Power Electronics Packages

Abstract

To provide a package for power electronics, the package including two or more paralleled power semiconductor dies therein.SOLUTION: A discrete package 36 for power electronics includes a power substrate 38, some power semiconductor dies 54, and a Kelvin connection contact 46. The power semiconductor dies are on the power substrate and each power semiconductor die includes a first power switching pad 56, a second power switching pad 58, a control pad 60, a semiconductor structure, and a Kelvin connection pad 62. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the power switching path. The Kelvin connection contact is coupled to the Kelvin connection pad of the power semiconductor die via a Kelvin conductive trace on the power substrate.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] This disclosure relates to packages for power electronics, and more particularly to packages for power electronics that include two or more paralleled power semiconductor dies therein. [Background technology]

[0002] 1 shows a top view of a conventional discrete package 10 for power electronics. The conventional discrete package 10 is a leadframe package including a power substrate 12, a first power switching contact 14, a second power switching contact 16, a control contact 18, and a Kelvin connection contact 20. The first power switching contact 14, the second power switching contact 16, the control contact 18, and the Kelvin connection contact 20 form part of the leadframe array of the conventional discrete package 10. The power substrate 12 includes a power switching conductive trace 22 and a control trace 24, each of which is separated from each other by a portion of insulating material such that the power switching conductive trace 22 is electrically insulated from the control trace 24. Several power semiconductor dies 26 are provided on the power switching conductive trace 22 such that a first power switching pad 28 on the backside of each of the power semiconductor dies 26 is electrically coupled to the power switching conductive trace 22. On the top of each of the power semiconductor dies 26 opposite the backside, the power semiconductor die 26 includes a second power switching pad 30 (split into two portions) and a control pad 32 .

[0003] Each of the power semiconductor dies 26 are transistors coupled in parallel to form a single switching position. Thus, each of the power semiconductor dies 26 includes a semiconductor structure disposed between a first power switching pad 28, a second power switching pad 30, and a control pad 32, and the semiconductor structure is configured such that a resistance of a power switching path between the first power switching pad 28 and the second power switching pad 30 is based on a control signal provided at the control pad 32. The first power switching contact 14 is coupled to the first power switching conductive trace 22 such that the first power switching contact 14 is coupled to the first power switching pad 28 of each of the power semiconductor dies 26. The second power switching contact 16 is coupled to the second power switching pad 30 of each of the power semiconductor dies 26. The control contact 18 is coupled to the second power switching contact 16. The control traces 24 are then coupled to a control pad 32 of each of the power semiconductor die 26 by one or more wire bonds 34 such that the control contacts 18 are coupled to a control pad 32 of each of the power semiconductor die 26. A power switching loop is formed between the first power switching contact 14 and the second power switching contact 16. A signal loop is formed between the control contact 18 and the Kelvin connection contact 20 (i.e., across the signal loop) to control the resistance between the first power switching contact 14 and the second power switching contact 16 (i.e., across the power switching loop).

[0004]

[0004] In particular, the second power switching contact 16 and the Kelvin connection contact 20 are not separately coupled to the power semiconductor die 26. That is, the second power switching contact 16 and the Kelvin connection contact 20 are first coupled to each other and then to the second power switching pad 30 of each of the power semiconductor die 26. As a result, there is some amount of metal between the point where the second power switching contact 16 is coupled to the Kelvin connection contact 20 and the point where the combined second power switching contact 16 and Kelvin connection contact 20 are coupled to each of the power semiconductor die 26. This metal has an associated impedance that causes coupling between the power switching loop and the signal loop.

