuing a command to the liquid flow rate control valve 23 of the liquid supply mechanism 24 and the first back surface side flow rate control valve 79 of the first back surface side supply mechanism 69 to supply liquid from the liquid nozzle 20 and the first back surface nozzle 71 positioned above the center of the substrate W to the front surface 2 and the back surface 3 of the substrate W, respectively, for a liquid supply time, and issuing a command to the second back surface side flow rate control valve 80 of the second back surface side supply mechanism 70 to supply an inert gas from the second back surface nozzle 72 to the back surface 3 of the substrate W, while rotating the substrate W at the liquid supply speed.

[0059] In one embodiment, the flow rate of the liquid supplied to the surface 2 of the substrate W is 0.8 L / min. In this case, the liquid supply speed is 35 min -1 , 25min -1 , or 20min -1 The liquid supply flow rate is 0.8 L / min, and the liquid supply speed is 35 min -1 The liquid supply time is 3.75 seconds when the liquid supply flow rate is 0.8 L / min and the liquid supply speed is 25 min -1 The liquid supply time is 7.5 seconds when the liquid supply flow rate is 0.8 L / min and the liquid supply speed is 20 min -1 The liquid supply time is 11.25 seconds.

[0060] Furthermore, in one embodiment, the flow rate of the liquid supplied to the surface 2 of the substrate W is 1 L / min. -1 , 25min -1 , or 20min -1 The liquid supply flow rate is 1 L / min, and the liquid supply speed is 35 min -1 The liquid supply time is 3 seconds when the liquid supply flow rate is 1 L / min and the liquid supply speed is 25 min -1 The liquid supply time is 6 seconds when the liquid supply flow rate is 1 L / min and the liquid supply speed is 20 min -1 The liquid supply time is 9 seconds.

[0061] Furthermore, in one embodiment, the flow rate of the liquid supplied to the surface 2 of the substrate W is 2 L / min. -1 , 25min -1 , or 20min -1 The liquid supply flow rate is 2 L / min and the liquid supply speed is 35 min -1 The liquid supply time is 1.5 seconds when the liquid supply flow rate is 2 L / min and the liquid supply speed is 25 min -1 The liquid supply time is 3 seconds. The liquid supply flow rate is 2 L / min and the liquid supply speed is 20 min -1 The liquid supply time is 4.5 seconds.

[0062] In step 1-2 and step 1-3, as shown in FIG. 8 and FIG. 9, the substrate processing apparatus 1 rotates the substrate W at a predetermined liquid film formation speed for a predetermined time (total liquid film formation time). In step 1-2, as shown in FIG. 8, the substrate processing apparatus 1 stops the supply of liquid from the liquid nozzle 20 and the first back surface nozzle 71 while continuing the supply of inert gas from the second back surface nozzle 72, and rotates the substrate W at a predetermined liquid film formation speed for a predetermined time (first liquid film formation time). Specifically, the control unit 90 issues a command to the liquid flow control valve 23 and the first back surface side flow control valve 79 to stop the supply of liquid while supplying the inert gas from the second back surface nozzle 72 to the back surface 3, and issues a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the liquid film formation speed for the first liquid film formation time. Here, the liquid film formation speed is the rotation speed of the substrate W for forming a liquid film on the front surface 2 of the substrate W. The liquid film formation speed is the same as or slower than the liquid supply speed. In one embodiment, the liquid film formation rate is 20 min -1 and the first liquid film formation time is 3 seconds. In one embodiment, the flow rate of the inert gas supplied to the rear surface 3 in step 1-2 is 5 L / min.

[0063] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes the steps of issuing commands to the liquid flow control valve 23 and the first back surface side flow control valve 79 to stop the supply of liquid, and issuing commands to the rotation motor 12 to rotate the substrate W at the above liquid film formation speed for the first liquid film formation time. The above steps are executed in a state in which the inert gas is supplied to the back surface 3 from the second back surface nozzle 72.

[0064] In the liquid film state of step 1-2, the centrifugal force acting on the liquid film on the surface 2 of the substrate W is smaller than the surface tension acting between the liquid and the upper surface of the substrate, or the centrifugal force and the surface tension are almost equal. As the rotation speed of the substrate W is reduced, the centrifugal force acting on the liquid on the substrate W weakens, and the amount of liquid discharged from the substrate W decreases.

[0065] In step 1-3, as shown in FIG. 9, the substrate processing apparatus 1 continues to supply the inert gas from the second back surface nozzle 72 while continuing to rotate the substrate W at the liquid film formation speed for a predetermined time (second liquid film formation time).

[0066] In one embodiment, the flow rate of the inert gas supplied to the rear surface 3 in step 1-3 is 5 L / min, and the second liquid film formation time is 2 seconds. The total liquid film formation time is the sum of the first liquid film formation time and the second liquid film formation time.

[0067] In step 1-3, in this embodiment, the substrate W is rotated for the second liquid film formation time at the same liquid film formation speed as in step 1-2, but in one embodiment, in step 1-3, the substrate W may be rotated at a speed (second liquid film formation speed) slower than the rotation speed of the substrate W in step 1-2 (first liquid film formation speed).

[0068] By carrying out step 1-1, the liquid (cleaning liquid such as pure water) adhering to the cleaned substrate is mixed with the liquid supplied in step 1-1. Furthermore, by steps 1-1 to 1-3, a uniform liquid film containing the liquid adhering to the cleaned substrate is formed on the front surface 2 of the substrate W (over the entire front surface 2 of the substrate W). By forming a liquid film on the substrate W, it is possible to prevent the formation of watermarks due to the liquid adhering to the cleaned substrate W. Furthermore, by rotating the substrate W at a relatively low speed as described in steps 1-2 and 1-3, it is possible to more reliably prevent the occurrence of watermarks.

[0069] In step 1-4, as shown in FIG. 10, the substrate processing apparatus 1 rotates the substrate W at a predetermined thin film formation speed for a predetermined time (thin film formation time) while continuing to supply the inert gas from the second back surface nozzle 72. Specifically, the control unit 90 issues a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the thin film formation speed for the thin film formation time while continuing to supply the inert gas from the second back surface nozzle 72. Here, the thin film formation speed is a rotation speed of the substrate W for thinning the central part of the liquid film on the front surface 2 of the substrate W. The thin film formation speed is a speed faster than the liquid film formation speed. Specifically, the thin film formation speed is a speed 5 to 25 times faster than the liquid film formation speed. In one embodiment, the thin film formation speed is 100 min -1 The thin film formation time is 2 seconds, and the supply flow rate of the inert gas in steps 1-4 is 5 L / min.

[0070] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes a step of issuing a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the thin film formation speed for the thin film formation time. The above step is executed in a state where an inert gas is supplied to the back surface 3 from the second back surface nozzle 72.

[0071] The thin film region formation process in step 1-4 is a process in which most of the liquid on the substrate W is removed and a circular thin film region in which an extremely thin ultra-thin film (a thin film of liquid) remains in the center of the liquid film is formed. A relatively strong centrifugal force acts on the liquid film on the substrate W, and the liquid present in the center of the surface 2 of the substrate W is pushed outward in the radial direction, forming a circular thin film region in the center of the surface 2 of the substrate W.

[0072] By performing steps 1-4, the substrate processing apparatus 1 uses centrifugal force to gradually move the liquid on the surface 2 of the substrate W outward in the radial direction of the substrate W. As a result, the central portion of the liquid film on the surface 2 becomes thinner and the peripheral portion of the film becomes thicker.

[0073] In step 1-5, as shown in FIG. 11, the substrate processing apparatus 1 changes the supply flow rate of the inert gas and rotates the substrate W at a predetermined second speed (shaking-off speed) for a predetermined time (shaking-off time). Specifically, the control unit 90 issues a command to the second back surface side flow control valve 80 to change the supply amount of the inert gas. The control unit 90 issues a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the second speed for the shaking-off time while supplying the inert gas from the second back surface nozzle 72 to the back surface 3. Here, the second speed is a rotation speed of the substrate W for shaking off the liquid film on the front surface 2 of the substrate W. The second speed is a speed faster than the first speed.

