High voltage capacitor

Abstract

To provide a high-voltage feedthrough capacitor that has even higher reliability.SOLUTION: A high-voltage feedthrough capacitor HC1 comprises a feedthrough capacitor unit 1 and a resin 2 covering the feedthrough capacitor unit 1. The feedthrough capacitor unit 1 has: an element body 11 that includes first and second principal surfaces 11a and 11b opposed to each other and is formed with a through-hole 16 opening on the first and second principal surfaces 11a and 11b; first and second electrodes 12 and 15 respectively formed on the first and second principal surfaces 11a and 11b; a through conductor 30 inserted into the through-hole 16 and electrically connected with the first electrode 12; and a terminal conductor 20 electrically connected with the second electrode 15. A coupling structure 5 chemically couples between a surface 1a of the feedthrough capacitor unit 1 and a surface 2a of the resin 2.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a high-voltage capacitor. [Background technology]

[0002] There is known a high-voltage feedthrough capacitor comprising a feedthrough capacitor unit and a resin covering the feedthrough capacitor unit (see, for example, Patent Document 1). The feedthrough capacitor unit comprises an element body having a through hole formed in first and second main surfaces facing each other, a feedthrough conductor inserted in the through hole and electrically connected to a first electrode on the first main surface, and a terminal conductor electrically connected to a second electrode on the second main surface. The high-voltage feedthrough capacitor is connected, for example, to a magnetron for a microwave oven to prevent unwanted radiation noise from the magnetron for the microwave oven. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2001-351830 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one aspect of the present invention is to provide a high-voltage capacitor having even higher reliability. [Means for solving the problem]

[0005] The present inventors have conducted extensive research into a high-voltage capacitor having even higher reliability, and as a result have obtained the following new findings, which have led to the present invention. In a configuration in which the feedthrough capacitor unit is strongly bonded to the resin covering the feedthrough capacitor unit, gaps are unlikely to occur between the feedthrough capacitor unit and the resin. In this case, partial discharges due to gaps are unlikely to occur. In a configuration in which the feedthrough capacitor unit is strongly bonded to the resin, discharges along the surface of the feedthrough capacitor unit, so-called creepage discharges, are also unlikely to occur. Therefore, in a high-voltage feedthrough capacitor that employs a configuration in which the feedthrough capacitor unit is strongly bonded to the resin, discharges are unlikely to occur, further improving reliability.

[0006] A high-voltage feedthrough capacitor according to one embodiment includes a feedthrough capacitor unit having an element body including first and second main surfaces facing each other and having through holes opening into the first and second main surfaces, first and second electrodes formed on the first and second main surfaces, respectively, a feedthrough conductor inserted in the through hole and electrically connected to the first electrode, and a terminal conductor electrically connected to the second electrode, and a resin covering the feedthrough capacitor unit. A bonding structure is provided that chemically bonds a surface of the feedthrough capacitor unit to a surface of the resin.

[0007] In one aspect, in a configuration in which the feedthrough capacitor unit is covered with resin, a bonding structure is provided that chemically bonds a surface of the feedthrough capacitor unit to a surface of the resin. The chemical bond in the bonding structure is stronger than the bond between the surface of the feedthrough capacitor unit and the surface of the resin due to, for example, an anchor effect caused by the roughness of the surface of the feedthrough capacitor unit. Therefore, the one aspect reliably achieves a strong bond between the feedthrough capacitor unit and the resin.

[0008] In one aspect above, the surface of the feedthrough capacitor unit may include an inner wall surface that defines the through hole in the element body. In this case, the bonding structure may chemically bond the inner wall surface that defines the through hole to the surface of the resin. In a configuration in which the bonding structure chemically bonds the inner wall surface and the surface of the resin, the bond between the inner wall surface that defines the through hole and the surface of the resin is strong. Therefore, this configuration reliably achieves a strong bond between the inner wall surface that defines the through hole and the resin.

[0009] In one of the above aspects, the feedthrough capacitor unit may have a coating material that coats the feedthrough conductor and has electrical insulation, and the surface of the feedthrough capacitor unit may include the outer surface of the coating material. In this case, the bonding structure may chemically bond the outer surface of the coating material and the surface of the resin. In a configuration in which the bonding structure chemically bonds the outer surface of the coating material and the surface of the resin, the bond between the outer surface of the coating material and the surface of the resin is strong. Therefore, this configuration reliably achieves a strong bond between the outer surface of the coating material and the resin.

[0010] In the one aspect described above, the surface of the feedthrough capacitor unit may include a surface of the terminal conductor. In this case, the bonding structure may chemically bond the surface of the terminal conductor and the surface of the resin. In a configuration in which the bonding structure chemically bonds the surface of the terminal conductor and the surface of the resin, the bond between the surface of the terminal conductor and the surface of the resin is strong. Therefore, this configuration reliably achieves a strong bond between the surface of the terminal conductor and the resin.

[0011] In one aspect, the first electrode includes a pair of conductors spaced apart from each other on the first main surface, the element body has a groove formed between the pair of conductors, and the surface of the feedthrough capacitor unit may include a wall surface in the element body that defines the groove. In this case, the bonding structure may chemically bond the wall surface that defines the groove to the surface of the resin. In a configuration in which the bonding structure chemically bonds the wall surface that defines the groove to the surface of the resin, the bond between the wall surface that defines the groove and the surface of the resin is strong. Therefore, this configuration reliably achieves a strong bond between the wall surface that defines the groove and the resin.

