Method and apparatus for microwave processing of polymeric materials - Patents.com

Abstract

Provided herein are methods and apparatus for curing a substrate or polymer using variable microwave frequencies. In some embodiments, the method of curing a substrate or polymer using variable microwave frequencies comprises contacting the substrate or polymer with a plurality of predetermined, discrete microwave energy bandwidths or a plurality of predetermined, discrete microwave energy frequencies to cure the substrate or polymer.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to apparatus and methods for processing materials using microwave energy, and more particularly, to curing substrates, such as polymers, using microwave energy. [Background technology]

[0002] Layers of various conductive and non-conductive polymeric materials are applied to semiconductor wafers at various stages of manufacturing. For example, organic materials (e.g., polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB)) or inorganic materials (e.g., silicon, silicon oxide, oxide, oxynitride, nitride, or carbide) are frequently used in semiconductor manufacturing (e.g., redistribution layer process (RDL) or back-end processing (BEOL) of packaging) to form dielectric layers of interconnects. Back-end processing (BEOL) is the second part of IC manufacturing where individual devices are interconnected with wiring on the substrate.

[0003] Typically, substrates such as polymers formed, including dielectric layers / films, have fixed electrical, thermomechanical, and chemical properties. Furthermore, substrates such as the above polymers typically require longer times and higher temperatures to cure when using conventional heating techniques, resulting in throughput issues and creating defects on the substrate. For example, when polyimide is cured using conventional heating techniques, the outer surface of the polymer typically cures faster than the center, which can result in various physical defects such as void formation, reduced modulus, enhanced swelling, solvent entrapment, and reduced mechanical properties such as thermal expansion coefficient. Furthermore, the higher temperatures used in conventional curing techniques result in a lot of warping due to the difference in thermal expansion of materials present during the packaging RDL process.

[0004] Therefore, the present inventors have developed an improved method of forming substrates, such as polymers, that can be cured faster at lower temperatures. Summary of the Invention

[0005] Provided herein are methods of curing a substrate or polymer using variable microwave frequencies, in some embodiments, the methods of curing a substrate or polymer using variable microwave frequencies include contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer.

[0006] In some embodiments, the substrate processing system includes a variable frequency microwave chamber configured to contact a polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or discontinuous microwave frequencies to cure the polymer.

[0007] In some embodiments, the computer readable medium comprises instructions that, when executed, cause the variable frequency microwave processing chamber to perform a method as described in any of the embodiments disclosed herein, in some embodiments, the method includes contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer.

[0008] Other and further embodiments of the present disclosure are described below.

[0009] Embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to the exemplary embodiments thereof as illustrated in the accompanying drawings, which, however, illustrate only typical embodiments of the present disclosure, since the present disclosure may admit of other equally effective embodiments, and therefore should not be considered as limiting in scope. [Brief description of the drawings]

[0010] [Figure 1] 1 is a flow diagram of a method for curing according to some embodiments of the present disclosure; [Diagram 2] 1 is a schematic side view of a processing chamber for a microwave curing process according to some embodiments of the present disclosure. [Diagram 3] 1 is a flow diagram of a method for curing a substrate or a polymer according to some embodiments of the present disclosure. [Figure 4] FIG. 3 is a top view of a processing tool including the apparatus of FIG. 2 according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] To facilitate understanding, the same reference numbers are used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012] Provided herein are embodiments of the present disclosure that include apparatus and methods for curing a substrate or polymer, such as a polymer layer on a substrate, using variable microwave frequencies. For example, the methods of the present disclosure include contacting a substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer. The embodiments of the present disclosure advantageously enable flexible semiconductor material formation processes during manufacturing using variable frequency microwave (VFM) technology to (1) cure materials such as substrates, polymers, or polymer layers at lower temperatures, thus reducing differential thermal expansion to reduce warpage in packaging RDL processes, and / or (2) modify substrates, polymers, or polymer layers to improve electrical (e.g., lower parasitic capacitance, higher breakdown voltage) and thermomechanical (e.g., higher glass transition temperature or higher elongation exhibiting stronger mechanical stress, better thermal conductivity, etc.) properties.

[0013] 1 is a flow diagram of a method 100 for curing a material, such as a substrate, polymer, or polymer layer on a semiconductor substrate, according to some embodiments of the present disclosure. The semiconductor substrate or polymer, such as a polymer layer disposed on a substrate, is placed in a suitable microwave processing chamber, such as discussed below with respect to FIG.

[0014] In some embodiments, a substrate suitable for the curing described herein is crystalline silicon (e.g., Si <100> or Si <111> ), silicon germanium, doped or undoped polysilicon, doped or undoped silicon wafers, patterned or unpatterned wafers, silicon on insulator (SOI), carbon doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, glass, sapphire, and combinations thereof. In some embodiments, inorganic substrates are suitable for curing according to the present disclosure. Non-limiting examples of inorganic substrates include one or more inorganic dielectric materials formed from either silicon, silicon oxide, oxide, oxynitride, nitride, or carbide.

