Dielectrics, capacitors, electric circuits, circuit boards, and devices

Abstract

A dielectric 10 according to the present disclosure contains a composite oxide having a composition represented by LaxYyAl(1-x-y)Ok. In this composition, the condition 0.1 ≤ x+y < 0.50 is satisfied. Here, k is a value for keeping electrical neutrality of the composite oxide.

Description

[Technical field]

[0001] The present disclosure relates to dielectrics, capacitors, electric circuits, circuit boards, and devices. [Background technology]

[0002] 2. Description of the Related Art Capacitors using metal oxide as a dielectric material are known in the art.

[0003] For example, Patent Document 1 describes a capacitor element using an anode foil on which a dielectric oxide film is formed as a typical aluminum electrolytic capacitor. The dielectric oxide film is formed by anodization on the surface of the aluminum foil whose effective surface area has been expanded by etching.

[0004] In addition, Patent Document 1 describes a method for manufacturing an electrode foil in which aluminum is etched by applying an alternating current in an electrolyte. The electrolyte is an aqueous solution containing hydrochloric acid as the main component and at least one of sulfuric acid, oxalic acid, and phosphoric acid. In this manufacturing method, the current density of the applied alternating current reaches a maximum value at the beginning of the etching process and gradually decreases from the maximum value to 0 at an intermediate stage. It is explained that this manufacturing method can increase the surface area of ​​the electrode foil by generating dense and high-density etching pits, thereby increasing the capacitance of the aluminum electrolytic capacitor.

[0005] Patent Document 2 describes a capacitor having a dielectric layer located on the pores of a conductive porous substrate. Metal oxides such as Al2O3 are described as materials for forming the dielectric layer. The dielectric layer is formed by a deposition method such as atomic layer deposition, rather than an anodized film. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2005-203529 A [Patent Document 2] International Publication No. 2017 / 6247 Summary of the Invention [Problem to be solved by the invention]

[0007] The techniques described in Patent Documents 1 and 2 need to be reconsidered from the viewpoint of increasing the capacitance of a capacitor while keeping the dielectric loss low. Therefore, the present disclosure provides a dielectric that is advantageous from the viewpoint of increasing the capacitance of a capacitor while keeping the dielectric loss low. [Means for solving the problem]

[0008] The dielectric material of the present disclosure is La x Y y Al (1-x-y) O k The composite oxide has a composition represented by In the above composition, the condition 0.1≦x+y<0.50 is satisfied, and k is a value that maintains the electrical neutrality of the composite oxide. Effect of the Invention

[0009] According to the present disclosure, it is possible to provide a dielectric that is advantageous from the viewpoint of increasing the capacitance while keeping the dielectric loss of a capacitor low. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional view of a capacitor according to an embodiment of the present disclosure. [Figure 2A] FIG. 2A is a cross-sectional view of a capacitor according to another embodiment of the present disclosure. [Figure 2B] FIG. 2B is a cross-sectional view of a modification of the capacitor shown in FIG. 2A. [Figure 3A] FIG. 3A is a schematic diagram of an electric circuit according to an embodiment of the present disclosure. [Figure 3B] FIG. 3B is a diagram illustrating a schematic diagram of a circuit board according to an embodiment of the present disclosure. [Figure 3C]FIG. 3C is a schematic diagram of an apparatus according to an embodiment of the present disclosure. [Figure 4] FIG. 4 is a graph showing the relationship between the relative dielectric constant of the dielectric film of each sample and the atomic ratio of metal atoms. [Diagram 5] FIG. 5 is a graph showing the relationship between the dielectric loss tangent of the dielectric film of each sample and the atomic ratio of metal atoms. [Figure 6] FIG. 6 shows the X-ray diffraction (XRD) patterns of the dielectric films of Samples 1 to 9. [Figure 7] FIG. 7 shows the XRD patterns of the dielectric films of Samples 10 and 11. [Figure 8] FIG. 8 is an XRD pattern of the dielectric film of Sample 12. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] (Findings on which this disclosure is based) Porous parts can be formed by etching the surface of the metal foil. Metal foil having porous parts can be subjected to chemical conversion treatment such as anodization to form metal oxide on the surface of the metal skeleton of the porous parts, thereby making it possible to fabricate a capacitor having metal oxide as a dielectric. Since the porous parts have a large surface area, the capacitance of the capacitor can be increased. On the other hand, there is a limit to how much the surface area of ​​the porous parts can be enlarged. In addition, depending on the application of the capacitor, it may be difficult to use metal foil having porous parts as an electrode of the capacitor. It is also important to keep the dielectric loss of the capacitor low.

