Substrate liquid processing apparatus and substrate liquid processing method

Abstract

A substrate liquid treatment device comprising: a substrate holding unit for holding a substrate; a rotational drive unit for rotating the substrate being held by the substrate holding unit; a liquid ejection unit including a liquid supply nozzle for ejecting a liquid toward a treatment surface of the substrate; a treatment fluid ejection unit including a treatment fluid supply nozzle for ejecting a mist of treatment fluid toward the treatment surface; a first drive unit for moving the treatment fluid supply nozzle; and a control unit for controlling the treatment fluid ejection unit, the first drive unit, and the liquid ejection unit. The control unit controls the liquid ejection unit to cause the liquid to be ejected from the liquid supply nozzle toward the treatment surface of the substrate being rotated, and also controls the treatment fluid ejection unit and the first drive unit so that the landing position of the treatment fluid from the treatment fluid supply nozzle on the treatment surface with a liquid film including the liquid formed thereon is moved from the outer periphery of the treatment surface toward the center thereof.

Description

[Technical field]

[0001] The present disclosure relates to a substrate liquid processing apparatus and a substrate liquid processing method. [Background technology]

[0002] In the manufacture of semiconductor devices, it is necessary to maintain high levels of cleanliness on the front and back surfaces of semiconductor wafers (hereinafter referred to as "wafers"), particularly on the front surface of the wafer on which the semiconductor devices are formed. In order to maintain high levels of cleanliness on the wafer, the wafer is washed before and after various manufacturing processes.

[0003] In cleaning a wafer, particles can be effectively removed from the surface of the wafer by spraying a mixture of gas and liquid onto the surface of the wafer.

[0004] The substrate cleaning device disclosed in Patent Document 1 discharges a cleaning liquid such as two-fluid onto the surface of the substrate while a liquid film is formed on the surface of the substrate. This prevents the mist of cleaning liquid that bounces off the inside of the cup from directly adhering to the surface of the substrate, thereby suppressing the adhesion of particles to the surface of the substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2003-203892 A Summary of the Invention

[0006] As described above, when a processing liquid such as a cleaning liquid is discharged toward the surface of a substrate (wafer) covered with liquid, the processing liquid may collide with the liquid on the substrate, resulting in liquid splashing. The liquid splashed from the substrate (i.e., the splashed liquid including the liquid and / or processing liquid) may bounce off peripheral members such as a cup positioned around the substrate and land on the substrate. The splashed liquid that lands on the substrate in this manner may cause particles to be deposited on the substrate.

[0007] When the processing liquid is discharged toward the substrate surface, the liquid splashing is less likely to occur if the amount of liquid on the substrate surface is reduced to reduce the liquid film thickness, but if the amount of liquid on the substrate is small, particles are more likely to adhere to the substrate. Therefore, by suppressing the occurrence of liquid splashing in a situation where the processing liquid is discharged toward a substrate surface covered with a sufficient amount of liquid, the adhesion of particles to the substrate can be more effectively suppressed.

[0008] The present disclosure provides an advantageous technique for suppressing adhesion of particles to a substrate.

[0009] One aspect of the present disclosure relates to a substrate liquid processing apparatus comprising a substrate holding unit for holding a substrate, a rotation drive unit for rotating the substrate held by the substrate holding unit, a liquid discharge unit having a liquid supply nozzle for discharging liquid toward a processing surface of the substrate, a processing liquid discharge unit having a processing liquid supply nozzle for discharging a mist of processing liquid toward the processing surface, a first drive unit for moving the processing liquid supply nozzle, and a control unit for controlling the processing liquid discharge unit, the first drive unit, and the liquid discharge unit, wherein the control unit controls the liquid discharge unit to discharge liquid from the liquid supply nozzle toward the processing surface of the rotating substrate, while controlling the processing liquid discharge unit and the first drive unit to move the landing position of the processing liquid from the processing liquid supply nozzle on the processing surface on which a liquid film containing the liquid is formed, from the outer periphery toward the center of the processing surface.

[0010] The present disclosure is advantageous in suppressing adhesion of particles to a substrate. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic diagram of an example of a processing system. [Diagram 2] FIG. 2 is a diagram illustrating an outline of an example of a processing unit according to the first embodiment. [Diagram 3] FIG. 3 is a diagram showing an example of a substrate liquid processing method according to the first embodiment. [Figure 4] FIG. 4 is a diagram showing an example of a substrate liquid processing method according to the first embodiment. [Diagram 5] FIG. 5 is a diagram showing an example of a substrate liquid processing method according to the first embodiment. [Figure 6] FIG. 6 is a diagram showing an example of a substrate liquid processing method according to the first embodiment. [Figure 7] FIG. 7 is a diagram showing an example of a substrate liquid processing method according to the first embodiment. [Figure 8] FIG. 8 is a diagram showing an example of a substrate liquid processing method according to the first embodiment. [Figure 9A] FIG. 9A is a diagram showing an example of a state in which the rinsing liquid and the cleaning liquid spread on the processing surface of the substrate. [Figure 9B] FIG. 9B is a diagram showing an example of divided regions on the processing surface of the substrate. [Figure 10] FIG. 10 is a diagram showing an example of driving the liquid supply nozzle for changing the landing position of the rinsing liquid on the processing surface. [Figure 11] FIG. 11 is a flow chart showing an example of changing the landing position of the rinse liquid on the processing surface by utilizing the monitoring result of the monitoring unit. [Figure 12] FIG. 12 is a diagram illustrating an outline of an example of a processing unit according to the second embodiment. [Figure 13] FIG. 13 is a diagram showing an example of a substrate liquid processing method according to the second embodiment. [Figure 14] FIG. 14 is a diagram showing an example of a substrate liquid processing method according to the second embodiment. [Figure 15] FIG. 15 is a diagram showing an example of a substrate liquid processing method according to the second embodiment. [Figure 16] FIG. 16 is a diagram showing an example of a substrate liquid processing method according to the second embodiment. [Figure 17] FIG. 17 is a diagram showing an example of a substrate liquid processing method according to the second embodiment. [Figure 18] FIG. 18 is a diagram showing an example of a substrate liquid processing method according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

[0013] FIG. 1 is a schematic diagram of an example of a processing system 80.

[0014] 1 has a loading / unloading station 91 and a processing station 92. The loading / unloading station 91 includes a placement section 81 equipped with a plurality of carriers C, and a transport section 82 in which a first transport mechanism 83 and an exchange section 84 are provided. Each carrier C accommodates a plurality of substrates W in a horizontal state. The processing station 92 is provided with a plurality of processing units 10 installed on both sides of a transport path 86, and a second transport mechanism 85 that reciprocates along the transport path 86.

[0015] The substrate W is taken out of the carrier C by the first transport mechanism 83 and placed on the delivery section 84, and is taken out of the delivery section 84 by the second transport mechanism 85. The substrate W is then carried into the corresponding processing unit 10 by the second transport mechanism 85, and is subjected to a predetermined liquid processing in the corresponding processing unit 10. Thereafter, the substrate W is taken out of the corresponding processing unit 10 by the second transport mechanism 85 and placed on the delivery section 84, and is then returned to the carrier C of the placement section 81 by the first transport mechanism 83.

[0016] The processing system 80 includes a control unit 93. The control unit 93 is configured, for example, by a computer, and includes an arithmetic processing unit and a storage unit. The storage unit of the control unit 93 stores programs and data for various processes performed in the processing system 80. The arithmetic processing unit of the control unit 93 appropriately reads out and executes the programs stored in the storage unit, thereby controlling various mechanisms of the processing system 80 and performing various processes.

[0017] The programs and data stored in the storage unit of the control unit 93 may be those recorded in a computer-readable storage medium and installed into the storage unit from the storage medium. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0018] In the above-described processing system 80, two or more of the processing units 10 may have the same configuration and perform the same processing, or may have different configurations and perform different processing. In each processing unit 10, various liquid processing can be performed by applying various processing liquids (e.g., chemical liquid, rinsing liquid, and cleaning liquid) to the substrate W. In each processing unit 10, multiple types of liquid processing (e.g., chemical liquid processing, rinsing processing, and cleaning processing) on ​​the substrate W may be performed in a single processing tank, or each may be performed in a separate processing tank.