[0015] In embodiments, the substrate may have various dimensions, such as 200 mm, 300 mm, 450 mm, or other dimensions for circular substrates. The substrate may also be any polygonal, square, rectangular, curved, or non-circular workpiece, such as polygonal glass substrates used in the manufacture of flat panel displays. Unless otherwise specified, the implementations and examples described herein are directed to substrates having a diameter of 200 mm. m、 It is carried out on a substrate, such as a 300 mm diameter substrate, or a 450 mm diameter substrate.

[0016] In some embodiments, the substrate for curing herein comprises one or more low-k dielectric layers alone or deposited to a desired thickness on the substrate by any suitable atomic layer deposition process or chemical vapor deposition process. In embodiments, the low-k dielectric layer is generally formed from a material having a low dielectric constant value suitable for an insulating material. Non-limiting materials suitable as low-k dielectric materials may include silicon-containing materials such as, for example, silicon oxide (SiO2), silicon nitride, or silicon oxynitride (SiON), or combinations thereof. In some embodiments, the low-k dielectric material may have a low dielectric constant value of less than about 3.9 (e.g., about 2.5 to about 3.5). In embodiments, the low-k dielectric layer comprises a material comprising one or more of polyimide, polytetrafluoroethylene, parylene, polysilsesquioxane, fluorinated poly(aryl ether), fluorinated amorphous carbon, silicon oxycarbide, and silicon carbide. In some embodiments, the substrate, such as a low-k dielectric layer, comprises silicon oxycarbide, including, for example, silicon oxycarbide, which includes a variety of silicon, carbon, oxygen, and hydrogen containing materials.

[0017] In some embodiments, the polymer or polymer layer is suitable for curing according to the present disclosure. Non-limiting examples of polymers or polymer layers include one or more organic dielectric materials formed from either polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB).

[0018] In some embodiments, the method 100 is performed at ambient or reduced pressure (e.g., about 50 to about 1e-6 Torr or less), such as 1 ATM. The inventors have observed that in some embodiments, curing the polymer in ambient allows more microwave power of the selected effective frequency to be delivered to the process chamber and to the polymer or polymer layer. However, in some embodiments, performing the method 100 at reduced pressure helps drive off solvents, additives, and reaction by-products that form during the curing process. Conventional non-microwave curing is performed at about 1 atmosphere, or at the very least sub-ambient, and therefore uses high temperatures to drive off solvents, additives, or reaction by-products.

[0019] In some embodiments, the method 100 begins at 102 where a substrate or polymer layer on a substrate, such as a polymer requiring curing, is formed of a material such as those listed above. In some embodiments, a substrate, polymer, or polymer layer is deposited having a thickness of about 1.0 micron to about 1000 microns. In some embodiments, the polymer or polymer layer can be a dielectric material, such as one or more of an organic-based dielectric material, such as polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB). In some embodiments, the substrate formed can be an inorganic dielectric material formed from any of oxides, silicon oxides, silicon, oxynitrides, nitrides, or carbides.

[0020] In some embodiments, the substrate, polymer, or polymer layer may further include at least one microwave tunable material, such as (a) a highly polar additive to speed up the curing process and reduce the curing temperature, (b) a microwave responsive additive with certain desired properties (electrical, mechanical and thermal, chemical, etc.), and / or (c) a material that is a non-polar material with certain desired properties, included in the substrate, polymer, or polymer layer or otherwise added to the organic or inorganic dielectric material. Non-limiting examples of polar additives may include water, ethanol, methanol, isopropanol (IPA), acetic acid, acetone, n-propanol, n-butanol, formic acid, propylene, carbonate, ethyl acetate, dimethylsulfoxide, acetonitrile (MECN), dimethylformamide, tetrahydrofuran, and / or dichloromethane. In some embodiments, non-polar additives may include pentane, cyclopentane, hexane, cyclohexane, benzene, toluene, dioxane, chloroform, and / or diethyl ether. In contrast to non-polar additives, polar additives have significantly higher dielectric constants and dipole moments. Similar to water molecules, in the presence of microwave energy, these polar molecules begin to undergo rotational motion (where possible in the available space). Wherever vapors of these solvents may accumulate (even deep within the pores of a porous dielectric film), microwave energy has the ability to agitate these molecules and cause reactions. In embodiments, process conditions remain below the boiling point of the solvent or reagent to allow additional rotational motion within the pores before moving to higher process temperatures.

