Display device

Abstract

To provide a semiconductor device with low wiring resistance, a semiconductor device with high transmittance, or a semiconductor device with a high opening ratio.SOLUTION: A gate electrode, a semiconductor layer, and a source electrode or a drain electrode are formed of a material with a light-transmitting property. A wire such as a gate wire or a source wire is formed of a material with lower resistivity than that of the material with a light-transmitting property. The source wire and / or the gate wire is formed by stacking the material with a light-transmitting property and the material with lower resistivity than that of the material with a light-transmitting property. Thus, a semiconductor device with low wiring resistance and high transmittance can be provided.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, a display device, a light emitting device, or a method for manufacturing the same. A semiconductor device having a circuit formed of a thin film transistor using an oxide semiconductor film in a panel formation region. The present invention relates to a body device and a method for making the same. [Background technology]

[0002] Currently, amorphous silicon is used as a switching element in display devices such as liquid crystal displays. Thin-film transistors (TFTs) that use a silicon layer such as a capacitor as a channel layer are widely used. Thin-film transistors using amorphous silicon have low field-effect mobility, but This has the advantage that it can accommodate the increase in the area of ​​glass substrates.

[0003] Recently, thin-film transistors have been fabricated using metal oxides that exhibit semiconducting properties, and electronic devices have been developed. For example, among metal oxides, the technology of applying it to devices and optical devices is attracting attention. It is known that tin oxide, indium oxide, zinc oxide, etc. exhibit semiconductor properties. A thin film transistor in which a transparent semiconductor layer made of such a metal oxide is used as a channel forming region. A transistor is disclosed in Patent Document 1.

[0004] In addition, a channel layer of the transistor is formed using a light-transmitting oxide semiconductor layer. The gate electrode, source electrode, and drain electrode are also formed of a transparent conductive film having light transmitting properties. Therefore, techniques for improving the aperture ratio are being studied (Patent Document 2).

[0005] By improving the aperture ratio, the light utilization efficiency is improved, and the power consumption and size of the display device are reduced. On the other hand, from the viewpoint of larger display devices and application to mobile devices, Therefore, there is a demand for further reduction in power consumption along with improvement in aperture ratio.

[0006] As a method for wiring metal auxiliary wiring to the transparent electrodes of the electro-optical element, In either case, the metal auxiliary wiring is wired so that it overlaps with the transparent electrode to provide electrical continuity with the transparent electrode. It is known that such a method is used (see, for example, Patent Document 3).

[0007] The additional capacitance electrodes provided on the active matrix substrate are made of ITO and SnO 2 etc. transparent The electrode is made of a conductive film, and in order to reduce the electrical resistance of the electrode for the additional capacitance, the electrode is made of a metal film. A configuration is known in which an auxiliary wiring is provided in contact with an electrode for additional capacitance (see, for example, Patent Document 4). ).

[0008] In a field-effect transistor using an amorphous oxide semiconductor film, The source and drain electrodes were made of indium tin oxide (ITO), indium Zinc oxide, ZnO, SnO 2 Transparent electrodes such as Al, Ag, Cr, Ni, Mo, Au Metal electrodes such as Ti, Ta, etc., or metal electrodes of alloys containing these metals can be used. However, it is known that stacking two or more layers of them can reduce contact resistance and improve interface strength. (See, for example, Patent Document 5).

[0009] In addition, the source electrode, drain electrode and The materials for the gate electrode and the auxiliary capacitance electrode are indium (In), aluminum (Al), and gold ( Au), silver (Ag), and other metals, as well as indium oxide (In 2 O 3), tin oxide (SnO 2 ) , zinc oxide (ZnO), cadmium oxide (CdO), cadmium indium oxide (CdI n 2 O 4 ), Cadmium tin oxide (Cd 2 SnO 4 ), zinc tin oxide (Zn 2 SnO 4 ) The materials for the gate electrode, source electrode, and drain electrode can be It is known that all of the above may be the same or different (see, for example, Patent Documents 6 and 7). ). [Prior art documents] [Patent documents]

[0010] [Patent Document 1] JP 2004-103957 A [Patent Document 2] JP 2007-81362 A [Patent Document 3] Japanese Patent Application Publication No. 2-82221 [Patent Document 4] Japanese Patent Application Publication No. 2-310536 [Patent Document 5] JP 2008-243928 A [Patent Document 6] JP 2007-109918 A [Patent Document 7] JP 2007-115807 A Summary of the Invention [Problem to be solved by the invention]

[0011] An object of one embodiment of the present invention is to provide a semiconductor device having low wiring resistance. An object of one embodiment of the present invention is to provide a semiconductor device having high transmittance. An object of one embodiment of the present invention is to provide a semiconductor device with a high aperture ratio. Another object of one embodiment of the present invention is to provide a semiconductor device with low power consumption. The present invention aims to provide a semiconductor device that supplies a precise voltage. An object of one embodiment of the present invention is to provide a semiconductor device in which a voltage drop is reduced. An object of one embodiment of the present invention is to provide a semiconductor device with improved display quality. An object of one embodiment of the present invention is to provide a semiconductor device with reduced contact resistance. Another object of one embodiment of the present invention is to provide a semiconductor device with reduced flicker. Another object of one embodiment of the present invention is to provide a semiconductor device with low off-state current. The description of these problems does not preclude the existence of other problems. It is understood that an embodiment does not necessarily address all of the above problems. [Means for solving the problem]

[0012] In order to solve the above problems, one embodiment of the present invention is a gate electrode, a semiconductor layer, a source electrode, or The drain electrode is formed using a light-transmitting material, and is connected to wiring such as a gate wiring or a source wiring. The wire is made of a material that has a lower resistivity than the light transmitting material.

[0013] Another embodiment of the present invention is a semiconductor device including a first electrode formed using a first conductive layer having a light-transmitting property and a first a first conductive layer and a second conductive layer having a lower resistance than the first conductive layer; A first wiring provided in a laminated structure of the above, and an insulating layer provided on the first electrode and the first wiring. a second electrode formed of a third conductive layer having a light-transmitting property on the insulating layer; a third conductive layer and a fourth conductive layer having a lower resistance than the third conductive layer; and a third wiring formed of a fifth conductive layer having a light-transmitting property. a second electrode and a third electrode provided on the insulating layer so as to overlap the first electrode; A semiconductor device having a semiconductor layer provided on an electrode is provided.

[0014] Another embodiment of the present invention is a semiconductor device including a first electrode formed using a first conductive layer having a light-transmitting property and a first a first conductive layer and a second conductive layer having a lower resistance than the first conductive layer; The first wiring is provided in a laminated structure of the first conductive layer and the second conductive layer is provided in a third conductive layer having a light-transmitting property. A wiring, a first electrode, an insulating layer provided on the first wiring and the second wiring, and a a second electrode provided as a fourth conductive layer having a light-transmitting property; The fourth conductive layer and the fifth conductive layer having a lower resistance than the fourth conductive layer are laminated together. a third wiring formed on the first conductive layer, a third electrode formed on the second conductive layer, and a sixth conductive layer having a light-transmitting property. A seventh conductive layer having a light-transmitting property is provided on the line through an insulating layer, and a first electrode is provided on the insulating layer. A semiconductor layer is provided so as to overlap the second electrode and the third electrode. The present invention provides a semiconductor device having a

[0015] The switch may take various forms. For example, an electrical switch may be used. In other words, anything that can control the flow of electric current is sufficient. There is no particular limitation. For example, a transistor (e.g., a bipolar transistor) can be used as a switch. transistors, MOS transistors, etc.), diodes (e.g., PN diodes, P IN diode, Schottky diode, MIM (Metal Insulator Metal diode, MIS (Metal Insulator Semiconductor) (uctor) diode, diode-connected transistor, etc. Alternatively, a logic circuit that combines these can be used as a switch.

[0016] An example of a mechanical switch is the Digital Micromirror Device (DMD). There are switches that use MEMS (microelectromechanical systems) technology. The switch has an electrode that can be moved mechanically, and the movement of the electrode causes The transistor operates by controlling conduction and non-conduction.

[0017] When a transistor is used as a switch, the transistor acts simply as a switch. However, the polarity (conductivity type) of the transistor is not particularly limited. To suppress the off-state current, it is desirable to use a transistor with a polarity that reduces the off-state current. As transistors with low current, transistors with LDD regions and multi-gate structures are There are transistors with a structure that operates as a switch. The potential of the source terminal operates at a value close to the potential of the low-potential power supply (Vss, GND, 0V, etc.). In this case, it is preferable to use an N-channel transistor. However, when it operates at a potential close to the high-potential power supply (such as Vdd), it is a P-channel transistor. It is preferable to use an N-channel transistor because the source terminal is low. When operating at a potential close to that of the potential side power supply, the source terminal of a P-channel transistor When operating close to the high-potential power supply, the absolute value of the gate-source voltage is increased. This is because the switch can operate more accurately because the distance between the switch and the switch can be reduced. Since the transistor rarely operates as a source follower, the output voltage is This is because it is unlikely that the value will become small.

[0018] In addition, CMOS transistors are used to realize a A CMOS switch can be used as the switch. Either the N-channel transistor or the N-channel transistor is conductive. If the input voltage to the switch is 1 V, a current will flow, making it easier to function as a switch. Regardless of whether the signal voltage is high or low, the voltage can be appropriately output. In addition, the voltage amplitude of the signal for turning the switch on or off can be reduced. Therefore, power consumption can also be reduced.

[0019] When using a transistor as a switch, the switch must be connected to the input terminal (source terminal or The output terminal (the other of the source terminal or drain terminal) and the conductor The diode is used as a switch. In some cases, the switch does not have a terminal for controlling the conduction. Using diodes as switches rather than transistors reduces the amount of wiring required to control the terminals. It is possible to eliminate it.

[0020] In addition, when it is explicitly stated that A and B are connected, it means that A and B are electrically connected. A and B are connected functionally, A and B are directly connected, Here, A and B are objects (e.g., devices, elements, circuits, etc.). , wiring, electrodes, terminals, conductive films, layers, etc.). Therefore, a given connection relationship, For example, the present invention is not limited to the connection relationships shown in the drawings or text, and may be modified in any way without departing from the spirit or scope of the present invention. This also includes matters other than those involved.

[0021] For example, if A and B are electrically connected, then the following can be used to electrically connect A and B: The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more electrodes (e.g., anode) may be connected between A and B. Alternatively, A and B may In the case of functional connection, a circuit that allows the functional connection between A and B (e.g. , logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits, (e.g. step-down circuits, level shifter circuits that change the potential level of signals, etc.), voltage sources, current sources, Switching circuits, amplifier circuits (circuits that can increase the signal amplitude or current, etc., operational amplifiers, Differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control One or more control circuits, etc., may be connected between A and B. For example, If the signal output from A is transmitted to B, even if there is another circuit between A and B, It is assumed that they are functionally connected.

[0022] In addition, when it is explicitly stated that A and B are electrically connected, it means that A and B are electrically When A and B are directly connected (i.e., when another element or circuit is placed between A and B), A and B are functionally connected (i.e., there is another When A and B are connected directly (when they are functionally connected across a circuit) (i.e., when A and B are connected without any other element or circuit between them) In other words, when it is explicitly stated that something is electrically connected, it should simply be "" is the same as if it were expressly stated that the

[0023] Note that the following elements may be used: a display element, a display device having a display element, a light-emitting element, and a device having a light-emitting element. The light emitting device can have a variety of configurations and elements. As the display element, the display device, the light-emitting element or the light-emitting device, EL (electroluminescence EL elements (EL elements containing organic and inorganic materials, organic EL elements, inorganic EL elements), LED (white LED, red LED, green LED, blue LED, etc.), transistor (depending on current) transistors that emit light when exposed to light, electron emitters, liquid crystal elements, electronic ink, electrophoretic elements, grayscale Light bulbs (GLV), plasma displays (PDP), digital microphones DMD, piezoelectric ceramic display, carbon nanotube, etc. A display medium whose contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic effects. The display device using the EL element may be an EL display, A display device using electron emission elements is called a field emission display (FED). and SED type flat panel displays (SED: Surface-conduction E As a display device using liquid crystal elements, such as a LC-emitter display (LCD) LCDs (transmissive LCDs, semi-transmissive LCDs, reflective LCDs) LCDs, direct-view LCDs, projection LCDs), electronic ink and An example of a display device using electrophoretic elements is electronic paper.

[0024] The EL element is a device having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. The EL layer is made up of three types of layers: those that utilize light emission (fluorescence) from singlet excitons, Those that utilize light emission from doublet excitons (phosphorescence) and those that utilize light emission from singlet excitons (fluorescence). Some of them use light emitted from triplet excitons (phosphorescence), while others use organic materials. Those formed by inorganic matter, those formed by organic matter, and those formed by inorganic matter. Materials formed by the structure, including polymeric materials, low molecular weight materials, polymeric materials However, the present invention is not limited to the above, and may include materials including low molecular weight materials. There can be a variety of L elements.

[0025] An electron-emitting device is a device that extracts electrons by concentrating a high electric field on a cathode. For example, As electron emitters, Spindt type, carbon nanotube (CNT) type, metal-insulator- Metal-insulator-metal (MIM) type, with metal laminated MIS (Metal-Insulator-Semiconductor) tor type, MOS type, silicon type, thin film diode type, diamond type, surface conduction emitter Thin film types such as SCD type, metal-insulator-semiconductor-metal type, HEED type, EL type, polar The type may be a silicon type, a surface conduction (SCE) type, etc. However, the present invention is not limited to these. In addition, the electron-emitting device may have a variety of electron-emitting elements.

[0026] A liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of liquid crystals. The liquid crystal is a device that consists of a pair of electrodes and liquid crystal. Controlled by the electric field applied to the crystal (including the transverse electric field, the vertical electric field, or the diagonal electric field) The liquid crystal elements include nematic liquid crystal, cholesteric liquid crystal, smectic liquid crystal, Liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, low molecular weight liquid crystal, Polymer liquid crystal, polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain liquid crystal, Side-chain polymer liquid crystal, plasma-addressed liquid crystal (PALC), banana-shaped liquid crystal, TN (Twis Twisted Nematic) mode, STN (Super Twisted Nematic) mode c) mode, IPS (In-Plane-Switching) mode, FFS (Fri nge Field Switching) mode, MVA (Multi-domain Vertical Alignment mode, PVA (Patterned Ve rtical Alignment), ASV(Advanced Super Vie) w) mode, ASM (Axially Symmetric aligned Micro o-cell mode, OCB (Optical Compensated Biref) ringence mode, ECB (Electrically Controlled Birefringence mode, FLC (Ferroelectric Liquid uid Crystal) mode, AFLC(AntiFerroelectric L iquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal mode, guest host mode, Blue phase Phase) mode, etc. can be used. However, it is not limited to this. A variety of different types of filters can be used.

[0027] In addition, electronic paper is displayed by molecules (optical anisotropy, dye molecule orientation, etc.). (electrophoresis, particle migration, particle rotation, phase change, etc.), Those that are displayed by the movement of one end of the film, and those that are displayed by coloring / phase changes of molecules. Some are displayed by molecular light absorption, while others are displayed by spontaneous light emission caused by the combination of electrons and holes. For example, electronic paper is a type of microcapsule electrophoretic display. , horizontally moving electrophoresis, vertically moving electrophoresis, spherical twist ball, magnetic twist ball , cylindrical twist ball method, charged toner, electronic liquid powder (registered trademark of Bridgestone Corporation) ), magnetophoretic type, magnetic heat sensitive type, electrowetting, light scattering (transparent, opaque), cores Cholesteric Liquid Crystal / Photoconductive Layer, Cholesteric Liquid Crystal, Bistable Nematic Liquid Crystal, Ferroelectric Liquid Crystal , dichroic dye / liquid crystal dispersion type, movable film, leuco dye coloring / decoloring, photochromic, electro It is possible to use chromic, electrodeposition, flexible organic electroluminescence, etc. However, the present invention is not limited to this, and various types of electronic paper can be used. Here, by using microcapsule electrophoresis, the disadvantages of the electrophoretic method are eliminated. It can solve the aggregation and precipitation of electrophoretic particles. Electronic powder has high speed response and high reflectivity. It has advantages such as high efficiency, wide viewing angle, low power consumption, and memory properties.

[0028] A plasma display is made up of a substrate on which electrodes are formed, and a display panel on which electrodes and minute grooves are formed. The substrate is placed opposite to a substrate having a groove formed therein and a phosphor layer formed therein at a narrow interval, and a rare gas is sealed in the substrate. Alternatively, the plasma display has a structure in which the plasma tube is covered with filters from above and below. It is also possible to sandwich the plasma between two glass-like electrodes. The tube contains discharge gas, RGB phosphors, etc. By applying a voltage between the electrodes, ultraviolet light is generated, causing the phosphor to glow and display information. Plasma displays can be DC type PDPs or AC type PDPs. Here, the plasma display panel may be an ASW (Address Wh ile Sustain) drive, subframe reset period, address period, sustain period ADS (Address Display Separated) drive, CL EAR(HIGH-CONTRAST&LOW ENERGY ADDRESS&RED UCTION OF FALSE CONTOUR SEQUENCE) drive, ALIS (Alternate Lighting of Surfaces) method, TERES (Techbology of Reciprocal Susfainer) Drive, etc. However, the present invention is not limited to this, and various plasma displays can be used. can be used.

[0029] In addition, display devices that require a light source, such as liquid crystal displays (transmissive liquid crystal displays), , Transflective LCD, Reflective LCD, Direct-view LCD, Projection LCDs, display devices using grating light valves (GLVs), digital As a light source for a display device using a digital micromirror device (DMD), Using luminescence, cold cathode tubes, hot cathode tubes, LEDs, laser light sources, mercury lamps, etc. However, the light source is not limited to this, and various light sources can be used. .

[0030] Note that various types of transistors can be used as the transistor. There is no limitation on the type of transistor to be used. For example, amorphous silicon, polycrystalline silicon, microcrystalline silicon, Crystalline (also called microcrystalline, nanocrystalline, or semi-amorphous) silicon, etc. It is possible to use thin film transistors (TFTs) having a non-single crystal semiconductor film, such as There are various advantages to using TFTs. For example, it is easier to use than single crystal silicon. Since it can be manufactured at a lower temperature than conventional methods, it is possible to reduce manufacturing costs and increase the size of manufacturing equipment. Since the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Since a large number of display devices can be manufactured, the manufacturing cost can be reduced. Therefore, a substrate with low heat resistance can be used. A transistor on a light-transmitting substrate can be used to manufacture a display element. The light transmission of the transistor can be controlled. A part of the film that composes the transistor can transmit light. This improves the aperture ratio. It is possible to do so.

[0031] In addition, when manufacturing polycrystalline silicon, a catalyst (such as nickel) is used to form the crystals. This will further improve the crystallinity and make it possible to manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit) and the source driver circuit (signal line driver circuit) Signal processing circuits (signal generation circuits, gamma correction circuits, DA conversion circuits, etc.) are integrated on the board. It can be achieved.

[0032] In addition, when manufacturing microcrystalline silicon, a catalyst (such as nickel) is used to form the crystal. This makes it possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In some cases, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switches, etc.) and the gate The gate driver circuit (scanning line driving circuit) can be formed integrally on the substrate. If laser irradiation is not performed for the purpose of crystallization, the unevenness of the silicon crystallinity can be suppressed. Therefore, it is possible to display an image with improved quality.

[0033] However, polycrystalline silicon and microcrystalline silicon are produced without using a catalyst (such as nickel). It is possible.

[0034] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline can improve the overall panel quality. It is preferable to perform the process in a region other than the region of the panel, but it is not limited to this. The crystallinity of the contact may be improved. The crystallinity can be improved by selectively applying a laser beam. For example, the peripheral circuit area, which is an area other than the pixels, can be selectively irradiated. Alternatively, the gate driver circuit, the source driver circuit, and the Alternatively, the laser light may be irradiated only to a region such as a path. (e.g., an analog switch) may be irradiated with laser light. It is possible to improve the crystallization of silicon only in areas where high-speed circuitry is required. Since there is little need for high-speed operation in the pixel area, there is no problem even if the crystallinity is not improved. The pixel circuit can be operated without problems because the area for improving the crystallinity is small. The manufacturing process can be shortened, throughput can be improved, and manufacturing costs can be reduced. The number of manufacturing devices required is small, which reduces manufacturing costs. It is possible to do this.

[0035] Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. As a result, there is little variation in characteristics, size, and shape, and the current supply capacity is high and the size Using these transistors, the circuit It is possible to achieve low power consumption or high circuit integration.

[0036] Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO, Compound semiconductors or oxide semiconductors such as TiO, AlZnSnO (AZTO) Thin-film transistors are also available, which are made by thinning these compound semiconductors or oxide semiconductors. These can lower the manufacturing temperature, for example, to room temperature. As a result, it is possible to manufacture transistors on substrates with low heat resistance, such as Transistors can be formed directly on stick or film substrates. Compound semiconductors or oxide semiconductors are used not only for the channel portion of transistors, but also for For example, these compound semiconductors or oxide semiconductors can be used for other purposes. The conductor can be used as a resistor element, a pixel electrode, or a light-transmitting electrode. These can be deposited or formed simultaneously with the transistors, thereby reducing costs.

[0037] Alternatively, a transistor formed by inkjet or printing method can be used. These allow fabrication at room temperature, in a low vacuum, or on a large substrate. Since it is possible to manufacture without using a mask (reticle), The layout can be easily changed. Furthermore, since there is no need to use resist, The cost of materials is reduced and the number of processes can be reduced. Furthermore, the film is applied only to the necessary parts, so the entire This method is less wasteful and less costly than the method of forming a film on a surface and then etching it. can.

[0038] Alternatively, transistors having organic semiconductors or carbon nanotubes may be used. These features make it possible to form transistors on a flexible substrate. A semiconductor device using such a substrate can be made resistant to shock.

[0039] Furthermore, transistors of various structures can be used. For example, MOS transistors Use of transistors such as junction transistors and bipolar transistors as transistors By using MOS transistors, the size of the transistors can be reduced. Therefore, multiple transistors can be mounted. By using a transistor, a large current can be passed through. This allows the circuit to operate at high speed. It can be made to work.

[0040] In addition, MOS transistors, bipolar transistors, etc. can be mixed and formed on a single substrate. This can achieve low power consumption, compact size, high speed operation, etc. .

[0041] In addition, various other transistors can be used.

[0042] Note that the transistor can be formed using various substrates. The substrate is not limited to the above. For example, the substrate may be a single crystal substrate (e.g., silicon substrate), SOI substrate, glass substrate, quartz substrate, plastic substrate, metal substrate, stainless steel Stainless steel substrate, substrate with stainless steel foil, tungsten substrate, tungsten A substrate with stainless steel foil, a flexible substrate, etc. can be used. An example of a glass substrate Examples of the flexible substrate include barium borosilicate glass and aluminoborosilicate glass. Examples of plates include polyethylene terephthalate (PET) and polyethylene naphthalate. (PEN), polyethersulfone (PES), or acrylic Other examples include laminated films (polypropylene, etc.) Polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, etc.), including fibrous materials Paper, base film (polyester, polyamide, polyimide, inorganic deposition film, paper, etc.) Alternatively, a transistor may be formed on one substrate and then transferred to another substrate. The transistors may be transposed and placed on a different substrate. The substrates used are single crystal substrates, SOI substrates, glass substrates, quartz substrates, and plastic substrates. Board, paper board, cellophane board, stone board, wood board, cloth board (natural fiber (silk, cotton, hemp), Synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate, (including pla, rayon, recycled polyester, etc.), leather substrate, rubber substrate, stainless steel A substrate having a stainless steel foil, a substrate having a stainless steel foil, etc. can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of an animal, such as a human, may be used as the substrate. Alternatively, a transistor may be formed on a substrate, and the substrate may be polished to make it thinner. The substrates that can be polished include single crystal substrates, SOI substrates, glass substrates, quartz substrates, and plastic substrates. Substrates, stainless steel substrates, substrates with stainless steel foil, etc. are used. By using these substrates, it is possible to form transistors with good characteristics and to improve consumption. To form low-power transistors, to manufacture devices that are less likely to break, to make them heat-resistant, to make them lighter, or It is possible to achieve a thinner design.

[0043] Note that the structure of the transistor can take various forms and is not limited to a specific structure. For example, a multi-gate structure having two or more gate electrodes can be applied. In the case of a gate structure, the channel regions are connected in series, so multiple transistors are connected in series. The multi-gate structure reduces the off-current and increases the withstand voltage of the transistor. Alternatively, the multi-gate structure can reduce the saturation region. When operating in the low-temperature range, the drain-source current remains constant even if the drain-source voltage changes. The voltage-current characteristic slope does not change much, and the voltage-current characteristic slope can be made flat. By taking advantage of the flat slope, it is possible to create ideal current source circuits and circuits with very high resistance values. As a result, it is possible to realize an active load with good characteristics, such as a differential circuit or a current mirror circuit. The path can be realized.