[0005]

[0005] The coupling between the power switching loop and the signal loop causes feedback between the loops, which causes serious problems such as poor switching quality, slow switching speed, increased losses, and possible destruction of the power semiconductor die 26. In light of the above, there is a need for an improved discrete power package for power electronics. Summary of the Invention

[0006] In one embodiment, a package for power electronics includes a power substrate, several power semiconductor dies, and Kelvin connection contacts. Each of the power semiconductor dies is on the power substrate and includes a first power switching pad, a second power switching pad, a control pad, a semiconductor structure, and a Kelvin connection pad. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and is configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the second power switching pad on the power semiconductor die. The Kelvin connection contacts are coupled to the Kelvin connection pads of each of the power semiconductor dies via Kelvin conductive traces on the power substrate. Connecting the Kelvin connection pads of each of the power semiconductor dies to the Kelvin connection contacts via the conductive traces on the power substrate significantly simplifies the layout of the discrete package and shortens the length of the connection between the Kelvin connection contacts and the power semiconductor dies, thereby improving the performance of the discrete package.

[0007]

[0007] Those skilled in the art will appreciate the scope of the present disclosure and realize additional aspects thereof after reading the following detailed description of the preferred embodiments in conjunction with the accompanying drawing figures.

[0008] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate several aspects of the disclosure and, together with the description, serve to explain the principles of the disclosure. [Brief description of the drawings]

[0008] [Figure 1]

[0009] FIG. 1 is a top schematic diagram of a conventional discrete package for power electronics. [Diagram 2]

[0010] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. [Diagram 3]

[0011] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. [Figure 4]

[0012] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. [Diagram 5]

[0013] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. [Figure 6]

[0014] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. [Figure 7]

[0015] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. [Figure 8]

[0016] FIG. 1 is a top schematic diagram of a discrete package for power electronics according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009]

[0017] The embodiments described below represent the necessary information to enable those skilled in the art to practice the embodiments and to show the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawings, those skilled in the art will understand the concepts of the present disclosure and recognize applications of these concepts not specifically addressed herein. It is understood that these concepts and applications are within the scope of the present disclosure and the accompanying claims.

[0010]

[0018] In this specification, the terms first, second, etc. may be used to describe various elements, but it will be understood that these elements should not be limited by these terms. These terms are used only to distinguish one element from another element. For example, a first element can be called a second element, and similarly, a second element can be called a first element, without departing from the scope of the present disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0011]

[0019] When an element, such as a layer, region, or substrate, is referred to as being "on" or extending "over" another element, it will be understood that it may be directly on or extending directly onto the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements. Similarly, when an element, such as a layer, region, or substrate, is referred to as being "on" or extending "over" another element, it will be understood that it may be directly on or extending directly onto the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly on" or extending "over" another element, there are no intervening elements. When an element is referred to as being "connected" or "coupled" to another element, it will be understood that it may be directly connected or coupled to the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.

[0012]

[0020] Relative terms such as "below" or "above" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe the relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms, and those discussed above, are intended to encompass different orientations of the device in addition to the orientation depicted.

[0013]

[0021] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise. It will be further understood that as used herein, the terms "comprises," "comprising," "including," and / or "comprising" specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0014]

[0022] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which this disclosure belongs. Terms used herein should be interpreted to have a meaning consistent with their meaning in the context of this specification and related art, and it will be further understood that they are not to be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0015]

[0023] Power packages can generally be categorized as either power modules or discrete packages. Power modules often contain many more power semiconductor dies (e.g., >2) than discrete packages, and in some configurations include a power substrate, power contacts, signal contacts, and a base plate. The power substrate of a power module is used for electrical interconnection as well as electrical insulation. The base plate provides structural support and heat spreading. Internally, a power module often comprises a topology (or arrangement) of power semiconductor dies to form an electrical circuit (e.g., half bridge, full bridge, three phase, etc.). Power modules are generally molded or protected by a housing and encapsulation material.

[0016]

[0024] Discrete packages differ from modules in that they are formed on a metal leadframe array with a smaller number (e.g., 1-2) of power semiconductor dies. Discrete packages may or may not have a power substrate that provides electrical isolation. The leadframe array is trimmed and formed to create the power and signal connections. The assembly is molded for electrical isolation, mechanical support, and protection from the surrounding environment (e.g., moisture). Discrete packages typically house a single switch position, which often has a single power semiconductor die, such as a metal-oxide-semiconductor field-effect transistor (MOSFET) or insulated-gate bipolar transistor (IGBT), with or without an anti-parallel diode.

