Facet area detection method, wafer production method, detection device, and laser processing device

Abstract

To provide a method for detecting a facet area, a method for producing a wafer, a detection device, and a laser processing device capable of estimating the position of the facet area inside an ingot.SOLUTION: A method for detecting a facet area includes a first irradiation step 201 and a second irradiation step 204 of irradiating a first surface and a second surface of an ingot with light, respectively, a first fluorescence detection step 202 and a second fluorescence detection step 205 of obtaining the photon number distribution of a fluorescence in the first surface and the second surface, respectively, a first determination step 203 of determining an area in which the number of fluorescence photons on each of the first surface and the second surface is smaller than a predetermined value as the facet area, and determining an area in which the number of fluorescence photons is equal to or greater than a predetermined value as a non-facet area, a second decision step 206, and a calculating step 207 of calculating an estimated position of the facet area within the ingot on the basis of the facet area of the first surface and the facet area of the second surface.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a facet region detection method, a wafer production method, a detection device, and a laser processing device. [Background technology]

[0002] Conventionally, a method for cutting wafers from a cylindrical ingot using a wire saw has been known as a method for manufacturing semiconductor wafers, but cutting with a wire saw has a problem that most of the ingot is lost as kerf loss, making it uneconomical. In addition, since the SiC single crystal used in power devices has high hardness, there is a problem that cutting takes time and productivity is low. To solve this problem, a method has been proposed in which the focal point of a laser beam is positioned inside the ingot and the focal point is scanned to slice a plate-shaped workpiece from the ingot (see Patent Document 1).

[0003] Incidentally, SiC single crystals may have regions called facet regions that have a high impurity concentration and a higher refractive index and energy absorption rate than other regions (non-facet regions). If a facet region exists, when a peeling layer is formed inside an ingot by irradiating it with a laser beam, the depth position of the peeling layer may become non-uniform, and the kerf loss may increase. Therefore, a laser processing device has been proposed that identifies facet regions and non-facet regions and irradiates both regions with a laser beam under different irradiation conditions (see Patent Document 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-111143 A [Patent Document 2] JP 2020-077783 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, since the facet region is not necessarily formed vertically inside the ingot, the facet region on the surface irradiated by the laser beam moves each time the wafer is peeled off, which necessitates detection each time, resulting in a problem of time-consuming processing.

[0006] The present invention has been made in consideration of such problems, and its object is to provide a facet region detection method, a wafer production method, a detection device, and a laser processing device that can estimate the position of a facet region inside an ingot. [Means for solving the problem]

[0007] In order to solve the above-mentioned problems and achieve the object, a facet region detection method of the present invention is a method for detecting a facet region of a SiC single crystal ingot having a first surface and a second surface that is an opposite surface to the first surface, the method including a first irradiation step of irradiating the first surface of the SiC single crystal ingot with light from a light source, a first fluorescence detection step of detecting fluorescence generated from the first surface of the SiC single crystal ingot by the light irradiated to the first surface and obtaining a distribution of the number of photons of the fluorescence, a first determination step of determining a region on the first surface where the number of photons of the fluorescence detected in the first fluorescence detection step is smaller than a predetermined value as a facet region and determining a region where the number of photons of the fluorescence is equal to or greater than the predetermined value as a non-facet region, and a second irradiation step of irradiating light from a light source onto the second surface of the SiC single crystal ingot; a second fluorescence detection step of detecting fluorescence generated from the second surface of the SiC single crystal ingot by the light irradiated onto the second surface and obtaining a distribution of the number of photons of the fluorescence; a second determination step of determining, on the second surface, a region in which the number of photons of the fluorescence detected in the second fluorescence detection step is smaller than a predetermined value as a facet region and determining, on the other hand, a region in which the number of photons of the fluorescence is equal to or greater than a predetermined value as a non-facet region; and a calculation step of calculating an estimated position of the facet region within the SiC single crystal ingot based on the region on the first surface determined to be a facet region in the first determination step and the region on the second surface determined to be a facet region in the second determination step.

[0008] The wafer production method of the present invention is a wafer production method for producing a wafer from a SiC single crystal ingot in which an estimated position of a facet region inside has been calculated by the facet region detection method, and includes a laser beam irradiation step of irradiating the SiC single crystal ingot with a focal point positioned at a depth inside the SiC single crystal ingot corresponding to the thickness of a wafer to be produced, and relatively moving the focal point and the SiC single crystal ingot in a direction parallel to the first surface to form a delamination layer in the SiC single crystal ingot, a peeling step of peeling the wafer to be produced from the SiC single crystal ingot using the peeled layer as an interface, and a peeling step of removing the peeled layer from the SiC single crystal ingot. and a grinding step of grinding the peeled surface of the SiC single crystal ingot after the laser beam irradiation step, and further comprising, before the laser beam irradiation step, an estimation step of estimating a position of the facet region on the irradiation surface of the laser beam based on the estimated position of the facet region inside the SiC single crystal ingot calculated in the calculation step and the thickness of the SiC single crystal ingot reduced by peeling the wafer from the SiC single crystal ingot, and a setting step of setting the irradiation conditions of the laser beam irradiated to the estimated facet region on the irradiation surface to different irradiation conditions from the irradiation conditions of the laser beam irradiated to the non-facet region.

[0009] Further, a detection device of the present invention is a detection device for detecting facet regions of a SiC single crystal ingot having a first surface and a second surface that is the surface opposite to the first surface, and is characterized in comprising: a light source that irradiates light onto the SiC single crystal ingot; a fluorescence detection unit that detects fluorescence generated from the first surface and the second surface by light irradiated onto the first surface and the second surface from the light source and obtains a distribution of the number of photons of the fluorescence; a determination unit that determines a position of the facet region on the first surface and a position of the facet region on the second surface of the SiC single crystal ingot based on the distribution of the number of photons of the fluorescence detected by the fluorescence detection unit; and a calculation unit that calculates an estimated position of the facet region within the SiC single crystal ingot based on the position of the facet region on the first surface and the position of the facet region on the second surface determined by the determination unit.

