Semiconductor wafer mounting substrate, dicing tape, and dicing die bond film

Abstract

To provide a substrate for mounting a semiconductor wafer, which is relatively hard to tear in an expanding step and can relatively sufficiently cut a die bond layer.SOLUTION: A substrate for mounting a semiconductor wafer has a breaking elongation at -15°C of 300% or more and a breaking strength at -15°C of 20 N or more.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to a semiconductor wafer mounting substrate, a dicing tape, and a dicing die bond film. [Background technology]

[0002] 2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, it is known to use a dicing tape or a dicing die bond film to obtain a semiconductor chip for die bonding. The dicing tape comprises a substrate (substrate for mounting a semiconductor wafer) and an adhesive layer laminated on the substrate, and the dicing die bond film comprises a die bond layer (die bond film) releasably laminated on the adhesive layer of the dicing tape.

[0003] As a method for obtaining a semiconductor chip (die) for die bonding using the dicing die bond film, the following Patent Document 1 discloses a method including a half-cut process in which a groove is formed in a semiconductor wafer to process the semiconductor wafer into a chip (die) by a fracturing process, a back-grind process in which the semiconductor wafer after the half-cut process is ground to reduce its thickness, a mounting process in which one surface (the surface opposite to the circuit surface) of the semiconductor wafer after the back-grind process is attached to a die-bonding layer and the semiconductor wafer is fixed to a dicing tape, an expanding process in which the space between the half-cut semiconductor chips is expanded, a kerf maintaining process in which the space between the semiconductor chips is maintained, and a pick-up process in which the die-bonding layer and the adhesive layer are peeled off to remove the semiconductor chip with the die-bonding layer still attached. In the expanding step, the die bond layer is cut into pieces having sizes corresponding to the sizes of the individual semiconductor chips.

[0004] In a method for obtaining semiconductor chips for die bonding using the above-mentioned dicing tape or dicing die bond film, the following Patent Document 2 discloses that by using a dicing tape having specific physical properties (a dicing tape having an initial elastic modulus of 200 MPa or more and 380 MPa or less at -10°C and a Tan δ (loss elastic modulus / storage elastic modulus) of 0.080 or more and 0.3 or less at -10°C) and performing the expanding step under a low-temperature condition of -15 to 5°C, the cleavability (e.g., ease of cleavage and uniformity) of the semiconductor wafer into a plurality of semiconductor chips and the cleavability of the die bond layer attached to the semiconductor wafer into a size corresponding to the size of the plurality of semiconductor chips can be improved in the expanding step. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2019-9203 A [Patent Document 2] JP 2015-185591 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, even if the dicing tape is configured as described in Patent Document 1 above, in the expanding process, it may not be possible to sufficiently cut the die bond layer to a size corresponding to the size of the multiple semiconductor chips. In addition, in order to realize the miniaturization of semiconductor devices, which has been increasingly demanded in recent years, when a plurality of semiconductor chips each having a cleaved die bond layer are mounted on a wiring board via the die bond layer, a mounting form called FOD (Film On Die) is adopted in which one of the plurality of semiconductor chips is mounted on the wiring board via the die bond layer, and then a plurality of other semiconductor chips are mounted so as to overlap the one semiconductor chip in a plan view and be higher than the one semiconductor chip, and the one semiconductor chip is covered with the die bond layer provided on the semiconductor chip located at the lowest position among the plurality of other semiconductor chips; and a mounting form called FOW (Film On Wire) is adopted in which, for a one semiconductor chip that is attached to a wiring board via a die bond layer and wire-bonded to the wiring board by a bonding wire, the whole of the one semiconductor chip and a part or all of the bonding wire are embedded in another die bond layer (embedded in another die bond layer), and another semiconductor chip is attached to the wiring board via the other die bond layer. Here, in FOD, the thickness of the die bond layer covering one semiconductor chip mounted on the wiring substrate is relatively thick, at about 100 μm to 140 μm, and in FOW, the thickness of the other die bond layer covering the entire semiconductor chip mounted on the semiconductor substrate and some or all of the bonding wires is also relatively thick, at about 40 μm to 80 μm, so it is considered that the problem of the breakability of the die bond layer in the expanding process becomes greater. In view of the above circumstances, there is a demand for a die bond layer that exhibits more satisfactory cleavability in the expanding step, but it cannot be said that sufficient research has been carried out on this matter yet.

[0007] There is also a concern that the substrate may be torn during the expanding step.

[0008] Incidentally, it is believed that the above-mentioned problems occur in the same manner in all cases where the above-mentioned expanding step is adopted in the method of obtaining semiconductor chips for die bonding using the dicing die bond film.

[0009] Therefore, an object of the present invention is to provide a substrate for mounting a semiconductor wafer that is relatively resistant to tearing during the expanding process and that can relatively satisfactorily cleave the die bond layer, as well as a dicing tape and a dicing die bond film that include the substrate for mounting a semiconductor wafer. [Means for solving the problem]

[0010] As a result of intensive research by the present inventors, it has been found that a semiconductor wafer mounting base material has a breaking elongation of 300% or more at -15°C and a breaking strength of 20N at -15°C. / 10mm As a result of the above, it was found that the substrate for mounting a semiconductor wafer is relatively difficult to break during the expanding process, and that the die bond layer disposed on the substrate for mounting a semiconductor wafer can be relatively sufficiently fractured, which led to the invention.

[0011] That is, the semiconductor wafer mounting substrate according to the present invention is The breaking elongation at -15°C is 300% or more, and the breaking strength at -15°C is 20N / 10mm That's all.

[0012] According to such a configuration, in the expanding step, the semiconductor wafer mounting base material is relatively difficult to break, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting base material) can be relatively satisfactorily broken.

[0013] In the semiconductor wafer mounting base material, It is preferable that the insulating layer has at least one layer containing an elastomer resin.

[0014] According to such a configuration, the semiconductor wafer mounting base material is more resistant to tearing in the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting base material) can be more sufficiently fractured.

[0015] In the semiconductor wafer mounting base material, The elastomer resin is preferably an olefin-based elastomer resin.

[0016] According to such a configuration, the semiconductor wafer mounting base material is more resistant to tearing in the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting base material) can be more sufficiently fractured.

[0017] In the semiconductor wafer mounting base material, The thickness is preferably 90 μm or more and 130 μm or less.

[0018] According to such a configuration, the semiconductor wafer mounting base material is more resistant to tearing in the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting base material) can be more sufficiently fractured.

[0019] The dicing tape according to this embodiment is A substrate; A pressure-sensitive adhesive layer laminated on the substrate, The substrate is any one of the substrates for mounting a semiconductor wafer described above.

[0020] According to such a configuration, the semiconductor wafer mounting base material is relatively difficult to break in the expanding step, and the die bond layer (the die bond layer disposed on the pressure-sensitive adhesive layer) can be relatively satisfactorily broken.