[0012] In one of the above aspects, in the bonded structure, the surface of the feedthrough capacitor unit and the surface of the resin may be chemically bonded via a silicon atom derived from a silane coupling agent. In a configuration in which the surface of the feedthrough capacitor unit and the surface of the resin are chemically bonded via a silicon atom derived from a silane coupling agent, the bond between the surface of the feedthrough capacitor unit and the surface of the resin is, for example, a covalent bond via a silicon atom. Therefore, this configuration more reliably realizes a strong bond between the feedthrough capacitor unit and the resin.

[0013] In the above-mentioned one embodiment, the silane coupling agent may be introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin. In a configuration in which the silane coupling agent is introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin, the chemical bond between the surface of the feedthrough capacitor unit and the surface of the resin is more reliably formed by the silicon atoms. Therefore, this configuration realizes a strong bond between the feedthrough capacitor unit and the resin more reliably.

[0014] In one of the above aspects, in the bonded structure, the surface of the feedthrough capacitor unit and the surface of the resin may be chemically bonded via a phosphorus atom derived from a phosphonic acid derivative. In a configuration in which the surface of the feedthrough capacitor unit and the surface of the resin are chemically bonded via a phosphorus atom derived from a phosphonic acid derivative, the bond between the surface of the feedthrough capacitor unit and the surface of the resin is, for example, a covalent bond via the phosphorus atom. Therefore, this configuration more reliably realizes a strong bond between the feedthrough capacitor unit and the resin.

[0015] In one of the above aspects, the phosphonic acid derivative may be introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin. In a configuration in which the phosphonic acid derivative is introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin, the chemical bond between the surface of the feedthrough capacitor unit and the surface of the resin is more reliably formed by the phosphorus atom. Therefore, this configuration more reliably realizes a strong bond between the feedthrough capacitor unit and the resin.

[0016] In one of the above aspects, in the bonded structure, the surface of the feedthrough capacitor unit and the surface of the resin may be chemically bonded via a central metal atom derived from a chelate complex. In a configuration in which the surface of the feedthrough capacitor unit and the surface of the resin are chemically bonded via a central metal atom derived from a chelate complex, the bond between the surface of the feedthrough capacitor unit and the surface of the resin is, for example, a covalent bond via the central metal atom. Therefore, this configuration more reliably realizes a strong bond between the feedthrough capacitor unit and the resin.

[0017] In one of the above aspects, the chelate complex may be introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin. In a configuration in which the chelate complex is introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin, the chemical bond between the surface of the feedthrough capacitor unit and the surface of the resin is more reliably formed by the central metal atom. Therefore, this configuration more reliably realizes a strong bond between the feedthrough capacitor unit and the resin. Effect of the Invention

[0018] One aspect of the present invention provides a high-voltage feedthrough capacitor having even higher reliability. [Brief description of the drawings]

[0019] [Figure 1] FIG. 1 is a cross-sectional view showing a high-voltage capacitor according to an embodiment. [Diagram 2] FIG. 2 is an exploded perspective view showing the high-voltage capacitor according to this embodiment. [Diagram 3] FIG. 3 is a diagram showing a bond structure provided by a silane coupling agent. [Figure 4] FIG. 4 shows the bond structure provided by a phosphonic acid derivative. [Diagram 5] FIG. 5 shows the binding structure provided by the chelate complex. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings. In the description, the same elements or elements having the same functions are designated by the same reference numerals, and duplicated descriptions are omitted.

[0021] The configuration of a high-voltage capacitor HC1 will be described with reference to Figures 1 and 2. The high-voltage capacitor HC1 includes a feedthrough capacitor unit 1. The feedthrough capacitor unit 1 includes a feedthrough capacitor 10, a terminal conductor 20, and a feedthrough conductor 30. The high-voltage capacitor HC1 is connected to, for example, a microwave oven magnetron to prevent unwanted radiation noise from the microwave oven magnetron. The feedthrough capacitor 10 functions as a filter to prevent unwanted radiation noise.

[0022] The feedthrough capacitor 10 includes an element body 11. The element body 11 includes first and second main surfaces 11a, 11b that face each other. In this embodiment, the first and second main surfaces 11a, 11b face each other in a first direction D1. The first and second main surfaces 11a, 11b define both end faces of the element body 11 in the first direction D1. The element body 11 includes a side wall surface 11c. The side wall surface 11c extends in the first direction D1 so as to connect the first and second main surfaces 11a, 11b to each other. The side wall surface 11c defines the outer periphery of the element body 11 when viewed from the first direction D1. The element body 11 is made of, for example, an insulating material. The element body 11 includes, for example, a ceramic. The ceramic included in the element body 11 is, for example, BaTiO 3、 BaZrO 3、 CaTiO 3、 or MgTiO 3 as a main component. The element body 11 may contain additives to be added to ceramic. The additives include, for example, Si, Mg, Zr, Zn, Y, V, Al, or Mn. In this specification, the direction from the second main surface 11b toward the first main surface 11a is the upward direction, and the first main surface 11a is located above the second main surface 11b.

[0023] The feedthrough capacitor 10 has a first electrode 12 and a second electrode 15. The first electrode 12 is formed on the first main surface 11a, and the second electrode 15 is formed on the second main surface 11b. The first electrode 12 includes, for example, a pair of conductors 13, 14. The conductors 13, 14 are spaced apart from each other on the first main surface 11a. In this embodiment, the conductors 13, 14 are spaced apart from each other in a second direction D2 intersecting the first direction D1. The conductors 13, 14 and the second electrode 15 face each other in the first direction D1.

