Lightweight BES approximation

Abstract

To provide a data storage device to execute calibration operation of a read threshold value.SOLUTION: In a storage system 100, a data storage device including a memory device and a controller coupled to the memory device detects a page fewer than all pages of a representative word line when a calibration operation of a read threshold value is generated, as a result, obtains the read threshold value of the page fewer than all pages of the representative word line, and the obtained read threshold value and one or more physical conditions of the representative word line are provided to a model to obtain the other read threshold values for the remaining pages of the representative word line that were not detected. The model correlates the read threshold value of the page of the representative word line with the other pages of the same representative word lines and considers one or more physical conditions of the representative word line.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Patent Application No. 63 / 440,006, filed January 19, 2023, which is incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to data storage devices, such as solid state drives (SSDs) and iNAND storage devices, and more specifically to calibrating the read thresholds of memory devices of data storage devices. [Background technology]

[0003] During operation of a data storage device, the read threshold associated with the cell state of memory cells of the memory devices of the data storage device may shift. The read threshold shift may be caused by read disturb effects, read temperature, previous write temperature, temperature fluctuations, physical degradation of the memory cells, number of program / erase cycles, variation between die of the memory device, etc. A read threshold shift may degrade the quality of service (QoS) of the data storage device, for example, by returning invalid or corrupted data in response to a read request.

[0004] A read threshold calibration operation is performed to determine an optimized read threshold for the memory cells. The read threshold calibration operation may include a valley search and a bit error rate (BER) estimation scan (BES). The valley search may be performed by a process of searching for a valley in a cell voltage distribution (CVD) by measuring the difference of the conducting cells between different voltage points. In other words, the valley search searches for a minimum among the cell states. However, depending on the search parameters of the valley search operation, this minimum may be a local minimum rather than an absolute minimum. The BES operation may be performed by a process of applying multiple senses to a page of representative word lines and then sequentially calculating a syndrome weight (SW) as an estimate of the BER. In other words, the BES operation applies multiple sense operations with shifted read values ​​for each logical page of representative word lines. The BES operation applies an analytical algorithm to calculate an optimal shift of each read threshold for the page of representative word lines. Read threshold calibration is an expensive and time-consuming operation that can have a significant impact on latency and may be performed during idle time or when a read failure occurs.

[0005] Therefore, there is a need in the art for an improved read threshold calibration operation to reduce the latency and improve the quality of service of data storage devices. Summary of the Invention

[0006] The present disclosure relates generally to data storage devices, such as solid state drives (SSDs) and iNAND storage devices, and more particularly to calibrating read thresholds of memory devices of the data storage devices. The data storage device includes a memory device and a controller coupled to the memory device. When a read threshold calibration operation occurs, fewer than all pages of a representative word line are sensed, resulting in obtaining read thresholds of the fewer than all pages of the representative word line. The obtained read thresholds and one or more physical conditions of the representative word line are provided to a model to obtain other read thresholds of the remaining pages of the representative word line that were not sensed. The model correlates the read thresholds of one page of the representative word line with another page of the same representative word line and takes into account one or more physical conditions of the representative word line.

[0007] In one embodiment, a data storage device includes a memory device and a controller coupled to the memory device, wherein the controller is configured to perform a read threshold calibration operation on a first page of a plurality of pages of a representative word line of the memory device to obtain read thresholds of one or more cell states associated with the first page of the representative word line, determine one or more physical conditions of the representative word line, and generate, using a machine learning model, one or more other read thresholds of one or more other cell states associated with one or more other pages of the representative word line based on the read thresholds of the one or more cell states associated with the first page of the representative word line and the one or more physical conditions of the representative word line.

[0008] In another embodiment, a data storage device includes a memory device and a controller coupled to the memory device, the controller configured to: generate and update a model correlating read thresholds of one or more cell states of a first page of representative word lines with read thresholds of one or more other cell states of a second page of representative word lines, predict calibrated read thresholds of the cell states of the page of representative word lines based on the model, where a read threshold calibration operation is not performed on the page of representative word lines, and associate the predicted calibrated read thresholds of the cell states of the page of representative word lines with corresponding read thresholds of the cell states of the page of representative word lines.

[0009] In yet another embodiment, a data storage device includes a memory means and a controller coupled to the memory means, the controller configured to perform a read threshold calibration operation on fewer than all of a total number of pages of the plurality of pages of the representative word line and predict read thresholds of one or more cell states of remaining pages of the plurality of pages of the representative word line, the read threshold calibration operation not being performed on the remaining pages of the plurality of pages of the representative word line. [Brief description of the drawings]

[0010] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, can be understood by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure, and therefore are not to be considered as limiting the scope of the present disclosure, since the present disclosure may admit of other equally effective embodiments.

[0011] [Figure 1] 1 is a schematic block diagram illustrating a storage system in which a data storage device may act as a storage device for a host device, according to certain embodiments.