[0021] The dicing die bond film according to this embodiment is a dicing tape having a substrate and a pressure-sensitive adhesive layer laminated thereon; a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape; The substrate is any one of the substrates for mounting a semiconductor wafer described above.

[0022] According to this configuration, the semiconductor wafer mounting base material is relatively difficult to break in the expanding step, and the die bond layer can be relatively sufficiently broken. Effect of the Invention

[0023] According to the present invention, it is possible to provide a substrate for mounting a semiconductor wafer that is relatively resistant to tearing during an expanding process and that can relatively satisfactorily cleave a die bond layer, as well as a dicing tape and a dicing die bond film that include the substrate for mounting a semiconductor wafer. [Brief description of the drawings]

[0024] [Figure 1] 1 is a cross-sectional view showing a configuration of a dicing tape according to an embodiment of the present invention. [Diagram 2] 1 is a cross-sectional view showing a configuration of a dicing die bond film according to one embodiment of the present invention. [Figure 3A] 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a manufacturing method of a semiconductor integrated circuit. [Figure 3B] 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a manufacturing method of a semiconductor integrated circuit. [Figure 3C] 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a manufacturing method of a semiconductor integrated circuit. [Figure 3D] 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a manufacturing method of a semiconductor integrated circuit. [Figure 4A] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor integrated circuit. [Figure 4B] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor integrated circuit. [Figure 5A]1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 5B] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 5C] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 6A] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 6B] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 7] 1A to 1C are cross-sectional views each showing a kerf maintaining step in a method for manufacturing a semiconductor integrated circuit. [Figure 8] 1A to 1C are cross-sectional views each showing a pickup step in a method for manufacturing a semiconductor integrated circuit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, one embodiment of the present invention will be described.

[0026] [Substrate for mounting semiconductor wafers] The semiconductor wafer mounting substrate according to this embodiment has a breaking elongation of 300% or more at -15°C and a breaking strength of 20N at -15°C. / 10mm That's all. The semiconductor wafer mounting substrate according to this embodiment is used as a substrate for dicing tape and dicing die bond film, which are used as manufacturing aids for manufacturing semiconductor integrated circuits, as described below.

[0027] The inventors believe that the reason why the semiconductor wafer of this embodiment has the above-mentioned configuration, and therefore the substrate for mounting the semiconductor wafer is relatively resistant to tearing during the expansion process (the expansion process when a semiconductor is manufactured using a dicing tape and a dicing die bond film as manufacturing aids) and the die bond layer (the die bond layer disposed on the substrate for mounting the semiconductor wafer) can be relatively satisfactorily broken, is as follows.

[0028] When a semiconductor wafer and a die bond layer attached to the semiconductor wafer are fractured to obtain a plurality of semiconductor chips and die bond layers diced into pieces having sizes corresponding to the sizes of the plurality of semiconductor chips, in order to ensure sufficient spacing between adjacent semiconductor chips and between the diced die bond layers, it is preferable that the semiconductor wafer mounting substrate in the dicing tape is sufficiently stretched (stretched) in the expansion process (e.g., expanding at a low temperature (e.g., −15° C.)). On the other hand, as described above, when the semiconductor wafer mounting substrate is being stretched in the expanding process, it is necessary to prevent the semiconductor wafer mounting substrate from breaking, and it is necessary to sufficiently fracture the die bond layer disposed on the semiconductor wafer mounting substrate. From this viewpoint, it is considered that the semiconductor wafer mounting base needs to have appropriate hardness in addition to appropriate elasticity, and needs to be easily subjected to an appropriate amount of stress. The semiconductor wafer mounting substrate according to this embodiment has a breaking elongation of 300% or more at -15°C and a breaking strength of 20N or less at -15°C. / 10mm For the above reasons, namely, since the breaking elongation at -15°C and breaking strength at -15°C have appropriate values, the present inventors believe that in addition to appropriate elasticity, the substrate has appropriate hardness and is easily subjected to appropriate stress, thereby preventing the substrate from breaking and enabling the die bond layer disposed on the substrate to be sufficiently fractured.

[0029] In addition, by appropriately setting the materials constituting the semiconductor wafer mounting substrate, the layer structure of the semiconductor wafer mounting substrate, and the thickness of the semiconductor wafer mounting substrate, or by appropriately adjusting the ratio of multiple materials constituting the semiconductor wafer mounting substrate when multiple materials are used, the semiconductor wafer mounting substrate can be made to have a breaking elongation of 300% or more at -15°C and a breaking strength of 20N or less at -15°C. / 10mm It may be the above.

[0030] The breaking elongation at -15°C and the breaking strength at -15°C can be determined as follows. Specifically, the breaking elongation is measured by using a dicing tape having a length of 120 mm (measurement length, L0) and a width of 10 mm as a test piece, and pulling the test piece in the longitudinal direction using a tensile tester (Autograph AG-IS, manufactured by Shimadzu Corporation) under conditions of a temperature of -15°C, a chuck distance of 50 mm, and a pulling speed of 1000 mm / min, and measuring the length (L1) at which the test piece breaks. Then, the breaking elongation E at −15° C. is calculated based on the following formula. Breaking elongation E = (L1-L0) / L0 x 100 The breaking strength can be determined by measuring the force applied when the test piece breaks when a tensile test is performed under the same conditions as described above using the test piece and the tensile tester.

[0031] The semiconductor wafer mounting substrate according to the present embodiment contains a resin. Examples of the resin contained in the semiconductor wafer mounting substrate include polyolefin resin, polyester resin, polyurethane resin, polycarbonate resin, polyether ether ketone resin, polyimide resin, polyetherimide resin, polyamide resin, wholly aromatic polyamide resin, polyvinyl chloride resin, polyvinylidene chloride, polyphenyl sulfide, fluororesin, cellulose-based resin, silicone resin, EVA resin (ethylene vinyl acetate copolymer resin), ionomer resin, and elastomer. The semiconductor wafer mounting substrate according to this embodiment may contain one type of the above-mentioned resin, or may contain two or more types. As described below, when the adhesive layer laminated on the substrate for mounting a semiconductor wafer contains an ultraviolet-curable adhesive, the substrate for mounting a semiconductor wafer is preferably configured to be ultraviolet-transparent. Of the above resins, the semiconductor wafer mounting base material according to this embodiment preferably contains an EVA resin or an elastomer, and more preferably contains an elastomer.

[0032] Examples of the elastomer resin include various known elastomer resins such as styrene-based elastomer resins, olefin-based elastomer resins, polyester-based elastomer resins, and polyurethane-based elastomer resins. Of these, it is preferable to use an olefin-based elastomer resin, and of the olefin-based elastomer resins, it is preferable to use a propylene-based elastomer resin. A commercially available example of a propylene-based elastomer resin is Vistamax 3980 manufactured by ExxonMobil Chemical Company.

