Method for fabricating transistors having high electron mobility and fabricated transistors

Abstract

A method for fabricating a transistor with high electron mobility is described, providing a transistor with high electron mobility. The method involves first growing an epitaxial layer on a flat substrate and then completely removing the flat substrate from the bottom surface of the epitaxial layer. A thermally conductive layer is then applied to the bottom surface of the epitaxial layer so that the thermally conductive layer contacts at least 80%, preferably at least 90%, particularly preferably at least 95%, and particularly preferably 100% of the bottom surface of the epitaxial layer. This method can be easily and cost-effectively implemented and provides a transistor with high electron mobility, enhanced power without a back gate, and improved heat dissipation. The described method can also provide a transistor with a vertical transistor structure.

Description

[Technical field]

[0001] A method for manufacturing a transistor with high electron mobility is described, which provides a transistor with high electron mobility. The method first grows an epitaxial layer on a flat substrate, and then completely removes the flat substrate again from the bottom surface of the epitaxial layer. Here, a thermally conductive layer is applied to the bottom surface of the epitaxial layer such that the thermally conductive layer contacts at least 80%, preferably at least 90%, particularly preferably at least 95%, particularly 100% of the bottom surface of the epitaxial layer. The method can be easily and cost-effectively performed, and provides a transistor with high electron mobility, enhanced power without a backgate, and improved heat dissipation. The described method can further provide a transistor with a vertical transistor structure. [Background technology]

[0002] GaN is a broadband semiconductor with a wide bandgap. It is ideally suited for power electronic devices. Due to the fact that the use of negative GaN wafers as substrates for component epitaxy becomes very expensive, other solutions utilizing cheaper substrates such as silicon are widely used.

[0003] Conventional high electron mobility transistors (HEMTs) are fabricated on SiC or Si substrates as lateral components. Despite the advantages of lateral 2DEG channels in GAN / AlGaN components, a vertical architecture would be preferable for power applications due to its positive effects on circuit design and passive components.

[0004] GaN-based HEMT structures are known in the art and are commercially available. The HEMT structure consists of an active surface that includes an AlGaN barrier on a GaN channel layer. A thick GaN layer doped with carbon or iron acts as an insulating barrier to the backside. Below the AlGaN / GaN interface, a two-dimensional electron gas ("2DEG" for short) is generated due to band bending caused by differences in the band gap and polarization fields. The 2DEG forms a highly conductive channel laterally, resulting in faster switching lateral components that outperform other conventional power components.

[0005] Silicon substrates, although considered cost-effective, come with many drawbacks and are located underneath the entire structure. Silicon substrates have a high thermal and structural mismatch with the GaN lattice. It is therefore known that a thick stack of several layers ("buffer layers") must be deposited to absorb the strain and match the lattice. These buffer layers must be properly tailored to avoid significant bowing of the wafer, which cannot be tolerated in the later processing of the component. Furthermore, the incompatibility of the foreign material results in a large number of defects and dislocations (typically 10 9 / cm 2 ) which are known to be detrimental to the power (output) of components.

[0006] As a result, lattice and strain accommodation layers such as thicker insulating buffer layers and channel layers are limiting and hindering further development, which are unavoidable on Si substrates. AlGaN barriers with high aluminum content would be a desirable development to achieve multi-kV output.

[0007] Furthermore, not only is the electrical conductivity of the Si substrate and floating potential a problem, which can lead to back-gating and failures due to component failures, but heat dissipation is also a major issue. The thermal conductivity of the Si substrate is insufficient, and a thick Si substrate cannot dissipate heat well. To avoid this, thinning must be performed, which is dangerous in terms of chip breakage. Also, as a result of the insertion of strain and defect accommodation layers, the vertical thermal conductivity is further reduced.

[0008] As for vertical GaN components, the component concept with GaN on Si wafers is simply not possible, since the many additional layers required act as potential barriers and significantly impede vertical current flow.