[0024] A through hole 16 is formed in the element body 11. The through hole 16 opens to the first main surface 11a and the second main surface 11b. The surface 1a of the feedthrough capacitor unit 1 includes an inner wall surface 16a that defines the through hole 16 in the element body 11. The surface 1a is a surface that is exposed to the outside of the feedthrough capacitor unit 1 when the feedthrough capacitor unit 1 is in a single state. In this embodiment, the through hole 16 is composed of two through holes 17, 18, and the inner wall surface 16a includes an inner wall surface 17a that defines the through hole 17 and an inner wall surface 18a that defines the through hole 18. The through hole 17 opens to the first main surface 11a and the second main surface 11b. In this embodiment, the through hole 17 penetrates from the first main surface 11a to the second main surface 11b in the first direction D1. The through hole 17 also penetrates, for example, the conductor 13 and the second electrode 15. The through hole 18 opens to the first main surface 11a and the second main surface 11b. In this embodiment, the through hole 18 penetrates from the first main surface 11a to the second main surface 11b in the first direction D1. The through hole 18 also penetrates, for example, the conductor 14 and the second electrode 15. The through hole 17 does not have to penetrate between the conductor 13 and the second electrode 15, and the through hole 18 does not have to penetrate between the conductor 14 and the second electrode 15. The through holes 17 and 18 have, for example, a circular shape when viewed from the first direction D1.

[0025] The first and second electrodes 12, 15 are made of, for example, a conductive metal material. The conductive metal material constituting the first and second electrodes 12, 15 contains, for example, Ag. The first and second electrodes 12, 15 may contain, for example, a magnetic material in addition to the conductive metal material. The magnetic material is, for example, Fe, Co, Ni, Cu, or Sr, or a combination thereof. The first and second electrodes 12, 15 are formed, for example, by baking a conductive paste applied to the first and second main surfaces 11a, 11b of the element body 11. The conductive paste for forming the first and second electrodes 12, 15 contains, for example, the above-mentioned conductive metal material.

[0026] A groove 19 is formed in the element body 11. In this embodiment, the groove 19 is formed on the first main surface 11a side of the element body 11, between the conductors 13 and 14. No electrode is formed in the groove 19. The surface 1a of the feedthrough capacitor unit 1 includes a wall surface 19a that defines the groove 19 in the element body 11. The groove 19 extends, for example, in a third direction D3 that faces the first direction D1 and the second direction D2. The groove 19 reaches, for example, both ends of the first main surface 11a in the third direction D3. In this embodiment, the first direction D1, the second direction D2, and the third direction D3 are perpendicular to one another.

[0027] The terminal conductor 20 is electrically connected to the second electrode 15. The terminal conductor 20 supports, for example, the feedthrough capacitor 10 and has a protrusion 21 and a peripheral portion 22. The peripheral portion 22 surrounds the protrusion 21 when viewed from the first direction D1. The protrusion 21 protrudes from the peripheral portion 22 toward the feedthrough capacitor 10 when viewed from the second direction D2. The protrusion 21 has, for example, an opening 23 formed therein. The opening 23 penetrates the protrusion 21 in the first direction D1. The opening 23 is located, for example, in a central region of the protrusion 21 when viewed from the first direction D1.

[0028] The feedthrough capacitor 10 is arranged such that the second electrode 15 is electrically connected to the terminal conductor 20. In this embodiment, the feedthrough capacitor 10 is supported by the terminal conductor 20 such that the protrusion 21 contacts the second electrode 15. The terminal conductor 20 is, for example, grounded. The protrusion 21 and the second electrode 15 are connected via solder, for example. The terminal conductor 20 has a surface 20a, and the surface 1a of the feedthrough capacitor unit 1 includes the surface 20a.

[0029] The terminal conductor 20 has, for example, a rectangular shape when viewed from the first direction D1. In this specification, the term "rectangular shape" includes, for example, a shape in which each corner is chamfered and a shape in which each corner is rounded. The terminal conductor 20 is made of, for example, a conductive metal material. The conductive metal material constituting the terminal conductor 20 includes, for example, Fe, Cu, or a Cu-Zn alloy (brass).

[0030] The through conductor 30 is inserted into the through hole 16 and is electrically connected to the first electrode 12. In this embodiment, the feedthrough capacitor unit 1 has two through conductors 30 and two electrode connectors 31. The through conductor 30 includes a through portion 32, a tab portion 33, and a crimp 34. The through portion 32 is made of a conductor and has, for example, a cylindrical shape when viewed from the first direction D1. The tab portion 33 functions as a tab connector. The crimp 34 electrically and physically connects the through portion 32 and the tab portion 33.

[0031] One of the through conductors 30 is electrically connected to the conductor 13. In one of the through conductors 30, the through portion 32 is inserted into the electrode connector 31, the through hole 17, and the opening 23. One of the electrode connectors 31 is disposed between the tab portion 33 and the crimp 34, and the conductor 13. One of the electrode connectors 31 electrically connects the tab portion 33 and the crimp 34, and the conductor 13.

[0032] The other through conductor 30 is electrically connected to the conductor 14. In the other through conductor 30, the through portion 32 is inserted into the electrode connector 31, the through hole 18 and the opening 23. The other electrode connector 31 is disposed between the tab portion 33 and the crimp 34 and the conductor 14. The other electrode connector 31 electrically connects the tab portion 33 and the crimp 34 and the conductor 14.

[0033] The feedthrough capacitor unit 1 has a coating material 35. The coating material 35 coats the through conductors 30 and has electrical insulation properties. The coating material 35 has an outer side surface 35a, and the surface 1a of the feedthrough capacitor unit 1 includes the outer side surface 35a of the coating material 35. In this embodiment, the feedthrough capacitor unit 1 has two coating materials 35. One coating material 35 covers the side surface of one of the through conductors 30, and the other coating material 35 covers the side surface of the other through conductor 30. The coating material 35 contains insulating rubber. The insulating rubber constituting the coating material 35 contains, for example, silicone rubber.