[0010] Moreover, the laser processing apparatus of the present invention is a laser processing apparatus for forming a peeling layer on a SiC single crystal ingot having a first surface and a second surface that is the surface opposite to the first surface, the laser processing apparatus including a light source for irradiating light onto the SiC single crystal ingot, a fluorescence detection unit for detecting fluorescence generated from the first surface and the second surface by light irradiated onto the first surface and the second surface from the light source and obtaining a distribution of the number of photons of the fluorescence, a holding unit having a holding surface for holding the SiC single crystal ingot, a laser beam irradiation unit for irradiating the SiC single crystal ingot with a focal point of a laser beam having a wavelength that is transparent to the SiC single crystal ingot, positioned at a depth inside the SiC single crystal ingot corresponding to the thickness of a wafer to be produced, thereby forming a peeling layer, and a moving unit for relatively moving the holding unit and the focal point of the laser beam in a direction parallel to the holding surface. and a control unit, the control unit including a determination unit that determines a position of a facet region on the first surface and a position of a facet region on the second surface of the SiC single crystal ingot based on a distribution of the number of photons of the fluorescence detected by the fluorescence detection unit, a calculation unit that calculates an estimated position of the facet region within the SiC single crystal ingot based on the position of the facet region on the first surface and the position of the facet region on the second surface determined by the determination unit, and an estimation unit that estimates the position of the facet region on the surface irradiated with the laser beam based on the estimated position of the facet region within the SiC single crystal ingot calculated by the calculation unit and a thickness of the SiC single crystal ingot reduced as a result of a SiC wafer being peeled off from the SiC single crystal ingot. Effect of the Invention

[0011] The present invention is capable of estimating the location of facet regions within an ingot. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view of an ingot that is a detection target of a facet region detection method according to an embodiment. [Diagram 2] FIG. 2 is a side view of the ingot shown in FIG. [Diagram 3] FIG. 3 is a perspective view showing a configuration example of a laser processing apparatus including a detection device according to an embodiment. [Figure 4] FIG. 4 is an explanatory diagram illustrating a schematic configuration of the fluorescence detection unit of the laser processing apparatus shown in FIG. [Diagram 5] FIG. 5 is a flow chart showing the flow of a facet region detection method and a wafer generation method according to the embodiment. [Figure 6] FIG. 6 is a perspective view showing the first irradiation step shown in FIG. [Figure 7] FIG. 7 is a diagram showing an example of the XY coordinate positions at which the fluorescence is detected in the first fluorescence detection step shown in FIG. [Figure 8] FIG. 8 is a diagram showing an example of the estimated position of the facet region calculated in the calculation step shown in FIG. [Figure 9] FIG. 9 is a perspective view showing one state of the laser beam irradiation step shown in FIG. [Figure 10] FIG. 10 is a perspective view showing another state of the laser beam irradiation step shown in FIG. [Figure 11] FIG. 11 is a diagram illustrating an example of the peeling step illustrated in FIG. [Figure 12] FIG. 12 is a diagram illustrating an example of the grinding step illustrated in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiment. Furthermore, the components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the configurations described below can be appropriately combined. Furthermore, various omissions, substitutions, or modifications of the configurations can be made without departing from the gist of the present invention.

[0014] [Embodiment] A method for detecting a facet region 21, a method for producing a wafer 30, and a detection device according to an embodiment of the present invention will be described with reference to the drawings. In the embodiment described below, the detection device is included in a laser processing device 100. The method for detecting a facet region 21 according to the embodiment includes the following steps: This is a method of calculating an estimated position of facet region 21 inside ingot 10 shown in Fig. 8 etc. from ingot 10 shown in Fig. 1 and Fig. 2 using a detection device (laser processing device 100) shown in Fig. 3 and Fig. 4. Also, the method of producing wafer 30 of the embodiment is a method of producing wafer 30 shown in Fig. 11 etc. from ingot 10 in which the estimated position of facet region 21 inside has been calculated.

[0015] (SiC single crystal ingot) First, the configuration of an ingot 10 that is a detection target of the method for detecting a facet region 21 according to the embodiment of the present invention will be described. Fig. 1 is a perspective view of an ingot 10 that is a detection target of the method for detecting a facet region 21 according to the embodiment. Fig. 2 is a side view of the ingot 10 shown in Fig. 1.

[0016] The ingot 10 of the embodiment shown in Figures 1 and 2 is a single crystal SiC ingot made of SiC (silicon carbide) and formed into a cylindrical shape as a whole. In the embodiment, the ingot 10 is a hexagonal single crystal SiC ingot. The ingot 10 has a first surface 11, a second surface 12, a peripheral surface 13, a first orientation flat 14, and a second orientation flat 15.

[0017] The first surface 11 is circular and is one end surface of the ingot 10 formed in a cylindrical shape. The second surface 12 is circular and is the end surface of the ingot 10 opposite to the first surface 11, which is formed in a cylindrical shape. The second surface 12 corresponds to the bottom surface of the ingot 10. The peripheral surface 13 is a surface that is continuous with the outer edge of the first surface 11 and the outer edge of the second surface 12.

[0018] The first orientation flat 14 is a plane formed on a part of the peripheral surface 13 to indicate the crystal orientation of the ingot 10. The second orientation flat 15 is a plane formed on a part of the peripheral surface 13 to indicate the crystal orientation of the ingot 10. The second orientation flat 15 is perpendicular to the first orientation flat 14. The length of the first orientation flat 14 is longer than the length of the second orientation flat 15.

[0019] The ingot 10 also has a c-axis 18 inclined at an off angle 20 in an inclination direction 17 toward the second orientation flat 15 with respect to a perpendicular line 16 to the first surface 11, and a c-plane 19 perpendicular to the c-axis 18. The inclination direction 17 of the c-axis 18 from the perpendicular line 16 is perpendicular to the extension direction of the second orientation flat 15 and is parallel to the first orientation flat 14. The c-plane 19 is inclined at the off angle 20 with respect to the first surface 11 of the ingot 10.

[0020] An infinite number of c-planes 19 are set in the ingot 10 at the molecular level of the ingot 10. In the embodiment, the ingot 10 has an off-angle 20 set to 1°, 4°, or 6°, but in the present invention, the ingot 10 may be manufactured with the off-angle freely set within the range of, for example, 1° to 6°. After the first surface 11 of the ingot 10 is ground by a grinding device, the ingot 10 is polished by a polishing device to form the first surface 11 into a mirror surface.

[0021] Furthermore, the ingot 10 of the embodiment is formed mainly as a hexagonal single crystal SiC ingot, but has a facet region 21 locally. The facet region 21 is formed in a columnar shape from the first surface 11 to the second surface 12 of the ingot 10 (see FIG. 8). The facet region 21 is relatively more likely to incorporate nitrogen than the non-facet region 22 other than the facet region 21, and therefore has a higher nitrogen concentration than other regions.