[0009] Moreover, it is known that the presence of a conductive Si substrate just a few μm below the active channel creates a strong back-gate effect. This prevents lateral co-integration of component structures with high potential differences between each other, such as the integration of semi- or full-bridge structures. Successful integration is only possible when the direct coupling of the substrate bias to the transistor channel is effectively suppressed. For example, it is known to achieve such integration by implementing GaN transistors on a silicon-on-insulator (SOI) layer with GaN epitaxy on top of it. This allows monolithic integration, but at the expense of thermal conductivity, which is a significant drawback when using SOI as the insulating medium.

[0010] The results showed that the presence of the Si substrate itself was detrimental to the performance of GaN power components, and that even greater output power could be expected if the Si substrate were completely removed.

[0011] Recently, a new solution has been proposed that involves locally removing the Si substrate under the gate. It has so far yielded excellent performance, making it possible to operate the transistor at up to 3 kV (Dogmus, E. & Zegaoui, M., Appl. Phys. Expr., Volume 11, pg. 034102 et seq, 2018). However, the technique of localized removal in some areas is very complicated, and in other areas the Si substrate is still present. The localized sputtering of the AlN backside in the removed areas is complicated, and in addition to the residual Si substrate, the presence of localized AlN filled areas also makes a difference in the mechanical behavior of the chip in the later packaging route. Summary of the Invention [Problem to be solved by the invention]

[0012] It is therefore an object of the present invention to provide a method that makes it possible to provide transistors that do not have the drawbacks known from the prior art, in particular a method that can be easily and cost-effectively implemented and that makes it possible to provide transistors with high electron mobility, improved power without a backgate and improved heat dissipation, in particular a method that allows the implementation of vertical transistor structures.

[0013] That object is achieved by a method comprising the features of claim 1 and by a transistor with high electron mobility with the features of claim 14. The dependent claims show advantageous refinements. [Means for solving the problem]

[0014] According to the present invention, there is provided a method for fabricating a transistor having high electron mobility, comprising the steps of: a) i) to be removable from the epitaxial layer by chemical and / or dry etching; and / or ii) it can be removed from the epitaxial layer by laser radiation having a specific wavelength; growing an epitaxial layer including or consisting of a semiconductor material on the front side of a suitable planar substrate; b) providing at least one lateral and / or vertical transistor structure on the front side of the epitaxial layer; c) attaching a temporary wafer to the front side of the epitaxial layer; d) removing the flat substrate from the bottom surface of the epitaxial layer; e) applying a thermally conductive layer to the bottom surface of the epitaxial layer; f) Completely remove the temporary wafer. The flat substrate is completely removed from the bottom surface of the epitaxial layer; The heat conducting layer is applied to the bottom surface of the epitaxial layer such that the heat conducting layer contacts at least 80%, preferably at least 90%, particularly preferably at least 95%, in particular 100% of the bottom surface of the epitaxial layer.

[0015] The front side of the epitaxial layer is understood to mean the side of the epitaxial layer opposite the flat substrate. A temporary wafer (provisional wafer) is understood to mean a wafer which is first applied to the front side of the epitaxial layer in the process according to the invention and which is then removed again during the process. 100% contact to the bottom side of the epitaxial layer is understood to mean that the bottom side of the epitaxial layer is contacted by the thermally conductive layer over its entire surface.

[0016] The method for providing a transistor is relatively easy to perform and cost-effective, allowing the provision of a transistor with a low inductance package and a circuit with a simple design. The method is characterized by a complete removal (i.e. 100% removal) of the flat substrate from the epitaxial layer, for example by lift-off and / or etching. In comparison with the case of merely locally removing the substrate from the epitaxial layer known in the prior art, a number of advantages are obtained, since no residues of the substrate or substrate layer remain on the bottom surface of the epitaxial layer. In other words, a thermally conductive layer can be applied to the bottom surface of the epitaxial layer over a large area. This improves the transfer of heat from the epitaxial layer to the thermally conductive layer. It increases the heat dissipation capacity of the transistor and increases the performance capacity of the transistor, especially over long operating periods.