[0034] In this embodiment, the region of one of the through conductors 30 covered with the coating material 35 is inserted into the through hole 17 and the opening 23. The region of the other through conductor 30 covered with the coating material 35 is inserted into the through hole 18 and the opening 23. The through conductor 30 functions, for example, as a power supply terminal to the feedthrough capacitor 10. When the high-voltage feedthrough capacitor HC1 is used, for example, in a magnetron, the terminal conductor 20 is grounded and a high voltage is applied to the through conductor 30. Noise passing through the through conductor 30 is absorbed by the filter action of the feedthrough capacitor 10. The through conductor 30 is made of, for example, a conductive metal material. The conductive metal material constituting the through conductor 30 includes, for example, Fe, Cu, or a Cu-Zn alloy (brass).

[0035] The high-voltage feedthrough capacitor HC1 includes housings 40 and 50. The housings 40 and 50 are, for example, hollow tubular and house the feedthrough capacitor unit 1. The housing 40 is disposed on the opposite side of the housing 50 in the first direction D1 across the terminal conductor 20. The housing 40 is disposed above the housing 50. When viewed from the second direction D2 and the third direction D3, the housing 40 surrounds, for example, the protrusion 21, the feedthrough capacitor 10, the electrode connector 31, the portion of the through portion 32 inserted into the through hole 16, the crimp 34, and the tab portion 33. The housing 40 is physically connected to the terminal conductor 20. The housing 40 is connected to the terminal conductor 20 so that, for example, a surface located at the lower end of the inner surface of the housing 40 contacts the outer surface of the protrusion 21. The lower end surface of the housing 40 contacts, for example, the upper surface of the peripheral portion 22.

[0036] The housing 50 is physically connected to the terminal conductor 20. When viewed from the second direction D2 and the third direction D3, the housing 50, for example, surrounds a portion of the through conductor 30 that is not inserted into the through hole 16. The housing 50 is connected to the terminal conductor 20 such that, for example, a surface located at an upper end of an outer surface of the housing 50 contacts an inner surface of the protrusion 21.

[0037] The housings 40, 50 are made of an insulating material. The housings 40, 50 may include the same material. The insulating material forming the housings 40, 50 includes, for example, polybutylene terephthalate (PBT), polyethylene terephthalate (PET), or modified melamine. The insulating material forming the housings 40, 50 may include an inorganic substance. The inorganic substance included in the housings 40, 50 includes, for example, glass powder and ceramic powder. The glass powder includes, for example, industrial glass powder. The ceramic powder includes, for example, SiO 2 Powder, Al 2 O 3 Powder, Talc (Mg 3 S 4 O 10 (OH) 2 ), aluminum nitride (AlN), or silicon nitride (Si 3 N 4), or a mixture thereof.

[0038] The high-voltage feedthrough capacitor HC1 includes a resin 2. The resin 2 is filled inside the housing 40 and covers the feedthrough capacitor unit 1. The resin 2 filled inside the housing 40 covers the surface 1a of the feedthrough capacitor unit 1. The resin 2 is disposed between the housing 40 and the feedthrough capacitor 10, the electrode connector 31, the tab portion 33, the crimp 34, and the protrusion 21. The resin 2 fills the gap between the housing 40 and the feedthrough capacitor 10, the electrode connector 31, the tab portion 33, the crimp 34, and the protrusion 21. The resin 2 also covers the groove 19. The upper edge of the resin 2 reaches a height at which the crimp 34 is filled, and the lower edge of the resin 2 reaches the protrusion 21. In this specification, of both ends of the resin 2 in the first direction D1, the edge located at the upper end is the upper edge, and the edge located at the lower end is the lower edge.

[0039] In this embodiment, the resin 2 is also filled inside the housing 50 and covers the feedthrough capacitor unit 1. The resin 2 filled inside the housing 50 covers the surface 1a of the feedthrough capacitor unit 1. The resin 2 is disposed between the housing 50 and the protruding portion 21, the inner wall surface 16a, and the covering material 35. The resin 2 fills the gaps between the housing 50 and the protruding portion 21, the inner wall surface 16a, and the covering material 35. The upper edge of the resin 2 reaches the lower surface of the electrode connector 31, and the lower edge of the resin 2 is located, for example, below the lower surface of the peripheral portion 22. Hatching of the resin 2 is omitted in FIG. 1.

[0040] The resin 2 is made of an insulating material. The insulating material constituting the resin 2 includes, for example, a thermosetting resin. The thermosetting resin constituting the resin 2 includes, for example, a urethane resin, an epoxy resin, a phenol resin, or a silicone resin. The resin 2 filled inside the housing 40 and the resin 2 filled inside the housing 50 may contain different materials. Therefore, for example, the resin 2 filled inside the housing 40 may include an epoxy resin, and the resin 2 filled inside the housing 50 may include a silicone resin. The resin 2 filled inside the housing 40 and the resin 2 filled inside the housing 50 may include an epoxy resin.

[0041] In this embodiment, a bonding structure 5 is provided that chemically bonds surface 1a of feedthrough capacitor unit 1 and surface 2a of resin 2. Bonding structure 5 is provided, for example, between surface 1a and surface 2a. Surface 1a is bonded to surface 2a via bonding structure 5. Surface 2a is the surface that is bonded to surface 1a via bonding structure 5.