[0022] (Laser processing equipment) Next, the configuration of the laser processing apparatus 100 including the detection device according to the embodiment of the present invention will be described. FIG. 3 is a perspective view showing an example of the configuration of the laser processing apparatus 100 including the detection device according to the embodiment. FIG. 4 is an explanatory diagram for explaining a schematic configuration of the fluorescence detection unit 120 of the laser processing apparatus 100 shown in FIG. 3. In the following description, the X-axis direction is one direction on a horizontal plane. The Y-axis direction is a direction perpendicular to the X-axis direction on a horizontal plane. The Z-axis direction is a direction perpendicular to the X-axis direction and the Y-axis direction. The laser processing apparatus 100 of the embodiment has a holding unit 110, a fluorescence detection unit 120, a laser beam irradiation unit 140, a moving unit 150, a display unit 160, and a control unit 170.

[0023] The holding unit 110 holds the ingot 10 on a holding surface 111. The holding surface 111 has a disk shape formed from porous ceramics or the like. In the embodiment, the holding surface 111 is a plane parallel to the horizontal direction. The holding surface 111 is connected to a vacuum suction source via, for example, a vacuum suction path. The holding unit 110 holds the ingot 10 placed on the holding surface 111 by suction.

[0024] The holding unit 110 is rotated around an axis parallel to the Z-axis direction by the rotation unit 112. The rotation unit 112 is supported by an X-axis direction moving plate 113. The rotation unit 112 and the holding unit 110 are moved in the X-axis direction by the moving unit 150 via the X-axis direction moving plate 113. The rotation unit 112 and the holding unit 110 are moved in the Y-axis direction by the moving unit 150 via the X-axis direction moving plate 113 and the Y-axis direction moving plate 114.

[0025] The fluorescence detection unit 120 is a unit that irradiates the ingot 10 held on the holding surface 111 of the holding unit 110 with light 121 of a predetermined wavelength from above the ingot 10 and detects fluorescence 122 generated from the upper surface (first surface 11 or second surface 12) of the ingot 10. A part of the fluorescence detection unit 120 is supported by the tip of a support beam 103 that extends horizontally from the upper end of an erect wall 102 that stands upright from the apparatus body 101. As shown in FIG. 4, the fluorescence detection unit 120 includes a light source 123, a condenser lens 124, an excitation light reflecting mirror 125, a light receiving unit 126, a bandpass filter 127, and a fluorescence reflecting mirror 128.

[0026] The light source 123 irradiates the ingot 10 with light 121 having a wavelength that is absorbed by the ingot 10. The light source 123 has, for example, a GaN (gallium nitride) based light emitting element.

[0027] The condenser lens 124 condenses and irradiates the light 121 emitted from the light source 123 toward the upper surface of the ingot 10 held on the holding surface 111 of the holding unit 110. In the embodiment, the condenser lens 124 is disposed between the excitation light reflecting mirror 125 and the ingot 10, but in the present invention, the condenser lens 124 may be disposed between the light source 123 and the excitation light reflecting mirror 125.

[0028] The excitation light reflecting mirror 125 reflects the light 121 irradiated from the light source 123 and guides it toward the upper surface of the ingot 10 held on the holding surface 111 of the holding unit 110. In the embodiment, the excitation light reflecting mirror 125 reflects the light 121 irradiated from the light source 123 toward the condenser lens 124.

[0029] The light receiving unit 126 detects the number of photons of the fluorescence 122 generated from the upper surface of the ingot 10. The light receiving unit 126 includes, for example, a highly sensitive photodetector that converts light energy into electrical energy using the photoelectric effect and is also equipped with a current amplification (electron multiplication) function. The light receiving unit 126 is disposed, for example, in a vacuum region partitioned by a glass tube, receives photoelectrons (photons) of the fluorescence 122 that have passed through the glass tube, and outputs an electrical signal indicating the number of photons of the fluorescence 122. The photoelectrons of the fluorescence 122 received by the light receiving unit 126 generate secondary electrons one after another due to collision of the photoelectrons, amplifying the current.

[0030] The bandpass filter 127 is disposed before the light receiving unit 126. The bandpass filter 127 passes light of a predetermined wavelength among the fluorescence 122 generated from the upper surface of the ingot 10, and removes light of wavelengths other than the predetermined wavelength of the fluorescence 122. Therefore, for example, even if part of the light 121 is scattered and directed toward the light receiving unit 126, the light 121 is removed by the bandpass filter 127.

[0031] Fluorescence reflecting mirror 128 reflects fluorescence 122 generated from the upper surface of ingot 10 toward light receiving unit 126. Fluorescence reflecting mirror 128 is an ellipsoidal mirror in which reflection surface 129 is formed of a part of the curved surface of an ellipse 130 obtained by rotating ellipse 130, which has a major axis 131 extending vertically and a minor axis 132 perpendicular to major axis 131, around major axis 131.

[0032] It is known that an elliptical mirror has two focal points, and light emitted from one focal point is reflected by the inner surface of the elliptical mirror before reaching the other focal point. The elliptical mirror forming the spheroid in the embodiment has a first focal point 133 and a second focal point 134. A portion of the upper surface of the ingot 10 where the light 121 is irradiated is located at the position of the first focal point 133. A light receiving unit 126 is located at the second focal point 134.

[0033] According to this configuration, when light 121 is irradiated toward the upper surface of ingot 10 located at first focal point 133, fluorescence 122 is emitted from the upper surface of ingot 10 by light 121. Fluorescence 122 is reflected by reflecting surface 129 formed of a part of an ellipsoid and collected toward second focal point 134, and is received by light receiving unit 126 arranged at second focal point 134.

[0034] Therefore, the fluorescence 122 emitted from the upper surface of the ingot 10 can be efficiently guided to the light receiving unit 126 arranged at the second focal point 134 via the reflecting surface 129, thereby reducing the loss of the weak fluorescence 122. Furthermore, in the embodiment, since the light receiving unit 126 is arranged at the second focal point 134, the detection sensitivity can be improved even for fluorescence 122 with a weak intensity.

[0035] 3 is a unit that irradiates the ingot 10 held on the holding surface 111 of the holding unit 110 with a pulsed laser beam 141 (see FIG. 9 and the like) having a predetermined wavelength. A part of the laser beam irradiation unit 140 is supported on the tip of a support beam 103 that extends horizontally from the upper end of an erect wall 102 that stands upright from the apparatus body 101. The irradiation section of the laser beam irradiation unit 140 is provided adjacent to the irradiation section of the fluorescence detection unit 120.

[0036] The laser beam irradiation unit 140 forms a peeling layer 25 (see Figure 9, etc.) by, for example, irradiating a laser beam 141 having a wavelength that is transparent to the ingot 10 with a focal point 142 (see Figure 9, etc.) positioned at a depth equivalent to the thickness of the wafer 30 (see Figure 11, etc.) to be produced from the upper surface (irradiation surface 24, see Figure 9, etc.) of the ingot 10.