[0019] The following describes an example of a cleaning process for the substrate W performed in one or more processing units 10. The substrate W is typically made of a semiconductor wafer, a glass substrate, or the like, but is not limited thereto.

[0020] [First embodiment] Fig. 2 is a schematic diagram of an example of the processing unit 10 according to the first embodiment. In Fig. 2, various elements inside the processing tank 21 are shown as viewed from above.

[0021] The processing unit 10 shown in FIG. 2 includes a substrate holding part 22, a liquid discharge part 32, a cleaning liquid discharge part (processing liquid discharge part) 30, a first drive part 24, and a second drive part 25.

[0022] The substrate holding part 22 holds the substrate W in the inner space of the processing bath 21. The substrate holding part 22 shown in Fig. 2 suction-holds the lower surface (particularly the center part) of the substrate W. However, the specific manner in which the substrate W is held by the substrate holding part 22 is not limited.

[0023] The substrate holding part 22 is provided so as to be rotatable about the rotation axis Ax together with the substrate W while holding the substrate W. The substrate holding part 22 is rotated by a rotation drive part 23 (see FIG. 3) constituted by a motor or the like. That is, the rotation drive part 23 rotates the substrate W held by the substrate holding part 22 about the rotation axis Ax under the control of the control part 93 (see FIG. 1).

[0024] The liquid ejection section 32 includes a liquid supply source 38 a , a flow rate controller 38 b , an on-off valve 38 c , a supply line 38 d , and a liquid supply nozzle 33 .

[0025] The liquid supply source 38a sends out a rinsing liquid Lr (e.g., DIW (Deionized water)) to the supply line 38d under the control of the control unit 93. The flow rate controller 38b is provided in a portion of the supply line 38d between the liquid supply source 38a and the on-off valve 38c, and adjusts the flow rate of the rinsing liquid Lr flowing through the supply line 38d under the control of the control unit 93. The on-off valve 38c is provided in a portion of the supply line 38d between the flow rate controller 38b and the liquid supply nozzle 33, and opens and closes the flow path of the supply line 38d under the control of the control unit 93.

[0026] The liquid supply nozzle 33 discharges the rinsing liquid Lr supplied from a liquid supply source 38a via a supply line 38d.

[0027] The cleaning liquid discharge unit 30 includes a processing liquid supply source 36 a, a flow rate controller 36 b, an on-off valve 36 c, a supply line 36 d, a gas supply source 37 a, a flow rate controller 37 b, an on-off valve 37 c, a supply line 37 d, and a cleaning liquid supply nozzle 31 .

[0028] The processing liquid supply source 36a sends out a cleaning liquid (processing liquid; for example, DIW) Lp to the supply line 36d under the control of the control unit 93. The flow rate controller 36b is provided in a portion of the supply line 36d between the processing liquid supply source 36a and the on-off valve 36c, and adjusts the flow rate of the cleaning liquid Lp flowing through the supply line 36d under the control of the control unit 93. The on-off valve 36c is provided in a portion of the supply line 36d between the flow rate controller 36b and the cleaning liquid supply nozzle 31, and opens and closes the flow path of the supply line 36d under the control of the control unit 93.

[0029] The gas supply source 37a sends out a gas (for example, an inert gas such as nitrogen) to the supply line 37d under the control of the control unit 93. The flow rate controller 37b is provided in a portion of the supply line 37d between the gas supply source 37a and the on-off valve 37c, and adjusts the flow rate of the gas flowing through the supply line 37d under the control of the control unit 93. The on-off valve 37c is provided in a portion of the supply line 37d between the flow rate controller 37b and the cleaning liquid supply nozzle 31, and opens and closes the flow path of the supply line 37d under the control of the control unit 93.

[0030] The cleaning liquid supply nozzle 31 discharges the cleaning liquid Lp supplied from the processing liquid supply source 36a via a supply line 36d and the gas supplied from the gas supply source 37a via a supply line 37d. As described above, the cleaning liquid supply nozzle 31 of this embodiment is configured as a two-fluid nozzle that sprays the cleaning liquid (processing liquid) Lp and a gas (such as an inert gas), and discharges the cleaning liquid Lp in a mist form.

[0031] The cleaning liquid supply nozzle 31 is supported by a first drive unit 24 so as to be movably moved. The liquid supply nozzle 33 is supported by a second drive unit 25 so as to be movably moved.

[0032] The first driving unit 24 has a first driving body portion 24a and a first driving arm 24b. The second driving unit 25 has a second driving body portion 25a and a second driving arm 25b.

[0033] The first drive body 24a and the second drive body 25a move along a guide rail 26 that extends linearly in the horizontal direction (i.e., the X-axis direction) under the control of the control unit 93. The guide rail 26 is fixedly provided with respect to the treatment tank 21 on the inside of the treatment tank 21. The first drive arm 24b and the second drive arm 25b are each provided so as to be linearly extendable and contractible in each of the horizontal direction (i.e., the Y-axis direction perpendicular to the X-axis direction) and the height direction (i.e., the Z-axis direction) under the control of the control unit 93.

[0034] Therefore, the first driving unit 24 can move the cleaning liquid supply nozzle 31 in the X-axis direction, the Y-axis direction, and the Z-axis direction under the control of the control unit 93. Also, the second driving unit 25 can move the liquid supply nozzle 33 in the X-axis direction, the Y-axis direction, and the Z-axis direction under the control of the control unit 93.

[0035] The control unit 93 performs the cleaning process for the substrate W by controlling the rotation drive unit 23, the cleaning liquid discharge unit 30, the liquid discharge unit 32, the first drive unit 24, and the second drive unit 25 as described above.

[0036] The processing unit 10 shown in FIG. 2 further includes a cup structure 29 and a monitoring unit 35 provided inside the processing tank 21.

[0037] The cup structure 29 is provided to surround the substrate W held by the substrate holding part 22 in the horizontal direction. The cup structure 29 typically includes one or more cup bodies having a circular annular planar shape. Each cup body has a cylindrical shape with an upper part and a lower part open, and the substrate holding part 22 and / or the substrate W held by the substrate holding part 22 are disposed inside each cup body. The cup structure 29 receives liquid (including the rinsing liquid Lr and the cleaning liquid Lp) splashed from the substrate W and prevents the splashed liquid from leaking out of the processing bath 21.

[0038] Under the control of the control unit 93, the monitoring unit 35 monitors the state of the liquid film formed on the processing surface (i.e., the upper surface) of the substrate W held by the substrate holding unit 22. The specific state of the liquid film monitored by the monitoring unit 35 is not limited. The monitoring unit 35 may monitor, for example, the thickness of the liquid film on the processing surface of the substrate W. The monitoring result of the monitoring unit 35 is sent to the control unit 93.

[0039] The specific configuration of the monitoring unit 35 is not limited, and typically the monitoring unit 35 may include one or more measuring instruments using a camera (image pickup element) or a laser. The monitoring unit 35 may also be configured by a combination of a measuring instrument and an arithmetic processing unit (e.g., the control unit 93) that are provided separately. For example, measurement data may be sent from the measuring instrument of the monitoring unit 35 to the control unit 93 that functions as the arithmetic processing unit, and the control unit 93 may analyze the measurement data to obtain the state of the liquid film formed on the processing surface of the substrate W.

[0040] The processing unit 10 may also comprise other devices.

[0041] For example, the processing unit 10 may include a lower surface cleaning unit (not shown) for cleaning the lower surface of the substrate W held by the substrate holding part 22. The lower surface cleaning unit includes, for example, a cleaning body constituted by a brush, a sponge, or the like that is pressed against the lower surface of the substrate W, a cleaning liquid discharge nozzle that discharges a cleaning liquid, and a lower surface cleaning moving device that moves the cleaning body and the cleaning liquid discharge nozzle. Under the control of the control part 93, the lower surface cleaning moving device moves the cleaning body and the cleaning liquid discharge nozzle to apply cleaning liquid to the lower surface of the substrate W while pressing the cleaning body against it, thereby cleaning the lower surface of the substrate W.