[0044] As another example, a structure in which gate electrodes are arranged above and below the channel can be applied. By arranging the gate electrodes above and below the channel, The current value can be increased by increasing the current density. By using a structure in which the MOSFETs are arranged, it becomes easier for a depletion layer to form, and this leads to an improvement in the S value. In addition, by arranging gate electrodes above and below the channel, , a configuration in which a plurality of transistors are connected in parallel.

[0045] A structure in which a gate electrode is disposed above a channel region, and a structure in which a gate electrode is disposed below a channel region Structures in which the channels are arranged, positive staggered structure, reverse staggered structure, channel region divided into multiple regions The structure may be a structure in which the channel regions are connected in parallel, or a structure in which the channel regions are connected in series. In addition, the source electrode and the drain electrode are attached to the channel region (or a part of it). An overlapping structure can also be applied. By using a structure in which the gate electrodes overlap, charges accumulate in part of the channel region. This can prevent the operation from becoming unstable. By providing an LDD region, it is possible to reduce the off-current or improve the breakdown voltage of the transistor. Alternatively, by providing an LDD region, it is possible to reduce saturation. When operating in the sum region, the drain-source current remains constant even if the drain-source voltage is changed. does not change much, and the slope of the voltage-current characteristic can be made flat.

[0046] Note that various types of transistors can be used and can be formed using various substrates. Therefore, all the circuits required to realize a given function can be implemented in the same For example, a circuit required to realize a specific function can be formed on the substrate. All of these are available on a variety of substrates, including glass, plastic, single crystal, and SOI substrates. It is also possible to form the entire circuit necessary to realize a given function using a substrate. Since all components are formed using the same substrate, the number of components is reduced, resulting in lower costs. Alternatively, the reliability can be improved by reducing the number of connection points with the circuit components. A part of the circuitry required to realize a certain function is formed on a certain substrate, and the device performs the specified function. It is possible that other parts of the circuitry required to realize the above-mentioned embodiment are formed on other substrates. In other words, all of the circuits required to realize a given function are formed using the same substrate. For example, some of the circuits required to realize a certain function may be mounted on a glass substrate. Another part of the circuitry required to realize a given function, formed by transistors on a plate The part is formed on a single crystal substrate and is composed of transistors formed using the single crystal substrate. The IC chip is connected to the glass substrate by COG (Chip On Glass) and the glass substrate is It is also possible to place the IC chip on the board. Alternatively, the IC chip can be attached to the TAB (Tape Automated Bonding) and printed circuit boards are used to bond glass substrates In this way, it is possible to connect the two circuits together. This allows for cost reduction by reducing the number of components, and signal quality improvement by reducing the number of connections to circuit components. Alternatively, it is possible to improve the reliability of the parts with high drive voltages and parts with high drive frequencies. Since the power consumption of the circuitry for the other parts is large, the circuits for those parts are formed on the same board. Instead, for example, a circuit for that part is formed on a single crystal substrate, and the By using an IC chip fabricated in this way, it is possible to prevent an increase in power consumption.

[0047] Note that one pixel refers to one element whose brightness can be controlled. In this case, one pixel refers to one color element, and the brightness is expressed by one color element. Therefore, in the case of a color display device consisting of the color elements R (red), G (green), and B (blue), In this case, the smallest unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel. The color elements are not limited to three colors, and more than three colors may be used. Colors may also be used. For example, white may be added to make it RGBW (W is white). Or, for example, yellow, cyan, magenta, emerald green, vermilion, etc., in RGB. It is also possible to add one or more colors, such as RGB. It is possible to add colors similar to a color to RGB. For example, R, G, B1, B2. B1 and B2 are both blue, but they have slightly different wavelengths. , R1, R2, G, B. By using such color elements, By using such color elements, the power consumption can be reduced. Another example is using multiple regions for one color element. When controlling the brightness by using the area, it is possible to treat one area as one pixel. For example, when performing area gradation or when using sub-pixels, one color For each element, there are multiple areas that control the brightness, and the overall gradation is expressed, but the brightness It is also possible to use one pixel for one controlled area. An element is made up of multiple pixels. Or, the brightness control area is a single Even if there are multiple color elements, they may be grouped together and each color element may be considered as one pixel. In this case, one color element is composed of one pixel. When controlling the brightness of one color element using multiple regions, the display may differ depending on the pixel. The contributing areas may be of different sizes, or there may be multiple per color component. In the brightness control area, the signal supplied to each is slightly different. In other words, for one color element, multiple regions may be arranged so that the viewing angle is increased. The potentials of the pixel electrodes may be different from each other. The voltage applied to each pixel electrode is different. This makes it possible to widen the viewing angle. .

[0048] When explicitly stating one pixel (three colors), R, G, and B pixels are considered to be one pixel. When it is explicitly stated as one pixel (one color), it refers to one color element. In this case, when there are multiple regions, they are considered as one pixel.

[0049] In some cases, pixels are arranged (distributed) in a matrix. The pixels are arranged in a straight line in the vertical or horizontal direction. This includes cases where they are arranged side by side or in a jagged line. For example, when performing full-color display using three color elements (e.g., RGB), This also includes cases where the dots of the three color elements are arranged in a delta arrangement. This also includes the Bayer arrangement. Note that the size of the display area for each dot of the color element is This can reduce power consumption or extend the life of the display element. can.

[0050] In addition, the active matrix type in which the pixels have active elements or the A passive matrix method can be used.

[0051] In the active matrix method, a transistor is used as an active element (active element, nonlinear element). Use not only transistors but also various active elements (active elements, nonlinear elements) For example, MIM (Metal Insulator Metal) and TFD ( It is also possible to use thin film diodes. Since the manufacturing process is few, it is possible to reduce manufacturing costs and improve yields. In addition, the small size of the element allows for an improved aperture ratio, resulting in lower power consumption and higher brightness. It is possible to achieve this.

[0052] In addition to the active matrix type, there are also active elements (active elements, nonlinear It is also possible to use a passive matrix type that does not use active elements. Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and increases yields. It is possible to improve the accuracy. Since no active elements (non-linear elements) are used, Therefore, the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

[0053] A transistor is defined as an element having at least three terminals including a gate, a drain, and a source. The element has a channel region between a drain region and a source region, A current can be passed through the in-region, the channel region, and the source region. Which is the source and which is the drain depends on the transistor structure and operating conditions. Therefore, it is difficult to determine whether the source and drain are In some cases, the regions that function as a source or drain are not called source or drain. In some cases, they are referred to as the first terminal and the second terminal. It may be written as the first electrode and the second electrode. Or, it may be written as the first region and the second region. There is.

[0054] A transistor has at least three terminals including a base, an emitter, and a collector. In this case, the emitter and the collector are connected to the first terminal and the second terminal. It may be written as a terminal.

[0055] The gate is a gate electrode and a gate wiring (gate line, gate signal line, scanning line, scanning signal line, etc.). The term refers to the whole or a part of the gate electrode and The gate insulating film is a part that overlaps the semiconductor that forms the channel region. The gate electrode is partially doped with LDD (Lightly Doped Diode). ed Drain) region or source region (or drain region) and The gate wiring is the gate electrode of each transistor. a wiring for connecting between the gate electrodes of each pixel, or This refers to a wiring for connecting a gate electrode to another wiring.

[0056] However, there are some areas (regions, conductors) that function as both gate electrodes and gate wiring. Such parts (regions, conductive films, wiring, etc.) are gate electrodes. In other words, the gate electrode and the gate wiring are However, there are also regions that are not clearly distinguishable. For example, If a part of the line overlaps with the channel region, that part (region, conductive film, wiring ) function as gate wiring, but also as a gate electrode. Therefore, such a part (region, conductive film, wiring, etc.) may be called a gate electrode. , which may be called a gate wiring.

[0057] In addition, it is made of the same material as the gate electrode and forms the same island as the gate electrode. The connected portion (region, conductive film, wiring, etc.) may also be called a gate electrode. The gate wiring is made of the same material as the gate wiring and is connected to the same island as the gate wiring. The part (region, conductive film, wiring, etc.) that is connected to the gate may also be called the gate wiring. In the strict sense, the part (region, conductive film, wiring, etc.) does not overlap with the channel region. In some cases, the gate electrode does not have a function to connect to another gate electrode. Due to manufacturing specifications, the gate electrode or gate wiring is made of the same material. The area (region, Therefore, such parts (areas, conductive films, wiring, etc.) are also included in the gate. They may also be called gate electrodes or gate wirings.

[0058] For example, in a multi-gate transistor, one gate electrode and another gate In many cases, the electrode is connected to the gate electrode through a conductive film made of the same material. The necessary parts (regions, conductive films, wiring, etc.) are parts for connecting gate electrodes. Since it is a single gate wiring, it can be called a gate wiring, but multi-gate Since the transistors can be regarded as one transistor, they can be called gate electrodes. In other words, it is formed of the same material as the gate electrode or gate wiring, and The part (area, conductive film, wiring, etc.) that forms the same island as the main wiring and is connected The gate electrodes and gate wirings may be called gate electrodes or gate wirings. A conductive film that is connected to wiring and is different from the gate electrode or gate wiring. The conductive film formed from the material may also be called a gate electrode or a gate wiring.

[0059] The gate terminal is a part of the gate electrode (such as a region, conductive film, or wiring) or Regarding the part that is electrically connected to the electrode (area, conductive film, wiring, etc.), He says.

[0060] Note that a certain wiring may be called a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, etc. In some cases, the gate of the transistor is not connected to the wiring. The gate wiring, gate line, gate signal line, scanning line, and scanning signal line are the same as the gate of the transistor. wiring made of the same material as the transistor gate or wiring made of the same material as the transistor gate In some cases, the term "interconnect" refers to the wiring that is deposited at the same time as the gate of a transistor. These include measurement wiring, power supply wiring, and reference potential supply wiring.

[0061] The source includes the source region, the source electrode, and the source wiring (source line, source signal line, de- This refers to the whole or a part of the data line, including the data signal line, etc. The source region is formed by doping P-type impurities (such as boron or gallium) or N-type impurities (such as phosphorus or arsenic). Therefore, it is a semiconductor region that contains a large amount of P-type impurities and N-type impurities. The region containing The source electrode is formed of a material different from the source region and is not included in the source region. The term "conductive layer" refers to the portion of the conductive layer that is electrically connected to the source region. The source electrode is sometimes called the source electrode including the source region. Wiring for connecting the source electrodes of the transistors, wiring for connecting the source electrodes of each pixel This refers to a wiring for connecting a source electrode to another wiring, or a wiring for connecting a source electrode to another wiring.

[0062] However, there is a portion (area) that functions as both a source electrode and a source wiring. Such parts (areas, conductive films, wiring, etc.) are In other words, the source electrode and the source wiring are There are also areas where the lines are not clearly distinguishable. When a part of the source wiring overlaps with the source region, that part (region, conductive film , wiring, etc.) function as source wiring, but also function as source electrodes. Therefore, such a part (region, conductive film, wiring, etc.) can be called a source electrode. That's fine, you can call it source wiring.

[0063] In addition, it is made of the same material as the source electrode and forms the same island as the source electrode. Connected parts (areas, conductive films, wiring, etc.) and connecting source electrodes The part (region, conductive film, wiring, etc.) that is connected to the source electrode may also be called the source electrode. The overlapping portion may also be called the source electrode. There are also regions that are made of the same material and form the same islands as the source wiring and are connected to it. Such a portion (region, conductive film, wiring, etc.) may be called a source wiring. In some cases, the device may not have the ability to connect to a separate source electrode. Due to specifications, the source electrode or source wiring is made of the same material. There are parts (regions, conductive films, wiring, etc.) that are connected to the source wiring. Such a portion (region, conductive film, wiring, etc.) may also be called a source electrode or source wiring.

[0064] For example, the conductive film in the portion connecting the source electrode and the source wiring is A conductive film formed of a material different from the source electrode or source wiring may also be called a source electrode. Alternatively, it may be called the source wiring.

[0065] The source terminal may be a region of the source region, a source electrode, or a region electrically connected to the source electrode. It refers to a part of a structure (such as an area, conductive film, or wiring).

[0066] A certain wiring may be referred to as a source wiring, a source line, a source signal line, a data line, a data signal line, etc. When a transistor is called a "transistor," the source (drain) of the transistor may not be connected to the wiring. In this case, the source wiring, the source line, the source signal line, the data line, and the data signal line are The wiring formed in the same layer as the source (drain) of the transistor, The wiring is made of the same material as the transistor source (drain) or is formed at the same time as the transistor source (drain). Examples include storage capacitor wiring, power supply lines, and reference voltage lines. Power supply wiring, etc.

[0067] The drain is similar to the source.

[0068] The semiconductor device includes semiconductor elements (transistors, diodes, thyristors, etc.). It also refers to the whole device that can function by utilizing the properties of semiconductors. Generally, a semiconductor device may be called a semiconductor device. Alternatively, a device that has semiconductor material may be called a semiconductor device. say.

[0069] Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including the above-mentioned. The peripheral driving circuit for driving the plurality of pixels may include a driving circuit. The display device may be formed on the same substrate as the element. The peripheral driving circuits arranged on the board by the so-called chip-on-glass (COG) It may include an IC chip connected to the board or an IC chip connected by TAB or the like. The display device is made up of IC chips, resistors, capacitors, inductors, transistors, etc. The flexible printed circuit (FPC) may include a flexible printed circuit (FPC) to which the The display device is connected via a flexible printed circuit (FPC) or the like, and the IC chip Printed wiring with resistors, capacitors, inductors, transistors, etc. The display device may include a polarizing plate or a retardation plate. The display device may include a lighting device, a housing, an audio input / output device, a light, and It may also include a sensor.

[0070] The lighting device includes a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflector, It has a sheet, a light source (LED, cold cathode fluorescent lamp, etc.), a cooling device (water-cooled, air-cooled), etc. is also good.

[0071] The light-emitting device refers to a device having a light-emitting element or the like. When the light emitting device has an element, the light emitting device is a specific example of a display device.

[0072] The reflecting device is a device that has a light reflecting element, a light diffractive element, a light reflecting electrode, etc. This refers to.

[0073] The liquid crystal display device refers to a display device having a liquid crystal element. There are visual, projection, transmissive, reflective, and semi-transmissive types.

[0074] The driving device refers to a device having semiconductor elements, electric circuits, and electronic circuits. For example, a transistor that controls the input of a signal from a source signal line to a pixel (a selection transistor) (sometimes called a phototransistor, switching transistor, etc.) The transistors that supply voltage or current to the light-emitting element are driven by Furthermore, a circuit for supplying a signal to the gate signal line (a gate driver, A circuit that supplies signals to the source signal lines (sometimes called a source driver circuit, etc.) A pixel driver (sometimes called a pixel driver or a source line driver circuit) is an example of a driver device.

[0075] In addition, display devices, semiconductor devices, lighting devices, cooling devices, light-emitting devices, reflecting devices, driving devices, etc. For example, a display device may include a semiconductor device and a light emitting device. Alternatively, the semiconductor device may have a display device and a driver. There may be cases where this is the case.

[0076] In addition, it is not necessary to explicitly say that B is formed on A, or that B is formed on A. In the case of describing, it is not limited to forming B directly on A. This also includes cases where A and B are not connected in a physical sense, that is, cases where another object is present between A and B. Here, A and B are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0077] Therefore, for example, it is not necessary to explicitly state that layer B is formed on layer A (or on layer A). In the case of a laminated structure, layer B may be formed directly on layer A, or layer A may be formed directly on layer B. Another layer (such as layer C or layer D) is formed adjacent to it, and layer B is formed directly on top of it. In addition, other layers (such as layers C and D) may be formed separately. It may be a layer or multiple layers.

[0078] Furthermore, the same applies when it is explicitly stated that B is formed above A. This is not limited to B being directly on A, but includes the case where there is another object between A and B. For example, if a layer B is formed above a layer A, In this case, layer B is formed directly on layer A, and layer B is formed directly on layer A. Another layer (such as layer C or layer D) is formed, and layer B is formed directly on top of it. The case where the other layers (e.g., layers C and D) are single layers is also included. Alternatively, it may be multi-layered.

[0079] In addition, B is formed on A, B is formed on A, or B is formed above A. When explicitly stating that B is formed, this also includes the case where B is formed diagonally above. .

[0080] The same applies to the case where B is below A, or B is below A.

[0081] In addition, where something is explicitly stated as singular, it is preferable to use the singular. However, this is not limited to this, and plurals are also possible. It is preferable that the items described are plural. However, this is not limited to this. , it is also possible that it is singular.

[0082] In the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0083] Note that the diagram is a schematic representation of an ideal example, and is not limited to the shapes or values ​​shown in the diagram. For example, there are variations in shape due to manufacturing techniques, variations in shape due to errors, and noise. Variations in signals, voltages, or currents due to timing differences, or variations in signals, voltages, Or, it is possible to include current variation.

[0084] In addition, technical terms may be used for the purpose of describing a specific embodiment or example. Many, but not limited to:

[0085] In addition, undefined terms (including scientific and technical terms such as technical terms or academic terms) are generally It is possible to use the term as meaning equivalent to the general meaning understood by a person skilled in the art. Any words defined herein shall be construed in a manner consistent with the background of the relevant art. is preferred.

[0086] In addition, the terms first, second, third, etc., refer to various elements, members, regions, layers, or sections from one another. Therefore, the words first, second, third, etc. are used to distinguish between elements, parts, etc. The number of materials, regions, layers, areas, etc. is not limited. It is possible to replace "second" or "third" etc.

[0087] In addition, "up," "upward," "down," "downward," "sideways," "right," "left," Spatial location terms such as "diagonally," "in the back," or "in front" refer to an element or may be used to simply illustrate the relationship of a feature to other elements or features in a diagrammatic manner. However, this is not limited to the above, and the terms that indicate these spatial arrangements are added to the direction depicted in the figure. In addition, other orientations are possible. For example, if B is explicitly stated as above A, The device in the figure is not limited to B being above A. Since it is possible for B to be under A, it is possible for B to be under A. The phrase "on" can include an orientation of "under" in addition to an orientation of "on." However, the device in the figure can be rotated in various directions, so The word "above" refers to the directions "above" and "below," as well as "sideways," "right," and "left." The orientation may include other orientations such as "towards," "diagonally," "behind," or "forward." . Effect of the Invention

[0088] In the disclosed invention, a light-transmitting transistor or a light-transmitting capacitor is formed. Therefore, even when a transistor or a capacitor is disposed in a pixel, Since light can pass through the area where the transistor and the capacitor are formed, Therefore, the aperture ratio can be improved. A wiring that connects a capacitor to another capacitor, or a wiring that connects a capacitor to another capacitor The wiring can be made of materials with low resistivity and high conductivity, so the signal This reduces waveform distortion and voltage drop due to wiring resistance. [Brief description of the drawings]

[0089] [Figure 1]FIG. 1 is a top view illustrating a semiconductor device. [Diagram 2] 1 is a cross-sectional view illustrating a semiconductor device. [Diagram 3] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 4] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Diagram 5] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 6] FIG. 4 is a diagram for explaining a multi-tone mask. [Figure 7] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 8] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 9] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 10] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 11] FIG. 1 is a top view illustrating a semiconductor device. [Figure 12] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 13] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 14] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 15] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 16] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 17] FIG. 1 is a top view illustrating a semiconductor device. [Figure 18] FIG. 1 is a top view illustrating a semiconductor device. [Figure 19] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 20] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 21] FIG. 1 is a top view illustrating a semiconductor device. [Figure 22] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 23] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 24] 1A to 1C are diagrams illustrating a semiconductor device. [Diagram 25]1A to 1C are diagrams illustrating a semiconductor device. [Figure 26] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 27] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 28] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 29] 1A to 1C are diagrams illustrating a semiconductor device. [Diagram 30] 1A to 1C are diagrams illustrating electronic devices. [Diagram 31] 1A to 1C are diagrams illustrating electronic devices. [Diagram 32] 1A to 1C are diagrams illustrating electronic devices. [Diagram 33] 1A to 1C are diagrams illustrating electronic devices. [Diagram 34] 1A to 1C are diagrams illustrating electronic devices. [Diagram 35] 1 is a cross-sectional view illustrating a semiconductor device. [Diagram 36] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 37] FIG. 1 is a top view illustrating a semiconductor device. [Figure 38] FIG. 1 is a top view illustrating a semiconductor device. [Figure 39] FIG. 1 is a top view illustrating a semiconductor device. [Diagram 40] FIG. 1 is a top view illustrating a semiconductor device. [Diagram 41] 1A to 1C are diagrams illustrating a semiconductor device. [Diagram 42] 1A to 1C are diagrams illustrating a semiconductor device. [Diagram 43] 1A to 1C are diagrams illustrating a semiconductor device. [Diagram 44] 1A to 1C are diagrams illustrating a semiconductor device. [Diagram 45] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 46] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 47] 1A to 1C are diagrams illustrating a semiconductor device. [Figure 48] 1A to 1C are diagrams illustrating a semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0090] The embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the described embodiment, and various changes in form and details are possible without departing from the spirit of the invention. It is obvious to those skilled in the art that the above-mentioned can be achieved. The same reference numerals are used for parts or parts having similar functions, and repeated explanations are omitted. do.

[0091] In addition, the contents (or even a part of the contents) described in one embodiment may be used in the embodiment. Another content (or a part of the content) described in the embodiment, and / or one or more other embodiments The application, combination, or replacement of the contents (or part of the contents) described in the form It is possible to do the following:

[0092] The contents described in the embodiments are explained in detail with reference to various figures in each embodiment. This refers to the content that is stated or stated using the text in the specification.

[0093] In addition, a figure (or a part thereof) described in one embodiment may be different from another part of the figure, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part of it) described in another embodiment of the present invention , and many more diagrams can be constructed.

[0094] In addition, in a drawing or text described in a certain embodiment, a part of it may be taken out. It is possible to constitute an embodiment of the invention by using the above-mentioned parts. If the invention contains text, the contents of a part of the figure or text may also be considered as part of the invention. It is disclosed as an embodiment and may constitute an embodiment of the invention. For example, active elements (transistors, diodes, etc.), wiring, passive elements (capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, parts, Substrate, module, device, solid, liquid, gas, method of operation, method of manufacture, etc. The drawings (cross-sectional view, plan view, circuit diagram, block diagram, flow chart, process chart, perspective view) , elevation, layout, timing chart, structural diagram, schematic diagram, graph, table, optical path diagram, vector A part of a graph, phase diagram, waveform diagram, photograph, chemical formula, etc., or text It is possible to constitute one aspect of the invention.

[0095] (Embodiment 1) In this embodiment mode, a semiconductor device and a manufacturing method thereof will be described with reference to the drawings.

[0096] 1 and 2 show a configuration example of a semiconductor device described in this embodiment mode. Note that FIG. 1 is a top view. FIG. 2(A) corresponds to the cross section between A and B in FIG. 1, and FIG. 2(B) corresponds to the cross section between C- It corresponds to the cross section between D.

[0097] The semiconductor device shown in FIG. 1 includes a pixel portion provided with a transistor 152 and a storage capacitor portion 154. 150, wiring 122, wiring 124, and wiring 126. The pixel portion 150 refers to a region surrounded by the plurality of wirings 122 and the plurality of wirings 126 .

[0098] The wiring 122 can function as a gate wiring. The wiring 126 can function as a source wiring. However, the present invention is not limited to these.

[0099] The transistor 152 includes an electrode 132 provided on the substrate 100 and a gate insulating film 133 provided on the electrode 132. The insulating layer 106 is provided with an insulating film 107, an electrode 136 and an electrode 138 are provided on the insulating layer 106, and the insulating layer 106 so as to overlap the electrode 132 and is provided on the electrodes 136 and 138. The semiconductor layer 112a is formed by bonding the insulating layer 112a to the insulating layer 112b (see FIG. 2A).

[0100] The electrode 132 can function as a gate electrode. The electrode 136 or the electrode 138 can function as a source electrode or a second insulating layer. The semiconductor layer 112a can function as a drain electrode. However, the present invention is not limited to these.

[0101] The electrode 132 is formed using a conductive layer 102 a having a light-transmitting property and is electrically connected to the wiring 122. The wiring 122 is configured with a laminated structure of a conductive layer 102a and a conductive layer 104a. In addition, the conductive layer 102a constituting the electrode 132 and the conductive layer 102b constituting the wiring 122 are The electrode layer 102a is formed on the same island. By providing the island-shaped conductive layer 102a, the electrical connection between the electrode 132 and the wiring 122 can be improved. In addition, the electrode 132 and the wiring 122 are formed on the same island-shaped conductive layer 102a. By providing the masks in the manufacturing process, the number of masks can be reduced, leading to cost reduction. A base insulating layer may be provided between the substrate 100 and the electrode 132.

[0102] The conductive layer 102a is made of indium tin oxide (ITO). The conductive layer 104a can be formed using a light-transmitting material such as a conductive layer 102. It is sufficient to use a material with a lower resistivity than a, for example, aluminum (Al) or tungsten. (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), Platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (N d), niobium (Nb), cerium (Ce), chromium (Cr), or other metallic materials, The alloy material mainly composed of these metal materials, or the nitride composed of these metal materials, is used. These metal materials can be formed as a single layer or a multilayer. Generally, these metal materials have light-shielding properties. Therefore, in the structure shown in FIG. 1, the portion where the electrode 132 is formed is transparent, and the wiring 1 The portion where the electrode 22 is formed exhibits light blocking properties compared to the portion where the electrode 132 is formed. .