[0037] The moving unit 150 is a unit that relatively moves the holding unit 110 and the focal point 142 of the laser beam 141 irradiated from the laser beam irradiation unit 140 in the X and Y directions parallel to the holding surface 111. The moving unit 150 includes an X-axis direction moving unit 151 and a Y-axis direction moving unit 152.

[0038] The X-axis direction moving unit 151 is a unit that relatively moves the holding unit 110 and the focal point 142 of the laser beam 141 irradiated from the laser beam irradiation unit 140 in the X-axis direction, which is the processing feed direction. In the embodiment, the X-axis direction moving unit 151 moves the holding unit 110 in the X-axis direction. In the embodiment, the X-axis direction moving unit 151 is installed on the apparatus body 101 of the laser processing apparatus 100. The X-axis direction moving unit 151 supports the X-axis direction moving plate 113 so as to be freely movable in the X-axis direction.

[0039] The Y-axis direction moving unit 152 is a unit that relatively moves the holding unit 110 and the focal point 142 of the laser beam 141 irradiated from the laser beam irradiation unit 140 in the Y-axis direction, which is the indexing and feeding direction. In the embodiment, the Y-axis direction moving unit 152 moves the holding unit 110 in the Y-axis direction. In the embodiment, the Y-axis direction moving unit 152 is installed on the apparatus body 101 of the laser processing apparatus 100. The Y-axis direction moving unit 152 supports the Y-axis direction moving plate 114 so as to be freely movable in the Y-axis direction.

[0040] Each of the X-axis direction moving unit 151 and the Y-axis direction moving unit 152 includes, for example, a well-known ball screw, a well-known pulse motor, and a well-known guide rail. The ball screw is provided so as to be rotatable about its axis. The pulse motor rotates the ball screw about its axis. The guide rail of the X-axis direction moving unit 151 is provided so as to be fixed to the Y-axis direction moving plate 114, and supports the X-axis direction moving plate 113 so as to be movably in the X-axis direction. The guide rail of the Y-axis direction moving unit 152 is provided so as to be fixed to the device body 101, and supports the Y-axis direction moving plate 114 so as to be movably in the Y-axis direction.

[0041] The moving unit 150 may further include a Z-axis direction moving unit that relatively moves the holding unit 110 and the focal point 142 of the laser beam 141 irradiated from the laser beam irradiation unit 140 in the Z-axis direction, which is the focus adjustment direction. The Z-axis direction moving unit moves the condenser of the laser beam irradiation unit 140 in the Z-axis direction.

[0042] In the embodiment, the irradiation section of the fluorescence detection unit 120 is provided adjacent to the irradiation section of the laser beam irradiation unit 140. Therefore, the moving unit 150 also serves as a unit that relatively moves the holding unit 110 and the irradiation position of the light 121 irradiated from the fluorescence detection unit 120 in the XY directions parallel to the holding surface 111.

[0043] The display unit 160 is a display section configured with a liquid crystal display device or the like. The display unit 160 displays, for example, a processing condition setting screen, the state of the ingot 10 captured by an imaging unit (not shown), the state of the processing operation, two-dimensional data and three-dimensional data generated by a control unit 170 (described later), and the like on a display surface. The imaging unit includes, for example, a micro microscope and a macro microscope, and is provided adjacent to the fluorescence detection unit 120 and the irradiation section of the laser beam irradiation unit 140.

[0044] When the display surface of the display unit 160 includes a touch panel, the display unit 160 may include an input unit. The input unit can accept various operations such as an operator registering processing content information. The input unit may be an external input device such as a keyboard. The information and images displayed on the display surface of the display unit 160 are switched by an operation from the input unit or the like. The display unit 160 may include an alarm device. The alarm device emits at least one of sound and light to notify the operator of the laser processing apparatus 100 of predetermined alarm information. The alarm device may be an external alarm device such as a speaker or a light-emitting device.

[0045] The control unit 170 controls each of the above-mentioned components of the laser processing apparatus 100, and causes the laser processing apparatus 100 to execute processing operations on the ingot 10. The control unit 170 is a computer including an arithmetic processing device as a calculation means, a storage device as a storage means, and an input / output interface device as a communication means.

[0046] The arithmetic processing device includes, for example, a microprocessor such as a CPU (Central Processing Unit). The storage device has a memory such as a ROM (Read Only Memory) or a RAM (Random Access Memory). The arithmetic processing device performs various calculations based on a predetermined program stored in the storage device. The arithmetic processing device outputs various control signals to the above-mentioned components via the input / output interface device according to the calculation results, and controls the laser processing device 100.

[0047] The control unit 170, for example, causes the fluorescence detection unit 120 to irradiate the ingot 10 held in the holding unit 110 with light 121 of a predetermined wavelength from above the ingot 10. The control unit 170 acquires, for example, the number of photons of the fluorescence 122 generated from the upper surface of the ingot 10 detected by the fluorescence detection unit 120.

[0048] The control unit 170, for example, causes the moving unit 150 to position the focal point 142 of the laser beam 141 irradiated by the laser beam irradiation unit 140 at a depth corresponding to the thickness of the wafer 30 to be produced inside the ingot 10 held in the holding unit 110. The control unit 170, for example, causes the laser beam irradiation unit 140 to irradiate the laser beam 141 with a wavelength that is transparent to the ingot 10 held in the holding unit 110. The control unit 170, for example, causes the moving unit 150 to relatively move the focal point 142 of the laser beam 141 and the holding unit 110 that holds the ingot 10 in the XY directions.

[0049] The control unit 170 causes, for example, the display unit 160 to display various pieces of information. The control unit 170 causes, for example, the display unit 160 to display the distribution of the number of photons of the fluorescence 122 detected by the fluorescence detection unit 120. The control unit 170 includes a determination unit 171, a calculation unit 172, an estimation unit 173, and a setting unit 174. The control unit 170 causes, for example, the display unit 160 to display an estimated position of the facet region 21 inside the ingot 10 calculated by a calculation unit 172 described below. The control unit 170 causes, for example, the display unit 160 to display the positions of the facet regions 21-1, 21-2 on the irradiation surface 24 (see FIG. 9, etc.) of the laser beam 141 estimated by an estimation unit 173 described below.

[0050] The determination section 171 determines the position of the facet region 21-11 (see Figure 8) on the first surface 11 of the ingot 10 and the position of the facet region 21-12 (see Figure 8) on the second surface 12 based on the distribution of the number of photons of the fluorescence 122 detected by the fluorescence detection unit 120.

