Film forming apparatus and film forming method

Abstract

To provide a film deposition apparatus and a film deposition method, capable of promoting moisture removal in a chamber without causing complication of the apparatus.SOLUTION: A control part 80 of a film deposition apparatus 1 rotates a turntable 30 for holding work piece W and circularly conveying the workpiece W by a circumferential track L without holding the workpiece W and applies a voltage to a target 412 including yttrium as a film deposition material in a film deposition process part 40 in a state of rotating the turntable 30 without holding the workpiece W. The application of the voltage beats yttrium particles toward the turntable 30 without holding the workpiece W and deposits a yttrium film on the turntable 30 or a structure, such as a tray 60 installed on the turntable 30 to form a getter material circularly conveyed in the chamber 10.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus and a film forming method. [Background technology]

[0002] In the manufacturing process of various products such as semiconductor devices, liquid crystal displays, organic EL displays, and optical disks, a thin film such as an optical film may be formed on a workpiece such as a wafer or glass substrate. A thin film can be formed by a film formation process in which a metal film or the like is formed on the workpiece, or by a film treatment such as etching, oxidation, or nitridation of the formed film.

[0003] Film formation or film processing can be performed in various ways, one of which is to generate plasma in a chamber decompressed to a certain degree of vacuum and use the plasma to perform processing. In film formation, an inert gas is introduced into a chamber in which a target made of film formation material is placed, and a direct current voltage is applied to the target. Ions of the inert gas that has been made into plasma are collided with the target, and the film formation material that has been knocked out from the target is deposited on the workpiece to form a film. This type of film formation is called sputtering. In film processing, a process gas is introduced into a vacuum chamber in which an electrode is placed, and a high-frequency voltage is applied to the electrode. Active species such as ions and radicals of the process gas that has been made into plasma are collided with the film on the workpiece.

[0004] In order to perform such film formation and film processing consecutively, there is a film formation apparatus in which a rotating table, which is a rotating body, is installed inside one chamber, and multiple film formation processing sections and film processing sections are arranged in the circumferential direction above the rotating table. The film formation processing sections and film processing sections are each arranged in separate compartments within the chamber, and a thin film such as an optical film is formed on the workpiece by passing the workpiece held on the rotating table directly under the film formation processing section and film processing section.

[0005] As the film formation process continues, the film formation material scattered from the film formation unit accumulates in various locations in the chamber of the film formation apparatus as described above. If the deposited film formation material peels off, the workpiece on which the film is to be formed will be contaminated. However, if the film adheres directly to the inner wall of the chamber or the rotating table, it is very difficult to remove it. For this reason, a protective plate is provided in a detachable manner so as to cover the inner wall of the chamber, the surface of the rotating table, etc. The protective plate prevents the film formation material scattered during the film formation process from adhering to the inner wall of the chamber or the surface of the rotating table.

[0006] Such an adhesion prevention plate needs to be removed and cleaned (for maintenance) after continuous film formation processing to prevent the attached film from peeling off and contaminating the workpiece. For example, the chamber is opened to the atmosphere, the adhesion prevention plate is removed from the chamber, the film deposited on the surface is removed by sandblasting, and then it is washed with pure water. After cleaning and drying, it is transported to the film formation device in a vacuum-packed state, opened, and attached to the film formation device again for film formation. This is because moisture remains inside the adhesion prevention plate after cleaning and drying when it is attached, and a large amount of moisture continues to be generated from the adhesion prevention plate as the pressure inside the chamber is reduced.

[0007] Moisture can enter the chamber for a variety of reasons, including but not limited to the above. For example, when the chamber is opened to the atmosphere for maintenance or the like, moisture contained in the atmosphere is adsorbed onto the walls and various members inside the chamber. Moisture may also adhere to items brought into the chamber, such as workpieces and trays that hold the workpieces.

[0008] The moisture gradually evaporates and is exhausted by reducing the pressure inside the chamber, so this condition improves as film formation continues. However, the number and area of ​​the components that contain moisture, including the adhesion prevention plate installed in the chamber, are very large, so the amount of moisture generated is also large. For this reason, it is difficult to completely remove the moisture in a short time and obtain the vacuum level required for processing. For example, it may take several days to several weeks to reach a state suitable for film formation. As a result, after the chamber is opened to the atmosphere for maintenance or after the adhesion prevention plate is replaced, a long period of time will continue during which film formation is not possible, resulting in reduced productivity.