[0103] In the above, the term "having a light-transmitting property" means that at least the conductive layer 104a and the conductive layer 110a This means that it has a higher light transmittance in the visible range (approximately 400nm to 800nm) compared to Taste.

[0104] In addition, the conductive layer 104a is preferably formed to be thicker than the conductive layer 102a. When the conductive layer 102a is formed thick, the wiring resistance can be reduced. When the film is formed thin, the light transmittance can be improved. However, this is not limited to this. do not have.

[0105] 1 and 2, the wiring 122 is formed by stacking a conductive layer 104a over a conductive layer 102a. However, the conductive layer 102a may be stacked over the conductive layer 104a.

[0106] The electrode 136 is provided using a conductive layer 108a having a light-transmitting property and is electrically connected to the wiring 126. The wiring 126 is configured with a laminated structure of a conductive layer 108a and a conductive layer 110a. In addition, the conductive layer 108a constituting the electrode 136 and the conductive layer 108b constituting the wiring 126 are The electrode 136 and the wiring 126 are formed on the same island. By providing the island-shaped conductive layer 108a, the electrical connection between the electrode 136 and the wiring 126 is can be performed effectively.

[0107] The electrode 138 is formed using a light-transmitting conductive layer 108b. The poles 138 may be formed using the same material.

[0108] The conductive layers 108a and 108b are formed using a light-transmitting material such as indium tin oxide. The conductive layer 110a may be made of a material having a lower resistivity than the conductive layer 108a. For example, aluminum (Al), tungsten (W), titanium (Ti), tantalum ( Ta), Molybdenum (Mo), Nickel (Ni), Platinum (Pt), Copper (Cu), Gold (Au ), silver (Ag), manganese (Mn), neodymium (Nd), niobium (Nb), cerium (C e) Metallic materials such as chromium (Cr), or alloy materials whose main components are these metallic materials or a nitride containing these metal materials as a component, and may be formed in a single layer or a multilayer structure. Generally, metal materials have a light-shielding property, so in the structure shown in FIG. The portion where the wiring 126 is formed is transparent, and the portion where the electrode 136 is formed is transparent. This means that the light-blocking properties are exhibited in comparison with the other areas.

[0109] It is also preferable that the conductive layer 110a is formed thicker than the conductive layers 108a and 108b. When the conductive layer 110a is formed thick, the wiring resistance can be reduced. When 108a and 108b are formed thin, the transmittance can be improved. , but is not limited to this.

[0110] The wiring 124 is preferably formed using the light-transmitting conductive layer 102b. As shown in FIGS. 1 and 2, the area where the wiring 124 and the wiring 126 overlap (and the area nearby) In the present embodiment, a laminated structure of a conductive layer 102b and a conductive layer 104b having a lower resistance than the conductive layer 102b is used. By forming the wiring 124 as shown in FIG. The aperture ratio of the element portion 150 is improved, and the wiring resistance of the wiring 124 is reduced, resulting in low power consumption. Of course, the wiring 124 may be formed of only the conductive layer 102b having a light-transmitting property. Alternatively, only the conductive layer 104b may be provided.

[0111] The storage capacitor 154 has the insulating layer 106 as a dielectric, a light-transmitting conductive layer 102b, and a light-transmitting The conductive layer 108c having a conductive property is configured as an electrode. The conductive layer 108c is electrically connected to the conductive layer 116. The conductive layer 108c is electrically connected to the conductive layer 116. This can be done through a contact hole formed in the insulating layer 114 which functions as an interlayer film. Note that the conductive layer 116 can function as a pixel electrode.

[0112] In addition, the storage capacitor 154 is formed by using the insulating layer 106 and the insulating layer 114 as dielectrics and the conductive layer 1 Alternatively, the insulating layer 112 and the conductive layer 116 may be used as electrodes (see FIG. 35A). In FIG. 35(A), the insulating layer 114 is made of an inorganic material (such as silicon nitride). A storage capacitor is formed by stacking an insulating layer 114a and an insulating layer 114b made of an organic material in this order. In the storage capacitor 154, the insulating layer 114b made of an organic material is removed, and the storage capacitor 154 is formed as follows: The insulating layer 106 and the insulating layer 114a are dielectrics, and the conductive layer 102b and the conductive layer 116 are electrodes. It may be configured to be used as such (see FIG. 35(B)).

[0113] As shown in FIG. 1 and FIG. 2, the storage capacitor 154 is provided using a light-transmitting material. This allows light to pass through the area where the storage capacitor 154 is formed. Therefore, the aperture ratio of the pixel section 150 can be improved.

[0114] In addition, by forming the electrode for the storage capacitor 154 from a conductive layer having light transmission properties, Therefore, the storage capacitor 154 can be enlarged without decreasing the aperture ratio. By making the conductive layer 4 large, even when the transistor 152 is turned off, The potential retention characteristic of the feedthrough 116 is improved, and the display quality is improved. By reducing the field-through potential, the positive This allows for accurate voltage application, reducing flickering and improving noise resistance. By increasing the number of inputs, crosstalk can be reduced.

[0115] The conductive layer 116 is electrically connected to the electrode 138 and the conductive layer 108c.

[0116] As described above, the electrode 132, the semiconductor layer 112a, the electrode 136, the electrode 138, and the storage capacitor 1 The region 54 in which the transistor 152 is formed is formed of a light-transmitting material. Since light can be transmitted through the region where the storage capacitor 154 is formed and the region where the storage capacitor 154 is formed, The aperture ratio of the element portion 150 can be improved. By providing a part of 24 with a conductive layer made of a metal material with low resistivity, the wiring resistance can be reduced. As a result, waveform distortion can be reduced. can be reduced.

[0117] Usually, the gate wiring and gate electrode, and the source wiring and source electrode are formed on the same island. Therefore, the gate electrode, the source electrode, and the drain electrode are made of a light-transmitting material. In the case where the light-transmitting layer is provided, wirings such as a gate wiring and a source wiring are also formed of a material having light-transmitting properties. However, materials that are transparent, such as indium tin oxide, indium Indium zinc oxide, indium tin zinc oxide, etc. are materials having light blocking and reflecting properties, for example , aluminum, molybdenum, titanium, tungsten, neodymium, copper, silver and other metal materials. Since the conductivity is relatively low, it is difficult to sufficiently reduce the wiring resistance. When manufacturing such a display device, the wiring becomes long, and the wiring resistance tends to become very high. As described above, the electrode 132, the semiconductor layer 112a, the electrode 136, the electrode 138, the holding The capacitor portion 154 is formed of a light-transmitting material, and the wirings 122, 126, and 124 are By providing a conductive layer made of a metal material with low resistivity in part, such a problem can be solved. can be solved.

[0118] In addition, the conductive layer 104a constituting the gate wiring and the conductive layer 110a constituting the source wiring are By forming the wiring using a metal material having light-shielding properties, the wiring resistance can be reduced and adjacent In other words, the gates arranged in the row direction can block light from entering the areas between the adjacent pixel sections. The line and the source line arranged in the column direction allow the display to be displayed without using a black matrix. Of course, it is possible to provide a black matrix separately to block the areas between pixels. In this case, light may be blocked more effectively.

[0119] In addition, in the structure shown in FIG. 1 and FIG. 2, the storage capacitor 154 may be omitted. In this case, the wiring 124 is also unnecessary.

[0120] Next, an example of a method for manufacturing the semiconductor device shown in FIGS. 1 and 2 will be described with reference to FIGS. and explain.

[0121] First, a conductive film 102 is formed on a substrate 100 (see FIG. 3A). A base insulating film may be formed between the layers 102.

[0122] The substrate 100 may be, for example, a glass substrate. The substrates are insulating substrates made of insulators such as ceramic substrates, quartz substrates, and sapphire substrates, silicon substrates, etc. The surface of a semiconductor substrate made of semiconductor material such as silicon is covered with an insulating material, The surface of a conductive substrate made of a conductor such as fluorine or the like and coated with an insulating material can be used. In addition, a plastic substrate can be used if it can withstand the heat treatment in the manufacturing process. .

[0123] The conductive film 102 can be formed using a light-transmitting material. Examples of the material include indium tin oxide (InTinOxide). ITO), indium tin oxide with silicon oxide (ITSO), organo-indium, organo-tin Indium zinc oxide (ZnO) and the like can be used. Indium Zinc Oxide (IZO), zinc oxide with gallium (Ga) Doped, tin oxide (SnO 2 ), indium oxide with tungsten oxide, acid Indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium may also be used. In this way, the film can be formed in a single layer structure or a laminated structure. Therefore, it is desirable to have a sufficiently high light transmittance in the laminate structure.

[0124] Next, a resist mask 161 is formed over the conductive film 102. The conductive film 102 is etched using the above-mentioned etching method to form an island-shaped conductive layer 102a and a conductive layer 102b. b is formed (see FIG. 3(B)).

[0125] The conductive layer 102a functions as a part of the wiring 122 and the electrode 132. 2b functions as a part of the wiring 124.

[0126] Next, a conductive film 104 is formed on the substrate 100, the conductive layer 102a, and the conductive layer 102b (FIG. (See 3(C)).

[0127] The conductive film 104 may be made of aluminum (Al), tungsten (W), titanium (Ti), Tantalum (Ta), Molybdenum (Mo), Nickel (Ni), Platinum (Pt), Copper (Cu) , Gold (Au), Silver (Ag), Manganese (Mn), Neodymium (Nd), Niobium (Nb), Ce Metallic materials such as cerium (Ce), chromium (Cr), etc., or materials that contain these metallic materials as their main components. The material is an alloy or a nitride made of these metals, and is formed in a single layer or multilayer. In particular, it is preferable to form the insulating layer from a low-resistance conductive material such as aluminum. stomach.

[0128] When the conductive film 104 is formed on the conductive layers 102a and 102b, the two films react with each other. For example, when ITO is used as the conductive layers 102a and 102b, the conductive film 10 If aluminum is used as 4, a chemical reaction may occur. In order to prevent chemical reactions from occurring, It is desirable to use a high melting point material for the above-mentioned. For example, molybdenum is an example of a high melting point material. Examples of materials that can be used include titanium, tungsten, tantalum, and chromium. It is preferable to form the conductive film 104 as a multi-layer film by using a material with high conductivity on the previously formed film. Materials with high electrical conductivity include aluminum, copper, and silver. When the film 104 is formed in a laminated structure, the first layer is made of molybdenum, the second layer is made of aluminum, The third layer is a layer of molybdenum, or the first layer is molybdenum and the second layer is a small amount of neodymium. The first layer is made of aluminum, and the second layer is made of molybdenum. By so doing, hillocks can be prevented.

[0129] Next, a resist mask 162 is formed over the conductive film 104. The conductive film 104 is etched using the above-mentioned etching method to form an island-shaped conductive layer 104a and a conductive layer 104 b is formed (see FIG. 3(D)).

[0130] At this time, the conductive film 104 formed on the conductive layer 102a functioning as the electrode 132 and the wiring In step 124, the conductive film 104 provided in the region to be disposed in the pixel portion is removed.

[0131] The conductive layer 104a functions as a part of the wiring 122. The conductive layer 104b functions as a part of the wiring 122. Functions as part of 24.

[0132] In FIG. 3D, the width of the conductive layer 104a is set smaller than the width of the conductive layer 102a. In the case where the width of the conductive layer 104b is formed to be smaller than the width of the conductive layer 102b, The width of the conductive layer 104a is set to be larger than the width of the conductive layer 102a. The conductive layer 104a may be formed so as to cover the conductive layer 102a, or the conductive layer 104b may be formed so as to cover the conductive layer 102a. The width of the conductive layer 104b is made larger than the width of the conductive layer 102b, and the conductive layer 104b is formed so as to cover the conductive layer 102b. may be formed.

[0133] Next, the insulating layer 106 is formed so as to cover the conductive layers 102a, 102b and the conductive layers 104a, 104b. Then, a conductive film 108 is formed over the insulating layer 106 (see FIG. 3E).

[0134] The insulating layer 106 may be a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a nitride oxide film. Silicon oxide film, aluminum oxide film, aluminum nitride film, aluminum oxynitride film, nitride The insulating film may be a single layer or a multilayer of an aluminum oxide film or a tantalum oxide film. The edge layer 106 is formed to a thickness of 50 nm to 250 nm using a sputtering method or the like. For example, the insulating layer 106 can be formed by sputtering or CVD using a silicon oxide film. Alternatively, aluminum oxide can be formed by sputtering to a thickness of 100 nm. The silicon film can be formed to a thickness of 100 nm.

[0135] The conductive film 108 can be formed using a light-transmitting material. Examples of the material include indium tin oxide (InTinOxide). ITO), indium tin oxide with silicon oxide (ITSO), organo-indium, organo-tin Indium zinc oxide (ZnO) and the like can be used. Indium Zinc Oxide (IZO), zinc oxide with gallium (Ga) Doped, tin oxide (SnO 2 ), indium oxide with tungsten oxide, acid Indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium may also be used. In this way, the film can be formed in a single layer structure or a laminated structure. It is desirable to make the light transmittance of all of the multiple films sufficiently high.

[0136] Next, a resist mask 163 is formed over the conductive film 108. The conductive film 108 is etched to form island-shaped conductive layers 108a and 108b. Then, a conductive layer 108c is formed (see FIG. 4A).

[0137] The conductive layer 108a functions as a part of the wiring 126 and the electrode 136. The conductive layer 108b functions as an electrode 138. The conductive layer 108c is a first electrode of the storage capacitor 154. It functions as an electrode.

[0138] In addition, it is preferable to form the end of the conductive layer 108b in a tapered shape. This is because it is possible to prevent the semiconductor layer formed on b from being disconnected.

[0139] Next, a conductive film 110 is formed so as to cover the conductive layers 108a to 108c (see FIG. 4(B)). ).

[0140] The conductive film 110 may be made of aluminum (Al), tungsten (W), titanium (Ti), Tantalum (Ta), Molybdenum (Mo), Nickel (Ni), Platinum (Pt), Copper (Cu) , gold (Au), silver (Ag), manganese (Mn), neodymium (Nd) and other metal materials, are alloy materials whose main components are these metal materials, or nitride materials whose components are these metal materials. The conductive material may be a low-resistance conductive material such as aluminum. It is preferable to form the material from

[0141] When the conductive film 110 is formed on the conductive layers 108a to 108c, the two films react with each other. For example, when ITO is used as the conductive layers 108a to 108c, the conductive film 11 If aluminum is used as 0, a chemical reaction may occur. In order to prevent chemical reactions from occurring, It is desirable to use a high melting point material for the above-mentioned. For example, molybdenum is an example of a high melting point material. Examples of materials that can be used include titanium, tungsten, tantalum, and chromium. It is preferable to form the conductive film 110 as a multi-layer film by using a material with high conductivity on the previously formed film. Materials with high electrical conductivity include aluminum, copper, and silver. When the film 110 is formed in a laminated structure, the first layer is made of molybdenum, the second layer is made of aluminum, The third layer is a layer of molybdenum, or the first layer is molybdenum and the second layer is a small amount of neodymium. The first layer is made of aluminum, and the second layer is made of molybdenum. By so doing, hillocks can be prevented.

[0142] Next, a resist mask 164 is formed over the conductive film 110. The conductive film 110 is etched using the etching method to form island-shaped conductive layers 110a (FIG. 4). (See (C)).

[0143] Specifically, etching is performed so that the conductive film 110 remains on the conductive layer 108a. In this case, the conductive film 110 formed over the conductive layer 108a functioning as the electrode 136 is removed. In other words, the conductive layer 110a functions as a part of the wiring 126.

[0144] Next, a light-transmitting semiconductor film is formed to cover the conductive layers 108a and 108b, the insulating layer 106, and the like. 112 is formed (see FIG. 4(D)).

[0145] The semiconductor film 112 may be made of an oxide semiconductor containing, for example, In, M, or Zn. Here, M is a metal selected from Ga, Fe, Ni, Mn, Co, etc. In addition, when Ga is used as M, the thin film is treated as In. In addition, in the above oxide semiconductor, M is contained. In addition to the metal elements contained in the alloy, Fe, Ni and other transition metal elements, or the transition metal elements, The semiconductor film 112 may contain an oxide of a metal. The impurities may include silicon oxide, germanium oxide, and aluminum oxide. Insulating oxides such as silicon nitride and aluminum nitride Insulating oxynitrides such as silicon oxynitride and aluminum oxynitride are used. These insulating oxides or insulating nitrides impair the electrical conductivity of the oxide semiconductor. By adding insulating impurities to the oxide semiconductor, the oxide By suppressing the crystallization of the oxide semiconductor, This makes it possible to stabilize the characteristics of the thin film transistor.

[0146] By adding impurities such as silicon oxide to the In-Ga-Zn-O oxide semiconductor, Even if heat treatment is performed at 300° C. to 600° C., the oxide semiconductor is not crystallized or microcrystalline grains are not generated. The In-Ga-Zn-O oxide semiconductor layer is used as the channel formation region. In the manufacturing process of thin-film transistors, the S value (subthreshold value) is increased by heat treatment. d swing value) and field effect mobility can be improved, but Even in such a case, it is possible to prevent the thin-film transistor from becoming normally on. In addition, even if thermal stress or bias stress is applied to the thin film transistor, This can prevent voltage fluctuations from occurring.

[0147] In addition to the above, In is also used as an oxide semiconductor for the channel formation region of a thin-film transistor. -Sn-Zn-O, In-Al-Zn-O, Sn-Ga-Zn-O, Al-Ga- Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Z nO-based, In-O-based, Sn-O-based, and Zn-O-based oxide semiconductors can be used. That is, impurities that suppress crystallization and maintain the amorphous state are added to these oxide semiconductors. By adding impurities, the characteristics of the thin film transistor can be stabilized. , insulating oxides such as silicon oxide, germanium oxide, and aluminum oxide, Insulating nitrides such as silicon nitride and aluminum nitride, or silicon oxynitride and insulating oxynitrides such as aluminum oxynitride.

[0148] As an example, an oxide semiconductor target containing In, Ga, and Zn (In 2 O 3 :Ga 2 O 3 The semiconductor film 112 can be formed by sputtering using a ZnO film (ZnO=1:1:1). The sputtering conditions are, for example, a distance between the substrate 100 and the target of 30 mm to 50 mm. 500mm, pressure 0.1Pa~2.0Pa, DC power supply 0.25kW~5.0 kW (when using an 8-inch diameter target), atmosphere is argon, oxygen, or The atmosphere may be a mixture of argon and oxygen. It is sufficient to set it to about 200 nm.

[0149] The sputtering method is RF sputtering, which uses a high-frequency power source for the sputtering power supply, or D C sputtering method, pulsed DC sputtering method that applies a direct current bias in a pulsed manner, etc. RF sputtering is mainly used to deposit insulating films, while DC sputtering is It is mainly used when forming metal films.

[0150] Also, a multi-target sputtering device capable of mounting multiple targets of different materials may be used. In sputtering equipment, different films can be laminated in the same chamber, or It is also possible to simultaneously sputter multiple types of materials to form a single film. - A method using a magnetron sputtering device equipped with a magnetic field generating mechanism inside (magnetron sputtering method) and ECR sputtering method using plasma generated by microwaves. Also, a chemical reaction between the target material and the sputtering gas components may be performed during the film formation. The reactive sputtering method, which forms a compound from these, and the via method, which applies a voltage to the substrate during film formation, A sputtering method or the like may also be used.

[0151] The semiconductor material used for the channel layer of the transistor 152 is an oxide semiconductor. For example, the silicon layer (amorphous silicon layer, microcrystalline silicon layer, polycrystalline silicon layer, etc.) A crystalline silicon layer or a single crystal silicon layer may be used as the channel layer of the transistor 152. Alternatively, a light-transmitting organic semiconductor material may be used as the channel layer of the transistor 152. Alternatively, a carbon nanotube or a compound semiconductor such as gallium arsenide or indium phosphide may be used. Note that the semiconductor layer has a light-transmitting property when at least the conductive layer 1 forming the wiring 122 is 04a, it is only necessary that the conductive layer 110a forming the wiring 126 has a light-transmitting property.

[0152] In this embodiment, the formation of the conductive layers (conductive layer 108a, conductive layer 108b, conductive layer 110a) In order to provide the semiconductor film 112 later, the semiconductor film 112 is removed during etching of these conductive layers. Therefore, the semiconductor film 112 can be formed thin. By providing the semiconductor film 112 thinly, the light transmitting property is improved and a depletion layer is formed. As a result, the S value of the transistor is reduced, and the switching It is possible to improve the characteristics and also reduce the off-state current.

[0153] Note that the thickness of the semiconductor film 112 is formed to be thinner than the conductive layers 108a and 108b. However, the present invention is not limited to this.

[0154] Next, a resist mask 165 is formed over the semiconductor film 112. The semiconductor film 112 is etched using the etching agent to form an island-shaped semiconductor layer 112a. (See Figure 5(A)).

[0155] The semiconductor layer 112a may be formed before the conductive film 110 is formed (after FIG. 4(A)). In this case, after the process of FIG. 4A is performed, the semiconductor film 112 is formed and etched. By this, an island-shaped semiconductor layer 112a is formed, and then the conductive film 110 is formed. .

[0156] After the semiconductor layer 112a is formed, the semiconductor layer 112a is annealed at 100 It is preferable to carry out the heat treatment at a temperature of from 200 to 400°C. For example, Heat treatment can be performed at 350°C for 1 hour in a nitrogen atmosphere. The semiconductor layer 112a is rearranged at the atomic level. This heat treatment (including photo-annealing) The advantage of this is that it can release the distortion that inhibits the movement of carriers in the island-shaped semiconductor layer 112a. It is important to perform the above heat treatment after the formation of the semiconductor film 112. There is no particular limitation.

[0157] Next, the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c are covered with Insulating layer 114 is formed in this manner (see FIG. 5(B)).

[0158] The insulating layer 114 is formed of a material containing oxygen or nitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. Insulating films with carbon such as DLC (Diamond-Like Carbon), epoxy, Polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. A film made of a siloxane material such as a siloxane resin or the like is provided in a single layer or laminate structure. It is possible.

[0159] The insulating layer 114 can also function as a color filter. By providing a color filter on the 00 side, there is no need to provide a color filter on the opposing substrate side. This eliminates the need for margins to adjust the positions of the two boards, and the panel Manufacturing can be made easier.

[0160] Next, a conductive layer 116 is formed over the insulating layer 114 (see FIG. 5C). The conductive layer 108c can function as a pixel electrode and is formed to be electrically connected to the conductive layer 108c. do.

[0161] The conductive layer 116 can be formed using a light-transmitting material. Examples of the material include indium tin oxide (InTinOxide). ITO), indium tin oxide with silicon oxide (ITSO), organo-indium, organo-tin Indium zinc oxide (ZnO) and the like can be used. Indium Zinc Oxide (IZO), zinc oxide with gallium (Ga) Doped, tin oxide (SnO 2 ), indium oxide with tungsten oxide, acid Indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium may also be used. In this way, the film can be formed in a single layer structure or a laminated structure. It is desirable to make the light transmittance of all of the multiple films sufficiently high. In order to improve the light transmitting property, the conductive layer 116 is formed thinner than the conductive layers 102a and 108a. However, the present invention is not limited to this.

[0162] Through the above steps, a semiconductor device can be manufactured. In this way, a light-transmitting transistor 152 and a light-transmitting storage capacitor portion 154 are formed. Therefore, even when a transistor or a capacitor is disposed in a pixel, Since light can pass through the area where the transistor and the capacitor are formed, Therefore, the aperture ratio can be improved. The wiring that connects the transistor to the semiconductor device should be made of a material with low resistivity and high conductivity. This reduces distortion of the signal waveform and reduces the voltage drop caused by wiring resistance. do.

[0163] In this embodiment, the semiconductor layer 112a is provided on the electrode 136 and the electrode 138. However, the present invention is not limited to this. For example, the semiconductor layer 112 Alternatively, a structure in which an electrode 136 and an electrode 138 are provided on the a (channel etch type) may be used (FIG. 4 5). Note that FIG. 45(A) is a top view, and FIG. 45(B) is a bottom view of FIG. -Corresponds to the cross section between - and B.

[0164] The structure shown in FIG. 45 is the same as that shown in FIG. 3(E), except that a semiconductor film 112 is formed on the insulating layer 106. After that, the conductive film 108 is formed.

[0165] In the structure shown in FIG. 45, a channel protection film is formed on the semiconductor layer 112a. A structure in which an insulating layer 127 is provided (channel protection type) may be used (see FIG. 46(A)). By providing the layer 127, the semiconductor layer 112a can be prevented from being damaged when the conductive film 108 is patterned. can be protected.

[0166] (Embodiment 2) In this embodiment mode, a manufacturing method of a semiconductor device different from that in the above-described embodiment mode 1 will be described with reference to the drawings. Specifically, the following description will be given with reference to the case where a semiconductor device is manufactured using a multi-tone mask. Note that the manufacturing process of the semiconductor device in this embodiment mode is the same as that of the embodiment in most respects. This is common to condition 1. Therefore, in the following, the overlapping parts will be omitted and the differences will be explained. This will be explained in detail.