[0012] In view of these circumstances, the present inventors have conducted extensive research to develop a novel dielectric material having advantageous properties from the viewpoint of increasing the capacitance while keeping the dielectric loss of the capacitor low. After much trial and error, the present inventors have newly discovered that a material containing a specific composite oxide containing at least one element selected from the group consisting of La and Y and Al is advantageous from the viewpoint of increasing the capacitance while keeping the dielectric loss of the capacitor low. As a result, the present inventors have devised the dielectric material and capacitor of the present disclosure.

[0013] (Summary of one aspect of the present disclosure) The dielectric material according to the first aspect of the present disclosure is La x Y y Al (1-x-y) O k The composite oxide has a composition represented by In the above composition, the condition 0.1≦x+y<0.50 is satisfied, and k is a value that maintains the electrical neutrality of the composite oxide.

[0014] The dielectric material according to the first aspect tends to have a high relative dielectric constant and a low dielectric tangent, and is advantageous from the viewpoint of increasing the capacitance while keeping the dielectric loss of the capacitor low.

[0015] In the second aspect of the present disclosure, for example, the dielectric material according to the first aspect may be amorphous. According to the second aspect, the dielectric material is more likely to have a high relative dielectric constant and a low dielectric tangent.

[0016] In a third aspect of the present disclosure, for example, the dielectric material according to the first or second aspect may include a sputtered film. According to the third aspect, for example, a dielectric film for a capacitor can be formed by sputtering.

[0017] In a fourth aspect of the present disclosure, for example, the dielectric material according to any one of the first to third aspects may be used for a capacitor. According to the fourth aspect, the dielectric material can be used for a capacitor.

[0018] A capacitor according to a fifth aspect of the present disclosure includes: A first electrode; A dielectric material according to any one of the first to fourth aspects, disposed on the first electrode; and a second electrode covering at least a portion of the dielectric.

[0019] According to the fifth aspect, the dielectric material is likely to have a high relative dielectric constant and a low dielectric tangent, so that the capacitance of the capacitor is likely to be high and the dielectric loss of the capacitor is likely to be kept low.

[0020] In a sixth aspect of the present disclosure, for example, in the capacitor according to the fifth aspect, at least a portion of the first electrode may be porous. According to the sixth aspect, the surface area of ​​the first electrode is likely to be large, and the capacitance of the capacitor is likely to be high.

[0021] In a seventh aspect of the present disclosure, for example, in the capacitor according to the fifth or sixth aspect, the first electrode may contain a valve metal. According to the seventh aspect, a member containing a valve metal can be used as the first electrode.

[0022] In an eighth aspect of the present disclosure, for example, in the capacitor according to the seventh aspect, the valve metal may contain at least one selected from the group consisting of aluminum, tantalum, and niobium. According to the eighth aspect, a member containing aluminum can be used as the first electrode.

[0023] In a ninth aspect of the present disclosure, in the capacitor according to any one of the fifth to eighth aspects, the second electrode may contain at least one selected from the group consisting of aluminum, tantalum, niobium, gold, silver, platinum, and nickel. According to the ninth aspect, a member containing such a metal can be used as the second electrode.