[0017]

[0025] There are two critical electrical loops within a power package: (1) the power loop (e.g., drain-source or collector-emitter), and (2) the signal loop (e.g., gate-source or gate-emitter). The power loop is the high-voltage, high-current path through the switch that delivers power to the load. The signal loop is the low-voltage, low-current path that controls the power loop (i.e., actuates the turn-on and turn-off). For optimal switching performance, the power and signal loops should be completely independent of each other. Independence of the power and signal loops allows for low switching losses with fast, well-controlled dynamics.

[0018]

[0026] Both the power loop and the signal loop are connected to the source (or emitter) of the power semiconductor die in the power package. When the power loop couples to the signal loop, additional dynamics are introduced by either positive or negative feedback. Negative feedback typically results in extra losses because the power path coupling resists the control signal (i.e., the power path coupling tries to turn the power semiconductor die off when the control signal is trying to turn the device on). Positive feedback typically causes instability because the power path coupling amplifies the control signal until the power semiconductor die is destroyed. Ultimately, the coupling between the power loop and the signal loop results in poor switching quality, slower switching speeds, increased losses, and possible destruction of the power semiconductor die.

[0019]

[0027] In light of the above, it is desirable to ensure independence of the power and control loops within a power package. One approach to achieving this is to use a source Kelvin connection (or emitter Kelvin connection). The Kelvin connection is individually coupled to the source or emitter for actuation purposes. In general, the closer the individual connections from the power and signal loops are to the power semiconductor die, the better the switching performance that can be achieved. Ideally, the Kelvin connection would be made to the source or emitter via a separate path, such as a separate wire bond, interconnect, etc., independent of the power loop.

[0020]

[0028] Kelvin connections are made to both power modules and discrete packages. Although used for some time, Kelvin connections significantly complicate the layout of the power semiconductor die within. A true Kelvin connection requires separate paths to the source or emitter of the semiconductor die, which requires additional wirebonds or interconnects. These additional wirebonds or interconnects create complex layout problems.

[0021]

[0029] To avoid the complex layout problems discussed above, a discrete package often contains only a single power semiconductor die, and multiple discrete packages are paralleled using external connections (as opposed to paralleling multiple semiconductor dies in a discrete package). This effectively increases the current carrying capacity, but the external connections between the packages introduce a significant amount of inductance, so the switching of the parallel discrete packages must be slowed down at the gate driver level to ensure balanced switching between the packages. In addition, individual gate resistors must be added to avoid high frequency oscillations caused by positive feedback mechanisms introduced by the transconductance and stray inductance of the semiconductor dies in the parallel packages. Finally, paralleling packages requires a large area for a given solution.

[0022]

[0030] In addition to the layout challenges discussed above, paralleling power semiconductor dies in a discrete package presents an additional problem in the form of transconductance mismatch between the power semiconductor dies. During switching of the power semiconductor dies, the input voltage rises and with it the output current. Two parallel power semiconductor dies will each have slightly different turn-on characteristics if there is a difference in transconductance. Thus, during switching, a different amount of current will flow through each power semiconductor die and therefore a different voltage will exist on each power semiconductor die. The voltage mismatch of the power semiconductor dies will result in a balancing current flowing between the power semiconductor dies during switching.

[0023]

[0031] The equalizing currents prefer the path of least resistance, which may pass through the signal loop instead of the power loop. Similar to interference problems resulting from coupling between the power loop and the signal loop, the equalizing currents may also affect the switching quality. Furthermore, the equalizing currents may also cause reliability issues if they flow through the signal loop.

[0024]

[0032] In light of the above, there is currently a need for improved power packages, and in particular improved power discrete packages that include several paralleled power semiconductor dies therein.