[0017] Completely removing the substrate from the bottom surface of the epitaxial layer is further advantageous because the entire bottom surface of the epitaxial layer has the same properties for attaching (e.g., by bonding) multiple additional layers and has a higher mechanical stability of the bottom surface of the epitaxial layer. This increases the overall mechanical stability of the transistor. Furthermore, completely removing the substrate increases the electron mobility of the epitaxial layer and improves power (without a backgate). In particular, no buffer layer is deposited between the flat substrate and the epitaxial layer, which can create a higher vertical breakdown voltage for both lateral and vertical transistors. This is because the breakdown is a function of the thickness of the buffer layer or the thickness of the n-drift layer.

[0018] The method is as follows: the epitaxial layer is GaN, AlN, Al x Ga 1-x N (x is a number from 0 to 1), InGaN, InAlGaN, AlScN, Ga 2 O 3and combinations thereof. In particular, the semiconductor material preferably comprises or consists of GaN. The semiconductor material may optionally include doping, in particular doping with an element selected from the group consisting of Si, Ge, O, C, Fe, Mn, and combinations thereof.

[0019] Furthermore, the method can be characterized by growing the epitaxial layer in the direction of the flat substrate to a height in the range of 200 nm to 50 μm.

[0020] Additionally, the epitaxial layer may have an extension of 25.4 mm to 300 mm in a direction parallel to the flat substrate.

[0021] The flat substrate used in the method is a substrate on which epitaxially grown GaN, AlN, Al, or other x Ga 1-x N (x is a number from 0 to 1), InGaN, InAlGaN, AlScN, Ga 2 O 3 The layer may be adapted to include or comprise a material selected from the group consisting of:

[0022] Furthermore, the planar substrate used in the method can comprise or consist of a material selected from the group consisting of silicon carbide, sapphire, combinations thereof, and mixtures thereof. Preferably, the material is selected from the group consisting of silicon carbide and sapphire. The deposition of GaN heterostructures on sapphire or silicon carbide is very well established. Compared to epitaxy on silicon substrates, it has an order of magnitude lower dislocation density (5×10 for sapphire). 7 ~1×10 8 cm -2 , and with SiC, 10 6 cm -2(order of magnitude) is achieved. This has a favorable impact on the performance and reliability of the transistor. Also, since the structural match between GaN on sapphire or SiC is generally closer compared to GaN on silicon, the deposition of a thick buffer layer that allows for lattice mismatch is not required. The advantage of using sapphire as a material for the flat substrate is that flat sapphire substrates can be obtained in a cost-effective manner, thereby providing transistors more cost-effectively and therefore more economically. Due to the better structural match between GaN and sapphire, the residual voltage in the transistor is lower. Furthermore, sapphire has a high material resistance to higher epitaxial temperatures, which provides greater flexibility in terms of epitaxial processing windows or layer thicknesses.

[0023] The method may be characterized in that the flat substrate has a height in the direction of the epitaxial layer in the range of 100 μm to 1.5 mm.

[0024] The method may include applying at least one front electrical contact to a top surface of the epitaxial layer, where applying the at least one front electrical contact is preferably performed after applying to the epitaxial layer at least one lateral and / or vertical structure selected from the group consisting of a transistor, a Schottky diode structure, a PN diode structure, a PIN diode structure, and combinations thereof, or after removal of the temporary wafer.

[0025] 10 -6 Ωm~10 -8 At least one front electrical contact may be provided using a material having a conductivity in the Ωm range.

[0026] Additionally, at least one front electrical contact may be provided using a material having a thermal conductivity in the range of 10 to 2300 W / (m·K).

[0027] Furthermore, at least one front electrical contact can be applied using a material comprising or consisting of a metal, particularly preferably a metal selected from the group consisting of Au, Ag, Al, Pt, Ir, Ni, Cr, Ta, Mo, V, and alloys thereof.

[0028] Furthermore, the at least one front electrical contact may be applied such that the at least one front electrical contact has a height in the direction of the epitaxial layers in the range of 50 nm to 10 μm.

[0029] Alternatively, at least one front electrical contact may be applied by deposition or bonding.

[0030] The method may be characterized in that at least one lateral and / or vertical transistor structure is applied in the form of a layer.

