Calibration device and calibration method

A calibration device with multiple light sources and a reflective member addresses the inefficiencies in existing calibration methods for light emitting spectroscopic analyzers in plasma processing devices, enabling precise calibration and improved plasma monitoring.

JP7660021B2Active Publication Date: 2025-04-10TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2021073983
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-04-26
Publication Date
2025-04-10
Estimated Expiration
2041-04-26

AI Technical Summary

Technical Problem

Existing calibration methods for light emitting spectroscopic analyzers in plasma processing devices are inefficient, as they lack a reliable and precise means to calibrate the analyzers for monitoring plasma.

Method used

A calibration device comprising a plate-shaped base substrate with multiple light sources of different wavelengths, a reflective member, and a control device is used. The light sources emit light that is reflected towards the outside of the base substrate, increasing the intensity of light incident on the spectroscopic analyzer, which can then be calibrated using this reference light.

Benefits of technology

The calibration device effectively increases the intensity of light incident on the spectroscopic analyzer, allowing for precise calibration of the analyzer to monitor plasma in plasma processing devices accurately.

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Abstract

To provide a technique of correcting a light emission spectroscopic analyzer that monitors plasma generated in a plasma processor.SOLUTION: A correction device according to an exemplary embodiment includes: a tabular base substrate; a plurality of light emission devices on the base substrate, the light emission devices emitting light with different wavelengths; a reflection member arranged above the base substrate, the reflection member reflecting light emitted from the light emission devices, to the outside of the base substrate in planer view; and a controller arranged in the base substrate, the controller controlling the light emission devices.SELECTED DRAWING: Figure 5
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Description

[Technical field]

[0001] Exemplary embodiments of the present disclosure relate to a calibration apparatus and method. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus, in which an optical emission spectrometer monitors changes in the wavelength spectrum of plasma light generated within the plasma processing apparatus. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-65013 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for calibrating an optical emission spectrometry instrument that monitors plasma generated in a plasma processing apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment, a tool for calibrating an optical emission spectrometer that monitors plasma generated in a plasma processing apparatus is provided. The tool includes a plate-shaped base substrate, a plurality of light sources, a reflecting member, and a control device. The plurality of light sources are disposed on the base substrate, and emit light of different wavelengths from one another. The reflecting member is disposed on the base substrate, and reflects the light emitted by the plurality of light sources toward the outside of the base substrate in a plan view. The control device is disposed on the base substrate, and controls the plurality of light sources. Effect of the Invention

[0006] A calibration apparatus according to one exemplary embodiment is capable of calibrating an optical emission spectrometry apparatus that monitors plasma generated in a plasma processing apparatus. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 illustrates a processing system. [Diagram 2] FIG. 2 is a perspective view illustrating an aligner. [Diagram 3] FIG. 1 illustrates an example of a plasma processing apparatus. [Figure 4] FIG. 2 is a plan view of an example calibration device as seen from the top side. [Diagram 5] FIG. 5 is a cross-sectional view of FIG. 4 . [Figure 6] FIG. 2 is a block diagram illustrating an example calibration device. [Figure 7] FIG. 2 is a schematic diagram for explaining an acceleration sensor of an example calibration device. [Figure 8] 1 is an example of a graph illustrating acceleration applied to an example calibration device. [Figure 9] 11 is a diagram showing an example of a transport path of a calibration device transported through a processing system; [Figure 10] 1 is an example of a transfer recipe utilized in an example calibration apparatus. [Figure 11] 4 is a flow chart illustrating an example of a method of operation of the calibration device. [Figure 12] 13A and 13B are diagrams for explaining a light emitting device according to another example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, a calibration device is provided that calibrates an optical emission spectrometer that monitors plasma generated in a plasma processing apparatus. The calibration device includes a plate-shaped base substrate, a plurality of light sources, a reflecting member, and a control device. The plurality of light sources are disposed on the base substrate, and emit light of different wavelengths from one another. The reflecting member is disposed on the base substrate, and reflects the light emitted by the plurality of light sources toward the outside of the base substrate in a planar view. The control device is disposed on the base substrate, and controls the plurality of light sources.

[0010] In the calibration device of the above embodiment, the control device controls the multiple light sources so that light is emitted from the multiple light sources while the calibration device is placed on a stage provided in the plasma processing device. The light emitted from the multiple light sources is reflected by the reflecting member toward the outside of the base substrate in a plan view. In the plasma processing device, if a window that allows light to enter the optical emission spectrometer is provided on the side of the stage, the light from the light sources reflected by the reflecting member is more likely to enter the optical emission spectrometer. In other words, the intensity of the light entering the optical emission spectrometer becomes higher. Since the light from the multiple light sources can be used as a reference for calibration, the optical emission spectrometer that monitors the plasma generated in the plasma processing device can be calibrated.

[0011] In one exemplary embodiment, each of the plurality of light sources is an LED light source.

[0012] In one exemplary embodiment, the base substrate is disk-shaped and includes a notch on a portion of its periphery. If the processing system includes an aligner for controlling the rotational position of the wafer, the rotational position of the calibration device can be controlled by the aligner.

[0013] In one exemplary embodiment, the multiple light sources are arranged in a circumferential direction along the periphery of the base substrate, and in this configuration, when the plasma processing apparatus has a window on the side of the stage through which light is incident on the optical emission spectrometer, any of the multiple light sources can be brought close to the window.

[0014] In one exemplary embodiment, the apparatus may further include an acceleration sensor disposed on the base substrate. The control device may recognize a transport position of the calibration device within the plasma processing device based on an output value of the acceleration sensor, and may cause the multiple light sources to emit light when it is recognized that the calibration device has been transported to a predetermined position. In this configuration, the multiple light sources can be caused to emit light at the timing when the calibration device is transported onto the stage by the transport device.

[0015] In one exemplary embodiment, a calibration device is provided that calibrates an optical emission spectrometer that monitors plasma generated in a plasma processing apparatus. The calibration device includes a plate-shaped base substrate, a plurality of light sources, and a control device. The plurality of light sources are disposed on the base substrate, and emit light of different wavelengths. The control device controls the plurality of light sources. The optical axes of the light sources are directed toward the outside of the base substrate in a plan view.

