Manufacturing method of electronic components, manufacturing film and manufacturing tools

Abstract

The purpose of the present invention is to provide a component manufacturing method of high assessment efficiency, and a component manufacturing film and a component manufacturing tool that are for use in the component manufacturing method. This method comprises: a step for arranging a plurality of electronic components on a support having a substrate and a holding layer with electrodes of the electronic components exposed via the holding layer; and a step for simultaneously performing energization assessment for electrical characteristics of 80 or more of the electronic components arranged on the support by bringing a probe into contact with all or some of the exposed electrodes. The component manufacturing film comprises a resin base layer, a holding layer provided to one surface side of the resin base layer, and a joint layer provided to the opposite surface side of the resin base layer so as to join the component manufacturing film to the substrate. The component manufacturing tool comprises a substrate and a holding layer provided to one surface of the substrate.

Description

[Technical field]

[0001] The present invention relates to a manufacturing method for electronic components in which electrical conductivity evaluation is performed simultaneously on a plurality of individualized electronic components, and to a film for manufacturing electronic components and an electronic component manufacturing tool used in the manufacturing method for electronic components. [Background technology]

[0002] It is desirable to be able to evaluate (inspect) electronic components (package components, semiconductor chips, etc.) individually during their manufacture, and to select them at each stage so that only those that pass the evaluation can be sent to the next process. In other words, the purpose is to improve yield and reduce costs by evaluating the components before they are sent to the next process and removing unsuitable parts. Known methods for performing this evaluation include a method that uses an evaluation mount called a socket (see Patent Document 1 below) and a technique that uses a holding film (see Patent Document 2 below). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2011-112552 [Patent Document 2] International Publication No. 2017 / 002610 Summary of the Invention [Problem to be solved by the invention]

[0004] In the above evaluation process, as in the entire electronic component manufacturing process, high efficiency that leads to cost reduction is required. In this respect, the method using sockets can achieve high evaluation efficiency when the types of electronic components to be evaluated are limited and have known specifications. However, sockets are specially designed for each electronic component to be measured, with a specific size and electrode position, and as electronic components become more diverse, the types of sockets used become more diverse. This causes problems such as a decrease in the degree of freedom for the measurement object and a decrease in evaluation efficiency. In other words, new sockets are required in accordance with new specifications of electronic components, so even test operation takes time, and for lots with different evaluation objects, a change in specifications is required to replace the sockets with the necessary ones, which reduces evaluation efficiency.

[0005] In contrast, the technology disclosed in the above Patent Document 2 uses a holding film common to the three processes of the evaluation process, the singulation process, and the pick-up process. By using this holding film, the socket can be eliminated, and the rate-limiting effect associated with the use of the socket can be eliminated. On the other hand, this technology is realized by using a characteristic material as the base layer of the holding film, and it has been found that when attempting to improve the evaluation efficiency, problems thought to be caused by the base layer material arise. In other words, it has been found that when evaluation is performed using this holding film, positional deviation may occur. This positional deviation tends to occur easily, especially when the number of evaluation objects is large and the measurement temperature is high.

[0006] The present invention has been made in consideration of the above problems, and has an object to provide a component manufacturing method with excellent evaluation efficiency, and a component manufacturing film and a component manufacturing tool used in the component manufacturing method. [Means for solving the problem]

[0007] As a means for solving the above problems, the present invention is as follows. [1] A step of arranging a plurality of electronic components on a support having a substrate and a support layer, with the support layer interposed therebetween, in a state in which electrodes are exposed; and an evaluation step of simultaneously connecting the exposed electrodes to probes and evaluating the electrical characteristics of 80 or more of the electronic components arranged on the support. [2] The method for manufacturing an electronic component according to the above [1], wherein the evaluation step is a step of performing the electrical conductivity evaluation in a state where the electronic component is heated. [3] The method for producing electronic components according to [1] or [2] above, further comprising a singulation step of singulating precursor electronic components on a support different from the support to obtain the electronic components prior to the placement step. [4] The method for manufacturing an electronic component according to any one of [1] to [3] above, wherein the retention layer has a property that the retention strength is reduced by the addition of heat or irradiation with energy rays. [5] The method for manufacturing an electronic component according to any one of [1] to [3] above, wherein the retention layer contains thermally expandable particles and has the property that its retention force decreases when heated. [6] The method for manufacturing an electronic component according to any one of [1] to [5] above, wherein the substrate is made of metal. [7] The support includes a film for component manufacturing attached to one surface side of the substrate, The film for manufacturing parts comprises a resin base layer and The support layer is provided on one side of the resin base layer; The method for manufacturing electronic components described in any one of [1] to [6] above, further comprising: a bonding layer provided on the opposing side of the resin base layer for bonding the component manufacturing film to the substrate. [8] The method for manufacturing an electronic component according to any one of [1] to [7] above, wherein the resin base layer has a linear thermal expansion coefficient of 100 ppm / K or less. [9] The method for manufacturing an electronic component according to any one of [1] to [8] above, wherein the resin base layer has a melting point of 180°C or higher and a tensile modulus E'(160) at a temperature of 160°C of 50 MPa or higher.

[10] The method for manufacturing an electronic component according to any one of [1] to [9] above, wherein the number of the electronic components arranged in the arrangement step is 100 or more.

[11] A film for component manufacturing used in the method for manufacturing electronic components according to any one of [1] to

[10] above, A resin base layer; The support layer is provided on one side of the resin base layer; A film for manufacturing components, comprising: a bonding layer provided on the opposing side of the resin base layer for bonding the film for manufacturing components to the substrate.

