SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

A substrate processing device according to one embodiment of the present disclosure comprises a holder (31), a liquid supplying unit (40), and an analysis unit (60). The holder (31) holds and rotates a substrate. The liquid supplying unit (40) supplies a processing liquid (S) to the substrate. The analysis unit (60) analyzes the processing liquid (S). Moreover, the analysis unit (60) comprises a liquid receiver (61) and a concentration sensor (62). The liquid receiver (61) receives the processing liquid (S) flowing from the substrate. The concentration sensor (62) detects the concentration of components contained in the processing liquid (S) accumulated inside the liquid receiver (61).

Description

[Technical Field]

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, in batch processing in which a plurality of substrates such as semiconductor wafers (hereinafter also referred to as wafers) are immersed in a process, a technique for detecting the concentration of components contained in a process liquid used in such processing has been known (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-261793 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of accurately detecting the concentration of components contained in a processing liquid used in single-substrate processing. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a holding unit, a liquid supply unit, and an analysis unit. The holding unit holds and rotates a substrate. The liquid supply unit supplies a processing liquid to the substrate. The analysis unit analyzes the processing liquid. The analysis unit also includes a liquid receiving unit and a concentration sensor. The liquid receiving unit receives the processing liquid flowing out from the substrate. The concentration sensor detects the concentration of components contained in the processing liquid remaining in the liquid receiving unit. [Effects of the Invention]

[0006] According to the present disclosure, the concentrations of components contained in a processing liquid used in single-substrate processing can be detected with high accuracy. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a schematic diagram showing an example of a specific configuration of a processing unit according to the embodiment. [Figure 3] FIG. 3 is a diagram illustrating an example of the configuration of the analysis unit according to the embodiment. [Figure 4] FIG. 4 is a diagram illustrating an example of a configuration of an analysis unit according to the first modification of the embodiment. [Figure 5] FIG. 5 is a diagram illustrating an example of the configuration of an analysis unit according to the second modification of the embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of the configuration of an analysis unit according to the third modification of the embodiment. [Figure 7] FIG. 7 is a schematic diagram showing an example of a specific configuration of a processing unit according to the fourth modification of the embodiment. [Figure 8] FIG. 8 is a schematic diagram showing an example of a specific configuration of a processing unit according to the fifth modification of the embodiment. [Figure 9] FIG. 9 is a schematic diagram showing an example of a specific configuration of a processing unit according to the sixth modification of the embodiment. [Figure 10] FIG. 10 is a schematic diagram showing an example of a specific configuration and operation of a processing unit according to the seventh modification of the embodiment. [Figure 11] FIG. 11 is a schematic diagram showing an example of a specific configuration and operation of a processing unit according to the seventh modification of the embodiment. [Figure 12] FIG. 12 is a schematic diagram showing an example of a specific configuration and operation of a processing unit according to the seventh modification of the embodiment. [Figure 13] FIG. 13 is a schematic diagram showing an example of a specific configuration of a processing unit according to the eighth modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method disclosed herein will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments described below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from the actual situation. Furthermore, the dimensional relationships and ratios may differ between the drawings.

[0009] BACKGROUND ART In a batch process in which a plurality of substrates such as semiconductor wafers (hereinafter also referred to as wafers) are immersed in a batch, a technique for detecting the concentration of components contained in a processing solution used in such a process has been known.

[0010] On the other hand, in single-wafer processing in which a processing liquid is discharged onto a rotating substrate one by one to perform liquid processing, it is extremely difficult to accurately detect the concentration of components contained in the processing liquid used in such processing, because the thickness of the liquid film formed on the substrate is very thin, and when the processing liquid on the substrate is measured, a measurement length sufficient for accurately detecting the concentration of the components cannot be secured.

[0011] Therefore, it is desired to realize a technology that can overcome the above-mentioned problems and accurately detect the concentrations of components contained in the processing liquid used in single-substrate processing.

[0012] <Outline of the substrate processing system> First, a schematic configuration of a substrate processing system 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus. In the following, to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0013] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0014] The carry-in / out station 2 includes a FOUP placement section 11 and a transport section 12. On the FOUP placement section 11, a plurality of FOUPs H are placed, each accommodating a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0015] The transfer section 12 is provided adjacent to the FOUP placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the FOUP H and the transfer section 14 using the wafer holding mechanism.

[0016] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0017] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0018] The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0019] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0020] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0021] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the FOUP H placed on the FOUP placement unit 11 and places the removed wafer W on the delivery unit 14. The wafer W placed on the delivery unit 14 is then removed from the delivery unit 14 by the substrate transfer device 17 in the processing station 3 and carried into the processing unit 16.

[0022] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the delivery section 14. Then, the processed wafer W placed on the delivery section 14 is returned to the FOUP H of the FOUP placement section 11 by the substrate transfer device 13.

[0023] <Processing unit configuration> Next, the configuration of the processing unit 16 in which the analysis section 60 is mounted will be described with reference to Fig. 2. Fig. 2 is a schematic diagram showing an example of a specific configuration of the processing unit 16. As shown in Fig. 2, the processing unit 16 includes a chamber 20, a substrate processing section 30, a liquid supply section 40, a collection cup 50, and an analysis section 60.

[0024] The chamber 20 accommodates a substrate processing unit 30, a liquid supply unit 40, a collection cup 50, and an analysis unit 60. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0025] The substrate processing unit 30 includes a holder 31, a support 32, and a drive unit 33, and performs liquid processing on a placed wafer W. The holder 31 holds the wafer W horizontally. The support 32 is a member extending in the vertical direction, and its base end is rotatably supported by the drive unit 33, with its tip end supporting the holder 31 horizontally. The drive unit 33 rotates the support 32 around a vertical axis.

[0026] The substrate processing unit 30 rotates the support column 32 using the drive unit 33, thereby rotating the holder 31 supported by the support column 32, and thereby rotating the wafer W held by the holder 31.

[0027] The holder 31 holds the wafer W horizontally, for example, by adsorbing the lower surface of the wafer W. The holder 31 is not limited to an adsorption chuck and may be an electrostatic chuck or the like. The wafer W is held by the holder 31 with the surface on which substrate processing is performed facing upward.

