Semiconductor manufacturing apparatus and method for manufacturing semiconductor device
The semiconductor manufacturing device addresses the issue of grinding debris adherence by using a chuck table with suction and blow areas and a conveying arm with an adjustment mechanism and nozzle, ensuring cleanliness and improving yield.
Patent Information
- Application Number
- JP2021185579
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-11-15
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2041-11-15
AI Technical Summary
During the grinding process of semiconductor wafers, grinding debris accumulates in the gap between the chuck table and the wafer, and when fluid is ejected to remove the wafer, this debris is ejected and can adhere to the wafer, causing issues in subsequent processes.
The semiconductor manufacturing device includes a chuck table with a suction area to hold the wafer and a blow area to eject fluid, and a conveying arm with an adjustment mechanism to widen the gap between the wafer and the arm, along with a nozzle to eject water towards the grinding surface, preventing debris from adhering to the wafer.
This solution effectively prevents grinding debris from adhering to the semiconductor wafer after grinding, improving the yield of semiconductor devices by ensuring cleanliness and preventing contamination in subsequent processing steps.
Smart Images

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Abstract
Description
[Technical field]
[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. [Background technology]
[0002] In recent years, as electronic devices have become smaller and thinner, there has been a demand for semiconductor devices mounted on the electronic devices to be smaller and thinner as well. In order to thin the semiconductor wafers included in the semiconductor devices, a grinding process is performed. In the grinding process, the semiconductor wafer is placed on a chuck table with the grinding surface of the semiconductor wafer facing upward, and the grinding surface of the semiconductor wafer is ground by a rotating grinding wheel.
[0003] When fluid is sprayed from the chuck table to remove the semiconductor wafer after grinding, there is a problem in that grinding debris accumulated in the gap between the chuck table and the semiconductor wafer is sprayed out together with the fluid and adheres to the semiconductor wafer.
[0004] For example, Patent Document 1 discloses a method of using a chuck table having an area where fluid is ejected and an area where fluid is not ejected. By using this chuck table, grinding debris is prevented from adhering to the semiconductor wafer. [Prior art documents] [Patent documents]
[0005] [Patent Document 1] JP 2020-93330 A Summary of the Invention [Problem to be solved by the invention]
[0006] After grinding, the semiconductor wafer is transported by clamping the outer periphery of the semiconductor wafer with a transport arm. In the conventional technology, the gap between the transport arm and the semiconductor wafer is narrow, and the fluid containing the grinding debris is likely to accumulate in the gap due to surface tension. Therefore, when the suction of the semiconductor wafer on the chuck table is released, the fluid containing the grinding debris flows around to the grinding surface of the semiconductor wafer. There is a problem that the fluid dries out during the transport of the semiconductor wafer, and the grinding debris contained in the fluid adheres to the grinding surface of the semiconductor wafer, affecting subsequent processes.
[0007] Therefore, an object of the present disclosure is to provide a technique capable of suppressing adhesion of grinding debris to a semiconductor wafer after grinding. [Means for solving the problem]
[0008] A semiconductor manufacturing apparatus according to the present disclosure includes a chuck table on which a semiconductor wafer is placed with its grinding surface facing upward, a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer, and an adjustment mechanism that adjusts a gap between the semiconductor wafer and the transfer arm. a nozzle for spraying water from an outer periphery side of the semiconductor wafer toward the grinding surface of the semiconductor wafer; the chuck table includes a suction area that suctions and holds a surface of the semiconductor wafer opposite to the grinding surface, and a blow area that releases the suction applied to the semiconductor wafer by spraying a fluid toward the surface of the semiconductor wafer opposite to the grinding surface. a vacuum area for discharging the water ejected from the nozzle; It has the following. Effect of the Invention