[0033] The substrate for mounting a semiconductor wafer according to this embodiment may have a single-layer structure or a laminated structure. When it has a laminated structure, it preferably has a layer containing an elastomer resin (hereinafter referred to as an elastomer layer) or a layer containing an EVA resin having a vinyl acetate content of 20% by mass or more (hereinafter referred to as a first EVA resin), and among these, it is more preferable that it has an elastomer layer. In addition, when the substrate for mounting a semiconductor wafer according to this embodiment has a single-layer structure, the substrate for mounting a semiconductor wafer preferably contains an EVA resin, and among the EVA resins, it is preferable that the substrate contains an EVA resin having a vinyl acetate content of 10% by mass. The vinyl acetate content of the EVA resin can be measured in accordance with JIS K7192:1999. The first EVA resin may be Evaflex (registered trademark) EV250 manufactured by Dow Mitsui Polychemicals. The semiconductor wafer mounting substrate may be obtained by non-stretch molding or by stretch molding, but is preferably obtained by stretch molding.

[0034] The elastomer layer contains an elastomer resin, and preferably contains, in addition to the elastomer resin, an EVA resin having a vinyl acetate content of more than 10% by mass and not more than 30% by mass (hereinafter referred to as a second EVA resin). Since the elastomer layer contains an elastomer resin and a second EVA resin, the elastomer layer has relatively high heat shrinkability, and therefore the kerf can be relatively well maintained in the kerf maintaining process described below, and the strength is relatively high, making it possible to smoothly cut the semiconductor wafer. When the elastomer layer contains an elastomer resin and a second EVA resin, the elastomer resin is preferably contained in an amount of 50% by mass or more and 90% by mass or less, and more preferably 60% by mass or more and 80% by mass or less. The second EVA resin is preferably contained in an amount of 10% by mass or more and 50% by mass or less, and more preferably 20% by mass or more and 40% by mass or less. Furthermore, the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) is preferably 0.1 or more, more preferably 0.25 or more, and is preferably 1.0 or less, more preferably 0.67 or less. A commercially available product of the second EVA resin is Evaflex (registered trademark) P1007 manufactured by Dow Mitsui Polychemicals.

[0035] When the substrate for mounting a semiconductor wafer has a laminated structure, the substrate for mounting a semiconductor wafer may be configured by laminating a plurality of elastomer layers, or may be configured to include an elastomer layer and a layer that does not contain an elastomer resin (hereinafter referred to as a non-elastomer layer). In this specification, the elastomer layer refers to a low modulus layer having a lower tensile storage modulus at room temperature (23° C.) than that of a non-elastomer layer. The elastomer layer may have a tensile storage modulus of 10 MPa or more and 100 MPa or less at room temperature, and the non-elastomer layer may have a tensile storage modulus of 200 MPa or more and 500 MPa or less at room temperature. The tensile storage modulus at room temperature refers to a value measured as follows. Specifically, a film having a length of 40 mm and a width of 10 mm is used as a test piece, and the tensile storage modulus of the test piece is measured using a solid viscoelasticity measuring device (e.g., Model RSAIII, manufactured by Rheometric Scientific) under conditions of a frequency of 1 Hz, a strain of 0.1%, a heating rate of 10°C / min, and a chuck distance of 22.5 mm in a temperature range of -50°C to 100°C. At that time, the value at room temperature (23°C) is read, so that the tensile storage modulus at room temperature can be obtained. The measurement is carried out by pulling the test piece in the MD direction (resin flow direction).

[0036] In the configuration in which a plurality of elastomer layers are laminated, it is preferable that two or more elastomer layers are laminated, and it is particularly preferable that three elastomer layers are laminated. In the structure in which two elastomer layers are laminated, the ratio T1 (second layer / first layer) of the thickness of the layer that will be on the outside when wound up and stored (hereinafter referred to as the first layer) to the thickness of the layer that will be on the inside when wound up and stored (hereinafter referred to as the second layer) is preferably 5 or more, more preferably 10 or more. Moreover, T1 is preferably 30 or less, more preferably 20 or less. In the structure in which three elastomer layers are laminated, if the layer that will be the innermost when rolled up and stored (the layer on the opposite side of the second layer from the side on which the first layer is laminated) is called the third layer, the ratio T3 of the layer thickness of the third layer to the layer thickness of the second layer (second layer / third layer) is preferably 5 or more, more preferably 7 or more. Moreover, T3 is preferably 20 or less, more preferably 15 or less. Furthermore, in such a three-layer structure, the ratio T2 of the layer thickness of the first layer to the layer thickness of the second layer (second layer / first layer) is preferably 5 or more, more preferably 7 or more. Moreover, T2 is preferably 20 or less, more preferably 15 or less. In a configuration in which two or more elastomer layers are laminated, the outermost layer (the first layer) that is the outermost layer when rolled up and stored preferably contains an antistatic agent, which can prevent the outermost layer from being charged with static electricity. The innermost layer (the third layer in the case of a three-layer structure), which is the innermost layer when the film is wound and stored, may contain an antistatic agent. The outermost layer preferably contains 10% by mass or more, and more preferably 20% by mass or more, of the antistatic agent relative to the total mass of the resin contained in the outermost layer. The outermost layer preferably contains 40% by mass or less, and more preferably 30% by mass or less, of the antistatic agent based on the total mass of the resin contained in the outermost layer. Furthermore, when the innermost layer contains an antistatic agent, it is preferable that the antistatic agent is contained in the same mass ratio as above.

[0037] In the configuration including the elastomer layer and the non-elastomer layer, the non-elastomer layer preferably includes a polypropylene resin that is a polymerization product of a metallocene catalyst (hereinafter, referred to as a metallocene PP resin). Examples of the metallocene PP resin include a propylene / α-olefin copolymer that is a polymerization product of a metallocene catalyst. An example of a commercially available metallocene PP resin is Wintech WXK1223 manufactured by Japan Polypropylene Corporation. The non-elastomer layer may contain an ionomer resin, and by containing an ionomer resin, the non-elastomer layer has improved elasticity and flexibility in a low temperature range. When the non-elastomer layer contains a metallocene PP resin and an ionomer resin, the metallocene PP resin is preferably contained in an amount of 50% by mass or more and 90% by mass or less, and more preferably 60% by mass or more and 80% by mass or less. The ionomer resin is contained in an amount of preferably 10% by mass or more and 50% by mass or less, and more preferably 20% by mass or more and 40% by mass or less. Furthermore, the ratio W2 of the mass of the metallocene PP resin to the mass of the ionomer resin (ionomer resin / metallocene PP resin) is preferably 0.1 or more, and more preferably 0.25 or more. Moreover, W2 is preferably 1.0 or less, and more preferably 0.67 or less.