[0028] The liquid supply unit 40 supplies a processing fluid to the wafer W. The liquid supply unit 40 includes nozzles 41a and 41b, an arm 42a that horizontally supports the nozzles 41a and 41b, and a pivoting and lifting mechanism 43a that pivots and lifts the arm 42a.

[0029] Furthermore, the liquid supply unit 40 includes a nozzle 41c, an arm 42b that horizontally supports the nozzle 41c, and a pivoting and lifting mechanism 43b that pivots and raises and lowers the arm 42b.

[0030] The nozzle 41a is connected to a DHF supply source 46a via a valve 44a and a flow rate regulator 45a. The DHF supply source 46a is, for example, a tank that stores DHF (dilute hydrofluoric acid). DHF is an example of a processing liquid.

[0031] The nozzle 41b is connected to an IPA supply source 46b via a valve 44b and a flow rate regulator 45b. The IPA supply source 46b is, for example, a tank that stores IPA (Isopropyl Alcohol). The IPA is another example of a processing liquid.

[0032] The nozzle 41c is connected to a DIW supply source 46c via a valve 44c and a flow rate regulator 45c. The DIW supply source 46c is, for example, a tank that stores DIW (Deionized Water). Such DIW is yet another example of a processing liquid.

[0033] DHF supplied from a DHF supply source 46a is discharged from the nozzle 41a, IPA supplied from an IPA supply source 46b is discharged from the nozzle 41b, and DIW supplied from a DIW supply source 46c is discharged from the nozzle 41c.

[0034] Collection cup 50 is disposed to surround holder 31, and collects processing liquid S (see FIG. 3) scattered from wafer W due to rotation of holder 31. A drainage port 51 is formed in the bottom of collection cup 50, and processing liquid S collected by collection cup 50 is discharged from drainage port 51 to the outside of processing unit 16. In addition, an exhaust port 52 is formed in the bottom of collection cup 50, which discharges gas supplied from FFU 21 to the outside of processing unit 16.

[0035] The analysis unit 60 detects the concentration of components contained in the processing liquid S that flows out from the wafer W due to the rotation of the holder 31. The analysis unit 60 is disposed, for example, outside the edge of the wafer W and inside the collection cup 50. The analysis unit 60 is also disposed at a lower position than the wafer W held by the holder 31.

[0036] <Configuration of the analysis unit> Next, the configuration of the analysis unit 60 according to the embodiment will be described with reference to Fig. 3. Fig. 3 is a diagram showing an example of the configuration of the analysis unit 60 according to the embodiment.

[0037] 3, the analyzing unit 60 according to the embodiment includes a liquid receiving unit 61 and a concentration sensor 62. The liquid receiving unit 61 receives the processing liquid S flowing out from a wafer W (see FIG. 2) that is being subjected to liquid processing while rotating. The concentration sensor 62 detects the concentration of components contained in the processing liquid S that remains in the liquid receiving unit 61.

[0038] The concentration sensor 62 according to the embodiment uses, for example, infrared spectroscopy to detect the concentration of the component contained in the treatment liquid S. The concentration sensor 62 has a light projecting part 62a and a light receiving part 62b.

[0039] The light projecting unit 62a is connected to an infrared light source (not shown), for example, by an optical fiber (not shown). The light projecting unit 62a irradiates the infrared light IR supplied from the infrared light source onto the light receiving unit 62b via the measurement target 65 of the liquid receiving unit 61.

[0040] Light receiving unit 62b is connected to a photometry unit (not shown), for example, by an optical fiber (not shown). Light receiving unit 62b receives infrared light IR irradiated from light projecting unit 62a via measurement unit 65 of liquid receiving unit 61, and sends the received light to the photometry unit. The photometry unit separates the received infrared light IR into spectral components and sends the data to control unit 18 (see FIG. 1).

[0041] Each substance has its own unique absorption spectrum. The control unit 18 can obtain the absorbance at a predetermined wavelength corresponding to the component to be measured from the absorption spectrum of infrared light IR, and calculate the concentration of that component.

[0042] For example, in the infrared light IR absorption spectrum obtained by the photometry unit, an absorption peak due to the OH bond of HO is observed near a wavelength of 1460 (nm), and two absorption peaks due to the C-H bond of IPA are observed near a wavelength of 1690 (nm).

[0043] Therefore, when detecting the concentration of HO in the treatment solution S, it is sufficient to focus on the absorbance A at the absorption peak of the OH group at a wavelength of approximately 1460 (nm). Note that the wavelength around 1460 (nm) is the overtone of the stretching vibration of the OH group, and the wavelength around 1690 (nm) is the overtone of the stretching vibration of the CH group.

[0044] The absorbance A is expressed by the Beer-Lambert law as follows: A = αLC (1) A: Absorbance α: absorption coefficient L: Measurement length C: Concentration

[0045] Based on the above formula (1), if the absorption coefficient α of the component to be detected and the measurement length L are known, the value of the concentration C can be determined. In this embodiment, the measurement length L is the distance L0 between the light-projecting unit 62a and the light-receiving unit 62b, as shown in FIG.

[0046] On the other hand, since the extinction coefficient α changes due to the influence of coexisting components, it is preferable to perform measurements using a processing solution S with an equal measurement length L under conditions close to the actual processing conditions, create a calibration curve, and calculate the value of the concentration C based on the calibration curve.

[0047] In this embodiment, the infrared light source of the concentration sensor 62 preferably emits infrared light IR in a continuous wavelength range, which allows the concentration of many components to be detected simply by changing the settings of the control unit 18.

[0048] Furthermore, even if the component to be detected is fixed, the absorption peak wavelength may shift depending on the surrounding substances present, so using infrared light (IR) with a continuous wavelength allows for more accurate measurements. Commercially available light sources such as halogen tungsten lamps can be used as such light sources.

[0049] The infrared light IR emitted by the infrared light source may have a single wavelength. For example, the infrared light source may be a tunable laser, or may be one that selectively extracts the absorption peak wavelength of a target component using an interference filter or the like. Alternatively, an interference filter, which is a bandpass filter, may be installed in the light projecting unit 62a to irradiate infrared light IR of a desired wavelength.

[0050] In this way, by using infrared light IR of a single wavelength, the calculation process in the control unit 18 can be simplified, and the calculation speed can be increased.