[0009] According to the present disclosure, the fluid containing the grinding debris is sucked in the suction area of the chuck table, so that when the suction on the semiconductor wafer is released, the fluid containing the grinding debris can be prevented from flowing around to the grinding surface of the semiconductor wafer. Furthermore, when the semiconductor wafer is transported by the transport arm after grinding, the gap between the semiconductor wafer and the transport arm is adjusted to be wider by the adjustment mechanism, so that the fluid containing the grinding debris can be further prevented from flowing around to the grinding surface of the semiconductor wafer. This makes it possible to prevent the grinding debris from adhering to the semiconductor wafer after grinding. [Brief description of the drawings]
[0010] [Figure 1] 1 is a schematic cross-sectional view showing a state in which a transfer arm provided in the semiconductor manufacturing apparatus according to the first embodiment clamps a semiconductor wafer. [Diagram 2] 2 is a top view of a chuck table included in the semiconductor manufacturing apparatus according to the first embodiment. FIG. [Diagram 3] 11 is a schematic cross-sectional view showing a state in which water is being ejected from a nozzle included in the semiconductor manufacturing apparatus according to the first modification of the first embodiment. FIG. [Figure 4] 11 is a schematic cross-sectional view showing a state in which water is being ejected from a nozzle included in a semiconductor manufacturing apparatus according to a second modification of the first embodiment. FIG. [Diagram 5] 3A to 3C are schematic cross-sectional views showing the operation of a transfer arm provided in the semiconductor manufacturing apparatus according to the first embodiment. [Figure 6] 5 is a schematic cross-sectional view showing the operation of a transfer arm when an adjustment mechanism included in the semiconductor manufacturing apparatus according to the first embodiment includes a motor. FIG. [Figure 7] 5 is a schematic cross-sectional view showing the operation of a transfer arm when an adjustment mechanism included in the semiconductor manufacturing apparatus according to the first embodiment includes an air cylinder. FIG. [Figure 8] 2 is a flowchart showing each step of a manufacturing method of a semiconductor device. [Figure 9] 5A to 5C are schematic cross-sectional views showing the implementation of a protective film cleaning process from completion of a grinding process. [Figure 10] 11A to 11C are schematic cross-sectional views showing the implementation of a final wafer cleaning step to a protective film drying step. [Figure 11] 11 is a schematic cross-sectional view showing a state in which a transfer arm provided in a semiconductor manufacturing apparatus according to a second embodiment clamps a semiconductor wafer. FIG. [Figure 12] 11 is a schematic cross-sectional view showing a state in which water is being sprayed from a spray unit provided on a transfer arm included in a semiconductor manufacturing apparatus according to a third embodiment. FIG. [Figure 13] 13 is a schematic cross-sectional view showing a state in which air is being ejected from an air ejection part provided on a transfer arm included in a semiconductor manufacturing apparatus according to a fourth embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0011] <Embodiment 1> The first embodiment will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a state in which a transfer arm 1 included in a semiconductor manufacturing apparatus according to the first embodiment clamps a semiconductor wafer 5. FIG. 2 is a top view of a chuck table 2 included in the semiconductor manufacturing apparatus according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing a state in which water 8 is being sprayed from a nozzle 7 included in a semiconductor manufacturing apparatus according to a first modification of the first embodiment. FIG. 4 is a schematic cross-sectional view showing a state in which water 8 is being sprayed from a nozzle 7 included in a semiconductor manufacturing apparatus according to a second modification of the first embodiment.
[0012] As shown in FIG. 1, the semiconductor manufacturing apparatus includes a chuck table 2, a pair of transfer arms 1, an adjustment mechanism 30 (see FIG. 6), and a pair of nozzles 7.
[0013] 1 and 2, a semiconductor wafer 5 having a front surface and a back surface is placed on the chuck table 2. The chuck table 2 is made of an inorganic material that has been fired to make it porous, and is formed in a circular shape in top view to correspond to the shape of the semiconductor wafer 5.
[0014] As shown in FIG. 1, a pair of transfer arms 1 are provided at positions facing each other. Each transfer arm 1 has a main body 1a incorporating an adjustment mechanism 30, and a clamp 1b provided on the outer periphery of the lower surface of the main body 1a. The outer periphery 5a of the semiconductor wafer 5 is clamped by the clamp 1b. The pair of transfer arms 1 are clamp-type arms that can adjust the gap between the main body 1a and the semiconductor wafer 5 clamped by the clamp 1b using the adjustment mechanism 30. The adjustment mechanism 30 will be described in detail later, and may include a motor 20 (see FIG. 6) or an air cylinder 25 (see FIG. 7).