[0021] The range of frequencies within the electromagnetic spectrum from which suitable microwave frequencies for curing according to the present disclosure can be selected ranges from 300 GHz to 300 MHz, or in some embodiments, from 1 GHz to 100 GHz. In some embodiments, the substrate, polymer, or polymer layer processed according to the present disclosure is exposed to microwave energy that includes a range of frequencies suitable for curing the substrate, polymer, or polymer layer that includes two or more bandwidths, or that exhibit increased reactivity or absorption of two or more bandwidths. The bandwidths and specific frequencies therein can be preselected for curing. At 104, a decision is made to identify a plurality of discrete microwave energy bandwidths or a plurality of predetermined discrete microwave energy frequencies for curing the polymer layer. In embodiments, the absorption bands of materials such as substrates, polymers, or polymer layers are examined to determine which microwave energy bandwidths or microwave energy frequencies promote efficient curing and to exclude microwave energy bandwidths or microwave energy frequencies that are less efficient or not absorbed by the substrate, polymer, or polymer layer of interest. In some embodiments, the absorption bands of the substrate, polymer, or polymer layer are evaluated by methods known in the art for determining microwave absorption properties of materials, such as those described in Rubris et al., Dielectric Characteristics and Microwave Absorption of Graphene Composite Materials, Materials 9,825 (2016). In embodiments, details are provided for determining or predetermining multiple discrete microwave energy bandwidths suitable for curing the polymer layer by measuring microwave reflection and absorption in the substrate, polymer, or polymer layer. In embodiments, details are provided for determining or predetermining multiple discrete microwave energy frequencies suitable for curing the polymer layer by measuring microwave reflection and absorption in the substrate, polymer, or polymer layer. According to the present disclosure, two or more discrete microwave energy bandwidths refer to bandwidths having one or more gaps between the bandwidths.For example, the discontinuous microwave energy bandwidths may have a first bandwidth in a low frequency range and a second bandwidth in a second frequency range, where the first and second bandwidths do not overlap and do not share frequency range limits. Non-limiting examples of discontinuous microwave energy bandwidths include a first bandwidth of 5.25 GHz to about 5.85 GHz and a second bandwidth of 5.95 GHz and 6.22 GHz, or, in embodiments, a first bandwidth of 5.25 GHz to about 5.85 GHz, a second bandwidth of 5.95 GHz and 6.22 GHz, and a third bandwidth of 6.4 GHz to 6.88 GHz. In each of these examples, microwave energy at frequencies or frequency ranges between the recited bandwidths is not provided during curing according to the present disclosure. In some embodiments, the plurality of predetermined discontinuous microwave energy bandwidths includes 2 to 20 predetermined discontinuous microwave energy bandwidths.

[0022] According to the present disclosure, two or more or a plurality of discontinuous microwave energy frequencies refer to frequencies having one or more gaps between the frequencies. For example, the discontinuous microwave energy frequencies may have a first frequency that is lower than a second frequency, where the first and second frequencies do not overlap and are not adjacent to each other in the electromagnetic spectrum. Non-limiting examples of discontinuous microwave energy frequencies include a first frequency of 5.25 GHz and a second frequency of 5.95 GHz, or, in embodiments, a first frequency of 5.27 GHz, a second frequency of 5.97 GHz, and a third frequency of 6.4 GHz. In each of these examples, microwave energy at frequencies between the recited frequencies is not provided during curing according to the present disclosure. In some embodiments, the plurality of predetermined discontinuous microwave energy frequencies includes 2 to 20 predetermined discontinuous microwave energy frequencies.

[0023] Based on the material absorption characteristics, one skilled in the art can correlate the absorption bands with microwave delivery over a wide frequency range and determine or select suitable incident discontinuous microwave energy frequencies and / or discontinuous microwave energy bandwidths for use in accordance with the present disclosure. For example, at 106, the process sequence includes selecting a plurality of discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies suitable for curing in accordance with the present disclosure. In an embodiment, the selected discontinuous microwave energy bandwidths or frequencies include bandwidths or frequencies that are highly absorbed by the substrate or polymer of interest and exclude bandwidths or frequencies that are poorly absorbed.

[0024] At 108, the substrate, polymer, or polymer layer is contacted with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate, polymer, or polymer layer. In some embodiments, the substrate, polymer, or polymer layer is contacted with a plurality of predetermined, discontinuous microwave energy bandwidths, including between 2 and 20 predetermined, discontinuous microwave energy frequencies. In some embodiments, the substrate, polymer, or polymer layer is contacted with a plurality of predetermined, discontinuous microwave energy frequencies, including between 2 and 20 predetermined, discontinuous microwave energy frequencies. In some embodiments, contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths to cure the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence. For example, curing may be performed by hopping between 2 to 20 predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence without providing microwave energy in the gaps between the predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies.

[0025] In some embodiments, the substrate, polymer, or polymer layer is cured at a temperature below 200 degrees Celsius, for example between 100 degrees Celsius and 200 degrees Celsius. In some embodiments, the substrate, polymer, or polymer layer is cured for 1 minute to 180 minutes, for example between 1 minute and 60 minutes. In embodiments, contact with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies heats the substrate (e.g., semiconductor substrate), polymer, or polymer layer to heat the substrate, polymer, or polymer layer to a first temperature. In some embodiments, the substrate, polymer, or polymer layer is heated from about room temperature (e.g., about 25 degrees Celsius) to a first temperature (i.e., soaking temperature) of about 100 degrees Celsius to about 200 degrees Celsius. In some embodiments, the substrate, polymer, or polymer layer is heated to remove residual solvent in the polymer layer. In some embodiments, the substrate, polymer, or polymer layer is heated from room temperature to a first temperature at a first rate of about 0.01 degrees Celsius / second to about 4 degrees Celsius / second, for example, about 2 degrees Celsius / second. In some embodiments, the substrate, polymer, or polymer layer is maintained at the first temperature for a first period of time sufficient to remove residual solvent. In some embodiments, the first period of time is about 1 minute to about 180 minutes, for example, 1 minute to 60 minutes. Furthermore, in some embodiments, the substrate, polymer, or polymer layer is maintained at the first temperature for a first period of time selected to adjust or control a material property of the substrate, polymer, or polymer layer.