[12] A component manufacturing tool used in the method for manufacturing an electronic component according to any one of [1] to

[10] above, The substrate; and a retention layer provided on one surface of the substrate. Effect of the Invention

[0008] According to the method for producing electronic components of the present invention, and the film for producing electronic components and the tool for producing electronic components used in said method, electronic components with excellent evaluation efficiency can be produced. [Brief description of the drawings]

[0009] [Figure 1] FIG. 2 is an explanatory diagram for explaining a placement process and an evaluation process in the present invention. [Diagram 2] FIG. 2 is an explanatory diagram illustrating a film for manufacturing parts according to the present invention. [Diagram 3] FIG. 2 is an explanatory diagram illustrating a part manufacturing tool according to the present invention. [Figure 4] FIG. 2 is an explanatory diagram illustrating a singulation step in the present invention. [Diagram 5] FIG. 4 is an explanatory diagram illustrating details of the arrangement step in the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The present invention will be described below with reference to the drawings. The matters shown here are illustrative and are for illustrative purposes of the embodiments of the present invention, and are described for the purpose of providing what is believed to be the most effective and easy-to-understand explanation of the principles and conceptual features of the present invention. In this respect, it is not intended to show structural details of the present invention beyond a certain extent that are necessary for a fundamental understanding of the present invention, and the description in conjunction with the drawings will make it clear to those skilled in the art how some forms of the present invention are actually embodied.

[0011] [1] Manufacturing methods for electronic components The method for producing an electronic component of the present invention includes a step of arranging a plurality of electronic components 31 on a support 45 having a substrate 21 and a retaining layer 12 with the retaining layer 12 interposed therebetween in a state in which the electrodes 315 are exposed; and an evaluation step of simultaneously connecting the exposed electrodes 315 to probes and evaluating the electrical characteristics of 80 or more of the electronic components 31 arranged on the support 45 (see FIG. 1).

[0012] (1) Placement process The arrangement step is a step of arranging a plurality of electronic components 31 on a support 45 having a substrate 21 and a retaining layer 12 with the protective layer 12 interposed therebetween, with the electrodes 315 exposed (see FIG. 1(a)).

[0013] In the present invention, the electronic component 31 includes the following and . Semiconductor parts: Includes semiconductor chips obtained by dicing semiconductor wafers, silicon dies, etc. Packaged parts: Includes parts separated from a package array, packaged parts formed individually without going through a package array, etc. In addition, the sealing material for the packaged parts is not limited, and organic materials (resins) and inorganic materials (ceramics, crystallized glass, glass, etc.) can be used. Furthermore, packaged parts include those that do not undergo rewiring after sealing, those that use a fan-out method (eWLB method) that performs rewiring after sealing, and those that use a wafer-level chip size package (WLCSP) method.

[0014] The electronic component 31 described above has an electrode for electrically connecting to the outside. The electronic component 31 may have only one electrode, or may have multiple electrodes. The form of the electrode capable of electrically connecting to the outside is not limited, and for example, in semiconductor components, it includes pad electrodes, bonding electrodes, exposed surfaces of through electrodes, etc. In addition, in package components, it includes pad type electrodes, pin type electrodes, ball type electrodes, lead frame type electrodes, etc. That is, package components include PGA (Pin Grid Array) type, CPGA (Ceramic Pin Grid Array) type, PPGA (Plastic Pin Grid Array) type, SPGA (Staggered Pin Grid Array) type, BGA (Ball Grid Array) type, LGA (Land Grid Array) type, QFP (Quad Flat Package) type, PQFP (Plastic Quad Flat Package) type, QFN (Quad Flat Non-leaded) type, QFJ (Quad Flat J-leaded) type, PQFJ (Plastic Quad Flat J-leaded), TCP (Tape Carrier Package) type, CSP (Chip Size Package) type, etc.

[0015] Incidentally, there is usually no structural change in electronic component 31 after it has been subjected to the placement process and evaluation process. That is, electronic component 31 to be measured remains electronic component 31 even after it has been subjected to the placement process and evaluation process. However, in the method for manufacturing electronic components of the present invention, if electronic component 31 is subjected to another process after the evaluation process in which another configuration is added to electronic component 31, electronic component 31 to be measured can be said to be a precursor electronic component 31.

[0016] In the arrangement step, the electrodes 315 of the electronic component 31 are arranged in an exposed state so as to be electrically connected to the outside. That is, the electrodes 315 are arranged on the support 45 via the retaining layer 12 so as to be electrically connected to the outside. Therefore, the electrodes 315 are usually arranged so as not to be held by the retaining layer 12. The electrodes 315 may be arranged so as to be exposed to the side of the electronic component 31, but from the viewpoint of making it easier to contact with the probe, it is preferable to arrange the electrodes 315 so as to face upward of the retaining layer 12. That is, it is preferable to arrange the electrodes 315 so as to be located on the opposite side of the retaining layer 12 across the main body of the electronic component 31.

[0017] In the placement step, the number of electronic components 31 to be arranged is not limited, but since this method involves simultaneously conducting an electrical evaluation on at least 80 electronic components 31, the number of electronic components 31 to be arranged is usually 80 or more. The lower limit of this number can be, for example, 100 or more, or even 300 or more. On the other hand, the upper limit of the number of electronic components 31 to be arranged is not limited, but is usually 100,000 or less. The upper limit of this number can be, for example, 10,000 or less, or even 500 or less. Specifically, for example, the number can be 80 or more and 100,000 or less, 100 or more and 100,000 or less, 300 or more and 100,000 or less, 80 or more and 10,000 or less, 100 or more and 10,000 or less, 300 or more and 10,000 or less, 80 or more and 500 or less, 100 or more and 500 or less, or 300 or more and 500 or less.

[0018] When the electronic components 31 are arranged on the support 45, they are arranged on the holding layer 12. That is, the holding layer 12 is a layer for holding the electronic components 31, and the electronic components 31 are arranged on the holding layer 12. The support 45 is not limited to a specific embodiment other than that it has the substrate 21 and the retaining layer 12, and may utilize the film 10 for manufacturing components (see FIG. 2) and the tool 20 for manufacturing components (see FIGS. 3(a) and 3(b)) of the present invention, which will be described later. These will be described in detail later.

[0019] For example, as shown in FIG. 5, electronic components 31 arranged on a singulation support 40 described later may be electronic components 31 that have been evaluated (inspected) before the placement process. In this case, only electronic components 31 suitable for moving to the next process can be picked up from the singulation support 40 and arranged on the evaluation support 45. Then, for example, when only a part of electronic components 31 that have passed the evaluation on the singulation support 40 are moved onto the evaluation support 45, other electronic components 31 that have passed the evaluation on the singulation support 40 can be added to the empty space on the evaluation support 45. In this way, the space on the evaluation support 45 can be used without waste and simultaneous evaluation can be performed.