[0015] The semiconductor wafer 5 is mainly made of, for example, silicon (Si) or silicon carbide (SiC). The semiconductor wafer 5 is placed on the chuck table 2 with the grinding surface facing upward. By grinding the grinding surface of the semiconductor wafer 5, the semiconductor wafer 5 becomes a ribbed semiconductor wafer having ribs at the outer periphery 5a that are thicker than those at the center. Here, the grinding surface of the semiconductor wafer 5 is a region on the back surface of the semiconductor wafer 5 excluding the outer periphery 5a. In other words, the grinding surface of the semiconductor wafer 5 is a region on the inner periphery side of the outer periphery 5a on the back surface of the semiconductor wafer 5.
[0016] 1 and 2, the chuck table 2 has a concave frame 2a, a suction area 3 which is annular in a top view, and a blow area 4 which is annular in a top view. The suction area 3 and the blow area 4 are provided in a recess 2b which is circular in a top view and formed in a portion of the frame 2a excluding the outer periphery. The suction area 3 is an area which sucks and holds the surface of the semiconductor wafer 5 opposite to the surface to be ground. The blow area 4 is an area which releases the suction applied to the semiconductor wafer 5 by spraying a fluid toward the surface of the semiconductor wafer 5 opposite to the surface to be ground.
[0017] The suction area 3 is connected to a suction source (not shown) via a pipe 3a (see FIG. 11). The blow area 4 is connected to a blow source (not shown) via a pipe 4a (see FIG. 11). Here, the surface of the semiconductor wafer 5 opposite to the grinding surface is the front surface of the semiconductor wafer 5. The fluid is, for example, a mixture of water and air.
[0018] Conventionally, flapping of the semiconductor wafer 5 during grinding has not been taken into consideration. If a blow area 4 is provided at a location on the chuck table 2 facing the outer periphery 5a of the semiconductor wafer 5, it is conceivable that the semiconductor wafer 5 may flap during grinding. For this reason, a suction area 3 is provided at that location, and further, the blow area 4 and the suction area 3 are alternately arranged on the inner periphery side of that location, thereby making it possible to suppress flapping of the semiconductor wafer 5 during grinding. Here, the location on the chuck table 2 facing the outer periphery 5a of the semiconductor wafer 5 is the outer periphery of the recess 2b.
[0019] For example, in Fig. 1 and Fig. 2, the suction area 3 and the blow area 4 are alternately arranged in a concentric manner, and the central and outer periphery of the recess 2b are the suction area 3. The reason why the central part of the recess 2b, as well as the outer periphery, is made the suction area 3 is that when grinding the semiconductor wafer 5, the grinding wheel tends to hit the central part aggressively, and if the semiconductor wafer 5 flutters during grinding, this leads to abnormal appearance and cracks in the semiconductor wafer 5. By providing the suction area 3 in the central part of the recess 2b, fluttering of the semiconductor wafer 5 can be suppressed. Here, the abnormal appearance of the semiconductor wafer 5 is, for example, deep grinding marks and scratches.
[0020] The suction area 3 and the blow area 4 are separated by an annular partition plate 6 made of metal, ceramic, or the like. By separately providing an area where only the suction operation is performed and an area where only the blow operation is performed, it is possible to prevent grinding debris from being ejected from the blow area 4. This allows the transport arm 1 to clamp the outer periphery 5a of the semiconductor wafer 5 while preventing adhesion of grinding debris to the semiconductor wafer 5 when the suction of the semiconductor wafer 5 is released.
[0021] In the semiconductor manufacturing apparatus according to the first embodiment, the outer periphery of the recess 2b is configured as the suction area 3 and not as the blow area 4, which makes it possible to prevent grinding debris from adhering to the outer periphery 5b of the semiconductor wafer 5, compared to a case in which the blow area 4 is provided on the outer periphery of the recess 2b. The transport arm 1 clamps the outer periphery 5b of the semiconductor wafer 5 while transporting it, but since grinding debris is less likely to adhere to the outer periphery 5b of the semiconductor wafer 5, it is also possible to prevent foreign matter and dirt from adhering to the transport arm 1.
[0022] 1, a pair of nozzles 7 are provided at positions facing each other on the frame 2a of the chuck table 2, and spray water 8 from the outer periphery side of the semiconductor wafer 5. When the semiconductor wafer 5 is removed from the chuck table 2, the water 8 is sprayed from the pair of nozzles 7 between the semiconductor wafer 5 and the chuck table 2, thereby preventing the fluid containing grinding debris sprayed from the chuck table 2 from flowing around onto the grinding surface of the semiconductor wafer 5.