[0038] Here, the metallocene catalyst is a catalyst consisting of a transition metal compound of Group 4 of the periodic table containing a ligand having a cyclopentadienyl skeleton (so-called metallocene compound) and a cocatalyst capable of activating the metallocene compound to a stable ionic state by reacting with the metallocene compound, and optionally containing an organoaluminum compound. The metallocene compound is a bridged metallocene compound that enables stereoregular polymerization of propylene.

[0039] Among the propylene / α-olefin copolymers which are polymerization products of the metallocene catalyst, propylene / α-olefin random copolymers which are polymerization products of the metallocene catalyst are preferred, and among the propylene / α-olefin random copolymers which are polymerization products of the metallocene catalyst, those selected from propylene / α-olefin random copolymers having 2 carbon atoms which are polymerization products of the metallocene catalyst, propylene / α-olefin random copolymers having 4 carbon atoms which are polymerization products of the metallocene catalyst, and propylene / α-olefin random copolymers having 5 carbon atoms which are polymerization products of the metallocene catalyst are preferred, and among these, propylene / ethylene random copolymers which are polymerization products of the metallocene catalyst are optimal.

[0040] In addition, when the substrate for mounting a semiconductor wafer has a laminated structure of an elastomer layer and a non-elastomer layer, the substrate for mounting a semiconductor wafer is preferably obtained by co-extrusion molding in which a resin constituting the elastomer layer and a resin constituting the non-elastomer layer are co-extruded to form a laminated structure of the elastomer layer and the non-elastomer layer. As the co-extrusion molding, any appropriate co-extrusion molding generally performed in the production of films, sheets, etc. can be adopted. Among the co-extrusion moldings, it is preferable to adopt an inflation method or a co-extrusion T-die method, since the substrate for mounting a semiconductor wafer can be efficiently obtained.

[0041] When the substrate for mounting a semiconductor wafer having a laminated structure is obtained by co-extrusion molding, the elastomer layer and the non-elastomer layer are heated and contacted in a molten state, and therefore it is preferable that the difference in melting point between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer is small. As described above, the small melting point difference between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer prevents the resin with the lower melting point from being subjected to excessive heat, thereby preventing the resin with the lower melting point from being thermally deteriorated and generating by-products. In addition, the viscosity of the resin with the lower melting point from being excessively reduced, which causes lamination defects between the elastomer layer and the non-elastomer layer, can be prevented. The melting point difference between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer is preferably 0°C or more and 70°C or less, more preferably 0°C or more and 55°C or less. The melting points of the resin contained in the elastomer layer and the resin contained in the non-elastomer can be measured by differential scanning calorimetry (DSC) analysis, for example, by using a differential scanning calorimeter (manufactured by TA Instruments, model DSC Q2000) to increase the temperature to 200°C at a rate of 5°C / min under a nitrogen gas flow and determining the peak temperature of the endothermic peak. In addition, when the elastomer layer or the non-elastomer layer contains multiple resins, when the melting points of the resins contained in the elastomer layer and the resins contained in the non-elastomer layer are measured using a differential scanning calorimeter, multiple peaks corresponding to each resin are detected. In such a case, the peak temperature of the two resins with the largest melting point difference is the melting point difference.

[0042] The thickness of the semiconductor wafer mounting substrate according to this embodiment is preferably 55 μm or more and 195 μm or less, more preferably 70 μm or more and 150 μm or less, and particularly preferably 90 μm or more and 130 μm or less. By having a thickness of 90 μm or more and 130 μm or less, the semiconductor wafer mounting substrate is more resistant to tearing during the process of stretching the semiconductor wafer mounting substrate (the expanding process and pick-up process when manufacturing semiconductors using dicing tape and dicing die bond film as manufacturing aids), and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be more satisfactorily broken. The thickness of the semiconductor wafer mounting substrate can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0043] [Dicing tape] Next, a dicing tape 10 according to the present embodiment will be described with reference to Fig. 1. In the description of the dicing tape 10, the description of parts that overlap with the above-described semiconductor wafer mounting substrate will not be repeated.

[0044] As shown in FIG. 1, a dicing tape 10 according to this embodiment includes a substrate 1 and a pressure-sensitive adhesive layer 2 laminated on the substrate 1. That is, in the dicing tape 10 according to this embodiment, the substrate 1 supports the pressure-sensitive adhesive layer 2. In the dicing tape 10 according to this embodiment, the substrate 1 is a semiconductor wafer mounting substrate according to this embodiment. As described above, the semiconductor wafer mounting substrate according to this embodiment has a breaking elongation of 300% or more at −15° C. and a breaking strength of 20 N at −15° C. / 10mm That's all.

[0045] The semiconductor wafer mounting substrate preferably has at least one layer containing an elastomer resin. In the semiconductor wafer mounting substrate, the elastomer resin is preferably an olefin-based elastomer resin. Furthermore, the thickness of the semiconductor wafer mounting base is preferably 90 μm or more and 130 μm or less.

[0046] The adhesive layer 2 contains an adhesive and adheres to the adhesive layer 2 to hold a semiconductor wafer to be diced into semiconductor chips.

[0047] The adhesive may be one whose adhesive strength can be reduced by an external action during use of the dicing tape 10 (hereinafter, referred to as a reduced-adhesion adhesive).

[0048] When a reduced-adhesion adhesive is used as the adhesive, the adhesive layer 2 can be used in a state where it exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesion state) and a state where it exhibits a relatively low adhesive strength (hereinafter referred to as a low-adhesion state) during the use of the dicing tape 10. For example, when a semiconductor wafer attached to the dicing tape 10 is subjected to cleavage, the high-adhesion state is used to prevent the multiple semiconductor chips separated by cleavage of the semiconductor wafer from lifting up or peeling off from the adhesive layer 2. On the other hand, in order to pick up the multiple semiconductor chips separated after cleavage of the semiconductor wafer, the low-adhesion state is used to make it easier to pick up the multiple semiconductor chips from the adhesive layer 2.

[0049] The reduced tack adhesive may be, for example, an adhesive that can be cured by exposure to radiation during use of the dicing tape 10 (hereinafter, referred to as a radiation-curable adhesive).

[0050] Examples of the radiation-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays. Among these, it is preferable to use an adhesive that is cured by irradiation with ultraviolet rays (ultraviolet-curable adhesive).

[0051] Examples of the radiation-curable adhesive include additive-type radiation-curable adhesives that contain a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or a radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.

[0052] The acrylic polymer includes a monomer unit derived from a (meth)acrylic acid ester, such as an alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, or an aryl (meth)acrylate.

[0053] The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. Any external crosslinking agent can be used as long as it can react with the acrylic polymer, which is the base polymer, to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking agents.