[0051] The light projecting unit 62a is preferably capable of projecting parallel light rays using a collimator or the like, but may also be capable of projecting light rays that are condensed onto the light receiving unit 62b in order to ensure the brightness of the optical system.

[0052] The photometry section connected to the light receiving section 62b separates the infrared light IR guided from the light receiving section 62b by an optical fiber as required, detects it, converts it into an electrical signal, and performs processing such as amplification as required.

[0053] The structure of the photometry unit is not particularly limited, and any known spectrophotometer can be used, such as a dispersive spectrophotometer using a diffraction grating or the like, or a non-dispersive spectrophotometer such as a Fourier transform infrared spectrophotometer. Note that when infrared light IR of a specific wavelength is projected from the light projecting unit 62a, a spectroscopic means in the photometry unit is not necessary.

[0054] The control unit 18 calculates the absorption spectrum and absorbance at a predetermined wavelength based on the electrical signal from the photometer. The control unit 18 also performs an averaging process by integrating the absorbance, or creates a frequency distribution within a unit time, calculates the median value, and performs a process to reduce the variability of the measurement data. The control unit 18 then performs concentration calculations, etc.

[0055] When infrared light IR having a continuous wavelength range is used, the wavelength range must include the wavelengths absorbed by the components to be detected. For example, when measuring HO and IPA, infrared light IR having a wavelength range including 1350 (nm) to 1720 (nm) is preferably irradiated.

[0056] Furthermore, in addition to the aforementioned absorption peak near 1460 (nm), absorption peaks for measuring the concentration of HO also exist near 1200 (nm), 1900 (nm), and 2600 (nm). The absorption peak near 1200 (nm) has a small extinction coefficient, but the absorption peaks near 1900 (nm) and 2600 (nm) have large extinction coefficients, so these absorption peaks may also be used.

[0057] Returning to the explanation of Figure 3, the liquid receiving part 61 has an inlet 63, an outlet 64, and a measurement part 65. The inlet 63 is where the processing liquid S flowing out from the wafer W flows in. The outlet 64 discharges the processing liquid S remaining inside the liquid receiving part 61. The outlet 64 is located at a lower position than the inlet 63.

[0058] The measurement portion 65 is a portion where the treatment liquid S is measured by the concentration sensor 62. That is, the measurement portion 65 is located between the light-emitting portion 62a and the light-receiving portion 62b, and is a portion through which the infrared light IR for measurement passes. The measurement portion 65 is located at a position lower than the inlet 63 and higher than the outlet 64.

[0059] Here, in the embodiment, the processing liquid S flowing out from the wafer W undergoing liquid processing while rotating is temporarily received in a liquid receiving section 61, and the concentration of the components contained in the processing liquid S in the liquid receiving section 61 is detected by a concentration sensor 62.

[0060] This allows a sufficient measurement length L to be secured for detecting the concentration of the component with high accuracy, compared to when infrared light is irradiated onto the liquid film of the processing liquid S formed on the wafer W to detect the concentration.

[0061] Therefore, according to the embodiment, the concentrations of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with high accuracy.

[0062] In the embodiment, the measurement length L is preferably, for example, 1 mm or more, and more preferably 10 mm or more, which allows the concentration of components contained in the processing liquid S used in the single-wafer processing of the wafers W to be detected with even greater accuracy.

[0063] In the embodiment, the liquid receiving part 61 has an inlet 63 at a position higher than the measurement part 65, and an outlet 64 at a position lower than the measurement part 65. This allows the treatment liquid S received in the liquid receiving part 61 to always flow to the outside so as not to stagnate in the measurement part 65.

[0064] Therefore, according to the embodiment, in single-wafer processing of wafers W, the time course of the component concentration of the processing liquid S flowing out from the wafers W can be continuously detected.

[0065] In addition, in the embodiment, the sizes of the inlet 63 and the outlet 64 are preferably set appropriately so that the processing liquid S always remains in the measurement portion 65 during the liquid processing of the wafer W. This makes it possible to continuously detect the component concentrations of the processing liquid S over time from the beginning to the end of the liquid processing of the wafer W.

[0066] For example, in the liquid processing of the wafer W according to the embodiment, first, the substrate is processed with DHF, then the rinse processing is performed with DIW, and then the drying processing is performed with IPA.

[0067] In the rinsing process using DIW, the end point of the rinsing process can be detected by detecting the concentration of DHF contained in the processing liquid S with the analysis unit 60. Furthermore, in the drying process using IPA, the end point of the drying process can be detected by detecting the concentration of DIW contained in the processing liquid S. That is, in this embodiment, it is possible to eliminate unnecessary time spent on the liquid processing.

[0068] Therefore, according to the embodiment, by providing the analysis section 60 in the processing unit 16, the overall processing time of the wafer W can be shortened, and the wafer W can be efficiently liquid-processed.

[0069] Furthermore, in the embodiment, since unnecessary liquid processing can be omitted, the cost of draining the used processing liquid S, the cost of preparing the processing liquid S, and the like can be reduced.

[0070] The liquid processing of the wafer W according to the embodiment is not limited to the above example, and any liquid processing in which two or more types of components are mixed in the processing liquid S can be applied.

[0071] Examples of chemical liquids used in the liquid processing of the wafer W according to the embodiment include HF (hydrofluoric acid), NH4OH (aqueous ammonia), H2SO4 (sulfuric acid), H2O2 (hydrogen peroxide), HCl (hydrochloric acid), and NH4F (ammonium fluoride).

[0072] In addition, in the liquid processing of the wafer W according to the embodiment, HNO3 (nitric acid), H3PO4 (phosphoric acid), TMAH (tetramethylammonium hydroxide), or the like may be used.

[0073] Furthermore, the end point detection process for the liquid processing according to the embodiment is not limited to the above example, and for example, in an etching process using an etching liquid, the end point of the etching process may be detected by detecting the concentration of the component to be etched in the processing liquid S.

[0074] Components to be etched in the processing solution S include, for example, Si (silicon), Ti (titanium), W (tungsten), Ge (germanium), Ni (nickel), Co (cobalt), and Ru (ruthenium).