[0074] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes a step of issuing a command to the second backside flow control valve 80 to change the supply amount of the inert gas, and a step of issuing a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the second speed for a shake-off time. Each of the above steps is executed in a state in which the inert gas is supplied to the backside 3 from the second backside nozzle 72.

[0075] In one embodiment, the second speed is 500 min -1 The spin-off time is 1 second, and the supply flow rate of the inert gas in step 1-5 is 2 L / min. In step 1-5, the substrate W is rotated at a second speed to spin off the liquid film on the surface 2 of the substrate W. As a result, the liquid film on the surface 2 is removed, and the surface 2 of the substrate W is exposed.

[0076] In step 1-5, the liquid film on surface 2 is removed, but for example, when substrate W has hydrophilic properties, the liquid on surface 2 may not be completely removed and some of the liquid may remain (adsorbed) on surface 2. In the following steps 1-6 to 1-9, a drying fluid is supplied onto surface 2 of substrate W, and the drying fluid is mixed with the liquid remaining on surface 2, thereby evaporating the liquid together with the drying fluid. In other words, surface 2 of substrate W is dried.

[0077] In step 1-6, as shown in FIG. 12, the substrate processing apparatus 1 supplies liquid IPA (hereinafter referred to as liquid IPA) as a drying fluid to the surface 2 of the substrate W from the dry fluid nozzle 30 for a predetermined time (dry fluid supply time) while rotating the substrate W at a predetermined third speed (dry fluid supply speed). Furthermore, the substrate processing apparatus 1 changes the supply flow rate of the inert gas. In step 1-6, the arm 61 is positioned on the axis CP. Specifically, the dry fluid nozzle 30 is positioned above the center of the substrate W, and the dry fluid nozzle 30 sprays the liquid IPA onto the center of the substrate W. In this embodiment, the dry fluid nozzle 30 is positioned on the axis CP, and the dry fluid nozzle 30 sprays the liquid IPA onto the center O of the substrate W.

[0078] When the embodiment shown in FIG. 3 and FIG. 4 is used, the dry fluid nozzle holding arm 61b is located on the axis CP. When the embodiment shown in FIG. 4 is used, the liquid nozzle holding arm 61a and the inert gas nozzle holding arm 61c are located at the retreat position (outside the substrate holding part 10). When the embodiment shown in FIG. 4 is used, the control part 90 issues a command to the turning motor 62a to move the liquid nozzle 20 and the liquid nozzle holding arm 61a to the retreat position before step 1-6, and issues a command to the turning motor 62b to move the dry fluid nozzle 30 above the center of the substrate W (on the axis CP). When the embodiment shown in FIG. 4 is used, the liquid nozzle 20 and the liquid nozzle holding arm 61a are located at the retreat position in the process after step 1-6.

[0079] In this embodiment, liquid IPA is used as the drying fluid, but in one embodiment, a liquid organic solvent other than liquid IPA may be used. The liquid organic solvent used as the drying fluid has the property of mixing with water and evaporating faster than water (e.g., ethyl alcohol, methyl alcohol, acetone, fluorine-based solvents).

[0080] More specifically, the control unit 90 issues a command to the rotary motor 12 of the substrate holding unit 10 to rotate the substrate W at the third speed, while issuing a command to the drying fluid flow control valve 33 to supply liquid IPA to the front surface 2 of the substrate W from the drying fluid nozzle 30 positioned above the center of the substrate W for the drying fluid supply time. Furthermore, the control unit 90 issues a command to the second back surface side flow control valve 80 to change the supply amount of the inert gas. Here, the third speed is the rotation speed of the substrate W when the drying fluid is supplied to the substrate W in steps 1-6.

[0081] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes the steps of issuing a command to the rotary motor 12 of the substrate holder 10 to rotate the substrate W at a third speed, issuing a command to the drying fluid flow control valve 33 to supply liquid IPA from the drying fluid nozzle 30 positioned above the center of the substrate W to the front surface 2 of the substrate W for a drying fluid supply time, and issuing a command to the second back surface side flow control valve 80 to change the supply amount of inert gas. The above steps are executed in a state in which the inert gas is supplied to the back surface 3 from the second back surface nozzle 72.

[0082] In one embodiment, the third speed is 10 min -1 The flow rate of the liquid IPA supplied in steps 1-6 is 100 mL / min, the drying fluid supply time is 2 seconds, and the supply flow rate of the inert gas in steps 1-6 is 50 L / min.

[0083] In step 1-7, as shown in Fig. 13 and Fig. 14, the substrate processing apparatus 1 rotates the substrate W at a predetermined fourth speed while continuing to supply the inert gas from the dry fluid nozzle 30 onto the front surface 2 of the substrate W (i.e., while continuing to supply the dry fluid from the dry fluid nozzle 30) in a state where the inert gas is continuously supplied from the second rear surface nozzle 72 to the rear surface 3. Furthermore, the substrate processing apparatus 1 moves the nozzles 20, 30, 50 from the center of the substrate W (above the center O of the substrate W) toward the peripheral portion of the substrate W (above the peripheral portion of the substrate W) (moves from the center of the substrate W to the radially outward direction of the substrate W) while supplying the liquid IPA from the dry fluid nozzle 30 onto the front surface 2 of the substrate W and rotating the substrate W at a fourth speed (drying speed). Furthermore, the substrate processing apparatus 1 starts supplying the inert gas from the inert gas nozzle 50 at the same time as the nozzles 20, 30, 50 start moving (see Fig. 13). In step 1-7, the substrate processing apparatus 1 supplies liquid IPA and inert gas onto the surface 2 of the substrate W from the dry fluid nozzle 30 and the inert gas nozzle 50, respectively, while moving the nozzles 20, 30, and 50 from the center of the substrate W toward the periphery of the substrate W (see FIG. 14).

[0084] When the embodiment shown in FIG. 4 is used, after step 1-6, the control unit 90 issues a command to the turning motor 62c to move the inert gas nozzle 50 to a position adjacent to the dry fluid nozzle 30 above the center of the substrate W. At this time, the turning motor 62c moves the inert gas nozzle 50 to the upstream side of the moving direction of the dry fluid nozzle 30 in step 1-7. The process when the embodiment shown in FIG. 4 is used, which is not particularly described, is the same as the process when the embodiment shown in FIG. 1 is used, so that the overlapping description will be omitted. When the embodiment shown in FIG. 4 is used, the substrate processing apparatus 1 moves the nozzles 30, 50 from the center of the substrate W toward the peripheral portion of the substrate W.

[0085] That is, the substrate processing apparatus 1 supplies an inert gas onto the surface 2 of the substrate W from the inert gas nozzle 50 while the liquid IPA is being supplied onto the surface 2 of the substrate W and the substrate W is rotating at the fourth speed. In one embodiment, the supply of the inert gas from the inert gas nozzle 50 may be started when the inert gas nozzle 50 moves above the center O (for example, on the axis CP). Here, the fourth speed is the rotation speed of the substrate W in steps 1-7 and is the rotation speed of the substrate W for drying the substrate W. In this embodiment, nitrogen is used as the inert gas sprayed from the inert gas nozzle 50.

[0086] More specifically, while the inert gas is continuously supplied from the second rear surface nozzle 72 to the rear surface 3, the control unit 90 issues a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at a fourth speed while continuing to supply liquid IPA from the dry fluid nozzle 30 onto the front surface 2 of the substrate W. Furthermore, while the control unit 90 is supplying liquid IPA from the dry fluid nozzle 30 onto the front surface 2 of the substrate W and rotating the substrate W at the fourth speed, the control unit 90 issues a command to the rotation motor 62 of the nozzle moving mechanism 60 (the rotation motors 62b and 62c when the embodiment of FIG. 4 is used) to move the nozzles 20, 30, and 50 (the nozzles 30 and 50 when the embodiment of FIG. 4 is used) from the center of the substrate W (above the center O of the substrate W) toward the peripheral portion of the substrate W (above the peripheral portion of the substrate W) (from the center of the substrate W to the radially outward direction of the substrate W). Furthermore, in a state in which the liquid IPA is supplied onto the surface 2 of the substrate W and the substrate W is rotating at a fourth speed, the control unit 90 issues a command to the inert gas flow control valve 53 to supply the inert gas from the inert gas nozzle 50 onto the surface 2 of the substrate W. In other words, simultaneously with the start of movement of the dry fluid nozzle 30 or when the inert gas nozzle 50 moves above the center O, the control unit 90 issues a command to the inert gas flow control valve 53 to start supplying the inert gas from the inert gas nozzle 50 onto the surface 2 of the substrate W.