[0020] (2) Evaluation process This is a process for evaluating electrical characteristics of 80 or more of the electronic components 31 arranged on the support 45 by simultaneously connecting the exposed electrodes 315 to the probes 51 (see FIG. 1(b)). Here, each electronic component has multiple electrodes, but it is not necessary to connect all of them.

[0021] To further explain this evaluation step, it may include a connection step of electrically connecting the exposed electrodes of 80 or more electronic components among the electronic components having exposed electrodes to the probe, and an evaluation step of collectively evaluating the electrical characteristics of the 80 or more electronic components electrically connected to the probe. Therefore, the method for producing an electronic component of the present invention includes a step of arranging a plurality of electronic components on a support having a substrate and a support layer, with the support layer interposed therebetween, in a state in which electrodes are exposed; a connecting step of electrically connecting the exposed electrodes of at least 80 of the electronic components having exposed electrodes to the probe; and an evaluation step of collectively evaluating electrical characteristics of the 80 or more electronic components electrically connected to the probe.

[0022] Probe 51 is a member that is in electrical contact with exposed electrode 315 of electronic component 31. There are no limitations on the structure of probe 51, and any known structure may be used. For example, probe 51 may include an electrically conductive pin, an elastic body (coil spring, elastic resin, etc.) that adjusts the contact force between said conductive pin and electrode 315, a guide portion that regulates the movable direction of said conductive pin, etc. On the other hand, the electrodes 315 include outer lead electrodes of a lead frame, pin grid electrodes, ball grid electrodes (solder balls), land electrodes, and other electrode forms.

[0023] As described above, in this method, 80 or more electronic components are connected at the same time and the electrical conductivity is evaluated, so 80 or more sets of probes 51 are required. The number of probes included in one set is not limited, but is at least 1, and can be 10 or more, or even 100 or more (usually, the number of probes included in one set is 10,000 or less). These probes 51 can be provided integrally in a probe card 50 (a substrate with probes), for example. Of course, all or only some of the probes 51 may be used in the electrical conductivity evaluation. The electronic components 31 to be subjected to the electrical conductivity evaluation may be some of the electronic components 31 among all the electronic components arranged on the support 45, or may be all of the electronic components 31. This can be done according to necessity, but from the viewpoints of manufacturing efficiency and cost reduction, it is preferable to simultaneously connect as many electronic components 31 as possible and perform the electrical conductivity evaluation.

[0024] For example, as shown in FIG. 1(b), in the evaluation process, a probe card 50 having a plurality of probes 51 is brought into contact with exposed electrodes 315 of electronic components 31 arranged on a retaining layer 12 to establish an electrical connection, and a determination can be made as to whether a signal, for example, is correct or incorrect, exchanged between the probes 51 and a circuit formed on the electronic components 31 (probe test). Here, the exposed electrodes 315 and the probes 51 may be connected simultaneously between all the electrodes 315 and the probes 51, but may be connected to the electrodes 315 from the center of the probe card 50 toward the outer periphery, so that electrical connections with 80 or more electronic components 31 are completed at the time of the electrical conduction evaluation, or may be connected to the electrodes 315 from the outer periphery toward the center of the probe card 50, so that electrical connections with 80 or more electronic components 31 are completed at the time of the electrical conduction evaluation. That is, in the connection process, the electrodes 315 and the probes 51 may be connected simultaneously, or the electrodes 315 and the probes 51 may be connected temporarily, so that electrical connections between the electrodes 315 of 80 or more electronic components and the probes 51 may be completed by the time the electrical conduction evaluation starts.

[0025] The specific configuration of the probe card 50 is not limited, and a design according to the number of electronic components 31 to be simultaneously evaluated and the arrangement of the electronic components 31 on the support 45 can be used. In particular, the evaluation mechanism used in this method can use a large probe card equipped with many probes that can be simultaneously connected to multiple electrodes of multiple electronic components, 80 or more. In addition, if necessary, a small probe card can be provided so that individual evaluations can be performed, i.e., for example, a small probe card equipped with a small number of probes that can be simultaneously connected to multiple electrodes of one electronic component.

[0026] The contents and purposes of the energization evaluation are not limited, and examples of the contents and purposes include operation check and accelerated endurance test. More specifically, examples of the energization evaluation include DC tests that can evaluate the presence or absence of disconnection or short circuit, and can evaluate input voltage, output voltage, and output current, AC energization tests that can evaluate output waveforms, and functional tests such as evaluation of the possibility and speed of write and read operations, evaluation of retention time, and evaluation of mutual interference. In other words, examples of the energization evaluation include final tests, structured tests, scan tests, adaptive tests, etc. for packaged components, and wafer tests and burn-in tests for semiconductor components. These may be used alone or in combination of two or more types. In addition, in the electrical conduction evaluation, 80 or more electrically connected electronic components 31 can be evaluated at once. This evaluation may be performed simultaneously for the 80 or more electronic components 31, or may be performed sequentially. In other words, it is sufficient to be able to evaluate the 80 or more electronic components 31 without breaking the electrical connection between the electrodes 315 and the probes 51.

[0027] In the evaluation step in this manufacturing method, it is preferable to perform electrical conductivity evaluation with the electronic component 31 in a heated state. In this case, for example, the support 45 may be a support 45 in which the electronic component 31 is attached to the holding layer 12 of the component manufacturing tool 20. That is, the component manufacturing tool 20 is fixed to a vacuum chuck table (not shown) via the substrate 21. Then, the component manufacturing tool 20 (i.e., the support 45) is heated from the vacuum chuck table, whereby electrical conductivity evaluation of the electronic component 31 can be performed in a heated state.

[0028] The temperature range of the heating state in the evaluation step is not particularly limited and varies depending on the application of the electronic component 31. The lower limit of this temperature range can be, for example, 50° C. or higher, further 100° C. or higher, and further 150° C. or higher. On the other hand, the upper limit of this temperature range is usually 250° C. or lower.