[0026] In some embodiments, the temperature of the substrate, polymer, or polymer layer is controlled by the amount of microwave energy applied to the substrate, polymer, or polymer layer as a plurality of predetermined, discontinuous microwave energy bandwidths or as a plurality of predetermined, discontinuous microwave energy frequencies, hi embodiments, pre-selection of the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies efficiently applies microwave energy to the polymer, polymer layer, and / or semiconductor substrate.

[0027] In some embodiments, the substrate, polymer, or polymer layer is subjected to preselected microwave energy from a source at a microwave frequency ranging from about 300 GHz to 300 MHz. For example, a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies are provided at a microwave frequency ranging from 300 GHz to 300 MHz. In some embodiments, the substrate, polymer, or polymer layer is subjected to microwave energy, where the plurality of predetermined discontinuous microwave energy bandwidths or the plurality of predetermined discontinuous microwave energy frequencies are from a broad C-band source having a microwave frequency ranging from about 5.85 GHz to about 6.65 GHz. In some embodiments, the sweep rate is about 25.0 microseconds / frequency to 1000 microseconds / frequency across 4096 frequencies in the C-band.

[0028] In some embodiments, at 109, the material properties of the substrate, polymer, or polymer layer can be optionally further tuned by adjusting different tuning knobs. Examples of knobs / controls that can be adjusted for tuning purposes can include controls that control chamber processing parameters such as frequency, power, temperature, pressure, waveguide configuration, chamber configuration, auxiliary hardware for tuning microwave distribution within the chamber, etc. In some embodiments, the variable microwave frequency, or other chamber processing parameters, can be tuned to selectively heat a particular component(s) of the substrate (i.e., a particular layer, or a particular structure formed in the substrate or polymer layer, etc.) or the processing chamber itself. In some embodiments, the variable frequency microwaves described herein are suitable for activation of chemical functional groups, or preselected chemical functional groups or nanoparticles in the substrate or polymer. In some embodiments, the variable frequency microwaves described herein are suitable for activation of chemical functional groups, or preselected chemical functional groups or nanoparticles in the epoxy. In embodiments, the microwaves can include knobs that vary the bandwidth or frequency of the microwave energy in a predetermined discontinuous pattern.

[0029] If additional polymer layers are to be formed at 110, the method returns to 102 and the method is repeated again until all layers have been formed and tuned to the desired properties to form the semiconductor structure. If additional polymer layers are not to be formed at 110, the method ends at 112.

[0030] The method 100 advantageously produces semiconductor structures having a cured substrate, polymer, or polymer layer and that may have tunable electrical material properties (dielectric constant, loss factor, loss tangent, breakdown voltage, etc.), tunable mechanical material properties (e.g., elongation, modulus, tensile strength, etc.), tunable thermal material properties (CTE, thermal conductivity, 5% weight loss, thermal stability, etc.), and tunable chemical material properties (resistance to various chemicals).

[0031] In some embodiments, the above methods can be used to form multiple polymer layers on a substrate using variable microwave frequencies as described herein, each of the multiple polymer layers can be cured and can include at least one base dielectric material and at least one microwave tunable material, and different variable frequency microwave energy is applied to each of the multiple polymer layers, with each respective one of the multiple polymer layers being tuned to exhibit different material properties than adjacent layers.

[0032] FIG. 2 illustrates a suitable microwave processing chamber 200 for carrying out the method 100 described above. For example, the microwave processing chamber 200 can be configured to contact a substrate, polymer, or polymer layer with a plurality of discrete microwave energy bandwidths or a plurality of discrete microwave energy frequencies sufficient to cure the substrate, polymer, or polymer layer. In some embodiments, the microwave processing chamber 200 includes a cylindrical, or in some embodiments, octagonal, body, such as body 202. In some embodiments, the body 202 has a sufficient thickness to be used as a microwave chamber. In some embodiments, the body 202 includes a cylindrical or octagonal cavity, such as cavity 204 having a first volume 206. One or more substrates 210, polymers, or polymer layers, such as semiconductor wafers or other substrates, having a material to be microwave cured can be placed in the cavity 204 during the curing operation. A top 218 of the body 202 includes a lid 220 for sealing the first volume 206. In some embodiments, the top 218 does not include a lid, but may have a metal mesh door to insulate against microwave energy. In some embodiments, the waveguide 209 may enter the chamber through the lid 220 or the bottom. In some embodiments, a liner 211 may be included surrounding the first volume 206. In embodiments, the liner is cylindrical or octagonal and configured to attenuate or modulate microwave energy within the first volume 206. In embodiments, the liner 211 is configured to enhance thermal conditions of the substrate 210, polymer, or polymer layer.