[0016] In the calibration device of the above embodiment, the control device controls the multiple light sources so that light is emitted from the multiple light sources while the calibration device is placed on a stage provided in the plasma processing device. The light emitted from the multiple light sources is irradiated toward the outside of the base substrate in a plan view. In the plasma processing device, if a window that allows light to enter the optical emission spectrometer is provided on the side of the stage, the light from the light sources is more likely to enter the optical emission spectrometer. In other words, the intensity of the light entering the optical emission spectrometer becomes higher. Since the light from the multiple light sources can be used as a reference for calibration, the optical emission spectrometer that monitors the plasma generated in the plasma processing device can be calibrated.

[0017] In one exemplary embodiment, there is provided a method for calibrating an optical emission spectrometer that monitors plasma generated in a plasma processing apparatus using a calibration device. The calibration device may be any of the calibration devices described above. The method includes a step of transporting the calibration device into the plasma processing apparatus by a transport device. The method also includes a step of causing multiple light sources of the calibration device transported into the plasma processing apparatus to emit light, and a step of measuring intensity data of light emitted from the multiple light sources by the optical emission spectrometer. The method also includes a step of calibrating the optical emission spectrometer based on the intensity data.

[0018] Various embodiments will be described in detail below with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0019] The calibration apparatus according to one exemplary embodiment can be transported by a processing system 1 having a function as a semiconductor manufacturing apparatus S1. First, a processing system having a processing apparatus for processing a workpiece and a transport apparatus for transporting the workpiece to the processing apparatus will be described. FIG. 1 is a diagram illustrating the processing system. The processing system 1 includes stages 2a-2d, containers 4a-4d, a loader module LM, an aligner AN, load lock modules LL1 and LL2, process modules PM1-PM6, a transfer module TF, and a controller MC. Note that the numbers of stages 2a-2d, containers 4a-4d, load lock modules LL1 and LL2, and process modules PM1-PM6 are not limited, and may be any number equal to or greater than one.

[0020] The stages 2a to 2d are arranged along one edge of the loader module LM. The containers 4a to 4d are mounted on the stages 2a to 2d, respectively. Each of the containers 4a to 4d is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers 4a to 4d can be configured to accommodate a workpiece W. The workpiece W has a substantially disk shape, such as a wafer.

[0021] The loader module LM has a chamber wall that defines a transfer space therein under atmospheric pressure. A transfer device TU1 is provided in this transfer space. The transfer device TU1 is, for example, an articulated robot, and is controlled by a control unit MC. The transfer device TU1 is configured to transfer the workpiece W between the containers 4a-4d and the aligner AN, between the aligner AN and the load lock modules LL1-LL2, and between the load lock modules LL1-LL2 and the containers 4a-4d.

[0022] The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust (calibrate) the position of the workpiece W. FIG. 2 is a perspective view illustrating the aligner. The aligner AN has a support table 6T, a drive unit 6D, and a sensor 6S. The support table 6T is a table that can rotate about an axis extending in the vertical direction, and is configured to support the workpiece W thereon. The support table 6T is rotated by the drive unit 6D. The drive unit 6D is controlled by the control unit MC. When the support table 6T rotates by the power from the drive unit 6D, the workpiece W placed on the support table 6T also rotates.

[0023] The sensor 6S is an optical sensor, and detects the edge of the workpiece W while the workpiece W is being rotated. From the edge detection result, the sensor 6S detects the amount of deviation of the angular position of the notch WN (or another marker) of the workpiece W relative to the reference angular position, and the amount of deviation of the center position of the workpiece W relative to the reference position. The sensor 6S outputs the amount of deviation of the angular position of the notch WN and the amount of deviation of the center position of the workpiece W to the control unit MC. Based on the amount of deviation of the angular position of the notch WN, the control unit MC calculates the amount of rotation of the support table 6T for correcting the angular position of the notch WN to the reference angular position. The control unit MC controls the drive unit 6D to rotate the support table 6T by this amount of rotation. This allows the angular position of the notch WN to be corrected to the reference angular position. The control unit MC may also correct the angular position of the notch WN to an arbitrary angular position. In addition, the control unit MC controls the position of the end effector of the transport device TU1 when receiving the workpiece W from the aligner AN, based on the deviation of the center position of the workpiece W. This causes the center position of the workpiece W to coincide with a predetermined position on the end effector of the transport device TU1.

[0024] 1, each of the load lock modules LL1 and LL2 is provided between the loader module LM and the transfer module TF. Each of the load lock modules LL1 and LL2 provides a preliminary reduced pressure chamber.

[0025] The transfer module TF is airtightly connected to the load lock modules LL1 and LL2 via gate valves. The transfer module TF provides a decompression chamber capable of reducing pressure. A transfer device TU2 is provided in this decompression chamber. The transfer device TU2 is, for example, an articulated robot having a transfer arm TUa, and is controlled by a control unit MC. The transfer device TU2 is configured to transfer a workpiece W between the load lock modules LL1-LL2 and the process modules PM1-PM6, and between any two of the process modules PM1-PM6.

[0026] The process modules PM1 to PM6 are airtightly connected to the transfer module TF via gate valves. Each of the process modules PM1 to PM6 is a processing device configured to perform a dedicated process such as a plasma process on the workpiece W.

[0027] A series of operations when the workpiece W is processed in the processing system 1 is exemplified as follows. The transfer device TU1 of the loader module LM takes out the workpiece W from one of the containers 4a to 4d and transfers the workpiece W to the aligner AN. Then, the transfer device TU1 takes out the workpiece W whose position has been adjusted from the aligner AN and transfers the workpiece W to one of the load lock modules LL1 and LL2. Then, one of the load lock modules reduces the pressure in the preliminary decompression chamber to a predetermined pressure. Then, the transfer device TU2 of the transfer module TF takes out the workpiece W from one of the load lock modules and transfers the workpiece W to one of the process modules PM1 to PM6. Then, one or more of the process modules PM1 to PM6 process the workpiece W. Then, the transfer device TU2 transfers the processed workpiece W from the process module to one of the load lock modules LL1 and LL2. Next, the transfer device TU1 transfers the workpiece W from one of the load lock modules to any one of the containers 4a to 4d.

[0028] As described above, the processing system 1 includes a control unit MC. The control unit MC may be a computer including a processor, a storage device such as a memory, a display device, an input / output device, a communication device, etc. The series of operations of the processing system 1 described above are realized by the control unit MC controlling each part of the processing system 1 according to a program stored in the storage device.