[0075] In addition, in the embodiment, a nozzle (not shown) that discharges a cleaning liquid (such as DIW) into the liquid receiving section 61 may be provided in the analysis section 60. Then, the control section 18 may discharge the cleaning liquid from the nozzle to clean the inside of the liquid receiving section 61 when the wafer W is not being liquid-processed.

[0076] This makes it possible to prevent errors in concentration detection in the next liquid processing due to components remaining in the liquid receiving portion 61 in the immediately preceding liquid processing. Therefore, according to the embodiment, the concentrations of components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with even greater accuracy.

[0077] In addition, in the embodiment, the control unit 18 may correct the sensitivity of the infrared spectroscopic analysis during the cleaning process of the liquid receiving unit 61. This allows the concentration of components contained in the processing liquid S used in the single-wafer processing of the wafers W to be detected with even greater accuracy.

[0078] In the above embodiment, an example has been shown in which the concentration of the component contained in the treatment liquid S is detected by the concentration sensor 62 capable of infrared spectroscopic analysis, but the present disclosure is not limited to such an example.

[0079] For example, the concentration sensor 62 of the embodiment may detect the concentration of components contained in the processing liquid S flowing out from the wafer W using liquid chromatography mass spectrometry (LC / MS), gas chromatography mass spectrometry (GC / MS), ion chromatography (IC), or the like.

[0080] Furthermore, the concentration sensor 62 according to the embodiment may detect the concentration of components contained in the processing liquid S flowing out from the wafer W by, for example, total organic carbon measurement (TOC) or inductively coupled plasma mass spectrometry (ICP-MS).

[0081] In addition, in an embodiment, for example, the conductivity of the processing liquid S that flows out from the wafer W and accumulates in the liquid receiving portion 61 may be measured using a conductivity meter, and the concentration of the components contained in the processing liquid S may be detected based on the measured conductivity.

[0082] That is, the concentration sensor 62 according to the embodiment may include a conductivity meter, which also makes it possible to accurately detect the concentrations of components contained in the processing liquid S used in the single-wafer processing of the wafers W.

[0083] Furthermore, in the above embodiment, an example has been shown in which the analysis unit 60 detects the concentration of components contained in the processing liquid S flowing out from the wafer W, but the present disclosure is not limited to such an example. For example, the analysis unit 60 according to the embodiment may detect the amount of particles contained in the processing liquid S received in the liquid receiving unit 61 using a particle sensor provided in the analysis unit 60.

[0084] Furthermore, in the above embodiment, an example is shown in which the end point of the liquid treatment is detected based on the measured values ​​of the component concentrations of the treatment liquid S detected by the analysis unit 60 (i.e., the measured values ​​of the component concentrations are used as a trigger for ending the liquid treatment), but the present disclosure is not limited to such an example.

[0085] For example, in the present disclosure, the liquid processing implementation time (step processing time) stored in various recipe information may be set based on the measured values ​​of the component concentrations of the processing liquid S detected by the analysis unit 60.

[0086] For example, in the step of rinsing SC1 with pure water, which is performed after the processing step of SC1 (a mixture of ammonia and hydrogen peroxide solution), the determination that SC1 has been replaced with pure water can be made based on the measured values ​​of the component concentrations of the processing solution S.

[0087] In this case, the concentration during the replacement of SC1 with pure water can be determined, so it is possible to determine whether the concentration has dropped to a predetermined level. Also, once the replacement with pure water is completely completed, the concentration of SC1 is no longer detected, so it is possible to determine that the replacement process is complete.

[0088] Furthermore, in the process of replacing pure water with a low surface tension liquid (such as IPA), the state of replacement can be determined by measuring the component concentrations of the processing liquid S during the process, and it can be determined whether the replacement has been completed or not. In this case, the component concentrations of the processing liquid S can be determined using pure water or IPA.

[0089] Furthermore, when switching from an acidic processing liquid to an alkaline processing liquid or from an alkaline processing liquid to an acidic processing liquid, the concentration of the processing liquid can be measured using the technology disclosed herein to grasp the state of substitution and stop the supply of the processing liquid at an appropriate timing. In this case, for example, an example of the acidic processing liquid is SPM (a mixture of sulfuric acid and hydrogen peroxide solution). For example, an example of the alkaline processing liquid is SC1.

[0090] In this case, the operator measures in advance the time required for the component concentration of the processing liquid S detected by the analysis unit 60 to reach a given concentration. After the component concentration of the processing liquid S reaches the given concentration, the operator does not measure the component concentration any more, but adds up the measured time required for the given concentration to be reached and the given fixed time, and inputs the result into the recipe information as the implementation time of the liquid processing for replacing the processing liquid with a different processing liquid.

[0091] This allows a highly appropriate liquid processing time to be recorded in the recipe information without using an expensive, highly accurate concentration sensor, thereby reducing the running costs of the liquid processing.

[0092] In addition, in the present disclosure, in a liquid process in which a processing liquid is replaced with a different processing liquid, if the control unit 18 finds that the component concentration of the processing liquid S is higher than a given set concentration when the execution time based on the recipe information is reached, the control unit 18 may output an alarm to that effect to the outside.

[0093] In this case, the determination may be made by measuring the concentration of the processing liquid to be replaced, or by measuring the concentration of a different processing liquid to be used for replacement.

[0094] This alarm may be generated, for example, when some malfunction occurs in the supply valve of the processing liquid executed in the processing recipe, or when some malfunction occurs in the rotation control mechanism (for example, the drive unit 33).

[0095] Further, for example, a malfunction may occur in the moving mechanism of the processing liquid supply nozzle (for example, the swivel lifting mechanisms 43a and 43b), or in the measuring means (for example, the concentration sensor 62) itself. In this case, such an alarm may be output as an abnormality alarm indicating that some abnormality has occurred in the processing unit 16.

[0096] Furthermore, in the present disclosure, when the above-described alarm is output, the control unit 18 changes the transfer schedule for unprocessed wafers W so as to exclude the processing unit 16 for which the alarm was output from the transfer schedule for transferring wafers W. Then, the control unit 18 preferably transfers the unprocessed wafers W to a processing unit 16 that can process the wafers W, and controls the processing unit 16 for which the alarm was output to stop loading.