[0031] The lateral and / or vertical transistor structures are made of semiconductor material, preferably optionally doped Al. x Ga 1-x N (x is a number from 0 to 1) and / or Ga 2 O 3 It may comprise or consist of:

[0032] Also, lateral and / or vertical transistor structures can be processed, preferably after attaching the structure to the epitaxial layer or after removing the temporary wafer, and the processing steps include methods selected from the group consisting of demetallization, wet chemical etching, dry chemical etching, dielectric coating, ion implantation, diffusion, and combinations thereof.

[0033] The temporary wafer may be attached to the front side of the epitaxial layer by adhesive on the temporary wafer.

[0034] Complete removal of the flat substrate from the bottom surface of the epitaxial layers can be achieved by chemical etching, dry etching, and combinations thereof. If the substrate is transparent to the laser light of the laser used, i.e., laser ablation cannot be performed, it must be etched away.

[0035] Also, complete removal of the planar substrate from the bottom surface of the epitaxial layer can be achieved by lift-off of the planar substrate by laser radiation having a specific wavelength, preferably by laser radiation having a specific wavelength.

[0036] The conductive layer on the bottom surface of the epitaxial layer can include or consist of a material having a particular thermal conductivity in the range of 10 to 2300 W / (m·K).

[0037] Also, a thermally conductive layer is or can be attached to the bottom surface of the epitaxial layer by deposition or bonding.

[0038] In a preferred embodiment, the thermally conductive layer on the bottom surface of the epitaxial layer comprises or consists of an electrically insulating material, preferably the electrically insulating material has a thermal conductivity of at least 10 10 It has a specific electrical resistivity of Ωm. The electrically insulating material may be selected from the group consisting of AlN, TaC, SiN, diamond, and combinations thereof, preferably the material is polycrystalline. Alternatively, the electrically insulating material may have a height in the direction of the epitaxial layer in the range of 20 μm to 1.5 mm.

[0039] In an alternative preferred embodiment, the thermally conductive layer on the bottom surface of the epitaxial layer comprises or consists of an electrically conductive material, preferably the material has a conductivity of 2×10 -4 The specific electrical resistivity is less than Ωm. The conductive material is the n of the epitaxial layer. +The doped regions can be contacted. Furthermore, the conductive material can comprise or consist of a semiconductor material and / or a metal, particularly preferably a semiconductor material selected from the group consisting of Si, Ge, and combinations thereof. Apart from this, the conductive material can have a height in the direction of the epitaxial layer ranging from 50 nm to 5 μm. An alternative embodiment of the method can provide a vertical transistor architecture. As a result, all the potential advantages of a vertical transistor compared to a lateral transistor are achieved. This is not possible with known GaN-on-Si components, because it requires the use of local substrate removal techniques, with all the inherent disadvantages.

[0040] The method according to the invention can include applying at least one rear electrical contact to the bottom surface of the epitaxial layer. Preferably, the rear electrical contact is applied to the bottom surface of the epitaxial layer after removing the planar substrate and, optionally, after removing localized regions of the thermally conductive layer. Further, the rear electrical contact can be applied to the bottom surface of the epitaxial layer at a density of 2×10 -4 The rear electrical contact may comprise or consist of a material having a specific electrical resistivity of Ω·m or less. Furthermore, the rear electrical contact may comprise or consist of a material having a specific thermal conductivity in the range of 150-380 W / (m·K). Alternatively, the rear electrical contact may comprise or consist of a semiconductor material and / or metal, particularly preferably a semiconductor material selected from the group consisting of Si, Ge, and combinations thereof.

[0041] Complete removal of the temporary wafer from the top surface of the epitaxial layer can be accomplished by a method selected from the group consisting of laser lift-off, wet chemical etching, dry chemical etching, thermal methods, thermally activated Smart Cut, and combinations thereof. Optionally, one of these removal methods is combined with ion implantation.

