Semiconductor manufacturing equipment and temperature control method

Abstract

To measure the temperature of gas in a gas introduction pipe.SOLUTION: A semiconductor manufacturing device includes a gas introduction pipe that is connected to a processing container of the semiconductor manufacturing device and introduces gas into the processing container, and a temperature sensor that is provided in the gas introduction pipe and configured to measure the temperature of the gas inside the gas introduction pipe.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a temperature control method. [Background technology]

[0002] For example, it has been proposed to measure the temperature inside a processing chamber of a semiconductor manufacturing apparatus and use the measurement results in controlling process conditions for substrate processing carried out inside the processing chamber (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2004-172409 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of measuring the temperature of gas in a gas inlet pipe. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a gas supply system is provided for connecting to a processing vessel of a semiconductor manufacturing apparatus, Decompressed a gas introduction pipe for introducing a gas into the processing chamber; and a temperature sensor provided in the gas introduction pipe and configured to measure a temperature of the gas inside the gas introduction pipe; a heater disposed inside the gas inlet pipe and configured to heat the gas inside the gas inlet pipe; Have The temperature sensor is disposed at a joint of the gas introduction pipe connected to an injector installed in the processing vessel, and the heater is installed at the joint, inserted from the joint into a pipe constituting the gas introduction pipe, and extends along the extension direction of the pipe. A semiconductor manufacturing apparatus is provided. Effect of the Invention

[0006] According to one aspect, the temperature of the gas in the gas inlet pipe can be measured. [Brief description of the drawings]

[0007] [Figure 1]FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor manufacturing apparatus according to an embodiment. [Diagram 2] 5A and 5B are diagrams showing a temperature sensor according to an embodiment and a temperature sensor according to a comparative example. [Diagram 3] 3A to 3B are diagrams showing examples 1 to 3 of the temperature sensor according to the embodiment. [Figure 4] 1A and 1B are diagrams showing examples 1 and 2 of a heater according to an embodiment. [Diagram 5] 4 is a flowchart showing a temperature control method according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Semiconductor manufacturing equipment] First, an example of a semiconductor manufacturing apparatus according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of a semiconductor manufacturing apparatus according to an embodiment.

[0010] The semiconductor manufacturing apparatus 1 includes a processing vessel 10, a gas supply unit 20, an exhaust unit 30, a heating unit 40, a cooling unit 50, a control unit 90, and the like.

[0011] The processing vessel 10 has a substantially cylindrical shape. The processing vessel 10 includes an inner tube 11, an outer tube 12, a manifold 13, an injector 14, a gas outlet 15, a lid 16, and the like. The inner tube 11 has a substantially cylindrical shape. The inner tube 11 is made of a heat-resistant material such as quartz. The inner tube 11 is also called an inner tube.

[0012] The outer tube 12 has a generally cylindrical shape with a ceiling, and is disposed concentrically around the inner tube 11. That is, the inner tube 11 and the outer tube 12 form a double-tube structure. The outer tube 12 is made of a heat-resistant material such as quartz. The outer tube 12 is also called an outer tube.

[0013] The manifold 13 has a substantially cylindrical shape. The manifold 13 supports the lower ends of the inner tube 11 and the outer tube 12. The manifold 13 is formed of, for example, stainless steel. The injector 14 passes through the manifold 13 and extends horizontally into the inner tube 11, and is bent in an L-shape inside the inner tube 11 and extends upward. The injector 14 has a base end connected to the gas introduction pipe 24 and an open tip. The injector 14 discharges a processing gas (hereinafter, simply referred to as "gas") introduced through the gas introduction pipe 24 into the inner tube 11 from the opening at the tip. The processing gas includes, for example, a film-forming gas, a cleaning gas, and a purge gas. In this embodiment, the film-forming gas is a gas used to form a silicon-containing film, and includes, for example, a silicon-containing gas, a nitriding gas, an oxidizing gas, and a doping gas. The silicon-containing film includes, for example, a silicon film, a silicon nitride film, and a silicon oxide film. The silicon film includes, for example, an amorphous silicon (a-Si) film, a polysilicon (Poly-Si) film, and a doped silicon (Doped-Si) film. The cleaning gas is a gas used to carry out the cleaning method, and includes, for example, a halogen-containing gas such as F2 gas, Cl2 gas, ClF3 gas, NF3 gas, and HF gas. The purge gas is a gas for replacing the atmosphere in the processing vessel 10 with an inert gas atmosphere, and includes, for example, an inert gas such as N2 gas and Ar gas. Note that, although the example of FIG. 1 shows a case where one injector 14 is used, a plurality of injectors 14 may be used.