[0025]

[0033] 2 illustrates a top view of a discrete package 36 for power electronics according to one embodiment of the present disclosure. The discrete package 36 is a leadframe package including a power substrate 38, a first power switching contact 40, a second power switching contact 42, a control contact 44, and a Kelvin connection contact 46. The first power switching contact 40, the second power switching contact 42, the control contact 44, and the Kelvin connection contact 46 form all or part of the leadframe array of the discrete package 36. The power substrate 38 includes a power switching conductive trace 48, a control conductive trace 50, and a Kelvin conductive trace 52, each of which is separated from each other by a portion of insulating material such that the power switching conductive trace 48, the control conductive trace 50, and the Kelvin conductive trace 52 are electrically insulated from each other. Several power semiconductor dies 54 are provided on the power switching conductive traces 48 such that a first power switching pad 56 on the backside of each of the power semiconductor dies 54 is electrically coupled to the power switching conductive trace 48. On the top of each of the power semiconductor dies 54 opposite the backside, the power semiconductor die 54 includes a second power switching pad 58 (split into two portions), a control pad 60, and a Kelvin connection pad 62.

[0026]

[0034] Each of the power semiconductor dies 54 are transistors coupled in parallel to form a single switching position. Each of the power semiconductor dies 54 includes a semiconductor structure (not shown) disposed between a first power switching pad 56, a second power switching pad 58, and a control pad 60, configured such that a resistance of a power switching path between the first power switching pad 56 and the second power switching pad 58 is based on a control signal provided at the control pad 60. A Kelvin connection pad 62 is coupled to the second power switching pad 58 on the power semiconductor die 54. In one embodiment, each of the power semiconductor dies 54 is a MOSFET, with the first power switching pad 56 coupled to a drain region of the semiconductor structure, the second power switching pad 58 and the Kelvin connection pad 62 coupled to a source region of the semiconductor structure, and the control pad 60 coupled to a gate region of the semiconductor structure. In another embodiment, each of the power semiconductor dies 54 is an IGBT, with a first power switching pad 56 coupled to a collector region of the semiconductor structure, a second power switching pad 58 and a Kelvin connection pad 62 coupled to an emitter region of the semiconductor structure, and a control pad 60 coupled to a gate region of the semiconductor structure.

[0027]

[0035] 2, the first power switching contacts 40 are coupled to a first power switching pad 56 of each of the power semiconductor die 54, the second power switching contacts 42 are coupled to a second power switching pad 58 of each of the power semiconductor die 54, the control contacts 44 are coupled to a control pad 60 of each of the power semiconductor die 54, and the Kelvin connection contacts 46 are coupled to a Kelvin connection pad 62 of each of the power semiconductor die 54. Connections between the contacts and pads may be made by any suitable interconnect, such as direct attachment, wirebonds, or other suitable means. As described below, the control conductive traces 50 and the Kelvin conductive traces 52 enable connections between the contacts of the discrete package 36 and the power semiconductor die 54 without significant overlap or complex layout schemes.

[0028]

[0036] FIG. 3 illustrates a discrete package 36 according to one embodiment of the disclosure. As illustrated in FIG. 3, the first power switching contacts 40 are coupled to the power switching conductive traces 48 by direct contact attachment. The direct contact attachment can be achieved using solder, conductive epoxy, sintered metal, or the like. As discussed above, the power semiconductor dies 54 are provided on the power switching conductive traces 48 such that their first power switching pads 56 are in electrical contact with the power switching conductive traces 48. Thus, the first power switching contacts 40 are coupled to the first power switching pads 56 of each of the power semiconductor dies 54. The second power switching contacts 42 are coupled to the second power switching pads 58 of each of the power semiconductor dies 54 by direct contact attachment. Again, the direct contact attachment can be achieved using solder, conductive epoxy, sintered metal, or the like. As illustrated, a metal structure 64 is provided on the second power switching pads 58 of each of the power semiconductor dies 54 to enable the direct attachment. In particular, a portion of the metal structure 66 couples to the second power switching pads 58 of each of the power semiconductor dies 54, separate from the connection of the second power switching contacts 42 and the second power switching pads 58. This portion of the metal structure 66 serves as a equalizing connection to reduce voltage differences across the power semiconductor dies 54 during turn-on and turn-off due to transconductance mismatch. This may reduce or eliminate the equalizing currents discussed above, thereby improving the performance of the discrete package 36.