[0023] It is also acceptable to use only one nozzle 7. Moreover, instead of spraying water 8 from the outer periphery of semiconductor wafer 5, nozzle 7 may spray water 8 toward the center of the ground surface of semiconductor wafer 5 as shown in Fig. 3, or may be provided on transfer arm 1 and spray water 8 toward the ground surface of semiconductor wafer 5 as shown in Fig. 4.
[0024] Next, a description will be given of the operation of the adjustment mechanism 30 that adjusts the gap between the semiconductor wafer 5 and the transfer arm 1. Fig. 5(a) is a schematic cross-sectional view showing the operation of the transfer arm 1 when clamping and removing the semiconductor wafer 5, and Fig. 5(b) is a schematic cross-sectional view showing the operation of the transfer arm 1 when transferring the semiconductor wafer 5.
[0025] When clamping and removing the semiconductor wafer 5, the main body 1a of the transfer arm 1 moves downward, narrowing the gap between the semiconductor wafer 5 and the transfer arm 1 to d1, as shown in Fig. 5(a). When transferring the semiconductor wafer 5, the main body 1a of the transfer arm 1 moves upward, widening the gap between the semiconductor wafer 5 and the transfer arm 1 from d1 to d2, as shown in Fig. 5(b). The gap between the semiconductor wafer 5 and the transfer arm 1 is the gap between the ground surface of the semiconductor wafer 5 and the part of the main body 1a that is closer to the inner periphery than the clamping part 1b.
[0026] Next, the structure of the adjustment mechanism 30 will be described. Fig. 6 is a schematic cross-sectional view showing the operation of the transfer arm 1 when the adjustment mechanism 30 includes a motor 20. Fig. 7 is a schematic cross-sectional view showing the operation of the transfer arm 1 when the adjustment mechanism 30 includes an air cylinder 25.
[0027] An adjustment mechanism 30 is provided for each transport arm 1, and may include a motor 20 or an air cylinder 25. First, a case where the adjustment mechanism 30 includes a motor 20 will be described. As shown in FIG. 6, the adjustment mechanism 30 includes a motor 20 and a ball screw 21. The ball screw 21 is erected on the outer periphery side of the semiconductor wafer 5. The motor 20 is provided on a main body 1a of the transport arm 1, and is connected to the ball screw 21. The main body 1a can move up and down along the ball screw 21 by being driven by the motor 20.
[0028] Next, a case where the adjustment mechanism 30 includes an air cylinder 25 will be described. As shown in Fig. 7, the adjustment mechanism 30 includes an air cylinder 25 and a piston 26. The piston 26 is erected on the outer periphery side of the semiconductor wafer 5. The air cylinder 25 is provided on the main body 1a of the transfer arm 1, and is connected to the piston 26. The main body 1a can move up and down along the piston 26 by being driven by the air cylinder 25.
[0029] Next, a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to the first embodiment will be described. FIG. 8 is a flow chart showing each step of the method for manufacturing a semiconductor device. FIG. 9 is a schematic cross-sectional view showing implementation from the completion of the grinding step to the protective film cleaning step. FIG. 10 is a schematic cross-sectional view showing implementation from the final wafer cleaning step to the protective film drying step. Note that in FIG. 9, the suction area 3 and the blow area 4 are omitted to make the drawing easier to see.
[0030] As shown in FIG. 8, first, in the wafer preparation process, a semiconductor wafer 5 is prepared on the surface of which an element region (not shown) is formed and on which a protective film (not shown) for protecting the element region is further provided (step S1).
[0031] Next, in the grinding process, the grinding surface of the semiconductor wafer 5 is ground, and the semiconductor wafer 5 is thinned to a predetermined thickness (step S2). Here, the semiconductor wafer 5 is placed on the chuck table 2, and the grinding process is performed in a state where the surface of the semiconductor wafer 5 opposite to the grinding surface is sucked by the suction area 3.
[0032] In the wafer cleaning step, water 8 is sprayed from a nozzle 7 to clean the semiconductor wafer 5 to which grinding debris has adhered in the grinding step (step S3).