[0042] Also, one or more suction pads (not shown) may be provided that can hold a portion of the underside of the substrate W other than the central portion. While the substrate W is held by the suction pads, the portion of the underside of the substrate W that comes into contact with the substrate holding part 22 (i.e., the central portion) can be cleaned. Meanwhile, while the substrate W is held by the substrate holding part 22, the portion of the underside of the substrate W that comes into contact with the suction pads can be cleaned.

[0043] Furthermore, a plurality of (e.g., three) lift pins (not shown) may be provided around the substrate holding part 22. These lift pins are provided so as to be movable up and down by a lift mechanism (not shown). This allows the transfer of the substrate W between these lift pins and a transport mechanism (second transport mechanism 85 (see FIG. 1)) provided outside the processing unit 10. Furthermore, the transfer of the substrate W between these lift pins and the substrate holding part 22 or the above-mentioned suction pads can be performed.

[0044] Further, a processing liquid discharge unit (not shown) that discharges another processing liquid (for example, a chemical liquid) under the control of the control unit 93 and applies it to the substrate W may be provided.

[0045] Next, an example of a substrate liquid processing method performed in the processing unit 10 shown in FIG. 2 will be described.

[0046] In a cleaning process using the mist-like cleaning liquid Lp, the rinsing liquid Lr is supplied to the center of the substrate W or near the center so that the entire processing surface (upper surface) of the substrate W is covered with the rinsing liquid Lr (liquid).

[0047] On the other hand, since the cleaning process needs to be performed on the entire processing surface of the substrate W, the mist-like cleaning liquid Lp is also applied to the entire processing surface of the substrate W. Specifically, while rotating the substrate W, the spraying position of the cleaning liquid Lp on the processing surface is moved in the radial direction of the processing surface, so that the cleaning liquid Lp is directly sprayed onto the entire processing surface.

[0048] Therefore, when the cleaning liquid Lp is supplied to the center or near the center of the substrate W, splashing is likely to occur due to collision between the cleaning liquid Lp and the rinsing liquid Lr supplied to the center or near the center of the substrate W. Such splashing can cause particles to be deposited on the substrate W, and is therefore preferably avoided as much as possible.

[0049] In order to suppress the above-mentioned liquid splashes caused by the collision of the cleaning liquid Lp and the rinsing liquid Lr, the following measures are effective.

[0050] For example, by reducing the amount of rinsing liquid Lr applied to the processing surface of the substrate W and thinning the film of the rinsing liquid Lr on the processing surface, it is possible to suppress liquid splashing when the cleaning liquid Lp is applied onto the substrate W. However, in this case, the amount of rinsing liquid Lr on the processing surface of the substrate W may be insufficient to prevent particles caused by the liquid splashing off a cup or the like, and as a result, defects may be more likely to occur on the processing surface of the substrate W.

[0051] Moreover, by increasing the rotation speed of the substrate W and thinning the film of the rinsing liquid Lr on the processing surface of the substrate W, it is possible to suppress liquid splashing when the cleaning liquid Lp is applied to the substrate W. However, even in this case, the amount of the rinsing liquid Lr on the processing surface of the substrate W may be insufficient, making the processing surface of the substrate W more susceptible to defects. In this case, the mist liquid is stirred up by the substrate W rotating at high speed, making the liquid more susceptible to scattering from the substrate W. As a result, the scattered liquid that has bounced off a cup or the like may adhere to the processing surface of the substrate W, making it more likely for particles to adhere to the processing surface. In this case, the film thickness of the rinsing liquid Lr tends to be locally large at locations other than the center or near the center of the processing surface of the substrate W, making it more likely for the cleaning liquid Lp and the rinsing liquid Lr to collide at these locations and cause liquid splashing.

[0052] Furthermore, the closer the ejection direction of the rinsing liquid Lr onto the processing surface of the substrate W is to a direction perpendicular to the processing surface, the less likely liquid splashing tends to occur. That is, the more the ejection direction of the rinsing liquid Lr onto the processing surface of the substrate W deviates from a direction perpendicular to the processing surface (i.e., the greater the inclination with respect to the perpendicular direction), the more likely liquid splashing will occur.

[0053] Furthermore, when the cleaning liquid Lp is discharged toward the substrate W together with gas, as in two-fluid cleaning, the occurrence of liquid splashing can be suppressed by reducing the flow rate of the gas. However, in this case, the performance of removing particles from the processing surface of the substrate W decreases.

[0054] An example of a substrate liquid processing method that is advantageous for applying a cleaning liquid (processing liquid) Lp to the substrate W while suppressing adhesion of particles to the substrate W will be described below.

[0055] The substrate liquid processing method described below is performed by the control unit 93 appropriately controlling each part of the processing system 80 (processing unit 10).

[0056] 3 to 8 are diagrams illustrating an example of the substrate liquid processing method according to the first embodiment.

[0057] First, as shown in FIG. 3, the liquid supply nozzle 33 discharges the rinsing liquid Lr toward the processing surface Ws of the substrate W held by the substrate holder 22 (pre-rinsing process).

[0058] In this pre-rinse process, the liquid supply nozzle 33 discharges the rinsing liquid Lr toward the center of the processing surface Ws (i.e., the position through which the rotation axis Ax passes) and an area including the vicinity of the center (i.e., the first liquid supply area Ws1). As a result, the rinsing liquid Lr spreads over the entire processing surface Ws of the rotating substrate W, and the entire processing surface Ws is covered with a liquid film of the rinsing liquid Lr.

[0059] The main discharge direction of the rinsing liquid Lr from the liquid supply nozzle 33 is the vertical direction (downward direction along the Z axis). However, the discharge direction of all of the rinsing liquid Lr discharged from the liquid supply nozzle 33 does not need to be strictly vertical. At least a part of the rinsing liquid Lr discharged from the liquid supply nozzle 33 may fly in a direction inclined with respect to the vertical direction.

[0060] The first liquid supply area Ws1 where the rinsing liquid Lr from the liquid supply nozzle 33 lands does not necessarily have to include the center of the processing surface Ws. For example, if a portion of the rinsing liquid Lr discharged from the liquid supply nozzle 33 spreads to a range including the center of the processing surface Ws after landing on the processing surface Ws, it is possible to cover the entire processing surface Ws with the rinsing liquid Lr even if the first liquid supply area Ws1 does not include the center of the processing surface Ws.

[0061] While the rinsing liquid Lr and the cleaning liquid Lp are being applied to the processing surface Ws from the cleaning liquid supply nozzle 31 and the liquid supply nozzle 33 (see Figures 3 to 8), the substrate W is continuously rotated together with the substrate holding part 22 about the rotation axis Ax by the rotation drive part 23.

[0062] The liquid supply nozzle 33 supplies the rinsing liquid Lr to the processing surface Ws of the substrate W held and rotated by the substrate holder 22, while the cleaning liquid supply nozzle 31 ejects the cleaning liquid Lp toward the processing surface Ws (see FIG. 4). This allows the processing surface Ws of the substrate W to be cleaned with the cleaning liquid Lp while maintaining a liquid film on the processing surface Ws (atomization cleaning process). The cleaning liquid Lp is mainly ejected from the cleaning liquid supply nozzle 31 in the vertical direction. However, the ejection direction of all the cleaning liquid Lp ejected from the cleaning liquid supply nozzle 31 does not need to be strictly vertical. At least a part of the cleaning liquid Lp ejected from the cleaning liquid supply nozzle 31 may fly in a direction inclined with respect to the vertical direction.

[0063] Specifically, first, as shown in FIG. 4, rinsing liquid Lr is ejected from the liquid supply nozzle 33 toward the first liquid supply area Ws1, while the cleaning liquid supply nozzle 31 begins ejecting cleaning liquid Lp toward the outer periphery (particularly the edge) of the processing surface Ws.