[0054] Examples of the radiation polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. The content of the radiation polymerizable monomer component or radiation polymerizable oligomer component in the radiation curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0055] The radiation-curable adhesive preferably contains a photopolymerization initiator, such as an α-ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, a thioxanthone compound, camphorquinone, a halogenated ketone, an acylphosphinoxide, or an acylphosphonate.

[0056] The pressure-sensitive adhesive layer 2 may contain, in addition to the above-mentioned components, a crosslinking accelerator, a tackifier, an antiaging agent, a colorant such as a pigment or a dye, and the like.

[0057] The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 45 μm or less, and even more preferably 5 μm or more and 40 μm or less. The thickness of the adhesive layer 2 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0058] [Dicing die bond film] Next, the dicing die bond film 20 according to this embodiment will be described with reference to Fig. 2. In the description of the dicing die bond film 20, the description of the portions overlapping with the above-mentioned semiconductor wafer mounting base material and dicing tape 10 will not be repeated.

[0059] As shown in Figure 2, the dicing die bond film 20 of this embodiment comprises a dicing tape 10 having an adhesive layer 2 laminated on a substrate 1, and a die bond layer 3 laminated on the adhesive layer 2 of the dicing tape 10. That is, in the dicing die bond film 20 according to this embodiment, the base material 1 supports the pressure-sensitive adhesive layer 2 and the die bond layer 3. In the dicing tape 10 according to this embodiment, the substrate 1 is a semiconductor wafer mounting substrate according to this embodiment. As described above, the semiconductor wafer mounting substrate according to this embodiment has a breaking elongation of 300% or more at −15° C. and a breaking strength of 20 N at −15° C. / 10mm That's all.

[0060] The semiconductor wafer mounting substrate preferably has at least one layer containing an elastomer resin. In the semiconductor wafer mounting substrate, the elastomer resin is preferably an olefin-based elastomer resin. Furthermore, the thickness of the semiconductor wafer mounting base is preferably 90 μm or more and 130 μm or less.

[0061] In the dicing die bond film 20 according to this embodiment, a semiconductor wafer is attached onto the die bond layer 3. When the semiconductor wafer is cut using the dicing die bond film 20, the die bond layer 3 is cut together with the semiconductor wafer. The die bond layer 3 is cut into pieces having sizes corresponding to the sizes of the individual semiconductor chips. This allows the semiconductor chips with the die bond layer 3 to be obtained.

[0062] The die bond layer 3 preferably has thermosetting properties. By making the die bond layer 3 contain at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group, the die bond layer 3 can be given thermosetting properties.

[0063] When the die bond layer 3 contains a thermosetting resin, examples of such a thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. Among these, it is preferable to use an epoxy resin.

[0064] Examples of epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins.

[0065] Examples of phenol resins used as curing agents for epoxy resins include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrenes such as polyparaoxystyrene.

[0066] When the die bond layer 3 contains a thermoplastic resin having a thermosetting functional group, for example, such a thermoplastic resin may be a thermosetting functional group-containing acrylic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin may be one containing a monomer unit derived from a (meth)acrylic acid ester. In the case of a thermosetting resin having a thermosetting functional group, a curing agent is selected depending on the type of the thermosetting functional group.

[0067] The die bond layer 3 may contain a thermosetting catalyst from the viewpoint of sufficiently proceeding with the curing reaction of the resin component and increasing the curing reaction rate. Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds.

[0068] The die bond layer 3 may contain a thermoplastic resin. The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 and polyamide 6,6, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, etc. The above thermoplastic resin may be used alone or in combination of two or more. As the above thermoplastic resin, acrylic resin is preferable from the viewpoint that it has few ionic impurities and high heat resistance, and therefore it is easy to ensure the connection reliability by the die bond layer.

[0069] The acrylic resin is preferably a polymer containing a monomer unit derived from a (meth)acrylic acid ester as the monomer unit having the largest mass ratio. Examples of the (meth)acrylic acid ester include an alkyl (meth)acrylic acid ester, a cycloalkyl (meth)acrylic acid ester, and an aryl (meth)acrylic acid ester. The acrylic resin may contain a monomer unit derived from another component copolymerizable with the (meth)acrylic acid ester. Examples of the other component include a functional group-containing monomer such as a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, an acrylamide, and an acrylonitrile, and various polyfunctional monomers. From the viewpoint of realizing high cohesive strength in the die bond layer, the acrylic resin is preferably a copolymer of a (meth)acrylic acid ester (particularly, a (meth)acrylic acid alkyl ester having an alkyl group with 4 or less carbon atoms), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth)acrylate.

[0070] The die bond layer 3 may contain one or more other components as necessary, such as a flame retardant, a silane coupling agent, and an ion trapping agent.

[0071] The thickness of the die bond layer 3 is not particularly limited, but is, for example, 1 μm or more and 180 μm or less. Such a thickness may be 20 μm or more and 160 μm or less, or 40 μm or more and 140 μm or less. The thickness of the die bond layer 3 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0072] The dicing die bond film 20 according to this embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. A specific example of the use of the dicing die bond film 20 will be described below. In the following, an example in which a dicing die bond film 20 in which the substrate 1 is a single layer is used will be described.

[0073] The method for manufacturing a semiconductor integrated circuit includes a half-cut process in which a groove is formed in the semiconductor wafer to process the semiconductor wafer into chips (dies) by a fracturing process, a back-grind process in which the semiconductor wafer after the half-cut process is ground to reduce its thickness, a mounting process in which one surface (the surface opposite to the circuit surface) of the semiconductor wafer after the back-grind process is attached to a die-bonding layer 3 and the semiconductor wafer is fixed to a dicing tape 10, an expanding process in which the interval between the half-cut semiconductor chips is expanded, a kerf maintaining process in which the interval between the semiconductor chips is maintained, a pick-up process in which the die-bonding layer 3 is peeled off from the adhesive layer 2 to take out the semiconductor chip (die) with the die-bonding layer 3 attached, and a die-bonding process in which the semiconductor chip (die) with the die-bonding layer 3 attached is attached to an adherend. When these processes are carried out, the dicing die-bonding film 20 of this embodiment is used as a manufacturing auxiliary tool.

[0074] In the half-cut process, as shown in FIG. 3A and FIG. 3B, a half-cut process is performed to cut the semiconductor integrated circuit into small pieces (dies). More specifically, a wafer processing tape T is attached to the surface opposite to the circuit surface of the semiconductor wafer W (see FIG. 3A). A dicing ring R is attached to the wafer processing tape T (see FIG. 3A). With the wafer processing tape T attached, a groove for division is formed (see FIG. 3B). In the back-grind process, as shown in FIG. 3C and FIG. 3D, the semiconductor wafer is ground to reduce its thickness. More specifically, a back-grind tape G is attached to the surface where the groove is formed, while the wafer processing tape T attached initially is peeled off (see FIG. 3C). With the back-grind tape G attached, the semiconductor wafer W is ground until it reaches a predetermined thickness (see FIG. 3D).

