Composition for polishing

Abstract

The present invention provides a polishing composition which can be favorably used under either low pressure or high pressure conditions and with which it is possible to achieve, during polishing of materials having high hardness, surfaces that are as smooth as or smoother than surfaces obtained using a polishing composition that does not contain abrasive grains. This polishing composition is for polishing a material having a Vickers hardness of 1500HV or more. The polishing composition includes particles and an oxidizing agent, wherein the particle content is less than 400 ppm.

Description

[Technical field]

[0001] The present invention relates to a polishing composition. More specifically, the present invention relates to a polishing composition suitable for polishing high-hardness materials having a Vickers hardness of 1500Hv or more. This application claims priority based on Japanese Patent Application No. 2020-060778 filed on March 30, 2020, the entire contents of which are incorporated herein by reference. [Background technology]

[0002] The surfaces of materials such as metals, semimetals, nonmetals, and oxides thereof are polished using a polishing composition. For example, surfaces made of compound semiconductor materials such as silicon carbide, boron carbide, tungsten carbide, silicon nitride, titanium nitride, and gallium nitride are processed by polishing (lapping) performed by supplying diamond abrasive grains between the surface and a polishing table. However, lapping using diamond abrasive grains is prone to defects and distortions due to the generation and remaining of scratches and dents. Therefore, polishing (polishing) using a polishing pad and a polishing composition after lapping using diamond abrasive grains or instead of the lapping is being considered. Examples of documents disclosing this type of conventional technology include Patent Documents 1 and 2. Patent Document 1 describes polishing a silicon carbide substrate using a polishing composition containing 0.1 to 30% by weight of abrasive grains. On the other hand, Patent Document 2 discloses polishing a silicon carbide substrate using a polishing composition that does not contain abrasive grains. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2011-513991 [Patent Document 2] International Publication No. 2012 / 147605 Summary of the Invention [Problem to be solved by the invention]

[0004] In general, from the viewpoint of manufacturing efficiency and cost-effectiveness, it is desired that the polishing removal rate is sufficiently high for practical use. For example, in polishing a surface made of a high-hardness material such as silicon carbide, there is a strong demand for an improvement in the polishing removal rate. The polishing removal rate for this type of surface can be improved by increasing the load applied to the polishing surface during polishing to increase the processing pressure. However, when using a polishing composition containing abrasive grains as in Patent Document 1, increasing the processing pressure tends to cause polishing damage such as scratches on the polishing surface, making it difficult to achieve a smooth and flat surface. In addition, if the polishing composition contains a predetermined amount or more of abrasive grains, the friction coefficient between the polishing surface and the polishing pad during polishing tends to increase.

[0005] To address the above-mentioned problems associated with polishing compositions containing abrasive grains, a polishing composition that does not contain abrasive grains has been proposed in Patent Document 2. However, when the polishing composition does not contain abrasive grains, increasing the processing pressure to increase the polishing removal rate or the like increases the coefficient of friction between the polishing surface and the polishing pad, which may damage the wafer or substrate.

[0006] The present invention has been made in consideration of the above circumstances, and its object is to provide a polishing composition that can achieve a surface that is equal to or smoother than that obtained with a polishing composition that does not contain abrasive grains when polishing high-hardness materials having a Vickers hardness of 1500 Hv or more, and that can be preferably used under both low-pressure and high-pressure conditions. [Means for solving the problem]

[0007] According to this specification, a polishing composition for polishing a material having a Vickers hardness of 1500Hv or more is provided. This polishing composition contains particles and an oxidizing agent, and the content of the particles is less than 400 ppm. By reducing the content of particles contained in the polishing composition to less than 400 ppm, when polishing a high-hardness material at low pressure, a smooth polished surface comparable to that of a polishing composition that does not contain abrasive grains is realized. In addition, when polishing at high pressure, the increase in polishing friction is suppressed, the load on the polished surface caused by the friction is reduced, and damage to the wafer or substrate is prevented. Furthermore, by using particles less than 400 ppm, a polished surface with higher smoothness is realized when polishing at high pressure.

[0008] In this specification, "low (processing) pressure" refers to a pressure less than 30 kPa, and "high (processing) pressure" refers to a pressure of 30 kPa or more (upper limit is about 150 kPa). The processing pressure here is synonymous with the polishing pressure.

[0009] In some preferred embodiments of the techniques disclosed herein (including the polishing composition, the polishing method, and the method for manufacturing a substrate; the same applies below), the average aspect ratio of the particles is 1.5 or less. By making the average aspect ratio of the particles 1.5 or less, the friction between the polishing surface and the polishing pad by the particles under high pressure conditions is preferably reduced, and even under high pressure conditions, the load on the polishing surface is small, and a high polishing removal rate and high surface quality can be preferably achieved at the same time.

[0010] In some preferred embodiments, silica particles are used as the particles. The effects of the technology disclosed herein are preferably realized in a composition containing silica particles as particles. In addition, as the silica particles, for example, colloidal silica is preferably used.

[0011] In some preferred embodiments, the oxidizing agent is a permanganate. With such a configuration, the polishing removal rate is easily improved in polishing a hard material, and a high polishing removal rate and a smooth polished surface can be preferably achieved at the same time.

[0012] In some preferred embodiments, the polishing composition further contains a metal salt A. According to such a configuration, the polishing removal rate is likely to be improved in polishing a high-hardness material.

[0013] In some preferred embodiments, the material having a Vickers hardness of 1500 Hv or more is silicon carbide. In polishing silicon carbide, the effects of the techniques disclosed herein are preferably exerted.