[0012] [Diagram 2] 1 is a graph illustrating threshold voltages of a triple level cell (TLC) memory in accordance with certain embodiments.

[0013] [Diagram 3] 4 is a simplified schematic diagram of a read threshold calibration operation for a representative word line in accordance with certain embodiments.

[0014] [Figure 4] 1 is a graph illustrating correlation between cell states of a TLC memory, according to certain embodiments.

[0015] [Diagram 5] FIG. 13 is a schematic diagram of an operation utilizing a machine learning (ML) model to predict read thresholds of one or more cell states corresponding to one or more other pages of a representative word line, according to certain embodiments.

[0016] [Figure 6] FIG. 1 illustrates an ML training operation, in accordance with certain embodiments.

[0017] [Figure 7A] 1 is a flow diagram illustrating a conventional method for calibrating the read threshold of a representative word line, in accordance with a particular embodiment.

[0018] [Figure 7B] FIG. 1 is a flow diagram illustrating a method for calibrating read thresholds by leveraging correlations between read thresholds of representative word line cell states, in accordance with certain embodiments.

[0019] For ease of understanding, the same reference numbers have been used, whenever possible, to designate identical elements that are common to the figures, and it is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific reference. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Reference will now be made to embodiments of the present disclosure. However, it should be understood that the present disclosure is not limited to the specifically described embodiments. Instead, any combination of the following features and elements, whether associated with different embodiments or not, is contemplated for implementing and practicing the present disclosure. Furthermore, the embodiments of the present disclosure may achieve other possible solutions and / or advantages over the prior art, but whether or not a particular advantage is achieved by a given embodiment does not limit the present disclosure. Thus, the following aspects, features, embodiments, and advantages are merely illustrative and are not considered elements or limitations of the appended claims unless expressly recited in the claims. Similarly, references to "the present disclosure" should not be construed as generalizing the subject matter disclosed herein, and are not considered elements or limitations of the appended claims unless expressly recited in the claims.

[0021] The present disclosure relates generally to data storage devices, such as solid state drives (SSDs) and iNAND storage devices, and more particularly to calibrating read thresholds of memory devices of the data storage devices. The data storage device includes a memory device and a controller coupled to the memory device. When a read threshold calibration operation occurs, fewer than all pages of a representative word line are sensed, resulting in obtaining read thresholds of the fewer than all pages of the representative word line. The obtained read thresholds and one or more physical conditions of the representative word line are provided to a model to obtain other read thresholds of the remaining pages of the representative word line that were not sensed. The model correlates the read thresholds of one page of the representative word line with another page of the same representative word line and takes into account one or more physical conditions of the representative word line.

[0022] 1 is a schematic block diagram illustrating a storage system 100 having a data storage device 106 that may function as a storage device for a host device 104, according to certain embodiments. For example, the host device 104 may utilize a non-volatile memory (NVM) 110 included in the data storage device 106 to store and retrieve data. The host device 104 includes a host DRAM 138. In some examples, the storage system 100 may include multiple storage devices, such as the data storage device 106, that may operate as a storage array. For example, the storage system 100 may include multiple data storage devices 106 configured as a Redundant Array of Inexpensive / Independent Disks (RAID) that collectively function as mass storage devices for the host device 104.

[0023] The host device 104 may store and / or retrieve data from one or more storage devices, such as data storage device 106. As shown in Figure 1, the host device 104 may communicate with the data storage device 106 via an interface 114. The host device 104 may include any of a variety of devices, including a computer server, a network attached storage (NAS) unit, a desktop computer, a notebook (i.e., laptop) computer, a tablet computer, a set-top box, a telephone handset such as a so-called "smart" phone, a so-called "smart" pad, a television, a camera, a display device, a digital media player, a video game console, a video streaming device, or any other device capable of receiving or transmitting data from a data storage device.

[0024] The host DRAM 138 may optionally include a host memory buffer (HMB) 150. The HMB 150 is a portion of the host DRAM 138 that is allocated to the data storage device 106 for exclusive use by the controller 108 of the data storage device 106. For example, the controller 108 may store mapping data, buffered commands, logical-to-physical (L2P) tables, metadata, and the like in the HMB 150. In other words, the HMB 150 may be used by the controller 108 to store data that would normally be stored in the internal memory of the controller 108, such as the volatile memory 112, the buffer 116, static random access memory (SRAM), and the like. In examples where the data storage device 106 does not include DRAM (i.e., the optional DRAM 118), the controller 108 may utilize the HMB 150 as the DRAM of the data storage device 106.