[0009] To address this issue, a method has been proposed in which a heating device such as an infrared lamp is installed inside the chamber (Patent Document 1), and a method has been proposed in which heated gas is introduced to heat the components inside the chamber and promote the evaporation of moisture (Patent Document 2). [Prior art documents] [Patent documents]

[0010] [Patent Document 1] JP 2005-352018 A [Patent Document 2] JP 2010-225847 A Summary of the Invention [Problem to be solved by the invention]

[0011] The manufacturing process of electronic devices includes a process using a plasma processing apparatus that uses plasma or highly corrosive fluorine-based gas, such as dry etching. In order to protect the inside of a chamber in which electronic devices are manufactured from damage caused by plasma and corrosion caused by fluorine-based gas, a method is used in which a film of yttrium oxide (Y2O3), also known as yttria, is formed on the members of the plasma processing apparatus, such as the inner walls of the chamber and the electrodes.

[0012] In order to coat a member of a plasma processing apparatus with an yttria film, it is being considered to use a film forming apparatus in which a target containing yttrium is disposed. That is, it is being considered to form an yttrium film on the surface of the member by forming an yttrium film on the member of the plasma processing apparatus by sputtering, and then colliding oxygen atoms with the yttrium film on the member to oxidize it.

[0013] Here, when forming a film by sputtering, the atmosphere in the chamber of the film forming apparatus is depressurized to a high vacuum range. This reduces the impurities present in the chamber and reduces the gas molecules so that the mean free path is large. As a result, the film forming material that is knocked out from the target reaches the workpiece, and a stable and dense film is obtained. However, if moisture remains in the chamber of the film forming apparatus, the degree of vacuum in the chamber does not increase, and there is a risk that a dense film cannot be obtained. This may deteriorate the corrosion resistance required for a coating film of a member of a plasma processing apparatus.

[0014] The method of providing a heating device as disclosed in Patent Document 1 and the method of introducing heated gas as disclosed in Patent Document 2 require providing a heating device for each of the multiple processing chambers in the film formation apparatus or introducing heated inert gas, which complicates the apparatus configuration and increases costs, and is therefore not practical.

[0015] The present invention has been proposed to solve the above-mentioned problems, and aims to provide a film formation apparatus and a film formation method that can promote the removal of moisture from within a chamber without complicating the apparatus. [Means for solving the problem]

[0016] In order to achieve the above object, the film forming apparatus of this embodiment includes a chamber capable of evacuating the inside thereof, a rotating table provided within the chamber, holding a workpiece and circulating and transporting the workpiece in a circular trajectory, a target made of a film forming material containing yttrium, a plasma generator that applies a voltage to the target and turns a sputtering gas introduced between the target and the rotating table into plasma, and a film forming processing section that knocks yttrium particles from the target toward the rotating table and deposits a yttrium film on the workpiece held on the rotating table, an oxygen gas introduction section that introduces oxygen gas, and a film processing section that has a plasma generator that turns the oxygen gas into plasma and oxidizes the yttrium film deposited on the workpiece, and a control section that controls the operation of the rotating table, the film forming processing section, and the film processing section, and the control section rotates the rotating table in a state in which the workpiece is not held, applies a voltage to the target, and knocks yttrium particles toward the rotating table on which the workpiece is not held.

[0017] The film formation method of the present invention is a film formation method using a film formation apparatus including a chamber capable of evacuating the inside, a rotating table provided in the chamber, holding a workpiece and circulating and transporting the workpiece in a circular trajectory, a target made of a film formation material containing yttrium, a plasma generator that applies a voltage to the target and turns a sputtering gas introduced between the target and the rotating table into plasma, and knocks out yttrium particles from the target toward the workpiece being circulated and transported by the rotating table, thereby forming a yttrium film on the workpiece, and an oxygen gas introduction section that introduces oxygen gas, and a film processing section that has a plasma generator that turns the oxygen gas into plasma and oxidizes the formed yttrium film, characterized in that the rotating table is rotated in a state where the workpiece is not held, a voltage is applied to the target, and the yttrium particles are knocked out toward the rotating table where the workpiece is not held. Effect of the Invention

[0018] According to the present invention, it is possible to provide a film forming apparatus and a film forming method that can promote the removal of moisture from within a chamber without complicating the apparatus. [Brief description of the drawings]

[0019] [Figure 1] 1 is a perspective plan view showing a schematic configuration of a film forming apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a cross-sectional view taken along the line AA in FIG. 1, showing in detail the internal configuration of the film forming apparatus according to the embodiment of FIG. 1 as viewed from the side. [Diagram 3] FIG. 2 is a plan view showing a tray during production of a getter material. [Figure 4] 1 is a flowchart of a film forming operation for producing a getter material. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] The embodiments of the film forming apparatus and the film forming method according to the present invention will be described in detail with reference to the drawings. In each drawing, thickness, dimensions, positional relationship, ratio, shape, etc. may be emphasized in order to facilitate understanding, but the present invention is not limited to such emphasis.