[0024] In a tenth aspect of the present disclosure, the capacitor according to the sixth aspect may further include an electrolyte in contact with the second electrode. In addition, the electrolyte may be filled inside the porous material and may include at least one selected from the group consisting of an electrolytic solution, a conductive polymer, and manganese oxide. According to the tenth aspect, a capacitor including an electrolyte such as an electrolytic solution can be provided.

[0025] An electric circuit according to an eleventh aspect of the present disclosure includes the capacitor according to any one of the fifth to tenth aspects. According to the eleventh aspect, the dielectric loss of the capacitor is low and the capacitance of the capacitor is likely to be high, so that the characteristics of the electric circuit are likely to be improved.

[0026] A circuit board according to a twelfth aspect of the present disclosure includes the capacitor according to any one of the fifth to tenth aspects. According to the twelfth aspect, the dielectric loss of the capacitor is low and the capacitance of the capacitor is likely to be high, so that the characteristics of the circuit board are likely to be improved.

[0027] A device according to a thirteenth aspect of the present disclosure includes the capacitor according to any one of the fifth to tenth aspects. According to the thirteenth aspect, the dielectric loss of the capacitor is low and the capacitance of the capacitor is likely to be high, so that the characteristics of the device are likely to be improved.

[0028] (Embodiment) Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The present disclosure is not limited to the following embodiments.

[0029] FIG. 1 is a cross-sectional view showing a capacitor 1a according to an example of an embodiment of the present disclosure. As shown in FIG. 1, the capacitor 1a includes a dielectric 10. In other words, the dielectric 10 is a material for a capacitor. The dielectric 10 is made of La x Y y Al (1-x-y) O k In this composition, the condition 0.1≦x+y<0.50 is satisfied. In addition, k is a value that maintains the electrical neutrality of the complex oxide. k is, for example, 1.5. When the dielectric 10 contains such a complex oxide, the dielectric 10 tends to have a high relative dielectric constant and a low dielectric tangent. Therefore, the capacitor 1a tends to exhibit a high capacitance and tends to maintain the dielectric loss of the capacitor 1a low.

[0030] The composite oxide contained in the dielectric 10 is, for example, a solid solution of aluminum oxide and at least one selected from the group consisting of lanthanum oxide and yttrium oxide.

[0031] x+y is preferably 0.12 or more, more preferably 0.15 or more, and even more preferably 0.20 or more, which makes it easier for the dielectric 10 to have a higher relative dielectric constant.

[0032] x+y is preferably 0.49 or less, more preferably 0.48 or less, even more preferably 0.47 or less, and particularly preferably 0.45 or less, whereby the dielectric 10 is more likely to have a low dielectric tangent with certainty.

[0033] As long as the condition 0.1≦x+y<0.50 is satisfied, the value of x is not limited to a specific value. The value of x is, for example, a value greater than 0. In other words, the composite oxide contained in the dielectric 10 contains, for example, La. This makes it easier for the dielectric 10 to have a high relative dielectric constant and a low dielectric tangent. The value of x may be 0.01 or more, 0.02 or more, 0.03 or more, or 0.1 or more. The value of x is less than 0.50, may be 0.49 or less, may be 0.48 or less, may be 0.47 or less, may be 0.46 or less, or may be 0.45 or less. The value of x may be 0.

[0034] As long as the condition 0.1≦x+y<0.5 is satisfied, the value of y is not limited to a specific value. The value of y may be, for example, 0, 0.001 or more, 0.01 or more, 0.05 or more, or 0.1 or more. The value of y may be less than 0.50, 0.45 or less, or 0.40 or less.

[0035] The relative dielectric constant of the dielectric 10 is not limited to a specific value. The dielectric 10 has a higher relative dielectric constant than, for example, Al2O3. The relative dielectric constant of the dielectric 10 at 10 kHz is, for example, 12.0 or more, desirably 12.5 or more, and more desirably 13.0 or more. The relative dielectric constant of the dielectric 10 at 1 MHz is, for example, 11.0 or more, desirably 11.5 or more, more desirably 12.0 or more, and even more desirably 12.5 or more.