[0029] When the electrical conductivity evaluation is performed in a heated state, for example, if a film-like support is used as the support, the position of the electronic component 31 may change due to thermal expansion when in a heated state. Such a change in the position of the electronic component 31 causes a positional deviation of the electronic component 31 with respect to the probe 51, and this positional deviation becomes larger as the number of electronic components 31 measured simultaneously increases, and becomes particularly noticeable when the number of electronic components 31 measured simultaneously is 80 or more.

[0030] For this reason, the present method utilizes a support 45 having a substrate 21. That is, examples of the support 45 include the following (A) and (B). (A) A support 45 including a substrate 21 and a film 10 for manufacturing components attached to one side of the substrate 21, the film 10 including a base layer (a resin base layer) 11, a retaining layer 12 provided on one side of the base layer 11, and a bonding layer 13 for the substrate 21 provided on the opposite side of the base layer 11 (see FIG. 3(a)). (B) A support 45 having a configuration including a substrate 21 and a support layer 12 provided on one side of the substrate 21 (see FIG. 3(b)). In this way, by providing the support 45 with the substrate 21, the substrate 21 can function to maintain the position of the electronic component 31, particularly the horizontal position of the electronic component 31 where a relative positional deviation with respect to the probe 51 is noticeable. In addition, in the above (B), a configuration other than the substrate 21 and the retaining layer 12 may be provided, but unlike (A), it may be configured without the base layer 11, and further, it may be configured only from the substrate 21 and the retaining layer 12.

[0031] These supports 45 can function to prevent the relative positional deviation between the electronic component 31 and the probe 51 even when heated. That is, for example, in the case of the support 45 having the configuration (A), the component manufacturing film 10 is attached to the substrate 21, a heat-resistant resin is used as the base layer 11 constituting the component manufacturing film 10, the thickness of the base layer 11 is increased, or other configurations are adopted to prevent the relative positional deviation between the electronic component 31 and the probe 51 when heated. Therefore, by using the above-mentioned (A) and / or (B) as support 45, simultaneous measurement of multiple electronic components 31 can be more reliably performed in the evaluation process, thereby further improving manufacturing efficiency.

[0032] (3) Other processes This method may include other steps in addition to the above-mentioned placement step and evaluation step, such as a singulation step for obtaining singulated electronic components 31 as a step preceding the placement step, and a pick-up step for separating electronic components 31 from support 45 as a step following the evaluation step.

[0033] Among the above-mentioned steps, the singulation step is a step of obtaining electronic components 31 by singulating (dicing) a precursor component 30 (such as an array-shaped electronic component or a semiconductor wafer) in which elements that will become a plurality of electronic components 31 are bonded. At this time, the singulation step can be performed by attaching a singulation support 40 to the back surface (see FIG. 4). The singulation step can be appropriately performed using a known method. In the singulation process, the singulation support 40 is attached to the rear surface of the frame body 41 so as to cover its opening, and the precursor part 30 is attached to the inside of this frame body 41 on the singulation support 40. The precursor parts 30 used in the singulation process have electrodes 315 formed on their surfaces. The electrodes are as described above. Semiconductor parts (wafers) usually have circuits formed on their surfaces. Examples of circuits include wiring, capacitors, diodes, and transistors. These may be used alone or in combination of two or more. Furthermore, when singulating, the packaged components may be singulated so that at least one semiconductor component (semiconductor chip) is included in one electronic component 31, or so that two or more semiconductor components (semiconductor chips) are included in one electronic component 31. The above-mentioned package array is a precursor component 30 in which a large number of semiconductor chips (silicon dies) are arranged and sealed, and refers to a form in which package components before being divided are included in the array.

[0034] On the other hand, in the above-mentioned cases, when only a portion of the electronic components 31 on the singulation support 40 are removed, or when the electronic components 31 on the singulation support 40 are removed one by one, the removed electronic components 31 can be arranged so as to be transferred onto the evaluation support 45 in the same arrangement as they are on the singulation support 40, or they can be arranged on the evaluation support 45 in a different arrangement than they are on the singulation support 40.

[0035] As described above, in conventional evaluations, sockets (evaluation mounts) were used, and when evaluating different electronic components or when different types of electronic components were mixed, it was necessary to change the sockets and change the specifications of the evaluation board each time. In contrast, in the present method, there is no need to use a socket, and a film or a substrate can be used as the film for manufacturing electronic components or the tool for manufacturing electronic components as the support 45. Therefore, in the present method, the tool cost associated with using a socket can be reduced. Furthermore, after electronic components 31 are directly arranged on support 45 so that electrodes 315 are exposed, the electrical characteristics of electronic components 31 can be evaluated using exposed electrodes 315. This does not require a change in the specifications of the evaluation board, suppresses an increase in man-hours, improves manufacturing efficiency, and reduces costs.

[0036] Furthermore, sockets usually have partitions (side walls) to define the placement position of the electronic component to be evaluated. For this reason, a space equivalent to the thickness of two partition walls provided in the socket is required on the evaluation board for each electronic component. For this reason, if one attempts to increase the number of electronic components to be evaluated at one time, the area occupied by the partition walls of the socket also increases on the measurement board. In other words, if one attempts to increase the number of simultaneous evaluations, there is a dilemma in that the area occupied by the partition walls increases, and there is a disadvantage in that it is difficult to increase the number of electronic components that can be placed. In contrast, in this method, electronic components 31 are arranged on support 45 so that electrodes 315 are exposed, and then the exposed electrodes 315 are used to evaluate the electrical characteristics of electronic components 31. In other words, because sockets are not used, partition walls can be eliminated, and electronic components 31 can be arranged in an area equivalent to the area occupied by the partition walls. This makes it possible to simultaneously evaluate a larger number of electronic components 31.

[0037] In addition, because the positions at which the electronic components are accommodated are not fixed by the sockets, there is a high degree of freedom in arranging the electronic components 31 on the support 45, and various types of electronic components can be arranged by optimizing calculations to increase the number of evaluations for each evaluation lot. That is, for example, the electronic components 31 can be arranged to maximize area efficiency, and, as will be described later, when a probe card is used, it can also be optimized to increase the number of simultaneous evaluations by the probe card.