[0014] The gas outlet 15 is formed in the manifold 13. An exhaust pipe 32 is connected to the gas outlet 15. The processing gas supplied into the processing chamber 10 is exhausted by an exhaust unit 30 via the gas outlet 15.

[0015] The lid 16 airtightly closes the opening at the lower end of the manifold 13. The lid 16 is made of, for example, stainless steel. A wafer boat 18 is placed on the lid 16 via a thermal insulation tube 17. The thermal insulation tube 17 and the wafer boat 18 are made of, for example, a heat-resistant material such as quartz. The wafer boat 18 holds a plurality of wafers W substantially horizontally at a predetermined interval in the vertical direction. The wafer boat 18 is loaded into the processing vessel 10 by the lifting mechanism 19 lifting the lid 16, and is accommodated in the processing vessel 10. The wafer boat 18 is unloaded from the processing vessel 10 by the lifting mechanism 19 lowering the lid 16.

[0016] The gas supply unit 20 includes a gas source 21, an IGS (Integrated Gas System) 22, an external pipe 23, and a gas introduction pipe 24. The gas source 21 is a supply source of processing gas, and includes, for example, a film formation gas source, a cleaning gas source, and a purge gas source. The IGS 22 is an integrated circuit of gas pipes, and integrates a group of pipes connected to the film formation gas source, cleaning gas source, purge gas source, etc. of the gas source 21. A flow rate control unit is installed in the IGS 22, and controls the flow rate of gas flowing through each pipe. The flow rate control unit includes, for example, a mass flow controller, and an opening and closing valve.

[0017] The IGS 22 is connected to an external pipe 23. The external pipe 23 is connected to a gas introduction pipe 24. A heater is wound around the outer wall of the external pipe 23 to heat the external pipe 23. The gas introduction pipe 24 is connected to the processing vessel 10 of the semiconductor manufacturing equipment 1 and introduces gas into the processing vessel 10. That is, the flow rate of the processing gas from the gas source 21 is controlled by a flow rate control unit in the IGS 22, and the processing gas is heated when flowing through the external pipe 23 and flows into the gas introduction pipe 24, and is supplied from the gas introduction pipe 24 into the processing vessel 10 via the injector 14. The injector 14 functions as a gas inlet of the processing vessel 10.

[0018] A gas pipe joint (hereinafter referred to as joint 70) connected to the gas introduction pipe 24 is provided near the gas inlet of the processing vessel 10. A temperature sensor 80 is configured to pass through the joint 70. The temperature sensor 80 is configured to measure the temperature of the gas in the gas introduction pipe 24. The temperature sensor 80 transmits the measured temperature to a control unit 90. A heater 100 is also disposed in the gas introduction pipe 24, and the heater 100 is configured to heat the gas in the gas introduction pipe 24.

[0019] The exhaust section 30 includes an exhaust device 31, an exhaust pipe 32, and a pressure controller 33. The exhaust device 31 is, for example, a vacuum pump such as a dry pump or a turbo molecular pump. The exhaust pipe 32 connects the gas outlet 15 and the exhaust device 31. The pressure controller 33 is disposed in the exhaust pipe 32, and controls the pressure inside the processing vessel 10 by adjusting the conductance of the exhaust pipe 32. The pressure controller 33 is, for example, an automatic pressure control valve.