[0036] The dielectric loss tangent of the dielectric 10 is not limited to a specific value. The dielectric loss tangent of the dielectric 10 at 10 kHz and 1 MHz is, for example, 0.020 or less.

[0037] The dielectric 10 is, for example, amorphous. This makes it difficult for leakage current to occur in the dielectric 10. This is because it is believed that the occurrence of leakage current caused by grain boundaries of crystals can be suppressed in the dielectric 10. Therefore, the dielectric 10 is more likely to have a high relative dielectric constant and a low dielectric tangent. For example, when no peak having a half width of 5° or less and being clear against the background is confirmed in the XRD pattern of the dielectric 10 at a diffraction angle of 10° to 50°, it can be determined that the compound contained in the dielectric 10 is amorphous.

[0038] As shown in FIG. 1, in the capacitor 1a, the dielectric 10 includes, for example, a film. The dielectric 10 includes, for example, a sputtered film. In this case, the dielectric 10 is more likely to have a high relative dielectric constant and a low dielectric tangent. Also, the composition ratio of each metal atom in the complex oxide is more likely to be adjusted to a desired value. The dielectric 10 may be an anodized film or other thin film. Methods for forming other thin films include, for example, vacuum deposition, pulsed laser deposition (PLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD).

[0039] 1, the capacitor 1a further includes a first electrode 21 and a second electrode 22. The dielectric 10 is disposed on the first electrode 21. The second electrode 22 covers at least a portion of the dielectric 10.

[0040] The material forming the first electrode 21 and the second electrode 22 is not limited to a specific material. The first electrode 21 and the second electrode 22 contain, for example, a metal. The first electrode 21 contains, for example, a valve metal. Examples of the valve metal are aluminum, tantalum, and niobium. The first electrode 21 contains, for example, at least one valve metal selected from the group consisting of aluminum, tantalum, and niobium. The first electrode 21 may contain a precious metal such as gold or platinum, or may contain nickel.

[0041] The second electrode 22 is desirably, for example, a metal having electrical conductivity. The second electrode 22 may contain, for example, a valve metal such as aluminum, tantalum, or niobium, may contain a precious metal such as gold, silver, or platinum, or may contain nickel. The second electrode 22 contains, for example, at least one selected from the group consisting of aluminum, tantalum, niobium, gold, silver, platinum, and nickel.

[0042] 1, the first electrode 21 has a principal surface 21p. One principal surface of the dielectric 10 is in contact with the principal surface 21p, for example. The second electrode 22 has a principal surface 22p parallel to the principal surface 21p. The other principal surface of the dielectric 10 is in contact with the principal surface 22p, for example.

[0043] 2A is a cross-sectional view showing a capacitor 1b according to another example of an embodiment of the present disclosure. Capacitor 1b is configured similarly to capacitor 1a, except for parts that will be particularly described. Components of capacitor 1b that are the same as or correspond to those of capacitor 1a are given the same reference numerals, and detailed description will be omitted. The description of capacitor 1a also applies to capacitor 1b, unless technically inconsistent.

[0044] 2A, in capacitor 1b, at least a portion of first electrode 21 is porous. With such a configuration, the surface area of ​​first electrode 21 tends to be large, and the capacitance of the capacitor tends to be high. Such a porous structure can be formed, for example, by etching a metal foil and sintering a powder.

[0045] 2A, for example, a film of a dielectric 10 is formed on the surface of a porous portion of a first electrode 21. In this case, the method of forming the film of the dielectric 10 can be anodization or ALD.

[0046] In capacitor 1b, second electrode 22 is disposed so as to fill the void around the porous portion of first electrode 21, for example.

[0047] The second electrode 22 may contain, for example, a valve metal such as aluminum, tantalum, or niobium, may contain a precious metal such as gold, silver, or platinum, or may contain nickel. The second electrode 22 contains, for example, at least one selected from the group consisting of aluminum, tantalum, niobium, gold, silver, platinum, and nickel.