[0021] (composition) As shown in the perspective plan view of the film forming apparatus 1 in Fig. 1 and the cross-sectional view in Fig. 2, the film forming apparatus 1 is an apparatus that forms an yttria film on a workpiece W by sputtering. The workpiece W refers to a processing object whose surface is protected by an yttria film because it is exposed to plasma or corrosive gas such as a fluorine-based gas, and examples of such objects include the inner wall of a chamber in which dry etching of an electronic device is performed. However, the workpiece W can be anything, regardless of its shape or material, as long as it is an object on which an yttria film is to be formed.

[0022] This film formation apparatus 1 has a chamber 10, a turntable 30, a film formation processing section 40, a film processing section 50, a transfer chamber 70, and a control section 80. An exhaust section 20 is connected to the chamber 10, a tray 60 is detachably installed on the turntable 30, and a load lock section 71 is connected to the transfer chamber 70.

[0023] The chamber 10 is a cylindrical container whose interior can be evacuated, and is formed by a disk-shaped ceiling 10a, a disk-shaped inner bottom surface 10b, and an annular inner peripheral surface 10c. An exhaust unit 20 is connected to the chamber 10. The exhaust unit 20 has piping, a pump, a valve, etc. (not shown). By exhausting the air through the exhaust unit 20, the pressure inside the chamber 10 is reduced to create a vacuum.

[0024] The rotating table 30 is a transport means for transporting the workpiece W on its upper surface along a circular trajectory L, and is disposed in a cylindrical space secured in the inner bottom surface 10b of the chamber 10. The rotating table 30 has a disk shape extending concentrically with the chamber 10, and extends widely within the chamber 10 so as not to come into contact with the inner peripheral surface 10c. The rotating table 30 is supported by a motor 31, and rotates continuously at a predetermined rotational speed with the circular center of the rotating table 30 as the rotation axis.

[0025] The turntable 30 is made of metal, and may be, for example, a stainless steel plate member with aluminum oxide sprayed on its surface. A plurality of holding parts 32 are arranged at equal circumferential positions on the upper surface of the turntable 30. The holding parts 32 are grooves, holes, protrusions, jigs, holders, etc., and hold the trays 60 carrying the workpieces W by a mechanical chuck, an adhesive chuck, etc. For example, six trays 60 are arranged on the turntable 30 at intervals of 60°. However, the number of workpieces W and trays 60 transported simultaneously is not limited to this. The trays 60 carrying the workpieces W are carried in from the transfer chamber 70 and installed on the turntable 30.

[0026] The transfer chamber 70 is a passageway in which the tray 60 holding the workpieces W is accommodated before being carried into the chamber 10. The transfer chamber 70 is connected to the chamber 10 via a gate valve GV1. A transport means (not shown) is provided in the internal space of the transfer chamber 70 for carrying the workpieces W in and out of the chamber 10. The transfer chamber 70 is depressurized by exhaust from a vacuum pump (not shown), and while the vacuum of the chamber 10 is maintained by the transport means, the tray 60 carrying the unprocessed workpieces W is carried into the chamber 10, and the tray 60 carrying the processed workpieces W is carried out of the chamber 10.

[0027] A load lock unit 71 is connected to the transfer chamber 70 via a gate valve GV2. The load lock unit 71 is a device that, while maintaining the vacuum of the transfer chamber 70, transfers the tray 60 carrying the unprocessed workpiece W from the outside into the transfer chamber 70 by a transport means (not shown) and transfers the tray 60 carrying the processed workpiece W out of the transfer chamber 70. The load lock unit 71 is depressurized by exhaust from a vacuum pump (not shown). The workpiece W placed on the turntable 30 from the transfer chamber 70 passes through the film forming unit 40 and the film processing unit 50 along a circular locus L as the turntable 30 rotates.

[0028] The film forming processing units 40 are arranged at three locations along the circular locus L. Each film forming processing unit 40 generates plasma and exposes the target 412 to the plasma. As a result, the film forming processing unit 40 causes ions contained in the plasma to collide with the target 412, and deposits particles knocked out of the target 412 on the workpiece W to form a film. The film forming processing unit 40 includes a sputtering source including the target 412, a backing plate 413, and an electrode 414, and a plasma generator including a power supply unit 416 and a sputtering gas introduction unit 419.

[0029] The target 412 is a plate-like member made of a film forming material containing yttrium. The targets 412 are provided at a distance from each other on a circular trajectory L along which the workpiece W is transported. The surface of the target 412 is supported by the ceiling 10a of the chamber 10 so as to face the workpiece W placed on the rotary table 30. Three targets 412 are provided at positions aligned on the vertices of a triangle in a plan view.