[0029] Fig. 3 is a diagram showing an example of a plasma processing apparatus that can be employed as any one of the process modules PM1 to PM6. The plasma processing apparatus 10 shown in Fig. 3 is a capacitively coupled plasma etching apparatus. The plasma processing apparatus 10 includes a chamber body 12 having a substantially cylindrical shape. The chamber body 12 is made of, for example, aluminum, and an inner wall surface thereof may be anodized. The chamber body 12 is safety grounded.

[0030] A substantially cylindrical support 14 is provided on the bottom of the chamber body 12. The support 14 is made of, for example, an insulating material. The support 14 is provided within the chamber body 12 and extends upward from the bottom of the chamber body 12. A stage ST is provided within a chamber S provided by the chamber body 12. The stage ST is supported by the support 14.

[0031] The stage ST has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of a metal such as aluminum and have a substantially disk shape. The second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.

[0032] An electrostatic chuck ESC is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which an electrode, which is a conductive film, is disposed between a pair of insulating layers or insulating sheets, and has a substantially disk shape. A DC power supply 22 is electrically connected to the electrode of the electrostatic chuck ESC via a switch 23. The electrostatic chuck ESC attracts the workpiece W by electrostatic force such as Coulomb force generated by a DC voltage from the DC power supply 22. This allows the electrostatic chuck ESC to hold the workpiece W.

[0033] A focus ring FR is provided on the peripheral portion of the second plate 18b so as to surround the edge of the workpiece W and the electrostatic chuck ESC. The focus ring FR may be made of any of a variety of materials, such as silicon, silicon carbide, or silicon oxide.

[0034] A coolant flow passage 24 is provided inside the second plate 18b. The coolant flow passage 24 constitutes a temperature adjustment mechanism. A coolant is supplied to the coolant flow passage 24 from a chiller unit provided outside the chamber body 12 via a pipe 26a. The coolant supplied to the coolant flow passage 24 is returned to the chiller unit via a pipe 26b. In this manner, the coolant is circulated between the coolant flow passage 24 and the chiller unit. By controlling the temperature of this coolant, the temperature of the workpiece W supported by the electrostatic chuck ESC is controlled.

[0035] A plurality of (for example, three) through holes 25 are formed in the stage ST and pass through the stage ST. The plurality of through holes 25 are formed inside the electrostatic chuck ESC in a plan view. A lift pin 25a is inserted into each of the through holes 25. Note that FIG. 3 illustrates one through hole 25 into which one lift pin 25a is inserted. The lift pin 25a is provided so as to be movable up and down within the through hole 25. As the lift pin 25a rises, the workpiece W supported on the electrostatic chuck ESC rises.

[0036] A plurality of (e.g., three) through holes 27 penetrating the stage ST (lower electrode LE) are formed in the stage ST at positions outside the electrostatic chuck ESC in a plan view. A lift pin 27a is inserted into each of the through holes 27. Note that FIG. 3 illustrates one through hole 27 into which one lift pin 27a is inserted. The lift pin 27a is provided so as to be movable up and down within the through hole 27. As the lift pin 27a rises, the focus ring FR supported on the second plate 18b rises.

[0037] The plasma processing apparatus 10 is also provided with a gas supply line 28. The gas supply line 28 supplies a heat transfer gas, for example, He gas, from a heat transfer gas supply mechanism to between the upper surface of the electrostatic chuck ESC and the back surface of the workpiece W.

[0038] The plasma processing apparatus 10 also includes an upper electrode 30. The upper electrode 30 is disposed above the stage ST and faces the stage ST. The upper electrode 30 is supported on the upper part of the chamber body 12 via an insulating shielding member 32. The upper electrode 30 may include a top plate 34 and a support 36. The top plate 34 faces the chamber S, and is provided with a plurality of gas ejection holes 34a. The top plate 34 may be made of silicon or quartz. Alternatively, the top plate 34 may be formed by forming a plasma-resistant film such as yttrium oxide on the surface of an aluminum base material.

[0039] The support 36 detachably supports the top plate 34 and may be made of a conductive material such as aluminum. The support 36 may have a water-cooled structure. A gas diffusion chamber 36a is provided inside the support 36. A plurality of gas flow holes 36b that communicate with the gas discharge holes 34a extend downward from the gas diffusion chamber 36a. The support 36 is also formed with a gas inlet 36c that introduces a process gas into the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas inlet 36c.

[0040] A gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow rate controller group 44. The gas source group 40 includes a plurality of gas sources for a plurality of types of gas. The valve group 42 includes a plurality of valves, and the flow rate controller group 44 includes a plurality of flow rate controllers such as mass flow controllers. The plurality of gas sources in the gas source group 40 are connected to the gas supply pipe 38 via the corresponding valves in the valve group 42 and the corresponding flow rate controllers in the flow rate controller group 44.

[0041] Furthermore, in the plasma processing apparatus 10, a deposit shield 46 is detachably provided along the inner wall of the chamber body 12. The deposit shield 46 is also provided on the outer periphery of the support part 14. The deposit shield 46 prevents etching by-products (deposits) from adhering to the chamber body 12, and may be formed by coating an aluminum material with ceramics such as yttrium oxide.

[0042] An exhaust plate 48 is provided on the bottom side of the chamber body 12 and between the support 14 and the side wall of the chamber body 12. The exhaust plate 48 can be made, for example, by coating ceramics such as yttrium oxide on an aluminum material. A plurality of holes are formed in the exhaust plate 48, penetrating in the plate thickness direction. An exhaust port 12e is provided below the exhaust plate 48 and in the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a pressure adjustment valve and a vacuum pump such as a turbo molecular pump, and can reduce the pressure of the space in the chamber body 12 to a desired vacuum level. In addition, a load / unload port 12g for the workpiece W is provided on the side wall of the chamber body 12, and the load / unload port 12g can be opened and closed by a gate valve 54.

[0043] The plasma processing apparatus 10 further includes a first high frequency power supply 62 and a second high frequency power supply 64. The first high frequency power supply 62 is a power supply that generates a first high frequency for generating plasma, and generates a high frequency having a frequency of, for example, 27 to 100 MHz. The first high frequency power supply 62 is connected to the upper electrode 30 via a matching device 66. The matching device 66 has a circuit for matching the output impedance of the first high frequency power supply 62 with the input impedance on the load side (upper electrode 30 side). The first high frequency power supply 62 may be connected to the lower electrode LE via the matching device 66.