[0038] In the method of the present invention, a probe is used for the current evaluation. For example, a probe card is placed above electronic components 31 arranged on support 45 so that electrodes 315 are exposed, and one or both of them are brought close to each other to cause current to flow through the probe card. Moreover, since electronic components 31 only need to be arranged with electrodes 315 exposed so as to be connectable to the outside, various different electronic components can be freely arranged on support 45. During electrical evaluation, for example, simultaneous evaluation is performed using a probe card to maximize the number of evaluations, and then electronic components that cannot be simultaneously evaluated can be individually evaluated while maintaining the state of support 45. Even in this case (even though the number of needle contacts increases), there is no need to stop the device to change evaluation boards as in the case of using sockets, and therefore excellent work efficiency can be obtained.

[0039] Furthermore, if necessary, in addition to the probe card, a single-shot measurement needle contact evaluation mechanism that can acquire images and adjust the position based on the acquired images can be provided. This allows electronic components with a large number of pieces to be simultaneously evaluated using the probe card, and electronic components with a small number of pieces to be individually evaluated by reading their positions.

[0040] [2] Film for parts manufacturing The film 10 for manufacturing components of the present invention (hereinafter, also referred to as "film 10" for short) is used by being bonded to one surface side of a substrate 21 in order to evaluate the electrical characteristics of an electronic component 31. This film 10 includes a resin base layer 11 (hereinafter also referred to as "base layer 11" for short), a support layer 12, and a bonding layer 13 (see FIG. 2). The support layer 12 is a layer provided on one surface side of the base layer 11 in order to support a plurality of electronic components 31 in an array. The bonding layer 13 is a layer provided on the opposite side of the base layer 11 in order to bond the film 10 to the substrate 21 . Each layer of film 10 will now be described.

[0041] (1) Base layer (resin base layer) The base layer 11 is a layer provided for the purpose of improving the handling properties and mechanical properties of the film 10 . The material used for the base layer 11 is not particularly limited, but is preferably one having mechanical strength sufficient to withstand the measurement environment in the evaluation process described below, and particularly one capable of suppressing thermal expansion and elongation in a heated state. Generally, a resin can be used as the material for the base layer 11.

[0042] Resins that can be used to form the base layer 11 include one or more thermoplastic resins selected from polyolefin-based resins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), poly(1-butene), etc.; aromatic polyester-based resins such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), etc.; polyimide-based resins such as semi-aromatic polyimide and aromatic polyimide; polyamide-based resins such as nylon-6, nylon-66, polymethaxylene adipamide, etc.; polyacrylate; polymethacrylate; polyvinyl chloride; polyetherimide; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; polyphenylene ether, etc.

[0043] Among the above-mentioned resins, in terms of suppressing positional deviation during heating in the evaluation process, when the resin has a melting point, the melting point is preferably 180°C or higher, more preferably 200°C or higher, and particularly preferably 220°C or higher. On the other hand, the melting point is preferably 800°C or lower, more preferably 600°C or lower, for example. Specifically, the melting point can be, for example, 180°C or higher and 800°C or lower, 200°C or higher and 800°C or lower, 220°C or higher and 800°C or lower, 180°C or higher and 600°C or lower, 200°C or higher and 600°C or lower, or 220°C or higher and 600°C or lower. The melting point is the melting peak temperature according to JIS K7121.

[0044] The linear thermal expansion coefficient of the base layer 11 is preferably 100 ppm / K or less (coefficient of thermal expansion at a temperature of 25 to 150°C). This makes it possible to more effectively prevent positional deviation in a heated state in the evaluation process. This value is usually 5 ppm / K or more. This linear thermal expansion coefficient is more preferably 90 ppm / K or less, and more preferably 50 ppm / K or less. This thermal expansion coefficient is a value measured in accordance with JIS K7197.

[0045] Furthermore, the tensile modulus E'(160) of the base layer 11 at a temperature of 160°C is preferably 50 MPa or more. This makes it possible to more effectively suppress positional deviation in a heated state in the evaluation process. This value is usually 5000 MPa or less. E'(160) is further preferably 100 MPa or more, and more preferably 200 MPa or more. The tensile modulus E'(160) can be measured by a dynamic mechanical analysis (DMA) (product name: RSA-3, manufactured by TA Instruments). Specifically, the sample size is set to a width of 10 mm, the length between chucks is set to 20 mm, and the measurement conditions are a frequency of 1 Hz and a heating rate of 5°C / min, and the data at 160°C is read from the data obtained by measuring from -20°C to 200°C.

[0046] Examples of resins that can satisfy all of the above heat resistance characteristics include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, etc. These may be used alone or in combination of two or more.

[0047] The above-mentioned resins may contain additives such as plasticizers, softeners (mineral oil, etc.), fillers (carbonates, sulfates, titanates, silicates, oxides (titanium oxide, magnesium oxide), silica, talc, mica, clay, fibrous fillers, etc.), antioxidants, light stabilizers, antistatic agents, lubricants, colorants, etc. These additives may be used alone or in combination of two or more.

[0048] The film used for the base layer 11 may be either unstretched or stretched, such as a uniaxially stretched film or a biaxially stretched film, regardless of whether it is stretched or not. The above-mentioned film may be either a single-layer film or a multi-layer film having a plurality of layers. It is preferable to use a surface-treated film for the base layer 11 from the viewpoint of improving adhesion between the support layer 12 and the bonding layer 13. Specific examples of the surface treatment include corona treatment, plasma treatment, undercoat treatment, and primer coat treatment. The thickness of the base layer 11 is not particularly limited, but can be, for example, 1 μm or more and 1000 μm or less, 5 μm or more and 500 μm or less, or 10 μm or more and 250 μm or less.