[0030] The backing plate 413 is a support member that holds the targets 412. This backing plate 413 holds each target 412 individually. The electrode 414 is a conductive member for applying power to each target 412 individually from outside the chamber 10, and is electrically connected to the targets 412. The power applied to each target 412 can be changed individually. In addition, the sputtering source is appropriately equipped with a magnet, a cooling mechanism, etc. as necessary.

[0031] The power supply unit 416 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 414. The power supply unit 416 applies a voltage to the target 412 through the electrode 414. The rotary table 30 has the same potential as the grounded chamber 10, and a potential difference occurs by applying a high voltage to the target 412 side. The power supply unit 416 can also be an RF power supply to perform high-frequency sputtering.

[0032] The sputtering gas introduction unit 419 introduces the sputtering gas G1 into the chamber 10. The sputtering gas introduction unit 419 has a supply source of the sputtering gas G1 such as a cylinder (not shown), a pipe 418, and a gas introduction port 417. The pipe 418 is connected to the supply source of the sputtering gas G1, airtightly penetrates the chamber 10, extends into the inside of the chamber 10, and has an end opening as a gas introduction port 417. The gas introduction port 417 opens between the turntable 30 and the target 412, and introduces the sputtering gas G1 for film formation into the processing space 41 formed between the turntable 30 and the target 412. A rare gas can be used as the sputtering gas G1, and argon (Ar) gas or the like is preferable.

[0033] In the film forming processing unit 40, the sputtering gas G1 is introduced from the sputtering gas introduction unit 419, and the power supply unit 416 applies a high voltage to the target 412 through the electrode 414. Then, the sputtering gas G1 introduced into the processing space 41 is turned into plasma, and active species such as ions are generated. The ions in the plasma collide with the target 412 and knock out yttrium particles of the film forming material. The yttrium particles knocked out from the target 412 are deposited on the workpiece W when the workpiece W passes directly under the film forming processing unit 40 as the turntable 30 rotates. As a result, a film made of yttrium particles is formed on the workpiece W. The workpiece W is circulated and transported by the turntable 30, and the film forming processing is performed by repeatedly passing through the film forming processing unit 40.

[0034] The processing space 41 of each film forming processing unit 40 is surrounded by a box-type shield member 11 in which holes for the target 412 are formed, and the box-type shield member 11 suppresses the diffusion of the film forming material and the sputtering gas G1 into the chamber 10. The box-type shield member 11 is an annular sector box with a ceiling made of an annular sector plate-shaped body arranged parallel to the plane of the rotary table 30, and is defined by an outer peripheral wall extending from the outer peripheral arc of the annular sector ceiling toward the rotary table 30, an inner peripheral wall extending from the inner peripheral arc of the annular sector ceiling, and a side wall extending from the side along the radius of the annular sector ceiling, and the surface facing the rotary table 30 opposite to the ceiling is open. Between the lower end of the box-type shield member 11 and the rotary table 30, a gap is formed through which the workpiece W placed on the rotary table 30 can pass.

[0035] The film processing unit 50 is assigned to one location on the circular locus L. The film processing unit 50 has a plasma generator constituted by a cylindrical body 51, a window member 52, an antenna 53, an RF power source 54, a matching box 55, and an oxygen gas introduction unit 56.

[0036] The cylindrical body 51 is a member that covers the periphery of a processing space 59 in which the membrane processing is performed. As shown in Figs. 1 and 2, the cylindrical body 51 is a cylinder with a rounded rectangular cross section and has an opening. The cylindrical body 51 is fitted into the ceiling 10a of the chamber 10 so that the opening faces the turntable 30 at a distance and protrudes into the internal space of the chamber 10. The cylindrical body 51 is made of metal similar to the turntable 30. The processing space 59 is formed between the turntable 30 and the inside of the cylindrical body 51. The workpieces W circulated and transported by the turntable 30 pass through the processing space 59 repeatedly, thereby performing the membrane processing.

[0037] The window member 52 is a flat plate made of a dielectric material such as quartz having a shape similar to the horizontal cross section of the cylindrical body 51. The window member 52 is provided to close the opening of the cylindrical body 51, and separates the inside of the cylindrical body 51 from a processing space 59 into which the process gas G2 in the chamber 10 is introduced. The window member 52 may be made of a dielectric material such as alumina, or a semiconductor material such as silicon.

[0038] The antenna 53 is a conductor wound into a coil shape, and is disposed in the internal space of the cylindrical body 51 isolated from the processing space 59 in the chamber 10 by the window member 52, and generates an electric field by passing an alternating current through it. It is preferable that the antenna 53 is disposed near the window member 52 so that the electric field generated by the antenna 53 is efficiently introduced into the processing space 59 through the window member 52. An RF power supply 54 that applies a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedance on the input side and the output side.