[0064] At this time, the rotary drive unit 23 rotates the substrate W at a rotation speed such that the thickness of the liquid film on the outer periphery of the processing surface Ws becomes sufficiently small. As a result, the above-mentioned atomized cleaning process starts from a portion of the processing surface Ws where the liquid film is sufficiently thin, and the occurrence of liquid splashing at the beginning of the atomized cleaning process can be suppressed.

[0065] The cleaning liquid supply nozzle 31 in this example starts discharging the cleaning liquid Lp toward the outer periphery of the processing surface Ws, and then starts discharging the gas. That is, under the control of the control unit 93, the flow path of the supply line 36d (see FIG. 2) is switched from the closed state to the open state by the on-off valve 36c, and then the flow path of the supply line 37d is switched from the closed state to the open state by the on-off valve 37c.

[0066] Generally, when gas is ejected from a two-fluid nozzle toward the processing surface Ws before liquid, the liquid film on the processing surface Ws disappears, and particles such as watermarks tend to occur on the processing surface Ws. Therefore, by starting the ejection of gas after starting the ejection of the cleaning liquid Lp as in this example, it is possible to avoid ejecting the gas from the cleaning liquid supply nozzle 31 before the cleaning liquid Lp, and suppress the generation of particles such as watermarks on the processing surface Ws.

[0067] In this example, while the cleaning liquid Lp is being discharged from the cleaning liquid supply nozzle 31 toward the outer periphery of the processing surface Ws, gas is started to be discharged from the cleaning liquid supply nozzle 31. As a result, the outer periphery of the processing surface Ws is cleaned by the mist-like cleaning liquid Lp discharged from the cleaning liquid supply nozzle 31 together with the gas.

[0068] While the rinsing liquid Lr is continuously supplied from the liquid supply nozzle 33 to the processing surface Ws, the cleaning liquid supply nozzle 31 moves horizontally (in the X-axis direction) from the outer periphery to the center of the substrate W while spraying the cleaning liquid Lp and gas.

[0069] That is, the control unit 93 controls the liquid discharge unit 32 and the second drive unit 25 to discharge the rinsing liquid Lr from the liquid supply nozzle 33 toward the processing surface Ws (particularly the first liquid supply area Ws1) of the rotating substrate W. The control unit 93 also controls the cleaning liquid discharge unit 30 and the first drive unit 24 to move the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws where the liquid film (including the rinsing liquid Lr) is formed, from the outer periphery toward the center of the processing surface Ws. As a result, the rinsing liquid Lr is discharged from the liquid supply nozzle 33 toward the processing surface Ws of the rotating substrate W, while the cleaning liquid Lp in the form of a mist is discharged from the cleaning liquid supply nozzle 31 toward the processing surface Ws (processing liquid scanning process).

[0070] The central portion referred to here may include not only the center of the processing surface Ws (the point through which the rotation axis Ax passes) but also the vicinity of the center. Therefore, the landing position of the cleaning liquid Lp on the processing surface Ws may move toward the center of the processing surface Ws or toward the vicinity of the center of the processing surface Ws.

[0071] Furthermore, when the cleaning liquid supply nozzle 31 moves from the outer periphery side toward the center side of the substrate W, the cleaning liquid supply nozzle 31 does not necessarily have to move strictly toward the center of the processing surface Ws (i.e., the rotation axis Ax). That is, the cleaning liquid supply nozzle 31 may move along the radial direction of the processing surface Ws having a circular planar shape, or may not move along the radial direction. However, it is preferable that the cleaning liquid supply nozzle 31 moves from the outer periphery side toward the center side of the substrate W along a path that allows the cleaning liquid Lp to be directly sprayed onto the entire processing surface Ws of the rotating substrate W.

[0072] Under the control of the control unit 93, the liquid supply nozzle 33 ejects the rinsing liquid Lr toward the center of the processing surface Ws while the landing position of the cleaning liquid Lp is moving from the outer periphery of the processing surface Ws toward a first intermediate portion located between the outer periphery and the center of the processing surface Ws (see FIG. 4). That is, the control unit 93 controls the second drive unit 25 to eject the rinsing liquid Lr from the liquid supply nozzle 33 toward the first liquid supply area Ws1 of the processing surface Ws while the landing position of the cleaning liquid Lp is moving from the outer periphery of the processing surface Ws toward the first intermediate portion.

[0073] On the other hand, under the control of the control unit 93, the liquid supply nozzle 33 discharges the rinsing liquid Lr toward an area other than the center of the processing surface Ws while the landing position of the cleaning liquid Lp on the processing surface Ws moves from the first intermediate portion toward the center of the processing surface Ws (see FIG. 5). That is, the control unit 93 controls the second drive unit 25 to discharge the rinsing liquid Lr from the liquid supply nozzle 33 toward the second liquid supply area Ws2 of the processing surface Ws while the landing position of the cleaning liquid Lp moves from the first intermediate portion toward the center of the processing surface Ws. Here, the distance of the second liquid supply area Ws2 from the center of the processing surface Ws (i.e., the rotation axis Ax) is greater than the distance of the first liquid supply area Ws1 from the center of the processing surface Ws.

[0074] In this embodiment, the second drive unit 25 moves the liquid supply nozzle 33 in the horizontal direction to change the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 on the processing surface Ws. That is, the second drive unit 25 moves the liquid supply nozzle 33 to switch between a state in which the rinsing liquid Lr from the liquid supply nozzle 33 is discharged toward the first liquid supply area Ws1 and a state in which the rinsing liquid Lr is discharged toward the second liquid supply area Ws2. The landing areas Ws1 and Ws2 of the rinsing liquid Lr are determined so that the entire processing surface Ws is continuously covered with a liquid film by the cleaning liquid Lp discharged from the cleaning liquid supply nozzle 31 and the rinsing liquid Lr discharged from the liquid supply nozzle 33.

[0075] In this example, the moving speed of the cleaning liquid supply nozzle 31 toward the center of the processing surface Ws is reduced during all or part of the time when the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 is switched in this manner. This makes it possible to suppress liquid splashing in a state in which the landing position of the rinsing liquid Lr on the processing surface Ws is unstable due to the switching of the landing position of the rinsing liquid Lr. Note that the cleaning liquid supply nozzle 31, whose moving speed has been temporarily reduced in this manner, moves toward the center of the processing surface Ws again at the original moving speed (i.e., a relatively fast moving speed).

[0076] Furthermore, in this example, the amount of the rinsing liquid Lr per unit time discharged from the liquid supply nozzle 33 toward the second liquid supply area Ws2 is smaller than the amount of the rinsing liquid Lr per unit time discharged from the liquid supply nozzle 33 toward the first liquid supply area Ws1. This reduces the amount of the rinsing liquid Lr near the landing position of the cleaning liquid Lp on the processing surface Ws, making it possible to suppress splashing of the rinsing liquid Lr and / or the cleaning liquid Lp.

[0077] In this example, the rotation speed of the substrate W is higher while the landing position of the cleaning liquid Lp moves from the second intermediate portion of the processing surface Ws toward the center than while the landing position of the cleaning liquid Lp moves from the outer periphery toward the second intermediate portion located between the outer periphery and the center of the processing surface Ws. The distance of the second intermediate portion from the center (rotation axis Ax) of the processing surface Ws may be the same as or different from the distance of the first intermediate portion from the center of the processing surface Ws.

[0078] In general, the lower the rotation speed of the substrate W, the thicker portion of the liquid film on the processing surface Ws tends to be closer to the center of the processing surface Ws (e.g., the landing position of the rinsing liquid Lr and / or the cleaning liquid Lp). By reducing the rotation speed of the substrate W, the rinsing liquid Lr on the processing surface Ws may spread over the processing surface Ws so as to bypass the landing position of the cleaning liquid Lp on the processing surface Ws (see FIG. 9A described later). Therefore, by relatively reducing the rotation speed of the substrate W while the landing position of the cleaning liquid Lp is moving from the second intermediate portion of the processing surface Ws toward the center as described above, liquid splashing can be suppressed.