[0087] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes the steps of: rotating the substrate W at a fourth speed by issuing a command to the rotation motor 12 of the substrate holder 10 while supplying the liquid IPA from the dry fluid nozzle 30 onto the surface 2 of the substrate W; moving the nozzles 20, 30, 50 (or the nozzles 30, 50) from the center of the substrate W toward the periphery of the substrate W while supplying the liquid IPA from the dry fluid nozzle 30 onto the surface 2 of the substrate W and rotating the substrate W at the fourth speed; and supplying an inert gas flow control valve 53 to supply an inert gas from the inert gas nozzle 50 onto the surface 2 of the substrate W while the liquid IPA is being supplied onto the surface 2 of the substrate W and the substrate W is rotating at the fourth speed (hereinafter, this step is referred to as an inert gas supply step). In one embodiment, the inert gas supplying step includes a step of issuing a command to the inert gas flow control valve 53 to start supplying the inert gas from the inert gas nozzle 50 onto the front surface 2 of the substrate W simultaneously with the start of movement of the dry fluid nozzle 30, or a step of issuing a command to the inert gas flow control valve 53 to start supplying the inert gas from the inert gas nozzle 50 onto the front surface 2 when the inert gas nozzle 50 moves above the center O. The above step is performed in a state in which the inert gas is being supplied to the back surface 3 from the second back surface nozzle 72.

[0088] In one embodiment, the fourth speed is 500 min -1 The flow rate of the liquid IPA supplied in steps 1-7 is 100 mL / min, and the time (drying time) for performing steps 1-7 is 28.3 seconds or 30 seconds. The flow rate of the inert gas supplied from the inert gas nozzle 50 in steps 1-7 is 150 L / min, and the flow rate of the inert gas supplied from the second backside nozzle 72 is 50 L / min. Furthermore, in one embodiment, the fourth speed may be gradually increased during the performance of steps 1-7. In one embodiment, the fourth speed is increased to 10 min during the performance of steps 1-7. -1 From 1000 min -1(rotational acceleration of 35 rpm / s). In one embodiment, the inert gas nozzle 50 is configured to supply a larger amount of inert gas per unit time than the dry fluid nozzle 30.

[0089] In this embodiment, in step 1-7, the substrate processing apparatus 1 moves the nozzle 20, 30, 50 (or the nozzle 30, 50) once from the center of the substrate W (above the center O of the substrate W) toward the peripheral portion of the substrate W (above the peripheral portion of the substrate W). In one embodiment, the substrate processing apparatus 1 may move the nozzle 20, 30, 50 (or the nozzle 30, 50) to above the center of the substrate W again after the nozzle 20, 30, 50 (or the nozzle 30, 50) moves to the peripheral portion of the substrate (above the peripheral portion). Furthermore, in one embodiment, the substrate processing apparatus 1 may move the nozzle 20, 30, 50 (or the nozzle 30, 50) back and forth between the center and the peripheral portion of the substrate W multiple times. The angular velocity of the arm 61 (or the arm 61b, 61c), i.e., the moving speed of the nozzle 20, 30, 50 (or the nozzle 30, 50), is calculated from the allowable processing time and number of times.

[0090] In one embodiment, when the dry fluid nozzle 30 is positioned above the peripheral portion of the substrate W (for example, at a position where the outermost portion of the liquid IPA sprayed from the dry fluid nozzle 30 collides with the edge of the substrate W), the substrate processing apparatus 1 may stop the movement of the dry fluid nozzle 30 for a predetermined time (peripheral portion drying time) (when the dry fluid nozzle 30 is positioned above the peripheral portion of the substrate W, the movement of the dry fluid nozzle 30 may be stopped and the liquid IPA may be supplied to the peripheral portion of the substrate W for the peripheral portion drying time) to dry the peripheral portion of the substrate W. Specifically, when the dry fluid nozzle 30 is positioned above the peripheral portion of the substrate W, the control unit 90 may issue a command to the nozzle moving mechanism 60 to stop the movement of the dry fluid nozzle 30 for the peripheral portion drying time to dry the peripheral portion of the substrate W. The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 may execute a step of issuing a command to the nozzle movement mechanism 60 to stop the movement of the drying fluid nozzle 30 for a peripheral portion drying time to dry the peripheral portion of the substrate W when the drying fluid nozzle 30 is positioned above the peripheral portion of the substrate W. In one embodiment, the peripheral portion drying time is 1 second to 10 seconds.

[0091] Furthermore, if none of the nozzles 20, 30, 50 are present above the peripheral edge of the substrate W, turbulence in the airflow caused by a mixture of airflow hitting the edge of the substrate W and airflow not hitting the substrate W can cause droplets of liquid IPA, etc. to randomly scatter within the processing chamber 7, which can contaminate the substrate processing apparatus 1 (e.g., the inner wall of the partition 6). However, the presence of the dry fluid nozzle 30 above the peripheral edge of the substrate W more reliably prevents droplets of liquid IPA, etc. from scattering, and more effectively prevents contamination of the substrate processing apparatus 1.

[0092] In step 1-8, when the drying fluid nozzle 30 moves to the edge of the substrate W (directly above the edge of the substrate W), the supply of the liquid IPA is stopped (see FIG. 15). Specifically, when the drying fluid nozzle 30 moves to the edge of the substrate W, the control unit 90 issues a command to the drying fluid flow control valve 33 to stop the supply of the liquid IPA. The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes a step of issuing a command to the drying fluid flow control valve 33 to stop the supply of the liquid IPA when the drying fluid nozzle 30 moves to the edge of the substrate W. Periphery drying time When the movement of the drying fluid nozzle 30 is stopped to dry the peripheral portion of the substrate W, the control unit 90 issues a command to the drying fluid flow control valve 33 to stop the supply of the liquid IPA after the peripheral drying time has elapsed.

[0093] In step 1-9, when the inert gas nozzle 50 moves to the edge of the substrate W (directly above the edge of the substrate W), the supply of the inert gas is stopped (see FIG. 16). Specifically, when the inert gas nozzle 50 moves to the edge of the substrate W, the control unit 90 issues a command to the inert gas flow control valve 53 to stop the supply of the inert gas. The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes a step of issuing a command to the inert gas flow control valve 53 to stop the supply of the inert gas when the inert gas nozzle 50 moves to the edge of the substrate W.

[0094] By steps 1-6 to 1-9, liquid IPA can be supplied to the entire surface 2 of the substrate W. Therefore, even adsorbed moisture on the surface 2 of the substrate W can be removed without remaining thereon. As a result, the substrate can be dried without any liquid remaining on the surface 2 of the substrate W.

[0095] Supplying an inert gas to the position where the liquid IPA is supplied can promote evaporation of the liquid (drying of the substrate W). The inert gas nozzle 50 injects the inert gas behind the injection position of the drying fluid. In the embodiment described with reference to FIG. 5, the inert gas nozzle 50 is disposed adjacent to the dry fluid nozzle 30, and moves following the dry fluid nozzle 30 along the same trajectory as the dry fluid nozzle 30. Therefore, by disposing the dry fluid nozzle 30 and the inert gas nozzle 50 as shown in FIG. 5, after the liquid IPA is supplied, the inert gas is immediately supplied to the position where the liquid IPA is supplied, and evaporation of the liquid (drying of the substrate W) is further promoted.

[0096] In this embodiment, liquid IPA is supplied after removing the liquid film on surface 2 in steps 1-5. Therefore, the amount of drying fluid required for evaporating the liquid can be reduced, leading to cost reduction.