[0049] (2) Retention layer The holding layer 12 is a layer for holding a plurality of electronic components 31 in an array, and can be formed of, for example, an adhesive. The adhesive strength of the adhesive forming the retaining layer 12 is not particularly limited, but the 180° peel adhesive strength measured in accordance with JIS Z0237 except that the adherend is a silicon wafer when the adhesive is attached to the surface of the silicon wafer, left for 60 minutes, and then peeled off from the surface of the silicon wafer is preferably 0.1 N / 25 mm or more and 10 N / 25 mm or less. When the adhesive strength is in the above range, good adhesion to the electronic component 31 can be ensured. This adhesive strength is more preferably 0.2 N / 25 mm or more and 9 N / 25 mm or less, and even more preferably 0.3 N / 25 mm or more and 8 N / 25 mm or less. The above measured values ​​are values ​​measured by providing the retaining layer 12 on a separate biaxially stretched PET film having a thickness of 38 μm.

[0050] From the viewpoint of suitably picking up the electronic components 31, the holding layer 12 preferably has a property that the holding force is reduced by the addition of heat or irradiation with energy rays. The adhesive used in the retaining layer 12 is not particularly limited, but examples of adhesives having the above-mentioned characteristics include foaming type adhesives whose adhesive strength is reduced or lost by the addition of heat, and energy curing type adhesives whose adhesive strength is reduced or lost by irradiation with energy rays.

[0051] Both the foaming type adhesive and the energy curing type adhesive contain at least a main adhesive agent. Examples of the main adhesive agent include acrylic adhesives, silicone adhesives, rubber adhesives, etc. These may be used alone or in combination of two or more. Among these, acrylic adhesives are preferred.

[0052] Examples of the acrylic adhesive include a homopolymer of an acrylic ester compound, a copolymer of an acrylic ester compound and a comonomer, etc. These may be used alone or in combination of two or more kinds. Examples of the acrylic acid ester compound include methyl acrylate, ethyl acrylate, butyl acrylate, and 2-ethylhexyl acrylate. These may be used alone or in combination of two or more. Further, examples of the comonomer include vinyl acetate, acrylonitrile, acrylamide, styrene, methyl (meth)acrylate, (meth)acrylic acid, hydroxyethyl methacrylate, dimethylaminoethyl methacrylate, glycidyl methacrylate, and maleic anhydride.

[0053] The adhesive may contain a crosslinking agent in addition to the above-mentioned adhesive base agent. Examples of the crosslinking agent include epoxy crosslinking agents (pentaerythritol polyglycidyl ether, etc.) and isocyanate crosslinking agents (diphenylmethane diisocyanate, tolylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate, polyisocyanate, etc.). These crosslinking agents may be used alone or in combination of two or more. When the adhesive contains a crosslinking agent, the content of the crosslinking agent is preferably 10 parts by mass or less, with the total amount of the adhesive being 100 parts by mass. The adhesive strength of the adhesive can be adjusted by the content of the crosslinking agent. Specifically, the method described in JP 2004-115591 A can be used.

[0054] The foaming adhesive is an adhesive that can reduce or lose the adhesive strength of the retaining layer 12 to the electronic component 31 by foaming due to the addition of heat. Such a foaming adhesive can be realized by blending a heat-expanding foaming agent (hereinafter, simply referred to as a "foaming agent") in the adhesive. The foaming agent may be blended in the adhesive as it is, or may be incorporated by bonding with the adhesive, or may be used as heat-expanding particles such as heat-expanding microspheres in which the foaming agent is encapsulated in an outer shell (such as a microcapsule).

[0055] Among the above, the mechanism of the thermally expandable particles is not limited, but may be exemplified by the following (1) or (2). That is, (1) by heating, the contents of the thermally expandable particles are expanded, and the material constituting the outer shell is softened by the heating, and the entire thermally expandable particles are expanded, so that the volume of the thermally expandable particles in the adhesive can be increased. As a result, the adhesion area between the electronic components 31 held by the holding layer 12 and the adhesive is reduced, and the adhesive force of the holding layer 12 to the electronic components 31 can be reduced or lost. Also, (2) by heating, the contents of the thermally expandable particles are expanded, and the shell is destroyed by the expanded material, so that the volume of the expanded material in the adhesive can be increased. As a result, the adhesion area between the electronic components 31 held by the holding layer 12 and the adhesive is reduced, and the adhesive force of the holding layer 12 to the electronic components 31 can be reduced or lost. These mechanisms may be used alone or in combination. Furthermore, the mechanism by which the adhesive strength is reduced or lost by the thermally expandable particles is not limited to the above (1) and (2).

[0056] The foaming agent may be an inorganic foaming agent or an organic foaming agent, and may be used alone or in combination of two or more kinds. Among these, examples of inorganic foaming agents include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium boron hydroxide, various inorganic azide compounds (metal azide compounds, etc.), water, etc. These may be used alone or in combination of two or more. On the other hand, examples of organic blowing agents include fluorinated alkane compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; hydrazine compounds such as paratoluenesulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis(benzenesulfonylhydrazide) and allylbis(sulfonylhydrazide); semicarbazide compounds such as p-toluylenesulfonylsemicarbazide and 4,4'-oxybis(benzenesulfonylsemicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N-nitroso compounds such as N,N'-dinitrosopentamethylenetetramine and N,N'-dimethyl-N,N'-dinitrosoterephthalamide; organic azide compounds; and Meldrum's acid derivatives. These may be used alone or in combination of two or more. Furthermore, in particular, when the blowing agent is used as a thermally expandable particle, alkanes with a boiling point of 100°C or less, such as isobutane, propane, and pentane, can be used as a blowing agent by sealing them in a liquid state inside the shell. That is, any component that can be expanded by heating and vaporizing can be used. These can be used alone or in combination of two or more.

[0057] Examples of materials for forming the outer shell include vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, etc. These may be used alone or in combination of two or more.

[0058] Furthermore, when a foaming agent is used, the blending amount is not limited, but for example, when the adhesive main agent constituting the foaming type adhesive is 100 parts by mass, the foaming agent (particularly the thermally expandable particles) can be blended in an amount of 1 part by mass or more, further 5 parts by mass or more, and further 10 parts by mass or more. On the other hand, this blending amount can be, for example, 150 parts by mass or less, further 130 parts by mass or less, and further 100 parts by mass or less. Specifically, for example, it can be 1 part by mass or more and 150 parts by mass or less, 5 parts by mass or more and 150 parts by mass or less, 10 parts by mass or more and 150 parts by mass or less, 1 part by mass or more and 130 parts by mass or less, 5 parts by mass or more and 130 parts by mass or less, 10 parts by mass or more and 130 parts by mass or less, 1 part by mass or more and 100 parts by mass or less, 5 parts by mass or more and 100 parts by mass or less, 10 parts by mass or more and 100 parts by mass or less. In addition, in the foaming pressure-sensitive adhesive, the foaming temperature is preferably set to a temperature that exceeds the heating temperature in the evaluation step described below. Specifically, the foaming temperature can be more than 120°C, can be 135°C or higher, or can be 150°C or higher.