[0167] First, a conductive film 102 is formed on a substrate 100, and then a conductive film 104 is formed on the conductive film 102. (See FIG. 7(A)). A base insulating film may be provided between the substrate 100 and the conductive film 102. .

[0168] Next, resist masks 171a to 171c are formed over the conductive film 104 (see FIG. 7B). ).

[0169] The resist masks 171a to 171c are formed with different thicknesses by using a multi-tone mask. A resist mask can be selectively formed.

[0170] A multi-tone mask is a mask that can perform exposure with multiple levels of light intensity. Representative examples include: Exposure is performed with three levels of light intensity: exposed area, half-exposed area, and unexposed area. A multi-tone mask is used. By this, it is possible to produce a film having multiple (typically two) thicknesses by a single exposure and development process. A resist mask can be formed. Therefore, by using a multi-tone mask, The number of masks can be reduced. The light transmittance in this case will be described.

[0171] FIG. 6 shows a cross section of a typical multi-tone mask. FIG. 6(A-1) shows a gray-tone mask 40. FIG. 6(B-1) shows a case where a half-tone mask 414 is used. is.

[0172] The gray-tone mask 403 shown in FIG. 6(A-1) is a light-shielding layer on a light-transmitting substrate 400. and a diffraction grating 402 formed by a pattern of the light-shielding layer. It is composed of:

[0173] The diffraction grating 402 is a grating having slits and dots spaced at intervals equal to or less than the resolution limit of the light used for exposure. The light transmittance is controlled by providing a mesh or the like on the diffraction grating 402. The slits, dots or meshes may be periodic or non-periodic. may be also possible.

[0174] The light-transmitting substrate 400 may be made of quartz or the like. The light-shielding layer constituting the grating 402 may be formed using a metal film, and is preferably made of chromium or is provided by chromium oxide or the like.

[0175] When the gray-tone mask 403 is irradiated with light for exposure, as shown in FIG. As shown in the figure, the light transmittance in the area overlapping the light shielding portion 401 is 0%, and the light transmittance in the area overlapping the light shielding portion 401 or the diffraction grating 402 is 0%. The light transmittance in the area where the grating 402 is not provided can be 100%. The light transmittance of the diffraction grating 402 is generally in the range of 10% to 70%. The spacing of the dots or meshes can be adjusted.

[0176] The halftone mask 414 shown in FIG. 6(B-1) is a semi-transparent mask formed on a light-transmitting substrate 411. The light-transmitting portion 412 is made of a light-transmitting layer, and the light-shielding portion 413 is made of a light-shielding layer. It is being done.

[0177] The semi-transparent portion 412 is a layer of MoSiN, MoSi, MoSiO, MoSiON, CrSi, etc. The light-shielding portion 413 can be formed using a material similar to the light-shielding layer of a gray-tone mask. It may be formed using a metal film, and is preferably formed using chromium or chromium oxide or the like.

[0178] When the halftone mask 414 is irradiated with light for exposure, as shown in FIG. As shown in the figure, the light transmittance in the area overlapping the light shielding portion 413 is 0%, and the light transmittance in the area overlapping the light shielding portion 413 or the semi-transparent portion is 0%. The light transmittance in the area where the light portion 412 is not provided can be 100%. The light transmittance of the semi-transparent portion 412 is generally in the range of 10% to 70%. The thickness can be adjusted by the type or the film thickness to be formed.

[0179] As described above, by using a multi-tone mask, an exposed portion, an intermediate exposed portion, and an unexposed portion can be obtained. A mask with three exposure levels can be formed, and a single exposure and development process can be performed. A resist mask having regions of multiple (typically two) thicknesses can be formed. Therefore, by using a multi-tone mask, the number of photomasks can be reduced. do.

[0180] FIG. 7B shows a case where a halftone mask is used as the multi-tone mask. The halftone mask comprises a light-transmitting substrate 180 and a light-shielding layer provided on the substrate 180. The conductive layer 181a, 181c and the semi-transparent layer 181b, 181d are arranged. On the film 104, a thick resist mask 171a, a thin resist mask 171b, and a thick portion are formed. A resist mask 171c having a thin portion is formed.

[0181] Next, the conductive films 102 and 104 are masked using resist masks 171a to 171c. The necessary portions are etched to form the conductive layer 102a, the conductive layer 102b, the conductive layer 104a', and the conductive layer 104b' is formed (see FIG. 7(C)).

[0182] Next, ashing is performed on the resist masks 171a to 171c using oxygen plasma. The resist masks 171a to 171c are ashed with oxygen plasma. As a result, the resist mask 171b is removed, and the conductive layer 102a is left unremoved. In addition, the resist masks 171a and 171c are shrunk, and the resist The resist masks 171a' and 171c' remain (see FIG. 8(A)). By using a multi-tone mask as a stop mask, an additional resist mask can be used. Since no additional processing is required, the process can be simplified.

[0183] Next, the exposed conductive layers 104a′ and 104c′ are removed using resist masks 171a′ and 171c′. The conductive layer 104b' is etched to form the conductive layer 104a and the conductive layer 104b. In this case, a conductive layer 102a functioning as the electrode 132 is formed on the conductive layer 102a (see FIG. 8B). The conductive layer 104a' formed on the wiring 124 and the wiring 124 provided in the region to be arranged in the pixel portion are The conductive layer 104b' is removed.

[0184] As a result, the electrode 132 is formed of the conductive layer 102a having a light-transmitting property, and the wiring 122 is formed of the conductive layer 102a having a light-transmitting property. A laminated structure of a conductive layer 102a having a resistance of 102.5 and a conductive layer 104a having a resistance lower than that of the conductive layer 102a. It is formed by the structure.

[0185] In this manner, the conductive layer 102a functioning as the electrode 132 is formed using a light-transmitting material. This can improve the aperture ratio of the pixel portion. The conductive layer that constitutes the electrode 132 (conductive layer 102a in this example) and the conductive layer that constitutes the electrode 132 are The conductive layer 104a is formed using a metal material having a lower resistivity than the conductive layer 102a. This reduces wiring resistance and reduces waveform distortion, resulting in lower power consumption. In addition, a conductive layer having a light-shielding property (conductive layer) can be used as the wiring 122. By using the insulating layer 104a), the area between adjacent pixels can be shielded from light. Therefore, the black matrix can be omitted. However, this is not limiting. .

[0186] In addition, by using a multi-tone mask, the conductive layer 102a and the conductive layer 102b which become the wiring 122 are 4a, the surface area of ​​each layer is different. The surface area of ​​the conductive layer 104a is larger than the surface area of ​​the conductive layer 102b. The surface area of ​​the conductive layer 104b is larger than the surface area of ​​the conductive layer 104b.

[0187] Next, the conductive layer 102a, the conductive layer 102b, the conductive layer 104a, and the conductive layer 104b are covered with After the insulating layer 106 is formed, a conductive film 108 and a conductive film 110 are formed in this order on the insulating layer 106. It is formed by laminating (see FIG. 8(C)).

[0188] Next, resist masks 172a to 172d are formed over the conductive film 110 (see FIG. 9A). ).

[0189] The resist masks 172a to 172d are formed with different thicknesses by using a multi-tone mask. A resist mask can be formed.

[0190] FIG. 9A shows a case where a halftone mask is used as the multi-tone mask. The halftone mask is made up of a light-transmitting substrate 182 and a semi-transmitting substrate 183 disposed on the substrate 182. The light-shielding layers 183a, 183d and the light-shielding layers 183b, 183c, 183e are arranged in the same manner. Therefore, a thick resist mask 172c, a thin resist mask 172b, and 172d, a resist mask 172a having thick and thin portions is formed.

[0191] Next, the conductive film 108 and the conductive film 110 are masked using resist masks 172a to 172d. The necessary portions are etched to remove the conductive layers 108a to 108c and the conductive layers 110a' to 110c' is formed (see FIG. 9(B)).

[0192] Next, ashing is performed on the resist masks 172a to 172d using oxygen plasma. The resist masks 172a to 172d are ashed with oxygen plasma. As a result, the resist masks 172b and 172d are removed, and the conductive layers 110b' and 110c are In addition, the resist masks 172a and 172c are shrunk, and the resist mask 17 2a' and 172c' remain (see FIG. 9(C)). By using a multi-tone mask, an additional resist mask is not required. Therefore, the process can be simplified.

[0193] Next, using resist masks 172a' and 172c', a part of the conductive layer 110a', Conductive layer 110a is formed by etching layer 110b' and conductive layer 110c'. (See FIG. 10(A)). In this case, a conductive layer 110a' is formed on the conductive layer 108a. A part of the conductive layer 110b' formed on the conductive layer 108b and a part of the conductive layer 110b' formed on the conductive layer 108c The conductive layer 110c' is then removed.

[0194] As a result, the electrode 136 is formed of the conductive layer 108a having a light-transmitting property, and the wiring 126 is formed of the conductive layer 108b having a light-transmitting property. A laminated structure of a conductive layer 108a having a resistance of 108a and a conductive layer 110a having a resistance lower than that of the conductive layer 108a. The electrode 138 is formed using a light-transmitting conductive layer 108b.

[0195] Thus, the conductive layer 108a functions as the electrode 136 and the conductive layer 108b functions as the electrode 138. By forming the conductive layer 108b from a light-transmitting material, the aperture ratio of the pixel portion is improved. In addition, the conductive layer that functions as the wiring 126 may be a conductive layer that constitutes the electrode 136. A metal layer (here, conductive layer 108a) and a metal material having a lower resistivity than the conductive layer 108a are By forming the conductive layer 110a using the above-mentioned method, the wiring resistance is reduced and the waveform is prevented from being rounded. As a result, the power consumption can be reduced. By using a conductive layer having a light-shielding property (conductive layer 110a in this example) as a light-shielding layer, The area between adjacent pixels can be shaded from light.

[0196] Next, an oxide semiconductor film is formed to cover the conductive layers 108a and 108b, the insulating layer 106, and the like. Then, the oxide semiconductor film is etched to form island-shaped semiconductor layers 112a. (See FIG. 10(B)).

[0197] Next, the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c are covered with After forming the insulating layer 114 as described above, a conductive layer 116 is formed on the insulating layer 114 (FIG. The conductive layer 116 is formed so as to be electrically connected to the conductive layer 108c. .

[0198] Through the above steps, a semiconductor device can be manufactured. This creates a mask with three exposure levels: exposed, intermediate, and unexposed. It is possible to form regions of multiple thicknesses (typically two types) by a single exposure and development process. Therefore, by using a multi-tone mask, Therefore, the number of photomasks can be reduced.

[0199] In this embodiment, both the process of forming the gate wiring and the process of forming the source wiring are performed in the same manner. A case where a multi-tone mask is used in both processes has been explained. A multi-tone mask may be used in either the process of forming the source wiring or the process of forming the source wiring.

[0200] (Embodiment 3) In this embodiment mode, a semiconductor device different from that in the above-described embodiment mode 1 will be described with reference to the drawings. The configuration of the semiconductor device shown below is similar in many respects to that shown in FIGS. 1 and 2. Therefore, in the following, overlapping parts will be omitted and only the differences will be explained.

[0201] Another configuration example of the semiconductor device described in the first embodiment is shown in FIGS. 12, FIG. 11 shows a top view, and FIG. 12(A) shows a cross section between AB in FIG. 12(B) corresponds to the cross section taken along the line C-D in FIG.

[0202] The semiconductor device shown in FIGS. 11 and 12 is the semiconductor device shown in FIGS. 1 and 2, in which the gate arrangement The wire 120 is formed by laminating a light-transmitting conductive layer 102a over a conductive layer 104a. 126 shows a case where a conductive layer 108a having a light-transmitting property is stacked on a conductive film 110. That is, in the structure shown in FIG. 1 and FIG. 2, the gate wiring 120 and the wiring 126 The laminated structure of the conductive layers in the first embodiment is reversed.

[0203] In the configuration shown in FIGS. 11 and 12, the electrode 132 electrically connected to the gate line 120 The conductive layer 102a is formed of a light-transmitting conductive layer 102b, and the electrode 136 is electrically connected to the wiring 126. The light-transmitting conductive layer 108a is formed.

[0204] In addition to the configurations shown in FIGS. 11 and 12, the wiring 12 The laminated structure of the conductive layers in either the wiring 126 or the wiring 2 may be reversed. stomach.

[0205] 11 and 12, the semiconductor layer 112a is provided on the electrode 136 and the electrode 138. However, the present invention is not limited to this. For example, the semiconductor layer 11 Alternatively, a structure in which electrodes 136 and 138 are provided on the substrate 2a (channel etch type) may be used (see FIG. 47). Note that FIG. 47(A) is a top view, and FIG. 47(B) is a top view of FIG. It corresponds to the cross section between AB.

[0206] In the structure shown in FIG. 47, a channel protection film is formed on the semiconductor layer 112a. A structure in which an insulating layer 127 is provided (channel protection type) may be used (see FIG. 46B).

[0207] Next, another configuration example of the semiconductor device described in the above embodiment 1 is shown in FIG. 13(A) is a top view, and FIG. 13(B) is a diagram showing the relationship between A and B in FIG. 13(A). corresponds to the cross section.

[0208] The semiconductor device shown in FIG. 13 is the semiconductor layer 112a in the semiconductor device shown in FIG. is provided between the conductive layer 108a and the conductive layer 110a which become the wiring 126. After the conductive layer 108a is formed, the semiconductor layer 112a is formed before the conductive layer 110a is formed. Complete.

[0209] As shown in FIG. 13, a semiconductor layer 112a is provided between a conductive layer 108a and a conductive layer 110a. This increases the contact area between the electrode 136 and the wiring 126 and the semiconductor layer 112a, The contact resistance can be reduced.

[0210] Next, another configuration example of the semiconductor device described in the first embodiment is shown in FIG. 14(A) is a top view, and FIG. 14(B) is a diagram showing the relationship between C and D in FIG. 14(A). corresponds to the cross section.

[0211] In the semiconductor device shown in FIG. 14, a conductive layer that becomes an electrode of a storage capacitor 154 is provided in a wiring 124. Below the contact hole 125 formed when connecting 108c and the conductive layer 116 In this embodiment, a conductive layer having a light-shielding property (conductive layer 104b in this embodiment) is provided in the region where the light-shielding layer 104 is located. That is, the configuration shown in FIG. 14 is the same as the configuration shown in FIG. The conductive layer 102b having a light-transmitting property and the conductive layer The conductive layer 104b has a lower resistance than the conductive layer 102b and has a light-shielding property. It is.

[0212] Usually, the conductive layer 108c and the conductive layer 116 are electrically connected through a contact hole 125. In this case, a recess is formed on the surface of the conductive layer 116 due to the contact hole 125. As a result, the alignment of the liquid crystal molecules provided on the recesses of the conductive layer 116 is disturbed, This may cause light leakage.

[0213] Therefore, as shown in FIG. 14, a film having a light-shielding property is selected below the contact hole 125. By forming the recesses on the surface of the conductive layer 116 in a substantially uniform manner, light leakage due to the recesses on the surface of the conductive layer 116 can be reduced. In addition, the conductive layer 104b having a lower resistance than the conductive layer 102b can be used as a light-shielding film. By using the above, the resistance of the wiring 124 can be reduced. The positions for forming the contact holes 125 are concentrated at one end of the wiring 124, By providing the conductive layer 104b on one end side of the wiring 124, the aperture ratio of the pixel section 150 is can be improved.

[0214] In addition, the shape of the conductive layer 104b is such that, if the conductive layer 104b is disposed below the contact hole 125, The shape is not limited to that shown in FIG. If it is desired to reduce the resistance, the conductive layer 124 is In this case, the contact hole 12 may be formed by extending the layer 104b. 5 are provided in a concentrated manner on one end side of the wiring 124, and the conductive layer 104b is also provided on one end side of the wiring 124. By providing the second insulating film 144 on the side of the pixel section 150, the aperture ratio of the pixel section 150 can be improved.

[0215] In addition, in order to reduce light leakage and to further improve the aperture ratio of the pixel section 150, In the direction parallel to the line 124, the conductive layer 104b is not electrically connected but is contacted. The island-shaped conductive layer 104b may be provided in the region overlapping the cut hole 125 (FIG. 1 5(A) and (B). In FIG. 15, FIG. 15(A) shows a top view, and FIG. (B) corresponds to the cross section between CD in FIG. 15(A).

[0216] As shown in FIG. 15, under a contact hole 125 formed in the wiring 124 A light-shielding film is provided on the side of the wiring 124, and a light-shielding film is provided on the side of the wiring 124. A light-shielding film may be provided below a contact hole formed in the region (region connected to the light-shielding film).

[0217] Next, another configuration example of the semiconductor device described in the above embodiment 1 is shown in FIG. 16(A) is a top view, and FIG. 16(B) is a diagram showing the relationship between A and B in FIG. 16(A). corresponds to the cross section.

[0218] The semiconductor device shown in FIG. 16 has a high conductivity region (n+ region 11) in a part of the semiconductor layer 112a. 3a, 113b) are provided, and the electrodes 136 and 138 are overlapped with the electrode 132. The n+ regions 113a and 113b are formed in the semiconductor layer 112. a, it can be provided in the region connected to the electrode 136 and the region connected to the electrode 138. The n+ regions 113a and 113b may be provided so as to overlap the electrode 132. Alternatively, they may be provided so as not to overlap each other.

[0219] The n+ regions 113a and 113b are formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen can be formed in the portion of the semiconductor layer 112a where it is desired to increase the electrical conductivity. It may be added.

[0220] For example, the semiconductor layer 112a is formed using an oxide semiconductor containing In, M, or Zn. After that, a resist mask 168 is formed on a part of the semiconductor layer 112a (see FIG. 36(A)). By adding hydrogen ions, n+ regions 113a and 113b are formed in the semiconductor layer 112a. It is possible to form (see FIG. 36(B)).

[0221] In this way, the electrodes 136 and 138 are arranged so as not to overlap with the electrode 132. This suppresses parasitic capacitance between the electrodes 136 and 138 and between the electrodes 132 and 136. This can be done.

[0222] In the above-described configuration, the transistor 152 has a structure in which In the above example, the top surface shape of the channel formation region formed in the semiconductor device is a parallel type. In addition, as shown in FIG. 17, the top view of the channel formation region is a C-shaped (U-shaped) transistor. In this case, the conductive layer 108a functioning as the electrode 136 may be formed in a C-shape or The conductive layer 108b is formed in a U-shape and is arranged to surround the conductive layer 108b which functions as the electrode 138. By using such a configuration, the transistor 15 2 can increase the channel width.

[0223] In the above-mentioned configuration, a semiconductor is formed on the electrode 132 electrically connected to the wiring 122. Although the case where the layer 112a is provided has been described above, the present invention is not limited to this. A semiconductor layer 112a may be provided on the wiring 122. In this case, the wiring 122 is a gate. The wiring 122 also functions as a gate electrode. Of course, the wiring 122 can be formed by a light-transmitting conductive layer 102a and a light-transmitting conductive layer 104a. The conductive layer 104a may have a laminated structure. This prevents the semiconductor layer 112a, which is to be the channel formation region, from being irradiated with light. This structure uses a material whose characteristics are affected by light as the semiconductor layer that forms the channel. This is effective when using a fee.

[0224] Also, as shown in FIG. 37, the wiring 122 may be formed only of the conductive layer 104a. The wiring 126 may be formed only of the conductive layer 110a. It may be formed only by

[0225] As shown in FIG. 38, in the wiring 122, a part of the conductive layer 108a (transistor 152) to be used as the electrode 132. In addition, in the wiring 126, a part of the conductive layer 110a (used as an electrode 136 of the transistor 152) is The configuration may be such that the second electrode is selectively provided in the portion (part used for the purpose).

[0226] In FIG. 38, the conductive layer 102a is provided below the conductive layer 104a. Alternatively, the conductive layer 102a may be provided on the conductive layer 104a (see FIG. 39). In addition, the conductive layer 108a may be provided over the conductive layer 110a (see FIG. 39).

[0227] In the above-described configuration, the storage capacitor 154 is provided using the wiring 124. As shown in FIG. 40, the wiring 124 is not provided, and the conductive layer 108c and the adjacent The conductive layer 102a constituting the wiring 122 of the adjacent pixel is used as an electrode of the storage capacitor 154. The above configuration may also be used.

[0228] 13 to 17 and 37 to 40, semiconductors are formed on the electrodes 136 and 138. Although the structure in which the layer 112a is provided (bottom contact type) has been shown, the present invention is not limited to this. As shown in FIGS. 45 to 47, the electrodes 136 and 138 are formed on the semiconductor layer 112a. Alternatively, a channel protection film may be provided on the semiconductor layer 112a. Alternatively, a structure in which an insulating layer 127 functioning as a channel protection layer may be provided (channel protection type).

[0229] (Embodiment 4) In this embodiment mode, a semiconductor device different from those in the first and second embodiments will be described with reference to the drawings. Specifically, a case where a plurality of transistors are provided in one pixel portion will be described. The configuration of the semiconductor device shown below is similar in many respects to that shown in FIGS. 1 and 2. Therefore, in the following, overlapping parts will be omitted and only the differences will be explained.

[0230] A structural example of the semiconductor device described in this embodiment mode is shown in FIGS. FIG. 18 shows a top view, and FIG. 19(A) corresponds to a cross section taken along line AB in FIG. 18. FIG. 19B corresponds to the cross section between CD in FIG.

[0231] The semiconductor device shown in FIG. 18 and FIG. 19 includes a switching transistor 152 and a driving transistor 153. A pixel section 150 in which a transistor 156 and a storage capacitor section 158 are provided, a wiring 122, and a wiring The wiring 126 and the wiring 128 are connected to each other. The configuration shown in FIG. 18 and FIG. 19 is, for example, an EL display. The present invention can be applied to the pixel portion of a display device.

[0232] The transistor 156 includes an electrode 232 provided on the substrate 100 and a gate insulating film 233 provided on the electrode 232. The insulating layer 106 is provided with an insulating film 236 and an electrode 238 provided on the insulating layer 106. 106 so as to overlap the electrode 232 and is provided on the electrodes 236 and 238. The semiconductor layer 112b is formed by bonding the first and second electrodes 112a and 112b to each other

[0233] The electrode 232 can function as a gate electrode. The semiconductor layer 112b can function as a source electrode or a drain electrode. The wiring 128 can be formed using an oxide semiconductor. However, the present invention is not limited to these.

[0234] The electrode 232 is formed using a light-transmitting conductive layer 102c and is connected to the transistor 15. The conductive layer 108b and the conductive layer 138 are electrically connected to each other. Electrical connection to 102c can be made via conductive layer 117.

[0235] The conductive layer 117 can be formed in the same process as the conductive layer 116. After forming the layer 114, a contact hole 118a reaching the conductive layer 108b and a conductive layer 1 After forming a contact hole 118b reaching 02c, a conductive layer 116 is formed on the insulating layer 114. and a conductive layer 117. The contact holes 118a and 118b are They can be formed in the same step (the same etching process).

[0236] The conductive layer 102c can be formed in the same process as the conductive layer 102a.

[0237] The semiconductor layer 112b can be formed in the same process as the semiconductor layer 112a.

[0238] The electrode 236 is formed using a conductive layer 108d having a light-transmitting property and is electrically connected to the wiring 128. The wiring 128 is configured to have a laminated structure of a conductive layer 108d and a conductive layer 110b. In addition, the conductive layer 108d constituting the electrode 236 and the conductive layer 108c constituting the wiring 128 are The conductive layer 108d is formed of the same islands.

[0239] In addition, in FIG. 18 and FIG. 19, the conductive layer 110b is laminated on the conductive layer 108d as the wiring 128. However, the conductive layer 108d may be laminated on the conductive layer 110b.

[0240] The electrode 238 is formed using a conductive layer 108e having a light-transmitting property. Electrically connected.

[0241] The conductive layers 108d and 108e are formed in the same process as the conductive layers 108a and 108b. The conductive layer 110b can be formed in the same process as the conductive layer 110a. It is possible.

[0242] The storage capacitor 158 has the insulating layer 106 as a dielectric, a light-transmitting conductive layer 102c, and a light-transmitting The conductive layer 108d having a conductive property is configured as an electrode. The electrode 138 of the transistor 152 is electrically connected to the electrode 138 .

[0243] As described above, the transistor 152, the transistor 156, and the storage capacitor 158 are By forming the region in which the transistors 152 and 156 are formed from a material having such properties, Since light can be transmitted through the region in which the storage capacitor 158 is formed, the pixel portion In addition, the aperture ratio of the wiring 122, the wiring 126, and the wiring 128 can be improved. By providing a part of the wiring with a conductive layer made of a metal material with low resistivity, the wiring resistance is reduced. , power consumption can be reduced.