[0014] According to this specification, a method for polishing a material having a Vickers hardness of 1500Hv or more is further provided. The method includes a step of polishing the material using any of the polishing compositions disclosed herein. According to this method, in polishing a high-hardness material, it is possible to realize a surface that is as smooth or smoother than that obtained by a polishing composition that does not contain abrasive grains, and under high pressure conditions, a high polishing removal rate can be achieved with less load on the polished surface. In addition, a surface with higher smoothness can be realized. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Preferred embodiments of the present invention will be described below. Note that matters other than those specifically mentioned in this specification that are necessary for carrying out the present invention can be understood as design matters for a person skilled in the art based on the prior art in the relevant field. The present invention can be carried out based on the contents disclosed in this specification and the technical common sense in the relevant field.

[0016] <Polishing composition> (particle) The polishing composition disclosed herein is characterized in that the content of particles contained in the polishing composition (when multiple types of particles are contained, the total content of them) is less than 400 ppm. Here, in this specification, "ppm" refers to the weight (mg) of particles in 1 liter (L) of the polishing composition. According to a polishing composition containing the above particles at a rate of less than 400 ppm, when a high-hardness material is polished at low pressure, the content of particles that may cause polishing scratches is limited, and a smooth polished surface that is comparable to that of a polishing composition that does not contain abrasive grains is realized. In addition, under high-pressure conditions, it is believed that the particles contained in a small amount in the polishing composition function to suppress an increase in polishing friction against the polishing surface. As a result, the load on the polishing surface is reduced, and damage to the wafer or substrate is prevented. Furthermore, when the polishing composition contains less than 400 ppm of particles, a surface having high smoothness is realized when a high-hardness material is polished under either low or high pressure conditions. Note that the effect of the technology disclosed herein is not limited to the action of the above-mentioned particles alone.

[0017] The content of particles in the polishing composition can be 0.01 ppm or more, for example, 0.1 ppm or more, and it is appropriate to make it 1 ppm or more, and it can be 5 ppm or more, 10 ppm or more, preferably 20 ppm or more, more preferably 40 ppm or more, even more preferably 60 ppm or more, particularly preferably 70 ppm or more (for example, 80 ppm or more), and it can be 90 ppm or more.The polishing composition disclosed herein can also be preferably implemented in an embodiment in which the content of the above particles is 120 ppm or more, 170 ppm or more, 220 ppm or more, or 270 ppm or more, from the viewpoint of further improving the polishing removal rate. Furthermore, from the viewpoint of obtaining a smooth polished surface, the content of the above particles may be 350 ppm or less, 300 ppm or less, 250 ppm or less, 200 ppm or less, 150 ppm or less, 100 ppm or less, 95 ppm or less, 85 ppm or less, 65 ppm or less, or 30 ppm or less.

[0018] The material and properties of the particles are not particularly limited as long as the effects of the present invention are exhibited. For example, the particles may be any of inorganic particles, organic particles, and organic-inorganic composite particles. For example, inorganic particles include oxide particles such as silica particles, alumina particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, and iron oxide particles; nitride particles such as silicon nitride particles and boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate and barium carbonate; and the like. For example, organic particles include particles substantially composed of any of crosslinked or non-crosslinked polymethyl methacrylate, polyacrylonitrile, polystyrene, nylon, silicone, and the like. One type of particle may be used alone, or two or more types may be used in combination. Among them, oxide particles such as silica particles, alumina particles, cerium oxide particles, chromium oxide particles, zirconium oxide particles, manganese dioxide particles, iron oxide particles, and magnesium oxide particles are preferred because they can form a good surface, and silica particles, alumina particles, cerium oxide particles, and manganese dioxide particles are more preferred, and silica particles are particularly preferred from the viewpoint of reducing friction between the polishing surface and the polishing pad and improving the smoothness of the polishing surface. In addition, when the polishing composition contains organic particles, the particles are preferably particles substantially composed of either polystyrene, nylon, or the like.

[0019] Examples of silica particles include colloidal silica, fumed silica, precipitated silica, etc. From the viewpoint of improving smoothness, preferred silica particles include colloidal silica and fumed silica. From the viewpoint of reducing friction between the polishing surface and the polishing pad, colloidal silica is particularly preferred.

[0020] The true specific gravity (true density) of the silica particles is preferably 1.5 or more, more preferably 1.6 or more, and even more preferably 1.7 or more. By increasing the true specific gravity of the silica particles, the physical polishing ability tends to increase. The upper limit of the true specific gravity of the silica particles is not particularly limited, but is typically 2.3 or less, for example, 2.2 or less, 2.0 or less, or 1.9 or less. The true specific gravity of the silica particles can be measured by a liquid substitution method using ethanol as a substitution liquid.

[0021] The average primary particle size of the particles (preferably silica particles) is not particularly limited. From the viewpoint of reducing the friction between the polishing surface and the polishing pad and improving the polishing removal rate, the average primary particle size of the particles can be 5 nm or more, suitably 10 nm or more, preferably 20 nm or more, more preferably 30 nm or more, for example, 40 nm or more, or 50 nm or more. The average primary particle size of the particles can be about 1000 nm or less, suitably 500 nm or less. From the viewpoint of obtaining a smooth polishing surface, the average primary particle size of the particles is preferably 300 nm or less, more preferably 200 nm or less, and even more preferably 100 nm or less. In some embodiments, the average primary particle size of the particles may be 80 nm or less, may be less than 70 nm, or may be less than 50 nm.

[0022] In this specification, the average primary particle size is calculated by the following formula: average primary particle size (nm) = 6000 / (true density (g / cm)) based on the specific surface area (BET value) measured by the BET method. 3 ) × BET value (m 2 The specific surface area is the particle size (BET particle size) calculated by the formula: (a) specific surface area = (b) / (g) The specific surface area can be measured using, for example, a surface area measuring device manufactured by Micromeritics, Inc., under the trade name "Flow Sorb II 2300."