[0020] The heating unit 40 includes a heat insulating material 41, a heating element 42, and an outer skin 43. The heat insulating material 41 has a substantially cylindrical shape and is provided around the outer tube 12. The heat insulating material 41 is formed mainly of silica and alumina. The heating element 42 has a linear shape and is provided in a spiral or serpentine shape on the inner circumference of the heat insulating material 41. The heating element 42 is configured so that the temperature can be controlled by dividing the heating element 42 into a plurality of zones in the height direction of the processing vessel 10. The outer skin 43 is provided so as to cover the outer circumference of the heat insulating material 41. The outer skin 43 maintains the shape of the heat insulating material 41 and reinforces the heat insulating material 41. The outer skin 43 is formed of a metal such as stainless steel. In addition, a water-cooled jacket (not shown) may be provided around the outer skin 43 to suppress the thermal influence of the heating unit 40 on the outside. The heating unit 40 heats the inside of the processing vessel 10 by the heat generated by the heating element 42.

[0021] The cooling unit 50 supplies a cooling fluid toward the processing vessel 10 to cool the wafer W in the processing vessel 10. The cooling fluid may be, for example, air. The cooling unit 50 supplies the cooling fluid toward the processing vessel 10 when, for example, the wafer W is rapidly cooled after heat treatment. The cooling unit 50 also supplies the cooling fluid toward the inside of the processing vessel 10 when, for example, cleaning is performed to remove a deposited film in the processing vessel 10. The cooling unit 50 has a fluid flow path 51, an outlet hole 52, a distribution flow path 53, a flow rate adjustment unit 54, and a heat exhaust port 55.

[0022] A plurality of fluid flow paths 51 are formed in the height direction between the insulation 41 and the outer skin 43. The fluid flow paths 51 are, for example, flow paths formed along the circumferential direction on the outside of the insulation 41. The blowing holes 52 are formed penetrating the insulation 41 from each fluid flow path 51, and blow out the cooling fluid into the space between the outer pipe 12 and the insulation 41. The distribution flow paths 53 are provided outside the outer skin 43, and distribute and supply the cooling fluid to each fluid flow path 51. The flow rate adjustment unit 54 is interposed in the distribution flow path 53, and adjusts the flow rate of the cooling fluid supplied to the fluid flow paths 51.

[0023] The heat exhaust port 55 is provided above the multiple blowing holes 52, and exhausts the cooling fluid supplied to the space between the outer pipe 12 and the thermal insulation material 41 to the outside of the semiconductor manufacturing equipment 1. The cooling fluid exhausted to the outside of the semiconductor manufacturing equipment 1 is cooled by, for example, a heat exchanger, and is supplied again to the distribution flow path 53. However, the cooling fluid exhausted to the outside of the semiconductor manufacturing equipment 1 may be exhausted without being reused.

[0024] The temperature sensor 60 detects the temperature inside the processing vessel 10. The temperature sensor 60 is provided, for example, in the inner tube 11. However, the temperature sensor 60 may be provided at a position where it can detect the temperature inside the processing vessel 10, for example, in the space between the inner tube 11 and the outer tube 12. The temperature sensor 60 has a plurality of temperature measuring parts provided at different positions in the height direction corresponding to a plurality of zones. The temperature measuring parts of the temperature sensor 60 are provided corresponding to the zones "TOP", "CT", "CTR", "CB" and "BTM" from the top. The plurality of temperature measuring parts may be, for example, thermocouples or resistance temperature detectors. The temperature sensor 60 transmits the temperatures detected by the plurality of temperature measuring parts to the control unit 90.

[0025] The control unit 90 controls the operation of the semiconductor manufacturing apparatus 1. The control unit 90 may be, for example, a computer. A computer program that performs the overall operation of the semiconductor manufacturing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0026] [Temperature sensor] The gas in the gas inlet pipe 24 may be indirectly heated by wrapping a heater around the outer wall of the gas inlet pipe 24, and the temperature of the gas inlet pipe 24 may be measured indirectly by measuring the temperature of the gas inlet pipe 24 with a temperature sensor attached to the outer wall of the gas inlet pipe 24. In this case, a temperature difference occurs between the measured temperature and the temperature of the gas actually flowing in the gas inlet pipe 24. Furthermore, the temperature difference varies depending on the change in the gas flow rate in the gas inlet pipe 24 and the structure of the pipe.