[0042] The resin 2 covers the inner wall surface 16a, and the bonding structure 5 chemically bonds the inner wall surface 16a and the surface 2a. The resin 2 covers the outer surface 35a, and the bonding structure 5 chemically bonds the outer surface 35a and the surface 2a. The resin 2 covers the surface 20a, and the bonding structure 5 chemically bonds the surface 20a and the surface 2a. The resin 2 covers the wall surface 19a, and the bonding structure 5 chemically bonds the wall surface 19a and the surface 2a. The resin 2 covers the side wall surface 11c, and the bonding structure 5 chemically bonds the side wall surface 11c and the surface 2a. The surface 1a includes the side wall surface 11c in the element body 11. The resin 2 also covers the first and second electrodes 12, 15, and the bonding structure 5 chemically bonds the first and second electrodes 12, 15 and the surface 2a. Surface 1 a includes the surfaces of first and second electrodes 12 , 15 .

[0043] The bonding structure 5 will be described below with reference to Figs. 3 to 5. The bonding structure 5 is chemically bonded to the surface 1a and the surface 2a, respectively, so that the surface 1a and the surface 2a are chemically bonded by the bonding structure 5. The bonding structure 5 is provided by at least one of a silane coupling agent, a phosphonic acid derivative, and a chelate complex, for example. Each bond in Figs. 3 to 5 is an example of a chemical bond in the bonding structure 5.

[0044] As shown in Fig. 3, the bonded structure 5 formed by the silane coupling agent contains a silicon (Si) atom. Surface 1a and surface 2a are chemically bonded via the silicon atom derived from the silane coupling agent. The silane coupling agent has, for example, a chemical structure represented by the following general formula (1).

[0045] [ka] In the above general formula (1), the Y group is, for example, an amino group, an epoxy group, a methacryl group, a vinyl group, or a mercapto group. 1 The group can be, for example, CH 3 Group or C 2 H 5 OR 2 The group can be, for example, OCH 3 Group, O.C. 2 H 5 group, or OCOCH 3 In the above general formula (1), "n" is an integer of 0 to 2, and 2 The "O" in the group is an oxygen atom.

[0046] In the case of the bonded structure 5 using a silane coupling agent, after the silane coupling agent is introduced into the resin 2, for example, the silane coupling agent and the resin 2 are subjected to hydrolysis and heating, so that the bonded structure 5 is chemically bonded to the surface 1a. The silane coupling agent is introduced, for example, by being applied to the surface 1a or by being mixed into the resin 2. The OR of the silane coupling agent 2The OR group of the silane coupling agent reacts chemically with, for example, the hydroxyl group present on the surface 1a by hydrolysis and heating. 2 A silicon atom derived from the silane coupling agent forms a covalent bond with an oxygen atom of surface 1a by a chemical reaction between the group and the hydroxyl group of feedthrough capacitor unit 1. Bond structure 5 and surface 1a are chemically bonded via the silicon atom derived from the silane coupling agent.

[0047] The chemical bond between the bond structure 5 and the surface 2a is generated by at least one of a chemical reaction and an intermolecular interaction between the Y group of the silane coupling agent and the atomic group constituting the resin 2. The chemical reaction between the Y group and the atomic group constituting the resin 2 occurs, for example, when the Y group contains an atomic group that chemically reacts with the molecule constituting the resin 2. For example, when the Y group contains a bulky atomic group, an intermolecular interaction occurs between the Y group and the atomic group constituting the resin 2. When the Y group contains a bulky atomic group, the steric hindrance of the Y group increases the distance between the chemically reactive atomic group of the silane coupling agent and the chemically reactive atomic group of the resin 2. For this reason, the silane coupling agent is unlikely to chemically react with the resin 2, and the chemical bond between the bond structure 5 and the surface 2a is likely to be governed by the intermolecular interaction. In FIG. 3, "Q 1 " represents an atomic group (group) derived from the Y group, and "R" represents a part of a molecule constituting the surface 2a, for example, an atomic group derived from a reactive functional group. 1 The Q group and the R group are chemically bonded to each other, thereby forming a chemical bond between the bonding structure 5 and the surface 2a. 1The Y group is covalently bonded to a silicon atom, and as a result, the bond structure 5 and the surface 2a are chemically bonded via a silicon atom derived from the silane coupling agent. In this embodiment, the Y group can be changed according to the molecule constituting the resin 2. For example, when the resin 2 is an epoxy resin, a silane coupling agent is used in which the Y group has at least one of an amino group, an epoxy group, and a carbonyl group. In the chemical bond between the bond structure 5 and the surface 2a, the silicon atom derived from the silane coupling agent and the R group may be directly covalently bonded. In this case, the bond structure 5 and the surface 2a are also chemically bonded via a silicon atom derived from the silane coupling agent.

[0048] When forming the bonded structure 5 by the silane coupling agent, for example, the silane coupling agent may be applied to the surface 1a, the surface 1a may be covered with the resin 2, and then the silane coupling agent and the resin 2 may be subjected to chemical and heat treatment. For example, the silane coupling agent may be mixed into the resin 2, the surface 1a may be covered with the resin 2, and then the silane coupling agent and the resin 2 may be subjected to chemical and heat treatment.

[0049] As shown in Fig. 4, the bond structure 5 of the phosphonic acid derivative contains a phosphorus (P) atom. Surface 1a and surface 2a are chemically bonded via the phosphorus atom derived from the phosphonic acid derivative. The phosphonic acid derivative has, for example, a chemical structure represented by the following general formula (2).

[0050] [ka] In the above general formula (2), R 3 The group is, for example, an alkyl group containing a linear or cyclic carbon chain. 4 In the group, for example, at least one of OR 4 The OR group is a hydroxyl group. 4 The "O" in the group is an oxygen atom.

