Semiconductor Device

Abstract

To provide a semiconductor device in which damage to a transistor or the like is reduced even when external force such as bending is applied and stress is generated in the semiconductor device.SOLUTION: A semiconductor device comprises: a first island-like reinforcement film disposed on a substrate having flexibility; a semiconductor film comprising a channel formation region and an impurity region on the first island-like reinforcement film; a first conductive film disposed over the channel formation region via a gate insulating film; and a second island-like reinforcement film disposed while covering the first conductive film and the gate insulating film.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device that is provided with a The present invention relates to a semiconductor device that suppresses damage to elements such as transistors. [Background technology]

[0002] In recent years, integrated circuits consisting of transistors, etc., have been mounted on flexible substrates such as plastic. The technology of forming an integrated circuit on a flexible substrate is attracting attention. The semiconductor device thus fabricated is lighter and more flexible than those using semiconductor substrates, glass substrates, etc. It is possible to achieve cost reduction, etc. Flexible semiconductor devices can be folded, etc. This makes it possible to repurpose the equipment in a variety of fields and locations. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 4015002 [Patent Document 2] JP 2006-232449 A [Patent Document 3] JP 2007-150179 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, an integrated circuit having elements such as transistors on a flexible substrate is provided. When an external force such as bending is applied to a semiconductor device, the stress generated in the semiconductor device may cause the The transistors and other elements contained in the semiconductor device are damaged, and the characteristics of the transistors and other elements are affected. In addition, during the manufacturing process of semiconductor devices, Stress may be generated in the element, which may damage the element and reduce the product yield. do.

[0005] In view of the above problems, the present invention provides a semiconductor device that can withstand a wide range of loads even when an external force such as bending is applied to the semiconductor device. It is an object of the present invention to provide a semiconductor device that reduces damage to elements such as transistors. [Means for solving the problem]

[0006] The semiconductor device according to the present invention is characterized in that the semiconductor device is Even if external forces such as bending are applied to the semiconductor device, the stress generated in the elements such as transistors is The reinforcing film is provided to suppress bending in the thickness direction of the semiconductor device. The neutral plane (stretching and shrinking) where no stress distortion such as tensile stress or compressive stress occurs due to deformation such as The position of the surface (not including the surface) is provided in a suitable position for the semiconductor device.

[0007] The reinforcing film is preferably provided in the upper and lower regions of the semiconductor film that constitutes an element such as a transistor. The reinforcing film may be provided so as to be in contact with the semiconductor film, or may be provided so as to be in contact with the semiconductor film via an insulating film. The insulating film 11 may be provided so as not to come into contact with the film. Specific configurations of the semiconductor device will be described below.

[0008] A first island-shaped reinforcing film is provided on a flexible substrate, and a chip is formed on the first island-shaped reinforcing film. A semiconductor film having a channel forming region and an impurity region, and a gate electrode disposed above the channel forming region. A first conductive film is provided through an insulating film, and a gate insulating film is provided covering the first conductive film and the gate insulating film. a second island-shaped reinforcing film provided on the gate insulating film; and a second insulating film formed on the second insulating film so as to be electrically connected to the impurity region through an opening. and a second conductive film provided on the first island-shaped reinforcing film and the second island-shaped reinforcing film. The present invention is characterized in that it is provided between two island-shaped reinforcing membranes.

[0009] The first island-shaped reinforcement film and the second island-shaped reinforcement film are formed on the semiconductor film constituting the semiconductor device. The material is characterized by being made of a material with a higher Young's modulus than silicon nitride. Materials such as silicon oxide, metal oxide, and metal nitride can be used. The second island-shaped reinforcing film is made of a material having a higher Young's modulus than the semiconductor film. This makes it possible to improve the mechanical strength of the semiconductor film without changing the properties of the semiconductor film, Damage to the semiconductor film can be reduced.

[0010] The thickness of the first island-shaped reinforcing film is 50 nm or more and 200 nm or less, and the thickness of the second island-shaped reinforcing film is The thickness is characterized by being 100 nm or more and 400 nm or less. Effect of the Invention

[0011] By providing a reinforcing film on elements such as transistors that constitute a semiconductor device, Even if the semiconductor device is subjected to external forces such as bending during use after completion, Therefore, the stress generated in the elements such as transistors can be suppressed. Damage to elements can be reduced, and the yield and reliability of semiconductor devices can be improved. [Brief description of the drawings]

[0012] [Figure 1] 1A and 1B are diagrams illustrating an example of a semiconductor device. [Diagram 2] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Diagram 3] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Figure 4] 1A to 1C illustrate an example of a method for manufacturing a semiconductor device. [Diagram 5] 1A to 1C illustrate an example of a method for manufacturing a semiconductor device. [Figure 6] 1A to 1C are diagrams illustrating an example of a method for manufacturing a semiconductor device. [Figure 7] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Figure 8] 1A to 1C illustrate an example of a method for manufacturing a semiconductor device. [Figure 9] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Figure 10] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Figure 11] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Figure 12] 1A to 1C are diagrams illustrating an example of a semiconductor device. [Figure 13] 1A to 1C are diagrams illustrating an antenna that can be applied to a semiconductor device. [Figure 14] 1A to 1C are a block diagram and a diagram illustrating an example of a usage mode of a semiconductor device. [Figure 15] 1A to 1C are diagrams illustrating examples of usage of a semiconductor device. [Figure 16] 1A to 1C are diagrams illustrating examples of usage of a semiconductor device. [Figure 17] FIG. 13 is a diagram for explaining a model used in a simulation. [Figure 18] 11 is a stress distribution diagram of a semiconductor device obtained by simulation. [Figure 19] 11 is a stress distribution diagram of a semiconductor device obtained by simulation. [Figure 20] 1 is a diagram showing the stress distribution in the channel formation region obtained by simulation. [Figure 21] 1 is a diagram showing the stress distribution in the channel formation region obtained by simulation. [Figure 22] 1A to 1C are diagrams illustrating examples of usage of a semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] The present invention will be described below with reference to the drawings. The present invention is not limited to the above, and various modifications and variations in form and detail are possible without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in the following manner. The present invention is not limited to the above-described embodiment. In the configuration, the same reference numerals may be used in common between different drawings.

[0014] (Embodiment 1) In this embodiment mode, an example of a semiconductor device will be described with reference to the drawings.

[0015] In this embodiment, even if an external force such as bending is applied, the transistor or other elements are In order to suppress the stress generated, a reinforcing film is provided. In this embodiment, as an example of the structure, The Young's modulus of the semiconductor film is higher than that of the semiconductor film above and below the semiconductor film constituting the transistor. A case where a reinforcing film made of a material having a high resistance to friction is provided will be described.

[0016] An example of a semiconductor device described in this embodiment mode is shown in FIG. 1(B) shows a cross-sectional view taken along line AB in FIG. 1(A).

[0017] The semiconductor device shown in FIG. 1B includes a semiconductor film 106, a gate insulating film 107, and a gate electrode. The first conductive film 108 functions as a first conductive film 108 and the reinforcing film 103 (the first The reinforcing film 109 (also referred to as a second island-shaped reinforcing film) is provided with at least In FIG. 1B, the semiconductor At least a part of the membrane 106 is sandwiched between the reinforcing membrane 103 and the reinforcing membrane 109. In FIG. 1A, the reinforcing film 109 is provided so as to cover the semiconductor film 106. is.

[0018] The insulating film 110 is provided so as to cover the gate insulating film 107 and the reinforcing film 109. Furthermore, the source electrodes or drain electrodes of the thin film transistors 100a and 100b are formed on the insulating film 110. A second conductive film 111 that can function as an electrode is provided. The transistors 100a and 100b are disposed on a flexible substrate 101 with an insulating film 102 interposed therebetween. The following shows an example of a case where

[0019] The semiconductor film 106 functions as a channel forming region 106a, a source region, or a drain region. The impurity region 106b is a region for forming a channel. The impurity regions 106b are disposed in the insulating film 11 and spaced apart from each other through the region 106a. 1. A second conductive film 111 provided on the insulating film 110 is formed through an opening 124 provided at the upper surface of the insulating film 110. and is electrically connected to

[0020] The reinforcing film 103 is insulated from the semiconductor film 106 that constitutes the thin film transistors 100a and 100b. The semiconductor film 104 is provided so as to overlap the semiconductor film 106. It is designed to be as large as possible.

[0021] The reinforcing film 109 is provided so as to cover the first conductive film 108 and the gate insulating film 107. The reinforcing film 109 is provided so as to cover the entire semiconductor film 106. In addition, the area of ​​the reinforcing film 109 is preferably larger than the area of ​​the reinforcing film 103. In this way, the entire area of ​​the channel forming region is provided between the reinforcing film 103 and the reinforcing film 109. It is preferable that the above-mentioned method is used.

[0022] During the manufacturing process of semiconductor devices or when they are used after completion, external forces such as bending are applied to the semiconductor devices. This generates stress in the semiconductor film 106 in the thickness direction of the semiconductor device. The neutral plane (extension) where no distortion such as tensile stress or compressive stress occurs due to deformation such as bending. This is because the position of the non-shrinking surface is a position where stress is generated in the semiconductor film. The stress generated in the semiconductor film 106 damages the semiconductor film 106, and the semiconductor device is destroyed. This suppresses the generation of stress in the semiconductor film due to the application of external forces such as bending to the semiconductor device. In order to achieve this, the position of the neutral plane (the surface that does not expand or contract) in the thickness direction of the semiconductor device is determined by the The position is such that stress on the membrane can be suppressed.

[0023] The material used for the reinforcing film 103 and the reinforcing film 109 has a higher Young's modulus than the semiconductor film 106. It is preferable to use a material such as silicon nitride, silicon oxynitride, metal oxide, or metal. The reinforcing film 103 and the reinforcing film 109 may be made of the same material such as nitride. In this manner, the reinforcing film 103 and the reinforcing film 109 are preferably made of a semiconductor. By forming the film using a material with a higher Young's modulus than the film, the properties of the semiconductor film are not changed. The mechanical strength of the semiconductor film can be improved, and damage to the semiconductor film can be reduced. .