[0027] The gas temperature is one of the factors that affect the process (substrate processing) performed in the processing vessel 10. For this reason, the semiconductor manufacturing apparatus 1 of the present disclosure is provided with a temperature sensor 80 capable of directly measuring the temperature of the gas in the gas inlet pipe 24. The temperature sensor 80 is preferably provided at a position where it can measure a temperature closest to the temperature of the gas in the processing vessel 10, and is preferably provided near the gas inlet of the processing vessel 10. In the example of FIG. 1, a joint 70 is provided near the gas inlet of the gas inlet pipe 24 connected to the injector 14 that introduces gas into the processing vessel 10, i.e., near the injector 14, and the temperature sensor 80 is disposed on the joint 70.

[0028] In the semiconductor manufacturing apparatus 1, when processing a substrate, the inside of the processing vessel 10 is depressurized, and a gas valve (not shown) provided on the gas inlet pipe 24 is opened to supply gas into the processing vessel 10. At this time, gas suddenly flows into the processing vessel 10 of the vacuum chamber at a speed close to or faster than the speed of sound, for example, at a speed of Mach 0.3 to less than Mach 0.1, causing Karman vortices to be generated inside the gas inlet pipe 24. There is a high risk that the temperature sensor 80 will be damaged by the Karman vortices.

[0029] However, if the temperature sensor 80 is made thicker in order to ensure that it has the strength to withstand Karman vortices, the dynamic characteristics of the temperature sensor 80 may be impaired, and there is a risk that the measured temperature may lag behind the actual temperature. Therefore, the temperature sensor 80 of the embodiment described below has a structure that does not impair the dynamic characteristics and is not damaged by Karman vortices.

[0030] Fig. 2(a) shows a temperature sensor 80 according to an embodiment, and Fig. 2(b) shows a temperature sensor 200 according to a comparative example. In Fig. 2(a), two holes are provided penetrating a joint 70 joined to a gas introduction pipe 24, and the temperature sensor 80 is inserted into the two holes and welded to both ends of the joint 70. In this way, the temperature sensor 80 of the present disclosure is supported at two points, point A and point B.

[0031] 2(b), the temperature sensor 200 of the comparative example is inserted through one hole provided in the gas inlet pipe 24. The temperature sensor 200 of the comparative example is supported at one point. It may also be inserted through one hole penetrating the joint 70 joined to the gas inlet pipe 24.

[0032] In both the temperature sensor 80 and the temperature sensor 200, the temperature measuring part TC is disposed inside the inner wall of the gas introduction pipe 24. This allows the temperature of the gas in the gas introduction pipe 24 to be measured. The temperature measuring part TC of the temperature sensor 80 is provided on the central axis Ax of the gas introduction pipe 24, and the temperature measuring part TC of the temperature sensor 200 is provided at a position deviated from the central axis Ax of the gas introduction pipe 24. However, this is not limited thereto, and it is sufficient that the temperature measuring part TC is disposed inside the inner wall of the gas introduction pipe 24. However, it is more preferable that the temperature measuring part TC is disposed near the central axis Ax.

[0033] The temperature sensor 200 of the comparative example has one support point, and resonance is likely to occur in the temperature sensor 200. Since damage due to Karman vortices occurs due to resonance, there is a risk that the temperature sensor 200 will be damaged by the Karman vortex. In addition, the temperature sensor 200 is thicker than the temperature sensor 80, and there is a risk that the dynamic characteristics of the measurement signal in the temperature sensor 80 will be impaired.

[0034] In contrast, the temperature sensor 80 of the embodiment has two support points, and resonance is unlikely to occur in the temperature sensor 200. Therefore, according to the configuration and arrangement of the temperature sensor 80, it is possible to eliminate the risk of damage to the temperature sensor 80 due to Karman vortexes. In other words, by joining the temperature sensor 80 at two or more points, resonance does not occur, and the temperature sensor 80 can be configured to be thin without being damaged. In addition, the thinner the temperature sensor 80, the better the dynamic characteristics and the better the responsiveness. Therefore, according to the configuration of the temperature sensor 80 of the embodiment, while making the structure of the temperature measuring part TC thin, by joining at two or more points, there is no damage due to Karman vortexes caused by resonance, and the responsiveness is high, and the temperature of the gas in the joint 70 can be directly measured.