[0023] The average secondary particle diameter of the particles (preferably silica particles) is not particularly limited. From the viewpoint of reducing polishing friction and improving the polishing removal rate, the average secondary particle diameter of the particles can be 20 nm or more, suitably 40 nm or more, and preferably 50 nm or more. In some embodiments, the average secondary particle diameter of the particles may be, for example, 70 nm or more, 90 nm or more, or 100 nm or more. In addition, the average secondary particle diameter of the particles can be approximately 1000 nm or less, suitably 500 nm or less. From the viewpoint of obtaining a smooth polished surface, the average secondary particle diameter of the particles is preferably 300 nm or less, more preferably 200 nm or less, and even more preferably 150 nm or less. In some embodiments, the average secondary particle diameter of the particles may be 110 nm or less, 80 nm or less, or 65 nm or less.

[0024] The average secondary particle size of the particles can be measured as the volume average particle size by dynamic light scattering using, for example, a model "UPA-UT151" manufactured by Nikkiso Co., Ltd.

[0025] The shape (outer shape) of the particles is preferably spherical. Although not particularly limited, the average value of the long diameter / short diameter ratio of the particles (average aspect ratio) is in principle 1.00 or more, and from the viewpoint of improving the polishing removal rate, it may be, for example, 1.05 or more, or 1.10 or more. In addition, the average aspect ratio of the particles is suitably 3.0 or less, and may be 2.0 or less. From the viewpoint of reducing friction between the polishing surface and the polishing pad, the average aspect ratio of the particles is preferably 1.50 or less, may be 1.30 or less, or may be 1.20 or less. Particles having the above average aspect ratio are also advantageous from the viewpoint of improving the smoothness of the polishing surface and reducing scratches.

[0026] The shape (outer shape) and average aspect ratio of particles can be grasped, for example, by observation with an electron microscope. As a specific procedure for grasping the average aspect ratio, for example, a scanning electron microscope (SEM) is used to extract the shape of a predetermined number of particles (for example, 200 particles). The smallest rectangle circumscribing the shape of each extracted particle is drawn. Then, for the rectangle drawn for each particle shape, the value obtained by dividing the length of the long side (value of the long axis) by the length of the short side (value of the short axis) is calculated as the long axis / short axis ratio (aspect ratio). The average aspect ratio can be obtained by arithmetically averaging the aspect ratios of the above-mentioned predetermined number of particles.

[0027] In the embodiment in which the polishing composition contains silica particles as particles, the polishing composition may further contain particles made of materials other than the above-mentioned silica (hereinafter also referred to as non-silica particles).Examples of such non-silica particles include oxide particles such as alumina particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese oxide particles, zinc oxide particles, and iron oxide particles; nitride particles such as silicon nitride particles and boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate and barium carbonate, and the like.

[0028] In addition, the polishing composition disclosed herein may be one that does not substantially contain diamond particles as particles. Diamond particles have high hardness, which may limit the improvement of smoothness. In addition, diamond particles are generally expensive, so they are not advantageous in terms of cost-effectiveness, and from a practical standpoint, the dependency on high-priced materials such as diamond particles may be low. Here, "particles that do not substantially contain diamond particles" refers to the proportion of diamond particles in the entire particles being 1% by weight or less, including the case where the proportion of diamond particles is 0% by weight. In such an embodiment, the application effect of the present invention can be preferably exhibited.

[0029] (Oxidizing agent) The polishing composition disclosed herein contains an oxidizing agent. The oxidizing agent can exhibit the effect of improving the polishing removal rate in polishing of high hardness materials (e.g., silicon carbide). According to the technology disclosed herein, in a composition in which the content of particles such as silica particles is limited, a higher polishing removal rate can be realized by using an appropriate amount of an oxidizing agent. Specific examples of the oxidizing agent include peroxides such as hydrogen peroxide; nitric acid, its salts such as iron nitrate, silver nitrate, aluminum nitrate, and its complexes such as cerium ammonium nitrate; persulfates such as peroxomonosulfuric acid and peroxodisulfuric acid, and their salts such as ammonium persulfate and potassium persulfate; chlorine compounds such as chloric acid and its salts, perchloric acid and its salts such as potassium perchlorate; bromine compounds such as bromic acid and its salts such as potassium bromate; iodic acid, its salts such as ammonium iodate, periodic acid, its salts such as sodium periodate and potassium periodate; ferric acid, its salts such as potassium ferrate. permanganate, its salts such as sodium permanganate and potassium permanganate; chromic acid, its salts such as potassium chromate and potassium dichromate; vanadic acid, its salts such as ammonium vanadate, sodium vanadate and potassium vanadate; ruthenic acids such as perruthenic acid or its salts; molybdic acid, its salts such as ammonium molybdate and disodium molybdate; rhenic acids such as perrhenic acid or its salts; tungstic acid, its salts such as disodium tungstate; etc. The oxidizing agent can be used alone or in combination of two or more.

[0030] In some preferred embodiments, the polishing composition contains a complex metal oxide as an oxidizing agent. Specific examples of the complex metal oxide include metal nitrates such as iron nitrate and silver nitrate; ferrates such as potassium ferrate; permanganates such as sodium permanganate and potassium permanganate; chromates such as potassium chromate and potassium dichromate; vanadates such as sodium vanadate and potassium vanadate; ruthenates such as perruthenic acid salts; molybdates such as ammonium molybdate and disodium molybdate; rhenates such as perrhenic acid salts; tungstates such as disodium tungstate; and the like. Among these, permanganates are particularly preferably used. The polishing composition contains a permanganate, which suitably improves the polishing removal rate. The complex metal oxides can be used alone or in combination of two or more.