[0024] The thickness of the reinforcing film 103 is 50 nm or more and 200 nm or less, and the thickness of the reinforcing film 109 is 100 It is preferable that the thickness of the reinforcing film 103 is greater than the thickness of the reinforcing film 103 and is less than 400 nm. It is preferable that the thickness of the reinforcing film 103 is thicker than that of the reinforcing film 109. The ratio of the thicknesses (thickness of the reinforcing film 103 / thickness of the reinforcing film 109) is preferably 1 / 2 or less. The thickness of reinforcing film 103 and the thickness of reinforcing film 109 may be the same.

[0025] In this way, the semiconductor film 106 is sandwiched between the reinforcing film 103 and the reinforcing film 109. As a result, tensile stress and compressive stress are generated in the thickness direction of the semiconductor device due to deformation such as bending. The position of the neutral plane where no distortion occurs can be suppressed from occurring in the semiconductor film 106. Therefore, even if an external force such as bending is applied to the semiconductor device, In addition, the generation of stress in the semiconductor film 106 can be suppressed. Reinforcing films made of a material having a higher Young's modulus than the semiconductor film 106 are provided above and below the semiconductor film 106. This makes it possible to improve the mechanical strength of the semiconductor device without changing the properties of the semiconductor film. Therefore, damage to the semiconductor film 106 can be reduced, and the thin film transistor 1 It is possible to reduce damage and destruction of 00a, 100b.

[0026] In the semiconductor device shown in FIG. 1B, the reinforcing film 109 is disposed at the end and the reinforcing film 109 of the semiconductor film 106. The semiconductor device shown in this embodiment has this structure. The reinforcing film 109 is not limited to the above, and is arranged so as to overlap the easily damaged channel forming region 106a. It would be best to set one up.

[0027] For example, the reinforcing film 10 is disposed above the channel forming region 106a so as to cover the first conductive film 108. 9 may be provided (see FIG. 1(C)). The area of ​​the channel forming region 106a may be smaller than that of the reinforcing film 103. By sandwiching the film 109, the position of the neutral plane in the thickness direction of the semiconductor device is Therefore, the position can be such that the generation of stress in the channel formation region 106a can be suppressed. Therefore, even if an external force such as bending is applied to the semiconductor device, the channel formation region 106 Therefore, it is possible to suppress the occurrence of stress in the thin film transistor 100a. In addition, the Young's modulus of the semiconductor film 100b is smaller than that of the semiconductor film 106. By providing reinforcing films made of a material with high thermal conductivity above and below the semiconductor film 106, The mechanical strength of the semiconductor film can be improved without changing the properties of the film. Since it is not necessary to remove the reinforcing film 109 when forming the opening 124 in the border film 110, the opening This makes it easy to perform etching when forming the portion 124.

[0028] In addition, a reinforcing film 114 may be laminated on the reinforcing film 103 (see FIG. 2). In this case, the reinforcing film 114 is formed so as to cover the reinforcing film 103 and the insulating film 102. By providing the reinforcing film 114, the lower side of the semiconductor film 106 is prevented from being exposed to impurities and moisture. In addition, the mechanical strength of the lower part of the semiconductor film 106 can be improved. A structure in which a reinforcing film 114 is provided on the insulating film 102 may be used. When the film 103 and the reinforcing film 114 are laminated, the thickness of the reinforcing film 103 and the thickness of the reinforcing film 114 are The total thickness is preferably 50 nm or more and 200 nm or less. The area is preferably larger than the area of ​​the reinforcing membrane 103 .

[0029] FIG. 1 shows an example in which one semiconductor film 106 is provided on one island-shaped reinforcing film 103. As shown in FIG. 3, a plurality of island-shaped semiconductor films 103 are formed on one reinforcing film 103. A structure in which a plurality of island-shaped semiconductor films are provided on one reinforcing film 103 may be used. In this case, the step at the end of the reinforcing film 103 can be reduced, so that the step caused by the mask displacement or the like can be reduced. This can prevent the semiconductor film 106 from being broken by a step.

[0030] A gate insulating film 1 is formed above a channel forming region of each of the island-shaped semiconductor films 106. The first conductive film is provided through the gate insulating film 107. The reinforcing film 109 is and the first conductive film 108. An insulating film 110 is provided to cover the gate insulating film 107 and The insulating film 110 is provided to cover the first conductive film 108. A second conductive film 111 provided on the impurity region 106b and the insulating film 110 is connected via a gate electrode 124. and are electrically connected to each other.

[0031] In the present embodiment, a thin film transistor has been described as an example. Alternatively, an organic transistor may be provided.

[0032] In this way, the reinforcement layer is formed on the upper and lower sides of the semiconductor film using a material having a higher Young's modulus than the semiconductor film. By providing the film, the semiconductor device can be resistant to deformation such as bending in the thickness direction. The position of the neutral plane where no distortion due to tensile or compressive stress occurs is determined by determining the position of the neutral plane where no stress occurs in the semiconductor film. In other words, the position of the neutral plane of the semiconductor device can be adjusted to the position where the semiconductor device can be prevented from being damaged. Therefore, the semiconductor device can be manufactured in a convenient position during its manufacturing process and for use after completion. Even if an external force such as bending is applied to the semiconductor device, the transistors, etc. Therefore, the stress generated in the element such as a transistor can be suppressed. This can reduce the number of defects and improve the yield and reliability of the semiconductor device.

[0033] The structure of the semiconductor device shown in this embodiment mode can be combined with the structure of the semiconductor device shown in other embodiment modes. It can be implemented in combination.

[0034] (Embodiment 2) In this embodiment mode, an example of a method for manufacturing the semiconductor device shown in the above-described embodiment mode 1 will be described. In this embodiment, an element such as a thin film transistor is disposed on a support substrate. After forming the element on the support substrate, the process of peeling the element off from the support substrate and transferring it to another substrate will be described. In this specification, the term "transposition" refers to the transfer of an element formed on a substrate to another substrate. This means that...

[0035] First, a release layer 121 is formed on one surface of a substrate 120, followed by an insulating layer 122 which functions as a buffer layer. The peeling layer 121, the insulating film 102, and the reinforcing film are formed continuously. Then, a resist film is formed on the reinforcing film by photolithography. By selectively etching using a mask made of SiO2, island-shaped reinforcing films 103 are formed. See Figure 4(A).

[0036] The substrate 120 may be a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate, or the like. Since there is no significant limitation on the area or shape of such a substrate, the substrate 120 may be any suitable substrate. For example, if a rectangular shape with one side longer than 1 meter is used, productivity will be significantly improved. This advantage is greater than that of using a circular silicon substrate. In this step, the release layer 121 is provided on the entire surface of the substrate 120. However, if necessary, a release layer may be provided on the entire surface of the substrate 120, and then the substrate may be subjected to photolithography. Alternatively, a peeling layer 121 may be formed in contact with the substrate 120. However, if necessary, an insulating film is formed as a base so as to contact the substrate 120. A peeling layer 121 may be formed so as to be in contact with the insulating film.

[0037] The peeling layer 121 may be a metal film or a laminated structure of a metal film and a metal oxide film. The following are available: tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta ), Niobium (Nb), Nickel (Ni), Cobalt (Co), Zirconium (Zr), Lead (Zn), Ruthenium (Ru), Rhodium (Rh), Palladium (Pd), Osmium (Os), iridium (Ir), or an alloy material containing the above elements as the main component Alternatively, a film made of a compound material is formed as a single layer or a laminate. It is formed using various CVD methods such as sputtering and plasma CVD. Metal film and metal oxide As for the laminated structure of the film, after forming the above-mentioned metal film, it is heated in an oxidizing atmosphere or an NO2 atmosphere. Plasma treatment in air, heat treatment in oxygen or NO2 atmosphere When an oxide or oxynitride of the metal film is provided on the surface of the metal film by the above-mentioned method, the tungsten By performing plasma treatment on the tungsten film, tungsten oxide is removed from the tungsten film surface. It is possible to form a metal oxide having the following structure.

[0038] The insulating film 102 functions as a buffer layer. In order to facilitate peeling at the interface between the separation layer 121 and the insulating film 102 functioning as a buffer layer, or to prevent cracks or damage to the semiconductor elements and wiring during the subsequent peeling process. The insulating film 102 serving as a buffer layer is formed by a sputtering method or a plasma It is formed in a single layer or multilayer using inorganic compounds by CVD, coating, printing, etc. Representative examples of compounds include silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride. (SiOxNy) (x>y), silicon oxynitride (SiNxOy) (x>y), etc. The thickness of the insulating film 102 functioning as the photoresist layer is 10 nm to 1000 nm, and further 100 Here, a silicon oxynitride having a thickness of 500 nm to 700 nm is preferable. The base film is formed by the plasma CVD method.

[0039] Next, a reinforcing film is formed on the release layer 121 by sputtering, plasma CVD, coating, or printing. The reinforcing film is formed by a method such as a method for forming the reinforcing film using silicon nitride, silicon nitride oxide, ceramic such as alumina, etc. The insulating layer can be formed using silicon oxide, metal oxide, or metal nitride. By using a material such as a silicon dioxide, moisture, oxygen, etc. can be prevented from entering the element formation layer 134 to be formed later from the outside. This can prevent the intrusion of gases and the exposure of the lower side of the semiconductor film to impurities. Tantalum (Ta), Tungsten (W), Titanium (Ti), Molybdenum (Mo), Aluminum (Al), Copper (Cu), Chromium (Cr), Niobium (Nb), Nickel (Ni) , Cobalt (Co), Zirconium (Zr), Zinc (Zn), Ruthenium (Ru), Metals such as rhenium (Rh), palladium (Pd), osmium (Os), and iridium (Ir) The reinforcing film may be formed by using an oxide or nitride of the above. The thickness of the reinforcing film is 50 nm to 200 nm. Here, a silicon nitride film having a thickness of 50 nm to 200 nm is formed by plasma CV. After forming the pattern by the D method, a mask made of resist formed by photolithography is Then, selective etching is performed using the etching gas to form island-shaped reinforcing films 103 .

[0040] Next, an insulating film 104 is formed so as to cover the reinforcing film 103 and the insulating film 102, and then an island-shaped A semiconductor film 106 is formed (see FIG. 4(B)).