[0029]

[0037] The control pads 60 of each of the power semiconductor dies 54 are coupled to the control conductive traces 50 via one or more wire bonds 68, which in turn are coupled to the control contacts 44 via one or more wire bonds 68. In particular, a portion of the control conductive traces 50 run parallel to the power switching conductive traces 48, and thus, for both of the power semiconductor dies 54, there is a short length between its control pads 60 and the control conductive traces 50. Thus, the length of the wire bonds 68 between the control pads 60 and the control conductive traces 50 can be kept short, thereby minimizing stray inductance and providing flexibility in the layout of the power semiconductor dies 54 and the wire bonds 68. To further reduce the required length of the wire bonds 68, the control conductive traces 50 are angled with respect to the edges of the power substrate 38, as shown. In particular, the power switching conductive traces 48 are provided having at least one edge that is not parallel to the edges of the power substrate 38. The control conductive traces 50 are similarly provided with at least one edge that is not parallel to the edges of the power substrate 38, but is parallel to at least one edge of the power switching conductive traces 48. As shown, these edges form a fine "V" or "U" shape. This further reduces the required length of the wire bonds 68 between each control pad 60 of the power semiconductor die 54 and the control conductive traces 50.

[0030]

[0038] The Kelvin connection pad 62 of each of the power semiconductor dies 54 is coupled to the Kelvin conductive trace 52 via one or more wire bonds 68, which in turn are coupled to the Kelvin connection contacts 46 via one or more wire bonds 68. A power switching loop is formed between the first power switching contact 40 and the second power switching contact 42. A signal loop is formed between the control contact 44 and the Kelvin connection contact 46. A control signal is provided between the control contact 44 and the Kelvin connection contact 46 (i.e., across the signal loop) to control the resistance between the first power switching contact 40 and the second power switching contact 42 (i.e., across the power loop). Although a Kelvin connection pad 62 is shown on each of the power semiconductor dies 54, the power semiconductor dies 54 may also be provided without a separate Kelvin connection pad, such that the Kelvin connection contact 46 is coupled to the second power switching pad 60 of each of the power semiconductor dies 54. Such an embodiment provides the same advantages as discussed herein, so long as the signal paths of the power loop and the signal loop remain separate (i.e., the Kelvin connection contact 46 is coupled to the second power switching pad 60 via a separate wire bond or interconnect other than the second power switching contact 42).

[0031]

[0039] Similar to the control conductive trace 50 discussed above, the Kelvin conductive trace 52 also includes at least one edge that is not parallel to the edge of the power substrate 38 but is parallel to at least one edge of the power switching conductive trace 48. By providing the Kelvin conductive trace 52 in this manner, the length of the wire bonds 68 coupling the Kelvin connection pad 62 of each of the power semiconductor dies 54 to the Kelvin conductive trace 52 is reduced. By providing the conductive trace on the power substrate 38, the Kelvin connection contacts 46 can be individually coupled to the second power switching pad 58 of each of the power semiconductor dies 54, and in particular, the Kelvin connection contacts 46 can be coupled to the Kelvin connection pad 62 of each of the power semiconductor dies 54. Thus, the discrete package 36 provides a true Kelvin connection, such that the power loop and the signal loop are not coupled. As discussed above, the use of a Kelvin connection in the signal loop of a discrete package provides significant benefits in switching speed and its stability. Thus, the layout of the discrete package 36 allows for improved performance.

[0032]

[0040] The performance provided by the layout of the discrete package 36 discussed above In addition to performance advantages, the flexibility of the discrete package also provides significant advantages. For example, rather than directly attaching the first power switching contact 40 to the power switching conductive trace 48 and the second power switching contact 42 to the second power switching pad 58 of each of the power semiconductor dies 54, the first power switching contact 40 may be coupled to the power switching conductive trace 48 via several wire bonds 68 and the second power switching contact 42 may be coupled to the second power switching pad 58 of each of the power semiconductor dies 54 via several wire bonds 68, as shown in FIG. 4. In particular, when using wire bonds 68 to couple the second power switching contact 42 to the second power switching pad 58 of each of the power semiconductor dies 54, one or more leveling wire bonds 70 are coupled between the second power switching pad 58 of each of the power semiconductor dies 54. As discussed above, this may reduce the voltage difference across the power semiconductor die 54 during turn-on and turn-off due to transconductance mismatch, thereby reducing or eliminating leveling currents and improving the performance and reliability of the discrete package 36.