[0025] The data storage device 106 includes a controller 108, an NVM 110, a power supply 111, a volatile memory 112, an interface 114, a write buffer 116, and an optional DRAM 118. In some examples, the data storage device 106 may include additional components not shown in FIG. 1 for clarity. For example, the data storage device 106 may include a printed circuit board (PCB) to which the components of the data storage device 106 are mechanically attached and which includes conductive traces that electrically interconnect the components of the data storage device 106, etc. In some examples, the physical dimensions and connector configuration of the data storage device 106 may conform to one or more standard form factors. Some examples of standard form factors include, but are not limited to, a 3.5 inch data storage device (e.g., HDD or SSD), a 2.5 inch data storage device, a 1.8 inch data storage device, a peripheral component interconnect (PCI), a PCI expansion (PCI-X), a PCI Express (PCIe) (e.g., PCIe x1, x4, x8, x16, PCIe Mini Card, MiniPCI, etc.). In some examples, the data storage device 106 may be directly coupled to the motherboard of the host device 104 (eg, soldered or plugged directly into a connector).

[0026] The interface 114 may include one or both of a data bus for exchanging data with the host device 104 and a control bus for exchanging commands with the host device 104. The interface 114 may operate according to any suitable protocol. For example, the interface 114 may operate according to one or more of the following protocols: Advanced Technology Attachment (ATA) (e.g., Serial ATA (SATA) and Parallel ATA (PATA)), Fibre Channel Protocol (FCP), Small Computer System Interface (SCSI), Serial Attached SCSI (SAS), PCI and PCIe, Non-Volatile Memory Express (NVMe), OpenCAPI, GenZ, Cache Coherent Interface Accelerator (CCIX), Open Channel SSD (OCSSD), etc. The interface 114 (e.g., a data bus, a control bus, or both) is electrically connected to the controller 108 and provides an electrical connection between the host device 104 and the controller 108, allowing data to be exchanged between the host device 104 and the controller 108. In some examples, the electrical connection of interface 114 may also enable data storage device 106 to receive power from host device 104. For example, as shown in FIG. 1, power supply 111 may receive power from host device 104 via interface 114.

[0027] The NVM 110 may include multiple memory devices or memory units. The NVM 110 may be configured to store and / or retrieve data. For example, a memory unit of the NVM 110 may receive data and a message from the controller 108 instructing the memory unit to store the data. Similarly, the memory unit may receive a message from the controller 108 instructing the memory unit to retrieve the data. In some examples, each of the memory units may be referred to as a die. In some examples, the NVM 110 may include multiple dies (i.e., multiple memory units). In some examples, each memory unit may be configured to store a relatively large amount of data (e.g., 128MB, 256MB, 512MB, 1GB, 2GB, 4GB, 8GB, 16GB, 32GB, 64GB, 128GB, 256GB, 512GB, 1TB, etc.).

[0028] In some examples, each memory unit may include any type of non-volatile memory device, such as a flash memory device, a phase change memory (PCM) device, a resistive random access memory (ReRAM) device, a magnetoresistive random access memory (MRAM) device, a ferroelectric random access memory (F-RAM), a holographic memory device, and any other type of non-volatile memory device.

[0029] NVM 110 may include multiple flash memory devices or memory units. NVM flash memory devices may include NAND or NOR based flash memory devices and may store data based on the charge contained in the floating gate of the transistor of each flash memory cell. In an NVM flash memory device, the flash memory device may be divided into multiple dies, each of the multiple dies including multiple physical or logical blocks, which may be further divided into multiple pages. Each of the multiple blocks in a particular memory device may include multiple NVM cells. Multiple columns of NVM cells may be electrically connected using word lines to define one of multiple pages. Each cell in each of the multiple pages may be electrically connected to a respective bit line. Furthermore, the NVM flash memory device may be a 2D or 3D device and may be a single level cell (SLC), multi-level cell (MLC), triple level cell (TLC), or quad level cell (QLC). Controller 108 may write data to the NVM flash memory device at the page level, read data from the NVM flash memory device, and erase data from the NVM flash memory device at the block level.

[0030] The power source 111 may provide power to one or more components of the data storage device 106. When operating in a standard mode, the power source 111 may provide power to one or more components using power provided by an external device, such as the host device 104. For example, the power source 111 may provide power to one or more components using power received from the host device 104 via the interface 114. In some examples, the power source 111 may include one or more power storage components configured to provide power to one or more components when operating in a shutdown mode, such as when power is no longer received from the external device. In this manner, the power source 111 may function as an on-board backup power source. Some examples of the one or more power storage components include, but are not limited to, capacitors, supercapacitors, batteries, and the like. In some examples, the amount of power that can be stored by the one or more power storage components may be a function of the cost and / or size (e.g., area / volume) of the one or more power storage components. In other words, as the amount of power stored by the one or more power storage components increases, the cost and / or size of the one or more power storage components also increases.