[0041] The insulating film 104 functions as a base layer. The same forming method and material as the insulating film 102 can be appropriately used. The insulating film 104 functioning as a base layer may have a laminated structure. In the case of the structure, for example, a silicon oxynitride film is formed as the first layer, and a silicon oxynitride film is formed as the second layer. When the insulating film to be used as the base has a three-layer structure, the first insulating film is made of silicon oxide. A silicon nitride oxide film is formed as the second insulating film, and an oxide film is formed as the third insulating film. A silicon nitride film is preferably formed. Alternatively, a silicon oxynitride film is formed as the first insulating film, A silicon nitride oxide film is formed as the second insulating film, and a silicon oxynitride film is formed as the third insulating film. The base film is a blocking film that prevents impurities from entering from the substrate 120. It functions as a blocking membrane.

[0042] The island-shaped semiconductor film 106 is formed by forming an amorphous semiconductor film and crystallizing the amorphous semiconductor film. After forming a crystalline semiconductor film, a resist mask is formed by photolithography. The crystalline semiconductor film is formed by selectively etching the crystalline semiconductor film.

[0043] Amorphous semiconductor films are deposited to thicknesses of 25 nm or less by sputtering, LPCVD, plasma CVD, etc. The film is formed to a thickness of up to 200 nm (preferably 30 nm to 150 nm).

[0044] Next, the amorphous semiconductor film is crystallized by irradiating it with laser light. Thermal crystallization using an RTA or furnace annealing furnace, using a metal element that promotes crystallization The amorphous semiconductor film may be crystallized by a method in which the amorphous semiconductor film is crystallized using a thermal crystallization method.

[0045] An example of a process for forming the island-shaped semiconductor film 106 will be briefly described below. First, plasma CVD An amorphous semiconductor film having a thickness of 50 to 60 nm is formed by the method. A solution containing nickel, which is a metal element that is effective for the formation of amorphous semiconductor films, is then applied to the amorphous semiconductor film. The film was subjected to dehydrogenation (500℃, 1 hour) and thermal crystallization (550℃, 4 hours). A crystalline semiconductor film is formed by irradiating the semiconductor with laser light and then performing photolithography. A resist mask is formed using the resist, and the semiconductor film is selectively etched. The island-shaped semiconductor film 106 is formed by the thermal crystallization method using a metal element that promotes crystallization. Alternatively, the amorphous semiconductor film may be crystallized only by irradiation with laser light without performing a thermal treatment.

[0046] The gate insulating film 107 is formed by a CVD method, a sputtering method, or the like, and contains silicon oxide or silicon nitride. For example, a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, Either one of the films is formed as a single layer, or a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film is formed. The layers are combined and laminated to form the structure.

[0047] The gate insulating film 107 is formed by subjecting the semiconductor film 106 to plasma treatment to oxidize or oxidize the surface. For example, the nitride may be formed by nitriding a rare gas such as He, Ar, Kr, or Xe with oxygen. Plasma treatment using a mixture of gases such as nitrogen oxide (NO2), ammonia, nitrogen, and hydrogen In this case, the plasma is excited by the introduction of microwaves, resulting in a low electron temperature. This high-density plasma can generate high-density plasma. cations (which may contain OH radicals) and nitrogen radicals (which may contain NH radicals). ) can oxidize or nitride the surface of the semiconductor film.

[0048] Treatment with such plasma can reduce the thickness of the film to 1 to 20 nm, typically 5 to 10 nm. An insulating film is formed on the semiconductor film. In this case, the reaction is a solid-phase reaction, so the insulating film The interface state density between the semiconductor film and the silicon substrate can be made extremely low. The principle is to directly oxidize (or nitride) a semiconductor film (crystalline silicon or polycrystalline silicon). Therefore, the variation in the thickness of the insulating film formed can be made extremely small. This is a very favorable condition because the grain boundaries of the crystalline silicon are not subject to strong oxidation. In other words, the surface of the semiconductor film is oxidized in a solid phase by the plasma treatment shown here. There is no abnormal oxidation reaction at the grain boundaries, and the interface state density is good and uniform. A low insulating film can be formed.

[0049] The gate insulating film 107 may be formed by using only an insulating film formed by plasma treatment. In addition, silicon oxide, silicon oxynitride, and silicon nitride can be produced by the CVD method using plasma and thermal reactions. In either case, the insulating film formed by plasma A transistor formed by including an insulating film in part or the whole of a gate insulating film has characteristics variation. can be made smaller.

[0050] In addition, a continuous wave laser or a laser with a frequency of 10 MHz or more is used for the semiconductor film. The semiconductor film 106 obtained by irradiating the semiconductor light and scanning it in one direction to crystallize the semiconductor film 106 is The crystals grow in the scanning direction of the channel. The transistor is placed in the direction of the carrier flow when the junction is formed. By using the above-mentioned plasma-formed gate insulating film for the transistor, the characteristic variation is reduced. This makes it possible to obtain thin-film transistors (TFTs) with small capacitance and high field-effect mobility. .

[0051] Next, a conductive film for forming a gate electrode is formed on the gate insulating film 107. The conductive film 122 and the conductive film 123 are stacked in this order (see FIG. 4C). 22 is formed to a thickness of 20 nm to 100 nm by plasma CVD or sputtering. The conductive film 123 is formed to a thickness of 100 nm to 400 nm by plasma CVD or sputtering. The conductive film 122 and the conductive film 123 are formed of tantalum (Ta), tungsten (W), , titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium ( Elements selected from the group consisting of Cr, niobium (Nb), etc., or alloy materials containing these elements as the main components or compound materials, or alloy materials containing these elements and silicon (Si) element, or It is made of a compound material, or is made of polycrystalline silicon doped with impurity elements such as phosphorus. The conductive film 122 and the conductive film 123 are formed of a semiconductor material (for example, silicon (Si)) that can be used for the conductive film 122. Examples of the 23 combinations include tantalum nitride and tungsten films, tungsten nitride films, and Examples include a film and a tungsten film, a molybdenum nitride film and a molybdenum film, etc. Tantalum nitride has high heat resistance, and therefore, after the conductive film 122 and the conductive film 123 are formed, the conductive film 122 and the conductive film 123 are heated. Heat treatment can be performed for the purpose of improving the functionality. In addition, in the case of a three-layer structure instead of a two-layer structure, In this case, it is advisable to adopt a laminated structure of a molybdenum film, an aluminum film, and a molybdenum film.

[0052] Next, a resist mask is formed by photolithography, and the conductive film 122 After the conductive film 123 is selectively etched to form the first conductive film 108, An impurity element is introduced into the semiconductor film 106 using the first conductive film 108 as a mask to form a channel. A formation region 106a and an impurity region 106b are formed (see FIG. 4(D)). 08 functions as a gate electrode (including gate wiring) in a thin film transistor, and impurities Region 106b functions as a source or drain region in a thin film transistor.

[0053] As the impurity element to be introduced, an n-type impurity element or a p-type impurity element is used. As the n-type impurity element, phosphorus (P) or arsenic (As) can be used. Boron (B), aluminum (Al), gallium (Ga), etc. are used as impurity elements. Here, phosphorus (P) is used as the impurity element, and an n-type thin film transistor is Form a gyrus.

[0054] Next, a reinforcing film 125 is formed so as to cover the first conductive film 108 and the gate insulating film 107. (See Figure 4(E)).

[0055] The reinforcing film 125 can be formed by the same method and using the same materials as those of the reinforcing film 103. In addition, the reinforcing film 125 is preferably formed to have a thickness of 100 nm or more and 400 nm or less.

[0056] Next, a mask made of resist is formed by photolithography, and the reinforcing film 125 By selectively etching the above, a reinforcing film 109 is formed (see FIG. 5(A)). The reinforcing film 109 and the reinforcing film 103 are made of a material having a higher Young's modulus than the semiconductor film 106. By providing the semiconductor film 106 between the first and second electrodes, the semiconductor device can be prevented from bending in the thickness direction. The position of the neutral plane where no distortion such as tensile stress or compressive stress occurs due to deformation such as The conductive film 106 can be positioned so as to prevent stress from being generated in the conductive film 106. Even if an external force such as bending is applied to the device, stress is not generated in the semiconductor film 106. It is possible to suppress the above.

[0057] Next, an insulating film that functions as an interlayer insulating film is formed so as to cover the gate insulating film 107 and the reinforcing film 109. After forming the film 110, an opening 124 is formed that reaches the impurity region 106b of the semiconductor film 106. Then, a part of the surface of the semiconductor film 106 is exposed (see FIG. 5(B)). The insulating film 107, the reinforcing film 109, and the insulating film 110 are partially etched to form an opening 124. Form.

[0058] The insulating film 110 is a film containing oxygen or nitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. Insulating films with carbon such as DLC (Diamond-Like Carbon), epoxy, Polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. The insulating layer is made of a single layer or a laminated structure of a siloxane material such as a siloxane resin. can be done.

[0059] Next, a second conductive film 111 is selectively formed to fill the opening 124. An insulating film 112 is formed so as to cover the conductive film 111 (see FIG. 5C).

[0060] The conductive film 111 is formed by depositing aluminum (Al), tungsten (Tungsten) or the like by a CVD method, a sputtering method, or the like. Stainless steel (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (N i), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium Elements selected from neodymium (Nd), carbon (C), and silicon (Si), or elements mainly composed of these elements It is made of alloy or compound material with aluminum as the main component, and is formed in a single layer or multilayer. The alloy material containing aluminum as a main component is, for example, a material containing nickel and aluminum as a main component, or An alloy material mainly composed of aluminum and containing nickel, carbon, and / or silicon. The conductive film 111 corresponds to a material. For example, the conductive film 111 is a material including a barrier film and an aluminum silicon (Al-Si The laminated structure of the barrier film, the aluminum silicon (Al-Si) film and the nitride film It is recommended to use a laminated structure of a titanium film and a barrier film. It corresponds to a thin film made of aluminum nitride, molybdenum, or molybdenum nitride. Aluminum silicon has a low resistance and is inexpensive, so it is suitable as a material for forming the conductive film 111. In addition, by providing upper and lower barrier layers, it is possible to prevent the formation of aluminum or aluminum alloy. It is possible to prevent the occurrence of silicon hillocks. In addition, titanium, which is a highly reducing element, When a barrier film made of SiO2 is formed, a thin native oxide film is formed on the crystalline semiconductor film. Even if the oxide film is removed, it is possible to reduce the native oxide film and obtain a good contact with the crystalline semiconductor film. The first conductive film 108 may be formed using the same material.