[0039] The oxygen gas introduction unit 56 introduces the process gas G2 into the processing space 59. The oxygen gas introduction unit 56 has a supply source of the process gas G2, such as a cylinder (not shown), and a pipe 57. The pipe 57 is connected to the supply source of the process gas G2, penetrates the chamber 10 while hermetically sealing it, and extends into the interior of the chamber 10, with its end opening as a gas introduction port 58. The gas introduction port 58 opens into the processing space 59 between the window member 52 and the rotary table 30, and introduces the process gas G2. The process gas G2 is a mixed gas containing oxygen (O2) gas and a rare gas such as argon gas.

[0040] In the film processing section 50, a high-frequency voltage is applied to the antenna 53 from the RF power supply 54. This causes a high-frequency current to flow through the antenna 53, generating an electric field due to electromagnetic induction. The electric field is generated in the processing space 59 through the window member 52, and the process gas G2 is turned into plasma, generating inductively coupled plasma. This plasma generates oxygen species including oxygen ions, which collide with the yttrium film on the workpiece W and bond with the yttrium atoms. As a result, the yttrium film on the workpiece W is oxidized to become an yttria (yttrium oxide) film. The workpiece W is circulated and transported by the rotary table 30 and rotates around the chamber 10 many times, so that the workpiece W passes through the film forming section 40 and the film processing section 50 in an alternating manner, and film forming and film processing are alternately repeated on the workpiece W to grow a film of a desired thickness.

[0041] In such a film forming apparatus 1, an adhesion prevention plate 12 is removably provided in the chamber 10. The adhesion prevention plate 12 prevents the film forming material scattered from the film forming processing unit 40 from adhering to the inside of the chamber 10. The adhesion prevention plate 12 is, for example, a metal plate. On the surface of the adhesion prevention plate 12, for example, a plasma sprayed film of aluminum or aluminum alloy is formed, and the surface is roughened by sandblasting or the like. This enhances the adhesion with the deposited film, and suppresses peeling of the film material.

[0042] A plurality of adhesion prevention plates 12 are combined together and arranged to cover, for example, the inner peripheral surface 10c of the chamber 10. Although not shown, adhesion prevention plates 12 are also arranged on the turntable 30 at locations other than the tray 60. Adhesion prevention plates 12 are also arranged on the peripheral surface of the box-type shield member 11. Furthermore, adhesion prevention plates 12 are also provided around the target 412 in the processing space 41 of the film formation processing unit 40. In this way, the adhesion prevention plates 12 are appropriately arranged in locations where the film formation material may adhere.

[0043] The adhesion prevention plate 12 is removed by opening the chamber 10 for maintenance. The ceiling 10a of the chamber 10 is detachably attached to the side wall 10c. The ceiling 10a is attached via a sealing member such as an O-ring (not shown), thereby sealing the inside of the chamber 10. By removing the ceiling 10a, maintenance including cleaning of the inside of the chamber 10 becomes possible. That is, the adhesion prevention plate 12 is removed, and the film deposited on the surface is removed by sandblasting, and further washed with pure water. After washing and drying, the adhesion prevention plate 12 is transported in a vacuum-packed state to the film forming apparatus 1, opened, and attached to the film forming apparatus 1 again.

[0044] The various elements of the film forming apparatus 1 are controlled by a control unit 80. The control unit 80 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing the control contents, setting values, threshold values, etc.

[0045] The control mode of the control unit 80 includes at least a main operation mode and a getter material preparation mode, and depending on the mode, the control unit 80 controls various elements constituting the film forming apparatus 1, such as the exhaust unit 20, the sputtering gas introduction unit 419, the oxygen gas introduction unit 428, the power supply unit 416, the RF power supply 424, the rotating table 30, and the transfer chamber 70. There may be other operation modes besides the main operation mode and the getter material preparation mode.

[0046] In the actual operation mode, an yttria film is formed on the workpiece W. In the getter material preparation mode, the operation is performed in a state in which the workpiece W has not yet been carried into the chamber 10, and a getter material is prepared in the chamber 10. The getter material is a member that produces a getter effect by adsorbing moisture, and is prepared on the turntable 30 by the film formation apparatus 1 under the control of the control unit 80. This getter material is, for example, a tray 60 that is placed on the turntable 30 when a yttria film is formed on the workpiece W. By forming a yttrium film, which is the same as the film formation material for the workpiece W, on the tray 60 that does not hold the workpiece W, the tray 60 becomes the getter material.