[0033] In some embodiments, the body 202 is adapted to receive variable frequency microwave energy including a plurality of discrete microwave energy bandwidths or a plurality of discrete microwave energy frequencies sufficient for curing a substrate or polymer according to the present disclosure. The body 202 further includes a plurality of openings 208 or a top opening 207 fluidly coupled to the first volume 206. In embodiments, the plurality of openings 208 or the top opening 207 may be of different hole sizes to vary gas flow and may extend through the lid and / or the body 202. In some embodiments, the plurality of openings 208 facilitate the delivery of microwave energy to the first volume 206. The plurality of openings 208 are coupled to a suitable variable frequency microwave source 238, such as a microwave source configured to provide a plurality of predetermined discrete microwave energy bandwidths or a plurality of predetermined discrete microwave energy frequencies sufficient for curing a substrate, polymer, or polymer layer according to the present disclosure. In some embodiments, each opening 208 may be rectangular. In some embodiments, each opening 208 may include an angled sidewall that widens the opening on the side of the opening that faces the first volume 206. In some embodiments, the openings 208 are staggered or spaced apart along the body 202. In some embodiments, the body 202 includes four openings 208, two of which are oppositely positioned along the body 202, and two other openings 208 are oppositely positioned along the body 202 but are not opposite the first two openings 208. In some embodiments, each opening 208 is a single opening along the body 202. In some embodiments, each opening 208 includes multiple openings along the body 202.

[0034] In some embodiments, the body 202 includes one or more ports 212 fluidly coupled to the first volume 206. One or more temperature sensors 214, 216 are disposed in the ports 212 to measure the temperature of one or more semiconductor substrates in the first volume 206. The temperature sensors 214, 216 are coupled to a PID controller 236, which is coupled to a variable frequency microwave source 238 to control the amount of microwave power provided to the microwave processing chamber 200. In embodiments, temperature control can be achieved using IR sensors, thermocouples / fiber optics by connecting to a wafer support or other components in the processing chamber. In some embodiments, an exhaust (not shown) can be coupled to the body 202 and fluidly coupled to the first volume 206 to create a reduced pressure in the first volume 206 suitable for performing the method 100.

[0035] In some embodiments, the microwave processing chamber 200 further includes a substrate transfer apparatus 222 having a lower chamber 224. The lower chamber 224 is disposed below and coupled to the body 202. The lower chamber 224 includes a second volume 226 that holds one or more substrates 210 (such as semiconductor substrates, polymers, or polymer layers). The second volume 226 is fluidly coupled to the first volume 206. In some embodiments, the one or more substrates 210, e.g., polymers or polymer layers, are aligned parallel to one another in a stacked configuration.

[0036] A lift mechanism 228 is provided to lift the one or more substrates 210 from the lower chamber 224 to the first volume 206 of the cavity 204. The lift mechanism 228 can be any suitable lift mechanism, such as an actuator, a motor, etc. In some embodiments, the lift mechanism 228 is coupled to a substrate support 230 that can be disposed in the lower chamber 224 or moved into the first volume 206 of the cavity 204.

[0037] When one or more substrates 210 are lifted into the first volume 206 of the cavity 204, a lower plate 232 coupled to the substrate support 230 seals the second volume 226 of the lower chamber 224 from the first volume 206 of the cavity 204 to prevent microwave leakage and maintain a predetermined pressure within the first volume 206. The lower plate 232 abuts or mates with the adapter 234 such that there is no or minimal gap between the lower plate 232 and the adapter 234, thereby sealing the first volume 206. The adapter 234 is coupled to an inner surface of the lower chamber 224.

[0038] FIG. 3 shows a flow diagram of a method for curing a substrate, polymer, or polymer layer according to some embodiments of the present disclosure. In some embodiments, a method 300 for curing a substrate, polymer, or polymer layer on a substrate using variable microwave frequencies may optionally include forming a polymer layer on the substrate. In an embodiment, the method 300 begins with contacting the substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer 302. In some embodiments, the substrate or polymer, e.g., the polymer layer, is cured at a temperature below 500 degrees Celsius or below 200 degrees Celsius, e.g., between 50 degrees Celsius and 200 degrees Celsius. In some embodiments, the substrate or polymer, e.g., the polymer layer, is cured for 1 minute to 60 minutes. In some embodiments, the plurality of predetermined discontinuous microwave energy bandwidths includes 2 to 20, or 5 to 10 predetermined discontinuous microwave energy bandwidths. In some embodiments, the plurality of predetermined, discontinuous microwave energy frequencies comprises 2 to 20, or 5 to 10, predetermined, discontinuous microwave energy frequencies. In some embodiments, contacting the substrate or polymer, e.g., a polymer layer, with a plurality of predetermined, discontinuous microwave energy bandwidths to harden the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence. In some embodiments, contacting the polymer layer with a plurality of predetermined, discontinuous microwave energy frequencies to harden the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence. In some embodiments, contacting the polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths to harden the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence and for a predetermined period of time. In some embodiments, contacting the polymer layer with a plurality of predetermined, discontinuous microwave energy frequencies to harden the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence and for a predetermined period of time.In some embodiments, at least one material property of the polymer layer is tuned by adjusting one or more tuning knobs. In embodiments, a microwave configured to perform the method of the present disclosure includes tuning knobs configured to adjust at least one of frequency, power, temperature, pressure, waveguide configuration, chamber configuration, or microwave distribution in the chamber. In some embodiments, the plurality of predetermined discontinuous microwave energy bandwidths or the plurality of predetermined discontinuous microwave energy frequencies are provided at microwave frequencies ranging from 300 GHz to 300 MHz. In some embodiments, contacting the polymer layer with the plurality of predetermined discontinuous microwave energy bandwidths or the plurality of predetermined discontinuous microwave energy frequencies to cure the polymer layer is performed at about 100 degrees Celsius to about 200 degrees Celsius. In some embodiments, the plurality of predetermined discontinuous microwave energy bandwidths or the plurality of predetermined discontinuous microwave energy frequencies are provided at a sweep rate of about 25.0 microseconds / frequency to 1000 microseconds / frequency. In some embodiments, the curing is performed in a microwave processing chamber under reduced pressure. In some embodiments, the polymer layer is one of an organic dielectric material formed from either polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic, epoxy, or benzocyclobutene (BCB), or an inorganic dielectric material formed from either an oxide, oxynitride, nitride, or carbide.