[0061] The insulating film 112 is formed of oxygen or nitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. Insulating films with carbon such as DLC (Diamond-Like Carbon) and epoxy , polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. The insulating layer is formed in a single layer or a multilayer structure of an organic material or a siloxane material such as a siloxane resin. It is possible.

[0062] Next, the element formation layer 134 including the thin film transistors 100a, 100b, etc. is removed from the substrate 120. Here, the element formation layer 1 is peeled off by irradiating it with laser light (for example, UV light). After forming the opening in the insulating layer 34, one surface of the element formation layer 134 (the surface where the insulating film 112 is exposed) is The element formation layer 134 is then removed from the substrate 120 by physical force. Peel off (see Figure 6(A)).

[0063] In addition, before peeling off the element formation layer 134 from the substrate 120, an opening is provided in the element formation layer 134. Then, an etchant may be introduced to remove the release layer 121. The etchant may be a fluoride Gases or liquids containing halogens or interhalogens can be used. Chlorine trifluoride (ClF3) can be used as the halogen fluoride-containing gas.

[0064] Usually, when peeling off the element formation layer 134 from the substrate 120, the thin film transistors 100a, 1 Stress may be generated in the thin film transistors 100a and 100b, which may damage the thin film transistors 100a and 100b. However, the semiconductor film 106 of the thin film transistor has a Young's modulus higher than that of the semiconductor film 106. By providing the reinforcing film 103 and the reinforcing film 109 formed at the same rate, the element formation layer 134 Even if an external force is applied due to bending or the like, the stress generated in the semiconductor film 106 can be suppressed. Therefore, damage or destruction of the thin film transistors 100a and 100b can be reduced. In particular, after elements such as transistors are formed on a support substrate, they can be transferred to another substrate. In this case, providing the reinforcing films 103 and 109 is extremely effective.

[0065] In addition, when peeling, it is possible to wet the surface to be peeled with water or an aqueous solution such as ozone water. This prevents elements such as the thin film transistors 100a and 100b from being destroyed by static electricity or the like. It can be prevented.

[0066] Next, the second sheet 1 is attached to the other surface of the element formation layer 134 (the surface peeled off from the substrate 120). 27 is provided, and then one or both of a heat treatment and a pressure treatment are performed to form the element formation layer 134. The first sheet 126 and the second sheet 127 are attached to each other (see FIG. 6(B)). To 127 is a hot melt film, a plastic film with an adhesive layer, or a paper In addition, the first sheet 126 and the second sheet 127 can be used to improve pressure resistance. To achieve this, thin ceramics may be used, or a carbon fiber or glass fiber fabric may be woven with resin. A sheet impregnated with water, so-called prepreg, may be used. If a flexible material is used as the material for the sheet 127, it can be easily attached to the curved surface of an article. It is possible to provide a semiconductor device suitable for the above.

[0067] The first sheet 126 and the second sheet 127 are made of antistatic material to prevent static electricity. It is also possible to use a film with antistatic measures (hereinafter referred to as an antistatic film). As for the film, there are films in which antistatic materials are dispersed in resin, and antistatic films. Examples of such antistatic materials include films with antistatic materials attached. The film may be a film having an antistatic material on one side, or a film having an antistatic material on both sides. The film may be provided with an antistatic material on one side. The surface of the film that has been applied with the antistatic material should be on the inside of the film. It may be attached to the layer or to the outside of the film. The antistatic material may be provided on the entire surface or part of the film. Possible materials include metals, indium tin oxide (ITO), amphoteric surfactants, and cationic surfactants. Surfactants such as ionic surfactants and nonionic surfactants can be used. As an antistatic material, crosslinked Resin materials containing polymeric copolymers can be used. It can be made into an antistatic film by gluing, kneading, or coating it. By sealing the element formation layer with an antistatic film, This makes it possible to prevent external static electricity and the like from adversely affecting the semiconductor elements.

[0068] Also, at the same time as or after the second sheet 127 is provided, the first sheet 126 is peeled off. By removing the first sheet 126, the semiconductor device can be made thinner. In this case, the first sheet 126 can be, for example, heated. Therefore, a thermal peeling tape with weak adhesive strength can be used. The sheet is sometimes called a substrate, and the second sheet 127 corresponds to the substrate 101 in FIG. .

[0069] Through the above steps, a semiconductor device can be manufactured.

[0070] In this way, the reinforcement layer is formed on the upper and lower sides of the semiconductor film using a material having a higher Young's modulus than the semiconductor film. By providing the film, the semiconductor device can be resistant to deformation such as bending in the thickness direction. The position of the neutral plane where no distortion due to tensile or compressive stress occurs is determined by determining the position of the neutral plane where no stress occurs in the semiconductor film. In other words, the position of the neutral plane of the semiconductor device can be adjusted to the position where the semiconductor device can be prevented from being damaged. Therefore, the semiconductor device can be manufactured in a convenient position during its manufacturing process and for use after completion. Even if an external force such as bending is applied to the semiconductor device, the transistors, etc. Therefore, the stress generated in the element such as a transistor can be suppressed. This can reduce the number of defects and improve the yield and reliability of the semiconductor device.

[0071] In this embodiment mode, after the thin film transistor is formed on the supporting substrate, The manufacturing method shown in this embodiment is a process of peeling the element from the substrate and transferring it to another substrate. For example, the thin film transistors 100a and 100b may be directly formed on the substrate 101. In this case, the substrate 101 may be used instead of the substrate 120 in the above-mentioned process. In this case, the peeling layer 121 may be omitted. A metal substrate such as a silicon substrate, a plastic substrate, or the like can be used.

[0072] The method for manufacturing a semiconductor device shown in this embodiment mode can be applied to a semiconductor device shown in another embodiment mode. The above-mentioned method can be carried out in combination with the above-mentioned method.

[0073] (Embodiment 3) In this embodiment, the thin film transistor of the semiconductor device shown in the above-mentioned embodiment 1 and embodiment 2 is In the transistor, an insulating film is formed in contact with a side surface of a first conductive film that functions as a gate electrode. A case where an LDD region is formed below the insulating film will be described with reference to the drawings.

[0074] An example of a semiconductor device described in this embodiment mode is shown in FIG. 7(B) shows a cross-sectional view taken along line AB in FIG. 7(A).

[0075] The semiconductor device shown in this embodiment includes thin film transistors 100a and 100b. A first conductive film functioning as a gate electrode included in the thin film transistors 100a and 100b An insulating film 130 is provided in contact with the side surface of the substrate 108 (see FIG. 7). Also called an inside wall, this structure has an LDD region provided below the insulating film 130. In addition, in FIG. 7B, the insulating film 130 and the LDD region are added to the structure shown in FIG. A structure having a functioning impurity region 106c is shown.

[0076] Next, an example of a method for forming the insulating film 130 will be described below with reference to FIG.

[0077] First, after forming the same as in the second embodiment up to FIG. 4(C), a photolithography method is used. A resist mask is formed by selectively etching the conductive film 122 and the conductive film 123. The first conductive film 108 is then masked. A first impurity element is introduced into the semiconductor film 106 as a mask to form a channel forming region 106a and an insulator film 106b. A pure region 128 is formed (see FIG. 8(A)). As the first impurity element, an n-type impurity The impurity elements used are either p-type or p-type. The n-type impurity elements are phosphorus (P) or arsenic ( As the p-type impurity element, boron (B) or aluminum (Al) can be used. In this example, the impurity elements are aluminum (Al), gallium (Ga), etc. The case of forming an n-type thin film transistor using phosphorus (P) will be described.

[0078] Next, an insulating film 129 is formed so as to cover the first conductive film 108 and the gate insulating film 107. (See FIG. 8B). The insulating film 129 is formed by a plasma CVD method, a sputtering method, or the like. Films containing inorganic materials such as silicon, silicon oxide, or silicon nitride, and films containing organic materials such as organic resins The film is formed as a single layer or a multilayer.

[0079] Next, the insulating film 129 is selectively etched by anisotropic etching mainly in the vertical direction. By this etching, the insulating film 130 (sidewall At the same time as the formation of the insulating film 130, a part of the gate insulating film 107 and the insulating film 108 are formed. In some cases, a portion of the film 104 may be etched and removed (see FIG. 8(C)). By removing a part of the insulating film 107, the remaining gate insulating film 107 is It is formed below the conductive film 108 and the insulating film 130 .

[0080] Next, a second insulating film is formed on the semiconductor film 106 using the first conductive film 108 and the insulating film 130 as a mask. A pure element is introduced to form an impurity region 106b which functions as a source region or a drain region. Then, an impurity region 106c that functions as an LDD region is formed (see FIG. 8C). As the impurity element, an n-type impurity element or a p-type impurity element is used. As the impurity element, phosphorus (P) or arsenic (As) can be used. For example, boron (B), aluminum (Al), gallium (Ga), etc. can be used. The second impurity element is introduced at a concentration higher than that of the first impurity element. In this case, phosphorus (P) is used as the impurity element.

[0081] Next, the reinforcing film 10 is formed so as to cover the semiconductor film 106, the first conductive film 108, and the insulating film 130. The reinforcing film 109 is formed by the method shown in FIG. 5B, 5C, and 6 shown in the second embodiment. Through the steps shown, the semiconductor device shown in FIG. 7 can be manufactured.

[0082] In this manner, the reinforcing film 103 and the reinforcing film 104 are formed of a material having a higher Young's modulus than the semiconductor film 106. By providing the semiconductor film 106 between the sclera 109, the semiconductor device can be In this case, the position of the neutral plane can be set to a position where the generation of stress in the semiconductor film 106 can be suppressed. Therefore, even if an external force such as bending is applied to the semiconductor device, the semiconductor film 106 In addition, the material has a higher Young's modulus than the semiconductor film. By providing the reinforcing film formed in the above and below the semiconductor film, the properties of the semiconductor film are changed. Therefore, the mechanical strength of the semiconductor film can be increased without causing any damage to the semiconductor film. Damage to elements can be reduced, and the yield and reliability of semiconductor devices can be improved.