[0047] However, as shown in FIG. 3, which is a schematic perspective view of the tray 60, a recess 61 that matches the shape of the workpiece W is formed on the surface of the tray 60. The workpiece W is held on the tray 60 by being fitted into this recess 61. When forming a yttrium film on the tray 60, a flat plate 62 is fitted into the recess 61 of the tray 60. The flat plate 62 has the same shape and size as the recess 61, and does not provide any room for yttrium particles to enter between the recess 61 and the flat plate 62. By fitting the flat plate 62 into the recess 61, the yttrium film is not formed on the recess 61 that comes into contact with the workpiece W. Therefore, when the workpiece W is fitted into the recess 61 of the tray 60 on which the yttrium film has been formed, the workpiece W on which the yttria film is to be formed is not metal-contaminated with yttrium.

[0048] 4 is a flowchart showing a film forming operation including the control of the control unit 80 which controls various elements in the getter material preparation mode. First, before moving to the getter material preparation mode, maintenance is performed inside the chamber 10 (step S01). In the maintenance, the chamber 10 is opened to the atmosphere, the adhesion prevention plate 12 is removed from the chamber 10, and a new adhesion prevention plate 12 or a cleaned adhesion prevention plate 12 is installed in the chamber 10.

[0049] Next, the flat plate 62 is fitted into the recess 61 (step S02). Then, the tray 60 with the flat plate 62 fitted therein but without the workpiece W placed thereon is carried into the chamber 10 via the transfer chamber 70 (step S03). Then, these trays 60 are lined up at equal circumferential positions on the turntable 30 (step S04). That is, the turntable 30 sequentially moves the empty holders 32 to the loading positions from the transfer chamber 70. The holders 32 individually hold each of the trays 60 carried in by the transport means. In this way, all of the trays 60 with the flat plates 62 fitted therein instead of the workpiece W are placed on the turntable 30.

[0050] From this point, the control unit 80 shifts to a getter material preparation mode, and the control unit 80 operates the exhaust unit 20 to reduce the pressure in the chamber 10 to a predetermined level (step S05). Then, the control unit 80 controls the turntable 30 to rotate the turntable 30 on which the tray 60 is placed at a predetermined rotation speed (step S06).

[0051] When the rotation of the turntable 30 reaches a predetermined rotation speed, the control unit 80 controls the sputtering gas inlet 419 of the film formation processing unit 40 to supply a sputtering gas G1, such as argon gas, between the target 412 and the turntable 30 through the gas inlet 417 until the processing space 41 of the film formation processing unit 40 reaches a predetermined processing pressure (step S07).

[0052] When the processing space 41 of the film forming processing unit 40 reaches a predetermined processing pressure by the sputtering gas G1, the control unit 80 controls the power supply unit 416 to apply a voltage to the target 412 containing yttrium as a film forming material through the electrode 414 (step S08). This causes the sputtering gas G1 to become plasma. Ions generated by the plasma collide with the target 412 and knock out yttrium particles. Yttrium particles are deposited on the surface of the tray 60 passing through the film forming processing unit 40 every time the tray 60 passes through the film forming processing unit 40, forming an yttrium film. In this getter material preparation mode, the film processing unit 50 is not operated. That is, the tray 60 passes through the section in which the film processing unit 50 is arranged without being subjected to film processing by the film processing unit 50.

[0053] The control unit 80 determines whether the yttrium film formed on the tray 60 has reached a predetermined film thickness (step S09). The predetermined film thickness is preferably, but not limited to, 200 nm or more and less than 300 nm.

[0054] For a given film thickness, the relationship between the film thickness of the yttrium film formed on the tray 60 and the degree of vacuum in the chamber 10 is as shown in Table 1 below. In Table 1, the degree of vacuum in the chamber 10 was measured about 12 hours after the chamber 10 was left in the chamber 10 after the chamber was evacuated again after maintenance and the trays 60 on which the yttrium films of thicknesses ranging from 0 nm to 300 nm were formed were left in the chamber 10. In Table 1, 0 nm indicates that the trays 60 on which the yttrium films were not yet formed were left in the chamber 10.

[0055] [Table 1]

[0056] As shown in Table 1, the pressure in the chamber 10 was lower, or in other words, the degree of vacuum was higher, when the film thickness was 200 nm or more than when the film thickness was less than 200 nm. That is, the partial pressure of moisture in the chamber 10 was lowered. Furthermore, even if the tray 60 on which the yttrium film was formed to a thickness of 300 nm or more was placed in the chamber 10, the degree of vacuum did not increase any further. Therefore, the thickness of the yttrium film is preferably 200 nm or more, and is preferably less than 300 nm in order to prevent consumption of the target 412.

[0057] The thickness of the yttrium film may be estimated based on the accumulated film formation time, for example, by determining in advance the film formation time required to reach a target film thickness by simulation, calculation, or actual measurement using a step gauge.