[0097] In step 1-10, as shown in FIG. 17, while the inert gas is continuously supplied from the second rear surface nozzle 72 to the rear surface 3, the substrate processing apparatus 1 moves the inert gas nozzle 50 above the center of the substrate W, and rotates the substrate W at a predetermined fifth speed (finishing drying speed) for a predetermined time (finishing drying time). As an example, the substrate processing apparatus 1 moves the inert gas nozzle 50 directly above the center O (on the axis CP). Furthermore, the substrate processing apparatus 1 supplies the inert gas from the inert gas nozzle 50 onto the front surface 2 of the substrate W while rotating the substrate W at the fifth speed. Specifically, the inert gas nozzle 50 sprays the inert gas onto the center of the substrate W to supply the inert gas to the center of the substrate W. The evaporation of the liquid is further promoted by step 1-10, and the substrate W is more reliably dried.

[0098] Specifically, while the inert gas is being continuously supplied from the second rear surface nozzle 72 to the rear surface 3, the control unit 90 issues a command to the turning motor 62 (the turning motor 62c when the embodiment of FIG. 4 is used) of the nozzle moving mechanism 60 to move the inert gas nozzle 50 above the center of the substrate W, and issues a command to the rotating motor 12 of the substrate holding unit 10 to rotate the substrate W at a fifth speed. While rotating the substrate W at the fifth speed, the control unit 90 issues a command to the inert gas flow control valve 53 of the inert gas supply mechanism 54 to supply the inert gas from the inert gas nozzle 50 to the center of the substrate W. When the embodiment of FIG. 4 is used, before moving the inert gas nozzle 50 above the center of the substrate W or while moving the inert gas nozzle 50 above the center of the substrate W, the control unit 90 issues a command to the turning motor 62b to move the dry fluid nozzle holding arm 61b and the dry fluid nozzle 30 to the above-mentioned retreat position.

[0099] The control unit 90 operates according to instructions included in a program electrically stored in the storage device 90a. That is, the control unit 90 executes the steps of issuing a command to the swivel motor 62 (or the swivel motor 62c) of the nozzle moving mechanism 60 to move the inert gas nozzle 50 above the center of the substrate W, issuing a command to the rotation motor 12 to rotate the substrate W at a fifth speed, and issuing a command to the inert gas flow control valve 53 to supply the inert gas from the inert gas nozzle 50 to the center of the substrate W while the substrate W is rotating at the fifth speed. The above steps are executed while the inert gas is being supplied to the rear surface 3 from the second rear surface nozzle 72.

[0100] In one embodiment, the fifth speed is 1800 min -1In step 1-10, the flow rate of the inert gas supplied from the inert gas nozzle 50 is 150 L / min, the flow rate of the inert gas supplied from the second back surface nozzle 72 is 50 L / min, and the finish drying time is 10 seconds. After the finish drying time has elapsed, the control unit 90 issues a command to the inert gas flow control valve 53 and the second back surface nozzle 72 to stop the supply of the inert gas. Furthermore, the control unit 90 issues a command to the rotary motor 12 to stop the rotation of the substrate W. This completes the drying of the substrate.

[0101] In one embodiment, as shown in Fig. 18, the nozzle movement mechanism 60 may further include a heater 65 for heating the drying fluid. In the embodiment shown in Fig. 18, the heater 65 is disposed adjacent to the dry fluid nozzle 30. By heating the dry fluid nozzle 30 with the heater 65, the drying fluid sprayed from the dry fluid nozzle 30 can be heated. This can speed up the evaporation time of the organic solvent such as IPA. In one embodiment, the organic solvent may be directly heated by a heating device (not shown).

[0102] Furthermore, in one embodiment, the substrate W may be heated. In one embodiment, in order to heat the substrate W, the substrate holder 10 may be provided with a heater 65, or the heater 65 may be disposed below the substrate W. Furthermore, in one embodiment, the second back surface side supply line 76 may be connected to a hot water supply source (not shown) instead of the inert gas supply source, and the substrate processing apparatus 1 may be configured to supply hot water instead of the inert gas from the second back surface nozzle 72 to the back surface 3. The drying time of the organic solvent can also be shortened by heating the substrate W.

[0103] FIG. 19 is a perspective view showing another embodiment of the substrate processing apparatus 1. The configuration of this embodiment that is not particularly described is the same as the embodiment described with reference to FIG. 1, FIG. 2, and FIG. 5, so that the overlapping description will be omitted. As shown in FIG. 19, the substrate processing apparatus 1 of this embodiment further includes a dry fluid generating device 35, and an end of the dry fluid supply line 31 is connected to the dry fluid generating device 35. The dry fluid generating device 35 is a device for vaporizing a liquid dry fluid (organic solvent). The gaseous dry fluid generated by the dry fluid generating device 35 is supplied to the dry fluid nozzle 30 from the dry fluid generating device 35 through the dry fluid supply line 31. The configurations of FIG. 3 and FIG. 4 can also be applied to this embodiment.

[0104] 20 is a schematic diagram of the dry fluid generating device 35. The dry fluid generating device 35 includes a gas-liquid mixing section 36 for mixing a liquid dry fluid (organic solvent) with a carrier gas, and a heater 37 for heating the mixed fluid of the dry fluid and the carrier gas discharged from the gas-liquid mixing section 36. The liquid organic solvent and the carrier gas flow into the gas-liquid mixing section 36 to generate a mixed fluid of the organic solvent and the carrier gas. The dry fluid generating device 35 generates a gaseous organic solvent by heating the mixed fluid with the heater 37. Helium is used as an example of the carrier gas.

[0105] A gas (gaseous dry fluid) containing a relatively high concentration of gaseous organic solvent is output from the dry fluid generating device 35. In one embodiment, the content (concentration) of the organic solvent in the dry fluid is 8% to 30%. In this way, by making the dry fluid a gas containing a relatively high concentration of gaseous organic solvent, evaporation of the liquid on the surface 2 can be promoted. In this embodiment, too, a downflow of air is formed by the ventilation mechanism 8 and the exhaust duct 9. Therefore, the evaporated liquid can be actively removed from above the substrate W, which leads to further promotion of evaporation, and furthermore, even if the dry fluid contains a relatively high concentration of organic solvent, explosion can be prevented.

[0106] In one embodiment, the substrate processing apparatus 1 may include a heating device for heating the drying fluid supply line 31. Since the drying fluid generating device 35 outputs a heated drying fluid, by heating the drying fluid supply line 31, condensation on the drying fluid supply line 31 can be prevented.

[0107] Next, another method for processing the substrate W will be described. Fig. 21 is a flow chart showing another embodiment of the method for processing the substrate W. The dry fluid in this embodiment is a gas containing a high concentration of gaseous IPA (vaporized IPA) generated by a dry fluid generating device 35 or the like. The dry fluid used in the processing method of this embodiment described below is simply called vaporized IPA. In one embodiment of the processing method described below, the substrate processing apparatus 1 described with reference to Figs. 19 and 20 is used unless otherwise specified.

[0108] In one embodiment, the drying fluid may be a gas containing a high concentration of a gaseous organic solvent other than IPA (e.g., a fluorine-based solvent containing alcohol). The gaseous organic solvent used as the drying fluid has the property of mixing with water and evaporating faster than water.

[0109] Steps 2-1 to 2-4 are the same as the process (steps 1-1 to 1-4) described with reference to FIGS. 7 to 10, and therefore a duplicated description will be omitted.

[0110] Details of steps 2-5 that are not specifically described are the same as steps 1-5, so duplicated descriptions will be omitted. In one embodiment, the second speed in steps 2-5 is 300 min -1The speed is 3.1 seconds, and the supply flow rate of the inert gas in step 2-5 is 2 L / min. In step 2-5, as shown in FIG. 22, the substrate W is rotated at a second speed, so that the liquid film on the surface 2 of the substrate W is further thinned from the state after step 2-4 is performed. More specifically, the circular thin film area in the center of the surface 2 of the substrate W described in step 1-4 becomes even larger and thinner. In one embodiment, in step 2-5, the second speed and / or the shaking time may be adjusted to shake off the liquid film on the surface 2 of the substrate W, remove the liquid film, and expose the surface 2, as in step 1-5. The exposure of the surface 2 may be the exposure of a part of the surface 2 (for example, the exposure of the center of the surface 2), or the exposure of the entire surface 2.