[0097] If this alarm occurs continuously after processing several wafers W, or if it occurs multiple times within a lot, it is assumed that some of the above-mentioned problems have occurred in the processing unit 16, and the control unit 18 will change the transfer schedule.

[0098] In addition, in the present disclosure, when the above-mentioned alarm is output, the control unit 18 may rescue the wafer W by executing a rescue recipe for the wafer W being processed in the processing unit 16 for which the alarm was output.

[0099] This rescue recipe is a setting that inserts a predetermined delay time into the step following the replacement step to be executed in order to extend the set time for the step that completes the replacement process. Then, the control unit 18 makes a judgment based on the concentration measurement value at the end of the replacement step time, and decides whether or not to interrupt the rescue recipe.

[0100] This allows the replacement process to be completed for the wafer W that is the target of the rescue recipe. The predetermined delay time may be set to the time required for the replacement process to be completely completed, which is obtained through a prior test evaluation.

[0101] <Variation 1> Next, various modifications of the substrate processing according to the embodiment will be described with reference to Figures 4 to 13. Figure 4 is a diagram showing an example of the configuration of an analysis unit 60 according to a first modification of the embodiment.

[0102] 4, the analyzing unit 60 according to the first modification differs from the above embodiment in the configuration of the concentration sensor 62. Specifically, the first modification uses a concentration sensor 62 in which a light projecting unit 62a (see FIG. 3) and a light receiving unit 62b (see FIG. 3) are integrated.

[0103] A mirror 66 is provided on the opposite side of the measurement portion 65 in the liquid receiving portion 61 so as to face the concentration sensor 62. The mirror 66 reflects the infrared light IR emitted from the concentration sensor 62 back to the concentration sensor 62.

[0104] Even with this configuration, by measuring the processing liquid S remaining in the liquid receiving portion 61 with the concentration sensor 62, the concentration of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with high accuracy.

[0105] Furthermore, in the first modification, it is possible to obtain a measurement length L that is twice the distance between the concentration sensor 62 and the mirror 66. That is, in the first modification, even if the size of the liquid receiving portion 61 is reduced, it is possible to obtain a sufficient measurement length L.

[0106] Therefore, according to the embodiment, even in a processing unit 16 in which the excess space in the collection cup 50 is small, the analysis section 60 can be installed without any problems.

[0107] <Variation 2> Fig. 5 is a diagram showing an example of the configuration of an analysis unit 60 according to Modification 2 of the embodiment. As shown in Fig. 5, the analysis unit 60 according to Modification 2 differs from the above embodiment in the configuration of the liquid receiving unit 61. Specifically, in Modification 2, multiple outlets 64 (two in the figure) are provided at the bottom of the liquid receiving unit 61.

[0108] This allows the processing liquid S received in the liquid receiving portion 61 to flow more smoothly to the outside without stagnating in the measurement portion 65. Therefore, according to the second modification, in single-wafer processing of wafers W, the concentration of components in the processing liquid S flowing out from the wafers W over time can be detected smoothly.

[0109] In the example of FIG. 5, an example in which two discharge ports 64 are provided in the liquid receiving portion 61 is shown, but the present disclosure is not limited to this example, and three or more discharge ports 64 may be provided in the liquid receiving portion 61.

[0110] <Variation 3> 6 is a diagram showing an example of the configuration of an analysis unit 60 according to Modification 3 of the embodiment. As shown in Fig. 6, the analysis unit 60 according to Modification 3 differs from the above-described embodiment in the arrangement and configuration of the liquid receiving unit 61. Specifically, in Modification 3, the liquid receiving unit 61 is provided outside the collection cup 50 and is integrated with the collection cup 50.

[0111] Specifically, an opening 50b is formed in the side wall 50a of the collection cup 50, and the opening 50b is connected to an inlet 63 of the liquid receiving portion 61. In addition, the liquid receiving portion 61 is formed on the outer side of the side wall 50a of the collection cup 50 using a part of the side wall 50a.

[0112] Furthermore, a discharge flow path 67 is connected to the discharge port 64 of the liquid receiving portion 61 , and the discharge flow path 67 is connected to the liquid discharge port 51 of the recovery cup 50 .

[0113] Even with this configuration, the concentration of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be accurately detected by measuring the processing liquid S remaining in the liquid receiving portion 61 with the concentration sensor 62 (see Figure 3).

[0114] Furthermore, in the third modification, even in a processing unit 16 in which there is no excess space in the collection cup 50, the analysis section 60 can be installed without any problems.

[0115] In this modification 3, liquid receiving portion 61 and the like may be configured to be detachable. In this case, when liquid receiving portion 61 and the like is to be removed, opening 50b formed in collection cup 50 may be closed with a lid or the like.

[0116] <Variation 4> 7 is a schematic diagram showing an example of a specific configuration of a processing unit 16 according to Modification 4 of the embodiment. As shown in Fig. 7, Modification 4 differs from the above embodiment in the arrangement of the analysis unit 60. Specifically, in Modification 4, the analysis unit 60 is provided not inside the collection cup 50 but in the discharge flow path 53 connected to the drain outlet 51 of the collection cup 50.

[0117] In the fourth modification, the treatment liquid S (see FIG. 3) collected by the collection cup 50 and flowing out from the drain outlet 51 to the discharge flow path 53 is received by a liquid receiving portion 61 (see FIG. 3). Furthermore, the concentration of the components contained in the treatment liquid S received by the liquid receiving portion 61 is detected by a concentration sensor 62 (see FIG. 3).

[0118] Even with this configuration, the control unit 18 (see FIG. 1) can accurately detect the concentrations of the components contained in the processing liquid S used in the single-wafer processing of the wafers W.

[0119] Furthermore, in the fourth modification, even in a processing unit 16 in which there is no excess space in the collection cup 50, the analysis section 60 can be installed without any problems.

[0120] <Variation 5> 8 is a schematic diagram showing an example of a specific configuration of the processing unit 16 according to Modification 5 of the embodiment. As shown in FIG. 8, Modification 5 differs from the above embodiment in the arrangement and configuration of the analysis section 60.

[0121] Specifically, in the fifth modification, the liquid receiving portion 61 of the analysis portion 60 is provided not inside the collection cup 50 but in the discharge flow path 53 connected to the drain outlet 51 of the collection cup 50. In addition, a liquid delivery pipe 68 is connected to the liquid receiving portion 61.