[0244] In addition, the conductive layer 104a constituting the gate wiring, the conductive layer 110a constituting the source wiring, and The conductive layer 110b constituting the wiring 128 is formed using a metal material having a light-shielding property. This makes it possible to reduce wiring resistance and to block light between adjacent pixel units. That is, the gate wiring arranged in the row direction, the source wiring and the wiring 128 arranged in the column direction This makes it possible to shield the gaps between pixels from light without using a black matrix. .

[0245] 18 and 19, the electrical connection between the conductive layer 108b and the conductive layer 102c is shown as the conductive layer 1. 17, but the present invention is not limited to this. For example, as shown in FIG. The conductive layer 102c and the conductive layer 108b are connected to each other through a contact hole 119 formed in the layer 106. In this case, a contact hole 119 is formed in the insulating layer 106. In the structure shown in FIG. 20, the conductive layer 108b and the conductive A conductive layer 116 may also be disposed over the connection area of ​​layer 102c.

[0246] In this embodiment, the pixel unit 150 includes two transistors. This is not a limitation. Three or more transistors may be arranged in parallel or in series. .

[0247] In this embodiment mode, the case where the transistor has a bottom contact structure is described. However, the present invention is not limited to this. The transistor structure may be a channel etch type or a channel It may also be of the ru protection type.

[0248] (Embodiment 5) In this embodiment mode, a display device, which is one mode of a semiconductor device, has thin film transistors on the same substrate. The case where at least a part of the driver circuit and the pixel portion are provided using a transistor will be described below. do.

[0249] FIG. 22 is a block diagram of an active matrix liquid crystal display device, which is an example of a display device. The display device shown in FIG. 22A has a pixel structure including a display element on a substrate 5300. A pixel portion 5301 having a plurality of pixels, a scanning line driver circuit 5302 for selecting each pixel, and a signal line driver circuit 5303 for controlling input of a video signal to the pixel.

[0250] The light-emitting display device shown in FIG. 22(B) has a plurality of pixels each having a display element over a substrate 5400. A pixel portion 5401 for selecting each pixel, a first scanning line driver circuit 5402 for selecting each pixel, and a second scanning line driver circuit 5403 for selecting each pixel. A driver circuit 5404 and a signal line driver circuit 5405 for controlling the input of a video signal to a selected pixel 403.

[0251] In the case where a video signal input to a pixel of the light-emitting display device shown in FIG. 22(B) is in a digital format, When a pixel is turned on, the transistor is switched on and off to make it either emitting light or not. Therefore, gray scale display can be performed using area gray scale or time gray scale. The stacked gray scale method divides one pixel into multiple sub-pixels, and each sub-pixel is independently driven based on a video signal. The time gray scale method is a driving method that displays gray scales by changing the time when the pixel emits light. This is a driving method that displays gradations by controlling the period during which the liquid crystal display is turned on.

[0252] Light-emitting elements have a higher response speed than liquid crystal elements, so they are more suitable for time gray scale modulation than liquid crystal elements. When using the time gray scale method, one frame period is divided into multiple subframe periods. Then, in accordance with the video signal, the light emitting element of the pixel is made to emit light in each sub-frame period. By dividing the period into multiple subframes, one frame can be The total length of time that a pixel emits light during a period can be controlled by a video signal. It is possible to display gradations.

[0253] In the light-emitting display device shown in FIG. 22B, two switching TFTs are provided for one pixel. In the case where the first scanning line which is the gate wiring of one of the switching TFTs is arranged The signal to be input to the other switching TFT is generated by the first scanning line driver circuit 5402. A signal input to the second scanning line, which is the gate wiring of the second pixel, is generated by a second scanning line driver circuit 5404. In this example, a signal input to the first scanning line and a signal input to the second scanning line are The signal may be generated by one scanning line driving circuit. The operation of the switching element is controlled by the number of switching TFTs that each pixel has. In some cases, each pixel may have a plurality of scanning lines for use in the above-described purpose. The signals input to the scanning lines may all be generated by one scanning line driver circuit, or may be generated by a plurality of scanning line drivers. It may be generated by the scan line driver circuit.

[0254] The thin film transistors to be disposed in the pixel portion of the liquid crystal display device are formed according to the first to fourth embodiments. The thin film transistors shown in the first to fourth embodiments are n-channel TFTs. Therefore, among the driver circuits, one that can be configured with n-channel TFTs is The pixel portion and the thin film transistor are formed on the same substrate.

[0255] In addition, in the light-emitting display device, the driver circuit may be configured with n-channel TFTs. A part of the driver circuit can be formed on the same substrate as the thin film transistor of the pixel portion. In addition, the signal line driver circuit and the scanning line driver circuit are formed of the n-channel TFs shown in the first to fourth embodiments. It is also possible to make it using only T.

[0256] In addition, in the peripheral driving circuits such as the protection circuits, gate drivers, and source drivers, In the case of a transistor, there is no need to transmit light. Therefore, the pixel part is made of transistors and capacitors. In the peripheral driving circuit section, light is transmitted through the transistor. It's not necessary.

[0257] FIG. 23(A) shows a driving section and a thin film transistor formed without using a multi-tone mask. The figure shows a thin film transistor in a pixel area. FIG. 23(B) shows a case where the transistor is formed using a multi-tone mask. 1 shows thin film transistors in a driving section and a pixel section.

[0258] When a thin film transistor is formed without using a multi-tone mask, the transistor in the driving section The gate electrode is formed of a conductive layer 104a having a higher conductivity than the conductive layer 102a. The conductive layer 110a having a higher conductivity than the conductive layer 108a is used as the drain electrode. In the driving section, the gate wiring is provided by the conductive layer 104a, and the source wiring is provided by the conductive layer 104b. The lines may be provided by conductive layer 110a.

[0259] When forming a thin film transistor using a multi-tone mask, the transistor in the driving section A gate electrode is provided with a laminated structure of a conductive layer 102a and a conductive layer 104a, and a source electrode is provided with a laminated structure of a conductive layer 102b and a conductive layer 104c. A conductive layer 108a and a conductive layer 110a are stacked on the conductive layer 108b as a drain electrode. It can be provided as a laminated structure of the insulating layer 8b and the conductive layer 110a.

[0260] In FIG. 23, the transistors in the pixel portion have the structure shown in the above embodiment mode. This can be done.

[0261] The above-mentioned driving circuit is not limited to liquid crystal display devices and light-emitting display devices, but may also be used in devices with switching elements and It may also be used in electronic paper, where electrically connected elements are used to drive electronic ink. Electronic paper is also called an electrophoretic display (electrophoretic display) and has the same properties as paper. It achieves the same readability, consumes less power than other display devices, and is thin and lightweight. It is possible.

[0262] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0263] (Embodiment 6) In this embodiment mode, a thin film transistor is used in a pixel portion and further in a driver circuit to provide a display function. A method for manufacturing a semiconductor device (also called a display device) using a thin film transistor will be described. The transistor and part or the whole of the driver circuit are formed on the same substrate as the pixel section, An on-panel can be formed.

[0264] The display device includes a display element. The display element may be a liquid crystal element (also called a liquid crystal display element), a light-emitting A light-emitting element (also called a light-emitting display element) can be used. A light-emitting element is a light-emitting element that emits light by applying a current or a voltage. This category includes elements whose brightness is controlled by a specific factor, such as inorganic EL (Electroluminescent) devices. Also, electronic ink, etc. A display medium in which the contrast changes due to an electrical effect, such as a liquid crystal display, can also be used.

[0265] The display device includes a panel in which a display element is sealed, and a controller for the panel. The display device further includes a module in which an IC or the like including the display device is mounted. In the process of manufacturing the display device, the element substrate corresponds to one form before the display device is completed. The element substrate includes a means for supplying a current to each of the plurality of pixels. Specifically, only the pixel electrodes of the display element may be formed, or the pixel electrodes and This is a state after forming a conductive film having the above structure and before etching to form a pixel electrode. is fine, and all forms apply.

[0266] In this specification, the term "display device" refers to an image display device, a display device, or an optical Also refers to connectors, such as FPC (Flexible Printed Circuit). inted circuit) or TAB (Tape Automated Bon ding tape or TCP (Tape Carrier Package) is used. Modules with printed wiring boards attached to the ends of TAB tape or TCP or the display element is mounted with an IC (integrated circuit) by the COG (Chip On Glass) method. The display device also includes all modules in which a display circuit (or other circuit) is directly mounted.

[0267] In this embodiment, a liquid crystal display device is shown as an example of the semiconductor device. The appearance and cross section of a liquid crystal display panel corresponding to this embodiment will be described with reference to FIG. The semiconductor layer is an In-Ga-Zn-O-based non-single crystal film formed on a first substrate 4001. The thin film transistors 4010 and 4011 and the liquid crystal element 4013 are highly reliable. FIG. 4 is a top view of a panel sealed between a second substrate 4006 and the panel by a sealant 4005. FIG. 24(B) corresponds to a cross-sectional view taken along line MN in FIG. 24(A1) and (A2).

[0268] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In this manner, a sealant 4005 is provided. A second substrate 4006 is provided on the path 4004. The line driver circuit 4004 is made up of a first substrate 4001, a sealant 4005, and a second substrate 4006. The liquid crystal layer 4008 is sealed together with the first substrate 4001. In a region different from the region surrounded by the material 4005, a single crystal is formed on a separately prepared substrate. A signal line driver circuit 4003 formed of a semiconductor film or a polycrystalline semiconductor film is mounted.

[0269] The method of connecting the separately formed drive circuit is not particularly limited, and may be a COG method, A wire bonding method, a TAB method, or the like can be used. FIG. 24(A2) shows an example of mounting a signal line driver circuit 4003 by the COG method. This is an example in which a signal line driver circuit 4003 is mounted by the TAB method.

[0270] In addition, a pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In FIG. 24B, the thin film transistor included in the pixel portion 4002 is A thin film transistor 4010 and a thin film transistor 401 included in a scanning line driver circuit 4004 The insulating layers 4020 and 4011 are formed on the thin film transistors 4010 and 4011. 21 is provided.

[0271] The thin film transistors 4010 and 4011 are made of In-Ga-Zn-O non-single crystal films as semiconductor layers. In this embodiment, a highly reliable thin film transistor including the above-mentioned The thin film transistors 4010 and 4011 are n-channel thin film transistors.

[0272] In addition, a pixel electrode layer 4030 of the liquid crystal element 4013 is connected to the thin film transistor 4010. The counter electrode layer 4031 of the liquid crystal element 4013 is electrically connected to the second substrate 40. 06. A pixel electrode layer 4030, a counter electrode layer 4031, and a liquid crystal layer 4008 are formed on the liquid crystal layer 4006. The overlapping portion corresponds to a liquid crystal element 4013. The electrode layer 4031 is provided with insulating layers 4032 and 4033 which function as alignment films. A liquid crystal layer 4008 is sandwiched between insulating layers 4032 and 4033 .

[0273] The first substrate 4001 and the second substrate 4006 may be made of glass or metal (typically, stainless steel). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, polyester film Alternatively, acrylic resin film can be used. Aluminum foil can also be used as a PVF film. A sheet having a structure sandwiched between films or polyester films can also be used.

[0274] Also, 4035 is a columnar spacer obtained by selectively etching the insulating film. In order to control the distance (cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031, A spherical spacer may be used. 1 is electrically connected to a common potential line provided on the same substrate as the thin film transistor 4010. The common connection portion is used to connect the counter electrode layer 4 to the conductive particles disposed between the pair of substrates. The conductive particles can electrically connect the sealing material 4 to the common potential line. Included in 005.

[0275] Alternatively, a liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of cholesteric liquid crystal is increased, the phase immediately transitions from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so it is necessary to improve the temperature range. In order to achieve this, a liquid crystal composition containing 5% by weight or more of a chiral agent is used for the liquid crystal layer 4008. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 10 μs to It is short at 100μs, has optical isotropy so no alignment treatment is required, and has small viewing angle dependency. stomach.

[0276] Note that the liquid crystal display device shown in this embodiment is an example of a transmission type liquid crystal display device. The device can be applied to both a reflective liquid crystal display device and a semi-transmissive liquid crystal display device.

[0277] In the liquid crystal display device shown in this embodiment mode, a polarizing plate is provided on the outer side (the viewing side) of the substrate. In this example, a colored layer and an electrode layer for use in a display element are provided on the side of the substrate in this order. The laminated structure of the polarizing plate and the colored layer is not limited to the embodiment, and the polarizing plate may be provided in the same manner. The thickness may be appropriately set depending on the material of the colored layer and the manufacturing process conditions. A light-shielding film that functions as a light shielding film may be provided.

[0278] In this embodiment, in order to reduce the surface unevenness of the thin film transistor, In order to improve the reliability of thin-film transistors, the The insulating layer 4020 and the insulating layer 4021 are formed on the insulating film 4021. is intended to prevent the intrusion of polluting impurities such as organic matter, metals, and water vapor suspended in the air. The protective film is preferably a silicon oxide film, a silicon nitride film, or the like, which is formed by sputtering. Silicon film, silicon oxynitride film, silicon oxynitride film, aluminum oxide film, aluminum nitride film Aluminum oxide film, aluminum oxynitride film, or aluminum oxide nitride film, or a single layer or a multilayer structure. In this embodiment, an example in which the protective film is formed by sputtering is shown, but the method is not particularly limited. The insulating layer 11 may be formed by various methods.

[0279] Here, an insulating layer 4020 having a laminated structure is formed as a protective film. The first layer of the silicon oxide film is formed by sputtering. By using a silicon film, the hysteresis of the aluminum film used as the source electrode layer and the drain electrode layer can be improved. It is effective in preventing lockup.

[0280] In addition, an insulating layer is formed as the second layer of the protective film. A silicon nitride film is formed by sputtering. A silicon nitride film is used as a protective film. When this happens, mobile ions such as sodium penetrate into the semiconductor region and change the electrical properties of the TFT. This can prevent the deterioration of the device.

[0281] After forming the protective film, the semiconductor layer may be annealed (at 300° C. to 400° C.). stomach.

[0282] In addition, an insulating layer 4021 is formed as a planarization insulating film. Heat-resistant organic compounds such as amide, acrylic, benzocyclobutene, polyamide, and epoxy. In addition to the above organic materials, low-k materials can be used. , siloxane resin, PSG (phosphorus glass), BPSG (borophosphorus glass), etc. are used. In addition, by stacking a plurality of insulating films made of these materials, an insulating layer can be formed. 4021 may be formed.

[0283] Siloxane-based resin is a type of Si-OS formed using siloxane-based materials as starting materials. The siloxane resin corresponds to a resin containing an i bond. Alternatively, the organic group may have a fluoro group. That's fine.

[0284] The method for forming the insulating layer 4021 is not particularly limited, and may be a sputtering method, an SOG method, or the like, depending on the material. , spin coating, dip coating, spray coating, droplet ejection method (inkjet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife When the insulating layer 4021 is formed using a material liquid, In the step of bonding, the semiconductor layer may be annealed (at 300° C. to 400° C.) at the same time. By combining the firing process of the edge layer 4021 with the annealing process of the semiconductor layer, a semiconductor device can be efficiently manufactured. It becomes possible to do so.

[0285] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide doped with silicon oxide A conductive material may be used.

[0286] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of a conductive polymer. The conductive composition may be used to form the conductive film. The formed pixel electrode preferably has a light transmittance of 70% or more at a wavelength of 550 nm. In addition, the resistivity of the conductive polymer contained in the conductive composition is 0.1 Ω cm or less. preferable.

[0287] As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or or a derivative thereof, or a copolymer of two or more of these.

[0288] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials are applied to 002 via FPC4018.

[0289] In this embodiment, the connection terminal electrode 4015 is connected to the pixel electrode layer 40 of the liquid crystal element 4013. The terminal electrode 4016 is formed from the same conductive film as the thin film transistors 4010 and 30. The source electrode layer and the drain electrode layer 11 are formed of the same conductive film.

[0290] The connection terminal electrode 4015 is connected to a terminal of the FPC 4018 via an anisotropic conductive film 4019. The electrodes are electrically connected to each other.

[0291] In FIG. 24, a signal line driver circuit 4003 is formed separately and mounted on a first substrate 4001. However, the present embodiment is not limited to this configuration. Alternatively, a part of the signal line driver circuit or a part of the scanning line driver circuit may be formed separately and mounted. Alternatively, the circuit board may be formed separately and mounted.

[0292] FIG. 25 shows a liquid crystal display module, which corresponds to one form of a semiconductor device, using a TFT substrate 2600. An example of the configuration is shown in FIG.

[0293] FIG. 25 shows an example of a liquid crystal display module, in which a TFT substrate 2600 and an opposing substrate 2601 are connected. The substrate 2602 is fixed to the substrate 2601 by a bonding material 2602, and a device layer 2603 including TFTs and the like and a liquid crystal layer 2604 are disposed between the substrate 2601 and the substrate 2602. A display element 2604 and a colored layer 2605 are provided to form a display area. is necessary for color display, and in the case of the RGB method, it corresponds to each color of red, green, and blue. A colored layer is provided corresponding to each pixel. On the outside, a polarizing plate 2606, a polarizing plate 2607, and a diffusion plate 2613 are arranged. It is composed of a cathode ray tube 2610 and a reflector 2611, and a circuit board 2612 is a flexible wiring board. A wiring board 2609 is connected to the wiring circuit section 2608 of the TFT board 2600, and the controller The LCD has external circuits such as a filter circuit and a power supply circuit. The layers may be laminated with a retardation plate interposed therebetween.

[0294] The LCD module is available in TN (Twisted Nematic) mode, IPS (In-plane Switching) mode, n-Plane-Switching mode, FFS (Fringe Field Switching) switching mode, MVA (Multi-domain Vertical A alignment) mode, PVA(Patterned Vertical Alignment) mode nment), ASM(Axially Symmetric aligned Mic) ro-cell) mode, OCB(Optical Compensated Bire) fringence mode, FLC (Ferroelectric Liquid C rystal) mode, AFLC (AntiFerroelectric Liquid Crystal) can be used.

[0295] Through the above steps, a highly reliable liquid crystal display device can be manufactured as a semiconductor device. .

[0296] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0297] (Embodiment 7) In this embodiment, electronic paper is shown as an example of a semiconductor device.

[0298] FIG. 26 shows an active matrix type electronic paper as an example of a semiconductor device. The thin film transistor 581 used in the body device may be the thin film transistor shown in any one of the first to third embodiments. It can be fabricated in the same way as a transistor.

[0299] The electronic paper in FIG. 26 is an example of a display device that uses the twisting ball display method. The spherical display method is an electrode layer that uses spherical particles painted in black and white as display elements. A potential difference is applied between the first electrode layer and the second electrode layer. This is a method for controlling the orientation of spherical particles and displaying information by generating a light-emitting diode.

[0300] A thin film transistor 581 provided on a substrate 580 is a thin film transistor of a bottom gate structure. The source electrode layer or the drain electrode layer is a first electrode layer 587 and an insulating layer 583, The first electrode is electrically connected to the second electrode through contact holes formed in the first electrode 84 and the second electrode 585. Between the layer 587 and the second electrode layer 588, there are black areas 590a and white areas 590b. and a spherical particle 589 having a cavity 594 therearound that is filled with liquid. The spherical particles 589 are surrounded by a filler 595 such as resin (see FIG. 26). In the LCD panel 26, the first electrode layer 587 corresponds to a pixel electrode, and the second electrode layer 588 corresponds to a common electrode. The second electrode layer 588 is provided over the same substrate as the thin film transistor 581. The common connection portion shown in the above embodiment is used to electrically connect a pair of A second electrode layer 588 provided on the substrate 596 is connected to the second electrode layer 588 via conductive particles disposed between the substrates. It is possible to electrically connect to a common potential line.

[0301] Also, instead of the twist ball, an electrophoretic element can be used. In that case, A transparent liquid is enclosed in a 10 cm diameter tube containing positively charged white particles and negatively charged black particles. Microcapsules of about 200 μm in size are used. Between the first electrode layer and the second electrode layer The microcapsules provided on the substrate are subjected to an electric field by the first electrode layer and the second electrode layer. When the light is turned on, the white particles and black particles move in opposite directions, allowing the display to be white or black. A display element that applies this principle is an electrophoretic display element, and is generally called electronic paper. Since electrophoretic display elements have a higher reflectivity than liquid crystal display elements, the auxiliary light It does not require a battery, consumes little power, and the display can be seen even in dimly lit places. In addition, even if power is not supplied to the display unit, the image once displayed can be retained. Therefore, it is possible to transmit the signal from the radio wave source to the semiconductor device with a display function (simply a display device, or a display The displayed image is preserved even if the device (also called a semiconductor device having the device) is moved away. It will be possible to keep

[0302] In this manner, electronic paper with high reliability as a semiconductor device can be manufactured.

[0303] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0304] (Embodiment 8) In this embodiment mode, a light-emitting display device is shown as an example of a semiconductor device. Here, a light-emitting element that uses electroluminescence is used as the element. Light-emitting devices that utilize fluoroluminescence are characterized by the fact that the luminescent material is either an organic compound or an inorganic compound. Generally, the former are called organic EL elements and the latter are called inorganic EL elements. It's been discovered.

[0305] In an organic EL element, electrons and holes are released from a pair of electrodes by applying a voltage to the light-emitting element. are injected into layers containing light-emitting organic compounds, causing a current to flow. The rears (electrons and holes) recombine to form an excited state in the light-emitting organic compound. When the excited state returns to the ground state, light is emitted. Such a light-emitting element is called a current-excitation type light-emitting element.

[0306] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements according to their element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor reaction that utilizes the donor and acceptor levels. Thin-film inorganic EL elements are made by sandwiching a light-emitting layer between dielectric layers. The structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner shell electron transition of metal ions. In this example, the light-emitting element is an organic EL element. do.

[0307] FIG. 27 shows an example of a pixel configuration to which digital time gray scale driving can be applied as an example of a semiconductor device. FIG.

[0308] The configuration of a pixel to which digital time gray scale driving can be applied and the operation of the pixel will be described. The channel formation region is made of an oxide semiconductor layer (In-Ga-Zn-O non-single crystal film). 1 shows an example in which two L-channel transistors are used in one pixel.

[0309] A pixel 6400 shown in FIG. 27A includes a switching transistor 6401, a driving transistor The switching element 6402 includes a light emitting element 6404 and a capacitor element 6403. The gate of the scanning transistor 6401 is connected to the scanning line 6406, and the first electrode (the source electrode and The second electrode (the source electrode and the drain electrode) is connected to a signal line 6405, and the second electrode (the source electrode and the drain electrode) is connected to a signal line 6405. The other of the gate electrodes is connected to the gate of the driving transistor 6402. The gate of the transistor 6402 is connected to a power supply line 6407 via a capacitor element 6403. The electrode is connected to a power line 6407, and the second electrode is the first electrode (pixel electrode) of the light emitting element 6404. The second electrode of the light emitting element 6404 corresponds to a common electrode 6408.

[0310] A low power supply potential is set to the second electrode (common electrode 6408) of the light emitting element 6404. Note that the low power supply potential is a low power supply potential with respect to the high power supply potential set to the power supply line 6407. Potential < High power supply potential. For example, GND, 0V, etc. are set as low power supply potential. The potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 6404. In order to make the light emitting element 6404 emit light by passing a current through the light emitting element 6404, a high power supply potential and the low power supply potential is set to be equal to or higher than the forward threshold voltage of the light emitting element 6404. Each potential is set.

[0311] However, this is not limiting, and a high power supply potential may be set to the second electrode and a low power supply potential may be set to the power supply line 6407. may be set.

[0312] The capacitor 6403 is omitted by substituting the gate capacitance of the driving transistor 6402. It is also possible to set the gate capacitance of the driving transistor 6402 as follows: A capacitance may be formed between the gate electrode and the second electrode.

[0313] In the case of a voltage input voltage driving method, the gate of the driving transistor 6402 is The driving transistor 6402 is in two states, either fully on or fully off. A video signal is inputted, that is, the driving transistor 6402 is operated in a linear region. In order to operate the driving transistor 6402 in a linear region, the voltage of the power supply line 6407 must be higher than that of the driving transistor 6402. A high voltage is applied to the gate of the driving transistor 6402. A voltage equal to or higher than (power supply line voltage + Vth of the driving transistor 6402) is applied.

[0314] In addition, when analog gray scale driving is performed instead of digital time gray scale driving, the input of the signal is different. By doing so, the same pixel configuration as in FIG. 27 can be used.

[0315] In the case of performing analog gradation driving, a light emitting element 6404 is connected to the gate of a driving transistor 6402. A voltage equal to or higher than the forward voltage of the light emitting element 6401 and the Vth of the driving transistor 6402 is applied. The forward voltage in 04 refers to the voltage required to achieve the desired brightness, and should be at least 100% forward voltage. In addition, the video transistor 6402 is designed to operate in the saturation region. By inputting an optical signal, a current can be passed through the light emitting element 6404. In order to operate the transistor 6402 in the saturation region, the potential of the power supply line 6407 is The gate potential of the light emitting element 6402 is set higher than that of the gate of the transistor 6403. Analog gradation drive can be performed by passing a current corresponding to a video signal through 6404.