[0083] In FIG. 7 and FIG. 8, an insulating film 104 is formed on an island-shaped reinforcing film 103, and an island-shaped semiconductor film However, the present invention is not limited to this. For example, as shown in Figs. 9(A) and (B), A structure in which a semiconductor film 106 is provided on the semiconductor film 103 may be used.

[0084] FIG. 9A shows an island-shaped semiconductor film 106 provided on an island-shaped reinforcing film 103, and a gate insulating film 104 is formed on the island-shaped reinforcing film 103. An opening is provided in the film 107, and the island-shaped reinforcing film 103 and the island-shaped reinforcing film 109 are formed in the opening. 9B shows a structure in which an island-shaped semiconductor is formed on the island-shaped reinforcing film 103. A film 106 is provided, which is in contact with the side surface of a first conductive film 108 functioning as a gate electrode. The insulating film 102, the island-shaped reinforcing film 103, the semiconductor film 106, the insulating film 130, and the insulating film 130 are provided. The reinforcing film 109 is provided so as to cover the insulating film 130 and the first conductive film 108. The reinforcing film 103 and the island-shaped reinforcing film 109 are in contact with each other.

[0085] In this manner, the reinforcing film 103 and the reinforcing film 104 are formed of a material having a higher Young's modulus than the semiconductor film 106. By providing the semiconductor film 106 between the sclera 109, the semiconductor device In this case, the position of the neutral plane can be set to a position where the generation of stress in the semiconductor film 106 can be suppressed. Therefore, even if an external force such as bending is applied to the semiconductor device, the semiconductor film 106 In addition, the material has a higher Young's modulus than the semiconductor film. By providing the reinforcing film formed in the above and below the semiconductor film, the properties of the semiconductor film are changed. The mechanical strength of the semiconductor film can be increased without causing any damage to the reinforcing film 103. By providing the semiconductor film 106 in contact with the insulating film 109, the semiconductor film 106 is not exposed to impurities or moisture. Therefore, damage to elements such as transistors can be reduced, and the semiconductor device It is possible to achieve improvements in yield and reliability.

[0086] In this way, by using the structures shown in FIGS. 7 to 9, the manufacturing process of the semiconductor device Even if the semiconductor device is subjected to external forces such as bending during use after completion, the Therefore, the stress generated in the element such as a transistor can be suppressed. Therefore, damage to the semiconductor device can be reduced, and the yield and reliability of the semiconductor device can be improved.

[0087] The structure of the semiconductor device or the manufacturing method thereof shown in this embodiment mode may be different from that shown in other embodiment modes. The present invention can be implemented in combination with the structure or manufacturing method of a semiconductor device.

[0088] (Embodiment 4) In this embodiment, a semiconductor device different from that of the above embodiment will be described with reference to the drawings. In the first to third embodiments, the reinforcing film 103 overlaps the entire surface of the semiconductor film 106. However, the semiconductor device of the present embodiment is not limited to this structure. The film 103 and the semiconductor film 106 may have a structure in which they are at least partially overlapped. This will be described with reference to Fig. 10. In Fig. 10, Fig. 10(A) shows a top view. FIG. 10B shows a cross-sectional view taken along line AB in FIG. 10A.

[0089] In the semiconductor device shown in FIG. 10, the reinforcing film 103 is b is provided in an island shape so as to overlap with a part of the island-shaped semiconductor film 106 constituting b via the insulating film 104. In addition, when the reinforcing film 103 is provided in this manner, the reinforcing film 103 is in contact with the channel of the semiconductor film 106. The impurity region 106b is formed so as to overlap with the entire surface of the formation region 106a and with a part of the impurity region 106b. A conductive film that functions as a gate electrode at an end of the channel formation region 106a is preferably used. A step is generated because the semiconductor film 106 is overcome by the reinforcing film 103. When the conductive film 108 is provided so as to overlap a part of the channel forming region 106a, the conductive film 108 and the semiconductor film 106 This is because there is a risk of a short circuit.

[0090] In addition, when the reinforcing film 103 is provided so as to overlap a part of the semiconductor film 106, It is preferable that the reinforcing film 103 and the second conductive film 111 are provided so as to overlap each other. In this example, the end of the second conductive film 111 is provided so as to overlap with the end of the second conductive film 111. By providing the reinforcing film 103 and the reinforcing film 109 so as to overlap the film 111, the semiconductor device In the thickness direction, no tensile or compressive stress distortion occurs due to deformation such as bending. The position of the neutral plane can be set to a position where the generation of stress in the semiconductor film can be suppressed. Therefore, during the manufacturing process of the semiconductor device or when it is used after completion, the semiconductor device may be bent or otherwise damaged. Even if an external force is applied, the stress generated in elements such as transistors can be suppressed. Therefore, damage to elements such as transistors can be reduced, and the yield and reliability of semiconductor devices can be improved. Sexual improvement can be achieved.

[0091] (Embodiment 5) In this embodiment mode, a semiconductor device different from that in the above embodiment mode will be described with reference to the drawings. Specifically, a film that serves as a reinforcing film for an element such as a transistor is provided above the thin film transistor. The provided semiconductor device will be described.

[0092] An example of a semiconductor device described in this embodiment mode will be described with reference to FIG.

[0093] The semiconductor device shown in FIG. 11 has an insulating film ( In the present embodiment, a reinforcing film 133 is provided via an insulating film 110. The reinforcing film 133 is a thin film transistor. The island-shaped semiconductor film 106 constituting the transistors 100a and 100b overlaps with an insulating film or the like. The semiconductor film 106 is provided in an island shape so as to have a larger area than the semiconductor film 106. Of course, the reinforcing film 133 does not need to overlap the entire surface of the semiconductor film 106. Alternatively, the reinforcing film 133 may be provided so as to overlap at least a part of the semiconductor film 106 .

[0094] In this manner, the reinforcing film 103 and the reinforcing film 104 are formed of a material having a higher Young's modulus than the semiconductor film 106. By providing the semiconductor film 106 between the sclera 109, the semiconductor device can be In this case, the position of the neutral plane can be set to a position where the generation of stress in the semiconductor film 106 can be suppressed. Therefore, even if an external force such as bending is applied to the semiconductor device, the semiconductor film 106 In addition, the material has a higher Young's modulus than the semiconductor film. By providing the reinforcing film formed in the above and below the semiconductor film, the properties of the semiconductor film are changed. Therefore, the mechanical strength of the semiconductor film can be increased without causing any damage to the semiconductor film. Damage to elements can be reduced, and the yield and reliability of semiconductor devices can be improved.

[0095] Note that the structure of the semiconductor device described in this embodiment mode is different from the structure of the semiconductor device described in other embodiment modes. This can be performed in combination with the synthesis of

[0096] (Embodiment 6) In this embodiment mode, an example of a usage mode of the semiconductor device described in the above embodiment mode will be described. Specifically, the following drawings show an example of application of a semiconductor device capable of contactless data input / output. The semiconductor device capable of inputting and outputting data without contact is used in various applications. Depending on the state, it may be called an RFID tag, ID tag, IC tag, IC chip, RF tag, wireless tag, It is also called an electronic tag or a wireless chip.

[0097] An example of a top surface structure of a semiconductor device described in this embodiment mode will be described with reference to FIG. The semiconductor device 140 shown in FIG. 12A includes a plurality of semiconductor devices constituting a memory section and a logic section. An integrated circuit 141 (also referred to as an element formation layer) in which elements such as thin film transistors are provided, The conductive layer 142 functions as an antenna. The integrated circuit 141 is electrically connected to the The elements such as transistors according to the above-mentioned embodiments can be applied.

[0098] In addition, Fig. 12(B) and (C) show schematic diagrams of the cross section of Fig. 12(A). Functions as an antenna The conductive layer 142 may be provided above elements constituting the memory portion and the logic portion. For example, For example, a structure that functions as an antenna may be provided above the structure shown in the third embodiment with an insulating film 143 interposed therebetween. A conductive layer 142 that functions as a conductive layer can be provided (see FIG. 12B). The insulating film 112 may be formed of the same material as that of the insulating film 112 described in the first embodiment. After a conductive layer 142 that functions as a conductive layer is separately provided on a substrate 144, the substrate 144 and the integrated circuit 1 are 41 can be provided by bonding the conductive layer 142 therebetween (FIG. 12( Here, the conductive layer 147 provided over the insulating film 143 and the conductive layer 148 functioning as an antenna are The conductive layer 142 is connected to the conductive layer 142 via conductive particles 145 contained in an adhesive resin 146. The electrodes are electrically connected to each other.

[0099] In this embodiment mode, the conductive layer 142 functioning as an antenna is provided in a coil shape. An example of applying an induction method or an electromagnetic coupling method will be shown, but the semiconductor device of this embodiment is not limited to this. It is also possible to use a microwave method. The shape of the conductive layer 142 functioning as an antenna can be appropriately determined depending on the wavelength of the electromagnetic wave.

[0100] For example, the semiconductor device 140 may use a microwave system (e.g., U When applying HF band (860MHz to 960MHz band, 2.45GHz band, etc.) The length of the conductive layer that functions as an antenna is determined by taking into account the wavelength of the electromagnetic wave used to transmit the signal. For example, the conductive layer functioning as an antenna may be formed in a linear shape (e.g., Dipole antennas (see Figure 13(A)), flat shapes (e.g., patch antennas (see Figure 1 3(B)) or ribbon-shaped (see Fig. 13(C) and (D)). The shape of the conductive layer 142 functioning as an antenna is not limited to a linear shape. Taking the wavelength into consideration, the light source 10 may be provided in a curved or meandering shape or in a shape that is a combination of these.

[0101] The conductive layer 142 functioning as an antenna can be formed by a CVD method, a sputtering method, a screen printing method, or a graphite method. Conductive materials are printed using printing methods such as via printing, droplet ejection, dispenser, plating, etc. The conductive materials are aluminum (Al), titanium (Ti), silver (Ag), and copper. (Cu), Gold (Au), Platinum (Pt), Nickel (Ni), Palladium (Pd), Tantalum (Ta), molybdenum (Mo), or other metal elements, or alloy materials containing such metal elements, The insulating film 10 is formed of a compound material and has a single layer structure or a laminated structure.