[0031] In a particularly preferred embodiment, the composite metal oxide is a composite metal oxide having a monovalent or divalent metal element (excluding transition metal elements) and a fourth period transition metal element of the periodic table. Suitable examples of the monovalent or divalent metal element include Na, K, Mg, and Ca. Of these, Na and K are more preferred. Suitable examples of the fourth period transition metal element of the periodic table include Fe, Mn, Cr, V, and Ti. Of these, Fe, Mn, and Cr are more preferred, and Mn is even more preferred. The composite metal oxide is effective in reducing the hardness of high-hardness materials such as silicon carbide, making the material brittle. This more suitably improves the polishing removal rate.

[0032] When the composite metal oxide is a salt (for example, permanganate), the composite metal oxide may be present in the polishing composition in the form of ions.

[0033] The polishing composition disclosed herein may or may not further contain an oxidizing agent other than the composite metal oxide. The technique disclosed herein can be preferably implemented in an embodiment that does not substantially contain an oxidizing agent (e.g., hydrogen peroxide) other than the composite metal oxide.

[0034] The content of the oxidizing agent in the polishing composition is usually appropriate to be 0.005 mol / L or more. From the viewpoint of improving the polishing removal rate, the content of the oxidizing agent is preferably 0.008 mol / L or more, more preferably 0.01 mol / L or more, may be 0.03 mol / L or more, may be 0.05 mol / L or more, may be 0.06 mol / L or more, or may be 0.07 mol / L or more. From the viewpoint of improving the surface quality after polishing, the content of the oxidizing agent in the polishing composition is usually appropriate to be 0.5 mol / L or less, preferably 0.3 mol / L or less, more preferably 0.2 mol / L or less, may be 0.1 mol / L or less, or may be 0.09 mol / L or less.

[0035] (water) The polishing composition disclosed herein contains a liquid (a medium that is liquid at 23°C) generally called a dispersion medium or solvent. The type of the solvent is appropriately set according to the type of particles, the material to be polished, and the mode of use, and is not limited to a specific type. In a typical embodiment, the polishing composition may contain water. As the water, ion-exchanged water (deionized water), pure water, ultrapure water, distilled water, etc. can be preferably used. The polishing composition disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, as necessary. Usually, it is appropriate that 90% by volume or more of the solvent contained in the polishing composition is water, preferably 95% by volume or more is water, and more preferably 99 to 100% by volume is water.

[0036] (acid) The polishing composition may contain an acid as necessary for the purpose of adjusting pH or improving the polishing removal rate. Both inorganic and organic acids can be used as the acid. Examples of inorganic acids include sulfuric acid, nitric acid, hydrochloric acid, and carbonic acid. Examples of organic acids include aliphatic carboxylic acids such as formic acid, acetic acid, and propionic acid, aromatic carboxylic acids such as benzoic acid and phthalic acid, citric acid, oxalic acid, tartaric acid, malic acid, maleic acid, fumaric acid, succinic acid, organic sulfonic acids, and organic phosphonic acids. These may be used alone or in combination of two or more. When an acid is used, the amount of the acid is not particularly limited, and may be determined according to the purpose of use (e.g., pH adjustment). Alternatively, in some embodiments of the polishing composition disclosed herein, the composition may be substantially free of acid.

[0037] (Basic compounds) The polishing composition may contain a basic compound as necessary for the purpose of adjusting pH or improving the polishing removal rate. Here, the basic compound refers to a compound that has the function of increasing the pH of the polishing composition by being added to the polishing composition. Examples of basic compounds include alkali metal hydroxides such as potassium hydroxide and sodium hydroxide; carbonates and bicarbonates such as ammonium hydrogen carbonate, ammonium carbonate, potassium hydrogen carbonate, potassium carbonate, sodium hydrogen carbonate, and sodium carbonate; ammonia; quaternary ammonium compounds such as quaternary ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabutylammonium hydroxide; and other amines, phosphates, hydrogen phosphates, and organic acid salts. The basic compounds may be used alone or in combination of two or more. When a basic compound is used, the amount used is not particularly limited and may be an amount depending on the purpose of use (e.g., pH adjustment). Alternatively, in some embodiments of the polishing composition disclosed herein, the composition may be substantially free of a basic compound.

[0038] (Metal Salt A) The polishing composition disclosed herein may contain at least one metal salt A selected from the group consisting of alkali metal salts and alkaline earth metal salts for the purpose of improving the polishing removal rate. In polishing, the oxidizing agent alters the polishing surface (particularly the surface of a high-hardness material such as silicon carbide), and the altered layer is removed by friction with particles and a polishing pad. The metal salt A exhibits a catalytic action that promotes the above-mentioned alteration and removal, and is considered to contribute to the improvement of the polishing removal rate. Here, the altered layer is, for example, a layer containing an oxide film, and the catalytic action is, for example, an action of dissolving the oxide film. However, it is not limited to the above reasons. The metal salt A preferably contains one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) as an element belonging to an alkali metal or alkaline earth metal. Among these, any of Na, K, Ca, and Sr is preferred. In some embodiments, the metal salt A is an alkali metal salt. In the case of an alkali metal salt, aggregation of particles originating from the ions of the metal is unlikely to occur. Therefore, in a polishing composition containing the particles, better polishing properties can be obtained. In addition, in some embodiments, the metal salt A is an alkaline earth metal salt. In the case of an alkaline earth metal salt, the ions of the metal are unlikely to diffuse, so that metal contamination of the polishing surface can be reduced. Therefore, a better polished product can be obtained.