[0035] [Examples 1 to 3] Next, examples 1 to 3 of the temperature sensor 80 according to the embodiment will be described with reference to FIG. 3. FIGS. 3(a) to 3(c) are diagrams showing examples 1 to 3 of the temperature sensor 80 according to the embodiment. The temperature sensor 80 shown in FIGS. 3(a) to 3(c) uses a sheath temperature sensor. The temperature sensor 80 has a configuration in which a sheath thermocouple 82 (thermocouple wire) is placed inside an exterior sheath 81 and filled with an insulating material such as magnesium oxide 83. The sheath 81 is a cylindrical metal tube, and the material of the sheath 81 may be, for example, stainless steel (SUS316) or Inconel (NCF600). The material of the sheath 81 may be the same material as the joint 70 and / or the gas introduction pipe 24, or may be a different material. In Examples 1 to 3, the temperature sensor 80 according to the embodiment is a cylinder, but is not limited thereto. The temperature sensor 80 according to the embodiment may have any shape (for example, a rectangular column such as a rectangular parallelepiped or other shape) as long as it has a shape that suppresses Karman vortexes. The shape for suppressing the Karman vortex can be determined taking into consideration the matters disclosed in “Generation of Karman Vortex Street, Physics and Mathematics”, Research Institute for Mathematical Sciences Kokyuroku, Vol. 1776, 2012, pp. 28-42.

[0036] Example 1 3(a), two through holes 71, 72 are provided in joint 70, a temperature sensor 80 is inserted into the through holes 71, 72, and two locations (both ends) of the through holes 71, 72 are welded to join the temperature sensor 80 to the joint 70. A tip 84 of the temperature sensor 80 is closed and protrudes from the joint 70. The sheath thermocouple 82 is folded back within the sheath 81, and the temperature measuring part TC of the temperature sensor 80 is provided at the folded back part.

[0037] In this way, the temperature measuring part TC of the temperature sensor 80 is disposed inside the inner wall 70a of the joint 70 and does not contact the inner wall 70a. In each embodiment, the joint 70 may be a part of the gas inlet pipe 24, and the temperature measuring part TC may be disposed inside the inner wall of the gas inlet pipe 24. In other words, the temperature measuring part TC is disposed inside the inner wall 70a and does not contact the inner wall 70a. This allows the temperature sensor 80 to directly measure the temperature of the gas inside the gas inlet pipe 24.

[0038] Moreover, the temperature sensor of Example 1 passes through two through holes 71, 72 provided in the joint 70, and is joined to the joint 70 at two points, the through holes 71, 72. This prevents resonance from occurring, and prevents damage to the temperature sensor 80 due to Karman vortices.

[0039] Example 2 3(b), one through hole 71 is provided in the joint 70, the temperature sensor 80 is inserted into the through hole 71, and the tip 84 is brought into contact with the inner wall 70a of the joint 70 facing the through hole 71. In the second embodiment, the through hole 71 and the inner wall 70a with which the tip 84 is in contact are welded at two locations (both ends) to join the temperature sensor 80 to the joint 70. The sheath thermocouple 82 is folded back within the sheath 81 of the temperature sensor 80, and the temperature measuring part TC of the temperature sensor 80 is provided at the folded back part.

[0040] In the temperature sensor 80 of the second embodiment, the temperature measuring part TC is also disposed inside the inner wall 70a and is not in contact with the inner wall 70a. This allows the temperature sensor 80 to directly measure the temperature of the gas inside the gas introduction pipe 24.

[0041] Moreover, the temperature sensor of the second embodiment is joined to the joint 70 at two points, the through hole 71 and the inner wall 70a. This prevents resonance from occurring and prevents damage to the temperature sensor 80 due to Karman vortices.