[0031] The volatile memory 112 may be used by the controller 108 to store information. The volatile memory 112 may include one or more volatile memory devices. In some examples, the controller 108 may use the volatile memory 112 as a cache. For example, the controller 108 may store cached information in the volatile memory 112 until the cached information is written to the NVM 110. As shown in FIG. 1, the volatile memory 112 may consume power received from the power source 111. Examples of the volatile memory 112 include, but are not limited to, random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)). Similarly, the optional DRAM 118 may be utilized to store mapping data, buffered commands, logical-to-physical (L2P) tables, metadata, cached data, and the like in the optional DRAM 118. In some examples, the data storage device 106 is DRAM-less, as it does not include the optional DRAM 118. In other examples, the data storage device 106 includes the optional DRAM 118.

[0032] The controller 108 may manage one or more operations of the data storage device 106. For example, the controller 108 may manage reading data from and / or writing data to the NVM 110. In some embodiments, when the data storage device 106 receives a write command from the host device 104, the controller 108 may initiate a data storage command that stores data in the NVM 110 and monitor the progress of the data storage command. The controller 108 may determine at least one operating characteristic of the storage system 100 and store the at least one operating characteristic in the NVM 110. In some embodiments, when the data storage device 106 receives a write command from the host device 104, the controller 108 temporarily stores data associated with the write command in an internal memory or write buffer 116 before sending the data to the NVM 110.

[0033] The controller 108 may include an optional second volatile memory 120. The optional second volatile memory 120 may be similar to the volatile memory 112. For example, the optional second volatile memory 120 may be an SRAM. The controller 108 may allocate a portion of the optional second volatile memory to the host device 104 as a controller memory buffer (CMB) 122. The CMB 122 may be directly accessed by the host device 104. For example, rather than maintaining one or more submission queues within the host device 104, the host device 104 may utilize the CMB 122 to store one or more submission queues that are normally maintained within the host device 104. In other words, the host device 104 may generate commands and store the generated commands in the CMB 122 with or without associated data, where the controller 108 accesses the CMB 122 to retrieve the stored generated commands and / or associated data.

[0034] 2 is a graph 200 illustrating threshold voltages of a TLC memory, according to a particular embodiment. A TLC memory includes three bits, where each bit can have a program state of 0 or 1. A program state refers to the state of a memory cell, whether the memory cell is empty (i.e., no data is present) or programmed (i.e., data is present). Furthermore, the number of unique combinations of program states can be solved by the formula (total number of voltage levels)=2^(number of bits per memory cell). For a TLC memory, the number of voltage levels is 8, since 2^3=8.

[0035] As the number of bits in a memory cell increases, the memory cell can store more information, resulting in larger data storage. Furthermore, the formula for the unique combination of program states can be applied to SLC memory, TLC memory, QLC memory, Penta-Layer Cell (PLC) memory, and other memory densities.

[0036] Program state 0 refers to the programmed state, and program state 1 refers to the erased state. There are eight voltage levels in TLC memory, of which one is erased and seven are programmed. Moreover, the one voltage level that is erased has a bit combination of program state 111. For any memory cell, if the bit combination contains only program state 1, then this program state is the erased state (e.g., 1 for SLC, 11 for MLC, and 1111 for QLC). In FIG. 2, listed from the lowest threshold voltage represented by Vt on the X-axis to the highest threshold voltage, the voltage levels are 111 for cell state erased, 110 for cell state A, 100 for cell state B, 000 for cell state C, 010 for cell state D, 011 for cell state E, 001 for cell state F, and 101 for cell state G.

[0037] For TLC memory cells, each bit of the cell state (i.e., ###) corresponds to one of the upper, middle, and lower pages of the TLC memory cell. Additionally, the lines between the curves labeled VA, VB, VC, VD, VE, VF, and VG relate to threshold or reference voltages. For other memory cells, the number of threshold or reference voltages can be solved for as follows: (number of threshold or reference voltages)=(total number of voltage levels)-1. An individual page of data can be read by performing multiple comparisons at one or more threshold points to determine if the cell voltage is below or above the threshold. Each voltage curve represents a voltage distribution for a respective cell state. It should be understood that the cell state distribution curves are exemplary embodiments. Additionally, it should be understood that the tail of a voltage curve for a cell state can overlap with the head of a voltage curve for an adjacent cell state, and vice versa.

[0038] During operation of the data storage device, the threshold voltage curves may shift, resulting in a shift in the threshold voltage. In FIG. 2, the dashed curves labeled A*, B*, C*, D*, E*, F*, and G* illustrate memory cells with shifted read thresholds. The shift may be caused by read disturb effects, read temperature, previous write temperature, temperature variations, physical deterioration of the memory cell, number of program / erase cycles, variation between die of the memory device, etc. To account for the shifted read thresholds so that the read operation does not fail due to a significant number of bit errors, a read threshold calibration operation is performed on the word lines to calibrate the read thresholds of each cell state. The TLC memory includes a lower page (LP), a middle page (MP), and an upper page (UP). Each page may correspond to one or more cell states. For example, the LP of the TLC memory corresponds to cell state A and cell state E, the MP of the TLC memory corresponds to cell state B, cell state D, and cell state F, and the UP of the TLC memory corresponds to cell state C and cell state G.