[0102] For example, when the conductive layer 142 functioning as an antenna is formed by screen printing, Conductive materials are made by dissolving or dispersing conductive particles with a particle size of several nm to several tens of μm in organic resin. The conductive particles 145 can be formed by selectively printing a paste. The following metals are available: silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pb), and zinc (Zn). Pd, Ta, Mo, Ti, etc. Alternatively, one or more metal particles or silver halide microparticles or dispersible nanoparticles may be used. In addition, the organic resin contained in the conductive paste acts as a binder, solvent, and dispersant for the metal particles. One or more selected from organic resins that function as a coating material and a coating agent can be used. Representative examples include organic resins such as epoxy resin and silicon resin. When forming the conductive paste, it is preferable to sinter it after extruding it. As a conductive paste material, fine particles (e.g., particles with a diameter of 1 nm or more and 100 nm or less) whose main component is silver are used. When using fine particles (fine particles of 100 μm or less), firing at a temperature range of 150°C to 300°C It can be cured to form a conductive layer. It is also made of solder or lead-free solder. In this case, it is preferable to use fine particles having a particle size of 20 μm or less. Solder and lead-free solder have the advantage of being low cost.

[0103] In this way, by applying the present invention to a semiconductor device capable of inputting and outputting data without contact, This is particularly effective when used in small semiconductor devices, as it allows for low power consumption. be.

[0104] Next, an example of the operation of the semiconductor device according to the present embodiment will be described.

[0105] The semiconductor device 80 has a function of contactlessly exchanging data, and includes a high-frequency circuit 81, a power supply circuit 8 2, reset circuit 83, clock generation circuit 84, data demodulation circuit 85, data modulation circuit 8 6, a control circuit 87 for controlling other circuits, a memory circuit 88, and an antenna 89 (See FIG. 14(A)). The high-frequency circuit 81 receives a signal from an antenna 89 and modulates the data. The power supply circuit 82 is a circuit that outputs a signal received from the circuit 86 through an antenna 89. The reset circuit 83 is a circuit that generates a power supply potential from a reset signal. The clock generating circuit 84 generates various clocks based on the received signal input from the antenna 89. The data demodulation circuit 85 demodulates the received signal and outputs it to the control circuit 87. The data modulation circuit 86 modulates the signal received from the control circuit 87. The control circuit 87 includes, for example, a chord extraction circuit 91, a chord determination circuit 92, a CRC determination circuit 93 and an output unit circuit 94 are provided. The extraction circuit 91 extracts each of the multiple codes contained in the command sent to the control circuit 87. The chord determination circuit 92 is a circuit that determines the chord corresponding to the extracted chord and the reference. The CRC check circuit 93 checks the contents of the command by comparing it with the This is a circuit that detects the presence or absence of a transmission error based on the received code. In addition to the above, the semiconductor memory device 1 includes a high-frequency circuit 81 and a power supply circuit 82, which are analog circuits.

[0106] Next, an example of the operation of the above-mentioned semiconductor device will be described. A radio signal is received. The radio signal is sent to a power supply circuit 82 via a high-frequency circuit 81, and a high-voltage A power supply potential (hereinafter, referred to as VDD) is generated. VDD is supplied to each circuit of the semiconductor device 80. The signal sent to the data demodulation circuit 85 via the high frequency circuit 81 is demodulated. (Hereinafter, referred to as demodulated signal). Furthermore, the signal is passed through a reset circuit 83 via a high frequency circuit 81. The demodulated signal and the demodulated signal that has passed through the clock generating circuit 84 are sent to the control circuit 87. The signal sent to the circuit 87 is passed through a code extraction circuit 91, a code decision circuit 92 and a CRC decision circuit 93. The analyzed signal is then stored in the memory circuit 88. The information on the semiconductor device stored in the output unit is output. The information of the encoded semiconductor device 80 is encoded through the knit circuit 94. The signal is passed through a data modulation circuit 86 and transmitted as a radio signal by an antenna 89. In the multiple circuits that make up the semiconductor device 80, a low power supply potential (hereinafter referred to as VSS) is shared. In general, VSS can be GND.

[0107] In this way, a signal is sent from the reader / writer to the semiconductor device 80, and The transmitted signal is received by a reader / writer, which reads the data from the semiconductor device. It becomes possible to take it.

[0108] In addition, the semiconductor device 80 does not have a power source (battery) and supplies the power voltage to each circuit. It can be a type that uses magnetic waves, or it can be equipped with a power source (battery) and uses electromagnetic waves and a power source (battery). The power supply voltage may be supplied to each circuit by a power supply (battery).

[0109] Next, an example of a usage form of a semiconductor device capable of non-contact data input / output will be described. A reader / writer 3200 is provided on the side of the mobile terminal including the display unit 3210, and A semiconductor device 3230 is provided on the side surface of the product 3220 (see FIG. 14(B)). When a reader / writer 3200 is held over a semiconductor device 3230 included in the The raw materials and origin of the product, inspection results for each production process, distribution history, and product description, etc. Information about the product is displayed. Also, when the product 3260 is transported by the belt conveyor, A reader / writer 3240 and a semiconductor device 3250 provided in a product 3260 are used to The product 3260 can be inspected (see FIG. 14C). The semiconductor device 80 described above can be applied as the semiconductor device 3250. By utilizing the semiconductor device according to the present embodiment in the system, it is possible to easily obtain information. This allows for high functionality and high added value to be achieved. The device can achieve low power consumption, making it possible to miniaturize the semiconductor device installed in the product. It is.

[0110] In addition to the above, the semiconductor device according to the present embodiment can be used in a wide range of applications, including non-contact applications. Any product that clarifies the history and other information of the object and is useful for production and management, etc. The semiconductor device according to the present embodiment can also be applied to Even if the device is damaged, damage to elements such as transistors can be reduced, so that the device can be used without damaging objects (living objects). Any object (including a wall or other structure) may be provided and used.

[0111] (Embodiment 7) In this embodiment mode, an example of a usage mode of the semiconductor device of the above embodiment mode will be described. The semiconductor device may be, for example, a banknote, a coin, a security, a bearer bond, or a certificate (such as a driver's license or a residence card). Citizen's certificates, etc.), packaging containers (wrapping paper, bottles, etc.), recording media (DVDs, video tapes, etc.) etc.), vehicles (bicycles, etc.), personal belongings (bags, glasses, etc.), food, plants, animals, human body IC tags are attached to items such as clothing, daily necessities, electronic devices, and luggage tags. It can be used as a bell, IC tag, or IC card.

[0112] In this specification, an IC card refers to an integrated circuit that is thinned into a plastic card. It is a card that can store information by embedding an IC chip. Depending on the reading and writing method, they are divided into "contact type" and "non-contact type". The card has a built-in antenna and can communicate with the terminal using weak radio waves. An IC tag is a tiny IC chip used to identify an object (especially for this purpose). The IC chip used for this purpose is also called an "ID chip." It is capable of transmitting and receiving information to and from a management system using radio waves. It is a meter-sized device that can communicate with a reader using radio or electromagnetic waves. There are various types of IC tags used in semiconductor devices that transmit and receive data. These include items such as IC labels, certificates, etc.

[0113] In this embodiment, with reference to FIG. 15, an application example of the semiconductor device of the above embodiment and An example of a product incorporating these semiconductor devices will now be described.

[0114] FIG. 15A shows an example of a state of a completed semiconductor device. A plurality of IC labels 3003 each having a semiconductor device 3002 built therein are formed on a sheet of paper. The IC label 3003 is stored in a box 3004. On the 003 page, you can see information about the product or service (product name, brand, trademark, trademark owner, distributor, etc.) The name of the manufacturer, etc., of the product is written on the semiconductor device that is built in. Product type) A unique ID number is attached, and it is protected against counterfeiting and intellectual property rights such as trademarks and patents. In addition, the semiconductor device can easily detect illegal acts such as copyright infringement and unfair competition. There is a lot of information that cannot be stated on the product container or label, such as the product's place of origin, place of sale, and quality. , raw materials, efficacy, purpose, quantity, shape, price, production method, usage method, production time, usage time, Expiration dates, instruction manuals, intellectual property information about products, etc. can be entered, allowing traders and Consumers can access this information using a simple reading device. In addition, while it is easy for producers to rewrite or erase information, it is difficult for traders and consumers to rewrite information. Well, it's designed so that it can't be erased.

[0115] FIG. 15(B) shows a label-shaped IC tag 3011 incorporating a semiconductor device 3012. By attaching an IC tag 3011 to a product, product management becomes easier. For example, In the event that a product is stolen, the culprit can be identified quickly by tracing the product's route. In this way, by providing IC tags, it is possible to realize a system with excellent traceability. Products can be distributed.

[0116] FIG. 15C shows one example of a completed state of an IC card 3021 incorporating a semiconductor device 3022. The IC card 3021 is an example. Repaid cards, electronic tickets, electronic money, telephone cards, membership cards, etc. Includes cards.

[0117] In the IC card shown in FIG. 15C, the transistors constituting the semiconductor device By using a thin film transistor as a filter, the bent shape shown in FIG. 15(D) can be realized. It can be used even if it is deformed.

[0118] FIG. 15(E) shows the completed state of the bearer bond 3031. The semiconductor device 3032 is embedded in the molded resin. The resin protects the body device. Here, the resin is filled with a filler. Bearer bonds 3031 can be created in the same way as IC labels, IC tags, and IC cards. The above bearer bonds include stamps, tickets, admission tickets, gift certificates, and book vouchers. These include stationery coupons, beer coupons, rice coupons, various gift coupons, various service coupons, etc., but of course In addition, the following items are not limited to: banknotes, coins, securities, bearer bonds, certificates By providing a semiconductor device 3032 in the device, etc., an authentication function can be provided. By utilizing this function, counterfeiting can be prevented.

[0119] FIG. 22(A) shows a poster 3310 incorporating a semiconductor device 3300 and a reader / writer on the side. The semiconductor device 3300 may be a product, an electronic device, or a portable terminal. Information related to events, companies, etc. is stored. When a mobile terminal equipped with a reader / writer 3320 is brought close to the star 3310, The information stored in the device 3300 can be read by the reader / writer 3320. From the information you read, you can also access websites to find out more information.