[0075] 4A and 4B, in the mounting process, after a dicing ring R is attached to the adhesive layer 2 of the dicing tape 10, a half-cut semiconductor wafer W is attached to the exposed surface of the die bond layer 3 (see FIG. 4A). Then, the backgrind tape G is peeled off from the semiconductor wafer W (see FIG. 4B).

[0076] In the expanding step, as shown in Figs. 5A to 5C, the dicing ring R is fixed to a holder H of an expanding device. The dicing die bond film 20 is pushed up from below by a push-up member U provided in the expanding device, so that the dicing die bond film 20 is stretched so as to be expanded in the planar direction (see Fig. 5B). As a result, the half-cut semiconductor wafer W is cleaved under specific temperature conditions. The above temperature conditions are, for example, -15 to 25°C, preferably -15 to 10°C, and more preferably -15 to 0°C. The expanded state is released by lowering the push-up member U (see Fig. 4C). 6A and 6B, in the expanding step, the dicing tape 10 is stretched so as to expand its area under higher temperature conditions (for example, 20° C. to 50° C., preferably 30° C. to 50° C., and more preferably 40° C. to 50° C.), thereby separating adjacent cleaved semiconductor chips in the planar direction of the film surface, further increasing the distance between them. Here, in the dicing die bond film 20 according to this embodiment, the semiconductor wafer mounting base material according to this embodiment is used as the base material 1, and the semiconductor wafer mounting base material has a breaking elongation of 300% or more at -15°C and a breaking strength of 20N at -15°C. / 10mm For the above reasons, in the expanding step, the semiconductor wafer mounting base material is relatively difficult to break, and the die bond layer 3 can be relatively satisfactorily broken. Furthermore, by having the substrate for mounting a semiconductor wafer have one layer containing an elastomer resin, the substrate for mounting a semiconductor wafer is more resistant to tearing in the expanding process, and the die bond layer 3 can be more satisfactorily broken. Furthermore, since the elastomer resin in the substrate for mounting a semiconductor wafer contains an olefin-based elastomer resin, the substrate for mounting a semiconductor wafer is more resistant to tearing in the expanding process, and the die bond layer 3 can be broken more satisfactorily. Furthermore, by having a thickness of the semiconductor wafer mounting substrate of 90 μm or more and 130 μm or less, the semiconductor wafer mounting substrate is more resistant to tearing in the expanding process, and the die bond layer can be more sufficiently broken.

[0077] A series of steps from the half-cutting step to the expanding step may be referred to as a "DBG (Dicing Before Grinding) cleaving process." In addition, the half-cut process can be replaced with a modified region forming process in which a laser beam is irradiated to a planned dividing line in the semiconductor wafer to form a modified region, thereby making it possible to easily divide the semiconductor wafer at the planned dividing line. A series of steps from the modified region forming configuration to the expanding process is sometimes called an "SDBG (Stealth Dicing Before Grinding) cleaving process."

[0078] In the kerf maintaining process, as shown in FIG. 7, hot air (the setting value of the device generating the hot air is, for example, 200 to 250° C.) is applied to the dicing tape 10 to thermally shrink the dicing tape 10, and then the dicing tape 10 is cooled and solidified, thereby maintaining the distance (kerf) between adjacent cleaved semiconductor chips.

[0079] 8, in the pick-up process, the semiconductor chip with the die bond layer 3 attached (hereinafter also referred to as the semiconductor chip with the die bond layer) is peeled off from the adhesive layer 2 of the dicing tape 10. In detail, the pin member P is raised to push up the semiconductor chip with the die bond layer to be picked up through the dicing tape 10. The pushed-up semiconductor chip with the die bond layer is held by the suction jig J.

[0080] In the die bonding step, the semiconductor chip with the die bonding layer is bonded to an adherend (wiring board). In the above-mentioned manufacturing method of the semiconductor integrated circuit, an example of using the dicing die bond film 20 as an auxiliary tool has been described, but the semiconductor integrated circuit can also be manufactured in the same manner as described above when the dicing tape 10 is used as the auxiliary tool.

[0081] The dicing die bond film according to the present invention is not limited to the above embodiment. The dicing die bond film according to the present invention is not limited by the above-mentioned action and effect. The dicing die bond film according to the present invention can be modified in various ways without departing from the gist of the present invention. EXAMPLES

[0082] The present invention will now be described in more detail with reference to examples. The following examples are provided to further explain the present invention in detail, and are not intended to limit the scope of the present invention.

[0083] [Example 1] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. A metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for layers A and C, and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In layer B, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. Specifically, the substrate was cut in the thickness direction using a freezing microtome (manufactured by Yamato Koki Kogyo Co., Ltd.), and the cross section was observed with an SEM. The thickness of each layer was measured at five random points on the cut cross section, and the thickness of each layer was calculated by arithmetically averaging the thickness values ​​measured for each layer. <Preparation of dicing tape> The adhesive composition was applied to one surface of the rolled substrate using an applicator to a thickness of 30 μm. The substrate after the adhesive composition application was heated and dried at 110° C. for 3 minutes to form an adhesive layer, thereby obtaining a dicing tape according to Example 1. The pressure-sensitive adhesive composition was prepared as follows. First, 210 parts by mass of LA (lauryl acrylate), 170 parts by mass of INA (isononyl acrylate), 60 parts by mass of HEA (hydroxyethyl acrylate), and 1.0 part by mass of Niper BW (benzoyl peroxide) were mixed together to obtain a first resin composition. Next, the first resin composition was added to a round-bottom separable flask of a polymerization experimental apparatus equipped with a round-bottom separable flask (volume 1 L), a thermometer, a nitrogen inlet tube, and a stirring blade, and while stirring the first resin composition, the liquid temperature of the first resin composition was brought to room temperature (23°C), and the inside of the round-bottom separable flask was replaced with nitrogen for 6 hours. While continuing to flow nitrogen into the round-bottom separable flask, the first resin composition was stirred and the liquid temperature of the first resin composition was maintained at 62° C. for 3 hours and then at 75° C. for 2 hours to polymerize the INA, the HEA, and the AIBN to obtain a second resin composition. Then, the flow of nitrogen into the round-bottom separable flask was stopped. After the second resin composition was cooled until the liquid temperature reached room temperature, 48 parts by mass of 2-isocyanatoethyl methacrylate (manufactured by Showa Denko K.K., product name "Karenz MOI (registered trademark)") and 0.1 parts by mass of dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) were added to the second resin composition as a compound having a polymerizable carbon-carbon double bond, and the resulting third resin composition was stirred at a liquid temperature of 50°C under atmospheric conditions. Next, 1.5 parts by mass of Coronate L (isocyanate compound) and 5 parts by mass of Omnirad127D (photopolymerization initiator) were added to 100 parts by mass of the polymer solid content in the third resin composition to prepare a pressure-sensitive adhesive composition. <Preparation of dicing die bond film> 100 parts by mass of acrylic resin (manufactured by Nagase ChemteX Corporation, trade name "SG-N80", glass transition temperature -23°C), 210 parts by mass of epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name "EPPN 501HY"), 100 parts by mass of phenolic resin (manufactured by Gun-ei Chemical Industry Co., Ltd., trade name "LVR8210-DL"), 33 parts by mass of phenolic resin (manufactured by Meiwa Kasei Co., Ltd., trade name "HF-1M"), 440 parts by mass of spherical silica (manufactured by Admatechs Co., Ltd., trade name "SE-2050MCV"), 3 parts by mass of silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name "KBM-303"), and 0.5 parts by mass of curing catalyst (manufactured by Hokko Chemical Co., Ltd., trade name "TPP-K") were added to methyl ethyl ketone and mixed to obtain a die bond composition. Next, the die-bonding composition was applied to the silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner using an applicator to a thickness of 40 μm, and the die-bonding composition was dried at 130° C. for 2 minutes to remove the solvent, and an adhesive film of 40 μm was prepared on the release liner. Then, the three adhesive films thus prepared were laminated using a roll laminator to prepare an adhesive film of 120 μm in thickness. In this lamination, the lamination speed was 10 mm / sec, the temperature condition was 90° C., and the pressure condition was 0.15 MPa. Next, the side of the die bond sheet on which the release sheet was not laminated was attached to the adhesive layer of the dicing tape of Example 1, and then the release liner was peeled off from the die bond layer to obtain a dicing die bond film having a die bond layer (i.e., the dicing die bond film of Example 1).