[0042] According to the present invention, a) an epitaxial layer including or consisting of a semiconductor material; b) at least one lateral and / or vertical transistor structure on a top surface of the epitaxial layer; c) a thermally conductive layer on a bottom surface of the epitaxial layer; and Equipped with The thermally conductive layer on the bottom surface of the epitaxial layer contacts at least 80%, preferably at least 90%, particularly preferably at least 95%, and in particular 100% of the bottom surface of the epitaxial layer; A transistor having high electron mobility is provided.

[0043] The transistor does not exhibit a backgate, is free of buffer stacks for lattice and strain matching, backside conductivity, heat dissipation, uncontrolled backside potential, and problems arising from a static backgate, i.e., the transistor does not have the typical drawbacks of known transistors, including AlGaN-GaN HEMTs on Si substrates, and exhibits the advantage of increased design flexibility, since multiple functions, such as full-bridge and half-bridge modules, bidirectional switching transistors, drivers, etc., can be integrated into one transistor.

[0044] Also, the thermal resistance of the transistor according to the present invention is significantly improved, reducing the possibility of leakage or breakdown mechanisms related to the poor insulating properties of carbon-doped GaN. Moreover, the structure of the transistor is less complicated.

[0045] Apart from this, the total power of the transistor is higher, since lateral GaN-on-Si transistors produced only by local removal of the substrate already show a 3 kV operation, i.e. a power that already exceeds the operation of real SiC components. With the transistor according to the invention, a total power of more than 3 kV is possible.

[0046] The method according to the invention allows the production of a transistor according to the invention. This means that the transistor according to the invention can have the features which the transistor necessarily has as a result of carrying out the method according to the invention. The features mentioned above in relation to the method according to the invention can consequently also be features of the transistor according to the invention. [Brief description of the drawings]

[0047] [Figure 1] A series of methods for fabricating lateral or vertical thin film power transistors are presented. [Diagram 2] A schematic diagram of the epitaxial layers of a lateral GaN HEMT is shown. [Diagram 3] A schematic diagram of a lateral GaN HEMT transferred onto an insulating and thermally conductive AlN wafer is shown. [Figure 4] A schematic diagram of a vertical GaN FinFET transferred onto an electrically and thermally conductive substrate is shown. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0048] Without limiting the subject matter to the specific embodiments shown herein, the subject matter of the present invention will now be explained in more detail on the basis of the following drawings, in which:

[0049] Figure 1 shows a method sequence for manufacturing lateral or vertical thin-film power transistors. After the epitaxy 1 of the transistor is performed on a substrate, the complete front-end processing of the transistor 2 is performed. This is followed by bonding 3 to a temporary wafer, after which the substrate is completely removed 4. Then, during the manufacturing of a lateral transistor, method step A is performed, in which bonding 5a to an electrically insulating thermally conductive substrate is performed. Then, during the manufacturing of a vertical transistor, method step B is performed, in which a back contact step and a bonding step 5b to an electrically conductive thermally conductive substrate are performed. In both cases A and B, the detachment 6 of the temporary wafer finally follows.

[0050] FIG. 2 shows a schematic diagram of the epitaxial layers of a lateral GaN HEMT. Multiple buffer layers 8 are disposed on a conductive Si substrate 7 for lattice and strain matching. An insulating GaN:C layer 9 is disposed on the multiple buffer layers 8. A GaN UID layer 10 acting as a channel is disposed on the insulating GaN:C layer 9, and an AlGaN UID layer 12 acting as a barrier is disposed on the GaN UID layer 10. Here, a 2DEG layer 11 is formed between the GaN UID layer 10 and the AlGaN UID layer 12.

[0051] 3 shows a schematic diagram of a lateral GaN HEMT transferred onto an insulating, thermally conductive AlN wafer. The AlN wafer 13 is connected to a GaN-based buffer 15 via a bonded interface 14. An AlGaN barrier 16 is disposed on the GaN-based buffer 15. The source 17, gate 18, and drain 19 are located on the AlGaN barrier 16.