[0059] On the other hand, the energy curable pressure-sensitive adhesive is a pressure-sensitive adhesive whose adhesive strength can be reduced or lost by irradiating the pressure-sensitive adhesive with energy rays to cure the pressure-sensitive adhesive. Examples of the energy beam include ultraviolet rays, electron beams, infrared rays, etc. These energy beams may be used alone or in combination of two or more. Specifically, examples of the energy beam include ultraviolet-curable adhesives that are cured by ultraviolet rays.

[0060] In addition to the above-mentioned adhesive base, this energy curable adhesive can contain a compound having a carbon-carbon double bond in the molecule (hereinafter simply referred to as a "curable compound") and a photopolymerization initiator capable of initiating polymerization of the curable compound by reacting with energy rays. The curable compound is preferably a monomer, oligomer and / or polymer having a carbon-carbon double bond in the molecule and capable of being cured by radical polymerization. Specifically, examples of the curable compound include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, etc. These may be used alone or in combination of two or more. When the pressure-sensitive adhesive contains a curable compound, the content of the curable compound is preferably 0.1 to 20 parts by weight per 100 parts by weight of the pressure-sensitive adhesive.

[0061] The carbon-carbon double bond in the molecule may be included by the above-mentioned adhesive base agent having it in the molecule. That is, for example, the adhesive base agent can be an energy curable polymer having a carbon-carbon double bond in a side chain. In this way, when the adhesive base agent has a curable structure in the molecule, the above-mentioned curable compound may or may not be blended.

[0062] As the photopolymerization initiator, a compound capable of generating radicals upon irradiation with energy rays is preferable. Specific examples include acetophenone-based photopolymerization initiators {methoxyacetophenone, etc.}, α-ketol compounds {4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxycyclohexylphenyl ketone, etc.}, ketal compounds {benzyl dimethyl ketal, etc.}, benzoin-based photopolymerization initiators {benzoin, benzoin alkyl ethers (benzoin methyl ether, benzoin isopropyl ether, benzoin isobutyl ether), etc.}, benzophenone-based photopolymerization initiators {benzophenone, benzoylbenzoic acid, etc.}, aromatic ketals {benzyl dimethyl ketal, etc.}, etc. These may be used alone or in combination of two or more. When the pressure-sensitive adhesive contains a photopolymerization initiator, the content of the photopolymerization initiator is preferably 5 to 15 parts by mass relative to 100 parts by mass of the pressure-sensitive adhesive.

[0063] Of the foaming type adhesive and the energy curing type adhesive described above, the foaming type adhesive is preferred for the retaining layer 12 from the viewpoint of being able to effectively pick up the electronic components 31 that have risen to the surface of the retaining layer 12 and from the viewpoint of compatibility with the bonding layer 13 described below, and furthermore, the use of thermally expandable particles is particularly preferred. The thickness of the retaining layer 12 is not particularly limited, but can be, for example, 1 μm or more and 1000 μm or less, further 3 μm or more and 500 μm or less, further 5 μm or more and 250 μm or less, and further 10 μm or more and 150 μm or less.

[0064] (3) Bonding layer The bonding layer 13 is a layer for bonding the film 10 to the substrate 21, and is formed from an adhesive. The thickness of this bonding layer 13 can be, for example, 1 μm or more and 1000 μm or less, further 3 μm or more and 500 μm or less, further 5 μm or more and 250 μm or less, and further 10 μm or more and 150 μm or less.

[0065] The adhesive used for the bonding layer 13 is not particularly limited, and any adhesive may be used as long as it can bond the film 10 to the substrate 21 described below. Generally, this adhesive contains at least a main adhesive agent. As this main adhesive agent, the same ones as those mentioned above for the support layer 12 can be used.

[0066] For the adhesive of the bonding layer 13, the energy curing adhesives listed for the support layer 12 above can be used. In particular, when a foaming type adhesive is used for the retaining layer 12, the object to be peeled off can be selected as desired by selecting either heat application or energy ray irradiation. For example, if a foaming adhesive is used for the retaining layer 12 and an energy-curing adhesive is used for the bonding layer 13, only the electronic components 31 can be peeled off when heat is applied, and when energy rays are irradiated, the film 10 can be peeled off from the substrate 21 with the electronic components 31 still retained.

[0067] The adhesive strength of the adhesive forming the bonding layer 13 is not particularly limited, but the 180° peel adhesive strength measured in accordance with JIS Z0237 when the adhesive is attached to stainless steel, left for 60 minutes, and then peeled off from the surface of the stainless steel can be 0.1 N / 25 mm or more and 50 N / 25 mm or less, further 0.2 N / 25 mm or more and 25 N / 25 mm or less, and further 0.3 N / 25 mm or more and 8 N / 15 mm or less. The above measured values ​​are values ​​measured by providing the bonding layer 13 on a separate biaxially stretched PET film having a thickness of 38 μm.

[0068] (4) Other layers The film 10 of the present invention may consist of only the base layer 11, the support layer 12 and the bonding layer 13, but may also include other layers. Examples of the other layers include an interface strength improving layer that improves the interface strength with the pressure-sensitive adhesive, and a migration prevention layer that suppresses migration of low molecular weight components from the base layer 11 to the support layer 12. These may be used alone or in combination of two or more.

[0069] [3] Parts manufacturing tools The component manufacturing tool 20 of the present invention (see Figs. 3(a) and 3(b)) is used for simultaneously evaluating the electrical characteristics of electronic components 31 in a heated state. The component manufacturing tool 20 includes a substrate 21 and a retaining layer 12 (see Figs. 3(a) and 3(b)). The holding layer 12 is a layer provided on one surface of the substrate 21 in order to hold a plurality of electronic components 31 in an array. Specifically, the component manufacturing tool 20 can be constructed by bonding the above-mentioned film 10 to one surface side of a substrate 21 via the above-mentioned bonding layer 13 .