[0051] The bond structure 5 formed by the phosphonic acid derivative is formed, for example, by introducing the phosphonic acid derivative into the resin 2, followed by hydrolysis and heating of the resin 2. The phosphonic acid derivative is introduced, for example, by application to the surface 1a or by mixing into the resin 2. 4 The OR groups react, for example, with hydroxyl groups present on the surface 1a by hydrolysis and heating. The hydroxyl groups present on the surface 1a can also be generated by protons provided by, for example, phosphonic acid derivatives. 4 The phosphorus atom derived from the phosphonic acid derivative forms a covalent bond with an oxygen atom present on the surface 1a by a chemical reaction between the group and the hydroxyl group of the feedthrough capacitor unit 1. The bonding structure 5 and the surface 1a are chemically bonded via the phosphorus atom derived from the phosphonic acid derivative.

[0052] The chemical bond between the binding structure 5 and the surface 2a can be, for example, a phosphonic acid derivative R 3 The bonding structure 5 is chemically bonded to the surface 2a by at least one of a chemical reaction and an intermolecular interaction between the R group and an atomic group constituting the resin 2. 3 The chemical reaction between the group and the atomic group constituting the resin 2 can be, for example, R 3 This occurs when the R group contains an atomic group that chemically reacts with the atomic groups that make up the resin 2. For example, 3 If the group contains bulky atomic groups, R 3 An intermolecular interaction occurs between the R group and the atomic group constituting the resin 2. 3 If the group contains bulky atomic groups, R 3 The steric hindrance of the group increases the distance between the chemically reactive atomic group of the phosphonic acid derivative and the chemically reactive atomic group of the resin 2. Therefore, the phosphonic acid derivative is unlikely to chemically react with the resin 2, and the chemical bond between the bond structure 5 and the surface 2a is likely to be governed by the above-mentioned intermolecular interaction. 2 " is R 3 Q represents an atomic group derived from a group, and "R" represents an atomic group derived from a part of a molecule constituting the surface 2a, for example, a reactive functional group. 2The Q group and the R group are chemically bonded to each other, thereby forming a chemical bond between the bonding structure 5 and the surface 2a. 2 The R group is covalently bonded to the phosphorus atom, and as a result, the bonded structure 5 and the surface 2a are chemically bonded via the phosphorus atom derived from the phosphonic acid derivative. In the chemical bond between the bonded structure 5 and the surface 2a, the phosphorus atom derived from the phosphonic acid derivative and the R group may be directly covalently bonded. In this case, the bonded structure 5 and the surface 2a are also chemically bonded via the phosphorus atom derived from the phosphonic acid derivative.

[0053] In forming the bond structure 5 by the phosphonic acid derivative, for example, the phosphonic acid derivative may be applied to the surface 1a, the surface 1a may be covered with the resin 2, and then the phosphonic acid derivative and the resin 2 may be subjected to chemical and heat treatment. For example, the phosphonic acid derivative may be mixed into the resin 2, the surface may be covered with the resin 2, and then the phosphonic acid derivative and the resin 2 may be subjected to chemical and heat treatment.

[0054] As shown in Fig. 5, the bond structure 5 of a chelate complex includes a central metal atom. Surfaces 1a and 2a are chemically bonded via the central metal atom derived from the chelate complex. The chelate complex has, for example, a chemical structure represented by the following general formula (3). In the chelate complex, a ligand is coordinately bonded to the central metal atom. In the following general formula (3) and Fig. 5, the bond represented by a dashed line indicates a coordinate bond.

[0055] [ka] In the above general formula (3), R 5 The group can be, for example, C(CH 3 )CHC(OC 2 H 5 ) group. OR 6 The group is, for example, OC 3 H 7 is a group, OR 6"O" in the group is an oxygen atom. In the above general formula (3), the central metal atom is, for example, Al. The central metal atom may be a metal atom other than Al, for example, Co, Fe, or Ti.

[0056] In the case of the bond structure 5 using a chelate complex, for example, the bond structure 5 is chemically bonded to the surface 1a by introducing the chelate complex into the resin 2, and then subjecting the resin 2 to hydrolysis and heating. The chelate complex is introduced, for example, by being applied to the surface 1a or by being mixed into the resin 2. The OR of the chelate complex 6 The OR groups react chemically with, for example, hydroxyl groups present on the surface 1a by hydrolysis and heating. 6 The central metal atom derived from the chelate complex forms a covalent bond with an oxygen atom present on surface 1a through a chemical reaction between the group and the hydroxyl group of feedthrough capacitor unit 1. Bond structure 5 and surface 1a are chemically bonded via the central metal atom derived from the chelate complex.

[0057] The chemical bond between the binding structure 5 and the surface 2a can be, for example, R 5 This is caused by at least one of a chemical reaction and an intermolecular interaction between the R group and an atomic group constituting the resin 2. 5 The chemical reaction between the group and the atomic group constituting the resin 2 can be, for example, R 5 This occurs when the R group contains an atomic group that chemically reacts with the atomic groups that make up the resin 2. For example, 5 If the group contains bulky atomic groups, R 5 An intermolecular interaction occurs between the R group and the atomic group constituting the resin 2. 5 If the group contains bulky atomic groups, R 5 The steric hindrance of the group increases the distance between the chemically reactive atomic group of the chelate complex and the chemically reactive atomic group of the resin 2. Therefore, the chelate complex is unlikely to chemically react with the resin 2, and the chemical bond between the bond structure 5 and the surface 2a is likely to be governed by the above-mentioned intermolecular interaction. 3 " is R 5Q represents an atomic group derived from a group, and "R" represents an atomic group derived from a part of a molecule constituting the surface 2a, for example, a reactive functional group. 3 The Q group and the R group are chemically bonded to each other, thereby forming a chemical bond between the bonding structure 5 and the surface 2a. 3 The R group is covalently bonded to the central metal atom, and as a result, the bonded structure 5 and the surface 2a are chemically bonded via the central metal atom derived from the chelate complex. In the chemical bond between the bonded structure 5 and the surface 2a, the central metal atom derived from the chelate complex and the R group may be directly covalently bonded. In this case as well, the bonded structure 5 and the surface 2a are chemically bonded via the central metal atom derived from the chelate complex.