[0044] The second high frequency power supply 64 is a power supply that generates a second high frequency for attracting ions into the workpiece W, and generates a high frequency with a frequency within a range of, for example, 400 kHz to 13.56 MHz. The second high frequency power supply 64 is connected to the lower electrode LE via a matching device 68. The matching device 68 has a circuit for matching the output impedance of the second high frequency power supply 64 with the input impedance on the load side (the lower electrode LE side).

[0045] In the plasma processing apparatus 10, gas is supplied to the chamber S from one or more selected gas sources among a plurality of gas sources. The pressure in the chamber S is set to a predetermined pressure by the exhaust device 50. The gas in the chamber S is excited by a first high frequency wave from the first high frequency power supply 62. This generates plasma. The workpiece W is then processed by the generated activated species. If necessary, ions may be attracted to the workpiece W by a bias based on the second high frequency wave from the second high frequency power supply 64.

[0046] The chamber body 12 is provided with a window 12w that transmits light. The window 12w may have a double window structure, for example, in a honeycomb shape. In this case, the intrusion of plasma and radicals into the window 12w is suppressed, and the amount of reaction products that adhere to the window 12w is reduced. A light collecting unit 12a such as a lens or a mirror may be arranged on the outside of the window 12w. An optical emission spectrometer 72 is connected to the window 12w via the light collecting unit 12a and an optical fiber 71. The optical emission spectrometer 72 analyzes the emission intensity of the plasma generated in the chamber S. The optical emission spectrometer 72 receives light from the plasma through the window 12w. The optical emission spectrometer 72 can operate in a maintenance mode in addition to a normal mode in which the emission intensity of the plasma is analyzed. In the maintenance mode, a spectroscope mounted on the optical emission spectrometer 72 is calibrated based on a predetermined light source.

[0047] Next, the calibration device will be described. The calibration device emits light that serves as a reference when the optical emission spectrometer 72 operating in the maintenance mode is calibrated. That is, the calibration device 100 is a so-called reference device for calibrating the optical emission spectrometer 72. Note that the calibration device 100 in one example may also be called a jig, since it is a device for arranging a light source at a predetermined position on the stage ST in the process module PM.

[0048] FIG. 4 is a plan view of the calibration device 100 according to the embodiment, seen from the top side. FIG. 5 is a diagram for explaining a light-emitting device 130 provided in the calibration device 100, and is a VV cross-sectional view of FIG. 4. FIG. 6 is a block diagram showing the calibration device. In addition, FIG. 6 also shows a dedicated FOUP 4F used when using the calibration device 100. The calibration device 100 has a base substrate 110, a control substrate 120, and a battery 140. The calibration device 100 is transported by a transport device of a processing system 1 having a function as a semiconductor manufacturing device S1, and causes a plurality of light-emitting devices 130 to emit light.

[0049] The base substrate 110 is a substrate, for example, a disk-shaped wafer. However, the base substrate 110 is not limited to a disk shape, and is not limited to a shape such as a polygon or ellipse, as long as it can be transported by a transport device that transports the substrate. A notch 110N is formed on an edge of the base substrate 110. Examples of materials for the substrate include silicon, carbon fiber, quartz glass, silicon carbide, silicon nitride, and alumina.

[0050] Control board 120 is a circuit board provided on the upper surface of base board 110, and has multiple light emitting devices 130A to 130D (hereinafter, when the light emitting devices are collectively referred to as "light emitting devices 130"), a connector pad 160, a control circuit 170, and an acceleration sensor 180.

[0051] The light emitting devices 130A to 130D are arranged on, for example, the control board 120. As shown in FIG. 4, the light emitting devices 130A to 130D are arranged on the periphery of the control board 120 at equal intervals in the circumferential direction. The light emitting device 130 includes a light source 131 and a reflecting member 135. The light source 131 is an LED (light emitting diode) light source and includes a board 132, an LED element 133 provided on the board 132, and a lens 134 covering the LED element 133. The light source 131 may be an OLED (organic light emitting diode). The light source 131 emits light that serves as a reference for calibration in the maintenance mode of the optical emission spectrometer 72. That is, the optical emission spectrometer 72 operating in the maintenance mode is calibrated in a state in which the light source 131 is emitting light in the process module PM. For example, the intensity data of the light output from the light source 131 is acquired in advance by the optical emission spectrometer that serves as a reference. The optical emission spectrometer 72 to be calibrated, which is connected to the plasma processing apparatus 10, may store intensity data of the light output from the light source 131 as reference data for calibration.

[0052] In one example, the substrate 132 has a rectangular plate shape. In addition, the direction of the optical axis 131a of the light source 131 may be perpendicular to the upper surface 110a of the base substrate 110. The direction of the optical axis 131a may be defined as a direction perpendicular to the light emitting surface 133a of the LED element 133. In one example, the light emitting surface 133a of the LED element 133 is parallel to the upper surface 120a of the control substrate 120 and the upper surface 110a of the base substrate 110. Each of the light emitting devices 130A to 130D has a plurality of light sources 131. In the illustrated example, each of the light emitting devices 130A to 130D has three light sources 131. The light source 131 of the light emitting device 130A, the light source 131 of the light emitting device 130B, the light source 131 of the light emitting device 130C, and the light source 131 of the light emitting device 130D emit light of different wavelengths (i.e., different colors). The number of light sources 131 for each wavelength is not limited to three, but may be two or less or four or more.

[0053] The reflecting member 135 reflects the light output from the light source 131 toward the outside of the base substrate 110 in a plan view. An example of the reflecting member 135 may be a reflecting plate (mirror). The reflecting member 135 has a planar reflecting surface 135a that reflects light. The reflecting surface may be a surface that specularly reflects incident light. The reflecting member 135 in the illustrated example is supported by a support 137. The support in the illustrated example has a rectangular parallelepiped shape.

[0054] The support 137 is located on the control substrate 120 closer to the center of the control substrate 120 (base substrate 110) than the light sources 131. In the illustrated example, three light sources 131 constituting one light emitting device 130 are arranged at a distance from each other in a direction intersecting (orthogonal in the illustrated example) the radial direction of the base substrate 110. The support 137 is located closer to the center than the three light sources 131 in the radial direction of the base substrate 110, at a position where it abuts against the three light sources 131. The height of the support 137 is greater than the height of the light sources 131.