[0111] Details of step 2-6 that are not particularly described are the same as those of step 1-6, so that the overlapping description will be omitted. In step 2-6, as shown in FIG. 23, the control unit 90 issues a command to the drying fluid flow control valve 33 while rotating the substrate W at a third speed, and supplies vaporized IPA to the surface 2 of the substrate W from the drying fluid nozzle 30 positioned above the center of the substrate W for the drying fluid supply time. Specifically, in step 2-6, as shown in FIG. 23, the substrate processing apparatus 1 supplies vaporized IPA to the thin film formed in step 2-5. When the liquid film is removed in step 2-5, the substrate processing apparatus 1 supplies vaporized IPA onto the surface 2 of the substrate W from which the liquid film has been removed.

[0112] In one embodiment, the third speed in steps 2-6 is 300 min -1 The flow rate of the vaporized IPA supplied in step 2-6 is 5 g / min, the drying fluid supply time is 3 seconds, and the flow rate of the inert gas supplied in step 2-6 is 2 L / min. In one embodiment, the third rate in step 2-6 is 100 min -1 From 300 min -1 (rotational acceleration 100 rpm / s). Specifically, the third speed may be increased to 100 min -1 From 300 min -1While accelerating the drying fluid nozzle 30 at a rotational acceleration of 100 rpm / s, the vaporized IPA is supplied to the front surface 2 of the substrate W for 2 seconds while the drying fluid nozzle 30 is stationary above the center of the substrate W. After the vaporized IPA is supplied to the front surface 2 of the substrate W for 2 seconds, the third speed is increased to 300 min. -1 The vaporized IPA is supplied to the surface 2 of the substrate W for 1 second while the third speed is fixed at 100 min -1 From 300 min -1 When the drying time is increased to 10 seconds, the drying fluid supply time is also 3 seconds.

[0113] In step 2-6, a drying fluid (vaporized IPA) is supplied to the formed thin film (or onto surface 2 from which the liquid film has been removed). As a result, the liquid remaining (adsorbed) on substrate W in step 2-5 mixes with the vaporized IPA and evaporates together with the vaporized IPA. In addition, by supplying vaporized IPA to the formed thin film (or onto surface 2 from which the liquid film has been removed), the amount of drying fluid required for evaporation of the liquid can be reduced.

[0114] The process of step 2-7, which is not particularly described, is similar to step 1-7, and therefore the overlapping description will be omitted. Step 2-7 is different from step 1-7 in that the inert gas is not supplied from the inert gas nozzle 50 onto the surface 2 of the substrate W. That is, the substrate processing apparatus 1 supplies only vaporized IPA onto the surface 2 of the substrate W while moving the nozzles 20, 30, and 50 from the center of the substrate W toward the peripheral portion of the substrate W. When the embodiment shown in FIG. 4 is used, the inert gas nozzle holding arm 61c is located at the retreat position (outside the substrate holding unit 10), and the substrate processing apparatus 1 supplies vaporized IPA onto the surface 2 of the substrate W while moving the dry fluid nozzle 30 from the center of the substrate W toward the peripheral portion of the substrate W.

[0115] Also in this embodiment, as described in step 1-7, after the dry fluid nozzle 30 moves to the peripheral portion of the substrate (above the peripheral portion), the substrate processing apparatus 1 may move the dry fluid nozzle 30 again to the center of the substrate W, or may cause the dry fluid nozzle 30 to reciprocate multiple times between the center and the peripheral portion of the substrate W. In one embodiment, as described in step 1-7, when the dry fluid nozzle 30 is positioned above the peripheral portion of the substrate W, the substrate processing apparatus 1 may stop the movement of the dry fluid nozzle 30 for a predetermined time (peripheral portion drying time) (when the dry fluid nozzle 30 is positioned above the peripheral portion of the substrate W, the substrate processing apparatus 1 may stop the movement of the dry fluid nozzle 30 for a predetermined time (peripheral portion drying time) to dry the peripheral portion of the substrate W (when the dry fluid nozzle 30 is positioned above the peripheral portion of the substrate W, the substrate processing apparatus 1 may stop the movement of the dry fluid nozzle 30 and supply vaporized IPA to the peripheral portion of the substrate W for the peripheral portion drying time).

[0116] In one embodiment, steps similar to steps 1-7 may be performed. That is, in one embodiment, the substrate processing apparatus 1 supplies the vaporized IPA and the inert gas from the dry fluid nozzle 30 and the inert gas nozzle 50 onto the surface 2 of the substrate W, respectively, while moving the nozzles 20, 30, 50 (when the embodiment of FIG. 4 is used, the nozzles 30, 50) from the center of the substrate W toward the peripheral portion of the substrate W. In one embodiment, the supply of the inert gas from the inert gas nozzle 50 may be started simultaneously with the start of the movement of the nozzles 20, 30, 50 (or the nozzles 30, 50), or the supply of the inert gas from the inert gas nozzle 50 may be started when the inert gas nozzle 50 moves above the center O (for example, on the axis CP).

[0117] In one embodiment, the fourth speed in steps 2-7 is 300 min -1 From 1800min -1 (rotational acceleration 50 rpm / s). Furthermore, in one embodiment, the time (drying time) for performing the process of step 2-7 is 30 seconds, the supply flow rate of the vaporized IPA supplied in step 2-6 is 5 g / min, and the supply flow rate of the inert gas from the second back surface nozzle 72 is 50 L / min.

[0118] The process of step 2-8, which is not particularly described, is the same as step 1-8, so that the overlapping description will be omitted. When the process of step 1-7 is performed in step 2-7, the process of step 1-9 is also performed. In one embodiment, when the dry fluid nozzle 30 moves to the edge of the substrate W, the control unit 90 may issue a command to the swivel motor 62 to stop the movement of the nozzles 20, 30, 50, and issue a command to the inert gas flow control valve 53 to supply the inert gas to the peripheral portion of the substrate W. When the embodiment shown in FIG. 4 is used, when the dry fluid nozzle 30 moves to the edge of the substrate W, the control unit 90 issues a command to the swivel motor 62c to move the inert gas nozzle 50 above the peripheral portion of the substrate W while continuing the movement of the dry fluid nozzle 30. After the control unit 90 moves the inert gas nozzle 50 above the peripheral portion of the substrate W, it issues a command to the inert gas flow control valve 53 to supply the inert gas to the peripheral portion of the substrate W.

[0119] In this embodiment, nitrogen is also used as the inert gas supplied from the inert gas nozzle 50. In one embodiment, the rotation speed (fourth speed) of the substrate W when the inert gas is being supplied from the inert gas nozzle 50 to the peripheral portion of the substrate W is 1800 min -1 The supply time of the inert gas from the inert gas nozzle 50 is 1 second, the supply flow rate of the inert gas from the inert gas nozzle 50 is 100 L / min, and the supply flow rate of the inert gas from the second back surface nozzle 72 is 50 L / min.

[0120] If any liquid remains on surface 2, the liquid evaporates together with the vaporized IPA. By steps 2-6 to 2-8, the vaporized IPA can be supplied to the entire surface 2 of the substrate W. Therefore, even the adsorbed moisture on the substrate W can be removed without remaining thereon. As a result, the substrate can be dried without any liquid remaining on surface 2 of the substrate W.

[0121] Steps 2-9, which are not specifically described, are the same as steps 1-10, so the duplicated description will be omitted. In one embodiment, the fifth speed is 1800 min -1In step 2-8, the flow rate of the inert gas supplied from the inert gas nozzle 50 is 100 L / min, the flow rate of the inert gas supplied from the second back surface nozzle 72 is 50 L / min, and the finish drying time is 5 seconds.