[0316] Note that the pixel configuration shown in this embodiment is not limited to this. New switches, resistors, capacitors, transistors, logic circuits, etc. may be added. For example, the pixel 6420 shown in FIG. 27B may have the following structure. A switching transistor 6401, a driving transistor 6402, and a light-emitting element 6404 and a capacitor element 6423. The switching transistor 6401 has a gate The first electrode (one of the source electrode and the drain electrode) is connected to the signal line 64 05, and the second electrode (the other of the source electrode and the drain electrode) of the driving transistor The gate of the driving transistor 6402 is connected to the gate of the capacitance element The first electrode (pixel electrode) of the light-emitting element 6404 is connected to the first electrode (pixel electrode) via 6423. The second electrode is connected to a wiring 6426 that applies a pulse voltage, and the second electrode is connected to a first electrode of the light emitting element 6404. The second electrode of the light emitting element 6404 corresponds to the common electrode 6408. In this configuration, a switch, a resistor, a capacitor, a transistor, or a logic circuit etc. may be added.

[0317] Next, the configuration of the light-emitting element will be described with reference to FIG. 28. Here, the driving TFT is The cross-sectional structure of a pixel will be described using the example of the type shown in Figures 28(A), (B), and (C). The driving TFTs used in the semiconductor device are TFTs 7001, 7011, and 7021. It can be manufactured in the same manner as the thin film transistor shown in the embodiment, and is an In-Ga-Zn-O system non-single crystal. The thin film transistor is highly reliable and contains a crystal film as a semiconductor layer.

[0318] The light emitting element only needs to have at least one of the anode and cathode transparent in order to extract light. Then, a thin film transistor and a light emitting element are formed on the substrate, and light is taken from the surface opposite to the substrate. Top emission, bottom emission, and side emission. There are light-emitting elements with a double-sided emission structure that emits light from the side of the pixel. The present invention can also be applied to optical elements.

[0319] A light emitting element having a top emission structure will be described with reference to FIG.

[0320] In FIG. 28A, a TFT 7001 which is a driving TFT is an n-type TFT, and a light emitting element 7002 emits light. FIG. 28(A) shows a cross-sectional view of a pixel when the light incident thereon exits to the anode 7005 side. A cathode 7003 of a light emitting element 7002 and a TFT 7001 which is a driving TFT are electrically connected. A light-emitting layer 7004 and an anode 7005 are laminated in this order on a cathode 7003. 7003 uses various materials as long as they have a small work function and are conductive films that reflect light. For example, Ca, Al, CaF, MgAg, AlLi, etc. are preferable. The light-emitting layer 7004 may be composed of a single layer or a plurality of layers may be laminated. When the cathode 7003 is composed of multiple layers, the electron injection layer 7004 is disposed on the cathode 7003. The layers are laminated in this order: electron transport layer, light emitting layer, hole transport layer, and hole injection layer. It is not necessary to provide all of the anodes. The anode 7005 is made of a conductive material that transmits light. For example, indium oxide containing tungsten oxide, indium oxide containing tungsten oxide Indium zinc oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide Oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, oxide A light-transmitting conductive film such as indium tin oxide doped with indium may be used.

[0321] The region where the light-emitting layer 7004 is sandwiched between the cathode 7003 and the anode 7005 constitutes the light-emitting element 7002. In the case of the pixel shown in FIG. 28(A), the light emitted from the light emitting element 7002 is The light is emitted toward the anode 7005 as indicated by the mark.

[0322] In the above configuration, the thickness of the light-emitting layer 7004 is adjusted to form a microcavity. By adopting a microcavity structure, color purity can be improved. In addition, each of the light-emitting layers 7004 can emit a different color (for example, RGB). In this case, the thickness of the light-emitting layer 7004 is adjusted for each color to form a microcavity structure. is preferred.

[0323] In the above configuration, an insulating film such as silicon oxide or silicon nitride is provided on the anode 7005. This can suppress deterioration of the light-emitting layer.

[0324] Next, a light emitting element having a bottom emission structure will be described with reference to FIG. When 011 is an n-type light emitting element and light emitted from the light emitting element 7012 is emitted to the cathode 7013 side, FIG. 28B shows a cross-sectional view of a pixel. A cathode 7013 of a light-emitting element 7012 is formed on a light-transmitting conductive film 7017. A light-emitting layer 7014 and an anode 7015 are laminated in this order on the cathode 7013. When the anode 15 has a light-transmitting property, a shielding layer for reflecting or blocking light is provided so as to cover the anode. The cathode 7013 may have a film 7016 formed thereon, as in the case of FIG. Various conductive materials with small thermal coefficients can be used. However, the thickness of the material should be The thickness is set to a level that allows light to pass through (preferably, about 5 nm to 30 nm). For example, a 20 nm film An aluminum film having a thickness of 700 nm can be used as the cathode 7013. 014, like FIG. 28(A), may be composed of a single layer, but may also be composed of multiple layers stacked together. The anode 7015 does not need to transmit light, but as shown in FIG. As with 28(A), it can be formed using a conductive material having light-transmitting properties. The shielding film 7016 may be made of, for example, a metal that reflects light, but is not limited to a metal film. For example, a resin containing a black pigment may be used.

[0325] The region where the light-emitting layer 7014 is sandwiched between the cathode 7013 and the anode 7015 is the light-emitting element 7012. In the case of the pixel shown in FIG. 28B, the light emitted from the light-emitting element 7012 corresponds to The light is emitted toward the cathode 7013 as shown by the arrow.

[0326] Next, a light emitting element having a dual emission structure will be described with reference to FIG. In this example, a conductive film 7027 having a light-transmitting property and electrically connected to the driving TFT 7021 is formed on the substrate 7022. A cathode 7023 of the light-emitting element 7022 is formed, and a light-emitting layer 7024 is formed on the cathode 7023. The anode 7025 is laminated in order. The cathode 7023 is, as in the case of FIG. Various conductive materials with small thermal coefficients can be used. However, the thickness of the material should be For example, the cathode 7023 is made of Al having a thickness of 20 nm. The light-emitting layer 7024 can be formed of a single layer, as in FIG. The anode 70 may be configured as a single layer or as a laminate of multiple layers. 25 is formed using a conductive material having a light transmitting property, similar to FIG. It is possible.

[0327] The overlapping portion of the cathode 7023, the light-emitting layer 7024, and the anode 7025 constitutes the light-emitting element 70. In the case of the pixel shown in FIG. 28C, the light emitted from the light emitting element 7022 is is emitted toward both the anode 7025 side and the cathode 7023 side as indicated by the arrows.

[0328] Although the organic EL element has been described as the light-emitting element here, inorganic EL elements can also be used as the light-emitting element. It is also possible to provide an L element.

[0329] In this embodiment, a thin film transistor (driving TFT) that controls driving of a light emitting element is Although an example in which the light-emitting element is electrically connected has been shown, the current between the driving TFT and the light-emitting element is A control TFT may be connected.

[0330] Note that the semiconductor device described in this embodiment mode is not limited to the configuration shown in FIG. Many variations are possible.

[0331] Next, the appearance and structure of a light-emitting display panel (also called a light-emitting panel) which corresponds to one embodiment of a semiconductor device will be described. The cross section will be described with reference to FIG. 29. FIG. 29(A) shows a cross section of a semiconductor device formed on a first substrate 4051. A highly reliable thin film transistor containing a non-single crystal In-Ga-Zn-O-based semiconductor layer The resistors 4509 and 4510 and the light emitting element 4511 are sealed between the second substrate 4506. FIG. 29(B) is a top view of the panel sealed with a material 4505. This corresponds to the cross-sectional view in HI.

[0332] A pixel portion 4502, a signal line driver circuit 4503a, and a signal line driver circuit 4504 are provided on a first substrate 4501. A sealant 4505 is formed to surround the gate driver circuits 4504a and 4504b. In addition, a pixel portion 4502, signal line driver circuits 4503a and 4503b, and A second substrate 4506 is provided on the scanning line driver circuits 4504a and 4504b. The pixel portion 4502, the signal line driver circuits 4503a and 4503b, and the scanning line driver circuit 45 4504a and 4504b are a first substrate 4501, a sealant 4505, and a second substrate 4506. The filling material 4507 is sealed with the sealing material 4507. Highly sealed protective film with little outgassing (lamination film, UV curable resin film) It is preferable to package (enclose) the package in a material such as a film or a cover material.

[0333] A pixel portion 4502, a signal line driver circuit 4503a, and a fourth 503b and the scanning line driver circuits 4504a and 4504b each have a plurality of thin film transistors. In FIG. 29B, a thin film transistor 4510 included in a pixel portion 4502 and a signal 45, a thin film transistor 4509 included in a line driver circuit 4503a is illustrated.

[0334] The thin film transistors 4509 and 4510 can have the structure described in the above embodiment modes. Here, the thin film transistors 4509 and 4510 are In-Ga-Zn-O based non-single crystal A highly reliable thin film transistor including a crystal film as a semiconductor layer can be applied. In this embodiment, the thin film transistors 4509 and 4510 are n-channel thin film transistors. It is.

[0335] In addition, 4511 corresponds to a light-emitting element, and a first electrode which is a pixel electrode of the light-emitting element 4511 is The layer 4517 is electrically connected to the source electrode layer or the drain electrode layer of the thin film transistor 4510. The light-emitting element 4511 is configured as a first electrode layer 4517, an electroluminescent layer The first electrode layer 4512 and the second electrode layer 4513 are stacked in a stacked structure. The light emitting element 4511 is not rotated in accordance with the direction of the light to be extracted from the light emitting element 4511. The configuration can be changed as appropriate.

[0336] The partition 4520 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. In particular, a photosensitive material is used to form an opening on the first electrode layer 4517, and the sidewall of the opening It is preferable that the inclined surface is formed so as to have a continuous curvature.

[0337] The electroluminescent layer 4512 may be composed of a single layer or a plurality of layers may be laminated. It doesn't matter whether it is done or not.

[0338] In order to prevent oxygen, hydrogen, moisture, carbon dioxide, and the like from entering the light-emitting element 4511, the second electrode layer A protective film may be formed on the partition wall 4513 and the partition wall 4520. The protective film may be formed of silicon nitride. It is possible to form a silicon oxide nitride film, a DLC film, etc.

[0339] In addition, signal line driver circuits 4503a and 4503b, scanning line driver circuits 4504a and 4504b Various signals and potentials applied to the pixel portion 4502 are It is supplied by b.

[0340] In this embodiment, the connection terminal electrode 4515 is connected to the first electrode layer 4 of the light emitting element 4511. The terminal electrode 4516 is formed from the same conductive film as the thin film transistor 4509 and the The source electrode layer and the drain electrode layer 510 are formed from the same conductive film.

[0341] The connection terminal electrode 4515 is connected to the terminal of the FPC 4518a via the anisotropic conductive film 4519. The electrodes are electrically connected to each other.

[0342] The substrate located in the direction in which light from the light emitting element 4511 is extracted must be light-transmitting. In this case, a glass plate, a plastic plate, a polyester film or an acrylic film A light-transmitting material such as tungsten is used.

[0343] In addition, filler 4507 can be inert gas such as nitrogen or argon, or ultraviolet-curing resin. It can be made of oil or thermosetting resin, and can be made of PVC (polyvinyl chloride), acrylic, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV A (ethylene vinyl acetate) can be used. In this embodiment, nitrogen is used as the filler. The substance was used.

[0344] If necessary, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate) may be provided on the light-emitting surface of the light-emitting element. Optical films such as retardation plates (λ / 4 plates, λ / 2 plates) and color filters may be provided as appropriate. In addition, the polarizing plate or the circular polarizing plate may be provided with an anti-reflection film. Anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0345] The signal line driver circuits 4503a and 4503b and the scanning line driver circuits 4504a and 4504b are A driving circuit formed of a single crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate Also, only the signal line driver circuit, or a part of the signal line driver circuit, or the scanning line driver circuit may be mounted. Only the path or only a part of the path may be separately formed and mounted. In this embodiment, the structure shown in FIG. Not limited.

[0346] Through the above steps, a highly reliable light-emitting display device (display panel) can be manufactured as a semiconductor device. It is possible.

[0347] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0348] (Embodiment 9) The semiconductor device can be used as electronic paper. It can be used in any electronic device in any field. For example, Using the per, electronic books (e-books), posters, in-car advertisements on trains and other vehicles, credit cards, etc. The present invention can be applied to the display of various cards such as credit cards. Shown in Figures 30 and 31.

[0349] FIG. 30(A) shows a poster 2631 made of electronic paper. When the advertisements are printed on paper, they are replaced manually. You can change the display of your ad in a short time. Also, the display is stable and the image does not collapse. The poster may be configured to transmit and receive information wirelessly.

[0350] FIG. 30B shows an advertisement 2632 on a train or other vehicle. When using printed paper, advertisements are replaced manually, but with electronic paper, This allows you to change the display of your ads in a short time without a lot of manual labor. The poster is designed to transmit and receive information wirelessly. It is also possible to use the following.

[0351] FIG. 31 also shows an example of an electronic book 2700. For example, the electronic book 2700 is The device is made up of two housings, a housing 2701 and a housing 2703. The body 2703 is integrated with a shaft portion 2711, and the opening and closing movement is performed around the shaft portion 2711. This configuration allows the device to operate like a paper book. It becomes.

[0352] A display unit 2705 is incorporated in the housing 2701, and a display unit 2707 is incorporated in the housing 2703. The display unit 2705 and the display unit 2707 are configured to display a continuous screen. Alternatively, a different screen may be displayed. For example, a text is displayed on the right display (display 2705 in FIG. 31) and An image can be displayed on the display unit 2707 in FIG.

[0353] FIG. 31 shows an example in which the housing 2701 is provided with an operation unit. 701, a power supply 2721, operation keys 2723, a speaker 2725, etc. The operation keys 2723 can be used to turn pages. The configuration may include a touch panel, a touch screen, a pointing device, etc. On the side, there are external connection terminals (earphone terminal, USB terminal, or AC adapter and USB A configuration including a terminal that can be connected to various cables such as a cable, a recording medium insertion section, etc. Furthermore, the electronic book 2700 may be configured to have a function as an electronic dictionary. This is also fine.

[0354] The electronic book 2700 may be configured to transmit and receive information wirelessly. The desired book data can be purchased and downloaded from the electronic book server. is also possible.

[0355] (Embodiment 10) In this embodiment, a pixel configuration and pixel operation that can be applied to a liquid crystal display device will be described. In the present embodiment, the liquid crystal element is operated in a Twist (TN) mode. ed Nematic mode, IPS (In-Plane-Switching) mode FFS (Fringe Field Switching) mode, MVA (Multi-Voltage Amplification) mode ti-domain Vertical Alignment) mode, PVA(Pat terned Vertical Alignment), ASM(Axially S ymmetric aligned Micro-cell) mode, OCB(Opti cal Compensated Birefringence mode, FLC (Fe rroelectric Liquid Crystal) mode, AFLC (Anti Ferroelectric Liquid Crystals, etc. can be used. do.

[0356] FIG. 41A is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel circuit 5080 includes a transistor 5081, a liquid crystal element 5082, and a capacitor element 5083. The gate of the transistor 5081 is electrically connected to the wiring 5085. The first terminal of the transistor 5081 is electrically connected to the wiring 5084. The first terminal of the liquid crystal element 5082 is electrically connected to the wiring. The first terminal of the capacitor 5083 is electrically connected to the first terminal of the liquid crystal element 5082. The second terminal of the capacitor 5083 is electrically connected to the wiring 5086. The first terminal of a transistor is either the source or the drain. The second terminal of the transistor is the other of the source and drain. If the first terminal of a transistor is the source, then the second terminal of the transistor is the drain. Similarly, if the first terminal of the transistor is the drain, then the second terminal of the transistor is the is the source.

[0357] The wiring 5084 can function as a signal line. The signal line is input from the outside of the pixel. The wiring 5085 is a wiring for transmitting the signal voltage to the pixel 5080. The scan line is used to control the on / off of the transistor 5081. The wiring 5086 can function as a capacitance line. This is a wiring for applying a predetermined voltage to the second terminal of the transistor 5083. The capacitor 5083 can function as a storage capacitor. The storage capacitor can store the signal voltage even when the switch is off. The wiring 5087 is a capacitor for continuously adding to the capacitor 082. The counter electrode can be used to apply a predetermined voltage to the second terminal of the liquid crystal element 5082. However, the functions that each wiring can have are not limited to these. For example, by changing the voltage applied to the capacitance line, The voltage applied to the liquid crystal element can also be adjusted. Since the transistor 5081 only needs to function as a P-channel type, the polarity of the transistor 5081 may be a P-channel type. Alternatively, the transistor may be of an N-channel type.

[0358] FIG. 41(B) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. 41(A) in which the wiring 5087 is omitted. The second terminal of the liquid crystal element 5082 and the second terminal of the capacitance element 5083 are electrically connected. The pixel configuration is the same as that shown in FIG. 41(A), except that the pixel is connected to the The pixel configuration example shown in FIG. 41(B) is particularly suitable for liquid crystal elements in a lateral electric field mode (IP This is applicable when the liquid crystal element is horizontally shifted (including S mode and FFS mode). In the field mode, the second terminal of the liquid crystal element 5082 and the second terminal of the capacitor element 5083 are Since they can be formed on the same substrate, the second terminal of the liquid crystal element 5082 and the capacitor element 5 This is because it is easy to electrically connect the second terminal of the junction box 083 to the second terminal of the junction box 083. By using the pixel configuration as shown in FIG. 1, the wiring 5087 can be omitted, and the manufacturing process can be simplified. This allows the manufacturing cost to be reduced.

[0359] The pixel configuration shown in FIG. 41(A) or FIG. 41(B) is arranged in a matrix. In this way, a display section of a liquid crystal display device is formed, and various images can be displayed. FIG. 41C shows a pixel arrangement in which a plurality of pixel configurations shown in FIG. 41A are arranged in a matrix. The circuit configuration shown in FIG. 41C is a diagram showing a circuit configuration in the case where the display unit has The figure shows four pixels extracted from the multiple pixels. The pixel located at the position (j is a natural number) is represented as pixel 5080_i,j. The wiring 5084_i, the wiring 5085_j, and the wiring 5086_j are electrically connected to Similarly, for the pixel 5080_i+1,j, a wiring 5084_i+1, a wiring 5085_j is electrically connected to the wiring 5086_j. For +1, wire 5084_i, wire 5085_j+1, wire 5086_j+1 and Similarly, for the pixel 5080_i+1, j+1, a wiring 5084_ i+1, a wiring 5085_j+1, and a wiring 5086_j+1. A wiring can be shared by multiple pixels in the same column or row. In the pixel configuration shown in FIG. 41(C), the wiring 5087 is a counter electrode. Since the elements are common, the notation for wiring 5087 using natural numbers i or j is It is also possible to use the pixel configuration shown in FIG. Therefore, even if the wiring 5087 is shown in the configuration, the wiring 5087 is not essential, and other wiring It may be omitted by being shared with a line, etc.

[0360] The pixel configuration shown in FIG. 41(C) can be driven in various ways. The liquid crystal display is driven by a method called flow driving, which prevents deterioration of the liquid crystal element (burn-in). FIG. 41(D) shows a case where dot inversion driving, which is one of the AC driving methods, is used. When the pixel configuration shown in FIG. 41(C) is used, the timing of the voltage applied to each wiring is FIG. 1 is a diagram showing a pixel timing chart of a pixel in which dot inversion driving is performed and AC driving is performed. This can suppress the flicker that is visible when a light source is turned on.

[0361] In the pixel configuration shown in FIG. 41C, The switch in is in the selected state (on state) during the j-th gate selection period in one frame period. In the other period, it is in the non-selected state (off state). After the j+1-th gate selection period, the j+1-th gate selection period is provided. In this manner, sequential scanning is performed. As a result, all pixels are selected in sequence within one frame period. In the timing chart, when the voltage is in a high state (high level), The switch is in the selected state, and the voltage is low (low level) to deselect the switch. Note that this is the case when the transistors in each pixel are N-channel type, and not P-channel type. When a N-channel transistor is used, the relationship between the voltage and the selection state is different from that of the N-channel type. The opposite is true.

[0362] In the timing chart shown in FIG. 41(D), the jth pulse in the kth frame (k is a natural number) During the gate selection period, a positive signal voltage is applied to the wiring 5084_i used as a signal line. A negative signal voltage is applied to the wiring 5084_i+1. In the j+1-th gate selection period, a negative signal voltage is applied to the wiring 5084_i, A positive signal voltage is applied to 084_i+1. After that, each signal line is In each selection period, a signal with the polarity inverted is added alternately. As a result, in the kth frame, A positive signal voltage is applied to the pixel 5080_i,j, and a negative signal voltage is applied to the pixel 5080_i+1,j. A negative signal voltage is applied to pixel 5080_i, j+1, and a positive signal voltage is applied to pixel 5080_i+1, j+1. In the k+1-th frame, the signal voltages are added as follows: In each pixel, a signal voltage of the opposite polarity to the signal voltage written in the kth frame is written. As a result, in the k+1th frame, the pixel 5080_i,j A negative signal voltage is applied to pixel 5080_i+1,j, a positive signal voltage is applied to pixel 5080_i,j A positive signal voltage is applied to pixel 5080_i+1,j+1, and a negative signal voltage is applied to pixel 5080_i+1,j+1. In this way, adjacent pixels in the same frame have different polarities. A signal voltage having a specific polarity is applied to each pixel, and a signal voltage The dot inversion driving method inverts the polarity of the liquid crystal. This is visible when the entire or part of the displayed image is uniform while suppressing deterioration of the element. Flicker can be reduced. The voltage applied to all the wirings 5086 including the wiring 5086 can be a constant voltage. The timing chart for the signal voltage of line 5084 only indicates the polarity. In this case, various signal voltage values ​​can be used for the displayed polarity. Although the polarity is inverted for each pixel, the present invention is not limited to this. For example, the polarity of the signal voltage written every two gate selection periods can be reversed. By reversing the polarity, it is possible to reduce the power consumption required to write the signal voltage. In addition, the polarity can be inverted for each column (source line inversion) or for each row. It is also possible to invert the polarity (gate line inversion)

[0363] In addition, the second terminal of the capacitor 5083 in the pixel 5080 is A constant voltage is sufficient. Here, the voltage applied to the wiring 5085 used as the scanning line is The voltage applied is low for most of the frame period, and a nearly constant voltage is applied. Therefore, the second terminal of the capacitor element 5083 in the pixel 5080 is connected to the wiring 5 FIG. 41(E) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel configuration shown in FIG. 41(E) has a wiring 5086 is omitted, and the second terminal of the capacitance element 5083 in the pixel 5080 and the The wiring 5085 in the row is electrically connected to the In the range shown in FIG. 41(E), the pixel 5080_i,j+1 and the pixel The second terminal of the capacitance element 5083 in 5080_i+1, j+1 is connected to the wiring 5085_j. In this manner, the second terminal of the capacitance element 5083 in the pixel 5080 and By electrically connecting the wiring 5085 in the previous row, the wiring 5086 is omitted. Since the second terminal of the capacitor 5083 can be connected to the The destination may be the wiring 5085 in another row, not just the wiring 5085 in the previous row. The driving method of the pixel configuration shown in FIG. 41(E) is the same as that of the pixel configuration shown in FIG. The same movement method can be used.

[0364] The capacitor 5083 and the wiring electrically connected to the second terminal of the capacitor 5083 are By using this, the voltage applied to the wiring 5084 used as a signal line can be reduced. The pixel configuration and driving method in this case will be described with reference to FIG. 41(F) and FIG. 41(G). The pixel configuration shown in FIG. 41(F) has a wiring 5 compared to the pixel configuration shown in FIG. 086 is provided for each pixel column, and the second The feature of this type is that the electrical connection to the terminals is made alternately between adjacent pixels. The two wires 5086 are referred to as wire 5086-1 and wire 5086-2, respectively. Specifically, in the range shown in FIG. , j, the second terminal of the capacitance element 5083 is electrically connected to the wiring 5086-1_j. The second terminal of the capacitance element 5083 in the pixel 5080_i+1,j is connected to the wiring 5086-2 _j, and the second terminal of the capacitance element 5083 in the pixel 5080_i,j+1 The element is electrically connected to the wiring 5086-2_j+1 and is connected to the pixel 5080_i+1, j+1. A second terminal of the capacitor 5083 in the .