[0039] The type of the salt in the metal salt A is not particularly limited, and may be an inorganic acid salt or an organic acid salt. For example, examples of inorganic acid salts include salts of hydrohalic acids such as hydrochloric acid, hydrobromic acid, and hydrofluoric acid, and salts of nitric acid, sulfuric acid, carbonic acid, silicic acid, boric acid, and phosphoric acid. Examples of organic acid salts include salts of carboxylic acids such as formic acid, acetic acid, propionic acid, benzoic acid, glycine acid, butyric acid, citric acid, tartaric acid, and trifluoroacetic acid; organic sulfonic acids such as methanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, and toluenesulfonic acid; organic phosphonic acids such as methylphosphonic acid, benzenephosphonic acid, and toluenephosphonic acid; and organic phosphoric acids such as ethylphosphoric acid. Among these, salts of hydrochloric acid, nitric acid, sulfuric acid, silicic acid, boric acid, and phosphoric acid are preferred, and salts of hydrochloric acid and nitric acid are more preferred.

[0040] Specific examples of the metal salt A include chlorides such as lithium chloride, sodium chloride, potassium chloride, magnesium chloride, calcium chloride, strontium chloride, and barium chloride; bromides such as sodium bromide, potassium bromide, and magnesium bromide; fluorides such as lithium fluoride, sodium fluoride, potassium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, and barium fluoride; nitrates such as lithium nitrate, sodium nitrate, potassium nitrate, magnesium nitrate, calcium nitrate, strontium nitrate, and barium nitrate; sulfates such as lithium sulfate, sodium sulfate, potassium sulfate, magnesium sulfate, calcium sulfate, strontium sulfate, and barium sulfate; carbonates such as potassium carbonate, potassium bicarbonate, sodium carbonate, sodium bicarbonate, magnesium carbonate, calcium carbonate, strontium carbonate, and barium carbonate; borates such as sodium borate; and carboxylates such as potassium acetate, sodium acetate, calcium acetate, strontium acetate, sodium benzoate, calcium benzoate, sodium citrate, and calcium citrate. The metal salt A may be used alone or in combination of two or more kinds.

[0041] The metal salt A is preferably a water-soluble salt. By using the water-soluble metal salt A, a good surface with few defects such as scratches can be efficiently formed. In a preferred embodiment, the metal salt A can be a salt in which the aqueous solution of the metal salt A dissolved in water shows a neutral range, typically a positive salt produced by neutralization of a strong acid and a strong base. By using the metal salt A in which the aqueous solution shows a neutral range, a high-quality surface with further reduced defects such as scratches can be efficiently formed. The neutral range here means, for example, a pH (5% aqueous solution, 25°C) of 4 to 9, preferably 4 to 8. Examples of the metal salt A in which the aqueous solution shows a neutral range include chlorides such as sodium chloride, potassium chloride, calcium chloride, and strontium chloride, and nitrates such as sodium nitrate, potassium nitrate, calcium nitrate, and strontium nitrate. Among them, calcium chloride, strontium chloride, potassium chloride, sodium chloride, and calcium nitrate are preferable because they can efficiently form a good surface. In some embodiments, the metal salt A is a chloride or nitrate of an alkali metal. Also, in some embodiments, metal salt A is an alkaline earth metal chloride or nitrate.

[0042] The concentration (content) C1 of the metal salt A in the polishing composition is not particularly limited, but is usually suitably 10 mol / L or less. By reducing the concentration C1 of the metal salt A, the polishing removal rate can be improved to a higher level in polishing of high-hardness materials. From the viewpoint of the polishing removal rate, the concentration C1 is suitably 10 mol / L or less, preferably 8 mol / L or less, more preferably 6 mol / L or less, for example 3 mol / L or less, or more preferably 1.5 mol / L or less. In some embodiments, the concentration C1 of the metal salt A may be 1 mol / L or less, 0.5 mol / L or less, for example 0.1 mol / L or less, typically 0.05 mol / L or less. The lower limit of the concentration C1 is suitably 0.0001 mol / L or more, preferably 0.0005 mol / L or more, more preferably 0.001 mol / L or more, and even more preferably 0.003 mol / L or more. The concentration C1 may be, for example, 0.0035 mol / L or more, 0.005 mol / L or more, or 0.01 mol / L or more. The technology disclosed herein can be preferably practiced, for example, in an embodiment in which the concentration C1 of the metal salt A in the polishing composition is 0.003 mol / L to 1.5 mol / L or 0.0035 mol / L to 1 mol / L.

[0043] Although not particularly limited, from the viewpoint of better exerting the effect of using the oxidizing agent and the metal salt A in combination, the ratio (C1 / C2) of the concentration of the metal salt A in the polishing composition (when a plurality of metal salts A are contained, the total concentration of them) C1 [mol / L] to the concentration of the oxidizing agent (when a plurality of oxidizing agents are contained, the total concentration of them) C2 [mol / L] is preferably 0.001 or more, more preferably 0.005 or more, even more preferably 0.01 or more, and particularly preferably 0.02 or more, from the viewpoint of easily exerting the effect of the present invention. In some embodiments, C1 / C2 may be, for example, 0.08 or more, typically 0.12 or more. The upper limit of C1 / C2 is not particularly limited, but is preferably about 100 or less. The above C1 / C2 is typically 70 or less, preferably 30 or less, more preferably 10 or less, even more preferably 1 or less, and particularly preferably 0.5 or less. In some embodiments, C1 / C2 may be, for example, 0.3 or less. Such a ratio of the concentrations of the metal salt A and the oxidizing agent (C1 / C2) can more suitably improve the polishing removal rate.