[0033]

[0041] Further illustrating the flexibility of the layout of the discrete package 36, FIG. 5 illustrates a discrete package 36 in which the first power switching contact 40, the second power switching contact 42, the control contact 44, and the Kelvin connection contact 46 are all located on one side of the discrete package 36. FIG. 6 illustrates a discrete package 36 in which the first power switching contact 40, the second power switching contact 42, the control contact 44, and the Kelvin connection contact 46 are located on the same side of the discrete package 36, but the first power switching contact 40 is coupled to the power switching conductive trace 48 via a wire bond 68 rather than being directly attached, and the second power switching contact 42 is coupled to the second power switching pad 58 of each of the power semiconductor dies 54 via a wire bond 68 rather than being directly attached as in FIG. 5. Notably, the configurations of the discrete package 36 illustrated in FIGS. 5 and 6 are achievable with minimal modification of the discrete package 36 (e.g., the power semiconductor dies 54 are moved slightly closer to each other). Figure 7 shows a discrete package 36 as in Figure 2, with the locations of the second power switching contact 42, the control contact 44, and the Kelvin connection contact 46 mirrored. Figures 5-7 show the flexibility of the discrete package 36, which allows it to be adapted to a variety of systems.

[0034]

[0042] Although a discrete package 36 including only two power semiconductor dies 54 is shown above, the principles of the present disclosure apply equally to a discrete package 36 including any number of power semiconductor dies 54. Thus, FIG. 8 illustrates a discrete package 36 including four power semiconductor dies 54. As shown, the discrete package 36 is substantially similar to that described above. The control conductive traces 50 and Kelvin conductive traces 52 allow additional power semiconductor dies 54 to be easily coupled to the contacts of the discrete package 36 without complex routing or layout. Although not shown, many additional configurations and layouts of the discrete package 36 are possible, all of which are contemplated herein.

[0035]

[0043] Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure, and all such improvements and modifications are contemplated within the scope of the concepts disclosed herein and the following claims.

Claims

1. 1. A power electronics package comprising: A power board, a power switching conductive trace on the power substrate, the power switching conductive trace including at least one edge that is not parallel to any edge of the power substrate; several power semiconductor dies on the power switching conductive traces; a Kelvin conductive trace coupled to the power semiconductor die; a control conductive trace coupled to the power semiconductor die; Equipped with the control conductive trace is disposed on the power substrate, at least one edge of the control conductive trace being parallel to the at least one edge of the power switching conductive trace that is not parallel to any edge of the power substrate; The control conductive traces run parallel to edges of the power switching conductive traces.

2. 2. The package of claim 1 , wherein the Kelvin conductive trace is coupled to the power semiconductor die, at least one edge of the Kelvin conductive trace is parallel to the at least one edge of the power switching conductive trace that is not parallel to any edge of the power substrate, and the power switching conductive trace comprises at least one edge that is V-shaped or U-shaped.

3. 3. The package of claim 2 , wherein the control conductive trace is disposed between the power switching conductive trace and the Kelvin conductive trace, the control conductive trace comprising at least one edge that is angled relative to an edge of the power substrate.

4. 2. The package of claim 1, wherein the number of power semiconductor dies comprises at least two power semiconductor dies, and the power switching conductive traces comprise at least one edge that is V-shaped or U-shaped.

5. 5. The package of claim 4, wherein each of the at least two power semiconductor dies comprises: a first power switching pad and a second power switching pad; A control pad; a semiconductor structure between the first power switching pad, the second power switching pad, and the control pad, the semiconductor structure being configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad; A package comprising:

6. 6. The package of claim 5, wherein each of the at least two power semiconductor dies comprises a Kelvin connection pad coupled to the second power switching pad.