[0039] In some embodiments, the method further comprises determining a plurality of discrete microwave energy bandwidths or a plurality of predetermined discrete microwave energy frequencies for curing the polymer layer, hi some embodiments, the method further comprises selecting a plurality of discrete microwave energy bandwidths or a plurality of predetermined discrete microwave energy frequencies.

[0040] Figure 4 is a schematic top view of an exemplary integrated system 400 including one or more of the deposition processing chamber 101 and / or microwave processing chamber 200 configured for use in accordance with the present disclosure shown in Figure 2. In some embodiments, the integrated system 400 can be a CENTURA® integrated processing system available from Applied Materials, Inc. of Santa Clara, Calif. Other processing systems (including from other manufacturers) can be adapted to benefit from the present disclosure.

[0041] In some embodiments, the integrated system 400 includes a vacuum-tight processing platform, e.g., processing platform 404, a factory interface 402, and a system controller 444. The processing platform 404 includes at least one deposition processing chamber 101, at least one microwave processing chamber 200, e.g., the microwave processing chamber 200 shown in FIG. 2, and optionally a number of processing chambers 428, 420, 410, and at least one load lock chamber 422 coupled to a reduced pressure substrate transfer chamber, e.g., a transfer chamber 436. Two load lock chambers 422 are shown in FIG. 4. The factory interface 402 is coupled to the transfer chamber 436 by the load lock chamber 422.

[0042] In one embodiment, the factory interface 402 includes at least one docking station 408 and at least one factory interface robot 414 to facilitate transfer of substrates. The docking station 408 is configured to receive one or more Front Opening Unified Pods (FOUPs). Two FOUPs 406A-B are shown in the embodiment of FIG. 4. A factory interface robot 114 having a blade 416 disposed at one end of the factory interface robot 414 is configured to transfer substrates from the factory interface 402 to the processing platform 404 for processing via a load lock chamber 422. Optionally, one or more processing chambers 410, 420, 428, deposition processing chamber 101, microwave processing chamber 200 are connected to a terminal 426 of the factory interface 402 to facilitate processing of substrates from the FOUPs 406A-B.

[0043] Each of the load lock chambers 422 has a first port coupled to the factory interface 402 and a second port coupled to the transfer chamber 436. The load lock chambers 422 are coupled to a pressure control system (not shown) that pumps down and vents the load lock chambers 422 to facilitate passage of substrates between the vacuum environment of the transfer chambers 436 and the substantially ambient (e.g., atmospheric) environment of the factory interface 402.

[0044] The transfer chamber 436 has a decompression robot 430 disposed therein. The decompression robot 430 has a blade 434 capable of transferring the substrate 401 between the load lock chamber 422, the deposition processing chamber 101, the microwave processing chamber 200, and the processing chambers 410, 420, and 428.

[0045] In some embodiments of the integrated system 400, the integrated system 400 can include a deposition processing chamber 101, as well as other processing chambers 410, 420, 428, and a microwave processing chamber 200. In some embodiments, the processing chambers 410, 420, 428 can be deposition chambers, etch chambers, thermal processing chambers, or other similar types of semiconductor processing chambers.

[0046] A system controller 444 is coupled to the integrated system 400. The system controller 444, which may include or be included within the computing device 441, controls the operation of the integrated system 400 using direct control of the processing chambers 410, 420, 428, deposition processing chamber 101, microwave processing chamber 200 of the integrated system 400. Alternatively, the system controller 444 may control the processing chambers 410, 420, 428, deposition processing chamber 101, microwave processing chamber 200, and computers (or controllers) associated with the integrated system 400. During operation, the system controller 444 also enables data collection and feedback from the respective chambers and processing chambers such as the deposition processing chamber 101 and / or microwave processing chamber 200 to optimize the performance of the integrated system 400.