[0058] In forming the bond structure 5 using a chelate complex, for example, a chelate complex may be applied to the surface 1a, the surface 1a may be covered with the resin 2, and then the chelate complex and the resin 2 may be subjected to chemical and heat treatment. For example, a chelate complex may be mixed into the resin 2, the surface 1a may be covered with the resin 2, and then the chelate complex and the resin 2 may be subjected to chemical and heat treatment.

[0059] As described above, the high-voltage feedthrough capacitor HC1 includes an element body 11 including first and second principal surfaces 11a, 11b opposing each other and in which a through hole 16 opening into the first and second principal surfaces 11a, 11b is formed, a feedthrough capacitor unit 1 having first and second electrodes 12, 15 formed on the first and second principal surfaces 11a, 11b, respectively, a feedthrough conductor 30 inserted into the through hole 16 and electrically connected to the first electrode 12, and a terminal conductor 20 electrically connected to the second electrode 15, and a resin 2 covering the feedthrough capacitor unit 1. A bonding structure 5 is provided that chemically bonds a surface 1a of the feedthrough capacitor unit 1 to a surface 2a of the resin 2.

[0060] In the high-voltage feedthrough capacitor HC1, in a configuration in which the feedthrough capacitor unit 1 is covered with the resin 2, a bonding structure 5 is provided that chemically bonds the surface 1a and the surface 2a. The chemical bond in the bonding structure 5 is stronger than the bond between the surface of the feedthrough capacitor unit and the surface of the resin, for example, due to an anchor effect caused by the roughness of the surface of the feedthrough capacitor unit. Therefore, the high-voltage feedthrough capacitor HC1 reliably achieves a strong bond between the feedthrough capacitor unit 1 and the resin 2. The high-voltage feedthrough capacitor HC1 has even higher reliability.

[0061] In this embodiment, the surface 1a of the feedthrough capacitor unit 1 includes an inner wall surface 16a that defines the through hole 16 in the element body 11. The bonding structure 5 chemically bonds the inner wall surface 16a that defines the through hole 16 to the surface 2a of the resin 2. In this case, the bond between the inner wall surface 16a and the surface 2a is strong. Therefore, the high-voltage feedthrough capacitor HC1 reliably achieves a strong bond between the inner wall surface 16a and the resin 2.

[0062] In this embodiment, the feedthrough capacitor unit 1 has a covering material 35 that covers the feedthrough conductors 30 and has electrical insulation properties, and the surface 1a of the feedthrough capacitor unit 1 includes an outer surface 35a of the covering material 35. The bonding structure 5 chemically bonds the outer surface 35a of the covering material 35 and the surface 2a of the resin 2. In this case, the bond between the outer surface 35a and the surface 2a is strong. Therefore, the high-voltage feedthrough capacitor HC1 reliably achieves a strong bond between the outer surface 35a and the resin 2.

[0063] In this embodiment, the surface 1a of the feedthrough capacitor unit 1 includes the surface 20a of the terminal conductor 20. The bonding structure 5 chemically bonds the surface 20a of the terminal conductor 20 to the surface 2a of the resin 2. In this case, the bond between the surface 20a and the surface 2a is strong. Therefore, the high-voltage feedthrough capacitor HC1 reliably achieves a strong bond between the surface 20a and the resin 2.

[0064] In this embodiment, the first electrode 12 includes a pair of conductors 13, 14 spaced apart from each other on the first main surface 11a, the element body 11 has a groove 19 formed between the pair of conductors 13, 14, and the surface 1a of the feedthrough capacitor unit 1 includes a wall surface 19a that defines the groove 19 in the element body 11. The bonding structure 5 chemically bonds the wall surface 19a that defines the groove 19 to the surface 2a of the resin 2. In this case, the bond between the wall surface 19a and the surface 2a is strong. Therefore, the high-voltage feedthrough capacitor HC1 reliably achieves a strong bond between the wall surface 19a and the resin 2.

[0065] In this embodiment, in the bonded structure 5, the surface 1a of the feedthrough capacitor unit 1 and the surface 2a of the resin 2 are chemically bonded via silicon atoms derived from a silane coupling agent. In this case, the bond between the surface 1a and the surface 2a is formed, for example, by a covalent bond via the silicon atoms. Therefore, the high-voltage feedthrough capacitor HC1 more reliably achieves a strong bond between the feedthrough capacitor unit 1 and the resin 2.

[0066] In this embodiment, the silane coupling agent is introduced by being applied to the surface 1a of the feedthrough capacitor unit 1 or by being mixed into the resin 2. In this case, the chemical bond between the surface 1a and the surface 2a is more reliably formed by the silicon atoms. Therefore, the high-voltage feedthrough capacitor HC1 realizes a strong bond between the feedthrough capacitor unit 1 and the resin 2 more reliably.

[0067] In this embodiment, in the bonding structure 5, the surface 1a of the feedthrough capacitor unit 1 and the surface 2a of the resin 2 are chemically bonded via a phosphorus atom derived from a phosphonic acid derivative. In this case, the bonding between the surface 1a and the surface 2a is performed by, for example, a covalent bond via the phosphorus atom. Therefore, the high-voltage feedthrough capacitor HC1 more reliably realizes a strong bond between the feedthrough capacitor unit 1 and the resin 2.