[0122] The liquid delivery pipe 68 is connected to a measurement section 69 provided at a different location from the liquid receiving section 61, and delivers the treatment liquid S received in the liquid receiving section 61 from the liquid receiving section 61 to the measurement section 69. The analysis section 60 then uses a concentration sensor 62 to detect the concentration of the components contained in the treatment liquid S delivered to the measurement section 69.

[0123] Even with this configuration, the control unit 18 (see FIG. 1) can accurately detect the concentrations of the components contained in the processing liquid S used in the single-wafer processing of the wafers W.

[0124] Furthermore, in the fifth modification, even in a processing unit 16 in which there is no excess space within the collection cup 50 and the excess space around the discharge flow path 53 is small, the analysis section 60 can be installed without any problems.

[0125] <Variation 6> 9 is a schematic diagram showing an example of a specific configuration of a processing unit 16 according to Modification 6 of the embodiment. As shown in FIG. 9, Modification 6 differs from Modification 5 in the arrangement of the liquid receiving portion 61.

[0126] Specifically, in the sixth modification, the liquid receiving portion 61 of the analysis portion 60 is provided inside the collection cup 50, not in the discharge flow path 53 (see FIG. 8). In addition, a liquid delivery pipe 68 is connected to the liquid receiving portion 61.

[0127] The liquid delivery pipe 68 is connected to a measurement section 69 provided at a different location from the liquid receiving section 61, and delivers the treatment liquid S received in the liquid receiving section 61 from the liquid receiving section 61 to the measurement section 69. The analysis section 60 then uses a concentration sensor 62 to detect the concentration of the components contained in the treatment liquid S delivered to the measurement section 69.

[0128] Even with this configuration, the control unit 18 (see FIG. 1) can accurately detect the concentrations of the components contained in the processing liquid S used in the single-wafer processing of the wafers W.

[0129] Furthermore, in the sixth modification, even in a processing unit 16 in which the excess space in the collection cup 50 is small, the analysis section 60 can be installed without any problems.

[0130] <Variation 7> 10 to 12 are schematic diagrams showing an example of the specific configuration and operation of a processing unit 16 according to Modification 7 of the embodiment. As shown in Fig. 10, in Modification 7, the configuration of the collection cup 50 is different from that of the above embodiment.

[0131] Specifically, the collection cup 50 according to the seventh modification has a first collection cup 80, a second collection cup 90, and a third collection cup 100. The first collection cup 80 is the outermost collection cup, the third collection cup 100 is the innermost collection cup, and the second collection cup 90 is the collection cup provided between the first collection cup 80 and the third collection cup 100.

[0132] The second collection cup 90 has a lifting cup 91, a fixed cup 92, a lifting rod 93, and a canopy portion 94. The lifting cup 91 has a cylindrical lower portion and a semi-conical upper portion that tapers inward as it extends upward.

[0133] The fixed cup 92 is a generally cylindrical part provided below the lift cup 91. The fixed cup 92 and the lift cup 91 form a cup body that receives the processing liquid S that splashes from the rotating wafer W. The lift cup 91 and the fixed cup 92 are arranged so that they partially overlap each other so that the cup body can be maintained even when the lift cup 91 is lifted.

[0134] The lifting rod 93 is provided below the lifting cup 91 so as to be embedded inside the fixed cup 92. The lifting rod 93 is connected to the lifting cup 91 by, for example, magnetic force, and moves up and down together with the lifting cup 91.

[0135] The eaves portion 94 is provided on the fixed cup 92 and covers from above the opening of the exhaust port 52 formed to penetrate inside the fixed cup 92. This makes it possible to prevent the processing liquid S collected by the collection cup 50 from flowing into the exhaust port 52.

[0136] The third collection cup 100 has a lifting cup 101, a fixed cup 102, a lifting rod 103, and a canopy portion 104. The lifting cup 101 has a cylindrical lower portion and a semi-conical upper portion that tapers inward as it extends upward.

[0137] The fixed cup 102 is a generally cylindrical part provided below the lift cup 101. The fixed cup 102 and the lift cup 101 form a cup body that receives the processing liquid S scattered from the rotating wafer W. The lift cup 101 and the fixed cup 102 are arranged so that they partially overlap each other so that the cup body can be maintained even when the lift cup 101 is lifted.

[0138] The lift rod 103 is provided below the lift cup 101 so as to be embedded inside the fixed cup 102. The lift rod 103 is connected to the lift cup 101 by, for example, magnetic force, and moves up and down together with the lift cup 101.

[0139] The eaves portion 104 is provided on the fixed cup 102 and covers from above the opening of the exhaust port 52 formed to penetrate inside the fixed cup 102. This makes it possible to prevent the processing liquid S collected by the third collection cup 100 from flowing into the exhaust port 52.

[0140] In the example of FIG. 10, when DHF is supplied to wafer W from nozzle 41a, lift cup 91 of second collecting cup 90 and lift cup 101 of third collecting cup 100 are both placed at given lowered positions.

[0141] Therefore, the processing liquid S scattered from the rotating wafer W flows into the space G1 formed between the first collection cup 80 and the second collection cup 90. Then, the processing liquid S is discharged to the outside from the drain outlet 51A formed on the downstream side of the space G1.

[0142] In Modification 7, analyzing unit 60A is disposed in space G1 formed between first collecting cup 80 and second collecting cup 90. This allows the concentrations of components contained in processing solution S to be detected in the liquid processing in which DHF is supplied to wafer W from nozzle 41a.

[0143] In the seventh modification, the recovery cup 50 is operated to discharge the processing liquid S to a drain port other than the drain port 51A. For example, as shown in FIG. 11, when DIW is supplied to the wafer W from the nozzle 41c, the control unit 18 (see FIG. 1) moves the lift cup 91 and the lift rod 93 to a given elevated position.

[0144] As a result, the processing liquid S scattered from the rotating wafer W flows into space G2 formed between second collection cup 90 and third collection cup 100. Then, the processing liquid S is discharged to the outside from drainage port 51B formed on the downstream side of space G2.