[0122] In each of the above-mentioned methods for processing the substrate W, a liquid film is first formed on the entire surface of the substrate W (the entire surface 2 of the substrate W), and then the substrate W is rotated at a second speed to thin the central portion of the liquid film on the substrate W or to remove the liquid film, and then a drying fluid is supplied to the substrate. As a result, even adsorbed moisture on the substrate can be removed without remaining thereon. Therefore, each of the above-mentioned methods for processing the substrate W can dry the substrate while suppressing the remaining adsorbed moisture on the substrate W. As a result, the removal rate of the residual adsorbed moisture on the substrate W can be improved.

[0123] In addition, as the needs for both hydrophobic and hydrophilic regions to exist on the surface of the same substrate or for various processes to be performed in the same semiconductor manufacturing equipment become apparent, the properties of the substrate surface to be dried are becoming more diverse, and a new concern has arisen that the drying quality (the removal rate of the moisture used in rinsing) will vary for each of the substrates when various substrates are continuously dried in a conventional substrate drying apparatus. In other words, in the conventional substrate drying method, a certain amount of moisture is removed from the substrate in advance, and the moisture that was not completely removed in advance is removed by drying gas, so the removal rate varies for each substrate, and efficient removal is not possible. Each of the above-mentioned processing methods focuses on the fact that the moisture distribution on the surface of each substrate is different for each substrate even if a certain amount of moisture has been removed, and by forming a liquid film on the entire surface of the substrate W once, the above-mentioned variation in moisture distribution for each substrate can be eliminated. Furthermore, by increasing the rotation speed (shaking-off speed) for removing the liquid film, it is possible to suppress the variation in the thinning of the central part of the liquid film and the variation in the removal of the liquid film for each substrate. Furthermore, by supplying a drying fluid after rotating the substrate W at the shaking-off speed, it is possible to suppress the variation in the rate of moisture removal for each substrate.

[0124] A program for causing the control unit 90 to execute each of the above-mentioned steps is recorded in a computer-readable recording medium, which is a non-transitory tangible object, and is provided to the control unit 90 via the recording medium. Alternatively, the program may be input to the control unit 90 via a communication network such as the Internet or a local area network. This recording medium is used in the substrate processing apparatus 1 that processes substrates W, and records a program that runs on a computer.

[0125] When an uneven pattern is formed on the surface of a substrate to be processed, if the substrate is rotated at high speed to shake off the liquid film formed on the substrate surface, the surface tension acting between the liquid and the side of the convex portion of the uneven pattern may cause the convex portion of the uneven pattern to collapse. This phenomenon is particularly likely to occur in the case of an uneven pattern with a large aspect ratio. Therefore, when drying a substrate having an uneven pattern formed on its surface, it is necessary to mix a drying fluid such as IPA with the liquid while the liquid film is formed on the substrate surface and evaporate the liquid together with the drying fluid (replace the liquid with the drying fluid) before shaking off the liquid film.

[0126] As described above, the substrate W of this embodiment is a substrate polished by a chemical mechanical polishing process (CMP) and has a surface 2 that has been subjected to a planarization process. When the substrate processing apparatus 1 processes a substrate whose surface has been planarized by such a chemical mechanical polishing process and that has been subjected to processing in a wet state, the collapse of the above-mentioned convex portion does not occur even if the substrate is rotated at high speed to thin the center of the liquid film on the substrate or to remove the liquid film by shaking it off. Therefore, a liquid film can be formed on the substrate after CMP, and a drying fluid can be supplied after the center of the liquid film is thinned or the liquid film is shaken off and removed. As a result, the amount of drying fluid used can be reduced, and even adsorbed moisture on the substrate can be removed without remaining.

[0127] Fig. 24 is a diagram showing another embodiment of the substrate processing apparatus 1. Some components of the substrate processing apparatus 1 are depicted in Fig. 24. As shown in Fig. 24, the substrate processing apparatus 1 further includes a cover 200 arranged around the substrate W held by the substrate holding part 10. The cover 200 has a cylindrical shape arranged concentrically with the substrate W, and is fixed to a plurality of chucks 11 of the substrate holding part 10. The cover 200 receives liquid scattered from the rotating substrate W due to centrifugal force.

[0128] The cover 200 is disposed radially outward of the substrate W so as to surround the entire circumference of the substrate W. When the control unit 90 issues a command to the substrate holder 10 to rotate the substrate W held by the chuck 11 around the central axis CP of the substrate holder 10, the cover 200 fixed to the chuck 11 rotates in the same rotational direction as the substrate W and at the same rotational speed as the substrate W. In the embodiment shown in Fig. 24, the cover 200 rotates at the same rotational speed as the changing rotational speed of the substrate W. As a result, the cover 200 can reliably collect the liquid splashed from the rotating substrate W and can prevent adverse effects on the drying process due to the splashing of the liquid.

[0129] Fig. 25 is a diagram showing yet another embodiment of the substrate processing apparatus 1. Some components of the substrate processing apparatus 1 are depicted in Fig. 25. As shown in Fig. 25, the substrate processing apparatus 1 may include a cover rotation mechanism 202 that rotates a cover 200. In the embodiment shown in Fig. 25, the cover 200 is not fixed to the chuck 11 of the substrate holding unit 10, and is provided independently of the substrate holding unit 10.

[0130] 25, the cover rotation mechanism 202 includes a cover motor 201 and a transmission device 205 that transmits the rotational force of the cover motor 201 to the cover 200. More specifically, the transmission device 205 includes a gear 204 fixed to the cover motor 201 and teeth 203 attached to the outer circumferential surface of the cover 200 and meshing with the gear 204. When the cover motor 201 rotates, the cover 200 rotates via the transmission device 205 (i.e., the teeth 203 and the gear 204).

[0131] The rotary motor 12 and the cover motor 201 are electrically connected to a control unit 90. The control unit 90 issues commands to the rotary motor 12 and the cover motor 201 so that the cover 200 rotates in the same rotational direction and at the same rotational speed as the substrate W. In this way, the control unit 90 rotates the cover 200 in synchronization with the rotation of the substrate W held by the substrate holding unit 10.

[0132] 25, the transmission device 205 is a combination of the teeth 203 and the gear 204, but the configuration of the transmission device 205 is not limited to this embodiment. In one embodiment, although not shown, the transmission device 205 may be a combination of a motor pulley fixed to the cover motor 201, a cover pulley attached to the outer circumferential surface of the cover 200, and a belt stretched around the motor pulley and the cover pulley.

[0133] Fig. 26 is a schematic diagram showing an embodiment of a substrate processing system 100 including a substrate processing apparatus 1. As shown in Fig. 26, the substrate processing system 100 includes a substantially rectangular housing 101 and a load port 102 on which a substrate cassette containing a large number of substrates is placed. The load port 102 is disposed adjacent to the housing 101. An open cassette, a Standard Manufacturing Interface (SMIF) pod, or a Front Opening Unified Pod (FOUP) can be mounted on the load port 102. The SMIF and FOUP are airtight containers that can store substrate cassettes therein and maintain an environment independent of the external space by covering them with a partition wall.

[0134] The housing 101 accommodates a plurality of (four in this embodiment) polishing units 104a-104d, a first cleaning unit 106 and a second cleaning unit 108 for cleaning polished substrates, and a drying unit 120. The polishing units 104a-104d are arranged along the longitudinal direction of the substrate processing system, and the cleaning units 106, 108 and the drying unit 120 are also arranged along the longitudinal direction of the substrate processing system 100. The drying unit 120 includes the substrate processing apparatus 1 described above.

[0135] A first substrate transport robot 112 is disposed in an area surrounded by the load port 102, the polishing unit 104a, and the drying unit 120, and a substrate transport unit 114 is disposed parallel to the polishing units 104a to 104d. The first substrate transport robot 112 receives an unpolished substrate from the load port 102 and passes it to the substrate transport unit 114, and receives a processed (dried) substrate from the drying unit 120 and returns it to the load port 102. The substrate transport unit 114 transports the substrate received from the first substrate transport robot 112 and delivers the substrate to and from each of the polishing units 104a to 104d. Each polishing unit polishes the surface of the substrate by sliding the substrate against the polishing surface while supplying a polishing liquid to the polishing surface.