[0051] More specifically, the determination unit 171 acquires a distribution of the number of photons of the fluorescence 122 on the first surface 11 of the ingot 10 detected by the fluorescence detection unit 120. The determination unit 171 determines that a region on the first surface 11 where the number of photons of the fluorescence 122 detected is smaller than a predetermined value is a facet region 21-11. The determination unit 171 determines that a region on the first surface 11 where the number of photons of the fluorescence 122 detected is equal to or greater than a predetermined value is a non-facet region 22.

[0052] Furthermore, the determination unit 171 acquires a distribution of the number of photons of the fluorescence 122 on the second surface 12 of the ingot 10 detected by the fluorescence detection unit 120. The determination unit 171 determines that a region on the second surface 12 where the number of photons of the fluorescence 122 detected is smaller than a predetermined value is a facet region 21-12. The determination unit 171 determines that a region on the second surface 12 where the number of photons of the fluorescence 122 detected is equal to or greater than a predetermined value is a non-facet region 22.

[0053] The calculation unit 172 calculates an estimated position of the facet region 21 inside the ingot 10 based on the position of the facet region 21-11 on the first surface 11 and the position of the facet region 21-12 on the second surface 12 determined by the determination unit 171. Specifically, the calculation unit 172 determines the region surrounded when connecting the outer edge of the facet region 21-11 on the first surface 11 and the outer edge of the facet region 21-12 on the second surface 12 as the estimated position of the facet region 21 inside the ingot 10. That is, the facet region 21 inside the ingot 10 is a frustum shape with the facet region 21-11 on the first surface 11 as the upper base surface and the facet region 21-12 on the second surface 12 as the lower base surface.

[0054] The estimation unit 173 estimates the positions of the facet regions 21-1, 21-2 on the irradiation surface 24 (see FIG. 9, etc.) of the laser beam 141. In the embodiment, it is assumed that the horizontal cross section of the facet region 21 inside the ingot 10 changes linearly from the facet region 21-11 of the first surface 11 to the facet region 21-12 of the second surface 12. According to this assumption, the facet regions 21-1, 21-2 of the irradiation surface 24 can be estimated based on the estimated position of the facet region 21 inside the ingot 10 calculated by the calculation unit 172 and the thickness from the second surface 12 of the ingot 10 to the irradiation surface 24.

[0055] The thickness from the second surface 12 of the ingot 10 to the irradiation surface 24 decreases every time the wafer 30 is peeled off from the ingot 10. That is, the estimation unit 173 estimates the positions of the facet regions 21-1, 21-2 on the irradiation surface 24 based on the estimated position of the facet region 21 inside the ingot 10 calculated by the calculation unit 172 and the thickness of the ingot 10 that is reduced as a result of the wafer 30 being peeled off from the ingot 10.

[0056] The setting unit 174 sets the irradiation conditions of the laser beam 141 for forming the peeling layer 25 inside the ingot 10. The setting unit 174 sets the irradiation conditions of the laser beam 141 irradiated to the facet regions 21-1 and 21-2 on the irradiation surface 24 estimated by the estimation unit 173 to irradiation conditions different from the irradiation conditions of the laser beam 141 irradiated to the non-facet region 22.

[0057] (Method for detecting facet regions and method for producing wafers) Next, a method for detecting facet region 21 and a method for generating wafer 30 according to an embodiment of the present invention will be described. Fig. 5 is a flow chart showing the flow of the method for detecting facet region 21 and the method for generating wafer 30 according to an embodiment. The method for detecting facet region 21 has a first irradiation step 201, a first fluorescence detection step 202, a first determination step 203, a second irradiation step 204, a second fluorescence detection step 205, a second determination step 206, and a calculation step 207.

[0058] Moreover, the method for producing the wafer 30 is performed after the calculation step 207, and includes an estimation step 208, a setting step 209, a laser beam irradiation step 210, a peeling step 211, and a grinding step 212. The estimation step 208, the setting step 209, the laser beam irradiation step 210, the peeling step 211, and the grinding step 212 are repeatedly performed while producing a plurality of wafers 30 from one ingot 10.

[0059] <First irradiation step 201> Fig. 6 is a perspective view showing the first irradiation step 201 shown in Fig. 5. The first irradiation step 201 is a step of irradiating the first surface 11 of the ingot 10 with light 121 from a light source 123 (see Fig. 4).

[0060] In the first irradiation step 201, first, the second surface 12 side of the ingot 10 is sucked and held on the holding surface 111 of the holding unit 110. Next, the height of the fluorescence detection unit 120 is adjusted so that the first focal point 133 (see FIG. 4 ) of the fluorescence detection unit 120 is positioned on the first surface 11 of the ingot 10, and the holding unit 110 is moved by the moving unit 150 so that the irradiation portion of the fluorescence detection unit 120 faces the periphery of the first surface 11 of the ingot 10.

[0061] In this state, the rotation unit 112 rotates the holding unit 110 at a predetermined rotation speed (for example, 900° / sec) to rotate the ingot 10 in a predetermined direction (the direction of the arrow shown in the lower part of FIG. 6). While the fluorescence detection unit 120 continuously irradiates the upper surface (first surface 11) of the ingot 10 with light 121, the holding unit 110 is moved so that the fluorescence detection unit 120 moves in a radial direction (the direction of the arrow shown in the upper part of FIG. 6) from the periphery of the ingot 10 toward the center. Then, the fluorescence detection unit 120 moves along a spiral trajectory from the periphery of the ingot 10 toward the center.

[0062] <First Fluorescence Detection Step 202> Fig. 7 is a diagram showing an example of the XY coordinate positions at which fluorescence is detected in the first fluorescence detection step 202 shown in Fig. 5. Table 1 is a table showing an example of the number of photons of fluorescence detected at the XY coordinate positions shown in Fig. 6.

[0063] [Table 1]

[0064] The first fluorescence detection step 202 is a step of detecting fluorescence 122 generated from the first surface 11 of ingot 10 by light 121 irradiated onto the first surface 11, and obtaining a distribution of the number of photons of the fluorescence 122. In the first fluorescence detection step 202, the fluorescence detection unit 120 obtains the number of photons of the fluorescence 122 generated from the first surface 11 of ingot 10. At this time, in the first fluorescence detection step 202, the XY coordinate position of the position where light 121 was irradiated when the fluorescence 122 was obtained is obtained. Data on the distribution of the number of photons of the fluorescence 122 obtained in the first fluorescence detection step 202 is stored in a storage device of the control unit 170, for example.