[0048] The capacitors 1a and 1b may be electrolytic capacitors. In this case, for example, an electrolyte 23 is disposed between the first electrode 21 and the second electrode 22. The electrolyte 23 may be disposed between the dielectric 10 and the second electrode 22. Fig. 2B shows a modified example of the capacitor 1b configured as an electrolytic capacitor. In the capacitor 1b, the electrolyte 23 is disposed so as to fill, for example, the voids around the porous portion of the first electrode 21.

[0049] The electrolyte includes at least one selected from the group consisting of, for example, an electrolytic solution and a conductive polymer. Examples of the conductive polymer include polypyrrole, polythiophene, polyaniline, and derivatives thereof. The electrolyte may be a manganese compound such as manganese oxide. The electrolyte may include a solid electrolyte.

[0050] An electrolyte containing a conductive polymer can be formed by performing chemical polymerization, electrolytic polymerization, or both chemical polymerization and electrolytic polymerization of a raw material monomer on the dielectric 10. An electrolyte containing a conductive polymer may also be formed by applying a solution or dispersion of the conductive polymer to the dielectric 10.

[0051] FIG. 3A is a schematic diagram of an electric circuit 3 according to an embodiment of the present disclosure. As shown in FIG. 3A, the electric circuit 3 includes a capacitor 1a. The electric circuit 3 is not limited to a specific circuit as long as it includes the capacitor 1a. The electric circuit 3 may be an active circuit or a passive circuit. The electric circuit 3 may be a discharge circuit, a smoothing circuit, a decoupling circuit, or a coupling circuit. Since the electric circuit 3 includes the capacitor 1a, the electric circuit 3 is likely to have desired characteristics. For example, noise is likely to be reduced by the capacitor 1a in the electric circuit 3. The electric circuit 3 may include a capacitor 1b instead of the capacitor 1a.

[0052] Fig. 3B is a diagram illustrating a schematic diagram of a circuit board 5 according to an embodiment of the present disclosure. As illustrated in Fig. 3B, the circuit board 5 includes a capacitor 1a. The circuit board 5 is not limited to a specific circuit board as long as it includes the capacitor 1a. The circuit board 5 includes, for example, an electric circuit 3. The circuit board 5 may be an embedded board or a motherboard. The circuit board 5 may include a capacitor 1b instead of the capacitor 1a.

[0053] FIG. 3C is a diagram illustrating a device 7 according to an embodiment of the present disclosure. As shown in FIG. 3C, the device 7 includes a capacitor 1a. The device 7 is not limited to a specific device as long as it includes the capacitor 1a. The device 7 includes, for example, a circuit board 5. The device 7 may be an electronic device, a communication device, a signal processing device, or a power supply device. The device 7 may be a server, an AC adapter, an accelerator, or a flat panel display such as a liquid crystal display (LCD). The device 7 may be a USB charger, a solid state drive (SSD), an information terminal such as a PC, a smartphone, or a tablet PC, or an Ethernet switch. EXAMPLES

[0054] The present disclosure will be described in more detail below with reference to examples. Note that the following examples are merely illustrative and the present disclosure is not limited to the following examples.

[0055] (Sample Preparation) Sputtering was performed using Ti and Pt as targets, and a lower electrode, which was a laminate of Ti thin film and Pt thin film, was formed on the substrate. The Ti thin film was in contact with the substrate. Corning's alkali-free glass EAGLE XG was used as the substrate. During sputtering, the substrate environment was kept under the condition of a pressure of 0.3 Pa, with argon gas occupying 100% of the volume. In addition, the temperature of the substrate was adjusted to 600°C.