[0136] A second substrate transport robot 116 is positioned between the first cleaning unit 106 and the second cleaning unit 108 to transport substrates between these cleaning units 106, 108 and the substrate transport unit 114, and a third substrate transport robot 118 is positioned between the second cleaning unit 108 and the substrate processing apparatus 1 to transport substrates between these units 108, 120.

[0137] A substrate cleaning device that cleans the substrate by rubbing a roll sponge on both sides of the substrate in the presence of a chemical liquid is used as the first cleaning unit 106. A two-fluid type substrate cleaning device is used as the second cleaning unit 108.

[0138] The substrate is polished by at least one of the polishing units 104a to 104d. The polished substrate is cleaned by the first cleaning unit 106 and the second cleaning unit 108, and the cleaned substrate is further processed by the substrate processing apparatus 1.

[0139] In one embodiment, the substrate processing system 100 may include three cleaning units, and may further include a defect inspection device (not shown) for detecting defects (impurities and / or watermarks) contained in the substrate.

[0140] 26, the control unit 90 is disposed inside the housing 101 outside the drying unit 120, but in one embodiment, the control unit 90 may be disposed inside the drying unit 120. By disposing the control unit 90 inside the drying unit 120 (in the vicinity of the substrate processing apparatus 1), the load on the control unit 90 can be reduced and communication delays can be suppressed.

[0141] In one embodiment, the control unit 90 may be disposed in the cleaning units 106 and 108, or in the polishing units 104a to 104d. In one embodiment, the control unit 90 may be disposed outside the housing 101 in a factory in which the substrate processing system 100 is installed. In one embodiment, the polishing unit 90 is composed of a plurality of computers, and the plurality of computers may be distributed in the factory.

[0142] In other words, at least one computer constituting the control unit 90 may be located in the cleaning units 106, 108, near the cleaning units 106, 108, or in the substrate processing system 100 away from the cleaning units 106, 108. In one embodiment, at least one computer constituting the control unit 90 may be located in one line of a plurality of substrate processing systems in a semiconductor substrate manufacturing factory. In one embodiment, the plurality of computers constituting the control unit 90 may be located in a plurality of lines of a plurality of substrate processing systems. In one embodiment, at least one computer constituting the control unit 90 may be located in a line control / monitoring location or a line control / monitoring system in a factory. In one embodiment, at least one computer constituting the control unit 90 may be located in a plurality of factory monitoring locations or a factory monitoring system of a semiconductor substrate manufacturing company, or in a CMP device manufacturing / installation company.

[0143] The above-mentioned embodiment has been described for the purpose of enabling a person having ordinary knowledge in the technical field to which the present invention pertains to carry out the present invention. For example, the present invention can be applied to the processing of a substrate that has undergone a grinding process, a substrate that has undergone a back grinding (or back polishing) process, or a drying process of a substrate that has undergone a coating process by a coating device. Various modifications of the above-mentioned embodiment are naturally possible for a person skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the described embodiment, but is to be interpreted in the broadest scope according to the technical idea defined by the scope of the claims. [Industrial Applicability]

[0144] The present invention can be used in a substrate processing method and a substrate processing apparatus for processing a substrate, and also in a computer-readable recording medium having a program for executing the substrate processing method recorded thereon. [Explanation of symbols]

[0145] 1. Substrate Processing Equipment 2 surface 3 Back side 6 Bulkhead 6a Clean air intake 7 Processing Room 8. Ventilation mechanism 8A Fan 8B Filter 9 Exhaust Duct 10 Board holding part 11 Chuck 12 Rotation Motor 20 Liquid Nozzle 21 Liquid supply line 23 Liquid flow control valve 24 Liquid supply mechanism 30 Dry Fluid Nozzle 31 Dry fluid supply line 33 Dry fluid flow control valve 34 Drying fluid supply mechanism 35 Drying fluid generator 36 Gas-liquid mixing section 37 Heater 50 Inert Gas Nozzle 51 Inert gas supply line 53 Inert gas flow control valve 54 Inert gas supply mechanism 60 Nozzle movement mechanism 60a Liquid nozzle moving mechanism 60b Dry fluid nozzle moving mechanism 60c Inert gas nozzle moving mechanism 61 Arm 61a Liquid nozzle holding arm 61b Dry fluid nozzle holding arm 61c Inert gas nozzle holding arm 62 Swing motor 62a, 62b, 62c Swivel motor 63 Swivel Axis 63a, 63b, 63c Swivel shaft 65 Heater 69 1st back side supply mechanism 70 2nd back side supply mechanism 71 No. 1 back nozzle 72 2nd back nozzle 75 1st backside supply line 76 Second backside supply line 79 First back side flow control valve 80 Second back side flow control valve 90 Control section

Claims

1. A substrate processing apparatus for processing a substrate, a substrate holder that holds and rotates the substrate; a liquid supply mechanism that supplies liquid from a liquid nozzle onto the substrate; a dry fluid supply mechanism that supplies a dry fluid from a dry fluid nozzle onto the substrate; a nozzle moving mechanism that moves the liquid nozzle and the dry fluid nozzle; a control unit that controls operations of the substrate holding unit, the liquid supply mechanism, and the dry fluid supply mechanism, The control unit is issuing a command to the substrate holder to rotate the substrate at a first speed; issuing a command to the liquid supply mechanism to supply the liquid from the liquid nozzle positioned above the center of the substrate to the substrate for a predetermined period of time to form a liquid film over the entire surface of the substrate; issuing a command to the liquid supply mechanism to stop supplying the liquid; After rotating the substrate at the first speed, issue a command to the substrate holder to rotate the substrate at a second speed; after rotating the substrate at the second speed, issuing a command to the substrate holder to rotate the substrate at a third speed while issuing a command to the drying fluid supply mechanism to supply a drying fluid to the substrate for a predetermined time from the drying fluid nozzle positioned above a center of the substrate; Next, while continuing to supply the dry fluid from the dry fluid nozzle, a command is issued to the nozzle moving mechanism to move the dry fluid nozzle from the center of the substrate toward the peripheral portion of the substrate, the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning a central portion of the film, the control unit is configured to rotate the substrate at the liquid film formation speed, and then issue a command to the substrate holding unit to rotate the substrate at the thin film formation speed; The thin film forming speed is faster than the liquid film forming speed.

2. The substrate processing apparatus of claim 1 , wherein the second speed is faster than the first speed.

3. 3. The substrate processing apparatus according to claim 1, wherein the control unit is configured to issue a command to the nozzle moving mechanism when the dry fluid nozzle is positioned above a peripheral portion of the substrate to stop movement of the dry fluid nozzle for a predetermined time period to dry the peripheral portion of the substrate.

4. an inert gas supply mechanism for supplying an inert gas onto the substrate from an inert gas nozzle; 4. The substrate processing apparatus of claim 1, wherein the control unit is configured to issue a command to the nozzle moving mechanism to move the inert gas nozzle so that the inert gas nozzle is positioned above the center of the substrate after the drying fluid supplied from the dry fluid nozzle positioned above the peripheral portion of the substrate has dried the peripheral portion of the substrate, and to issue a command to the inert gas supply mechanism to supply the inert gas from the inert gas nozzle to the center of the substrate.

5. an inert gas supply mechanism for supplying an inert gas onto the substrate from an inert gas nozzle; 4. The substrate processing apparatus of claim 1, wherein the control unit is configured to, while the drying fluid is being supplied onto the substrate and the substrate is rotating at a fourth speed, issue a command to the inert gas supply mechanism to supply the inert gas from the inert gas nozzle onto the substrate, and issue a command to the nozzle movement mechanism to move the inert gas nozzle from the center of the substrate toward the peripheral edge of the substrate.

6. The substrate processing apparatus according to claim 5 , wherein the inert gas nozzle is disposed behind the dry fluid nozzle in a moving direction of the dry fluid nozzle and the inert gas nozzle.

7. The nozzle moving mechanism includes: The substrate processing apparatus according to claim 4 , further comprising a single arm that holds the liquid nozzle, the dry fluid nozzle, and the inert gas nozzle together.

8. The substrate processing apparatus according to claim 1 , wherein the nozzle moving mechanism includes a heater disposed adjacent to the dry fluid nozzle.