[0052] FIG. 4 shows a schematic diagram of a vertical GaN FinFET transferred onto an electrically and thermally conductive substrate. A conductive Si or metal wafer 20 is connected to the drain contact 21 via a bonded interface 14. + A -GaN drain layer 22 is present on the drain contact 21 and - The -GaN drift zone 23 is n + The GaN-Fin structure 24, the source contact 25, the gate metal 26, and the gate insulator 27 are on the n-GaN drain layer 22. - -GaN drift zone 23. [Explanation of symbols]

[0053] 1: Transistor epitaxy 2: Transistor complete front-end processing 3: Bonding to a temporary substrate (e.g., a temporary wafer) 4: Complete removal of the substrate 5a: Bonding to an electrically insulating, thermally conductive substrate 5b: Back contact and bonding to electrically conductive and thermally conductive substrate 6: Detachment of the temporary substrate (e.g., temporary wafer) 7: Si substrate (conductive) 8: Multiple buffer layers (lattice and strain matching) 9: GaN:C (insulating) 10: GaNUID (Channel) 11: 2DEG 12: AlGaNUID (barrier) 13: AlN wafer 14: Bonding interface 15: GaN-based buffer 16: AlGaN barrier 17: Source 18: Gate 19: Drain 20: Conductive Si or metal wafer 21: Drain contact 22: n + -GaN drain 23: n - -GaN Drift Zone 24: GaN-Fin structure 25: Source Contact 26: Gate metal 27: Gate insulator A: Method steps during the manufacture of a lateral transistor B: Method steps during the manufacture of a vertical transistor

Claims

1. 1. A method for fabricating a transistor having high electron mobility, comprising the steps of: a) i) to be removable from the epitaxial layer by chemical and / or dry etching; and / or ii) it can be removed from the epitaxial layer by laser radiation having a specific wavelength; growing said epitaxial layer comprising or consisting of a semiconductor material on the front side of a suitable planar substrate; b) applying at least one lateral and / or vertical transistor structure to the front side of said epitaxial layer; c) attaching a temporary wafer to the front side of the epitaxial layer; d) removing the planar substrate from a bottom surface of the epitaxial layer; e) applying a thermally conductive layer to the bottom surface of the epitaxial layer; f) completely removing the temporary wafer; 1. A method comprising: the planar substrate is completely removed from the bottom surface of the epitaxial layer; the thermally conductive layer is applied to the bottom surface of the epitaxial layer such that the thermally conductive layer contacts at least 80% of the bottom surface of the epitaxial layer; the epitaxial layer comprises or consists of a semiconductor material selected from the group consisting of GaN, AlN, Al x Ga 1-x N (x is a number from 0 to 1), InGaN, InAlGaN, AlScN, Ga 2 O 3 , and combinations thereof; The thermally conductive layer on the bottom surface of the epitaxial layer comprises: i) a material that is electrically insulating and is selected from the group consisting of TaC, diamond, and combinations thereof, and has a height in the direction of the epitaxial layer in the range of 20 μm to 1.5 mm; or ii) a material that is electrically conductive and has a height in the direction of the epitaxial layer in the range of 50 nm to 5 μm; or consisting of said material, method.

2. The epitaxial layer is i) grown in the direction of the flat substrate to a height in the range of 200 nm to 50 μm; and / or ii) having an extension in a direction parallel to said flat substrate of between 25.4 mm and 300 mm; The method of claim 1.

3. The flat substrate comprises: i) GaN, AlN, and Al to be epitaxially grown ｘ G １－ｘ N (x is a number from 0 to 1), InGaN, InAlGaN, AlScN, Ga ２ O ３ and / or is adapted to provide a layer comprising or consisting of a material selected from the group consisting of ii) comprising or consisting of a material selected from the group consisting of silicon carbide, AlN, sapphire, combinations thereof, and mixtures thereof; The method according to claim 1 or 2.

4. the flat substrate has a height in the direction of the epitaxial layer in the range of 100 μm to 1.5 mm; 4. The method according to claim 1 .