[0042] Example 3 In Example 3 shown in Fig. 3(c), two through holes 71, 72 are provided in the joint 70, the temperature sensor 80 is inserted into the through holes 71, 72, and the through holes 71, 72 are welded at two locations to join the temperature sensor 80 to the joint 70. The tip of the temperature sensor 80 in Example 3 is open and protrudes from the joint 70. The sheath thermocouple 82 passes through the sheath 81 of the temperature sensor 80 as a single wire, and the sheath thermocouple 82 is provided with a temperature measuring unit TC. The temperature measuring unit TC is disposed inside the inner wall 70a and does not contact the inner wall 70a.

[0043] In the temperature sensor 80 of the first embodiment having such a configuration, the temperature measuring part TC is disposed inside the inner wall 70a of the joint 70. This allows the temperature sensor 80 to directly measure the temperature of the gas inside the gas introduction pipe 24.

[0044] Moreover, the temperature sensor of Example 3 passes through two through holes 71, 72 provided in the joint 70, and is joined to the joint 70 at two points, the through holes 71, 72. This prevents resonance from occurring, and prevents damage to the temperature sensor 80 due to Karman vortices.

[0045] (Common matters) The temperature sensor 80 according to each embodiment is preferably configured to be disposed perpendicular to the flow of gas flowing inside the gas inlet pipe 24 (joint 70). Here, perpendicular to the flow of gas is not limited to 90° to the flow of gas, but includes, for example, a case where the sensor is disposed at an angle of about 2° to 3° from 90°. In addition, the temperature measuring part TC of the temperature sensor 80 is preferably provided at the center in the radial direction of the gas inlet pipe 24 (joint 70). This allows the gas temperature to be measured with high accuracy. However, the temperature measuring part TC is not limited to being disposed on the central axis Ax of the gas inlet pipe 24 (joint 70) in FIG. 2, but includes a case where the temperature measuring part TC is disposed at an angle radially shifted from the central axis Ax. However, the temperature measuring part TC does not come into contact with the inner wall of the gas inlet pipe 24 (joint 70).

[0046] By configuring the temperature sensor 80 to be joined to the gas inlet pipe 24 at two or more points, the mechanical strength is improved, preventing damage due to resonance caused by Kármán vortices and the like, and also enabling the diameter of the sheathed thermocouple to be made thinner.

[0047] The outer diameter of the sheath 81 may be, for example, about 0.08 mm. By thinning the temperature sensor 80 in this manner, it is possible to reduce the heat capacity of the temperature sensor 80. This makes it possible to increase the responsiveness and improve the measurement accuracy.

[0048] [Examples 1 and 2] Next, examples 1 and 2 of the heater 100 according to the embodiment will be described with reference to Fig. 4. Figs. 4(a) and (b) are diagrams showing examples 1 and 2 of the heater 100 according to the embodiment.

[0049] The heater 100 according to the embodiment is installed in the gas inlet pipe 24 and the joint 70. By installing the heater 100 in the gas inlet pipe 24, the temperature of the gas flowing through the gas inlet pipe 24 can be controlled using the heater 100. This makes it possible to suppress variations in process performance caused by the gas temperature. However, the heater 100 does not necessarily have to be installed in the gas inlet pipe 24 or the like.

[0050] The heater 100 may be a sheath heater in which a heating element is held in a metal sheath and the gap is filled with an insulating material having good thermal conductivity. As shown in Figs. 4(a) and (b), the heater 100 is configured to be arranged horizontally to the gas flow inside the gas inlet pipe 24. The heater 100 may be joined to the gas inlet pipe 24 at one or both ends. In the example of Fig. 4(a), a through hole 70b is opened in a joint 70 provided with a temperature sensor 80. The heater 100 is passed through the through hole 70b, and the heater 100 is bent at a substantially right angle inside the joint 70 to be arranged inside the gas inlet pipe 24 so that the longitudinal direction of the heater 100 is horizontal to the gas flow. The heater 100 is welded to the joint 70 at the position of the through hole 70b. In this case, one end 100a of the heater 100 is exposed from the through hole 70b. In addition, when the longitudinal direction of the heater 100 is arranged horizontally to the gas flow, this includes not only the case where the longitudinal direction of the heater 100 is exactly the same direction as the gas flow, but also the case where the heater 100 is arranged in approximately the same direction, for example, at an angle of about 2° to 3° to the central axis Ax in Figure 2.