[0039] To determine the read threshold for a particular page, one or more sense operations are performed for each of the corresponding cell states. For example, to determine the calibrated read threshold for the LP cell state of a TLC memory, one or more sense operations occur at each threshold boundary of cell state A, and one or more sense operations occur at each threshold boundary of cell state E. Similarly, to perform a read calibration operation for an entire word line, one or more sense operations are performed for each of the corresponding cell states.

[0040] FIG. 3 is a simplified schematic diagram of a read threshold calibration operation 300 for a representative word line, according to a particular embodiment. The representative word line may be a word line of a TLC memory in the NVM 110. In other words, the word line may have the threshold voltages shown in FIG. 2. For illustrative purposes, reference may be made herein to aspects of the storage system 100 of FIG. 1 and aspects of the graph 200 of FIG. 2. The representative word line may be a word line with a read failure or a word line triggered by a time and temperature update, which may be periodic or may be triggered by a time or temperature exceeding a respective threshold. If the representative word line has a read failure or is triggered by a time and temperature update, a read threshold calibration operation may be performed on the representative word line such that the read thresholds of each cell state of the representative word line are calibrated. Additionally, the read threshold calibration may be a BES operation, in a non-limiting example.

[0041] In step 302, the controller 108 performs a read threshold calibration operation on the LP of the representative word line. The read threshold calibration operation on the LP of the representative word line may provide optimized values ​​for thresholds of cell state A (cell state A* if cell state A shifts) and cell state E (cell state E* if cell state E shifts). In other words, the read threshold calibration operation detects an optimized read threshold for the corresponding cell state of each page. In step 304, the controller 108 performs a read threshold calibration operation on the MP of the representative word line. The read threshold calibration operation on the MP of the representative word line may provide optimized values ​​for thresholds of cell state B (cell state B* if cell state B shifts), cell state D (cell state D* if cell state D shifts), and cell state F (cell state F* if cell state F shifts). In step 306, the controller 108 performs a read threshold calibration operation on the UP of the representative word line. A read threshold calibration operation for a representative word line UP can provide optimized values ​​for the thresholds of cell state C (cell state C* if cell state C shifts) and cell state G (cell state G* if cell state G shifts).

[0042] FIG. 4 is a graph 400 illustrating the correlation between cell states of a TLC memory, according to certain embodiments. It should be understood that the correlation shown in graph 400 is also applicable to other memory architectures, such as MLC memory, QLC memory, etc. Empirical values ​​generated from the cross-correlation between read thresholds can be taken and input into a model to correlate threshold voltages between cell states of a representative word line. The correlation can be found along the diagonal of the curve of each matrix entry, where the higher the score, the higher the cross-correlation between the threshold voltages of the corresponding cell states. The score can be a correlation value generated by a model, which can be a machine learning (ML) model that allows the model to predict the read thresholds of other cell states of a representative word line.

[0043] In other words, by performing a read threshold calibration operation on a single page of a representative word line (or, in other embodiments, less than a full page of a representative word line), other read thresholds of other pages of the representative word line that are not associated with the read threshold calibration may be predicted. The predicted read thresholds are applied to corresponding cell states and used in subsequent read operations. Furthermore, because the read threshold calibration operation is performed on less than a full page of a representative word line, the calibration of the read thresholds for the full page of the representative word line may be faster than a previous read threshold operation that has been applied to the full page of the representative word line. It should be understood that the phrase "less than a full page" may refer to any number of pages that is less than the total number of pages. For example, in a QLC memory, "less than a full page" may be two pages.

[0044] 5 is a schematic diagram of an operation 500 for predicting read thresholds of one or more cell states corresponding to one or more other pages of a representative word line using an ML model, according to a particular embodiment. The representative word line may be a word line of a TLC memory in NVM 110. In other words, the word line may have the threshold voltages shown in FIG. 2. For purposes of illustration, reference may be made herein to aspects of storage system 100 of FIG. 1 and aspects of graph 200 of FIG. 2.

[0045] In block 502, the controller 108 performs a read threshold calibration operation, which may be a BES operation, on the UP of the representative word line. In block 504, optimized read thresholds for cell state C and cell state G are found. In block 506, the optimized read thresholds for cell state C and cell state G are provided to the ML model, where the ML model utilizes the correlation of the read thresholds of the one or more cell states of the page of the representative word line to predict the read thresholds of one or more cell states of another page of the representative word line. Furthermore, one or more physical conditions may be provided to the ML model in block 506 to better calibrate or adjust the model to provide more accurate results. For example, the one or more physical conditions may be the temperature of the representative word line, the program / erase count of the representative word line, the BER of the representative word line, etc. The one or more physical conditions may shift the read thresholds of various cell states of the representative word line. Thus, using the one or more physical conditions and the optimized read thresholds found from the read threshold calibration operation in block 502, the ML model may be able to predict optimized read thresholds for other cell states of the representative word line.