[0145] In the seventh modification, analyzing unit 60B is disposed in space G2 formed between second collection cup 90 and third collection cup 100. This allows the concentration of components contained in processing liquid S to be detected during liquid processing in which DIW is supplied to wafer W from nozzle 41c.

[0146] Furthermore, in variant example 7, as shown in FIG. 12, when IPA is supplied to the wafer W from the nozzle 41b, the control unit 18 (see FIG. 1) moves the lift cup 101 and the lift rod 103 in addition to the lift cup 91 and the lift rod 93 to a given raised position.

[0147] As a result, processing liquid S splashed from the rotating wafer W flows into space G3 formed between third collection cup 100 and inner wall 110 located inside third collection cup 100. Then, processing liquid S is discharged to the outside from drain outlet 51C formed on the downstream side of space G3.

[0148] In the seventh modification, the analyzing unit 60C is disposed in the space G3 formed between the third collection cup 100 and the inner wall 110. This allows the concentration of components contained in the processing liquid S to be detected during the liquid processing in which IPA is supplied to the wafer W from the nozzle 41b.

[0149] As described above, in Modification 7, processing unit 16 is provided with a plurality of collection cups (here, first collection cup 80, second collection cup 90, and third collection cup 100) for receiving processing liquid S scattered from wafer W. A plurality of analyzing sections 60 are provided for each of these collection cups.

[0150] This makes it possible to detect the concentration of components contained in the processing liquid S in all liquid processing in the processing unit 16 in which a plurality of collection cups are provided for each of a plurality of types of chemical liquid.

[0151] In the example of Figures 10 to 12, an example is shown in which multiple analysis sections 60 (analysis sections 60A, 60B, 60C) are provided inside each of the first collection cup 80, second collection cup 90, and third collection cup 100, but the present disclosure is not limited to such an example.

[0152] For example, a plurality of analytical units 60 (analytical units 60A, 60B, 60C) may be provided downstream (i.e., in the discharge flow path) of drainage ports 51A, 51B, 51C connected to first collection cup 80, second collection cup 90, and third collection cup 100, respectively.

[0153] In addition, multiple liquid receiving sections 61 may be provided inside each of the first collection cup 80, the second collection cup 90, and the third collection cup 100, and the processing liquid S may be delivered from each liquid receiving section 61 to a measurement section 69 provided in a different location (i.e., a configuration similar to the example in Figure 9).

[0154] In addition, multiple liquid receiving sections 61 may be provided downstream of each of the drainage ports 51A, 51B, and 51C, and the treatment liquid S may be sent from each liquid receiving section 61 to a measurement section 69 provided in a different location (i.e., a configuration similar to the example in Figure 8).

[0155] 10 to 12 show an example in which three collection cups (first collection cup 80, second collection cup 90, and third collection cup 100) are provided in one processing unit 16, but the present disclosure is not limited to such an example. For example, two collection cups may be provided in one processing unit 16, or four or more collection cups may be provided in one processing unit 16.

[0156] <Variation 8> 13 is a schematic diagram showing an example of a specific configuration of a processing unit 16 according to Modification 8 of the embodiment. As shown in Fig. 13, Modification 8 is provided with, in addition to the analysis section 60 described in the above embodiment, another concentration sensor 62A that detects the component concentration of the processing liquid S (see Fig. 3) on the surface of the wafer W.

[0157] Concentration sensor 62A has a light-emitting unit 62a (see FIG. 3) and a light-receiving unit 62b (see FIG. 3) integrated together, and is disposed above wafer W held by holder 31. Concentration sensor 62A is supported by, for example, arm 42a or arm 42b (arm 42b in the drawing).

[0158] The concentration sensor 62A detects the component concentration of the processing liquid S on the surface of the wafer W by reflecting infrared light IR on the surface of the wafer W made of silicon.

[0159] In Modification 8, control unit 18 (see FIG. 1) may determine the end point of the liquid treatment based on the detection results of the component concentrations by concentration sensor 62 (see FIG. 3) provided in analysis unit 60 and the detection results of the component concentrations by concentration sensor 62A. This allows the end point of the liquid treatment to be determined with high accuracy.

[0160] The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a holding unit 31, a liquid supply unit 40, and an analysis unit 60. The holding unit 31 holds and rotates a substrate (wafer W). The liquid supply unit 40 supplies a processing liquid S to the substrate (wafer W). The analysis unit 60 analyzes the processing liquid S. The analysis unit 60 also includes a liquid receiving unit 61 and a concentration sensor 62. The liquid receiving unit 61 receives the processing liquid S flowing out from the substrate (wafer W). The concentration sensor 62 detects the concentration of components contained in the processing liquid S remaining in the liquid receiving unit 61. This makes it possible to accurately detect the concentration of components contained in the processing liquid S used in single-wafer processing of wafers W.

[0161] Moreover, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the liquid receiving section 61 has an inlet 63, an outlet 64, and a measurement section 65. The processing liquid S flowing out from the substrate (wafer W) flows into the inlet 63. The outlet 64 is located at a lower position than the inlet 63 and discharges the processing liquid S that accumulates inside. The measurement section 65 is located at a lower position than the inlet 63 and higher than the outlet 64, and the processing liquid S is measured by the concentration sensor 62. This makes it possible to continuously detect the component concentration of the processing liquid S flowing out from the wafer W over time during single-wafer processing of the wafer W.

[0162] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the sizes of the inlet 63 and the outlet 64 are set so that the processing liquid S always remains in the measurement portion 65 during the liquid processing of the substrate (wafer W). This allows the component concentrations of the processing liquid S to be continuously detected over time from the beginning to the end of the liquid processing of the wafer W.

[0163] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, a plurality of discharge ports 64 are provided in the liquid receiving section 61. This allows smooth detection of the time course of the component concentration of the processing liquid S flowing out from the wafer W during single wafer processing of the wafer W.

[0164] The substrate processing apparatus (substrate processing system 1) according to the embodiment also includes a collection cup 50 that receives processing liquid S scattered from the substrate (wafer W). Liquid receiving section 61 is provided on the outside of collection cup 50. This allows analysis section 60 to be installed without any problems even in a processing unit 16 that does not have any excess space in collection cup 50.