[0044] (Other Ingredients) The polishing composition disclosed herein may further contain, as necessary, known additives that can be used in polishing compositions (for example, polishing compositions used for polishing high-hardness materials such as silicon carbide), such as chelating agents, thickening agents, dispersants, surface protective agents, wetting agents, surfactants, rust inhibitors, preservatives, and antifungal agents, within the scope that does not impair the effects of the present invention. The content of the above additives may be appropriately set according to the purpose of their addition, and detailed explanations are omitted since they do not characterize the present invention.

[0045] (pH) The pH of the polishing composition is usually about 2 to 12. When the pH is in the above range, a practical polishing removal rate is easily achieved. In some embodiments, the pH may be 2.0 or more, 2.5 or more, 3.0 or more, 4.0 or more, 5.0 or more, or 5.5 or more. The upper limit of the pH is not particularly limited, but in some embodiments, the pH may be 12.0 or less, 10.0 or less, 9.0 or less, less than 9.0, 8.0 or less, less than 8.0, 7.0 or less, less than 7.0, 6.0 or less, or less than 6.0. In some embodiments, the pH may be 5.0 or less, less than 5.0, 4.0 or less, or less than 4.0.

[0046] The method of preparing the polishing composition disclosed herein is not particularly limited.For example, it is advisable to use a well-known mixing device such as a blade type agitator, an ultrasonic disperser, a homomixer, etc. to mix each component contained in the polishing composition.The manner of mixing these components is not particularly limited, and for example, all components may be mixed at once, or may be mixed in a suitably set order. The polishing composition disclosed herein may be a one-component type or a multi-component type including a two-component type. For example, the polishing composition may be configured so that part A containing some of the components (e.g., components other than water) of the polishing composition and part B containing the remaining components are mixed and used for polishing an object to be polished. These are stored separately, for example, before use, and can be mixed at the time of use to prepare a one-component polishing composition. When mixed, water for dilution or the like can be further mixed.

[0047] <Object to be polished> The polishing composition disclosed herein is suitable for polishing materials having a Vickers hardness of 1500Hv or more (also called high-hardness materials). The polishing composition disclosed herein can realize a surface having high smoothness for the high-hardness materials under both low and high pressure conditions. The Vickers hardness of the high-hardness material is preferably 1800Hv or more (e.g., 2000Hv or more, typically 2200Hv or more). The upper limit of the Vickers hardness is not particularly limited, and may be about 7000Hv or less (e.g., 5000Hv or less, typically 3000Hv or less). In this specification, the Vickers hardness can be measured based on JIS R 1610:2003. The international standard corresponding to the above JIS standard is ISO 14705:2000.

[0048] Materials having a Vickers hardness of 1500Hv or more include diamond, sapphire (aluminum oxide), silicon carbide, boron carbide, tungsten carbide, silicon nitride, titanium nitride, etc. The polishing composition disclosed herein can be preferably applied to the single crystal surface of the above materials. In particular, the polishing surface is preferably composed of silicon carbide. Silicon carbide is expected to be a semiconductor material with low power loss and excellent heat resistance, etc., and the practical advantage of improving its surface properties is particularly great. The polishing composition disclosed herein is particularly preferably applied to the single crystal surface of silicon carbide.

[0049] The high-hardness material in the technology disclosed herein is typically in the form of a substrate, and may be in the form of a wafer. The thickness of such a substrate is appropriately set according to the size (diameter, etc.) and the like. The thickness of the substrate is usually about 100 μm or more, and is appropriately about 300 μm or more (for example, about 350 μm or more), and may be, for example, about 500 μm or more. The thickness is usually about 1500 μm or less, and is appropriately about 1000 μm or less, and is preferably about 800 μm or less, and may be, for example, about 500 μm or less (typically less than 500 μm), or may be about 400 μm or less. In polishing a substrate of a high-hardness material having such a thickness, the effect of the technology disclosed herein (prevention of damage to the substrate, etc.) is preferably realized.

[0050] <Polishing method> The polishing composition disclosed herein can be used to polish a substrate made of a high-hardness material, for example, in a manner including the following operations. That is, prepare a polishing liquid (slurry) containing any of the polishing compositions disclosed herein. The preparation of the polishing liquid may include adjusting the concentration (e.g., dilution), adjusting pH, etc., of the polishing composition to prepare the polishing liquid. Alternatively, the polishing composition may be used as it is as the polishing liquid. In addition, in the case of a multi-agent type polishing composition, the preparation of the polishing liquid may include mixing the agents, diluting one or more agents before the mixing, diluting the mixture after the mixing, etc. The polishing liquid is then supplied to the substrate, and the substrate is polished by a conventional method performed by a person skilled in the art. For example, the substrate is set in a general polishing device, and the polishing liquid is supplied to the polishing surface of the substrate through the polishing pad of the polishing device. Typically, the polishing pad is pressed against the polishing surface of the substrate while the polishing liquid is continuously supplied, and the two are moved relatively (for example, rotated). The polishing of the substrate is completed through this polishing process.

[0051] According to this specification, a method for polishing a high hardness material and a method for manufacturing a substrate made of a high hardness material using the method are provided. The polishing method is characterized by including a step of polishing a substrate using the polishing composition disclosed herein. Some preferred embodiments of the polishing method include a step of performing pre-polishing (pre-polishing step) and a step of performing finish polishing (finish polishing step). In some embodiments, the pre-polishing step is a polishing step arranged immediately before the finish polishing step. The pre-polishing step may be a single-stage polishing step, or may be a multiple-stage polishing step of two or more stages. The finish polishing step referred to here is a step of performing finish polishing on a substrate that has been subjected to pre-polishing, and refers to a polishing step arranged at the end (i.e., the most downstream side) of the polishing steps performed using a polishing slurry containing particles such as abrasive grains. In the polishing method including the pre-polishing step and the finish polishing step, the polishing composition disclosed herein may be used in one of the pre-polishing steps, may be used in the finish polishing step, or may be used in both the pre-polishing step and the finish polishing step.