[0051] In the example of Fig. 4(b), through holes 70b, 75a are opened in the joint 70 provided with the temperature sensor 80 and in the joint 75 provided in the gas inlet pipe 24 at a position away from the joint 70 by an amount corresponding to the length of the heater 100. The heater 100 is passed through the through holes 70b, 75a, bent at a substantially right angle within the joint 70, and disposed so as to be horizontal to the gas flow inside the gas inlet pipe 24. The heater 100 is welded to the joint 70 at the positions of the through holes 70b, 75a. In this case, both ends 100a, 100b of the heater 100 are exposed from the through holes 70b, 75a.

[0052] 4(a) and (b), the diameter (thickness) of the inner wall 24a of the gas introduction pipe 24 is about 4.4π, and the heater 100 with a diameter (thickness) of about 2π is inserted inside. In this way, by arranging the heater 100 with a certain thickness horizontally to the gas flow, damage to the heater 100 due to Karman vortexes can be prevented.

[0053] In addition, heat transfer is difficult in laminar flow. Therefore, by making the heater 100 thick to some extent, turbulence is generated inside the gas introduction pipe 24, making it easier to transfer heat, and thus the heating efficiency of the heater 100 can be improved.

[0054] [Temperature control method] Next, a temperature control method according to an embodiment performed using the above-described semiconductor manufacturing apparatus 1 will be described with reference to Fig. 5. Fig. 5 is a flowchart showing the temperature control method according to the embodiment. The temperature control method of the present disclosure is executed by a control unit 90.

[0055] In this process, first, in step S1, the control unit 90 acquires the gas temperature by the temperature measuring unit TC of the temperature sensor 80 arranged in the gas introduction pipe .

[0056] Next, in step S2, the control unit 90 controls the current supplied to the heater 100 based on the measured gas temperature so that the temperature of the gas in the gas inlet pipe 24 becomes or approaches the target temperature. The heater 100 is disposed in the gas inlet pipe 24 and configured to directly heat the gas in the gas inlet pipe 24.

[0057] Next, in step S3, the control unit 90 determines whether the process has ended. The control unit 90 repeats the processing of steps S1 to S3 at predetermined time intervals until it determines that the process has ended, and ends this processing when it determines that the process has ended.

[0058] As described above, the temperature sensor 80 of the present disclosure can measure the temperature of the gas in the gas inlet pipe 24. This allows the temperature of the gas in the processing vessel 10 to be predicted with higher accuracy. Furthermore, by making the temperature sensor 80 thin and fixing it at two or more points, damage to the temperature sensor 80 due to Karman vortexes can be prevented, and the dynamic characteristics can be improved by reducing the heat capacity. Furthermore, the gas temperature can be controlled by disposing the heater 100 in the gas inlet pipe 24.

[0059] In processes such as film formation performed in the semiconductor manufacturing apparatus 1, temperature, gas concentration, and pressure are main parameters that affect the substrate process. Therefore, in addition to the temperature inside the processing vessel 10 that has been measured by the temperature sensor 60, in the present disclosure, the temperature sensor 80 and the heater 100 are used to measure the gas temperature near the gas inlet of the processing vessel 10, and the gas temperature is controlled by the heater 100. In this way, the gas temperature is actively controlled based on the results of the film formation process, thereby improving the stability of the process and contributing to reducing the heat load inside the processing vessel 10.

[0060] The temperature sensor 80 and the heater 100 can be arranged not only in the gas inlet pipe 24 but also in any gas pipe such as the external pipe 23 of the gas supply unit 20. The number of temperature sensors 80 and heaters 100 is not limited to one. This makes it possible to collect data on the gas temperature inside the gas inlet pipe 24 and other gas pipes, as the temperature is one of the important parameters that affect the process. Therefore, the data of the temperature sensor 80 can be analyzed together with data from various other temperature sensors such as the temperature sensor 60 inside the processing vessel 10, and can be used for various improvements of the semiconductor manufacturing equipment 1, such as process conditions.