[0365] For example, as shown in FIG. 41G, in the k-th frame, pixel 5080_i, When a positive signal voltage is written to j, the wiring 5086-1_j is the jth gate selection During the jth gate selection period, the signal is kept at a low level, and after the jth gate selection period ends, the signal is changed to a high level. Then, it maintains the high level for one frame period, and in the k+1th frame In the jth gate selection period, a signal voltage of negative polarity is written, and then the signal voltage is changed to a low level. In this way, after a signal voltage of positive polarity is written to the pixel, the second By changing the voltage of the wiring electrically connected to the terminal in the positive direction, This allows the voltage written to the pixel to be changed in the positive direction by a specified amount. This reduces the power consumption required for signal writing. In addition, when a signal voltage of negative polarity is written in the j-th gate selection period, After a signal voltage of negative polarity is written to the pixel, the second terminal of the capacitance element 5083 is electrically connected to the By changing the voltage of the wiring connected to the liquid crystal display in the negative direction, the voltage applied to the liquid crystal element is Since the voltage can be changed by a given amount in the negative direction, the pixel The signal voltage to be written can be made small. The electrically connected wiring is connected to the same row of the same frame when a positive polarity signal voltage is applied. The pixels to which a positive polarity signal voltage is applied have different wiring. FIG. 41(F) shows a case where a signal voltage of positive polarity is written in the k-th frame. A wiring 5086-1 is electrically connected to the pixel, and a signal voltage of negative polarity is applied in the k-th frame. In this example, the wiring 5086-2 is electrically connected to the pixel to which the voltage is written. This is just one example. For example, a pixel to which a signal voltage of a positive polarity is written and a pixel to which a signal voltage of a negative polarity is written In the case of a driving method in which pixels to which light is written appear every two pixels, the wiring 5086-1 and Accordingly, the electrical connection of the wiring 5086-2 is also performed alternately every two pixels. It is preferable that the signal voltage of the same polarity is written to all pixels in one row (gain In this case, one wiring 5086 may be provided per row. That is, even in the pixel configuration shown in FIG. 41(C), the same applies when FIGS. 41(F) and 41(G) are used. As explained above, a driving method for reducing the signal voltage written to the pixel can be used. do.

[0366] Next, the liquid crystal element is a vertical alignment (VA) type, typically represented by MVA mode or PVA mode. A pixel configuration and a driving method thereof that are particularly preferable in the VA mode will be described. This LCD has many advantages, such as no rubbing process required during manufacturing, little light leakage during black display, and low driving voltage. However, the image quality deteriorates when the screen is viewed at an angle (the viewing angle is narrow). In order to widen the viewing angle in the VA mode, the following problems are solved: As shown in (B), a pixel configuration having multiple sub-pixels in one pixel is used. In the pixel configuration shown in FIG. 42(A) and FIG. 42(B), the pixel 5080 is 5 shows an example of a case in which the subpixels are two (subpixel 5080-1 and subpixel 5080-2). The number of sub-pixels in one pixel is not limited to two, and various numbers of sub-pixels can be used. The larger the number of sub-pixels, the wider the viewing angle can be. The sub-pixels can have the same circuit configuration. In this case, all the sub-pixels are shown in FIG. The circuit configuration of the first subpixel 5080-1 is the same as that shown in FIG. A transistor 5081-1, a liquid crystal element 5082-1, and a capacitor element 5083-1 The connections of each are based on the circuit configuration shown in FIG. The second subpixel 5080-2 includes a transistor 5081-2, a liquid crystal element 5082-2, and a capacitor The circuit configuration shown in FIG. 41(A) is that the elements 5083-2 are included and the connections are as shown in FIG. shall be governed by the same.

[0367] The pixel configuration shown in FIG. 42(A) is used as a scanning line for two sub-pixels that make up one pixel. The two wirings 5085 (wiring 5085-1 and wiring 5085-2) are used as signal lines. The wiring 5084 is used as a capacitor line, and the wiring 5086 is used as a capacitor line. In this way, the signal line and the capacitance line are shared by two sub-pixels, The throughput can be improved and the signal line driver circuit can be simplified. This reduces manufacturing costs and the number of connections between the liquid crystal panel and the driver IC. The pixel configuration shown in FIG. 42(B) is a pixel configuration in which two sub-pixels make up one pixel. For each pixel, there is one wiring 5085 used as a scanning line, and one wiring 50 The wiring 5084 has two wirings 5084 (wiring 5084-1 and wiring 5084-2) and is used as a capacitance line. In this way, the scanning lines and the capacitance lines are divided into two sub-pixels. By sharing the same pixel, the aperture ratio can be improved and the total number of scanning lines can be reduced. This allows the gate line selection period to be sufficiently long even in high-resolution LCD panels. It is possible to lengthen the length so that an appropriate signal voltage can be written to each pixel.

[0368] 42(C) and 42(D) show the pixel configuration shown in FIG. 42(B) in which the liquid crystal element is This is an example in which the electrical connection state of each element is represented diagrammatically in terms of the shape of a pixel electrode. In FIG. 42(C) and FIG. 42(D), the electrode 5088-1 represents the first pixel electrode, The electrode 5088-2 represents the second pixel electrode. The electrode 5088-1 corresponds to the first terminal of the liquid crystal element 5082-1 ​​in FIG. The second pixel electrode 5088-2 is connected to the first terminal of the liquid crystal element 5082-2 in FIG. That is, the first pixel electrode 5088-1 corresponds to the source of the transistor 5081-1. or one of the drains, and the second pixel electrode 5088-2 is electrically connected to the 5081-2 is electrically connected to either the source or drain of the transistor 5081-2. In the second embodiment, the connection relationship between the pixel electrodes and the transistors is reversed. 088-1 is electrically connected to one of the source and drain of the transistor 5081-2. The second pixel electrode 5088-2 is connected to the source or drain of the transistor 5081-1. It is assumed that the terminal is electrically connected to one of the terminals.

[0369] The pixel configurations shown in FIG. 42(C) and FIG. 42(D) are arranged alternately in a matrix. By doing so, a special effect can be obtained. An example is shown in FIG. 48(A) and FIG. 48(B). The pixel configuration shown in FIG. The part corresponding to pixel 5080_i,j and pixel 5080_i+1,j+1 is shown in FIG. The configuration shown in FIG. 1 is a block diagram of a pixel 5080_i+1,j and a pixel 5080_i,j+1. In this configuration, the part shown in FIG. When driven as shown in the timing chart, during the jth gate selection period of the kth frame, The first pixel electrode of the pixel 5080_i,j and the second pixel electrode of the pixel 5080_i+1,j A signal voltage of positive polarity is written, and the second pixel electrode of the pixel 5080_i,j and the pixel A signal voltage of negative polarity is written to the first pixel electrode of 80_i+1,j. In the j+1-th gate selection period of the frame, the second pixel electrode and A positive signal voltage is written to the first pixel electrode of the pixel 5080_i+1,j+1. The first pixel electrode of the pixel 5080_i,j+1 and the second pixel electrode of the pixel 5080_i+1,j+1 A signal voltage of negative polarity is written to the pixel electrode. In the (k+1)th frame, In this way, the polarity of the signal voltage is inverted in the pixel configuration including the sub-pixel. This realizes a drive equivalent to dot inversion drive, while changing the polarity of the voltage applied to the signal line by one frame. Since the same value can be set for the entire period, the power consumption required for writing the signal voltage to the pixel can be reduced. The force required for the wiring 5086_j and the wiring 5086_j+1 can be significantly reduced. The voltage applied to all wirings 5086 including the wiring 5082 can be a constant voltage.

[0370] Furthermore, by using the pixel configuration and the driving method thereof shown in FIG. 48(C) and FIG. 48(D), The magnitude of the signal voltage written to the pixel can be reduced. The capacitance lines electrically connected to the sub-pixels of the pixel are different for each sub-pixel. That is, the pixel configuration and the driving method thereof shown in FIG. 48(A) and FIG. 48(B) are used. Therefore, for sub-pixels to which the same polarity is written in the same frame, the capacitance Sub-pixels that share a common line and have different polarities written in the same frame are Then, when writing to each row is completed, The voltage of the positive polarity signal voltage is written to the subpixel in the positive direction, and the voltage of the negative polarity signal voltage is written to the In the subpixel where a signal voltage is written, the signal voltage written to the pixel is changed in the negative direction. Specifically, the wiring 5086 used as the capacitance line is arranged in each row. The first pixel of pixel 5080_i,j is connected to two lines (line 5086-1 and line 5086-2). The electrode and the wiring 5086-1_j are electrically connected through a capacitor. The second pixel electrode of pixel _i, j is electrically connected to the wiring 5086-2_j via a capacitance element. The first pixel electrode of the pixel 5080_i+1,j and the wiring 5086-2_j form a capacitive element. The second pixel electrode of the pixel 5080_i+1,j is electrically connected to the wiring 508 6-1_j is electrically connected to the first pixel 5080_i,j+1 via a capacitance element. The pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitance element. The second pixel electrode 5080_i,j+1 and the wiring 5086-1_j+1 are connected via a capacitance element. The first pixel electrode of the pixel 5080_i+1,j+1 and the wiring 5086 are electrically connected to each other. -1_j+1 is electrically connected to the pixel 5080_i+1,j+1 via a capacitance element. The second pixel electrode and the wiring 5086-2_j+1 are electrically connected through a capacitance element. However, this is just an example. For example, if a pixel to which a signal voltage of positive polarity is written and a pixel to which a signal voltage of negative polarity is written are In the case of a driving method in which a pixel to which a signal voltage of the same polarity is written appears every two pixels, wiring 5 The electrical connections of the wiring 5086-1 and wiring 5086-2 are also made alternately every two pixels. Moreover, it is preferable that signal voltages of the same polarity are written to all pixels in one row. In this case, the wiring 5086 is connected to one row. In other words, even in the pixel configuration shown in FIG. 48(A), As explained with reference to 48(D), a driving method for reducing the signal voltage written to the pixel is used. There can be.

[0371] (Embodiment 11) Next, another example of the configuration of the display device and a method of driving the same will be described. In the case of a display device using a display element having a slow luminance response (long response time) to signal writing, In this embodiment, a liquid crystal display device is used as a display device with a long response time. However, the display element in this embodiment is not limited to this, and may be a signal writing element. Various display elements that have a slow response of brightness to crowding can be used.

[0372] In the case of a general liquid crystal display device, the response of brightness to signal writing is slow, and the signal current is not applied to the liquid crystal element. Even when pressure is applied continuously, it may take more than one frame period for the response to complete. Even if moving images are displayed on such a display device, they cannot be reproduced faithfully. Furthermore, in the case of active matrix driving, the time required to write a signal to one liquid crystal element is Usually, the signal writing period (one frame period or one subframe period) is divided by the number of scanning lines. The time it takes for the liquid crystal element to respond is only one scan line selection period. Therefore, most of the response of the liquid crystal element occurs during the period when no signal is written. Here, the dielectric constant of the liquid crystal element changes according to the transmittance of the liquid crystal element. However, the fact that the liquid crystal element responds during the period when no signal is written means that The dielectric constant of the liquid crystal element changes when no charge is exchanged with the outside (constant charge state). In other words, in the equation (charge) = (capacity) · (voltage), the charge is in a constant state. Since the capacitance changes depending on the voltage applied to the liquid crystal element, the voltage applied to the liquid crystal element changes according to the response of the liquid crystal element. Therefore, the voltage at the time of signal writing changes. When driving a liquid crystal element with a slow luminance response using an active matrix, In principle, the voltage cannot reach the voltage at the time of signal writing.

[0373] The display device of the present embodiment is configured to make the display element respond to a desired luminance within a signal writing period. In order to achieve this, the signal level at the time of signal writing is pre-compensated (compensation signal). Furthermore, the response time of the liquid crystal element increases as the signal level increases. The larger the response time, the shorter the response time of the liquid crystal element. This driving method of adding a correction signal is also called overdrive. In the overdrive of the present embodiment, the signal writing period is input to the display device. The period of the image signal (input image signal period T in ), even if the signal writing period is shorter than By correcting the signal level according to the period, the display element can be made to have the desired brightness within the signal writing period. The signal writing period is equal to or shorter than the input image signal period T in In the case where For example, an original image is divided into multiple sub-images, and the multiple sub-images are arranged in a single frame. For example, the images may be displayed sequentially within a certain period of time.

[0374] Next, a method for correcting a signal level when writing a signal in an active matrix display device is described. An example of the method will be described with reference to Figures 43(A) and (B). The horizontal axis is time and the vertical axis is the signal level at the time of signal writing. FIG. 43(B) is a graph showing a schematic representation of the change in luminance of the signal level over time when the The horizontal axis is time and the vertical axis is the display level, and the change in the display level of one display element over time. In addition, when the display element is a liquid crystal element, the signal The signal level can be expressed as the voltage, and the display level can be expressed as the transmittance of the liquid crystal element. The vertical axis of FIG. 3(A) is the voltage, and the vertical axis of FIG. 43(B) is the transmittance. In the embodiment, the overdrive is performed when the signal level is other than the voltage (duty ratio, current, etc. In the present embodiment, the overdrive is also applicable when the display level is transparent. This also includes cases other than transmittance (brightness, current, etc.). Normally black type (e.g. VA mode, IPS mode, etc.) and normally black type (e.g. 0V, 100V, 200V, 500V, 1000V, 1000V, 20 ...2000V, 2000V, 2000V, 2000V, There are normally white types (e.g. TN mode, OCB mode, etc.) that sometimes display white. However, the graph shown in Figure 43(B) corresponds to both, and in the case of normally black type The transmittance increases toward the top of the graph. The transmittance may be increased toward the bottom of the plate. The liquid crystal mode may be a normally black type or a normally white type. The timing of signal writing is indicated by a dotted line on the time axis, and the next The period until the signal is written is called the hold period F i In this embodiment, In Figure 43, i is an integer that represents the index of each retention period. In (A) and (B), i is shown as 0 to 2, but i can be any other value. It can also be an integer (values ​​other than 0 to 2 are not shown). i In The transmittance that realizes the brightness corresponding to the image signal is T i In the steady state, the transmittance T i Give The voltage that is applied is V i In addition, the broken line 5101 in FIG. 43(A) indicates the overdrive. The solid line 5102 represents the change over time of the voltage applied to the liquid crystal element when the liquid crystal element is not turned on. This shows the change in voltage over time applied to the liquid crystal element when overdriving is performed in the same manner. Similarly, the dashed line 5103 in FIG. 43(B) represents the liquid crystal element when overdrive is not performed. The solid line 5104 represents the time change in transmittance when overdrive is performed in this embodiment. The graph shows the change in the transmittance of the liquid crystal element over time when the hold period Fi At the end of , the desired transmittance T i The difference between the measured transmittance and the actual transmittance is called the error α i It will be written as follows.

[0375] In the graph shown in FIG. 43(A), the retention period F 0 In this case, the dashed line 5101 and the solid line 510 2. Both are the desired voltage V 0 is added, and the dashed line in the graph shown in FIG. Both 5103 and solid line 5104 have the desired transmittance T 0 It is assumed that the above has been obtained. If no overdrive is performed, the hold period F 1 At the beginning of The desired voltage V 1 is applied to the liquid crystal element, but as already mentioned, during the period when the signal is written is extremely short compared to the retention period, and most of the retention period is in a constant charge state, During the hold period, the voltage applied to the liquid crystal element changes along with the change in transmittance. F 1 At the end of 1 In this case, the voltage becomes significantly different from the The dashed line 5103 in the graph shown in FIG. 43(B) also indicates the desired transmittance T 1 was very different from As a result, it is not possible to display the image faithfully to the image signal, and the image quality deteriorates. On the other hand, when the overdrive of this embodiment is performed, the solid line 510 As shown in 2, the retention period F 1 At the beginning of the desired voltage V 1 A voltage greater than V 1 ´ is applied to the liquid crystal element. In other words, the hold period F 1 In the liquid crystal element In anticipation of the voltage change, the hold period F 1The voltage applied to the liquid crystal element at the end of is the desired voltage V 1 The hold period F 1 At the beginning of the desired voltage V 1 The corrected voltage V 1 By applying a voltage of V 1 The liquid crystal element In this case, the solid line 5104 in the graph shown in FIG. As shown in the figure, the retention period F 1 At the end of 1 That is, the protection Although the charge state is constant for most of the duration, The response of the liquid crystal element can be realized. Next, the hold period F 2 At this point, the desired voltage V 2 V 1 Yo This figure shows the case where the retention period F 1 Similarly, the retention period F 2 Smell The voltage applied to the liquid crystal element will gradually change over time, so the hold period F 2 At the end of The voltage applied to the liquid crystal element is the desired voltage V 2 The hold period F 2 At the beginning of At the desired voltage V 2 The corrected voltage V 2 This can be achieved by adding a As a result, as shown by the solid line 5104 in the graph of FIG. 2 After The desired transmission T at the tail 2 The retention period F 1 Like, V i V i-1 If it is larger than the corrected voltage V i ´ is the desired voltage V i It will be bigger than It is preferable to correct the hold period F 2 Like, V i V i-1 Compared to If the voltage becomes smaller, the corrected voltage V i ´ is the desired voltage V i Compensated to be smaller than It is preferable that the specific correction value is determined by calculating the response characteristic of the liquid crystal element in advance. The method of implementing it in the device is to formulate a correction formula and The correction values ​​are stored in memory as a look-up table. , a method of reading out a correction value as necessary, etc. can be used.

[0376] When the overdrive in this embodiment is actually realized as a device, There are various constraints. For example, voltage compensation must be performed within the rated voltage range of the source driver. That is, the desired voltage must be large to begin with, and the ideal correction voltage must be If the voltage exceeds the rated voltage of the source driver, the correction cannot be performed. The problems that arise in such a case will be described with reference to Figures 43(C) and (D). C) is the same as in Figure 43(A), with the horizontal axis being time and the vertical axis being voltage, and the FIG. 43(D) is a graph showing a schematic representation of the time change of the voltage at the As in FIG. 43B, the horizontal axis is time and the vertical axis is transmittance. This is a graph in which the change in transmittance over time is shown as a solid line 5106. The notation method is the same as that in Figures 43(A) and (B), so the explanation will be omitted. (C) and (D) are for the retention period F 1 Desired transmittance at T 1 To achieve this, the correction voltage Pressure V 1 ´ exceeds the rated voltage of the source driver, so V 1 ´=V 1 I have no choice but to say This indicates that the correction is insufficient. 1 At the end of The transmittance is the desired transmittance T 1 and error α 1 However, the value will be shifted by the error. α 1 The error α 1 In many cases, the degradation of image quality caused by the error α 1 Large As the voltage becomes larger, the error in the voltage correction algorithm also becomes larger. In the voltage correction algorithm, it is assumed that the desired transmittance is obtained at the end of the hold period. In fact, when the error α 1 Even though the error α 1 is small In order to correct the voltage as 2 This means that the correction in the As a result, the error α 2 Furthermore, the error α 2 If becomes larger, The next error α 3 The error continues to grow, and so on. As a result, the image quality is significantly degraded. In drives, in order to prevent errors from increasing in a chain reaction like this, , retention period F i At the correction voltage V i ´ exceeds the rated voltage of the source driver Period F i The error at the end of iEstimate the error α i Considering the size of F i+1 This allows the correction voltage at i It has become bigger. However, the error α i+1 This minimizes the impact on In the overdrive of the present embodiment, Then, the error α 2 An example of minimizing the above will be described with reference to Figures 43(E) and (F). The graph shown in FIG. 43(E) is a graph showing the correction voltage V 2 ´Further Adjust and correct the voltage V 2 The time change of voltage in this case is shown as solid line 5107. The graph shown in FIG. 43(F) is obtained by correcting the voltage according to the graph shown in FIG. 43(E). The solid line 51 in the graph shown in FIG. In 06, the correction voltage V 2 Although overcorrection occurs due to the In the solid line 5108 in the figure, the error α 1 The correction voltage V is adjusted to take into account 2 By Suppressing overcorrection and reducing error α 2 The specific correction value is to be determined at a later date. This can be derived by measuring the response characteristics of the liquid crystal element. The method is to formulate the correction formula and incorporate it into the logic circuit, or to use the correction value as a lookup table. The correction values ​​can be read out as necessary, for example. These methods are then used to calculate the correction voltage V i ´ is added separately from the part to be calculated, or supplemented Positive voltage V iIt can be incorporated into the part that calculates the error α i―1 Considering the The adjusted correction voltage V i ´ correction amount (desired voltage V i The difference between i ´ correction amount It is preferable to make it small. That is, |V i ´´-V i |<|V i ´-V i |Tosu It is preferable that

[0377] In addition, the error α i The shorter the signal writing period, the larger the The response time of the element must also be shortened, which requires a larger compensation voltage. Furthermore, the required correction voltage becomes larger, and as a result, the correction voltage is The frequency of exceeding the rated voltage of the i The frequency of occurrence is also high. Therefore, the overdrive in this embodiment is effective when the signal write period is short. Specifically, we divide an original image into multiple sub-images and When the plurality of sub-images are displayed in sequence within one frame period, the image is A motion of the plurality of images is detected, and an intermediate image of the plurality of images is generated. When inserting and driving (so-called motion compensation double speed drive), or when combining these When the driving method such as the above is performed, the overdrive of this embodiment is used. That will have a tremendous effect.

[0378] In addition to the upper limit, the rated voltage of the source driver also has a lower limit. In this case, the voltage applied cannot be smaller than 0. Similarly, an ideal correction voltage cannot be applied, so the error α i It's getting bigger However, even in this case, the holding period F i At the end of The error α i Estimate the error α i Considering the size of the retention period F i+1 Correction in The voltage can be adjusted. Note that the rated voltage of the source driver is set to a value less than 0. If it is possible to apply a large voltage (negative voltage), a negative voltage can be applied to the liquid crystal element as a correction voltage. In this way, the holding period F i At the end of the voltage applied to the liquid crystal element is the desired voltage V i It can be adjusted to a voltage close to do.

[0379] In order to prevent deterioration of the liquid crystal element, the polarity of the voltage applied to the liquid crystal element is periodically reversed. In other words, a so-called inversion drive can be implemented in combination with an overdrive. That is, the overdrive in this embodiment includes a case where it is performed simultaneously with the inversion drive. For example, if the signal writing period is equal to the input image signal period T in Reverse polarity if the and the input image signal period T in If the polarity of the signal is about the same, the writing of a positive signal and the writing of a negative signal The writing of the positive signal is alternated every two times. By making the period of charge and discharge longer than the signal writing period, the frequency of charging and discharging the pixels can be reduced. This reduces power consumption. However, if the polarity reversal period is too long, the polarity difference The difference in brightness caused by the polarity of the input signal may be perceived as flicker. The period for which the signal is input is T in It is preferable that the length is equal to or shorter than the length.

[0380] (Embodiment 12) Next, another example of the configuration of the display device and a method of driving the same will be described. In this case, an image that interpolates the movement of an image (input image) input from outside the display device is generated by multiple A display device generates an image based on an input image, and compares the generated image with the input image. The method of displaying the generated image by sequentially adding the motion of the input image will be described. By making the image appear to move in a certain direction, the movement of the video can be made smoother. This improves the problem of image retention and other issues that cause video quality to decrease due to video compensation. The display of moving images ideally requires changing the brightness of each pixel in real time. This is achieved by controlling the pixels in real time, but the real-time individual control of the pixels is The number of paths becomes huge, the wiring space becomes an issue, and the amount of input image data becomes huge. Therefore, it is difficult to realize the display of moving images on a display device. The display is made to look like a moving image by displaying multiple still images in sequence at a regular interval. This period (called the input image signal period in this embodiment, T in and For example, the NTSC standard is 1 / 60th of a second, and the PAL standard is 1 Even with this period, the impulse type display device, the CRT, is not affected by the movement. However, there were no problems with the image display. If a video conforming to the above is displayed as is, the display may be blurred due to afterimages caused by the hold type. This causes a problem called hold blur. Blurring occurs when the human eye compensates for unconscious movements and the display does not match the hold type. Since it is recognized by discrepancy, the input image signal is smaller than that of the conventional standard. This can be reduced by shortening the signal cycle (approaching real-time individual control of pixels). However, shortening the input image signal period will require changes to the standard and will also increase the amount of data. However, it is difficult to do this based on a standardized input image signal. An image that interpolates the movement of the input image is generated inside the display device, and the generated image By interpolating the input image and displaying it, the hold function can be used without changing the standard or increasing the amount of data. In this way, the image signal is generated inside the display device based on the input image signal. The process of interpolating the motion of an input image is called video interpolation.

[0381] The moving image interpolation method according to the present embodiment can reduce the blurring of the moving image. The moving image interpolation method in the embodiment can be divided into an image generation method and an image display method. And for certain patterns of movement, different image generation methods and / or image display methods are used. By using this method, motion blur can be effectively reduced. FIG. 1B is a schematic diagram for explaining an example of a moving image interpolation method according to the present embodiment. In Figures 44(A) and (B), the horizontal axis represents time, and the horizontal position represents The part marked "Input" indicates the timing at which each image is handled. This represents the timing at which two images are input. The image 5121 and the image 5122 are focused on. The input image has a period T in Enter at intervals of In addition, the period T in The length of one frame is referred to as one frame period. The part marked "Generation" indicates the timing at which a new image is generated from the input image signal. Here, the generated image is based on the image 5121 and the image 5122. The part marked "display" indicates that the image is displayed on the display device. This shows the timing when the image is displayed. Although it is only indicated by a dashed line, by treating it in the same way as the image of interest, An example of a method for interpolating moving images in this form can be realized.