[0079] 6, when the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws reaches the center of the processing surface Ws, the cleaning liquid supply nozzle 31 turns back and moves in the X-axis direction from the center to the outer periphery of the processing surface Ws. Note that the cleaning liquid supply nozzle 31 may turn back without moving directly above the center of the processing surface Ws.

[0080] Then, as shown in Figure 7, when the landing position on the processing surface Ws of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 reaches a third intermediate portion between the center and the outer periphery of the processing surface Ws, the landing position on the processing surface Ws of the rinsing liquid Lr from the liquid supply nozzle 33 is changed.

[0081] That is, when the landing position of the cleaning liquid Lp reaches the third intermediate portion, the liquid supply nozzle 33 is moved by the second drive unit 25, and the landing position of the rinsing liquid Lr is switched from the second liquid supply area Ws2 to the first liquid supply area Ws1. The distance from the center of the processing surface Ws of the third intermediate portion referred to here may be the same as or different from the distance from the center of the processing surface Ws of the above-mentioned first intermediate portion and / or second intermediate portion.

[0082] During all or part of the time when the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 is switched from the second liquid supply area Ws2 to the first liquid supply area Ws1, the moving speed of the cleaning liquid supply nozzle 31 toward the outer periphery of the processing surface Ws may be reduced. This can suppress splashing of the rinsing liquid Lr and / or the cleaning liquid Lp. The cleaning liquid supply nozzle 31, whose moving speed has been temporarily reduced in this manner, moves toward the outer periphery of the processing surface Ws again at the original moving speed (i.e., a relatively fast moving speed).

[0083] The rotation speed of the substrate W may be lower while the landing position of the cleaning liquid Lp is moving from the fourth intermediate portion to the outer periphery of the processing surface Ws than while the landing position of the cleaning liquid Lp is moving from the center toward the fourth intermediate portion located between the outer periphery and the center of the processing surface Ws. The distance from the center of the processing surface Ws to the fourth intermediate portion referred to here may be the same as or different from the distance from the center of the processing surface Ws to the first intermediate portion, the second intermediate portion, and / or the third intermediate portion described above.

[0084] Thereafter, the cleaning liquid supply nozzle 31 moves toward the outer periphery of the processing surface Ws until the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws reaches the outer periphery (particularly the edge) of the processing surface Ws (see FIG. 8). At this time, the liquid supply nozzle 33 continues to discharge the rinsing liquid Lr toward the first liquid supply area Ws1.

[0085] Thereafter, the discharge of the cleaning liquid Lp and gas from the cleaning liquid supply nozzle 31 is stopped, while the discharge of the rinsing liquid Lr from the liquid supply nozzle 33 toward the processing surface Ws (particularly the first liquid supply area Ws1) continues for a while (post-rinse process). Then, the discharge of the rinsing liquid Lr from the liquid supply nozzle 33 is stopped.

[0086] By going through the series of processes described above (see FIGS. 3 to 8), the processing surface Ws of the substrate W can be cleaned while suppressing liquid splashing, and as a result, generation of particles on the processing surface Ws can be effectively suppressed.

[0087] Fig. 9A is a diagram showing an example of the spreading state of the rinsing liquid Lr and the cleaning liquid Lp on the processing surface Ws of the substrate W. Fig. 9B is a diagram showing an example of divided regions R1 to R4 of the processing surface Ws of the substrate W.

[0088] As described above, by changing the landing position on the processing surface Ws of the rinsing liquid Lr from the liquid supply nozzle 33 in accordance with the landing position on the processing surface Ws of the cleaning liquid Lp from the cleaning liquid supply nozzle 31, liquid splashing can be suppressed.

[0089] As a result of extensive research, the present inventors have come to a new understanding regarding the "landing position of the rinsing liquid Lr on the processing surface Ws" that is advantageous for efficiently cleaning the processing surface Ws while suppressing liquid splashing.

[0090] That is, the processing surface Ws of the substrate W is divided into four regions R1 to R4 by linear X-axis and Y-axis that pass through the rotation center (rotation axis Ax) of the processing surface Ws and are perpendicular to each other. Here, the landing position on the processing surface Ws of the cleaning liquid Lp discharged from the cleaning liquid supply nozzle 31 is moved in the direction of extension of the X-axis, from the outer periphery of the processing surface Ws toward the center.

[0091] In one of the two regions of the processing surface Ws divided by the Y axis (see the third and fourth division regions R3 and R4 in FIG. 9B), there is a landing position of the cleaning liquid Lp while the landing position of the cleaning liquid Lp is moved from the outer periphery to the center of the processing surface Ws. In this case, if the second liquid supply area Ws2 exists in the other of the two regions of the processing surface Ws divided by the Y axis (see the first and second division regions R1 and R2 in FIG. 9B), it is advantageous to efficiently clean the processing surface Ws while suppressing liquid splashing.

[0092] Furthermore, by rotating the substrate W in the rotation direction Dr by the rotation drive unit 23 (see FIG. 3, etc.), the area of ​​the processing surface Ws other than the center passes through the positive side of the X axis, the negative side of the Y axis, the negative side of the X axis, and the positive side of the Y axis in sequence and repeatedly as shown in FIG. 9B. In this case, it is preferable that the second liquid supply area Ws2 is present in the area located on the negative side of the Y axis (see the second and third partitioned areas R2 and R3 shown in FIG. 9B) of the two areas of the processing surface Ws divided by the X axis. In this case, it is advantageous to efficiently clean the processing surface Ws while suppressing liquid splashing.

[0093] Taking the above findings into consideration comprehensively, when the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 is in the third partition region R3 and / or the fourth partition region R4 shown in FIG. 9B, it is preferable that the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 is in the second partition region R2.

[0094] As described above, according to this embodiment, by changing the landing position of the rinsing liquid Lr on the processing surface Ws in accordance with the landing position of the cleaning liquid Lp on the processing surface Ws, it is possible to suppress liquid splashing and thereby inhibit the generation of particles.

[0095] Furthermore, by changing the moving speed of the landing position of the cleaning liquid Lp on the processing surface Ws in response to changing the landing position of the rinsing liquid Lr on the processing surface Ws, it is possible to suppress liquid splashing and thereby inhibit the generation of particles.

[0096] Furthermore, by changing the rotation speed of the substrate W depending on the landing position of the cleaning liquid Lp on the processing surface Ws, a liquid film can be formed over the entire processing surface Ws, while suppressing liquid splashing and thus inhibiting the generation of particles.

[0097] FIG. 10 is a diagram showing an example of driving the liquid supply nozzle 33 to change the landing position of the rinsing liquid Lr on the processing surface Ws.

[0098] In the above example, the horizontal position of the liquid supply nozzle 33 is changed by the second drive unit 25 in order to change the landing position of the rinsing liquid Lr on the processing surface Ws, but the present invention is not limited to this.

[0099] 10, the second drive unit 25 (see "orientation adjustment unit 25c" in FIG. 2) may adjust the attitude (particularly the orientation of the ejection port) of the liquid supply nozzle 33 to change the ejection direction of the rinsing liquid Lr from the liquid supply nozzle 33. In other words, by the second drive unit 25 changing the ejection direction of the rinsing liquid Lr from the liquid supply nozzle 33, it is possible to switch between a state in which the rinsing liquid Lr is ejected from the liquid supply nozzle 33 toward the first liquid supply area Ws1 and a state in which the rinsing liquid Lr is ejected toward the second liquid supply area Ws2.

[0100] FIG. 11 is a flow chart showing an example of changing the landing position of the rinsing liquid Lr on the processing surface Ws by utilizing the monitoring result of the monitoring unit 35.

[0101] The control unit 93 may change the landing position of the rinsing liquid Lr on the processing surface Ws in accordance with the monitoring result of the monitoring unit 35 that monitors the state of the liquid film on the processing surface Ws.