[0033] 9, the semiconductor manufacturing equipment is provided with an underwater area 31 in which water is stored. In the transfer process, the semiconductor wafer 5 is transferred to the underwater area 31 by the transfer arm 1 (step S4). Specifically, the chuck table 2 is rotated by a driving means (not shown) while the transfer arm 1 is clamping the semiconductor wafer 5 so that the semiconductor wafer 5 is placed in the underwater area 31.
[0034] In the protective film cleaning step, the protective film provided on the surface of the semiconductor wafer 5 is cleaned (step S5). The protective film cleaning step is performed in water by a protective film cleaning brush 17 arranged on the surface side of the semiconductor wafer 5. It is noted that the protective film cleaning step may be omitted.
[0035] In the transfer step, the semiconductor wafer 5 is transferred by the transfer arm 1 from the underwater area 31 to the spinner table 18 (see FIG. 10) where the final wafer cleaning step is performed (step S6). Specifically, the transfer arm 1 transfers the semiconductor wafer 5 from the water to the atmosphere, and places the semiconductor wafer 5 on the spinner table 18.
[0036] 10, in the final wafer cleaning step, water 8a and air 8b are sprayed from nozzles 19a, 19b arranged above the semiconductor wafer 5 toward the ground surface of the semiconductor wafer 5, thereby cleaning the semiconductor wafer 5 (step S7). The final wafer cleaning step and the subsequent protective film drying step (not shown) are performed in the atmosphere. In the protective film drying step, the protective film of the semiconductor wafer 5 is dried with air 15 when the semiconductor wafer 5 is transported after the final wafer cleaning is completed.
[0037] Next, the effects obtained from the semiconductor manufacturing apparatus according to the first embodiment will be described while comparing it with a conventional semiconductor manufacturing apparatus.
[0038] In conventional semiconductor manufacturing equipment, when the semiconductor wafer 5 is transported by the transport arm 1, the gap between the semiconductor wafer 5 and the transport arm 1 cannot be adjusted, so the semiconductor wafer 5 is transported with a narrow gap between them. Water containing grinding debris is likely to accumulate in this gap due to surface tension, so when the suction of the semiconductor wafer 5 on the chuck table 2 is released, the fluid containing the grinding debris flows around to the grinding surface of the semiconductor wafer 5. There was a problem that the fluid dries out during the transport of the semiconductor wafer 5, and the grinding debris contained in the fluid adheres to the grinding surface of the semiconductor wafer 5, affecting subsequent processes.
[0039] In contrast, the semiconductor manufacturing apparatus of embodiment 1 includes a chuck table 2 on which the semiconductor wafer 5 is placed with its ground surface facing upward, a transport arm 1 which transports the semiconductor wafer 5 by clamping the outer periphery 5a of the semiconductor wafer 5, and an adjustment mechanism 30 which adjusts the gap between the semiconductor wafer 5 and the transport arm 1. The chuck table 2 includes a suction area 3 which suctions and holds the surface of the semiconductor wafer 5 opposite the ground surface, and a blow area 4 which sprays fluid toward the surface of the semiconductor wafer 5 opposite the ground surface to release the suction on the semiconductor wafer 5.
[0040] Therefore, since the fluid containing the grinding debris is sucked in the suction area 3 of the chuck table 2, when the suction to the semiconductor wafer 5 is released, the fluid containing the grinding debris can be prevented from flowing around to the grinding surface of the semiconductor wafer 5. Furthermore, when the semiconductor wafer 5 is transported by the transport arm 1 after grinding, the gap between the semiconductor wafer 5 and the transport arm 1 is adjusted to be wider by the adjustment mechanism 30, thereby further preventing the fluid containing the grinding debris from flowing around to the grinding surface of the semiconductor wafer 5. This prevents the grinding debris from adhering to the semiconductor wafer 5 after grinding. As a result, it is possible to improve the yield of semiconductor devices manufactured by the semiconductor manufacturing apparatus.
[0041] Furthermore, since the suction area 3 is provided at a location on the chuck table 2 facing the outer periphery 5a of the semiconductor wafer 5, fluttering of the semiconductor wafer 5 during grinding can be suppressed.