[0120] FIG. 22B shows a business card 3350 incorporating the semiconductor device 3340. 0 stores information about the person (company name, address, phone number, etc.) and can be used on mobile devices and By reading the ID with a reader / writer installed in a computer, etc., the person's information can be It can be stored on a mobile device, computer, etc.

[0121] FIG. 22C shows a ticket 3370 incorporating the semiconductor device 3360. The Ticket 3370, which has a built-in 0, uses radio waves, so the Ticket 3370 and the ticket gate ( It can read even when the reader / writer is far away or the ticket is hidden. Since there is no need to insert the card into the ticket gate to read it, it is possible to reduce reading errors. In addition, since the information stored in the semiconductor device 3360 can be rewritten, , can be reused.

[0122] Although not shown here, books, packaging containers, recording media, personal belongings, food, clothing, etc. By installing semiconductor devices in products, daily necessities, electronic devices, etc., systems such as inspection systems can be Furthermore, by providing a semiconductor device in a vehicle, it is possible to prevent counterfeiting and theft. In addition, by implanting it in animals and other living things, it is possible to prevent damage to individual living things. It is easy to identify things. For example, radio tags can be embedded in animals such as livestock. This makes it possible to easily identify the year of birth, sex, species, etc.

[0123] As described above, the semiconductor device according to the above embodiment has a high resistance to bending and other external forces. Since this reduces damage to elements such as transistors, it is possible to Any suitable device may be provided and used.

[0124] (Embodiment 8) In this embodiment mode, an example of a usage mode of the semiconductor device of the above embodiment mode will be described. The semiconductor device of the embodiment has flexibility by being peeled off from the substrate on which it is manufactured. The following is a specific example of an electronic device having the semiconductor device according to the above embodiment. An example of the electronic device will be described with reference to FIG. 16. The electronic device may be a liquid crystal display device, an EL display device, a television, or the like. Television equipment (also called simply television, television receiver, or television set) and portable telephones Refers to stories etc.

[0125] FIG. 16A shows a display 4101 including a support base 4102 and a display unit 4103. The display portion 4103 is formed using a flexible substrate, and is a lightweight and thin display. In addition, the display unit 4103 can be curved, and the support base 410 It is also possible to remove it from the stand and mount the display along a curved wall. The semiconductor device shown in this embodiment mode is used in an integrated circuit such as the display portion 4103 or a peripheral driver circuit. By this, a flexible display, which is one of the usage forms of the semiconductor device, can be manufactured. In this way, a display having flexibility can be used not only as a flat surface but also as a It can also be installed on curved parts, making it suitable for a variety of applications.

[0126] FIG. 16B shows a rollable display 4202, which includes a display portion 4201. The semiconductor device described in the above embodiment mode can be used in an integrated circuit such as the display portion 4201 or a driver circuit. This allows the semiconductor device to be used in a wide range of applications, including rollable, thin, large-sized displays. The rollable display 4202 can be manufactured using a flexible substrate. Since the display unit 4201 is formed using the Therefore, the rollable display 4202 is large. Even in the event of an emergency, it can be folded or rolled up and carried in a bag.

[0127] FIG. 16C shows a sheet-type computer 4301, which includes a display unit 4302, a keyboard, and 4303, touch pad 4304, external connection port 4305, power plug 4306, etc. The semiconductor device described in the above embodiment mode can be used for the display portion 4302, a driver circuit, a data processing circuit, By using it in an integrated circuit such as a circuit, it is possible to realize a thin or A sheet-type computer can be manufactured. The display portion 4302 is made of a flexible substrate. It is made of a plate, which allows for a lightweight and thin computer to be realized. A storage space is provided in the main body of the computer 4301 to accommodate the display unit 4302. It can be rolled up and stored in the main body. The keyboard 4303 is also flexible. By providing the display unit 4302 in the same manner as the sheet-type computer 4301, It can be rolled up and stored in the storage space, making it convenient to carry. Even when not in use, it can be folded up for storage without taking up space.

[0128] FIG. 16(D) shows a display device 4400 having a large display unit of 20 to 80 inches. The device includes a keyboard 4402, a display unit 4401, a speaker 4403, and the like, which are operational units. The display unit 4401 is formed using a flexible substrate, and a keyboard 4402 is attached. The display device 4400 can be removed and folded or rolled up for easy carrying. The keyboard 4402 and the display unit 4401 can be connected wirelessly. For example, A display device 4400 is attached along a curved wall, and a keyboard 4402 is used for wireless communication. It can be operated by

[0129] In the example shown in FIG. 16D, the semiconductor device described in the above embodiment mode is used in the display portion 4401 or Integrated circuits such as a display driver circuit and a wireless communication circuit that controls communication between the display and the keyboard This allows the semiconductor device to be used in a thin, large display device. It can be made.

[0130] FIG. 16E shows an electronic book 4501, which includes a display unit 4502, operation keys 4503, etc. The modem may be built in the electronic book 4501. The display portion 4502 is made of a flexible substrate. It is made of a plate and can be folded and rolled up. The child book can be carried around without taking up much space. It is possible to display not only still images such as these but also videos.

[0131] In the example shown in FIG. 16E, the semiconductor device described in the above embodiment mode is used for the display portion 4502, the drive These are used in integrated circuits such as driving circuits and control circuits. It is possible to create a thin e-book, which is one of the features of the electronic book.

[0132] FIG. 16(F) shows an IC card 4601, which includes a display portion 4602, a connection terminal 4603, etc. The display unit 4602 is made of a flexible substrate and is a lightweight, thin sheet. The IC card can be attached to the surface of the device. When possible, information acquired from an external source can be displayed on the display unit 4602. .

[0133] In the example shown in FIG. 16F, the semiconductor device described in the above embodiment mode is used in the display portion 4602 and the infrared ray tube. This is one of the uses of semiconductor devices. This makes it possible to create thin IC cards.

[0134] In this way, by using the semiconductor device according to the above-mentioned embodiment in an electronic device, It is possible to manufacture electronic devices that can withstand external forces such as bending. In addition, the position of the neutral plane in the thickness direction of the electronic device is determined by the stress generated in the semiconductor film 106. Therefore, even if external force such as bending is applied to the electronic device, Even if a stress is generated, it is possible to suppress the generation of stress in the semiconductor film 106. Damage to the conductive film 106 can be reduced, and the yield and reliability of electronic devices can be improved. This can be done.

[0135] As described above, the scope of application of the present invention is extremely wide, and it can be applied to electronic devices and information display devices in all fields. It can be used for stages. EXAMPLES

[0136] In this embodiment, when an external force such as bending is applied to the semiconductor device according to the first embodiment, The stress distribution in the membrane was verified by calculation (simulation). The first reinforcing film and the second reinforcing film are capable of suppressing the stress generated in the semiconductor film from the distribution. The results of verifying the optimum film thickness through calculation are shown below.

[0137] In order to obtain the optimal thickness of the first reinforcing membrane and the second reinforcing membrane, the thickness of the first reinforcing membrane and the thickness of the second reinforcing membrane are compared. The thickness of the reinforcing membrane was varied and a finite element analysis was performed simulating a four-point bending test. From the stress distribution obtained, the stress distribution in the semiconductor device was calculated. The maximum value of the von Mises equivalent stress occurring in the region (the region where the core is formed) was obtained. The von Mises equivalent stress is the stress obtained from a commonly used computer simulation. This value can be obtained by converting the directional stress into a scalar quantity.

[0138] The stress distribution occurring in semiconductor devices is calculated using commonly used computer simulation software such as stress analysis software. The analysis model can be created from the components that make up the semiconductor device. The size, shape, and Young's modulus of each component of the analysis model are input into the computer stress analysis software. , Poisson's ratio, load and other parameters to determine how bending affects each part. The components referred to here are the insulating film, reinforcing film, semiconductor film, and gate In addition to the above-mentioned components such as gate insulating films and gate electrodes, In this embodiment, the stress analysis software is a product called "ANSYS" (Cybernet The test was performed using a FT-IR ...CT scanner (manufactured by System Co., Ltd.).

[0139] FIG. 17 shows the analytical model used in the calculations.

[0140] Silicon oxynitride (thickness: 200 nm) is used as the insulating film 202 that functions as a buffer layer. The first reinforcing film 203 is made of silicon nitride (thickness: 0 nm, 50 nm) on the insulating film 202. The conditions were as follows: 100 nm, 150 nm, 200 nm, and 400 nm. The film 204 is made of silicon oxynitride (thickness 100 nm), and the insulating film 202 and the reinforcing film 203 The island-shaped semiconductor film 206 is made of silicon (thickness 66 nm), and the gate The insulating film 207 is made of silicon oxide (thickness: 20 nm), and the conductive film 208 functions as a gate electrode. The second reinforcing film 209 was made of silicon nitride ( Film thickness: 0 nm, 100 nm, 150 nm, 200 nm, 400 nm) Interlayer insulation The film 210 is silicon oxynitride (thickness 1.5 μm) and functions as a source electrode or a drain electrode. The conductive film 211 is made of aluminum (700 nm thick), and the insulating film 212 is made of polyimide ( The external dimensions of the semiconductor device are 50 μm × 3.32 μm. To simplify the calculation, the sheet (or substrate) was omitted from the calculation.

[0141] Table 1 shows the Young's modulus and Poisson's ratio of the parts used in the calculation.

[0142] [Table 1]

[0143] In addition, the support points 213 in FIG. 17 were set 8 μm away from both ends of the simulation model. As shown by the arrow 214, a four-point bending test was performed with a load of 0.05 N applied to the simulation model. It was assumed that.

[0144] 18 and 19 show the stresses generated in the semiconductor device as a result of finite element analysis using analysis software. FIG. 18(A) shows the distribution when the first reinforcing film and the second reinforcing film are not provided. FIG. 18(B) shows a case where a first reinforcing film and a second reinforcing film are provided. FIG. 19(B) shows the case where only the first reinforcing film is provided, and FIG. 19(C) shows the case where only the second reinforcing film is provided. In addition, the stress distribution shows that darker areas indicate higher stress values.