[0055] The base end of the reflecting member 135 is connected to the upper end of the support 137. The reflecting member 135 protrudes from the upper end of the support 137 above the light source 131. The length from the base end to the tip of the reflecting member 135 may be, for example, approximately the same as the length of the substrate 132 of the light source 131 in the radial direction of the base substrate 110. In addition, the reflecting surface 135a of the reflecting member 135 and a plane parallel to the upper surface of the substrate 132 intersect at a predetermined angle. The angle θ between the reflecting surface 135a and a plane parallel to the upper surface of the substrate 132 can be determined according to the height of the window 12W to which the optical emission spectrometer 72 is connected. For example, the angle θ of the reflecting member 135 can be adjusted so that the optical axis 131a of the light source 131 is directed toward the window 12W when reflected by the reflecting surface 135a with the calibration device 100 placed on the electrostatic chuck ESC of the stage ST. The reflecting member 135 may be fixed to the support 137 by a fastening member 138 such as a screw so that the angle θ does not shift. When the heights of the reflecting member 135 and the window 12w are approximately the same, the angle θ of the reflecting member 135 may be, for example, about 42° to 48°, but is not limited to this. Note that, as shown by the dashed line in FIG. 6, the angular position of the reflecting member 135 may be adjustable.

[0056] The connector pad 160 is a connection portion for charging the battery, and can be connected to an external power source. The connector pad 160 is connected to the external power source via a connector 4FC provided on the dedicated FOUP 4F while being placed in the dedicated FOUP 4F. Four batteries 140 are arranged on the base substrate 110. The batteries 140 supply power to the light emitting devices 130a to 130d and the control circuit 170. The number of batteries 140 is not limited to four, as long as the number can withstand the maximum current value of the light emitting devices 130a to 130d. As shown in FIG. 6, a charging circuit 177 is connected between the connector pad 160 and the battery 140, and the charging of the battery 140 is controlled by the charging circuit 177. In addition, a power supply circuit 178 is connected to the battery 140, and power from the battery 140 is supplied to each device via the power supply circuit 178.

[0057] The control circuit 170 is disposed on the control board 120, and includes an arithmetic unit 171 including a processor, a memory 172, a controller 173, a current / voltage meter 174, etc., and controls the operation of the calibration device 100 based on a program stored in the memory 172. The control circuit 170 functions as a control unit that controls each part of the calibration device 100. For example, the turning on and off of each of the light-emitting devices 130 is controlled by the controller 173 while the power input to the light-emitting devices 130 is measured by the current / voltage meter 174. In addition, a communication device 175 is connected to the control circuit 170 in order to control communication with other external devices. In one example, information including a transfer recipe described later can be input to the calibration device 100 from an external computer 88 or the like via the communication device 175. The communication device 175 and the computer 88 may be connected to each other by wire or wirelessly. In one example, the calibration device 100 includes a connector pad 176 connected to the control circuit 170. The connector pad 176 is connected to a switch SW provided on the dedicated FOUP 4 F. The control circuit 170 can start controlling the calibration apparatus 100 based on a signal input from the switch SW.

[0058] The acceleration sensor 180 detects the acceleration applied to the calibration device 100, thereby detecting the transport operation of the calibration device 100 within the processing system 1. As shown in Fig. 6, the acceleration sensor 180 includes at least a first acceleration sensor 180X and a second acceleration sensor 180Y.

[0059] Fig. 7 is a schematic diagram for explaining the acceleration sensor 180 of the calibration device 100. Fig. 7 shows a schematic plan view of the calibration device 100 seen from above. The Y axis in Fig. 7 passes through the center of the calibration device 100 and the notch 110N. The X axis is perpendicular to the Y axis and passes through the center of the calibration device 100. The X axis and the Y axis may be axes that are perpendicular to (intersect) each other along a plane along the control board 120.

[0060] The first acceleration sensor 180X is configured to detect acceleration in the X-axis direction, and the second acceleration sensor 180Y is configured to detect acceleration in the Y-axis direction. Therefore, when the calibration device 100 is in a horizontal state, the first acceleration sensor 180X can detect acceleration in a first direction along the horizontal direction. Also, the second acceleration sensor 180Y can detect acceleration in a second direction that intersects with the first direction along the horizontal direction.

[0061] In one example, the first acceleration sensor 180X outputs a positive detection value according to the magnitude of the acceleration when an acceleration applied in the positive direction of the X-axis is detected, and outputs a negative detection value according to the magnitude of the acceleration when an acceleration applied in the negative direction of the X-axis is detected. The second acceleration sensor 180Y outputs a positive detection value according to the magnitude of the acceleration when an acceleration applied in the positive direction of the Y-axis is detected, and outputs a negative detection value according to the magnitude of the acceleration when an acceleration applied in the negative direction of the Y-axis is detected.

[0062] Generally, the square root of the sum of squares is used to calculate acceleration having vectors in the X-axis and Y-axis directions. However, in one embodiment, since the positive and negative directions in the X-axis and Y-axis directions are also important, a calculation using the sum value is performed as follows.

[0063] In the exemplary calibration device 100, detection values ​​from the first acceleration sensor 180X and the second acceleration sensor 180Y are input to the arithmetic device 171. The arithmetic device 171 adds up the detection value of the first acceleration sensor 180X and the detection value of the second acceleration sensor 180Y to derive a sum value. The arithmetic device 171 counts the transport operations in the processing system 1 based on the sum value.

[0064] When the calibration device 100 is transported in directions D1 and D2 along the X-axis shown in Fig. 7, the second acceleration sensor 180Y does not substantially detect acceleration. Therefore, the calculation device 171 may use only the detection value of the first acceleration sensor 180X as the sum value. Similarly, when the calibration device 100 is transported in directions D3 and D4 along the Y-axis shown in Fig. 7, the calculation device 171 may use only the detection value of the second acceleration sensor 180Y as the sum value. In addition, when the calibration device is transported in direction D5 in which both the X-axis and the Y-axis are positive directions and direction D6 in which both the X-axis and the Y-axis are negative directions, the detection values ​​may be added together as they are as the sum value.