[0047] The system controller 444 generally comprises a central processing unit (CPU) 438, a memory 440, and support circuits 442. The CPU 438 may be any form of general-purpose computer processor that may be used in an industrial environment. The support circuits 442 are conventionally coupled to the CPU 438 and may include cache, clock circuits, input / output subsystems, power supplies, etc. The software routines transform the CPU 138 into a special purpose computer (system controller) 444. The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the integrated system 400.

[0048] In some embodiments, the present disclosure includes an integrated system including a reduced pressure substrate transfer chamber, a variable frequency microwave chamber coupled to the reduced pressure substrate transfer chamber and configured to contact a polymer with a plurality of predetermined discrete microwave energy bandwidths or discrete microwave frequencies to cure the polymer, and an additional chamber coupled to the reduced pressure substrate transfer chamber, the integrated system configured to transfer the polymer from the variable frequency microwave chamber to the additional chamber under reduced pressure, In some embodiments, the additional chamber is a deposition chamber configured to deposit a polymer or polymer layer.

[0049] In some embodiments, the disclosure includes a computer readable medium having stored thereon instructions that, when executed, cause a variable frequency microwave processing chamber to perform a method including forming a polymer layer on a substrate; and contacting the polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the polymer layer.

[0050] In some embodiments, the present disclosure includes a variable frequency microwave processing chamber configured to form a polymer layer on a substrate; and contact the polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the polymer layer.

[0051] In some embodiments, the present disclosure relates to a method of curing a substrate, polymer, or polymer layer on a substrate using variable microwave frequencies, the method comprising contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the polymer layer, e.g., by providing microwave energy to the substrate, polymer, or polymer layer. In some embodiments, the substrate, polymer, or polymer layer is cured at a temperature less than 200 degrees Celsius. In some embodiments, the substrate, polymer, or polymer layer is cured for 1 minute to 60 minutes. In some embodiments, the plurality of predetermined, discontinuous microwave energy bandwidths comprises 2 to 20 predetermined, discontinuous microwave energy bandwidths. In some embodiments, the plurality of predetermined, discontinuous microwave energy frequencies comprises 2 to 20 predetermined, discontinuous microwave energy frequencies. In some embodiments, contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths to cure the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence. In some embodiments, contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy frequencies to cure the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence. In some embodiments, contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths to cure the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence and for a predetermined period of time. In some embodiments, contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy frequencies to cure the polymer layer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence and for a predetermined period of time. In some embodiments, at least one material property of the substrate, polymer, or polymer layer is tuned by adjusting one or more tuning knobs.In some embodiments, contacting the substrate, polymer, or polymer layer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the polymer layer occurs at about 100 degrees Celsius to about 500 degrees Celsius. In some embodiments, contacting the substrate, polymer, or polymer layer includes providing microwave energy to the substrate, polymer, or polymer layer in a microwave processing chamber under reduced pressure. In some embodiments, the substrate, polymer, or polymer layer is one of an organic dielectric material formed from either polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB), or an inorganic dielectric material formed from either an oxide, oxynitride, nitride, or carbide.

[0052] In some embodiments, the method of curing a substrate or polymer using variable microwave frequencies includes contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer. In some embodiments, the substrate or polymer is cured at a temperature less than 200 degrees Celsius. In some embodiments, the substrate or polymer is cured in 1 to 180 minutes. In some embodiments, the plurality of predetermined, discontinuous microwave energy bandwidths includes 2 to 20 predetermined, discontinuous microwave energy bandwidths. In some embodiments, the plurality of predetermined, discontinuous microwave energy frequencies includes 2 to 20 predetermined, discontinuous microwave energy frequencies. In some embodiments, contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths to cure the substrate or polymer further includes hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence. In some embodiments, contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence. In some embodiments, contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths to cure the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence and for a predetermined period of time. In some embodiments, contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence and for a predetermined period of time. In some embodiments, at least one material property of the substrate or polymer is tuned by adjusting one or more tuning knobs configured to adjust at least one of frequency, power, temperature, pressure, waveguide configuration, chamber configuration, or microwave distribution in the chamber.In some embodiments, the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies are provided at microwave frequencies ranging from 300 GHz to 300 MHz. In some embodiments, contacting the substrate or polymer with the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies to cure the substrate or polymer occurs at about 100 degrees Celsius to about 500 degrees Celsius. In some embodiments, the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies are provided at a sweep rate of about 25.0 microseconds / frequency to 1000 microseconds / frequency. In some embodiments, contacting the substrate or polymer includes providing microwave energy to the substrate or polymer in a microwave processing chamber under reduced pressure. In some embodiments, the substrate or polymer is one of an organic dielectric material formed from either polyimide (PI), poly(p-phenylenebenzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB), or an inorganic dielectric material formed from either an oxide, oxynitride, nitride, or carbide. In some embodiments, the polymer is polyimide (PI), poly(p-phenylenebenzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB).