7. 7. The package of claim 6, a first power switching contact coupled to the first power switching pad of each of the at least two power semiconductor dies; a second power switching contact coupled to the second power switching pad of each of the at least two power semiconductor dies; a control contact coupled to the control pad of each of the at least two power semiconductor dies; and a Kelvin connection contact coupled to the Kelvin connection pad of each of the at least two power semiconductor dies; Further packaged.

8. 8. The package of claim 7, further comprising one or more power switching equalizing wirebonds coupled between the second power switching pads of each of the at least two power semiconductor dies.

9. 6. The package of claim 5, wherein each of the at least two power semiconductor dies is a power metal oxide semiconductor field effect transistor (MOSFET) semiconductor die; the first power switching pad is coupled to a drain region of the semiconductor structure; the second power switching pad is coupled to a source region of the semiconductor structure; The control pad is coupled to a gate region of the semiconductor structure.

10. 6. The package of claim 5, wherein each of the at least two power semiconductor dies is a power insulated gate bipolar transistor (IGBT) semiconductor die; the first power switching pad is coupled to a collector region of the semiconductor structure; the second power switching pad is coupled to an emitter region of the semiconductor structure; The control pad is coupled to a gate region of the semiconductor structure.

11. 1. A power electronics package comprising: A power board, a power switching conductive trace on the power substrate, the power switching conductive trace including at least one edge that is not parallel to any edge of the power substrate; several power semiconductor dies on the power switching conductive traces; a Kelvin conductive trace coupled to the power semiconductor die, the Kelvin conductive trace being disposed on the power substrate, at least one edge of the Kelvin conductive trace being parallel to the at least one edge of the power switching conductive trace that is not parallel to any edge of the power substrate; and at least one of the Kelvin conductive traces and the power switching conductive traces comprises at least one edge that is V-shaped or U-shaped.

12. 12. The package of claim 11 further comprising a control conductive trace on the power substrate, the control conductive trace being coupled to the power semiconductor die, at least one edge of the control conductive trace being parallel to the at least one edge of the power switching conductive trace that is not parallel to any edge of the power substrate, and the control conductive trace running parallel to an edge of the power switching conductive trace.

13. 13. The package of claim 12, wherein the control conductive trace comprises at least one edge that is angled relative to an edge of the power substrate, the control conductive trace being disposed between the power switching conductive trace and the Kelvin conductive trace.

14. 12. The package of claim 11, wherein the number of power semiconductor dies comprises at least two power semiconductor dies.

15. 15. The package of claim 14, wherein each of the at least two power semiconductor dies comprises: a first power switching pad and a second power switching pad; A control pad; a semiconductor structure between the first power switching pad, the second power switching pad, and the control pad, the semiconductor structure being configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad; A package comprising:

16. 16. The package of claim 15, wherein each of the at least two power semiconductor dies comprises a Kelvin connection pad coupled to the second power switching pad.

17. 17. The package of claim 16, a first power switching contact coupled to the first power switching pad of each of the at least two power semiconductor dies; a second power switching contact coupled to the second power switching pad of each of the at least two power semiconductor dies; a control contact coupled to the control pad of each of the at least two power semiconductor dies; and a Kelvin connection contact coupled to the Kelvin connection pad of each of the at least two power semiconductor dies; A package that further includes:

18. 20. The package of claim 17, further comprising one or more power switching equalizing wirebonds coupled between the second power switching pads of each of the at least two power semiconductor dies.

19. 16. The package of claim 15, wherein each of the at least two power semiconductor dies is a power metal oxide semiconductor field effect transistor (MOSFET) semiconductor die; the first power switching pad is coupled to a drain region of the semiconductor structure; the second power switching pad is coupled to a source region of the semiconductor structure; The control pad is coupled to a gate region of the semiconductor structure.

20. 16. The package of claim 15, wherein each of the at least two power semiconductor dies is a power insulated gate bipolar transistor (IGBT) semiconductor die; the first power switching pad is coupled to a collector region of the semiconductor structure; the second power switching pad is coupled to an emitter region of the semiconductor structure; The control pad is coupled to a gate region of the semiconductor structure.

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