[0102] For example, after the monitoring unit 35 starts monitoring the state of the liquid film on the processing surface Ws (S1 in FIG. 11), the liquid supply nozzle 33 starts discharging the rinsing liquid Lr toward the first liquid supply area Ws1 (S2). Also, the cleaning liquid supply nozzle 31 starts discharging the cleaning liquid Lp toward the processing surface Ws.

[0103] Then, the control unit 93 judges whether or not the liquid film on the processing surface Ws is in a state that is likely to induce liquid splashing (i.e., a "liquid splash-inducing state") based on the monitoring result sent from the monitoring unit 35 (S3). For example, when a thick portion of the liquid film on the processing surface Ws is close to the landing position of the cleaning liquid Lp on the processing surface Ws, it can be judged that the liquid film on the processing surface Ws is in a liquid splash-inducing state.

[0104] While it is determined that the liquid film on the processing surface Ws is not in a state inducing liquid splashing (N in S3), monitoring by the monitoring unit 35 continues and the rinsing liquid Lr continues to be discharged from the liquid supply nozzle 33 toward the first liquid supply area Ws1.

[0105] On the other hand, if it is determined that the liquid film on the processing surface Ws is in a liquid splash-inducing state (Y in S3), the control unit 93 controls the second drive unit 25 to change the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 from the first liquid supply area Ws1 to the second liquid supply area Ws2 (S4).

[0106] Thereafter, the control unit 93 determines whether or not the liquid film on the processing surface Ws has escaped from the liquid splash-inducing state based on the monitoring result of the monitoring unit 35 (S5).

[0107] While it is determined that the liquid film on the processing surface Ws has not escaped from the liquid splash-inducing state (N in S5), monitoring by the monitoring unit 35 continues and the rinsing liquid Lr continues to be ejected from the liquid supply nozzle 33 toward the second liquid supply area Ws2.

[0108] On the other hand, if it is determined that the liquid film on the processing surface Ws has escaped from the liquid splash-inducing state (Y in S5), the control unit 93 controls the second drive unit 25 to change the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 from the second liquid supply area Ws2 to the first liquid supply area Ws1 (S6).

[0109] Thereafter, under the control of the control unit 93, the above-mentioned processes S3 to S6 are repeated while the cleaning process of the substrate W to be processed is not completed (N of S7).

[0110] On the other hand, when the cleaning process of the target substrate W is completed (Y in S7), the control unit 93 controls the cleaning liquid discharge unit 30 and the liquid discharge unit 32 to stop the discharge of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 and the discharge of the rinsing liquid Lr from the liquid supply nozzle 33 (S8).

[0111] As described above, the control unit 93 can change the landing position of the rinsing liquid Lr on the processing surface Ws by controlling the second drive unit 25 to move the liquid supply nozzle 33 in accordance with the monitoring result of the monitoring unit 35. This makes it possible to switch between a state in which the rinsing liquid Lr is discharged from the liquid supply nozzle 33 toward the first liquid supply area Ws1 and a state in which the rinsing liquid Lr is discharged from the liquid supply nozzle 33 toward the second liquid supply area Ws2 in accordance with the monitoring result of the monitoring unit 35.

[0112] Although the above-mentioned monitoring unit 35 monitors the state of the liquid film on the processing surface Ws, the monitoring unit 35 may monitor other states. For example, the monitoring unit 35 may monitor the positions of the cleaning liquid supply nozzle 31 and the liquid supply nozzle 33, the state of the cleaning liquid Lp discharged from the cleaning liquid supply nozzle 31, and / or the state of the rinsing liquid Lr discharged from the liquid supply nozzle 33.

[0113] The control unit 93 may perform various controls based on the positions of the cleaning liquid supply nozzle 31 and the liquid supply nozzle 33 and the states of the cleaning liquid Lp and the rinsing liquid Lr monitored by the monitoring unit .

[0114] For example, the control unit 93 may control the rotation drive unit 23 to adjust the rotation speed of the substrate W based on the relative position between the thick part of the liquid film on the processing surface Ws monitored by the monitoring unit 35 and the liquid supply nozzle 33. By adjusting the rotation speed of the substrate W in this manner, it is possible to optimize the overall thickness of the liquid film on the processing surface Ws or the relative position between the thick part of the liquid film and the liquid supply nozzle 33, thereby suppressing liquid splashing and inhibiting the generation of particles.

[0115] [Second embodiment] In this embodiment, elements that are the same as or correspond to those in the above-described first embodiment are given the same reference numerals, and detailed description thereof will be omitted.

[0116] Fig. 12 is a schematic diagram of an example of a processing unit 10 according to the second embodiment. In Fig. 2, various elements inside the processing tank 21 are shown as viewed from above.

[0117] In the above-described first embodiment, the control unit 93 controls the second drive unit 25 to switch between a state in which the rinsing liquid Lr from the liquid supply nozzle 33 is discharged toward the first liquid supply area Ws1 and a state in which the rinsing liquid Lr is discharged toward the second liquid supply area Ws2. On the other hand, in the present embodiment, the control unit 93 switches the nozzle that discharges the rinsing liquid Lr, thereby switching between a state in which the rinsing liquid Lr from the liquid supply nozzle 33 is discharged toward the first liquid supply area Ws1 and a state in which the rinsing liquid Lr is discharged toward the second liquid supply area Ws2.

[0118] The liquid supply nozzle 33 of the present embodiment includes a first liquid supply nozzle 33a, a second liquid supply nozzle 33b, and a flow path adjustment portion 33c.

[0119] The first liquid supply nozzle 33a discharges the rinsing liquid Lr toward a first liquid supply area Ws1 of the processing surface Ws of the substrate W. The second liquid supply nozzle 33b discharges the rinsing liquid Lr toward a second liquid supply area Ws2 of the processing surface Ws.

[0120] The flow path adjustment unit 33c adjusts the flow path connecting the first liquid supply nozzle 33a, the second liquid supply nozzle 33b, and the supply line 38d to one another under the control of the control unit 93. That is, the flow path adjustment unit 33c adjusts the flow path so that the rinsing liquid Lr delivered via the supply line 38d is supplied only to the first liquid supply nozzle 33a or only to the second liquid supply nozzle 33b. Note that the flow path adjustment unit 33c may adjust the flow path so that the rinsing liquid Lr delivered via the supply line 38d is supplied to both the first liquid supply nozzle 33a and the second liquid supply nozzle 33b.

[0121] In the example shown in FIG. 12, the first liquid supply nozzle 33a and the second liquid supply nozzle 33b are provided integrally, but the first liquid supply nozzle 33a and the second liquid supply nozzle 33b may be provided separately from each other.

[0122] 12, similarly to the liquid supply nozzle 33 of the first embodiment described above, the first liquid supply nozzle 33a and the second liquid supply nozzle 33b are provided so as to be movable by the second drive unit 25. However, the first liquid supply nozzle 33a and the second liquid supply nozzle 33b may be provided so as to be fixed with respect to the processing tank 21. Alternatively, the first liquid supply nozzle 33a and the second liquid supply nozzle 33b may be provided so as to be fixed in the X-axis direction but movable in the Y-axis direction and / or the Z-axis direction.

[0123] 12, the rinsing liquid Lr is supplied to the first liquid supply nozzle 33a and the second liquid supply nozzle 33b by a common liquid supply source 38a, flow rate controller 38b, on-off valve 38c, and supply line 38d. However, separate liquid supply sources 38a, flow rate controllers 38b, on-off valves 38c, and / or supply lines 38d may be assigned to the first liquid supply nozzle 33a and the second liquid supply nozzle 33b, respectively.

[0124] Other configurations of the processing unit 10 shown in FIG. 12 are similar to those of the processing unit 10 according to the above-described first embodiment.

[0125] The control unit 93 (see FIG. 1) of this embodiment causes the first liquid supply nozzle 33a to discharge the rinsing liquid Lr while the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 is moving from the outer periphery toward the first intermediate portion of the processing surface Ws of the substrate W. The control unit 93 also causes the second liquid supply nozzle 33b to discharge the rinsing liquid Lr while the landing position of the cleaning liquid Lp is moving from the first intermediate portion toward the center portion of the processing surface Ws.