5. The method includes applying at least one front electrical contact to a top surface of the epitaxial layer, the applying of the at least one front electrical contact comprising: i) after attachment to the front surface of the epitaxial layer of at least one lateral and / or vertical structure selected from the group consisting of transistors, Schottky diode structures, PN diode structures, PIN diode structures, and combinations thereof, or after removal of the temporary wafer; and / or ii) 10 －６ Ωm~10 －８ using materials with a conductivity in the Ωm range, and / or iii) using a material with a thermal conductivity in the range of 10 to 2300 W / (mK); and / or iv) using a material that contains or consists of a metal, and / or v) said at least one front electrical contact has a height in the direction of said epitaxial layer in the range of 50 nm to 10 μm; and / or vi) by deposition or bonding, To be executed, 5. The method according to any one of claims 1 to 4.

6. The at least one lateral and / or vertical transistor structure comprises: i) applied in the form of a layer; ii) comprises or consists of a semiconductor; and / or iii) processing, the processing being performed after applying the at least one lateral and / or vertical transistor structure to the epitaxial layer or after removing the temporary wafer, the processing step comprising a method selected from the group consisting of demetallization, wet chemical etching, dry chemical etching, dielectric coating, ion implantation, diffusion, and combinations thereof; 6. The method according to any one of claims 1 to 5.

7. the temporary wafer is attached to the front side of the epitaxial layer by adhesive bonding; 7. The method according to any one of claims 1 to 6.

8. Complete removal of the planar substrate from the bottom surface of the epitaxial layer is achieved by: i) chemical etching, dry etching, and combinations thereof; and / or ii) lifting off the planar substrate by laser radiation having a specific wavelength; 8. The method according to any one of claims 1 to 7.

9. The thermally conductive layer on the bottom surface of the epitaxial layer comprises: i) comprises or consists of a material having a specific thermal conductivity in the range of 10 to 2300 W / (mK); and / or ii) applied or attached by deposition or bonding; 9. The method according to any one of claims 1 to 8.

10. The electrically insulating material has a resistance of at least 10 １０ It has a specific electrical resistivity of Ωm.

10. The method according to any one of claims 1 to 9.

11. The conductive material is i) 2 x 10 －４ and / or has a specific electrical resistivity of less than or equal to Ωm; ii) n of the epitaxial layer ＋ contacting the doped region; and / or iii) comprises or consists of a semiconductor material and / or a metal; 10. The method according to any one of claims 1 to 9.

12. The method includes applying at least one rear electrical contact to the bottom surface of the epitaxial layer, the rear electrical contact comprising: i) applied to the bottom surface of the epitaxial layer after removing the flat substrate; and / or ii) 2 x 10 －４ and / or iii) comprises or consists of a material having a specific thermal conductivity in the range of 150 to 380 W / (mK); and / or iv) comprises or consists of semiconductor materials and / or metals; 12. The method according to any one of claims 1 to 11.

13. complete removal of the temporary wafer from the top surface of the epitaxial layer by a method selected from the group consisting of a laser lift-off method, a wet chemical etching method, a dry chemical etching method, a thermal method, a thermally activated Smart Cut method, and combinations thereof; 13. The method according to any one of claims 1 to 12.

14. A transistor having high electron mobility, a) an epitaxial layer including or consisting of a semiconductor material; b) at least one lateral and / or vertical transistor structure on a top surface of the epitaxial layer; c) a thermally conductive layer on a bottom surface of the epitaxial layer; and Equipped with the thermally conductive layer on the bottom surface of the epitaxial layer contacts at least 80% of the bottom surface of the epitaxial layer; the epitaxial layer comprises or consists of a semiconductor material selected from the group consisting of GaN, AlN, Al x Ga 1-x N (x is a number from 0 to 1), InGaN, InAlGaN, AlScN, Ga 2 O 3 , and combinations thereof; The thermally conductive layer on the bottom surface of the epitaxial layer comprises: i) a material that is electrically insulating and is selected from the group consisting of TaC, diamond, and combinations thereof, and has a height in the direction of the epitaxial layer in the range of 20 μm to 1.5 mm; or ii) a material that is electrically conductive and has a height in the direction of the epitaxial layer in the range of 50 nm to 5 μm; or consisting of said material, Transistor.

Images