[0065] In the first fluorescence detection step 202, for example, distribution information of the number of photons of the fluorescence 122 shown in Table 1 is obtained for the detection positions 23-1, 23-2, 23-3, 23-4, 23-5, and 23-6 shown in Fig. 7. That is, in the first fluorescence detection step 202, six coordinates (x1, y1), (x2, y1), (x3, y1), (x4, y1), (x5, y1), and (x6, y1) are associated with six photon counts (5000 cps), (5000 cps), (4000 cps), (2500 cps), (1000 cps), and (3000 cps), respectively, and are obtained.

[0066] <First Determination Step 203> The first determination step 203 is a step of determining whether the first surface 11 is a facet region 21-11 or a non-facet region 22. More specifically, in the first determination step 203, the determination section 171 of the control unit 170 determines, on the first surface 11, a region in which the number of photons of the fluorescence 122 detected in the first fluorescence detection step 202 is smaller than a predetermined value, as a facet region 21-11. Also, in the first determination step 203, the determination section 171 of the control unit 170 determines, on the first surface 11, a region in which the number of photons of the fluorescence 122 detected in the first fluorescence detection step 202 is equal to or greater than a predetermined value, as a non-facet region 22.

[0067] In the embodiment shown in FIG. 7 and Table 1, when the predetermined value is set to 4000, the detection positions 23-3 and 23-4 are in the facet region 21-11, and the detection positions 23-1, 23-2, and 23-5 are in the non-facet region 22.

[0068] <Second irradiation step 204> The second irradiation step 204 is a step of irradiating the second surface 12 of the ingot 10 with light 121 from the light source 123. The second irradiation step 204 is similar to the first irradiation step 201 except that the first surface 11 and the second surface 12 are interchanged in the procedure of the first irradiation step 201, and therefore a description thereof will be omitted.

[0069] <Second Fluorescence Detection Step 205> The second fluorescence detection step 205 is a step of detecting fluorescence 122 generated from the second surface 12 of the ingot 10 by the light 121 irradiated onto the second surface 12, and obtaining a distribution of the number of photons of the fluorescence 122. The second fluorescence detection step 205 is similar to the first fluorescence detection step 202, except that the first surface 11 and the second surface 12 are interchanged compared to the procedure of the first fluorescence detection step 202, and therefore a description thereof will be omitted.

[0070] <Second Determination Step 206> The second determination step 206 is a step of determining that a region on the second surface 12 in which the number of photons of the fluorescence 122 detected in the second fluorescence detection step 205 is smaller than a predetermined value is a facet region 21-12, and that a region in which the number of photons of the fluorescence 122 is equal to or greater than the predetermined value is a non-facet region 22. The second determination step 206 is similar to the first determination step 203 except that the first surface 11 and the second surface 12 are interchanged in the procedure of the first determination step 203, and therefore a description thereof will be omitted.

[0071] <Calculation step 207> FIG. 8 is a diagram showing an example of the estimated position of the facet region 21 calculated in the calculation step 207 shown in FIG. 5. The calculation step 207 is a step of calculating the estimated position of the facet region 21 inside the ingot 10. In the calculation step 207, the calculation unit 172 of the control unit 170 calculates the estimated position of the facet region 21 inside the ingot 10 based on the region determined to be the facet region 21-11 on the first surface 11 in the first determination step 203 and the region determined to be the facet region 21-12 on the second surface 12 in the second determination step 206. Specifically, in the calculation step 207, a frustum is calculated with the facet region 21-11 on the first surface 11 as the upper bottom surface and the facet region 21-12 on the second surface 12 as the lower bottom surface, and the region inside the calculated frustum is set as the estimated position of the facet region 21 inside the ingot 10.

[0072] <Estimation step 208> Estimation step 208 is a step of estimating the position of facet region 21 on irradiated surface 24 (see FIG. 9, etc.) of laser beam 141. In estimation step 208 of the embodiment, the position of facet region 21 on irradiated surface 24 is estimated on the assumption that the horizontal cross section of facet region 21 inside ingot 10 changes linearly from facet region 21-11 on first surface 11 to facet region 21-12 on second surface 12.

[0073] The irradiated surfaces 24-1, 24-2 (see FIGS. 9 and 10) of the laser beam 141 move downward every time a wafer 30 is peeled off from the ingot 10. That is, the thickness from the second surface 12 of the ingot 10 to the irradiated surfaces 24-1, 24-2 decreases every time a wafer 30 is peeled off from the ingot 10.

[0074] That is, in the estimation step 208, first, the thickness of the ingot 10 reduced by the peeling of the wafer 30 from the ingot 10, which is the thickness from the second surface 12 of the ingot 10 to the irradiation surface 24, is calculated. In the estimation step 208, the positions of the facet regions 21-1, 21-2 on the irradiation surfaces 24-1, 24-2 are then estimated based on the estimated position of the facet region 21 inside the ingot 10 calculated in the calculation step 207 and the thickness of the ingot 10 reduced by the peeling of the wafer 30 from the ingot 10.

[0075] <Setting step 209> The setting step 209 is performed before the laser beam irradiation step 210. The setting step 209 is a step of setting the irradiation conditions of the laser beam 141 for forming a peeling layer 25 (see FIGS. 9 and 10) inside the ingot 10. In the setting step 209, the irradiation conditions of the laser beam 141 irradiated to the facet regions 21-1, 21-2 on the irradiation surfaces 24-1, 24-2 estimated in the estimation step 208 are set to irradiation conditions different from the irradiation conditions of the laser beam 141 irradiated to the non-facet region 22.

[0076] In the setting step 209, as different irradiation conditions, for example, the energy of the laser beam 141 may be set to be higher when irradiating the facet regions 21-1 and 21-2 than when irradiating the non-facet region 22. In addition, in the setting step 209, as different irradiation conditions, for example, the position of the condenser of the laser beam irradiation unit 140 may be set to be higher when irradiating the facet regions 21-1 and 21-2 than when irradiating the non-facet region 22. In addition, in the setting step 209, as different irradiation conditions, for example, the overlap rate of the laser beam 141 may be set to be higher when irradiating the facet regions 21-1 and 21-2 than when irradiating the non-facet region 22.

[0077] <Laser beam irradiation step 210> Fig. 9 is a perspective view showing one state of the laser beam irradiation step 210 shown in Fig. 5. Fig. 10 is a perspective view showing another state of the laser beam irradiation step 210 shown in Fig. 5. The laser beam irradiation step 210 is a step of forming a peeling layer 25 by the laser beam 141 at a depth corresponding to the thickness of the wafer 30 to be produced inside the ingot 10.