[0052] Preliminary polishing and finish polishing can be performed by either a single-sided polishing machine or a double-sided polishing machine. In a single-sided polishing machine, a substrate is attached to a ceramic plate with wax, a holder called a carrier is used to hold the substrate, and a polishing pad is pressed against one side of the substrate while supplying a polishing composition, and the two are moved relatively to polish one side of the substrate. The movement is, for example, a rotational movement. In a double-sided polishing machine, a substrate is held by a holder called a carrier, and a polishing pad is pressed against the opposing side of the substrate while supplying a polishing composition from above, and the two are rotated in a relative direction to polish both sides of the substrate simultaneously.

[0053] The above polishing conditions are appropriately set based on the type of material to be polished, the target surface properties (specifically, smoothness), the polishing removal rate, etc., and are therefore not limited to specific conditions. For example, the polishing pressure is not limited to specific conditions, since polishing using the polishing composition disclosed herein can achieve a high polishing removal rate and a surface with high smoothness under both low and high pressure conditions. The polishing composition disclosed herein can be used in a wide pressure range, for example, from 10 kPa to 150 kPa. More specifically, the polishing composition disclosed herein can not only be preferably used for polishing under low pressure conditions, for example, from 10 kPa to less than 30 kPa, but also can efficiently achieve a polished surface of a high-hardness material having higher smoothness while suppressing the load on the polishing surface and preventing damage to the substrate, for example, under high pressure conditions, for example, from 30 kPa to 150 kPa. In some preferred embodiments, the polishing composition disclosed herein can achieve a better effect in polishing under the above high pressure conditions.

[0054] The polishing pad used in each polishing step disclosed herein is not particularly limited. For example, any of nonwoven fabric type, suede type, and hard foam polyurethane type may be used. In some embodiments, a suede type polyurethane polishing pad or a hard foam polyurethane type polishing pad is used, and a hard foam polyurethane type polishing pad can be preferably adopted. In the embodiment using the above polishing pad, the effect of reducing friction between the polishing surface and the polishing pad, which is an effect of the technology disclosed herein, is preferably exhibited. Note that the polishing pad used in the technology disclosed herein is a polishing pad that does not contain abrasive grains.

[0055] The substrate polished by the method disclosed herein is typically washed after polishing. This washing can be performed using a suitable washing liquid. The washing liquid to be used is not particularly limited, and any known or commonly used one can be appropriately selected and used.

[0056] The polishing method disclosed herein may include any other steps in addition to the pre-polishing step and the finish polishing step. Such steps include a mechanical polishing step and a lapping step performed before the pre-polishing step. The mechanical polishing step polishes the substrate using a liquid in which diamond abrasive grains are dispersed in a solvent. In some preferred embodiments, the dispersion does not contain an oxidizing agent. The lapping step is a step in which the surface of a polishing platen, for example a cast iron platen, is pressed against the substrate to polish it. Therefore, a polishing pad is not used in the lapping step. The lapping step is typically performed by supplying abrasive grains between the polishing platen and the substrate. The abrasive grains are typically diamond abrasive grains. The polishing method disclosed herein may also include an additional step before the pre-polishing step or between the pre-polishing step and the finish polishing step. The additional step is, for example, a cleaning step or a polishing step.

[0057] The arithmetic mean surface roughness Ra of the surface after polishing using the polishing composition disclosed herein is not limited to a specific range because it may vary depending on the use of the substrate, the type of material to be polished, the polishing stage, etc. It is appropriate to make the Ra of the surface after polishing, for example, about 10 nm or less. In some preferred embodiments, the Ra of the surface after polishing is 1 nm or less, more preferably less than 0.1 nm, and even more preferably less than 0.05 nm. According to the technology disclosed herein, a substrate having a surface with high smoothness as described above can be realized. The Ra of the surface (polished surface) of the polished surface of the substrate is measured by the method described in the Examples below.

[0058] <Substrate manufacturing method> The technology disclosed herein may include a method for manufacturing a substrate, which includes a polishing step using any of the polishing methods described above, and the provision of a substrate manufactured by the method. The method for manufacturing the substrate is, for example, a method for manufacturing a silicon carbide substrate. That is, according to the technology disclosed herein, a method for manufacturing a substrate, which includes polishing a substrate made of a high-hardness material by applying any of the polishing methods disclosed herein, and a substrate manufactured by the method are provided. According to the manufacturing method, a substrate with improved surface quality, for example a silicon carbide substrate, can be efficiently provided. EXAMPLES

[0059] Some examples of the present invention will be described below, but it is not intended that the present invention be limited to those shown in these examples. In the following description, "%" is based on weight unless otherwise specified.

[0060] <Preparation of Polishing Composition> (Examples 1 to 6 and Comparative Examples 1 and 2) The particles, the oxidizing agent, and the deionized water (DIW) were mixed to prepare the polishing composition according to each example. The particles were colloidal silica with an average primary particle diameter of 43 nm (average secondary particle diameter of 57 nm), and the oxidizing agent was potassium permanganate (KMnO4). The particle concentration in the polishing composition was as shown in Table 1, and the potassium permanganate concentration was 0.08 mol / L. The pH of the polishing composition was adjusted to 3.0 using nitric acid.