[0070] (1) Circuit Board The substrate 21 is provided for the purpose of placing the electronic component 31 at an appropriate measurement position in the evaluation process described below. The material of the substrate 21 is not particularly limited, but is preferably hard enough not to bend during the evaluation process. For this reason, the material of the substrate 21 may be metal materials such as stainless steel, aluminum, iron, copper, etc.; non-metallic inorganic materials such as glass, fine ceramics, silicon wafers, etc.; resin materials, etc. These may be used alone or in combination of two or more. Among the above, examples of the resin material include the various resins listed as materials constituting the resin base layer 11 (base layer 11) constituting the film 10 for manufacturing parts. For example, the Young's modulus of the substrate 21 can be 10 GPa or more. Furthermore, the thickness of the substrate 21 is not limited, but can be, for example, 1 mm or more and 500 mm or less, 2 mm or more and 250 mm or less, and further 3 mm or more and 150 mm or less.

[0071] As described above, the component manufacturing tool 20 is not limited to a configuration in which the film 10 is bonded, but may be configured by providing only the support layer 12 on one surface side of the substrate 21, as shown in FIG. 3(b). In this case, the support layer 12 may be made of the same adhesive as that used for the support layer 12 of the film 10 described above. [Industrial Applicability]

[0072] The method for manufacturing electronic components, the film for manufacturing electronic components, and the tool for manufacturing electronic components of the present invention are widely used in the manufacture of electronic components. In particular, they have the property of enabling simultaneous measurement of a plurality of electronic components, and are suitably used for manufacturing components with excellent productivity. [Explanation of symbols]

[0073] 10; Film for parts manufacturing, 11; base layer, 12; retention layer, 13; bonding layer, 20; Parts manufacturing tools, 21; Substrate, 30; precursor parts, 31;Electronic components, 315;electrode, 40; Support (support for singulation), 41;frame; 45: Support (support for evaluation), 50; probe card, 51;Probe.

Claims

1. an arrangement step of arranging a plurality of electronic components on a support having a substrate and a support layer with the support layer interposed therebetween in a state in which electrodes are exposed; and an evaluation step of simultaneously connecting the exposed electrodes and probes to perform an electrical evaluation of electrical characteristics of 80 or more of the electronic components arranged on the support, The material of the substrate is at least one of stainless steel, aluminum, iron, copper, glass, fine ceramics, and a silicon wafer; The method for manufacturing an electronic component, wherein the retaining layer contains thermally expandable particles and has a property that the retaining force is reduced by heating.

2. A process for arranging a plurality of electronic components on a support having a substrate and a support layer, with the support layer interposed therebetween, in a state in which electrodes are exposed; and an evaluation step of simultaneously connecting the exposed electrodes and probes to perform an electrical evaluation of electrical characteristics of 80 or more of the electronic components arranged on the support, The support includes a film for component manufacturing attached to one surface side of the substrate, The film for manufacturing parts comprises a resin base layer and The support layer is provided on one side of the resin base layer; a bonding layer provided on the opposite side of the resin base layer for bonding the component manufacturing film to the substrate.

3. 3. The method for manufacturing an electronic component according to claim 1, wherein the evaluation step is a step of performing the energization evaluation while the electronic component is heated.

4. The method for manufacturing an electronic component according to claim 1 , further comprising a singulation step of singulating precursor electronic components on a support different from the support to obtain the electronic components, prior to the placement step.

5. 5. The method for manufacturing an electronic component according to claim 1, wherein the retention layer has a property that the retention force is reduced by application of heat or irradiation with energy rays.

6. The method for manufacturing an electronic component according to claim 2 , wherein the retaining layer contains thermally expandable particles and has a property that the retaining force is reduced by heating.

7. A method for manufacturing an electronic component as described in claim 1 or 6, wherein the heating temperature is greater than 120°C.

8. A method for manufacturing an electronic component described in any of claims 1 to 7, wherein the adhesive forming the retaining layer is attached to the surface of a silicon wafer and left for 60 minutes, and then has a 180° peel adhesive strength when peeled off from the surface of the silicon wafer of 0.1 N / 25 mm or more and 10 N / 25 mm or less.

9. The method for manufacturing an electronic component according to any one of claims 1 to 8, wherein the substrate is made of metal.

10. The support includes a film for component manufacturing attached to one surface side of the substrate, The film for manufacturing parts comprises a resin base layer and The support layer is provided on one side of the resin base layer; The method for manufacturing an electronic component according to claim 1 , further comprising: a bonding layer provided on an opposite side of the resin base layer for bonding the component manufacturing film to the substrate.

11. A method for manufacturing an electronic component as described in claim 2 or 10, wherein the adhesive forming the bonding layer is attached to stainless steel and left for 60 minutes, and then has a 180° peel adhesive strength of 0.1 N / 25 mm or more and 50 N / 25 mm or less when peeled from the surface of the stainless steel.

12. 12. The method for producing an electronic component according to claim 2, 10 or 11, wherein the resin base layer has a linear thermal expansion coefficient of 100 ppm / K or less.

13. 13. The method for producing an electronic component according to claim 2, 10, 11 or 12, wherein the resin base layer has a melting point of 180° C. or higher and a tensile modulus E'(160) at a temperature of 160° C. of 50 MPa or higher.

14. 14. The method for manufacturing an electronic component according to claim 1, wherein the number of the electronic components arranged in the arrangement step is 100 or more.

15. A film for component manufacturing used in the method for manufacturing an electronic component according to any one of claims 1 to 14, A resin base layer; The support layer is provided on one side of the resin base layer; A film for manufacturing electronic components, comprising: a bonding layer provided on the opposing side of the resin base layer for bonding the film for manufacturing electronic components to the substrate.

16. A component manufacturing tool used in the method for manufacturing an electronic component according to any one of claims 1 to 14, The substrate; the support layer provided on one surface of the substrate.

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