9. The substrate processing apparatus according to claim 1 , wherein the drying fluid supply mechanism further comprises a conductive drying fluid supply line connected to the drying fluid nozzle.

10. a ventilation mechanism disposed above the substrate holder; Further equipped with an exhaust duct, The substrate processing apparatus according to claim 1 , wherein the ventilation mechanism and the exhaust duct are configured to form a downflow of air.

11. The substrate processing apparatus according to claim 1 , wherein the drying fluid is a liquid organic solvent.

12. the dry fluid is a gas containing a gaseous organic solvent, 11. The substrate processing apparatus according to claim 1, wherein the content of the organic solvent in the drying fluid is 8% to 30%.

13. the substrate processing apparatus includes a cover disposed around the substrate held by the substrate holder, The substrate processing apparatus according to claim 1 , wherein the cover is configured to be rotatable in the same rotational direction and at the same rotational speed as the substrate.

14. A substrate processing apparatus for processing a substrate, a substrate holder that holds and rotates the substrate; a liquid supply mechanism that supplies liquid from a liquid nozzle onto the substrate; a dry fluid supply mechanism that supplies a dry fluid from a dry fluid nozzle onto the substrate; a nozzle moving mechanism that moves the liquid nozzle and the dry fluid nozzle; a control unit that controls operations of the substrate holding unit, the liquid supply mechanism, and the dry fluid supply mechanism, The control unit is issuing a command to the substrate holder to rotate the substrate at a first speed; issuing a command to the liquid supply mechanism to supply the liquid from the liquid nozzle positioned above the center of the substrate to the substrate for a predetermined period of time to form a liquid film over the entire surface of the substrate; issuing a command to the liquid supply mechanism to stop supplying the liquid; After rotating the substrate at the first speed, issue a command to the substrate holder to rotate the substrate at a second speed; after rotating the substrate at the second speed, issuing a command to the substrate holder to rotate the substrate at a third speed while issuing a command to the drying fluid supply mechanism to supply a drying fluid to the substrate for a predetermined time from the drying fluid nozzle positioned above a center of the substrate; Next, while continuing to supply the dry fluid from the dry fluid nozzle, a command is issued to the nozzle moving mechanism to move the dry fluid nozzle from the center of the substrate toward the peripheral portion of the substrate, the substrate processing apparatus includes a cover disposed around the substrate held by the substrate holder, the cover is configured to be rotatable in the same rotational direction and at the same rotational speed as the substrate, the substrate holder includes a plurality of chucks for holding a peripheral portion of the substrate; The cover is fixed to the plurality of chucks.

15. the substrate processing apparatus includes a cover rotation mechanism that rotates the cover, The cover rotation mechanism includes: A cover motor; The substrate processing apparatus according to claim 14 , further comprising: a transmission device that transmits a rotational force of the cover motor to the cover.

16. A recording medium used in a substrate processing apparatus for processing a substrate, the recording medium having a program that operates on a computer recorded thereon, issuing a command to a substrate holder to rotate the substrate at a first speed, and issuing a command to a liquid supply mechanism to supply liquid to the substrate from a liquid nozzle positioned above a center of the substrate for a predetermined period of time to form a liquid film over the entire surface of the substrate W; issuing a command to the liquid supply mechanism to stop supplying the liquid; after rotating the substrate at the first speed, issuing a command to the substrate holder to rotate the substrate at a second speed; after rotating the substrate at the second speed, issuing a command to the substrate holder to rotate the substrate at a third speed while issuing a command to a dry fluid supply mechanism to supply a dry fluid from a dry fluid nozzle to the substrate for a predetermined time; while continuing to supply the drying fluid from the drying fluid nozzle, issuing a command to a nozzle moving mechanism to move the drying fluid nozzle from a center portion of the substrate toward a peripheral portion of the substrate; the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning a central portion of the film, the program further causes the computer to execute a step of rotating the substrate at the liquid film formation speed, and then issuing a command to the substrate holding unit to rotate the substrate at the thin film formation speed; A non-transitory computer-readable recording medium having recorded thereon a program for causing a computer to execute the program, wherein the thin film formation speed is faster than the liquid film formation speed.

17. 17. The non-transitory computer-readable medium of claim 16, wherein the second speed is faster than the first speed.

18. 18. The non-transitory computer-readable recording medium according to claim 16, wherein the program further causes the computer to execute a step of issuing a command to the nozzle moving mechanism when the dry fluid nozzle is positioned above a peripheral portion of the substrate to stop moving the dry fluid nozzle for a predetermined period of time to dry the peripheral portion of the substrate.

19. the program includes a step of: after the drying fluid supplied from the drying fluid nozzle positioned above the peripheral portion of the substrate dries the peripheral portion of the substrate, issuing a command to the nozzle movement mechanism to move the inert gas nozzle so that the inert gas nozzle is positioned above a center portion of the substrate; 19. The non-transitory computer-readable recording medium of claim 16, further comprising a step of causing a computer to execute a command to an inert gas supply mechanism to supply an inert gas from the inert gas nozzle to a center portion of the substrate.

20. 20. The non-transitory computer-readable recording medium of claim 16, wherein the program further causes a computer to execute a step of instructing an inert gas supply mechanism to supply an inert gas from an inert gas nozzle onto a surface of the substrate while the drying fluid is supplied onto the substrate and the substrate is rotating at a fourth speed.

21. 1. A method for processing a substrate, comprising: rotating the substrate at a first speed and supplying liquid to the substrate for a predetermined period of time from a liquid nozzle positioned above a center portion of the substrate, thereby forming a liquid film on the entire surface of the substrate; Stopping the supply of the liquid; after rotating the substrate at the first speed, rotating the substrate at a second speed; supplying a drying fluid to the substrate for a predetermined time from a drying fluid nozzle positioned above a center portion of the substrate while rotating the substrate at a third speed after rotating the substrate at the second speed; Next, while continuing to supply the drying fluid from the drying fluid nozzle, the drying fluid nozzle is moved from the center of the substrate toward the peripheral edge of the substrate; the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning a central portion of the film, After rotating the substrate at the liquid film formation speed, the method further comprises rotating the substrate at a thin film formation speed for thinning a central portion of the film; The substrate processing method, wherein the thin film formation rate is faster than the liquid film formation rate.

22. 22. The method of claim 21, wherein the second speed is greater than the first speed.

23. 23. The substrate processing method according to claim 21, further comprising the step of stopping movement of the dry fluid nozzle when the dry fluid nozzle is positioned above a peripheral portion of the substrate, and supplying the dry fluid to the peripheral portion of the substrate for a predetermined period of time to dry the peripheral portion of the substrate.

24. 24. The substrate processing method according to claim 21, further comprising the steps of: stopping the supply of the dry fluid from the dry fluid nozzle positioned above the peripheral portion of the substrate after the dry fluid supplied from the dry fluid nozzle positioned above the peripheral portion of the substrate dries the peripheral portion of the substrate; moving the inert gas nozzle so that the inert gas nozzle is positioned above the center portion of the substrate; and supplying an inert gas from the inert gas nozzle to the center portion of the substrate.

25. 24. The substrate processing method according to claim 21, further comprising the step of supplying an inert gas from the inert gas nozzle onto the substrate while moving the dry fluid nozzle and the inert gas nozzle from a center portion of the substrate toward a peripheral portion of the substrate.

26. The step of supplying the inert gas from the inert gas nozzle onto the substrate includes:

26. The substrate processing method according to claim 25, further comprising the step of injecting the inert gas behind an injection position of the dry fluid with respect to a moving direction of the dry fluid nozzle and the inert gas nozzle.

27. 27. The substrate processing method according to claim 21, wherein the drying fluid is a liquid organic solvent.

28. the dry fluid is a gas containing a gaseous organic solvent, 28. The substrate processing method according to claim 21, wherein the content of the organic solvent in the drying fluid is 8% to 30%.

29. 29. The substrate processing method according to claim 21, wherein the substrate is a substrate whose surface has been planarized by a chemical mechanical polishing process and is processed in a wet state.

Images