[0126] 13 to 18 are diagrams showing an example of a substrate liquid processing method according to the second embodiment. The substrate liquid processing method described below is performed by a control unit 93 appropriately controlling each part of the processing system 80 (processing unit 10).

[0127] 13, the first liquid supply nozzle 33a discharges the rinsing liquid Lr (pre-rinse process) toward the processing surface Ws (particularly the first liquid supply area Ws1) of the substrate W held by the substrate holding part 22. As a result, the rinsing liquid Lr spreads over the entire processing surface Ws of the rotating substrate W, and the entire processing surface Ws is covered with a liquid film of the rinsing liquid Lr.

[0128] 14, the first liquid supply nozzle 33a supplies rinsing liquid Lr to the processing surface Ws of the substrate W held and rotated by the substrate holding part 22, while the cleaning liquid supply nozzle 31 ejects the cleaning liquid Lp toward the processing surface Ws. Specifically, first, as shown in FIG. 14, the rinsing liquid Lr is ejected from the liquid supply nozzle 33 toward the first liquid supply area Ws1, while the cleaning liquid supply nozzle 31 starts ejecting the cleaning liquid Lp toward the outer periphery (particularly the edge) of the processing surface Ws.

[0129] The cleaning liquid supply nozzle 31 then moves in the horizontal direction (X-axis direction) from the outer periphery to the center of the substrate W while ejecting the cleaning liquid Lp and gas. That is, the control unit 93 controls the liquid ejection unit 32 to eject the rinsing liquid Lr from the first liquid supply nozzle 33a toward the processing surface Ws of the rotating substrate W. The control unit 93 also controls the cleaning liquid ejection unit 30 and the first drive unit 24 to move the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws where the liquid film is formed, from the outer periphery to the center of the processing surface Ws. As a result, the rinsing liquid Lr is ejected from the first liquid supply nozzle 33a toward the processing surface Ws of the rotating substrate W, while the cleaning liquid Lp in the form of a mist is ejected from the cleaning liquid supply nozzle 31 toward the processing surface Ws (processing liquid scanning process).

[0130] The liquid supply nozzle 33 discharges the rinsing liquid Lr toward the center of the processing surface Ws (see FIG. 14) while the landing position of the cleaning liquid Lp is moving from the outer periphery of the processing surface Ws toward the first intermediate portion (see FIG. 15) under the control of the control unit 93. That is, the control unit 93 controls the flow path adjustment unit 33c to discharge the rinsing liquid Lr from the first liquid supply nozzle 33a toward the first liquid supply area Ws1 while the landing position of the cleaning liquid Lp is moving from the outer periphery of the processing surface Ws toward the first intermediate portion.

[0131] On the other hand, under the control of the control unit 93, the liquid supply nozzle 33 discharges the rinsing liquid Lr toward an area other than the center of the processing surface Ws while the landing position of the cleaning liquid Lp on the processing surface Ws moves from the first intermediate portion toward the center of the processing surface Ws (see FIG. 15). That is, the control unit 93 controls the flow path adjustment unit 33c to discharge the rinsing liquid Lr from the second liquid supply nozzle 33b toward the second liquid supply area Ws2 while the landing position of the cleaning liquid Lp moves from the first intermediate portion toward the center of the processing surface Ws.

[0132] In this manner, in this example, the landing position of the rinsing liquid Lr on the processing surface Ws can be changed by switching the discharge of the rinsing liquid Lr between the first liquid supply nozzle 33a and the second liquid supply nozzle 33b. That is, the flow path adjustment unit 33c adjusts the flow path, thereby switching from a state in which the rinsing liquid Lr is discharged toward the first liquid supply area Ws1 to a state in which the rinsing liquid Lr is discharged toward the second liquid supply area Ws2.

[0133] In this example, during all or part of the time during which the landing position of the rinsing liquid Lr is switched in this manner, the moving speed of the cleaning liquid supply nozzle 31 toward the center of the processing surface Ws is reduced. Then, the cleaning liquid supply nozzle 31, whose moving speed has been temporarily reduced in this manner, moves toward the center of the processing surface Ws again at the original moving speed (i.e., the relatively fast moving speed).

[0134] In this example, the flow rate of the rinsing liquid Lr discharged from the first liquid supply nozzle 33a is greater than the flow rate of the rinsing liquid Lr discharged from the second liquid supply nozzle 33b. Therefore, the amount of the rinsing liquid Lr discharged per unit time from the second liquid supply nozzle 33b toward the second liquid supply area Ws2 is less than the amount of the rinsing liquid Lr discharged per unit time from the first liquid supply nozzle 33a toward the first liquid supply area Ws1.

[0135] In this example, the rotation speed of the substrate W is higher while the landing position of the cleaning liquid Lp moves from the outer periphery toward the second intermediate portion located between the outer periphery and the center of the processing surface Ws than while the landing position of the cleaning liquid Lp moves from the outer periphery toward the second intermediate portion located between the outer periphery and the center of the processing surface Ws.

[0136] Then, as shown in Figure 16, when the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws reaches the center of the processing surface Ws, the cleaning liquid supply nozzle 31 turns back and moves in the X-axis direction from the center to the outer periphery of the processing surface Ws.

[0137] 17, when the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws reaches a third intermediate portion between the center and the outer periphery of the processing surface Ws, the landing position of the rinsing liquid Lr from the liquid supply nozzle 33 is changed on the processing surface Ws. That is, when the landing position of the cleaning liquid Lp reaches the third intermediate portion, the flow path adjustment unit 33c switches the nozzle that discharges the rinsing liquid Lr from the second liquid supply nozzle 33b to the first liquid supply nozzle 33a. As a result, the landing position of the rinsing liquid Lr on the processing surface Ws is switched from the second liquid supply area Ws2 to the first liquid supply area Ws1.

[0138] During all or part of the time during which the landing position of the rinsing liquid Lr is switched from the second liquid supply area Ws2 to the first liquid supply area Ws1, the moving speed of the cleaning liquid supply nozzle 31 toward the outer periphery of the processing surface Ws may be reduced. The cleaning liquid supply nozzle 31, whose moving speed has been temporarily reduced in this manner, moves toward the outer periphery of the processing surface Ws again at the original moving speed (i.e., the relatively fast moving speed).

[0139] In addition, the rotation speed of the substrate W may be lower while the landing position of the cleaning liquid Lp is moving from the central portion toward the outer periphery of the processing surface Ws than while the landing position of the cleaning liquid Lp is moving from the central portion toward the fourth intermediate portion located between the outer periphery and the central portion of the processing surface Ws.

[0140] Thereafter, the cleaning liquid supply nozzle 31 moves toward the outer periphery of the processing surface Ws until the landing position of the cleaning liquid Lp from the cleaning liquid supply nozzle 31 on the processing surface Ws reaches the outer periphery (particularly the edge) of the processing surface Ws (see FIG. 18).

[0141] Thereafter, the discharge of the cleaning liquid Lp and gas from the cleaning liquid supply nozzle 31 is stopped, while the discharge of the rinsing liquid Lr from the first liquid supply nozzle 33a toward the processing surface Ws (i.e., the first liquid supply area Ws1) continues for a while (post-rinse process). Then, the discharge of the rinsing liquid Lr from the liquid supply nozzle 33 is stopped.

[0142] By going through the series of processes described above (see FIGS. 13 to 18), the processing surface Ws of the substrate W can be cleaned while suppressing liquid splashing, and as a result, the generation of particles on the processing surface Ws can be effectively suppressed.

[0143] [Variations] In the above example, the cleaning liquid supply nozzle 31 and / or the liquid supply nozzle 33 move linearly in the horizontal direction, but the cleaning liquid supply nozzle 31 and / or the liquid supply nozzle 33 may move non-linearly. For example, the cleaning liquid supply nozzle 31 and / or the liquid supply nozzle 33 may be attached to a drive arm that swings in a horizontal plane about a drive axis extending in the height direction under the control of the control unit 93. In this case, the cleaning liquid supply nozzle 31 and / or the liquid supply nozzle 33 moves along an arc centered on the drive axis in response to the swing of the drive arm.