[0046] It should be understood that the ML model may utilize the received one or more physical conditions and the received optimized read threshold to further optimize the model for better results. The training of the ML model may be completed offline by supervised training using lab data or other parameters. For example, random forest, XGBoost, CatBoost, and neural networks may be utilized to train and model the read threshold of memory cells of the NVM 110. Similarly, the training of the ML model may be based on unsupervised clustering of read threshold levels using clustering methods such as Kmeans and Gaussian clustering. In a non-limiting example, clustering state thresholds of two or three groups may determine which logical pages to measure using a read threshold calibration operation such as BES. It should be understood that the training method referenced above is not intended to be limiting, but rather to provide an example of a possible embodiment. Furthermore, it should be understood that the controller 108 may decide to perform a conventional read threshold calibration operation rather than predicting the read threshold based on the ML model. This decision may be based on a function of the success rate of the ML model in different conditions. For example, if the controller is operating under environmental conditions and workloads for which it is not well trained, more conventional read threshold calibration operations may be utilized to calibrate the read thresholds of representative word lines, however, if the controller is operating under environmental conditions and workloads for which it is well trained, more predictive operations using the ML model may be performed.

[0047] In block 508, the ML model provides optimized read thresholds for MP corresponding to cell state B, cell state D, and cell state F. Similarly, in block 510, the ML model provides optimized read thresholds for LP corresponding to cell state A and cell state E. The controller 108 may associate the UP, MP, and LP read thresholds with the representative word lines such that the calibrated read thresholds are used when reading the representative word lines.

[0048] 6 illustrates an ML training operation 600 for a TLC memory, according to a particular embodiment. The ML training operation 600 includes a decision tree 602, in which one or more physical conditions of a representative word line and a calibrated read threshold of a page of a plurality of pages of the representative word line are input to the decision tree 602. In the ML training operation 600, the calibrated read threshold of the MP of the representative word line, obtained by a read threshold calibration operation, such as a BES operation, is provided to the decision tree 602. The decision tree 602 predicts an optimized read threshold for cell state E using an ML model that correlates the read threshold of the page of the representative word line with the read threshold of another page of the representative word line.

[0049] 7A is a flow diagram illustrating a conventional method 700 for calibrating the read threshold of an exemplary word line, according to a particular embodiment. For illustrative purposes, reference may be made herein to aspects of the storage system 100 of FIG. 1 and aspects of the graph 200 of FIG. 2. The method 750 may be performed by the controller 108.

[0050] In block 702, a time tag update is initiated. In another example, the conventional method 700 may be triggered by the occurrence of a read failure. It should be understood that the read threshold calibration operation may be triggered by other operations not listed. In block 704, a read threshold calibration operation is performed on the LP of a representative word line (WL), where the representative WL is a TLC memory. In block 706, a read threshold calibration operation is performed on the MP of the representative WL. In block 708, a read threshold calibration operation is performed on the UP of the representative WL. In block 710, the time tag update is completed.

[0051] 7B is a flow diagram illustrating a method 750 for calibrating read thresholds by leveraging correlations between read thresholds of cell states of representative word lines, according to certain embodiments. For illustrative purposes, reference may be made herein to aspects of the storage system 100 of FIG. 1 and aspects of the graph 200 of FIG. 2. The method 750 may be performed by the controller 108.

[0052] In block 752, the time tag update is initiated. In another example, the method 750 may be triggered by the occurrence of a read failure. It should be understood that the read threshold calibration operation may be triggered by other operations not listed. In block 754, a read threshold calibration operation is performed on the MP of the representative WL, where the representative WL is a TLC memory. In block 756, the controller 108 predicts the read threshold of other pages (i.e., the LP and UP of the representative WL) using the model, where the model may be an ML model. The read threshold of the MP representative WL is provided to the model along with one or more physical conditions of the representative WL. The model predicts the read threshold of other pages (i.e., the LP and UP of the representative WL) based on the correlation value of the model, the one or more physical conditions of the representative WL, and the read threshold of the MP of the representative WL. In block 758, the time tag update is completed.

[0053] By utilizing a model that correlates the read threshold of a page with another page of a representative word line and takes into account one or more physical conditions of the representative word line, the read threshold calibration operation for the representative word line may be completed faster, thereby improving the performance of the data storage device.

[0054] In one embodiment, a data storage device includes a memory device and a controller coupled to the memory device, wherein the controller is configured to perform a read threshold calibration operation on a first page of a plurality of pages of a representative word line of the memory device to obtain read thresholds of one or more cell states associated with the first page of the representative word line, determine one or more physical conditions of the representative word line, and generate, using a machine learning model, one or more other read thresholds of one or more other cell states associated with one or more other pages of the representative word line based on the read thresholds of the one or more cell states associated with the first page of the representative word line and the one or more physical conditions of the representative word line.