[0061] The semiconductor manufacturing apparatus and the temperature control method according to the presently disclosed embodiments should be considered as illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without contradiction, and can be combined without contradiction.

[0062] The semiconductor manufacturing equipment disclosed herein can be applied to any type of equipment, including Atomic Layer Deposition (ALD) equipment, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0063] Furthermore, the semiconductor manufacturing apparatus of the present disclosure may be either a processing apparatus that uses plasma or a processing apparatus that does not use plasma, so long as it is an apparatus that performs a predetermined process on a substrate (e.g., a film formation process, an etching process, etc.). Furthermore, the semiconductor manufacturing apparatus of the present disclosure may be any of a single-wafer apparatus that processes substrates one by one, a batch apparatus that processes a plurality of substrates at once, and a semi-batch apparatus that processes a plurality of substrates at once, which is less than the number of substrates that can be processed at once by a batch apparatus. [Explanation of symbols]

[0064] 1. Semiconductor manufacturing equipment 10 Processing vessel 14 Injector 20 Gas supply section 24 Gas inlet piping 30 Exhaust section 40 Heating section 50 Cooling section 60 Temperature Sensor 80 Temperature Sensor 90 Control section 100 Heater

Claims

1. a gas introduction pipe connected to a processing vessel of a semiconductor manufacturing apparatus and configured to introduce a gas into the processing vessel whose pressure is reduced; a temperature sensor provided in the gas inlet pipe and configured to measure a temperature of the gas inside the gas inlet pipe; a heater disposed inside the gas inlet pipe and configured to heat the gas inside the gas inlet pipe; having the temperature sensor is disposed at a joint of the gas introduction pipe connected to an injector installed in the processing vessel, The heater is installed at the joint, inserted from the joint into a pipe constituting the gas introduction pipe, and extends along the extension direction of the pipe.

2. The temperature sensor has a temperature measuring portion disposed inside an inner wall of the gas introduction pipe.

2. The semiconductor manufacturing apparatus according to claim 1.

3. The temperature sensor is connected to the gas inlet pipe at two or more points.

3. The semiconductor manufacturing apparatus according to claim 1 or 2.

4. The temperature sensor is configured to pass through two through holes provided in the gas introduction pipe. The semiconductor manufacturing apparatus according to any one of claims 1 to 3.

5. The temperature sensor is configured to pass through one through hole provided in the gas inlet pipe and have a tip portion abutting on an inner wall of the gas inlet pipe. The semiconductor manufacturing apparatus according to any one of claims 1 to 4.

6. The temperature sensor is configured to be disposed perpendicular to the flow of gas flowing inside the gas introduction pipe. The semiconductor manufacturing apparatus according to any one of claims 1 to 5.

7. The heater is connected to the gas introduction pipe at one or both ends. The semiconductor manufacturing apparatus according to any one of claims 1 to 6.

8. A temperature control method to be performed in a semiconductor manufacturing apparatus having a gas inlet pipe connected to a processing vessel of the semiconductor manufacturing apparatus and introducing a gas into a depressurized interior of the processing vessel, a temperature sensor provided in the gas inlet pipe and configured to measure a temperature of the gas inside the gas inlet pipe, and a heater disposed inside the gas inlet pipe and configured to heat the gas inside the gas inlet pipe, comprising: the temperature sensor is disposed at a joint of the gas introduction pipe connected to an injector installed in the processing vessel, the heater is installed at the joint, inserted from the joint into a pipe constituting the gas introduction pipe, and extends along an extension direction of the pipe; The temperature control method is measuring the temperature of the gas flowing inside the gas inlet pipe using the temperature sensor; a step of controlling a current supplied to the heater based on the measured temperature of the gas so that the temperature of the gas inside the gas inlet pipe becomes a target temperature or approaches the target temperature; A temperature control method comprising:

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