[0042] The semiconductor manufacturing apparatus further includes a nozzle 7 that sprays water 8 from the outer periphery of the semiconductor wafer 5 toward the grinding surface of the semiconductor wafer 5. Therefore, when the fluid is sprayed from the blow area 4, the water 8 sprayed from the nozzle 7 flows over the grinding surface of the semiconductor wafer 5, thereby preventing the fluid containing grinding debris from getting around to the grinding surface of the semiconductor wafer 5.
[0043] Furthermore, the nozzle 7 sprays the water 8 toward the center of the ground surface of the semiconductor wafer 5. Therefore, when the transfer arm 1 clamps the semiconductor wafer 5 after grinding, the nozzle 7 sprays the water 8 toward the center of the ground surface of the semiconductor wafer 5 immediately before the fluid is sprayed from the blow area 4 to release the suction on the semiconductor wafer 5, thereby preventing the fluid containing the grinding debris from getting around to the ground surface of the semiconductor wafer 5.
[0044] Furthermore, since the nozzle 7 is attached to the transfer arm 1, the transfer arm 1 can transfer the semiconductor wafer 5 while supplying water 8 to the grinding surface of the semiconductor wafer 5. This lengthens the time that the grinding surface of the semiconductor wafer 5 is immersed in the water 8, thereby making it possible to suppress the adhesion of foreign matter and dirt during transfer.
[0045] In addition, the manufacturing method of the semiconductor device according to the first embodiment includes a step (a) of preparing a semiconductor wafer 5 having a protective film for protecting an element region formed on the surface opposite to the surface to be ground, a step (b) of placing the semiconductor wafer 5 on the chuck table 2 and grinding the surface to be ground to form ribs at the outer periphery 5a of the semiconductor wafer 5 that are thicker than the central portion, a step (c) of placing the semiconductor wafer 5 in water and cleaning the protective film in the water, and a step (d) of transporting the semiconductor wafer 5 from the water to the atmosphere by the transport arm 1 and drying the protective film while the semiconductor wafer 5 is being transported.
[0046] Therefore, in addition to being able to prevent grinding debris from adhering to the semiconductor wafer 5 after grinding, it is also possible to prevent foreign matter and dirt from adhering when the semiconductor wafer 5 is clamped by the transport arm 1, and to prevent the ground surface of the semiconductor wafer 5 from drying out.
[0047] <Embodiment 2> Next, a semiconductor manufacturing apparatus according to a second embodiment will be described. Fig. 11 is a schematic cross-sectional view showing a state in which a transport arm 1 included in the semiconductor manufacturing apparatus according to the second embodiment is clamping a semiconductor wafer 5. Although the nozzle 7 is not shown in Fig. 11, the description will be given assuming that the nozzle 7 is present. Note that in the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0048] 11, in the second embodiment, the chuck table 2 further has a vacuum area 10 that discharges the water 8 sprayed from the nozzle 7. The vacuum area 10 is provided in an annular shape between the suction area 3 and the blow area 4. The vacuum area 10 is connected to a vacuum source (not shown) via a pipe 10a.
[0049] As described above, in the semiconductor manufacturing apparatus according to the second embodiment, the chuck table 2 further includes the vacuum area 10 for discharging the water 8 ejected from the nozzle 7, so that when the transport arm 1 removes the semiconductor wafer 5 from the chuck table 2, the water 8 containing the grinding debris remaining on the chuck table 2 can be discharged by the vacuum area 10. This makes it possible to prevent foreign matter and dirt from getting onto the ground surface of the semiconductor wafer 5.
[0050] <Embodiment 3> Next, a semiconductor manufacturing apparatus according to embodiment 3 will be described. Fig. 12 is a schematic cross-sectional view showing a state in which water 8 is being sprayed from a spray unit 13 provided on a transport arm 1 included in the semiconductor manufacturing apparatus according to embodiment 3. Note that in embodiment 3, the same components as those described in embodiments 1 and 2 are denoted by the same reference numerals and will not be described.
[0051] 12, in the third embodiment, a plurality of jetting units 13 are provided to jet water 8 toward the inner circumferential surface of the main body 1a of the transport arm 1. The plurality of jetting units 13 are provided on the inner circumferential surface of the main body 1a and are connected to a water supply source (not shown) via a pipe (not shown) that passes through the inside of the main body 1a. The water 8 jetted from the plurality of jetting units 13 falls along the inner circumferential surface of the main body 1a.