[0055] The read threshold calibration operation is not performed on the one or more other pages of the representative word line. The machine learning model correlates the read threshold of the one or more cell states associated with the first page of the representative word line with one or more other read thresholds of the one or more other cell states associated with the one or more other pages of the representative word line. The generating includes inputting the read threshold of the one or more cell states associated with the first page of the representative word line and one or more physical conditions of the representative word line into the machine learning model. The one or more physical conditions of the representative word line include a temperature, a number of program / erase cycles, and a bit error rate. The representative word line is a multi-level cell (MLC) memory, a triple-level cell (TLC) memory, or a quad-level cell (QLC) memory. The machine learning model is trained offline using supervised training. The machine learning model is trained based on unsupervised clustering of the read threshold levels using a clustering method. The controller is further configured to apply the generated one or more other read thresholds of the one or more other cell states associated with the one or more other pages of the representative word line to one or more other cell states associated with the one or more other pages of the representative word line. The controller is further configured to determine a workload associated with the representative word line, determine that either the workload associated with the representative word line or one or more physical conditions of the representative word line do not conform to the machine learning model, and in response to a determination that either the workload associated with the representative word line or one or more physical conditions of the representative word line do not conform to the machine learning model, perform read threshold calibration and one or more other read thresholds for one or more other cell states associated with one or more other pages of the representative word line.Using the machine learning model to generate one or more other read thresholds for one or more other cell states associated with one or more other pages of the representative word line occurs when both the workload associated with the representative word line and one or more physical conditions of the representative word line are matched to the machine learning model.

[0056] In another embodiment, a data storage device includes a memory device and a controller coupled to the memory device, the controller configured to: generate and update a model correlating read thresholds of one or more cell states of a first page of representative word lines with read thresholds of one or more other cell states of a second page of representative word lines, predict calibrated read thresholds of the cell states of the page of representative word lines based on the model, where a read threshold calibration operation is not performed on the page of representative word lines, and associate the predicted calibrated read thresholds of the cell states of the page of representative word lines with corresponding read thresholds of the cell states of the page of representative word lines.

[0057] The model is a machine learning model. The predicted calibrated read threshold of the cell state of the page of the representative word line is predicted utilizing read thresholds of one or more cell states associated with another page of the representative word line obtained using read threshold calibration. The prediction further utilizes one or more physical conditions of the representative word line. The one or more physical conditions of the representative word line include temperature, number of program / erase cycles, and bit error rate. In the case of a quad-level cell (QLC) memory, the prediction further utilizes read thresholds of one or more cell states associated with another page of the representative word line obtained using read threshold calibration. The controller is further configured to keep a record of a success rate of predicting the calibrated read threshold of the cell state of the page of the representative word line utilizing the model, and to use the model to predict the calibrated read threshold of the cell state of the page of the representative word line or to perform a read calibration operation to obtain the calibrated read threshold of the cell state of the page. The prediction occurs if the success rate is equal to or greater than a threshold. The execution of the read calibration operation occurs if the success rate is less than a threshold.

[0058] In another embodiment, a data storage device includes a memory means and a controller coupled to the memory means, the controller configured to perform a read threshold calibration operation on fewer than all of a total number of pages of the plurality of pages of the representative word line and predict read thresholds of one or more cell states of remaining pages of the plurality of pages of the representative word line, the read threshold calibration operation not being performed on the remaining pages of the plurality of pages of the representative word line.

[0059] The controller is further configured to utilize the read thresholds of the one or more cell states of the remaining pages of the plurality of pages of the representative word line predicted as calibrated read thresholds of the one or more cell states of the remaining pages of the plurality of pages of the representative word line, the prediction utilizing a machine learning model that correlates read thresholds of the one or more cell states associated with fewer than all of the total number of pages of the plurality of pages of the representative word line with read thresholds of the one or more cell states of the remaining pages of the plurality of pages of the representative word line.

[0060] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, which is determined by the claims.

Claims

1. A memory device; a controller coupled to the memory device, the controller comprising: performing a read threshold calibration operation on a first page of a plurality of pages of a representative word line of the memory device to obtain read thresholds of one or more cell states associated with the first page of the representative word line; determining one or more physical conditions of the representative word lines; and configured to generate, using a machine learning model, one or more other read thresholds for one or more other cell states associated with one or more other pages of the representative word line based on the read thresholds of the one or more cell states associated with the first page of the representative word line and the one or more physical conditions of the representative word line. Data storage device.

2. The data storage device of claim 1 , wherein the read threshold calibration operation is not performed on the one or more other pages of the representative word line.

3. 2. The data storage device of claim 1, wherein the machine learning model correlates the read thresholds of the one or more cell states associated with the first page of the representative word line with the one or more other read thresholds of the one or more other cell states associated with the one or more other pages of the representative word line.

4. The data storage device of claim 1 , wherein the generating comprises inputting the read thresholds of the one or more cell states associated with the first page of the representative word line and the one or more physical conditions of the representative word line into the machine learning model.