[0056] Next, the dielectric film of each sample was formed on the lower electrode by co-sputtering using La2O3, Y2O3, and Al2O3 as targets. The conditions of the co-sputtering were adjusted so that the thickness of the dielectric film was 100 nm. In the co-sputtering, the environment of the substrate was kept under a pressure of 0.3 Pa with argon gas occupying 100% of the volume. In addition, the substrate was not heated. The composition ratio of La, Y, and Al in each sample was adjusted by adjusting the film formation time by opening and closing the shutter. In this way, the dielectric films of samples 1 to 12 were obtained. Next, sputtering was performed using Pt as a target to form an upper electrode made of Pt having a diameter of 104 μm and a thickness of 100 nm on the dielectric film. In this way, samples 1 to 12 were obtained.

[0057] (Identification of composition) Using a Rigaku Corporation X-ray fluorescence analyzer ZSX Primus IV, the dielectric film of each sample was subjected to X-ray fluorescence analysis before forming the upper electrode, and a quantitative analysis of the elements in each dielectric film was performed. The fundamental parameter method (FP method) was adopted as the quantitative analysis method. From the results of the quantitative analysis, the atomic ratio of La, Y, and Al in the dielectric film of each sample was determined. The results are shown in Table 1.

[0058] (Check for the presence or absence of crystalline phase) Before forming the upper electrode, an X-ray diffraction measurement was performed on the dielectric film of each sample using an X-ray diffraction apparatus D8 Discover manufactured by Bruker, and an XRD pattern was obtained by 2θ / θ scanning for each dielectric film. FIG. 6 shows the XRD patterns of the dielectric films of samples 1 to 9. FIG. 7 shows the XRD patterns of the dielectric films of samples 10 and 11. FIG. 8 shows the XRD pattern of the dielectric film of sample 12. In FIGS. 6, 7, and 8, the vertical axis indicates the diffraction intensity in arbitrary units, and the horizontal axis indicates the diffraction angle. In FIGS. 6 and 7, a scale indicating that the diffraction intensity is 0 is written at the boundary between two adjacent XRD patterns along the vertical axis. In the measurement, Cu-Kα rays were used as the X-ray source, the voltage was adjusted to 50 kV, and the current was adjusted to 100 mA. The measurement was performed using a two-dimensional detector and converted to 2θ.

[0059] (Dielectric properties) The dielectric constant ε and dielectric loss tangent tanδ of the dielectric film of each sample at 10 kHz and 1 MHz were measured using an LCR meter. The dielectric constant was determined by measuring the capacitance of each sample and based on the measured capacitance, the thickness of the dielectric film, and the electrode area. The ambient temperature during the measurement was 25°C. The results are shown in Table 1. Figure 4 shows the relationship between the dielectric constant of the dielectric film and the ratio of the number of atoms of La, Y, and Al to the number of atoms of La and Y. In Figure 4, the vertical axis shows the dielectric constant of the dielectric film, and the horizontal axis shows the ratio of the number of atoms of La and Y to the number of atoms of La, Y, and Al. Figure 5 shows the relationship between the dielectric loss tangent of the dielectric film and the ratio of the number of atoms of La, Y, and Al to the number of atoms of La and Y. In Figure 5, the vertical axis shows the dielectric loss tangent of the dielectric film, and the horizontal axis shows the ratio of the number of atoms of La and Y to the number of atoms of La, Y, and Al.

[0060] As shown in Table 1 and Fig. 4, the dielectric constants at frequencies of 10 kHz and 1 MHz of the dielectric films of Samples 1 to 9, in which the atomic ratio (La+Y) / (Al+La+Y) is 0.1 or more and less than 0.50, exceed 12.0. In addition, it is understood from Table 1 and Fig. 5 that the dielectric tangents at frequencies of 10 kHz and 1 MHz of the dielectric films of Samples 1 to 9 are as low as 0.020 or less. It was suggested that a dielectric containing a complex oxide having Al and at least one element selected from the group consisting of La and Y, in which the atomic ratio (La+Y) / (Al+La+Y) is adjusted to 0.1 or more and less than 0.50, satisfies both a high dielectric constant and a low dielectric tangent.