[0144] Furthermore, in the above example, the cleaning liquid supply nozzle 31 is configured as a two-fluid nozzle, but it may be configured as a one-fluid nozzle that ejects the cleaning liquid (processing liquid) Lp without ejecting any gas.

[0145] In the above example, the cleaning liquid Lp is used as the processing liquid, but the above-mentioned technology (apparatus and method) can be appropriately applied to cases where a processing liquid other than the cleaning liquid is used. Similarly, the above-mentioned technology (apparatus and method) can be appropriately applied to cases where another liquid is used instead of the rinsing liquid Lr (e.g., DIW).

[0146] It should be noted that the embodiments and modifications disclosed in this specification are merely illustrative in all respects and are not to be construed as limiting. The above-mentioned embodiments and modifications can be omitted, substituted, and modified in various forms without departing from the scope and spirit of the appended claims. For example, the above-mentioned embodiments and modifications may be combined, and an embodiment other than the above-mentioned may be combined with the above-mentioned embodiment or modifications.

[0147] Furthermore, the technical category in which the above-mentioned technical idea is embodied is not limited. For example, the above-mentioned substrate liquid processing apparatus may be applied to other apparatuses. Furthermore, the above-mentioned technical idea may be embodied by a computer program for causing a computer to execute one or more procedures (steps) included in the above-mentioned substrate liquid processing method (including the method for cleaning a substrate W). Furthermore, the above-mentioned technical idea may be embodied by a computer-readable non-transitory recording medium on which such a computer program is recorded.

Claims

1. A substrate holder for holding a substrate; a rotation drive unit that rotates the substrate held by the substrate holder; a liquid ejection unit having a liquid supply nozzle that ejects liquid toward the processing surface of the substrate; a processing liquid discharge unit having a processing liquid supply nozzle that discharges a mist of the processing liquid toward the processing surface; a first drive unit that moves the processing liquid supply nozzle; a control unit that controls the treatment liquid discharge unit, the first drive unit, and the liquid discharge unit, the control unit controls the liquid discharge unit to discharge the liquid from the liquid supply nozzle toward the processing surface of the rotating substrate, while controlling the processing liquid discharge unit and the first drive unit to move a landing position of the processing liquid from the processing liquid supply nozzle on the processing surface on which a liquid film containing the liquid is formed, from an outer periphery toward a center of the processing surface; The liquid supply nozzle, under the control of the control unit, ejecting the liquid toward a first liquid supply area of ​​the processing surface while the landing position of the processing liquid moves from the outer periphery of the processing surface toward a first intermediate portion located between the outer periphery and the center of the processing surface; While the landing position of the processing liquid moves from the first intermediate portion toward the center portion, the liquid is discharged toward a second liquid supply area of ​​the processing surface; a distance of the second liquid supply area from a center of the processing surface is greater than a distance of the first liquid supply area from a center of the processing surface; The processing surface is divided into four regions by linear X-axis and Y-axis that pass through a rotation center of the processing surface and are perpendicular to each other, the landing position on the processing surface of the processing liquid discharged from the processing liquid supply nozzle is moved in a direction along which the X-axis extends, from the outer periphery of the processing surface toward the center thereof; one of the two regions of the processing surface divided by the Y axis includes a landing position of the processing liquid while the landing position of the processing liquid is moved from the outer periphery toward the center of the processing surface, and the other includes the second liquid supply area; Substrate liquid processing equipment.

2. The substrate processing apparatus according to claim 1 , wherein the processing liquid supply nozzle discharges a gas together with the processing liquid.

3. 3 . The substrate processing apparatus according to claim 2 , wherein the processing liquid supply nozzle starts discharging the gas after starting discharging the processing liquid toward the outer periphery of the processing surface.

4. a second drive unit that moves the liquid supply nozzle; A substrate liquid processing apparatus according to any one of claims 1 to 3, wherein the control unit controls the second drive unit to switch between a state in which the liquid is ejected from the liquid supply nozzle toward the first liquid supply area and a state in which the liquid is ejected from the liquid supply nozzle toward the second liquid supply area.

5. The substrate liquid processing apparatus of claim 4, wherein the second drive unit moves the liquid supply nozzle to switch between a state in which the liquid is ejected from the liquid supply nozzle toward the first liquid supply area and a state in which the liquid is ejected from the liquid supply nozzle toward the second liquid supply area.

6. The substrate liquid processing apparatus of claim 4, wherein the second drive unit changes the direction of ejection of the liquid from the liquid supply nozzle to switch between a state in which the liquid is ejected from the liquid supply nozzle toward the first liquid supply area and a state in which the liquid is ejected from the liquid supply nozzle toward the second liquid supply area.

7. The liquid supply nozzle includes: a first liquid supply nozzle that ejects the liquid toward a first liquid supply area of ​​the processing surface; a second liquid supply nozzle that ejects the liquid toward a second liquid supply area of ​​the processing surface, The control unit is While the landing position of the processing liquid moves from the outer periphery to the first intermediate portion of the processing surface, the liquid is discharged from the first liquid supply nozzle; 3 . The substrate liquid processing apparatus according to claim 1 , wherein the liquid is discharged from the second liquid supply nozzle while the landing position of the processing liquid moves from the first intermediate portion toward the center portion of the processing surface.

8. 8. The substrate liquid processing apparatus according to claim 7, wherein a flow rate of the liquid discharged from the first liquid supply nozzle is greater than a flow rate of the liquid discharged from the second liquid supply nozzle.

9. By rotating the substrate by the rotation drive unit, a region of the processing surface other than the center repeatedly passes through the positive side of the X-axis, the negative side of the Y-axis, the negative side of the X-axis, and the positive side of the Y-axis, in sequence; 3 . The substrate liquid processing apparatus according to claim 1 , wherein the second liquid supply area is located in a region on the negative side of the Y axis out of two regions of the processing surface divided by the X axis.

10. a monitoring unit for monitoring a state of the liquid film formed on the processing surface, 3. The substrate liquid processing apparatus according to claim 1, wherein the control unit switches between a state in which the liquid is ejected from the liquid supply nozzle toward the first liquid supply area and a state in which the liquid is ejected from the liquid supply nozzle toward the second liquid supply area depending on the monitoring result of the monitoring unit.

11. A substrate liquid processing apparatus as described in claim 1 or 2, wherein the rotation speed of the substrate is higher while the landing position of the processing liquid moves from the second intermediate portion of the processing surface toward the center than while the landing position of the processing liquid moves from the outer periphery toward the second intermediate portion located between the outer periphery and the center of the processing surface.

12. a step of discharging a liquid from a liquid supply nozzle toward a processing surface of a rotating substrate, while discharging a mist of the processing liquid from a processing liquid supply nozzle toward the processing surface, thereby moving a landing position of the processing liquid on the processing surface, on which a liquid film containing the liquid is formed, from an outer periphery toward a center of the processing surface; The liquid supply nozzle includes: ejecting the liquid toward a first liquid supply area of ​​the processing surface while the landing position of the processing liquid moves from the outer periphery of the processing surface toward a first intermediate portion located between the outer periphery and the center of the processing surface; While the landing position of the processing liquid moves from the first intermediate portion toward the center portion, the liquid is discharged toward a second liquid supply area of ​​the processing surface; a distance of the second liquid supply area from a center of the processing surface is greater than a distance of the first liquid supply area from a center of the processing surface; The processing surface is divided into four regions by linear X-axis and Y-axis that pass through a rotation center of the processing surface and are perpendicular to each other, the landing position on the processing surface of the processing liquid discharged from the processing liquid supply nozzle is moved in a direction along which the X-axis extends, from the outer periphery of the processing surface toward the center thereof; one of the two regions of the processing surface divided by the Y axis includes a landing position of the processing liquid while the landing position of the processing liquid is moved from the outer periphery toward the center of the processing surface, and the other includes the second liquid supply area; A method for treating a substrate with liquid.

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