[0145] The stresses calculated by the finite element method depend on the structure of the model and include stresses of various properties. Therefore, in this embodiment, the stress calculated by the finite element method is converted to the Mises equivalent stress. In addition, the stress generated in the thin film transistor was evaluated by focusing on the susceptibility to damage. The stress in the channel forming region 206a is taken as the von Mises stress in the channel forming region 206a. The evaluation was based on the maximum equivalent stress.

[0146] Table 2 shows the stress generated in the channel formation region 206a in terms of the maximum value of the von Mises equivalent stress.

[0147] [Table 2]

[0148] 20 and 21 show the stress distribution in the channel formation region obtained by using the finite element method. Figures 20 and 21 show the channel formation region in an enlarged view. The darker areas show the stress distribution. The stress distribution other than that of the semiconductor film 206 is not shown.

[0149] In FIG. 20(A), the first reinforcing film 203 and the second reinforcing film 209 are not provided (the first reinforcing film The stress distribution in the channel formation region in the cases of (1) the thickness of the first reinforcing film being 0 nm and (2) the thickness of the second reinforcing film being 0 nm is shown in Fig. In the channel formation region, high stress occurs in the center below the channel formation region. This indicates that the neutral plane of the semiconductor device is located on the gate electrode side. The maximum value of the von Mises equivalent stress in this case is 44 MPa.

[0150] In FIG. 20(B), a first reinforcing film and a second reinforcing film are provided (the film thickness of the first reinforcing film is 100 nm). m, the stress distribution in the channel formation region when the second reinforcing film is 300 nm thick. When the first reinforcing film and the second reinforcing film are provided, the pressure in the channel forming region is 30 MPa or more. This is because, compared to the case of FIG. This is because the position of the neutral plane of the first reinforcing membrane 203 has moved to the side of the first reinforcing membrane 203. The maximum value of the stress is 27 MPa, which is approximately 40% lower than that in FIG. 20(A). I was able to do it.

[0151] In addition, in FIG. 21(A), when only the first reinforcing film is provided (film thickness of the first reinforcing film is 100 nm), 1 shows the stress distribution occurring in the channel formation region when only the first reinforcing film 203 is provided. The position of the neutral plane of the semiconductor device is further toward the first reinforcing film 203 than in the case of FIG. 20(B). As a result, high stress is generated at the top end of the channel formation region. The maximum equivalent stress was 56 MPa.

[0152] In addition, in FIG. 21(B), when only the second reinforcing film is provided (film thickness of the second reinforcing film is 300 nm), The figure shows the stress distribution in the channel formation region when only the second reinforcing film is provided. The position of the neutral plane of the device is moved closer to the gate electrode than in the case of FIG. 20(A). High stress occurs at the center of the lower part of the hole formation region. The maximum value of the von Mises equivalent stress at this time is The pressure was 49MPa.

[0153] FIG. 20(A) shows a case where the first reinforcing film and the second reinforcing film are not provided, and FIG. In the case where the first reinforcing film and the second reinforcing film shown in B) are provided, the channel formation Comparing the stress distribution in the area, the von Mises equivalent stress was reduced by 40%. This is because the position of the neutral plane in the semiconductor device is improved by providing reinforcing films above and below the semiconductor film. This is because the stress generated in the channel formation region could be suppressed by changing the position.

[0154] As shown in Figs. 21(A) and 21(B), only the first reinforcing film or only the second reinforcing film is provided. In the case where the reinforcing film is provided, the stress generated in the channel forming region is larger than that in the case where the reinforcing film is not provided. Therefore, it is not always possible to suppress the stress generated in the channel formation region. Understood.

[0155] From the analysis results, the von Mises equivalent stress that occurs when the first and second reinforcing membranes are not provided is The maximum stress was 44 MPa, so the thickness of the first reinforcing film was 50 nm to 200 nm. The thickness of the second reinforcing film may be selected in the range of 100 nm to 400 nm. In addition, when the thickness of the second reinforcing film is thicker than that of the first reinforcing film, It was found that the maximum equivalent stress of the pores can be reduced by adjusting the thickness of the first reinforcing film and The ratio of the thickness of the second reinforcing film (thickness of the first reinforcing film / thickness of the second reinforcing film) is 1 / 2 or less. It was found that the maximum value of the von Mises equivalent stress can be reduced even in this case.

[0156] In this way, the semiconductor film is sandwiched between reinforcing films made of a material with a higher Young's modulus than the semiconductor film. By providing the semiconductor device in this manner, the position of the neutral plane in the thickness direction of the semiconductor device can be adjusted according to the stress applied to the semiconductor film. In other words, the neutral plane of the semiconductor device can be moved to a position where the occurrence of the Therefore, the position of the semiconductor device can be moved to a position suitable for the semiconductor device. Even if an external force such as bending is applied to the semiconductor film, the generation of stress in the semiconductor film can be suppressed. Therefore, damage to elements such as transistors can be reduced, and the yield of semiconductor devices can be improved. Improved reliability can be achieved. [Explanation of symbols]

[0157] 80 Semiconductor Devices 81 High Frequency Circuits 82 Power supply circuit 83 Reset Circuit 84 Clock Generation Circuit 85 Data demodulation circuit 86 Data Modulation Circuit 87 Control circuit 88 Memory circuit 89 Antenna 91 Code Extraction Circuit 92 Code Judgment Circuit 93 CRC Check Circuit 94 Output unit circuit 100a Thin film transistor 100b thin film transistor 101 Substrate 102 Insulating film 103 Reinforced membrane 104 Insulating film 106 Semiconductor Film 106a Channel formation region 106b Impurity region 106c impurity region 107 Gate insulating film 108 Conductive Film 109 Reinforced membrane 110 Insulating film 111 Conductive film 112 Insulating film 114 Reinforced membrane 116 Insulating film 118 Conductive Film 120 Substrate 121 Peeling layer 122 Conductive Film 123 Conductive Film 124 Opening 125 Reinforced membrane 126 sheets 127 sheets 128 Impurity region 129 Insulating Film 130 Insulating film 131 Reinforced membrane 132 areas 133 Reinforced Membrane 134 Device formation layer 140 Semiconductor devices 141 Integrated Circuits 142 Conductive Layer 143 Insulating Film 144 Substrate 145 Conductive Particles 146 Resin 147 Conductive Layer 150 Reader / Writer 151 Display section 152 items 153 Semiconductor Devices 154 Reader / Writer 155 Semiconductor Devices 156 items 202 Insulating film 203 Reinforced membrane 204 Insulating film 206 Semiconductor Film 206a Channel formation region 207 Gate insulating film 208 Conductive Film 209 Reinforced membrane 210 Interlayer insulating film 211 Conductive film 212 Insulating film 213 Fulcrum 214 Arrow 3001 Label mount 3002 Semiconductor devices 3003 IC Label 3004 Box 3011 IC tag 3012 Semiconductor device 3021 IC Card 3022 Semiconductor device 3031 Bearer Bond 3032 Semiconductor devices 3200 Reader / Writer 3210 Display section 3220 Items 3230 Semiconductor equipment 3240 Reader / Writer 3250 Semiconductor Equipment 3260 items 3300 Semiconductor equipment 3310 Poster 3320 Reader / Writer 3330 Mobile Terminal 3340 Semiconductor equipment 3350 Business Cards 3360 Semiconductor equipment 3370 tickets 4101 Display 4102 Support stand 4103 Display section 4201 Display section 4202 Display 4301 Computers 4302 Display section 4303 Keyboard 4304 Touchpad 4305 External connection port 4306 Power plug 4400 display device 4401 Display section 4402 Keyboard 4403 Speaker 4501 E-books 4502 Display section 4503 Operation key 4601 IC Card 4602 Display section 4603 Connection terminal

Claims

1. A first transistor and a second transistor are provided over a flexible substrate; the first transistor includes a first layer, a first semiconductor layer, a first conductive layer, a first source electrode, and a first drain electrode; the second transistor includes a second layer, a second semiconductor layer, a second conductive layer, a second source electrode, and a second drain electrode; the first semiconductor layer is provided on the first layer; the first conductive layer is provided on the first semiconductor layer; the first source electrode is electrically connected to the first semiconductor layer; the first drain electrode is electrically connected to the first semiconductor layer; the first conductive layer functions as a first gate electrode of the first transistor; the first semiconductor layer has a first channel formation region in a region overlapping with the first gate electrode; the second semiconductor layer is provided on the second layer; the second conductive layer is provided on the second semiconductor layer; the second source electrode is electrically connected to the second semiconductor layer; the second drain electrode is electrically connected to the second semiconductor layer; the second conductive layer functions as a second gate electrode of the second transistor; the second semiconductor layer has a second channel formation region in a region overlapping with the second gate electrode; a third layer on the first conductive layer; the third layer on the second conductive layer; an insulating film on the third layer; When viewed from above the third layer, the first layer has a region that extends beyond an edge of the first semiconductor layer; when viewed from above the third layer, the third layer has an area that extends beyond an edge of the first semiconductor layer; when viewed from above the third layer, the second layer has an area that extends beyond an edge of the second semiconductor layer; when viewed from above the third layer, the third layer has an area that extends beyond an edge of the second semiconductor layer; In a region between the first semiconductor layer and the second semiconductor layer, a part of a lower surface of the third layer is located lower than a lower surface of the first semiconductor layer; a portion of a lower surface of the third layer is located lower than a lower surface of the second semiconductor layer; a part of a lower surface of the insulating film is located lower than a lower surface of the first semiconductor layer, a part of a lower surface of the insulating film is located lower than a lower surface of the second semiconductor layer, a part of a lower surface of the insulating film is located below an upper surface of the first layer; a part of a lower surface of the insulating film is located below an upper surface of the second layer; the first layer comprises silicon nitride; the second layer comprises silicon nitride; the third layer comprises silicon nitride; the first source electrode is electrically connected to the first semiconductor layer through a first opening provided in the third layer; the first drain electrode is electrically connected to the first semiconductor layer through a second opening provided in the third layer; the second source electrode is electrically connected to the second semiconductor layer through a third opening provided in the third layer; the second drain electrode is electrically connected to the second semiconductor layer through a fourth opening provided in the third layer.

2. In claim 1, The thickness of the first layer is 50 nm or more and 200 nm or less, The second layer has a thickness of 50 nm or more and 200 nm or less, The semiconductor device, wherein the third layer has a thickness of 100 nm or more and 400 nm or less.

Images