[0052] Although not shown, the ejection unit 13 may be configured by a nozzle that ejects the water 8 toward the inner circumferential surface of the main body 1a, rather than being provided on the inner circumferential surface of the main body 1a. The nozzle may be provided on the main body 1a or on the chuck table 2.
[0053] Also, in the semiconductor manufacturing apparatus according to the third embodiment, it is possible to employ the nozzle 7 of the first embodiment and the vacuum area 10 of the second embodiment.
[0054] As described above, the semiconductor manufacturing apparatus according to the third embodiment is provided with the spray unit 13 that sprays water 8 toward the inner circumferential surface of the transfer arm 1. Therefore, by spraying water 8 toward the inner circumferential surface of the transfer arm 1 after transfer is completed or during standby, foreign matter and dirt adhering to the transfer arm 1 can be removed. Also, adhesion of foreign matter and dirt to the transfer arm 1 can be suppressed.
[0055] <Fourth embodiment> Next, a semiconductor manufacturing apparatus according to embodiment 4 will be described. Fig. 13 is a schematic cross-sectional view showing a state in which air 16 is being ejected from an air ejection unit 14 provided on a transport arm 1 included in the semiconductor manufacturing apparatus according to embodiment 4. Note that in embodiment 4, the same components as those described in embodiments 1 to 3 are given the same reference numerals and the description thereof will be omitted.
[0056] 13, in the fourth embodiment, the transfer arm 1 is provided with a plurality of air ejection units 14 that eject air 16 from the outer circumferential surface of the main body 1a of the transfer arm 1 toward the outside of the main body 1a. The plurality of air ejection units 14 are provided on the outer circumferential surface of the main body 1a, and are connected to an air source (not shown) via a pipe (not shown) that passes through the inside of the main body 1a.
[0057] In the protective film drying step, when the transport arm 1 transports the semiconductor wafer 5, air 15 for drying the protective film of the semiconductor wafer 5 is blown toward the surface of the semiconductor wafer 5. By blowing air 16 from the air blowing part 14 toward the outside of the main body part 1a, it is possible to prevent the air 15 from passing around the outside of the main body part 1a and reaching the grinding surface of the semiconductor wafer 5.
[0058] In the semiconductor manufacturing apparatus according to the fourth embodiment, it is also possible to employ the nozzle 7 of the first embodiment, the vacuum area 10 of the second embodiment, and the jetting portion 13 of the third embodiment.
[0059] As described above, in the semiconductor manufacturing apparatus according to the fourth embodiment, the transport arm 1 is provided with the air ejection unit 14 that ejects air 16 from the outer circumferential surface of the transport arm 1. Therefore, by ejecting air 16 from the air ejection unit 14 toward the outside of the main body unit 1a, it is possible to prevent the air 15 from passing through the outside of the main body unit 1a and flowing around to the ground surface of the semiconductor wafer 5 when the air 15 is ejected to dry the protective film of the semiconductor wafer 5 in the protective film drying step. This makes it possible to prevent the occurrence of drying unevenness on the ground surface of the semiconductor wafer 5.
[0060] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate. [Explanation of symbols]
[0061] 1 transport arm, 2 chuck table, 3 suction area, 4 blow area, 5 semiconductor wafer, 7 nozzle, 10 vacuum area, 13 blowing section, 14 air blowing section, 30 adjustment mechanism.
Claims
1. a chuck table on which the semiconductor wafer is placed with the grinding surface of the semiconductor wafer facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm; a nozzle for spraying water from an outer periphery side of the semiconductor wafer toward the grinding surface of the semiconductor wafer, the chuck table has a suction area that sucks and holds the surface of the semiconductor wafer opposite the grinding surface, a blow area that sprays fluid toward the surface of the semiconductor wafer opposite the grinding surface to release the suction on the semiconductor wafer, and a vacuum area that discharges the water sprayed from the nozzle.
2. a chuck table on which the semiconductor wafer is placed with the grinding surface of the semiconductor wafer facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm; a nozzle for spraying water toward a center portion of the grinding surface of the semiconductor wafer, the chuck table has a suction area that sucks and holds the surface of the semiconductor wafer opposite the grinding surface, a blow area that sprays fluid toward the surface of the semiconductor wafer opposite the grinding surface to release the suction on the semiconductor wafer, and a vacuum area that discharges the water sprayed from the nozzle.