[0058] When the yttrium film formed on the tray 60 reaches a predetermined thickness (step S09, Yes), the control unit 80 controls the power supply unit 416 to stop the voltage application to the target 412 through the electrode 414 (step S10). Then, the control unit 80 controls the sputtering gas inlet 419 of the film forming unit 40 to stop the supply of the sputtering gas G1 through the gas inlet 417 (step S11). Furthermore, the control unit 80 controls the turntable 30 to stop the rotation of the turntable 30 on which the tray 60 is placed (step S12). Note that while the yttrium film formed on the tray 60 does not reach a predetermined thickness (step S09, No), the control unit 80 does not stop the voltage application to the target 414, the supply of the sputtering gas G1, or the rotation of the turntable 30. That is, the voltage application to the target 414, the supply of the sputtering gas G1, and the rotation of the turntable 30 are maintained.

[0059] This produces a getter material consisting of the tray 60 and the yttrium film formed on the tray 60. This getter material has the function of adsorbing moisture-related components such as O2, H2, and H2O by the getter effect, thereby lowering the moisture partial pressure in the chamber 10. The getter effect is the effect of adsorbing gas molecules by a chemical reaction in a vacuum. By holding such a getter material on the turntable 30 in the chamber 10, the moisture partial pressure in the chamber 10 can be lowered not only in the film forming processing section 40, but also in the film processing section 50 and other places.

[0060] The tray 60 is used in the actual operation mode when the flat plate 62 is removed and an yttria film is formed on the workpiece W. That is, the workpiece W is held by the tray 60 on which the yttrium film is formed except for the recessed portion 61, and is carried into the chamber 10, passes through the film forming processing unit 40 and the film processing unit 50, and the yttria film is formed.

[0061] In addition, in the film forming operation for producing the getter material, after the maintenance is performed by opening the chamber to the atmosphere, the chamber 10 may be preheated before proceeding to the production of the getter material. First, the gate valve GV1 between the chamber 10 and the transfer chamber 70 is opened while the gate valve GV2 is closed, and the exhaust unit 20 starts exhausting. This reduces the pressure in the chamber 10 and the transfer chamber 70. The transfer chamber 70 is equipped with a cooling mechanism, and the cooling mechanism is cooled to an extremely low temperature below the freezing point. Then, the oxygen gas introduction unit 56 of the film processing unit 50 starts introducing argon gas and oxygen gas, the RF power supply 54 of the plasma generator is turned on, and the process gas G2 introduced into the processing space 59 is turned into plasma. The turntable 30 passing through the processing space 59 is heated by radiant heat due to the heat of the plasma, and the inside of the chamber 10 is further heated through the turntable 30. This pre-heating causes the moisture adsorbed to the components within the chamber 10 to desorb and be adsorbed onto the cooling mechanism of the transfer chamber 70, thereby discharging the moisture from within the chamber 10 and reducing the partial pressure of moisture within the chamber 10.

[0062] (Action and effect) As described above, the film forming apparatus 1 of the present embodiment includes the chamber 10, the turntable 30, the film forming processing unit 40, the film processing unit 50, and the control unit 80. The chamber 10 can be evacuated inside. The turntable 30 is provided in the chamber 10, holds the workpiece W, and circulates and transports the workpiece W along a circular trajectory L. The film forming processing unit 40 has a target 412 made of a film forming material containing yttrium and a plasma generator that converts the sputtering gas G1 introduced between the target 412 and the turntable 30 into plasma, applies a voltage to the target 412, and knocks out yttrium particles from the target 412 toward the turntable 30 to form an yttrium film on the workpiece W held on the turntable 30. The film processing unit 50 has an oxygen gas introduction unit 56 that introduces oxygen gas and a plasma generator that converts the oxygen gas into plasma, and oxidizes the yttrium film formed on the workpiece W.

[0063] The control unit 80 controls the operations of the turntable 30, the film forming unit 40, and the film processing unit 50. The control unit 80 rotates the turntable 30 in a state where the workpiece W is not held, causes the plasma generator of the film forming unit 40 to generate plasma from the sputtering gas, and applies a voltage to the target 412, so that yttrium particles are ejected toward the turntable 30 on which the workpiece W is not held.

[0064] As a result, an yttrium film is formed on the tray 60 installed on the turntable 30 without holding the workpiece W. The tray 60 serves as a getter material that adsorbs moisture, and is circulated and transported in the chamber 10 before the yttria film is formed on the workpiece W. Therefore, moisture can be removed at various locations in the chamber 10 without complicating the device configuration by disposing heating units at various locations in the chamber 10, and the degree of vacuum in the chamber 10 can be increased. Note that, as long as a member can be installed on the turntable 30, it is not limited to the tray 60, and an yttrium film may be formed on the member to be used as the getter material. For example, an yttrium film may be formed on the surface of the turntable 30, and the turntable 30 may be used as the getter material. In addition, for example, the getter material may be a plate-shaped member rather than a member that holds the workpiece W, such as a tray.