[0065] When the calibration device 100 is transported in a direction D7 in which the X-axis is positive and the Y-axis is negative, and in a direction D8 in which the X-axis is negative and the Y-axis is positive, the detection value of the first acceleration sensor 180X and the detection value of the second acceleration sensor 180Y have opposite signs. Therefore, the sum may be a value obtained by subtracting the detection value of the second acceleration sensor 180Y from the detection value of the first acceleration sensor 180X. Note that, as long as the detection values ​​of the first acceleration sensor 180X and the second acceleration sensor 180Y are not cancelled out by the sum, the sum may be a value obtained by subtracting the detection value of the first acceleration sensor 180X from the detection value of the second acceleration sensor 180Y.

[0066] As an example, when one of the two detection values ​​input to the arithmetic device 171 is substantially zero, the arithmetic device 171 may determine that the calibration device 100 is being transported in the directions D1, D2, D3, and D4, and calculate the sum. When the signs of the two detection values ​​input to the arithmetic device 171 are the same, the arithmetic device 171 may determine that the calibration device 100 is being transported in the directions D5 and D6, and calculate the sum. When the signs of the two detection values ​​input to the arithmetic device 171 are different from each other, the arithmetic device 171 may determine that the calibration device 100 is being transported in the directions D7 and D8, and calculate the sum.

[0067] In the processing system 1, the calibration device 100 is transported by the transport devices TU1 and TU2. For example, when the calibration device 100 is transported to a certain position by the transport device and stops there, the calibration device 100 is accelerated in the direction opposite to the transport direction at the start of transport and is accelerated in the transport direction at the stop of transport. In this case, the calibration device 100 in one example determines that one transport operation has been performed when the sum of the detection value by the first acceleration sensor 180X and the detection value by the second acceleration sensor 180Y exceeds the positive first threshold and then falls below the negative second threshold within a certain time. Furthermore, the calibration device 100 determines that one transport operation has been performed when the sum of the detection value by the first acceleration sensor 180X and the detection value by the second acceleration sensor 180Y exceeds the positive second threshold within a certain time after falling below the negative first threshold.

[0068] FIG. 8 is an example of a graph for explaining the acceleration applied to the calibration device. In FIG. 8, the detection value by the first acceleration sensor 180X is shown as the "X direction", and the detection value by the second acceleration sensor 180y is shown as the "Y direction". The sum of the detection value by the first acceleration sensor 180X and the detection value by the second acceleration sensor 180Y is shown as the "summed value". In FIG. 8, since the signs of the detection values ​​in the X direction and the Y direction are different from each other, the sum is the value obtained by subtracting the detection value in the Y direction from the detection value in the X direction. The "moving average" in the graph indicates the moving average of the summed value. In FIG. 8, the acceleration when two conveying operations are performed with a time interval is shown. In this example, the detection value is disturbed by the application of an operation such as rotation to the calibration device 100 between the two conveying operations. In order to prevent erroneous detection of such disturbance in the detection value, the presence or absence of a conveying operation may be determined based on the moving average.

[0069] 8, the sum (here, moving average) of the detection value by the first acceleration sensor 180X and the detection value by the second acceleration sensor 180Y exceeds the positive first threshold TH1 and then falls below the negative second threshold TH2 within a certain time TS. Therefore, the calculation device 171 determines that a transport operation has been performed. Furthermore, since the sum then exceeds the positive threshold TH1 within a certain time after falling below the negative threshold TH2, the calculation device 171 determines that a second transport operation has been performed.

[0070] FIG. 9 is a diagram showing an example of a transfer path of a calibration device transferred through a processing system. When the calibration device 100 is transferred in an example processing system 1, the calibration device 100 is transferred to a target position by a plurality of transfer operations. For example, consider a case where the calibration device 100 is transferred to a process module PM1. The calibration device 100 is transferred through a process including transfer operations T1 to T6. The transfer operation T1 is an operation for taking out the calibration device from a container 4a (dedicated FOUP 4F). The transfer operation T2 is an operation for transferring the calibration device from a take-out position from the container 4a to an aligner AN. The transfer operation T3 is an operation for taking out the calibration device from the aligner AN. The transfer operation T4 is an operation for transferring the calibration device from a take-out position from the aligner AN to a load lock module LL1. The transfer operation T5 is an operation for transferring the calibration device from the load lock module LL1 to a transfer module TF. The transfer operation T6 is an operation for transferring the calibration device from the transfer module TF to a process module PM1. In these transfer operations T1 to T6, there are cases where the state of acceleration applied to the calibration apparatus 100 is different from one another. Therefore, in the calibration apparatus 100 as an example, the transfer operation is judged based on the transfer recipe.

[0071] FIG. 10 is an example of a transfer recipe used in an example of a calibration device. The transfer recipe R may indicate a relationship between information on the acceleration applied to the calibration device 100 transferred to the transfer device and information on the transfer position. In the transfer recipe R shown in FIG. 10, a required time, a maximum acceleration, a minimum acceleration, and an operation are associated with each transfer operation executed in sequence. The maximum acceleration corresponds to a positive threshold value TH1 for a sum (here, a moving average) of a detection value by the first acceleration sensor 180X and a detection value by the second acceleration sensor 180Y. The minimum acceleration corresponds to a negative threshold value TH2 for the sum. The required time is a time elapsed from detection of the maximum value of the sum to detection of the minimum value, or a time elapsed from detection of the minimum value of the sum to detection of the maximum value. In other words, the required time corresponds to a time required from the start to the end of transfer, and corresponds to a certain time TS. The required time, the maximum acceleration, and the minimum acceleration may be arbitrarily determined for each operation.

[0072] 10, the first to sixth operations correspond to the transport operations T1 to T6, respectively. Therefore, for example, when the arithmetic device 171 determines that the second operation has been performed, it can be recognized that the calibration device 100 is located at the aligner AN. Also, when it is determined that the first to sixth operations have been completed, it can be recognized that the calibration device 100 has been placed in the process module PM1. When the arithmetic device 171 recognizes that the calibration device 100 has been placed in the process module PM1, it causes the light emitting device 130 to emit light.

[0073] Next, the operation of the calibration device 100 will be described. FIG. 11 is a flow chart showing an example of an operation method of the calibration device. As shown in FIG. 11, in one example of the operation method, the calibration device 100 is transported into the process module PM by a transport device (step ST1). When the calibration device 100 is operated, the calibration device 100 placed on the dedicated FOUP 4F is first started. As described above, the dedicated FOUP 4F is provided with a switch SW for starting the calibration device 100, and the calibration device 100 can be started by the switch SW. When the calibration device 100 is started, the acceleration sensor 180 operates, and a signal from the acceleration sensor 180 is acquired by the arithmetic device 171. When the calibration device 100 is used to calibrate the optical emission spectrometer 72, the calibration device 100 is started by the switch SW. At this time, the control unit MC controls the processing system 1 so that the transport devices TU1 and TU2 transport the calibration device 100 from the FOUP 4F to above the stage ST in the process module PM. Moreover, the control unit MC controls the optical emission spectrometer 72 so as to operate in a maintenance mode.