[0084] [Example 2] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. The resin for layers A and C was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)), and this mixed resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by ExxonMobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In layers A, B, and C, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 2 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 2 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing / die bond film according to Example 2 was produced.

[0085] [Example 3] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type two-layer T-die extrusion molding machine, a substrate having a two-layer structure of A layer / B layer (a two-layer structure in which A layer is laminated onto B layer; the A layer is the first layer and the B layer is the second layer) was molded. The resin used for the A layer was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by ExxonMobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In layer B, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer and the B layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio of the A layer to the B layer (layer thickness ratio) was A layer:B layer=1:20. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer B became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 3 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. The thicknesses of the A layer and the B layer were measured by observing the cross section of the substrate with an SEM, as described in Example 1. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 3 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 3 was produced.

[0086] [Example 4] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. The resin for layers A and C was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)), and this mixed resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by ExxonMobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In layers A, B, and C, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 120 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 4 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 4 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 4 was produced.

[0087] [Example 5] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type two-layer T-die extrusion molding machine, a substrate having a two-layer structure of A layer / B layer (a two-layer structure in which A layer is laminated onto B layer; the A layer is the first layer and the B layer is the second layer) was molded. The resin used for the A layer was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by ExxonMobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In layer B, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer and the B layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 120 μm. The thickness ratio of the A layer to the B layer (layer thickness ratio) was A layer:B layer=1:20. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer B became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 5 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. The thicknesses of the A layer and the B layer were measured by observing the cross section of the substrate with an SEM, as described in Example 1. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 5 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 5 was produced.

[0088] [Example 6] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. A metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for layers A and C, and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In layer B, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:15:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 6 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 6 was produced.

[0089] [Example 7] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. The resin used for layers A and C was a mixed resin of metallocene PP resin and ionomer resin (the metallocene PP resin was Wintech WXK1223 (manufactured by Japan Polypropylene Corporation)), and this mixed resin contained 20 mass % of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In the layers A and C, the metallocene PP resin and the ionomer resin were mixed so that the ratio W2 of the mass of the metallocene PP resin to the mass of the ionomer resin (ionomer resin / metallocene PP resin) was 0.4. In addition, in layer B, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3). The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 7 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 7 was produced.

[0090] [Example 8] <Forming of substrate (substrate for mounting semiconductor wafers)> A single-layered substrate was formed using a single-layer extrusion T-die molding machine. The resin constituting the single layer was an EVA resin with a vinyl acetate content of 10% by mass. The extrusion was carried out at a die temperature of 190° C. The thickness of the substrate obtained by extrusion was 125 μm. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll to form a roll body. The thickness of the substrate in Example 8 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 8 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 8 was produced.

[0091] [Example 9] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. A metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for layers A and C, and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. For the resin of the B layer, an EVA resin having a vinyl acetate content of 20% by mass or more (the first EVA resin, trade name: Evaflex (registered trademark) EV250, manufactured by Dow Mitsui Polychemicals) was used. The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 100 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 9 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Example 9 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing die bond film according to Example 9 was produced.

[0092] [Comparative Example 1] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. A metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for layers A and C, and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. For the resin of the B layer, an EVA resin having a vinyl acetate content of 20% by mass or more (the first EVA resin, trade name: Evaflex (registered trademark) EV250, manufactured by Dow Mitsui Polychemicals) was used. The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 80 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 9 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Comparative Example 1 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing / die bond film according to Comparative Example 1 was produced.

[0093] [Comparative Example 2] <Forming of substrate (substrate for mounting semiconductor wafers)> Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer / B layer / C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers. Note that A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded. A metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for layers A and C, and the metallocene PP resin was made to contain 20% by mass of an antistatic agent. The resin for layer B was a mixed resin of elastomer resin and EVA resin with a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), a propylene-based elastomer resin, and the EVA resin (second EVA resin) with a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)). In the layer B, the elastomer resin and the second EVA resin were mixed so that the ratio W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) was 0.4. The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:5:1. After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer. The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses. As described in Example 1, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with an SEM. <Preparation of dicing tape> In the same manner as in Example 1, a dicing tape according to Comparative Example 2 was produced. <Preparation of dicing die bond film> In the same manner as in Example 1, a dicing / die bond film according to Comparative Example 2 was produced.

[0094] (Breaking elongation and breaking strength at -15℃) The breaking elongation and breaking strength of the substrates according to each example were measured at -15°C. The breaking elongation at -15°C and the breaking strength at -15°C were determined as follows. Specifically, for the breaking elongation, a dicing tape having a length of 120 mm (measurement length, L0) and a width of 10 mm was used as a test piece, and the test piece was pulled in the longitudinal direction using a tensile tester (Autograph AG-IS, manufactured by Shimadzu Corporation) under conditions of a temperature of -15°C, a chuck distance of 50 mm, and a pulling speed of 1000 mm / min, and the length (L1) at which the test piece broke was measured. Then, the breaking elongation E at −15° C. was calculated based on the following formula. Breaking elongation E = (L1-L0) / L0 x 100 The breaking strength was determined by measuring the force applied when the test piece broke when a tensile test was performed under the same conditions as above using the test piece and the tensile tester. The breaking elongation and breaking strength measured for the substrates of each example are shown in Table 1 below.