[0078] In the laser beam irradiation step 210, first, the second surface 12 side of the ingot 10 is sucked and held on the holding surface 111 of the holding unit 110. Next, the focal point 142 of the laser beam 141 is positioned at a depth inside the ingot 10 corresponding to the thickness of the wafer 30 (see FIG. 11) to be produced. The laser beam 141 is a pulsed laser beam having a wavelength that is transparent to the ingot 10. Next, in the laser beam irradiation step 210, the laser beam 141 is irradiated toward the irradiation surface 24 of the ingot 10 while the focal point 142 and the ingot 10 are moved relatively in a direction parallel to the first surface 11 (XY direction).

[0079] Here, the irradiation conditions of the laser beam 141 are the conditions set in the setting step 209. That is, since the estimated positions of the facet regions 21-1, 21-2 differ depending on the thicknesses of the irradiation surfaces 24-1, 24-2 from the second surface 12, the XY positions at which the irradiation conditions of the laser beam 141 are changed differ for each of the irradiation surfaces 24-1, 24-2.

[0080] In the laser beam irradiation step 210, SiC is separated into Si (silicon) and C (carbon) by irradiation with a pulsed laser beam 141. Then, the next pulsed laser beam 141 is absorbed by the previously formed C, and modified portion 26 in which SiC is separated into Si and C in a chain reaction is formed inside ingot 10 along the processing feed direction, and crack 27 extending from modified portion 26 along c-plane 19 (see FIG. 2) is generated. In this way, in the laser beam irradiation step 210, peeling layer 25 including modified portion 26 and crack 27 formed from modified portion 26 along c-plane 19 is formed.

[0081] <Peeling step 211> Fig. 11 is a diagram showing an example of the delamination step 211 shown in Fig. 5. The delamination step 211 is a step of delaminating the wafer 30 to be produced from the ingot 10 with the delamination layer 25 as an interface.

[0082] In the peeling step 211, ultrasonic waves are applied to the ingot 10 by the ultrasonic oscillation unit 180, thereby peeling off the wafer 30 from the ingot 10. As a result, a part of the irradiated surface 24 side of the ingot 10 is peeled off with the peeling layer 25 as the interface, and the peeled part is generated as the wafer 30. The ultrasonic oscillation unit 180 may be provided in the laser processing device 100 (detection device). The ultrasonic oscillation unit 180 includes, for example, an ultrasonic power supply and an ultrasonic vibrator made of piezoelectric ceramics or the like to which a voltage is applied by the ultrasonic power supply.

[0083] In the peeling step 211, first, the second surface 12 side of the ingot 10 is sucked and held on the holding surface 182 of the holding unit 181. Next, the ultrasonic vibrator of the ultrasonic oscillation unit 180 is made to face the irradiation surface 24 of the ingot 10. Next, liquid 186 is supplied from the liquid supply unit 185 between the ultrasonic vibrator and the ingot 10.

[0084] In this state, a voltage is applied from the ultrasonic power supply of the ultrasonic oscillation unit 180 to ultrasonically vibrate the ultrasonic vibrator, so that ultrasonic vibrations of a frequency corresponding to the vibration of the ultrasonic vibrator are propagated into the liquid 186 and applied to the ingot 10. By applying ultrasonic vibrations to the entire surface of the ingot 10, a part of the irradiated surface 24 side of the ingot 10 is peeled off with the peeling layer 25 formed in the laser beam irradiation step 210 as the interface.

[0085] <Grinding step 212> Fig. 12 is a diagram showing an example of the grinding step 212 shown in Fig. 5. The grinding step 212 is performed after the peeling step 211. The grinding step 212 is a step of grinding the peeled surface 28 of the ingot 10.

[0086] In the grinding step 212, the grinding unit 190 grinds the separation surface 28 from which the wafer 30 has been separated in the separation step 211. The grinding unit 190 may be provided in the laser processing apparatus 100 (detection device). The grinding unit 190 includes a spindle 195 which is a rotating shaft member, a wheel base 196 attached to the lower end of the spindle 195, a grinding wheel 197 attached to the lower surface of the wheel base 196, and a grinding water supply nozzle (not shown) for supplying grinding water.

[0087] In the grinding step 212, first, the second surface 12 side of the ingot 10 is sucked and held on the holding surface 192 of the holding unit 191. Next, while the holding unit 191 is rotated about its axis, the wheel base 196 is rotated about its axis. The wheel base 196 rotates about an axis parallel to the axis of the holding unit 191. Grinding water is supplied from a grinding water supply nozzle, and a grinding wheel 197 attached to the lower surface of the wheel base 196 is brought close to the holding unit 191 at a predetermined feed rate, whereby the ingot 10 is ground from the peeled surface 28 side by the grinding wheel 197. As a result, unevenness on the peeled surface 28 of the ingot 10 is removed.

[0088] When the grinding step 212 is completed, the process returns to the estimation step 208, and the estimation step 208 to the grinding step 212 are repeatedly performed until a predetermined number of wafers 30 are produced from the ingot 10. Note that the surface treated as the next irradiation surface 24 in the estimation step 208 is the surface obtained after the peeled surface 28 has been ground in the grinding step 212.

[0089] As described above, the detection method and device for detecting facet region 21 of ingot 10 according to the embodiment detects facet region 21-11 on the upper surface (first surface 11) of ingot 10 and facet region 21-12 on the lower surface (second surface 12) of ingot 10, and calculates an estimated position of facet region 21 inside ingot 10 based on these. The calculation of the estimated position of facet region 21 inside ingot 10 is performed in advance before wafers 30 are produced from ingot 10.

[0090] Furthermore, the method for producing the wafer 30 and the laser processing apparatus 100 estimate the positions of the facet regions 21-1, 21-2 on the irradiated surface 24 based on the estimated position of the facet region 21 inside the ingot 10 and the thickness from the lower surface (second surface 12) of the ingot 10 to the irradiated surface 24 (the height position of the irradiated surface 24 in the Z-axis direction). This eliminates the need to detect the facet region 21 every time the wafer 30 is peeled off, thereby contributing to improved productivity.

[0091] That is, in the past, when the number of wafers 30 produced from an ingot 10 was n and the detection time for the facet region 21 of the irradiation surface 24 was T minutes per surface, the detection time for one ingot 10 was n×T minutes. In contrast, in the embodiment, it is only necessary to detect two surfaces, the first surface 11 and the second surface 12, so that the detection time is 2×T minutes, which is a significant reduction in time compared to the past.