[0074] The arithmetic device 171 derives a sum value of the acceleration based on the detection value acquired from the acceleration sensor 180. The arithmetic device 171 recognizes the transfer position of the calibration device 100 by analyzing the derived sum value with reference to the transfer recipe R. Recognition of the transfer position is equivalent to determining how far the operation of the transfer recipe R has been completed.

[0075] When it is recognized that the calibration device 100 has been transported to the process module PM1, the arithmetic device 171 controls the controller 173 to make the light source 131 emit light (step ST2). That is, when it is determined that the calibration device 100 has been placed on the electrostatic chuck ESC of the stage ST, the arithmetic device 171 makes a predetermined light-emitting device 130 emit light. When the control unit MC causes the optical emission spectrometer 72 to wait in the maintenance mode, the optical emission spectrometer 72 may be calibrated when the light source 131 emits light. That is, the optical emission spectrometer 72 measures the intensity data of the light from the light source 131 incident from the window 12w (step ST3). The optical emission spectrometer 72 compares the measured intensity data with reference intensity data stored in advance, and corrects the measured intensity data so that the intensity data match each other (step S4). When a predetermined time has passed since the light source 131 emitted light, the arithmetic device 171 may determine that the calibration of the optical emission spectrometer 72 has been completed, and may stop the light emission of the light source 131.

[0076] The calibration device 100 may be transported between the process module PM and the aligner AN multiple times according to the calibration program of the optical emission spectrometer 72. The arithmetic device 171 may cause the light emitting device 130 to emit light every time it is determined that the calibration device 100 has been transported to the process module PM1. In this case, the transfer recipe may include recipes corresponding to multiple transfer operations between the process module PM and the aligner AN in addition to the operation recipe when transporting from the FOUP4F to the process module PM. Furthermore, the transfer recipe may include a control procedure for the light emission of the light emitting device 130 in addition to the recipe for the transfer operation. In this case, the arithmetic device 171 can control the light emitting device 130 by referring to the transfer recipe.

[0077] For example, the light emission control procedure included in the transfer recipe is a procedure indicating that a different light emitting device 130 emits light for each transfer operation between the process module PM and the aligner AN. In one example of the control procedure, the rotational position of the calibration device 100 is adjusted in the aligner AN so that the light emitting device 130A is closest to the window 12w when the calibration device 100 is transferred to the process module PM. Thereafter, the light emitting device 130A emits light when it is recognized that the calibration device 100 has been transferred to the process module PM, and the light emission is stopped after a predetermined time has elapsed.

[0078] Next, the calibration device 100 is transported again to the aligner AN, and the rotational position of the calibration device 100 is adjusted in the aligner AN so that the light emitting device 130B is closest to the window 12w when the calibration device 100 is transported to the process module PM. Thereafter, when it is recognized that the calibration device 100 has been transported to the process module PM, the light emitting device 130B emits light, and the light emission stops after a predetermined time has elapsed.

[0079] Next, the calibration device 100 is transported again to the aligner AN, and the rotational position of the calibration device 100 is adjusted in the aligner AN so that the light emitting device 130C is closest to the window 12w when the calibration device 100 is transported to the process module PM. Thereafter, when it is recognized that the calibration device 100 has been transported to the process module PM, the light emitting device 130C emits light, and the light emission stops after a predetermined time has elapsed.

[0080] Finally, the calibration device 100 is transported back to the aligner AN, and the rotational position of the calibration device 100 is adjusted in the aligner AN so that the light emitting device 130D is closest to the window 12w when the calibration device 100 is transported to the process module PM. After that, when it is recognized that the calibration device 100 has been transported to the process module PM, the light emitting device 130D emits light, and stops emitting light after a predetermined time has elapsed.

[0081] When the light emission operations of all the light emitting devices 130A-130D are completed, the optical emission spectrometer 72 calibrates the spectroscope based on the light intensity data of each wavelength acquired based on the light emitted by the light emitting devices 130A-130D. When the light emission operations of all the light emitting devices 130A-130D are completed, the calibration device 100 is transported to the FOUP4F by the transport devices TU1 and TU2. Then, it is determined whether the calibration of the other optical emission spectrometers 72 connected to the remaining process modules PM is completed. If there is an optical emission spectrometer 72 that has not been calibrated, the calibration device 100 is transported to the process module PM connected to that optical emission spectrometer 72, and the calibration of the optical emission spectrometer 72 is performed by the same procedure as above.

[0082] As described above, in the calibration device 100, the arithmetic device 171 controls the light source 131 so that light is emitted from the light source 131 while the calibration device 100 is placed on the stage ST provided in the process module PM. The light emitted from the light source 131 is reflected by the reflecting member 135 toward the outside of the base substrate 110 in a plan view. In the process module PM, when a window 12w that allows light to enter the optical emission spectrometer 72 is provided on the side of the stage ST, the light from the light source 131 reflected by the reflecting member 35 is more likely to enter the optical emission spectrometer 72. That is, the intensity of the light that enters the optical emission spectrometer 72 is increased. Since the light from the light source 131 can be used as a reference for calibration, the optical emission spectrometer 72 can be calibrated by the calibration device 100. The calibration device 100 is driven by a battery 140 installed therein. The reflecting member 135 allows the light from the light source 131 to be efficiently irradiated onto the window 12w, thereby reducing consumption of the battery 140 and enabling the light source 131 to operate for a long period of time. This makes it possible to calibrate a plurality of optical emission spectrometers 72 connected to a plurality of process modules PM.

[0083] In one exemplary embodiment, each of the light sources 131 is an LED light source. In this configuration, heat generation by the light source can be suppressed, and power consumption by the light source can be suppressed.

[0084] In one exemplary embodiment, the base substrate 110 has a disk shape and includes a notch on a part of the periphery. In this configuration, the rotational position of the calibration apparatus 100 can be controlled by the aligner AN, so that the calibration apparatus 100 can be transported to the process module PM at an appropriate rotational position by the aligner AN and the transport devices TU1 and TU2.