[0061] Figure 6 shows the X-ray diffraction (XRD) patterns of the dielectric films of Samples 1 to 9. As shown in Figure 6, in the XRD patterns of the dielectric films of Samples 1 to 9, no peaks having a half-width of 5° or less and clear against the background were observed, and it can be determined that the compounds contained in the dielectric films are amorphous. It was suggested that the dielectrics containing the above complex oxides are amorphous, and therefore the dielectrics satisfy both a high relative dielectric constant and a low dielectric loss tangent.

[0062] As shown in Table 1 and FIG. 4, the dielectric constants of the dielectric films of Samples 10 and 11, in which the atomic ratio (La+Y) / (Al+La+Y) is 0.50 or more, are high, being 15 or more at frequencies of 10 kHz and 1 MHz. On the other hand, as shown in Table 1 and FIG. 5, the dielectric loss tangents of the dielectric films of Samples 10 and 11, in which the atomic ratio (La+Y) / (Al+La+Y) is 0.50 or more, are high, being more than 0.020. For this reason, it is understood that it is difficult to say that a dielectric containing a complex oxide in which the atomic ratio (La+Y) / (Al+La+Y) is adjusted to 0.50 or more satisfies both a high dielectric constant and a low dielectric loss tangent. In addition, as shown in FIG. 7, in the XRD patterns of the dielectric films of Samples 10 and 11, no peaks having a half-width of 5° or less and clear against the background are confirmed, and it can be determined that the compound contained in the dielectric film is amorphous.

[0063] The dielectric film of sample 12 is made of a single Al2O3. As shown in Table 1 and FIG. 5, the dielectric loss tangent of the dielectric film of sample 12 at frequencies of 10 kHz and 1 MHz is low, about 0.01. On the other hand, as shown in Table 1 and FIG. 4, the relative dielectric constant of the dielectric film of sample 12 at frequencies of 10 kHz and 1 MHz is 10 or less, which is not high. Therefore, it is understood that a dielectric containing a complex oxide in which the atomic ratio (La+Y) / (Al+La+Y) is adjusted to be less than 0.1 is not able to satisfy both a high relative dielectric constant and a low dielectric loss tangent. In addition, as shown in FIG. 8, in the XRD pattern of the dielectric film of sample 12, no peak having a half width of 5° or less and clear against the background is confirmed, and it can be determined that the compound contained in the dielectric film is amorphous.

[0064] [Table 1] [Industrial Applicability]

[0065] The dielectric material of the present disclosure can be suitably used in electronic components such as electrolytic capacitors.

Claims

1. La x Y y A (1-x-y) O k The composite oxide has a composition represented by In the composition, the condition 0.1≦x+y<0.50 is satisfied, and k is a value that maintains the electrical neutrality of the composite oxide. Dielectric.

2. The dielectric of claim 1 , wherein the dielectric is amorphous.

3. The dielectric according to claim 1 or 2, wherein the dielectric includes a sputtered film.

4. The dielectric of claim 1 , wherein the dielectric is for a capacitor.

5. A first electrode; A dielectric material according to claim 1 , disposed on the first electrode; A second electrode covering at least a portion of the dielectric. Capacitor.

6. The capacitor of claim 5 , wherein at least a portion of the first electrode is porous.

7. The capacitor of claim 5 or 6, wherein the first electrode comprises a valve metal.

8. 8. The capacitor of claim 7, wherein the valve metal comprises at least one selected from the group consisting of aluminum, tantalum, and niobium.

9. The capacitor according to claim 5 , wherein the second electrode comprises at least one selected from the group consisting of aluminum, tantalum, niobium, gold, silver, platinum, and nickel.

10. further comprising an electrolyte in contact with the second electrode; The electrolyte is filled inside the porous material, and includes at least one selected from the group consisting of an electrolytic solution, a conductive polymer, and manganese oxide. The capacitor of claim 6.

11. An electric circuit comprising a capacitor according to any one of claims 5 to 10.

12. A circuit board comprising the capacitor according to claim 5 .

13. An apparatus comprising a capacitor according to any one of claims 5 to 10.

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