[0092] It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0093] For example, in the embodiment, it is assumed that the horizontal cross section of the facet region 21 inside the ingot 10 changes linearly, but in the present invention, the facet region 21 inside the ingot 10 may be estimated based on, for example, a change curve previously stored in the detection device.

[0094] In addition, in the first irradiation step 201 and the second irradiation step 204, in the embodiment, the fluorescence detection unit 120 is moved radially from the periphery of the ingot 10 toward the center by moving the holding unit 110 side, but in the present invention, the fluorescence detection unit 120 side may also be moved. [Explanation of symbols]

[0095] 10 Ingot (SiC single crystal ingot) 11 First Side 12 The Second Side 21, 21-1, 21-2, 21-11, 21-12 Facet Area 22 Non-faceted Area 23-1, 23-2, 23-3, 23-4, 23-5, 23-6 Detection position 24, 24-1, 24-2 Irradiation surface 25 Peeling layer 26 Modification Section 27 Crack 28 Peeling surface 30 wafers 100 Laser processing equipment (detection equipment) 110 Holding Unit 111 Holding surface 120 Fluorescence Detection Unit 121 light 122 Fluorescence 140 Laser beam irradiation unit 141 Laser Beam 142 Focus point 150 Mobile Units 160 display units 170 Control Unit 171 Judgment Department 172 Calculation section 173 Estimation Department 174 Setting section 180 Ultrasonic Oscillation Unit 185 Liquid Supply Unit 190 Grinding Unit

Claims

1. A method for detecting a facet region of a SiC single crystal ingot having a first surface and a second surface opposite to the first surface, comprising: A first irradiation step of irradiating the first surface of the SiC single crystal ingot with light from a light source; a first fluorescence detection step of detecting fluorescence generated from the first surface of the SiC single crystal ingot by the light irradiated onto the first surface, and obtaining a distribution of the number of photons of the fluorescence; a first determination step of determining, on the first surface, a region in which the number of photons of the fluorescence detected in the first fluorescence detection step is smaller than a predetermined value as a facet region, and determining, on the first surface, a region in which the number of photons of the fluorescence is equal to or greater than the predetermined value as a non-facet region; a second irradiation step of irradiating the second surface of the SiC single crystal ingot with light from a light source; a second fluorescence detection step of detecting fluorescence generated from the second surface of the SiC single crystal ingot by the light irradiated onto the second surface, and obtaining a distribution of the number of photons of the fluorescence; a second determination step of determining, on the second surface, a region in which the number of photons of the fluorescence detected in the second fluorescence detection step is smaller than a predetermined value as a facet region, and determining, on the second surface, a region in which the number of photons of the fluorescence is equal to or greater than the predetermined value as a non-facet region; a calculation step of calculating an estimated position of a facet region within the SiC single crystal ingot based on a region determined to be a facet region on the first surface in the first determination step and a region determined to be a facet region on the second surface in the second determination step; Characterized in that it has How to detect facet regions.

2. 2. A wafer production method for producing a wafer from a SiC single crystal ingot in which an estimated position of a facet region inside has been calculated by the facet region detection method according to claim 1, comprising: a laser beam irradiation step of irradiating the SiC single crystal ingot with a focal point of the laser beam having a wavelength that is transparent to the SiC single crystal ingot at a depth inside the SiC single crystal ingot that corresponds to a thickness of a wafer to be produced, and relatively moving the focal point and the SiC single crystal ingot in a direction parallel to the first surface to form a peeling layer in the SiC single crystal ingot; a peeling step of peeling a wafer to be produced from the SiC single crystal ingot using the peeling layer as an interface; a grinding step of grinding the peeled surface of the SiC single crystal ingot after the peeling step; having Prior to the laser beam irradiation step, an estimation step of estimating a position of a facet region on an irradiation surface of the laser beam based on an estimated position of a facet region inside the SiC single crystal ingot calculated in the calculation step and a thickness of the SiC single crystal ingot reduced by peeling a wafer from the SiC single crystal ingot; a setting step of setting the irradiation conditions of the laser beam irradiated onto the estimated facet region on the irradiation surface to irradiation conditions different from the irradiation conditions of the laser beam irradiated onto the non-facet region; Further comprising: A method for producing a wafer.

3. A detection device for detecting a facet region of a SiC single crystal ingot having a first surface and a second surface opposite to the first surface, the detection device comprising: a light source that irradiates the SiC single crystal ingot with light; a fluorescence detection unit that detects fluorescence generated from the first surface and the second surface by light irradiated onto the first surface and the second surface from the light source, and obtains a distribution of the number of photons of the fluorescence; a determination unit that determines a position of a facet region on the first surface and a position of a facet region on the second surface of the SiC single crystal ingot based on a distribution of the number of photons of the fluorescence detected by the fluorescence detection unit; a calculation unit that calculates an estimated position of a facet region within the SiC single crystal ingot based on the position of the facet region on the first surface and the position of the facet region on the second surface determined by the determination unit; The present invention is characterized in that it comprises Detection device.

4. A laser processing apparatus for forming a peeling layer on a SiC single crystal ingot having a first surface and a second surface opposite to the first surface, comprising: a light source that irradiates the SiC single crystal ingot with light; a fluorescence detection unit that detects fluorescence generated from the first surface and the second surface by light irradiated onto the first surface and the second surface from the light source, and obtains a distribution of the number of photons of the fluorescence; a holding unit having a holding surface for holding the SiC single crystal ingot; a laser beam irradiation unit that irradiates a laser beam having a wavelength that is transparent to the SiC single crystal ingot by positioning a focal point of the laser beam at a depth inside the SiC single crystal ingot that corresponds to a thickness of a wafer to be produced, thereby forming a peeled layer; a moving unit that relatively moves the holding unit and the focal point of the laser beam in a direction parallel to the holding surface; A control unit; Equipped with The control unit a determination unit that determines a position of a facet region on the first surface and a position of a facet region on the second surface of the SiC single crystal ingot based on a distribution of the number of photons of the fluorescence detected by the fluorescence detection unit; a calculation unit that calculates an estimated position of a facet region within the SiC single crystal ingot based on the position of the facet region on the first surface and the position of the facet region on the second surface determined by the determination unit; an estimation unit that estimates a position of a facet region on an irradiation surface of the laser beam based on an estimated position of a facet region inside the SiC single crystal ingot calculated by the calculation unit and a thickness of the SiC single crystal ingot reduced by peeling a SiC wafer from the SiC single crystal ingot; Characterized in that it comprises Laser processing equipment.

Images