[0085] In one exemplary embodiment, the multiple light emitting devices 130 are arranged in a circumferential direction along the periphery of the base substrate 110. In this configuration, any one of the multiple light emitting devices 130 can be brought close to the window 12w in the process module PM.

[0086] In the process module PM, the calibration device 100 cannot be controlled wirelessly. However, when the optical emission spectrometer 72 is calibrated using the light emitting device 130, it is not necessarily preferable in terms of operation to have the light emitting device 130 emit light during the transport operation. Therefore, in one exemplary embodiment, an acceleration sensor 180 arranged on the base substrate 110 is further provided. The computing device 171 may recognize the transport position of the calibration device 100 based on the output value of the acceleration sensor 180, and may cause the light source 131 to emit light when it is recognized that the calibration device 100 has been transported into the process module PM.

[0087] Although various exemplary embodiments have been described above, various omissions, substitutions, and modifications may be made without being limited to the above-described exemplary embodiments.

[0088] For example, although an example in which the light emitted by the light emitting device 130 is reflected by a reflecting member has been shown, the light emitting device may not have a reflecting member. FIG. 12 is a cross-sectional view of a calibration device showing a light emitting device 230 according to another example. The light emitting device 230 shown in FIG. 12 is one of a plurality of light emitting devices that emit light of different wavelengths and are arranged at a distance from each other on the periphery of the control board 120, similar to the light emitting device 130. The light emitting device 230 is arranged on the control board 120. The light emitting device 230 includes a light source 231. The light source 231 in one example includes a board 232, an LED element 233 provided on the board 232, and a lens 234 covering the LED element 233, similar to the light emitting device 130.

[0089] The direction of the optical axis 231a of the light source 231 in one example faces the outside of the base substrate 110 in a plan view. That is, the light emitted from the light source 231 travels toward the outside of the base substrate 110 in a plan view. In other words, the light source 231 emits light toward the outside of the base substrate 110. In the illustrated example, the optical axis 231a of the light source 231 is along the radial direction of the base substrate 110 in a plan view and is parallel to the upper surface of the base substrate 110. Note that the angle of the optical axis 231a of the light source 231 may be adjusted so as to face the window 12w. For example, the optical axis 231a of the light source 231 may be inclined at a predetermined angle with respect to a plane parallel to the base substrate 110. For example, the light source 231 may emit light obliquely upward toward the outside of the base substrate 110.

[0090] In the light emitting device 230, similarly to the light emitting device 130, the optical axis of the light source 231 faces outward from the base substrate 110 in a plan view. According to this configuration, in the process module PM, when a window 12w through which light is incident on the optical emission spectrometer 72 is provided on the side of the stage ST, the light from the light source 231 is easily incident on the optical emission spectrometer 72.

[0091] Although a reflector having a planar reflecting surface 135a has been exemplified as the reflecting member 135, other forms of the reflecting member may be used. For example, the reflecting member may have a non-planar reflecting surface such as a convex or concave surface. The reflecting member may also be an optical component having a reflecting surface such as a prism.

[0092] Also, while an example has been shown in which the light emitting devices 130 are arranged at four locations on the periphery of the base substrate, the number of light emitting devices is not particularly limited. The number of light emitting devices may be three or less, or five or more. For example, ten types of light emitting devices that output light of different wavelengths may be arranged at ten locations spaced apart in the circumferential direction on the periphery of the base substrate.

[0093] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0094] 100: calibration device, 110: base substrate, 130: light emitting device, 135: reflective member, 171: computing device (control device).

Claims

1. A calibration device for calibrating an optical emission spectrometer for monitoring plasma generated in a plasma processing device, comprising: A plate-shaped base substrate; A plurality of light emitting devices are disposed on the base substrate and emit light of different wavelengths; a reflecting member disposed on the base substrate, the reflecting member reflecting light emitted by the plurality of light emitting devices toward an outside of the base substrate in a plan view; a control device disposed on the base substrate and controlling the plurality of light emitting devices; The control device is configured to sequentially cause the plurality of light emitting devices to emit light.

2. The calibration device of claim 1 , wherein each of the plurality of light emitting devices is an LED light source.

3. The calibration device according to claim 1 or 2, wherein the base substrate is disk-shaped and includes a notch on a portion of its periphery.

4. The calibration device according to any one of claims 1 to 3, wherein the plurality of light emitting devices are arranged in a circumferential direction along a peripheral edge of the base substrate.

5. Further comprising an acceleration sensor disposed on the base substrate, The calibration device according to any one of claims 1 to 4, wherein the control device recognizes the transport position of the calibration device within the plasma processing device based on the output value of the acceleration sensor, and causes the multiple light-emitting devices to emit light when it is recognized that the calibration device has been transported to a predetermined position.

6. A calibration device for calibrating an optical emission spectrometer for monitoring plasma generated in a plasma processing device, comprising: A plate-shaped base substrate; A plurality of light emitting devices are disposed on the base substrate and emit light of different wavelengths; a control device disposed on the base substrate and controlling the plurality of light emitting devices; A calibration device, wherein the optical axis of the light emitting device is directed toward the outside of the base substrate in a plan view.

7. A calibration method for calibrating an optical emission spectrometer for monitoring plasma generated in a plasma processing apparatus using a calibration device, comprising: The calibration device comprises: A plate-shaped base substrate; A plurality of light emitting devices are disposed on the base substrate and emit light of different wavelengths; a reflecting member disposed on the base substrate, the reflecting member reflecting light emitted by the plurality of light emitting devices toward an outside of the base substrate in a plan view; a control device disposed on the base substrate and controlling the plurality of light emitting devices; The method comprises: transporting the calibration device into the plasma processing device by a transport device; causing the plurality of light emitting devices of the calibration device transferred into the plasma processing device to emit light in sequence; measuring intensity data of light emitted from the plurality of light emitting devices by the optical emission spectrometer; and calibrating the optical emission spectrometer based on the intensity data.

Citation Information

Patent Citations

  • Method and apparatus for monitoring plasma processing operations

    JP2003524753A

  • Method and apparatus for robot calibration by calibration device

    JP2009061585A

  • Method and apparatus for normalizing emission spectra

    JP2011517097A

  • System and method for calibration of optical signal in semiconductor processing system

    JP2018091836A

  • End point detection method and end point detection device

    JP2020065013A