[0165] The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a holding unit 31, a liquid supply unit 40, and an analysis unit 60. The holding unit 31 holds and rotates a substrate (wafer W). The liquid supply unit 40 supplies a processing liquid S to the substrate (wafer W). The analysis unit 60 analyzes the processing liquid S. The analysis unit 60 also includes a liquid receiving unit 61, a liquid delivery pipe 68, and a concentration sensor 62. The liquid receiving unit 61 receives the processing liquid S flowing out from the substrate (wafer W). The liquid delivery pipe 68 delivers the processing liquid S from the liquid receiving unit 61 to a measurement unit 69. The concentration sensor 62 detects the concentration of a component contained in the processing liquid S in the measurement unit 69. This allows the concentration of a component contained in the processing liquid S used in single-wafer processing of wafers W to be accurately detected.

[0166] The substrate processing apparatus (substrate processing system 1) according to the embodiment also includes a collection cup 50 that receives the processing liquid S scattered from the substrate (wafer W). The liquid receiver 61 is provided in the collection cup 50. This allows the concentrations of components contained in the processing liquid S used in the single-wafer processing of the wafer W to be detected with high accuracy.

[0167] Furthermore, the substrate processing apparatus (substrate processing system 1) according to the embodiment includes a collection cup 50 that receives processing liquid S scattered from the substrate (wafer W), and a discharge flow path 53 that discharges processing liquid S from collection cup 50. Furthermore, liquid receiving section 61 is provided in discharge flow path 53. This allows analysis section 60 to be installed without any problems even in a processing unit 16 that does not have any excess space in collection cup 50.

[0168] Furthermore, the substrate processing apparatus (substrate processing system 1) according to this embodiment is equipped with a plurality of collection cups (first collection cup 80, second collection cup 90, and third collection cup 100) that receive processing liquid S splashed from the substrate (wafer W). A plurality of liquid receivers 61 are provided, one for each collection cup (first collection cup 80, second collection cup 90, and third collection cup 100). This allows the concentrations of components contained in processing liquid S to be detected in all liquid processes in processing unit 16, which is provided with a plurality of collection cups for each of a plurality of types of chemical liquid.

[0169] In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the concentration sensor 62 detects the concentration of the component by infrared spectroscopy, thereby enabling the concentration of the component contained in the processing liquid S flowing out from the wafer W to be detected accurately and simply.

[0170] In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the concentration sensor 62 detects the concentration of the component using a conductivity meter, thereby enabling the concentration of the component contained in the processing liquid S flowing out from the wafer W to be detected with high accuracy.

[0171] Furthermore, the substrate processing method according to the embodiment includes a determination process for determining a set processing time based on a measurement value of the concentration sensor 62 in a process of replacing a processing liquid on a substrate (wafer W) with a different processing liquid in the substrate processing apparatus (substrate processing system 1). This reduces the running cost of the liquid processing.

[0172] Furthermore, the substrate processing method according to the embodiment includes a determination process and a notification process in the substrate processing apparatus (substrate processing system 1) described above. The determination process determines whether or not the liquid processing has been completed normally based on the measurement value of concentration sensor 62. The notification process outputs an alarm to the outside if the liquid processing has not been completed normally. This allows the liquid processing of wafers W to be performed stably.

[0173] Furthermore, the substrate processing method according to the embodiment further includes a rescue process for rescuing a substrate (wafer W) that was the target of the liquid processing by using a rescue recipe when the liquid processing has not been completed normally, thereby improving the yield of wafers W.

[0174] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0175] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0176] W wafer (an example of a substrate) 1. Substrate processing system (an example of a substrate processing device) 16 Processing Unit 31 Holding part 40 Liquid supply section 50 Collection Cup 53 Discharge flow path 60 Analysis Department 61 Liquid receiving part 62 Concentration sensor 63 Inlet 64 Outlet 65 Part to be measured 68 Liquid delivery pipe 69 Part to be measured 80 First collection cup 90 Second collection cup 100 Third Collection Cup S processing solution

Claims

1. a holder that holds and rotates the substrate; a liquid supply unit for supplying a processing liquid to the substrate; an analysis unit for analyzing the treatment liquid; a recovery cup for receiving the processing liquid splashed from the substrate; Equipped with The analysis unit includes: a liquid receiving portion for receiving the processing liquid flowing out from the substrate; a concentration sensor for detecting a concentration of a component contained in the treatment liquid retained in the liquid receiving portion; having The liquid receiving portion is formed on the outer side of the side wall of the collection cup by using a part of the side wall. Substrate processing equipment.

2. The liquid receiving portion is an inlet into which the processing liquid flows out from the substrate; a discharge port that is disposed at a position lower than the inlet and that discharges the treatment liquid that has accumulated therein; a measurement part that is disposed at a position lower than the inlet and higher than the outlet, and in which the treatment liquid is measured by the concentration sensor; The substrate processing apparatus according to claim 1 , further comprising:

3. The sizes of the inlet and the outlet are set so that the processing liquid always remains in the measurement portion during liquid processing of the substrate. The substrate processing apparatus according to claim 2 .

4. The discharge port is provided in a plurality of portions in the liquid receiving portion. The substrate processing apparatus according to claim 2 .

5. The concentration sensor detects the concentration of the component by infrared spectroscopy. The substrate processing apparatus according to any one of claims 1 to 3.

6. The concentration sensor detects the concentration of the component using a conductivity meter. The substrate processing apparatus according to any one of claims 1 to 3.

7. A substrate processing apparatus comprising: a holding section which holds and rotates a substrate; a liquid supplying section which supplies a processing liquid to the substrate; and an analyzing section which analyzes the processing liquid, the analyzing section having a liquid receiving section which receives the processing liquid flowing out from the substrate; and a concentration sensor which detects a concentration of a component contained in the processing liquid remaining in the liquid receiving section, a determination process for determining whether or not the liquid processing has been completed normally based on a measurement value of the concentration sensor; a notification process that outputs an alarm when the liquid treatment is not completed normally; a rescue process for rescuing the substrate that was the subject of the liquid processing by a rescue recipe when the liquid processing is not normally completed; Including, The rescue recipe has a setting for inserting a predetermined delay time into a step following a step of replacing the processing liquid on the substrate with a different processing liquid. A method for processing a substrate.

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