5. The one or more physical conditions of the representative word line include: temperature, Number of program / erase cycles, and Including bit error rate, The data storage device according to claim 1 .

6. 2. The data storage device of claim 1, wherein the representative word line is a multi-level cell (MLC) memory, a triple level cell (TLC) memory, or a quad level cell (QLC) memory.

7. The data storage device of claim 1 , wherein the machine learning model is trained offline using supervised training.

8. The data storage device of claim 1 , wherein the machine learning model is trained based on unsupervised clustering of read threshold levels using a clustering method.

9. 2. The data storage device of claim 1, wherein the controller is further configured to apply the one or more other read thresholds of the one or more other cell states associated with the one or more other pages of the representative word line generated to the one or more other cell states associated with the one or more other pages of the representative word line.

10. The controller further comprises: determining a workload associated with the representative word line; determining that either the workload associated with the representative word lines or the one or more physical conditions of the representative word lines are not compatible with the machine learning model; configured to perform the read threshold calibration in response to determining that either the workload associated with the representative word line or the one or more physical conditions of the representative word line do not match the machine learning model, the one or more other read thresholds of the one or more other cell states associated with the one or more other pages of the representative word line; generating the one or more other read thresholds for the one or more other cell states associated with the one or more other pages of the representative word line using the machine learning model occurs when both the workload associated with the representative word line and the one or more physical conditions of the representative word line are compatible with the machine learning model. The data storage device according to claim 1 .

11. A memory device; a controller coupled to the memory device, the controller comprising: generating and updating a machine learning model that correlates read thresholds of one or more cell states of a first page of representative word lines with read thresholds of one or more other cell states of a second page of the representative word lines; predicting a calibrated read threshold of a cell state of the page of the representative word line based on the machine learning model, wherein a read threshold calibration operation is not performed on the page of the representative word line; correlating the predicted calibrated read thresholds of the cell states of the page of the representative word lines with corresponding read thresholds of the cell states of the page of the representative word lines. Data storage device.

12. 12. The data storage device of claim 11, wherein the predicted calibrated read threshold of the cell state of the page of the representative word line is predicted using read thresholds of one or more cell states associated with another page of the representative word line obtained using the read threshold calibration.

13. the prediction further utilizing one or more physical conditions of the representative word lines; The one or more physical conditions of the representative word line include: temperature, Number of program / erase cycles, and Including bit error rate, The data storage device according to claim 12.

14. 13. The data storage device of claim 12, wherein in the case of a quad level cell (QLC) memory, the prediction further utilizes read thresholds of one or more cell states associated with another page of the representative word line obtained using the read threshold calibration.

15. The controller further comprises: maintaining a record of the success rate of using the machine learning model to predict calibrated read thresholds of cell states of the representative word line pages; and using the machine learning model to predict the calibrated read thresholds of the cell states of the page of the representative word lines; or configured to perform the read calibration operation to obtain the calibrated read thresholds of the cell states of the page. The data storage device according to claim 11.

16. the prediction occurs if the success rate is greater than or equal to a threshold; the performing of the read calibration operation occurs if the success rate is less than the threshold.

16. The data storage device of claim 15.

17. A memory device; a controller coupled to the memory device, the controller comprising: generating and updating a model correlating read thresholds of one or more cell states of a first page of representative word lines with read thresholds of one or more other cell states of a second page of said representative word lines; predicting a calibrated read threshold of a cell state of the page of the representative word line based on the model, wherein a read threshold calibration operation is not performed on the page of the representative word line; correlating the predicted calibrated read thresholds of the cell states of the page of the representative word lines with corresponding read thresholds of the cell states of the page of the representative word lines; The controller further comprises: maintaining a record of the success rate of using the model to predict calibrated read thresholds of cell states of the representative word line pages; and using the model to predict the calibrated read thresholds of the cell states of the page of the representative word lines; or configured to perform the read calibration operation to obtain the calibrated read thresholds of the cell states of the page. Data storage device.

18. A memory means; a controller coupled to said memory means, said controller comprising: performing a read threshold calibration operation on less than all of the total number of pages of the plurality of pages of the representative word line; configured to predict read thresholds of one or more cell states of a remaining page of the plurality of pages of the representative word line, the read threshold calibration operation being configured not to be performed on the remaining page of the plurality of pages of the representative word line; the prediction utilizes a machine learning model that correlates read thresholds of one or more cell states associated with less than all of a total number of pages of a plurality of pages of a representative word line with the read thresholds of the one or more cell states of the remaining pages of the plurality of pages of the representative word line. Data storage device.

19. 20. The data storage device of claim 18, wherein the controller is further configured to utilize the predicted read thresholds of the one or more cell states of the remaining pages of the plurality of pages of the representative word line as calibrated read thresholds of the one or more cell states of the remaining pages of the plurality of pages of the representative word line.

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