[0095] (Die-bond layer breakability and substrate tearing) A semiconductor wafer (planar dimensions 12 inches (300 mm), thickness 0.060 mm. The semiconductor wafer was cut into multiple semiconductor chips with a length of 10 mm and a width of 5 mm by DBG) and a dicing ring were attached to the dicing die bond film of each example. Next, the semiconductor wafer and the die bond layer were cut (mainly the die bond layer) using a die separator DDS2300 (manufactured by Disco Corporation), and the cuttability of the die bond layer and the breakage of the substrate were evaluated. The semiconductor wafer is divided into semiconductor chips having the size (length 10 mm×width 5 mm×thickness 0.060 mm) cut by the DBG through the above-mentioned cutting.

[0096] The breakability of the die bond layer was evaluated in detail as follows. First, the semiconductor wafer and the die bond layer were cleaved in a cool expander unit under conditions of an expansion temperature of −15° C., an expansion speed of 200 mm / sec, and an expansion amount of 15 mm to obtain a semiconductor chip with a die bond layer. Next, expansion was performed at room temperature, at an expansion speed of 1 mm / sec, and by an expansion amount of 7 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer edge of the bare wafer was thermally shrunk at a heat temperature of 250°C, a heat distance of 20 mm, and a rotation speed of 5° / sec. Next, the fractured portion of the semiconductor chip with the die bond layer was observed by a microscope, and the fracture rate was calculated. A fracture rate of 90% or more was evaluated as ◯, a fracture rate of 80% or more but less than 90% was evaluated as △, and a fracture rate of less than 80% was evaluated as ×. Regarding breakage of the substrate, after obtaining a semiconductor chip with a die bond layer in a cool expand unit, the substrate was visually observed, and a substrate that did not break at all was rated as ◯, a substrate that had locally stretched was rated as △, and a substrate that had cracks was rated as ×. For each example, the breakability of the die bond layer and the breakage of the substrate were evaluated, and the results are shown in Table 1 below.

[0097] (Kerf retention) A semiconductor wafer (planar dimensions 12 inches (300 mm), thickness 0.060 mm. The semiconductor wafer was cut into multiple semiconductor chips with a length of 10 mm and a width of 5 mm by DBG) and a dicing ring were attached to the dicing die bond film of each example. Next, the semiconductor wafer and the die bond layer were cut (mainly the die bond layer) using a die separator DDS2300 (manufactured by Disco Corporation), and the kerf retention after cutting was evaluated. The semiconductor wafer is divided into semiconductor chips having the size (length 10 mm×width 5 mm×thickness 0.060 mm) cut by the DBG through the above-mentioned cutting.

[0098] The kerf retention was evaluated in detail as follows. First, the bare wafer and the die bond layer were cleaved in a cool expander unit under conditions of an expansion temperature of −15° C., an expansion speed of 200 mm / sec, and an expansion amount of 15 mm to obtain a plurality of semiconductor chips with a die bond layer. Next, room temperature expansion was performed under the conditions of room temperature, expansion speed of 1 mm / sec, and expansion amount of 7 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer edge of the bare wafer was thermally shrunk under the conditions of heat temperature of 250°C, heat distance of 20 mm, and rotation speed of 5° / sec. Next, the kerf was measured using a digital microscope (VHX-6000, manufactured by Keyence Corporation). More specifically, after the heat expansion was completed (after the heat shrinkage), the interval between one chip and another chip in the cleaved portion (hereinafter also referred to as the interval length) was observed with a digital microscope to measure the interval length. The interval length was measured in each of the MD and TD directions at five arbitrarily selected points. The minimum value of the interval length measurements was used as the kerf. If the kerf was 30 μm or more, it was evaluated as ○ (the kerf was sufficiently maintained), if the kerf was 20 μm or more but less than 30 μm, it was evaluated as △ (the kerf was maintained, but not sufficiently), and if the kerf was 20 μm or less, it was evaluated as × (the kerf was not sufficiently maintained). The five arbitrarily selected locations are four locations on the outermost periphery of the circular wafer that are spaced apart from each other by approximately 90° in the circumferential direction, and the vicinity of the center of the circular wafer.

[0099] [Table 1]

[0100] From Table 1, it can be seen that in Examples 1 to 9, the fracture properties of the die bond layer were all evaluated as O or △, and no evaluation was found for X, whereas in Comparative Example 1, the fracture properties of the die bond layer were evaluated as X. Furthermore, from Table 1, it can be seen that in Examples 1 to 9, the evaluation of substrate breakage was either ◯ or △, with no × being observed, whereas in Comparative Example 2, the evaluation of substrate breakage was ×. From these results, the base material is classified as a material having a breaking elongation of 300% or more at -15°C and a breaking strength of 20N or less at -15°C. / 10mm It is clear that by doing the above, it is possible to achieve both improvement in the cleavability of the dicing tape and suppression of breakage of the substrate. Furthermore, in Examples 1 to 9, the evaluation of the calf maintenance was either ◯ or Δ, and no x was observed. From this, it is understood that in Examples 1 to 9, the maintenance of the kerf is also relatively good. [Explanation of symbols]

[0101] 1 Base material 2 Adhesive layer 3 Die bond layer 10 Dicing tape 20 Dicing die bond film G Backgrind Tape H Holder J suction jig P pin material R Dicing Ring T Wafer Processing Tape U Push-up member W Semiconductor wafer

Claims

1. An elastic layer containing an elastomer resin and a non-elastomer layer having a tensile storage modulus at room temperature (23°C) higher than that of the elastomer layer, The tensile storage modulus of the elastomer layer at room temperature is 10 MPa or more and 100 MPa or less, The breaking elongation at -15°C is 300% or more, and the breaking strength at -15°C is 20N / 10mm or more. Substrate for mounting semiconductor wafers.

2. The elastomer resin is an olefin-based elastomer resin. The semiconductor wafer mounting substrate according to claim 1 .

3. The thickness is 90 μm or more and 130 μm or less. The semiconductor wafer mounting substrate according to claim 1 or 2.

4. A substrate; A pressure-sensitive adhesive layer laminated on the substrate, The substrate is a substrate for mounting a semiconductor wafer according to any one of claims 1 to 3. Dicing tape.

5. a dicing tape having a substrate and a pressure-sensitive adhesive layer laminated thereon; a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape; The substrate is a substrate for mounting a semiconductor wafer according to any one of claims 1 to 3. Dicing die bond film.

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