[0053] In some embodiments, the present disclosure relates to a substrate processing system including a variable frequency microwave chamber configured to contact a polymer with a plurality of predetermined, discrete microwave energy bandwidths or discrete microwave frequencies to cure the polymer. In some embodiments, the substrate processing system further includes a reduced pressure substrate transfer chamber to which the variable frequency microwave chamber is coupled; and an additional chamber coupled to the reduced pressure substrate transfer chamber, where the substrate processing system is configured to transfer the polymer from the variable frequency microwave chamber to the additional chamber under reduced pressure.

[0054] In some embodiments, the present disclosure relates to a computer readable medium having stored thereon instructions that, when executed, cause a variable frequency microwave processing chamber to perform a method including contacting a substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to harden the substrate or polymer.

[0055] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A method for curing a substrate or a polymer using variable microwave frequencies, comprising: contacting the substrate or polymer with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave energy frequencies to cure said substrate or polymer; Including, A method wherein at least one material property of the substrate or polymer is tuned by adjusting one or more tuning knobs configured to adjust at least one of frequency, power, temperature, pressure, waveguide configuration, chamber configuration, or microwave distribution within the chamber.

2. The method of claim 1 , wherein the substrate or polymer is cured at a temperature below 200 degrees Celsius.

3. The method of claim 1 , wherein the substrate or polymer is cured for 1 minute to 180 minutes.

4. 2. The method of claim 1, wherein the plurality of predetermined, discontinuous microwave energy bandwidths comprises from 2 to 20 predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies comprises from 2 to 20 predetermined, discontinuous microwave energy frequencies.

5. 10. The method of claim 1, wherein contacting the substrate or polymer with the plurality of predetermined, discontinuous microwave energy bandwidths to cure the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence.

6. 10. The method of claim 1, wherein contacting the substrate or polymer with the plurality of predetermined, discontinuous microwave energy frequencies to harden the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence.

7. 10. The method of claim 1, wherein contacting the substrate or polymer with the plurality of predetermined, discontinuous microwave energy bandwidths to cure the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy bandwidths in a predetermined sequence and for a predetermined period of time.

8. 10. The method of claim 1, wherein contacting the substrate or polymer with the plurality of predetermined, discontinuous microwave energy frequencies to harden the substrate or polymer further comprises hopping between the plurality of predetermined, discontinuous microwave energy frequencies in a predetermined sequence and for a predetermined period of time.

9. The method of claim 1 , wherein the substrate or polymer further comprises at least one microwave tunable material contained within the substrate or polymer.

10. 10. The method of claim 1, wherein the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies are provided at microwave frequencies in the range of 300 GHz to 300 MHz.

11. 10. The method of any one of claims 1 to 9, wherein contacting the substrate or polymer with the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies to harden the substrate or polymer occurs at about 100 degrees Celsius to about 500 degrees Celsius.

12. 10. The method of any one of claims 1 to 9, wherein the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies are provided at a sweep rate of about 25.0 microseconds / frequency to 1000 microseconds / frequency.

13. The method of claim 1, wherein contacting the substrate or polymer comprises supplying microwave energy to the substrate or polymer in a microwave treatment chamber under reduced pressure.

14. 10. The method of any one of claims 1 to 9, wherein the substrate or polymer is one of an organic dielectric material formed from one of polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic, epoxy, or benzocyclobutene (BCB), or an inorganic dielectric material formed from one of oxides, oxynitrides, nitrides, or carbides.

15. The method of any one of claims 1 to 9, wherein the polymer is polyimide (PI), poly(p-phenylene benzobisoxazole) (PBO), phenolic resin, epoxy, or benzocyclobutene (BCB).

16. 10. The method of claim 1, further comprising determining the plurality of predetermined, discontinuous microwave energy bandwidths or the plurality of predetermined, discontinuous microwave energy frequencies for curing the substrate or polymer.

17. The method of claim 16, further comprising selecting the plurality of predetermined discontinuous microwave energy bandwidths or the plurality of predetermined discontinuous microwave energy frequencies.

18. A substrate processing system comprising a variable frequency microwave chamber, comprising: the variable frequency microwave chamber is configured, during use, to contact a polymer disposed within the variable frequency microwave chamber with a plurality of predetermined, discontinuous microwave energy bandwidths or a plurality of predetermined, discontinuous microwave frequencies to cure the polymer; 13. A substrate processing system, comprising: a variable frequency microwave chamber configured to tune at least one material property of the polymer by adjusting one or more tuning knobs configured to adjust at least one of frequency, power, temperature, pressure, waveguide configuration, chamber configuration, or microwave distribution within the chamber.

19. a reduced pressure substrate transfer chamber coupled to the variable frequency microwave chamber; and an additional chamber coupled to the reduced pressure substrate transfer chamber, the substrate processing system configured to transfer the polymer from the variable frequency microwave chamber to the additional chamber under reduced pressure; The substrate processing system of claim 18 further comprising:

20. A computer readable medium having stored thereon instructions that, when executed, cause a variable frequency microwave processing chamber to perform the method of any one of claims 1 to 9.

Images