[0068] In this embodiment, the phosphonic acid derivative is introduced by being applied to surface 1a of feedthrough capacitor unit 1 or by being mixed into resin 2. In this case, the chemical bond between surface 1a and surface 2a is more reliably formed by the phosphorus atom. Therefore, in the high-voltage feedthrough capacitor HC1, a strong bond between feedthrough capacitor unit 1 and resin 2 is more reliably realized.

[0069] In this embodiment, in the bonding structure 5, the surface 1a of the feedthrough capacitor unit 1 and the surface 2a of the resin 2 are chemically bonded via a central metal atom derived from a chelate complex. In this case, the bond between the surface 1a and the surface 2a is formed, for example, by a covalent bond via the central metal atom. Therefore, the high-voltage feedthrough capacitor HC1 more reliably achieves a strong bond between the feedthrough capacitor unit 1 and the resin 2.

[0070] In this embodiment, the chelate complex is introduced by being applied to surface 1a of feedthrough capacitor unit 1 or by being mixed into resin 2. In this case, the chemical bond between surface 1a and surface 2a is more reliably formed by the central metal atom. Therefore, in the high-voltage feedthrough capacitor HC1, a strong bond between feedthrough capacitor unit 1 and resin 2 is more reliably realized.

[0071] Although the embodiment of the present invention has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications are possible without departing from the gist of the present invention.

[0072] In the high-voltage capacitor HC1, the bonding structure 5 does not necessarily chemically bond the inner wall surface 16a to the surface 2a. In a configuration in which the bonding structure 5 chemically bonds the inner wall surface 16a to the surface 2a, the bonding between the inner wall surface 16a and the surface 2a is strong, as described above. Therefore, this configuration reliably realizes a strong bond between the inner wall surface 16a and the resin 2. In the high-voltage capacitor HC1, the bonding structure 5 does not necessarily chemically bond the outer surface 35a to the surface 2a. In a configuration in which the bonding structure 5 chemically bonds the outer surface 35a to the surface 2a, the bonding between the outer surface 35a and the surface 2a is strong, as described above. Therefore, this configuration reliably realizes a strong bond between the outer surface 35a and the resin 2. In the high-voltage capacitor HC1, the bonding structure 5 does not necessarily chemically bond the surface 20a to the surface 2a. In a configuration in which the bonding structure 5 chemically bonds the surface 20a to the surface 2a, the bonding between the surface 20a and the surface 2a is strong, as described above. Therefore, this configuration reliably realizes a strong bond between the surface 20a and the resin 2. In the high-voltage capacitor HC1, the bonding structure 5 does not necessarily chemically bond the wall surface 19a to the surface 2a. In a configuration in which the bonding structure 5 chemically bonds the wall surface 19a to the surface 2a, the bond between the wall surface 19a and the surface 2a is strong, as described above. Therefore, this configuration reliably realizes a strong bond between the wall surface 19a and the resin 2. [Explanation of symbols]

[0073] DESCRIPTION OF THE PREFERRED EMBODIMENTS 1...feed-through capacitor unit, 1a...surface, 2...resin, 2a...surface, 5...bonding structure, 11...element body, 11a...first main surface, 11b...second main surface, 12...first electrode, 13...conductor, 14...conductor, 15...second electrode, 16...feed-through hole, 16a...inner wall surface, 19...groove, 19a...wall surface, 20...terminal conductor, 20a...surface, 30...feed-through conductor, 35...coating material, 35a...outer surface, HC1...high-voltage feed-through capacitor.

Claims

1. a feedthrough capacitor unit including: an element body including first and second main surfaces opposed to each other and having a through hole opening into the first and second main surfaces; first and second electrodes formed on the first and second main surfaces, respectively; a through conductor inserted into the through hole and electrically connected to the first electrode; a coating material coating the through conductor and having electrical insulation; and a terminal conductor electrically connected to the second electrode; a resin covering the feedthrough capacitor unit; the first electrode includes a pair of conductors spaced apart from each other on the first major surface; a groove is formed in the element body between the pair of conductors, a bonding structure is provided that chemically bonds a surface of the feedthrough capacitor unit and a surface of the resin, the surface of the feedthrough capacitor unit includes an outer surface of the coating material, a surface of the terminal conductor, and, in the element body, an inner wall surface that defines the through hole and a wall surface that defines the groove; a bonding structure that chemically bonds the outer surface of the coating material to the surface of the resin, chemically bonds the surface of the terminal conductor to the surface of the resin, chemically bonds the inner wall surface that defines the through hole to the surface of the resin, and chemically bonds the wall surface that defines the groove to the surface of the resin.

2. 2. The high-voltage feedthrough capacitor according to claim 1, wherein in the bonded structure, the surface of the feedthrough capacitor unit and the surface of the resin are chemically bonded via silicon atoms derived from a silane coupling agent.

3. The high-voltage feedthrough capacitor according to claim 2 , wherein the silane coupling agent is introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin.

4. 2. The high-voltage feedthrough capacitor according to claim 1, wherein in the bonding structure, the surface of the feedthrough capacitor unit and the surface of the resin are chemically bonded via a phosphorus atom derived from a phosphonic acid derivative.

5. The high-voltage feedthrough capacitor according to claim 4 , wherein the phosphonic acid derivative is introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin.

6. 2. The high-voltage feedthrough capacitor according to claim 1, wherein in the bonded structure, the surface of the feedthrough capacitor unit and the surface of the resin are chemically bonded via a central metal atom derived from a chelate complex.

7. The high-voltage feedthrough capacitor according to claim 6 , wherein the chelate complex is introduced by being applied to the surface of the feedthrough capacitor unit or by being mixed into the resin.

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