[0065] Further, the tray 60 is formed with a recess 61 into which the workpiece W is fitted. When the tray 60 is used as a getter material, a flat plate 62 is fitted into the recess 61, and the control unit 80 rotates the turntable 30 on which the tray 60 with the flat plate 62 fitted into the recess 61 instead of the workpiece W is placed. As a result, no yttrium film is formed in the recess 61 into which the workpiece W is fitted. Therefore, when the workpiece W is fitted into the tray 60, the yttrium film comes into contact with the workpiece W, reducing the risk of metal contamination of the workpiece W.

[0066] (Other embodiments) Although the embodiment of the present invention and the modified examples of each part have been described, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0067] 1 Film deposition equipment 10. Chamber 10a Ceiling 10b Inner bottom surface 10c Inner surface 11 Box-type shielding member 12 Anti-adhesion plate 20 Exhaust section 30 Rotating Table 31 Motor 32 Holding part 40 Film forming processing section 41 Processing Space 412 Target 413 Backing Plate 414 Electrode 416 Power supply section 417 Gas inlet 418 Piping 419 Sputtering gas inlet 50 Membrane processing section 51 Cylindrical body 52 Window Materials 53 Antenna 54 RF power supply 55 Matching Box 56 Oxygen gas inlet 57 Piping 58 Gas inlet 59 Processing Space 60 Tray 61 Recess 62 flat plate 70 Transfer Chamber 71 Load lock section 80 Control section

Claims

1. a chamber capable of creating a vacuum therein; a rotary table provided within the chamber, which holds a workpiece and circulates the workpiece along a circular path; a film forming processing section including a target made of a film forming material containing yttrium, a plasma generator that applies a voltage to the target and converts a sputtering gas introduced between the target and the rotary table into plasma, and knocks out yttrium particles from the target toward the rotary table to form a yttrium film on the workpiece held on the rotary table; a film processing section having an oxygen gas introduction section for introducing oxygen gas and a plasma generator for converting the oxygen gas into plasma, and for oxidizing the yttrium film formed on the workpiece; A control unit that controls operations of the turntable, the film forming unit, and the film processing unit; Equipped with the control unit rotates the turntable in a state where the workpiece is not held, applies a voltage to the target, and strikes yttrium particles toward the turntable where the workpiece is not held; A film forming apparatus characterized by the above.

2. The control unit has a main operation mode in which the operation of the film forming processing unit and the film processing unit is controlled in a state in which the workpiece is held, and a getter material preparation mode in which the operation of the film forming processing unit and the film processing unit is controlled in a state in which the workpiece is not held; 2. The film forming apparatus according to claim 1,

3. A tray is placed on the rotary table and holds the workpiece, the control unit rotates the turntable on which the tray is placed while not holding the workpiece, applies a voltage to the target, and forms a yttrium film on the tray; 3. The film forming apparatus according to claim 1 or 2,

4. The tray has a recess into which the workpiece is fitted, The control unit rotates the turntable on which the tray is placed, in which a flat plate is fitted in the recess instead of the workpiece, when forming a yttrium film on the tray; 4. The film forming apparatus according to claim 3,

5. placing the tray having the yttrium film formed on its surface and holding the workpiece on the turntable, forming an yttrium film on the workpiece in the film forming processing unit, and oxidizing the yttrium film formed on the workpiece in the film processing unit; 5. The film forming apparatus according to claim 3 or 4,

6. a chamber capable of creating a vacuum therein; a rotary table provided within the chamber, which holds a workpiece and circulates the workpiece along a circular path; a film forming processing section including a target made of a film forming material containing yttrium, a plasma generator that applies a voltage to the target and converts a sputtering gas introduced between the target and the rotary table into plasma, and knocks out yttrium particles from the target toward the workpiece that is circulated and transported by the rotary table, thereby forming a yttrium film on the workpiece; a film processing section having an oxygen gas introduction section for introducing oxygen gas and a plasma generator for converting the oxygen gas into plasma and oxidizing the formed yttrium film; A film forming method using a film forming apparatus comprising: rotating the rotary table in a state where the workpiece is not held, applying a voltage to the target, and striking the yttrium particles toward the rotary table where the workpiece is not held; The film forming method is characterized by the above.

7. placing a tray having a surface on which an yttrium film is formed and holding the workpiece on the turntable, forming an yttrium film on the workpiece in the film forming processing unit, and oxidizing the yttrium film formed on the workpiece in the film processing unit; 7. The film forming method according to claim 6,

Images