3. a chuck table on which the semiconductor wafer is placed with the grinding surface of the semiconductor wafer facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm; a nozzle for spraying water from an outer periphery side of the semiconductor wafer toward the grinding surface of the semiconductor wafer, the chuck table has a suction area that suctions and holds a surface of the semiconductor wafer opposite to the grinding surface, and a blow area that releases the suction applied to the semiconductor wafer by spraying a fluid toward the surface of the semiconductor wafer opposite to the grinding surface, The nozzle is attached to the transfer arm of the semiconductor manufacturing device.
4. a chuck table on which the semiconductor wafer is placed with the grinding surface of the semiconductor wafer facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm; a nozzle for spraying water toward a center portion of the grinding surface of the semiconductor wafer, the chuck table has a suction area that suctions and holds a surface of the semiconductor wafer opposite to the grinding surface, and a blow area that releases the suction applied to the semiconductor wafer by spraying a fluid toward the surface of the semiconductor wafer opposite to the grinding surface, The nozzle is attached to the transfer arm of the semiconductor manufacturing device.
5. a chuck table on which the semiconductor wafer is placed with the grinding surface of the semiconductor wafer facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm, the chuck table has a suction area that suctions and holds a surface of the semiconductor wafer opposite to the grinding surface, and a blow area that releases the suction applied to the semiconductor wafer by spraying a fluid toward the surface of the semiconductor wafer opposite to the grinding surface, The semiconductor manufacturing apparatus is provided with a spraying unit that sprays water toward an inner peripheral surface of the transfer arm.
6. a chuck table on which the semiconductor wafer is placed with the grinding surface of the semiconductor wafer facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm, the chuck table has a suction area that suctions and holds a surface of the semiconductor wafer opposite to the grinding surface, and a blow area that releases the suction applied to the semiconductor wafer by spraying a fluid toward the surface of the semiconductor wafer opposite to the grinding surface, The semiconductor manufacturing apparatus, wherein the transport arm is provided with an air blowing unit that blows air from an outer circumferential surface of the transport arm.
7. 7. The semiconductor manufacturing apparatus according to claim 1, wherein the suction area is provided at a location on the chuck table facing an outer periphery of the semiconductor wafer.
8. A method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to any one of claims 1 to 7, comprising the steps of: (a) preparing the semiconductor wafer having a protective film provided on a surface opposite to the grinding surface to protect an element region; (b) placing the semiconductor wafer on the chuck table and grinding the grinding surface to form a rib on the outer periphery of the semiconductor wafer that is thicker than a central portion of the semiconductor wafer; (c) placing the semiconductor wafer in water and cleaning the protective film in the water; (d) transporting the semiconductor wafer from the water to the atmosphere by the transport arm, and drying the protective film during the transport of the semiconductor wafer; The manufacturing method of a semiconductor device comprising the steps of:
9. A chuck table on which a semiconductor wafer is placed with its grinding surface facing upward; a transfer arm that clamps an outer periphery of the semiconductor wafer and transfers the semiconductor wafer; an adjustment mechanism for adjusting a gap between the semiconductor wafer and the transfer arm, a manufacturing method of a semiconductor device using a semiconductor manufacturing apparatus, the method comprising: the chuck table having a suction area that suctions and holds a surface of the semiconductor wafer opposite to the grinding surface, and a blow area that releases suction on the semiconductor wafer by spraying a fluid toward the surface of the semiconductor wafer opposite to the grinding surface, (a) preparing the semiconductor wafer having a protective film provided on a surface opposite to the grinding surface to protect an element region; (b) placing the semiconductor wafer on the chuck table and grinding the grinding surface to form a rib on the outer periphery of the semiconductor wafer that is thicker than a central portion of the semiconductor wafer; (c) placing the semiconductor wafer in water and cleaning the protective film in the water; (d) transporting the semiconductor wafer from the water to the atmosphere by the transport arm, and drying the protective film during the transport of the semiconductor wafer; The manufacturing method of a semiconductor device comprising the steps of:
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