[0061] (Examples 7 to 9) The particles, the oxidizing agent, the metal salt and the deionized water (DIW) were mixed to prepare the polishing composition according to each example. The particles were colloidal silica with an average primary particle diameter of 43 nm (average secondary particle diameter of 57 nm), the oxidizing agent was potassium permanganate (KMnO4), and the metal salt was calcium nitrate. The particle concentration in the polishing composition was as shown in Table 2, the potassium permanganate concentration was 0.08 mol / L, and the calcium nitrate concentration was 0.0125 mol / L. The pH of the polishing composition was adjusted to 3.0 using nitric acid.

[0062] <Substrate polishing> A SiC wafer was pre-polished using a pre-polishing composition containing alumina abrasive grains. The pre-polished surface was polished under the following polishing conditions using the polishing composition of each example as it is as a polishing liquid. The polishing was performed under two conditions, low pressure and high pressure, as shown below. [Policing conditions] Polishing equipment: Fujikoshi Machine Industry Co., Ltd., model "RDP-500" Polishing pad: Nitta Haas "SUBA800XY" Grinding pressure: (low pressure) 19.6kPa (High pressure) 39.2kPa Polishing fluid supply rate: 20mL / min Plate rotation speed: 100 rpm Head rotation speed: 100 rpm Polishing time: 1 hour Substrate: SiC wafer (conductivity type: n-type, crystal type 4H-SiC, off-angle of the main surface (0001) relative to the C-axis: 4°), 2 inches, 1 piece / batch Polishing solution temperature: 23℃

[0063] <Evaluation of polishing removal rate> Under the above-mentioned polishing conditions, a SiC wafer was polished using each polishing composition, and the polishing removal rate was calculated according to the following formulas (1) and (2). Note that the corresponding columns in Tables 1 and 2 show the polishing removal rate as a ratio when the polishing removal rate of Comparative Example 1 at low pressure is taken as 100. (1) Polishing stock removal [cm] = difference in weight of SiC wafer before and after polishing [g] / SiC density [g / cm 3 ](=3.21g / cm 3 ) / polished area [cm 2 ](=19.62cm 2 ) (2) Polishing removal rate [nm / h] = Polishing removal amount [cm] × 10 7 / Polishing time (=1 hour)

[0064] <Evaluation of friction coefficient> Under the above polishing conditions, the friction coefficient between the polishing surface and the polishing pad when the SiC wafer was polished using the polishing composition of each example was measured. The value output from the polishing apparatus was used as the friction coefficient. The friction coefficient was measured in the above polishing using a template using a suede backing material as the wafer holding part, and the wafer was attached so that the protrusion height was 200 μm or more, and the wafer was kept in a water-tensioned state against the suede material. In addition, the relevant columns of Tables 1 and 2 are listed as a ratio when the friction coefficient of Comparative Example 1 at low pressure is set to 100.

[0065] <Smoothness> After polishing a SiC wafer using the polishing composition of each example under the above polishing conditions, the smoothness of the polished surface was evaluated as follows. An atomic force microscope (AFM; model "XE-HDM", manufactured by Park Systems Co., Ltd.) was used to evaluate the smoothness. Specifically, the surface roughness Ra (nm) of 22 points on the wafer surface was measured under the condition of a measurement area of ​​10 μm × 10 μm, and the average value was calculated. Note that the corresponding columns in Tables 1 and 2 show the results of evaluating the arithmetic mean surface roughness Ra (nm) of less than 0.05 nm as "pass" and the results of evaluating the arithmetic mean surface roughness Ra (nm) of 0.05 nm or more as "fail."

[0066] [Table 1]

[0067] [Table 2]

[0068] As shown in Table 1, the polishing compositions of Examples 1 to 6, which contain particles and an oxidizing agent and have a particle content of less than 400 ppm, had a reduced friction coefficient at high pressure and excellent surface quality of the polished surface, compared with the polishing composition of Comparative Example 1, which does not contain particles. Moreover, Examples 1 to 6 had excellent surface quality at low and high pressures, compared with Comparative Example 2, which has a particle content of 500 ppm.

[0069] As shown in Table 2, the polishing compositions of Examples 7, 8, and 9, which further contained a metal salt in addition to the polishing compositions of Examples 2, 5, and 6, respectively, further improved the polishing removal rate compared to the examples that did not contain a metal salt. From the above results, it can be seen that the polishing composition disclosed herein can achieve a polished surface that is as smooth or smooth as that of a polishing composition that does not contain abrasive grains when polishing high-hardness materials such as SiC, and can be used preferably under both low-pressure and high-pressure conditions.

[0070] Although the specific examples of the present invention have been described in detail above, these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples exemplified above.

Claims

1. A polishing composition for polishing a material having a Vickers hardness of 1500 Hv or more, particles; and an oxidizing agent; The content of said particles is less than 400 ppm, A polishing composition, wherein the material having a Vickers hardness of 1500 Hv or more is silicon carbide.

2. A polishing composition for polishing a material having a Vickers hardness of 1500 Hv or more, comprising: particles; and an oxidizing agent; The content of said particles is less than 400 ppm, A polishing composition, wherein the oxidizing agent is a permanganate.

3. A polishing composition for polishing a material having a Vickers hardness of 1500 Hv or more, comprising: particles; and an oxidizing agent; The content of said particles is less than 400 ppm, The polishing composition further comprises a metal salt A, wherein the metal salt A is calcium nitrate.

4. The polishing composition according to any one of claims 1 to 3, wherein the particles have an average aspect ratio of 1.5 or less.

5. The polishing composition according to any one of claims 1 to 4, wherein the particles are silica particles.

6. A polishing method comprising the step of polishing a material having a Vickers hardness of 1500 Hv or more with the polishing composition according to any one of claims 1 to 5.

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