[0382] In the present embodiment, an example of a method for interpolating a moving image is shown in FIG. A generated image is generated based on two adjacent input images. The two input images are displayed. By displaying the video in the gap between the two, it is possible to interpolate the video. It is preferable that the display period of the display image is half the input period of the input image. However, the display period is not limited to this, and various display periods can be used. For example, the display period is set to the input period By setting the display cycle shorter than half, the video will be displayed more smoothly. By making it longer than half the period, power consumption can be reduced. An image is generated based on two adjacent input images, but the number of input images is limited to two. For example, three (or more) time-adjacent If you generate an image based on an input image (good), it will be easier to generate an image than if you generate an image based on two input images. It is possible to obtain a generated image with high accuracy. The same time as the input timing of 5122, that is, the display timing relative to the input timing Although it is delayed by one frame, the display timing in the video interpolation method in this embodiment is The timing is not limited to this, and various display timings can be used. For example, You can delay the display timing by one or more frames. Then, the display timing of the generated image, image 5123, can be delayed, so image 5 This allows for more time for the generation of 123, which reduces power consumption and manufacturing costs. If the display timing is too delayed with respect to the input timing, This increases the time required to store the force image, and increases the memory capacity required for storage. The display timing relative to the input timing should preferably be delayed by one to two frames. I wish.

[0383] Here, the specific image 5123 generated based on the image 5121 and the image 5122 is In order to interpolate a moving image, the motion of the input image is detected. However, in this embodiment, a block map is used to detect the motion of the input image. However, there are various methods that can be used without being limited to this. (Methods such as taking the difference between image data and using Fourier transform) can be used. In the block matching method, first, the image data of one input image (here, the image 5121) to a data storage means (semiconductor memory, RAM or other storage circuit, etc.) Then, the image in the next frame (image 5122 in this example) is stored in memory. The divided areas are all rectangular in shape, as shown in Figure 44(A). It can be, but is not limited to, various things (shape or size can be changed depending on the image) Then, for each divided area, the data stored in the data storage means can be The data is compared with the image data of the previous frame (here, the image data of image 5121). In the example of FIG. 44(A), the image 5122 has similar image data. A region similar in data to the region 5124 in the image 5121 is searched for, and the region 512 6 is assumed to have been searched. Note that when searching within image 5121, the search range is limited. In the example of FIG. 44(A), the search range is set to an area 5124. The area 5125 is set to be about four times the area of ​​the By making it larger, the detection accuracy can be improved even in fast-moving videos. However, if the search is too broad, the search time will be enormous, and the detection of motion will be difficult. Since this would be difficult to realize, the area of ​​the region 5125 is set to about 2 to 6 times the area of ​​the region 5124. Then, the searched region 5126 and the region in the image 5122 are compared. The difference in position between the area 5124 and the motion vector 5127 is calculated. 7 represents the movement of image data in the region 5124 during one frame period. To generate an image that represents an intermediate state of motion, the motion vectors are scaled while keeping their orientation unchanged. A modified image generation vector 5128 is created, and the region 5126 in the image 5121 is The image data is moved according to the image generation vector 5128 to generate the image 5123. This series of processing is called image 512 By performing this for all regions in 2, image 5123 can be generated. Then, by sequentially displaying the input image 5121, the generated image 5123, and the input image 5122, In addition, the object 5130 in the image is not included in the image 5121 and the image 5122. The position is different (i.e., moving) in the image 5122, but the generated image 512 3 is the midpoint of the object in the image 5121 and the image 5122. By displaying the image, the movement of the video can be made smoother, and blurred video caused by afterimages, etc. can be eliminated. The clarity can be improved.

[0384] The size of the image generation vector 5128 is determined according to the display timing of the image 5123. In the example of FIG. 44(A), the display timing of the image 5123 can be determined. is set to the midpoint (1 / 2) of the display timing of image 5121 and image 5122. The size of the image generation vector 5128 is half that of the motion vector 5127. For example, if the display timing is 1 / 3, the size is set to 1 / 3 and the display time is set to 1 / 3. If the timing is 2 / 3, the size can be set to 2 / 3.

[0385] In this way, multiple regions with various motion vectors are moved to create a new image. When creating an image, the area to be moved may contain overlapping areas, or it may be possible to move the area to another area. There may be some blank areas that are not moved from the area. As a method for correcting the overlapping portion, for example, Priority is assigned based on the average method, the direction of the motion vector, etc., and data with high priority is generated. The method of making the data in the generated image, where either color (or brightness) is given priority, but brightness (or For example, the method of taking the average of the number of pixels (or color) can be used. The image data at the corresponding position of the image 5121 or 5122 is directly used as the data in the generated image. A method for obtaining the average of image data at the corresponding position of the image 5121 or the image 5122. Then, the generated image 5123 can be used as a method for generating an image. By displaying the vector 5128 at a timing that matches its size, the movement of the video becomes smoother. Furthermore, the problem of image retention caused by hold drive resulting in reduced video quality can be eliminated. You can improve the problem.

[0386] Another example of the moving image interpolation method according to the present embodiment is a time interpolation method as shown in FIG. A generated image is generated based on two input images that are adjacent to each other. When displaying the images in the gaps between the displayed images, each image is further divided into multiple sub-images. By dividing the image into several parts and displaying them, it is possible to perform video interpolation. In addition to the benefits of shorter time, dark images are periodically displayed (the display method is This also provides the advantage of the image display period being closer to the image input period. This reduces blurring of the video due to afterimages, etc., compared to when the length is only half that of the power cycle. In the example of FIG. 44(B), the “input” and “generation” can be further improved by Since the same processing as in the example of FIG. 4(A) can be performed, the explanation will be omitted. In the example, "display" means splitting one input image and / or generated image into multiple sub-images. Specifically, as shown in FIG. 44(B), an image 5121 can be displayed. By dividing the image into sub-images 5121a and 5121b and displaying them sequentially, the image appears to the human eye as 5121 is perceived as being displayed, and image 5123 is perceived as sub-images 5123a and 512 By dividing the image into 3b and displaying them sequentially, the human eye perceives the image as 5123. and dividing the image 5122 into sub-images 5122a and 5122b and displaying them in sequence. The human eye perceives the image 5122 as being displayed. The image to be displayed is the same as that shown in FIG. 44(A), but the display method is impulse type. This makes it possible to further improve the blurring of moving images caused by afterimages, etc. The number of divided sub-images is two in FIG. 44(B), but is not limited to this and may be various. The number of divisions can be any number. The timing for displaying the sub-image is as shown in FIG. ) are displayed at equal intervals (1 / 2), but this is not limited to this and various display timings can be used. For example, the dark sub-images (5121b, 5122b, 5123b) By speeding up the display timing (specifically, from 1 / 4 to 1 / 2), the display The method can be made closer to the impulse type, which reduces blurring of moving images caused by afterimages, etc. Or, the timing of displaying the dark sub-image can be delayed (specifically, 1 / 2 to 3 / 4 of the time) to extend the period during which bright images are displayed. Therefore, the display efficiency can be improved and the power consumption can be reduced.

[0387] Another example of the moving image interpolation method according to the present embodiment is to detect the shape of an object moving in an image. This is an example in which different processing is performed depending on the shape of the moving object. indicates the timing of display in the same way as the example in FIG. 44(B), but the displayed content is This shows the case of moving text (also called scrolling text, subtitles, telop, etc.). In addition, the "input" and "generation" may be the same as in FIG. 44(B). The blurring of moving images during hold driving is due to the nature of the moving object. This is especially noticeable when the text is moving. This is because when reading moving text, your eyes will inevitably follow the text. This is because hold blurring is likely to occur. Furthermore, characters have clear outlines. This can further accentuate the blur caused by hold blur. That is, it is necessary to determine whether an object moving in an image is a character or not, and if so, to perform further special processing. This is effective for reducing hold blur. Contour and / or pattern detection is performed on the object to determine whether the object is a character. If it is determined that there is a motion, motion compensation is not performed even if the sub-images are divided from the same image. By displaying intermediate states of the object's movement, the object's movement can be made smoother. If it is determined that the character is not a character, it is divided into two parts from the same image, as shown in Figure 44(B). If the sub-image is a moving one, the position of the moving object can be displayed without changing. In the example shown in FIG. 1, an area 5131 determined to be a character is moving upward. However, the position of region 5131 is made different between image 5121a and image 5121b. The same applies to images 5123a and 5123b, and images 5122a and 5122b. This allows moving characters, which are particularly susceptible to hold blur, to be displayed in a similar way to normal moving characters. This makes the movement even smoother than the compensated double speed drive, so it can reduce image lags and other problems that can occur in moving images. The blur can be further improved.

[0388] (Embodiment 13) The semiconductor device can be applied to various electronic devices (including game machines). Examples of such devices include television sets (also called televisions or television receivers); Computer monitors, digital cameras, digital video cameras and other cameras, devices digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples of such devices include machines, portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0389] FIG. 32A shows an example of a television device 9600. The display unit 9603 is incorporated in the housing 9601. In addition, the stand 9605 supports the housing 9601. This shows a configuration in which the above is supported.

[0390] The television device 9600 can be operated using an operation switch on the housing 9601 or a separate remote control. This can be done by the remote control operation device 9610. The channel and volume can be controlled by the 9609, and the display 9603 shows In addition, the remote control unit 9610 can control the video. A display portion 9607 for displaying information output from 9610 may be provided.

[0391] The television device 9600 includes a receiver and a modem. It can receive more general television broadcasts, and also has wired or over-the-air reception via a modem. By connecting to a network, communication can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0392] FIG. 32B shows an example of a digital photo frame 9700. The photo frame 9700 includes a display unit 9703 built into a housing 9701. The unit 9703 is capable of displaying various images, for example images captured by a digital camera. By displaying the image data, it can function like a normal photo frame.

[0393] The Digital Photo Frame 9700 is equipped with an operation unit, external connection terminals (USB terminal, US A terminal that can be connected to various cables such as B cable, etc., and a recording medium insertion section, etc. These components may be installed on the same surface as the display unit, but they may be installed on the side or back. It is preferable to have a digital photo frame with a built-in memory card because it improves the design. A memory that stores image data taken with a digital camera is inserted into the body insertion section. The captured image data can be displayed on the display portion 9703 .

[0394] The digital photo frame 9700 may also be configured to transmit and receive information wirelessly. It is also possible to wirelessly import and display desired image data.

[0395] FIG. 33(A) shows a portable gaming machine, which is composed of two housings, a housing 9881 and a housing 9891. The housing 9881 is connected to a connector 9893 so as to be openable and closable. A display unit 9883 is incorporated in the housing 9891. The portable gaming machine shown in FIG. 33(A) also includes a speaker unit 9884 and a recording medium insertion unit 988. 6, LED lamp 9890, input means (operation keys 9885, connection terminals 9887, sensors 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, Chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration 9889) equipped with a microphone, etc. Of course, the configuration of the portable gaming machine is not limited to the above, and at least the semiconductor device It is sufficient that the device is provided with the equipment, and other auxiliary equipment may be provided as appropriate. The portable gaming machine shown in FIG. 33(A) uses a program or data recorded on a recording medium. It also has the function of reading the information and displaying it on the display, and sharing information with other portable gaming machines via wireless communication. The functions of the portable gaming machine shown in FIG. 33(A) are not limited to these. It can have a variety of functions.

[0396] FIG. 33(B) shows an example of a slot machine 9900, which is a large-scale gaming machine. The machine 9900 has a display unit 9903 built into a housing 9901. The Machine 9900 also includes other operating means such as a start lever and stop switch, coin The slot machine 9900 is equipped with a slot slot, a speaker, etc. However, the present invention is not limited to the above, and may be configured to include at least a semiconductor device, and other auxiliary equipment may be included. The configuration may be appropriately arranged.

[0397] FIG. 34A shows an example of a mobile phone 1000. The mobile phone 1000 has a housing. In addition to the display unit 1002 incorporated in the 1001, the operation buttons 1003 and the external connection port 10 04, a speaker 1005, a microphone 1006, etc.

[0398] The mobile phone 1000 shown in FIG. 34A displays information by touching the display unit 1002 with a finger or the like. In addition, operations such as making a phone call or sending an e-mail can be performed by using the display. This can be done by touching 1002 with a finger or the like.

[0399] The screen of the display unit 1002 has three main modes. The first is a display mode that is mainly used for displaying images. The first mode is a display mode, the second is an input mode for inputting information such as characters, and the third mode is a display mode. This is a display + input mode that combines the display mode and the input mode.

[0400] For example, when making a call or composing an e-mail, the display unit 1002 is used for inputting characters. The main character input mode is to input characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. I wish.

[0401] In addition, a sensor for detecting tilt, such as a gyro or an acceleration sensor, is installed inside the mobile phone 1000. By providing a detection device having the above configuration, the orientation of the mobile phone 1000 (portrait or landscape) can be determined and the display The screen display of the display unit 1002 can be automatically switched.

[0402] The screen mode can be changed by touching the display unit 1002 or by operating the housing 1001. This is done by operating the button 1003. Also, depending on the type of image displayed on the display unit 1002, For example, the image signal to be displayed on the display unit is a moving image. If it is data, the mode is switched to display mode, and if it is text data, the mode is switched to input mode.

[0403] In the input mode, the optical sensor of the display unit 1002 detects a signal and displays If there is no input by touch operation of the part 1002 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0404] The display unit 1002 can also function as an image sensor. By touching the palm or fingers to the sensor 02, the palm print, fingerprint, etc. can be captured and identity authentication can be performed. In addition, the display unit may be equipped with a backlight that emits near-infrared light or a sensor that emits near-infrared light. By using a scanning light source, it is also possible to image finger veins, palm veins, etc.

[0405] FIG. 34B is also an example of a mobile phone. The mobile phone in FIG. 34B has a housing 9411. A display device 9410 including a display portion 9412 and an operation button 9413 and a housing 9401 An operation button 9402, an external input terminal 9403, a microphone 9404, a speaker 9405, and The communication device 9400 includes a light emitting unit 9406 that emits light when an incoming call is received, and has a display function. The display device 9410 can be attached to and detached from the communication device 9400 having a telephone function in the two directions shown by the arrows. Therefore, the display device 9410 and the communication device 9400 can be attached to each other with their short axes facing each other. The display device 9410 and the communication device 9400 can be attached to each other with their long axes facing each other. When only the function is required, the display device 9410 is removed from the communication device 9400, and the display device The communication device 9400 and the display device 9410 may be used alone. Images or input information can be sent and received via wireless or wired communication, and each can be recharged with a rechargeable battery. Has Terry. [Explanation of symbols]

[0406] 100 Substrates 102 Conductive film 104 Conductive film 106 Insulating Layer 108 Conductive Film 110 Conductive film 112 Semiconductor film 114 Insulating layer 116 Conductive Layer 117 Conductive Layer 119 Contact Hole 120 Gate wiring 122 Wiring 124 Wiring 125 Contact Hole 126 Wiring 127 Insulating Layer 128 Wiring 132 Electrode 136 Electrode 138 Electrode 140 Holding capacity section 150 pixels 152 Transistor 154 Holding capacity section 156 Transistor 158 Holding capacity section 161 Resist Mask 162 Resist Mask 163 Resist Mask 164 Resist Mask 165 Resist Mask 168 Resist Mask 180 Substrate 182 Substrate 232 Electrode 236 Electrode 238 Electrode 400 Substrates 401 Shading part 402 Diffraction Grating 403 Gray Tone Mask 411 Substrate 412 Semi-transparent part 413 Shading part 414 Halftone Mask 580 Substrate 581 Thin Film Transistor 583 Insulating Layer 587 Electrode layer 588 Electrode layer 589 Spherical particles 594 Cavity 595 Filling material 596 Board 1000 Mobile Phones 1001 Case 1002 Display section 1003 Operation button 1004 External connection port 1005 Speaker 1006 Mike 102a conductive layer 102b Conductive layer 102c conductive layer 104a conductive layer 104b Conductive layer 108a conductive layer 108b Conductive layer 108c conductive layer 108d conductive layer 108e conductive layer 110a conductive layer 110b Conductive layer 110c conductive layer 112a Semiconductor layer 112b Semiconductor layer 113a n+ area 114a Insulating layer 114b Insulating layer 118a Contact Hole 118b Contact hole 171a Resist mask 171b Resist mask 171c Resist mask 172a Resist mask 172b Resist mask 172c Resist mask 181a Light blocking layer 181b Semi-transparent layer 183a Semi-transparent layer 183b Light blocking layer 2600 TFT substrate 2601 Opposing substrate 2602 Sealing material 2603 Element Layer 2604 Display element 2605 Colored layer 2606 Polarizing plate 2607 Polarizing plate 2608 Wiring circuit section 2609 Flexible wiring board 2610 cold cathode tube 2611 Reflector 2612 Circuit Board 2613 Diffuser 2631 Poster 2632 In-car advertising 2700 e-books 2701 Case 2703 Case 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation key 2725 Speaker 4001 Substrate 4002 Pixel section 4003 Signal line driver circuit 4004 Scanning line driver circuit 4005 Sealing material 4006 Substrate 4008 Liquid crystal layer 4010 Thin film transistor 4011 Thin film transistor 4013 Liquid crystal element 4015 Connection terminal electrode 4016 Terminal electrode 4018 FPC 4019 Anisotropic conductive film 4020 Insulation layer 4021 Insulation layer 4030 Pixel electrode layer 4031 Counter electrode layer 4032 Insulation layer 4051 PCB 4501 Board 4502 Pixel section 4505 Sealing material 4506 Board 4507 Filling material 4509 Thin-film transistor 4510 Thin-film transistor 4511 Light emitting element 4512 Electroluminescent layer 4513 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4519 Anisotropic conductive film 4520 Bulkhead 5080 pixels 5081 Transistor 5082 Liquid crystal element 5083 Capacitive element 5084 Wiring 5085 Wiring 5086 Wiring 5087 Wiring 5088 Electrode 5101 dashed line 5102 Solid line 5103 Dashed Line 5104 Solid line 5105 Solid line 5106 Solid Line 5107 Solid Line 5108 Solid line 5121 images 5122 images 5123 images 5124 area 5125 area 5126 area 5127 Vector 5128 Image Generation Vectors 5129 area 5130 Object 5131 area 5300 Board 5301 Pixel unit 5302 Scanning line driver circuit 5303 Signal line driver circuit 5400 Board 5401 Pixel unit 5402 Scanning line driver circuit 5403 Signal line driver circuit 5404 Scanning line driver circuit 590a black area 590b White area 6400 pixels 6401 Switching transistor 6402 Driving transistor 6403 Capacitor 6404 Light emitting element 6405 Signal Line 6406 scan lines 6407 Power line 6408 Common electrode 6420 pixels 6423 Capacitor 6426 Wiring 7001 TFT 7002 Light emitting element 7003 Cathode 7004 Light-emitting layer 7005 Anode 7011 Driving TFT 7012 Light emitting element 7013 Cathode 7014 Light-emitting layer 7015 Anode 7016 Shielding membrane 7017 Conductive film 7021 Driving TFT 7022 Light emitting element 7023 Cathode 7024 Light-emitting layer 7025 Anode 7027 Conductive film 9400 Communication Equipment 9401 Case 9402 Operation button 9403 External input terminal 9404 Microphone 9405 Speaker 9406 Light emitting part 9410 Display device 9411 Housing 9412 Display section 9413 Operation button 9600 Television Equipment 9601 Case 9603 Display section 9605 Stand 9607 Display section 9609 Operation key 9610 Remote control device 9700 Digital Photo Frame 9701 Case 9703 Display section 9881 Case 9882 Display section 9883 Display section 9884 Speaker section 9885 Operation key 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 Case 9893 Connection section 9900 Slot Machine 9901 Case 9903 Display section 4503a Signal line driver circuit 4504a Scanning line driver circuit 4518a FPC 5121a Image 5121b Images 5122a Image 5122b Image 5123a Image 5123b Images

Claims

1. A liquid crystal display device having a pixel section and a driving circuit section on a substrate, the pixel portion includes a first transistor, a storage capacitor portion, a color filter, and a light-emitting element; the drive circuit unit has a second transistor, the storage capacitor includes a first metal oxide layer, an insulating layer located above the first metal oxide layer, and a first conductive layer located above the insulating layer; the insulating layer comprises silicon oxide; the insulating layer has an area overlapping the first metal oxide layer, the first conductive layer has an area overlapping the insulating layer, the first transistor has a second metal oxide layer; the second transistor has a third metal oxide layer; the insulating layer has a region in contact with an upper surface of the second metal oxide layer; the insulating layer has a region in contact with an upper surface of the third metal oxide layer, the light-emitting element includes a second conductive layer, a light-emitting layer located above the second conductive layer, and a metal film located above the light-emitting layer; The light-emitting layer includes an organic material, the second conductive layer has a region overlapping with the storage capacitor, the second conductive layer has an area overlapping the color filter, the second conductive layer has a region in contact with an upper surface of the first conductive layer, a source wiring of the first transistor has a region in contact with an upper surface of the insulating layer; the first metal oxide layer, the second metal oxide layer, the third metal oxide layer, and the second conductive layer have light-transmitting properties; the source wiring has a light-shielding property, the first metal oxide layer has a region that functions as an electrode of the storage capacitor, The second conductive layer has a region that functions as a pixel electrode.

2. A liquid crystal display device having a pixel section and a driving circuit section on a substrate, the pixel portion includes a first transistor, a storage capacitor portion, a color filter, and a light-emitting element; the drive circuit unit has a second transistor, the storage capacitor includes a first metal oxide layer, an insulating layer located above the first metal oxide layer, and a first conductive layer located above the insulating layer; the insulating layer comprises silicon oxide; the insulating layer has an area overlapping the first metal oxide layer, the first conductive layer has an area overlapping the insulating layer, the first transistor has a second metal oxide layer; the second transistor has a third metal oxide layer; the insulating layer has a region in contact with an upper surface of the second metal oxide layer; the insulating layer has a region in contact with an upper surface of the third metal oxide layer, the light-emitting element includes a second conductive layer, a light-emitting layer located above the second conductive layer, and a metal film located above the light-emitting layer; The light-emitting layer includes an organic material, the second conductive layer has a region overlapping with the storage capacitor, the second conductive layer has an area overlapping the color filter, the second conductive layer has a first region in contact with the first conductive layer; the first region has an area overlapping the first metal oxide layer, the insulating layer has a region in contact with an upper surface of the gate wiring of the first transistor, the first metal oxide layer, the second metal oxide layer, the third metal oxide layer, and the second conductive layer have light-transmitting properties; the gate wiring has a light-shielding property, the first metal oxide layer has a region that functions as an electrode of the storage capacitor, A display device, wherein the second conductive layer has a region that functions as a pixel electrode.

3. A liquid crystal display device having a pixel section and a driving circuit section on a substrate, the pixel portion includes a first transistor, a storage capacitor portion, and a light-emitting element; the drive circuit unit has a second transistor, the storage capacitor includes a first metal oxide layer, an insulating layer located above the first metal oxide layer, and a first conductive layer located above the insulating layer; the insulating layer comprises silicon oxide; the insulating layer has an area overlapping the first metal oxide layer, the first conductive layer has an area overlapping the insulating layer, the first transistor has a second metal oxide layer; the second transistor has a third metal oxide layer; the insulating layer has a region in contact with an upper surface of the second metal oxide layer; the insulating layer has a region in contact with an upper surface of the third metal oxide layer, the light-emitting element includes a second conductive layer, a light-emitting layer located above the second conductive layer, and a metal film located above the light-emitting layer; The light-emitting layer includes an organic material, the second conductive layer has a region overlapping with the storage capacitor, the second conductive layer has a region in contact with an upper surface of the first conductive layer, a source wiring of the first transistor has a region in contact with an upper surface of the insulating layer; the first metal oxide layer, the second metal oxide layer, the third metal oxide layer, and the second conductive layer have light-transmitting properties; the source wiring has a light-shielding property, the first metal oxide layer has a region that functions as an electrode of the storage capacitor, The second conductive layer has a region that functions as a pixel electrode.

4. A liquid crystal display device having a pixel section and a driving circuit section on a substrate, the pixel portion includes a first transistor, a storage capacitor portion, and a light-emitting element; the drive circuit unit has a second transistor, the storage capacitor includes a first metal oxide layer, an insulating layer located above the first metal oxide layer, and a first conductive layer located above the insulating layer; the insulating layer comprises silicon oxide; the insulating layer has an area overlapping the first metal oxide layer, the first conductive layer has an area overlapping the insulating layer, the first transistor has a second metal oxide layer; the second transistor has a third metal oxide layer; the insulating layer has a region in contact with an upper surface of the second metal oxide layer; the insulating layer has a region in contact with an upper surface of the third metal oxide layer, the light-emitting element includes a second conductive layer, a light-emitting layer located above the second conductive layer, and a metal film located above the light-emitting layer; The light-emitting layer includes an organic material, the second conductive layer has a region overlapping with the storage capacitor, the second conductive layer has a first region in contact with the first conductive layer; the first region has an area overlapping the first metal oxide layer, the insulating layer has a region in contact with an upper surface of the gate wiring of the first transistor, the first metal oxide layer, the second metal oxide layer, the third metal oxide layer, and the second conductive layer have light-transmitting properties; the gate wiring has a light-shielding property, the first metal oxide layer has a region that functions as an electrode of the storage capacitor, A display device, wherein the second conductive layer has a region that functions as a pixel electrode.

5. In any one of claims 1 to 4, The display device, wherein the first metal oxide layer is a single layer.

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